WO2022089342A1 - 静电卡盘及半导体工艺设备 - Google Patents

静电卡盘及半导体工艺设备 Download PDF

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Publication number
WO2022089342A1
WO2022089342A1 PCT/CN2021/125979 CN2021125979W WO2022089342A1 WO 2022089342 A1 WO2022089342 A1 WO 2022089342A1 CN 2021125979 W CN2021125979 W CN 2021125979W WO 2022089342 A1 WO2022089342 A1 WO 2022089342A1
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Prior art keywords
electrode
power supply
electrically connected
distribution
radio frequency
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PCT/CN2021/125979
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English (en)
French (fr)
Inventor
刘建
陈星�
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to KR1020237013490A priority Critical patent/KR102767799B1/ko
Priority to JP2023524642A priority patent/JP7558408B2/ja
Publication of WO2022089342A1 publication Critical patent/WO2022089342A1/zh
Priority to US18/309,227 priority patent/US12362217B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Definitions

  • the present application relates to the technical field of semiconductor processing, and in particular, the present application relates to an electrostatic chuck and semiconductor processing equipment.
  • the lower electrode structure of semiconductor process equipment generally includes an electrostatic chuck, a radio frequency system and a DC power supply system.
  • the Electrostatic Chuck (ESC) includes a ceramic layer, a heating layer and a base layer arranged in sequence from top to bottom, wherein the ceramic layer is provided with an adsorption electrode for adsorbing the wafer, and the heating layer is provided with a heating wire , used to heat the wafer.
  • the adsorption electrodes are generally bipolar, that is, a DC positive electrode and a DC negative electrode, both of which are located in the ceramic layer and are electrically connected to the DC power supply system through a cable, and the DC power supply system can provide DC to the DC positive electrode and the DC negative electrode. voltage to achieve the adsorption of the wafer.
  • the radio frequency system is electrically connected to the base layer through cables or copper posts, and the radio frequency energy is fed through the base layer.
  • the layers of the electrostatic chuck are generally connected and fixed by gluing, and there are certain tolerances in the processing of the ceramic layer, the heating layer and the base layer, during the bonding process of the multi-layer structure, the glue layers at different positions
  • the thickness cannot be absolutely uniform, which can lead to differences in capacitance formed between different locations of the base layer and the wafer placed on the upper surface of the ceramic layer, resulting in different RF energy reaching different locations on the wafer, which affects the Consistency of process results.
  • the present application proposes an electrostatic chuck and semiconductor process equipment to solve the technical problem of inconsistent process results due to different radio frequency energy on the electrostatic chuck in the prior art.
  • an embodiment of the present application provides an electrostatic chuck, which is arranged in a process chamber of a semiconductor processing equipment, the electrostatic chuck includes an insulating layer for carrying a wafer and an electrostatic chuck arranged on the insulating layer
  • the electrode assembly inside wherein the electrode assembly is electrically connected with a DC power supply and a radio frequency power supply, and is used to adsorb the workpiece to be processed on the insulating layer when the DC power supply is loaded with a DC power, and the radio frequency
  • the radio frequency energy reaching different positions of the insulating layer is the same.
  • the electrode assembly includes an adsorption electrode and a distribution electrode, and the adsorption electrode is electrically connected to the DC power supply and the radio frequency power supply through the distribution electrode; The distances from the connection point of the electrical connection of the distribution electrode to the different positions of the edge of the adsorption electrode are the same.
  • the adsorption electrode includes a first electrode and a second electrode arranged at intervals;
  • the distribution electrode includes a first distribution electrode and a second distribution electrode arranged at intervals, and the first distribution electrode and The first electrode is electrically connected, and the second distribution electrode is electrically connected to the second electrode; and the first distribution electrode and the second distribution electrode are respectively electrically connected to the positive electrode and the negative electrode of the DC power supply , and the first distribution electrode and the second distribution electrode are both electrically connected to the radio frequency power supply;
  • connection points of the first electrode that are electrically connected to the first distribution electrode and the different positions of the edge of the first electrode are the same; the connection of the second electrode to the second distribution electrode is electrically connected. The distances from the point to different positions of the edge of the second electrode are the same;
  • the distance from the connection point of the first distribution electrode that is electrically connected to the radio frequency power supply to the connection point that is electrically connected to the first electrode is the first distance
  • the second distribution electrode is electrically connected to the radio frequency power supply.
  • the distance from the connection point of , to the connection point electrically connected to the second electrode is a second distance, and the first distance is the same as the second distance.
  • the first electrodes there are a plurality of the first electrodes with the same shape, and the plurality of the first electrodes are located on the same plane and spaced apart from each other; the first distribution electrode is simultaneously connected with the plurality of the first electrodes.
  • An electrode is electrically connected, and the connection points of the different first electrodes that are electrically connected to the first distribution electrodes are at the same location.
  • the plurality of first electrodes are disposed around the second electrodes, and the orthographic projection areas of the plurality of first electrodes on the bearing surface of the insulating layer are the same as the The orthographic projection areas of the second electrodes on the bearing surface of the insulating layer are the same.
  • the second electrode is in the shape of a disc, a plurality of the first electrodes surround the second electrode to form a ring shape, and the center of the second electrode is connected to a plurality of The centers of the ring formed by the first electrodes coincide.
  • the first distribution electrode includes a center portion and a plurality of edge portions that are electrically connected to each other, wherein the center of the center portion coincides with the center of the second electrode, and the center There is a first connection point on the center of the part to be electrically connected to the radio frequency power supply; a plurality of the edge parts are distributed at intervals along the circumference of the center part, and the number of the edge parts is the same as the number of the first electrodes, and are arranged in a one-to-one correspondence, each of the edge portions has a second connection point, the second connection point is electrically connected to the corresponding geometric center of the first electrode, and the geometric center of the first electrode satisfies: The distances from the geometric center of the first electrode to different positions of the edge of the first electrode are the same;
  • the second distribution electrode has a third connection point and a fourth connection point, wherein the third connection point is electrically connected to the geometric center of the second electrode, and the fourth connection point is electrically connected to the radio frequency power supply. connection; the geometric center of the second electrode satisfies: the distances from the geometric center of the second electrode to different positions of the edge of the second electrode are the same;
  • the distance from the first connection point to each of the second connection points is the first distance
  • the distance from the fourth connection point to the third connection point is the second distance
  • each of the edge portions is in the shape of a strip, and is arranged along the radial direction of the center portion; one end of each of the edge portions is connected to the center portion and is electrically connected, The other end of each of the edge portions has the second connection point.
  • the second distribution electrode is arc-shaped, and the third connection point and the fourth connection point are located at two ends of the second distribution electrode, respectively.
  • the electrostatic chuck further includes a filter and an anti-short circuit circuit, wherein the first distribution electrode and the second distribution electrode are respectively connected to the DC power supply through the filter.
  • the positive electrode and the negative electrode are electrically connected, and the first distribution electrode and the second distribution electrode are both electrically connected to the radio frequency power supply through the short-circuit prevention circuit;
  • the filter is used to prevent the radio frequency power supply from interfering with the operation of the DC power supply;
  • the short circuit prevention circuit is used to avoid short circuit between the positive electrode and the negative electrode of the DC power supply.
  • the short-circuit prevention circuit includes two branches and a capacitor arranged on each branch, wherein one ends of the two branches are respectively connected to the first distribution electrode and the other branch.
