TWI798907B - Exhaust gas treatment equipment for semiconductor manufacturing facilities - Google Patents

Exhaust gas treatment equipment for semiconductor manufacturing facilities Download PDF

Info

Publication number
TWI798907B
TWI798907B TW110140697A TW110140697A TWI798907B TW I798907 B TWI798907 B TW I798907B TW 110140697 A TW110140697 A TW 110140697A TW 110140697 A TW110140697 A TW 110140697A TW I798907 B TWI798907 B TW I798907B
Authority
TW
Taiwan
Prior art keywords
gas
reaction
injection port
channel
gas inlet
Prior art date
Application number
TW110140697A
Other languages
Chinese (zh)
Other versions
TW202224066A (en
Inventor
裵辰鎬
柳泰旭
李宗澤
羅正均
Original Assignee
南韓商Ｌｏｔ Ｃｅｓ有限公司
南韓商Ｌｏｔ真空股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商Ｌｏｔ Ｃｅｓ有限公司, 南韓商Ｌｏｔ真空股份有限公司 filed Critical 南韓商Ｌｏｔ Ｃｅｓ有限公司
Publication of TW202224066A publication Critical patent/TW202224066A/en
Application granted granted Critical
Publication of TWI798907B publication Critical patent/TWI798907B/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818—Employing electrical discharges or the generation of a plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Treating Waste Gases (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Glass Compositions (AREA)
  • Separation Of Gases By Adsorption (AREA)
  • Plasma Technology (AREA)

Abstract

Provided is exhaust gas treatment equipment for semiconductor manufacturing facilities, the exhaust gas treatment equipment including a reaction chamber configured to treat exhaust gas by using an inductively coupled plasma reaction, and a reactive gas injection unit configured to inject a reactive gas, wherein the reaction chamber includes a chamber body providing a plasma reaction space in which the inductively coupled plasma reaction occurs, therein and the chamber body having a gas inlet and a gas outlet communicating with the plasma reaction space, and the exhaust gas is introduced into the plasma reaction space through the gas inlet, and the exhaust gas is discharged from the plasma reaction space through the gas outlet, and the reactive gas injection unit injects the reactive gas toward the plasma reaction space through the gas inlet outside an upstream side of the plasma reaction space.

Description

用於半導體製造設施的廢氣處理設備 Exhaust gas treatment equipment for semiconductor manufacturing facilities

本發明涉及一種用於多個半導體製造設施的技術，更具體地，涉及用於通過使用電漿處理從處理腔室排出的廢氣的設備。 The present invention relates to a technique used in a plurality of semiconductor manufacturing facilities, and more particularly, to an apparatus for treating exhaust gas discharged from a process chamber by using plasma.

半導體器件是通過在處理腔室中對晶圓重複執行例如光刻、蝕刻、擴散及金屬沉積等多道工序製造而成。在半導體製造工序中，會使用各種處理氣體，並且在該工序完成後，該處理腔室中會存在殘留氣體。由於該處理腔室內的該殘留氣體含有多個有毒成分，因此，該殘留氣體由真空泵排出，並且由廢氣處理裝置淨化。由於多個廢氣在該真空泵內以100℃以上的高溫壓縮，該廢氣容易發生相變，因此，容易在該真空泵內形成多個固體副產物，並且積聚在該真空泵中，造成該真空泵故障。 Semiconductor devices are manufactured by repeatedly performing multiple processes such as photolithography, etching, diffusion, and metal deposition on wafers in a processing chamber. In a semiconductor manufacturing process, various process gases are used, and after the process is completed, residual gases exist in the process chamber. Since the residual gas in the processing chamber contains many toxic components, the residual gas is discharged by a vacuum pump and purified by a waste gas treatment device. Since the waste gas is compressed at a high temperature above 100°C in the vacuum pump, the waste gas is prone to phase change, and therefore, many solid by-products are easily formed in the vacuum pump and accumulate in the vacuum pump, causing the vacuum pump to fail.

為了防止由於該廢氣而導致的真空泵故障，近期開發及使用了一種在連接該處理腔室及該真空泵的導管中安裝電漿反應器的技術，該電漿反應器通過使用電感耦合電漿(ICP)來分解氣體(在韓國專利註冊號10-1448449中描述的配置)。將氧氣等反應氣體注入該電漿反應器的上游管道，以提高該電漿 反應器中該廢氣的分解性能，然而，注入該氧氣的端口存在多個固體產生及生長在對面的壁部上的問題。 In order to prevent the failure of the vacuum pump due to the exhaust gas, a technology of installing a plasma reactor in the conduit connecting the processing chamber and the vacuum pump has been recently developed and used. ) to decompose gas (configuration described in Korean Patent Registration No. 10-1448449). Inject reactive gases such as oxygen into the upstream pipeline of the plasma reactor to enhance the plasma The decomposition performance of the off-gas in the reactor, however, the port where the oxygen is injected presents problems with the generation of solids and growth on the opposite wall.

本發明的目的在於解決通過在使用電感耦合電漿對氣體進行減壓的電漿反應器的上游管中注入氧氣的上游導管的管壁表面上產生及生長多個固體。 The object of the present invention is to solve the generation and growth of multiple solids on the pipe wall surface of the upstream pipe of the upstream pipe of the plasma reactor for depressurizing the gas by using inductively coupled plasma to inject oxygen.

根據本發明的一個方面，提供了一種用於半導體製造設施的廢氣處理設備，該廢氣處理設備包括：反應腔室，該反應腔室被配置為通過使用電感耦合電漿反應來處理廢氣；以及反應氣體注入單元，該反應氣體注入單元被配置為注入反應氣體，其中該反應腔室包括腔室主體，該腔室主體提供電漿反應空間，在該電漿反應空間中發生該電感耦合電漿反應，該腔室主體具有與該電漿反應空間連通的氣體入口及氣體出口，並且該廢氣通過該氣體入口引入該電漿反應空間內，並且該廢氣通過該氣體出口從該電漿反應空間排出，以及該反應氣體注入單元在該電漿反應空間的上游側外側通過該氣體入口向該電漿反應空間注入該反應氣體。 According to an aspect of the present invention, there is provided an exhaust gas treatment apparatus for a semiconductor manufacturing facility, the exhaust gas treatment apparatus including: a reaction chamber configured to treat exhaust gas by using an inductively coupled plasma reaction; a gas injection unit configured to inject a reaction gas, wherein the reaction chamber includes a chamber body providing a plasma reaction space in which the inductively coupled plasma reaction occurs , the chamber main body has a gas inlet and a gas outlet communicating with the plasma reaction space, and the waste gas is introduced into the plasma reaction space through the gas inlet, and the waste gas is discharged from the plasma reaction space through the gas outlet, And the reaction gas injecting unit injects the reaction gas into the plasma reaction space through the gas inlet outside the upstream side of the plasma reaction space.

根據本發明的另一方面，提供了一種用於半導體製造設施的廢氣處理設備，該廢氣處理設備包括反應腔室以及一對氣體噴嘴，該反應腔室被配置為通過使用電感耦合電漿反應來處理廢氣，該對氣體噴嘴包括第一氣體噴嘴及第二氣體噴嘴，反應氣體通過該第一氣體噴嘴及該第二氣體噴嘴注入，其中該反應腔室包括：腔室主體，該腔室主體提供電漿反應空間，該電感耦合電漿 反應在該腔室主體中發生；氣體入口導管部分，提供氣體入口通道，該廢氣通過該氣體入口通道引入該電漿反應空間中，並且該第一氣體噴嘴及該第二氣體噴嘴安裝在該氣體入口導管部分內，向該氣體入口通道注入該反應氣體，該第一氣體噴嘴向該第二氣體噴嘴注入該反應氣體噴嘴，該第二氣體噴嘴向該第一氣體噴嘴注入該反應氣體。 According to another aspect of the present invention, there is provided an exhaust gas treatment apparatus for a semiconductor manufacturing facility, the exhaust gas treatment apparatus including a reaction chamber configured to process gas by using an inductively coupled plasma reaction, and a pair of gas nozzles. For exhaust gas treatment, the pair of gas nozzles includes a first gas nozzle and a second gas nozzle, through which reaction gas is injected, wherein the reaction chamber includes: a chamber body, the chamber body provides plasma reaction space, the inductively coupled plasma The reaction takes place in the chamber main body; the gas inlet conduit part provides a gas inlet channel through which the waste gas is introduced into the plasma reaction space, and the first gas nozzle and the second gas nozzle are installed in the gas inlet channel. In the inlet conduit part, the reaction gas is injected into the gas inlet channel, the first gas nozzle injects the reaction gas nozzle into the second gas nozzle, and the second gas nozzle injects the reaction gas into the first gas nozzle.

根據本發明，上述本發明的所有目的皆可以實現。具體地，由於氧氣被注入該電漿反應器的該電漿反應空間中，並且該鋯源氣體組分在高溫的該電漿反應空間中被熱分解，增強了與氧氣的反應性，從而解決了因不完全反應而導致的固體生長的問題。 According to the present invention, all the objects of the present invention described above can be achieved. Specifically, since oxygen is injected into the plasma reaction space of the plasma reactor, and the zirconium source gas component is thermally decomposed in the high temperature plasma reaction space, the reactivity with oxygen is enhanced, thereby solving Solved the problem of solid growth due to incomplete reaction.

