WO2022092502A1

WO2022092502A1 - Exhaust gas treatment equipment for semiconductor manufacturing facility

Info

Publication number: WO2022092502A1
Application number: PCT/KR2021/010374
Authority: WO
Inventors: 배진호; 유태욱; 이종택; 나정균
Original assignee: (주)엘오티씨이에스; (주)엘오티베큠
Priority date: 2020-11-02
Filing date: 2021-08-06
Publication date: 2022-05-05
Also published as: KR102265878B1; TWI798907B; TW202224066A

Abstract

Provided is exhaust gas treatment equipment for a semiconductor manufacturing facility, comprising: a reaction chamber for treating exhaust gas by using an inductively coupled plasma reaction; and a reactive gas ejection means for ejecting reactive gas, wherein: the reaction chamber provides a plasma reaction space in which the inductively coupled plasma reaction occurs, and includes a chamber body in which a gas inlet and a gas outlet that communicate with the plasma reaction space, are formed, the gas inlet allowing the exhaust gas to be introduced into the plasma reaction space, and the gas outlet allowing the exhaust gas to be discharged from the plasma reaction space; and the reactive gas ejection means ejects the reactive gas toward the plasma reaction space through the gas inlet from the outside of the upstream side of the plasma reaction space.

Description

Exhaust gas treatment equipment for semiconductor manufacturing facilities

The present invention relates to semiconductor manufacturing equipment technology, and more particularly, to equipment for treating exhaust gas discharged from a process chamber using plasma.

A semiconductor device is manufactured by repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on a wafer in a process chamber. During the semiconductor manufacturing process, various process gases are used, and after the process is completed, residual gas is present in the process chamber. Since the residual gas in the process chamber contains toxic components, it is discharged by a vacuum pump and It is purified by an exhaust gas treatment device. Since the exhaust gases are compressed at a high temperature of 100° C. or higher inside the vacuum pump, a phase change of the exhaust gases easily occurs, so that solid by-products are easily formed and accumulated inside the vacuum pump, which causes malfunction of the vacuum pump.

In order to prevent the failure of the vacuum pump due to exhaust gas, recently, a technology for installing a plasma reactor that decomposes gas using inductively coupled plasma (ICP) in the pipe connecting the process chamber and the vacuum pump has been developed. It has been and is being used (configuration described in Patent Registration No. 10-1448449). A reactive gas such as oxygen gas is injected into the upstream pipe of the plasma reactor to improve the decomposition performance of the exhaust gas in the plasma reactor, but there is a problem in that solids are generated and grown on the wall opposite to the port where the oxygen gas is injected.

SUMMARY OF THE INVENTION An object of the present invention is to solve a problem in which a solid material is generated and grown on a pipe wall by oxygen gas injection in an upstream pipe of a plasma reactor that decomposes gas using inductively coupled plasma.

In order to achieve the above object of the present invention, according to one aspect of the present invention, a reaction chamber for treating exhaust gas using an inductively coupled plasma reaction; and reactive gas ejection means for ejecting reactive gas, wherein the reaction chamber provides a plasma reaction space in which the inductively coupled plasma reaction occurs, and a gas inlet and a gas outlet communicating with the plasma reaction space are formed. a body, wherein the exhaust gas is introduced into the plasma reaction space through the gas inlet, and the exhaust gas is discharged from the plasma reaction space through the gas outlet, and the reactive gas spraying means is a part of the plasma reaction space. There is provided an exhaust gas treatment equipment for a semiconductor manufacturing facility that injects the reactive gas toward the plasma reaction space through the gas inlet from the outside on an upstream side.

In order to achieve the above object of the present invention, according to another aspect of the present invention, a reaction chamber for treating exhaust gas using an inductively coupled plasma reaction; and a pair of gas injection nozzles including a first gas injection nozzle and a second gas injection nozzle for injecting a reactive gas, wherein the reaction chamber includes a chamber body providing a plasma reaction space in which the inductively coupled plasma reaction occurs; , a gas inlet pipe portion providing a gas inlet passage through which the exhaust gas flows into the reaction space, wherein the first gas spray nozzle and the second gas spray nozzle are installed in the gas inlet tube portion to provide the gas inlet passage The first gas jet nozzle jets the reactive gas toward the second gas jet nozzle, and the second gas jet nozzle jets the reactive gas toward the first gas jet nozzle. Exhaust gas treatment equipment for facilities is provided.

