WO2022113352A1 - 光学素子、撮像素子及び撮像装置 - Google Patents

光学素子、撮像素子及び撮像装置 Download PDF

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Publication number
WO2022113352A1
WO2022113352A1 PCT/JP2020/044530 JP2020044530W WO2022113352A1 WO 2022113352 A1 WO2022113352 A1 WO 2022113352A1 JP 2020044530 W JP2020044530 W JP 2020044530W WO 2022113352 A1 WO2022113352 A1 WO 2022113352A1
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Prior art keywords
light
pixel
optical element
transparent layer
structures
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Ceased
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PCT/JP2020/044530
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English (en)
French (fr)
Japanese (ja)
Inventor
将司 宮田
成 根本
史英 小林
俊和 橋本
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NTT Inc
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Nippon Telegraph and Telephone Corp
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Priority to JP2022565007A priority Critical patent/JP7574858B2/ja
Priority to EP20963616.6A priority patent/EP4242701A4/en
Priority to CN202080107522.5A priority patent/CN116547566B/zh
Priority to PCT/JP2020/044530 priority patent/WO2022113352A1/ja
Priority to KR1020237017918A priority patent/KR102831769B1/ko
Priority to US18/039,056 priority patent/US20240006441A1/en
Publication of WO2022113352A1 publication Critical patent/WO2022113352A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H04N23/21—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from near infrared [NIR] radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

Definitions

  • the present invention relates to an optical element, an image pickup device, and an image pickup device.
  • a general image pickup device uses a lens optical system and a two-dimensional image pickup element such as a CCD (Charge Coupled Device) sensor or a CMOS (Complementary Metal Oxide Semiconductor) sensor to provide light intensity information and color from an image pickup target. Acquire a two-dimensional image consisting of information.
  • a CCD Charge Coupled Device
  • CMOS Complementary Metal Oxide Semiconductor
  • the image pickup element of a conventional color sensor is a photoelectric conversion element that collects the incident light transmitted through the image pickup lens with a microlens and arranges a color filter for each color on each pixel to convert only light of a specific wavelength. It is common to receive light from the lens.
  • the incident angle of the incident light that has passed through the image pickup lens has a different angle between the central portion and the peripheral portion of the sensor
  • the mode of focusing by the microlens also differs between the central portion and the peripheral portion, and the periphery of the sensor.
  • the light receiving sensitivity is deteriorated in the portion.
  • the present invention has been made in view of the above, and an object of the present invention is to provide an optical element, an image pickup device, and an image pickup device capable of improving the light receiving sensitivity in the peripheral portion of the sensor.
  • the optical element according to the present invention has a transparent layer for covering a plurality of pixels including a photoelectric conversion element, and a transparent layer on or in the transparent layer.
  • the plurality of structures include a plurality of structures arranged in the plane direction of the above, and the plurality of structures directly underneath the light of the first color among the incident light according to the incident angle of the incident light of each structure. It is characterized in that it is arranged so as to condense light on a first pixel located and condense light of a second color on a second pixel located immediately below.
  • the image pickup device is characterized by including the above-mentioned optical element and a plurality of pixels covered with a transparent layer.
  • the image pickup apparatus is characterized by having the above-mentioned image pickup element and a signal processing unit that processes an electric signal output by the image element and generates an image.
  • the light receiving sensitivity in the peripheral portion of the sensor can be improved.
  • FIG. 1 is a side view showing a schematic configuration of the image pickup apparatus according to the first embodiment.
  • FIG. 2 is a diagram schematically showing a part of a cross section of the pixel array and the polarization wavelength separation lens array of the image pickup device according to the first embodiment.
  • FIG. 3 is a diagram schematically showing a part of a cross section of a pixel array and an optical element array in the central portion of the image pickup device according to the first embodiment.
  • FIG. 4 is a diagram schematically showing a part of a cross section of a pixel array and an optical element array in the outer peripheral portion of the image pickup device according to the first embodiment.
  • FIG. 5 is a diagram showing an example of a schematic configuration of a structure.
  • FIG. 1 is a side view showing a schematic configuration of the image pickup apparatus according to the first embodiment.
  • FIG. 2 is a diagram schematically showing a part of a cross section of the pixel array and the polarization wavelength separation lens array of the image pickup device according to the first embodiment
  • FIG. 6 is a diagram showing an example of a schematic configuration of a structure.
  • FIG. 7 is a diagram showing an example of a schematic configuration of a structure.
  • FIG. 8 is a diagram showing an example of a schematic configuration of a structure.
  • FIG. 9 is a diagram showing an example of a schematic configuration of a structure.
