JP2018509362A - 単結晶iiia族窒化物層を備える半導体ウェハ - Google Patents
単結晶iiia族窒化物層を備える半導体ウェハ Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 61
- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 27
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- 229910002601 GaN Inorganic materials 0.000 description 44
- 235000012431 wafers Nutrition 0.000 description 34
- CUOITRGULIVMPC-UHFFFAOYSA-N azanylidynescandium Chemical compound [Sc]#N CUOITRGULIVMPC-UHFFFAOYSA-N 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical group [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000002073 nanorod Substances 0.000 description 5
- 229910052706 scandium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 102100032912 CD44 antigen Human genes 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 108010069264 keratinocyte CD44 Proteins 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000004 low energy electron diffraction Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Abstract
Description
本発明は、本質的にシリコンからなる単結晶基板ウェハと、単結晶の主にIIIA族(IUPAC13族、ホウ素族元素)の窒化物層、特にInxAlzGa1-(x+z)N層(0≦x,z,(x+z)≦1)とを備える、半導体ウェハに関する。
単結晶窒化ガリウム(GaN)は、高出力および高周波用途のための発光ダイオード(LED)および電界効果トランジスタ(FET)を製造するための基板として、ますます重要になっている。基板の表面積は、製造プロセスの生産性の、したがってLEDまたはFETのコストの重要な問題である。高品質GaNエピ層の堆積は、本来のまたは密接に適合する基板の利用可能性によって妨げられる。
本発明の目的は、シリコン基板上に成長した低減された欠陥密度を有する単結晶質のIIIA族窒化物層を提供することである。
本発明の主題は、独立請求項による半導体ウェハおよびこのような半導体ウェハの製造方法である。
図面に、本質的にシリコンからなる単結晶基板ウェハと、IIIA族窒化物層として単結晶GaN層とを備える、本発明による半導体ウェハを製造するための好ましい実施形態が示される。
3)InxAlzGa1-(x+z)N層(0≦x,z,(x+z)≦1)の好ましい実施形態としてのGaN、IIIA族窒化物の好ましい実施形態として:たとえばELOによる機能的なGaNのパッチ
これにより、結果として得られる好ましいヘテロ構造は、Si/ScSix/ScN/GaNによって与えられる。IIIB族の化学的性質は、本明細書で議論される化合物の安定性のための良い指針を提供するAlの化学的性質と同様に作用することが留意される。
b)たとえばフッ化水素酸(HF)を用いた(ウェット)エッチング工程によって、または
c)たとえば水酸化カリウム(KOH)を用いた異方性(ウェット)エッチング工程によって
b)およびc)に示されるような覆われていない先端を有すると、GaN層の転位の偏向をもたらし、したがってより良い品質を提供し得る。実施例a)およびb)はより平坦な表面をもたらすが、実施例c)はSiO2のくぼみに埋め込まれたSiチップを有する粗い表面をもたらす。b)およびc)はたわみによる転位低減の利点を提供する。a)およびb)は、平面成長を提供するため有利である。c)は、潜在的な粗い表面または3D成長のために、特定の用途にとって望ましい可能性がある。
Claims (16)
- 本質的にシリコンからなる単結晶基板ウェハ(1)を備える半導体ウェハ(10)であって、
前記単結晶基板ウェハ(1)はその上面にチップ(3)を有するように構成され、
前記チップ(3)のそれぞれは、所定の順序でIIIB族ケイ化物層(5)およびIIIB族窒化物層(6)で覆われ、
前記IIIB族窒化物層(6)は単結晶IIIA族窒化物層(7,8)で覆われる、半導体ウェハ(10)。 - 前記IIIB族窒化物層(6)と前記単結晶IIIA族窒化物層(7,8)との間の接触面積は、合体された膜の場合には、成長した前記IIIA族窒化物層の50%以下である、請求項1に記載の半導体ウェハ(10)。
- 前記チップは、100nm〜50μm、好ましくは少なくとも3μmの高さを有する、請求項1または2に記載の半導体ウェハ(10)。
- 前記チップは、1nm〜10μmの底部幅を有する、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 前記チップは、100nm〜10μm、好ましくは最大3μmの中心間距離を有する、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 前記IIIB族窒化物層(6)は、(111)面配向を有し、および/もしくは、ScNまたはYNの単一層、またはScNおよびYNの二重層、または複数の混合あるいは段階的な層のY1-xScxN(0≦x≦1)のいずれかである、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 前記IIIB族ケイ化物層(5)は、(0001)面配向を有し、および/または、Y1-zSczSix層(0≦z≦1)である、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 前記単結晶IIIA族窒化物層(7,8)が、合体された膜、または特にロッド、ブロック、チップまたはピラミッドのア配列を備える構造化層である、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 前記単結晶IIIA族窒化物層(7,8)は、単結晶InxAlzGa1-(x+z)N層(0≦x,z,(x+z)≦1)である、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 前記単結晶IIIA族窒化物層(7,8)は、(0001)面配向を有する、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 前記単結晶基板ウェハ(1)はSi(111)ウェハまたはSi(001)ウェハである、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 前記IIIB族ケイ化物層(5)は5nm以上の厚さを有する、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)。
- 発光素子、電界効果トランジスタを製造するための基板、または微細構造プリントのための基板としての、前述の請求項の少なくとも一つに記載の半導体ウェハ(10)の使用。
- 特に前述の請求項の少なくとも一つに記載の半導体ウェハ(10)を製造する方法であって、
単結晶基板ウェハ(1)を提供するステップと、
前記単結晶基板ウェハ(1)を構造化して前記単結晶基板ウェハ(1)の上面の上にチップ(3)を形成するステップと、
IIIB族ケイ化物層(5)とIIIB族窒化物層(6)とで、所定の順序で、チップ(3)を覆うステップと、
単結晶質のIIIA族窒化物層(7,8)で、IIIB族窒化物層(6)を覆うステップとを含む、方法。 - IIIB族ケイ化物層(5)とIIIB族窒化物層(6)とで前記所定の順序で前記チップ(3)を覆う前記ステップは、ケイ化プロセスによって前記IIIB族ケイ化物層(5)を形成するステップを含む、請求項14に記載の方法。
- IIIB族ケイ化物層(5)とIIIB族窒化物層(6)とで前記所定の順序で前記チップ(3)を覆う前記ステップは、IIIB族窒化物表面の同時処理(in-situ)窒化、またはMBE技術によって、IIIB族ケイ化物の上面の上にIIIB窒化物を堆積するステップを含む、請求項14または請求項15に記載の方法。
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