WO2022121365A1 - 动态d触发器、寄存器、芯片和数据处理装置 - Google Patents
动态d触发器、寄存器、芯片和数据处理装置 Download PDFInfo
- Publication number
- WO2022121365A1 WO2022121365A1 PCT/CN2021/113230 CN2021113230W WO2022121365A1 WO 2022121365 A1 WO2022121365 A1 WO 2022121365A1 CN 2021113230 W CN2021113230 W CN 2021113230W WO 2022121365 A1 WO2022121365 A1 WO 2022121365A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- latch unit
- gate
- flip
- clock signal
- dynamic
- Prior art date
Links
- 239000000872 buffer Substances 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 16
- 238000005065 mining Methods 0.000 description 13
- 230000000630 rising effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000009471 action Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
- H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
- H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
- H03K3/356034—Bistable circuits using additional transistors in the input circuit the input circuit having a differential configuration
- H03K3/356043—Bistable circuits using additional transistors in the input circuit the input circuit having a differential configuration with synchronous operation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3562—Bistable circuits of the master-slave type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
Definitions
- the present disclosure generally relates to a dynamic D flip-flop, register, chip and data processing apparatus.
- Bitcoin is a virtual encrypted digital currency in the form of P2P (Peer-to-Peer). Bitcoin transactions use a distributed database composed of many nodes in the entire P2P network to confirm and record all transaction behaviors, and use cryptographic design to ensure security.
- P2P Peer-to-Peer
- the core of using miners to mine Bitcoin is to get rewards based on the computing power of miners to calculate SHA-256.
- chip size, chip operating speed and chip power consumption are three crucial factors that determine the performance of the mining machine. Among them, the chip size determines the chip cost, and the operating speed of the chip determines the operating speed of the mining machine.
- the power consumption of the chip determines the degree of power consumption, that is, the mining cost. In practical applications, a very important performance indicator to measure the mining machine is the power consumed per unit of computing power, that is, the ratio of power consumption to computing power.
- the mining process requires a lot of repetitive logic calculations, which requires a lot of D flip-flops. Improper selection of the D flip-flop will lead to an increase in the chip area, a slower operation speed, and an increase in power consumption, which will eventually lead to a worsening of the power consumption and computing power ratio of the mining machine.
- the D flip-flop itself is widely used and can be used as digital signal register, shift register, frequency division and waveform generator.
- the D flip-flop has two inputs, data (D) and clock (CLK), and one output (Q), which can write data to or read data from the D flip-flop.
- a dynamic D flip-flop comprising: an input terminal for receiving input data; an output terminal for providing output data in response to the input data; and a clock signal terminal for receiving a clock signal; a first latch unit for latching input data from an input terminal and transmitting the input data under the control of the clock signal; and a second latch unit for latching data from the first latch unit And transmit the data latched by the first latch unit under the control of the clock signal; wherein, the first latch unit and the second latch unit are sequentially connected in series between the input end and the output end; and wherein, the output end is configured To output the data from the second latch unit as output data.
- a register comprising: a plurality of input terminals for receiving input data; a plurality of output terminals for outputting data; a clock signal terminal for receiving an external clock signal; a clock buffer a controller for providing a control clock signal to a plurality of dynamic D flip-flops based on the external clock signal, the control clock signal includes a first clock signal and a second clock signal, the first clock signal and the second clock The signal is inverted, and a plurality of dynamic D flip-flops are connected in parallel between the plurality of input terminals and the plurality of output terminals for latching and/or reading out data under the control of the control clock signal, wherein
- the dynamic D flip-flop is a dynamic D flip-flop as described above.
- a chip including the dynamic D flip-flop as described above or the register as described above.
- a data processing apparatus for executing a digital currency encryption algorithm comprising the above-mentioned chip.
- FIG. 1 illustrates a dynamic D flip-flop according to some embodiments of the present disclosure
- FIG. 2 illustrates a clock buffer for dynamic D flip-flops in accordance with some embodiments of the present disclosure
- FIG. 3 illustrates a clocked dynamic D flip-flop in accordance with some embodiments of the present disclosure
- 4A and 4B respectively show schematic circuit diagrams of dynamic D flip-flops according to some embodiments of the present disclosure
- Fig. 5 shows the circuit timing diagram according to the dynamic D flip-flop shown in Fig. 4A and Fig. 4B;
- FIGS. 6A and 6B respectively show schematic circuit diagrams of dynamic D flip-flops according to variants of some embodiments of the present disclosure
- Fig. 7 shows the circuit timing diagram according to the dynamic D flip-flop shown in Fig. 6A and Fig. 6B;
- FIGS. 8A-8D shows a circuit timing diagram according to the dynamic D flip-flop shown in FIGS. 8A-8D;
- Figure 10 shows a register comprising a plurality of dynamic D flip-flops connected in parallel.
- the computing equipment used to mine virtual currency needs to perform a large number of repetitive logical calculations during the mining process, which requires a large number of D flip-flops for data storage, so the performance of the D flip-flops directly affects the performance of the computing chip, including the chip area , power consumption, operation speed, etc.
- the traditional D flip-flop includes a large number of PMOS transistors and NMOS transistors, which occupies a large area on the chip and brings a correspondingly large power consumption. Therefore, there is a need for a simplified D flip-flop that includes fewer transistors to reduce chip area and power consumption.
