WO2022103115A1 - 파장 변환 물질을 포함하는 공진 공동 구조체 - Google Patents
파장 변환 물질을 포함하는 공진 공동 구조체 Download PDFInfo
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- WO2022103115A1 WO2022103115A1 PCT/KR2021/016222 KR2021016222W WO2022103115A1 WO 2022103115 A1 WO2022103115 A1 WO 2022103115A1 KR 2021016222 W KR2021016222 W KR 2021016222W WO 2022103115 A1 WO2022103115 A1 WO 2022103115A1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 88
- 239000000463 material Substances 0.000 title claims abstract description 88
- 230000005284 excitation Effects 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims description 14
- 238000004088 simulation Methods 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 238000010521 absorption reaction Methods 0.000 description 13
- 238000000985 reflectance spectrum Methods 0.000 description 13
- 238000002834 transmittance Methods 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000000411 transmission spectrum Methods 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Definitions
- Embodiments of the present invention relate to a resonant cavity structure comprising a wavelength converting material such as, for example, a phosphor.
- a phosphor for color conversion may be essentially used in a white LED.
- a phosphor is a material that absorbs high energy (ie, short wavelength) light and emits low energy (ie, long wavelength) light.
- high energy ie, short wavelength
- low energy ie, long wavelength
- an object of the present invention is to provide an optical structure capable of improving the color conversion efficiency of various wavelength conversion materials.
- an object of the present invention is to provide a resonant cavity structure including a wavelength conversion material.
- a resonant cavity structure includes: an upper layer in which first dielectric layers and second dielectric layers having different refractive indices are alternately stacked; a lower layer in which the first dielectric layer and the second dielectric layer are alternately stacked; and a cavity formed between the upper layer and the lower layer, wherein the cavity absorbs light having a first wavelength and emits light having a second wavelength different from the first wavelength. It may be designed to cause resonance in the cavity at the first wavelength, and may be provided so that the excitation light of the first wavelength is incident from a lower portion of the lower layer.
- the resonant cavity structure including a wavelength conversion material eg, a phosphor
- a wavelength conversion material eg, a phosphor
- the resonant cavity structure can be fabricated by repeating thin film coatings of dielectric materials, making the process easy and mass-produced.
- 1 is a view for explaining excitation light, transmitted light, and color conversion light for a general wavelength conversion material.
- FIG. 2 is a view for explaining excitation light, transmitted light, and color conversion light for the resonance cavity structure according to an embodiment of the present invention.
- 3A and 3B are views for explaining a resonant cavity structure according to another embodiment of the present invention.
- FIG. 4 shows a schematic structure of a distributed Bragg reflector and an example of its reflectance spectrum S1.
- FIG. 5 shows a schematic structure of a resonant cavity structure and an example of a reflectance spectrum thereof according to an embodiment of the present invention.
- FIG. 6 shows an environment for simulating transmittance, absorption, and reflectance of a resonant cavity structure according to an embodiment of the present invention.
- FIG. 7 is a simulation result of transmittance, absorption, and reflectance of the resonant cavity structure in the same environment as in FIG. 6 .
- FIG. 9 shows a schematic structure of a resonant cavity structure according to another embodiment of the present invention.
- FIG. 10 shows a schematic structure of a resonant cavity structure according to another embodiment of the present invention.
- a resonant cavity structure includes: an upper layer in which first dielectric layers and second dielectric layers having different refractive indices are alternately stacked; a lower layer in which the first dielectric layer and the second dielectric layer are alternately stacked; and a cavity formed between the upper layer and the lower layer, wherein the cavity absorbs light having a first wavelength and emits light having a second wavelength different from the first wavelength. It may be designed to cause resonance in the cavity at the first wavelength, and may be provided so that the excitation light of the first wavelength is incident from a lower portion of the lower layer.
- the second wavelength may be located outside a stopband of the resonant cavity structure.
- the second wavelength may be longer than the first wavelength.
- the stop band of the resonant cavity structure may be formed in a band having a shorter wavelength than the second wavelength.
- the refractive index of the first dielectric layer may be less than the refractive index of the cavity including the wavelength converting material, and the refractive index of the second dielectric layer may be greater than the refractive index of the cavity including the wavelength converting material.
- the layer positioned at the bottom of the lower layer may be the first dielectric layer.
- the layer positioned on top of the upper layer may be the second dielectric layer.
- the dielectric layer in contact with the cavity in the upper layer and the dielectric layer in contact with the cavity in the lower layer are the same dielectric layers, and the thickness of the cavity is n/(2n c ) of the length of the first wavelength multiplier (n is a natural number and n c is the refractive index of the cavity).
- the dielectric layer in contact with the cavity in the upper layer and the dielectric layer in contact with the cavity in the lower layer are different dielectric layers, and the thickness of the cavity is n/(4n c ) of the length of the first wavelength multiplier (n is odd and n c is the refractive index of the cavity).
- the resonant cavity structure may further include a reflective layer disposed under the lower layer and passing the light of the first wavelength and reflecting the light of the second wavelength.
- the cavity may include: a first wavelength conversion material that absorbs light of the first wavelength and emits light of the second wavelength; and a second wavelength conversion material absorbing light of the first wavelength to emit light of a third wavelength.
