WO2022083362A1 - 适用于大尺寸单晶硅片的制绒添加剂、制绒液及应用 - Google Patents

适用于大尺寸单晶硅片的制绒添加剂、制绒液及应用 Download PDF

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WO2022083362A1
WO2022083362A1 PCT/CN2021/118290 CN2021118290W WO2022083362A1 WO 2022083362 A1 WO2022083362 A1 WO 2022083362A1 CN 2021118290 W CN2021118290 W CN 2021118290W WO 2022083362 A1 WO2022083362 A1 WO 2022083362A1
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texturing
additive
solution
silicon wafers
nucleating agent
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PCT/CN2021/118290
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French (fr)
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周树伟
张丽娟
陈培良
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常州时创能源股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • the invention relates to a texturing additive, a texturing liquid and applications, in particular to a texturing additive, a texturing liquid and applications suitable for large-sized single crystal silicon wafers.
  • the size of silicon wafers increased from 100mm and 125mm to 156mm; from 2012 to 2018, the size of silicon wafers changed from M0 (margin 156mm) to M1 (margin 156.75mm), M2 (margin 156.75mm); 2018 So far, the silicon wafer size has changed to larger G1 (margin 158.75mm), M6 (margin 166mm), M12 (margin 210mm).
  • the driving force behind the increase in wafer size is fundamentally the dilution cost.
  • the rapid development of photovoltaic technology in recent years has played a key role in the continuous increase in the size of silicon wafers and cells.
  • Higher module power can be obtained by increasing the size, while increasing the production capacity of the manufacturing end and reducing the manufacturing cost. Large size has become the only way for the development of the photovoltaic industry.
  • the texturing additive is the most directly affected part.
  • the purpose of texturing is to create a "texture" on the surface of the native silicon wafer with high reflectivity to achieve the effect of trapping light, thereby increasing the absorption rate of sunlight, thereby improving the photoelectric conversion efficiency of the cell.
  • most of the additives used in the wet texturing process are developed on the basis of M2 silicon wafers. After only some improvements, it still cannot solve the main problem of customers using large-sized silicon wafers at the texturing end, that is, the reflectance inside the wafer after texturing.
  • the present invention proposes a texturing additive suitable for large-size silicon wafers, which can completely solve the problem of unevenness within the wafer after the large-size silicon wafers are textured.
  • the second object of the present invention is to propose a texturing liquid based on the above-mentioned texturing additive.
  • the third object of the present invention is to propose applications based on the above-mentioned texturing additives.
  • a texturing additive suitable for large-sized single crystal silicon wafers is composed of the following components by mass percentage: 0.5-10% of a main nucleating agent, 0.2-5% of a supplementary nucleating agent, and 0.01-0.1% of a branched dispersant %, defoaming agent 0.05-0.5%, and the balance is water.
  • the main nucleating agent is hydrolyzed polyacrylonitrile sodium salt
  • the supplementary nucleating agent is polyamino acid
  • the polyamino acid is selected from one or more of polyglutamic acid, polyaspartic acid, polylysine, polydiaminobutyric acid and polydiaminopropionic acid.
  • the branched dispersant is branched polyethyleneimine.
  • the defoaming agent is selected from one or more of dodecyltrimethylammonium chloride, cetyltrimethylammonium chloride and octadecyltrimethylammonium chloride.
  • the water is deionized water.
  • the present invention also provides a texturing liquid for single crystal texturing, comprising the above-mentioned texturing additive and an alkaline solution, wherein the mass ratio of the texturing additive and the alkaline solution is 0.25-2.5:100, and the alkaline solution is an inorganic alkaline solution. aqueous solution.
  • the alkali solution is 1-3wt% sodium hydroxide or potassium hydroxide aqueous solution.
