WO2022070880A1

WO2022070880A1 - Sputtering target-backing plate assembly, production method therefor, and sputtering target recovery method

Info

Publication number: WO2022070880A1
Application number: PCT/JP2021/033679
Authority: WO
Inventors: 智弘丸子; 雄鈴木; 将平大友; 紘暢中村
Original assignee: 株式会社フルヤ金属
Priority date: 2020-09-30
Filing date: 2021-09-14
Publication date: 2022-04-07
Also published as: TW202225434A

Abstract

The present disclosure provides a sputtering target-backing plate assembly in which, even in the case where a target having a low flexural strength is used or even in the case where the difference in linear expansion coefficient between a target and a backing plate is significantly large, the target can be inhibited from being damaged or detached, and from being tainted due to volatilization of impurities, and detachment and recovery of a target material can be facilitated while suppressing loss of a high-cost material used as the target material. In the assembly according to the present disclosure, one of a backing plate 1 and a sputtering target 2 has a hook-shaped portion 6, and the other has a hook-receiving portion 10. The hook-shaped portion and the hook-receiving portion abut each other. The hook-shaped portion or hook-receiving portion of the sputtering target 2 is provided on an outer circumferential lateral surface 9, and the sputtering target 2 is fixed to the backing plate 1 when the hook-shaped portion 6 abuts the hook-receiving portion 10.

Description

Sputtering target-backing plate joint, its manufacturing method and recovery method of sputtering target

The present disclosure relates to a suitable sputtering target-backing plate joint for installation in a sputtering apparatus used in a sputtering apparatus used in a manufacturing process of an HDD (hard disk drive), a semiconductor, etc., a method for manufacturing the same, and a method for recovering the sputtering target.

In order to install a sputtering target in a sputtering device used in a manufacturing process of HDDs, semiconductors, etc., a sputtering target-backing plate junction in which a sputtering target is bonded to a member called a backing plate is generally used. In the sputtering target-backing plate joint, by fixing the backing plate, the sputtering target is installed in the sputtering apparatus via the backing plate.

Since the backing plate is a member that supports the sputtering target and is a member that is responsible for cooling to suppress an increase in the temperature of the sputtering target due to exposure to plasma, heat of copper-based materials, aluminum-based materials, etc. It is made of a highly conductive material. In addition, the sputtering target and the backing plate must maintain close contact for heat conduction.

The bonding between the sputtering target and the backing plate is performed by using a bonding method generally called bonding, which uses a material having a low melting point and a low vapor pressure in vacuum such as indium or tin as an insert material, or a resin having conductivity. The method of joining is done.

However, if the temperature of the sputtering target rises above the melting point of indium or tin used as the insert material, indium or tin may volatilize and be mixed as impurities in the film formed, which is high. This is a fatal problem in applications where purity is required.

In order to solve the bonding problem, a technology that applies pressure facing the sputtering target and the backing plate without using a low melting point metal as an insert material and takes time to perform diffusion bonding while the temperature is high. (See, for example, Patent Documents 1 to 3).

In Patent Document 1, a material having a proof stress of 15 to ²⁰ kgf / mm ² , a proof stress of 15 to 20 kgf / mm, a proof stress of 15 to ²⁰ kgf / mm, and a backing plate having a proof stress equal to or higher than that of the sputtering target with respect to a sputtering target consisting of tantalum. It is disclosed that the direction of warpage of the sputtering target caused by thermal expansion and contraction is controlled by forming an assembly in which the sputtering target and the backing plate are diffusion-bonded.

In Patent Document 2, a target material having a melting point of 1000 ° C. or higher, one or more insert materials selected from a metal or alloy having a melting point lower than the melting point of the target material, and a backing plate are solid-phase diffusion bonded. It is disclosed that a high adhesion with a 100% bonding ratio and a high bonding strength can be obtained.

In Patent Document 3, after forming a sandwich structure in which the entire surface of the sputtering target is embedded, heat compression is applied to 400-600 ° C. by hot isostatic pressure compression (HIP) or uniaxial hot compression (UHP) for diffusion bonding. Then, a method of making an assembly by carving out a sputtering target and a backing plate is disclosed.

Japanese Unexamined Patent Publication No. 2015-183258 Japanese Unexamined Patent Publication No. 06-108246 Japanese Patent Publication No. 2014-511436

However, in the case of a sputtering target made of a material having a low bending strength as in the invention described in Patent Document 1, if the difference in linear expansion coefficient between the sputtering target and the backing plate is significantly different, diffusion bonding is performed at a high temperature. Sputtering targets can be damaged when cooled and thermally shrunk. Therefore, diffusion bonding may be performed at a low temperature, but diffusion bonding is not performed or sufficient strength cannot be obtained.

In addition, even if only diffusion bonding is performed between a sputtering target and a backing plate, which have significantly different differences in linear expansion coefficient, by heating and pressurizing, fatigue accumulates at the bonding interface when the temperature rises and falls repeatedly when the sputtering target is used. It may be destroyed and peeled off.

Further, in the invention described in Patent Document 2, when the temperature rises to the melting point of the insert material when the sputtering target is used, the insert material may be melted and the sputtering target may be peeled off. Such a tendency is likely to occur in semiconductor manufacturing where a large target is used and high purity is required.

In addition, there is a means to alleviate the stress such as inserting an insert material having a linear expansion coefficient near the middle between the sputtering target and the backing plate in order to alleviate the difference in the linear expansion coefficient. As with the case of joining using resin, the insert material volatilizes and the problem of contamination of impurities cannot be solved.

Further, in the invention described in Patent Document 3, since the sputtering target and the backing plate are performed until a strong diffusion bond is formed, the difference in linear expansion coefficient between the sputtering target and the backing plate is large, and the sputtering target has a large difference. Depending on the material, cracking of the sputtering target may occur in the diffusion bonding step of the sputtering target.

Therefore, it is an object of the present disclosure that damage or peeling of the sputtering target can be suppressed even when a sputtering target having a low bending strength is used or when the difference in linear expansion coefficient between the sputtering target and the backing plate is significantly different. In addition, a sputtering target-backing plate junction, which can suppress contamination due to volatilization of impurities and facilitate peeling and recovery of the target material while suppressing the loss of expensive materials used as the target material. It is to provide the manufacturing method and the recovery method of a sputtering target.

As a result of diligent studies, the present inventors provided either a hook-shaped portion or a hook-receiving portion on the backing plate, provided the hook-shaped portion or the other of the hook-receiving portions on the outer peripheral side surface of the sputtering target, and provided the hook-shaped portion. The present invention has been completed by finding that the above-mentioned problems can be solved by adopting a structure in which the sputtering target is fixed to the backing plate by contacting the hook receiving portion. That is, the sputtering target-backing plate joint according to the present invention is a sputtering target-backing plate joint in which a sputtering target is bonded to a backing plate, and the backing plate has a plate surface, a plate back surface, and a plate side surface. The sputtering target has a target surface, a target back surface facing the plate surface, and an outer peripheral side surface, and one of the backing plate and the sputtering target further has a hook-shaped portion. The other side further has a hook-shaped portion, and the hook-shaped portion and the hook-receiving portion are in contact with each other, and the hook-shaped portion or the hook-receiving portion of the sputtering target is provided on the outer peripheral side surface of the sputtering target. It is characterized in that the sputtering target is fixed to the backing plate by abutting the hook-shaped portion with the hook receiving portion.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the backing plate has a convex portion on the plate surface, and the convex portion has the hook-shaped portion or the hook receiving portion. In addition to improving the bonding strength between the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength between the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target, and as a result. , The bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the backing plate has a fastener on the plate surface or the side surface of the plate, and the fastener has the hook-shaped portion or the hook receiving portion. In addition to improving the bonding strength between the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength between the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target, and as a result. , The bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the fastener penetrates into the outer peripheral side surface leaving a part of the side surface, and the fastener is fixed to the backing plate. In addition to improving the bonding strength between the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength between the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target, and as a result. , The bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the side surface of the fastener protrudes from the outer peripheral side surface, and at least the protruding portion of the fastener is fixed to the backing plate. The fastener can be fixed to the backing plate even after the fastener is fixed to the outer peripheral side surface of the sputtering target.

In the sputtering target-backing plate joint according to the present invention, the backing plate has a recess in the plate surface, the backing plate has a fastener in the recess, and the fastener is the hook-shaped portion or the hook. It is preferable that the fastener has a receiving portion, at least a part of the sputtering target and at least a part of the fastener are fitted in the recess, and the fastener is fixed in the recess of the backing plate. The fastener can be fixed to the backing plate while adjusting the position of the fastener with respect to the plate surface of the backing plate.

In the sputtering target-backing plate joint according to the present invention, the backing plate has a recess on the plate surface, and the backing plate has the hook-shaped portion or the hook receiving portion on the inner peripheral side surface of the recess. It is preferable that a part of the sputtering target is fitted in the recess. In addition to improving the bonding strength between the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength between the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target, and as a result. , The bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good.

In the sputtering target-backing plate joint according to the present invention, the hook-shaped portion has a first uneven shape portion, and the hook receiving portion has a second uneven shape portion that matches the first uneven shape portion. Is preferable. In addition to improving the bonding strength between the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength between the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target, and as a result. , The bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good.

In the sputtering target-backing plate joint according to the present invention, the hook-shaped portion has a hook shape in which the tip of the hook in the direction from the backing plate to the sputtering surface is the maximum hooking point, and the hook receiving portion is the hook. It is preferable to have a hook hole that fits the shape. In addition to improving the bonding strength between the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength between the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target, and as a result. , The bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good.

The sputtering target-backing plate junction according to the present invention has an intermediate layer of 2.5 mm or less at the interface between the sputtering target and the backing plate, and the intermediate layer is at least one of Ni, Cr, Al, and Cu. It is preferably composed of a plate or powder made of one kind of metal or an alloy containing at least one of Ni, Cr, Al and Cu, or a combination of the plate material and the powder. By providing the intermediate layer, the bonding strength between the back surface of the target of the sputtering target and the plate surface or the bottom surface of the recess of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. Further, since the intermediate layer is covered with the backing plate and the sputtering target, it is possible to prevent the material of the intermediate layer from volatilizing and becoming impurities and adhering to the substrate.

The sputtering target-backing plate junction according to the present invention has an intermediate layer of 10 μm or less at the interface between the sputtering target and the backing plate, and the intermediate layer is at least one of Ni, Cr, Al, and Cu. It is preferably a thin film made of a metal or an alloy containing at least one of Ni, Cr, Al and Cu. By providing the intermediate layer, the bonding strength between the back surface of the target of the sputtering target and the plate surface or the bottom surface of the recess of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. Further, since the intermediate layer is covered with the backing plate and the sputtering target, it is possible to prevent the material of the intermediate layer from volatilizing and becoming impurities and adhering to the substrate.

The sputtering target-backing plate alloy according to the present invention has an intermediate layer of 1.0 mm or less at the interface between the sputtering target and the backing plate, and the intermediate layer is a metal of at least one of In and Zn, or It is preferably composed of a plate material or powder made of an alloy containing at least one of In and Zn, or a combination of the plate material and the powder. By providing the intermediate layer, the bonding strength between the back surface of the target of the sputtering target and the plate surface or the bottom surface of the recess of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. Further, since the intermediate layer is covered with the backing plate and the sputtering target, it is possible to prevent the material of the intermediate layer from volatilizing and becoming impurities and adhering to the substrate.

The sputtering target-backing plate alloy according to the present invention has two or more intermediate layers at the interface between the sputtering target and the backing plate, and the intermediate layers are Ni, Cr, Al, Cu of 2.5 mm or less. A plate or powder composed of at least one of the metals or an alloy containing at least one of Ni, Cr, Al and Cu, or a combination of the plate and the powder, and at least 10 μm or less of Ni, Cr, Al and Cu. A thin film made of any one metal or an alloy containing at least one of Ni, Cr, Al, and Cu, or at least one of In and Zn of 1.0 mm or less, or at least one of In and Zn. It is preferably composed of a plate material or powder made of an alloy containing one kind, or a combination of the plate material and the powder. By providing two or more intermediate layers, the bonding strength between the back surface of the target of the sputtering target and the plate surface or the bottom surface of the recess of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. Further, since the intermediate layer is covered with the backing plate and the sputtering target, it is possible to prevent the material of the intermediate layer from volatilizing and becoming impurities and adhering to the substrate.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the material of the sputtering target is an Al—Sc alloy, Ru, Ru alloy, Ir, or Ir alloy. Even with a high melting point material of 1000 ° C. or higher, the bonding strength between the sputtering target and the backing plate can be improved while suppressing warpage and cracking of the sputtering target.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the material of the sputtering target is Li-based oxide, Co-based oxide, Ti-based oxide or Mg-based oxide. Even with a high melting point material of 1000 ° C. or higher, the bonding strength between the sputtering target and the backing plate can be improved while suppressing warpage and cracking of the sputtering target.

In the sputtering target-backing plate joint according to the present invention, the material of the backing plate is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the linear expansion coefficient of the backing plate is 30.0 × 10 ⁻ . It is preferably ⁶ / ° C. or lower. By using a backing plate with good thermal conductivity, the backing plate expands during heating, and the sputtering target can be inserted into the inner peripheral side surface of the convex or concave portion of the backing plate, and the backing plate can be inserted during cooling. Shrinks, and the inner peripheral side surface of the convex or concave portion of the backing plate is brought into contact with the outer peripheral side surface of the sputtering target to form a bonded body.