  • FIG. 10 is a diagram showing an example of a schematic configuration of a structure.
  • FIG. 11 is a diagram showing an example of a combination of each wavelength and an optical phase delay amount.
  • FIG. 12 is a diagram illustrating the definition of the incident angle.
  • FIG. 13 is a diagram showing an example of lens design when the structure is SiN.
  • FIG. 14 is a diagram showing an example of lens design when the structure is SiN.
  • FIG. 13 is a diagram showing an example of lens design when the structure is SiN.
  • FIG. 15 is a diagram showing an example of lens design when the structure is SiN.
  • FIG. 16 is a diagram showing an example of lens design when the structure is SiN.
  • FIG. 17 is a diagram schematically showing a pixel arrangement of pixel units in a pixel array.
  • FIG. 18 is a diagram illustrating the definition of the incident angle.
  • FIG. 19 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 20 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 21 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 22 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 23 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 24 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 25 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 26 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 27 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 28 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 29 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 30 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 31 is a diagram schematically showing another example of a part of the cross section of the pixel array and the optical element array in the image pickup device according to the first embodiment.
  • FIG. 32 is a diagram schematically showing another example of a part of the cross section of the pixel array and the optical element array in the image pickup device according to the first embodiment.
  • FIG. 33 is a diagram showing an example of the cross-sectional shape of the structure.
  • FIG. 34 is a diagram schematically showing a part of a cross section of the pixel array and the optical element array in the central portion of the image pickup device according to the second embodiment.
  • FIG. 35 is a diagram schematically showing a part of a cross section of a pixel array and an optical element array in the central portion of the image pickup device according to the second embodiment.
  • FIG. 36 is a diagram schematically showing a pixel arrangement of pixel units in a pixel array.
  • FIG. 37 is a diagram illustrating the definition of the incident angle.
  • FIG. 38 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 39 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 40 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 41 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 42 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 43 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 44 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 45 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 46 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 47 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 48 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 49 is a diagram showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • FIG. 50 is a diagram schematically showing another pixel arrangement of the pixel unit in the pixel array.
  • FIG. 1 is a side view showing a schematic configuration of the image pickup apparatus according to the first embodiment.
  • the image pickup device 10 includes a lens optical system 11, an image pickup element 12, and a signal processing unit 13.
  • the image pickup device 12 has a photoelectric conversion element such as a CCD or CMOS.
  • the signal processing unit 13 processes the photoelectric conversion signal output from the image pickup device 12 to generate an image signal.
  • the lens optical system 11 is composed of a lens group composed of a plurality of lenses arranged along an optical axis in order to correct various optical aberrations.
  • the drawing is simplified to form a single lens. Shows.
  • the signal processing unit 13 has an image signal output for transmitting the generated image signal to the outside.
  • the image pickup apparatus 10 may include known components such as an optical filter for cutting infrared light, an electronic shutter, a viewfinder, a power supply (battery), and a flashlight, but the description thereof is particularly useful for understanding the present invention. Omitted because it is not necessary. Further, the above configuration is merely an example, and in the embodiment, known elements can be appropriately combined and used as components excluding the lens optical system 11, the image pickup device 12, and the signal processing unit 13.
  • FIG. 2 is a diagram schematically showing a cross section of a main part of the lens optical system 11 and the image pickup device 12 according to the first embodiment.
  • a part of the image pickup device 12 will be described as the image pickup device 100.
  • the image pickup device 100 has an optical element array in which a plurality of columnar structures that guide incident light to the photoelectric conversion element of the pixel array are formed on the entire surface. Further, in the image pickup element 100, as shown in FIG.
  • the columnar structure is set to a shape that gives a phase characteristic for guiding to the pixel directly under the columnar structure in a state of being separated into a predetermined color according to the incident angle of the incident light. That is, the cross-sectional shape of each of the plurality of columnar structures formed in the optical element array is set to be different between the central portion and the outer peripheral portion of the optical element array.
  • FIG. 3 is a diagram schematically showing a part of a cross section of a pixel array and an optical element array in the central portion of the image pickup device according to the embodiment.
  • FIG. 4 is a diagram schematically showing a part of a cross section of a pixel array and an optical element array in the outer peripheral portion of the image pickup device according to the embodiment.
  • the arrow schematically indicates the light incident on the image pickup device 100.
  • the xyz coordinate system is shown.
  • the xy plane direction corresponds to the plane direction of the pixel array 110, the transparent layer 150, etc., which will be described later.
  • planar view refers to viewing in the z-axis direction (for example, in the negative direction of the Z-axis).
  • Segal view refers to viewing in the x-axis direction or the y-axis direction (eg, the y-axis negative direction).
