WO2022114191A1 - 切削工具 - Google Patents
切削工具 Download PDFInfo
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- WO2022114191A1 WO2022114191A1 PCT/JP2021/043682 JP2021043682W WO2022114191A1 WO 2022114191 A1 WO2022114191 A1 WO 2022114191A1 JP 2021043682 W JP2021043682 W JP 2021043682W WO 2022114191 A1 WO2022114191 A1 WO 2022114191A1
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- Prior art keywords
- group
- sintered body
- diamond
- cutting tool
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- Prior art date
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- 238000005520 cutting process Methods 0.000 title claims abstract description 159
- 239000010432 diamond Substances 0.000 claims abstract description 144
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 143
- 239000002245 particle Substances 0.000 claims abstract description 93
- 239000011230 binding agent Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 230000000737 periodic effect Effects 0.000 claims description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 229910017052 cobalt Inorganic materials 0.000 claims description 14
- 239000010941 cobalt Substances 0.000 claims description 14
- 150000002739 metals Chemical class 0.000 claims description 12
- 229910000765 intermetallic Inorganic materials 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910021480 group 4 element Inorganic materials 0.000 claims description 7
- 229910021478 group 5 element Inorganic materials 0.000 claims description 7
- 229910021476 group 6 element Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000006104 solid solution Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 26
- 238000005259 measurement Methods 0.000 description 25
- 239000000843 powder Substances 0.000 description 25
- 238000005245 sintering Methods 0.000 description 21
- 238000012545 processing Methods 0.000 description 20
- 239000011812 mixed powder Substances 0.000 description 15
- 238000010998 test method Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 9
- 238000001878 scanning electron micrograph Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000010955 niobium Substances 0.000 description 8
- 238000002156 mixing Methods 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 230000005469 synchrotron radiation Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
- C04B35/528—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite obtained from carbonaceous particles with or without other non-organic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/18—Cutting tools of which the bits or tips or cutting inserts are of special material with cutting bits or tips or cutting inserts rigidly mounted, e.g. by brazing
- B23B27/20—Cutting tools of which the bits or tips or cutting inserts are of special material with cutting bits or tips or cutting inserts rigidly mounted, e.g. by brazing with diamond bits or cutting inserts
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2200/00—Details of cutting inserts
- B23B2200/04—Overall shape
- B23B2200/049—Triangular
- B23B2200/0495—Triangular rounded
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2226/00—Materials of tools or workpieces not comprising a metal
- B23B2226/31—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/148—Composition of the cutting inserts
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/427—Diamond
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/963—Surface properties, e.g. surface roughness
Definitions
- Patent Document 1 Japanese Patent Application Laid-Open No. 2005-239472
- Patent Document 1 describes a high-strength, high-wear-resistant diamond sintered body having sintered diamond particles having an average particle size of 2 ⁇ m or less and the remaining bonded phase.
- the content of the sintered diamond particles in the diamond sintered body is 80% by mass or more and 98% by volume or less, and the content in the bonded phase is 0.5% by mass or more and less than 50% by mass.
- At least one element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, and molybdenum, and the content in the bonded phase is 50% by mass or more and less than 99.5% by mass.
- the bonded phase contains cobalt, and a part or all of at least one element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, and molybdenum has an average particle size of 0.8 ⁇ m.
- a high-strength, high-wear-resistant diamond sintered body which exists as the following carbide particles, the structure of the carbide particles is discontinuous, and the adjacent diamond particles are bonded to each other. Has been done.
- the cutting tool of the present disclosure is a cutting tool having a rake face, a flank surface, and a cutting edge ridge line connecting the rake face and the flank surface.
- a part of the rake face and a part of the flank surface adjacent to the cutting edge ridge line are composed of a diamond sintered body containing diamond particles.
- the dislocation density in a part of the flank is 8 ⁇ 10 15 / m 2 or less.
- the average particle size of diamond particles is 0.1 ⁇ m or more and 50 ⁇ m or less.
- the content of diamond particles in the diamond sintered body is 80% by volume or more and 99% by volume or less.
- FIG. 1 is a plan view of the cutting insert 100.
- FIG. 2 is a perspective view of the cutting insert 100.
- FIG. 3 is an enlarged perspective schematic view showing the cutting edge portion 20 of the cutting insert 100.
- FIG. 4 is an enlarged side view of the cutting edge portion 20 shown in FIG.
- FIG. 5 is a schematic perspective view showing a cutting edge portion 20 used as a cutting insert.
- FIG. 6 is a process diagram showing a method of manufacturing a cutting insert.
- the cutting tool according to the embodiment is a cutting tool having a rake face, a flank surface, and a cutting edge ridge line connecting the rake face and the flank surface.
- a part of the rake face and a part of the flank surface adjacent to the cutting edge ridge line are composed of a diamond sintered body containing diamond particles.
- the dislocation density in a part of the flank is 8 ⁇ 10 15 / m 2 or less.
- the average particle size of diamond particles is 0.1 ⁇ m or more and 50 ⁇ m or less.
- the content of diamond particles in the diamond sintered body is 80% by volume or more and 99% by volume or less.
- the wear resistance of the flank is improved by suppressing the decrease in the strength of the diamond particles on the flank. As a result, the life of the cutting tool is improved.
- the dislocation density of the diamond sintered body in a part of the flank may be 7 ⁇ 10 15 / m 2 or less.
- the diamond sintered body may contain a binder.
- the binder may contain at least one selected from the group consisting of elemental metals, alloys, and intermetallic compounds. Single metals, alloys and intermetallic compounds were selected from the group consisting of Group 4 elements of the Periodic Table, Group 5 elements of the Periodic Table, Group 6 elements of the Periodic Table, iron, aluminum, silicon, cobalt and nickel. It may contain at least one metal element.
