WO2022100670A1 - 一种钙钛矿超快x射线探测器及其制备方法 - Google Patents

一种钙钛矿超快x射线探测器及其制备方法 Download PDF

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WO2022100670A1
WO2022100670A1 PCT/CN2021/130132 CN2021130132W WO2022100670A1 WO 2022100670 A1 WO2022100670 A1 WO 2022100670A1 CN 2021130132 W CN2021130132 W CN 2021130132W WO 2022100670 A1 WO2022100670 A1 WO 2022100670A1
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perovskite
ray detector
ultrafast
transport layer
layer
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唐江
牛广达
巫皓迪
杜鑫源
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Huazhong University of Science and Technology
Ezhou Industrial Technology Research Institute of Huazhong University of Science and Technology
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Huazhong University of Science and Technology
Ezhou Industrial Technology Research Institute of Huazhong University of Science and Technology
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • the present disclosure relates to the field of X-ray detectors, and in particular, to a perovskite ultrafast X-ray detector and a preparation method thereof.
  • the current X-ray imaging technology mainly includes indirect detection imaging technology and direct detection imaging technology.
  • the indirect detection imaging technology uses the scintillator to emit visible light after being irradiated by X-rays, and then uses the photodetector to detect the visible light for imaging.
  • the advantages of scintillators are fast response and low cost.
  • the spatial resolution is low due to crosstalk caused by optical refraction and scattering.
  • the crystals need to be isolated by shielding materials. This makes the pixel of the scintillator unable to be reduced, and the utilization rate is low.
  • Direct detection imaging technology uses semiconductor materials to absorb high-energy rays to generate electron-hole pairs, which are collected by external circuits under the action of an external electric field to realize signal detection.
  • CT X-ray tomography
  • semiconductors Due to the limitation of the transmission speed of carriers, semiconductors have a slow response speed to rays and cannot meet the requirements of X-ray tomography (CT).
  • the present disclosure provides a perovskite ultrafast X-ray detector. X-rays are incident on the perovskite material layer in the detector obliquely, so that the thickness of the perovskite material layer can be reduced when designing the perovskite material layer, thereby reducing the thickness of the perovskite material layer. Improve the response speed to meet the CT application requirements that require high response speed.
  • the present disclosure also provides a method for preparing a perovskite ultrafast X-ray detector, and provides a method for preparing a perovskite ultrafast X-ray detector, which ensures the use stability of the detector and the formation of interlayers. effective contact.
  • a perovskite ultrafast X-ray detector provided by the present disclosure includes, in order from top to bottom: a metal electrode, an electron transport layer, a perovskite material layer, a hole transport layer and a substrate layer ; wherein, X-rays are incident from one side of the detector, and electron-hole pairs are generated in the perovskite material layer, and the electron-hole pairs are separated under the action of the working voltage, thereby generating an electrical signal, The electrical signal is output through the metal electrode, wherein the operating voltage is applied to the substrate layer.
  • the material of the metal electrode is one or more of gold, silver, copper and chromium.
  • the material of the electron transport layer is zinc oxide, fullerene derivatives, tin dioxide, magnesium zinc oxide, titanium dioxide, poly[bis(4-phenyl)(2,4, 6-trimethylphenyl)amine] in one.
  • the perovskite material layer is made of a perovskite material, and the chemical expression of the perovskite material is ABX3, wherein A is one of methylamine, formamidine, and cesium. One or more, B is lead, and X is one or more of halide ions chlorine, bromine and iodine.
  • the material of the hole transport layer is nickel oxide, copper iodide and 2,2',7,7'-tetrabromo-9,9'-spirobis,tris(4- One of iodoani)amines.
  • the substrate layer is one of indium tin oxide or fluorine-doped tin dioxide transparent conductive glass.
  • the thickness of the perovskite material layer is 0.1 to 1 mm.
  • the metal electrode includes a plurality of pixel electrode strips arranged at intervals, and the pixel electrode strips have a length greater than 5 mm and a width of 300 nm to 1 mm.
  • the present disclosure provides a method for preparing a perovskite ultrafast X-ray detector, comprising:
  • Step 1 preparing the hole transport layer on the substrate layer by means of evaporation, sputtering, spin coating or spray coating;
  • Step 2 preparing a perovskite material layer on the hole transport layer by means of blade coating, evaporation or spin coating;
  • Step 3 preparing an electron transport layer on the perovskite material layer by means of evaporation, sputtering, spin coating or spray coating;
  • Step 4 Prepare a metal electrode on the electron transport layer by evaporation.