  • the image pickup device 100 has a pixel array 110 and an optical element array 120 arranged to face the pixel array 110.
  • the pixel array 110 and the optical element array 120 are provided in this order in the positive z-axis direction.
  • the optical element array 120 is arranged on the side where the light from the lens optical system 11 is incident.
  • the optical element array 120 is formed on the upper surface of the transparent layer 150 formed on the pixel array 110.
  • the pixel array 110 has a wiring layer 180 and a plurality of pixels 130 arranged in the xy plane direction.
  • Each pixel 130 is configured to include a photoelectric conversion element.
  • An example of a photoelectric conversion element is a photodiode (PD: Photo Diode).
  • PD Photo Diode
  • Each pixel corresponds to red (R), green (G) and blue (B).
  • An example of the wavelength band of red light is 600 nm ⁇ 0 , where ⁇ 0 is the wavelength.
  • An example of the wavelength band of green light is 500 nm ⁇ 0 ⁇ 600 nm.
  • An example of the wavelength band of blue light is ⁇ 0 ⁇ 500 nm.
  • pixel R, pixel G, and pixel B not shown.
  • These pixels R, two pixels G and pixels B are Bayer-arranged as described later to form one pixel unit.
  • the optical element array 120 is provided so as to cover the pixel array 110.
  • An example of an optical element array 120 is a metasurface.
  • the metasurface is composed of a plurality of microstructures (corresponding to structure 160) having a width equal to or less than the wavelength of light.
  • the metasurface may have a two-dimensional structure or a three-dimensional structure.
  • the optical element array 120 can control the phase and the light intensity according to the characteristics of light (wavelength, polarization, incident angle) only by changing the parameters of the structure 160. In the case of a three-dimensional structure, the degree of freedom in design is improved as compared with the two-dimensional structure.
  • the optical element array 120 has two functions, a wavelength separation function and a lens function.
  • the wavelength separation function is a function of separating incident light into light in each wavelength band.
  • the lens function is a function of condensing light of each wavelength on the corresponding pixel.
  • the incident light is separated into R light, G light, and B light by the wavelength separation function of the optical element array 120.
  • the lens function the R light is focused on the pixel R located directly below, the G light is focused on the pixel G located directly below, and the B light is focused on the pixel B located directly below.
  • the optical element array 120 includes a transparent layer 150 and a plurality of columnar structures 160.
  • the transparent layer 150 is provided on the pixel array 110 so as to cover the pixel array 110.
  • the transparent layer 150 has a refractive index lower than that of the structure 160.
  • An example of the material of the transparent layer 150 is SiO 2 .
  • the transparent layer 150 may be a void, in which case the refractive index of the transparent layer 150 may be equal to the refractive index of air.
  • the material of the transparent layer 150 may be a single material, or a plurality of materials may be layered.
  • the plurality of structures 160 are arranged on the transparent layer 150 or in the transparent layer 150 in the plane direction (xy plane direction) of the transparent layer 150, for example, periodically (having a periodic structure).
  • the structure 160 is provided on the transparent layer 150 on the side opposite to the pixel array 110 (the z-axis positive direction side) with the transparent layer 150 interposed therebetween.
  • the plurality of structures 160 may be arranged at equal intervals or may be arranged at irregular intervals for the sake of facilitating the design.
  • Each structure 160 is a nano-order-sized microstructure having dimensions as small as or smaller than the wavelength of incident light.
  • the plurality of structures 160 have the same height when viewed from the side.
  • the structure 160 guides the incident light to the photoelectric conversion element of the corresponding pixel 130 directly under it in a state of being separated into colors.
  • the first embodiment shows a case where the wavelength regions separated by the structure 160 are R, G, and B.
  • the plurality of structures 160 focus the R-colored light on the pixel R located directly below the incident light according to the incident angle of the incident light of each structure, and collect the G light directly below the pixel R. It is arranged so as to condense on G and condense B light on pixel B located directly below.
  • the structure 160 is formed by using a material having a refractive index higher than that of the surrounding material (transparent layer 150, air). As a result, the structure 160 strongly traps light inside the columnar structure and prevents optical coupling with the adjacent columnar structure.
  • each of the structures 160 gives an amount of optical phase delay according to the shape of the structure 160 to the incident light when viewed in a plan view.
  • the cross-sectional shape of each of the structures 160 differs between the central portion and the outer peripheral portion of the optical element array.
  • both the wavelength separation function and the light collection function are realized by utilizing the wavelength dispersion characteristic of the phase delay amount given to the incident light by the fine columnar structure 160.
