WO2022089181A1 - Substrat épitaxial de gan sur si comportant une couche intermédiaire de matériau 2d - Google Patents

Substrat épitaxial de gan sur si comportant une couche intermédiaire de matériau 2d Download PDF

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WO2022089181A1
WO2022089181A1 PCT/CN2021/122978 CN2021122978W WO2022089181A1 WO 2022089181 A1 WO2022089181 A1 WO 2022089181A1 CN 2021122978 W CN2021122978 W CN 2021122978W WO 2022089181 A1 WO2022089181 A1 WO 2022089181A1
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gan
layer
top layer
algan
epitaxial
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PCT/CN2021/122978
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王晓靁
施能泰
宋高梅
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王晓靁
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds

Definitions

  • the present invention relates to a gallium nitride on silicon GaN-on-Si epitaxial substrate with an intermediate layer of 2D material.
  • epitaxy has an important impact on the quality of products.
  • the impact on quality includes component performance, yield, reliability and life.
  • the material of the substrate hopes to minimize the defect density of the single crystal material, and the crystal structure, lattice constant (lattice constant), and coefficient of thermal expansion (CTE, coefficient of thermal expansion) match the epitaxial material to avoid as much as possible in the epitaxy process. affect crystal quality.
  • the third-generation semiconductor technology and market have developed rapidly with the demand for power and high-frequency semiconductor components. The basis for quality improvement depends on the supply of high-quality epitaxial substrates of silicon carbide and gallium nitride, the two main protagonists of the third-generation semiconductor materials.
  • the most commonly used GaN substrates are GaN-on-Si and GaN-on-SiC. on-SiC) two substrates.
  • the current GaN crystal growth method adopts the hydride vapor phase epitaxy (HVPE) method to produce single crystal gallium nitride substrates. Due to the limitations of production cost and yield conditions, the current mass production The technology reaches 4-inch substrates and the cost is extremely high.
  • HVPE hydride vapor phase epitaxy
  • the defect density of the above-mentioned vapor phase method is still higher than that of other liquid phase crystallization processes, but it is limited by the slow growth rate of the remaining processes and the higher cost of mass production. Under the consideration of compromise, the mainstream of commercial transformation is still limited to the HVPE method.
  • the literature points out that the vapor-phase GaN crystal growth rate is still possible to increase several times and maintain good crystallinity, but due to the deterioration of defect density, it has not been used as an orientation to reduce the cost of GaN substrates.
  • PVT physical vapor transport
  • one of the gas phase methods is used to produce single crystal aluminum nitride substrates.
  • SiC silicon carbide
  • SiC substrates are the current substrate materials for high-performance power semiconductors and high-end light-emitting diodes.
  • Transport, PVT high-quality large-size silicon carbide single crystal growth technology is difficult, high-end mass production technology is in the hands of a few manufacturers, and there is still a lot of room for improvement in the application cost.
  • Gallium nitride on silicon carbide is a high-quality GaN epitaxial substrate, but for the above reasons, large-scale substrates have problems such as high price, limited supply and technology in the hands of a few manufacturers; relatively In other words, due to the large size, low cost, high productivity and stable quality of silicon substrates, the development of gallium nitride (GaN-on-Si) substrates on silicon wafers is more commonly concerned by relevant manufacturers.
  • GaN-on-Si and GaN-on-SiC are both heterojunction epitaxy technologies in epitaxy process.
  • the higher quality of GaN-on-SiC than GaN-on-Si is precisely because of the GaN-on-SiC lattice
  • the degree of mismatch (lattice mismatch) is smaller than that of GaN-on-Si; another important feature is that the gallium nitride layer has significant tensile stress on the silicon surface.
  • Two-dimensional (2D) materials is a rapidly developing emerging field.
  • the earliest and most well-known material in the 2D material family that attracts a lot of R&D investment is graphene, whose two-dimensional layered structure has special or Excellent physical/chemical/mechanical/optical properties, there is no strong bond between layers, only van der Waals force, which also means that there is no dangling bond on the surface of the layered structure.
  • graphene has been It has been confirmed to have a wide range of excellent application potential; graphene research and development work is generally carried out around the world, and it also drives the research and development of more 2D materials, including hexagonal boron nitride hBN (hexagonal Boron Nitride), transition metal dichalcogenide TMDs (transition metal dichalcogenide TMDs (transition metal dichalcogenide) Metal dichalcogenides) and black phosphorus are also the ones who have accumulated more research and development achievements in the 2D material family.
  • Each of the above materials has specific material properties and application potential, and the manufacturing technology development of related materials is also actively promoted.
  • one of the TMDs materials are considered to have excellent diffusion barrier properties and varying degrees of high temperature stability.
  • hBN has excellent chemical passivation properties. Inertness and high temperature oxidation resistance.
  • van der Waals bonding characteristics of 2D materials have also attracted attention for the use of epitaxial substrates applied to traditional 3D materials. expansion) must be very well matched with the substrate material, but in reality, it often encounters situations such as the lack of suitable substrate materials for the subject of the present invention, or the ideal substrate material is expensive or difficult to obtain.
  • van der Waals Epitaxy Another solution, the so-called van der Waals Epitaxy.