  • the second distribution electrodes are respectively connected to two circuits that are electrically connected to the positive pole and the negative pole of the DC power supply; the other ends of the two branches are both electrically connected to the radio frequency power supply.
  • an embodiment of the present application provides a semiconductor process equipment, including a process chamber, a DC power supply, a radio frequency power supply, and the electrostatic chuck provided in the first aspect disposed in the process chamber, the DC power supply Both a power supply and the radio frequency power supply are electrically connected to the electrostatic chuck.
  • the radio frequency power supply and the DC power supply are electrically connected with the electrode assembly, and the electrode assembly is used to adsorb the workpiece to be processed on the insulating layer when the DC power supply loads the DC power, and when the radio frequency power supply loads the radio frequency power, the electrode assembly is used to make the workpiece reach the insulating layer.
  • the RF energy is the same at different positions of the layer. In this way, the adsorption and fixation of the wafer can be realized, and the RF power provided by the RF power supply can be directly fed into the electrode assembly, and the RF energy reaching different positions of the insulating layer can be guaranteed to be the same, thereby avoiding the electrostatic jam in the prior art.
  • FIG. 1 is a schematic structural diagram of an electrostatic chuck provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of an adsorption electrode provided by an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a first distribution electrode provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a second distribution electrode provided by an embodiment of the present application.
  • FIG. 5 is another schematic structural diagram of the electrostatic chuck provided by the embodiment of the application.
  • FIG. 6 is a schematic diagram of a layout of a distribution electrode in a ceramic layer provided by an embodiment of the present application.
  • FIG. 7 is another schematic diagram of the layout of the distribution electrode in the ceramic layer according to the embodiment of the present application.
  • FIG. 1 is a schematic structural diagram of the electrostatic chuck provided by the embodiment of the present application.
  • the electrostatic chuck 1 includes an insulating layer 11 for carrying a wafer (not shown in the figure) and an electrode assembly 2 disposed in the insulating layer 11 , wherein the electrode assembly 2 is connected to a DC power supply 30 and a radio frequency
  • the power source 31 is electrically connected to adsorb the wafer on the insulating layer 11 when the DC power source 30 is loaded with DC power, and when the RF power source 31 is loaded with RF power, the RF energy reaching different positions of the insulating layer 11 is the same.
  • the electrostatic chuck 1 may include an insulating layer 11 , a heating layer 12 and a base layer 13 arranged in sequence from top to bottom, wherein the base layer 13 is used to be fixed in the process chamber ( FIG. (not shown), and supports the heating layer 12 and the insulating layer 11; the heating layer 12 is used to heat the insulating layer 11 to achieve temperature control of the wafer; the insulating layer 11 includes a bearing surface for carrying the wafer , the insulating layer 11 can be specifically made of ceramic material, but the embodiment of the present application is not limited to this.
  • the electrode assembly 2 is, for example, disposed in the insulating layer 11 at a certain distance below the bearing surface.
  • the electrode assembly 2 may be electrically connected to the DC power source 30 through the cable 21 , and electrically connected to the radio frequency power source 31 through the cable 21 and the cable 22 .
  • the DC power supply 30 loads DC power to the electrode assembly 2 through the cable 21, the electrode assembly 2 and the wafer placed on the insulating layer 11 generate electrostatic attraction, thereby realizing the adsorption and fixation of the wafer; when the RF power supply 31 passes through the cable
  • a RF bias can be generated on the wafer placed on the insulating layer 11 .
  • the electrode assembly 2 can make the radio frequency energy reaching different positions of the insulating layer 11 the same. Since the radio frequency power provided by the radio frequency power supply 31 is directly fed into the electrode assembly 2, and the radio frequency energy reaching different positions of the insulating layer 11 is the same, this avoids the effect of the capacitance difference between the multi-layer structures of the electrostatic chuck in the prior art on the radio frequency energy. The impact of consistency, thereby greatly improving the consistency of wafer process results, thereby improving wafer yield.
  • the electrode assembly 2 includes an adsorption electrode 4 and a distribution electrode 5, and the adsorption electrode 4 is electrically connected to the DC power supply 30 and the radio frequency power supply 31 through the distribution electrode 5;
  • the direct current is sent to the adsorption electrode 4, and the radio frequency power provided by the radio frequency power supply 31 is fed into the adsorption electrode 4, and the connection point of the adsorption electrode 4 electrically connected with the distribution electrode 5 is connected to the edge of the adsorption electrode 4 at different positions. the same distance.
  • the adsorption electrode 4 is provided with a radio frequency feeding point (ie, the above-mentioned connection point), the radio frequency feeding point is used for electrical connection with the distribution electrode 5, and the position of the radio frequency feeding point on the adsorption electrode 4 satisfies :
  • the distances from the RF feed point to different positions on the edge of the adsorption electrode 4 are the same, so that the consistency of the RF paths in the adsorption electrode 4 can be ensured, so that the RF energy reaching different positions of the insulating layer 11 can be the same.
  • the adsorption electrode 4 includes a first electrode 41 and a second electrode 42 arranged at intervals; the distribution electrode 5 includes an interval arranged
  • the first distribution electrode 51 and the second distribution electrode 52 the first distribution electrode 51 is electrically connected to the first electrode 41, and the second distribution electrode 52 is electrically connected to the second electrode 42; the first distribution electrode 51 and the second distribution electrode 52 are respectively It is electrically connected to the positive electrode and the negative electrode of the DC power supply 30 , and the first distribution electrode 51 and the second distribution electrode 52 are both electrically connected to the radio frequency power supply 31 .
  • the distances from the connection point of the first electrode 41 electrically connected to the first distribution electrode 51 to the different positions of the edge of the first electrode 41 are the same, so as to ensure the consistency of the radio frequency path in the first electrode 41;
  • the distances from the connection points of the two electrodes 42 electrically connected to the second distribution electrode 52 to different positions of the edge of the second electrode 42 are the same, so as to ensure the consistency of the radio frequency paths in the second electrode 42 .
  • the distance from the connection point of the first distribution electrode 51 that is electrically connected to the radio frequency power supply 31 to the connection point that is electrically connected to the first electrode 41 is the first distance
  • the connection point of the second distribution electrode 52 that is electrically connected to the radio frequency power supply 31 to the The distance between the connection points where the second electrode 42 is electrically connected is the second distance
  • the first distance is the same as the second distance, so as to ensure the consistency of the radio frequency path between the first electrode 41 and the second electrode 42 .
  • the first distribution electrode 51 is electrically connected to the positive electrode of the DC power supply 30, and the second distribution electrode is electrically connected to the negative electrode of the DC power supply 30, or the first distribution electrode 51 can also be electrically connected to the negative electrode of the DC power supply 30.
  • the second distribution electrode is electrically connected to the positive electrode of the DC power supply 30 .
  • the first electrode 41 and the second electrode 42 can be electrically connected to the DC power supply 30, and the radio frequency power provided by the radio frequency power supply 31 can be supplied to the first electrode 41 and the second electrode 41.
  • the electrode 42 is fed in, the structure is relatively simple and easy to implement, and electromagnetic interference between the first electrode 41 and the second electrode 42 can be avoided.
  • FIG. 5 is another schematic structural diagram of the electrostatic chuck provided by the embodiment of the present application.