  • the structure 160 is formed of a transparent layer 150 around the structure or a material such as SiN or TiO 2 having a refractive index n 1 higher than the refractive index n 0 of air, and the height of the structure 160 when viewed from the side.
  • the h (length in the z-axis direction) h is constant.
  • the structure 160 can be considered as an optical waveguide in which light is confined and propagated in the structure because of the difference in refractive index from the transparent layer.
  • the light when light is incident from the lens optical system 11 side, the light propagates while being strongly confined in the structure, and receives a phase delay effect determined by the effective refractive index n eff of the optical waveguide, and receives the phase delay effect on the pixel array 110 side. Is output from.
  • phase delay amount ⁇ by the structure 160 is expressed by the equation (where the wavelength of light in vacuum is ⁇ ). It is represented by 1).
  • phase delay amount ⁇ differs depending on the wavelength ⁇ of the light, it is possible to give different phase delay amounts to the light depending on the wavelength region in the same structure.
  • the effective refractive index n eff of the optical waveguide largely depends on the cross-sectional shape of the structure 160, and takes a value of n 0 ⁇ n eff ⁇ n 1 . Further, the effective refractive index n eff of the optical waveguide also differs depending on the wavelength ⁇ of the light, and the degree thereof largely depends on the cross-sectional shape of the structure 160.
  • the phase delay amount can be varied according to the wavelength ⁇ of the light. It is possible to set various combinations, and it is possible to newly design and realize a lens having different focusing positions according to the wavelength region.
  • FIG. 5 to 10 are views showing an example of a schematic configuration of the structure 160.
  • FIG. 5 is a side view of the structure 160 having a square shape when viewed in a plan view.
  • FIG. 6 is a plan view of the structure 160 shown in FIG.
  • FIG. 7 is a side view of the structure 160 having an X-shaped shape when viewed in a plan view.
  • FIG. 8 is a plan view of the structure 160 shown in FIG. 7.
  • FIG. 9 is a side view of the structure 160 having a hollow rhombus shape when viewed in a plan view.
  • FIG. 10 is a plan view of the structure 160 shown in FIG.
  • the structure 160 is a columnar structure extending in the z-axis direction, and is formed on a transparent layer 150 (for example, a SiO 2 substrate (refractive index 1.45)).
  • a transparent layer 150 for example, a SiO 2 substrate (refractive index 1.45).
  • An example of the material of the structure 160 is SiN (refractive index 2.05).
  • the sides and above of the structure 160 are air (Air (refractive index 1.0)).
  • ⁇ min is the shortest wavelength in the wavelength band of the light receiving target, and is, for example, 410 nm.
  • the arrangement period P of the structure 160 is, for example, 280 nm.
  • the height (length in the z-axis direction) of the structure 160 when viewed from the side is referred to as a height h and is illustrated.
  • the height h of the structure 160 is constant.
  • the height h is set in the equation (3) so that the structure 160 can give an optical phase delay amount (phase value) of 2 ⁇ or more to the incident light, that is, the light traveling along the z-axis direction. It is desirable to set as such.
  • the wavelength ⁇ r is a desired center wavelength in the wavelength band on the longest wavelength side of the wavelength bands of light to be separated by wavelength.
  • n 1 is the refractive index of the structure 160.
  • the structure 160 has a square shape, a cross shape, and a circular shape when viewed in a plan view.
  • Each of the square, cross, and circular structures 160 has the same basic shape but different dimensions (length, width, etc.).
  • the shape of the structure 160 when viewed in a plan view may be a four-fold rotationally symmetric shape.
  • Such a shape may include, for example, at least one of a square shape, a cross shape, and a circular shape.
  • Each structure 160 has a four-fold rotationally symmetric shape when viewed in a plane, so that the characteristics are independent of polarization.
  • the hollow rhombus shape is an example of a shape including a square shape, and is a shape obtained by rotating the hollow square shape in-plane by 45 °.
  • FIG. 11 is a diagram showing an example of a combination of each wavelength and an optical phase delay amount.
  • the square plot shows the amount of optical phase delay when various dimensions of the cross-sectional shape of the structure 160 having a square cross-sectional shape are set.
  • the X-shaped plot shows the amount of optical phase delay when various dimensions of the cross-sectional shape are set in the structure 160 having the X-shaped cross-sectional shape.
  • the rhombus plot shows the amount of optical phase delay when various dimensions of the cross-sectional shape are set in the structure 160 having the cross-sectional shape of the hollow rhombus shape. In each case, the height h is constant.
  • the black circle plot is an ideal amount of optical phase delay in the lens design described later.
  • FIG. 11 shows the amount of optical phase delay when the structure 160 is SiN.