  • FIG. 1 is a perspective view of a perovskite ultrafast X-ray detector according to an embodiment of the present disclosure.
  • FIG. 2 is a side view of a perovskite ultrafast X-ray detector according to an embodiment of the present disclosure.
  • FIG 3 is a top view of a perovskite ultrafast X-ray detector according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic detection diagram of a detector according to an embodiment of the present disclosure.
  • FIG. 5 is a flowchart of a method for fabricating a perovskite ultrafast X-ray detector according to an embodiment of the present disclosure.
  • FIG. 6 shows the responses of the perovskite ultrafast X-ray detector under different dose rate X-rays according to an embodiment of the present disclosure.
  • FIG. 7 is an X-ray response speed of a perovskite ultrafast X-ray detector according to an embodiment of the present disclosure.
  • the terms “middle”, “upper”, “lower”, “horizontal”, “inner”, etc. indicate directions or terms of positional relationship based on the directions shown in the drawings or The positional relationship, which is only for convenience of description, does not indicate or imply that the device or element must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as a limitation of the present disclosure.
  • the terms “first” and “second” are used for descriptive purposes only and should not be construed to indicate or imply relative importance.
  • connection can also be a detachable connection, or an integral connection; it can be a mechanical connection; it can be a direct connection, or an indirect connection through an intermediate medium, and it can be the internal communication of two components.
  • connection can also be a detachable connection, or an integral connection; it can be a mechanical connection; it can be a direct connection, or an indirect connection through an intermediate medium, and it can be the internal communication of two components.
  • the present disclosure provides a perovskite ultrafast X-ray detector, which sequentially includes from top to bottom: a metal electrode 110 , an electron transport layer 120 , The perovskite material layer 130 , the hole transport layer 140 and the substrate layer 150 .
  • X-rays are incident from one side of the detector, and electron-hole pairs are generated in the perovskite material layer 130.
  • the electron-hole pairs are separated under the action of the working voltage applied to the substrate layer 150, and are formed by This generates an electrical signal, and outputs the electrical signal through the metal electrode 110 , and the output electrical signal is transmitted to the reading circuit (not shown in the figure) through the signal line 200 . Since the X-rays are incident on the perovskite material layer 130 from one side of the detector, the thickness of the perovskite material layer 130 can be reduced when designing the perovskite material layer 130, thereby improving the response speed and satisfying CT applications that require high response speed. Require.
  • the titanium material layer 130 absorbs X-rays and converts them into carriers, the carriers are directionally drifted under the action of an electric field and then collected by the metal electrode 110 to generate electrical signals, so there is no pixel crosstalk.
  • the material of the metal electrode 110 may be one or more of gold, silver, copper and chromium.
  • the material of the electron transport layer 120 may be one of ZnO, PCBM, SnO2, ZnMgO, TiO2, and PTAA.
  • ZnO is zinc oxide.
  • PCBM is a fullerene derivative with the molecular formula [6,6]-phenyl-C61-butyric acid methyl ester. Because of its good solubility and high electron mobility, it can be used with common polymers to give Bulk materials form good phase separation and thus have become the standard for electron acceptors for organic solar cells.
  • SnO2 is tin dioxide
  • ZnMgO is magnesium zinc oxide
  • TiO2 is titanium dioxide
  • PTAA is poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]
  • PTAA is perovskite material.
  • the arrangement of the electron transport layer 120 can play the role of transporting electrons and blocking holes in the structure of the detector, which can improve the transmission rate of electronic signals and reduce defects on the surface of the perovskite material.
  • the perovskite material layer 130 may be made of a perovskite material whose chemical expression is ABX3.
  • A can be one or more of methylamine, formamidine, cesium; B can be lead; X can be one or more of halogen ions chlorine, bromine, and iodine.
  • the thickness of the perovskite material layer may be 0.1-1 mm.
  • perovskite materials are used as direct detection materials, and the conversion efficiency is higher.
  • the material of the hole transport layer 140 may be nickel oxide, copper iodide, and 2,2',7,7'-tetrabromo-9,9'-spirobis,tris(4-iodobenzene) one of the amines.
  • the arrangement of the hole transport layer 140 can increase the energy band gap and improve the electrical stability and thermal stability while improving the hole collection efficiency.
