WO2022105293A1 - 真空腔室及晶圆机台 - Google Patents

真空腔室及晶圆机台 Download PDF

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Publication number
WO2022105293A1
WO2022105293A1 PCT/CN2021/109065 CN2021109065W WO2022105293A1 WO 2022105293 A1 WO2022105293 A1 WO 2022105293A1 CN 2021109065 W CN2021109065 W CN 2021109065W WO 2022105293 A1 WO2022105293 A1 WO 2022105293A1
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Prior art keywords
vacuum chamber
wafer
sensing
adjustment
units
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PCT/CN2021/109065
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English (en)
French (fr)
Inventor
汪铮铮
刘凯
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to US17/509,138 priority Critical patent/US20220157632A1/en
Publication of WO2022105293A1 publication Critical patent/WO2022105293A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Definitions

  • the present disclosure relates to the technical field of semiconductor manufacturing, and in particular, to a vacuum chamber and a wafer machine.
  • the vacuum chamber (AirLock) is a device for switching between vacuum and atmosphere. Due to the poor discharge of the electrostatic chuck in the cavity of the vacuum chamber and the easy wear and tear of the rubber ring on the robot arm, the positional deviation is prone to occur during the transfer of wafers in or out, resulting in the need to stop the vacuum chamber in order to correct the wafer. round position, which leads to waste of re-machine time, reduces the throughput of the wafer machine, and easily causes wafer defects.
  • a vacuum chamber wherein the vacuum chamber is provided with supporting feet for carrying wafers; wherein, the vacuum chamber further includes a wafer position correction system, the wafer position
  • the calibration system includes a sensing unit, an adjustment unit and a control system; the sensing unit is arranged on the support foot to sense the pressure signal applied by the wafer above, and the sensing unit is distributed in the calibration area the adjusting unit is distributed in the vacuum chamber around the periphery of the calibration area to adjustably push the wafer; the control system is electrically connected to the sensing unit and the adjusting unit respectively , for selecting and controlling part of the adjusting unit to adjust the position of the wafer according to the pressure signal, so that the center of the wafer coincides with the center of the calibration area.
  • a sensing unit is provided on the support feet, and an adjustment unit is provided in the vacuum chamber, according to which the pressure signal applied by the wafer above the wafer is sensed by the sensing unit, and the control system According to the pressure signal, some adjustment units are selected and controlled to adjust the position of the wafer to realize the position correction of the wafer.
  • the present disclosure eliminates the need for manual correction of downtime in the prior art, reduces the waste of re-machine time, improves the productivity of the wafer machine, and avoids product defects such as uneven etching of wafers due to deviation of the center position of the wafer.
  • Another aspect of the embodiments of the present disclosure provides a wafer machine, wherein the wafer machine includes the vacuum chamber provided by the embodiments of the present disclosure.
  • the wafer machine table proposed in the embodiment of the present disclosure can realize the correction of the wafer position without stopping the machine.
  • the present disclosure eliminates the need for manual correction of downtime in the prior art, reduces the waste of re-machine time, improves the productivity of the wafer machine, and avoids product defects such as uneven etching of wafers due to deviation of the center position of the wafer.
  • FIG. 1 is a schematic plan view of a vacuum chamber according to an exemplary embodiment
  • Fig. 2 is a partial schematic view of the vacuum chamber shown in Fig. 1;
  • FIG. 3 is a partial cross-sectional view of the vacuum chamber shown in FIG. 1 .
  • Example embodiments will now be described more fully with reference to the accompanying drawings.
  • Example embodiments can be embodied in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art.
  • the same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.
  • FIG. 1 it representatively shows a schematic plan layout of the vacuum chamber proposed by the present disclosure.
  • the vacuum chamber proposed in the present disclosure is described by taking the application to a wafer tool as an example. It will be easily understood by those skilled in the art that various modifications, additions, substitutions, deletions or other changes can be made to the following specific embodiments in order to apply the related designs of the present disclosure to other types of equipment or other processes , these variations are still within the scope of the principles of the vacuum chamber presented in this disclosure.
  • the vacuum chamber 110 proposed by the present disclosure is provided with a plurality of supporting feet 120 , and the supporting feet 120 are used to carry wafers.
  • the vacuum chamber 110 also contains a wafer position correction system.
  • the vacuum chamber 110 is provided with three support legs 120 as an example for description.
  • FIG. 2 representatively shows a partial schematic diagram of the vacuum chamber 110 capable of embodying the principles of the present disclosure, and specifically shows the structure when one support foot 120 supports the wafer 300 ;
  • FIG. 3 Representatively shows a partial cross-sectional view of the vacuum chamber 110 that can embody the principles of the present disclosure, and specifically shows the structure of an adjustment unit 220 and an adjustment chamber 111 .