- the diamond sintered body may contain a binder.
- the binder may contain at least one selected from the group consisting of a compound and a solid solution derived from the compound.
- the compound may consist of at least one selected from the group consisting of elemental metals, alloys and intermetallic compounds and at least one selected from the group consisting of nitrogen, carbon and oxygen.
- Single metals, alloys and intermetallic compounds were selected from the group consisting of Group 4 elements of the Periodic Table, Group 5 elements of the Periodic Table, Group 6 elements of the Periodic Table, iron, aluminum, silicon, cobalt and nickel. It may contain at least one metal element.
- the binder may contain cobalt.
- the surface roughness Ra on a part of the rake face may be 120 nm or less.
- the tool life can be further improved.
- the dislocation density in a part of the rake face may be 10 ⁇ 10 15 / m 2 or less.
- the cutting tool of (7) above the amount of crater wear on the rake face can be reduced. Therefore, the tool life can be further improved.
- the dislocation density in a part of the flank surface may be less than or equal to the dislocation density in a part of the rake face, or may be less than the dislocation density in a part of the rake face.
- the cutting tools (1) to (7) above may be provided with a base material for holding the diamond sintered body.
- the portion including the cutting edge ridge line is made of a diamond sintered body, while the base material which is another part can be made of a material cheaper than the diamond sintered body such as a metal material. .. Therefore, the manufacturing cost of the cutting tool can be reduced.
- the entire rake surface and the entire flank surface may be made of a diamond sintered body.
- the tool life can be surely improved by forming the entire surface of the rake face and the flank surface related to the tool life with the diamond sintered body.
- the cutting tool according to the embodiment is, for example, a cutting insert 100.
- the cutting tool according to the embodiment is not limited to the cutting insert 100, but the cutting insert 100 will be described below as an example of the cutting tool according to the embodiment.
- FIG. 1 is a plan view of the cutting insert 100.
- FIG. 2 is a perspective view of the cutting insert 100.
- FIG. 3 is an enlarged perspective schematic view showing the cutting edge portion 20 of the cutting insert 100.
- FIG. 4 is an enlarged side view of the cutting edge portion 20 shown in FIG.
- the cutting insert 100 has a base material 10 and a cutting edge portion 20 as a diamond sintered body.
- the cutting insert 100 has a polygonal shape (for example, a triangular shape) in a plan view.
- the polygonal shape does not have to be a strict polygonal shape (triangular shape). More specifically, the corners of the cutting insert 100 in a plan view may be rounded.
- the base material 10 has a polygonal shape (for example, a triangular shape) in a plan view.
- the base material 10 has a top surface 10a, a bottom surface 10b, and a side surface 10c.
- the top surface 10a and the bottom surface 10b are end faces of the base material 10 in the thickness direction.
- the bottom surface 10b is the opposite surface of the top surface 10a in the thickness direction of the base material 10.
- the side surface 10c is a surface connected to the top surface 10a and the bottom surface 10b.
- the top surface 10a has a mounting portion 10d.
- the mounting portion 10d is located at the corner of the top surface 10a in a plan view.
- the distance between the top surface 10a and the bottom surface 10b in the mounting portion 10d is smaller than the distance between the top surface 10a and the bottom surface 10b other than the mounting portion 10d. That is, there is a step between the mounting portion 10d and the portion of the top surface 10a other than the mounting portion 10d.
- a through hole 11 is formed in the base material 10.
- the through hole 11 penetrates the base material 10 in the thickness direction.
- the through hole 11 is formed in the center of the base material 10 in a plan view.
- the cutting insert 100 is subjected to cutting, for example, by inserting a fixing member (not shown) into the through hole 11 and fastening the fixing member to a tool holder (not shown).
- the base material 10 is formed of, for example, a cemented carbide.
- Cemented carbide is a composite material obtained by sintering carbide particles and a binder.
- the carbide particles are, for example, particles such as tungsten carbide, titanium carbide, and tantalum carbide.
- the binder is, for example, cobalt, nickel, iron or the like.
- the base material 10 may be formed of a material other than the cemented carbide.
- the cutting edge portion 20 is attached to the attachment portion 10d.
- the cutting edge portion 20 is attached to the base material 10 by, for example, brazing.
- the cutting edge portion 20 has a rake surface 20a, a flank surface 20b, and a cutting edge 20c.
- the rake face 20a is connected to a portion of the top surface 10a other than the mounting portion 10d.
- the flank 20b is connected to the side surface 10c.
- the cutting edge 20c is formed on the ridgeline between the rake surface 20a and the flank surface 20b.
- the cutting edge portion 20 is formed of a sintered body containing diamond particles and a binder. From a different point of view, in the cutting edge portion 20, a part of the rake face 20a and a part of the flank surface 20b adjacent to the cutting edge 20c which is the cutting edge ridge line are composed of a diamond sintered body containing diamond particles.
- Dislocation density of diamond sintered body The dislocation density in a part of the flank 20b is 8 ⁇ 10 15 / m 2 or less.
- the dislocation density of the diamond sintered body (specifically, diamond particles) in a part of the flank surface 20b may be 7 ⁇ 10 15 / m 2 or less.
- the dislocation density in a part of the rake face 20a may be 10 ⁇ 10 15 / m 2 or less.
- the dislocation density in a part of the flank surface 20b may be less than or equal to the dislocation density in a part of the rake face 20a, or may be less than the dislocation density in a part of the rake face 20b.