The method for manufacturing a sputtering target-backing plate joint according to the present invention includes a backing plate having a plate surface, a plate back surface, a plate side surface, and either a hook-shaped portion or a hook receiving portion, and a target surface and a target back surface. Step 1 of preparing a sputtering target having the outer peripheral side surface and the hook-shaped portion or the other of the hook receiving portion provided on the outer peripheral side surface, step 2 of heating and thermally expanding the backing plate, and the plate surface. Step 3 of arranging the sputtering target and the backing plate so that the back surface of the target and the back surface of the target face each other and the hook receiving portion and the hook-shaped portion face each other, and the sputtering. It is characterized by having a step 4 of fixing the sputtering target to the backing plate by cooling the target and the backing plate and bringing the hook-shaped portion into contact with the hook receiving portion. A sputtering target-backing plate joint can be easily manufactured by abutting the hook-shaped portion and the hook receiving portion by utilizing thermal expansion and contraction.

In the method for manufacturing a sputtering target-backing plate joint according to the present invention, the sputtering target and the backing plate are cooled and the hook-shaped portion is brought into contact with the hook receiving portion to bring the sputtering target into contact with the hook-shaped portion. After the step 4 of fixing to the backing plate, pressing the sputtering target from the target surface to the backing plate or heating the sputtering target and the backing plate and pressing the sputtering target from the target surface to the backing plate. It is preferable that the step and the step of cooling the sputtering target and the backing plate are performed once as a set or repeated two or more times. While suppressing the warp of the sputtering target, the bonding strength between the back surface of the target of the sputtering target and the plate surface or the bottom surface of the recess of the backing plate can be further improved, the adhesion can be improved, and heat conduction can be efficiently performed. ..

The sputtering target-backing plate joint according to the present invention includes a backing plate having a plate surface, a plate back surface, and a plate side surface, a fastener having either a hook-shaped portion or a hook receiving portion, and a target surface and a target back surface. The step 1 of preparing a sputtering target having the hook-shaped portion or the other of the hook receiving portion on the outer peripheral side surface and the outer peripheral side surface, and the sputtering target so that the plate surface and the back surface of the target face each other. And the step 2 of arranging the backing plate, and the sputtering target so that the fastener is arranged on the plate surface or the plate side surface and the hook receiving portion and the hook-shaped portion face each other. It is characterized by having a step 3 of arranging the fastener and the step 4 of fixing the fastener to the backing plate in the arranged state of the step 3. By providing the hook-shaped portion or the hook receiving portion on the fastener, the hook-shaped portion and the hook receiving portion can be easily brought into contact with each other, and a sputtering target-backing plate joint can be easily manufactured.

In the method for manufacturing a sputtering target-backing plate joint according to the present invention, after the step 4 of fixing the fastener to the backing plate in the arrangement state of the step 3, the target surface of the sputtering target is transferred to the backing plate. The step of pressing or heating the sputtering target and the backing plate, pressing the sputtering target from the target surface to the backing plate, and cooling the sputtering target and the backing plate are performed once as a set. Alternatively, it is preferable to repeat the process twice or more. While suppressing the warp of the sputtering target, the bonding strength between the back surface of the target of the sputtering target and the plate surface or the bottom surface of the recess of the backing plate can be further improved, the adhesion can be improved, and heat conduction can be efficiently performed. ..

The method for recovering a sputtering target according to the present invention includes a step A in which the sputtering target-backing plate joint according to the present invention is heated and thermally expanded until the hook-shaped portion is separated from the hook receiving portion, and the sputtering target is described above. It is characterized by having a step B of removing the sputtering target from the backing plate and recovering the sputtering target from the sputtering target-backing plate joint.

The method for recovering a sputtering target according to the present invention is a method for recovering the sputtering target from a sputtering target-backing plate joint in which the sputtering target is fixed to the backing plate by a fastener, and the fastener is fixed to the backing plate. It is characterized by having a step C of removing the fastener from the backing plate and recovering the sputtering target from the sputtering target-backing plate joint.

The present disclosure can suppress breakage and peeling of a sputtering target even when a sputtering target having a low bending strength is used or when the difference in linear expansion coefficient between the sputtering target and the backing plate is significantly different, and impurities are present. Sputtering target-backing plate junction, its manufacturing method and capable of suppressing the contamination due to volatilization of the target material and facilitating the peeling recovery of the target material while suppressing the loss of the expensive material used as the target material. A method for recovering a sputtering target can be provided.

It is a plan view of the disk-shaped sputtering target-backing plate joint body which concerns on this embodiment. FIG. 1 is a schematic cross-sectional view taken along the line AA of the first example of FIG. 1, showing the form 1-1. It is a schematic diagram of another form (1) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (2) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (3) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (4) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (5) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (6) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (7) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (8) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (9) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (10) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (11) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (12) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (13) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (14) of the part surrounded by the broken line of FIG. It is a plan view of the rectangular plate-shaped sputtering target-backing plate joint body which concerns on this embodiment. It is a plan view of the disk-shaped sputtering target-backing plate joint of another embodiment which concerns on this embodiment. FIG. 4 is a schematic cross-sectional view taken along the line AA of the first example of FIG. 4, showing the form 1-2. It is a schematic diagram of another form (1) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (2) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (3) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (4) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (5) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (6) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (7) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (8) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (9) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (10) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (11) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (12) of the part surrounded by the broken line of FIG. It is a plan view of the rectangular plate-shaped sputtering target-backing plate joint of another embodiment which concerns on this embodiment. FIG. 3 is a schematic cross-sectional view of Form 2-1. It is a schematic diagram of another form (1) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (2) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (3) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (4) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (5) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (6) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (7) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (8) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (9) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (10) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (11) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (12) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (13) of the part surrounded by the broken line of FIG. 7. It is a schematic diagram of another form (14) of the part surrounded by the broken line of FIG. 7. FIG. 3 is a schematic cross-sectional view of Form 3-1. It is a schematic diagram of another form (1) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (2) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (3) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (4) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (5) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (6) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (7) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (8) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (9) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (10) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (11) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (12) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (13) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (14) of the part surrounded by the broken line of FIG. FIG. 3 is a schematic cross-sectional view of Form 4-1. It is a schematic diagram of another form (1) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (2) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (3) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (4) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (5) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (6) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (7) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (8) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (9) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (10) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (11) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (12) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (13) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (14) of the part surrounded by the broken line of FIG. FIG. 5 is a schematic cross-sectional view of Form 5-1. It is a schematic diagram of another form (1) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (2) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (3) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (4) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (5) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (6) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (7) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (8) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (9) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (10) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (11) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (12) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (13) of the part surrounded by the broken line of FIG. It is a schematic diagram of another form (14) of the part surrounded by the broken line of FIG. 6 is a schematic cross-sectional view of Form 6-1 and Form 7-1 or Form 8-1. 6-2 is a schematic cross-sectional view of Form 6-2, Form 7-2, or Form 8-2. It is sectional drawing of the form 9-1. It is sectional drawing of the form 9-2. It is a schematic process diagram for demonstrating the first example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the 2nd example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the 3rd example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the 4th example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the 5th example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the sixth example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the 7th example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the 8th example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the 9th example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the tenth example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is a schematic process diagram for demonstrating the eleventh example of the manufacturing method of the sputtering target-backing plate joint which concerns on this embodiment. It is an image which shows the contact part in Example 1. FIG. It is an image which shows the joining result in the comparative example 1. It is an image which shows the joining result in the comparative example 2. It is an image which shows the joining result in the comparative example 3. It is an image which shows the joining result in the comparative example 4.

Hereinafter, the present invention will be described in detail by showing embodiments, but the present invention is not construed as being limited to these descriptions. The embodiments may be modified in various ways as long as the effects of the present invention are exhibited. In the figure, in each of the joints, the parts having the same name are designated by the same reference numerals regardless of the shape.

<Sputtering target-backing plate joint>
(Form 1-1: The backing plate has a hook-shaped portion, and the sputtering target has a hook receiving portion)
The sputtering target-backing plate junction according to the present embodiment will be described with reference to FIGS. 1 and 2. The sputtering target-backing plate joint 100 according to the present embodiment is a sputtering target-backing plate joint in which the sputtering target 2 is bonded to the backing plate 1, and the backing plate 1 has a plate surface 3 and a plate back surface 4. The plate side surface 5 is provided, the sputtering target 2 has a target surface 7, a target back surface 8 facing the plate surface 3, and an outer peripheral side surface 9, and the backing plate 1 and the sputtering target 2 are backing plates 1. Further has a hook-shaped portion 6, the sputtering target 2 further has a hook receiving portion 10, and the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other. The sputtering target 2 is fixed to the backing plate 1 by being provided on the outer peripheral side surface 9 of the sputtering target 2 and the hook-shaped portion 6 abuts on the hook receiving portion 10. When the hook-shaped portion 6 is in contact with the hook receiving portion 10, the sputtering target 2 is fixed to the side surface direction of the plate surface 3 of the backing plate 1, and the sputtering target 2 is fixed in the thickness direction of the plate surface 3 of the backing plate 1. On the other hand, the sputtering target 2 can be fixed.

In the form shown in FIGS. 1 and 2, the backing plate 1 has a convex portion 13 on the plate surface 3, and the convex portion 13 has a hook-shaped portion 6. The backing plate 1 is cut to form the convex portion 13 and the hook-shaped portion 6 is formed inside the convex portion 13. Since the hook-shaped portion 6 is integrated with the backing plate 1, the sputtering target 2 can be fixed.

Regarding the hook-shaped portion 6 and the hook receiving portion 10 in FIG. 2, it is preferable that the hook-shaped portion 6 and the hook receiving portion 10 are brought into contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2. In FIG. 1, the annularly shaded portion indicates the top surface of the convex portion 13 provided on the plate surface 3 of the backing plate 1, indicating that the convex portion 13 covers the outer peripheral shape of the sputtering target 2 over the entire circumference. ing. However, when damage or peeling of the sputtering target 2 can be suppressed and contamination due to volatilization of impurities can be suppressed, two or more hook-shaped portions 6 and hook receiving portions 10 may be partially formed and brought into contact with each other.

The hook-shaped portion 6 and the hook receiving portion 10 in FIG. 2 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 2 (A) to 2 (N).

Further, if the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other, the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured, but in addition to the bonding strength, the backing plate 1 and the sputtering target 2 are in close contact with each other. When the property is required, it is preferable that when the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other, the hook-shaped portion 6 is pressed toward the hook receiving portion 10.

1 and 2 show a form in which a disk-shaped sputtering target 2 is joined to a disk-shaped backing plate 1. However, as shown in FIG. 3, a rectangular sputtering target 2 is attached to a rectangular backing plate 1. May be in the form of being joined. The BB cross section has the same shape as the AA cross section shown in FIG. Further, the rectangular shape includes a square shape. Also in FIG. 3, the annularly shaded portion indicates the top surface of the convex portion 13 provided on the plate surface 3 of the backing plate 1.

(Form 1-2: The backing plate has a hook receiving portion, and the sputtering target has a hook-shaped portion)
Another embodiment of the sputtering target-backing plate junction according to the present embodiment will be described with reference to FIGS. 4 and 5. The sputtering target-backing plate joint 101 according to the present embodiment is a sputtering target-backing plate joint in which the sputtering target 2 is bonded to the backing plate 1, and the backing plate 1 has a plate surface 3 and a plate back surface 4. The plate side surface 5 is provided, the sputtering target 2 has a target surface 7, a target back surface 8 facing the plate surface 3, and an outer peripheral side surface 9, and the backing plate 1 and the sputtering target 2 are backing plates 1. Further has a hook-shaped portion 10, the sputtering target 2 further has a hook-shaped portion 6, and the hook-shaped portion 6 and the hook-shaped portion 10 are in contact with each other. The sputtering target 2 is fixed to the backing plate 1 by being provided on the outer peripheral side surface 9 of the sputtering target 2 and the hook-shaped portion 6 abuts on the hook receiving portion 10. When the hook-shaped portion 6 abuts on the hook receiving portion 10, the sputtering target 2 is fixed to the side surface direction of the plate surface 3 of the backing plate 1, and the sputtering target 2 is fixed to the thickness direction of the plate surface 3 of the backing plate 1. The sputtering target 2 can be fixed.

In the form shown in FIGS. 4 and 5, the backing plate 1 has a convex portion 13 on the plate surface 3, and the convex portion 13 has a hook receiving portion 10. The backing plate 1 is cut to form the convex portion 13, and the hook receiving portion 10 is formed inside the convex portion 13. Since the hook receiving portion 10 is integrated with the backing plate 1, the sputtering target 2 can be fixed.

Regarding the hook-shaped portion 6 and the hook receiving portion 10 in FIG. 5, it is preferable that the hook-shaped portion 6 and the hook receiving portion 10 are brought into contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2, but the sputtering target 2 is damaged or peeled off. However, when the contamination due to the volatilization of impurities can be suppressed, two or more hook-shaped portions 6 and the hook receiving portions 10 may be partially formed and brought into contact with each other.

The hook-shaped portion 6 and the hook receiving portion 10 in FIG. 5 may be brought into contact with each other by using the form of the hook-shaped portion and the hook receiving portion shown in FIGS. 5A to 5L.

Further, if the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other, the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured, but in addition to the bonding strength, the backing plate 1 and the sputtering target 2 are in close contact with each other. When the property is required, it is preferable that when the hook-shaped portion 6 and the hook-shaped portion 10 are in contact with each other, the hook-shaped portion 10 is pressed toward the hook-shaped portion 6.

4 and 5 show a form in which the disk-shaped sputtering target 2 is joined to the disk-shaped backing plate 1, but as shown in FIG. 6, the rectangular sputtering target 2 is attached to the rectangular backing plate 1. May be in the form of being joined. The BB cross section has the same shape as the AA cross section shown in FIG. Further, the rectangular shape includes a square shape. In FIG. 6, the annularly shaded portion indicates the top surface of the convex portion 13 provided on the plate surface 3 of the backing plate 1.

Hereinafter, the present embodiment will be further described while showing various schematic cross-sectional views of the sputtering target-backing plate joint. The sputtering target-backing plate joint may be in the shape of a disk, a rectangular plate, or a square plate.