  • the structure, connection manner and functional relationship of the main components of the vacuum chamber 110 proposed in the present disclosure will be described in detail below with reference to the above drawings.
  • the wafer position correction system includes three sensing units 210 , three adjusting units 220 and a control system.
  • the three sensing units 210 are respectively disposed on the three supporting feet 120 , and the sensing units 210 can sense the pressure signal applied by the wafer 300 above them.
  • the three sensing units 210 are evenly distributed on the edge of a calibration area S0.
  • the calibration area S0 can be understood as a standard position where the wafer 300 is carried on the support feet 120 . In other words, when the wafer 300 is at the standard position, the edge of the wafer 300 can press the three sensing units 210 at the same time, so that each sensing unit 210 can sense the pressure signal.
  • the calibration area S0 is a circular area with the same shape (same diameter) as the wafer 300
  • the three sensing units 210 are located in a circle at the edge of the calibration area S0
  • the three sensing units 210 are evenly spaced apart on the circular path, that is, at an angle of 120° from each other.
  • the three adjusting units 220 are evenly distributed in the vacuum chamber 110 around the outer periphery of the calibration area S0 , and the adjusting units 220 can adjustably push the wafer 300 .
  • the control system is electrically connected to the sensing unit 210 and the adjusting unit 220, respectively, and the control system can select and control some of the adjusting units 220 to act according to whether each sensing unit 210 senses a pressure signal to push the wafer 300 to adjust its position , so that the center of the wafer 300 coincides with the center O of the calibration area S0 , that is, the position correction of the wafer 300 in the calibration area S0 is realized.
  • the vacuum chamber 110 proposed in the present disclosure can realize the correction of the position of the wafer 300 on the premise of ensuring no shutdown.
  • the present disclosure omits the manual calibration of shutdown in the prior art, reduces the waste of re-machine time, improves the productivity of the wafer machine, and avoids product defects such as uneven etching of the wafer 300 due to the deviation of the center position.
  • the sensing unit 210 may include an insulating pad 211 , two conductive sheets, and an elastic member 214 .
  • the insulating pads 211 are disposed on the top surfaces of the supporting feet 120 .
  • the two conductive sheets are arranged at intervals up and down.
  • the upper conductive sheet is used as the upper conductive sheet 212 in this specification, and the lower conductive sheet is used as the lower conductive sheet 213 .
  • the upper conductive sheet 212 is disposed at the bottom of the insulating pad 211 , and the lower conductive sheet 213 is electrically connected to the control system (eg, through the lead 215 ).
  • the lower end of the elastic member 214 is connected to the lower conductive sheet 213 , and the upper end is spaced apart from the upper conductive sheet 212 . Accordingly, when there is a wafer 300 above the insulating pad 211, the insulating pad 211 is pressed by the wafer 300 to deform downward, and the upper conductive sheet 212 can deform downward along with the insulating pad 211 and contact the upper end of the elastic member 214.
  • the elastic member 214 is electrically connected between the two conductive sheets to form a closed loop, and the control system uses this as the sensing unit 210 to sense the pressure signal.
  • the control system takes this as the sensing unit 210 does not sense a pressure signal.
  • control system may also be electrically connected to the upper conductive sheet 212 , that is, the control system may be electrically connected to one of the two conductive sheets.
  • the elastic member 214 can be connected to the upper conductive sheet 212, the upper end of the elastic member 214 is connected to the upper conductive sheet 212, and the lower end is spaced from the lower conductive sheet 213, that is, one end of the elastic member 214 can be connected to one of the two conductive sheets. one, and the other end is spaced apart from the other of the two conductive sheets.
  • the insulating pad 211 may generally have an upwardly protruding arc-shaped structure. In other embodiments, the insulating pad 211 may also adopt other structures, such as an upwardly protruding cone-shaped structure, a boss-shaped structure, etc., which is not limited to this embodiment.
  • the material of the insulating pad 211 includes rubber. In other embodiments, the material of the insulating pad 211 may also include other insulating materials, which is not limited to this embodiment.
  • the thickness h of the conductive sheet can be 1 mm ⁇ 3 mm, such as 1 mm, 1.5 mm, 2 mm, 3 mm, and the like. In other embodiments, the thickness h of the conductive sheet may also be less than 1 mm, or may be greater than 3 mm, such as 0.9 mm, 3.2 mm, etc., which is not limited to this embodiment.
  • the conductive sheet may be circular, and its radius R may be 1mm ⁇ 5mm, such as 1mm, 2mm, 3mm, 4mm , 5mm, etc. In other embodiments, the radius R of the conductive sheet may also be less than 1 mm, or may be greater than 5 mm, such as 0.5 mm, 6 mm, etc., which is not limited to this embodiment.
  • the material of the conductive sheet can be gold, silver, graphene, etc., which is not limited to this embodiment.