  • the present invention also provides the application of the above-mentioned texturing additive, which is applied to the texturing of large-size monocrystalline silicon wafers, and specifically includes the following steps:
  • step (2) adding the texturing additive prepared in step (1) into the alkaline solution in proportion, and mixing evenly to prepare a texturing solution; wherein the mass ratio of the texturing additive to the alkaline solution is 0.25 to 2.5:100, and the alkaline solution is Aqueous solutions of inorganic bases;
  • step (3) Immerse the large-sized single crystal silicon wafer in the texturing solution obtained in step (2) to perform surface texturing to obtain a textured silicon wafer.
  • the main nucleating agent is hydrolyzed polyacrylonitrile sodium salt
  • the supplementary nucleating agent is polyamino acid
  • the branched dispersing agent is branched polyethyleneimine
  • the defoaming agent is The agent is selected from one or more of dodecyl trimethyl ammonium chloride, cetyl trimethyl ammonium chloride, octadecyl trimethyl ammonium chloride
  • the water is deionized water .
  • polyamino acid is selected from one or more of polyglutamic acid, polyaspartic acid, polylysine, polydiaminobutyric acid, and polydiaminopropionic acid.
  • the mass percentage content of the main nucleating agent is preferably 2.5-5%
  • the mass percentage content of the supplementary nucleating agent is preferably 0.7-1%
  • the mass percentage content of the branched dispersing agent is preferably 0.05-0.1%
  • the mass percentage content of the defoaming agent is preferably 0.1-0.2%.
  • the alkali solution is 1-3 wt % sodium hydroxide or potassium hydroxide aqueous solution.
  • step (3) the temperature of the surface texturing is 75-85° C., and the time is 5-8 min.
  • the temperature of the surface texturing is preferably 80°C.
  • the main nucleating agent hydrolyzed polyacrylonitrile sodium salt is an anionic polymer obtained by alkaline hydrolysis of polyacrylonitrile waste, and the molecular chain contains -CONH 2 , -COO- and -CN, etc.
  • branched polyethyleneimine has a long molecular chain due to its relatively large molecular weight, a special branched structure and a large number of amino groups on it, which have excellent dispersibility and are often used as dispersants, stability enhancers, Therefore, in the texturing system, the two compound nucleating agents can form uniform and stable nucleation points, so that the texturing agent can be more fully and uniformly distributed on the surface of the silicon wafer, thereby maintaining the pyramid length. It still has good uniformity after being large, which is unmatched by conventional dispersants. Therefore, the texturing additive of the present invention is used in the texturing system of large-sized silicon wafers, so that the reflectivity of the upper and lower parts of the silicon wafer after texturing can be very good. The uniformity of the silicon wafer after texturing improves the intra-wafer uniformity.
  • the defoaming agent is used to improve the appearance problem caused by the difference in the rate of bubble removal from the upper and lower parts of the large-size silicon wafer.
  • step (2) Add sodium hydroxide and deionized water to the texturing tank to prepare a 1wt% alkali solution, then add the texturing additive of step (1), stir evenly to prepare a texturing solution, wherein the texturing additive and the alkali solution The mass ratio of 0.7:100;
  • step (3) Put the M6 size single crystal silicon wafer into the texturing solution obtained in step (2) for texturing, and the texturing reaction is carried out at a temperature of 80° C. for 7 minutes to obtain a silicon wafer after texturing.
  • step (2) Add sodium hydroxide and deionized water to the texturing tank to prepare a 1.2wt% alkali solution, then add the texturing additive of step (1), stir evenly to prepare a texturing solution, wherein the texturing additive and alkali
  • the mass ratio of the solution is 0.7:100;
  • step (3) Put the single crystal silicon wafer of M6 size into the texturing solution obtained in step (2) for texturing, and the texturing reaction is carried out at a temperature of 80° C. for 5 minutes to obtain a silicon wafer after texturing.
  • step (2) Add sodium hydroxide and deionized water to the texturing tank to prepare a 1wt% alkali solution, then add the texturing additive of step (1), stir evenly to prepare a texturing solution, wherein the texturing additive and the alkali solution The mass ratio of 0.7:100;
  • step (3) Put the M6 size single crystal silicon wafer into the texturing solution obtained in step (2) for texturing, and the texturing reaction is carried out at a temperature of 80° C. for 7 minutes to obtain a silicon wafer after texturing.