- the present disclosure provides a simplified dynamic D flip-flop for a computing device and a register including a plurality of parallel connected dynamic D flip-flops, thereby effectively reducing area and power consumption.
- the dynamic D flip-flop reduces the positive feedback circuit for maintaining the working state, so the circuit structure will be greatly simplified. This not only reduces the chip area, but also reduces power consumption.
- a traditional dynamic D flip-flop usually includes an input drive unit, a two-level latch unit and an output drive unit.
- the applicant proposed a new type of dynamic D flip-flop, which omits the input driving unit to reduce chip area and power consumption.
- the present disclosure proposes a more simplified dynamic D flip-flop for an application environment with a small driving load, which only includes a two-level latch unit and does not include an output driving unit. Since the output driving unit is omitted, the chip area can be further effectively reduced and the power consumption can be reduced, which is very important for the virtual currency computing device using a large number of dynamic D flip-flops.
- FIG. 1 illustrates a dynamic D flip-flop in accordance with some embodiments of the present disclosure.
- the dynamic D flip-flop 100 includes: an input terminal 101 for receiving input data; an output terminal 102 for providing output data in response to the input data; a clock signal terminal 103 for receiving a clock signal; a first latch unit 104 , for latching the input data from the input terminal 101 and transmitting the input data under the control of the clock signal; the second latch unit 105 for latching the data from the first latch unit 104 and under the control of the clock signal
- the data latched by the first latch unit 104 is transmitted, wherein the first latch unit 104 and the second latch unit 105 are sequentially connected in series between the input end 101 and the output end 102, and wherein the output end 102 is configured as The data from the second latch unit 105 is output as output data.
- FIG. 2 shows a clock buffer used to provide a clock signal for a dynamic D flip-flop.
- the clock buffer 200 is composed of two stages of inverters 201 and 202 connected in series.
- the inverters 201 and 202 respectively generate a clock signal CLKN for controlling the dynamic D flip-flop and a clock signal CLKP which is inverted to the clock signal CLKN.
- the clock buffer 200 buffers the input clock signal CK, and supplies the dynamic D flip-flop with the clock signal CLKN and the clock signal CLKP.
- clock buffer 200 may include more inverters.
- FIG. 3 shows a dynamic D flip-flop 300 with clock control.
- the clock signal CK is buffered by the clock buffer 301 to provide the clock signals CLKN and CLKP to the dynamic D flip-flop 300 .
- FIG. 4A shows a schematic circuit diagram of a dynamic D flip-flop according to some embodiments of the present disclosure.
- the dynamic D flip-flop 400 may include a first latch unit 405 and a second latch unit 404 .
- the first latch unit 405 can receive input data; at the node 402 as the output of the first latch unit 405, the first latch unit 405 The data latched by the latch unit 405 is transmitted to the second latch unit 404; at the node 403, which is an output terminal of the second latch unit 404, the second latch unit 404 may provide output data.
- the first latch unit 405 may be a transmission gate.
- the first latch unit 405 may include a third PMOS transistor 410 and a third NMOS transistor 411 , wherein the third PMOS transistor 410 and the third NMOS transistor 411 may be connected in parallel at the input of the dynamic D flip-flop 400 terminal and the output terminal of the first latch unit 405 .
- the source of the third PMOS transistor 410 and the source of the third NMOS transistor 411 may be connected together to form the input terminal of the first latch unit 405; the drain of the third PMOS transistor 410 and the The drains of the three NMOS transistors 411 may be connected together to form the output of the first latch unit 405 .
- the gate of the third PMOS transistor 410 may be controlled by the clock signal CLKP, and the gate of the third NMOS transistor 411 may be controlled by the clock signal CLKN.
- the source and drain of the transistors of the pass gate can be interchanged because the pass gate can be symmetrical. That is, the drain of the third PMOS transistor 410 and the drain of the third NMOS transistor 411 may be connected together to form the input terminal of the first latch unit 405; the source of the third PMOS transistor 410 and the third NMOS transistor 411 The sources of can be connected together to form the output of the first latch unit 405 .
- the source and drain of the transistor of the pass gate are not interchangeable.
- the second latch unit 404 may be a tri-state gate.
- the second latch unit 404 may include a first PMOS transistor 406 , a second PMOS transistor 407 , a first NMOS transistor 408 and a second NMOS transistor 409 , wherein the first PMOS transistor 406 and the second PMOS transistor 407 , the first NMOS transistor 408 and the second NMOS transistor 409 are sequentially connected in series between the power supply VDD and the ground GND.
- the source of the first PMOS transistor 406 may be connected to the power supply VDD
- the source of the second PMOS transistor 407 may be connected to the drain of the first PMOS transistor 406, and the drain of the first NMOS transistor 408 may be connected
- the drain of the second NMOS transistor 409 may be connected to the source of the first NMOS transistor 408, and the source of the second NMOS transistor 409 may be connected to ground GND, wherein the second PMOS transistor
- the drain of 407 and the drain of the first NMOS transistor 408 may be connected together to form the output of the second latch unit 404 .
- the gate of the first PMOS transistor 406 and the gate of the second NMOS transistor 409 may be connected together to form the input of the second latch unit 404 .