- the dislocation density of the diamond particles is 8 ⁇ 10 15 / m 2 or less, the generation of cracks in the diamond particles is suppressed, the decrease in strength is suppressed, and the diamond sintered body having excellent wear resistance is obtained. Further, the diamond sintered body has a relatively high thermal conductivity. Therefore, it is possible to suppress thermal wear generated by the temperature rise of the cutting edge during cutting.
- the present inventors have confirmed that a diamond sintered body having a dislocation density of diamond particles of less than 8.1 ⁇ 10 13 / m 2 cannot be produced.
- the dislocation density in a part of the flank 20b may be 8.1 ⁇ 10 13 / m 2 or more and 8 ⁇ 10 15 / m 2 or less, and 8.1 ⁇ 10 13 / m 2 or more 7 ⁇ 10 15 /. It may be m 2 or less.
- the dislocation density in a part of the rake face 20a may be 8.1 ⁇ 10 13 / m 2 or more and 10 ⁇ 10 15 / m 2 or less.
- the conventional diamond sintered body (for example, the diamond sintered body described in Patent Document 1) has a dislocation density of diamond particles of 1.01 ⁇ 10 16 / m 2 or more and 1.18 ⁇ 10 16 . It has been revealed that it is less than / m 2 .
- the measurement position of the dislocation density in a part of the flank surface 20b is a position adjacent to the cutting edge 20c which is the cutting edge ridge line as shown in FIGS. 3 and 4.
- the virtual point 20cc is set at a position separated from an arbitrary position 20ca of the cutting edge 20c by a distance L (specifically, 100 ⁇ m) in the direction perpendicular to the rake face 20a.
- a straight line is drawn from the virtual point 20cc in a direction parallel to the rake face 20a and perpendicular to the tangent line at an arbitrary position 20ca of the cutting edge 20c.
- the intersection 20cc between the straight line and the flank 20b is set as the measurement position of the dislocation density.
- a virtual line along the cutting edge 20c is located at a position on the rake face 20a at a certain distance (specifically, 100 ⁇ m) from the cutting edge 20c. Is drawn, and an arbitrary position on the virtual line is set as the measurement position.
- the dislocation density of the diamond sintered body is measured at a large synchrotron radiation facility (for example, Kyushu Synchrotron Radiation Research Center (Saga Prefecture)). Specifically, it is measured by the following method.
- the observation surface (rake surface 20a and whiskers surface 20b) of the test piece including the above-mentioned measurement position on the cutting edge portion 20 is mirror-polished with a diamond slurry having an average particle size of 3 ⁇ m, and then immersed in hydrochloric acid for 72 hours. As a result, the bound phase is dissolved in hydrochloric acid on the observation surface of the test piece, and diamond particles remain.
- X-ray diffraction measurement was performed on the measurement position of the test piece under the following conditions, and the main orientations of diamond (111), (220), (311), (331), (422), (440), and so on.
- the line profile of the diffraction peak from each azimuth plane of (531) is obtained.
- X-ray source Synchrotron radiation Device condition: Detector NaI (cuts fluorescence by appropriate ROI) Energy: 18 keV (wavelength: 0.6888 ⁇ )
- Spectral crystal Si (111)
- Incident slit width 3 mm x height 0.5 mm
- Light receiving slit Double slit (width 3 mm x height 0.5 mm)
- Mirror Platinum coated mirror Incident angle: 2.5mrad Scanning method: 2 ⁇ - ⁇ scan Measurement peaks: 7 diamonds (111), (220), (311), (331), (422), (440), (531). However, if it is difficult to obtain a profile due to texture, orientation, etc., the peak of the surface index is excluded.
- Measurement conditions Make sure that the number of measurement points is 9 or more within the full width at half maximum corresponding to each measurement peak.
- the peak top intensity shall be 2000 counts or more. Since the tail of the peak is also used for analysis, the measurement range is about 10 times the full width at half maximum.
- the line profile obtained by the above-mentioned X-ray diffraction measurement has a shape including both the true spread due to physical quantities such as non-uniform strain of the test piece and the spread due to the device.
- the instrument-derived components are removed from the measured line profile to obtain a true line profile.
- the true line profile is obtained by fitting the obtained line profile and the device-derived line profile by a pseudo Voigt function and subtracting the device-derived line profile.
- LaB 6 is used as a standard sample for removing the diffraction line spread caused by the device. Further, when synchrotron radiation having high parallelism is used, the diffraction line spread caused by the device can be regarded as 0.
- the dislocation density is calculated by analyzing the obtained true line profile using the modified Williamson-Hall method and the modified Warren-Averbach method.
- the modified Williamson-Hall method and the modified Warren-Averbach method are known line profile analysis methods used to determine the dislocation density.
- ⁇ K indicates the half width of the line profile.
- D indicates the crystallite size.
- M indicates an arrangement parameter.
- b represents a Burgers vector.
- ⁇ indicates the dislocation density.
- K indicates a scattering vector.
- O (K 2 C) indicates a higher-order term of K 2 C.
- C indicates the average value of the contrast factor.
- C in the above formula (I) is represented by the following formula (II).
- C C h00 [1-q (h 2 k 2 + h 2 l 2 + k 2 l 2 ) / (h 2 + k 2 + l 2 ) 2 ]
- the contrast factor Ch00 and the coefficient q related to the contrast factor in the spiral dislocation and the blade dislocation are calculated code ANIZC
- the slip system is ⁇ 110> ⁇ 111 ⁇
- the elastic stiffness C 11 is 1076 GPa.
- C 12 is 125 GPa
- C 44 is 576 GPa.
- h, k and l correspond to the Miller index (hkl) of diamond, respectively.
- the contrast factor C h00 is a spiral dislocation 0.183 and a blade dislocation 0.204.