(Form 2-1: The backing plate has a fastener, and the fastener has a hook-shaped portion)
As shown in FIG. 7, in the sputtering target-backing plate joint 200 according to the present embodiment, it is preferable that the backing plate 1 has a fastener 14 and the fastener 14 has a hook-shaped portion 6. The sputtering target 2 has a hook receiving portion 10, and the hook-shaped portion 6 is in contact with the hook receiving portion 10. In the form 1-1, the backing plate 1 has the convex portion 13 on the plate surface 3, and the convex portion 13 has the hook-shaped portion 6, whereas in the form 2-1 the convex portion 13 is replaced. Has a fastener 14. Since the backing plate 1 has the fastener 14, the fastener 14 plays the same role as the convex portion 13. Since the backing plate 1 has the fastener 14, the processing can be facilitated and the assembly of the joint can be facilitated. As shown in FIG. 7, in the sputtering target-backing plate joint 200 according to the present embodiment, the side surface of the fastener 14 protrudes from the outer peripheral side surface 9, and at least the protruding portion of the fastener 14 is fixed to the backing plate 1. It is preferable that it is. The difference from the form shown in FIG. 2 is that a fastener is prepared separately from the backing plate 1 and the sputtering target 2, a hook-shaped portion 6 is formed on the side of the fastener in contact with the sputtering target 2, and the outer peripheral side surface of the sputtering target 2 is formed. A hook receiving portion 10 is formed in 9, and the hook-shaped portion 6 of the fastener 14 and the hook receiving portion 10 of the sputtering target 2 are brought into contact with each other. The sputtering target 2 can be fixed to the backing plate 1 by fixing toward. For fixing, for example, it is fixed by screwing at the screwing point 11. With such a structure, the outside of the hook-shaped portion 6 of the backing plate 1 is located outside the outer peripheral side surface 9 of the sputtering target 2, and the hook-shaped portion 6 is in contact with the hook receiving portion 10. The sputtering target 2 can be fixed to the side surface direction of the plate surface 3 of the backing plate 1, and the sputtering target 2 can be fixed to the thickness direction of the plate surface 3 of the backing plate 1. The fastener 14 may be fixed to the backing plate 1 by a joining means such as diffusion joining or welding, in addition to fixing by screwing. FIG. 7 shows a form in which the fastener 14 is fixed to the plate surface 3 of the backing plate 1 by screwing at the screwed portion 11, but not only on the plate surface 3 but also on the side surface or the back surface of the backing plate 1. It may be fixed.

In the form shown in FIG. 7, the hook-shaped portion 6 and the hook receiving portion 10 can be brought into contact with each other in the same manner as in the form shown in FIG. 2, but the structure may be further as follows.
(1) It is preferable that the hook-shaped portion 6 and the hook receiving portion 10 are brought into contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2, but two or more hook-shaped portions 6 and the hook receiving portion 10 are partially formed. It may be brought into contact.
(2) The hook-shaped portion 6 and the hook receiving portion 10 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 7 (A) to 7 (N) and the like.
(3) When adhesion between the backing plate 1 and the sputtering target 2 is required in addition to the joining strength, when the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other, the hook-shaped portion 6 is transferred to the hook receiving portion 10. You may press it toward it.

(Form 2-2: The backing plate has a fastener, and the fastener has a hook receiving portion)
In the same way as the relationship between the form 1-1 and the form 1-2, that is, the arrangement of the hook-shaped portion and the hook receiving portion is reversed, in the form 2-1 the hook-shaped portion 6 and the hook receiving portion 10 The arrangement with and may be reversed (not shown).

(Form 3-1: The backing plate has a fastener, and the fastener has a hook-shaped portion)
As shown in FIG. 8, in the sputtering target-backing plate joint 201 according to the present embodiment, the fastener 14 enters the outer peripheral side surface 9 leaving a part of the side surface, and the fastener 14 is fixed to the backing plate 1. It is preferable that it is. Since the fastener 14 is included in the shape of the sputtering target 2, the exposure of the corner portion of the fastener 14 can be reduced. Further, with such a structure, when the hook-shaped portion 6 comes into contact with the hook receiving portion 10, the sputtering target 2 is fixed to the side surface direction of the plate surface 3 of the backing plate 1 and the backing is performed. The sputtering target 2 can be fixed to the thickness direction of the plate surface 3 of the plate 1. The fastener 14 may be fixed to the backing plate 1 by a joining means such as diffusion joining or welding, in addition to fixing by screwing. FIG. 8 shows a form in which the fastener 14 is fixed to the plate surface 3 of the backing plate 1 by screwing at the screwed portion 11, but not only on the plate surface 3 but also on the side surface or the back surface of the backing plate 1. It may be fixed.

In the form shown in FIG. 8, the hook-shaped portion 6 and the hook receiving portion 10 can be brought into contact with each other in the same manner as in the form shown in FIG. 2, but the structure may be further as follows.
(1) It is preferable that the hook-shaped portion 6 and the hook receiving portion 10 are brought into contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2, but two or more hook-shaped portions 6 and the hook receiving portion 10 are partially formed. It may be brought into contact.
(2) The hook-shaped portion 6 and the hook receiving portion 10 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 8 (A) to 8 (N) and the like.
(3) When adhesion between the backing plate 1 and the sputtering target 2 is required in addition to the joining strength, when the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other, the hook-shaped portion 6 is transferred to the hook receiving portion 10. You may press it toward it.

(Form 3-2: The backing plate has a fastener, and the fastener has a hook receiving portion)
In the same way as the relationship between the form 1-1 and the form 1-2, that is, the arrangement of the hook-shaped portion and the hook receiving portion is reversed, in the form 3-1 the hook-shaped portion 6 and the hook receiving portion 10 The arrangement with and may be reversed (not shown).

(Form 4-1: The backing plate has a recess, and the recess has a hook-shaped portion)
As shown in FIG. 9, in the sputtering target-backing plate joint 300 according to the present embodiment, the backing plate 1 has a recess 17 on the plate surface 3, and the backing plate 1 has a hook shape on the inner peripheral side surface 16 of the recess 17. It is preferable that the portion 6 is provided and a part of the sputtering target 2 is fitted in the recess 17. In the embodiment of FIG. 9, a hook receiving portion 10 is provided on the outer peripheral side surface 9 of the sputtering target 2, and the hook-shaped portion 6 is brought into contact with the hook receiving portion 10 so as to be in contact with the side surface direction of the plate surface 3 of the backing plate 1. The sputtering target 2 can be fixed, and the sputtering target 2 can be fixed with respect to the thickness direction of the plate surface 3 of the backing plate 1. The difference from the form shown in FIG. 2 is that the bottom of the sputtering target 2 is embedded in the recess 17 by the depth of the recess 17 of the backing plate 1, so that the bottom of the sputtering target 2 is embedded in the recess 17 with respect to the side surface direction of the plate surface 3 of the backing plate 1. The sputtering target 2 can be fixed, and the sputtering target 2 can be fixed with respect to the thickness direction of the plate surface 3 of the backing plate 1.

In the form shown in FIG. 9, the hook-shaped portion 6 and the hook receiving portion 10 can be brought into contact with each other in the same manner as in the form shown in FIG. 2, but the structure may be further as follows.
(1) It is preferable that the hook-shaped portion 6 and the hook receiving portion 10 are brought into contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2, but two or more hook-shaped portions 6 and the hook receiving portion 10 are partially formed. It may be brought into contact.
(2) The hook-shaped portion 6 and the hook receiving portion 10 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 9 (A) to 9 (N) and the like.
(3) When adhesion between the backing plate 1 and the sputtering target 2 is required in addition to the joining strength, when the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other, the hook-shaped portion 6 is transferred to the hook receiving portion 10. You may press it toward it.

(Form 4-2: The backing plate has a recess, and the recess has a hook receiving portion)
In the same manner as the relationship between the form 1-1 and the form 1-2, that is, the arrangement of the hook-shaped portion and the hook receiving portion is reversed, in the form 4-1 the hook-shaped portion 6 and the hook receiving portion 10 The arrangement with and may be reversed (not shown).

(Form 5-1: The backing plate has a recess and the fastener has a hook-shaped portion)
As shown in FIG. 10, in the sputtering target-backing plate joint 400 according to the present embodiment, the backing plate 1 has a recess 17 in the plate surface 3, and the backing plate 1 has a fastener 14 in the recess 17. The fastener 14 has a hook-shaped portion 6, at least a part of the sputtering target 2 and at least a part of the fastener 14 are fitted in the recess 17, and the fastener 14 is fixed to the recess 17 of the backing plate 1. It is preferable to have. The difference from the form shown in FIG. 9 is that a fastener 14 is prepared separately from the backing plate 1 and the sputtering target 2, a hook-shaped portion 6 is formed on the side of the fastener 14 in contact with the sputtering target 2, and the sputtering target 2 is formed. After forming the hook receiving portion 10 on the outer peripheral side surface 9 and bringing the hook-shaped portion 6 of the fastener 14 into contact with the hook receiving portion 10 of the sputtering target 2, the fastener 14 and the sputtering target 2 are placed in the recess 17 of the backing plate 1. The sputtering target 2 can be fixed to the backing plate 1 by embedding the sputtering target 2 and fixing the fastener 14 toward the backing plate 1 at a portion not covered by the sputtering target 2. The sputtering target 2 can be fixed to the side surface direction of the plate surface 3 of the backing plate 1, and the sputtering target 2 can be fixed to the thickness direction of the plate surface 3 of the backing plate 1. The fastener 14 may be fixed to the backing plate 1 by a joining means such as diffusion joining or welding, in addition to fixing by screwing.

In the form shown in FIG. 10, the hook-shaped portion 6 and the hook receiving portion 10 can be brought into contact with each other in the same manner as in the form shown in FIG. 9, but the structure may be further as follows.
(1) It is preferable that the hook-shaped portion 6 and the hook receiving portion 10 are brought into contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2, but two or more hook-shaped portions 6 and the hook receiving portion 10 are partially formed. It may be brought into contact.
(2) The hook-shaped portion 6 and the hook receiving portion 10 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 10 (A) to 10 (N) and the like.
(3) When adhesion between the backing plate 1 and the sputtering target 2 is required in addition to the joining strength, when the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other, the hook-shaped portion 6 is transferred to the hook receiving portion 10. You may press it toward it.

(Form 5-2: The backing plate has a recess and the fastener has a hook receiving portion)
In the same way as the relationship between the form 1-1 and the form 1-2, that is, the arrangement of the hook-shaped portion and the hook receiving portion is reversed, in the form 5-1 the hook-shaped portion 6 and the hook receiving portion 10 The arrangement with and may be reversed (not shown).

(Modification example 1 of the shape of the hook-shaped part and the hook receiving part)
In the sputtering target-backing plate joint according to the present embodiment, the hook-shaped portion 6 has a first uneven shape portion, and the hook receiving portion 10 has a second uneven shape portion that matches the first uneven shape portion. Is preferable. In addition to improving the bonding strength between the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength between the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target, and as a result. , The bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good. Here, the second uneven shape portion that fits the first uneven shape portion is in a form in which the uneven shape portions are in contact with each other without a gap, and the uneven shape portions are caught by each other even though they have a gap. Includes a form that does not shift. As an example having such a form, for example, FIG. 2 (L), FIG. 2 (M), FIG. 2 (N), FIG. 5 (J), FIG. 5 (K), FIG. 5 (L), FIG. 7 ( L), FIG. 7 (M), FIG. 7 (N), FIG. 8 (L), FIG. 8 (M), FIG. 8 (N), FIG. 9 (L), FIG. 9 (M), FIG. 9 (N). , FIG. 10 (L), FIG. 10 (M) or FIG. 10 (N).

(Modification example 2 of the shape of the hook-shaped part and the hook receiving part)
In the sputtering target-backing plate joint according to the present embodiment, the hook-shaped portion 6 has a hook shape in which the hook tip in the direction from the backing plate 1 to the sputter surface is the maximum hooking point, and the hook receiving portion 10 has a hook shape. It is preferable to have a hook hole that fits in. In addition to improving the bonding strength between the sputtering target 2 and the backing plate 1 in the side surface direction of the sputtering target 2, the bonding strength between the sputtering target 2 and the backing plate 1 is also improved in the thickness direction of the sputtering target 2. As a result, the bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good. Here, the hook receiving portion has a hook hole that fits the hook shape. In addition to the form in which the hook hole fits into the hook shape without a gap, when the hook shape is inserted into the hook hole, the hook shape is caught even though it has a gap. Includes a form that does not shift. As an example having such a form, for example, FIG. 2 (D), FIG. 2 (F), FIG. 7 (D), FIG. 7 (F), FIG. 8 (D), FIG. 8 (F), FIG. 9 ( D), FIG. 9 (F), FIG. 10 (D) or FIG. 10 (F).

(Form 6-1: Form having an intermediate layer)
As shown in FIG. 11, the sputtering target-backing plate junction 500 according to the present embodiment has an intermediate layer 12 of 2.5 mm or less at the interface between the sputtering target 2 and the backing plate 1, and the intermediate layer 12 is Ni. , Cr, Al, Cu, at least one metal or an alloy containing at least one of Ni, Cr, Al, Cu. It is preferable that the plate material, powder, or a combination of the plate material and the powder is used. By relaxing the difference in linear expansion coefficient between the sputtering target 2 and the backing plate 1 by the intermediate layer 12, it is possible to further suppress damage and warpage of the sputtering target 2 due to repeated expansion due to heating and contraction due to cooling. Further, by providing the intermediate layer 12, the bonding strength between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. When the hook-shaped portion 6 of the backing plate 1 is provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2, the plate surface 3 of the backing plate 1 and the hook-shaped portion 6 of the backing plate 1 are provided. The intermediate layer 12 is provided at the inner portion and the portion surrounded by the target back surface 8 of the sputtering target 2. As a result, since the intermediate layer 12 is covered with the sputtering target 2, it is possible to prevent the material of the intermediate layer 12 from volatilizing and becoming impurities and adhering to the substrate. The reason for selecting the elements of Ni, Cr, Al, and Cu for the intermediate layer 12 is that they are suitable from the viewpoints of adhesion, heat conduction, and coefficient of linear expansion. When the intermediate layer 12 is a plate material, if the plate material is thicker than 2.5 mm, the height of the portion where the hook-shaped portion 6 of the backing plate 1 is provided must be set higher. When the intermediate layer 12 is a powder layer, there are a form in which it is in a powder state by heating, a form in which the powder is sintered, and a form in which the powder is melted by heating. The form in which the powder is melted by heating is similar to the form in which the intermediate layer 12 is a plate material. The intermediate layer 12 is preferably provided between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1, but in addition to this, the intermediate layer 12 and the outer peripheral side surface 9 including the hook receiving portion 10 of the sputtering target 2. It may be provided at the interface with the inner portion where the hook-shaped portion 6 of the backing plate 1 is provided. The hook-shaped portion 6 and the hook receiving portion 10 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 8 (A) to 8 (N) and the like.