100:半導體製造設施 100: Semiconductor manufacturing facilities

110:半導體製造設備 110:Semiconductor manufacturing equipment

112:處理腔室 112: processing chamber

120:排氣設備 120: exhaust equipment

122:真空泵 122: vacuum pump

124:腔室排氣管 124: Chamber exhaust pipe

126:泵排氣管 126: Pump exhaust pipe

130:廢氣處理設備 130: Exhaust gas treatment equipment

140:洗滌器 140: scrubber

150:電漿反應器 150: Plasma Reactor

160:反應腔室 160: reaction chamber

161:腔室主體 161: Chamber body

161a:第一基部 161a: first base

1611a:第一內部空間 1611a: First interior space

1611b:第二內部空間 1611b: Second interior space

1612a:氣體入口 1612a: Gas inlet

1612b:氣體出口 1612b: Gas outlet

161b:第二基部 161b: second base

162a:氣體入口導管部分 162a: Gas inlet conduit section

162b:氣體排放導管部分 162b: Gas discharge duct section

163:電漿反應空間 163: Plasma reaction space

164a:氣體入口通道 164a: Gas inlet channel

164b:氣體排出通道 164b: Gas discharge channel

165:第一連接通道 165: The first connection channel

166:第一連接導管部分 166: the first connecting conduit part

167:第二連接通道 167: Second connection channel

169:第二連接導管 169: the second connecting conduit

169a:凹槽 169a: Groove

170:鐵氧體磁芯 170: Ferrite core

171:邊緣壁部 171: edge wall

175:分隔壁部 175: partition wall

180:氣體供應單元 180: gas supply unit

180a:第二氣體注入噴嘴 180a: Second gas injection nozzle

180b:第一氣體注入噴嘴 180b: first gas injection nozzle

185:氣體供應管 185: gas supply pipe

190:收集器 190: collector

250:電漿反應器 250: Plasma Reactor

280b:第一氣體注入噴嘴 280b: First gas injection nozzle

280a:第二氣體注入噴嘴 280a: Second gas injection nozzle

350:電漿反應器 350: Plasma Reactor

380a、380b、381a、381b、382a及382b:氣體注入端口 380a, 380b, 381a, 381b, 382a, and 382b: gas injection ports

390:氣體流動導管 390: Gas Flow Conduit

395:氣體供應導管 395: Gas supply conduit

A-A':直線 A-A': Straight line

第1圖是示意性示出了本發明的一實施例的在半導體製造設備的廢氣處理裝置的配置的方塊圖。 FIG. 1 is a block diagram schematically showing the arrangement of an exhaust gas treatment device in a semiconductor manufacturing facility according to an embodiment of the present invention.

第2圖是第1圖所示的該廢氣處理設備中設有的電漿反應器的立體圖；第3圖是第2圖所示的該電漿反應器沿著第2圖的直線A-A'截取的縱向剖面圖；第4圖是第2圖所示的該電漿反應器的平面圖；第5圖示出了當簡易地向該導管內注入氧氣時，在相對於注入端口的導管的內壁表面上產生並生長的多個固體的照片；第6圖至第8圖示出了用於描述第5圖所示的該多個固體的生長的氧氣流動分析的多個視圖； 第9圖及第10圖分別是根據本發明另實施例的電漿反應器的縱向剖面圖及平面圖；及第11圖是根據本發明另實施例的電漿反應器的平面圖。 Figure 2 is a perspective view of the plasma reactor provided in the exhaust gas treatment equipment shown in Figure 1; Figure 3 is the plasma reactor shown in Figure 2 along the line A-A in Figure 2 'Intercepted longitudinal sectional view; Fig. 4 is a plan view of the plasma reactor shown in Fig. 2; Fig. 5 shows that when oxygen is simply injected into the conduit, the position of the conduit relative to the injection port Photographs of a plurality of solids produced and grown on the inner wall surface; Figures 6 to 8 show views of oxygen flow analysis used to describe the growth of the plurality of solids shown in Figure 5; FIG. 9 and FIG. 10 are respectively a longitudinal sectional view and a plan view of a plasma reactor according to another embodiment of the present invention; and FIG. 11 is a plan view of a plasma reactor according to another embodiment of the present invention.

在下文中，將參照附圖詳細描述本發明的實施例的配置及操作。 Hereinafter, configurations and operations of embodiments of the present invention will be described in detail with reference to the accompanying drawings.

第1圖是示意性示出了本發明的實施例的在半導體製造設備的廢氣處理裝置的配置的方塊圖。請參閱第1圖，半導體製造設施100包括執行半導體製造工序的半導體製造設備110、用於從該半導體製造設備110排出氣體的排氣設備120、以及用於處理通過該排氣設備120從該半導體製造設備110排出的該氣體的廢氣處理設備130。 FIG. 1 is a block diagram schematically showing the arrangement of an exhaust gas treatment device in a semiconductor manufacturing facility according to an embodiment of the present invention. Please refer to FIG. 1 , a semiconductor manufacturing facility 100 includes semiconductor manufacturing equipment 110 that performs a semiconductor manufacturing process, an exhaust device 120 for exhausting gas from the semiconductor manufacturing The exhaust gas treatment equipment 130 of the gas discharged from the manufacturing equipment 110 .

該半導體製造設備110包括處理腔室112，在該處理腔室112中通過使用各種處理氣體來執行半導體製造工序。該處理腔室112包括半導體製造設備領域中的半導體製程常用的任何類型的處理腔室。在該處理腔室112中產生的殘餘氣體由該廢氣處理設備130淨化，而該殘餘氣體由該排氣設備120排放到外部。 The semiconductor manufacturing apparatus 110 includes a processing chamber 112 in which semiconductor manufacturing processes are performed by using various processing gases. The processing chamber 112 includes any type of processing chamber commonly used in semiconductor processing in the field of semiconductor manufacturing equipment. The residual gas generated in the processing chamber 112 is purified by the waste gas treatment device 130 , and the residual gas is discharged to the outside by the exhaust device 120 .

該排氣裝置120排出該處理腔室112中產生的該殘留氣體，該排氣裝置120包括真空泵122、將該處理腔室112連接到該真空泵122的腔室排氣管124以及從該真空泵122向下游延伸的泵排氣管126。 The exhaust device 120 discharges the residual gas generated in the processing chamber 112, and the exhaust device 120 includes a vacuum pump 122, a chamber exhaust pipe 124 connecting the processing chamber 112 to the vacuum pump 122, and A pump exhaust pipe 126 extending downstream.

該真空泵122通過將該處理腔室112連接到該真空泵122的該腔室排氣管124在該處理腔室112的側部形成負壓，以排出該處理腔室112的該殘留氣體，並且由於該真空泵122包括在半導體製造設備領域中常用的真空泵的配置，將省略該真空泵的詳細描述。 The vacuum pump 122 forms a negative pressure at the side of the processing chamber 112 by connecting the processing chamber 112 to the chamber exhaust pipe 124 of the vacuum pump 122 to discharge the residual gas of the processing chamber 112, and due to The vacuum pump 122 includes a configuration of a vacuum pump commonly used in the field of semiconductor manufacturing equipment, and a detailed description of the vacuum pump will be omitted.

該腔室排氣管124將該處理腔室112的排氣端口連接到該處理腔室112與該真空泵122之間的該真空泵122的入口。該處理腔室112的該殘餘氣體作為廢氣通過該真空泵122產生的該負壓通過該腔室排出排氣管124排出。 The chamber exhaust pipe 124 connects the exhaust port of the processing chamber 112 to the inlet of the vacuum pump 122 between the processing chamber 112 and the vacuum pump 122 . The residual gas in the processing chamber 112 is exhausted through the chamber exhaust pipe 124 through the negative pressure generated by the vacuum pump 122 as waste gas.

該泵排氣管126從該真空泵122向下游延伸，該泵排氣管126與該真空泵122的排出端口連接，使得從該真空泵122排出的該廢氣流動。 The pump exhaust pipe 126 extends downstream from the vacuum pump 122 , and the pump exhaust pipe 126 is connected to the discharge port of the vacuum pump 122 so that the exhaust gas discharged from the vacuum pump 122 flows.

該廢氣處理設備130通過該廢氣設備120處理及淨化從該半導體製造設備110排出的該氣體，該廢氣處理設備130包括洗滌器140、電漿反應器150、氣體供應單元180及收集器190。該洗滌器140用於處理從該真空泵122排出的該廢氣，該電漿反應器150用於使用電漿處理從該處理腔室112排出的該廢氣，該氣體供應單元180用於向該電漿反應器150提供反應氣體，以及該收集器190用於收集從該電漿反應器150排出的該廢氣中含有的粉末。 The waste gas treatment equipment 130 processes and purifies the gas discharged from the semiconductor manufacturing equipment 110 through the waste gas equipment 120 , and the waste gas treatment equipment 130 includes a scrubber 140 , a plasma reactor 150 , a gas supply unit 180 and a collector 190 . The scrubber 140 is used to treat the exhaust gas discharged from the vacuum pump 122, the plasma reactor 150 is used to treat the exhaust gas discharged from the processing chamber 112 with plasma, and the gas supply unit 180 is used to supply the plasma The reactor 150 provides reaction gas, and the collector 190 is used to collect powder contained in the exhaust gas discharged from the plasma reactor 150 .

該洗滌器140連接在該泵排氣管126的下游端，以處理從該真空泵122排出的該廢氣。該洗滌器140包括半導體製造設備技術領域中常用來處理該廢氣的所有類型的洗滌器。 The scrubber 140 is connected to the downstream end of the pump exhaust pipe 126 to treat the exhaust gas discharged from the vacuum pump 122 . The scrubber 140 includes all types of scrubbers commonly used in the technical field of semiconductor manufacturing equipment to treat the exhaust gas.