- the input terminal is connected to the output terminal of the first latch unit 405 so that the gate of the first PMOS transistor 406 and the gate of the second NMOS transistor 409 can be controlled by the output of the first latch unit 405 .
- the gate of the second PMOS transistor 407 may be controlled by the clock signal CLKN
- the gate of the first NMOS transistor 408 may be controlled by the clock signal CLKP.
- the second latch unit 404 is in a high-impedance state, and the data output by the first latch unit 405 at the node 402 cannot pass through the second latch unit 404 . Since the data at the node 402 cannot pass through the second latching unit 404, the data at the node 402 can be latched at the node 402 to keep the original state and play the role of data registration.
- the dynamic D flip-flop 400 omits the output driving unit, and the output terminal of the dynamic D flip-flop 400 is configured to output the data from the second latch unit 404 as output data. Due to the inversion action of the second latch unit 404 , the output data at the node 403 of the dynamic D flip-flop 400 is inverted with the input data at the node 401 .
- the dynamic D flip-flop shown in FIG. 4A omits the transistor of the output driving unit, only needs 6 transistors, and greatly reduces the chip area. Power consumption is also reduced due to one less inverter output stage. This advantageous technical effect is also applicable to the dynamic D flip-flops shown in FIGS. 4B and 6A-6B later.
- the dynamic D flip-flop as shown in FIG. 4A omits the output driving unit, and the load is driven by the tri-state gate, it is especially suitable for the case where a large driving load is not required.
- FIG. 4B shows a schematic circuit diagram of a dynamic D flip-flop according to some embodiments of the present disclosure.
- the first latch unit 405 may be a transmission gate.
- the first latch unit 405 may include a third PMOS transistor 410 and a third NMOS transistor 411 , wherein the third PMOS transistor 410 and the third NMOS transistor 411 may be connected in parallel to the input of the dynamic D flip-flop 400 terminal and the output terminal of the first latch unit 405 .
- the source of the third PMOS transistor 410 and the source of the third NMOS transistor 411 may be connected together to form the input terminal of the first latch unit 405; the drain of the third PMOS transistor 410 and the first latch unit 405; The drains of the three NMOS transistors 411 may be connected together to form the output of the first latch unit 405 .
- the gate of the third PMOS transistor 410 may be controlled by the clock signal CLKP, and the gate of the third NMOS transistor 411 may be controlled by the clock signal CLKN.
- the source and drain of the transistors of the pass gate can be interchanged because the pass gate can be symmetrical. That is, the drain of the third PMOS transistor 410 and the drain of the third NMOS transistor 411 may be connected together to form the input terminal of the first latch unit 405; the source of the third PMOS transistor 410 and the drain of the third NMOS transistor 411 The sources may be connected together to form the output of the first latch unit 405 .
- the source and drain of the transistor of the pass gate are not interchangeable.
- the second latch unit 404 may be a tri-state gate.
- the second latch unit 404 may include a first PMOS transistor 406 , a second PMOS transistor 407 , a first NMOS transistor 408 and a second NMOS transistor 409 , wherein the first PMOS transistor 406 and the second PMOS transistor 407 , the first NMOS transistor 408 and the second NMOS transistor 409 are sequentially connected in series between the power supply VDD and the ground GND.
- the source of the first PMOS transistor 406 may be connected to the power supply VDD
- the source of the second PMOS transistor 407 may be connected to the drain of the first PMOS transistor 406, and the drain of the first NMOS transistor 408 may be connected
- the drain of the second NMOS transistor 409 may be connected to the source of the first NMOS transistor 408, and the source of the second NMOS transistor 409 may be connected to ground GND, wherein the second PMOS transistor
- the drain of 407 and the drain of the first NMOS transistor 408 may be connected together to form the output of the second latch unit 404 .
- the gate of the second PMOS transistor 407 and the gate of the first NMOS transistor 408 may be connected together to form the input terminal of the second latch unit 404 .
- the input terminal is connected to the output terminal of the first latch unit 405 so that the gate of the second PMOS transistor 407 and the gate of the first NMOS transistor 408 can be controlled by the output of the first latch unit 405 .
- the gate of the first PMOS transistor 406 may be controlled by the clock signal CLKN
- the gate of the second NMOS transistor 409 may be controlled by the clock signal CLKP.
- the second latch unit 404 is in a high-impedance state, and the data output by the first latch unit 405 at the node 402 cannot pass through the second latch unit 404 . Since the data at the node 402 cannot pass through the second latch unit 404, the data at the node 402 can be latched at the node 402 to keep the original state and play the role of data registration.
- the dynamic D flip-flop 400 omits the output driving unit, and the output terminal of the dynamic D flip-flop 400 is configured to output the data from the second latch unit 404 as output data. Due to the inversion action of the second latch unit 404 , the output data of the dynamic D flip-flop 400 at the node 403 is inverted with the input data at the node 401 .
- the dynamic D flip-flop shown in FIG. 4B is a variant of the dynamic D flip-flop shown in FIG. 4A , and the difference lies in the different positions of the clock-controlled transistors in the second latch unit 404 .
- FIG. 5 shows a circuit timing diagram of a dynamic D flip-flop that is active on a rising edge according to FIGS. 4A and 4B .
- the following is a detailed description according to the working principle of the dynamic D flip-flop with reference to FIG. 5 .
- a dynamic D flip-flop that is active on the falling edge can be implemented by swapping the clock control signals of the dynamic D flip-flop.