(Form 6-2: Form having an intermediate layer)
In the sputtering target-backing plate joint 500 shown in FIG. 11, it has been described that the intermediate layer 12 is provided in the form of the hook-shaped portion 6 installed on the plate surface 3 of the backing plate 1, but the sputtering target shown in FIG. 12 has been described. -Even when the recess 17 is formed on the plate surface 3 of the backing plate 1 as in the backing plate joint 501, the intermediate layer 12 of 2.5 mm or less can be provided in the same manner.

(Form 7-1: Form having an intermediate layer)
Similar to the embodiment shown in FIG. 11, the sputtering target-backing plate junction according to the present embodiment has an intermediate layer 12 of 10 μm or less at the interface between the sputtering target 2 and the backing plate 1, and the intermediate layer 12 is Ni. , Cr, Al, Cu at least one kind of metal or an alloy containing at least one kind of Ni, Cr, Al, Cu is preferable. By relaxing the difference in linear expansion coefficient between the sputtering target 2 and the backing plate 1 by the intermediate layer 12, it is possible to further suppress damage and warpage of the sputtering target 2 due to repeated expansion due to heating and contraction due to cooling. Even if the film thickness of the intermediate layer 12 is thicker than 10 μm, it only takes time to form the intermediate layer 12, and the effect as the intermediate layer 12 is not so different from that of 10 μm or less. Further, by providing the intermediate layer 12, the bonding strength between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1 can be improved, and the adhesion can be improved to maintain good heat conduction. When the hook-shaped portion 6 of the backing plate 1 is provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2, the plate surface 3 of the backing plate 1 and the hook-shaped portion 6 of the backing plate 1 are provided. The intermediate layer 12 is provided at the inner portion and the portion surrounded by the target back surface 8 of the sputtering target 2. As a result, since the intermediate layer 12 is covered with the sputtering target 2, it is possible to prevent the material of the intermediate layer 12 from volatilizing and becoming impurities and adhering to the substrate. The reason for selecting the elements of Ni, Cr, Al, and Cu for the intermediate layer 12 is that they are suitable from the viewpoints of adhesion, heat conduction, and coefficient of linear expansion. The thin film is preferably a thin film produced by sputtering, and is preferably formed on the plate surface 3 of the backing plate 1. Further, a foil having a thickness of 10 μm or less may be used. The intermediate layer 12 is preferably provided between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1, but in addition to this, the intermediate layer 12 and the outer peripheral side surface 9 including the hook receiving portion 10 of the sputtering target 2. It may be provided at the interface with the inner portion where the hook-shaped portion 6 of the backing plate 1 is provided. The hook-shaped portion 6 and the hook receiving portion 10 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 8 (A) to 8 (N) and the like.

(Form 7-2: Form having an intermediate layer)
In the sputtering target-backing plate joint 500 shown in FIG. 11, it has been described that the intermediate layer 12 is provided in the form of the hook-shaped portion 6 installed on the plate surface 3 of the backing plate 1, but the sputtering target shown in FIG. 12 has been described. -Even when the recess 17 is formed on the plate surface 3 of the backing plate 1 as in the backing plate joint 501, the intermediate layer 12 of 10 μm or less can be similarly provided.

(Form 8-1: Form having an intermediate layer)
Similar to the embodiment shown in FIG. 11, the sputtering target-backing plate junction according to the present embodiment has an intermediate layer 12 of 1.0 mm or less at the interface between the sputtering target 2 and the backing plate 1, and the intermediate layer 12 has an intermediate layer 12 or less. , In, Zn, or at least one of In, Zn, or an alloy containing at least one of In, Zn, preferably a plate material, a powder, or a combination of the plate material and the powder. By relaxing the difference in linear expansion coefficient between the sputtering target 2 and the backing plate 1 by the intermediate layer 12, it is possible to further suppress damage and warpage of the sputtering target 2 due to repeated expansion due to heating and contraction due to cooling. The reason for selecting the In and Zn elements for the intermediate layer 12 is that they are suitable from the viewpoints of adhesion, heat conduction and linear expansion coefficient. When the intermediate layer 12 is a plate material, if the plate material is thicker than 1.0 mm, In and Zn are easily oxidized materials, so that the hardness increases and the intermediate layer 12 may crack. Further, by providing the intermediate layer 12, the bonding strength between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1 can be improved, and the adhesion can be improved to maintain good heat conduction. When the hook-shaped portion 6 of the backing plate 1 is provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2, the plate surface 3 of the backing plate 1 and the hook-shaped portion 6 of the backing plate 1 are provided. The intermediate layer 12 is provided at the inner portion and the portion surrounded by the target back surface 8 of the sputtering target 2. As a result, since the intermediate layer 12 is covered with the sputtering target 2, it is possible to prevent the material of the intermediate layer 12 from volatilizing and becoming impurities and adhering to the substrate. When the intermediate layer 12 is a powder layer, there are a form in which it is in a powder state by heating, a form in which the powder is sintered, and a form in which the powder is melted by heating. The form in which the powder is melted by heating is similar to the form in which the intermediate layer 12 is a plate material. The intermediate layer 12 is preferably provided between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1, but in addition to this, the intermediate layer 12 and the outer peripheral side surface 9 including the hook receiving portion 10 of the sputtering target 2. It may be provided at the interface with the inner portion where the hook-shaped portion 6 of the backing plate 1 is provided. The hook-shaped portion 6 and the hook receiving portion 10 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 8 (A) to 8 (N) and the like.

(Form 8-2: Form having an intermediate layer)
In the sputtering target-backing plate joint 500 shown in FIG. 11, it has been described that the intermediate layer 12 is provided in the form of the hook-shaped portion 6 installed on the plate surface 3 of the backing plate 1, but the sputtering target shown in FIG. 12 has been described. -Even when the recess 17 is formed on the plate surface 3 of the backing plate 1 as in the backing plate joint 501, the intermediate layer 12 of 1.0 mm or less can be similarly provided.

(Form 9-1: Form having an intermediate layer)
As shown in FIG. 13, the sputtering target-backing plate alloy 600 according to the present embodiment has two intermediate layers 12 at the interface between the sputtering target 2 and the backing plate 1, and the intermediate layer 12a is 2.5 mm. A plate or powder made of at least one of the following Ni, Cr, Al, and Cu metals or an alloy containing at least one of Ni, Cr, Al, and Cu, or a combination of the plate and the powder, 10 μm or less. A thin film made of at least one metal of Ni, Cr, Al, or Cu or an alloy containing at least one of Ni, Cr, Al, or Cu, or at least one of In and Zn of 1.0 mm or less. The intermediate layer 12b is made of a plate or powder made of a metal or an alloy containing at least one of In and Zn, or a combination of the plate and the powder, and the intermediate layer 12b is Ni, Cr, Al, Cu of 2.5 mm or less. A plate or powder composed of at least one of the metals or an alloy containing at least one of Ni, Cr, Al, and Cu, or a combination of the plate and the powder, and at least 10 μm or less of Ni, Cr, Al, and Cu. A thin film made of any one metal or an alloy containing at least one of Ni, Cr, Al, and Cu, or at least one of In and Zn of 1.0 mm or less, or at least one of In and Zn. It is preferably composed of a plate material or powder made of an alloy containing one kind, or a combination of the plate material and the powder. By relaxing the difference in linear expansion coefficient between the sputtering target 2 and the backing plate 1 by the intermediate layer 12, it is possible to further suppress damage and warpage of the sputtering target 2 due to repeated expansion due to heating and contraction due to cooling. The intermediate layer 12a installed at the interface with the backing plate 1 is a metal containing at least one of Ni, Cr, Al, and Cu, or an alloy containing at least one of Ni, Cr, Al, and Cu, and at least In and Zn. The reason for forming with various forms of materials made of any one kind of metal or an alloy containing at least one kind of In and Zn is that it is suitable from the viewpoint of adhesion, thermal conductivity and linear expansion coefficient. Further, the intermediate layer 12b installed at the interface with the sputtering target 2 is a metal containing at least one of Ni, Cr, Al and Cu, or an alloy containing at least one of Ni, Cr, Al and Cu, In and Zn. The reason for forming with various forms of materials made of at least one of the above metals or alloys containing at least one of In and Zn is suitable from the viewpoint of adhesion, thermal conductivity and linear expansion coefficient. Although the intermediate layer is shown in the form of two layers in FIG. 13, the intermediate layer may be in the form of three or more layers as long as the effect of the intermediate layer described above is obtained. The intermediate layer 12 is preferably provided between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1, but in addition to this, the intermediate layer 12 and the outer peripheral side surface 9 including the hook receiving portion 10 of the sputtering target 2. It may be provided at the interface with the inner portion where the hook-shaped portion 6 of the backing plate 1 is provided. The hook-shaped portion 6 and the hook receiving portion 10 may be brought into contact with each other using the forms of the hook-shaped portion and the hook receiving portion shown in FIGS. 8 (A) to 8 (N) and the like.

(Form 9-2: Form having an intermediate layer)
In the sputtering target-backing plate joint 600 shown in FIG. 13, it has been described that the intermediate layer 12 is provided in the form of the hook-shaped portion 6 installed on the plate surface 3 of the backing plate 1, but the sputtering target shown in FIG. 14 has been described. -The intermediate layer 12 can be similarly provided even when the recess 17 is formed on the plate surface 3 of the backing plate 1 as in the backing plate joint body 601.

(Material of sputtering target)
In the sputtering target-backing plate joint according to the present embodiment, the material of the sputtering target 2 may be an Al—Sc alloy, Ru, Ru alloy, Ir or Ir alloy. Further, Li-based oxides, Co-based oxides, Ti-based oxides, Mg-based oxides and the like can also be used. Even with a high melting point material of 1000 ° C. or higher, the bonding strength between the sputtering target and the backing plate can be improved while suppressing warpage and cracking of the sputtering target.

In the sputtering target-backing plate joint according to the present embodiment, the material of the backing plate 1 is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the linear expansion coefficient is 30.0 × 10 ^-6 / ° C. The following is preferable. The linear expansion coefficient is preferably 28.5 × 10 ^-6 / ° C or less, and more preferably 27.3 × 10 ^-6 / ° C or less. If the coefficient of linear expansion is larger than 30.0 × 10 ^-6 / ° C, the coefficient of linear expansion is caused by repeated expansion and contraction of the backing plate 1 due to heating and cooling, resulting in cracking and warping of the sputtering target. Is preferably 30.0 × 10 ^-6 / ° C. or lower. Further, by using a backing plate having good thermal conductivity, the backing plate expands at the time of heating, and the plate surface 3 of the backing plate 1 and the inner portion where the hook-shaped portion 6 of the backing plate 1 is provided. The sputtering target can be inserted into the portion surrounded by the target back surface 8 of the sputtering target 2 or the recess of the backing plate, and the backing plate contracts during cooling, and the hook-shaped portion 6 of the backing plate causes the sputtering target to be inserted. A joint can be formed by abutting or abutting and pressing the hook receiving portion 10. The lower limit of the coefficient of linear expansion is preferably 6.0 × 10 ^-6 / ° C. or higher.