According to the present invention, all of the objects of the present invention described above can be achieved. Specifically, since oxygen gas is injected into the plasma reaction space of the plasma reactor and the zirconium source gas component is thermally decomposed in the high-temperature plasma reaction space, the reactivity with oxygen gas is improved, thereby solving the problem of solid growth due to incomplete reaction. .

1 is a block diagram illustrating a schematic configuration of a semiconductor manufacturing facility in which exhaust gas treatment equipment is installed according to an embodiment of the present invention.

FIG. 2 is a perspective view of a plasma reactor provided in the exhaust gas treatment equipment shown in FIG. 1 .

3 is a longitudinal cross-sectional view showing the plasma reactor shown in FIG. 2 taken along line A-A'.

FIG. 4 is a plan view of the plasma reactor shown in FIG. 2 .

5 is a photograph showing that when oxygen gas is simply injected into the pipe, solids are generated and grown on the inner wall surface of the pipe opposite to the injection port.

6 to 8 are views illustrating flow analysis of oxygen gas for explaining the growth of the solid shown in FIG. 5 .

9 and 10 are a longitudinal cross-sectional view and a plan view of a plasma reactor according to another embodiment of the present invention, respectively.

11 is a plan view of a plasma reactor according to another embodiment of the present invention.

Hereinafter, the configuration and operation of the embodiment of the present invention will be described in detail with reference to the drawings.

1 is a block diagram showing a schematic configuration of a semiconductor manufacturing facility installed with exhaust gas treatment equipment according to an embodiment of the present invention. Referring to FIG. 1 , a semiconductor manufacturing facility 100 includes a semiconductor manufacturing equipment 110 in which a semiconductor manufacturing process is performed, an exhaust equipment 120 for discharging gas from the semiconductor manufacturing equipment 110 , and an exhaust equipment 120 . and an exhaust gas treatment equipment 130 for processing the gas discharged from the semiconductor manufacturing equipment 110 by the

The semiconductor manufacturing equipment 110 includes a process chamber 112 in which a semiconductor manufacturing process using various process gases is performed. The process chamber 112 includes all types of process chambers commonly used for semiconductor manufacturing in the field of semiconductor manufacturing equipment. The residual gas generated in the process chamber 112 is purified by the exhaust gas treatment equipment 130 while being discharged to the outside by the exhaust equipment 130 .

The exhaust device 120 discharges the residual gas generated in the process chamber 112 . The exhaust equipment 120 includes a vacuum pump 122 , a chamber exhaust pipe 124 connecting the process chamber 112 and the vacuum pump 122 , and a pump exhaust pipe 126 extending downstream from the vacuum pump 122 . be prepared

The vacuum pump 122 forms a negative pressure on the side of the process chamber 112 through the chamber exhaust pipe 124 connecting the process chamber 112 and the vacuum pump 122 to discharge the residual gas of the process chamber 112 . , since it includes the configuration of a vacuum pump commonly used in the field of semiconductor manufacturing equipment, a detailed description thereof will be omitted.

The chamber exhaust pipe 124 connects the exhaust port of the process chamber 112 and the suction port of the vacuum pump 122 between the process chamber 112 and the vacuum pump 122 . The residual gas of the process chamber 112 is discharged as exhaust gas through the chamber exhaust pipe 124 by the negative pressure generated by the vacuum pump 122 .

A pump exhaust pipe 126 extends downstream from the vacuum pump 122 . The pump exhaust pipe 126 is connected to the outlet of the vacuum pump 122 so that the exhaust gas discharged from the vacuum pump 122 flows.

The exhaust gas treatment equipment 130 processes and purifies the gas discharged from the semiconductor manufacturing equipment 110 by the exhaust equipment 120 . The exhaust gas treatment equipment 130 includes a scrubber 140 for treating the exhaust gas discharged from the vacuum pump 122 , and a plasma reactor 150 for treating the exhaust gas discharged from the process chamber 112 using plasma, and , a gas supply 180 for supplying a reactive gas to the plasma reactor 150 , and a trap 190 for collecting powder contained in the exhaust gas discharged from the plasma reactor 150 .

The scrubber 140 is connected to the downstream end of the pump exhaust pipe 126 to treat the exhaust gas discharged from the vacuum pump 122 . The scrubber 140 includes all types of scrubbers commonly used to treat exhaust gas in the field of semiconductor manufacturing equipment technology.

