WO2022113986A1 - Composition de polissage pour tranches de silicium et son utilisation - Google Patents

Composition de polissage pour tranches de silicium et son utilisation Download PDF

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Publication number
WO2022113986A1
WO2022113986A1 PCT/JP2021/042940 JP2021042940W WO2022113986A1 WO 2022113986 A1 WO2022113986 A1 WO 2022113986A1 JP 2021042940 W JP2021042940 W JP 2021042940W WO 2022113986 A1 WO2022113986 A1 WO 2022113986A1
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Prior art keywords
polishing
weight
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polishing composition
surfactant
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PCT/JP2021/042940
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English (en)
Japanese (ja)
Inventor
修 後藤
大輝 ▲高▼間
公亮 土屋
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株式会社フジミインコーポレーテッド
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Priority to JP2022565362A priority Critical patent/JPWO2022113986A1/ja
Publication of WO2022113986A1 publication Critical patent/WO2022113986A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a silicon wafer polishing composition and a method for polishing a silicon wafer using the polishing composition.
  • polishing step typically includes a pre-polishing step (pre-polishing step) and a finishing polishing step (final polishing step).
  • the polishing composition one having a polishing ability to efficiently polish the object to be polished is used.
  • a chemical polishing action alkali etching
  • a basic compound is used for polishing a semiconductor substrate or other substrate such as the above-mentioned silicon wafer.
  • Abrasive grains are used for the polishing, if necessary, and higher processing force can be exhibited based on the mechanical polishing action of the abrasive grains in addition to the chemical polishing action.
  • the polishing composition used for polishing the substrate is required to have the ability to realize a high quality surface after polishing.
  • the improvement of the surface quality of the polished surface is realized by a method such as impregnating an additive such as a surfactant in the polishing composition and protecting the substrate with the above-mentioned additive.
  • an additive such as a surfactant in the polishing composition
  • Patent Document 1 can be mentioned.
  • the use of the above-mentioned additives may lead to a decrease in processing power, and it is not easy to achieve both the quality of the polished surface and the polishing rate.
  • polishing components are being studied from various viewpoints. For example, as described above, the quality improvement of the polished surface and the polishing rate, which are generally considered to be in a trade-off relationship, are balanced. Studies are being conducted on compositions that are compatible with each other.
  • the present invention was created based on the above background, and an object of the present invention is to provide a novel composition suitable for polishing.
  • a polishing composition for a silicon wafer contains a basic compound, a surfactant, and water.
  • the surfactant is an acetylene glycol-type compound having one acetylene group in one molecule, and is a compound to which an alkylene oxide is further added.
  • the action of a surfactant having a specific structure having one acetylene group in one molecule and further having an alkylene oxide allows the basic compound to exert a good chemical polishing action while polishing.
  • the surface quality of the surface can be maintained or improved. That is, a composition suitable for polishing is provided.
  • the compound represented by the following formula (1) as the surfactant, it is easy to achieve a good balance between a high quality polished surface and a polishing rate.
  • R 1 to R 4 are independent hydrogen atoms or substituted or unsubstituted alkyl groups having 1 to 20 carbon atoms, respectively, and R 5 and R 6 independently have 1 to 5 carbon atoms. Is a substituted or unsubstituted alkylene group of, m is an integer of 1 or more, n is an integer of 0 or more, and m + n ⁇ 50 is satisfied.
  • the polishing composition further comprises abrasive grains.
  • the polishing rate can be improved based on the mechanical polishing action due to the inclusion of the abrasive grains.
  • the polishing rate can be improved while maintaining or improving the surface quality after polishing.
  • Silica particles are preferably used as the abrasive grains. By using silica particles as the abrasive grains, it is easy to achieve a good balance between a high-quality polished surface and a polishing rate.
  • the effect of including the surfactant having the specific structure is suitably realized in the polishing composition containing silica particles as abrasive grains.
  • the polishing composition further comprises a water-soluble polymer.
  • a high-quality polished surface is preferably realized by a composition containing the surfactant having the specific structure and the water-soluble polymer.
  • the pH of the polishing composition is 8.0 or more and 12.0 or less. In a composition having a pH in the above range, the effects of the techniques disclosed herein can be preferably exerted.
  • the polishing method includes a polishing step.
  • a silicon wafer is polished using a composition for polishing a silicon wafer containing a surfactant having the specific structure, a basic compound, and water.
  • the polishing method comprises a pre-polishing step and a finishing polishing step. Then, in the finish polishing step, polishing using the polishing composition disclosed herein is carried out. According to such a polishing method, a higher quality silicon wafer surface can be efficiently obtained in the finish polishing step.
  • the polishing composition disclosed herein is an acetylene glycol-type compound having one acetylene group in one molecule, and is a compound to which an alkylene oxide is further added (hereinafter, "surfactant" for convenience). Also referred to as “agent A”). According to the polishing using the polishing composition containing the surfactant A having the specific structure, the chemical polishing action of the basic compound described later is satisfactorily exhibited, and the surface quality of the polished surface is maintained or improved. Can be done.
  • the surfactant A having the specific structure has an acetylene structure and an alkylene oxide structure at the same time, so that the surface of the substrate is suitably protected without excessively suppressing alkaline etching by the basic compound. Be done.
  • the action of the surfactant A is not limited to the above action.
  • the nonionic surfactant A is more preferable from the viewpoint of improving the surface quality.
  • Surfactant A can be used alone or in combination of two or more.
  • surfactant A examples include a compound represented by the following general formula (1).
  • R 1 to R 4 are independently substituted or unsubstituted alkyl groups having a hydrogen atom or 1 to 20 carbon atoms.
  • the number of carbon atoms of the alkyl group to be R 1 to R 4 may be 1 or more, 2 or more, 3 or more, 20 or less, 18 or less, 16 or less, 12 or less. It may be less than or equal to, 10 or less, 8 or less, or 5 or less.
  • alkyl group examples include methyl group, ethyl group, propyl group, iso-propyl group, butyl group, iso-butyl group, sec-butyl group, tert-butyl group, pentyl group, iso-pentyl group and neo-.
  • examples thereof include a pentyl group, a tert-pentyl group, a hexyl group, an octyl group, a nonyl group, a decyl group, a lauryl group, a myristyl group, a palmityl group and a stearyl group.
  • R 1 to R 4 may be the same or different.
  • R 5 and R 6 are independently substituted or unsubstituted alkylene groups having 1 to 5 carbon atoms.
  • the number of carbon atoms of the alkylene groups to be R5 and R6 may be 1 or more, 2 or more, 3 or more, 4 or less, or 3 or less.
  • Specific examples of the alkylene group include an ethylene group, a propylene group, a butylene group, a pentylene group and the like.
  • R5 and R6 may be the same or different.
  • m is an integer of 1 or more
  • n is an integer of 0 or more
  • m + n ⁇ 50 is satisfied.
  • m + n may be 1 or more, 3 or more, 5 or more, 10 or more, 15 or more, 20 or more, 50 or less, 30 or less. It may be 22 or less, 16 or less, 12 or less, 8 or less, or 4 or less (for example, 3 or less).
  • m and n may be the same or different.
  • the surfactant A one having an appropriate molecular weight that exerts its action in the polishing composition is used, and the surfactant A is not limited to a specific molecular weight.
  • the molecular weight of the surfactant A is typically 250 or more, for example 300 or more, preferably 400 or more, more preferably 500 or more, 700 or more, 1200 or more, or 1500 or more. good.
  • the upper limit of the molecular weight is, for example, 3000 or less, 2000 or less is appropriate, and may be 1400 or less, 1000 or less, or 600 or less.
  • the molecular weight of the surfactant A the molecular weight calculated from the chemical formula is adopted.
  • the content of the surfactant A in the polishing composition can be, for example, 1.0 ⁇ 10-6 % by weight or more from the viewpoint of exhibiting the effect of adding the surfactant A, and the surface quality after polishing can be improved. From the viewpoint, it is preferably 5.0 ⁇ 10 -6 % by weight or more, more preferably 1.0 ⁇ 10 -5 % by weight or more, still more preferably 5.0 ⁇ 10 -5 % by weight or more, and particularly preferably 1.0. ⁇ 10 -4 % by weight or more. Further, the content of the surfactant A in the polishing composition is preferably less than 0.2% by weight, preferably less than 0.1% by weight, from the viewpoint of cleanability and the like.
  • the content of the surfactant A when two or more kinds of surfactants are contained, the total amount thereof is highly water-soluble. It can also be identified by its relative relationship with the molecule.
  • the content of the water-soluble polymer with respect to 100 parts by weight of the water-soluble polymer can be, for example, 0.01 part by weight or more, from the viewpoint of haze reduction and the like. It is suitable to be 0.1 part by weight or more, preferably 0.5 part by weight or more, and more preferably 1 part by weight or more.
  • the content of the surfactant A with respect to 100 parts by weight of the water-soluble polymer may be, for example, 50 parts by weight or less, or 30 parts by weight or less.