  • the substrate layer 150 may be one of indium tin oxide or fluorine-doped tin dioxide transparent conductive glass.
  • the metal electrode 110 may include a plurality of pixel electrode strips 111 a arranged at intervals, wherein the pixel electrode strips 111 a may have a length greater than 5 mm and a width of 300 nm to 1 mm.
  • the metal electrode 110 directly provides the electrical signal obtained by direct detection to the reading circuit, thereby avoiding multi-step conversion from X-ray to visible light to electrical signal in indirect detection, thereby reducing circuit complexity and avoiding the introduction of external noise.
  • the present disclosure also provides a method for preparing a perovskite ultrafast X-ray detector, including:
  • Step S210 preparing the hole transport layer 140 on the substrate layer 150 by means of evaporation, sputtering, spin coating or spray coating;
  • Step S220 preparing the perovskite material layer 130 on the hole transport layer 140 by scraping, evaporation or spin coating;
  • Step S230 preparing the electron transport layer 120 on the perovskite material layer 130 by means of evaporation, sputtering, spin coating or spray coating;
  • Step S240 preparing the metal electrode 110 on the electron transport layer 120 by evaporation.
  • the present disclosure provides a method for preparing a perovskite ultrafast X-ray detector, and provides a method for preparing the above-mentioned perovskite ultrafast X-ray detector, which ensures the use stability of the detector and forms effective contact between layers.
  • the responses produced by the fabricated detector devices under different dose rate X-rays are shown.
  • the hole transport layer is made of TiO2
  • the electron transport layer is made of PCBM
  • the electrode is made of FTO and gold
  • the perovskite material layer is made of methylamine lead iodine material
  • the device is prepared. Using Keithley6517B high resistance meter to test, the device works under 0.5V bias voltage, it can be found that the response of the device to X-ray is linear.
  • the X-ray response speed of the fabricated detector device is shown.
  • the hole transport layer is made of TiO2
  • the electron transport layer is made of PCBM
  • the electrode is made of FTO and gold
  • the perovskite material layer is made of methylamine lead iodine material
  • the device is prepared.
  • the bias voltage of the device is 0.1V
  • the X-ray switch is controlled by the chopper, and the response rate of the device is collected by the oscilloscope. It can be seen from the figure that the rising edge of the device reaches 80 ⁇ s and the falling edge reaches 70 ⁇ s.
  • the response rate of the detector can be obtained by the following equation:
  • t is the response rate
  • d is the thickness of the detector
  • ⁇ is the carrier mobility
  • V is the operating voltage
  • the response speed of the X-ray detector provided in this embodiment is fast and can meet the requirements of X-ray tomography (CT).
  • the perovskite ultrafast X-ray detector provided by the present disclosure enables X-rays to laterally incident on the perovskite material layer, thereby reducing the thickness of the perovskite material layer when designing the perovskite material layer, thereby improving the response speed, Meet the CT application requirements that require high response speed.
  • the present disclosure also provides a method for preparing a perovskite ultrafast X-ray detector, and provides a method for preparing a perovskite ultrafast X-ray detector, which ensures the use stability of the detector and forms effective contact between layers .