  • the elastic member 214 may be a spring.
  • the elastic member 214 may also adopt other elastic structures, such as elastic sheets, leaf springs, etc., which is not limited to this embodiment.
  • the support foot 120 may be provided with a mounting hole 121 , and the mounting hole 121 is vertically arranged.
  • the insulating pad 211 and the upper conductive sheet 212 are arranged at the top orifice of the mounting hole 121, the lower conductive sheet 213 is arranged at the bottom of the mounting hole 121, and the elastic member 214 is accommodated in the mounting hole 121. inside the hole 121.
  • the sensing unit 210 may also be disposed on the support foot 120 in other manners, for example, the sensing unit 210 may be disposed on the edge of the support foot 120 through a bracket or a mounting seat, which is not limited to this embodiment.
  • the adjustment unit 220 may include a telescopic drive mechanism 221 and a push rod 222 .
  • the telescopic drive mechanism 221 is disposed on the cavity wall of the vacuum chamber 110, and is electrically connected to the control system (eg, through the lead 223).
  • One end of the push rod 222 is connected to the telescopic drive mechanism 221 , and the other end extends horizontally.
  • the push rod 222 is made of insulating material to ensure insulation during pushing against the wafer 300 . Accordingly, the adjustment unit 220 can drive the push rod 222 to move horizontally through the telescopic drive mechanism 221 .
  • the telescopic drive mechanism 221 may include a telescopic sleeve.
  • the telescopic drive mechanism 221 may also include other telescopic structures, such as multi-stage telescopic rods, miniature linear motors, etc., which is not limited to this embodiment.
  • the material of the push rod 222 may include ceramics. Because ceramics have excellent high-temperature mechanical properties, chemical corrosion resistance, high-temperature oxidation resistance, wear resistance and good insulation properties, etc., the push rod 222 made of ceramics can not only ensure insulation properties, but also have relatively stable performance. structure and long service life. In other embodiments, the material of the push rod 222 may also include other insulating materials, which is not limited to this embodiment.
  • the side wall of the vacuum chamber 110 may be provided with three adjustment chambers 111 for three adjustment chambers 111 .
  • the adjustment units 220 are respectively disposed in the three adjustment chambers 111, and the number and arrangement of the adjustment chambers 111 can be adjusted according to the number and arrangement of the adjustment units 220, for example, each adjustment unit 220 can be independently provided in one adjustment chamber inside room 111.
  • a position of the side wall of the vacuum chamber 110 corresponding to the adjustment chamber 111 may be provided with an opening and closing door 112 , and the opening and closing door 112 may be driven by a door driving mechanism, and the door driving mechanism Electrically connected to the control system. Accordingly, when the control system selects the corresponding adjustment unit 220 to act, for example, when the telescopic drive mechanism 221 drives the push rod 222 to extend, the control system simultaneously controls the corresponding door drive mechanism to drive the switch door 112 to open, so that the push rod 222 can be adjusted by Chamber 111 protrudes into vacuum chamber 110 .
  • the present disclosure can provide an independent arrangement space for the adjustment unit 220 through the adjustment chamber 111 , and use the switch door 112 to ensure the airtightness of the adjustment chamber 111 , reduce the impact on the gas environment in the vacuum chamber 110 , and avoid It competes with structures such as the wafer 300 and the supporting feet 120 in the vacuum chamber 110 for arrangement space.
  • control system selects and controls the response time of part of the adjusting unit 220 according to the pressure signal, which may be less than 1s, for example, 0.05s, 0.1s, 0.5s, 1s, and the like.
  • the present disclosure is beneficial to realize the rapid correction of the position of the wafer 300 .
  • the top of the vacuum chamber 110 has a cover plate 113 , and the cover plate 113 may be made of a transparent material.
  • the present disclosure can realize real-time viewing of the internal conditions of the vacuum chamber 110 through the transparent cover plate 113 .
  • the three sensing units 210 are evenly distributed, which is actually based on the distribution of the three supporting feet 120 .
  • each supporting foot 120 is provided with only one sensing unit 210, and the number and distribution of the supporting feet 120 determine the number and distribution of the sensing units 210.
  • the sensing units 210 may only be disposed on some of the supporting feet 120, instead of this Implementation is limited.
  • the vacuum chamber 110 includes three supporting feet 120 , that is, the wafer position correction system includes three sensing units 210 as an example for description.
  • the vacuum chamber 110 may also include other numbers of support feet 120 , such as four, five, eight, and the like.
  • the wafer position correction system may also include other numbers of sensing units 210 , such as two, four, five, six, etc., which are not limited to this embodiment.
  • the wafer position correction system includes three adjustment units 220 as an example for description.