[Relational expression including linear expansion coefficient] (ΔT is common)
When the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other, the sputtering target is firmly fixed by the backing plate by pressing the sputtering target from the backing plate at the contact surface. May be good. The surface of the backing plate that presses the sputtering target from the backing plate when the hook-shaped portion 6 and the hook receiving portion 10 are in contact with each other is called a pressing surface. The surface of the sputtering target that is pressed by the backing plate is called the contact surface.
When the contact surface of the sputtering target 2 is pressed by the pressing surface of the backing plate 1, the pressing surface has at least a pair of surfaces arranged at positions facing each other across the contact surface, and the pairing pressing is performed. It is preferable that the relationship between the distance between the surfaces and the distance between the contact surfaces in contact with the paired pressing surface satisfies (Equation 1) to (Equation 5).
(Number 1) D _TG > D _BP
(Number 2) D _BP = D _TG -ΔD × C
(Equation 3) ΔD = D _BP × ΔT × CTE _BP −D _TG × ΔT × CTE _TG
(Number 4) D _TG -ΔD × 4.0 ≦ D _BP ≦ D _TG -ΔD × 0.5
(Number 5) CTE _BP > CTE _TG
However, D _BP , D _TG , ΔD, C, T, ΔT, CTE _BP and CTE _TG mean the following, respectively.
_DBP : Distance (mm) between the paired pressing surfaces at room temperature.
_DTG : Distance between contact surfaces in contact with the pair of pressing surfaces (mm) at room temperature.
T: Temperature (° C) at which the backing plate is thermally expanded to fit the sputtering target (where T> room temperature)
ΔT: T-room temperature (° C)
CTE _BP : Linear expansion coefficient (1 / ° C.) of the backing plate at temperature T
CTE _TG : Coefficient of linear expansion of sputtering target at temperature T (1 / ° C)
C: Coefficient (however, C = 0.5 to 4.0)
ΔD: Difference in thermal expansion amount between the backing plate and the sputtering target when the temperature is raised from room temperature to temperature T (mm)
Here, when the shape of the plane of the backing plate 1 is rectangular, the long side of the sputtering target 2 and the long side of the backing plate 1 are made to correspond, and the short side of the sputtering target 2 and the short side of the backing plate 1 are made to correspond. .. As shown in (Equation 1), at room temperature, the distance between the contact surfaces of the sputtering targets 2 is larger than the distance between the pressing surfaces of the backing plate 1, and the sputtering target 2 is placed inside the pressing surfaces of the backing plate 1. You can't put it in. Here, the room temperature is 25 ° C. Here, as the form of (1), consider a form in which both the backing plate 1 and the sputtering target 2 are heated to the temperature T. When the backing plate 1 is heated from room temperature to the temperature T at which the backing plate is thermally expanded, the distance between the pressing surfaces of the backing plate 1 is thermally expanded to the length obtained by ( _{DBP × ΔT × CTE BP} ₎ . .. Further, when the temperature of the sputtering target 2 is raised from room temperature to the temperature T, the distance between the contact surfaces of the sputtering target 2 undergoes thermal expansion of the length obtained by (D _TG × ΔT × CTE _TG ). Therefore, when the relationship (Equation 5) with respect to the linear expansion coefficient is established, when both the backing plate 1 and the sputtering target 2 are raised to the temperature T, the pressing surface of the backing plate 1 is sputtered by the length of ΔD. It expands more thermally than the contact surface of the target 2. If the distance between the pressing surfaces of the backing plate 1 is the same as or larger than the distance between the contact surfaces of the sputtering target 2 due to this thermal expansion, the sputtering target 2 can be fitted inside the pressing surface of the backing plate 1. Become. Then, when the temperature is lowered to room temperature, the contact surface of the sputtering target 2 is pressed by the pressing surface of the backing plate 1 according to the relationship shown in (Equation 1). In the above-described embodiment (1), in order to enable the contact surface of the sputtering target 2 to be pressed by the pressing surface of the backing plate 1, the distance between the pressing surfaces of the backing plate 1 is increased by the thermal expansion of the backing plate 1. The distance between the contact surfaces of the sputtering targets 2 must be reversed. Therefore, the relationship between the distance between the pressing surfaces of the backing plate 1 at room temperature and the distance between the contact surfaces of the sputtering targets 2 at room temperature can be set as small as possible (Equation 2). ) And (Equation 4). In (Equation 2) and (Equation 4), C is a coefficient, but when C is in the range of 0.5 to 4.0, the contact surface of the sputtering target 2 is pressed by the pressing surface of the backing plate 1. When joining the sputtering target and the backing plate, it is possible to suppress cracking and warpage of the sputtering target.

In this embodiment, not only (1) both the backing plate 1 and the sputtering target 2 described above are heated to the temperature T, but also (2) the backing plate 1 is heated to the temperature T and the sputtering target 2 is heated. Includes a form in which the temperature is raised only to a temperature T ₁ lower than the temperature T, and (3) a form in which the backing plate 1 is raised to a temperature T and the sputtering target 2 is not raised.

[Relational expression including linear expansion coefficient] (Different between ΔT (BP) and ΔT ₁ (TG))
When the contact surface of the sputtering target 2 is pressed by the pressing surface of the backing plate 1, the pressing surface has at least a pair of surfaces arranged at positions facing each other across the contact surface, and the pairing pressing is performed. It is preferable that the relationship between the distance between the surfaces and the distance between the contact surfaces in contact with the paired pressing surface satisfies (Equation 6) to (Equation 10).
(Number 6) D _TG > D _BP
(Number 7) D _BP = D _TG -ΔD × C
(Equation 8) ΔD = D _BP × ΔT × CTE _BP −D _TG × ΔT ₁ × CT ₁ E _TG
(Equation 9) D _TG −ΔD × 4.0 ≦ D _BP ≦ D _TG −ΔD × 0.5
(Number 10) CTE _BP > CT ₁ _ETG
However, D _BP , D _TG , ΔD, C, T, ΔT, T ₁ , ΔT ₁ , CTE _BP and CT ₁ E _TG mean the following, respectively.
_DBP : Distance (mm) between the paired pressing surfaces at room temperature.
_DTG : Distance between contact surfaces in contact with the pair of pressing surfaces (mm) at room temperature.
T: The temperature (° C.) of the backing plate when the backing plate is thermally expanded to fit the sputtering target (where T> room temperature, T> T ₁ ).
ΔT: T-room temperature (° C)
T ₁ : Temperature (° C.) of the sputtering target when the backing plate is thermally expanded to fit the sputtering target (however, T ₁ ≧ room temperature, T> T ₁ )
ΔT ₁ : T ₁ -room temperature (° C)
CTE _BP : Linear expansion coefficient (1 / ° C.) of the backing plate at temperature T
CT ₁ _ETG : Linear expansion coefficient ( ₁ / ° C.) of the sputtering target at temperature T1.
C: Coefficient (however, C = 0.5 to 4.0)
ΔD: Difference in thermal expansion amount between the backing plate when the temperature is raised from room temperature to temperature T and the sputtering target when the temperature is raised from room temperature to temperature T ₁ (mm)
Here, when the form (3) is similarly examined, when the backing plate 1 is heated from room temperature to the temperature T at which the backing plate is thermally expanded, the distance between the pressing surfaces of the backing plate 1 is ( _DBP ×). It undergoes thermal expansion of the length obtained by ΔT × CTE _BP ). Further, since the sputtering target 2 remains at room temperature, the distance between the contact surfaces of the sputtering targets 2 does not thermally expand. Then, when only the backing plate 1 is thermally expanded by raising the temperature to the temperature T, the distance between the pressing surfaces of the backing plate 1 is thermally expanded by the length obtained by ( _{DBP × ΔT × CTE BP} ₎ , and the backing is performed. Since the distance between the pressing surfaces of the plate 1 is larger than the distance between the contact surfaces of the sputtering target 2, the sputtering target 2 can be fitted inside the pressing surface of the backing plate 1. Then, when the temperature is lowered to room temperature, the contact surface of the sputtering target 2 is pressed by the pressing surface of the backing plate 1 according to the relationship shown in (Equation 6). In the above-described embodiment (3), in order to enable the contact surface of the sputtering target 2 to be pressed by the pressing surface of the backing plate 1, the distance between the pressing surfaces of the backing plate 1 is increased by the thermal expansion of the backing plate 1. The distance between the contact surfaces of the sputtering targets 2 must be reversed. Therefore, the relationship between the distance between the pressing surfaces of the backing plate 1 at room temperature and the distance between the contact surfaces of the sputtering targets 2 at room temperature can be set as small as possible (Equation 7). ) And (Equation 9). In (Equation 7) and (Equation 9), C is a coefficient, but when C is in the range of 0.5 to 4.0, the contact surface of the sputtering target 2 is pressed by the pressing surface of the backing plate 1. When joining the sputtering target and the backing plate, it is possible to suppress cracking and warpage of the sputtering target.

Since the form (2) is an intermediate form between the form (1) and the form (3), the contact surface of the sputtering target 2 is similarly pressed by the pressing surface of the backing plate 1.

<Manufacturing method of sputtering target-backing plate joint>
[First example of manufacturing method]
(Step 1)
Next, a method for manufacturing the sputtering target-backing plate junction 100 shown in FIG. 2 will be described with reference to FIG. First, as shown in FIG. 15A, a sputtering target 2 having a backing plate 1, a target surface 7, a target back surface 8 facing the plate surface 3 of the backing plate, and an outer peripheral side surface 9 is prepared. Next, as shown in FIG. 15B, the backing plate 1 is formed with a convex portion 13 capable of forming a plate surface 3, a plate back surface 4, a plate side surface 5, and a hook-shaped portion 6. The backing plate 1 can be formed by cutting using a lathe or the like. The plate surface inside the convex portion 13 is also the plate surface 3. As long as the sputtering target 2 and the backing plate 1 can be joined, the heights of the plate surface 3 inside the convex portion 13 and the plate surface outside the convex portion 13 may be the same or different. Next, as shown in FIG. 15B, considering the height and width of the convex portion 13 formed on the backing plate 1, the hook-shaped portion 6 formed on the convex portion 13 and the outer peripheral side surface of the sputtering target 2. The lower part of the outer peripheral side surface 9 of the sputtering target 2 is removed to the extent that the hook receiving portion 10 formed in the lower part of the 9 can come into contact with the hook receiving portion 10. As a means for removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, a cutting process using a lathe or the like can be performed. The outer circumference of the removed portion is also defined as the outer peripheral side surface 9. Next, as shown in FIG. 15C, a hook-shaped portion 6 is formed on the convex portion 13 formed on the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the convex portion 13 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be partially provided with respect to the side surface 9. Next, as shown in FIG. 15C, a hook receiving portion 10 is formed at a position where the convex portion 13 formed on the backing plate 1 can come into contact with the hook-shaped portion 6 at the lower portion of the outer peripheral side surface 9 of the sputtering target 2. do. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. Although it may be partially provided in, it is necessary to provide it at a position where it comes into contact with the hook-shaped portion 6.

(Step 2)
Next, as shown in FIG. 15D, the backing plate 1 is heated and thermally expanded to such an extent that the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook-shaped portion 6 of the backing plate 1. At this time, if the purpose of inserting the lower portion of the outer peripheral side surface 9 of the sputtering target 2 into the inside of the hook-shaped portion 6 of the backing plate 1 can be achieved, the sputtering target 2 is heated while the backing plate 1 is being heated. May be good. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), a heating method using a hot plate, or the like. When the intermediate layer is provided at the interface between the backing plate 1 and the sputtering target 2, it is preferable to provide the intermediate layer in the process of FIG. 15 (D) or before and after the process of FIG. 15 (D), in other words, FIG. 15 (C). It is preferable to form the intermediate layer in the step between FIG. 15 (D), while performing FIG. 15 (D), or in the step between FIGS. 15 (D) and 15 (E) (in FIG. 15). Not shown).

(Step 3)
Next, as shown in FIG. 15 (E), the lower portion of the outer peripheral side surface 9 of the sputtering target 2 is inserted inside the hook-shaped portion 6 of the backing plate 1, and the target back surface 8 of the sputtering target 2 and the plate of the backing plate 1 are inserted. The surfaces 3 are aligned, and the hook-shaped portion 10 of the sputtering target 2 and the hook-shaped portion 6 of the backing plate 1 are arranged so as to face each other. At this time, as long as the hook-shaped portion 6 of the backing plate 1 and the hook receiving portion 10 of the sputtering target 2 are not deformed, pressure may be applied from the target surface 7 of the sputtering target 2 toward the backing plate 1.

(Step 4)
Next, as shown in FIG. 15 (F), the backing plate 1 is cooled and heat-shrinked, and the hook receiving portion 10 of the sputtering target 2 and the hook-shaped portion 6 of the backing plate 1 are brought into contact with each other to bring the sputtering target into contact with each other. Since the movement of the backing plate 2 in the side surface direction is suppressed and the movement of the sputtering target 2 in the thickness direction is suppressed, the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured. Cooling is performed while adjusting the temperature by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or a heating method using a hot plate. Although it can be performed, the heating performed by the hot press sintering method (HP), the hot isotropic pressure sintering method (HIP), the discharge plasma sintering method (SPS), the heating method using a hot plate, etc. is stopped. Then, it may be naturally cooled.

(Additional step after step 4)
If it is desired to further secure the adhesion between the backing plate 1 and the sputtering target 2, after the step 4, the target surface 7 of the sputtering target 2 is pressed against the backing plate 1, or the sputtering target 2 and the backing plate 1 are heated. The step of pressing the sputtering target 2 from the target surface 7 to the backing plate 1 and the step of cooling the sputtering target 2 and the backing plate 1 may be performed once as a set or repeated twice or more. Further, the position of the convex portion 13 of the backing plate 1, the amount to be removed from the lower portion of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook-shaped portion 6, the position of the hook receiving portion 10, and the like are adjusted to adjust the hook-shaped portion of the backing plate 1. The pressure may be applied from the 6 side to the hook receiving portion 10 side of the sputtering target 2, or the pressure may be applied from the target back surface 8 of the sputtering target 2 to the plate surface 3 of the backing plate 1.

[Second example of manufacturing method]
(Step 1)
Next, a method for manufacturing the sputtering target-backing plate junction 201 shown in FIG. 8 will be described with reference to FIG. In the method of manufacturing the sputtering target-backing plate joint 201 according to the present embodiment, first, as shown in FIG. 16A, a backing plate 1 having a plate surface 3, a plate back surface 4 and a plate side surface 5 and a target A sputtering target 2 and a fastener 14 having a surface 7, a target back surface 8 facing the plate surface 3, and an outer peripheral side surface 9 are prepared. Next, as shown in FIG. 16B, considering the height and width of the fastener 14 fixed to the backing plate 1, the hook-shaped portion 6 formed on the fastener 14 and the outer peripheral side surface of the sputtering target 2. The lower part of the outer peripheral side surface 9 of the sputtering target 2 is removed to the extent that the hook receiving portion 10 formed in the lower part of the 9 can come into contact with the hook receiving portion 10. As a means for removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, a cutting process using a lathe or the like can be performed. The outer periphery of the removed portion is also defined as the outer peripheral side surface 9. Next, in consideration of contacting the hook-shaped portion 6 formed on the fastener 14 with the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target, the fastener 14 is attached to the plate surface 3 of the backing plate 1. To fix. As a means for fixing the fastener 14 to the plate surface 3 of the backing plate 1, in addition to fixing by screwing, a joining means such as diffusion joining or welding can be used. Next, as shown in FIG. 16C, the hook-shaped portion 6 is formed on the fastener 14 fixed to the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the fastener 14 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be provided partially with respect to the side surface 9. Next, as shown in FIG. 16C, a hook receiving portion 10 is formed at a position where the fastener 14 fixed to the backing plate 1 can come into contact with the hook-shaped portion 6 at the lower portion of the outer peripheral side surface 9 of the sputtering target 2. do. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. However, it is necessary to provide the fastener 14 at a position where it comes into contact with the hook-shaped portion 6.