The plasma reactor 150 is installed on the chamber exhaust pipe 124 to decompose and process the exhaust gas discharged from the process chamber 112 using plasma. 2-4 the plasma reactor 150 is shown in perspective, longitudinal, and plan views. 2 to 4 , the plasma reactor 150 includes a reaction chamber 160 , a ferrite core 170 disposed to surround the reaction chamber 160 , and a reactive gas into the reaction chamber 160 . A first gas injection nozzle 180b and a second gas injection nozzle 180a for spraying are provided. In the present embodiment, the plasma reactor 150 is an inductively coupled plasma reactor that processes exhaust gas flowing along the chamber exhaust pipe ( 124 in FIG. 1 ) using inductively coupled plasma. Although not shown, the plasma reactor 150 operates by supplying AC power appropriate to the antenna coil wound around the ferrite core 170 by a power source (not shown).

The reaction chamber 160 is a chamber having a generally toroidal shape, and the reaction chamber 160 has a plasma reaction space 163 in which a plasma reaction occurs with respect to a gas to be processed, and the plasma reaction space 163 communicates with the plasma. A gas inlet passage 164a through which exhaust gas introduced into the reaction space 163 flows, and a gas discharge passage 164b in communication with the plasma reaction space 163 and through which exhaust gas discharged from the plasma reaction space 163 flows. is formed

The reaction chamber 160 includes a chamber body 161 forming a plasma reaction space 163 therein, a gas inlet pipe 162a extending from the chamber body 161 and forming a gas inlet passage 164a therein, and , and extending from the chamber body 161 and having a gas discharge pipe portion 162b forming a gas discharge passage 164b therein.

The chamber body 161 forms a plasma reaction space 163 in which a plasma reaction with respect to the gas to be processed occurs. Although not shown, an igniter for initial plasma ignition is installed in the chamber body 161 . The chamber body 161 includes a first base part 161a, a second base part 161b positioned to be spaced apart from the first base part 161a, and a first base part 161a and a second base part 161b. ) is provided with first and second connecting pipe portions (166, 169) for connecting.

The first base part 161a provides a first internal space 1611a therein, and the first base part 161a has a gas inlet 1612a that communicates the first internal space 1611a with the gas inlet passage 164a. ) is formed. The first base part 161a is positioned above the second base part 161b, and the gas inlet pipe part 162a is connected to the upper part of the first base part 161a. The first connector part 166 and the second connector part 169 are connected to both lower sides of the first base part 161a.

The second base portion 161b provides a second inner space 1611b therein, and the second base portion 161b has a gas outlet 1612b that communicates the second inner space 1611b with the gas discharge passage 164b. ) is formed. The second base part 161b is located below the first base part 161a, and the gas discharge pipe part 162b is connected to the lower part of the second base part 161b. The first connector part 166 and the second connector part 169 are connected to both upper sides of the second base part 161b.

The first connector part 166 and the second connector part 169 are arranged in parallel to connect the first base part 161a positioned above and the second base part 161b positioned below. The first connector part 166 extends vertically between the first base part 161a and the second base part 161b. A first connection passage 165 is formed inside the first connection pipe part 166 . The first internal space 1611a formed inside the first base part 161a and the second internal space 1611b formed inside the second base part 161b communicate through the first connection passage 165 . The second connecting pipe part 169 extends in the vertical direction between the first base part 161a and the second base part 161b. A second connection passage 167 is formed inside the second connection pipe part 169 . The first internal space 1611a formed inside the first base part 161a and the second internal space 1611b formed inside the second base part 161b communicate through the second connection passage 167 . The first connector part 166 and the second connector part 169 are disposed to be spaced apart, so that a slot 169a is formed between the first connector part 166 and the second connector part 169 .

A first internal space 1611a, a second internal space 1611b, a first connection passage 165 and a second connection passage 167 connected to each other in the chamber body 161 form a plasma reaction space 163 . do. That is, in the present embodiment, the plasma reaction space 163 includes a first connection passage 165 and a second connection passage 167 between the gas inlet passage 164a and the gas exhaust passage 164b respectively arranged vertically. are separated and arranged side by side, the upstream end of the first connection passage 165 and the upstream end of the second connection passage 167 are communicated by the first internal space 1611a, and the first connection passage 165 ) and the downstream end of the second connection passage 167 are formed to communicate with each other by the second inner space 1611b. Plasma is generated along an annular discharge loop R as shown by a broken line in FIG. 3 in the plasma reaction space 163 . The present invention is not limited to the structure of the chamber body 161 as shown in the drawings. The chamber body 161 may be any structure capable of forming a ring-shaped plasma reaction space 163 therein, and this is also within the scope of the present invention. It is preferable that the chamber body 161 be disposed so that the ring-shaped plasma reaction space 163 formed inside the chamber body 161 has an erect shape. The exhaust gas introduced into the plasma reaction space 163 through the gas inlet 1612a is branched into the first connection passage 165 and the second connection passage 167 and flows into the plasma reaction space through the gas outlet 1612b. (163).