  • the electrostatic chuck is an improvement made on the basis of the electrostatic chuck shown in FIG. 1 .
  • the electrostatic chuck 1 further includes a filter
  • the first distribution electrode 51 and the second distribution electrode 52 are respectively electrically connected to the positive and negative electrodes of the DC power supply 30 through the filter 33, and the first distribution electrode 51 and the second distribution electrode 52 pass through the filter 33 and the short-circuit prevention circuit.
  • the above-mentioned short-circuit prevention circuit is electrically connected with the radio frequency power supply 31; the filter 33 is used to prevent the radio frequency power supply 31 from affecting the work of the DC power supply 30, so as to avoid adverse effects on the electrode assembly 2; the filter 33 can be arranged close to the DC power supply 30. location.
  • the short circuit prevention circuit is used to avoid short circuit between the positive and negative electrodes of the DC power supply 30 .
  • the short-circuit proof circuit includes two branches (ie, cables 22 ) and capacitors 32 disposed on each branch (ie, cables 22 ), wherein the two branches (ie, cables 22 ) That is, one end of the cable 22) is connected to the two circuits (ie, the cable 21) where the first distribution electrode 51 and the second distribution electrode 52 are electrically connected to the positive and negative electrodes of the DC power supply 30, respectively; the two branches (ie, the other ends of the cables 22 ) are electrically connected to the radio frequency power supply 31 .
  • the capacitor 32 Since the capacitor 32 has the characteristics of blocking direct current and alternating current, the capacitor 32 needs to be able to withstand the adsorption voltage of the DC power supply 30 and the radio frequency voltage and radio frequency current of the radio frequency power supply 31.
  • the adsorption voltage is generally ⁇ 2000V (volts)
  • the radio frequency current is generally is 1-2A (Ampere)
  • the capacitor 32 needs to satisfy the withstand voltage of 2000V or more and the withstand current of 2A or more, but the embodiment of the present application is not limited to this.
  • each first electrode 41 is provided with a radio frequency feed point (ie, the above-mentioned connection point), and the radio frequency feed point is used for electrical connection with the first distribution electrode 51 .
  • the positions of the RF feeding points are the same to ensure the consistency of the RF paths between different first electrodes 41 .
  • the plurality of first electrodes 41 are disposed around the second electrodes 42 , and the orthographic projection areas of the plurality of first electrodes 41 on the bearing surface of the insulating layer 11 are all insulated from the second electrodes 42 .
  • the orthographic projection areas on the bearing surface of the layer 11 are the same.
  • the second electrode 42 may be in the shape of a disk, a plurality of first electrodes 41 surround the second electrode 42 to form a ring shape, and the center of the second electrode 42 is connected to the plurality of first electrodes 41 .
  • the centers of the enclosed rings coincide.
  • the structure of the embodiment of the present application is simple and easy to manufacture, thereby greatly reducing the processing and manufacturing cost.
  • the DC power supply 30 can be used to apply a negative voltage to the first electrode 41 and a positive voltage to the second electrode 42, which can not only avoid affecting the plasma in the process chamber, but also avoid the electrostatic chuck. 1.
  • the plurality of first electrodes 41 are electrically isolated, and there is a gap between any two adjacent first electrodes 41, and the gap can be set to 0.1 mm-1 mm.
  • the first electrode 41 and the second electrode 42 are also electrically isolated, and there is a gap between the first electrode 41 and the second electrode 42, and the gap needs to meet the withstand voltage requirement between the positive and negative electrodes of the DC power supply 30.
  • the gap Can be set to 0.1mm-3mm.
  • the embodiments of the present application do not limit the shape, quantity and arrangement of the first electrodes 41 and the second electrodes 42 .
  • the embodiments of the present application are not limited to this, and those skilled in the art can adjust the settings according to actual conditions.
  • the plurality of first electrodes 41 are disposed on the same layer, that is, the plurality of first electrodes 41 are disposed on the same horizontal plane in the insulating layer 11 .
  • the first electrode 41 may be an electrode sheet formed in the insulating layer 11 , for example, may be made of tungsten or platinum, but the embodiment of the present application is not limited thereto.
  • the first distribution electrode 51 is also disposed in the insulating layer 11 and located below the first electrode 41 .
  • the first distribution electrode 51 is electrically connected to the plurality of first electrodes 41 at the same time, and is used for evenly distributing the radio frequency energy provided by the radio frequency power supply 31 to the plurality of first electrodes 41 .
  • the frequency of the low frequency radio frequency signal is generally 2KHz (kilohertz) or 13.56MHz (megahertz), for example, for a commonly used low frequency radio frequency signal of 13.56MHz, its wavelength is 22 meters.
  • the frequency of high-frequency radio frequency signals is generally about 50MHz-100MHz, and the radio frequency period is generally 10ns-20ns. When the radio frequency period is 10ns, the frequency is 108Hz-100MHz, and its wavelength is 3m.
  • the lower the frequency of the radio frequency signal the longer the wavelength; conversely, the higher the frequency of the radio frequency signal, the shorter the wavelength.
  • the greater the distance from the RF feed point on the electrode to the edge the easier the waveform is to diverge on the electrode, resulting in poor consistency of the waveform on the electrode, thereby affecting the process results.
  • the distance from the RF feeding point on the electrode to the edge is smaller than the wafer diameter (for example, 300 mm), it can be ensured that the waveform will not be excessively spread on each first electrode 41 .
  • the embodiment of the present application is not only applicable to low frequency radio frequency The same applies to high-frequency RF signals.
  • the first distribution electrode 51 includes a center portion and a plurality of edge portions that are electrically connected to each other, wherein the center of the center portion and the center of the second electrode 42 are in the insulating layer 11 .
  • the orthographic projections on the bearing surface of the center part coincide, and there is a first connection point 512 on the center of the center part, and the first connection point 512 is electrically connected to the radio frequency power supply 31;
  • the number is the same as the number of the first electrodes 41, and they are arranged in a one-to-one correspondence.
  • Each edge has a second connection point 511.
  • the second connection point 511 is electrically connected to the geometric center of the corresponding first electrode 41.
  • connection portion is provided between the second connection point 511 and the geometric center of each first electrode 41 to achieve electrical conduction between the two.
  • the connection portion is, for example, a vertical connection line, so as to shorten the connection distance.
  • the first distribution electrode 51 is provided with a radio frequency feed point (ie, the above-mentioned first connection point 512 ), and the radio frequency feed point is used for electrical connection with the radio frequency power supply 31 , and the first distribution electrode 51 is also provided with a Multiple RF feed-out points (ie, the above-mentioned second connection points 511 ), each RF feed-out point is electrically connected to the geometric center of each first electrode 41 , so that radio frequency distribution to the multiple first electrodes 41 can be realized.
  • a radio frequency feed point ie, the above-mentioned first connection point 512
  • the radio frequency feed point is used for electrical connection with the radio frequency power supply 31
  • the first distribution electrode 51 is also provided with a Multiple RF feed-out points (ie, the above-mentioned second connection points 511 )
  • each RF feed-out point is electrically connected to the geometric center of each first electrode 41 , so that radio frequency distribution to the multiple first electrodes 41 can be realized.
  • each edge portion is in the shape of a strip and is arranged along the radial direction of the center portion; one end of each edge portion is connected to the center portion and is electrically connected, and each edge portion is The other end of the edge portion has the above-mentioned second connection point 511 . That is, the plurality of strip-shaped edge portions are radially distributed from the center portion to the periphery.