- the coefficients q with respect to the contrast factor are spiral dislocations 1.35 and blade dislocations 0.30.
- the spiral dislocation ratio is fixed at 0.5 and the blade dislocation ratio is fixed at 0.5.
- the present inventors have confirmed that as long as the dislocation density of diamond particles is measured in the same sample, there is almost no variation in the measurement results even if the measurement range is changed and the calculation is performed multiple times. That is, the present inventors think that it is not arbitrary even if the measurement field of view is arbitrarily set.
- the diamond sintered body contains a binder.
- the binder may contain at least one selected from the group consisting of elemental metals, alloys, and intermetallic compounds. Single metals, alloys and intermetal compounds are a group consisting of Group 4 elements of the Periodic Table, Group 5 elements of the Periodic Table, Group 6 elements of the Periodic Table, iron, aluminum, silicon, cobalt and nickel (hereinafter, "" It may also contain at least one metal element selected from "Group A").
- the binder may contain at least one selected from the group consisting of a compound and a solid solution derived from the compound.
- the compound is at least one selected from the group consisting of elemental metals, alloys and intermetallic compounds, and at least one selected from the group consisting of nitrogen, carbon and oxygen (hereinafter, also referred to as "group B"). It may consist of.
- Single metals, alloys and intermetallic compounds were selected from the group consisting of Group 4 elements of the Periodic Table, Group 5 elements of the Periodic Table, Group 6 elements of the Periodic Table, iron, aluminum, silicon, cobalt and nickel. It may contain at least one metal element.
- the binder can be in any of the following forms (a) to (f).
- the binder is composed of at least one selected from the group consisting of elemental metals containing at least one metal element selected from group A, alloys, and intermetallic compounds.
- the binder contains at least one selected from the group consisting of elemental metals, alloys, and intermetallic compounds containing at least one metal element selected from group A.
- the binder is selected from the group consisting of a compound consisting of at least one metal element selected from group A, at least one non-metal element selected from group B, and a solid solution derived from the compound. Consists of at least one species.
- the binder is selected from the group consisting of a compound consisting of at least one metal element selected from group A, at least one non-metal element selected from group B, and a solid solution derived from the compound. Includes at least one species.
- the binder is at least one selected from the group consisting of a single metal, an alloy, and an intermetal compound containing at least one metal element selected from group A, and at least one selected from group A. It is composed of a compound composed of the metal element of the above, at least one non-metal element selected from the group B, and at least one selected from the group consisting of a solid solution derived from the above compound.
- the binder is at least one selected from the group consisting of a single metal, an alloy, and an intermetal compound containing at least one metal element selected from group A, and at least one selected from group A.
- Group 4 elements in the periodic table include, for example, titanium (Ti), zirconium (Zr) and hafnium (Hf).
- Group 5 elements of the Periodic Table include, for example, vanadium (V), niobium (Nb) and tantalum (Ta).
- Group 6 elements of the periodic table include, for example, chromium (Cr), molybdenum (Mo) and tungsten (W).
- the binder preferably contains at least one selected from the group consisting of cobalt, titanium, iron, tungsten and boron, and more preferably contains cobalt.
- the binder may contain titanium in addition to cobalt.
- the component with the highest content in the binder is preferably cobalt.
- composition of the binder contained in the diamond sintered body can be specified by the above-mentioned EDX incidental to SEM.
- the average particle size of the diamond particles in the sintered body constituting the cutting edge portion 20 is preferably 0.1 ⁇ m or more and 50 ⁇ m or less.
- the average particle size of the diamond particles may be 0.2 ⁇ m or more and 40 ⁇ m or less.
- the average particle size of the diamond particles is 0.1 ⁇ m or more, the diamond particles are densely sintered, and a diamond sintered body having excellent fracture resistance is obtained. Since the average particle size of the diamond particles is 50 ⁇ m or less, the diamond sintered body has no anisotropy and has excellent cutting stability when used as a cutting tool of a cutting tool.
- the average particle size of the diamond particles is obtained by measuring the median diameter d50 of a plurality of diamond particles in each of five arbitrarily selected measurement fields and calculating the average value thereof. Means the value given. Specifically, the average particle size of the diamond particles in the sintered body constituting the cutting edge portion 20 is calculated by the following method.
- a sample including a cross section is cut out from an arbitrary position of the cutting edge portion 20. This sample is cut out using, for example, a focused ion beam device, a cross polisher device, or the like.
- the cross section of the cut out sample is observed with a scanning electron microscope (SEM).
- SEM image a backscattered electron image (hereinafter referred to as "SEM image") in the cross section of the cut out sample is obtained.
- the magnification is adjusted so that 100 or more diamond particles are included in the measurement field of view.
- SEM images are acquired at five locations within the cross section of the cut sample.
- the distribution of the particle size of the diamond particles contained in the measurement field of view is acquired.
- This image processing is performed by, for example, Win ROOF ver. Manufactured by Mitani Corporation. 7.4.5, WinROOF2018 and the like are used.
- the particle size of each diamond particle is obtained by calculating the equivalent circle diameter from the area of each diamond particle obtained as a result of image processing.
- the diamond particles whose part is outside the measurement field of view are not taken into consideration.
- the median diameter d50 of the diamond particles contained in the measurement field of view is determined from the distribution of the particle size of the diamond particles contained in the measurement field of view obtained as described above.
- the average value of the determined median diameter d50 for the five SEM images is considered to be the average particle size of the diamond particles in the sintered body constituting the cutting edge portion 20.
- the content (volume percent) of diamond particles in the sintered body constituting the cutting edge portion 20 is preferably 80% by volume or more and 99% by volume or less.