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  • Physics & Mathematics (AREA)
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Abstract

本公开提供了一种钙钛矿超快X射线探测器，其自上至下依次包括：金属电极、电子传输层、钙钛矿材料层、空穴传输层和衬底层；其中，X射线从所述探测器的一侧入射，并在所述钙钛矿材料层中产生电子空穴对，所述电子空穴对在施加在衬底层的工作电压的作用下分离，由此产生电信号，并通过所述金属电极输出所述电信号。本公开还提供了一种钙钛矿超快X射线探测器制备方法，给出了用于制备钙钛矿超快X射线探测器的方法，保证探测器的使用稳定性，层间形成有效接触。

Description

一种钙钛矿超快X射线探测器及其制备方法
相关申请的交叉引用
本申请要求于2020年11月16日提交、申请号为202011283052.6且名称为“一种钙钛矿超快X射线探测器及其制备方法”的中国专利申请的优先权，其全部内容通过引用合并于此。
技术领域
本公开内容涉及X射线探测器领域，尤其涉及一种钙钛矿超快X射线探测器及其制备方法。
背景技术
当前X射线成像技术主要包括间接探测成像技术和直接探测成像技术。间接探测成像技术是利用闪烁体受X射线辐照后发射可见光，再利用光电探测器检测可见光来成像。闪烁体的优点是响应速度快、造价低廉。但是由于受到光学折射和散射引起的串扰影响，空间分辨率较低。为了降低串扰影响，晶体间需要使用屏蔽材料隔离。这使得闪烁体的像素无法减小，且利用率较低。直接探测成像技术则是利用半导体材料吸收高能射线后，产生电子-空穴对，在外加电场的作用下，被外电路收集来实现信号探测。
目前，X射线断层扫描(CT)主要利用闪烁体制作X射线探测器，其空间分辨率为毫米级别。而半导体由于受限于载流子的传输速度，因此对射线的响应速度较慢，尚无法满足X射线断层扫描(CT)要求。
发明内容
本公开提供了一种钙钛矿超快X射线探测器，X射线斜向入射到探测器中的钙钛矿材料层，由此可以在设计钙钛矿材料层时，减小其厚度，从而提高响应速度，满足对响应速度要求较高的CT应用要求。
此外，本公开还提供了一种钙钛矿超快X射线探测器制备方法，给出 了用于制备钙钛矿超快X射线探测器的方法，保证探测器的使用稳定性，层间形成有效接触。
根据本公开的一个方面，本公开提供的一种钙钛矿超快X射线探测器，自上至下依次包括：金属电极、电子传输层、钙钛矿材料层、空穴传输层和衬底层；其中，X射线从所述探测器的一侧入射，并在所述钙钛矿材料层中产生电子空穴对，所述电子空穴对在工作电压作用下分离，由此产生电信号，所述电信号通过所述金属电极输出，其中，所述工作电压施加在所述衬底层。
在本公开的一些实施例中，所述金属电极的材质为金、银、铜和铬中的一种或几种。
在本公开的一些实施例中，所述电子传输层的材质为氧化锌、富勒烯衍生物、二氧化锡、氧化镁锌、二氧化钛、聚[双(4-苯基)(2,4,6-三甲基苯基)胺]中的一种。
在本公开的一些实施例中，所述钙钛矿材料层由钙钛矿材料制成，所述钙钛矿材料的化学表达式为ABX3，其中，A为甲胺、甲脒、铯中的一种或几种，B为铅，X为卤素离子氯、溴、碘中的一种或几种。
在本公开的一些实施例中，所述空穴传输层的材料为氧化镍、碘化铜和2,2',7,7'-四溴-9,9'-螺二、三(4-碘苯)胺中的一种。
在本公开的一些实施例中，所述衬底层为氧化铟锡或掺杂氟的二氧化锡透明导电玻璃的一种。
在本公开的一些实施例中，所述钙钛矿材料层的厚度为0.1至1mm。
在本公开的一些实施例中，所述金属电极包括多个间隔设置的像素电极条，所述像素电极条的长度大于5mm且宽度为300nm至1mm。
根据本公开的另一方面，本公开提供的一种钙钛矿超快X射线探测器制备方法，包括：
步骤一、在衬底层上通过蒸镀、溅射、旋涂或喷涂的方式，制备空穴传输层；
步骤二、在所述空穴传输层上通过刮涂、蒸镀或旋涂的方式制备钙钛矿材料层；
步骤三、在所述钙钛矿材料层上通过蒸镀、溅射、旋涂或喷涂的方式， 制备电子传输层；以及
步骤四、在所述电子传输层上通过蒸镀方式制备金属电极。
附图说明
图1为依据本公开实施例的钙钛矿超快X射线探测器的立体图。
图2为依据本公开实施例的钙钛矿超快X射线探测器的侧视图。
图3为依据本公开实施例的钙钛矿超快X射线探测器的俯视图。
图4为依据本公开实施例的探测器的探测示意图。