The gas inlet pipe part 162a is formed to extend upwardly from the upper part of the first base part 161a. A gas inlet passage 164a extending in the vertical direction is formed in the gas inlet pipe portion 162a. The gas inlet passage 164a communicates with the first internal space 1611a through the gas inlet 1612a. The central axis X of the gas inlet passage 164a passes between the first connecting passage 165 and the second connecting passage 167 as the central axis of the gas inlet pipe portion 162a. A first gas injection nozzle 180b and a second gas injection nozzle 180a are installed in the gas inlet pipe part 162a. Exhaust gas and oxygen gas injected from the first and second

gas injection nozzles

180b and 180a are introduced into the plasma reaction space 163 through the gas inlet passage 164a.

The gas discharge pipe portion 162b is formed to extend downward from the lower portion of the second base portion 161b. A gas discharge passage 164b extending in the vertical direction is formed in the gas discharge pipe portion 162b. The gas discharge passage 164b communicates with the second internal space 1611b through the gas discharge port 1612b. The gas of the plasma reaction space 163 is discharged to the outside through the gas discharge passage 164b. The gas discharge pipe part 162b is disposed coaxially with the gas inlet pipe part 162a. The exhaust gas discharged from the plasma reactor 150 through the gas discharge passage 164b is introduced into the trap 190 .

A ferrite core 170 is disposed to surround the reaction chamber 160 . The ferrite core 170 includes an edge wall 171 and a partition wall 175 positioned inside the edge wall 171 . The ferrite core 170 is disposed to surround a part of the plasma reaction space 163 formed in the reaction chamber 160 . The edge wall 171 extends along the circumferential direction to form a substantially rectangular shape. The first connecting pipe part 166 and the second connecting pipe part 169 pass through the inner region of the edge wall 171 . The partition wall 175 extends in a straight line from the inner region of the edge wall 171 to connect two opposing wall portions. The edge wall 171 passes through the slot 169a formed between the two connecting

pipe portions

166 and 169 . Accordingly, each of the first connector part 166 and the second connector part 169 is surrounded by the ferrite core 170 along the circumferential direction. Although not shown, an antenna coil is wound around the ferrite core 170 , and an appropriate AC power is supplied to the antenna coil.

The first gas injection nozzle 180b and the second gas injection nozzle 180a are installed in the gas inlet pipe part 162a and receive oxygen gas (O ₂ ), which is a reactive gas supplied from the gas supply unit 180, into the reaction chamber 160 . It is sprayed toward the plasma reaction space 163 formed in the inside. To this end, a gas injection hole through which gas is injected is formed in each of the first gas injection nozzle 180b and the second gas injection nozzle 180a. The decomposition performance of the exhaust gas in the plasma reaction space 163 is improved by the oxygen gas injected through the first gas injection nozzle 180b and the second gas injection nozzle 180a. The first gas injection nozzle 180b and the second gas injection nozzle 180a form the reactive gas injection means of the present invention.

The first gas injection nozzle 180b is installed to be positioned on the side of the second connection pipe 169 on the circumferential direction of the gas inlet pipe part 162a, and the oxygen gas supplied from the gas supply unit 180 is supplied to the reaction chamber 160 of the reaction chamber 160 . It sprays toward the first connection passage 165 formed therein. Accordingly, the oxygen gas injected from the first gas injection nozzle 180b is the first connection passage 165 from the upper portion of the second connection passage 167 in the gas inlet passage 164a, as indicated by the dashed-dotted arrow. ) and flows in an inclined downward direction, passes through the gas inlet 1612a, and then flows into the first connection passage 165 .