- the gate of the third PMOS transistor 410 of the first latch unit 405 is changed to be controlled by CLKN
- the gate of the third NMOS transistor 411 of the first latch unit 405 is changed to be controlled by Controlled by CLKP
- the gate of the second PMOS transistor 407 of the second latch unit 404 is changed to be controlled by CLKP
- the gate of the first NMOS transistor 408 of the second latch unit 404 is changed to be controlled by CLKN.
- the circuit of the body is shown in Figure 6A. For the circuit shown in FIG.
- FIGS. 8A-8D illustrate circuit schematic diagrams of dynamic D flip-flops according to other embodiments of the present disclosure. Different from the dynamic D flip-flop including the first latch unit 405 as a transmission gate and the second latch unit 404 as a tri-state gate as shown in FIGS. 4A-4B and 6A-6B, as shown in FIGS. 8A-
- the first latch unit 412 and the second latch unit 404 of the dynamic D flip-flop in the circuit shown in FIG. 8D may both be tri-state gates.
- the dynamic D flip-flop 400 may include a first latch unit 412 and a second latch unit 404.
- the first latch unit 412 may receive input data; at the node 402 as the output of the first latch unit 412, the first latch unit 412 The data latched by the latch unit 412 is transmitted to the second latch unit 404; at the node 403, which is an output terminal of the second latch unit 404, the second latch unit 404 may provide output data.
- the first latch unit 412 may be a tri-state gate.
- the first latch unit 412 may include a fourth PMOS transistor 413 , a fifth PMOS transistor 414 , a fourth NMOS transistor 415 and a fifth NMOS transistor 416 , wherein the fourth PMOS transistor 413 and the fifth PMOS transistor 414 , the fourth NMOS transistor 415 and the fifth NMOS transistor 416 are sequentially connected in series between the power supply VDD and the ground GND.
- the source of the fourth PMOS transistor 413 may be connected to the power supply VDD
- the source of the fifth PMOS transistor 414 may be connected to the drain of the fourth PMOS transistor 413
- the drain of the fourth NMOS transistor 415 may be Connected to the drain of the fifth PMOS transistor 414
- the drain of the fifth NMOS transistor 416 may be connected to the source of the fourth NMOS transistor 415
- the source of the fifth NMOS transistor 416 may be connected to ground GND
- the fifth PMOS The drain of the transistor 414 and the drain of the fourth NMOS transistor 415 may be connected together to form an output terminal of the first latch unit 412 .
- the gate of the fourth PMOS transistor 413 and the gate of the fifth NMOS transistor 416 may be connected together to form an input terminal of the first latch unit 412 to receive input data from the input terminal, so that the gate of the fourth PMOS transistor 413 and the gate of the fifth NMOS transistor 416 may be controlled by input data.
- the gate of the fifth PMOS transistor 414 may be controlled by the clock signal CLKP
- the gate of the fourth NMOS transistor 415 may be controlled by the clock signal CLKN.
- the second latch unit 404 may also be a tri-state gate. As shown in FIG. 8A , the second latch unit 404 may include a first PMOS transistor 406 , a second PMOS transistor 407 , a first NMOS transistor 408 and a second NMOS transistor 409 , wherein the first PMOS transistor 406 and the second PMOS transistor 407 , the first NMOS transistor 408 and the second NMOS transistor 409 are sequentially connected in series between the power supply VDD and the ground GND.
- the source of the first PMOS transistor 406 may be connected to the power supply VDD
- the source of the second PMOS transistor 407 may be connected to the drain of the first PMOS transistor 406, and the drain of the first NMOS transistor 408 may be connected
- the drain of the second NMOS transistor 409 may be connected to the source of the first NMOS transistor 408, and the source of the second NMOS transistor 409 may be connected to ground GND, wherein the second PMOS transistor
- the drain of 407 and the drain of the first NMOS transistor 408 may be connected together to form the output of the second latch unit 404 .
- the gate of the first PMOS transistor 406 and the gate of the second NMOS transistor 409 may be connected together to form the input of the second latch unit 404 .
- the input terminal is connected to the output terminal of the first latch unit 412 so that the gate of the first PMOS transistor 406 and the gate of the second NMOS transistor 409 can be controlled by the output of the first latch unit 412 .
- the gate of the second PMOS transistor 407 may be controlled by the clock signal CLKN
- the gate of the first NMOS transistor 408 may be controlled by the clock signal CLKP.
- the second latch unit 404 is in a high-impedance state, and the data output by the first latch unit 412 at the node 402 cannot pass through the second latch unit 404 . Since the data at the node 402 cannot pass through the second latching unit 404, the data at the node 402 can be latched at the node 402 to keep the original state and play the role of data registration.
- the dynamic D flip-flop 400 omits the output driving unit, and the output terminal of the dynamic D flip-flop 400 is configured to output the data from the second latch unit 404 as output data. Due to the inversion of the first latch unit 412 and the second latch unit 404 , the output data of the dynamic D flip-flop 400 at node 403 is in phase with the input data at node 401 .
- the dynamic D flip-flop of FIG. 8A omits the transistor of the output driving unit, and only needs 8 transistors. Although there are more transistors than the dynamic D flip-flops shown in FIGS. 4A-4B and 6A-6B, the chip area can still be greatly reduced. Power consumption is also reduced due to one less inverter output stage. This advantageous technical effect is also applicable to the dynamic D flip-flops shown in FIGS. 8B-8D later.