該電漿反應器150安裝在該腔室排氣管124上，以利用電漿分解及處理從該處理腔室112排出的該廢氣。在第2圖至第4圖中，該電漿反應器150以立體圖、縱向剖面圖及多個平面圖示出。該電漿反應器150包括反應腔室160、鐵氧體磁芯170、第一氣體注入噴嘴180b及第二氣體注入噴嘴180a。該鐵氧體磁芯170圍繞反應腔室160設置，該第一氣體注入噴嘴180b及該第二氣體注入噴嘴180a用於將反應氣體注入該反應腔室160。在本實施例中，該電漿反應器150是電感耦合電漿反應器，該電感耦合電漿反應器通過使用電感耦合電漿來處理沿著該腔室排氣管(第1圖中的124)流動的該廢氣。儘管未示出，該電漿反應器150通過由電源(未示出)供應適合於纏繞在該鐵氧體磁芯170周圍的天線線圈的交流電(AC)來運作。 The plasma reactor 150 is installed on the chamber exhaust pipe 124 to use plasma to decompose and treat the exhaust gas discharged from the processing chamber 112 . In FIGS. 2 to 4 , the plasma reactor 150 is shown in perspective view, longitudinal section view and multiple plan views. The plasma reactor 150 includes a reaction chamber 160, a ferrite core 170, a first gas injection nozzle 180b and a second gas injection nozzle 180a. The ferrite core 170 is disposed around the reaction chamber 160 , and the first gas injection nozzle 180 b and the second gas injection nozzle 180 a are used to inject reaction gas into the reaction chamber 160 . In this embodiment, the plasma reactor 150 is an inductively coupled plasma reactor that treats the ) of the exhaust gas flowing. Although not shown, the plasma reactor 150 operates by supplying an alternating current (AC) suitable for an antenna coil wound around the ferrite core 170 from a power source (not shown).

該反應腔室160是大致呈環形的腔室，並且該反應腔室160包括電漿反應空間163、氣體入口通道164a及氣體排出通道164b，待處理的氣體在該電漿反應空間163中發生電漿反應、該氣體入口通道164a與該電漿反應空間163連通，而流入該反應空間163的廢氣流動通過該氣體排出通道164b，以及與電漿反應空間163連通，而從該電漿反應空間163排出的該廢氣流動通過該氣體入口通道164a。 The reaction chamber 160 is a substantially annular chamber, and the reaction chamber 160 includes a plasma reaction space 163, a gas inlet channel 164a and a gas discharge channel 164b, and the gas to be treated generates electricity in the plasma reaction space 163. Plasma reaction, the gas inlet channel 164a communicates with the plasma reaction space 163, and the exhaust gas flowing into the reaction space 163 flows through the gas discharge channel 164b, and communicates with the plasma reaction space 163, and from the plasma reaction space 163 The exhaust gas discharged flows through the gas inlet passage 164a.

該反應腔室160包括腔室主體161、氣體入口導管部分162a、氣體排放管部分162b，電漿反應空間163形成在該腔室主體161中、該氣體入口導管部分162a延伸自該腔室主體161並且該氣體入口通道164a形成在該氣體入口導管部分162a中，以及該氣體排放管部分162b延伸自該腔室主體160並且該氣體排放通道164b形成在該腔室主體161中。 The reaction chamber 160 includes a chamber body 161, a gas inlet conduit portion 162a, a gas discharge pipe portion 162b, a plasma reaction space 163 is formed in the chamber body 161, and the gas inlet conduit portion 162a extends from the chamber body 161 And the gas inlet passage 164a is formed in the gas inlet conduit part 162a, and the gas discharge pipe part 162b extends from the chamber main body 160 and the gas discharge passage 164b is formed in the chamber main body 161 .

該腔室主體161形成該電漿反應空間163，該待處理氣體在該電漿反應空間163中發生電漿反應。儘管未示出，用於初始電漿點火的點火器安裝在該腔室主體161中，該腔室主體161包括第一基部161a、第二基部161b、第一連接導管部分166及第二連接導管部分169，該第二基部161b與第一基部161a相互間隔，該第一連接導管部分166及該第二連接導管部分169用於連接該第一基部161a及該第二基部161b。 The chamber main body 161 forms the plasma reaction space 163 , and the gas to be treated undergoes a plasma reaction in the plasma reaction space 163 . Although not shown, an igniter for initial plasma ignition is installed in the chamber main body 161, which includes a first base 161a, a second base 161b, a first connecting conduit portion 166, and a second connecting conduit. The portion 169, the second base portion 161b and the first base portion 161a are spaced apart from each other, the first connecting conduit portion 166 and the second connecting conduit portion 169 are used to connect the first base portion 161a and the second base portion 161b.

該第一基部161a內設有第一內部空間1611a，並且該第一基部161a具有一氣體入口1612a，該第一內部空間1611a通過該氣體入口1612a與該氣體入口通道164a連通。該第一基部161a位於該第二基部161b的上方，並且該氣體入口導管部分162a與該第一基部161a的上部分連接，該第一連接導管部分166及該第二連接導管部分169連接到該第一基部161a的兩個下側。 The first base portion 161a is provided with a first inner space 1611a, and the first base portion 161a has a gas inlet 1612a, and the first inner space 1611a communicates with the gas inlet channel 164a through the gas inlet 1612a. The first base 161a is located above the second base 161b, and the gas inlet conduit portion 162a is connected to the upper portion of the first base 161a, the first connection conduit portion 166 and the second connection conduit portion 169 are connected to the first base portion 161a. Both lower sides of the first base 161a.

該第二基部161b內設有第二內部空間1611b，並且該第二基部161b具有氣體出口1612b，該第二內部空間1611b通過該氣體出口1612b與該氣體 排出通道164b連通。該第二基部161b位於該第一基部161a的下方，並且該氣體排放導管部分162b與該第二基部161b的下部連接。該第一連接導管部分166及該第二連接導管部分169連接到該第二基部161b的兩個上側。 The second base 161b is provided with a second inner space 1611b, and the second base 161b has a gas outlet 1612b, and the second inner space 1611b communicates with the gas through the gas outlet 1612b. The discharge passage 164b communicates. The second base 161b is located below the first base 161a, and the gas discharge conduit portion 162b is connected to the lower portion of the second base 161b. The first connection duct part 166 and the second connection duct part 169 are connected to both upper sides of the second base part 161b.

該第一連接導管部分166及該第二連接導管部分169平行佈置，以使位於該第二基部161b上方的該第一基部161a連接位於該第一基部161a下方的該第二基部161b。該第一連接導管部分166在該第一基部161a與該第二基部161b之間垂直延伸，第一連接通道165形成在該第一連接導管部分166的內部，形成在該第一基部161a內部的該第一內部空間1611a及形成在該第二基部161b內部的該第二內部空間1611b通過該第一連接通道165彼此連通。該第二連接導管部分169在該第一基部161a與該第二基部161b之間沿著豎直方向延伸。該第二連接導管部分169的內部形成有第二連接通道167。該第一基部161a的內部形成的該第一內部空間1611a與該第二基部161b的內部形成的該第二內部空間1611b通過該第二連接通道167彼此連通，該第一連接導管部分166及第二連接導管部分169設置為彼此間隔開，使得該第一連接導管部分166與該第二連接導管部分169之間形成凹槽169a。 The first connecting conduit portion 166 and the second connecting conduit portion 169 are arranged in parallel, so that the first base portion 161a above the second base portion 161b is connected to the second base portion 161b below the first base portion 161a. The first connecting conduit portion 166 extends vertically between the first base portion 161a and the second base portion 161b, the first connecting channel 165 is formed inside the first connecting conduit portion 166, and the first connecting conduit portion 165 is formed inside the first base portion 161a. The first internal space 1611 a and the second internal space 1611 b formed inside the second base portion 161 b communicate with each other through the first connection channel 165 . The second connection conduit portion 169 extends in a vertical direction between the first base portion 161a and the second base portion 161b. A second connection channel 167 is formed inside the second connection conduit portion 169 . The first internal space 1611a formed inside the first base portion 161a and the second internal space 1611b formed inside the second base portion 161b communicate with each other through the second connecting passage 167, the first connecting conduit portion 166 and the second connecting conduit portion 166 The two connecting conduit portions 169 are arranged to be spaced apart from each other such that a groove 169 a is formed between the first connecting conduit portion 166 and the second connecting conduit portion 169 .

該第一內部空間1611a、該第二內部空間1611b、該第一連接通道165及該第二連接通道167在該腔室主體161中彼此連接，形成電漿反應空間163。即在本實施例中，該電漿反應空間163形成在分別垂直設置的該氣體入口通道164a與該氣體排出通道164b之間，使得該第一連接通道165與該第二連接通道167彼此分離並且平行設置，該第一連接通道165的該上游端及該第二連接通道167的該上游端通過該第一內部空間1611a彼此連通，並且該第一連接通道165的該下游端及該第二連接通道167的該下游端通過該第二內部空間1611b彼此連通。如第3圖的一虛線所示，在電漿反應空間163中沿著環形放電迴路R產生電漿。本發明不限於該多個圖式中所示的該腔室主體161的該結構，該腔室主體161 可以是任何能夠在其內部形成環形電漿反應空間163的結構，這也涵蓋在本發明的範圍內。該腔室主體161較佳地以將形成在該腔室主體161內部的該環狀電漿反應空間163豎立的方式設置。通過該氣體入口1612a引入該電漿反應空間163的該廢氣分流並分別流經該第一連接通道165及該第二連接通道167，然後通過該氣體出口1612b從電漿反應空間163排放。 The first internal space 1611 a , the second internal space 1611 b , the first connecting channel 165 and the second connecting channel 167 are connected to each other in the chamber body 161 to form a plasma reaction space 163 . That is, in the present embodiment, the plasma reaction space 163 is formed between the gas inlet channel 164a and the gas outlet channel 164b respectively arranged vertically, so that the first connecting channel 165 and the second connecting channel 167 are separated from each other and Arranged in parallel, the upstream end of the first connecting passage 165 and the upstream end of the second connecting passage 167 communicate with each other through the first internal space 1611a, and the downstream end of the first connecting passage 165 and the second connecting passage The downstream ends of the channels 167 communicate with each other through the second internal space 1611b. As shown by a dotted line in FIG. 3 , plasma is generated along the annular discharge circuit R in the plasma reaction space 163 . The present invention is not limited to the structure of the chamber body 161 shown in the drawings, the chamber body 161 It can be any structure capable of forming the annular plasma reaction space 163 inside, which is also covered within the scope of the present invention. The chamber body 161 is preferably arranged in a manner to erect the annular plasma reaction space 163 formed inside the chamber body 161 . The waste gas introduced into the plasma reaction space 163 through the gas inlet 1612a splits and flows through the first connecting channel 165 and the second connecting channel 167 respectively, and then is discharged from the plasma reaction space 163 through the gas outlet 1612b.