  • the design of the cross-sectional shape of the structure 160 can realize various combinations of light of each color (light of each wavelength) and the amount of optical phase delay. That is, the optical phase delay amount characteristic (phase characteristic) having various wavelength dispersions can be realized only by using a columnar structure having the same height h. This is because the wavelength dispersion characteristics of the resulting optical waveguide mode / optical resonance mode and the resulting optical phase delay amount can be changed depending on the cross-sectional shape.
  • the cross-sectional shape and arrangement of the structure 160 arranged in the plane direction of the transparent layer 150 it is possible to realize a lens function having different light collecting points for each wavelength. It should be noted that the lens design is possible not only when the wavelength is three but also when the wavelength is two or the wavelength is four or more.
  • the phase distribution of the lens is designed so as to be focused on the center of the photoelectric conversion element below the lens in correspondence with the incident light of the light incident on the structure 160, and is shown in FIG. Design the lens with reference to the phase characteristics. Therefore, in the plurality of structures 160 (FIGS. 3 and 4), the cross-sectional shape is set to be different between the central portion and the outer peripheral portion of the optical element array 12, so that the incident angles of the incident light are different in the central portion. In both the outer peripheral portion and the outer peripheral portion, the light of the color corresponding to the pixel B among the light incident on the outside of the region facing the pixel B is also arranged so as to be focused on the pixel B.
  • the light of the color corresponding to the pixel G is also arranged so as to be focused on the pixel G.
  • the light of the color corresponding to the pixel R is also arranged so as to be focused on the pixel R. This makes it possible to increase the amount of received light in each pixel.
  • FIG. 12 is a diagram illustrating the definition of the incident angle. As shown in FIG. 12, a case where light is incident at an incident angle of ( ⁇ , ⁇ ) will be described. Design the phase distribution of the lens so that the light is focused on the center of the photoelectric conversion element below the lens (structure 160) according to the incident angle ( ⁇ , ⁇ ), and refer to the phase characteristics shown in FIG.
  • the cross-sectional shape and arrangement of the structure 160 of the SiN composition structure was designed according to the ideal optical phase delay amount of the design target. For example, the size of the pixel is 1.68 ⁇ m ⁇ 1.68 ⁇ m.
  • the focal length is 4.2 ⁇ m.
  • the central wavelength corresponding to blue light is 430 nm.
  • the central wavelength corresponding to green light is 520 nm.
  • the central wavelength corresponding to the red light is 635 m.
  • the optical phase delay distribution ⁇ of the lens that concentrates light at a certain incident angle ( ⁇ , ⁇ ) to a point z f away from the lens directly below (the center point of an arbitrary pixel) is given by the following equation (4). It is expressed by an expression.
  • ⁇ d is the center wavelength (design wavelength).
  • x f , y f and z f are light collecting positions.
  • n in is the refractive index of the material on the incident side.
  • n out is the refractive index of the material on the emitting side.
  • the ideal optical phase delay amount distribution is a phase distribution that gives the following focusing positions to each of pixel B , pixels G1, G2, and pixel R.
  • ⁇ is converted so that it falls within the range of 0 to 2 ⁇ . For example, ⁇ 0.5 ⁇ and 2.5 ⁇ are converted to 1.5 ⁇ and 0.5 ⁇ , respectively.
  • the boundary region of the optical phase delay distribution was set so that the center of the optical phase delay distribution of the lens at each design wavelength was the condensing position (together with the adjacent lens).
  • the constant C may be optimized so that the error (difference from the ideal value) of the optical phase delay amount distribution is minimized at each wavelength. From the optical phase delay amount at each wavelength, the structure most suitable for the optical phase delay amount distribution at each center wavelength of the above three wavelengths (the structure that minimizes the error) was arranged at the corresponding position.
  • FIG. 13 shows an ideal optical phase delay amount distribution (Phase (rad / ⁇ )) when the center wavelength is 430 nm (blue light).
  • FIG. 14 shows an ideal optical phase delay distribution when the center wavelength is 520 nm (green light).
  • FIG. 15 shows an ideal optical phase delay distribution when the center wavelength is 635 nm (red light).
  • FIG. 16 is a plan view of the structure 160 capable of realizing the optical phase delay amount distributions of FIGS. 13 to 15, respectively, and is a shape pattern of the structure 160 designed per one pixel unit (see FIG. 17 described later). be.
  • the shape of the structure 160 is a square shape, a cross shape, and a hollow diamond-shaped prism.
  • the shape of the structure 160 is not limited to the wavelength region to be separated, and any kind of square shape, x-shaped shape, or hollow rhombus shape can be set.
  • the type of the planar shape of the structure 160 may be set for each wavelength region to be separated.