图5为依据本公开实施例的钙钛矿超快X射线探测器制备方法的流程图。
图6为依据本公开实施例的钙钛矿超快X射线探测器在不同剂量率X射线下产生的响应。
图7为依据本公开实施例的钙钛矿超快X射线探测器的X射线响应速度。
具体实施方式
以下由特定的具体实施例说明本公开的实施方式，熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本公开的其他优点及功效，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
需要说明的是，在本公开的描述中，术语“中”、“上”、“下”、“横”、“内”等指示的方向或位置关系的术语是基于附图所示的方向或位置关系，这仅仅是为了便于描述，而不是指示或暗示所述装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。
此外，还需要说明的是，在本公开的描述中，除非另有明确的规定和限定，术语“设置”、“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接；可以是直 接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域技术人员而言，可根据具体情况理解上述术语在本公开中的具体含义。
如图1至图3所示，基于背景技术提出的技术问题，本公开提供了一种钙钛矿超快X射线探测器，其自上至下依次包括：金属电极110、电子传输层120、钙钛矿材料层130、空穴传输层140和衬底层150。
如图4所示，X射线从探测器的一侧入射，并在钙钛矿材料层130中产生电子空穴对，电子空穴对在施加在衬底层150的工作电压的作用下分离，由此产生电信号，并通过金属电极110输出电信号，输出电信号经信号线200传输到读取电路(图中未示出)。由于X射线从探测器的一侧入射到钙钛矿材料层130，因此可以在设计钙钛矿材料层130时，减小其厚度，从而提高响应速度，满足对响应速度要求较高的CT应用要求。
由于钛矿材料层130吸收X射线并将其转换为载流子，载流子在电场作用下定向漂移然后被金属电极110收集，产生电信号，因此不存在像素串扰。
在一些实施例中，金属电极110的材质可以为金、银、铜和铬中的一种或几种。
在一些实施例中，电子传输层120的材质可以为ZnO、PCBM、SnO2、ZnMgO、TiO2、PTAA中的一种。其中，ZnO为氧化锌。PCBM是一个富勒烯衍生物，分子式是[6,6]-phenyl-C61-butyric acid methyl ester，由于它具有较好的溶解性，以及很高的电子迁移率，能够与常见的聚合物给体材料形成良好的相分离，因此已成为有机太阳能电池的电子受体的标准物。SnO2为二氧化锡，ZnMgO为氧化镁锌，TiO2为二氧化钛，PTAA为聚[双(4-苯基)(2,4,6-三甲基苯基)胺]，PTAA为钙钛矿材料。在本实施例中，设置电子传输层120，能够在探测器的结构中起到传输电子和阻挡空穴的作用，能够改善电子信号的传输速率，减少钙钛矿材料表面的缺陷。
在一些实施例中，钙钛矿材料层130可以由钙钛矿材料制成，所述钙钛矿材料的化学表达式为ABX3。其中，A可以为甲胺、甲脒、铯中的一种或几种；B可以为铅；X可以为卤素离子氯、溴、碘中的一种或几种。所述钙钛矿材料层的厚度可以为0.1～1mm。对于X射线，采用钙钛矿材料作为 直接探测材料，转换效率更高。这是因为钙钛矿材料中的电子-空穴对的生成能一般为5～6eV，而常用的间接探测材料GOS的量子产额为60000/MeV，对应电子-空穴对生成能为16.7eV，远高于其他探测材料。
在一些实施例中，空穴传输层140的材料可以为氧化镍、碘化铜和2,2',7,7'-四溴-9,9'-螺二、三(4-碘苯)胺中的一种。设置空穴传输层140，能够在提高空穴收集效率的同时增大能带间隙、提高电气稳定性和热稳定性。
在一些实施例中，衬底层150可以为氧化铟锡或掺杂氟的二氧化锡透明导电玻璃的一种。
如图2和图3所示，在一些实施例中，金属电极110可以包括多个间隔设置的像素电极条111a，其中，像素电极条111a的长度可以大于5mm且宽度为300nm至1mm。金属电极110将直接探测得到的电信号直接提供给读取电路，由此能够避免间接探测中由X光到可见光到电信号的多步转换，从而降低电路复杂性，避免引入外部噪声。
如图5所示，本公开还提供了一种钙钛矿超快X射线探测器制备方法，包括：