(Step 2)
Next, as shown in FIG. 16D, the backing plate 1 is heated to such an extent that the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1. And thermally expand. At this time, if the purpose of inserting the lower portion of the outer peripheral side surface 9 of the sputtering target 2 into the inside of the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 can be achieved, sputtering is performed while the backing plate 1 is being heated. The target 2 may be heated. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), a heating method using a hot plate, or the like. When the intermediate layer is provided at the interface between the backing plate 1 and the sputtering target 2, it is preferable to provide the intermediate layer in the process of FIG. 16 (D) or before and after the process of FIG. 16 (D), in other words, FIG. 16 (C). It is preferable to form the intermediate layer in the step between FIG. 16 (D), while performing FIG. 16 (D), or in the step between FIGS. 16 (D) and 16 (E) (in FIG. 16). Not shown).

(Step 3)
Next, as shown in FIG. 16E, the lower portion of the outer peripheral side surface 9 of the sputtering target 2 is inserted inside the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1, and the back surface 8 of the target of the sputtering target 2 is inserted. And the plate surface 3 of the backing plate 1 are aligned with each other, and the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 is arranged so as to face each other with the hook receiving portion 10 of the sputtering target 2. At this time, if the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 and the hook receiving portion 10 of the sputtering target 2 are not deformed, the pressing is applied from the target surface 7 of the sputtering target 2 toward the backing plate 1. May be added.

(Step 4)
Next, as shown in FIG. 16F, the backing plate 1 is cooled and heat-shrinked, and the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 is brought into contact with the hook receiving portion 10 of the sputtering target 2. By doing so, the movement of the sputtering target 2 in the side surface direction is suppressed and the movement of the sputtering target 2 in the thickness direction is suppressed, so that the bonding strength between the backing plate 1 and the sputtering target 2 can be secured. Cooling is performed while adjusting the temperature by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or a heating method using a hot plate. Although it can be performed, the heating performed by the hot press sintering method (HP), the hot isotropic pressure sintering method (HIP), the discharge plasma sintering method (SPS), the heating method using a hot plate, etc. is stopped. Then, it may be naturally cooled.

(Additional step after step 4)
If it is desired to further secure the adhesion between the backing plate 1 and the sputtering target 2, after the step 4, the target surface 7 of the sputtering target 2 is pressed against the backing plate 1, or the sputtering target 2 and the backing plate 1 are heated. The step of pressing the sputtering target 2 from the target surface 7 to the backing plate 1 and the step of cooling the sputtering target 2 and the backing plate 1 may be performed once as a set or repeated twice or more. Further, the position of the fastener 14 of the backing plate 1, the amount to be removed from the lower portion of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook-shaped portion 6, the position of the hook receiving portion 10, and the like are adjusted, and the fastener installed on the backing plate 1 is installed. Pressing may be applied from the hook-shaped portion 6 side of the tool 14 to the hook receiving portion 10 side of the sputtering target 2, and the pressing is applied from the target back surface 8 of the sputtering target 2 to the plate surface 3 of the backing plate 1. May be good.

[Third example of manufacturing method]
(Step 1)
Next, another embodiment of the method for manufacturing the sputtering target-backing plate junction 201 shown in FIG. 8 will be described with reference to FIG. In the method for manufacturing the sputtering target-backing plate joint 201 according to the present embodiment, first, as shown in FIG. 17A, a backing plate 1 having a plate surface 3, a plate back surface 4 and a plate side surface 5 and a target A sputtering target 2 and a fastener 14 having a surface 7, a target back surface 8 facing the plate surface 3, and an outer peripheral side surface 9 are prepared. Next, as shown in FIG. 17B, considering the height and width of the fastener 14 fixed to the backing plate 1, the hook-shaped portion 6 formed on the fastener 14 and the outer peripheral side surface of the sputtering target 2. The lower part of the outer peripheral side surface 9 of the sputtering target 2 is removed to the extent that the hook receiving portion 10 formed in the lower part of the 9 can come into contact with the hook receiving portion 10. As a means for removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, a cutting process using a lathe or the like can be performed. The outer periphery of the removed portion is also defined as the outer peripheral side surface 9. Next, the hook-shaped portion 6 is formed on the fastener 14 fixed to the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the fastener 14 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be provided partially with respect to the side surface 9. Next, as shown in FIG. 17C, a hook receiving portion 10 is formed at the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can come into contact with the hook-shaped portion 6 of the fastener 14 fixed to the backing plate 1. do. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. However, it is necessary to provide the fastener 14 at a position where it comes into contact with the hook-shaped portion 6. Next, as shown in FIG. 17C, considering that the hook-shaped portion 6 formed on the fastener 14 and the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 are brought into contact with each other. The fastener 14 is fixed to the plate surface 3 of the backing plate 1. As a means for fixing the fastener 14 to the plate surface 3 of the backing plate 1, in addition to fixing by screwing, a joining means such as diffusion joining or welding can be used.

(Step 2)
Next, as shown in FIG. 17D, the backing plate 1 is heated to such an extent that the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1. And thermally expand. At this time, if the purpose of inserting the lower portion of the outer peripheral side surface 9 of the sputtering target 2 into the inside of the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 can be achieved, sputtering is performed while the backing plate 1 is being heated. The target 2 may be heated. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), a heating method using a hot plate, or the like. When the intermediate layer is provided at the interface between the backing plate 1 and the sputtering target 2, it is preferable to provide the intermediate layer in the process of FIG. 17 (D) or before and after the process of FIG. 17 (D), in other words, FIG. 17 (C). It is preferable to form the intermediate layer in the step between FIG. 17 (D), while performing FIG. 17 (D), or in the step between FIGS. 17 (D) and 17 (E) (in FIG. 17). Not shown).

(Step 3)
Next, as shown in FIG. 17 (E), the lower portion of the outer peripheral side surface 9 of the sputtering target 2 is inserted inside the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1, and the back surface 8 of the target of the sputtering target 2 is inserted. And the plate surface 3 of the backing plate 1 are aligned with each other, and the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 is arranged so as to face each other with the hook receiving portion 10 of the sputtering target 2. At this time, if the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 and the hook receiving portion 10 of the sputtering target 2 are not deformed, the pressing is applied from the target surface 7 of the sputtering target 2 toward the backing plate 1. May be added.

(Step 4)
Next, as shown in FIG. 17 (F), the backing plate 1 is cooled and heat-shrinked, and the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 is brought into contact with the hook receiving portion 10 of the sputtering target 2. By doing so, the movement of the sputtering target 2 in the side surface direction is suppressed and the movement of the sputtering target 2 in the thickness direction is suppressed, so that the bonding strength between the backing plate 1 and the sputtering target 2 can be secured. Cooling is performed while adjusting the temperature by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or a heating method using a hot plate. Although it can be performed, the heating performed by the hot press sintering method (HP), the hot isotropic pressure sintering method (HIP), the discharge plasma sintering method (SPS), the heating method using a hot plate, etc. is stopped. Then, it may be naturally cooled.

[Fourth example of manufacturing method]
(Step 1)
Next, a method for manufacturing the sputtering target-backing plate junction 200 shown in FIG. 7 will be described with reference to FIG. In the method for manufacturing the sputtering target-backing plate joint 200 according to the present embodiment, first, as shown in FIG. 18A, a backing plate 1 having a plate surface 3, a plate back surface 4 and a plate side surface 5 and a target A sputtering target 2 and a fastener 14 having a surface 7, a target back surface 8 facing the plate surface 3, and an outer peripheral side surface 9 are prepared. Next, as shown in FIG. 18B, the hook formed on the fastener 14 is formed in consideration of the height and width of the fastener 14 whose lower portion of the outer peripheral side surface 9 of the sputtering target 2 is fixed to the backing plate 1. The lower portion of the outer peripheral side surface 9 of the sputtering target 2 is removed to the extent that the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can come into contact with the shaped portion 6. As a means for removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, a cutting process using a lathe or the like can be performed. The outer periphery of the removed portion is also defined as the outer peripheral side surface 9. Next, as shown in FIG. 18C, the hook-shaped portion 6 is formed on the fastener 14 fixed to the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 of the fastener 14 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the fastener 14 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be partially provided with respect to the side surface 9. Next, as shown in FIG. 18C, a hook receiving portion 10 is formed at the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can come into contact with the hook-shaped portion 6 of the fastener 14 fixed to the backing plate 1. do. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. However, it is necessary to provide the fastener 14 at a position where it comes into contact with the hook-shaped portion 6.

(Step 2)
As shown in FIG. 18C, the sputtering target 2 and the backing plate 1 are arranged so that the plate surface 3 and the target back surface 8 face each other.

(Step 3)
Next, as shown in FIG. 18D, the hook-shaped portion 6 formed on the fastener 14 and the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 are brought into contact with each other. Next, as shown in FIG. 18E, the sputtering target 2 and the fastener are arranged so that the fastener 14 is arranged on the plate surface 3 and the hook receiving portion 10 and the hook-shaped portion 6 face each other. 14 and are arranged.

(Step 4)
Next, in FIG. 18E, by fixing the fastener 14 to the plate surface 3 of the backing plate 1 in the arrangement state of the step 3, the movement of the sputtering target 2 in the side surface direction is suppressed, and the sputtering target 2 is suppressed. Since the movement of the backing plate 1 in the thickness direction is suppressed, the bonding strength between the backing plate 1 and the sputtering target 2 can be secured. As a means for fixing the fastener 14 to the plate surface 3 of the backing plate 1, in addition to fixing by screwing, a joining means such as diffusion joining or welding can be used.

(Additional step after step 4)
If it is desired to further secure the adhesion between the backing plate 1 and the sputtering target 2, after the step 4, the target surface 7 of the sputtering target 2 is pressed against the backing plate 1, or the sputtering target 2 and the backing plate 1 are heated. The step of pressing the sputtering target 2 from the target surface 7 to the backing plate 1 and the step of cooling the sputtering target 2 and the backing plate 1 may be performed once as a set or repeated twice or more.

[Fifth example of manufacturing method]
(Step 1)
Next, with reference to FIG. 19, a method for manufacturing the junction 202 having a structure similar to that of the sputtering target-backing plate junction 200 shown in FIG. 7 will be described. The method for manufacturing the sputtering target-backing plate joint 202 according to the present embodiment is as follows: first, as shown in FIG. 19A, a backing plate 1 having a plate surface 3, a plate back surface 4 and a plate side surface 5 and a target. A sputtering target 2 and a fastener 14 having a surface 7, a target back surface 8 facing the plate surface 3, and an outer peripheral side surface 9 are prepared. At this time, the bottom portion of the fastener 14 has a shape capable of covering the target back surface 8 of the sputtering target 2. Next, as shown in FIG. 19B, the hook formed on the fastener 14 is formed in consideration of the height and width of the fastener 14 whose lower portion of the outer peripheral side surface 9 of the sputtering target 2 is fixed to the backing plate 1. The lower portion of the outer peripheral side surface 9 of the sputtering target 2 is removed to the extent that the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can come into contact with the shaped portion 6. As a means for removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, a cutting process using a lathe or the like can be performed. The outer periphery of the removed portion is also defined as the outer peripheral side surface 9. Next, as shown in FIG. 19C, the hook-shaped portion 6 is formed on the fastener 14 fixed to the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the fastener 14 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be provided partially with respect to the side surface 9. Next, as shown in FIG. 19C, a hook receiving portion 10 is formed at a position where the fastener 14 fixed to the backing plate 1 can come into contact with the hook-shaped portion 6 at the lower portion of the outer peripheral side surface 9 of the sputtering target 2. do. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. However, it is necessary to provide the fastener 14 at a position where it comes into contact with the hook-shaped portion 6.

(Step 2)
As shown in FIG. 19C, the sputtering target 2 and the backing plate 1 are arranged so that the plate surface 3 and the target back surface 8 face each other.

(Step 3)
Next, as shown in FIG. 19D, the hook-shaped portion 6 formed on the fastener 14 and the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 are brought into contact with each other. At this time, it is preferable that the bottom portion of the fastener 14 that covers the target back surface 8 of the sputtering target 2 comes into contact with the back surface 8 of the sputtering target 2. Next, as shown in FIG. 19E, the sputtering target 2 and the fastener are arranged so that the fastener 14 is arranged on the plate surface 3 and the hook receiving portion 10 and the hook-shaped portion 6 face each other. 14 and are arranged.

(Step 4)
Next, in FIG. 19E, by fixing the fastener 14 to the plate surface 3 of the backing plate 1 in the arrangement state of the step 3, the movement of the sputtering target 2 in the side surface direction is suppressed, and the sputtering target 2 is suppressed. Since the movement of the backing plate 1 in the thickness direction is suppressed, the bonding strength between the backing plate 1 and the sputtering target 2 can be secured. As a means for fixing the fastener 14 to the plate surface 3 of the backing plate 1, in addition to fixing by screwing, a joining means such as diffusion joining or welding can be used.