該氣體入口導管部分162a形成為從該第一基部161a的該上部分向上延伸。氣體入口通道164a形成在該氣體入口導管部分162a中，並且沿著該垂直方向延伸。該氣體入口通道164a通過該氣體入口1612a與該第一內部空間1611a連通。該氣體入口通道164a的中心軸線X作為該氣體入口導管部分162a的該中心軸線通過該第一連接通道165與該第二連接通道167之間。第一氣體噴嘴180b及第二氣體噴嘴180a安裝在該氣體入口導管部分162a中，從該第一氣體注入噴嘴180b及該第二氣體注入噴嘴180a注入的廢氣及氧氣通過該氣體入口通道164a被引入該電漿反應空間163。 The gas inlet conduit portion 162a is formed to extend upward from the upper portion of the first base portion 161a. A gas inlet passage 164a is formed in the gas inlet duct portion 162a, and extends along the vertical direction. The gas inlet channel 164a communicates with the first inner space 1611a through the gas inlet 1612a. The central axis X of the gas inlet channel 164 a passes between the first connecting channel 165 and the second connecting channel 167 as the central axis of the gas inlet conduit portion 162 a. First gas nozzle 180b and second gas nozzle 180a are installed in the gas inlet duct portion 162a, and exhaust gas and oxygen injected from the first gas injection nozzle 180b and the second gas injection nozzle 180a are introduced through the gas inlet passage 164a. The plasma reaction space 163 .

該氣體排放導管部分162b形成為從該第二基部161b的該下部向下延伸，氣體排放通道164b形成在該氣體排放管部分162b的內部，並且沿著該垂直方向延伸。該氣體排出通道164b通過該氣體出口1612b與該第二內部空間1611b連通。該電漿反應空間163的該氣體通過該氣體排放通道164b排放到外部。該氣體排放管部分162b設置在與該氣體入口導管部分162a相同的軸線上。通過該氣體排放通道164b從電漿反應器150排放的該廢氣被引入該收集器190。 The gas discharge duct portion 162b is formed to extend downward from the lower portion of the second base portion 161b, and a gas discharge passage 164b is formed inside the gas discharge pipe portion 162b and extends along the vertical direction. The gas discharge channel 164b communicates with the second internal space 1611b through the gas outlet 1612b. The gas in the plasma reaction space 163 is discharged to the outside through the gas discharge channel 164b. The gas discharge pipe portion 162b is arranged on the same axis as the gas inlet conduit portion 162a. The exhaust gas discharged from the plasma reactor 150 through the gas discharge channel 164b is introduced into the collector 190 .

該鐵氧體磁芯170設置為圍繞該反應腔室160，該鐵氧體磁芯170包括邊緣壁部171及分隔壁部175，該分隔壁部175位於該邊緣壁部171內部，該鐵氧體磁芯170設置為圍繞形成在反應腔室160中的該電漿反應空間163的一部分，該邊緣壁部171沿著該圓周方向延伸，以形成一實質上矩形的形狀。該第一連接導管部分166及該第二連接導管部分169穿過該邊緣壁部171的該內部區 域。該分隔壁部175從該邊緣壁部171的該內部區域以一直線延伸，以連接兩個相對的壁部。該邊緣壁部171穿過形成在該兩個連接導管部分166及169之間的該凹槽169a。因此，該第一連接導管部分166及該第二連接導管部分169中的每一個在該圓周方向上被該鐵氧體磁心170包圍。儘管未示出，天線線圈圍繞該鐵氧體磁芯170纏繞，並且向天線線圈供應合適的交流電(AC)電力。 The ferrite core 170 is arranged to surround the reaction chamber 160, the ferrite core 170 includes an edge wall portion 171 and a partition wall portion 175, the partition wall portion 175 is located inside the edge wall portion 171, and the ferrite core 170 The body magnetic core 170 is disposed to surround a part of the plasma reaction space 163 formed in the reaction chamber 160, and the edge wall portion 171 extends along the circumferential direction to form a substantially rectangular shape. The first connecting conduit portion 166 and the second connecting conduit portion 169 pass through the inner region of the edge wall portion 171 area. The partition wall portion 175 extends in a straight line from the inner area of the edge wall portion 171 to connect two opposite wall portions. The edge wall portion 171 passes through the groove 169a formed between the two connecting duct portions 166 and 169 . Accordingly, each of the first connection conduit portion 166 and the second connection conduit portion 169 is surrounded by the ferrite core 170 in the circumferential direction. Although not shown, an antenna coil is wound around the ferrite core 170, and suitable alternating current (AC) power is supplied to the antenna coil.

該第一氣體注入噴嘴180b及該第二氣體注入噴嘴180a安裝在該氣體入口導管部分162a中，並且向形成在該反應腔室160的內部的該電漿反應空間163注入氧氣O2(該氧氣是從該氣體供應單元180供應的反應氣體)。為此，在該第一氣體注入噴嘴180b及該第二氣體注入噴嘴180a的每一個中形成氣體注入端口，氣體通過該氣體注入端口注入。通過該第一氣體注入噴嘴180b及該第二氣體注入噴嘴180a注入的氧氣增強了該電漿反應空間163中的該廢氣的該分解性能。該第一氣體注入噴嘴180b及該第二氣體注入噴嘴180a形成本發明的反應氣體注入單元。 The first gas injection nozzle 180b and the second gas injection nozzle 180a are installed in the gas inlet conduit portion 162a, and inject oxygen O2 (the oxygen gas) into the plasma reaction space 163 formed in the reaction chamber 160. is the reaction gas supplied from the gas supply unit 180). For this, a gas injection port through which gas is injected is formed in each of the first gas injection nozzle 180b and the second gas injection nozzle 180a. The oxygen injected through the first gas injection nozzle 180 b and the second gas injection nozzle 180 a enhances the decomposition performance of the exhaust gas in the plasma reaction space 163 . The first gas injection nozzle 180b and the second gas injection nozzle 180a form the reactive gas injection unit of the present invention.

該第一氣體注入噴嘴180b設置在該氣體入口導管部分162a的該周向上的該第二連接導管部分169的該側部，將從該氣體供給部180供應的該氧氣向該第一連接通道165注入。因此，從該第一氣體注入噴嘴180b注入的該氧氣從該氣體入口通道164a中的該第二連接通道167的該上部分朝向該第一連接通道165沿著傾斜向下的方向流動，並且該氣體通過氣體入口1612a然後流入該第一連接通道165，如該點虛線的箭頭所示。 The first gas injection nozzle 180b is provided at the side of the second connection conduit portion 169 in the circumferential direction of the gas inlet conduit portion 162a, and supplies the oxygen supplied from the gas supply part 180 to the first connection passage 165. injection. Therefore, the oxygen injected from the first gas injection nozzle 180b flows in an obliquely downward direction toward the first connection passage 165 from the upper portion of the second connection passage 167 in the gas inlet passage 164a, and the The gas passes through the gas inlet 1612a and then flows into the first connecting channel 165, as shown by the dotted arrow.

該第二氣體注入噴嘴180a設置在該氣體入口導管部分162a的該圓周方向上的該第一連接導管部分166的該側部，將從該氣體供應單元180供給的該氧氣向該第二連接通道167注入。因此，從該第二氣體注入噴嘴180a注入的該氧氣從該氣體入口通道164a中的該第一連接通道165的該上部分朝向該第二連 接通道167以向下傾斜的方向流動，並通過該氣體入口1612a流入該第二連接通道167，如點虛線的箭頭所示。 The second gas injection nozzle 180a is disposed on the side of the first connection conduit portion 166 in the circumferential direction of the gas inlet conduit portion 162a, and supplies the oxygen supplied from the gas supply unit 180 to the second connection passage. 167 injections. Therefore, the oxygen injected from the second gas injection nozzle 180a is directed from the upper portion of the first connecting passage 165 in the gas inlet passage 164a toward the second connecting passage. The connecting channel 167 flows in a downwardly inclined direction, and flows into the second connecting channel 167 through the gas inlet 1612a, as shown by the dotted arrow.

該氣體供應單元180儲存該氧氣作為通過該第一氣體噴嘴180b及該第二氣體噴嘴180a注入的反應氣體，並且通過該氣體供應管185將該氧氣供應到該第一氣體噴嘴180b及該第二氣體噴嘴180a。 The gas supply unit 180 stores the oxygen as the reaction gas injected through the first gas nozzle 180b and the second gas nozzle 180a, and supplies the oxygen to the first gas nozzle 180b and the second gas nozzle 180b through the gas supply pipe 185. Gas nozzle 180a.

該收集器190收集從該電漿反應器150排出的該廢氣中含有的粉末，該收集器190包括半導體製造設備領域中常用的所有類型的收集器，以收集廢氣中含有的粉末。該收集器190設置在該腔室排氣管124上的該電漿反應器150的下方，以收集通過該反應腔室160的該氣體排放管部分162b排放的該廢氣中含有的粉末。 The collector 190 collects the powder contained in the exhaust gas discharged from the plasma reactor 150, and the collector 190 includes all types of collectors commonly used in the field of semiconductor manufacturing equipment to collect the powder contained in the exhaust gas. The collector 190 is disposed below the plasma reactor 150 on the chamber exhaust pipe 124 to collect powder contained in the exhaust gas discharged through the gas discharge pipe portion 162 b of the reaction chamber 160 .

本發明的特有的配置在於該第一氣體噴嘴180b及該第二氣體噴嘴180a將作為反應性氣體的該氧氣注入到形成在該反應腔室160內的該電漿反應空間163。在下文中，將根據本發明的該特有的配置來描述該運作。 The unique configuration of the present invention is that the first gas nozzle 180 b and the second gas nozzle 180 a inject the oxygen as a reactive gas into the plasma reaction space 163 formed in the reaction chamber 160 . Hereinafter, the operation will be described according to this unique configuration of the present invention.