  • FIG. 17 is a diagram schematically showing the pixel arrangement of the pixel unit in the pixel array 110. It is a figure which shows an example of arrangement.
  • FIG. 18 is a diagram illustrating the definition of the incident angle.
  • 19 to 30 are diagrams showing an example of the incident angle dependence of the light receiving intensity in the pixel. 17 to 30 show an example of the angle of incidence dependence when the structure 160 is SiN.
  • the shape of the structure 160 is such that the pattern is changed according to the main incident angle, that is, according to the pixel position in the sensor (image sensor 100).
  • a plurality of pixel units having pixel R, pixel G 1 , pixel G 2 and pixel B are arranged in the pixel array 110.
  • the light receiving spectra of the pixel R, the pixel G1, the pixel G2, and the pixel B when the angle (Angle) in the xz plane with the z - axis direction as 0 ° is the incident angle.
  • the angle of incidence dependence of is shown in FIGS. 19 to 26.
  • the light receiving efficiency of the pixel R is shown by the light receiving intensity for each wavelength (wavelength ( ⁇ m)) and for each incident angle (incident angle (degree)), that is, for each incident angle.
  • the light receiving efficiency of the pixel G 1 is shown by the light receiving intensity for each incident angle.
  • FIGS. 20 and 24 the light receiving efficiency of the pixel G 1 is shown by the light receiving intensity for each incident angle.
  • the light receiving efficiency of the pixel G 2 is shown by the light receiving intensity for each incident angle.
  • the light receiving efficiency of the pixel B is shown by the light receiving intensity for each incident angle.
  • the intensity is sufficient in the range of the incident angle of about ⁇ 12 ° at the center wavelengths of the pixel R, the pixel G 1 , the pixel G 2 and the pixel B. Can receive light.
  • 27 is the detection intensity of light having a wavelength of 630 nm by the pixel R
  • FIG. 28 is the detection intensity of light having a wavelength of 520 nm by the pixel G 1
  • FIG. 29 is the detection intensity of light having a wavelength of 520 nm by the pixel G 2
  • FIG. 30 shows the detection intensity of light having a wavelength of 430 nm by the pixel B.
  • the range is shifted by + 5 °.
  • the image sensor 100 is compared with the conventional image sensor that performs color separation using a color filter because the optical element array 120 realizes both the color separation function and the lens function. Therefore, the total amount of light received can also be increased.
  • the lens (structure 160) of the optical element array 120 is provided with an angle resistance corresponding to the main incident angle while having a color separation function.
  • the first embodiment by changing the pattern of the structure 160 according to the pixel position in the image sensor 100, the colors corresponding to the different main incident angles in the central portion and the peripheral portion of the image sensor 100 are obtained. A separate microlens can be realized. Therefore, according to the first embodiment, it is possible to realize a light collecting function corresponding to various incident angles determined by the position in the image sensor 100 for each pixel, and particularly improve the light receiving sensitivity in the peripheral portion of the image sensor 100. can do. Therefore, according to the first embodiment, it is possible to generate an image signal having uniform brightness and few color errors in the entire image sensor 100.
  • a microlens is provided on the side opposite to the pixel with a filter in between. Some are (integrated).
  • the structure since the structure has at least a two-layer structure of a filter and a microlens, the structure becomes complicated and the manufacturing cost increases.
  • the wavelength separation function and the lens function can be realized only by the optical element array 120, so that the structure can be simplified and the manufacturing cost can be reduced.
  • the plurality of structures 160 can be arranged in the plane (in the xy plane) without gaps, the aperture ratio is increased as compared with the microlens.
  • the allowable angle can be expanded by designing a lens (structure 160) having a shorter focal length.
  • the signal processing unit 13 shown in FIG. 1 generates a pixel signal based on the electric signal obtained from the image pickup device 12. In order to obtain an electric signal, the signal processing unit 13 also controls the image pickup element 12.
  • the control of the image pickup element 12 includes exposure of the pixels of the image pickup element 12, conversion of the electric charge stored in the pixel array 110 into an electric signal, reading of the electric signal, and the like.
  • the optical element array 120 is not limited to the above configuration, and may take various forms in the number and spacing of the structures 160, the structural shape, and the arrangement pattern. Further, the structures 160 may be connected to each other or may be embedded in a transparent material.
  • the optical element array 120 is formed on the upper surface of the transparent layer 150, but the present invention is not limited to this.
  • 31 and 32 are diagrams schematically showing another example of a part of the cross section of the pixel array and the optical element array in the image pickup device according to the first embodiment.
  • the optical element array 120 may be embedded inside the transparent layer 150A on the pixel 130.