  • the reflectivity of the silicon wafers after texturing prepared in Examples 1-3 and Comparative Examples was tested respectively, and the reflectivity instrument was NXT.
  • the Helios-rc reflectance tester measures the reflectance of the upper and lower positions corresponding to the front and back of the silicon wafer at a distance of 3 cm from the edge, and calculates the average reflectance of the front and back points respectively. The specific results are shown in Table 1.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

一种适用于大尺寸单晶硅片的制绒添加剂、制绒液及应用，所述制绒添加剂由如下质量百分比含量的组分组成：主成核剂0.5～10%，补充成核剂0.2~5%，支化分散剂0.01～0.1%，脱泡剂0.05～0.5%，余量为水。所述制绒液包括上述制绒添加剂和碱溶液。所述制绒添加剂应用于大尺寸单晶硅片的制绒。彻底解决了大尺寸硅片制绒后的片内不均匀问题；制绒反射率低、制绒时间短；制绒后硅片的片内反射率差异缩小至0.10～0.15%，优于商用制绒添加剂。

Description

适用于大尺寸单晶硅片的制绒添加剂、制绒液及应用 技术领域
本发明涉及制绒添加剂、制绒液及应用，尤其涉及适用于大尺寸单晶硅片的制绒添加剂、制绒液及应用。
 背景技术
由于半导体产业规模化发展早于光伏行业，并且光伏硅片与半导体硅片在技术方面本身就极为相似，在半导体硅片尺寸经历了从上世纪60年代的0.75英寸到现如今的12英寸以及即将换代的18英寸，因而源自于半导体硅片尺寸标准的光伏硅片经历了尺寸从小到大的三次变革。2012年以前，硅片尺寸从100mm、125mm增加到156mm；2012至2018年，硅片尺寸由M0（边距156mm）变革为M1（边距156.75mm）、M2（边距156.75mm）；2018年至今，硅片尺寸变革为更大的G1(边距158.75mm)、M6（边距166mm）、M12（边距210mm）。
硅片尺寸增大的驱动力根本上是摊薄成本。为了响应国家平价上网政策的要求，降低度电成本，提高行业竞争力，光伏近几年技术的快速发展，硅片及电池片的尺寸不断加大从中起到了关键的作用。通过尺寸增加得到更高的组件功率，同时提高制造端的产能，降低制造成本。大尺寸已经成为光伏行业发展的必经之路。
在电池片制造的过程中，受到硅片尺寸增加所带来影响的不仅仅是光伏设备，还有添加剂、银浆、网版等辅料，其中制绒添加剂是影响最为直接的部分。制绒的目的是在高反射率的原生硅片表面产生“织构”以达到陷光的作用，从而提高对太阳光的吸收率，进而提高电池片的光电转换效率。目前湿法制绒过程中使用的添加剂大部分在M2硅片的基础上开发所得，仅仅经过一些改良但还是无法解决使用大尺寸硅片客户在制绒端的主要问题，即制绒后片内反射率不均匀的现象。原本在M2硅片上，制绒后片内反射率的差异较小在0.2-0.3%左右，但是随着硅片尺寸增加至M6、M12，制绒后的同一硅片上下位置的反射率差异能达到0.5-0.6%甚至会有1%的差异，这对电池片的效率具有一定的影响。
