CN116547566B - 光学元件、摄像元件以及摄像装置 - Google Patents

光学元件、摄像元件以及摄像装置 Download PDF

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Publication number
CN116547566B
CN116547566B CN202080107522.5A CN202080107522A CN116547566B CN 116547566 B CN116547566 B CN 116547566B CN 202080107522 A CN202080107522 A CN 202080107522A CN 116547566 B CN116547566 B CN 116547566B
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China
Prior art keywords
light
pixel
image pickup
structures
optical element
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English (en)
Chinese (zh)
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CN116547566A (zh
Inventor
宫田将司
根本成
小林史英
桥本俊和
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Entiti Corp
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Nippon Telegraph and Telephone Corp
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Publication of CN116547566A publication Critical patent/CN116547566A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H04N23/21—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from near infrared [NIR] radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Optical Filters (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202080107522.5A 2020-11-30 2020-11-30 光学元件、摄像元件以及摄像装置 Active CN116547566B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/044530 WO2022113352A1 (ja) 2020-11-30 2020-11-30 光学素子、撮像素子及び撮像装置

Publications (2)

Publication Number Publication Date
CN116547566A CN116547566A (zh) 2023-08-04
CN116547566B true CN116547566B (zh) 2025-06-24

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Country Link
US (1) US20240006441A1 (https=)
EP (1) EP4242701A4 (https=)
JP (1) JP7574858B2 (https=)
KR (1) KR102831769B1 (https=)
CN (1) CN116547566B (https=)
WO (1) WO2022113352A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102587961B1 (ko) * 2021-08-05 2023-10-11 삼성전자주식회사 색분리 렌즈 어레이를 구비하는 이미지 센서 및 이를 포함하는 전자 장치
US12481094B2 (en) * 2021-10-04 2025-11-25 Phoebus Optoelectronics Llc Filters with reduced angle-of-incidence dependence
WO2025079513A1 (ja) * 2023-10-11 2025-04-17 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
US20250297855A1 (en) * 2024-03-21 2025-09-25 Kla Corporation System and method for device-like overlay targets measurement

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101067A1 (ja) * 2004-04-13 2005-10-27 Matsushita Electric Industrial Co., Ltd. 集光素子および固体撮像装置
EP1785750A1 (en) * 2004-09-01 2007-05-16 Matsushita Electric Industrial Co., Ltd. Condensing element, solid-state imaging device and method for fabricating the same
DE102007016588B4 (de) * 2007-04-05 2014-10-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikroskop mit Subwellenlängenauflösung und Verfahren zum Erzeugen eines Bilds eines Objekts
TWI424200B (zh) 2008-12-31 2014-01-21 Ind Tech Res Inst 色彩分離光學元件以及所應用的影像裝置
JP2011040441A (ja) * 2009-08-06 2011-02-24 Panasonic Corp 固体撮像装置
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
JP6035744B2 (ja) * 2012-01-10 2016-11-30 凸版印刷株式会社 固体撮像素子
CN111580190B (zh) * 2015-11-24 2021-12-28 哈佛学院院长及董事 制造针对可见光谱波长的电介质超颖表面的原子层沉积处理
JP7062366B2 (ja) 2017-03-03 2022-05-06 株式会社ジャパンディスプレイ 表示装置、表示方法及び色分離素子
JP6707105B2 (ja) 2018-04-17 2020-06-10 日本電信電話株式会社 カラー撮像素子および撮像装置
JP6857163B2 (ja) 2018-09-26 2021-04-14 日本電信電話株式会社 偏光イメージング撮像システム
EP3905330A4 (en) * 2018-12-27 2022-03-30 Sony Semiconductor Solutions Corporation IMAGING ELEMENT AND METHOD OF MAKING AN IMAGING ELEMENT
EP3812801B1 (en) * 2019-10-23 2024-06-19 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic device including the image sensor

Also Published As

Publication number Publication date
WO2022113352A1 (ja) 2022-06-02
JP7574858B2 (ja) 2024-10-29
JPWO2022113352A1 (https=) 2022-06-02
KR20230093052A (ko) 2023-06-26
CN116547566A (zh) 2023-08-04
US20240006441A1 (en) 2024-01-04
EP4242701A1 (en) 2023-09-13
EP4242701A4 (en) 2024-07-17
KR102831769B1 (ko) 2025-07-09

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Address after: Tokyo, Japan

Patentee after: Entiti Corp.

Country or region after: Japan

Address before: Tokyo, Japan

Patentee before: NIPPON TELEGRAPH AND TELEPHONE Corp.

Country or region before: Japan