  • the second distribution electrode 52 has a third connection point 521 and a fourth connection point 522 , wherein the third connection point 521 is electrically connected to the geometric center of the second electrode 42 , and the second electrode 42 is The geometric center satisfies: the distances from the geometric center of the second electrode 42 to different positions of the edge of the first electrode 41 are the same.
  • the geometric center of the second electrode 42 is the center of the circle.
  • a connection portion is provided between the second connection point 511 and the geometric center of each second electrode 42 to achieve electrical conduction between the two.
  • the connection portion is, for example, a vertical connection line, so as to shorten the connection distance.
  • the second distribution electrode 52 is provided with a radio frequency feed point (ie, the above-mentioned fourth connection point 522 ), and the radio frequency feed point is used for electrical connection with the radio frequency power supply 31 , and the second distribution electrode 52 is also provided with a The radio frequency feed-out point (ie, the above-mentioned third connection point 521 ) is electrically connected to the geometric center of the second electrode 42 , so that the radio frequency distribution to the second electrode 42 can be realized.
  • a radio frequency feed point ie, the above-mentioned fourth connection point 522
  • the radio frequency feed-out point ie, the above-mentioned third connection point 521
  • the distance from the first connection point 512 on the first distribution electrode 51 to each of the second connection points 511 is the first distance
  • the distance from the fourth connection point 522 to the third connection point 521 is the second distance.
  • the first distance is equal to the second distance, so that the path length of the RF from the RF input of the first distribution electrode 51 to the RF output can be consistent with the path length of the RF input from the second distribution electrode 52 to the RF output , so that the consistency of the radio frequency path between the first electrode 41 and the second electrode 42 can be ensured.
  • the above-mentioned first distance and second distance both refer to the path length of the radio frequency from the radio frequency feeding point to the radio frequency feeding point.
  • the first distribution electrode 51 and the second distribution electrode 52 can realize the radio frequency distribution to the plurality of first electrodes 41 and the second electrodes 42 , which makes the structure of the embodiment of the present application simple and easy to implement. Moreover, since the first distribution electrode 51 and the second distribution electrode 52 are designed independently of each other, the structure of the embodiment of the present application is further simplified and easy to use, thereby greatly reducing the design and manufacturing cost.
  • the second distribution electrode 52 is arc-shaped, and the third connection point 521 and the fourth connection point 522 are located at two ends of the second distribution electrode 52 respectively.
  • the arc length of the circular arc between the third connection point 521 and the fourth connection point 522 is the above-mentioned second distance.
  • the embodiment of the present application does not limit the specific structure of the second distribution electrode 52, for example, the second distribution electrode 52 may also adopt other curved shapes. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
  • the first distribution electrode 51 and the second distribution electrode 52 may be disposed in the same layer or in different layers.
  • the first distribution electrode 51 and the second distribution electrode 52 can be disposed on the same layer, that is, they are located on the same level in the insulating layer 11 and below the adsorption electrode 4 , and, The first distribution electrode 51 and the second distribution electrode 52 are arranged at intervals, and there is a gap of 0.1 mm-3 mm between them to ensure the withstand voltage requirement.
  • the thickness of the insulating layer 11 can be greatly reduced, so that the space occupied by the insulating layer 11 can be reduced, so as to meet the scenarios where the thickness of the insulating layer 11 is limited.
  • the first connection point 512 on the first distribution electrode 51 may be located, for example, directly below the geometric center of the second electrode 42 to ensure that the Each of the second connection points 511 on the first distribution electrode 51 can correspond to the geometric center of each of the first electrodes 41 .
  • the third connection point 521 on the second distribution electrode 52 can be set at a position slightly deviated from directly below the geometric center of the second electrode 42. Since the deviation is small, it will not affect the The uniformity of the RF feeding can avoid the interference of the positions of the first distribution electrode 51 and the second distribution electrode 52 .
  • the first distribution electrode 51 and the second distribution electrode 52 may also be disposed in different layers, that is, they are located on two horizontal planes with different heights in the insulating layer 11 , and are located below the adsorption electrode 4 . Since the height difference between the first distribution electrode 51 and the second distribution electrode 52 is small, even if different layers are designed, the uniformity of the RF feeding will not be affected.
  • the second distribution electrode 52 can be made higher than the first distribution electrode 51, so that the first connection on the first distribution electrode 51 can be made
  • the point 512 can be located just below the geometric center of the second electrode 42 to ensure that each second connection point 511 on the first distribution electrode 51 can correspond to the geometric center of each first electrode 41; at the same time, the second distribution electrode 52
  • the third connection point 521 can also be located just below the geometric center of the second electrode 42 without interfering with the position of the first distribution electrode 51, so that the first distribution electrode 51 and the second distribution electrode 52 can be guaranteed. Uniformity of RF feed.
  • an embodiment of the present application provides a semiconductor process equipment, including a process chamber, a DC power supply, a radio frequency power supply, and an electrostatic chuck, a DC power supply and a radio frequency power supply arranged in the process chamber as provided in the above embodiments Both are electrically connected to the electrostatic chuck.
  • the radio frequency power supply and the DC power supply are electrically connected to the electrode assembly, and the electrode assembly is used for adsorbing the workpiece to be processed on the insulating layer when the DC power supply is loaded with DC power, and when the radio frequency power supply is loaded with radio frequency power, the electrode assembly is used to make the workpiece reach the insulation layer.
  • the RF energy is the same at different positions of the layer. In this way, the wafer can be adsorbed and fixed, and the radio frequency power provided by the radio frequency power supply can be directly fed into the electrode assembly, and the radio frequency energy reaching different positions of the insulating layer can be guaranteed to be the same, thereby avoiding the electrostatic jam in the prior art.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as “first” or “second” may expressly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise specified, "plurality" means two or more.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements.
  • installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements.