The second gas injection nozzle 180a is installed to be positioned on the side of the first connection pipe 166 in the circumferential direction of the gas inlet pipe part 162a, and oxygen gas supplied from the gas supply unit 180 is supplied to the reaction chamber 160 in the circumferential direction. It sprays toward the second connection passage 167 formed therein. Accordingly, the oxygen gas injected from the second gas injection nozzle 180a is the second connection passage 167 from the upper portion of the first connection passage 165 in the gas inlet passage 164a as indicated by the dashed-dotted arrow. ) and flows in an inclined downward direction, passes through the gas inlet 1612a, and then flows into the second connection passage 167 .

The gas supply 180 stores oxygen gas as a reactive gas injected through the first gas injection nozzle 180b and the second gas injection nozzle 180a, and the first gas injection nozzle 180b through the gas supply pipe 185. and the second gas injection nozzle 180a.

The trap 190 collects powder contained in the exhaust gas discharged from the plasma reactor 150 . The trap 190 includes all types of traps commonly used in the field of semiconductor manufacturing equipment to collect powder contained in exhaust gas. The trap 190 is disposed below the plasma reactor 150 on the chamber exhaust pipe 124 to collect powder contained in the exhaust gas discharged through the gas discharge pipe part 162b of the reaction chamber 160 .

A characteristic configuration of the present invention is that the first gas injection nozzle 180b and the second gas injection nozzle 180a spray oxygen gas, which is a reactive gas, toward the plasma reaction space 163 formed in the reaction chamber 160 . will be. Hereinafter, the operation according to the characteristic configuration of the present invention will be described.

When oxygen gas is simply injected into the pipe, as shown in the photo of FIG. 5 , solids that are generated and grow on the inner wall surface of the pipe opposite the injection port are generated. The inventor of the present invention analyzed the flow of oxygen gas injected into the pipe to determine the cause of the generation of such solids, and as a result, as shown in FIGS. 6 to 8 , on the inner wall surface of the pipe opposite to the oxygen gas injection port It was found that an oxygen-rich region was generated to create an environment in which powder was easily generated locally. In addition, the inventor of the present invention, when oxygen gas is simply injected into the pipe, the solid material that is generated and grown on the inner wall surface of the pipe opposite the injection port is CpZr (NMe ₂ ) used as a precursor for forming a zirconium oxide thin film in the semiconductor manufacturing process. ) ₃ found that when a zirconium source gas component reacts with oxygen gas to produce zirconium oxide (ZrO ₂ ), it is an incomplete reaction product with a high nitrogen content formed by an incomplete reaction, and the cause of the incomplete reaction is zirconium source gas It was found that complete oxidation does not occur by reacting at a temperature lower than the thermal decomposition temperature (200-250° C.) of the component. In the present invention, oxygen gas is injected into the plasma reaction space 163 , and the zirconium source gas component and oxygen react in the high-temperature plasma reaction space 163 to generate zirconium oxide. Since the zirconium source gas component is thermally decomposed in the high-temperature plasma reaction space 163 , the reactivity with oxygen gas is improved, so that the problem of solid material growth due to incomplete reaction is solved. The following reaction formula shows the decomposition and substitution reaction of the zirconium source gas component in the plasma reaction space 163 .

[reaction formula]

Zr Source(CpZr(NMe ₂ ) ₃ ) + Plasma + O ₂ → ZrO ₂ (S) + NO(g)/NO ₂ (g) + CO(g)/CO ₂ (g) + H ₂ O(g) + C _x H _y (g)

Zirconium oxide (ZrO ₂ ) generated in the plasma reaction space 163 is in the form of a high-purity and stable fine powder, and is collected in the trap 190 disposed below the plasma reactor 150 .

9 and 10 show a plasma reactor according to another embodiment of the present invention as a longitudinal cross-sectional view and a plan view. 9 and 10 , the plasma reactor 250 includes a reaction chamber 160 , a ferrite core 170 disposed to surround the reaction chamber 160 , and a reactive gas into the reaction chamber 160 . A first gas injection nozzle 280b and a second gas injection nozzle 280a for spraying are provided. In the plasma reactor 250 , except for the configuration of the first gas injection nozzle 280b and the second gas injection nozzle 280a , the remaining configurations are the same as those of the plasma reactor 150 illustrated in FIGS. 2 to 4 , so a detailed description thereof is omitted, and only the configuration and operation of the first gas injection nozzle 280b and the second gas injection nozzle 280a will be described in detail.