- the cavity includes a first layer in which the first wavelength converting material is distributed, a second layer in which the second wavelength converting material is distributed, and a second layer disposed between the first and second layers. 3 dielectric layers.
- the thickness of the cavity may be gradually changed along one direction crossing the thickness direction of the cavity.
- the thickness of the cavity may be periodically changed along one direction intersecting the thickness direction.
- the thickness of the first dielectric layer or the thickness of the second dielectric layer may be gradually changed as the number of alternating times with respect to the upper layer or the lower layer increases.
- the refractive index of the first dielectric layer or the refractive index of the second dielectric layer may be gradually changed as the number of alternating times with respect to the upper layer or the lower layer increases.
- the upper surface or the lower surface of the resonance cavity structure may include a concave portion or a convex portion.
- an upper surface or a lower surface of the resonance cavity structure may include a plurality of concave portions or a plurality of convex portions, and the plurality of concave portions or the plurality of convex portions may be regularly arranged.
- a light emitting structure includes an upper layer in which first and second dielectric layers having different refractive indices are alternately stacked, and a lower layer in which the first dielectric layer and the second dielectric layer are alternately stacked. and a resonant cavity structure including a cavity formed between the upper layer and the lower layer; and a light emitting structure or a light emitting device disposed under the lower layer and generating excitation light of a first wavelength, wherein the cavity absorbs light having the first wavelength and has a second wavelength different from the first wavelength and a wavelength conversion material emitting light having a, wherein the resonance cavity structure may be designed such that resonance occurs in the cavity at the first wavelength.
- the second wavelength may be located outside a stopband of the resonant cavity structure.
- the second wavelength may be longer than the first wavelength.
- the stop band of the resonant cavity structure may be formed in a band having a shorter wavelength than the second wavelength.
- the refractive index of the first dielectric layer is less than the refractive index of the cavity
- the refractive index of the second dielectric layer is greater than the refractive index of the cavity
- the lowermost layer of the lower layer may be the first dielectric layer.
- the refractive index of the first dielectric layer is less than the refractive index of the cavity
- the refractive index of the second dielectric layer is greater than the refractive index of the cavity
- the uppermost layer of the upper layer may be the second dielectric layer.
- the cavity may include: a first wavelength conversion material that absorbs light of the first wavelength and emits light of the second wavelength; and a second wavelength conversion material absorbing light of the first wavelength to emit light of a third wavelength.
- the cavity includes a first layer in which the first wavelength converting material is distributed, a second layer in which the second wavelength converting material is distributed, and a second layer disposed between the first and second layers. 3 dielectric layers.
- FIG. 1 is a view for explaining excitation light EL, transmitted light TL′, and color conversion light CL′ with respect to a general wavelength conversion material P
- FIG. 2 is an exemplary embodiment of the present invention. It is a view for explaining the excitation light EL, the transmitted light TL, and the color conversion light CL of the resonance cavity structure 100 .
- the wavelength conversion material P when excitation light (EL) is irradiated to a general wavelength conversion material P, the wavelength conversion material P absorbs a portion of the excitation light EL and thus the color conversion light (color-) converted light, CL').
- the wavelength conversion material P may be, for example, a phosphor that absorbs excitation light EL of high energy (ie, short wavelength) and emits color conversion light CL′ of low energy (ie, long wavelength).
- the present invention is not limited thereto, and the wavelength conversion material P may be a nanoparticle that up-converts the excitation light EL of a long wavelength into color conversion light CL′ of a short wavelength.
- the color conversion light CL' may be emitted in all directions. Meanwhile, light remaining after being absorbed by the wavelength conversion material P among the excitation light EL may be transmitted as transmitted light TL′.
- the resonance cavity structure 100 is formed between the upper layer 10 , the lower layer 30 , and the upper layer 10 and the lower layer 30 , and the wavelength and a cavity 20 containing the conversion material P.
- the wavelength conversion material P may absorb light having a first wavelength and emit light having a second wavelength longer or shorter than the first wavelength.
- the second wavelength may be longer than the first wavelength.
- the wavelength conversion material P is an upconverting nanoparticle, the second wavelength may be shorter than the first wavelength.
- the wavelength of the excitation light that excites the wavelength conversion material P will be referred to as a first wavelength
- the wavelength of the color conversion light emitted from the wavelength conversion material will be referred to as a second wavelength.
- the resonant cavity structure 100 may be designed so that resonance occurs at the first wavelength.
- each of the upper layer 10 and the lower layer 30 may be a reflector that reflects light in a predetermined range including the first wavelength, and the thickness of the cavity 20 may satisfy a predetermined condition.
- resonance of the light of the first wavelength may occur in the cavity 20 .
- the wavelength conversion material P included in the cavity 20 absorbs a part of the excitation light EL to emit the color conversion light CL. there is.
- the color conversion light CL may be emitted in all directions.
- Light remaining after being absorbed by the wavelength conversion material P among the excitation light EL may be transmitted out of the resonance cavity structure 100 as transmitted light TL.
- the excitation light EL and the transmitted light TL may have the above-described first wavelength, and the color conversion light CL may have the second wavelength.