  • the content of the surfactant A with respect to 100 parts by weight of the water-soluble polymer is preferably 15 parts by weight or less, preferably 15 parts by weight or less. It may be 10 parts by weight or less, 8 parts by weight or less, or 7 parts by weight or less.
  • the polishing composition disclosed herein contains a basic compound.
  • the term "basic compound” refers to a compound having a function of dissolving in water and raising the pH of an aqueous solution. By including the basic compound in the polishing composition, the object to be polished can be efficiently polished by its chemical polishing action (alkali etching).
  • the basic compound include organic or inorganic basic compounds containing nitrogen, basic compounds containing phosphorus, alkali metal hydroxides, alkaline earth metal hydroxides, and various carbonates and hydrogen carbonates. Can be used.
  • nitrogen-containing basic compounds include quaternary ammonium compounds, ammonia, amines (preferably water-soluble amines) and the like.
  • Examples of phosphorus-containing basic compounds include quaternary phosphonium compounds. Such basic compounds may be used alone or in combination of two or more.
  • alkali metal hydroxides include potassium hydroxide, sodium hydroxide and the like.
  • specific examples of the carbonate or hydrogen carbonate include ammonium hydrogencarbonate, ammonium carbonate, potassium hydrogencarbonate, potassium carbonate, sodium hydrogencarbonate, sodium carbonate and the like.
  • Specific examples of amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- ( ⁇ -aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, and anhydrous piperazine.
  • quaternary phosphonium compound include quaternary phosphonium hydroxides such as tetramethylphosphonium hydroxide and tetraethylphosphonium hydroxide.
  • quaternary ammonium salt typically a strong base
  • a quaternary ammonium salt such as a tetraalkylammonium salt or a hydroxyalkyltrialkylammonium salt
  • the anionic component in such a quaternary ammonium salt can be, for example, OH ⁇ , F ⁇ , Cl ⁇ , Br ⁇ , I ⁇ , ClO 4- , BH 4- and the like.
  • examples of the quaternary ammonium compound include a quaternary ammonium salt having an anion of OH ⁇ , that is, a quaternary ammonium hydroxide.
  • quaternary ammonium hydroxide examples include hydroxylation of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide and tetrahexylammonium hydroxide.
  • At least one basic compound selected from alkali metal hydroxides, quaternary ammonium hydroxide and ammonia can be preferably used.
  • tetraalkylammonium hydroxide for example, tetramethylammonium hydroxide
  • ammonia is particularly preferable.
  • the content of the basic compound in the polishing composition is not particularly limited. From the viewpoint of improving the polishing rate, it is usually appropriate to set the above content to 0.0005% by weight or more, preferably 0.001% by weight or more, and 0.003% by weight or more. Is even more preferable. Further, from the viewpoint of improving surface quality (for example, reducing haze), the content is preferably less than 0.1% by weight, preferably less than 0.05% by weight, and 0.03% by weight. More preferably, it is less than% (eg, less than 0.025% by weight, even less than 0.01% by weight). When two or more kinds are used in combination, the above-mentioned content refers to the total content of two or more kinds of basic compounds. These contents can be preferably applied to the content in the polishing liquid (working slurry) supplied to the substrate, for example.
  • the polishing composition disclosed herein preferably contains the surfactant A and the basic compound in an appropriate ratio.
  • the ratio of the content C B of the basic compound to the content CA of the surfactant A is, for example, 0.01 or more, which is preferable from the viewpoint of exhibiting the effect of adding the basic compound. Is 0.1 or more, more preferably 0.3 or more, still more preferably 0.8 or more, and may be 1 or more, or 3 or more.
  • the above ratio ( CB / CA ) can be 100 or less, and is preferably 70 or less, more preferably 60 or less, for example, from the viewpoint of better exerting the effect of adding the surfactant A. It may be 50 or less, or 40 or less.
  • ion-exchanged water deionized water
  • pure water ultrapure water
  • distilled water distilled water
  • the water used preferably has, for example, a total content of transition metal ions of 100 ppb or less in order to avoid hindering the action of other components contained in the polishing composition as much as possible.
  • the purity of water can be increased by operations such as removal of impurity ions by an ion exchange resin, removal of foreign substances by a filter, and distillation.
  • the polishing composition disclosed herein may further contain an organic solvent (lower alcohol, lower ketone, etc.) that can be uniformly mixed with water, if necessary. It is preferable that 90% by volume or more of the solvent contained in the polishing composition is water, and more preferably 95% by volume or more (for example, 99 to 100% by volume) is water.
  • the polishing composition disclosed herein may or may not contain abrasive grains.
  • the polishing composition comprises abrasive grains.
  • Abrasive grains serve to mechanically polish the surface of the substrate. By including the abrasive grains in the polishing composition, the polishing rate can be improved based on the mechanical polishing action due to the inclusion of the abrasive grains.
  • the material and properties of the abrasive grains are not particularly limited, and can be appropriately selected depending on the purpose and mode of use of the polishing composition. Examples of abrasive grains include inorganic particles, organic particles, and organic-inorganic composite particles.
  • the inorganic particles include silica particles, alumina particles, cerium oxide particles, chromium oxide particles, titanium dioxide particles, zirconium oxide particles, magnesium oxide particles, manganese dioxide particles, zinc oxide particles, and oxide particles such as red iron oxide particles; Nitride particles such as silicon nitride particles and boron nitride particles; carbide particles such as silicon carbide particles and boron carbide particles; diamond particles; carbonates such as calcium carbonate and barium carbonate can be mentioned.
  • the organic particles include polymethylmethacrylate (PMMA) particles and poly (meth) acrylic acid particles (here, (meth) acrylic acid means to comprehensively refer to acrylic acid and methacrylic acid). , Polyacrylonitrile particles and the like. Such abrasive grains may be used alone or in combination of two or more.
  • abrasive grains inorganic particles are preferable, particles made of a metal or metalloid oxide are preferable, and silica particles are particularly preferable.
  • a polishing composition that can be used for polishing a substrate having a surface made of silicon (for example, finish polishing) such as a silicon wafer described later, it is particularly meaningful to use silica particles as abrasive grains.
  • the technique disclosed herein can be preferably carried out, for example, in an embodiment in which the abrasive grains are substantially composed of silica particles.
  • substantially means 95% by weight or more (preferably 98% by weight or more, more preferably 99% by weight or more, and may be 100% by weight) of the particles constituting the abrasive grains. It means that it is a silica particle.
  • silica particles include colloidal silica, fumed silica, and precipitated silica.
  • the silica particles may be used alone or in combination of two or more.
  • the use of colloidal silica is particularly preferable because it is easy to obtain a polished surface having excellent surface quality after polishing.
  • colloidal silica for example, colloidal silica produced from water glass (Na silicate) by an ion exchange method or colloidal silica produced by an alkoxide method (coroidal silica produced by a hydrolysis condensation reaction of alkoxysilane) is preferably adopted. be able to.
  • Colloidal silica can be used alone or in combination of two or more.
  • the true specific gravity of the abrasive grain constituent material is preferably 1.5 or more, more preferably 1.6 or more, still more preferably 1.7 or more.
  • the upper limit of the true specific gravity of silica is not particularly limited, but is typically 2.3 or less, preferably 2.2 or less, still more preferably 2.0 or less, and for example, 1.9 or less.
  • a measured value by a liquid replacement method using ethanol as a replacement liquid can be adopted.
  • the average primary particle diameter of the abrasive grains is not particularly limited, but is preferably 5 nm or more, more preferably 10 nm or more from the viewpoint of polishing rate and the like. From the viewpoint of obtaining a higher polishing effect (for example, effects such as reduction of haze and removal of defects), the average primary particle diameter is preferably 15 nm or more, and more preferably 20 nm or more (for example, more than 20 nm). Further, from the viewpoint of scratch prevention and the like, the average primary particle diameter of the abrasive grains is preferably 100 nm or less, more preferably 50 nm or less, still more preferably 45 nm or less.
  • the average primary particle size of the abrasive grains may be 43 nm or less, less than 40 nm, less than 38 nm, less than 35 nm, less than 32 nm, from the viewpoint of facilitating a lower haze surface. It may be less than 30 nm.
  • the specific surface area can be measured using, for example, a surface area measuring device manufactured by Micromeritex, trade name "Flow Sorb II 2300".
  • the average secondary particle diameter of the abrasive grains is not particularly limited, and can be appropriately selected from the range of, for example, about 15 nm to 300 nm. From the viewpoint of improving the polishing rate, the average secondary particle diameter is preferably 30 nm or more, and more preferably 35 nm or more. In some embodiments, the average secondary particle size may be, for example, 40 nm or more, 42 nm or more, and preferably 44 nm or more. Further, the average secondary particle diameter is usually preferably 250 nm or less, preferably 200 nm or less, and more preferably 150 nm or less. In some preferred embodiments, the average secondary particle diameter is 120 nm or less, more preferably 100 nm or less, still more preferably 70 nm or less, for example 60 nm or less, or 50 nm or less.
  • the average secondary particle diameter means the particle diameter (volume average particle diameter) measured by the dynamic light scattering method.