[6th example of manufacturing method]
(Step 1)
Next, a method for manufacturing the sputtering target-backing plate junction 300 shown in FIG. 9 will be described with reference to FIG. 20. The method for manufacturing the sputtering target-backing plate joint 300 according to the present embodiment is as follows: first, as shown in FIG. 20 (A), a backing plate 1 having a plate surface 3, a plate back surface 4, and a plate side surface 5 and a target. A sputtering target 2 having a surface 7, a target back surface 8 facing the plate surface 3 of the backing plate, and an outer peripheral side surface 9 is prepared. Next, as shown in FIG. 20B, a recess 17 having a recess bottom surface 15 and a recess side surface 16 for fitting the target back surface 8 of the sputtering target 2 into the plate surface 3 of the backing plate 1 is formed. At this time, the size of the recessed bottom surface 15 of the backing plate 1 needs to take into consideration the width of the hook-shaped portion 6 formed on the recessed side surface 16 of the backing plate 1. As a means for forming the recess 17 of the backing plate 1, it can be performed by cutting using a lathe or the like. The bottom surface 15 of the recess of the backing plate 1 preferably comes into contact with the back surface 8 of the target of the sputtering target 2 when the backing plate 1 and the sputtering target 2 are fixed. Next, as shown in FIG. 20B, the recess of the backing plate 1 is recessed in consideration of the height of the recess side surface 16 of the backing plate 1 and the width of the hook-shaped portion 6 formed on the recess side surface 16 of the backing plate 1. The lower part of the outer peripheral side surface 9 of the sputtering target 2 is removed to the extent that the hook-shaped portion 6 formed on the side surface 16 and the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can come into contact with each other. As a means for removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, a cutting process using a lathe or the like can be performed. The outer periphery of the removed portion is also defined as the outer peripheral side surface 9. Next, as shown in FIG. 20 (C), a hook-shaped portion 6 is formed on the recessed side surface 16 of the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the recessed side surface 16 of the backing plate 1 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, sputtering may be provided. It may be partially provided with respect to the outer peripheral side surface 9 of the target 2. Next, as shown in FIG. 20 (C), a hook receiving portion 10 is formed at a position where the backing plate 1 can come into contact with the hook-shaped portion 6 of the concave side surface 16 at the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. Although it may be partially provided in, it is necessary to provide it at a position where it comes into contact with the hook-shaped portion 6.

(Step 2)
Next, as shown in FIG. 20 (D), the backing plate 1 is heated and thermally expanded to such an extent that the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook-shaped portion 6 of the backing plate 1. At this time, if the purpose of inserting the lower portion of the outer peripheral side surface 9 of the sputtering target 2 into the inside of the hook-shaped portion 6 of the backing plate 1 can be achieved, the sputtering target 2 is heated while the backing plate 1 is being heated. May be good. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), a heating method using a hot plate, or the like. When the intermediate layer is provided at the interface between the backing plate 1 and the sputtering target 2, it is preferable to provide the intermediate layer in the process of FIG. 20 (D) or before and after the process of FIG. 20 (D), in other words, FIG. 20 (C). It is preferable to form the intermediate layer in the process between FIG. 20 (D), FIG. 20 (D), or the process between FIGS. 20 (D) and 20 (E) (in FIG. 20). Not shown).

(Step 3)
Next, as shown in FIG. 20 (E), the lower portion of the outer peripheral side surface 9 of the sputtering target 2 is inserted inside the hook-shaped portion 6 of the backing plate 1, and the target back surface 8 of the sputtering target 2 and the recess of the backing plate 1 are recessed. The bottom surfaces 15 are aligned, and the hook-shaped portion 10 of the sputtering target 2 and the hook-shaped portion 6 of the backing plate 1 are arranged so as to face each other. At this time, as long as the hook-shaped portion 6 of the backing plate 1 and the hook receiving portion 10 of the sputtering target 2 are not deformed, pressure may be applied from the target surface 7 of the sputtering target 2 toward the backing plate 1.

(Step 4)
Next, as shown in FIG. 20 (F), the backing plate 1 is cooled and heat-shrinked, and the hook receiving portion 10 of the sputtering target 2 and the hook-shaped portion 6 of the backing plate 1 are brought into contact with each other to bring the sputtering target into contact with each other. Since the movement of the backing plate 2 in the side surface direction is suppressed and the movement of the sputtering target 2 in the thickness direction is suppressed, the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured. Cooling is performed while adjusting the temperature by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or a heating method using a hot plate. Although it can be performed, the heating performed by the hot press sintering method (HP), the hot isotropic pressure sintering method (HIP), the discharge plasma sintering method (SPS), the heating method using a hot plate, etc. is stopped. Then, it may be naturally cooled.

(Additional step after step 4)
If it is desired to further secure the adhesion between the backing plate 1 and the sputtering target 2, after the step 4, the target surface 7 of the sputtering target 2 is pressed against the backing plate 1, or the sputtering target 2 and the backing plate 1 are heated. The step of pressing the sputtering target 2 from the target surface 7 to the backing plate 1 and the step of cooling the sputtering target 2 and the backing plate 1 may be performed once as a set or repeated twice or more. Further, the size of the bottom surface 15 of the recess of the backing plate 1, the amount to be removed from the lower portion of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook-shaped portion 6, the position of the hook receiving portion 10, and the like are adjusted to form the hook shape of the backing plate 1. The pressure may be applied from the portion 6 side to the hook receiving portion 10 side of the sputtering target 2, or the pressing may be applied from the target back surface 8 of the sputtering target 2 to the concave bottom surface 15 of the backing plate 1.

[7th example of manufacturing method]
(Step 1)
Next, with reference to FIG. 21, a method for manufacturing a joint body 301 having a structure similar to that of the sputtering target-backing plate joint body 300 shown in FIG. 9 and using the fastener 14 will be described. .. The method for manufacturing the sputtering target-backing plate joint 301 according to the present embodiment is as follows: first, as shown in FIG. 21 (A), a backing plate 1 having a plate surface 3, a plate back surface 4, and a plate side surface 5 and a target. A sputtering target 2 and a fastener 14 having a surface 7, a target back surface 8 facing the plate surface 3 of the backing plate 1, and an outer peripheral side surface 9 are prepared. Next, as shown in FIG. 21B, a recess 17 having a recess bottom surface 15 and a recess side surface 16 for fitting the target back surface 8 of the sputtering target 2 is formed on the plate surface 3 of the backing plate 1. At this time, it is necessary to consider the width of the fastener 14 for the size of the recessed bottom surface 15 of the backing plate 1. As a means for forming the recess 17 of the backing plate 1, it can be performed by cutting using a lathe or the like. The bottom surface 15 of the recess of the backing plate 1 preferably comes into contact with the back surface 8 of the target of the sputtering target 2 when the backing plate 1 and the sputtering target 2 are fixed. Next, as shown in FIG. 21B, the height and width of the recessed side surface 16 of the backing plate 1 and the height and width of the fastener 14 fixed to the recessed bottom surface 15 or the recessed side surface 16 of the backing plate 1 are taken into consideration. , The sputtering target 2 to the extent that the hook-shaped portion 6 formed on the fastener 14 fixed to the recess 17 of the backing plate 1 and the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can come into contact with each other. Remove the lower part of the outer peripheral side surface 9. As a means for removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, a cutting process using a lathe or the like can be performed. The outer periphery of the removed portion is also defined as the outer peripheral side surface 9. Next, as shown in FIG. 21B, the hook-shaped portion 6 is attached to the fastener 14 fixed to the concave bottom surface 15 or the concave side surface 16 of the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. Form. The hook-shaped portion 6 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the fastener 14 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be provided partially with respect to the side surface 9. Next, as shown in FIG. 21C, the outer periphery of the sputtering target 2 is at a position where it can come into contact with the hook-shaped portion 6 formed on the fastener 14 fixed to the concave bottom surface 15 or the concave side surface 16 of the backing plate 1. A hook receiving portion 10 is formed at the lower portion of the side surface 9. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. However, it is necessary to provide the fastener 14 at a position where it comes into contact with the hook-shaped portion 6. Next, in consideration of contacting the hook-shaped portion 6 formed on the fastener 14 with the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2, the concave bottom surface 15 or the concave portion of the backing plate 1 The fastener 14 is fixed to the side surface 16. As a means for fixing the fastener 14 to the concave bottom surface 15 or the concave side surface 16 of the backing plate 1, it can be fixed by screwing, diffusion joining, welding or the like.

(Step 2)
Next, as shown in FIG. 21 (D), the backing plate 1 is heated to such an extent that the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1. And thermally expand. At this time, if the purpose of inserting the lower portion of the outer peripheral side surface 9 of the sputtering target 2 into the inside of the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 can be achieved, sputtering is performed while the backing plate 1 is being heated. The target 2 may be heated. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), a heating method using a hot plate, or the like. When the intermediate layer is provided at the interface between the backing plate 1 and the sputtering target 2, it is preferable to provide the intermediate layer in the process of FIG. 21 (D) or before and after the process of FIG. 21 (D), in other words, FIG. 21 (C). It is preferable to form the intermediate layer in the process between FIG. 21 (D), FIG. 21 (D), or the process between FIGS. 21 (D) and 21 (E) (in FIG. 21). Not shown).

(Step 3)
Next, as shown in FIG. 21 (E), the lower portion of the outer peripheral side surface 9 of the sputtering target 2 is inserted inside the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1, and the back surface 8 of the target of the sputtering target 2 is inserted. And the bottom surface 15 of the recess of the backing plate 1 are aligned with each other, and the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 is arranged so as to face each other with the hook receiving portion 10 of the sputtering target 2. At this time, if the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 and the hook receiving portion 10 of the sputtering target 2 are not deformed, the pressing is applied from the target surface 7 of the sputtering target 2 toward the backing plate 1. May be added.

(Step 4)
Next, as shown in FIG. 21 (F), the backing plate 1 is cooled and heat-shrinked, and the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 is brought into contact with the hook receiving portion 10 of the sputtering target 2. By doing so, the movement of the sputtering target 2 in the side surface direction is suppressed and the movement of the sputtering target 2 in the thickness direction is suppressed, so that the bonding strength between the backing plate 1 and the sputtering target 2 can be secured. Cooling is performed while adjusting the temperature by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or a heating method using a hot plate. Although it can be performed, the heating performed by the hot press sintering method (HP), the hot isotropic pressure sintering method (HIP), the discharge plasma sintering method (SPS), the heating method using a hot plate, etc. is stopped. Then, it may be naturally cooled.

(Additional step after step 4)
If it is desired to further secure the adhesion between the backing plate 1 and the sputtering target 2, after the step 4, the target surface 7 of the sputtering target 2 is pressed against the backing plate 1, or the sputtering target 2 and the backing plate 1 are heated. The step of pressing the sputtering target 2 from the target surface 7 to the backing plate 1 and the step of cooling the sputtering target 2 and the backing plate 1 may be performed once as a set or repeated twice or more. Further, the size of the bottom surface 15 of the recess of the backing plate 1, the amount to be removed from the lower part of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook-shaped portion 6, the position of the hook receiving portion 10, and the like were adjusted and installed on the backing plate 1. Pressing may be applied from the hook-shaped portion 6 side of the fastener 14 to the hook receiving portion 10 side of the sputtering target 2, and the pressing is applied from the target back surface 8 of the sputtering target 2 to the recessed bottom surface 15 of the backing plate 1. You may.

[8th example of manufacturing method]
(Step 1)
Next, with reference to FIG. 22, a method for manufacturing a bonded body 401 having a structure similar to that of the sputtering target-backing plate joint body 400 shown in FIG. 10 and without using a fastener will be described. The method for manufacturing the sputtering target-backing plate joint 401 according to the present embodiment is as follows: first, as shown in FIG. 22 (A), a backing plate 1 having a plate surface 3, a plate back surface 4, and a plate side surface 5 and a target. A sputtering target 2 having a surface 7, a target back surface 8 facing the plate surface 3 of the backing plate, and an outer peripheral side surface 9 is prepared. Next, as shown in FIG. 22B, a recess 17 having a recess bottom surface 15 and a recess side surface 16 for fitting the target back surface 8 of the sputtering target 2 is formed on the plate surface 3 of the backing plate 1. At this time, the size of the recessed bottom surface 15 of the backing plate 1 needs to take into consideration the width of the hook-shaped portion 6 formed on the recessed side surface 16 of the backing plate 1. As a means for forming the recess 17 of the backing plate 1, it can be performed by cutting using a lathe or the like. The bottom surface 15 of the recess of the backing plate 1 preferably comes into contact with the back surface 8 of the target of the sputtering target 2 when the backing plate 1 and the sputtering target 2 are fixed. Next, as shown in FIG. 22C, a hook-shaped portion 6 is formed on the recessed side surface 16 of the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the recessed side surface 16 of the backing plate 1 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, sputtering may be provided. It may be partially provided with respect to the outer peripheral side surface 9 of the target 2. Next, as shown in FIG. 22C, a hook receiving portion 10 is formed at a position where the backing plate 1 can come into contact with the hook-shaped portion 6 of the concave side surface 16 at the lower portion of the outer peripheral side surface 9 of the sputtering target 2. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. Although it may be partially provided in, it is necessary to provide it at a position where it comes into contact with the hook-shaped portion 6.

(Step 2)
Next, as shown in FIG. 22D, the backing plate 1 is heated and thermally expanded to such an extent that the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook-shaped portion 6 of the backing plate 1. At this time, if the purpose of inserting the lower portion of the outer peripheral side surface 9 of the sputtering target 2 into the inside of the hook-shaped portion 6 of the backing plate 1 can be achieved, the sputtering target 2 is heated while the backing plate 1 is being heated. May be good. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), a heating method using a hot plate, or the like. When the intermediate layer is provided at the interface between the backing plate 1 and the sputtering target 2, it is preferable to provide the intermediate layer in the process of FIG. 22 (D) or before and after the process of FIG. 22 (D), in other words, FIG. 22 (C). It is preferable to form an intermediate layer in the process between FIG. 22 (D), while performing FIG. 22 (D), or in the process between FIGS. 22 (D) and 22 (E) (FIG. 22). Not shown).

(Step 3)
Next, as shown in FIG. 22 (E), the lower portion of the outer peripheral side surface 9 of the sputtering target 2 is inserted inside the hook-shaped portion 6 of the backing plate 1, and the target back surface 8 of the sputtering target 2 and the recess of the backing plate 1 are recessed. The bottom surfaces 15 are aligned, and the hook receiving portion 10 of the sputtering target 2 and the hook-shaped portion 6 of the backing plate 1 are arranged so as to face each other. At this time, as long as the hook-shaped portion 6 of the backing plate 1 and the hook receiving portion 10 of the sputtering target 2 are not deformed, pressure may be applied from the target surface 7 of the sputtering target 2 toward the backing plate 1.