- the excitation light EL may be more absorbed by the resonance cavity structure 100 including the wavelength conversion material P than (P).
- the absorptivity for the first wavelength of the resonant cavity structure 100 including the wavelength conversion material P may be higher than that of the general wavelength conversion material P for the first wavelength (absorptivity).
- the intensity of the color conversion light CL emitted from the resonance cavity structure 100 including the wavelength conversion material P is greater than the intensity of the color conversion light CL′ emitted from the general wavelength conversion material P.
- the intensity of the transmitted light TL in the resonance cavity structure 100 including the wavelength conversion material P may be smaller than the intensity of the transmitted light TL′ in the general wavelength conversion material P.
- the resonance cavity structure 100 is white light.
- a part of the blue light may exit the resonance cavity structure 100 as transmitted light TL, and the other part is absorbed by the phosphor and exits the resonance cavity structure 100 as the color conversion light CL of yellow or red light.
- each of the upper layer 10 and the lower layer 30 may be a distributed Bragg reflector (DBR).
- DBR distributed Bragg reflector
- the surface of the resonance cavity structure 100 is illustrated as having a planar structure, but the present invention is not limited thereto, and as another embodiment, the upper surface or the lower surface of the resonance cavity structure 100 is concave. It may be formed in a shape including a portion or a convex portion.
- the upper or lower surface of the resonance cavity structure 100 may include a plurality of concave portions or a plurality of convex portions, and may have a shape in which the plurality of concave portions or the plurality of convex portions are regularly arranged.
- 3A and 3B are views for explaining the resonance cavity structure 100 according to another embodiment of the present invention.
- the resonance cavity structure 100 has an upper layer 10, a lower layer 30, and an upper layer 10 and a lower layer (the same as the resonance cavity structure 100 of FIG. 2). 30 , and includes a cavity 20 including a wavelength conversion material P, and may further include a substrate 1 provided on the upper layer 10 or the lower layer 20 .
- the substrate 1 is disposed between another device, for example, a device such as a light emitting device, and the resonance cavity structure 100 , and may be made of a transmissive material.
- the substrate 1 may be made of a glass material.
- the thicknesses of the upper layer 10 and the lower layer 30 may be different from those of the resonance cavity structure of FIG. 2 .
- the thickness of the lower layer 30 close to the excitation light EL may be thinner than that of the upper layer 10 .
- the substrate 1 may be disposed adjacent to the lower layer 30 as shown in FIG. 3A or disposed adjacent to the upper layer 10 as shown in FIG. 3B .
- the distributed Bragg reflector may have a structure in which first dielectric layers 11 and second dielectric layers 12 having different refractive indices are alternately stacked.
- each of the upper layer 10 and the lower layer 30 may be formed of a distributed Bragg reflector.
- Each of the upper layer 10 and the lower layer 30 may have a structure in which a first dielectric layer 11 and a second dielectric layer 12 having different refractive indices are alternately stacked.
- each of the upper layer 10 and the lower layer 30 may have a structure in which a refractive index is periodically changed.
- Distributed Bragg reflectors can be designed to reflect light in a specific wavelength range.
- the wavelength range (or frequency range) that is reflected is called the stopband.
- Light having a wavelength within the stop band is prohibited from propagating in the distributed Bragg reflector.
- the upper layer 10 and the lower layer 30 may be designed to have a stop band including the first wavelength.
- a stop band is formed at the first wavelength by adjusting the refractive index and thickness of the first dielectric layer 11 and the refractive index and the thickness of the second dielectric layer 12. can do.
- the thickness of the first dielectric layer 11 or the thickness of the second dielectric layer 12 may be gradually changed with an increase in the number of alternations for the upper layer 10 or the lower layer 30 .
- the first dielectric layer 11 and the second dielectric layer 12 are alternately stacked, but the alternating layers are not stacked with the same thickness, but the thickness of each layer along the direction in which the number of times of alternating is increased. may be designed to become thinner or thicker.
- the refractive index of the first dielectric layer 11 or the refractive index of the second dielectric layer 12 may be gradually changed with respect to the upper layer 10 or the lower layer 30 as the number of alternating times increases.
- FIG. 3 shows a situation in which there is no light transmitted through the upper portions of the DBRs 10 and 30 when the excitation light EL is irradiated from the lower portions of the DBRs 10 and 30 toward the DBRs 10 and 30 .
- the reflectance spectrum S1 of the DBRs 10 and 30 is, when the excitation light EL is irradiated from the lower part of the DBRs 10 and 30 toward the DBRs 10 and 30, in the plane P1 of the lower part of the DBRs 10 and 30. It is a graph that simulates the spectrum of light intensity.
- FIG. 5 shows an example of a schematic structure of a resonant cavity structure 100 and a reflectance spectrum S2 thereof according to an embodiment of the present invention.
- a lower layer 30 in which a first dielectric layer 11 and a second dielectric layer 12 are alternately stacked, and a cavity 20 formed between the upper layer 10 and the lower layer 30, the cavity 20 includes wavelength converting materials.
- the wavelength conversion material P may absorb light having a first wavelength and emit light having a second wavelength longer or shorter than the first wavelength.