當將該氧氣簡單地注入該管道時，如第5圖所示，在與該注入端口相對的該導管的該內壁面上產生並生長的多個固體。本發明的發明人分析了被注入該導管內的該氧氣的流動，以確定產生這種固體的原因，結果如第6圖~第8圖所示，在與氧氣注入端口相對的該導管的該內壁面產生富氧區域，形成容易局部產生粉末的環境。此外，本發明的發明人發現當將該氧氣簡單地注入該導管中時，在與該注入端口相對的該導管的該內壁表面上產生並生長的多個固體是在該半導體製造過程中用於形成氧化鋯薄膜的前驅物的鋯源氣體組分(例如：CpZr(NMe2)3)與氧氣反應以生成氧化鋯(ZrO2)時由不完全反應所形成的具有高的氮含量的多個不完全反應產物，而該不完全反應的原因在於在低於熱解溫度(200~250℃)的溫度下反應沒有發生完全氧化。在本發明中，氧氣被注入到該電漿反應空間163中，並且該鋯源氣體組分及氧氣在該高溫的電漿反應空間 163中反應以生成氧化鋯。由於該鋯源氣體組分在該高溫的電漿反應空間163內進行熱分解，與氧氣的反應性增強，從而解決了由於不完全反應所導致的生長多個固體的問題。下面的反應方程式表示在該電漿反應空間163中的該鋯源氣體組分的該分解及置換反應。 When the oxygen is simply injected into the conduit, as shown in FIG. 5, solids are generated and grown on the inner wall of the conduit opposite the injection port. The inventor of the present invention analyzed the flow of the oxygen injected into the conduit to determine the cause of the solid. As a result, as shown in Figures 6 to 8, in the conduit opposite to the oxygen injection port Oxygen-enriched areas are generated on the inner wall surface, forming an environment where powder is easily generated locally. In addition, the inventors of the present invention found that when the oxygen gas was simply injected into the conduit, solids generated and grown on the inner wall surface of the conduit opposite to the injection port were used in the semiconductor manufacturing process. Polymer with a high nitrogen content formed by an incomplete reaction when the zirconium source gas component of the precursor for forming a zirconia film (eg: CpZr(NMe 2 ) 3 ) reacts with oxygen to produce zirconia (ZrO 2 ). An incomplete reaction product, and the reason for the incomplete reaction is that the reaction did not completely oxidize at a temperature lower than the pyrolysis temperature (200~250°C). In the present invention, oxygen is injected into the plasma reaction space 163, and the zirconium source gas components and oxygen react in the high temperature plasma reaction space 163 to generate zirconia. Since the zirconium source gas components are thermally decomposed in the high-temperature plasma reaction space 163 , the reactivity with oxygen is enhanced, thereby solving the problem of growing multiple solids caused by incomplete reactions. The following reaction equations represent the decomposition and replacement reactions of the zirconium source gas components in the plasma reaction space 163 .

[反應式]鋯源(CpZr(NMe2)3)+電漿+O2 → ZrO2(S)+NO(g)/NO2(g)+CO(g)/CO2(g)+H2O(g)+CxHy(g) [Reaction Formula] Zirconium source (CpZr(NMe 2 ) 3 )+plasma+O 2 → ZrO 2 (S)+NO(g)/NO 2 (g)+CO(g)/CO 2 (g)+H 2 O(g)+C x H y (g)

在該電漿反應空間163中產生的氧化鋯(ZrO2)呈現高純度且穩定的細小的粉末形式，並且被收集在設置在電漿反應器150下方的收集器190中。 Zirconia (ZrO 2 ) generated in the plasma reaction space 163 is in a high-purity and stable fine powder form, and is collected in a collector 190 provided below the plasma reactor 150 .

第9圖及第10圖以縱向剖面圖及平面圖的形式示出了根據本發明的另一實施例的電漿反應器。請參照第9圖及第10圖，該電漿反應器250包括反應腔室160、圍繞該反應腔室160設置的鐵氧體磁芯170、以及用於將反應氣體注入該反應腔室160的第一氣體噴嘴280b及第二氣體噴嘴280a。除了該第一氣體注入噴嘴280b及該第二氣體注入噴嘴280a的該配置之外，該電漿反應器250的其餘配置與第2圖至第4圖所示的該電漿反應器150相同，並因此省略其詳細說明，僅詳細說明該第一氣體噴嘴280b及該第二氣體噴嘴280a的配置及運作。 Figures 9 and 10 show a plasma reactor according to another embodiment of the present invention in longitudinal section and plan view. Please refer to Figures 9 and 10, the plasma reactor 250 includes a reaction chamber 160, a ferrite core 170 surrounding the reaction chamber 160, and a device for injecting reaction gas into the reaction chamber 160. The first gas nozzle 280b and the second gas nozzle 280a. Except for the configuration of the first gas injection nozzle 280b and the second gas injection nozzle 280a, the remaining configuration of the plasma reactor 250 is the same as that of the plasma reactor 150 shown in FIGS. 2 to 4, Therefore, the detailed description thereof is omitted, and only the configuration and operation of the first gas nozzle 280b and the second gas nozzle 280a are described in detail.

該第一氣體注入噴嘴280b及該第二氣體注入噴嘴280a安裝在氣體入口導管部分162a中，使得例如氧氣(O2)的反應性氣體被引入到形成在該氣體入口導管部分162a內的該氣體入口通道164a中，通過該第一氣體注入噴嘴280b及該第二氣體注入噴嘴280a的該反應氣體與待處理的廢氣一起通過該氣體入口通道164a引入該電漿反應空間163中，使得該廢氣的分解性能在該電漿反應空間163被增強。該第一氣體噴嘴280b及該第二氣體噴嘴280a形成根據本發明的一對氣體噴嘴。因此，根據本發明，形成在該第一氣體注入噴嘴280b中的第一氣體注入端口及形成在該第二氣體注入噴嘴280a中的第二氣體注入端口形成一對氣 體注入端口。在本實施例中，該第一氣體噴嘴280b及該第二氣體噴嘴280a位於相對於該氣體入口通道164a的該中心軸線X彼此對稱的一點上，並且彼此相對設置在該氣體入口導管部分162a的外周。 The first gas injection nozzle 280b and the second gas injection nozzle 280a are installed in the gas inlet conduit portion 162a such that a reactive gas such as oxygen (O 2 ) is introduced into the gas formed in the gas inlet conduit portion 162a. In the inlet channel 164a, the reaction gas through the first gas injection nozzle 280b and the second gas injection nozzle 280a is introduced into the plasma reaction space 163 together with the exhaust gas to be treated through the gas inlet channel 164a, so that the exhaust gas Decomposition performance is enhanced in the plasma reaction space 163 . The first gas nozzle 280b and the second gas nozzle 280a form a pair of gas nozzles according to the present invention. Therefore, according to the present invention, the first gas injection port formed in the first gas injection nozzle 280b and the second gas injection port formed in the second gas injection nozzle 280a form a pair of gas injection ports. In this embodiment, the first gas nozzle 280b and the second gas nozzle 280a are located at a point symmetrical to each other with respect to the central axis X of the gas inlet passage 164a, and are disposed opposite to each other on the gas inlet conduit portion 162a. peripheral.

該第一氣體注入噴嘴280b安裝在該氣體入口導管部分162a中，以將例如氧氣的反應氣體朝向該氣體入口通道164a的中心注入，如箭頭所示。該第一氣體噴嘴280b的該氣體注入方向朝向與該第一氣體噴嘴280b相對的該第二氣體噴嘴280a。 The first gas injection nozzle 280b is installed in the gas inlet conduit portion 162a to inject a reactive gas such as oxygen toward the center of the gas inlet channel 164a, as indicated by an arrow. The gas injection direction of the first gas nozzle 280b faces the second gas nozzle 280a opposite to the first gas nozzle 280b.

該第二氣體注入噴嘴280a安裝在該氣體入口導管部分162a中，以將例如氧氣的反應氣體朝著該氣體入口通道164a的該中心注入，如箭頭所示。該第二氣體噴嘴280a的氣該體注入方向朝向與該第二氣體噴嘴280a相對的該第一氣體噴嘴280b。 The second gas injection nozzle 280a is installed in the gas inlet conduit portion 162a to inject a reaction gas such as oxygen toward the center of the gas inlet channel 164a, as indicated by an arrow. The gas injection direction of the second gas nozzle 280a faces the first gas nozzle 280b opposite to the second gas nozzle 280a.

從該第一氣體注入噴嘴280b注入的該氧氣及從該第二氣體注入噴嘴280a注入的該氧氣在該氣體入口通道164a的該中心碰撞。因此，與該氣體入口導管部分162a的該內壁表面直接接觸的該氧氣被最小化，以防止多個固體的產生。 The oxygen injected from the first gas injection nozzle 280b and the oxygen injected from the second gas injection nozzle 280a collide at the center of the gas inlet channel 164a. Therefore, the oxygen in direct contact with the inner wall surface of the gas inlet conduit portion 162a is minimized to prevent generation of solids.

在本實施例中，描述了該第一氣體注入噴嘴280b朝著該第二注入噴嘴280a注入氧氣，並且該第二注入噴嘴280a朝著該第一氣體注入噴嘴280b注入該氧氣。或者，將兩個氣體噴嘴280b及280a佈置成各種形狀，使得該第一氣體噴嘴280b的該氣體注入方向及該第二氣體噴嘴280a的該氣體注入方向相交，從而獲得相同的效果，這也涵蓋在本發明的範圍內。 In this embodiment, it is described that the first gas injection nozzle 280b injects oxygen toward the second injection nozzle 280a, and the second injection nozzle 280a injects the oxygen toward the first gas injection nozzle 280b. Alternatively, the two gas nozzles 280b and 280a are arranged in various shapes so that the gas injection direction of the first gas nozzle 280b and the gas injection direction of the second gas nozzle 280a intersect to obtain the same effect, which also covers within the scope of the present invention.