  • the average secondary particle diameter of the abrasive grains can be measured, for example, by a dynamic light scattering method using "Nanotrack (registered trademark) UPA-UT151” manufactured by Nikkiso Co., Ltd.
  • the shape (outer shape) of the abrasive grains may be spherical or non-spherical.
  • the non-spherical particles include a peanut shape (that is, a peanut shell shape), a cocoon shape, a konpeito shape, a rugby ball shape, and the like.
  • abrasive grains in which many of the particles are peanut-shaped or cocoon-shaped can be preferably adopted.
  • the average value (average aspect ratio) of the major axis / minor axis ratio of the abrasive grains is, in principle, 1.0 or more, preferably 1.05 or more, and more preferably 1.1 or more. Is. Higher polishing rates can be achieved by increasing the average aspect ratio.
  • the average aspect ratio of the abrasive grains is preferably 3.0 or less, more preferably 2.0 or less, still more preferably 1.5 or less, from the viewpoint of scratch reduction and the like.
  • the shape (outer shape) and average aspect ratio of the abrasive grains can be grasped by, for example, observing with an electron microscope.
  • a specific procedure for grasping the average aspect ratio for example, for a predetermined number (for example, 200) of abrasive particles that can recognize the shape of independent particles using a scanning electron microscope (SEM), each particle is used.
  • the value obtained by dividing the length of the long side (value of the major axis) by the length of the short side (value of the minor axis) is the major axis / minor axis ratio (aspect ratio).
  • the average aspect ratio can be obtained by arithmetically averaging the aspect ratios of the predetermined number of particles.
  • the content of the abrasive grains in the polishing composition is not particularly limited, and is, for example, 0.01% by weight or more, preferably 0.05% by weight or more, more preferably. It is preferably 0.10% by weight or more, more preferably 0.15% by weight or more. Higher polishing rates can be achieved by increasing the abrasive grain content.
  • the content is preferably 10% by weight or less, preferably 7% by weight or less, more preferably 5% by weight or less, still more preferably 2% by weight or less, and may be, for example, 1% by weight or less. It may be 0.5% by weight or less, or 0.4% by weight or less. As a result, a higher quality surface can be realized.
  • the above-mentioned abrasive grain content can be preferably adopted in an embodiment in which the polishing composition is used in the form of a polishing liquid (working slurry).
  • the polishing composition disclosed herein may contain a water-soluble polymer.
  • the water-soluble polymer can be useful for protecting the surface of the substrate, improving the wettability of the surface of the substrate after polishing, and the like.
  • the water-soluble polymer is a compound containing a hydroxyl group, a carboxy group, an acyloxy group, a sulfo group, an amide structure, an imide structure, a quaternary ammonium structure, a heterocyclic structure, a vinyl structure, or the like. Can be mentioned.
  • the water-soluble polymer for example, a cellulose derivative, a starch derivative, a polymer containing an oxyalkylene unit, a polyvinyl alcohol-based polymer, a polymer containing a nitrogen atom, or the like is used, and as one embodiment of the polymer containing a nitrogen atom, N- Vinyl type polymers, N- (meth) acryloyl type polymers and the like can be used.
  • the water-soluble polymer may be a polymer derived from a natural product or a synthetic polymer. As the water-soluble polymer, one type may be used alone, or two or more types may be used in combination.
  • a polymer derived from a natural product is used as the water-soluble polymer.
  • examples of polymers derived from natural products include cellulose derivatives and starch derivatives.
  • the polymer derived from a natural product one kind may be used alone, or two or more kinds may be used in combination.
  • a cellulose derivative is used as the water-soluble polymer.
  • the cellulose derivative is a polymer containing ⁇ -glucose unit as a main repeating unit.
  • Specific examples of the cellulose derivative include hydroxyethyl cellulose (HEC), hydroxypropyl cellulose, hydroxyethyl methyl cellulose, hydroxypropylmethyl cellulose, methyl cellulose, ethyl cellulose, ethyl hydroxyethyl cellulose, carboxymethyl cellulose and the like. Among them, HEC is preferable.
  • HEC hydroxyethyl cellulose
  • one type may be used alone, or two or more types may be used in combination.
  • the starch derivative is used as the water-soluble polymer.
  • the starch derivative is a polymer containing an ⁇ -glucose unit as a main repeating unit, and examples thereof include pregelatinized starch, pullulan, carboxymethyl starch, and cyclodextrin.
  • pregelatinized starch pullulan
  • carboxymethyl starch and cyclodextrin.
  • the starch derivative one type may be used alone, or two or more types may be used in combination.
  • synthetic polymers are used as water-soluble polymers.
  • the effects of the techniques disclosed herein are preferably exhibited in embodiments where synthetic polymers are used as the water-soluble polymers.
  • synthetic polymer one kind may be used alone, or two or more kinds may be used in combination.
  • a polymer containing an oxyalkylene unit is used as the water-soluble polymer.
  • Polymers containing oxyalkylene units include polyethylene oxide (PEO), block copolymers of ethylene oxide (EO) and propylene oxide (PO) or butylene oxide (BO), and random copolymers of EO and PO or BO. Etc. are exemplified. Among them, a block copolymer of EO and PO or a random copolymer of EO and PO is preferable.
  • the block copolymer of EO and PO can be a diblock copolymer containing a PEO block and a polypropylene oxide (PPO) block, a triblock copolymer, or the like.
  • Examples of the above-mentioned triblock copolymers include PEO-PPO-PEO type triblock copolymers and PPO-PEO-PPO type triblock copolymers. Usually, PEO-PPO-PEO type triblock copolymer is more preferable.
  • copolymer in the present specification comprehensively refers to various copolymers such as random copolymers, alternate copolymers, block copolymers, and graft copolymers. be.
  • the molar ratio (EO / PO) of EO and PO constituting the copolymer is determined from the viewpoint of solubility in water, cleanability, and the like. It is preferably larger than 1, more preferably 2 or more, and even more preferably 3 or more (for example, 5 or more).
  • a polyvinyl alcohol-based polymer is used as the water-soluble polymer. According to the composition containing a polyvinyl alcohol-based polymer, it is easy to improve the polishing rate while maintaining the surface quality after polishing.
  • the polyvinyl alcohol-based polymer refers to a polymer containing a vinyl alcohol unit (hereinafter, also referred to as “VA unit”) as a repeating unit thereof.
  • VA unit vinyl alcohol unit
  • the polyvinyl alcohol-based polymer may contain only VA units as repeating units, and may contain repeating units other than VA units (hereinafter, also referred to as “non-VA units”) in addition to VA units.
  • the polyvinyl alcohol-based polymer may be a random copolymer containing VA units and non-VA units, may be a block copolymer, or may be an alternating copolymer or a graft copolymer.
  • the polyvinyl alcohol-based polymer may contain only one type of non-VA unit, or may contain two or more types of non-VA units.
  • the polyvinyl alcohol-based polymer may be unmodified polyvinyl alcohol (non-modified PVA) or modified polyvinyl alcohol (modified PVA).
  • the non-denatured PVA is produced by hydrolyzing (saponifying) polyvinyl acetate, and is other than the repeating unit (-CH 2 -CH (OCOCH 3 )-) and the VA unit having a vinyl acetate-polymerized structure.
  • the saponification degree of the non-modified PVA may be, for example, 60% or more, 70% or more, 80% or more, or 90% or more from the viewpoint of water solubility.
  • the polyvinyl alcohol-based polymer has a VA unit, an oxyalkylene group, a carboxy group, a (di) carboxylic acid group, a (di) carboxylic acid ester, a phenyl group, a naphthyl group, a sulfo group, an amino group, a hydroxyl group, an amide group, and an imide group.
  • the non-VA unit that can be contained in the modified PVA is, for example, a repeating unit derived from an N-vinyl type monomer or an N- (meth) acryloyl type monomer, which will be described later, a repeating unit derived from ethylene, and an alkyl vinyl ether. It may be a repeating unit to be used, a repeating unit derived from a vinyl ester of a monocarboxylic acid having 3 or more carbon atoms, and the like, but the present invention is not limited thereto.
  • a preferable example of the above-mentioned N-vinyl type monomer is N-vinylpyrrolidone.
  • N- (meth) acryloyl type monomer is N- (meth) acryloyl morpholine.
  • the alkyl vinyl ether may be a vinyl ether having an alkyl group having 1 or more and 10 or less carbon atoms, such as propyl vinyl ether, butyl vinyl ether, and 2-ethylhexyl vinyl ether.
  • the vinyl ester of a monocarboxylic acid having 3 or more carbon atoms is a vinyl ester of a monocarboxylic acid having 3 or more carbon atoms and 7 or less carbon atoms, such as vinyl propanoate, vinyl butanoate, vinyl pentanate, vinyl hexanoate and the like. obtain.
  • the polyvinyl alcohol-based polymer may be an acetalized polyvinyl alcohol-based polymer.
  • the acetalized polyvinyl alcohol-based polymer include modified PVA in which a part of the VA unit contained in the polyvinyl alcohol-based polymer is acetalized with an aldehyde.