  • the material of the transparent layer 150A may be a single material or a plurality of materials in a layered state.
  • the optical element array 120 may be formed on the bottom surface of the independent transparent substrate 190. In this case, the region between the optical element array 120 and the pixels 130 is filled with air 150B.
  • the material of the transparent substrate 190 may be a single material or a plurality of materials may be layered.
  • the image pickup devices 100, 100A, and 100B can also be used together with an on-chip microlens, an internal microlens, an interpixel barrier for reducing crosstalk, and the like.
  • FIG. 33 is a diagram showing an example of the cross-sectional shape of the structure.
  • the structure 160 may have various cross-sectional shapes as illustrated in FIG. 33.
  • the exemplified shape is, for example, a four-fold rotationally symmetric shape obtained by various combinations of a square shape, a cross shape, and a circular shape.
  • FIG. 34 is a diagram schematically showing a part of a cross section of the pixel array and the optical element array in the central portion of the image pickup device according to the second embodiment.
  • FIG. 35 is a diagram schematically showing a part of a cross section of a pixel array and an optical element array in the outer peripheral portion of the image pickup device according to the second embodiment.
  • the image pickup device 200 shown in FIGS. 34 and 35 includes a filter layer 170 provided between the pixel array 110 and the optical element array 120.
  • the filter layer 170 is provided so as to cover the pixel R and is provided so as to cover the red light and the filter 170R which is provided so as to cover the pixel G and is provided so as to cover the green light and the filter 170G which is provided so as to cover the pixel B. And includes a filter 170B that allows blue light to pass through.
  • An example of the material of the filter layer 170 is an organic material such as a resin.
  • the light color-separated by the optical element array 120 further passes through the filter layer 170 and then reaches the pixel array 110.
  • Wavelength separation of both the optical element array 120 and the filter layer 170 suppresses spectral crosstalk (removes most of the other unwanted wavelength components) and color reproduction compared to wavelength separation of only one. Sex improves.
  • the amount of light is not significantly reduced. Therefore, the light receiving efficiency of the pixels is improved as compared with the case where only the filter layer 170 is provided without the optical element array 120.
  • FIG. 36 is a diagram schematically showing the pixel arrangement of the pixel unit in the pixel array 110.
  • FIG. 37 is a diagram illustrating the definition of the incident angle.
  • 38 to 45 are diagrams showing an example of the incident angle dependence of the light receiving intensity in the pixel.
  • 38 to 45 show an example of the angle of incidence dependence when the structure 160 is SiN.
  • the light receiving efficiency of the pixel R is shown by the light receiving intensity for each wavelength and each incident angle, that is, for each incident angle.
  • the light receiving efficiency of the pixel G 1 is shown by the light receiving intensity for each incident angle.
  • the light receiving efficiency of the pixel G 2 is shown by the light receiving intensity for each incident angle.
  • the light receiving efficiency of the pixel B is shown by the light receiving intensity for each incident angle.
  • FIG. 46 shows the detection intensity of light having a wavelength of 630 nm by the pixel R
  • FIG. 47 shows the detection intensity of light having a wavelength of 520 nm by the pixel G 1
  • FIG. 48 shows the detection intensity of light having a wavelength of 520 nm by the pixel G 2
  • FIG. 49 shows the detection intensity of light having a wavelength of 430 nm by the pixel B.
  • the range of resistance is shifted by + 5 °.
  • FIG. 50 is a diagram schematically showing another pixel arrangement of the pixel unit in the pixel array.
  • the pixel array may have a pixel arrangement having pixels NIR (near-infrared) that receive near-infrared (NIR) light instead of the pixel G2 shown in FIG . ..
  • NIR near-infrared
  • the lens (structure 160) corresponding to the pixel NIR may be designed using the equation (4) with the center wavelength ⁇ d set to, for example, 850 nm.
  • SiN or TiO 2 has been described as an example of the material of the structure 160.
  • the material of the structure 160 is not limited to them.
  • SiC, TiO 2 , GaN or the like may be used as the material of the structure 6 in addition to SiN. It is suitable because it has a high refractive index and low absorption loss.
  • Si, SiC, SiCN, TiO 2 , GaAs, GaN and the like may be used as the material of the structure 6. Suitable because of its low loss.
  • InP or the like can be used as the material of the structure 160 in addition to the above-mentioned materials.
  • polyimide such as fluorinated polyimide, BCB (benzocyclobutene), photocurable resin, UV epoxy resin, acrylic resin such as PMMA, resist in general, etc.
  • photocurable resin such as fluorinated polyimide, BCB (benzocyclobutene), photocurable resin, UV epoxy resin, acrylic resin such as PMMA, resist in general, etc.