  • the mechanism that van der Waals epitaxy may be beneficial to heteroepitaxy comes from the fact that the direct chemical bonds at the traditional epitaxy interface are replaced by van der Waals force bonding, which will relieve the stress or strain energy from the mismatch of lattice and thermal expansion in the epitaxy process to a certain extent.
  • the above-mentioned 2D layered material has a hexagon or honeycomb structure, and is considered to be structurally compatible with Wurtzite and Zinc-Blende structural materials in epitaxial time, and the related fields of the present invention are mainly Epitaxial materials belong to this type of structure.
  • single crystal is one of the requirements to ensure the quality of epitaxial crystals.
  • the growth of 2D materials tends to correlate with the crystal orientation of the crystalline substrate during the nucleation stage. It belongs to a polycrystalline structure, and the 2D material has already formed an inconsistent direction in the nucleation stage. After the nuclei aggregate into a continuous film with the growth, there are still domains with different orientations instead of single crystals; when the substrate is a single crystal material such as sapphire, it is still Due to the symmetry correlation between the two structures, the possible specific nucleation direction is not unique, and it is impossible to form a single crystal continuous film.
  • hBN is regarded as an excellent epitaxial substrate for transition metal dichalcogenides (transition metal dichalcogenides) materials.
  • the surface can be epitaxially grown with MoS 2 , WS 2 , MoSe 2 , WSe 2 and other TMD materials and maintain up to 95% of the surface area as a single crystal continuous film.
  • GaN-on-Si gallium nitride on silicon wafer
  • Heteroepitaxy needs to overcome the lattice matching problem between different materials, as well as the thermal stress problem caused by the different thermal expansion coefficients between the epitaxial layer and the substrate.
  • the GaN-on-Si lattice mismatch is relatively high, resulting in During the epitaxy process, the defect density of the gallium nitride layer is relatively high; another important feature is that the gallium nitride layer has significant tensile stress on the silicon surface.
  • the gallium nitride layer When the thickness of the gallium nitride layer is increased, the stress is higher, resulting in the bending deformation of the substrate or even nitriding The gallium layer may crack, and the associated effect becomes more severe as the wafer size increases. Relevant technical difficulties have led to the generally low yield of GaN-on-Si, and it is mostly used in power supply products. Currently, mass production is still dominated by six inches, and the advantages of large size of silicon wafers have not been fully utilized.
  • the present invention provides a gallium nitride-on-silicon GaN-on-Si epitaxial substrate with a 2D material intermediate layer.
  • the lattice constant of the top layer is highly matched with AlN, AlGaN or GaN; wherein, the lattice constant of the top layer is highly matched with GaN, and a GaN single crystal epitaxial layer is grown on the top layer of the 2D material ultra-thin interlayer by van der Waals epitaxy; or, the lattice constant of the top layer is The constant is highly matched with AlN or AlGaN, and the top layer of the 2D material ultra-thin interposer is grown with an AlGaN or AlN nucleation auxiliary layer by van der Waals epitaxy, and then has a GaN single crystal epitaxial layer on the AlGaN or AlN nucleation auxiliary layer.
  • the thickness of the 2D material ultra-thin interposer is greater than 0.5 nm.
  • the 2D material ultra-thin interposer is a 2D layer suitable for GaN, AlGaN or AlN epitaxy.
  • the 2D material ultra-thin interposer has a single-layer structure with only a top layer, and the top layer is a 2D material suitable for GaN, AlGaN or AlN epitaxy.
  • the 2D material ultra-thin interposer is a composite layer structure formed by a top layer and a bottom layer, the top layer is a 2D material suitable for AlN, AlGaN or GaN epitaxy, and the bottom layer is a 2D material suitable for a single crystal base layer.
  • the top layer adopts WS 2 or MoS 2 ; the bottom layer adopts hBN.
  • the single-layer structure or composite-layer structure of the 2D material ultra-thin interposer has a top lattice constant a that does not match AlN, AlGaN or GaN by more than 20% and is suitable for AlN, AlGaN or GaN epitaxy.
  • At least the top layer of the polycrystalline 2D material ultra-thin interposer is composed of two crystalline domains with matching directions at an angle of 60 degrees.
  • a silicon dioxide (SiO 2 ) layer is added between the surface of the monocrystalline silicon substrate and the polycrystalline 2D material ultra-thin interposer to improve the dielectric properties of the silicon substrate and improve the application performance of high-frequency components.
  • the present invention can firstly grow layers with good crystallinity on the c-plane sapphire surface of single crystal by means of the application of polycrystalline 2D material ultra-thin interposer and van der Waals epitaxy (VDWE).
  • VDWE van der Waals epitaxy
  • Two (0° and 60°) crystalline domains point to the polycrystalline 2D material layer; the 2D material layer is transferred to the surface of the single crystal silicon substrate to form a surface lattice constant that is highly matched to AlN, AlGaN and GaN.
  • the substrate can effectively overcome the defect quality problem of the gallium nitride layer caused by the mismatch of the heteroepitaxial lattice; the characteristics of the van der Waals junction can alleviate some of the thermal stress problems caused by different thermal expansion coefficients. Therefore, the substrate structure of the present invention is advantageous for growing high-quality GaN epitaxial layers for the fabrication of GaN-based and other wide-energy-gap optoelectronic and semiconductor components.
  • FIG. 1 is a schematic diagram of a gallium nitride (GaN-on-Si) structure on a silicon wafer in the prior art
  • FIG. 2 is a schematic structural diagram of Embodiment 1 of the present invention.