The first gas injection nozzle 280b and the second gas injection nozzle 280a are installed in the gas inlet pipe part 162a so that a reactive gas such as oxygen gas (O ₂ ) is formed inside the gas inlet pipe part 162a. It is injected into the inlet passage (164a). The reactive gas injected through the first gas injection nozzle 280b and the second gas injection nozzle 280a is introduced into the plasma reaction space 163 together with the exhaust gas to be treated through the gas inlet passage 164a, so that the plasma reaction space (163) to improve the decomposition performance of the exhaust gas. The first gas injection nozzle 280b and the second gas injection nozzle 280a form a gas injection nozzle pair according to the present invention. Accordingly, the first gas injection hole formed in the first gas injection nozzle 280b and the second gas injection hole formed in the second gas injection nozzle 280a form a pair of gas injection holes according to the present invention. In the present embodiment, the first gas injection nozzle 280b and the second gas injection nozzle 280a are positioned at a point symmetrical to each other with respect to the central axis X of the gas inlet passage 164a, and the gas inlet pipe part 162a. It is described as being located opposite to each other on the outer periphery of.

The first gas injection nozzle 280b is installed in the gas inlet pipe part 162a to inject a reactive gas such as oxygen gas toward the center of the gas inlet passage 164a as indicated by an arrow. The gas injection direction of the first gas injection nozzle 280b is toward the second gas injection nozzle 280a located opposite to the first gas injection nozzle 280b.

The second gas injection nozzle 280a is installed in the gas inlet pipe part 162a to inject a reactive gas such as oxygen gas toward the center of the gas inlet passage 164a as indicated by an arrow. The gas injection direction of the second gas injection nozzle 280a is toward the first gas injection nozzle 280b located opposite to the second gas injection nozzle 280a.

The oxygen gas injected from the first gas injection nozzle 280b and the oxygen gas injected from the second gas injection nozzle 280a collide at the center of the gas inlet passage 164a. Accordingly, the oxygen gas in direct contact with the inner wall surface of the gas inlet pipe portion 162a is minimized to prevent the generation of solids.

In this embodiment, it is described that the first gas injection nozzle 280b injects oxygen gas toward the second injection nozzle 280a and the second injection nozzle 280a injects the oxygen gas toward the first injection nozzle 280b, On the contrary, the same effect can be obtained by disposing the two

gas injection nozzles

280b and 280a in various shapes so that the gas injection direction of the first gas injection nozzle 280b and the gas injection direction of the second gas injection nozzle 280a intersect. and this is also within the scope of the present invention.

In this embodiment, one gas injection nozzle pair is described as an example, but otherwise, there may be two or more gas injection nozzle pairs arranged in this way, and this also falls within the scope of the present invention.

11 is a plan view of a plasma reactor according to another embodiment of the present invention. Referring to FIG. 11 , the plasma reactor 350 includes a reaction chamber 160 , a ferrite core 170 disposed to surround the reaction chamber 160 , and the inside of the reaction chamber 160 . and gas injection means for injecting a reactive gas into the furnace. In the plasma reactor 350 except for the gas injection means, the rest of the configuration is the same as the plasma reactor 250 shown in FIGS. 9 and 10 , so a detailed description thereof will be omitted, and only the configuration and action of the gas injection means will be described in detail. do.

In the embodiment shown in FIG. 11 , the gas injection means includes a ring-shaped gas flow pipe 390 surrounding the gas inlet pipe part 162a from the outside, and a plurality of

gas injection holes

380a and 380b formed in the gas inlet pipe part 162a. , 381a, 381b, 382a, 382b).

The gas flow pipe 390 is a pipe that surrounds the gas inlet pipe part 162a from the outside in a ring shape, and a passage through which the reactive gas flows along the circumferential direction of the gas inlet pipe part 162a is formed in the gas flow pipe 390 . do. A gas supply pipe 395 is connected to the gas flow pipe 390 . A reactive gas is supplied into the gas flow pipe 390 from the outside through the gas supply pipe 395 . The reactive gas flowing in the gas flow tube 390 is injected into the gas inlet passage 164a through the plurality of

gas injection holes

380a, 380b, 381a, 381b, 382a, 382b formed in the gas inlet tube portion 162a.