  • an aldehyde for example, an alkyl aldehyde can be preferably used, and an alkyl aldehyde having an alkyl group having 1 or more and 7 or less carbon atoms is preferable, and acetaldehyde, n-propyl aldehyde, n-butyl aldehyde, and n-pentyl aldehyde are particularly preferable. Is preferable.
  • a cationically modified polyvinyl alcohol having a cationic group such as a quaternary ammonium structure introduced may be used.
  • a cationic group derived from a monomer having a cationic group such as a diallyldialkylammonium salt or an N- (meth) acryloylaminoalkyl-N, N, N-trialkylammonium salt is introduced. The ones that have been done are listed.
  • the non-VA unit is represented by the chemical formula: -CH 2 -CH (CR (1) (OR (4) )-CR ( 2) (OR (5) )-R (3) )-. It may have a structural portion.
  • R (1) to R (3) independently indicate a hydrogen atom or an organic group
  • R (4) and R (5) independently indicate a hydrogen atom or R (6) -CO- (, respectively.
  • R (6) indicates an alkyl group).
  • modified PVA include modified PVA having a 1,2-diol structure in the side chain.
  • the ratio of the number of moles of VA units to the number of moles of all repeating units constituting the polyvinyl alcohol polymer may be, for example, 5% or more, 10% or more, 20% or more, or 30% or more. ..
  • the proportion of the number of moles of the VA unit may be 50% or more, 65% or more, 75% or more, or 80% or more. It may be 90% or more (for example, 95% or more, or 98% or more).
  • Substantially 100% of the repeating units constituting the polyvinyl alcohol-based polymer may be VA units.
  • substantially 100% means that the polyvinyl alcohol-based polymer does not contain non-VA units at least intentionally, and typically the number of moles of non-VA units in the number of moles of all repeating units.
  • the ratio of is less than 2% (for example, less than 1%), and includes the case where it is 0%.
  • the ratio of the number of moles of VA units to the number of moles of all repeating units constituting the polyvinyl alcohol polymer may be, for example, 95% or less, 90% or less, or 80% or less. However, it may be 70% or less.
  • the content of VA units (content based on weight) in the polyvinyl alcohol-based polymer may be, for example, 5% by weight or more, 10% by weight or more, 20% by weight or more, or 30% by weight or more.
  • the content of the VA unit may be 50% by weight or more (for example, more than 50% by weight), 70% by weight or more, or 80% by weight or more (for example, more than 50% by weight).
  • 90% by weight or more, 95% by weight or more, or 98% by weight or more) may be used.
  • Substantially 100% by weight of the repeating units constituting the polyvinyl alcohol-based polymer may be VA units.
  • substantially 100% by weight means that the non-VA unit is not contained as a repeating unit constituting the polyvinyl alcohol-based polymer at least intentionally, and typically, the non-VA unit in the polyvinyl alcohol-based polymer is not contained. It means that the content of is less than 2% by weight (for example, less than 1% by weight). In some other embodiments, the content of VA units in the polyvinyl alcohol polymer may be, for example, 95% by weight or less, 90% by weight or less, 80% by weight or less, or 70% by weight or less. ..
  • the polyvinyl alcohol-based polymer may contain a plurality of polymer chains having different contents of VA units in the same molecule.
  • the polymer chain refers to a portion (segment) constituting a part of a single molecule polymer.
  • polyvinyl alcohol-based polymers have a polymer chain A with a VA unit content of more than 50% by weight and a VA unit content of less than 50% by weight (ie, a non-VA unit content of more than 50% by weight).
  • Polymer chain B may be contained in the same molecule.
  • the polymer chain A may contain only VA units as repeating units, and may contain non-VA units in addition to VA units.
  • the content of VA units in the polymer chain A may be 60% by weight or more, 70% by weight or more, 80% by weight or more, or 90% by weight or more. In some embodiments, the content of VA units in the polymer chain A may be 95% by weight or more, or 98% by weight or more. Substantially 100% by weight of the repeating units constituting the polymer chain A may be VA units.
  • the polymer chain B may contain only non-VA units as repeating units, and may contain VA units in addition to non-VA units.
  • the content of the non-VA unit in the polymer chain B may be 60% by weight or more, 70% by weight or more, 80% by weight or more, or 90% by weight or more. In some embodiments, the content of non-VA units in the polymer chain B may be 95% by weight or more, or 98% by weight or more. Substantially 100% by weight of the repeating units constituting the polymer chain B may be non-VA units.
  • polyvinyl alcohol-based polymers containing the polymer chains A and the polymer chains B in the same molecule include block copolymers and graft copolymers containing these polymer chains.
  • the graft copolymer may be a graft copolymer having a structure in which a polymer chain B (side chain) is grafted on a polymer chain A (main chain), or a polymer chain A (side chain) on a polymer chain B (main chain). It may be a graft copolymer having a structure in which the chain) is grafted.
  • a polyvinyl alcohol-based polymer having a structure in which the polymer chain B is grafted to the polymer chain A can be used.
  • Examples of the polymer chain B include a polymer chain having a repeating unit derived from an N-vinyl type monomer as a main repeating unit, and a polymer chain having a repeating unit derived from an N- (meth) acryloyl type monomer as a main repeating unit.
  • Examples thereof include a polymer chain and a polymer chain having an oxyalkylene unit as a main repeating unit.
  • the main repeating unit means a repeating unit contained in excess of 50% by weight, unless otherwise specified.
  • a preferred example of the polymer chain B is a polymer chain having an N-vinyl type monomer as a main repeating unit, that is, an N-vinyl-based polymer chain.
  • the content of the repeating unit derived from the N-vinyl type monomer in the N-vinyl polymer chain is typically more than 50% by weight, may be 70% by weight or more, and may be 85% by weight or more. It may be 95% by weight or more.
  • Substantially all of the polymer chain B may be a repeating unit derived from an N-vinyl type monomer.
  • examples of N-vinyl type monomers include monomers having a nitrogen-containing heterocycle (for example, a lactam ring) and N-vinyl chain amides.
  • Specific examples of the N-vinyllactam type monomer include N-vinylpyrrolidone, N-vinylpiperidone, N-vinylmorpholinone, N-vinylcaprolactam, N-vinyl-1,3-oxadin-2-one, and N-vinyl-. Examples thereof include 3,5-morpholindione.
  • Specific examples of the N-vinyl chain amide include N-vinylacetamide, N-vinylpropionic acid amide, N-vinylbutyric acid amide and the like.
  • the polymer chain B is, for example, an N-vinyl-based polymer chain in which more than 50% by weight (for example, 70% by weight or more, 85% by weight or more, or 95% by weight or more) of the repeating unit is an N-vinylpyrrolidone unit. obtain. Substantially all of the repeating units constituting the polymer chain B may be N-vinylpyrrolidone units.
  • polymer chain B is a polymer chain having a repeating unit derived from an N- (meth) acryloyl type monomer as a main repeating unit, that is, an N- (meth) acryloyl-based polymer chain.
  • the content of the repeating unit derived from the N- (meth) acryloyl type monomer in the N- (meth) acryloyl polymer chain is typically more than 50% by weight, may be 70% by weight or more, and may be 85% by weight. It may be 5% by weight or more, or 95% by weight or more.
  • Substantially all of the polymer chain B may be a repeating unit derived from an N- (meth) acryloyl type monomer.
  • examples of the N- (meth) acryloyl type monomer include a chain amide having an N- (meth) acryloyl group and a cyclic amide having an N- (meth) acryloyl group.
  • Examples of chain amides having an N- (meth) acryloyl group are (meth) acrylamide; N-methyl (meth) acrylamide, N-ethyl (meth) acrylamide, N-propyl (meth) acrylamide, N-isopropyl ( N-alkyl (meth) acrylamide such as meta) acrylamide, Nn-butyl (meth) acrylamide; N, N-dimethyl (meth) acrylamide, N, N-diethyl (meth) acrylamide, N, N-dipropyl (meth) ) N, N-dialkyl (meth) acrylamide such as acrylamide, N, N-diisopropyl (meth) acrylamide, N, N-di (n-butyl) (meth) acrylamide; and the like.
  • Examples of cyclic amides having an N- (meth) acryloyl group include N- (meth) acryloy
  • polymer chain B is a polymer chain containing an oxyalkylene unit as a main repeating unit, that is, an oxyalkylene polymer chain.
  • the content of the oxyalkylene unit in the oxyalkylene polymer chain is typically more than 50% by weight, may be 70% by weight or more, may be 85% by weight or more, and may be 95% by weight or more. There may be. Substantially all of the repeating units contained in the polymer chain B may be oxyalkylene units.
  • the oxyalkylene unit examples include an oxyethylene unit, an oxypropylene unit, an oxybutylene unit and the like. Each such oxyalkylene unit can be a repeating unit derived from the corresponding alkylene oxide.