在本實施例中，以一對注氣嘴為例進行說明，但除此之外，也可以有兩對或多對如此排列的氣體注入噴嘴，這也涵蓋在本發明的範圍內。 In this embodiment, a pair of gas injection nozzles is taken as an example for illustration, but in addition, there may be two or more pairs of gas injection nozzles arranged in this way, which is also within the scope of the present invention.

第11圖是根據本發明另一實施例的電漿反應器的平面圖，請參照第11圖，電漿反應器350包括反應腔室160、圍繞該反應腔室160設置的鐵氧體磁 芯170、以及用於將反應氣體注入該反應腔室160的該內部的氣體注入單元。除了該氣體注入單元之外，該電漿反應器350的其餘配置與第9圖至第10圖所示的該電漿反應器250相同，並因此省略其詳細說明，僅詳細說明該氣體注入部的該配置及運作。 Fig. 11 is a plan view of a plasma reactor according to another embodiment of the present invention, please refer to Fig. 11, a plasma reactor 350 includes a reaction chamber 160, a ferrite magnet set around the reaction chamber 160 core 170 , and a gas injection unit for injecting reaction gas into the interior of the reaction chamber 160 . Except for the gas injection unit, the rest of the configuration of the plasma reactor 350 is the same as that of the plasma reactor 250 shown in FIGS. of the configuration and operation.

在第11圖所示的該實施例中，該氣體注入單元包括從該外部圍繞該氣體入口導管部分162a的環形氣流管390，以及形成在該氣體入口導管部分中的多個氣體注入端口380a、380b、381a、381b、382a及382b。 In the embodiment shown in FIG. 11, the gas injection unit includes an annular gas flow tube 390 surrounding the gas inlet conduit portion 162a from the outside, and a plurality of gas injection ports 380a formed in the gas inlet conduit portion, 380b, 381a, 381b, 382a and 382b.

該氣體流動導管390是從該外側以環狀形狀圍繞該氣體入口導管部分162a的導管，並且在該氣體流動導管390的內部形成有該反應氣體沿著該氣體入口導管部分162a的該圓周方向流動的通道。氣體供應導管395與該氣體流動導管390連接，該反應氣體通過該氣體供應導管395從外部供應到該氣體流動管390內，在該氣體流動管390中流動的該反應氣體過形成在該氣體入口導管部分162a中的該多個氣體注入端口380a、380b、381a、381b、382a及382b注入到該氣體入口通道164a。 The gas flow conduit 390 is a conduit that surrounds the gas inlet conduit portion 162a in a ring shape from the outside, and the reaction gas is formed inside the gas flow conduit 390 to flow along the circumferential direction of the gas inlet conduit portion 162a. channel. A gas supply conduit 395 is connected to the gas flow conduit 390, and the reaction gas is supplied from the outside to the gas flow pipe 390 through the gas supply conduit 395, and the reaction gas flowing in the gas flow pipe 390 is formed at the gas inlet. The plurality of gas injection ports 380a, 380b, 381a, 381b, 382a, and 382b in the conduit portion 162a inject into the gas inlet channel 164a.

該多個氣體注入端口380a、380b、381a、381b、382a及382b形成在該氣體入口導管部分162a中，該多個氣體注入端口380a、380b、381a、381b、382a、382b分別與該氣體流通管390連通。在本實施例中，說明多個氣體注入端口380a、380b、381a、381b、382a及382b沿著該氣體入口導管部分162a的該圓周方向以多個相等的間隔設置。通過該多個氣體注入端口380a、380b、381a、381b、382a及382b中的每一個將該氣體流動管390中流動的該反應氣體注入該氣體入口通道164a中，在該多個氣體注入端口380a、380b、381a、381b、382a及382b中，彼此相對設置的兩個氣體注入端口380a及380b形成一對第一氣體注入端口，而另外兩個彼此相對設置的氣體注入端口381a及381b形成一對第一氣體注入端口，並且另外兩個彼此相對設置的氣體注入端口382a、382b形成一對第三 氣體注入端口，每一對氣體注入端口注入氣體的該方向與第9圖及第10圖所示的一對氣體注入噴嘴的該方向相同。 The plurality of gas injection ports 380a, 380b, 381a, 381b, 382a, and 382b are formed in the gas inlet conduit portion 162a, and the plurality of gas injection ports 380a, 380b, 381a, 381b, 382a, 382b are connected to the gas flow pipe respectively. 390 connected. In this embodiment, a plurality of gas injection ports 380a, 380b, 381a, 381b, 382a, and 382b are described to be arranged at equal intervals along the circumferential direction of the gas inlet conduit portion 162a. The reaction gas flowing in the gas flow tube 390 is injected into the gas inlet channel 164a through each of the plurality of gas injection ports 380a, 380b, 381a, 381b, 382a, and 382b, at the plurality of gas injection ports 380a , 380b, 381a, 381b, 382a, and 382b, the two gas injection ports 380a and 380b disposed opposite to each other form a pair of first gas injection ports, while the other two gas injection ports 381a and 381b disposed opposite to each other form a pair of gas injection ports. The first gas injection port, and the other two gas injection ports 382a, 382b disposed opposite to each other form a pair of third gas injection ports. Gas injection ports, the direction of gas injection for each pair of gas injection ports is the same as that of the pair of gas injection nozzles shown in Fig. 9 and Fig. 10 .

在本實施例中描述了三對氣體注入端口，但除此之外，多個氣體注入端口對的數目也可以是兩對或更少，也可以是四對或更多，這也涵蓋在本發明的範圍內。 In this embodiment, three pairs of gas injection ports are described, but in addition, the number of multiple gas injection port pairs can also be two pairs or less, and it can also be four pairs or more, which is also covered in this document. within the scope of the invention.

儘管已經通過上述實施例對本發明進行描述，但本發明不限於此。在不脫離本發明的精神及範圍的情況下，上述多個實施例可以有各種修改及變化，本發明所屬領域之通常知識者可以理解該多個修改及變化同樣屬於本發明。 Although the present invention has been described through the above-mentioned embodiments, the present invention is not limited thereto. Without departing from the spirit and scope of the present invention, various modifications and changes can be made to the above-mentioned embodiments, and those skilled in the art of the present invention can understand that the multiple modifications and changes also belong to the present invention.

100:半導體製造設施 100: Semiconductor manufacturing facilities

110:半導體製造設備 110:Semiconductor manufacturing equipment

112:處理腔室 112: processing chamber

120:排氣設備 120: exhaust equipment

122:真空泵 122: vacuum pump

124:腔室排氣管 124: Chamber exhaust pipe

126:泵排氣管 126: Pump exhaust pipe

130:廢氣處理設備 130: Exhaust gas treatment equipment

140:洗滌器 140: scrubber

150:電漿反應器 150: Plasma Reactor

180:氣體供應單元 180: gas supply unit

185:氣體供應管 185: gas supply pipe

190:收集器 190: collector

Claims (14)