- FIG. 8B shows a schematic circuit diagram of a dynamic D flip-flop that is a variant of the dynamic D flip-flop shown in FIG. 8A.
- the first latch unit 412 of the dynamic D flip-flop shown in FIG. 8B is the same as the first latch unit 412 of the dynamic D flip-flop shown in FIG. 8A , and will not be described in detail here.
- the second latch unit 404 of the dynamic D flip-flop shown in FIG. 8B is different from the second latch unit 404 of the dynamic D flip-flop shown in FIG. 8A in that the first PMOS transistor 406 and the second PMOS transistor are 407 , control of the gates of the first NMOS transistor 408 and the second NMOS transistor 409 .
- the second latch unit 404 of the dynamic D flip-flop shown in FIG. 8B is different from the second latch unit 404 of the dynamic D flip-flop shown in FIG. 8A in that the first PMOS transistor 406 and the second PMOS transistor are 407 , control of the gates of the first NMOS transistor 408 and the second NMOS transistor 409 .
- the gate of the second PMOS transistor 407 and the gate of the first NMOS transistor 408 may be connected together to form a second latch
- the input terminal of the memory unit 404 is connected to the output terminal of the first latch unit 405, so that the gate of the second PMOS transistor 407 and the gate of the first NMOS transistor 408 can be used by the output of the first latch unit 405.
- Control; the gate of the first PMOS transistor 406 may be controlled by the clock signal CLKN, and the gate of the second NMOS transistor 409 may be controlled by the clock signal CLKP.
- the second latch unit 404 is in a high-impedance state, and the data output by the first latch unit 412 at the node 402 cannot pass through the second latch unit 404 . Since the data at the node 402 cannot pass through the second latching unit 404, the data at the node 402 can be latched at the node 402 to keep the original state and play the role of data registration.
- the output data of the dynamic D flip-flop at node 403 as shown in FIG. 8B is in phase with the input data at node 401 .
- Figure 8C shows a schematic circuit diagram of a dynamic D flip-flop that is a variation of the dynamic D flip-flop shown in Figure 8A.
- the second latch unit 404 of the dynamic D flip-flop shown in FIG. 8C is the same as the second latch unit 404 of the dynamic D flip-flop shown in FIG. 8A , and will not be described in detail here.
- the difference between the first latch unit 412 of the dynamic D flip-flop shown in FIG. 8C and the first latch unit 412 of the dynamic D flip-flop shown in FIG. 8A is that the fourth PMOS transistor 413 and the fifth PMOS transistor are 414 , control of the gates of the fourth NMOS transistor 415 and the fifth NMOS transistor 416 .
- the first latch unit 412 of the dynamic D flip-flop shown in FIG. 8C the first latch unit 412 of the dynamic D flip-flop shown in FIG.
- the gate of the fifth PMOS transistor 414 and the gate of the fourth NMOS transistor 415 may be connected together to form a first latch
- the input terminal of the storage unit 412 receives input data from the input terminal, so that the gate of the fifth PMOS transistor 414 and the gate of the fourth NMOS transistor 415 can be controlled by the input data; the gate of the fourth PMOS transistor 413 can be controlled by the clock signal Controlled by CLKP, the gate of the fifth NMOS transistor 416 may be controlled by the clock signal CLKN.
- the output data of the dynamic D flip-flop at node 403 is in phase with the input data at node 401 as shown in FIG. 8C .
- Figure 8D shows a schematic circuit diagram of a dynamic D flip-flop that is a variation of the dynamic D flip-flop shown in Figure 8A.
- the first latch unit 412 of the dynamic D flip-flop shown in FIG. 8D is the same as the first latch unit 412 of the dynamic D flip-flop shown in FIG. 8C , and will not be described in detail here.
- the second latch unit 404 of the dynamic D flip-flop shown in FIG. 8D is the same as the second latch unit 404 of the dynamic D flip-flop shown in FIG. 8B , and will not be described in detail here.
- the output data of the dynamic D flip-flop at node 403 is in phase with the input data at node 401 as shown in FIG. 8D .
- FIGS. 8A-8D are circuit timing diagram illustrating a dynamic D flip-flop according to FIGS. 8A-8D.
- the first latch unit 412 is in a conducting state, inverting the input data at the input end of the dynamic D flip-flop 400 and storing it at the node 402 .
- the transistors in the second latch unit 404 controlled by the clock signals CLKN and CLKP are in a non-conducting state, the second latch unit 404 is in a high-impedance state, and the data at the node 402 cannot pass through the second latch unit 404 .
- the data at the node 403 can be locked at the node 403 to keep the original state and play the role of data registration.
- the output of the dynamic D flip-flop 400 maintains the original state.
- a dynamic D flip-flop that is active on the falling edge can be implemented by swapping the clock control signals of the dynamic D flip-flop that is active on the rising edge as shown in FIGS.
- the clock control signals of the dynamic D flip-flops with valid rising edges are exchanged to realize the dynamic D flip-flops with valid falling edges as shown in FIGS. 6A-6B , which will not be described in detail here.
- the register 1000 illustrates a register including a plurality of dynamic D flip-flops connected in parallel according to embodiments of the present disclosure.