 技术解决方案
发明目的：本发明提出一种适用于大尺寸硅片的制绒添加剂，能够彻底解决大尺寸硅片制绒后的片内不均匀问题。
本发明的第二个目的是提出一种基于上述制绒添加剂的制绒液。
本发明的第三个目的是提出基于上述制绒添加剂的应用。
技术方案：本发明采用如下技术方案：
一种适用于大尺寸单晶硅片的制绒添加剂，由如下质量百分比含量的组分组成：主成核剂0.5～10%，补充成核剂0.2~5%，支化分散剂0.01～0.1%，脱泡剂0.05～0.5%，余量为水。
优选的，所述主成核剂为水解聚丙烯腈钠盐，所述补充成核剂为聚氨基酸。
进一步优选的，所述聚氨基酸选自聚谷氨酸、聚天冬氨酸、聚赖氨酸、聚二氨基丁酸和聚二氨基丙酸中的一种或多种。
优选的，所述支化分散剂为支化聚乙烯亚胺。
优选的，所述脱泡剂选自十二烷基三甲基氯化铵、十六烷基三甲基氯化铵、十八烷基三甲基氯化铵中的一种或多种。
优选的，所述水为去离子水。
本发明还提供一种单晶制绒用制绒液，包括上述制绒添加剂和碱溶液，所述制绒添加剂和碱溶液的质量比为0.25～2.5:100，所述碱溶液为无机碱的水溶液。
优选的，所述碱溶液为1～3wt%的氢氧化钠或氢氧化钾水溶液。
本发明还提供上述制绒添加剂的应用，所述制绒添加剂应用于大尺寸单晶硅片的制绒，具体包括以下步骤：
（1）将质量百分含量为0.5～10%的主成核剂， 0.2~5%的补充成核剂，0.01～0.1%的支化分散剂，0.05～0.5%的脱泡剂加入到余量的水中，混合均匀配成制绒添加剂；
（2）将步骤（1）制成的制绒添加剂按比例加入到碱溶液中，混合均匀配成制绒液；其中制绒添加剂与碱溶液的质量比为0.25～2.5:100，碱溶液为无机碱的水溶液；
（3）将大尺寸单晶硅片浸入步骤（2）制得的制绒液中进行表面制绒，得制绒后硅片。
其中，步骤（1）中，所述主成核剂为水解聚丙烯腈钠盐，所述补充成核剂为聚氨基酸；所述支化分散剂为支化聚乙烯亚胺；所述脱泡剂选自十二烷基三甲基氯化铵、十六烷基三甲基氯化铵、十八烷基三甲基氯化铵中的一种或多种；所述水为去离子水。
进一步地，所述聚氨基酸选自聚谷氨酸，聚天冬氨酸，聚赖氨酸，聚二氨基丁酸，聚二氨基丙酸中的一种或多种。
进一步地，所述主成核剂的质量百分比含量优选2.5~5%，所述补充成核剂的质量百分比含量优选0.7～1%，所述支化分散剂的质量百分比含量优选0.05～0.1%，所述脱泡剂的质量百分比含量优选0.1～0.2%。
其中，步骤（2）中，所述碱溶液为1～3wt%的氢氧化钠或氢氧化钾水溶液。
其中，步骤（3）中，所述表面制绒的温度为75～85℃，时间为5～8min。
进一步地，所述表面制绒的温度优选80℃。
本发明的制绒添加剂中，主成核剂水解聚丙烯腈钠盐是由聚丙烯腈废料经碱性水解而得到的阴离子聚合物，分子链上含有-CONH 2、-COO-和-CN等强极性基团，与硅片表面的Si-H键形成强氢键作用，可以很好的吸附在硅片表面，产生丰富的形核点，因而具有良好的出绒性能；补充成核剂聚氨基酸的分子链上同时具有羧基和氨基这些强极性的基团，与硅片表面进一步结合的更好，产生更加稳定的形核点，从而与主成核剂水解聚丙烯腈钠盐复配之后具有补充出绒的效果，两者复配结合具有非常好的出绒性能，提高了出绒密度和改善出绒窗口的作用。