- the resonance cavity structure 100 may be designed so that resonance occurs in the cavity 20 at the first wavelength.
- the resonant cavity structure 100 may improve the color conversion efficiency of the wavelength conversion material P from the first wavelength to the second wavelength.
- the resonance cavity structure 100 can be applied to various light emitting devices by setting the first wavelength and the second wavelength as needed and using the excitation light EL and the wavelength conversion material P suitable therefor.
- the resonant cavity structure 100 including a wavelength conversion material (eg, a phosphor) that absorbs excitation light EL of blue light and emits yellow light or red light may be applied to a white LED.
- a wavelength conversion material eg, a phosphor
- the present invention is not limited thereto.
- the resonant cavity structure 100 includes a cavity 20 between the upper layer 10 and the lower layer 30 , thereby generating strong resonance at a specific wavelength.
- optical resonance may occur at a specific wavelength determined based on the thickness T and refractive index of the cavity 20 . A detailed description of the condition of the thickness T of the cavity 20 for optical resonance to occur at the first wavelength will be described later.
- the thickness T of the cavity 20 may be determined such that resonance occurs in the cavity 20 at a first wavelength that is an absorption wavelength of the wavelength conversion material P.
- resonance occurs in the cavity 20 at the first wavelength, at least a portion of the light of the first wavelength may be trapped in the cavity 20 . Accordingly, the absorption rate of the resonance cavity structure 100 is increased at the first wavelength, so that the color conversion efficiency of the wavelength conversion material P may be improved.
- the thickness T of the cavity 20 may vary in one direction intersecting the thickness direction of the cavity 20 , for example, along a planar direction of the resonant cavity structure 100 .
- the thickness of the cavity 20 may be gradually changed along the planar direction of the resonant cavity structure 100 .
- the thickness of the cavity 20 may be changed periodically along the planar direction of the resonant cavity structure 100 .
- the reflectance spectrum S2 of the resonant cavity structure 100 is the light intensity in the plane P2 of the lower portion of the resonant cavity structure 100 when excitation light is generated from the lower portion of the resonant cavity structure 100 toward the resonant cavity structure 100 . It is a graph that simulates the spectrum of
- the reflectance spectrum S2 of the resonant cavity structure 100 in which the cavity 20 is formed between the upper layer 10 and the lower layer 30 has the second A dip can occur at 1 wavelength.
- the excitation light EL of the first wavelength when the excitation light EL of the first wavelength is irradiated to the resonance cavity structure 100 , a part of the light of the first wavelength is trapped in the cavity 20 and resonates, and the other part is transmitted light TL into the resonance cavity structure 100 . ) can be escaped. Of course, the rest may be reflected. Accordingly, the absorption rate of the resonance cavity structure 100 is increased at the first wavelength, so that the color conversion efficiency of the wavelength conversion material P may be improved.
- FIG. 6 shows an environment for simulating transmittance, absorption, and reflectance of the resonant cavity structure 100 according to an embodiment of the present invention.
- 7 is a simulation result of transmittance (T), absorption (A), and reflectance (R) of the resonance cavity structure 100 in the same environment as in FIG. 6 .
- the simulation environment shown in FIG. 6 assumes that the excitation light EL is irradiated toward the resonance cavity structure 100 from the lower part of the resonance cavity structure 100 . It is assumed that the excitation light EL is a plane wave. In the simulation environment, it was assumed that the lower surface and the upper surface of the resonant cavity structure 100 were perfectly matched layers (PML). In the simulation environment, it was assumed that the side surface of the resonant cavity structure 100 is a periodic boundary condition (PBC).
- PML perfectly matched layers
- PBC periodic boundary condition
- the transmittance spectrum T of the resonance cavity structure 100 is obtained based on the light spectrum in the upper region A1 of the resonance cavity structure 100 under the simulation conditions as described above.
- the reflectance spectrum R of the resonance cavity structure 100 may be obtained based on the light spectrum in the lower region A3 of the resonance cavity structure 100 under the simulation conditions. Also, based on subtracting the transmittance spectrum T and the reflectance spectrum R from the excitation light EL spectrum, the absorption spectrum A in the cavity area A2 may be obtained.
- the graph G100 of FIG. 7 is a simulation result of the transmittance spectrum (T), the absorption spectrum (A), and the reflectance spectrum (R) of the resonant cavity structure 100 under the above conditions.
- the simulation may be, for example, a finite-difference time-domain (FDTD) simulation.
- the wavelength conversion material P included in the cavity 20 was a red Colloidal Quantum Dot (red CQD) (refractive index of 1.82).
- the material of the first dielectric layer 11 was assumed to be SiO 2 (refractive index 1.46), and the material of the second dielectric layer 12 was assumed to be SiN 4 (refractive index 2.04).
- the resonance cavity structure 100 is designed so that resonance occurs in the cavity 20 at a set first wavelength.
- the first wavelength may be set to, for example, 450 nm, but is not limited thereto.
- the first wavelength is set to the absorption wavelength of the wavelength conversion material P according to the characteristics of the wavelength conversion material P.
- the thickness of the first dielectric layer 11, the thickness of the second dielectric layer 12, and the thickness of the cavity 20 were set so as to resonate at the first wavelength and form a stop band around the first wavelength.