- the register 1000 includes a plurality of dynamic D flip-flops 1001 connected in parallel, a clock buffer 1002, a clock signal terminal CK, a plurality of input terminals D(n) and a plurality of output terminals Q(n), where n Represents n-way input/output.
- a plurality of input terminals D(n) are used for receiving input data; a plurality of output terminals Q(n) are used for outputting data; the clock signal terminal CK is used for receiving external clock signals;
- a plurality of dynamic D flip-flops provide control clock signals, the control clock signals include clock signals CLKP and CLKN, the clock signal CLKP and the clock signal CLKN are inverted, and a plurality of dynamic D flip-flops 1001 are connected in parallel to a plurality of input terminals and a plurality of output terminals In between, it is used to latch and/or read out data under the control of a control clock signal, wherein the dynamic D flip-flop 1001 is the dynamic D flip-flop described in conjunction with FIGS. 1-9 according to an embodiment of the present disclosure.
- one clock buffer in the present disclosure drives multiple dynamic D flip-flops simultaneously, which can effectively reduce the area and power consumption.
- the registers claimed in the present disclosure further have the advantages of reduced area and reduced power compared to conventional registers.
- the present disclosure also provides an apparatus for a Bitcoin mining algorithm, comprising the above dynamic D flip-flop or the above register applying the dynamic D flip-flop.
- the word "exemplary” means “serving as an example, instance, or illustration” rather than as a “model” to be exactly reproduced. Any implementation illustratively described herein is not necessarily to be construed as preferred or advantageous over other implementations. Furthermore, the present disclosure is not to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or detailed description.
Landscapes
- Logic Circuits (AREA)
- Shift Register Type Memory (AREA)
Abstract
Description
Claims (19)
- 一种动态D触发器,包括:输入端,用于接收输入数据;输出端,用于提供输出数据来响应所述输入数据;时钟信号端,用于接收时钟信号;第一锁存单元,用于锁存来自输入端的输入数据并在时钟信号的控制下传输所述输入数据;以及第二锁存单元,用于锁存来自第一锁存单元的数据并在时钟信号的控制下传输第一锁存单元锁存的数据;其中,第一锁存单元和第二锁存单元依次串联连接在输入端和输出端之间;其中,输出端被配置为将来自第二锁存单元的数据作为输出数据输出,以及其中,所述输出数据与所述输入数据同相。
- 根据权利要求1所述的动态D触发器,其中,所述第二锁存单元为三态门。
- 根据权利要求2所述的动态D触发器,其中,所述第二锁存单元包括第一PMOS晶体管、第二PMOS晶体管、第一NMOS晶体管以及第二NMOS晶体管,所述第二锁存单元的所述第一PMOS晶体管、所述第二PMOS晶体管、所述第一NMOS晶体管以及所述第二NMOS晶体管依次串联连接在电源和地之间。
- 根据权利要求3所述的动态D触发器,其中,所述时钟信号包括第一时钟信号和第二时钟信号,所述第一时钟信号与所述第二时钟信号反相。
- 根据权利要求4所述的动态D触发器,其中,所述第一锁存单元 为传输门。
- 根据权利要求5所述的动态D触发器,其中,所述传输门包括第三PMOS晶体管和第三NMOS晶体管,所述第三PMOS晶体管和所述第三NMOS晶体管并联连接在所述动态D触发器的所述输入端和所述传输门的输出端之间。
- 根据权利要求6所述的动态D触发器,其中,所述第一锁存单元的第三PMOS晶体管的栅极和所述第二锁存单元的第一NMOS晶体管的栅极由所述第一时钟信号控制,所述第一锁存单元的第三NMOS晶体管的栅极和所述第二锁存单元的第二PMOS晶体管的栅极由所述第二时钟信号控制,以及所述第二锁存单元的所述第一PMOS晶体管的栅极和所述第二NMOS晶体管的栅极由所述第一锁存单元的输出控制。
- 根据权利要求6所述的动态D触发器,其中,所述第一锁存单元的第三PMOS晶体管的栅极和所述第二锁存单元的第二NMOS晶体管的栅极由所述第一时钟信号控制,所述第一锁存单元的第三NMOS晶体管的栅极和所述第二锁存单元的第一PMOS晶体管的栅极由所述第二时钟信号控制,以及所述第二锁存单元的所述第二PMOS晶体管的栅极和所述第一NMOS晶体管的栅极由所述第一锁存单元的输出控制。
- 根据权利要求4所述的动态D触发器,其中,所述第一锁存单元为三态门。
- 根据权利要求9所述的动态D触发器,其中,所述第一锁存单元包括第四PMOS晶体管、第五PMOS晶体管、第四NMOS晶体管以及第五NMOS晶体管,所述第一锁存单元的所述第四PMOS晶体管、所述第五PMOS晶体管、所述第四NMOS晶体管以及所述第五NMOS晶体 管依次串联连接在电源和地之间。