  • the oxyalkylene unit contained in the oxyalkylene polymer chain may be one kind or two or more kinds. For example, it may be an oxyalkylene polymer chain containing an oxyethylene unit and an oxypropylene unit in combination. In an oxyalkylene polymer chain containing two or more kinds of oxyalkylene units, the oxyalkylene units may be random copolymers of corresponding alkylene oxides, block copolymers, or alternating copolymers. It may be a polymer or a graft copolymer.
  • a polymer chain containing a repeating unit derived from an alkyl vinyl ether for example, a vinyl ether having an alkyl group having 1 or more and 10 or less carbon atoms
  • a monocarboxylic acid vinyl ester for example, the number of carbon atoms
  • examples thereof include a polymer chain containing a repeating unit derived from (vinyl ester of 3 or more monocarboxylic acids), a polymer chain into which a cationic group (for example, a cationic group having a quaternary ammonium structure) is introduced, and the like.
  • the polyvinyl alcohol-based polymer as the water-soluble polymer in the technique disclosed herein is preferably a modified polyvinyl alcohol which is a copolymer containing VA units and non-VA units.
  • the saponification degree of the polyvinyl alcohol-based polymer as the water-soluble polymer is usually 50 mol% or more, preferably 65 mol% or more, more preferably 70 mol% or more, for example, 75 mol% or more. In principle, the saponification degree of the polyvinyl alcohol-based polymer is 100 mol% or less.
  • an N-vinyl type polymer may be used as the water-soluble polymer.
  • N-vinyl type polymers include polymers containing repeating units derived from monomers having a nitrogen-containing heterocycle (eg, a lactam ring).
  • examples of such polymers include homopolymers and copolymers of N-vinyl lactam type monomers (for example, copolymers in which the copolymerization ratio of N-vinyl lactam type monomers exceeds 50% by weight), N-vinyl.
  • the homopolymer and the copolymer of the chain amide for example, the copolymer in which the copolymerization ratio of the N-vinyl chain amide exceeds 50% by weight) and the like are included.
  • N-vinyllactam type monomer that is, a compound having a lactam structure and an N-vinyl group in one molecule
  • N-vinylpyrrolidone VP
  • N-vinylpiperidone N-vinylmorpholinone
  • N. -Vinyl caprolactam VC
  • N-vinyl-1,3-oxadin-2-one N-vinyl-3,5-morpholindione and the like can be mentioned.
  • polymers containing N-vinyl lactam type monomer units include polyvinylpyrrolidone, polyvinylcaprolactam, random copolymers of VP and VC, one or both of VP and VC and other vinyl monomers (eg, acrylics). Random copolymers with (monomers, vinyl ester-based monomers, etc.), block copolymers containing polymer chains containing one or both of VP and VC, alternating copolymers, graft copolymers, and the like can be mentioned.
  • Specific examples of the N-vinyl chain amide include N-vinylacetamide, N-vinylpropionic acid amide, N-vinylbutyric acid amide and the like.
  • the N- (meth) acryloyl type polymer may be preferably used as the water-soluble polymer.
  • the effects of the techniques disclosed herein can be more preferably achieved in compositions containing N- (meth) acryloyl-type polymers.
  • N- (meth) acryloyl-type polymers include homopolymers and copolymers of N- (meth) acryloyl-type monomers (typically, the copolymerization ratio of N- (meth) acryloyl-type monomers is 50 weight by weight. % (Copolymer) is included.
  • Examples of N- (meth) acryloyl-type monomers include chain amides having an N- (meth) acryloyl group and cyclic amides having an N- (meth) acryloyl group.
  • Examples of chain amides having an N- (meth) acryloyl group are (meth) acrylamide; N-methyl (meth) acrylamide, N-ethyl (meth) acrylamide, N-propyl (meth) acrylamide, N-isopropyl ( N-alkyl (meth) acrylamide such as meta) acrylamide, Nn-butyl (meth) acrylamide; N, N-dimethyl (meth) acrylamide, N, N-diethyl (meth) acrylamide, N, N-dipropyl (meth) ) N, N-dialkyl (meth) acrylamide such as acrylamide, N, N-diisopropyl (meth) acrylamide, N, N-di (n-butyl) (meth) acrylamide; and the like.
  • a copolymer of N-isopropylacrylamide and a copolymer of N-isopropylacrylamide for example, a copolymerization ratio of N-isopropylacrylamide Is a copolymer in excess of 50% by weight.
  • Examples of cyclic amides having an N- (meth) acryloyl group include N-acryloylmorpholine, N-acryloylthiomorpholine, N-acryloylpiperidin, N-acryloylpyrrolidine, N-methacryloylmorpholine, N-methacryloylpiperidin, N-methacryloyl. Examples include pyrrolidine.
  • An example of a polymer containing a cyclic amide having an N- (meth) acryloyl group as a monomer unit is an acryloyl morpholine polymer (PACMO).
  • Typical examples of the acryloylmorpholine-based polymer include a homopolymer of N-acryloylmorpholine (ACMO) and a copolymer of ACMO (for example, a copolymer in which the copolymerization ratio of ACMO exceeds 50% by weight).
  • ACMO N-acryloylmorpholine
  • the ratio of the number of moles of ACMO units to the number of moles of all repeating units is usually 50% or more, and 80% or more (for example, 90% or more, typically 95% or more). Is appropriate. All repeating units of the water-soluble polymer may be composed of substantially ACMO units.
  • the techniques disclosed herein include, as water-soluble polymers, one or more of nitrogen atom-containing polymers (typically N- (meth) acryloyl-type polymers).
  • Water-soluble polymers non-nitrogen atom-containing polymers, typically non-N- (meth) acryloyl-type polymers) that are different from nitrogen atom-containing polymers (typically N- (meth) acryloyl-type polymers). It is preferably carried out in a mode in which one or more of the above is used in combination.
  • the non-nitrogen atom-containing polymer (typically, a non-N- (meth) acryloyl type polymer) is not particularly limited, and for example, a modified or non-modified polyvinyl alcohol-based polymer is preferably used.
  • the nitrogen atom-containing polymer (typically N- (meth) acryloyl type polymer) used in combination with the above polyvinyl alcohol-based polymer is not particularly limited, and a cyclic amide having an N- (meth) acryloyl group is used as a monomer unit.
  • the polymer containing it is preferred, and PACMO is more preferred.
  • the usage ratio (nitrogen atom-containing polymer: non-nitrogen atom-containing polymer) is not particularly limited, and is 1: 9 to 9: 1 on a weight basis. It can be 3: 7 to 8: 2 or 5: 5 to 7: 3.
  • the weight average molecular weight (Mw) of the water-soluble polymer is not particularly limited.
  • the Mw of the water-soluble polymer may be, for example, about 200 ⁇ 104 or less, and about 150 ⁇ 10 4 or less is appropriate, and from the viewpoint of detergency and the like, it is preferably about 100 ⁇ 104 or less, which is about 100 ⁇ 104 or less. It may be 50 ⁇ 10 4 or less.
  • the Mw of the water-soluble polymer may be, for example, 0.2 ⁇ 104 or more, preferably 0.5 ⁇ 104 or more.
  • the Mw of 1.0 ⁇ 10 4 or more is suitable, and may be 2 ⁇ 10 4 or more, for example, 5 ⁇ 10 4 or more.
  • the range of molecular weights of preferred water-soluble polymeric compounds may vary depending on the type of polymer used.
  • the Mw of the cellulose derivative and the starch derivative can be approximately 200 ⁇ 104 or less, respectively , and 150 ⁇ 104 or less is appropriate.
  • the Mw may be about 100 ⁇ 10 4 or less, or about 50 ⁇ 10 4 or less (for example, about 30 ⁇ 10 4 or less).
  • the Mw is, for example, about 0.2 ⁇ 104 or more, about 0.5 ⁇ 104 or more, and preferably about 1.0 ⁇ . It may be 104 or more, more preferably about 3.0 ⁇ 10 4 or more, still more preferably about 10 ⁇ 10 4 or more, and more preferably about 20 ⁇ 10 4 or more.
  • the Mw of the polyvinyl alcohol-based polymer can be 100 ⁇ 10 4 or less, and 60 ⁇ 10 4 or less is suitable. From the viewpoint of concentration efficiency and the like, the Mw may be 30 ⁇ 10 4 or less, preferably 20 ⁇ 10 4 or less, for example, 10 ⁇ 10 4 or less, typically 8 ⁇ 10 4 or less. It may be 5 ⁇ 10 4 or less, or 3 ⁇ 10 4 or less. Further, from the viewpoint of suitably protecting the polished surface and maintaining or improving the surface quality, Mw may be, for example, 0.2 ⁇ 104 or more, and usually 0.5 ⁇ 104 or more is preferable. ..
  • Mw of 0.8 ⁇ 10 4 or more is suitable, preferably 1.0 ⁇ 10 4 or more, 2 ⁇ 10 4 or more, or 3 ⁇ 10 4 or more. For example, it may be 4 ⁇ 10 4 or more, or 5 ⁇ 10 4 or more.