- the content (volume percent) of diamond particles in the diamond sintered body is determined by the energy dispersive X-ray analyzer (EDX) attached to the scanning electron microscope (SEM) (“JSM-7800F” (trade name) manufactured by JEOL Ltd.). It can be confirmed by performing microstructure observation, element analysis, etc. on the diamond sintered body using (Octane Electro EDS system) (hereinafter, also referred to as “SEM-EDX”). Specifically, the content of diamond particles in the sintered body constituting the cutting edge portion 20 is calculated by the following method.
- a sample including a cross section is cut out from an arbitrary position of the cutting edge portion 20. This sample is cut out using, for example, a focused ion beam device, a cross polisher device, or the like.
- the cross section of the cut out sample is observed by SEM. This observation gives an SEM image of the cross section of the cut out sample. In the observation by SEM, the magnification is adjusted so that 100 or more diamond particles are included in the measurement field of view. SEM images are acquired at five locations within the cross section of the cut sample.
- the proportion of diamond particles contained in the measurement field of view is calculated by performing image processing on the SEM image.
- This image processing is performed by, for example, Win ROOF ver. Manufactured by Mitani Corporation. It is performed by performing a binarization process of the SEM image using 7.4.5, WinROOF2018 or the like.
- the dark field in the SEM image after the binarization process corresponds to the region where the diamond particles are present.
- the value obtained by dividing the area of the dark field by the area of the measurement region is considered to be the volume ratio of the diamond particles in the sintered body constituting the cutting edge portion 20.
- the surface roughness Ra of a part of the rake face 20a at the cutting edge portion 20 may be 120 nm or less.
- the surface roughness Ra on a part of the rake face 20a may be 55 nm or less.
- the surface roughness Ra can be measured using, for example, a laser microscope.
- the measurement position of the surface roughness Ra is the same position as the measurement position of the dislocation density.
- the "surface roughness Ra” refers to the arithmetic average roughness Ra defined in JIS B 0601, and is extracted from the roughness curve by the reference length in the direction of the average line, and the extracted portion is It is defined as the average value of the total distance (absolute value of deviation) from the average line to the measurement curve.
- FIG. 5 is a schematic perspective view showing a cutting edge portion 20 used as a cutting insert.
- the cutting edge portion 20 shown in FIG. 5 is entirely composed of a diamond sintered body, and the cutting edge portion 20 itself is used as a cutting insert. From a different point of view, in the cutting tool shown in FIG. 5, the entire rake face 20a and the entire flank surface 20b are made of a diamond sintered body.
- FIG. 6 is a process diagram showing a method of manufacturing the cutting insert 100. As shown in FIG.
- the method for manufacturing the cutting insert 100 including the cutting edge portion 20 is a powder preparation step S1, a powder mixing step S2, and a sintering step, which are manufacturing steps of the sintered body constituting the cutting edge portion 20. It has S3 and a processing step S4 including a process for processing the flank surface 20b and the rake surface 20a and a process for fixing the cutting edge portion 20 to the base material 10.
- the raw material powder of diamond particles (hereinafter, also referred to as “diamond powder”) and the raw material powder of the binder (hereinafter, also referred to as “bonding material raw material powder”) are prepared.
- the diamond powder is not particularly limited, and known diamond particles can be used as the raw material powder.
- the average particle size of the diamond powder is not particularly limited, and can be, for example, 0.1 ⁇ m or more and 50 ⁇ m or less.
- the binder raw material powder is not particularly limited, and may be any powder containing elements constituting the binder.
- Examples of the binder raw material powder include cobalt powder and titanium powder.
- the binder raw material powder one kind of powder may be used alone or a plurality of kinds of powders may be used in combination depending on the composition of the target bonding phase.
- the diamond powder and the binder raw material powder are mixed.
- This mixing is performed, for example, using an attritor or a ball mill.
- the mixing method is not limited to these.
- the mixing method may be wet or dry.
- a mixture of diamond powder, binder powder and boron powder will be referred to as “mixed powder”.
- the diamond powder and the binder raw material powder may be mixed at an arbitrary blending ratio so that the content of diamond particles in the diamond sintered body is within the above range.
- the mixed powder is sintered.
- This sintering is performed by arranging the mixed powder in a container and holding the mixed powder at a predetermined sintering temperature at a predetermined sintering pressure.
- This container is made of a refractory metal such as tantalum and niobium in order to prevent impurities from being mixed into the mixed powder (sintered body).
- the sintering step S3 in the present embodiment includes a step S31 for sintering the mixed powder and a step S32 for reducing dislocations in diamond particles, which will be described later.
- the mixed powder is sintered at a sintering pressure of 4 GPa or more and less than 5 GPa and a sintering temperature of 1400 ° C. or more and 1550 ° C. or less for a sintering time of 15 minutes or more and 60 minutes or less. do.
- the route from the state of normal temperature (23 ⁇ 5 ° C.) and atmospheric pressure to the state of the sintering pressure and the sintering temperature is not particularly limited.
- the high-pressure and high-temperature generator used in the method for manufacturing a diamond sintered body of the present embodiment is not particularly limited as long as it can obtain the desired pressure and temperature conditions.
- the high-pressure and high-temperature generator is preferably a belt-type high-pressure and high-temperature generator.
- the container for storing the mixed powder is not particularly limited as long as it is a high-pressure and high-temperature resistant material, and for example, tantalum (Ta), niobium (Nb) and the like are preferably used.