- the thickness T of the cavity 20 is n/(2n ⁇ c ) of the first wavelength (eg, 450 nm). ) times (n is a natural number, n- c is the refractive index of the cavity 20).
- the thickness T of (20) may be set to n/(4n- c ) times the first wavelength (eg, 450 nm) (n is an odd number, n- c is the refractive index of the cavity 20).
- a dip in the reflectance spectrum R may be formed at the set first wavelength. Accordingly, due to resonance at the first wavelength, a peak of the absorption spectrum A may be formed at the first wavelength. Also, referring to the transmittance spectrum T, it can be seen that a portion of the light is transmitted at the first wavelength.
- the excitation light EL of the first wavelength is irradiated to the resonance cavity structure 100 including the wavelength conversion material P, a portion of the light of the first wavelength leaves the resonance cavity structure 100 as it is.
- the other part may come out of the resonance cavity structure 100 after being color-converted to the second wavelength by the wavelength conversion material (P).
- the color-converted light of the second wavelength should be able to easily pass through the distributed Bragg reflector DBR corresponding to the upper layer 10 .
- a stopband ie, a band having a reflectance close to 1
- the resonant cavity structure 100 may be formed so as not to include the second wavelength.
- Equation 1 is an expression representing a stopband width.
- Equation 1 ⁇ max denotes the stopband width, ⁇ denotes the center wavelength of the stopband, n L denotes the refractive index of the first dielectric layer 11 at the wavelength ⁇ , and n H denotes the second dielectric at the wavelength ⁇
- the refractive index of the layer 12 is indicated.
- the center wavelength of the stop band is designed to match the first wavelength that is the absorption wavelength of the wavelength conversion material P, ⁇ becomes the first wavelength.
- the stopband width may increase. However, if the stopband width becomes too large, the stopband includes the second wavelength. When the stop band includes the second wavelength, propagation of the light of the second wavelength in the structure 100 is prohibited, so that the color conversion light cannot easily exit the structure 100 .
- the difference between the refractive index of the first dielectric layer 11 and the refractive index of the second dielectric layer 12 is that the stop band of the resonant cavity structure 100 does not include the second wavelength.
- the difference between the refractive index of the first dielectric layer 11 and the refractive index of the second dielectric layer 12 is set so that the stop band of the resonant cavity structure 100 is formed in a band having a shorter wavelength or a longer wavelength than the second wavelength.
- a difference between the refractive index of the first dielectric layer 11 and the refractive index of the second dielectric layer 12 may be set to be smaller than a specified value.
- the number of pairs of the first dielectric layer 11 and the second dielectric layer 12 in the upper layer 10 and the first dielectric layer 11 in the lower layer 30 and the number of pairs of the second dielectric layer 12 may be 4 or more and 6 or less, respectively.
- the stop band may be clearly defined.
- the reflectance at the boundary of the stop band may change sharply.
- the reflectance of the structure 100 at the first wavelength may increase, and the transmittance of the structure 100 at the first wavelength may decrease.
- the absorptivity of the structure 100 at the first wavelength may be the highest when the number of pairs in the upper layer 10 is 4 or more and 6 or less, and the number of pairs in the lower layer 30 is 4 or more and 6 or less.
- the number of pairs of the first dielectric layer 11 and the second dielectric layer 12 in the upper layer 10 and the first dielectric layer 11 and the second dielectric layer in the lower layer 30 are The number of pairs of dielectric layers 12 may be different.
- the number of pairs of the first dielectric layer 11 and the second dielectric layer 12 in the upper layer 10 or the lower layer 30 does not necessarily have to be an integer. For example, when there are five pairs of the first dielectric layer 11 and the second dielectric layer 12 in the upper layer 10 , the upper layer 10 includes five first dielectric layers 11 and five second dielectric layers 12 . ) can be alternately stacked.
- the lower layer 30 has five first dielectric layers 11 and four second dielectric layers 12 .
- the present invention is not limited thereto.
- the layer adjoining the cavity 20 in the upper layer 10 may be the first dielectric layer 11 or the second dielectric layer 12 .
- the layer in contact with the cavity 20 in the lower layer 30 ie, the uppermost layer of the lower layer 30
- the layer in contact with the cavity 20 in the lower layer 30 may be the first dielectric layer 11 or the second dielectric layer 12 .
- the refractive index of the first dielectric layer 11 is smaller than the refractive index of the cavity 20
- the refractive index of the second dielectric layer 12 is greater than the refractive index of the cavity 20 .
- the boundary between the cavity 20 and the second dielectric layer 12 becomes a fixed end so that a node is formed. can be formed.
- the boundary between the cavity 20 and the first dielectric layer 11 becomes a free end to form an antinode. can be formed.
- both the dielectric layer in contact with the cavity 20 in the upper layer 10 and the dielectric layer in contact with the cavity 20 in the lower layer 30 may be the second dielectric layer 12 .
- both the upper end and the lower end of the cavity 20 become fixed ends, and a strong field may be formed in the center of the cavity 20 .
- both the dielectric layer in contact with the cavity 20 in the upper layer 10 and the dielectric layer in contact with the cavity 20 in the lower layer 30 may be the first dielectric layer 11 .