  • the vacuum chamber 110 may also include other numbers of adjustment units 220 , such as two, four, five, six, etc., which are not limited to this embodiment.
  • connection line between the three adjustment units 220 roughly defines a triangular area, that is, the reference area S1 shown in the figure.
  • the shape of the reference area S1 is roughly an equilateral triangle, and the geometric center of the corresponding figure of the reference area S1 (for example, the center of the above-mentioned equilateral triangle) is the same as the The centers O of the calibration regions S0 described above overlap.
  • the corresponding graphics of the above-mentioned reference area S1 defined by each adjustment unit 220 are all regular polygons, and the center of the regular polygon is the center O of the calibration area S0 coincide.
  • the number of the sensing units 210 and the adjusting units 220 is the same as an example for description, for example, there are three. In other embodiments, the numbers of the sensing units 210 and the adjusting units 220 may also be different, which are not limited to this embodiment.
  • each sensing unit 210 and each adjusting unit 220 may be spaced apart Alternate evenly.
  • the control system can The adjusting unit 220 opposite to the sensing unit 210, that is, the adjusting unit 220 located between the other two sensing units 210, performs the adjusting action.
  • the control system can select two adjustment units 220 opposite to the two sensing units 210 respectively, that is, in addition to the one that senses the pressure signal
  • Two adjustment units 220 other than the adjustment unit 220 opposite to the other sensing unit 210 perform adjustment actions. Based on the descriptions of the calibration area S0 and the bearing range of the wafer 300 in this specification, when the wafer 300 is supported on the support feet 120 , it is impossible that all the sensing units 210 do not sense pressure signals, and thus will not be repeated.
  • a plurality of sensing units are respectively arranged on a plurality of supporting feet, and a plurality of adjustment units are arranged in the air lock chamber, according to which the sensing unit senses that the wafer is applied above.
  • the control system selects and controls some adjustment units to adjust the position of the wafer to realize the position correction of the wafer.