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

本申请实施例提供了一种静电卡盘及半导体工艺设备。该静电卡盘用于设置在半导体工艺设备的工艺腔室内，静电卡盘包括用于承载晶圆的绝缘层和设置于绝缘层内的电极组件，其中，电极组件与直流电源和射频电源电连接，用于在直流电源加载直流功率时将晶圆吸附于绝缘层上，以及在射频电源加载射频功率时，使到达绝缘层不同位置处的射频能量相同。本申请实施例既可以实现对晶圆的吸附固定，又可以使射频电源提供的射频功率直接馈入到电极组件，且保证到达绝缘层不同位置处的射频能量相同，从而避免了现有技术中静电卡盘的多层结构之间电容差异对射频能量一致性的影响。

Description

静电卡盘及半导体工艺设备 技术领域
本申请涉及半导体加工技术领域，具体而言，本申请涉及一种静电卡盘及半导体工艺设备。
背景技术
目前，半导体工艺设备的下电极结构一般包括静电卡盘、射频系统及直流供电系统。静电卡盘(Electrostatic Chuck,ESC)包括自上而下依次设置的陶瓷层、加热层及基座层，其中，陶瓷层内部设置有吸附电极，用于吸附晶圆，加热层内部设置有加热丝，用于对晶圆进行加热。
现有技术中吸附电极一般为双极，即，直流正极和直流负极，二者均位于陶瓷层中，并通过线缆与直流供电系统电连接，直流供电系统可向直流正极和直流负极提供直流电压，以实现对晶圆的吸附。此外，射频系统通过线缆或者铜柱与基座层电连接，通过基座层馈入射频能量。由于静电卡盘的各层之间一般通过胶粘的方式连接固定，而且陶瓷层、加热层及基座层的加工存在一定公差，在多层结构进行粘接过程中，不同位置处的胶层厚度无法做到绝对一致，这可能会导致基座层的不同位置与置于陶瓷层上表面的晶圆之间形成的电容存在差异，从而导致到达晶圆不同位置处的射频能量不同，从而影响工艺结果的一致性。
发明内容
本申请针对现有方式的缺点，提出一种静电卡盘及半导体工艺设备，用以解决现有技术存在由于静电卡盘上的射频能量不同导致工艺结果不一致的技术问题。
第一个方面，本申请实施例提供了一种静电卡盘，用于设置在半导体工艺设备的工艺腔室内，所述静电卡盘包括用于承载晶圆的绝缘层和设置于所述绝缘层内的电极组件，其中，所述电极组件与直流电源和射频电源电连接，用于在所述直流电源加载直流功率时将所述待加工工件吸附于所述绝缘层上，以及在所述射频电源加载射频功率时，使到达所述绝缘层不同位置处的射频能量相同。
于本申请的一实施例中，所述电极组件包括吸附电极和分配电极，所述吸附电极通过所述分配电极与所述直流电源和所述射频电源电连接；并且，所述吸附电极的与所述分配电极电连接的连接点到所述吸附电极的边缘不同位置处的距离相同。
于本申请的一实施例中，所述吸附电极包括间隔设置的第一电极和第二电极；所述分配电极包括间隔设置的第一分配电极和第二分配电极，所述第一分配电极与所述第一电极电连接，所述第二分配电极与所述第二电极电连接；并且，所述第一分配电极和所述第二分配电极分别与所述直流电源的正极和负极电连接，且所述第一分配电极和所述第二分配电极均与所述射频电源电连接；
所述第一电极的与所述第一分配电极电连接的连接点到所述第一电极的边缘不同位置处的距离相同；所述第二电极的与所述第二分配电极电连接的连接点到所述第二电极的边缘不同位置处的距离相同；
所述第一分配电极的与所述射频电源电连接的连接点到与所述第一电极电连接的连接点的距离为第一距离，所述第二分配电极的与所述射频电源电连接的连接点到与所述第二电极电连接的连接点的距离为第二距离，所述第一距离与所述第二距离相同。
于本申请的一实施例中，所述第一电极为多个，且形状相同，多个所述第一电极位于同一平面，且相互间隔；所述第一分配电极同时与多个所述第 一电极电连接，且不同的所述第一电极的与所述第一分配电极电连接的连接点位置相同。
于本申请的一实施例中，多个所述第一电极环绕所述第二电极设置，且多个所述第一电极各自在所述绝缘层的承载面上的正投影面积均与所述第二电极在所述绝缘层的承载面上的正投影面积相同。
于本申请的一实施例中，所述第二电极呈圆盘状，多个所述第一电极在所述第二电极的周围环绕形成环状，且所述第二电极的中心与多个所述第一电极围成的环状的中心重合。
于本申请的一实施例中，所述第一分配电极包括相互电导通的中心部和多个边缘部，其中，所述中心部的中心与所述第二电极的中心重合，且所述中心部的中心上具有第一连接点与所述射频电源电连接；多个所述边缘部沿所述中心部的周向间隔分布，所述边缘部的数量与所述第一电极的数量相同，且一一对应地设置，每个所述边缘部上具有第二连接点，所述第二连接点与对应的所述第一电极的几何中心电连接，所述第一电极的几何中心满足：从所述第一电极的几何中心到所述第一电极的边缘不同位置处的距离相同；
所述第二分配电极上具有第三连接点和第四连接点，其中，所述第三连接点与所述第二电极的几何中心电连接，所述第四连接点与所述射频电源电连接；所述第二电极的几何中心满足：从所述第二电极的几何中心到所述第二电极的边缘不同位置处的距离相同；
所述第一连接点到每个所述第二连接点的距离为所述第一距离，所述第四连接点到所述第三连接点的距离为所述第二距离。
于本申请的一实施例中，每个所述边缘部均呈条状，且沿所述中心部的径向设置；每个所述边缘部的一端与所述中心部连接，且电导通，每个所述边缘部的另一端上具有所述第二连接点。
于本申请的一实施例中，所述第二分配电极呈圆弧状，所述第三连接点 和所述第四连接点分别位于所述第二分配电极的两端。
于本申请的一实施例中，所述静电卡盘还包括滤波器和防短路电路，其中，所述第一分配电极和所述第二分配电极通过所述滤波器分别与所述直流电源的正极和负极电连接，且所述第一分配电极和所述第二分配电极均通过所述防短路电路与所述射频电源电连接；
所述滤波器用于避免所述射频电源干扰所述直流电源的工作；
所述防短路电路用于避免所述直流电源的正极和负极之间短路。
于本申请的一实施例中，所述防短路电路包括两条支路和设置在每条支路上的电容，其中，两条所述支路的一端分别连接在所述第一分配电极和所述第二分配电极分别与所述直流电源的正极和负极电连接的两条电路上；两条所述支路的另一端均与所述射频电源电连接。
第二个方面，本申请实施例提供了一种半导体工艺设备，包括工艺腔室、直流电源、射频电源及设置于所述工艺腔室内的如第一个方面提供的静电卡盘，所述直流电源和所述射频电源均与所述静电卡盘电连接。
本申请实施例提供的技术方案带来的有益技术效果是：
本申请实施例将射频电源和直流电源与电极组件电连接，该电极组件用于在直流电源加载直流功率时将待加工工件吸附于绝缘层上，以及在射频电源加载射频功率时，使到达绝缘层不同位置处的射频能量相同。这样，既可以实现对晶圆的吸附固定，又可以使射频电源提供的射频功率直接馈入到电极组件，且保证到达绝缘层不同位置处的射频能量相同，从而避免了现有技术中静电卡盘的多层结构之间电容差异对射频能量一致性的影响，从而大幅提高了晶圆工艺结果的一致性，进而提高了晶圆成品率。
本申请附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为本申请实施例提供的静电卡盘的一种结构示意图；
图2为本申请实施例提供的吸附电极的结构示意图；
图3为本申请实施例提供的第一分配电极的结构示意图；
图4为本申请实施例提供的第二分配电极的结构示意图；
图5为本申请实施例提供的静电卡盘的另一种结构示意图；
图6为本申请实施例提供的分配电极在陶瓷层中的一种布局示意图；
图7为本申请实施例提供的分配电极在陶瓷层中的另一种布局示意图。
具体实施方式