- 如权利要求10所述的动态D触发器,其中,所述第一锁存单元的所述第五PMOS晶体管的栅极和所述第二锁存单元的所述第一NMOS晶体管的栅极由所述第一时钟信号控制,所述第一锁存单元的所述第四NMOS晶体管的栅极和所述第二锁存单元的所述第二PMOS晶体管的栅极由所述第二时钟信号控制,所述第一锁存单元的所述第四PMOS晶体管的栅极和所述第五NMOS晶体管的栅极由所述输入数据控制,以及所述第二锁存单元的所述第一PMOS晶体管的栅极和所述第二NMOS晶体管的栅极由所述第一锁存单元的输出控制。
- 如权利要求10所述的动态D触发器,其中,所述第一锁存单元的所述第五PMOS晶体管的栅极和所述第二锁存单元的所述第二NMOS晶体管的栅极由所述第一时钟信号控制,所述第一锁存单元的所述第四NMOS晶体管的栅极和所述第二锁存单元的所述第一PMOS晶体管的栅极由所述第二时钟信号控制,所述第一锁存单元的所述第四PMOS晶体管的栅极和所述第五NMOS晶体管的栅极由所述输入数据控制,以及所述第二锁存单元的所述第二PMOS晶体管的栅极和所述第一NMOS晶体管的栅极由所述第一锁存单元的输出控制。
- 如权利要求10所述的动态D触发器,其中,所述第一锁存单元的所述第四PMOS晶体管的栅极和所述第二锁存单元的所述第一NMOS晶体管的栅极由所述第一时钟信号控制,所述第一锁存单元的所述第五NMOS晶体管的栅极和所述第二锁存单元的所述第二PMOS晶体管的栅极由所述第二时钟信号控制,所述第一锁存单元的所述第四NMOS晶体管的栅极和所述第五PMOS晶体管的栅极由所述输入数据控制,以及所述第二锁存单元的所述第一PMOS晶体管的栅极和所述第二 NMOS晶体管的栅极由所述第一锁存单元的输出控制。
- 如权利要求10所述的动态D触发器,其中,所述第一锁存单元的所述第四PMOS晶体管的栅极和所述第二锁存单元的所述第二NMOS晶体管的栅极由所述第一时钟信号控制,所述第一锁存单元的所述第五NMOS晶体管的栅极和所述第二锁存单元的所述第一PMOS晶体管的栅极由所述第二时钟信号控制,所述第一锁存单元的所述第四NMOS晶体管的栅极和所述第五PMOS晶体管的栅极由所述输入数据控制,以及所述第二锁存单元的所述第二PMOS晶体管的栅极和所述第一NMOS晶体管的栅极由所述第一锁存单元的输出控制。
- 根据权利要求4-14中任一项所述的动态D触发器,其中,所述动态D触发器还包括时钟缓冲器,所述时钟缓冲器用于基于外部时钟信号生成所述第一时钟信号和所述第二时钟信号,其中,所述第一时钟信号与所述外部时钟信号同相或反相。
- 一种寄存器,包括:多个输入端,用于接收输入数据;多个输出端,用于输出数据;时钟信号端,用于接收外部时钟信号;时钟缓冲器,用于基于所述外部时钟信号向多个动态D触发器提供控制时钟信号,所述控制时钟信号包括第一时钟信号及第二时钟信号,所述第一时钟信号与所述第二时钟信号反相,多个动态D触发器并联连接在所述多个输入端和所述多个输出端之间,用于在所述控制时钟信号的控制下执行锁存和读出数据中的至少一种,其中所述动态D触发器是根据权利要求1至14中的任一项所述的动态D触发器。
- 根据权利要求16所述的寄存器,其中,所述第一时钟信号与所述外部时钟信号同相或反相。
- 一种芯片,包括根据权利要求1至15中的任一项所述的动态D触发器或者根据权利要求16至17中的任一项所述的寄存器。
- 一种数据处理装置,用于执行数字货币加密算法,包括根据权利要求18所述的芯片。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18/032,896 US20230396242A1 (en) | 2020-12-09 | 2021-08-18 | Dynamic d flip-flop, register, chip, and data processing apparatus |
KR1020237018359A KR20230096098A (ko) | 2020-12-09 | 2021-08-18 | 동적 d 플립-플롭, 레지스터, 칩 및 데이터 처리 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011428628.3 | 2020-12-09 | ||
CN202011428628.3A CN114629469A (zh) | 2020-12-09 | 2020-12-09 | 动态d触发器、寄存器、芯片和执行比特币挖矿的装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022121365A1 true WO2022121365A1 (zh) | 2022-06-16 |
Family
ID=80787986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2021/113230 WO2022121365A1 (zh) | 2020-12-09 | 2021-08-18 | 动态d触发器、寄存器、芯片和数据处理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230396242A1 (zh) |
KR (1) | KR20230096098A (zh) |
CN (1) | CN114629469A (zh) |
TW (1) | TWI802964B (zh) |
WO (1) | WO2022121365A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117220649A (zh) * | 2023-11-07 | 2023-12-12 | 浙江大学 | 用于高速八选一多路复用器的锁存器 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114563693B (zh) * | 2022-04-28 | 2022-12-16 | 深圳比特微电子科技有限公司 | 基于半静态d触发器的支持可测性设计的电路 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180123568A1 (en) * | 2016-10-28 | 2018-05-03 | Qualcomm Incorporated | Semi-data gated flop with low clock power/low internal power with minimal area overhead |
CN110635786A (zh) * | 2018-06-25 | 2019-12-31 | 北京嘉楠捷思信息技术有限公司 | 动态d触发器 |
CN110677141A (zh) * | 2019-09-30 | 2020-01-10 | 杭州嘉楠耘智信息科技有限公司 | 动态d触发器、数据运算单元、芯片、算力板及计算设备 |
CN110708041A (zh) * | 2019-09-30 | 2020-01-17 | 杭州嘉楠耘智信息科技有限公司 | 漏电反馈动态d触发器、数据运算单元、芯片、算力板及计算设备 |
CN111600577A (zh) * | 2020-06-22 | 2020-08-28 | 深圳比特微电子科技有限公司 | 反相输出动态d触发器 |
CN214154471U (zh) * | 2020-12-09 | 2021-09-07 | 深圳比特微电子科技有限公司 | 动态d触发器、寄存器、芯片和执行比特币挖矿的装置 |