- the mixed powder is first placed in a capsule made of a refractory metal such as Ta or Nb, heated in a vacuum and sealed, and then the mixed powder is used. Remove adsorbed gas and air. After that, it is preferable to perform the step S31 for sintering the mixed powder described above and the step S32 for reducing dislocations in the diamond particles described later. For example, after the step S31 for sintering the mixed powder described above, it is preferable to carry out the step S32 for continuously reducing dislocations in the diamond particles as it is without taking out the mixed powder from the capsule made of refractory metal. ..
- the sintering pressure is preferably 4 GPa or more and less than 5 GPa, and more preferably 4.5 GPa or more and less than 5 GPa.
- the sintering temperature is preferably 1400 ° C. or higher and 1550 ° C. or lower, and more preferably 1450 ° C. or higher and 1550 ° C. or lower.
- the sintering time is preferably 15 minutes or more and 60 minutes or less, and more preferably 15 minutes or more and 20 minutes or less.
- step S32 for reducing dislocations in diamond particles the mixed powder is heated at a holding pressure of 6.5 GPa or more and 8 GPa or less and a holding temperature of 1600 ° C. or more and 1900 ° C. or less for a holding time of 50 minutes or more and 190 minutes or less. This reduces dislocations in the diamond particles.
- this step promotes the dissolution / reprecipitation reaction of diamond, the present inventors believe that a diamond sintered body having few dislocations can be obtained because the reprecipitated diamond particles have few dislocations.
- the holding pressure is preferably 6.5 GPa or more and 8 GPa or less, and more preferably 6.5 GPa or more and 7 GPa or less.
- the holding temperature is preferably 1600 ° C. or higher and 1900 ° C. or lower, and more preferably 1600 ° C. or higher and 1700 ° C. or lower.
- the holding time is preferably 50 minutes or more and 190 minutes or less, and more preferably 60 minutes or more and 180 minutes or less.
- the diamond sintered body obtained in the sintering step S3 is processed to form the shape of the cutting edge portion 20. Further, the cutting edge portion 20 is attached to the base material 10. In this way, the cutting insert 100 can be obtained.
- processing is performed on the flank surface 20b and the rake surface 20a of the cutting edge portion 20.
- processing with a reduced processing load is performed on the flank surface 20b or the rake surface 20a, which is the surface to be processed.
- the processing load is reduced, for example, low-power laser processing, polishing processing with a reduced processing load, or the like can be used.
- the dislocation density of the diamond particles on the flank surface 20b is 8 ⁇ 10 15 / m 2 or less, which is smaller than the conventional one. Therefore, the dislocation density of the diamond particles constituting the flank surface 20b is increased. The decrease in strength due to the above is suppressed. As a result, the wear resistance of the flank surface 20b is improved, so that the life of the cutting insert 100 is improved.
- the dislocation density in a part of the rake face 20a of the cutting insert 100 10 ⁇ 10 15 / m 2 or less
- the amount of crater wear on the rake face 20a can be reduced.
- the surface roughness Ra of the rake face 20a 120 nm or less
- the tool life can be further improved.
- the surface roughness Ra of the rake face 20a to 55 nm or less, the effect of improving the tool life can be further increased.
- Tables 1 and 2 show the conditions of the sample which is the cutting edge portion made of the diamond sintered body subjected to the cutting test. As shown in Table 1, samples 1 to 17 were provided for the cutting test.
- condition A1 is that the dislocation density in a part of the flank of each sample is 8 ⁇ 10 15 / m 2 or less.
- Condition A2 is that the dislocation density of the diamond sintered body on a part of the flank is 7 ⁇ 10 15 / m 2 or less.
- condition A3 is that the dislocation density of the diamond sintered body on a part of the flank is 6 ⁇ 10 15 / m 2 or less.
- Condition B1 is that the average particle size of the diamond particles in each sample is 0.1 ⁇ m or more and 50 ⁇ m or less.
- the condition C1 is that the content of diamond particles in each sample is 80% by volume or more and 99% by volume or less.
- the condition D1 is that the surface roughness Ra on a part of the rake face of each sample is 120 nm or less.
- the condition D2 is that the surface roughness Ra on a part of the rake face of each sample is 55 nm or less.
- the condition E1 is that the dislocation density in a part of the rake face of each sample is 10 ⁇ 10 15 / m 2 or less.
- the condition E2 is that the dislocation density in a part of the rake face is 6 ⁇ 10 15 / m 2 or less.
- Conditions A1 were satisfied in samples 1, 2, 4, 5, 6, 8 to 17.
- Conditions A2 were also satisfied in Samples 1, 4, 5, 8 to 17.
- Conditions A3 were also satisfied in Samples 1, 4, 5, 8 to 11.
- Conditions E1 were all satisfied in samples 1 to 17.
- Conditions E2 were also satisfied in Samples 1 to 3 and 8 to 17.
- Sample 13 did not meet condition B1.
- Samples 14 and 17 did not meet condition C1.
- Samples 10 and 11 did not satisfy the condition D1.
- ⁇ Test method> The first test method, the second test method, and the third test method were used for the cutting test.
- the first test method was used to evaluate Samples 1 to 7
- the second test method was used to evaluate Samples 8 to 11
- the third test method was used to evaluate Samples 12 to 17.
- Table 3 shows the details of the first test method, the second test method, and the third test method.
- Table 4 shows the results of the cutting test. As shown in Table 4, Samples 1, 2, 4-6, 8-12, 15, 16 showed a relatively long tool life. On the other hand, in Samples 3, 7, 13, 14, and 17, the cutting edge portion 20 was chipped at the initial stage of cutting (hereinafter referred to as "initial chipping").
- the conditions A1, the condition B1 and the condition C1 were satisfied in the samples 1, 2, 4 to 6, 8 to 12, 15 and 16, while the conditions A1 and the conditions A1 in the samples 3, 7, 13, 14 and 17 were satisfied.