下面详细描述本申请，本申请的实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的部件或具有相同或类似功能的部件。此外，如果已知技术的详细描述对于示出的本申请的特征是不必要的，则将其省略。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能解释为对本申请的限制。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)，具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语，应该被理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样被特定定义，否则不会用理想化或过于正式的含义来解释。
下面以具体地实施例对本申请的技术方案以及本申请的技术方案如何解决上述技术问题进行详细说明。
本申请实施例提供了一种静电卡盘，用于设置在半导体工艺设备的工艺 腔室内，图1为本申请实施例提供的静电卡盘的结构示意图。如图1所示，静电卡盘1包括有用于承载晶圆(图中未示出)的绝缘层11和设置于绝缘层11内的电极组件2，其中，电极组件2与直流电源30和射频电源31电连接，用于在直流电源30加载直流功率时将晶圆吸附于绝缘层11上，以及在射频电源31加载射频功率时，使到达绝缘层11不同位置处的射频能量相同。
具体地，如图1所示，静电卡盘1可以包括自上至下依次设置的绝缘层11、加热层12及基座层13，其中，基座层13用于固定在工艺腔室(图中未示出)内，并支撑加热层12及绝缘层11；加热层12用于对绝缘层11进行加热，以实现对晶圆的温度控制；绝缘层11包括用于承载晶圆的承载面，该绝缘层11具体可以采用陶瓷材质制成，但是本申请实施例并不以此为限。
电极组件2例如设置于绝缘层11内，且位于承载面下方的一定距离处。在一些可选的实施例中，电极组件2可以通过线缆21与直流电源30电连接，并通过线缆21和线缆22与射频电源31电连接。当直流电源30通过线缆21向电极组件2加载直流功率时，电极组件2与置于绝缘层11上的晶圆产生静电引力，从而实现对晶圆的吸附固定；当射频电源31通过线缆22和线缆21向电极组件2加载射频功率时，可以在置于绝缘层11上的晶圆上产生射频偏压。而且，在射频电源31加载射频功率时，电极组件2能够使到达绝缘层11不同位置处的射频能量相同。由于射频电源31提供的射频功率直接馈入到电极组件2，且到达绝缘层11不同位置处的射频能量相同，这避免了现有技术中静电卡盘的多层结构之间电容差异对射频能量一致性的影响，从而大幅提高了晶圆工艺结果的一致性，进而提高了晶圆成品率。
于本申请的一实施例中，电极组件2包括吸附电极4和分配电极5，该吸附电极4通过分配电极5与直流电源30和射频电源31电连接；分配电极5用于将由直流电源30提供的直流电输送至吸附电极4，以及将由射频电源31提供的射频功率馈入至吸附电极4上，并且，吸附电极4的与分配电极5 电连接的连接点到吸附电极4的边缘不同位置处的距离相同。具体来说，吸附电极4上设置有射频馈入点(即，上述连接点)，该射频馈入点用于与分配电极5电连接，并且该射频馈入点在吸附电极4上的位置满足：自该射频馈入点到吸附电极4的边缘不同位置处的距离相同，这样，可以保证吸附电极4中的射频通路一致性，从而可以实现到达绝缘层11不同位置处的射频能量相同。
于本申请的一实施例中，如图2至图4所示，吸附电极4包括间隔设置的第一电极41和第二电极42；分配电极5包括间隔设置的
第一分配电极51和第二分配电极52，第一分配电极51与第一电极41电连接，第二分配电极52与第二电极42电连接；第一分配电极51和第二分配电极52分别与直流电源30的正极和负极电连接，且第一分配电极51和第二分配电极52均与射频电源31电连接。在这种情况下，第一电极41的与第一分配电极51电连接的连接点到第一电极41的边缘不同位置处的距离相同，以保证第一电极41中的射频通路一致性；第二电极42的与第二分配电极52电连接的连接点到第二电极42的边缘不同位置处的距离相同，以保证第二电极42中的射频通路一致性。第一分配电极51的与射频电源31电连接的连接点到与第一电极41电连接的连接点的距离为第一距离，第二分配电极52的与射频电源31电连接的连接点到与第二电极42电连接的连接点的距离为第二距离，该第一距离与第二距离相同，以保证第一电极41和第二电极42之间的射频通路的一致性。
上述第一分配电极51与直流电源30的正极电连接，而第二分配电极则与直流电源30的负极电连接，或者也可以将上述第一分配电极51与直流电源30的负极电连接，而第二分配电极则与直流电源30的正极电连接。
借助上述第一分配电极51和第二分配电极52，可以实现第一电极41和第二电极42与直流电源30电导通的同时，将由射频电源31提供的射频功 率向第一电极41及第二电极42馈入，该结构较为简单易于实现，并且可以避免第一电极41与第二电极42之间存在电磁干涉。
图5为本申请实施例提供的静电卡盘的另一种结构示意图。如图5所示，该静电卡盘是在图1示出的静电卡盘的基础上所做的改进，具体地，为了避免射频电源31影响直流电源30的工作，静电卡盘1还包括滤波器33和防短路电路，其中，第一分配电极51和第二分配电极52通过滤波器33分别与直流电源30的正极和负极电连接，且第一分配电极51和第二分配电极52均通过上述防短路电路与射频电源31电连接；滤波器33用于避免射频电源31影响直流电源30的工作，从而可以避免对电极组件2产生不良影响；该滤波器33可以设置在靠近直流电源30的位置处。防短路电路用于避免直流电源30的正极和负极之间短路。
在一些可选的实施例中，防短路电路包括两条支路(即，线缆22)和设置在每条支路(即，线缆22)上的电容32，其中，两条支路(即，线缆22)的一端分别连接在第一分配电极51和第二分配电极52分别与直流电源30的正极和负极电连接的两条电路(即，线缆21)上；两条支路(即，线缆22)的另一端均与射频电源31电连接。由于电容32具有隔直流通交流的特性，该电容32需能承受直流电源30的吸附电压以及射频电源31的射频电压和射频电流，工艺过程中吸附电压一般为±2000V(伏特)，射频电流一般为1-2A(安培)，因此该电容32需满足耐压2000V以上及耐电流2A以上，但是本申请实施例并不以此为限。
下面对第一电极41和第二电极42以及第一分配电极51和第二分配电极52的具体结构进行详细描述。具体地，如图2所示，第一电极41为多个，且形状相同，多个第一电极41位于同一平面，且相互间隔；第一分配电极51同时与多个第一电极41电连接，且不同的第一电极41的与第一分配电极51电连接的连接点位置相同。具体来说，每个第一电极41上均设置有射频 馈入点(即，上述连接点)，该射频馈入点用于与第一分配电极51电连接，不同的第一电极41上的射频馈入点的位置相同，以保证不同的第一电极41之间的射频通路一致性。
于本申请的一实施例中，多个第一电极41环绕第二电极42设置，且多个第一电极41各自在绝缘层11的承载面上的正投影面积均与第二电极42在绝缘层11的承载面上的正投影面积相同。这样，可以保证每个第一电极41与第二电极42之间的射频通路一致性。例如，如图2所示，第二电极42可以呈圆盘状，多个第一电极41在第二电极42的周围环绕形成环状，且第二电极42的中心与多个第一电极41围成的环状的中心重合。