- both the upper end and the lower end of the cavity 20 become free ends, and a strong field may be formed at the upper end and the lower end of the cavity 20 .
- the thickness of the cavity 20 (T) may be n/(2n c ) times the first wavelength (n is a natural number, n c is the refractive index of the cavity 20).
- the dielectric layer in contact with the cavity 20 in the upper layer 10 and the dielectric layer in contact with the cavity 20 in the lower layer 30 may be different types of dielectric layers.
- the thickness T of the cavity 20 is n/(4n c ) times (n is an odd number, n c is the refractive index of the cavity 20) of the first wavelength (eg, 450 nm). ) can be
- T transmittance
- A absorption
- R reflectance
- the refractive index of the second dielectric layer 12 is greater than that of the first dielectric layer 11 .
- the uppermost layer (layer 1 in FIG. 8 ) of the upper layer 10 , the lowermost layer (No. 2 in FIG. 8 ) of the upper layer 10 . layer), the uppermost layer of the lower layer 30 (layer 3 in FIG. 8 ), and the lowermost layer (layer 4 in FIG. 7 ) of the lower layer 30 may each be the first dielectric layer 11 and the second dielectric It may be layer 12 .
- Graphs G1 to G16 shown in FIG. 7 are graphs of transmittance (T), absorptivity (A), and light reflectance (R) for all such cases.
- L denotes a low refractive index, ie, the first dielectric layer 11
- H denotes a high refractive index, ie, the second dielectric layer 12 .
- G1 is denoted as LHHL, where the first layer is the first dielectric layer 11 , the second and third layers are the second dielectric layer 12 , and the fourth layer is the first dielectric layer (11) is a simulation graph of the resonance cavity structure.
- G2 denotes LHHH, and is a simulation graph of a resonant cavity structure in which the first layer is the first dielectric layer 11 and the second, third, and fourth layers are all the second dielectric layers 12 .
- G3 is denoted as HHHL, which is a simulation graph of a resonant cavity structure in which the first, second, and third layers are all the second dielectric layers 12 and the fourth layer is the first dielectric layer 11 .
- G1 to G4 in the first row are simulation graphs in the case where the second and third layers are both the second dielectric layer 12 .
- G5 to G8 in the second row are simulation graphs when the second layer is the second dielectric layer 12 and the third layer is the first dielectric layer 11 .
- G9 to G12 in the third row are simulation graphs when the second layer is the first dielectric layer 11 and the third layer is the second dielectric layer 12 .
- the fourth rows, G13 to G16, are simulation graphs in the case where the second and third layers are both the first dielectric layer 11 .
- the lowermost layer (No. 4 layer) of the lower layer 30 may be the first dielectric layer 11 .
- the fourth layer is the first dielectric layer 11 (G1, G3, G6, G8, G9, G11, G14, G16)
- the reflectance spectrum dip at the first wavelength You can see this deepening. Accordingly, in order to minimize the reflection of the excitation light and allow the excitation light to enter the inside of the structure 100 and resonate in the cavity 20 as much as possible, the lowermost layer (No.
- the first dielectric layer 11 may be preferable.
- the present invention is not limited thereto.
- the second dielectric layer 12 may be positioned at the lowermost portion of the lower layer 30 .
- the layer (No. 1 layer) located on top of the upper layer 10 is the second dielectric layer 12 .
- the refractive index of the layer (No. 1 layer) located on the uppermost portion of the upper layer 10 is high, transmission may be less and absorption may be increased.
- the first layer is the second dielectric layer 12 (G3, G4, G7, G8, G9, G10, G13, G14)
- the transmittance at the first wavelength is small. . Therefore, in order to minimize the transmission of the excitation light and to allow the excitation light to be confined in the structure 100 as much as possible and resonate in the cavity 20, the layer (No. 1) located on top of the upper layer 10 is the second dielectric layer 12
- the present invention is not limited thereto.
- FIG 9 shows a schematic structure of a resonant cavity structure 101 according to another embodiment of the present invention.
- the reflective layer 40 disposed on the side to which the excitation light is irradiated is further added.
- the resonance cavity structure 101 is located in the lower portion of the lower layer 30 compared to the above-described resonance cavity structure 100 .
- a reflective layer 40 may be further included.
- the resonance cavity structure 101 is formed between the upper layer 10, the lower layer 30, the upper layer 10 and the lower layer 30, and includes a wavelength conversion material (P). It may include a cavity 20 including the reflective layer 40 disposed under the lower layer 30 .
- the wavelength conversion material P may absorb light of a first wavelength and emit light of a second wavelength.
- the upper layer 10 and the lower layer 30 may each have a structure that reflects light of a first wavelength.
- the cavity 20 between the upper layer 10 and the lower layer 30 may be formed so that light of a first wavelength resonates.
- the reflective layer 40 disposed under the lower layer 30 may have a structure that reflects light of the second wavelength. Excitation light may be irradiated toward the resonance cavity structure 101 from the lower portion of the reflective layer 40 .
- each of the upper layer 10 and the lower layer 30 may be a distributed Bragg reflector (DBR) that reflects light of a first wavelength.