The plurality of

gas injection holes

380a, 380b, 381a, 381b, 382a, and 382b are formed in the gas inlet pipe part 162 . Each of the plurality of

gas injection ports

380a, 380b, 381a, 381b, 382a, and 382b communicates with the gas flow pipe 390 . In this embodiment, it will be described that the plurality of

gas injection holes

380a, 380b, 381a, 381b, 382a, 382b are arranged at equal intervals along the circumferential direction of the gas inlet pipe part 162a. The reactive gas flowing in the gas flow pipe 390 through each of the plurality of

gas injection holes

380a, 380b, 381a, 381b, 382a, and 382b is injected into the gas inlet passage 164a. Among the plurality of

gas injection holes

380a, 380b, 381a, 381b, 382a, and 382b, two

gas injection holes

380a and 380b located opposite to each other form a first gas injection hole pair, and the other two gases located opposite to each other The injection holes 381a and 381b form a second pair of gas injection holes, and two other

gas injection holes

382a and 382b positioned opposite to each other form a third pair of gas injection holes. The direction in which each gas injection port pair injects gas is the same as that by the gas injection nozzle pair shown in FIGS. 9 and 10 .

In this embodiment, it is described that there are three pairs of gas injection holes, but unlike this, the number of pairs of gas injection holes may be two or less or four or more, and this also falls within the scope of the present invention.

Although the present invention has been described through the above examples, the present invention is not limited thereto. The above embodiments may be modified or changed without departing from the spirit and scope of the present invention, and those skilled in the art will recognize that such modifications and changes also belong to the present invention.

Claims

a reaction chamber for treating exhaust gas using an inductively coupled plasma reaction; and

Reactive gas injection means for injecting the reactive gas,

The reaction chamber provides a plasma reaction space in which the inductively coupled plasma reaction occurs, and includes a chamber body in which a gas inlet and a gas outlet communicating with the plasma reaction space are formed,

The exhaust gas is introduced into the plasma reaction space through the gas inlet, and the exhaust gas is discharged from the plasma reaction space through the gas outlet,

wherein the reactive gas injection means injects the reactive gas toward the plasma reaction space through the gas inlet outside the upstream side of the plasma reaction space,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
The method according to claim 1,

A first connection passage and a second connection passage communicating with the gas inlet are formed in the plasma reaction space,

The exhaust gas introduced into the plasma reaction space through the gas inlet is branched and flows through the first connection passage and the second connection passage, respectively,

The reactive gas injection means includes a first gas injection port for injecting the reactive gas toward the first connection passage and a second gas injection port for injecting the reactive gas toward the second connection passage,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
3. The method according to claim 2,

The first gas injection port and the second gas injection port are located in a gas inlet pipe extending from the chamber body to the outside,

A gas inlet passage communicating with the plasma reaction space through the gas inlet is formed in the gas inlet pipe part,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
4. The method according to claim 3,

The first connection passage and the second connection passage are disposed on both sides with the gas inlet therebetween,

The reactive gas is injected obliquely to the central axis of the gas inlet passage so that the reactive gas flows from the second connection passage side to the first connection passage side through the first gas injection port,

Through the second gas injection port, the reactive gas is injected obliquely to the central axis so that the reactive gas flows from the first connection passage side to the second connection passage side.

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
The method according to claim 1,

The reaction chamber is arranged such that the gas inlet is located above the plasma reaction space,

The reactive gas is sprayed downward from the upper portion of the gas inlet toward the plasma reaction space,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
a reaction chamber for treating exhaust gas using an inductively coupled plasma reaction; and

It includes a gas injection port pair having a first gas injection port and a second gas injection port through which the reactive gas is injected,

The reaction chamber includes a chamber body providing a plasma reaction space in which the inductively coupled plasma reaction occurs, and a gas inlet pipe portion providing a gas inlet passage through which the exhaust gas flows into the reaction space,

The reactive gas is located in the gas inlet pipe portion through the first gas injection port and the second gas injection port and is injected into the gas inlet passage,

The gas injection port pair is arranged such that the gas injection direction through the first gas injection hole and the gas direction through the second gas injection hole cross in the gas inlet passage,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
7. The method of claim 6,

The gas injected through the first gas injection port is directed toward the second gas injection port,

The gas injected through the second gas injection port is directed toward the first gas injection port,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
7. The method of claim 6,

The gas injection port pair is a plurality,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
7. The method of claim 6,

The first gas injection hole and the second gas injection hole are located opposite to each other on the outer periphery of the gas inlet pipe portion, so that the reactive gas is injected toward the center of the gas inlet passage,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
7. The method according to claim 1 or 6,

The reactive gas is oxygen gas,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
11. The method of claim 10,

In the plasma reaction space, zirconium and the oxygen gas react to generate zirconium oxide,