  • the present disclosure eliminates the need for manual correction of downtime in the prior art, reduces the waste of re-machine time, improves the productivity of the wafer machine, and avoids product defects such as uneven etching of wafers due to deviation of the center position of the wafer.
  • the wafer bench proposed in the present disclosure includes the vacuum chamber proposed in the present disclosure and described in detail in the above-mentioned embodiments.
  • the wafer machine table proposed in the present disclosure by using the vacuum chamber proposed in the present disclosure, can realize the correction of the wafer position without stopping the machine.
  • the present disclosure eliminates the need for manual correction of downtime in the prior art, reduces the waste of re-machine time, improves the productivity of the wafer machine, and avoids product defects such as uneven etching of wafers due to deviation of the center position of the wafer.

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本公开提出一种真空腔室及晶圆机台，真空腔室内设置有用以承载晶圆的支撑脚；其中，真空腔室还包含晶圆位置校正系统，晶圆位置校正系统包含感测单元、调节单元以及控制系统；感测单元设置于支撑脚，用以感测晶圆于上方施加的压力信号，感测单元分布于一校准区域的边缘；调节单元围绕校准区域的外周分布于真空腔室，用以可调节地推动晶圆；控制系统分别电连接于感测单元和调节单元，用以根据压力信号，选择并控制部分调节单元调节晶圆的位置，以使晶圆的中心与校准区域的中心重合。

Description

真空腔室及晶圆机台
相关申请的交叉引用
本公开要求基于2020年11月18日提交的申请号为202011294173.0的中国申请“真空腔室及晶圆机台”的优先权，通过援引将其全部内容并入本文中。
技术领域
本公开涉及半导体制造技术领域，特别涉及一种真空腔室及晶圆机台。
背景技术
在晶圆机台中，真空腔室(AirLock)是用于对真空和大气转换的装置。由于真空腔室的腔体内的静电卡盘放电不良以及机械手臂上的橡胶圈容易磨损等原因，晶圆传进或者传出的过程中容易发生位置偏移，导致真空腔室需要停机以便校正晶圆位置，进而导致复机时间的浪费，降低晶圆机台的产能，而且容易引起晶圆缺陷。
发明内容
本公开实施例的一个方面，提供一种真空腔室，所述真空腔室内设置有用以承载晶圆的支撑脚；其中，所述真空腔室还包含晶圆位置校正系统，所述晶圆位置校正系统包含感测单元、调节单元以及控制系统；所述感测单元设置于所述支撑脚，用以感测所述晶圆于上方施加的压力信号，所述感测单元分布于校准区域的边缘；所述调节单元围绕所述校准区域的外周分布于所述真空腔室，用以可调节地推动所述晶圆；所述控制系统分别电连接于所述感测单元和所述调节单元，用以根据所述压力信号，选择并控制部分所述调节单元调节所述晶圆的位置，以使所述晶圆的中心与所述校准区域的中心重合。
由上述技术方案可知，本公开实施例提出的真空腔室的优点和积极效果在于：
本公开实施例提出的真空腔室，通过在支撑脚上设置感测单元，并在真空腔室设置调节单元，据此通过感测单元感测晶圆于上方施加的压力信号，并通过控制系统根据压力信号，选择并控制部分调节单元调节晶圆的位置，实现对晶圆的位置校正。通过上述设计，本公开实施例提出的真空腔室能够在保证不停机的前提下，实现对晶圆位置的校正。本公开省去了现有技术的停机手动校正，减少复机时间的浪费，提高晶圆机台的产能，避免晶圆由于中心位置偏移而产生的蚀刻不均匀等产品缺陷。
本公开实施例的另一个方面，提供一种晶圆机台；其中，所述晶圆机台包含本公开实施例提出的真空腔室。
由上述技术方案可知，本公开实施例提出的晶圆机台的优点和积极效果在于：
本公开实施例提出的晶圆机台，通过采用本公开提出的真空腔室，能够保证不停机的前提下，实现对晶圆位置的校正。本公开省去了现有技术的停机手动校正，减少复机时间的浪费，提高晶圆机台的产能，避免晶圆由于中心位置偏移而产生的蚀刻不均匀等产品缺陷。
附图说明
图1是根据一示例性实施方式示出的一种真空腔室的平面布置示意图；
图2是图1示出的真空腔室的部分示意图；