  • UV epoxy resin acrylic resin such as PMMA, resist in general, etc.
  • acrylic resin such as PMMA
  • resist in general etc.
  • the material include the above-mentioned polymers.
  • the present invention is not limited thereto. Any material having a refractive index lower than that of the material of the structure 160, including a general glass material, and having a low loss with respect to the wavelength of the incident light may be used.
  • the transparent layer 150 may be made of the same material as the color filter, for example, an organic material such as a resin, as long as the loss is sufficiently low with respect to the wavelength of light to reach the corresponding pixel. good.
  • the transparent layer 150 is not only made of the same material as the color filter, but also has the same structure as the color filter, and is designed to have absorption characteristics according to the wavelength of light to be guided to the corresponding pixel. You may.
  • the pixels are the near-infrared light and the light having a wavelength other than the three primary colors. (For example, infrared light, ultraviolet light, etc.) may also be supported.
  • first and second embodiments an example in which a structure having three types of cross-sectional shapes having different square shapes, x-shaped shapes, and hollow rhombuses is used as the shape of the structure 160 has been described.
  • This shape is an example, and two types of structures (for example, only a square shape and a cross-shaped shape) may be used, or four or more types of structures may be used.
  • the optical element array 120 has a transparent layer 150 for covering a plurality of pixels including a photoelectric conversion element, and a transparent layer 150 on the transparent layer 150, respectively.
  • the plurality of structures 160 arranged in the transparent layer 150 in the plane direction (xy plane direction) of the transparent layer 150 are provided, and the plurality of structures 160 are provided according to the incident angle of the incident light of each structure.
  • the light of the first color for example, blue
  • the first pixel for example, pixel B
  • the light of the second color for example, red
  • the light is arranged so as to be focused on the second pixel (for example, the pixel R).
  • the above-mentioned optical element array 120 has an angle resistance corresponding to the main incident angle while having a color separation function.
  • the optical element array 120 can realize a light collecting function corresponding to various incident angles determined by the position in the image pickup element 100 for each pixel, and can improve the light receiving sensitivity particularly in the peripheral portion of the sensor. Since the optical element array 120 can arrange the plurality of structures 160 without gaps in the plane, the aperture ratio is also increased as compared with the microlens.
  • the color separation function and the lens function may correspond to three colors, and may further correspond to the separation of near infrared light.
  • each of the plurality of structures 160 has a refractive index higher than that of the transparent layer 5, and corresponds to the cross-sectional shape with respect to the incident light. It may be a columnar structure that gives an optical phase delay amount.
  • the cross-sectional shape of each of the plurality of structures differs between the central portion and the outer peripheral portion of the optical element.
  • the plurality of structures 160 may be arranged according to the optical phase delay amount distribution for realizing the above-mentioned light collection. For example, by arranging such a plurality of structures 160, both the wavelength separation function and the lens function can be realized.
  • each of the plurality of structures 160 may be a four-fold rotationally symmetric shape. This makes it possible to prevent polarization dependence from occurring.
  • the plurality of structures 160 also include light of a color corresponding to the one pixel among the light incident on the outside of the region facing the one pixel. It may be arranged so as to focus on one pixel. As a result, the amount of received light can be increased as compared with the case where only the light incident on the region facing one pixel is focused on the pixel.
  • the image pickup device 100 described with reference to FIGS. 1 to 5 and the like is also an aspect of the present disclosure.
  • the image pickup device 100 includes an optical element array 120 and a plurality of pixels 130 (pixel NIR or the like) covered with a transparent layer 150.
  • pixel NIR pixel NIR or the like
  • the manufacturing cost can be reduced. It is also possible to improve the light receiving sensitivity and increase the aperture ratio.
  • the image pickup device 200 may include a filter layer 170 provided between a plurality of pixels (pixel NIR or the like) and the transparent layer 150. As a result, the light receiving efficiency can be improved and the color reproducibility can be further improved.
  • the image pickup apparatus 10 described with reference to FIG. 1 and the like is also an aspect of the present disclosure.
  • the image pickup device 10 includes the above-mentioned image pickup element 12 and a signal processing unit 13 that generates an image signal based on a pixel signal based on an electric signal obtained from the image pickup element 12.
  • the manufacturing cost can be reduced. It is also possible to improve the light receiving sensitivity and increase the aperture ratio.

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CN202080107522.5A CN116547566B (zh) 2020-11-30 2020-11-30 光学元件、摄像元件以及摄像装置
PCT/JP2020/044530 WO2022113352A1 (ja) 2020-11-30 2020-11-30 光学素子、撮像素子及び撮像装置
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