  • Embodiment 2 of the present invention is a schematic structural diagram of Embodiment 2 of the present invention.
  • Embodiment 3 of the present invention is a schematic structural diagram of Embodiment 3 of the present invention.
  • Embodiment 4 of the present invention is a schematic structural diagram of Embodiment 4 of the present invention.
  • FIG. 6 is a schematic structural diagram of Embodiment 5 of the present invention.
  • FIGS. 2 to 6 are several embodiments of the gallium nitride on silicon GaN-on-Si epitaxial substrate with a 2D material intermediate layer disclosed in the present invention.
  • the GaN-on-Si epitaxial substrate of gallium nitride on silicon with a 2D material intermediate layer includes a single crystal silicon wafer substrate 1; 2D material ultra-thin interposer, the polycrystalline 2D material ultra-thin interposer has only one top layer 21, that is, the 2D material ultra-thin interposer has a single-layer structure, and the top layer 21 is a 2D material suitable for GaN epitaxy,
  • the lattice constant of the top layer 21 is highly matched with GaN; a GaN single crystal epitaxial layer 3 is grown on the top layer 21 of the 2D material ultra-thin interposer by van der Waals epitaxy.
  • the 2D material ultra-thin interposer adopts a composite layer structure instead of a single-layer structure, that is, the 2D material ultra-thin interposer is formed by the top layer 21 and the bottom layer 22 .
  • the top layer 21 is a 2D material suitable for GaN epitaxy, the lattice constant of the top layer 21 is highly matched with GaN, and the bottom layer 22 is a 2D material suitable for use as a single crystal base layer; the top layer 21 of the ultra-thin interlayer of 2D material is made of van der Waals.
  • the GaN single crystal epitaxial layer 3 is epitaxially grown.
  • the GaN-on-Si epitaxial substrate of gallium nitride on silicon with a 2D material intermediate layer includes a single crystal silicon wafer substrate 1; 2D material ultra-thin interposer, the polycrystalline 2D material ultra-thin interposer has only one top layer 21, that is, the 2D material ultra-thin interposer has a single-layer structure, and the top layer 21 is a 2D material suitable for AlN or AlGaN epitaxy Material, the lattice constant of the top layer 21 is highly matched with AlN or AlGaN; the top layer 21 of the 2D material ultra-thin interlayer is grown with an AlGaN or AlN nucleation auxiliary layer 4 by van der Waals epitaxy, and then the AlGaN or AlN nucleation auxiliary layer 4 has a nucleation auxiliary layer 4.
  • GaN single crystal epitaxial layer 3 GaN single crystal epitaxial layer 3 .
  • the GaN-on-Si epitaxial substrate of gallium nitride on silicon with a 2D material intermediate layer includes a single crystal silicon wafer substrate 1; 2D material ultra-thin interposer, the 2D material ultra-thin interposer is a composite layer structure formed by a top layer 21 and a bottom layer 22, the top layer 21 is a 2D material suitable for AlN or AlGaN epitaxy, and the lattice constant of the top layer 21 is the same as that of AlN or AlGaN.
  • the bottom layer 22 is a 2D material suitable as a single crystal base layer; the top layer 21 of the 2D material ultra-thin interlayer is grown with an AlGaN or AlN nucleation auxiliary layer 4 by van der Waals epitaxy, and then on the AlGaN or AlN nucleation auxiliary layer 4 It has a GaN single crystal epitaxial layer 3 .
  • the fifth embodiment is different from the first embodiment in that a silicon dioxide (SiO 2 ) layer 5 is added between the surface 1 of the single crystal silicon substrate and the ultra-thin interposer of the polycrystalline 2D material, so as to Improve the dielectric properties of silicon substrates and improve the application performance of high-frequency components.
  • a silicon dioxide (SiO 2 ) layer 5 is covered on the silicon wafer substrate 1 , and a polycrystalline 2D material ultra-thin interposer is placed on the silicon dioxide (SiO 2 ) layer 5 .
  • the material ultra-thin interposer has only one top layer 21, that is, the 2D material ultra-thin interposer has a single-layer structure, the top layer 21 is a 2D material suitable for GaN epitaxy, and the lattice constant of the top layer 21 is highly matched with GaN; the 2D material is ultra-thin A GaN single crystal epitaxial layer 3 is grown on the top layer 21 of the interposer by van der Waals epitaxy.
  • a silicon dioxide (SiO 2 ) layer 5 can also be added between the surface 1 of the single crystal silicon substrate and the ultra-thin interposer of the polycrystalline 2D material in the second to fourth embodiments to improve the dielectric properties of the silicon substrate , to improve the application performance of high-frequency components.
  • This article does not illustrate one by one.
  • the optimal design of the 2D material ultra-thin interposer of the present invention is that the thickness is greater than 0.5 nm.
  • the 2D material ultra-thin interposer is a 2D layer suitable for GaN, AlGaN or AlN epitaxy.
  • the top layer 21 can be made of WS 2 or MoS 2 or the like; the bottom layer 22 can be made of hBN or the like.
  • the lattice constant a of the top layer 21 of the single-layer structure or the composite layer structure of the 2D material ultra-thin interposer does not match AlN, AlGaN or GaN by more than 20% and is suitable for AlN, AlGaN or GaN epitaxy.
  • At least the top layer 21 of the polycrystalline 2D material ultra-thin interposer is composed of two crystalline domains with matching directions at an angle of 60 degrees.
  • Step 1 using a silicon single crystal substrate (chip) that conforms to the epitaxial growth grade as the starting material, and undergoes appropriate pretreatment (including chip cleaning) as the preparation for the subsequent manufacturing process;
  • Step 2 growing a polycrystalline 2D material layer on the surface of the c-plane sapphire chip with an existing manufacturing process
  • Step 3 using the existing process to peel off the applicable 2D layer from the sapphire surface after growing, and transfer it to the surface of the silicon single crystal substrate;
  • step 4 using the van der Waals epitaxy technique, subsequent GaN epitaxy can be continued on the silicon single crystal substrate with the polycrystalline 2D material layer on the surface in step 3;