图3是图1示出的真空腔室的局部剖视图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本公开将全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。
参阅图1，其代表性地示出了本公开提出的真空腔室的平面布置示意图。在该示例性实施方式中，本公开提出的真空腔室是以应用于晶圆机台为例进行说明的。本领域技术人员容易理解的是，为将本公开的相关设计应用于其他类型的设备或其他工艺中，而对下述的具体实施方式做出多种改型、添加、替代、删除或其他变化，这些变化仍在本公开提出的真空腔室的原理的范围内。
如图1所示，在本实施方式中，本公开提出的真空腔室110内设置有多个支撑脚120，这些支撑脚120用以承载晶圆。真空腔室110还包含晶圆位置校正系统。其中，本实施方式中是以真空腔室110内设置有三个支撑脚120为例进行说明。配合参阅图2和图3，图2中代表性地示出了能够体现本公开原理的真空腔室110的部分示意图，具体示出了一个支撑脚120承载晶圆300时的结构；图3中代表性地示出了能够体现本公开原理的真空腔室110的局部剖视图，具体示出了一个调节单元220与一个调节腔室111的结构。以下将结合上述附图，对本公开提出的真空腔室110的各主要组成部分的结构、连接方式和功能关系进行详细说。
如图1至图3所示，在本实施方式中，晶圆位置校正系统包含三个感测单元210、三个调节单元220以及控制系统。具体而言，三个感测单元210分别设置在三个支撑脚120上，感测单元210能够感测晶圆300在其上方施加的压力信号。三个感测单元210均匀分布于一校准区域S0的边缘。具体而言，该校准区域S0可以理解为晶圆300承载于支撑脚120上的标准位置。换言之，当晶圆300位于该标准位置时，晶圆300的边缘恰好能够对三个感测单元210同时施压，而使各感测单元210均能够感测到压力信号。以晶圆300的形状为圆形为例，该校准区域S0即为与晶圆300的形状相同(直径相同)的圆形区域，则三个感测单元210位于该校准区域S0边缘的圆形路径上，且三个感测单元210在该圆形路径上间隔均匀地分布，即相互间隔120°的角度。三个调节单元220围绕校准区域S0的外周均匀分布于真空腔室110，调节单元220能够可调节地推动晶圆300。控制系统分别电连接于感测单元210和调节单元220，控制系统能够根据各感测单元210是否感测到压力信号，来相应选择并控制部分调节单元220动作，推动晶圆300以调节其位置，从而使晶圆300的中心与校准区域S0的中心O重合，即实现晶圆300之于校准区域S0的位置校正。通过上述设计，本公开提出的真空腔室110能够在保证不停机的前提下，实现对晶圆300位置的校正。本公开省去了现有技术的停机手动校正，减少复机时间的浪费，提高晶圆机台的产能，避免晶圆300由于中心位置偏移而产生的蚀刻不均匀等产品缺陷。
可选地，如图2所示，在本实施方式中，感测单元210可以包含绝缘垫211、两个导电片以及弹性件214。具体而言，绝缘垫211设置于支撑脚120的顶面。两个导电片上下间隔布置，为了便于描述，本说明书中以位于上方的导电排为上导电片212，并以位于下方的导电片为下导电片213。其中，上导电片212设置于绝缘垫211底部，下导电片213电连接于(例如通过引线215)控制系统。弹性件214下端连接于下导电片213，上端与上导电片212相间隔。据此，当绝缘垫211上方有晶圆300存在，则绝缘垫211受到晶圆300压迫产生向下的形变，上导电片212能够随绝缘垫211产生向下形变并与弹性件214上端接触，使弹性件214在两个导电片之间形成电连接而形成闭合回路，控制系统以此作为感测单元210感测到压力信号。反之，若晶圆300存在偏移，相应位置的感测单元210的绝缘垫211上方无晶圆300存在，则上导电片212不会产生形变且不会与弹性件214上端接触，则两个导电片之间未形成电连接而未形成闭合回路，控制系统以此作为感测单元210未感测到压力信号。
在其他实施方式中，控制系统亦可与上导电片212电连接，即，控制系统可以与两个导电片的其中之一电连接。再者，弹性件214可以连接于上导电片212，则弹性件214上 端连接于上导电片212，下端与下导电片213相间隔，即，弹性件214一端可以连接于两个导电片的其中之一，另一端则与两个导电片的其中另一相间隔。
进一步地，如图2所示，基于感测单元210包含绝缘垫211的设计，在本实施方式中，绝缘垫211可以大致呈向上凸出的弧面状结构。在其他实施方式中，绝缘垫211亦可采用其他结构，例如向上凸出的锥面状结构、凸台状结构等，并不以本实施方式为限。
进一步地，如图2所示，基于感测单元210包含绝缘垫211的设计，在本实施方式中，绝缘垫211的材质包含橡胶。在其他实施方式中，绝缘垫211的材质还可以包含其他绝缘材料，并不以本实施方式为限。
进一步地，如图2所示，基于感测单元210包含导电片的设计，在本实施方式中，导电片的厚度h可以为1mm～3mm，例如1mm、1.5mm、2mm、3mm等。在其他实施方式中，导电片的厚度h亦可小于1mm，或可大于3mm，例如0.9mm、3.2mm等，并不以本实施方式为限。
进一步地，如图2所示，基于感测单元210包含导电片的设计，在本实施方式中，导电片可以为圆形，其半径R可以为1mm～5mm，例如1mm、2mm、3mm、4mm、5mm等。在其他实施方式中，导电片的半径R亦可小于1mm，或可大于5mm，例如0.5mm、6mm等，并不以本实施方式为限。
进一步地，如图2所示，基于感测单元210包含导电片的设计，在本实施方式中，导电片的材料可以为金、银、石墨烯等，并不以本实施方式为限。