其中，支化聚乙烯亚胺由于较大分子量而具有的长分子链以及特殊的支化结构和其上带有的大量氨基基团，具有优异的分散性，常用作分散剂、稳定增强剂、表面活性剂、螯合剂等，因此在制绒体系中使得两种复配成核剂能够形成均匀稳定的形核点，使出绒剂能够更加充分均匀地分布在硅片表面，从而保持金字塔长大后仍具有良好的均匀性，这是常规分散剂所不能比拟的，因而本发明的制绒添加剂用在大尺寸硅片制绒体系，使得制绒后硅片上下部分的反射率达到很好的同一性，提高制绒后硅片的片内均匀性。
其中，脱泡剂用于改善由于大尺寸硅片上下部分气泡脱出速率不同带来的外观问题。
 有益效果
有益效果：与现有技术相比，本发明具有以下显著优点：
（1）彻底解决了大尺寸硅片制绒后的片内不均匀问题；
（2）制绒反射率低、制绒时间短；
（3）制绒后硅片的片内反射率差异缩小至0.10%～0.15%，优于商用制绒添加剂。
 本发明的最佳实施方式
下面结合实施例对本发明的技术方案作进一步的说明。
实施例1
（1）按照质量百分比，取2.5%的水解聚丙烯腈钠盐、0.5%的聚天冬氨酸、0.5%的聚二氨基丁酸、0.05%的支化聚乙烯亚胺、0.2%的十二烷基三甲基氯化铵与96.25%的去离子水混合，搅拌均匀配成制绒添加剂；
（2）制绒槽体加入氢氧化钠和去离子水，配成1wt%的碱溶液，再加入步骤（1）的制绒添加剂，搅拌均匀配成制绒液，其中制绒添加剂与碱溶液的质量比为0.7:100；
（3）将M6尺寸的单晶硅片投入步骤（2）制得的制绒液中进行制绒，温度80℃下制绒反应7min，得制绒后硅片。
实施例2
（1）按照质量百分比，取2.5%的水解聚丙烯腈钠盐、0.5%的聚天冬氨酸、0.5%的聚二氨基丁酸、0.05%的支化聚乙烯亚胺、0.2%的十二烷基三甲基氯化铵与96.25%的去离子水混合，搅拌均匀配成制绒添加剂；
（2）制绒槽体加入氢氧化钠和去离子水，配成1.2wt%的碱溶液，再加入步骤（1）的制绒添加剂，搅拌均匀配成制绒液，其中制绒添加剂与碱溶液的质量比为0.7:100；
（3）将M6尺寸的单晶硅片投入步骤（2）制得的制绒液中进行制绒，温度80℃下制绒反应5min，得制绒后硅片。
实施例3
（1）按照质量百分比，取5%的水解聚丙烯腈钠盐、0.5%的聚天冬氨酸、0.2%的聚谷氨酸、0.1%的支化聚乙烯亚胺、0.1%的十二烷基三甲基氯化铵与94.15%的去离子水混合，搅拌均匀配成制绒添加剂；
（2）制绒槽体加入氢氧化钠和去离子水，配成1wt%的碱溶液，再加入步骤（1）的制绒添加剂，搅拌均匀配成制绒液，其中制绒添加剂与碱溶液的质量比为0.7:100；
（3）将M6尺寸的单晶硅片投入步骤（2）制得的制绒液中进行制绒，温度80℃下制绒反应7min，得制绒后硅片。
对比例
在制绒槽体加入氢氧化钠和去离子水，配成1wt%的碱溶液，然后按照添加剂与碱溶液的质量比为0.7:100的比例加入商用制绒添加剂（常州时创能源股份有限公司生产，产品型号：TS50），搅拌均匀配成制绒液；将M6尺寸的单晶硅片投入制绒液中进行制绒，温度80℃下制绒反应7min，得制绒后硅片。
将实施例1-3及对比例所制得的制绒后硅片分别测试反射率，其中反射率仪器采用NXT Helios-rc反射率测试仪，测试硅片正反面对应的上下两处距离边缘3cm位置的反射率，分别计算正反两个点的平均反射率，具体结果见表一。