- the reflective layer 40 may be a distributed Bragg reflector (DBR) that reflects light of the second wavelength.
- the stop band of the reflective layer 40 may be formed not to include the first wavelength. That is, the stop band of the reflective layer 40 may be formed in a band having a longer wavelength or a shorter wavelength than the first wavelength. Accordingly, the light spectrum near the first wavelength of the resonant cavity structure 101 to which the reflective layer 40 is added may be similar to the light spectrum near the first wavelength of the resonant cavity structure 100 described above.
- the reflective layer 40 may be designed so that there is little decrease in transmittance, absorption, and reflectance at the first wavelength.
- the intensity of the color conversion light of the second wavelength that exits upward may be further improved.
- FIG. 10 shows a schematic structure of a resonant cavity structure 102 according to another embodiment of the present invention.
- the cavity 20' of the resonant cavity structure 102 may include a first wavelength conversion material P1 and a second wavelength conversion material P2.
- the cavity 20' includes a first layer in which a first wavelength converting material P1 is distributed, a second layer in which a second wavelength converting material P2 is distributed, and the first and second layers. and a third dielectric layer 21 disposed between the two layers.
- the first wavelength conversion material P1 may absorb light of a first wavelength that is a wavelength of the excitation light EL and emit light of a second wavelength.
- the second wavelength conversion material P2 may absorb light of a first wavelength and emit light of a third wavelength.
- the first wavelength conversion material P1 is a first phosphor that absorbs light of a first wavelength and emits light of a second wavelength longer than the first wavelength
- the second wavelength conversion material P2 may be a second phosphor that absorbs light of a first wavelength and emits light of a third wavelength longer than the first wavelength
- the upper layer 10 and the lower layer 30 of the resonant cavity structure 102 according to the embodiment shown in FIG. 10 may correspond to the above-described upper layer 10 and the lower layer 30 .
- the present invention further provides a light emitting structure including the resonance cavity structures 100, 101, and 102 according to various embodiments, and a light emitting layer disposed under the resonance cavity structures 100, 101, and 102 to emit excitation light. may be included (not shown).
- the light emitting layer may be, for example, a light emitting structure or a light emitting device (eg, LED, etc.).
- the light emitting structure according to an embodiment of the present invention is disposed below the resonance cavity structures 100 , 101 , and 102 and the resonance cavity structures 100 , 101 and 102 and generates excitation light of a first wavelength.
- it may include a light emitting device (eg, LED, etc.).
- a resonant cavity structure is provided.
- embodiments of the present invention may be applied to various fields requiring color conversion, such as lighting or display.
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Abstract
Description
Claims (26)
- 서로 다른 굴절률을 갖는 제1 유전체 층과 제2 유전체 층이 교번하여 적층된 상부층;상기 제1 유전체 층과 상기 제2 유전체 층이 교번하여 적층된 하부층; 및상기 상부층과 상기 하부층 사이에 형성된 공동(cavity);을 포함하며,상기 공동은, 제1 파장을 갖는 광을 흡수하여 상기 제1 파장과 다른 제2 파장을 갖는 광을 방출하는 파장 변환 물질을 포함하며,상기 제1 파장에서 상기 공동에 공진이 일어나도록 설계되며,상기 하부층의 하부에서 상기 제1 파장의 여기광이 입사하도록 마련된,공진 공동 구조체.
- 제1항에 있어서,상기 제2 파장은 상기 공진 공동 구조체의 저지 대역(stopband)의 바깥에 위치하는,공진 공동 구조체.
- 제1항에 있어서,상기 제2 파장은 상기 제1 파장보다 긴, 공진 공동 구조체.
- 제3항에 있어서,상기 공진 공동 구조체의 저지 대역은 상기 제2 파장보다 단파장인 대역에 형성되는, 공진 공동 구조체.
- 제1항에 있어서,상기 제1 유전체 층의 굴절률은 상기 파장 변환 물질을 포함하는 상기 공동의 굴절률 보다 작고,상기 제2 유전체 층의 굴절률은 상기 파장 변환 물질을 포함하는 상기 공동의 굴절률보다 큰,공진 공동 구조체.
- 제5항에 있어서,상기 하부층의 최하부에 위치한 층은 상기 제1 유전체 층인,공진 공동 구조체.
- 제5항에 있어서,상기 상부층의 최상부에 위치한 층은 상기 제2 유전체 층인,공진 공동 구조체.
- 제1항에 있어서,상기 상부층에서 상기 공동에 접하는 유전체 층과 상기 하부층에서 상기 공동에 접하는 유전체 층은 서로 같은 유전체 층이고,상기 공동의 두께는 상기 제1 파장의 길이의 n/(2nc) 배인(n은 자연수이고 nc는 상기 공동의 굴절률),공진 공동 구조체.
- 제1항에 있어서,상기 상부층에서 상기 공동에 접하는 유전체 층과 상기 하부층에서 상기 공동에 접하는 유전체 층은 서로 다른 유전체 층이고,상기 공동의 두께는 상기 제1 파장의 길이의 n/(4nc) 배인(n은 홀수이고 nc는 상기 공동의 굴절률),공진 공동 구조체.