进一步地，如图2所示，基于感测单元210包含弹性件214的设计，在本实施方式中，弹性件214可以为弹簧。在其他实施方式中，弹性件214亦可采用其他弹性结构，例如弹片、板簧等，并不以本实施方式为限。
进一步地，如图2所示，基于感测单元210包含绝缘垫211、导电片以及弹性件214的设计，在本实施方式中，支撑脚120可以开设有安装孔121，该安装孔121沿竖直方向布置并开口于支撑脚120的顶面，绝缘垫211和上导电片212设置在安装孔121的顶部孔口，下导电片213设置在安装孔121的底部，弹性件214容置于安装孔121内。在其他实施方式中，亦可采用其他方式将感测单元210设置在支撑脚120上，例如在支撑脚120边缘通过支架或者安装座设置感测单元210，并不以本实施方式为限。
可选地，如图3所示，在本实施方式中，调节单元220可以包含伸缩驱动机构221以及推杆222。具体而言，伸缩驱动机构221设置于真空腔室110的腔壁，并电连接于(例如通过引线223)控制系统。推杆222一端连接于伸缩驱动机构221，另一端水平延伸， 推杆222的材质包含绝缘材料，以保证在推抵晶圆300过程中的绝缘性。据此，调节单元220能够通过伸缩驱动机构221驱动推杆222水平移动。
进一步地，如图3所示，基于调节单元220包含伸缩驱动机构221的设计，在本实施方式中，伸缩驱动机构221可以包含伸缩式套筒。在其他实施方式中，伸缩驱动机构221亦可包含其他伸缩结构，例如多级伸缩杆、微型直线电机等，并不以本实施方式为限。
进一步地，基于调节单元220包含推杆222的设计，在本实施方式中，推杆222的材质可以包含陶瓷。由于陶瓷具有优异的高温机械性能、耐化学腐蚀性能、耐高温氧化性能、耐磨损性能以及良好的绝缘性能等，因此采用陶瓷为材料的推杆222能够在保证绝缘性能的同时，具有较稳定的结构和较长的使用寿命。在其他实施方式中，推杆222的材质亦可包含其他绝缘材料，并不以本实施方式为限。
进一步地，如图3所示，基于调节单元220包含伸缩驱动机构221以及推杆222的设计，在本实施方式中，真空腔室110侧壁可以设置有三个调节腔室111，以供三个调节单元220分别设置于三个调节腔室111内，调节腔室111的数量和布置形式可以根据调节单元220的数量和布置形式调整，例如可以使每个调节单元220均独立设置于一个调节腔室111内。在此基础上，对于每一个调节腔室111而言，真空腔室110侧壁的对应于调节腔室111的位置可以设置有开关门112，开关门112可以由门驱动机构驱动，门驱动机构电连接于控制系统。据此，当控制系统选择相应的调节单元220动作时，例如伸缩驱动机构221驱动推杆222伸出时，控制系统同时控制对应的门驱动机构驱动开关门112开启，以供推杆222由调节腔室111伸出进入真空腔室110。通过上述设计，本公开能够通过调节腔室111为调节单元220提供独立的布置空间，并利用开关门112保证调节腔室111的密闭性，减少对真空腔室110内的气体环境的影响，避免与真空腔室110内的晶圆300、支撑脚120等结构争抢布置空间。
可选地，在本实施方式中，控制系统根据压力信号选择并控制部分调节单元220的反应时间可以小于1s，例如0.05s、0.1s、0.5s、1s等。通过上述设计，本公开有利于实现对晶圆300位置的快速校正。
可选地，如图3所示，在本实施方式中，真空腔室110顶部具有盖板113，盖板113可以由透明材质制成。通过上述设计，本公开能够通过透明盖板113实现对真空腔室110内部情况的实时查看。
需说明的是，如图1所示，在本实施方式中，三个感测单元210均匀分布，实际上是以三个支撑脚120均与分布为基础。换言之，每个支撑脚120上均设置且仅设置有一个感 测单元210，则支撑脚120的数量和分布形式，决定了感测单元210的数量和分布形式。在其他实施方式中，根据不同的校正和感测需要，对于多个感测单元210和多个支撑脚120而言，感测单元210亦可仅设置在部分支撑脚120上，并不以本实施方式为限。
需说明的是，如图1所示，本实施方式中是以真空腔室110包含三个支撑脚120，即晶圆位置校正系统包含三个感测单元210为例进行说明。在其他实施方式中，真空腔室110亦可包含其他数量的支撑脚120，例如四个、五个、八个等。在此基础上，晶圆位置校正系统亦可包含其他数量的感测单元210，例如两个、四个、五个、六个等，均不以本实施方式为限。
需说明的是，如图1所示，本实施方式中是以晶圆位置校正系统包含三个调节单元220为例进行说明。在其他实施方式中，真空腔室110亦可包含其他数量的调节单元220，例如两个、四个、五个、六个等，并不以本实施方式为限。
另外，如图1所示，在本实施方式中，三个调节单元220之间的连线大致定义一三角形区域，即图示的参照区域S1。其中，由于三个调节单元220采用均匀分布的布置形式，因此该参照区域S1的形状大致呈等边三角形，且该参照区域S1的对应图形的几何中心(例如上述等边三角形的中心)是与上述校准区域S0的中心O重合。在其他实施方式中，当调节单元220的数量为三个以上时，各调节单元220定义的上述参照区域S1的对应图形均为正多边形，且该正多边形的中心是与校准区域S0的中心O重合。
需说明的是，如图1所示，本实施方式中是以感测单元210与调节单元220的数量相同为例进行说明，例如均为三个。在其他实施方式中，感测单元210与调节单元220的数量亦可不相同，并不以本实施方式为限。