-
2020
- 2020-12-09 CN CN202011428628.3A patent/CN114629469A/zh active Pending
-
2021
- 2021-08-18 KR KR1020237018359A patent/KR20230096098A/ko unknown
- 2021-08-18 WO PCT/CN2021/113230 patent/WO2022121365A1/zh active Application Filing
- 2021-08-18 US US18/032,896 patent/US20230396242A1/en active Pending
- 2021-08-18 TW TW110130454A patent/TWI802964B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180123568A1 (en) * | 2016-10-28 | 2018-05-03 | Qualcomm Incorporated | Semi-data gated flop with low clock power/low internal power with minimal area overhead |
CN110635786A (zh) * | 2018-06-25 | 2019-12-31 | 北京嘉楠捷思信息技术有限公司 | 动态d触发器 |
CN110677141A (zh) * | 2019-09-30 | 2020-01-10 | 杭州嘉楠耘智信息科技有限公司 | 动态d触发器、数据运算单元、芯片、算力板及计算设备 |
CN110708041A (zh) * | 2019-09-30 | 2020-01-17 | 杭州嘉楠耘智信息科技有限公司 | 漏电反馈动态d触发器、数据运算单元、芯片、算力板及计算设备 |
CN111600577A (zh) * | 2020-06-22 | 2020-08-28 | 深圳比特微电子科技有限公司 | 反相输出动态d触发器 |
CN214154471U (zh) * | 2020-12-09 | 2021-09-07 | 深圳比特微电子科技有限公司 | 动态d触发器、寄存器、芯片和执行比特币挖矿的装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117220649A (zh) * | 2023-11-07 | 2023-12-12 | 浙江大学 | 用于高速八选一多路复用器的锁存器 |
CN117220649B (zh) * | 2023-11-07 | 2024-04-16 | 浙江大学 | 用于高速八选一多路复用器的锁存器 |
Also Published As
Publication number | Publication date |
---|---|
CN114629469A (zh) | 2022-06-14 |
TW202201902A (zh) | 2022-01-01 |
TWI802964B (zh) | 2023-05-21 |
KR20230096098A (ko) | 2023-06-29 |
US20230396242A1 (en) | 2023-12-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI807305B (zh) | 反相輸出動態d觸發器 | |
CN212726968U (zh) | 反相输出动态d触发器、多路并联寄存器及比特币挖矿算法的装置 | |
US6686787B2 (en) | High-speed fully balanced differential flip-flop with reset | |
WO2022121365A1 (zh) | 动态d触发器、寄存器、芯片和数据处理装置 | |
CN214154471U (zh) | 动态d触发器、寄存器、芯片和执行比特币挖矿的装置 | |
US20070182453A1 (en) | Circuit and method for outputting data in semiconductor memory apparatus | |
WO2020001167A1 (zh) | 动态d触发器、数据运算单元、芯片、算力板及计算设备 | |
US10878857B2 (en) | Dynamic data storage element, and integrated circuit having the same | |
CN110635783A (zh) | 正反馈动态d触发器 | |
JPH11186882A (ja) | Dフリップフロップ | |
US10453520B2 (en) | Multi-port memory and semiconductor device | |
US7958418B2 (en) | Circuit arrangement, electronic mechanism, electrical turn out and procedures for the operation of one circuit arrangement | |
JP2011250391A (ja) | データ伝送回路及び伝送方法並びにデータ伝送回路を備えるメモリ装置 | |
KR100896177B1 (ko) | 고속 플립플롭 | |
WO2023207351A1 (zh) | 锁存器以及包括锁存器的处理器和计算装置 | |
KR20090059580A (ko) | 고성능 반도체 소자에 채용하기 적합한 플립플롭 회로 | |
JP3573687B2 (ja) | データ一時記憶装置 | |
CN110635786A (zh) | 动态d触发器 | |
KR102643441B1 (ko) | 반도체 장치의 클럭 생성 회로 | |
KR20090006577A (ko) | 반도체메모리소자의 입력 버퍼 | |
CN110635785A (zh) | 低漏电流动态d触发器 | |
KR100585085B1 (ko) | 고속 메모리 장치의 데이타 독출 경로에 구비되는 데이타전송 회로 | |
KR20030058254A (ko) | 클럭드 감지증폭기와 래치를 구비한 반도체 소자 | |
US7764100B2 (en) | DFLOP circuit for an externally asynchronous-internally clocked system | |
KR100885487B1 (ko) | 반도체메모리소자의 입력장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21902074 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 18032896 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20237018359 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21902074 Country of ref document: EP Kind code of ref document: A1 |