The zirconium is formed by thermal decomposition of the zirconium source gas contained in the exhaust gas in the plasma reaction space,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
12. The method of claim 11,

The zirconium source gas is CpZr(NMe 2 ) 3 which is used as a precursor for forming a zirconium oxide thin film,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
7. The method according to claim 1 or 6,

Further comprising a trap for collecting powder contained in the exhaust gas discharged from the reaction chamber,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
a plasma reactor for treating exhaust gas using an inductively coupled plasma reaction; and

It includes a gas supplier for supplying a reactive gas to the plasma reactor,

The plasma reactor includes a chamber body providing a plasma reaction space in which the inductively coupled plasma reaction occurs, a gas inlet pipe extending from the chamber body and having a gas inlet passage formed therein, and surrounding the plasma reaction space. A ferrite core disposed outside the chamber body, an antenna coil wound around the ferrite core and to which AC power is applied, and reactive gas injection means for spraying the reactive gas,

A gas inlet and a gas outlet communicating with the plasma reaction space are formed in the chamber body,

The gas inlet passage extends from the gas inlet and communicates with the plasma reaction space,

The plasma reaction space includes a first inner space communicating with the gas inlet, a second inner space communicating with the gas outlet and spaced apart from the first inner space, the first inner space and the second inner space A first connection passage and a second connection passage for communicating are formed,

The first connection passage and the second connection passage are arranged side by side with the gas inlet therebetween in a state of being separated from each other,

After the exhaust gas flows into the first internal space through the gas inlet, it branches and flows into the first connection passage and the second connection passage, passes through the second interior space, and is discharged through the gas outlet;

Plasma is generated in the plasma reaction space by AC power applied to the antenna coil along an annular discharge loop connecting the first inner space, the second inner space, and the first connecting passage and the second connecting passage. and

The reactive gas injection means includes a first gas injection port located in the gas inlet pipe and injecting the reactive gas toward the first connection passage, and a first gas injection port located in the gas inlet tube and injecting the reactive gas toward the second connection passage. and a second gas injection port to

In the first gas injection hole, the reactive gas injected from the first gas injection hole is injected obliquely to a central axis of the gas inlet passage, and flows from the second connection passage side to the first connection passage side to cross the gas inlet passage. It is positioned so as to

In the second gas injection port, the reactive gas injected from the second gas injection port is injected obliquely to the central axis of the gas inlet passage, and flows from the first connection passage side to the second connection passage side to cross the gas inlet passage. positioned so as to

Exhaust gas treatment equipment for semiconductor manufacturing facilities.
a plasma reactor for treating exhaust gas using an inductively coupled plasma reaction; and

It includes a gas supplier for supplying a reactive gas to the plasma reactor,

The plasma reactor includes a chamber body providing a plasma reaction space in which the inductively coupled plasma reaction occurs, a gas inlet pipe extending from the chamber body and having a gas inlet passage formed therein, and surrounding the plasma reaction space. A ferrite core disposed outside the chamber body, an antenna coil wound around the ferrite core and to which AC power is applied, and a gas injection port pair comprising a first gas injection port and a second gas injection port for injecting the reactive gas, ,

A gas inlet and a gas outlet communicating with the plasma reaction space are formed in the chamber body,

The gas inlet passage extends from the gas inlet and communicates with the plasma reaction space,

The plasma reaction space includes a first inner space communicating with the gas inlet, a second inner space communicating with the gas outlet and spaced apart from the first inner space, the first inner space and the second inner space A first connection passage and a second connection passage for communicating are formed,

The first connection passage and the second connection passage are arranged side by side with the gas inlet therebetween in a state of being separated from each other,

After the exhaust gas flows into the first internal space through the gas inlet, it branches and flows into the first connection passage and the second connection passage, passes through the second interior space, and is discharged through the gas outlet;

Plasma is generated in the plasma reaction space by AC power applied to the antenna coil along an annular discharge loop connecting the first inner space, the second inner space, and the first connecting passage and the second connecting passage. and

The first gas injection port and the second gas injection port are located in the gas inlet pipe portion to inject the reactive gas into the gas inlet passage,

The first gas injection port and the second gas injection port are located opposite to each other on the outer periphery of the gas inlet pipe part,

The reactive gas injected through the first gas injection port is directed toward the second gas injection port,

The reactive gas injected through the second gas injection port is directed toward the first gas injection port,

Exhaust gas treatment equipment for semiconductor manufacturing facilities.