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention divulgue un substrat épitaxial de GaN sur Si comportant une couche intermédiaire de matériau 2D ; un interposeur ultra-mince de matériau 2D ayant une orientation polycristalline est disposé sur un substrat de tranche de silicium, et l'interposeur ultra-mince de matériau 2D comporte au moins une couche supérieure ; une constante de réseau supérieure est fortement adaptée à l'AlN, à l'AlGaN ou au GaN ; une couche épitaxiale monocristalline de GaN est développée sur la couche supérieure de l'interposeur ultra-mince de matériau 2D par une croissance épitaxiale de Van der Waals, ou une couche d'activateur de nucléation d'AlGaN ou d'AlN est développée sur la couche supérieure de l'interposeur ultra-mince de matériau 2D par une croissance épitaxiale de Van der Waals, la couche d'amélioration de nucléation comportant ainsi une couche épitaxiale monocristalline de GaN. La présente invention surmonte efficacement le problème de qualité de couches de GaN défectueuses provoqué par un défaut d'adaptation de réseau épitaxial hétérogène, atténue le problème de contrainte thermique provoqué en partie par la différence de coefficient de dilatation thermique, et est avantageuse pour une utilisation dans la croissance de couches épitaxiales de GaN de haute qualité pour la fabrication de composants photoélectriques et semi-conducteurs à large bande interdite à base de GaN.
PCT/CN2021/122978 2020-10-29 2021-10-11 Substrat épitaxial de gan sur si comportant une couche intermédiaire de matériau 2d WO2022089181A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115418718A (zh) * 2022-09-07 2022-12-02 武汉大学 基于二维尖晶石型铁氧体薄膜的产品及其制备方法和应用