进一步地，如图1所示，基于感测单元210与调节单元220的数量相同的设计，在本实施方式中，在校准区域S0的周向上，各感测单元210与各调节单元220可以间隔均匀地交替布置。在此基础上，在本实施方式中，以感测单元210和调节单元220均为三个为例，当某一个感测单元210未感测到压力信号时，则控制系统可以选择与该感测单元210相对的调节单元220，即位于另两个感测单元210之间的调节单元220，进行调节动作。又如，当某两个感测单元210未感测到压力信号时，则控制系统可以选择分别与这两个感测单元210相对的两个调节单元220，即除与感测到压力信号的另一个感测单元210相对的调节单元220以外的两个调节单元220，进行调节动作。基于本说明书中关于校准区域S0和晶圆300承载范围的说明，晶圆300承载于支撑脚120时，不可能出现全部感测单元210未感测到压力信号的情况，因此不予赘述。
综上所述，本公开提出的真空腔室多个支撑脚上分别设置多个感测单元，并在气锁腔室设置多个调节单元，据此通过感测单元感测晶圆于上方施加的压力信号，并通过控制系统根据压力信号，选择并控制部分调节单元调节晶圆的位置，实现对晶圆的位置校正。通过上述设计，本公开提出的真空腔室能够在保证不停机的前提下，实现对晶圆位置的校正。本公开省去了现有技术的停机手动校正，减少复机时间的浪费，提高晶圆机台的产能，避免晶圆由于中心位置偏移而产生的蚀刻不均匀等产品缺陷。
基于上述对本公开提出的气锁腔室的一示例性实施方式的详细说明，以下将对本公开提出的晶圆机台的一示例性实施方式进行说明。
在本实施方式中，本公开提出的晶圆机台包含本公开提出的并在上述实施方式中详细说明的真空腔室。
综上所述，本公开提出的晶圆机台，通过采用本公开提出的真空腔室，能够保证不停机的前提下，实现对晶圆位置的校正。本公开省去了现有技术的停机手动校正，减少复机时间的浪费，提高晶圆机台的产能，避免晶圆由于中心位置偏移而产生的蚀刻不均匀等产品缺陷。
虽然已参照几个典型实施例描述了本公开，但应当理解，所用的术语是说明和示例性、而非限制性的术语。由于本公开能够以多种形式具体实施而不脱离公开的精神或实质，所以应当理解，上述实施例不限于任何前述的细节，而应在随附权利要求所限定的精神和范围内广泛地解释，因此落入权利要求或其等效范围内的全部变化和改型都应为随附权利要求所涵盖。

Claims (14)

  1. 一种真空腔室，所述真空腔室内设置有用以承载晶圆的支撑脚；其中，所述真空腔室还包含晶圆位置校正系统，所述晶圆位置校正系统包含：
    感测单元，设置于所述支撑脚，用以感测所述晶圆于上方施加的压力信号，所述感测单元分布于校准区域的边缘；
    调节单元，围绕所述校准区域的外周分布于所述真空腔室，用以可调节地推动所述晶圆；以及
    控制系统，分别电连接于所述感测单元和所述调节单元，用以根据所述压力信号，选择并控制部分所述调节单元调节所述晶圆的位置，以使所述晶圆的中心与所述校准区域的中心重合。
  2. 根据权利要求1所述的真空腔室，其中，所述感测单元包含：
    绝缘垫，设置于所述支撑脚的顶面；
    两个导电片，分别为上导电片和下导电片，所述上导电片设置于所述绝缘垫底部，所述下导电片位于所述上导电片下方，其中一个所述导电片电连接于所述控制系统；以及
    弹性件，一端连接于一个所述导电片，另一端与另一个所述导电片相间隔；
    其中，所述上导电片能在所述绝缘垫受压时随其产生向下形变，使弹性件连接于所述两个导电片而形成闭合回路，所述控制系统以此作为所述感测单元感测到的所述压力信号。
  3. 根据权利要求2所述的真空腔室，其中，所述绝缘垫呈向上凸出的弧面状结构。
  4. 根据权利要求2所述的真空腔室，其中，所述绝缘垫的材质包含橡胶。
  5. 根据权利要求2所述的真空腔室，其中，所述导电片的厚度为1mm～3mm。
  6. 根据权利要求2所述的真空腔室，其中，所述导电片的半径1mm～5mm。
  7. 根据权利要求1所述的真空腔室，其中，所述调节单元包含：
    伸缩驱动机构，设置于所述真空腔室的腔壁，并电连接于所述控制系统；以及
    推杆，一端连接于所述伸缩驱动机构，另一端水平延伸，所述推杆的材质包含绝缘材料；
    其中，所述调节单元通过所述伸缩驱动机构驱动所述推杆水平移动。
  8. 根据权利要求7所述的真空腔室，其中，所述真空腔室侧壁设置有调节腔室，所述调节单元设置于所述调节腔室内，所述真空腔室侧壁的对应于各所述调节腔室的位置分别设置有开关门，所述开关门由门驱动机构驱动，所述门驱动机构电连接于所述控制系统。
  9. 根据权利要求1所述的真空腔室，其中，所述真空腔室顶部具有盖板，所述盖板由透明材质制成。
  10. 根据权利要求1～9任一项所述的真空腔室，其中，所述晶圆位置校正系统包含至少三个所述感测单元。
  11. 根据权利要求1～9任一项所述的真空腔室，其中，所述晶圆位置校正系统包含至少三个所述调节单元。
  12. 根据权利要求1～9任一项所述的真空腔室，其中，所述感测单元与所述调节单元的数量相同。
  13. 根据权利要求12所述的真空腔室，其中，所述晶圆位置校正系统包含至少两个所述感测单元以及至少两个所述调节单元；其中，在所述校准区域的周向上，各所述感测单元与各所述调节单元间隔均匀地交替布置。
  14. 一种晶圆机台，其中，所述晶圆机台包含权利要求1～13任一项所述的真空腔室。
PCT/CN2021/109065 2020-11-18 2021-07-28 真空腔室及晶圆机台 Ceased WO2022105293A1 (zh)

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