表一 实施例1-3及对比例制绒后硅片的平均反射率
组别 硅片上部位置 硅片下部位置
实施例1 10.56% 10.41%
实施例2 10.88% 10.79%
实施例3 10.47% 10.35%
对比例 12.03% 11.48%
从表一可以看出，本发明的制绒添加剂应用于大尺寸单晶硅片制绒时，制绒后硅片的上下部分反射率差异控制在0.10～0.15%，而常规制绒添加剂的片内反射率差异高达0.55%，说明本发明的制绒添加剂达到了良好的片内反射率均匀性，而且本发明的制绒添加剂使得制绒后硅片的平均反射率比常规添加剂降低了10%，保证绒面均匀性的同时进一步提高了电池的转换效率。

Claims (10)

  1. 一种适用于大尺寸单晶硅片的制绒添加剂，其特征在于：由如下质量百分比含量的组分组成：主成核剂0.5～10%，补充成核剂0.2~5%，支化分散剂0.01～0.1%，脱泡剂0.05～0.5%，余量为水。
  2. 根据权利要求1所述的一种适用于大尺寸单晶硅片的制绒添加剂，其特征在于：所述主成核剂为水解聚丙烯腈钠盐，所述补充成核剂为聚氨基酸。
  3. 根据权利要求2所述的一种适用于大尺寸单晶硅片的制绒添加剂，其特征在于：所述聚氨基酸选自聚谷氨酸、聚天冬氨酸、聚赖氨酸、聚二氨基丁酸和聚二氨基丙酸中的一种或多种。
  4. 根据权利要求1所述的一种适用于大尺寸单晶硅片的制绒添加剂，其特征在于：所述支化分散剂为支化聚乙烯亚胺。
  5. 根据权利要求1所述的一种适用于大尺寸单晶硅片的制绒添加剂，其特征在于：所述脱泡剂选自十二烷基三甲基氯化铵、十六烷基三甲基氯化铵、十八烷基三甲基氯化铵中的一种或多种。
  6. 根据权利要求1所述的一种适用于大尺寸单晶硅片的制绒添加剂，其特征在于：所述水为去离子水。
  7. 一种单晶制绒用制绒液，其特征在于：包括权利要求1-6中任一项所述的制绒添加剂和碱溶液，所述制绒添加剂和碱溶液的质量比为0.25～2.5:100，所述碱溶液为无机碱的水溶液。
  8. 根据权利要求7所述的单晶制绒用制绒液，其特征在于：所述碱溶液为1～3wt%的氢氧化钠或氢氧化钾水溶液。
  9. 一种适用于大尺寸单晶硅片的制绒添加剂的应用，其特征在于，所述制绒添加剂应用于大尺寸单晶硅片的制绒，具体包括以下步骤：
    （1）将质量百分含量为0.5～10%的主成核剂，0.2~5%的补充成核剂，0.01～0.1%的支化分散剂，0.05～0.5%的脱泡剂加入到余量的水中，混合均匀配成制绒添加剂；
    （2）将步骤（1）制成的制绒添加剂按比例加入到碱溶液中，混合均匀配成制绒液；其中制绒添加剂与碱溶液的质量比为0.25～2.5:100，碱溶液为无机碱的水溶液；
    （3）将大尺寸单晶硅片浸入步骤（2）制得的制绒液中进行表面制绒，得制绒后硅片。
  10. 根据权利要求9所述的制绒添加剂的应用，其特征在于：
    步骤（1）中，所述主成核剂为水解聚丙烯腈钠盐，所述补充成核剂为聚氨基酸；所述支化分散剂为支化聚乙烯亚胺；所述脱泡剂选自十二烷基三甲基氯化铵、十六烷基三甲基氯化铵、十八烷基三甲基氯化铵中的一种或多种；所述水为去离子水；
    步骤（2）中，所述碱溶液为1～3wt%的氢氧化钠或氢氧化钾水溶液；
    步骤（3）中，所述表面制绒的温度为75～85℃，时间为5～8min。
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