在一个具体的实施例中，如图2所示，第二电极42为一个，且呈圆盘状；第一电极41为八个，并且多个第一电极41呈环状分布于第二电极42的周围，并且第一电极41在绝缘层11的承载面上的正投影面积与第二电极42在绝缘层11的承载面上的正投影面积相同，且第二电极42的中心与多个第一电极41围成的环状的中心重合，即第二电极42与多个第一电极41围成的环状同心设置。采用上述设计，使得本申请实施例的结构简单易于制造，从而大幅降低加工制造成本。
在实际应用中，可以利用直流电源30对第一电极41施加负电压，对第二电极42施加正电压，这样不仅可以避免对工艺腔室内的等离子体造成影响，而且还可以避免由于静电卡盘1与晶圆发生粘连导致损坏晶圆的现象，从而大幅提高工艺结果的均匀性及成品率。
于本申请的一实施例中，多个第一电极41之间电隔离，并且任意两个相邻的第一电极41之间具有间隙，该间隙可以设置为0.1mm-1mm。第一电极41与第二电极42之间同样电隔离，并且第一电极41与第二电极42之间具有间隙，该间隙需满足直流电源30的正、负极之间的耐电压要求，该间隙可以设置为0.1mm-3mm。
需要说明的是，本申请实施例并限定第一电极41及第二电极42的形状、数量及排布方式。本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
如图1和图2所示，多个第一电极41同层设置，即多个第一电极41位于绝缘层11内的同一水平面设置。第一电极41可以为形成于绝缘层11内的电极片，例如可以采用钨或铂制成，但是本申请实施例并不以此为限。第一分配电极51同样设置于绝缘层11内，并且位于第一电极41的下方。第一分配电极51同时与多个第一电极41电连接，用于将射频电源31提供的射频能量均匀分配至多个第一电极41上。通过将第一电极41设计为多个，可以缩小各第一电极41上的射频馈入点到边缘的距离，从而使得本申请实施不仅适用低频射频信号，并且还适用于高频射频信号。
具体来说，当前采用的射频信号一般为连续的正弦波，射频信号的波长公式为λ＝c/f，其中c为光速并且采用一定值，f为频率。低频射频信号的频率一般为2KHz(千赫兹)或者13.56MHz(兆赫兹)等，例如，对于常用的13.56MHz的低频射频信号，其波长为22米。高频射频信号的频率一般为50MHz-100MHz左右，射频周期一般为10ns-20ns，当射频周期为10ns时，频率为108Hz-100MHz，其波长为3m。
射频信号的频率越低，则波长越长；反之，射频信号的频率越高，则波长越短。而且，电极上的射频馈入点到边缘的距离越大，波形在电极上越容易发散，导致波形在该电极上的一致性较差，从而影响工艺结果。一般来说，如果电极上的射频馈入点到边缘的距离小于晶圆直径(例如300mm)，则可以保证波形在各第一电极41上不会过分发散。基于此，本申请实施例通过将第一电极41设计为多个，可以缩小各第一电极41上的射频馈入点到边缘的距离，使该距离远远小于晶圆直径，从而无论是低频射频信号还是高频射频信号，均可以保证波形在各第一电极41上不会过分发散，进而可以保证波形 在各第一电极41上的一致性，因此，本申请实施例不仅适用于低频射频信号，同样还适用于高频射频信号。
于本申请的一实施例中，如图3所示，第一分配电极51包括相互电导通的中心部和多个边缘部，其中，中心部的中心与第二电极42的中心在绝缘层11的承载面上的正投影重合，且中心部的中心上具有第一连接点512，该第一连接点512与射频电源31电连接；多个边缘部沿中心部的周向间隔分布，边缘部的数量与第一电极41的数量相同，且一一对应地设置，每个边缘部上具有第二连接点511，第二连接点511与对应的第一电极41的几何中心电连接，该第一电极41的几何中心满足：从第一电极41的几何中心到第一电极41的边缘不同位置处的距离相同。需要说明的是，在第二连接点511与各第一电极41的几何中心之间设置有连接部，以实现二者的电导通。该连接部例如为垂直连线，以缩短连接距离。
具体来说，第一分配电极51上设置有射频馈入点(即，上述第一连接点512)，该射频馈入点用于与射频电源31电连接，第一分配电极51上还设置有多个射频馈出点(即，上述第二连接点511)，各射频馈出点与各第一电极41的几何中心电连接，从而可以实现对于多个第一电极41的射频分配。
于本申请的一实施例中，如图3所示，每个边缘部均呈条状，且沿中心部的径向设置；每个边缘部的一端与中心部连接，且电导通，每个边缘部的另一端上具有上述第二连接点511。也就是说，多个条状的边缘部自中心部向四周呈辐射状分布。采用上述设计，通过将中心部相对于绝缘层11的轴心居中设置，可以使多个条状的边缘部相对于绝缘层11的轴心向四周呈辐射状分布，从而使得第一分配电极51本身对于绝缘层11影响的一致性较佳。需要说明的是，本申请实施例并不限定第一分配电极51的具体结构，本领域技术人员可以根据实际情况自行调整设置。
如图4所示，第二分配电极52上具有第三连接点521及第四连接点522， 其中，第三连接点521与第二电极42的几何中心电连接，，该第二电极42的几何中心满足：从第二电极42的几何中心到第一电极41的边缘不同位置处的距离相同。例如，第二电极42呈圆盘状，则第二电极42的几何中心为圆心。需要说明的是，在第二连接点511与各第二电极42的几何中心之间设置有连接部，以实现二者的电导通。该连接部例如为垂直连线，以缩短连接距离。
具体来说，第二分配电极52上设置有射频馈入点(即，上述第四连接点522)，该射频馈入点用于与射频电源31电连接，第二分配电极52上还设置有射频馈出点(即，上述第三连接点521)，射频馈出点与第二电极42的几何中心电连接，从而可以实现对于第二电极42的射频分配。
而且，第一分配电极51上的第一连接点512到每个第二连接点511的距离为第一距离，第四连接点522到第三连接点521的距离为第二距离。该第一距离等于第二距离，这样，可以使得射频自第一分配电极51的射频馈入至射频馈出的路径长度与自第二分配电极52的射频馈入至射频馈出的路径长度一致，从而可以保证第一电极41和第二电极42之间的射频通路的一致性。需要说明的是，上述第一距离和第二距离均是指射频自射频馈入点至射频馈出点的路径长度。
第一分配电极51和第二分配电极52通过采用上述设计，即可实现对多个第一电极41及第二电极42的射频分配，使得本申请实施例结构简单且易于实现。而且，由于第一分配电极51与第二分配电极52相互独立设计，进一步使得本申请实施例结构简单易用，从而大幅降低设计制造成本。
于本申请的一实施例中，如图4所示，第二分配电极52呈圆弧状，上述第三连接点521和第四连接点522分别位于第二分配电极52的两端。该圆弧在第三连接点521和第四连接点522之间的弧长即为上述第二距离。需要说明的是，本申请实施例并不限定第二分配电极52的具体结构，例如第二分 配电极52还可以采用其它曲线形状。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图6及图7所示，第一分配电极51及第二分配电极52可以为同层设置或者异层设置。具体来说，如图6所示，第一分配电极51及第二分配电极52可以设置于同一层，即两者在绝缘层11内位于同一水平面上，并且位于吸附电极4的下方，并且，第一分配电极51和第二分配电极52间隔设置，且两者之间具有0.1mm-3mm的间隙，以保证耐电压要求。采用上述设计，可以大幅减小绝缘层11的厚度，从而可以减小绝缘层11的占用空间，以满足对绝缘层11厚度有限制的场景。
需要说明的是，当第一分配电极51和第二分配电极52同层设置时，第一分配电极51上的第一连接点512例如可以位于第二电极42的几何中心的正下方，以保证第一分配电极51上的各个第二连接点511能够与各第一电极41的几何中心对应。在这种情况下，可以适应性地将第二分配电极52上的第三连接点521设置在略偏离第二电极42的几何中心正下方的位置处，由于该偏离量较小，不会影响射频馈入的均匀性，并可避免第一分配电极51和第二分配电极52的位置发生干涉。