步骤S210、在衬底层150上通过蒸镀、溅射、旋涂或喷涂的方式，制备空穴传输层140；
步骤S220、在空穴传输层140上通过刮涂、蒸镀或旋涂的方式制备钙钛矿材料层130；
步骤S230、在钙钛矿材料层130上通过蒸镀、溅射、旋涂或喷涂的方式，制备电子传输层120；
步骤S240、在电子传输层120上通过蒸镀方式制备金属电极110。
本公开提供的钙钛矿超快X射线探测器制备方法，给出了用于制备上述钙钛矿超快X射线探测器的方法，保证探测器的使用稳定性，层间形成有效接触。
如图6所示，显示了制备的探测器器件在不同剂量率X射线下产生的响应。利用TiO2制作空穴传输层，利用PCBM制作电子传输层，利用FTO与金制作电极，利用甲胺铅碘材料制作钙钛矿材料层，制备器件。采用Keithley6517B高阻计进行测试，器件工作在0.5V偏压下，可以发现器件对X射线 响应呈线性关系。
如图7所示，显示了制备的探测器器件的X射线响应速度。利用TiO2制作空穴传输层，利用PCBM制作电子传输层，利用FTO与金制作电极，利用甲胺铅碘材料制作钙钛矿材料层，制备器件。当器件偏压为0.1V时，通过斩波器控制X射线开关，利用示波器采集器件的响应速率，由图可知器件上升沿达到80μs，下降沿达到70μs。
探测器的响应速率可以通过下式获得：
Figure PCTCN2021130132-appb-000001
其中，t为响应速率，d为探测器的厚度，μ为载流子迁移率，V为工作电压。
由此可见，本实施例提供的X射线探测器的响应速度快，能够满足X射线断层扫描(CT)要求。
本公开提供的钙钛矿超快X射线探测器，使得X射线能够侧向入射到钙钛矿材料层，由此可以在设计钙钛矿材料层时，减小其厚度，从而提高响应速度，满足对响应速度要求较高的CT应用要求。
本公开还提供了一种钙钛矿超快X射线探测器制备方法，给出了用于制备钙钛矿超快X射线探测器的方法，保证探测器的使用稳定性，层间形成有效接触。
至此，已经结合附图所示的优选实施方式描述了本公开的技术方案，但是，本领域技术人员容易理解的是，本公开的保护范围显然不局限于这些具体实施方式。在不偏离本公开的原理的前提下，本领域技术人员可以对相关技术特征做出等同的更改或替换，这些更改或替换之后的技术方案都将落入本公开的保护范围之内。

Claims (9)

  1. 一种钙钛矿超快X射线探测器，其自上至下依次包括：金属电极、电子传输层、钙钛矿材料层、空穴传输层和衬底层；
    其中，X射线从所述探测器的一侧入射，并在所述钙钛矿材料层中产生电子空穴对，所述电子空穴对在工作电压作用下分离，由此产生电信号，所述电信号通过所述金属电极输出，其中，所述工作电压施加在所述衬底层。
  2. 如权利要求1所述的钙钛矿超快X射线探测器，其中，所述金属电极的材质为金、银、铜和铬中的一种或几种。
  3. 如权利要求1所述的钙钛矿超快X射线探测器，其中，所述电子传输层的材质为氧化锌、富勒烯衍生物、二氧化锡、氧化镁锌、二氧化钛、聚[双(4-苯基)(2,4,6-三甲基苯基)胺]中的一种。
  4. 如权利要求2或3所述的钙钛矿超快X射线探测器，其中，所述钙钛矿材料层由钙钛矿材料制成，所述钙钛矿材料的化学表达式为ABX3，其中，A为甲胺、甲脒、铯中的一种或几种，B为铅，X为卤素离子氯、溴、碘中的一种或几种。
  5. 如权利要求4所述的钙钛矿超快X射线探测器，其中，所述空穴传输层的材料为氧化镍、碘化铜和2,2',7,7'-四溴-9,9'-螺二、三(4-碘苯)胺中的一种。
  6. 如权利要求5所述的钙钛矿超快X射线探测器，其中，所述衬底层为氧化铟锡或掺杂氟的二氧化锡透明导电玻璃的一种。
  7. 如权利要求1或3所述的钙钛矿超快X射线探测器，其中，所述钙钛矿材料层的厚度为0.1至1mm。
  8. 如权利要求7所述的钙钛矿超快X射线探测器，其中，所述金属电极包括多个间隔设置的像素电极条，所述像素电极条的长度大于5mm且宽度为300nm至1mm。
  9. 一种钙钛矿超快X射线探测器制备方法，包括：
    步骤一、在衬底层上通过蒸镀、溅射、旋涂或喷涂的方式，制备空穴传 输层；
    步骤二、在所述空穴传输层上通过刮涂、蒸镀或旋涂的方式制备钙钛矿材料层；
    步骤三、在所述钙钛矿材料层上通过蒸镀、溅射、旋涂或喷涂的方式，制备电子传输层；以及
    步骤四、在所述电子传输层上通过蒸镀方式制备金属电极。
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