- 제1항에 있어서,상기 하부층의 하부에 배치되며, 상기 제1 파장의 광을 통과시키고 상기 제2 파장의 광을 반사시키는 반사층;을 더 포함하는,공진 공동 구조체.
- 제1항에 있어서,상기 공동은,상기 제1 파장의 광을 흡수하여 상기 제2 파장의 광을 방출하는 제1 파장 변환 물질; 및상기 제1 파장의 광을 흡수하여 제3 파장의 광을 방출하는 제2 파장 변환 물질;을 더 포함하는,공진 공동 구조체.
- 제11항에 있어서,상기 공동은 상기 제1 파장 변환 물질이 분포된 제1 층, 상기 제2 파장 변환 물질이 분포된 제2 층, 및 상기 제1 층과 상기 제2 층 사이에 배치되는 제3 유전체 층을 포함하는,공진 공동 구조체.
- 제1항에 있어서,상기 공동의 두께는 상기 공동의 두께 방향에 교차하는 일방향을 따라 점진적으로 변하는,공진 공동 구조체.
- 제1항에 있어서,상기 공동의 두께는 상기 두께 방향에 교차하는 일방향을 따라 주기적으로 변하는,공진 공동 구조체.
- 제1항에 있어서,상기 제1 유전체 층의 두께 또는 상기 제2 유전체 층의 두께는 상기 상부층 또는 상기 하부층에 대하여 교번 횟수가 증가함에 따라 점진적으로 변하는,공진 공동 구조체.
- 제1항에 있어서,상기 제1 유전체 층의 굴절률 또는 상기 제2 유전체 층의 굴절률은 상기 상부층 또는 상기 하부층에 대하여 교번 횟수가 증가함에 따라 점진적으로 변하는,공진 공동 구조체.
- 제1항에 있어서,상기 공진 공동 구조체의 상면 또는 하면은 오목부 또는 볼록부를 포함하는,공진 공동 구조체.
- 제17항에 있어서,상기 공진 공동 구조체의 상면 또는 하면은 복수의 오목부 또는 복수의 볼록부를 포함하고,상기 복수의 오목부 또는 상기 복수의 볼록부는 규칙적으로 배열되는,공진 공동 구조체.
- 서로 다른 굴절률을 갖는 제1 유전체 층과 제2 유전체 층이 교번하여 적층된 상부층, 상기 제1 유전체 층과 상기 제2 유전체 층이 교번하여 적층된 하부층, 및 상기 상부층과 상기 하부층 사이에 형성된 공동(cavity)을 포함하는 공진 공동 구조체; 및상기 하부층의 하부에 배치되며 제1 파장의 여기광을 생성하는 발광 구조 또는 발광 소자;을 포함하고,상기 공동은, 상기 제1 파장을 갖는 광을 흡수하여 상기 제1 파장과 다른 제2 파장을 갖는 광을 방출하는 파장 변환 물질을 포함하며,상기 공진 공동 구조체는, 상기 제1 파장에서 상기 공동에 공진이 일어나도록 설계된,발광 구조체.
- 제19항에 있어서,상기 제2 파장은 상기 공진 공동 구조체의 저지 대역(stopband)의 바깥에 위치하는,발광 구조체.
- 제19항에 있어서,상기 제2 파장은 상기 제1 파장보다 긴, 발광 구조체.
- 제21항에 있어서,상기 공진 공동 구조체의 저지 대역은 상기 제2 파장보다 단파장인 대역에 형성되는, 발광 구조체.
- 제19항에 있어서,상기 제1 유전체 층의 굴절률은 상기 공동의 굴절률 보다 작고, 상기 제2 유전체 층의 굴절률은 상기 공동의 굴절률보다 크고,상기 하부층의 최하부에 위치한 층은 상기 제1 유전체 층인,발광 구조체.
- 제19항에 있어서,상기 제1 유전체 층의 굴절률은 상기 공동의 굴절률 보다 작고, 상기 제2 유전체 층의 굴절률은 상기 공동의 굴절률보다 크고,상기 상부층의 최상부에 위치한 층은 상기 제2 유전체 층인,발광 구조체.
- 제19항에 있어서,상기 공동은,상기 제1 파장의 광을 흡수하여 상기 제2 파장의 광을 방출하는 제1 파장 변환 물질; 및상기 제1 파장의 광을 흡수하여 제3 파장의 광을 방출하는 제2 파장 변환 물질;을 더 포함하는,발광 구조체.
- 제25항에 있어서,상기 공동은 상기 제1 파장 변환 물질이 분포된 제1 층, 상기 제2 파장 변환 물질이 분포된 제2 층, 및 상기 제1 층과 상기 제2 층 사이에 배치되는 제3 유전체 층을 포함하는,발광 구조체.
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KR20160126059A (ko) * | 2014-02-27 | 2016-11-01 | 코닌클리케 필립스 엔.브이. | 파장 변환 발광 디바이스를 형성하는 방법 |
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KR20220064823A (ko) | 2022-05-19 |
JP2023551120A (ja) | 2023-12-07 |
CN116508169A (zh) | 2023-07-28 |
KR102662357B1 (ko) | 2024-04-30 |
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