- One of the condition B1 and the condition C1 was not satisfied. From this comparison, it was clarified that the tool life of the cutting insert 100 is improved by satisfying the three conditions A1, B1 and C1.
- the tool life of the sample 4 satisfying the condition D2 is longer than the tool life of the sample 5 satisfying the condition D1 but not satisfying the condition D2. From this comparison, it became clear that the tool life of the cutting insert 100 is further improved by further satisfying the condition D2.
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Abstract
Description
特許文献1のダイヤモンド焼結体は、切削工具等に適用すると、逃げ面の摩耗が進行し工具寿命が短くなる場合がある。本開示は、上記事情に鑑みてなされたものであり、工具寿命が改善された切削工具を提供することを目的とする。
[本開示の効果]
本開示によれば、工具寿命が改善された切削工具が得られる。
最初に本開示の実施態様を列記して説明する。
(3) 上記(1)または(2)の切削工具において、ダイヤモンド焼結体は結合材を含んでいてもよい。結合材は、単体金属、合金、及び金属間化合物からなる群より選ばれる少なくとも1種を含んでいてもよい。単体金属、合金及び金属間化合物は、周期表の第4族元素、周期表の第5族元素、周期表の第6族元素、鉄、アルミニウム、珪素、コバルト及びニッケルからなる群より選択された少なくとも1種の金属元素を含んでいてもよい。
(7) 上記(1)~(6)の切削工具において、すくい面の一部における転位密度は10×1015/m2以下であってもよい。
本開示の実施形態の詳細を、図面を参照しながら説明する。以下の図面においては、同一又は相当する部分に同一の参照符号を付し、重複する説明は繰り返さないものとする。
切削インサート100の構成を説明する。
図1は、切削インサート100の平面図である。図2は、切削インサート100の斜視図である。図3は、切削インサート100の刃先部20を示す拡大斜視模式図である。図4は、図3に示した刃先部20の拡大側面模式図である。
刃先部20は、ダイヤモンド粒子と、結合材とを含む焼結体により形成されている。異なる観点から言えば、刃先部20において、刃先稜線である切れ刃20cに隣接するすくい面20aの一部および逃げ面20bの一部はダイヤモンド粒子を含むダイヤモンド焼結体により構成される。
逃げ面20bの一部における転位密度は8×1015/m2以下である。逃げ面20bの一部におけるダイヤモンド焼結体(具体的にはダイヤモンド粒子)の転位密度は7×1015/m2以下であってもよい。すくい面20aの一部における転位密度は10×1015/m2以下であってもよい。逃げ面20bの一部における転位密度は、すくい面20aの一部における転位密度以下であってもよく、すくい面20bの一部における転位密度未満であってもよい。
装置条件:検出器NaI(適切なROIにより蛍光をカットする。)
エネルギー:18keV(波長:0.6888Å)
分光結晶:Si(111)
入射スリット:幅3mm×高さ0.5mm
受光スリット:ダブルスリット(幅3mm×高さ0.5mm)
ミラー:白金コート鏡
入射角:2.5mrad
走査方法:2θ-θscan
測定ピーク:ダイヤモンドの(111)、(220)、(311)、(331)、(422)、(440)、(531)の7本。ただし、集合組織、配向などによりプロファイルの取得が困難な場合は、その面指数のピークを除く。
C=Ch00[1-q(h2k2+h2l2+k2l2)/(h2+k2+l2)2] (II)
上記式(II)において、らせん転位と刃状転位におけるそれぞれのコントラストファクターCh00およびコントラストファクターに関する係数qは、計算コードANIZCを用い、すべり系が<110>{111}、弾性スティフネスC11が1076GPa、C12が125GPa、C44が576GPaとして求める。上記式(II)中、h、k及びlは、それぞれダイヤモンドのミラー指数(hkl)に相当する。コントラストファクターCh00は、らせん転位0.183であり、刃状転位0.204である。コントラストファクターに関する係数qは、らせん転位1.35であり、刃状転位0.30である。なお、らせん転位比率は0.5、刃状転位比率は0.5に固定する。
上記式(III)の関係と、Warren-Averbachの式より、下記式(IV)の様に表すことができ、修正Warren-Averbach法として、転位密度ρ及び結晶子サイズを求めることができる。下記式(IV)において、A(L)はフーリエ級数を示す。AS(L)は結晶子サイズに関するフーリエ級数を示す。Lはフーリエ長さを示す。
修正Williamson-Hall法及び修正Warren-Averbach法の詳細は、“T.Ungar and A.Borbely,“The effect of dislocation contrast on x-ray line broadening:A new approach to line profile analysis”Appl.Phys.Lett.,vol.69,no.21,p.3173,1996.”及び“T.Ungar,S.Ott,P.Sanders,A.Borbely,J.Weertman,“Dislocations,grain size and planar faults in nanostructured copper determined by high resolution X-ray diffraction and a new procedure of peak profile analysis”Acta Mater.,vol.46,no.10,pp.3693-3699,1998.”に記載されている。
本実施形態に係る切削工具は、図1から図4に示した切削インサート100と異なり、切削工具全体がダイヤモンド焼結体により構成されていてもよい。図5は、切削インサートとして用いられる刃先部20を示す斜視模式図である。図5に示す刃先部20は、全体がダイヤモンド焼結体により構成されるとともに、当該刃先部20自体が切削インサートとして利用される。異なる観点から言えば、図5に示した切削工具は、すくい面20aの全体および逃げ面20bの全体がダイヤモンド焼結体により構成されている。