如图7所示，第一分配电极51和第二分配电极52还可以异层设置，即两者在绝缘层11内分别位于两个高度不同的水平面上，并且位于吸附电极4的下方。由于第一分配电极51和第二分配电极52的高度差较小，即使异层设计，也不会影响射频馈入的均匀性。
而且，在第一分配电极51和第二分配电极52异层设置的情况下，可以使第二分配电极52高于第一分配电极51，这样，可以使第一分配电极51上的第一连接点512例如可以位于第二电极42的几何中心的正下方，以保证第一分配电极51上的各个第二连接点511能够与各第一电极41的几何中心对应；同时，第二分配电极52上的第三连接点521也可以位于第二电极42的 几何中心的正下方，而不会与第一分配电极51的位置发生干涉，从而可以保证第一分配电极51和第二分配电极52的射频馈入的均匀性。
基于同一发明构思，本申请实施例提供了一种半导体工艺设备，包括工艺腔室、直流电源、射频电源及设置于工艺腔室内的如上述各实施例提供的静电卡盘，直流电源和射频电源均与静电卡盘电连接。
应用本申请实施例，至少能够实现如下有益效果：
本申请实施例将射频电源和直流电源与电极组件电连接，该电极组件用于在直流电源加载直流功率时将待加工工件吸附于绝缘层上，以及在射频电源加载射频功率时，使到达绝缘层不同位置处的射频能量相同。这样，既可以实现对晶圆的吸附固定，又可以使射频电源提供的射频功率直接馈入到电极组件，且保证到达绝缘层不同位置处的射频能量相同，从而避免了现有技术中静电卡盘的多层结构之间电容差异对射频能量一致性的影响，从而大幅提高了晶圆工艺结果的一致性，进而提高了晶圆成品率。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。
在本申请的描述中，需要理解的是，术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描 述中，除非另有说明，“多个”的含义是两个或两个以上。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
在本说明书的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述仅是本申请的部分实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (12)

  1. 一种静电卡盘，用于设置在半导体工艺设备的工艺腔室内，其特征在于，所述静电卡盘包括用于承载晶圆的绝缘层和设置于所述绝缘层内的电极组件，其中，所述电极组件与直流电源和射频电源电连接，用于在所述直流电源加载直流功率时将所述晶圆吸附于所述绝缘层上，以及在所述射频电源加载射频功率时，使到达所述绝缘层不同位置处的射频能量相同。
  2. 如权利要求1所述的静电卡盘，其特征在于，所述电极组件包括吸附电极和分配电极，所述吸附电极通过所述分配电极与所述直流电源和所述射频电源电连接；并且，所述吸附电极的与所述分配电极电连接的连接点到所述吸附电极的边缘不同位置处的距离相同。
  3. 如权利要求2所述的静电卡盘，其特征在于，所述吸附电极包括间隔设置的第一电极和第二电极；所述分配电极包括间隔设置的第一分配电极和第二分配电极，所述第一分配电极与所述第一电极电连接，所述第二分配电极与所述第二电极电连接；并且，所述第一分配电极和所述第二分配电极分别与所述直流电源的正极和负极电连接，且所述第一分配电极和所述第二分配电极均与所述射频电源电连接；
    所述第一电极的与所述第一分配电极电连接的连接点到所述第一电极的边缘不同位置处的距离相同；所述第二电极的与所述第二分配电极电连接的连接点到所述第二电极的边缘不同位置处的距离相同；
    所述第一分配电极的与所述射频电源电连接的连接点到与所述第一电极电连接的连接点的距离为第一距离，所述第二分配电极的与所述射频电源电连接的连接点到与所述第二电极电连接的连接点的距离为第二距离，所述第一距离与所述第二距离相同。
  4. 如权利要求3所述的静电卡盘，其特征在于，所述第一电极为多个，且形状相同，多个所述第一电极位于同一平面，且相互间隔；所述第一分配电极同时与多个所述第一电极电连接，且不同的所述第一电极的与所述第一分配电极电连接的连接点位置相同。
  5. 如权利要求4所述的静电卡盘，其特征在于，多个所述第一电极环绕所述第二电极设置，且多个所述第一电极各自在所述绝缘层的承载面上的正投影面积均与所述第二电极在所述绝缘层的承载面上的正投影面积相同。
  6. 如权利要求5所述的静电卡盘，其特征在于，所述第二电极呈圆盘状，多个所述第一电极在所述第二电极的周围环绕形成环状，且所述第二电极的中心与多个所述第一电极围成的环状的中心重合。
  7. 如权利要求5或6所述的静电卡盘，其特征在于，所述第一分配电极包括相互电导通的中心部和多个边缘部，其中，所述中心部的中心与所述第二电极的中心在所述绝缘层的承载面上的正投影重合，且所述中心部的中心上具有第一连接点与所述射频电源电连接；多个所述边缘部沿所述中心部的周向间隔分布，所述边缘部的数量与所述第一电极的数量相同，且一一对应地设置，每个所述边缘部上具有第二连接点，所述第二连接点与对应的所述第一电极的几何中心电连接，所述第一电极的几何中心满足：从所述第一电极的几何中心到所述第一电极的边缘不同位置处的距离相同；
    所述第二分配电极上具有第三连接点和第四连接点，其中，所述第三连接点与所述第二电极的几何中心电连接，所述第四连接点与所述射频电源电连接；所述第二电极的几何中心满足：从所述第二电极的几何中心到所述第二电极的边缘不同位置处的距离相同；
    所述第一连接点到每个所述第二连接点的距离为所述第一距离，所述第四连接点到所述第三连接点的距离为所述第二距离。
  8. 如权利要求7所述的静电卡盘，其特征在于，每个所述边缘部均呈条状，且沿所述中心部的径向设置；每个所述边缘部的一端与所述中心部连接，且电导通，每个所述边缘部的另一端上具有所述第二连接点。
  9. 如权利要求7所述的静电卡盘，其特征在于，所述第二分配电极呈圆弧状，所述第三连接点和所述第四连接点分别位于所述第二分配电极的两端。
  10. 如权利要求3所述的静电卡盘，其特征在于，所述静电卡盘还包括滤波器和防短路电路，其中，所述第一分配电极和所述第二分配电极通过所述滤波器分别与所述直流电源的正极和负极电连接，且所述第一分配电极和所述第二分配电极均通过所述防短路电路与所述射频电源电连接；
    所述滤波器用于避免所述射频电源干扰所述直流电源的工作；
    所述防短路电路用于避免所述直流电源的正极和负极之间短路。
  11. 如权利要求10所述的静电卡盘，其特征在于，所述防短路电路包括两条支路和设置在每条支路上的电容，其中，两条所述支路的一端分别连接在所述第一分配电极和所述第二分配电极分别与所述直流电源的正极和负极电连接的两条电路上；两条所述支路的另一端均与所述射频电源电连接。
  12. 一种半导体工艺设备，其特征在于，包括工艺腔室、直流电源、射频电源及设置于所述工艺腔室内的如权利要求1至11的任一所述的静电卡盘，所述直流电源和所述射频电源均与所述静电卡盘电连接。
PCT/CN2021/125979 2020-10-28 2021-10-25 静电卡盘及半导体工艺设备 Ceased WO2022089342A1 (zh)

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