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN212967721U (zh) * 2020-10-29 2021-04-13 王晓靁 具有2D材料中间层的硅上氮化镓GaN-on-Si外延基板

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JPH11224856A (ja) * 1998-02-05 1999-08-17 Sony Corp ＧａＮ系半導体の成長方法およびＧａＮ系半導体成長用基板
CN104637794A (zh) * 2015-01-27 2015-05-20 北京中科天顺信息技术有限公司 一种氮化物led垂直芯片结构及其制备方法
CN111009602A (zh) * 2020-01-03 2020-04-14 王晓靁 具有2d材料中介层的外延基板及制备方法和制作组件
WO2020192558A1 (fr) * 2019-03-28 2020-10-01 王晓靁 Del à base d'ingan multicolore rvb et son procédé de fabrication
CN212967721U (zh) * 2020-10-29 2021-04-13 王晓靁 具有2D材料中间层的硅上氮化镓GaN-on-Si外延基板

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JPH11224856A (ja) * 1998-02-05 1999-08-17 Sony Corp ＧａＮ系半導体の成長方法およびＧａＮ系半導体成長用基板
CN104637794A (zh) * 2015-01-27 2015-05-20 北京中科天顺信息技术有限公司 一种氮化物led垂直芯片结构及其制备方法
WO2020192558A1 (fr) * 2019-03-28 2020-10-01 王晓靁 Del à base d'ingan multicolore rvb et son procédé de fabrication
CN111009602A (zh) * 2020-01-03 2020-04-14 王晓靁 具有2d材料中介层的外延基板及制备方法和制作组件
CN212967721U (zh) * 2020-10-29 2021-04-13 王晓靁 具有2D材料中间层的硅上氮化镓GaN-on-Si外延基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115418718A (zh) * 2022-09-07 2022-12-02 武汉大学 基于二维尖晶石型铁氧体薄膜的产品及其制备方法和应用

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