一種用於半導體製造設施的廢氣處理設備，該廢氣處理設備包括：一反應腔室，被配置為通過使用一電感耦合電漿反應來處理一廢氣；及一反應氣體注入單元，被配置為注入一反應氣體，其中該反應腔室包括一腔室主體，該腔室主體提供一電漿反應空間，在該電漿反應空間中發生該電感耦合電漿反應，該腔室主體具有與該電漿反應空間連通的一氣體入口及一氣體出口，及該廢氣通過該氣體入口引入該電漿反應空間內，並且該廢氣通過該氣體出口從該電漿反應空間排出，該反應氣體注入單元在該電漿反應空間的一上游側外側通過該氣體入口向該電漿反應空間注入該反應氣體，其中與該氣體入口連通的一第一連接通道及一第二連接通道形成在該電漿反應空間中，通過該氣體入口引入該電漿反應空間的該廢氣分流並分別流經該第一連接通道及該第二連接通道，及該反應氣體注入單元包括鄰近於該第一連接通道之一第一氣體注入端口以及鄰近於該第二連接通道之一第二氣體注入端口，該反應氣體通過該第一氣體注入端口被導向該第二連接通道，該反應氣體通過第二氣體注入端口被導向該第一連接通道。 An exhaust gas treatment apparatus for a semiconductor manufacturing facility, the exhaust gas treatment apparatus including: a reaction chamber configured to treat an exhaust gas by using an inductively coupled plasma reaction; and a reaction gas injection unit configured to inject a Reactive gas, wherein the reaction chamber includes a chamber body, the chamber body provides a plasma reaction space, the inductively coupled plasma reaction occurs in the plasma reaction space, the chamber body has a A gas inlet and a gas outlet connected in space, and the waste gas is introduced into the plasma reaction space through the gas inlet, and the waste gas is discharged from the plasma reaction space through the gas outlet, and the reaction gas injection unit is in the plasma reaction space An upstream side of the reaction space injects the reaction gas into the plasma reaction space through the gas inlet, wherein a first connection channel and a second connection channel communicated with the gas inlet are formed in the plasma reaction space, through The waste gas introduced into the plasma reaction space by the gas inlet is split and flows through the first connection channel and the second connection channel respectively, and the reaction gas injection unit includes a first gas injection port adjacent to the first connection channel and a second gas injection port adjacent to the second connection channel, the reaction gas is directed to the second connection channel through the first gas injection port, the reaction gas is directed to the first connection channel through the second gas injection port . 如請求項1所述的廢氣處理設備，其中該第一氣體注入端口及該第二氣體注入端口位於從該腔室主體向一外側延伸的一氣體入口導管部分中，及通過該氣體入口與該電漿反應空間連通的一氣體入口通道形成在 該氣體入口導管部分的內側。 The exhaust gas treatment device according to claim 1, wherein the first gas injection port and the second gas injection port are located in a gas inlet conduit portion extending from the chamber body to an outside, and pass through the gas inlet and the A gas inlet channel communicating with the plasma reaction space is formed in The inside of the gas inlet conduit section. 如請求項2所述的廢氣處理設備，其中該第一連接通道及該第二連接通道位於該氣體入口的兩側，而該氣體入口位於該第一連接通道及該第二連接通道之間，及該反應氣體以傾斜於該氣體入口通道的一中心軸線地注入，以從該第二連接通道通過該第一氣體注入端口流向該第一連接通道，及該反應氣體以傾斜於該氣體入口通道的該中心軸線地注入，以從該第一連接通道通過該第二氣體注入端口流向該第二連接通道。 The exhaust gas treatment equipment as claimed in item 2, wherein the first connecting channel and the second connecting channel are located on both sides of the gas inlet, and the gas inlet is located between the first connecting channel and the second connecting channel, and the reaction gas is injected obliquely to a central axis of the gas inlet passage to flow from the second connection passage to the first connection passage through the first gas injection port, and the reaction gas is oblique to the gas inlet passage The central axis is injected to flow from the first connection channel to the second connection channel through the second gas injection port. 如請求項1所述的廢氣處理設備，其中該反應腔室被設置為使得該氣體入口位於該電漿反應空間上方，及該反應氣體從該氣體入口的一上部分向該電漿反應空間向下注入。 The exhaust gas treatment device as claimed in claim 1, wherein the reaction chamber is arranged such that the gas inlet is located above the plasma reaction space, and the reaction gas flows from an upper part of the gas inlet to the plasma reaction space down injection. 一種用於半導體製造設施的廢氣處理設備，該廢氣處理設備包括：一反應腔室，被配置為通過使用一電感耦合電漿反應來處理一廢氣；及一對氣體注入端口，包括一第一氣體注入端口及一第二氣體注入端口，一反應氣體通過該第一氣體注入端口及該第二氣體注入端口注入，其中該反應腔室包括一腔室主體及一氣體入口導管部分，該腔室主體提供一電漿反應空間，一電感耦合電漿在該電漿反應空間中發生反應，該氣體入口導管部分提供一氣體入口通道，該廢氣通過該氣體入口通道而被引入該電漿反應空間中，及該廢氣通過該氣體入口導管部分中的該第一氣體注入端口及該第 二氣體注入端口被注入到該氣體入口通道中，及該對氣體注入端口被佈置成使得通過該第一氣體注入端口的一氣體注入方向及通過該第二氣體注入端口的一氣體注入方向在該氣體入口通道上相交，及其中與該氣體入口通道連通的一第一連接通道及一第二連接通道形成在該電漿反應空間中，通過該氣體入口引入該電漿反應空間的該廢氣分流並分別流經該第一連接通道及該第二連接通道，及其中該反應氣體通過該第一氣體注入端口被導向該第二連接通道，該反應氣體通過第二氣體注入端口被導向該第一連接通道。 An exhaust gas treatment apparatus for a semiconductor manufacturing facility, the exhaust gas treatment apparatus including: a reaction chamber configured to treat an exhaust gas by using an inductively coupled plasma reaction; and a pair of gas injection ports including a first gas injection port and a second gas injection port, a reaction gas is injected through the first gas injection port and the second gas injection port, wherein the reaction chamber includes a chamber body and a gas inlet conduit portion, the chamber body providing a plasma reaction space, an inductively coupled plasma reacts in the plasma reaction space, the gas inlet conduit portion provides a gas inlet channel through which the waste gas is introduced into the plasma reaction space, and the exhaust gas passes through the first gas injection port in the gas inlet conduit portion and the second Two gas injection ports are injected into the gas inlet channel, and the pair of gas injection ports are arranged such that a gas injection direction through the first gas injection port and a gas injection direction through the second gas injection port are between the The gas inlet channel intersects, and a first connecting channel and a second connecting channel communicating with the gas inlet channel are formed in the plasma reaction space, and the waste gas introduced into the plasma reaction space through the gas inlet is divided and respectively flow through the first connection channel and the second connection channel, and wherein the reaction gas is directed to the second connection channel through the first gas injection port, and the reaction gas is directed to the first connection channel through the second gas injection port aisle. 如請求項5所述的廢氣處理設備，其中通過該第一氣體注入端口注入的該反應氣體被導向該第二氣體注入端口，而通過該第二氣體注入端口注入的該反應氣體被導向該第一氣體注入端口。 The exhaust gas treatment device according to claim 5, wherein the reaction gas injected through the first gas injection port is directed to the second gas injection port, and the reaction gas injected through the second gas injection port is directed to the second gas injection port A gas injection port. 如請求項5所述的廢氣處理設備，其中該對氣體注入端口為複數的形式。 The exhaust gas treatment device as claimed in claim 5, wherein the pair of gas injection ports is plural. 如請求項5所述的廢氣處理設備，其中該第一氣體注入端口及該第二氣體注入端口彼此相對地設置在該氣體入口導管部分的一外周上，使得該反應氣體朝向該氣體入口通道的一中心注入。 The exhaust gas treatment device as described in claim 5, wherein the first gas injection port and the second gas injection port are disposed opposite to each other on an outer circumference of the gas inlet conduit portion so that the reaction gas is directed toward the gas inlet channel One center infusion. 如請求項1或5所述的廢氣處理設備，其中該反應氣體是氧氣。 The exhaust gas treatment device as claimed in claim 1 or 5, wherein the reaction gas is oxygen. 如請求項9所述的廢氣處理設備，其中鋯與氧氣在該電漿反應空間內互相反應使得生成氧化鋯，鋯是通過在該電漿反應空間內的該廢氣中含有的一鋯源氣體熱分解而成。 The exhaust gas treatment device as claimed in claim 9, wherein zirconium and oxygen react with each other in the plasma reaction space to generate zirconia, and zirconium is heated by a zirconium source gas contained in the exhaust gas in the plasma reaction space broken down. 如請求項10所述的廢氣處理設備，其中該鋯源氣體是用作形成一氧化鋯薄膜的一前驅物的CpZr(NMe2)3。 The exhaust gas treatment device as claimed in claim 10, wherein the zirconium source gas is CpZr(NMe 2 ) 3 used as a precursor for forming a zirconium oxide thin film. 如請求項1或5所述的廢氣處理設備，進一步包括一收集器，該收集器被配置為收集從該反應腔室排出的該廢氣中含有的粉末。 The exhaust gas treatment device according to claim 1 or 5, further comprising a collector configured to collect powder contained in the exhaust gas discharged from the reaction chamber. 一種用於半導體製造設施的廢氣處理設備，該廢氣處理設備包括：一電漿反應器，被配置為通過使用一電感耦合電漿反應來處理一廢氣；及一氣體供應單元，被配置為向該電漿反應器供應一反應氣體，其中該電漿反應器包括：一腔室主體，該腔室主體提供一電漿反應空間，在該電漿反應空間中發生該電感耦合電漿反應；一氣體入口導管部分，從該腔室主體向一外側延伸並具有一氣體入口通道，該氣體入口通道穿過該氣體入口導管部分；一鐵氧體磁芯，設置在該腔室主體外側以圍繞該電漿反應空間；一天線線圈，纏繞在該鐵氧體磁芯上並施加一交流電(AC)；以及一反應氣體注入單元，該反應氣體注入單元注入該反應氣體，與該電漿反應空間連通的一氣體入口及一氣體出口形成在該腔室主體中，該氣體入口通道從該氣體入口延伸並與該電漿反應空間連通，與該氣體入口連通的一第一內部空間、與該氣體出口連通並與該第一內部空間間隔開的一第二內部空間以及一第一連接通道及第二連接通道形成在電漿反應空間中，穿過該第一內部空間及該第二內部空間的該第一連接通道及該第二連接通道相互連通，該第一連接通道及該第二連接通道以相互分離的狀態與該氣體入口平行佈置， 該廢氣通過該氣體入口流入該第一內部空間，分流到該第一連接通道及該第二連接通道，流經該第二內部空間，並通過該氣體出口排出，通過沿著連接該第一內部空間、該第二內部空間以及該第一連接通道及該第二連接通道的一環形放電迴路而施加到該天線線圈的AC電力在該電漿反應空間中產生電漿，該反應氣體注入單元包括一第一氣體注入端口及一第一氣體注入端口，該第一氣體注入端口位於該氣體入口導管部分中且向該第一連接通道注入該反應氣體，該第一氣體注入端口位於該氣體入口導管部分中且向該第二連接通道注入反應氣體，在該第一氣體注入端口中，從該第一氣體注入端口注入的該反應氣體以傾斜於該氣體入口通道的一中心軸線地注入，並且從該第二連接通道流動到該第一連接通道以穿過該氣體入口通道，及在該第二氣體注入端口中，從該第二氣體注入端口注入的該反應氣體以傾斜於該氣體入口通道的該中心軸線地注入，並且從該第一連接通道流動到該第二連接通道並穿過該氣體入口通道。 An exhaust gas treatment apparatus for a semiconductor manufacturing facility, the exhaust gas treatment apparatus including: a plasma reactor configured to treat an exhaust gas by using an inductively coupled plasma reaction; and a gas supply unit configured to supply the The plasma reactor supplies a reaction gas, wherein the plasma reactor includes: a chamber body, the chamber body provides a plasma reaction space, and the inductively coupled plasma reaction occurs in the plasma reaction space; a gas an inlet conduit portion extending from the chamber main body to an outside and having a gas inlet passage through which the gas inlet conduit portion passes; a ferrite core disposed outside the chamber main body to surround the electrical a plasma reaction space; an antenna coil, wound on the ferrite core and applying an alternating current (AC); and a reaction gas injection unit, which injects the reaction gas, and communicates with the plasma reaction space A gas inlet and a gas outlet are formed in the chamber body, the gas inlet channel extends from the gas inlet and communicates with the plasma reaction space, a first internal space communicated with the gas inlet communicates with the gas outlet A second internal space and a first connecting channel and a second connecting channel separated from the first internal space are formed in the plasma reaction space, and the first connecting channel passing through the first internal space and the second internal space A connecting channel and the second connecting channel communicate with each other, the first connecting channel and the second connecting channel are arranged in parallel with the gas inlet in a state of being separated from each other, The exhaust gas flows into the first internal space through the gas inlet, splits into the first connecting channel and the second connecting channel, flows through the second internal space, and is discharged through the gas outlet. space, the second inner space, and a circular discharge circuit of the first connection channel and the second connection channel, and the AC power applied to the antenna coil generates plasma in the plasma reaction space, and the reaction gas injection unit includes a first gas injection port and a first gas injection port, the first gas injection port is located in the gas inlet conduit portion and injects the reaction gas into the first connection channel, the first gas injection port is located in the gas inlet conduit part and inject reaction gas into the second connection channel, in the first gas injection port, the reaction gas injected from the first gas injection port is injected obliquely to a central axis of the gas inlet channel, and from The second connection channel flows to the first connection channel to pass through the gas inlet channel, and in the second gas injection port, the reaction gas injected from the second gas injection port is inclined to the direction of the gas inlet channel The central axis injects and flows from the first connecting channel to the second connecting channel and through the gas inlet channel. 一種用於半導體製造設施的廢氣處理設備，該廢氣處理設備包括：一電漿反應器，被配置為通過使用一電感耦合電漿反應來處理廢氣；及一氣體供應單元，被配置為向該電漿反應器供應一反應氣體，其中該電漿反應器包括：一腔室主體，該腔室主體提供一電漿反應空間，在該電漿反應空間中發生該電感耦合電漿反應；一氣體入口導管部分，從該腔室主體向一外側延伸並具有一氣體入口通道， 該氣體入口通道穿過該氣體入口導管部分；一鐵氧體磁芯，設置在該腔室主體外側以圍繞該電漿反應空間；一天線線圈，纏繞在該鐵氧體磁芯上並施加一交流電(AC)；以及一對氣體注入端口，該對氣體注入端口包括注入該反應氣體的一第一氣體注入端口及一第二氣體注入端口，與該電漿反應空間連通的一氣體入口及一氣體出口形成在該腔室主體中，該氣體入口通道從該氣體入口延伸並與該電漿反應空間連通，與該氣體入口連通的一第一內部空間、與該氣體出口連通並與該第一內部空間間隔開的一第二內部空間以及一第一連接通道及第二連接通道形成在電漿反應空間中，穿過該第一內部空間及該第二內部空間的該第一連接通道及該第二連接通道相互連通，該第一連接通道及該第二連接通道以相互分離的狀態與該氣體入口平行佈置，該廢氣通過該氣體入口流入該第一內部空間，分流到該第一連接通道及該第二連接通道，流經該第二內部空間，並通過該氣體出口排出，通過沿著連接該第一內部空間、該第二內部空間以及該第一連接通道及該第二連接通道的一環形放電迴路而施加到該天線線圈的AC電力在該電漿反應空間中產生電漿，該第一氣體注入端口及該第二氣體注入端口位於該氣體入口導管部分中且向該氣體入口通道注入該反應氣體，該第一氣體注入端口及該第二氣體注入端口彼此相對地設置在該氣體入口導管部分的一外周上， 從該第一氣體注入端口注入的該反應氣體被導向該第二氣體注入端口，及從該第二氣體注入端口注入的該反應氣體被導向該第一氣體注入端口。 An exhaust gas treatment apparatus for a semiconductor manufacturing facility, the exhaust gas treatment apparatus including: a plasma reactor configured to treat exhaust gas by using an inductively coupled plasma reaction; and a gas supply unit configured to supply The plasma reactor supplies a reaction gas, wherein the plasma reactor comprises: a chamber body, the chamber body provides a plasma reaction space in which the inductively coupled plasma reaction takes place; a gas inlet a conduit portion extending to an outside from the chamber body and having a gas inlet passage, The gas inlet channel passes through the gas inlet conduit part; a ferrite core is arranged outside the chamber main body to surround the plasma reaction space; an antenna coil is wound on the ferrite core and applied with a Alternating current (AC); and a pair of gas injection ports, the pair of gas injection ports includes a first gas injection port and a second gas injection port for injecting the reaction gas, a gas inlet and a gas inlet communicated with the plasma reaction space A gas outlet is formed in the chamber body, the gas inlet channel extends from the gas inlet and communicates with the plasma reaction space, a first internal space communicates with the gas inlet, communicates with the gas outlet and communicates with the first A second internal space and a first connecting channel and a second connecting channel separated by the internal space are formed in the plasma reaction space, the first connecting channel and the first connecting channel passing through the first internal space and the second internal space The second connecting channel communicates with each other, the first connecting channel and the second connecting channel are arranged in parallel with the gas inlet in a state of being separated from each other, the waste gas flows into the first internal space through the gas inlet, and is diverted to the first connecting channel and the second connecting channel, which flows through the second internal space and is discharged through the gas outlet, by connecting the first internal space, the second internal space and the first connecting channel and the second connecting channel an annular discharge circuit and AC power applied to the antenna coil generates plasma in the plasma reaction space, the first gas injection port and the second gas injection port are located in the gas inlet conduit portion and open to the gas inlet channel injecting the reaction gas, the first gas injection port and the second gas injection port are disposed opposite to each other on an outer circumference of the gas inlet conduit portion, The reaction gas injected from the first gas injection port is directed to the second gas injection port, and the reaction gas injected from the second gas injection port is directed to the first gas injection port.
TW110140697A 2020-11-02 2021-11-02 Exhaust gas treatment equipment for semiconductor manufacturing facilities TWI798907B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0144150 2020-11-02
KR1020200144150A KR102265878B1 (en) 2020-11-02 2020-11-02 Exhaust gas processing equipment for semiconductor production facility