  • the Mw of the polymer containing a nitrogen atom can be 100 ⁇ 10 4 or less, and 70 ⁇ 10 4 or less is suitable. From the viewpoint of concentration efficiency and the like, the Mw may be 60 ⁇ 10 4 or less, or 50 ⁇ 10 4 or less. Further, from the viewpoint of maintaining or improving the surface quality, Mw may be, for example, 1.0 ⁇ 10 4 or more, or 10 ⁇ 10 4 or more. In some embodiments, Mw of 20 ⁇ 104 or more is suitable, preferably 30 ⁇ 104 or more, and may be, for example, 40 ⁇ 104 or more.
  • the Mw of the water-soluble polymer a molecular weight calculated from a value (water-based, in terms of polyethylene oxide) based on water-based gel permeation chromatography (GPC) can be adopted.
  • GPC gel permeation chromatography
  • the GPC measuring device it is preferable to use the model name "HLC-8320GPC" manufactured by Tosoh Corporation. The measurement can be performed under the following conditions, for example. The same method is adopted for the examples described later.
  • a nonionic polymer can be preferably adopted as the water-soluble polymer.
  • a synthetic polymer can be preferably adopted as the water-soluble polymer.
  • the polishing composition is one in which the polymer derived from a natural substance is substantially not used as the water-soluble polymer. could be.
  • substantially not used means that the amount of the polymer derived from a natural product used is typically 3 parts by weight or less, preferably 1 part by weight or less, based on 100 parts by weight of the total content of the water-soluble polymer. This means 0 parts by weight or below the detection limit.
  • the content of the water-soluble polymer (content on a weight basis) in the polishing composition is not particularly limited. For example, it can be 1.0 ⁇ 10 -4 % by weight or more. From the viewpoint of haze reduction and the like, the preferable content is 5.0 ⁇ 10 -4 % by weight or more, more preferably 1.0 ⁇ 10 -3 % by weight or more, and further preferably 2.0 ⁇ 10 -3 % by weight. The above is, for example, 5.0 ⁇ 10 -3 % by weight or more. Further, from the viewpoint of polishing rate and the like, the content is preferably 0.2% by weight or less, more preferably 0.1% by weight or less, and 0.05% by weight or less (for example, 0.02% by weight).
  • the above-mentioned content is the total content (weight-based content) of all the water-soluble polymers contained in the polishing composition. It means that. These contents can be preferably applied to the content in the polishing liquid (working slurry) supplied to the substrate, for example.
  • the content of the water-soluble polymer (when two or more kinds of water-soluble polymers are contained, the total amount thereof) is the same as that of the abrasive grains. It can also be identified by relative relationships. Although not particularly limited, in some embodiments, the content of the water-soluble polymer with respect to 100 parts by weight of the abrasive grains can be, for example, 0.01 part by weight or more, and is 0. It is appropriate that the amount is 1 part by weight or more, preferably 0.5 part by weight or more, more preferably 1 part by weight or more, still more preferably 3 parts by weight or more, and for example, 4 parts by weight or more.
  • the content of the water-soluble polymer with respect to 100 parts by weight of the abrasive grains may be, for example, 50 parts by weight or less, or 30 parts by weight or less.
  • the content of the water-soluble polymer with respect to 100 parts by weight of the abrasive grains is preferably 15 parts by weight or less, preferably 10 parts by weight. It may be 8 parts by weight or less, and may be 7 parts by weight or less.
  • the polishing composition disclosed herein may further contain a surfactant B (arbitrary surfactant) different from the surfactant A, if necessary, in addition to the surfactant A.
  • a surfactant B any of anionic, cationic, nonionic and amphoteric ones can be used.
  • anionic or nonionic surfactant B may be preferably employed.
  • Nonionic surfactants are more preferable from the viewpoint of low foaming property and ease of pH adjustment.
  • oxyalkylene polymers such as polyethylene glycol, polypropylene glycol and polytetramethylene glycol; polyoxyethylene alkyl ether, polyoxyethylene alkyl phenyl ether, polyoxyethylene alkyl amine, polyoxyethylene fatty acid ester, polyoxyethylene glyceryl ether fatty acid.
  • Polyoxyalkylene derivatives such as esters and polyoxyethylene sorbitan fatty acid esters (eg, polyoxyalkylene adducts); copolymers of multiple oxyalkylenes (eg, diblock type copolymers, triblock type copolymers, etc.) Random type copolymers, alternate copolymers); and the like are nonionic surfactants.
  • the surfactant B a surfactant containing a polyoxyalkylene structure can be used. Surfactant B can be used alone or in combination of two or more.
  • nonionic surfactant containing a polyoxyalkylene structure examples include a block copolymer of ethylene oxide (EO) and propylene oxide (PO) (diblock type copolymer, PEO (polyethylene oxide) -PPO).
  • EO ethylene oxide
  • PO propylene oxide
  • PEO polyethylene oxide
  • the weight average molecular weight (Mws) of the surfactant B is typically less than 2000, and is preferably 1900 or less (for example, less than 1800) from the viewpoint of filterability, detergency and the like. Further, the Mws of the surfactant is usually preferably 200 or more from the viewpoint of surface activity ability and the like, and preferably 250 or more (for example, 300 or more) from the viewpoint of haze reducing effect and the like. A more preferred range of Mws for surfactant B may also vary depending on the type of surfactant B. For example, when polyoxyethylene alkyl ether is used as the surfactant B, its Mws is preferably 1500 or less, and may be 1000 or less (for example, 500 or less).
  • the Mws thereof may be, for example, 500 or more, 1000 or more, and further 1200 or more. May be.
  • the molecular weight of the surfactant B the molecular weight calculated from the chemical formula can be adopted as in the case of the surfactant A.
  • the content of the surfactant B is 10 times or less the content of the surfactant A (for example, 0. It is appropriate that the content is 01 times or more and 10 times or less), and the content of the surfactant A may be, for example, 5 times or less, 1 time or less, or 0.1 times or less.
  • the technique disclosed herein is preferably carried out in such a manner that the polishing composition does not substantially contain the surfactant B.
  • the fact that the polishing composition does not substantially contain the surfactant B means that the surfactant B is not contained at least intentionally.
  • the polishing composition disclosed herein includes organic acids, organic acid salts, inorganic acids, inorganic acid salts, chelating agents, preservatives, antifungal agents and the like, to the extent that the effects of the present invention are not significantly impaired. If necessary, a known additive that can be used in a polishing composition (for example, a polishing composition used in a finishing polishing step of a silicon wafer) may be further contained.
  • organic acid and its salt, and the inorganic acid and its salt can be used alone or in combination of two or more.
  • organic acids include fatty acids such as formic acid, acetic acid and propionic acid, aromatic carboxylic acids such as benzoic acid and phthalic acid, itaconic acid, citric acid, oxalic acid, tartrate acid, malic acid, maleic acid, fumaric acid and succinic acid.
  • Organic sulfonic acids such as acid, glycolic acid, malonic acid, gluconic acid, alanine, glycine, lactic acid, hydroxyethylidene diphosphate (HEDP), methanesulfonic acid, nitrilotris (methylenephosphate) (NTMP), phosphonobustan tricarbonate.
  • organic phosphonic acids such as acid (PBTC).
  • the organic acid salt include alkali metal salts (sodium salt, potassium salt, etc.) and ammonium salts of organic acids.
  • inorganic acids include hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, boric acid, carbonic acid and the like.
  • inorganic acid salts include alkali metal salts (sodium salt, potassium salt, etc.) and ammonium salts of inorganic acids.
  • the above chelating agent may be used alone or in combination of two or more.
  • the chelating agent include an aminocarboxylic acid-based chelating agent and an organic phosphonic acid-based chelating agent.
  • Preferable examples of the chelating agent include, for example, ethylenediamine tetrakis (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic acid) and diethylenetriaminepentaacetic acid.
  • the preservatives and fungicides include isothiazolinone compounds, paraoxybenzoic acid esters, phenoxyethanol and the like.
  • the polishing composition disclosed herein preferably contains substantially no oxidant.
  • the polishing composition contains an oxidizing agent
  • the polishing composition is supplied to a substrate (for example, a silicon wafer) to oxidize the surface of the substrate to form an oxide film, which causes a polishing rate. This is because it may decrease.
  • the oxidizing agent include hydrogen peroxide (H 2 O 2 ), sodium persulfate, ammonium persulfate, sodium dichloroisocyanurate, and the like.
  • the fact that the polishing composition does not substantially contain an oxidizing agent means that it does not contain an oxidizing agent at least intentionally.
  • a trace amount for example, the molar concentration of the oxidizing agent in the polishing composition is 0.0005 mol / L or less, preferably 0.0001 mol / L or less, more preferably 0.00001
  • the polishing composition inevitably containing an oxidizing agent of mol / L or less, particularly preferably 0.000001 mol / L or less, is the concept of the polishing composition which does not substantially contain the oxidizing agent. Can be included in.
  • the pH of the polishing composition disclosed herein is not particularly limited, and an appropriate pH may be adopted depending on the substrate, the type of abrasive grain when it contains abrasive grains, and the like.