本実施形態の切削工具としての切削インサート100を実現するためには、刃先部20となるべきダイヤモンド焼結体として、転位密度が十分低いダイヤモンド焼結体を得るとともに、当該ダイヤモンド焼結体に対して逃げ面20bまたはすくい面20aを形成するための加工工程において、ダイヤモンド焼結体に対する加工負荷を減らして転位密度が高くなることを避けるような加工を行う、といった対応が必要となる。以下、切削インサート100の製造方法の一例を説明する。図6は、切削インサート100の製造方法を示す工程図である。図6に示されるように、刃先部20を含む切削インサート100の製造方法は、刃先部20を構成している焼結体の製造工程である粉末準備工程S1、粉末混合工程S2および焼結工程S3と、逃げ面20bおよびすくい面20aに対する加工および刃先部20を基材10に固定する工程など含む加工工程S4と、を有している。
以下に、切削インサート100の効果を説明する。
切削インサート100の効果を確認するために行った切削試験を説明する。
表1および表2には、切削試験に供されたダイヤモンド焼結体からなる刃先部であるサンプルの条件が示されている。表1に示されるように、切削試験には、サンプル1~サンプル17が供された。
切削試験には、第1試験方法、第2試験方法及び第3試験方法が用いられた。第1試験方法はサンプル1~サンプル7の評価に用いられ、第2試験方法はサンプル8~サンプル11の評価に用いられ、第3試験方法はサンプル12~サンプル17の評価に用いられた。表3には、第1試験方法、第2試験方法及び第3試験方法の詳細が示されている。
表4には、切削試験の結果が示されている。表4に示されるように、サンプル1、2、4~6、8~12、15、16は、相対的に長い工具寿命を示した。他方で、サンプル3、7、13、14、17では、切削加工の開始初期に刃先部20に欠けが生じた(以下「初期欠け」という)。
Claims (9)
- すくい面と、逃げ面と、前記すくい面および前記逃げ面を繋ぐ刃先稜線とを有する切削工具であって、
前記刃先稜線に隣接する前記すくい面の一部および前記逃げ面の一部はダイヤモンド粒子を含むダイヤモンド焼結体により構成され、
前記逃げ面の一部における転位密度は8×1015/m2以下であり、
前記ダイヤモンド粒子の平均粒径は0.1μm以上50μm以下であり、
前記ダイヤモンド焼結体における前記ダイヤモンド粒子の含有率は80体積パーセント以上99体積パーセント以下である、切削工具。 - 前記逃げ面の一部における前記ダイヤモンド焼結体の前記転位密度は7×1015/m2以下である、請求項1に記載の切削工具。
- 前記ダイヤモンド焼結体は結合材を含み、
前記結合材は、単体金属、合金、及び金属間化合物からなる群より選ばれる少なくとも1種を含み、
前記単体金属、前記合金及び前記金属間化合物は、周期表の第4族元素、周期表の第5族元素、周期表の第6族元素、鉄、アルミニウム、珪素、コバルト及びニッケルからなる群より選択された少なくとも1種の金属元素を含む、請求項1または請求項2に記載の切削工具。 - 前記ダイヤモンド焼結体は結合材を含み、
前記結合材は、化合物、及び、前記化合物由来の固溶体からなる群より選ばれる少なくとも1種を含み、
前記化合物は、単体金属、合金及び金属間化合物からなる群から選択された少なくとも1種と、窒素、炭素及び酸素からなる群から選択される少なくとも1種とからなり、
前記単体金属、前記合金及び前記金属間化合物は、周期表の第4族元素、周期表の第5族元素、周期表の第6族元素、鉄、アルミニウム、珪素、コバルト及びニッケルからなる群より選択された少なくとも1種の金属元素を含む、請求項1または請求項2に記載の切削工具。 - 前記結合材がコバルトを含む、請求項3または請求項4に記載の切削工具。
- 前記すくい面の一部における表面粗さRaは、120nm以下である、請求項1から請求項5のいずれか1項に記載の切削工具。
- 前記すくい面の一部における転位密度は10×1015/m2以下である、請求項1から請求項6のいずれか1項に記載の切削工具。
- 前記ダイヤモンド焼結体を保持する基材を備える、請求項1から請求項7のいずれか1項に記載の切削工具。
- 前記すくい面の全体および前記逃げ面の全体が前記ダイヤモンド焼結体により構成されている、請求項1から請求項7のいずれか1項に記載の切削工具。
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JP2005239472A (ja) | 2004-02-25 | 2005-09-08 | Sumitomo Electric Ind Ltd | 高強度・高耐摩耗性ダイヤモンド焼結体およびその製造方法 |
JP2016097452A (ja) * | 2014-11-18 | 2016-05-30 | 三菱マテリアル株式会社 | エンドミル |
JP2020198392A (ja) | 2019-06-04 | 2020-12-10 | 東京エレクトロン株式会社 | 基板加工装置、および基板加工方法 |
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JP3874874B2 (ja) * | 1997-01-29 | 2007-01-31 | 豊田バンモップス株式会社 | 超砥粒焼結体製刃先チップを有する切削工具及びその製造方法 |
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JP2016097452A (ja) * | 2014-11-18 | 2016-05-30 | 三菱マテリアル株式会社 | エンドミル |
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T. UNGARA. BORBELY: "The effect of dislocation contrast on x-ray line broadening: A new approach to line profile analysis", APPL. PHYS. LETT., vol. 69, no. 21, 1996, pages 3173, XP012016627, DOI: 10.1063/1.117951 |
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JPWO2022114191A1 (ja) | 2022-06-02 |
KR20230110525A (ko) | 2023-07-24 |
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CN116568433A (zh) | 2023-08-08 |
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