Publications (2)

Publication Number Publication Date
TW202224066A TW202224066A (en) 2022-06-16
TWI798907B true TWI798907B (en) 2023-04-11

Family

ID=76602768

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110140697A TWI798907B (en) 2020-11-02 2021-11-02 Exhaust gas treatment equipment for semiconductor manufacturing facilities

Country Status (3)

Country Link
KR (1) KR102265878B1 (en)
TW (1) TWI798907B (en)
WO (1) WO2022092502A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102265878B1 (en) * 2020-11-02 2021-06-16 (주)엘오티씨이에스 Exhaust gas processing equipment for semiconductor production facility
KR20240029900A (en) 2022-08-29 2024-03-07 (주)엘오티씨이에스 Plasma equipment for processing exhaust gas of semiconductor process chamber and plasma blocking apparatus therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101352164B1 (en) * 2012-10-17 2014-01-27 (주)클린팩터스 Method and vacuum system for removing metallic by-products
KR20150124293A (en) * 2014-04-28 2015-11-05 (주)클린팩터스 Plasma reactor for purifying exhaust gas of the process facility

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284052B2 (en) * 1998-08-19 2001-09-04 Sharp Laboratories Of America, Inc. In-situ method of cleaning a metal-organic chemical vapor deposition chamber
KR100662006B1 (en) * 2004-08-05 2006-12-27 전남대학교산학협력단 Manufacturing method of titanium oxide using chemical vapour deposition
KR101448449B1 (en) 2014-01-13 2014-10-13 주식회사 테라텍 Using a high-density plasma source perfluorocarbons redemption and harmful gas cracker
KR102077759B1 (en) * 2019-05-22 2020-02-14 (주)엘오티씨이에스 Gas exhausting equipment and method for inhibiting deposition of powder in exhaust pipe for semiconductor production facility
KR102265878B1 (en) * 2020-11-02 2021-06-16 (주)엘오티씨이에스 Exhaust gas processing equipment for semiconductor production facility

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101352164B1 (en) * 2012-10-17 2014-01-27 (주)클린팩터스 Method and vacuum system for removing metallic by-products
KR20150124293A (en) * 2014-04-28 2015-11-05 (주)클린팩터스 Plasma reactor for purifying exhaust gas of the process facility

Also Published As

Publication number Publication date
TW202224066A (en) 2022-06-16
KR102265878B1 (en) 2021-06-16
WO2022092502A1 (en) 2022-05-05

Similar Documents

Publication Publication Date Title
TWI798907B (en) Exhaust gas treatment equipment for semiconductor manufacturing facilities
US11710623B2 (en) Vacuum pump protection against deposition byproduct buildup
KR100782369B1 (en) Device for making semiconductor
KR102469751B1 (en) Valve manifold deadleg elimination via reentrant flow path
TWI730502B (en) System and apparatus for supplying improved gas flow to a processing volume of a processing chamber
TW202025860A (en) Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
CN101859694A (en) Film forming apparatus and film forming method
JP7479808B2 (en) Substrate Processing Equipment
KR102177129B1 (en) Apparatus for treating waste gas
TWI553148B (en) Apparatus for treating a gas stream
EP2032235B1 (en) Method and apparatus for treating a gas stream
KR101006384B1 (en) Waste Gas Purification Apparatus
JP2022539007A (en) spatially controlled plasma
CN111149437B (en) Nozzle for delivering a plasma stream for plasma abatement and related methods
KR20050029020A (en) Waste gas scrubber integral with vaccum pump
JP7195439B2 (en) Gas pollutant treatment equipment
KR20090132145A (en) Processing apparatus for waste gas
TWI809805B (en) Semiconductor manufacturing facility and method of operating the same
KR200336937Y1 (en) Waste gas scrubber integral with vaccum pump
JP2008181799A (en) Plasma processing device, and plasma processing method
KR20220080973A (en) A plasma generator and an apparatus for treatment of process by-product having the plasma generator
KR100859265B1 (en) Process gas inlet tube structure of the semiconductor fabrication equipment
KR100284325B1 (en) Waste gas treatment system for atmospheric pressure equipment
CN118053746A (en) Substrate processing method
KR20210007587A (en) A Plasma Scrubber Apparatus With a Structure of Distributing a Supplying Amount