  • the pH of the polishing composition is preferably 8.0 or higher, preferably 8.5 or higher, more preferably 9.0 or higher.
  • the higher the pH of the polishing composition the higher the polishing rate tends to be.
  • the pH of the polishing composition is usually set from the viewpoint of preventing dissolution of the abrasive grains (for example, silica particles) and suppressing a decrease in mechanical polishing action. It is preferably 12.0 or less, preferably 11.0 or less, more preferably 10.8 or less, and even more preferably 10.5 or less.
  • the pH of the polishing composition is a standard buffer solution (for example, a glass electrode type hydrogen ion concentration indicator (model number F-72) manufactured by Horiba Seisakusho). Phphthalate pH buffer pH: 4.01 (25 ° C), neutral phosphate pH buffer pH: 6.86 (25 ° C), carbonate pH buffer pH: 10.01 (25 ° C)) It can be grasped by calibrating at three points using the pH, placing the glass electrode in the composition to be measured, and measuring the value after it has stabilized after 2 minutes or more.
  • a standard buffer solution for example, a glass electrode type hydrogen ion concentration indicator (model number F-72) manufactured by Horiba Seisakusho.
  • the polishing composition disclosed herein is typically supplied onto the surface of a substrate in the form of a polishing liquid containing the polishing composition and used for polishing the substrate.
  • the polishing liquid may be prepared, for example, by diluting (typically diluting with water) any of the polishing compositions disclosed herein.
  • the polishing composition may be used as it is as a polishing liquid. That is, the concept of the polishing composition in the technique disclosed herein includes a polishing liquid (working slurry) supplied to a substrate and used for polishing the substrate, and a concentrated liquid (polishing) diluted and used as the polishing liquid. Both with the undiluted solution of the solution) are included.
  • the polishing liquid containing the polishing composition disclosed herein there is a polishing liquid obtained by adjusting the pH of the composition.
  • the polishing composition disclosed herein may be in a concentrated form (ie, in the form of a concentrated solution of the polishing solution) before being supplied to the substrate.
  • the polishing composition in such a concentrated form is advantageous from the viewpoint of convenience and cost reduction in manufacturing, distribution, storage and the like.
  • the concentration ratio is not particularly limited, and can be, for example, about 2 to 100 times in terms of volume, and usually about 5 to 50 times (for example, about 10 to 40 times) is appropriate.
  • Such a concentrated liquid can be diluted at a desired timing to prepare a polishing liquid (working slurry), and the polishing liquid can be used in a mode of supplying the polishing liquid to the substrate.
  • the dilution can be performed, for example, by adding water to the concentrate and mixing.
  • the polishing composition contains abrasive grains
  • the content of the abrasive grains in the concentrated solution is, for example, 25% by weight or less. can do.
  • the content is usually preferably 20% by weight or less, more preferably 15% by weight or less.
  • the content of the abrasive grains may be 10% by weight or less, or 5% by weight or less.
  • the content of abrasive grains in the concentrate can be, for example, 0.1% by weight or more, preferably 0.5% by weight. % Or more, more preferably 0.7% by weight or more, still more preferably 1% by weight or more.
  • the polishing composition used in the technique disclosed herein may be a one-dosage form or a multi-dosage form including a two-dosage form.
  • the polishing composition contains abrasive grains
  • a part A containing at least the abrasive grains among the constituent components of the polishing composition and a part B containing at least a part of the remaining components are mixed.
  • the polishing liquid may be prepared by mixing and diluting these at appropriate timings as needed.
  • the method for preparing the polishing composition is not particularly limited.
  • the mode in which these components are mixed is not particularly limited, and for example, all the components may be mixed at once, or may be mixed in an appropriately set order.
  • the polishing composition disclosed herein can be applied to the polishing of substrates having various materials and shapes.
  • the material of the substrate is, for example, a metal or semi-metal such as silicon, aluminum, nickel, tungsten, copper, tantalum, titanium, stainless steel, or an alloy thereof; a glassy substance such as quartz glass, aluminosilicate glass, and glassy carbon. It can be a ceramic material such as alumina, silica, sapphire, silicon nitride, tantalum nitride, titanium carbide; a compound semiconductor substrate material such as silicon carbide, gallium nitride, gallium arsenide; a resin material such as a polyimide resin; and the like.
  • a substrate made of a plurality of materials may be used.
  • the shape of the substrate is not particularly limited.
  • the polishing composition disclosed herein can be applied, for example, to polishing a substrate having a flat surface such as a plate or a polyhedron, or polishing an end portion of the substrate (for example, polishing a wafer edge).
  • the polishing composition disclosed herein can be particularly preferably used for polishing a surface made of silicon (typically polishing a silicon wafer).
  • a typical example of the silicon wafer referred to here is a silicon single crystal wafer, for example, a silicon single crystal wafer obtained by slicing a silicon single crystal ingot.
  • the polishing composition disclosed herein can be preferably applied to a polishing step of a substrate (for example, a silicon wafer).
  • the substrate may be subjected to general treatments such as wrapping and etching, which may be applied to the substrate in a process upstream of the polishing process, prior to the polishing step with the polishing composition disclosed herein.
  • the polishing composition disclosed herein is effective for use in the finishing step of a substrate (for example, a silicon wafer) or the polishing step immediately before the substrate (for example, silicon wafer), and is particularly preferably used in the finishing polishing step.
  • the finish polishing step refers to the final polishing step in the manufacturing process of the target product (that is, a step in which further polishing is not performed after the step).
  • the polishing composition disclosed herein also refers to a pre-polishing step upstream of finish polishing (a pre-polishing step between the rough polishing step and the final polishing step, typically comprising at least a primary polishing step. , Further may include polishing steps such as secondary, tertiary, etc.), for example, may be used in a polishing step performed immediately before finish polishing.
  • the polishing composition disclosed herein is, for example, to policing a silicon wafer (typically finish policing or immediately preceding policing) prepared by an upstream process to have a surface condition with a surface roughness of 0.01 nm to 100 nm. Is effective. Application to finish polishing is particularly preferred.
  • the surface roughness Ra of the substrate can be measured, for example, by using a laser scan type surface roughness meter "TMS-3000WRC" manufactured by Schmitt Measurement System Inc.
  • the polishing composition disclosed herein can be used for polishing a substrate, for example, in an embodiment including the following operations.
  • a preferred embodiment of a method of polishing a silicon wafer as a substrate using the polishing composition disclosed herein will be described. That is, a polishing liquid containing any of the polishing compositions disclosed herein is prepared.
  • Preparing the polishing liquid may include preparing a polishing liquid by adding operations such as concentration adjustment (for example, dilution) and pH adjustment to the polishing composition.
  • concentration adjustment for example, dilution
  • pH adjustment for example, a polishing liquid
  • the polishing composition may be used as it is as a polishing liquid.
  • the polishing liquid is supplied to the substrate and polished by a conventional method.
  • the silicon wafer that has undergone the lapping step is set in a general polishing device, and a polishing liquid is applied to the surface to be polished of the silicon wafer through the polishing pad of the polishing device.
  • Supply typically, while continuously supplying the polishing liquid, the polishing pad is pressed against the surface to be polished of the silicon wafer to relatively move (for example, rotationally move) the two. The polishing of the substrate is completed through such a polishing step.
  • the polishing pad used in the above polishing process is not particularly limited.
  • a polishing pad such as a polyurethane foam type, a non-woven fabric type, or a suede type can be used.
  • Each polishing pad may or may not contain abrasive grains.
  • a polishing pad containing no abrasive grains is preferably used.
  • Substrates polished with the polishing composition disclosed herein are typically washed. Cleaning can be performed using a suitable cleaning solution.
  • the cleaning liquid used is not particularly limited, and for example, SC-1 cleaning liquid (ammonium hydroxide (NH 4 OH), hydrogen peroxide (H 2 O 2 ), and water (H 2 O), which are common in the field of semiconductors and the like. (Mixed solution of), SC-2 cleaning solution (mixed solution of HCl, H 2 O 2 and H 2 O) and the like can be used.
  • the temperature of the cleaning liquid can be, for example, in the range of room temperature (typically about 15 ° C to 25 ° C) or higher and up to about 90 ° C. From the viewpoint of improving the cleaning effect, a cleaning liquid having a temperature of about 50 ° C. to 85 ° C. can be preferably used.
  • the techniques disclosed herein include a method for producing a polished product (eg, a method for producing a silicon wafer) including a polishing step (preferably finish polishing) by any of the above-mentioned polishing methods, and the method thereof.
  • a polishing step preferably finish polishing
  • the provision of manufactured abrasives may be included.
  • Example 1 Abrasive grains, a surfactant, a water-soluble polymer, a basic compound and deionized water were mixed to prepare a concentrated solution of the polishing composition according to this example.
  • Colloidal silica (average primary particle diameter: 27 nm) was used as the abrasive grains.
  • R 1 and R 4 of the above formula (1) are both iso-butyl groups, R 2 and R 3 are both methyl groups, the average number of added moles is 10, and the molecular weight is about.
  • a compound of 666 was used.
  • acetalized polyvinyl alcohol (ac - PVA) having a weight average molecular weight (Mw) of about 1.0 ⁇ 104 was used as the water-soluble polymer.
  • Ammonia was used as the basic compound.
  • concentration of the abrasive grains was 0.175%
  • concentration of the surfactant was 0.00015%
  • the water-soluble polymer was used.
  • the polishing composition according to this example was obtained, in which the concentration of the above was 0.005% and the concentration of the basic compound was 0.005%.
  • Example 2 As the surfactant, R 1 and R 4 of the above formula (1) are both iso-butyl groups, R 2 and R 3 are both methyl groups, the average number of added moles is 30, and the molecular weight is about 1540.
  • the polishing composition according to this example was prepared in the same manner as in Example 1 except that the compound was used.
  • Example 1 The polishing composition according to this example was prepared in the same manner as in Example 1 except that polyoxyethylene decyl ether (C10EO5) having 5 moles of ethylene oxide was used as the surfactant.
  • the surfactant used in this example is a compound having a molecular weight of 378.
  • Example 3 Abrasive grains, a surfactant, a water-soluble polymer, a basic compound and deionized water were mixed to prepare a concentrated solution of the polishing composition according to this example.
  • Colloidal silica (average primary particle diameter: 27 nm) was used as the abrasive grains.
  • the surfactant the compound used in Example 2 was used.
  • the water-soluble polymer hydroxyethyl cellulose (HEC) having an Mw of about 2.5 ⁇ 105 was used. Ammonia was used as the basic compound.
  • HEC hydroxyethyl cellulose
  • a polishing composition according to this example having a concentration of 0.009% and a concentration of a basic compound of 0.005% was obtained.
  • Comparative Example 2 The polishing composition according to this example was prepared in the same manner as in Example 3 except that the polyoxyethylene decyl ether (C10EO5) having 5 moles of ethylene oxide added used in Comparative Example 1 was used as the surfactant. did.
  • the polyoxyethylene decyl ether C10EO5 having 5 moles of ethylene oxide added used in Comparative Example 1 was used as the surfactant. did.
  • Example 4 Abrasive grains, a surfactant, a water-soluble polymer, a basic compound and deionized water were mixed to prepare a concentrated solution of the polishing composition according to this example.
  • Colloidal silica (average primary particle diameter: 27 nm) was used as the abrasive grains.
  • R 1 and R 4 of the above formula (1) are both iso-butyl groups, R 2 and R 3 are both methyl groups, the average number of added moles is 1.3, and the molecular weight.
  • a compound of about 283 was used.
  • polyacryloylmorpholine having an Mw of about 4.7 ⁇ 105 and acetalized polyvinyl alcohol (ac-PVA) having an Mw of about 1.0 ⁇ 10 4 were used.
  • Ammonia was used as the basic compound.
  • concentration of the abrasive grains was 0.169%
  • concentration of the surfactant was 0.00015%
  • concentration of PACMO was adjusted.
  • a polishing composition according to this example having a concentration of 0.0083%, a concentration of ac-PVA of 0.005%, and a concentration of a basic compound of 0.005% was obtained.
  • Example 5 As the surfactant, R 1 and R 4 of the above formula (1) are both iso-butyl groups, R 2 and R 3 are both methyl groups, the average number of added moles is 3.5, and the molecular weight is
  • the polishing composition according to this example was prepared in the same manner as in Example 4 except that the compound of about 380 was used.
  • Example 6 The polishing composition according to this example was prepared in the same manner as in Example 4 except that the compound used in Example 1 was used as the surfactant.
  • Example 7 The polishing composition according to this example was prepared in the same manner as in Example 4 except that the compound used in Example 2 was used as the surfactant.
  • Example 8 The polishing composition according to this example was prepared in the same manner as in Example 7 except that the concentration of the surfactant was 0.0003%.
  • Comparative Example 3 As the surfactant, the polyoxyethylene decyl ether (C10EO5) having 5 moles of ethylene oxide added used in Comparative Example 1 was used, and the same as in Example 4 except that the concentration was 0.005%.
  • the polishing composition according to each example was prepared.
  • a commercially available silicon single crystal wafer (conduction type: P type, crystal orientation: ⁇ 100>, COP (Crystal Originated Particle: crystal defect) free) having a diameter of 200 mm that has been wrapped and etched is prepared under the following polishing condition 1.
  • a polished silicon wafer was prepared.
  • Preliminary polishing was performed using a polishing solution containing 1.0% of abrasive grains (coloidal silica having an average primary particle diameter of 42 nm) and 0.068% of potassium hydroxide in deionized water.
  • Polishing device Single-wafer polishing device model "PNX-322" manufactured by Okamoto Machine Tool Mfg. Co., Ltd. Polishing load: 15kPa Surface plate rotation speed: 30 rpm Head (carrier) rotation speed: 30 rpm Polishing pad: Made by Fujibo Ehime Co., Ltd. Product name "FP55” Pre-polishing liquid supply rate: 550 mL / min Pre-polishing liquid temperature: 20 ° C Surface plate cooling water temperature: 20 ° C Polishing time: 3 min
  • polishing composition according to each example prepared above was used as a polishing liquid, and the silicon wafer after the pre-polishing was polished under the following polishing condition 2.
  • Polishing device Single-wafer polishing device model "PNX-322" manufactured by Okamoto Machine Tool Mfg. Co., Ltd. Polishing load: 15kPa Surface plate rotation speed: 30 rpm Head (carrier) rotation speed: 30 rpm Polishing pad: Made by Fujibo Ehime Co., Ltd. Product name "POLYPAS275NX (RB)” Abrasive liquid supply rate: 400 mL / min Abrasive liquid temperature: 20 ° C Surface plate cooling water temperature: 20 ° C Polishing time: 4min
  • SC-1 cleaning Specifically, two first and second washing tanks were prepared, and the washing liquid was contained in each of the washing tanks and kept at 60 ° C.
  • the polished silicon wafer is immersed in the first cleaning tank for 5 minutes, then immersed in ultrapure water to apply ultrasonic waves, and then immersed in the second cleaning tank for 5 minutes and then ultrapure water. It was dried using a spin dryer through a rinsing tank that was immersed in a silicon wafer and subjected to ultrasonic waves.
  • the surfactant (C10EO5) to be compared also has a certain haze improving effect, it is 105 or less on a relative value basis with respect to Comparative Examples 1, 2 and 3 containing the surfactant (C10EO5). Those showing the haze ratio are determined to have the haze value maintained or improved.
  • a silicon wafer with a diameter of 200 mm (conduction type: P type, crystal orientation: ⁇ 100>, COP (Crystal Originated Particle: crystal defect) free) was prepared as an object to be polished, and 60 was added to an HF aqueous solution (HF concentration: 2%). The oxide film was removed by immersing for a second, and the polishing composition according to each example was used as a polishing liquid and polished under the following polishing condition 3.
  • Polishing device Single-wafer polishing device model "PNX-322" manufactured by Okamoto Machine Tool Mfg. Co., Ltd. Polishing load: 15kPa Surface plate rotation speed: 30 rpm Head (carrier) rotation speed: 30 rpm Polishing pad: Made by Fujibo Ehime Co., Ltd. Product name "POLYPAS275NX (RB)” Abrasive liquid supply rate: 400 mL / min Abrasive liquid temperature: 20 ° C Surface plate cooling water temperature: 20 ° C Polishing time: 10 min
  • a composition suitable for polishing can be produced by using a surfactant which is a compound represented by the above formula (1).

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne une nouvelle composition de polissage appropriée pour le polissage. L'invention concerne également une composition de polissage pour tranches de silicium. La composition de polissage contient un composé basique, un tensioactif et de l'eau. Le tensioactif est un composé de type acétylène-glycol ayant un groupe acétylène par molécule et est par ailleurs un composé auquel un oxyde d'alkylène a en outre été ajouté.
PCT/JP2021/042940 2020-11-30 2021-11-24 Composition de polissage pour tranches de silicium et son utilisation WO2022113986A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273642A (ja) * 2006-03-30 2007-10-18 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
US20130244432A1 (en) * 2012-03-14 2013-09-19 Cabot Microelectronics Corporation Cmp compositions selective for oxide and nitride with high removal rate and low defectivity
JP6761554B1 (ja) * 2020-01-22 2020-09-23 日本酢ビ・ポバール株式会社 研磨用組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273642A (ja) * 2006-03-30 2007-10-18 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
US20130244432A1 (en) * 2012-03-14 2013-09-19 Cabot Microelectronics Corporation Cmp compositions selective for oxide and nitride with high removal rate and low defectivity
JP6761554B1 (ja) * 2020-01-22 2020-09-23 日本酢ビ・ポバール株式会社 研磨用組成物

Non-Patent Citations (1)

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Title
ANONYMOUS: "Nissin chemical industry company", SHIN ETSU, 1 January 2019 (2019-01-01), pages 1 - 4, XP055932543 *

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