(Step 4)
Next, as shown in FIG. 22F, the backing plate 1 is cooled and heat-shrinked, and the hook receiving portion 10 of the sputtering target 2 and the hook-shaped portion 6 of the backing plate 1 are brought into contact with each other to bring the sputtering target into contact with each other. Since the movement of the backing plate 2 in the side surface direction is suppressed and the movement of the sputtering target 2 in the thickness direction is suppressed, the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured. Cooling is performed while adjusting the temperature by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or a heating method using a hot plate. Although it can be performed, the heating performed by the hot press sintering method (HP), the hot isotropic pressure sintering method (HIP), the discharge plasma sintering method (SPS), the heating method using a hot plate, etc. is stopped. Then, it may be naturally cooled.

(Additional step after step 4)
If it is desired to further secure the adhesion between the backing plate 1 and the sputtering target 2, after the step 4, the target surface 7 of the sputtering target 2 is pressed against the backing plate 1, or the sputtering target 2 and the backing plate 1 are heated. The step of pressing the sputtering target 2 from the target surface 7 to the backing plate 1 and the step of cooling the sputtering target 2 and the backing plate 1 may be performed once as a set or repeated twice or more. Further, the size of the bottom surface 15 of the recess of the backing plate 1, the position of the hook-shaped portion 6, the position of the hook-shaped portion 10, and the like are adjusted, and the hook-shaped portion 6 side of the backing plate 1 to the hook-shaped portion 10 side of the sputtering target 2. The pressure may be applied to the bottom surface 15 of the recess of the backing plate 1 from the back surface 8 of the target of the sputtering target 2.

[9th example of manufacturing method]
(Step 1)
Next, a method for manufacturing the sputtering target-backing plate junction 400 shown in FIG. 10 will be described with reference to FIG. 23. The method for manufacturing the sputtering target-backing plate joint 400 according to the present embodiment is as follows: first, as shown in FIG. 23 (A), a backing plate 1 having a plate surface 3, a plate back surface 4, and a plate side surface 5 and a target. A sputtering target 2 and a fastener 14 having a surface 7, a target back surface 8 facing the plate surface 3 of the backing plate, and an outer peripheral side surface 9 are prepared. Next, as shown in FIG. 23B, a recess 17 having a recess bottom surface 15 and a recess side surface 16 for fitting the target back surface 8 of the sputtering target 2 is formed on the plate surface 3 of the backing plate 1. At this time, it is necessary to consider the width of the fastener 14 for the size of the recessed bottom surface 15 of the backing plate 1. As a means for forming the recess 17 of the backing plate 1, it can be performed by cutting using a lathe or the like. The bottom surface 15 of the recess of the backing plate 1 preferably comes into contact with the back surface 8 of the target of the sputtering target 2 when the backing plate 1 and the sputtering target 2 are fixed. Next, as shown in FIG. 23B, the hook-shaped portion 6 is attached to the fastener 14 fixed to the concave bottom surface 15 or the concave side surface 16 of the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2. Form. The hook-shaped portion 6 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the fastener 14 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be provided partially with respect to the side surface 9. Next, as shown in FIG. 23B, the outer periphery of the sputtering target 2 is at a position where it can come into contact with the hook-shaped portion 6 formed on the fastener 14 fixed to the concave bottom surface 15 or the concave side surface 16 of the backing plate 1. A hook receiving portion 10 is formed at the lower portion of the side surface 9. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. However, it is necessary to provide the fastener 14 at a position where it comes into contact with the hook-shaped portion 6. Next, as shown in FIG. 23C, considering that the hook-shaped portion 6 formed on the fastener 14 and the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target are brought into contact with each other. The fastener 14 is fixed to the concave bottom surface 15 or the concave side surface 16 of the backing plate 1. As a means for fixing the fastener 14 to the concave bottom surface 15 or the concave side surface 16 of the backing plate 1, it can be fixed by screwing, diffusion joining, welding or the like.

(Step 2)
Next, as shown in FIG. 23 (D), the backing plate 1 is heated to such an extent that the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1. And thermally expand. At this time, if the purpose of inserting the lower portion of the outer peripheral side surface 9 of the sputtering target 2 into the inside of the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 can be achieved, sputtering is performed while the backing plate 1 is being heated. The target 2 may be heated. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), a heating method using a hot plate, or the like. When the intermediate layer is provided at the interface between the backing plate 1 and the sputtering target 2, it is preferable to provide the intermediate layer in the process of FIG. 23 (D) or before and after the process of FIG. 23 (D), in other words, FIG. 23 (C). It is preferable to form the intermediate layer in the step between FIG. 23 (D), while performing FIG. 23 (D), or in the step between FIGS. 23 (D) and 23 (E) (in FIG. 23). Not shown).

(Step 3)
Next, as shown in FIG. 23 (E), the lower portion of the outer peripheral side surface 9 of the sputtering target 2 is inserted inside the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1, and the back surface 8 of the target of the sputtering target 2 is inserted. And the bottom surface 15 of the recess of the backing plate 1 are aligned with each other, and the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 is arranged so as to face each other with the hook receiving portion 10 of the sputtering target 2. At this time, if the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 and the hook receiving portion 10 of the sputtering target 2 are not deformed, the pressing is applied from the target surface 7 of the sputtering target 2 toward the backing plate 1. May be added.

(Step 4)
Next, as shown in FIG. 23 (F), the backing plate 1 is cooled and heat-shrinked, and the hook-shaped portion 6 of the fastener 14 installed on the backing plate 1 is brought into contact with the hook receiving portion 10 of the sputtering target 2. By doing so, the movement of the sputtering target 2 in the side surface direction is suppressed and the movement of the sputtering target 2 in the thickness direction is suppressed, so that the bonding strength between the backing plate 1 and the sputtering target 2 can be secured. Cooling is performed while adjusting the temperature by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or a heating method using a hot plate. Although it can be performed, the heating performed by the hot press sintering method (HP), the hot isotropic pressure sintering method (HIP), the discharge plasma sintering method (SPS), the heating method using a hot plate, etc. is stopped. Then, it may be naturally cooled.

[10th example of manufacturing method]
(Step 1)
Next, another embodiment of the method for manufacturing the sputtering target-backing plate junction 400 shown in FIG. 10 will be described with reference to FIG. 24. In the method for manufacturing the sputtering target-backing plate joint 400 according to the present embodiment, first, as shown in FIG. 24 (A), a backing plate 1 having a plate surface 3, a plate back surface 4 and a plate side surface 5 and a target A sputtering target 2 and a fastener 14 having a surface 7, a target back surface 8 facing the plate surface 3, and an outer peripheral side surface 9 are prepared. Next, as shown in FIG. 24B, a recess 17 having a recess bottom surface 15 and a recess side surface 16 for fitting the target back surface 8 of the sputtering target 2 is formed on the plate surface 3 of the backing plate 1. At this time, it is necessary to consider the width of the fastener 14 for the size of the recessed bottom surface 15 of the backing plate 1. As a means for forming the recess 17 of the backing plate 1, it can be performed by cutting using a lathe or the like. The bottom surface 15 of the recess of the backing plate 1 preferably comes into contact with the back surface 8 of the target of the sputtering target 2 when the backing plate 1 and the sputtering target 2 are fixed. Next, as shown in FIG. 24B, the hook-shaped portion 6 is formed on the fastener 14 fixed to the backing plate 1 so as to face the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 of the fastener 14 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the fastener 14 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be partially provided with respect to the side surface 9. Next, as shown in FIG. 24B, a hook receiving portion 10 is formed on the outer peripheral side surface 9 of the sputtering target 2 at a position where it can come into contact with the hook-shaped portion 6 of the fastener 14 fixed to the backing plate 1. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. However, it is necessary to provide the fastener 14 at a position where it comes into contact with the hook-shaped portion 6.

(Step 2)
As shown in FIG. 24C, the sputtering target 2 and the backing plate 1 are arranged so that the plate surface 3 and the target back surface 8 face each other.

(Step 3)
Next, as shown in FIG. 24C, the hook-shaped portion 6 formed on the fastener 14 and the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target are brought into contact with each other. Next, as shown in FIG. 24D, the sputtering target 2 and the fastener are arranged so that the fastener 14 is arranged on the plate surface 3 and the hook receiving portion 10 and the hook-shaped portion 6 face each other. 14 and are arranged.

(Step 4)
Next, in FIG. 24D, by fixing the fastener 14 to the recessed bottom surface 15 or the recessed side surface 16 of the backing plate 1 in the arrangement state of the step 3, the movement of the sputtering target 2 in the side surface direction is suppressed. Since the movement of the sputtering target 2 in the thickness direction is suppressed, the bonding strength between the backing plate 1 and the sputtering target 2 can be secured. As a means for fixing the fastener 14 to the plate surface 3 of the backing plate 1, in addition to fixing by screwing, a joining means such as diffusion joining or welding can be used.

(Additional step after step 4)
If it is desired to further secure the adhesion between the backing plate 1 and the sputtering target 2, after the step 4, the target surface 7 of the sputtering target 2 is pressed against the backing plate 1, or the sputtering target 2 and the backing plate 1 are heated. The step of pressing the sputtering target 2 from the target surface 7 to the backing plate 1 and the step of cooling the sputtering target and the backing plate may be performed once as a set or repeated twice or more.

[11th example of manufacturing method]
(Step 1)
Next, with reference to FIG. 25, a method for manufacturing the junction 402 having a structure similar to the sputtering target-backing plate junction 400 shown in FIG. 10 will be described. The method for manufacturing the sputtering target-backing plate joint 402 according to the present embodiment is as follows: first, as shown in FIG. 25 (A), a backing plate 1 having a plate surface 3, a plate back surface 4 and a plate side surface 5 and a target. A sputtering target 2 and a fastener 14 having a surface 7, a target back surface 8 facing the plate surface 3, and an outer peripheral side surface 9 are prepared. At this time, the bottom portion of the fastener 14 has a shape capable of covering the target back surface 8 of the sputtering target 2. Next, as shown in FIG. 25B, a recess 17 having a recess bottom surface 15 and a recess side surface 16 for fitting the target back surface 8 of the sputtering target 2 is formed on the plate surface 3 of the backing plate 1. At this time, it is necessary to consider the width of the fastener 14 for the size of the recessed bottom surface 15 of the backing plate 1. As a means for forming the recess 17 of the backing plate 1, it can be performed by cutting using a lathe or the like. The bottom surface 15 of the recess of the backing plate 1 preferably comes into contact with the back surface 8 of the target of the sputtering target 2 when the backing plate 1 and the sputtering target 2 are fixed. Next, as shown in FIG. 25B, the hook-shaped portion 6 is formed on the fastener 14 fixed to the backing plate 1 so as to face the outer peripheral side surface 9 of the sputtering target 2. The hook-shaped portion 6 of the fastener 14 can be formed by cutting using a lathe or the like. The hook-shaped portion 6 of the fastener 14 may be provided on the entire circumference with respect to the outer peripheral side surface 9 of the sputtering target 2, and if the sputtering target 2 does not peel off from the backing plate 1, the outer periphery of the sputtering target 2 may be provided. It may be provided partially with respect to the side surface 9. Next, as shown in FIG. 25 (B), a hook receiving portion 10 is formed at the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can come into contact with the hook-shaped portion 6 of the fastener 14 fixed to the backing plate 1. do. The hook receiving portion 10 can be formed by cutting using a lathe or the like. The hook receiving portion 10 of the sputtering target 2 may be provided on the entire outer peripheral side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 may be provided. However, it is necessary to provide the fastener 14 at a position where it comes into contact with the hook-shaped portion 6.

(Step 2)
As shown in FIG. 25C, the sputtering target 2 and the backing plate 1 are arranged so that the plate surface 3 and the target back surface 8 face each other.

(Step 3)
Next, as shown in FIG. 25 (C), the hook-shaped portion 6 formed on the fastener 14 and the hook receiving portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target are brought into contact with each other. At this time, it is preferable that the bottom portion of the fastener 14 that covers the target back surface 8 of the sputtering target 2 comes into contact with the back surface 8 of the sputtering target 2. Next, as shown in FIG. 25 (D), the fastener 14 is arranged on the plate surface 3, the fastener 14 is fitted into the recess 17, and the hook receiving portion 10 and the hook-shaped portion 6 face each other. As such, the sputtering target 2 and the fastener 14 are arranged.

(Step 4)
Next, in FIG. 25D, by fixing the fastener 14 to the recessed bottom surface 15 or the recessed side surface 16 of the backing plate 1 in the arrangement state of the step 3, the movement of the sputtering target 2 in the side surface direction is suppressed. Since the movement of the sputtering target 2 in the thickness direction is suppressed, the bonding strength between the backing plate 1 and the sputtering target 2 can be secured. As a means for fixing the fastener 14 to the plate surface 3 of the backing plate 1, in addition to fixing by screwing, a joining means such as diffusion joining or welding can be used.

(First example of recovery method of sputtering target)
A case where the sputtering target-backing plate joint according to the present embodiment is attached to the sputtering apparatus and used, and the sputtering target is exhausted will be described. The method for recovering the sputtering target according to the present embodiment includes a step A in which the sputtering target-backing plate joint according to the present embodiment is heated and thermally expanded until the hook-shaped portion 6 is separated from the hook receiving portion 10, and the sputtering target 2. The step B is to remove the sputtering target 2 from the backing plate 1 and recover the sputtering target 2 from the sputtering target-backing plate joint. The form of removing the sputtering target 2 includes a form of removing the sputtering target 2 as it is and a form of removing the sputtering target 2 by applying an impact.

(Second example of recovery method of sputtering target)
The method of recovering the sputtering target in the sputtering target-backing plate joint in which the fastener 14 is fixed to the backing plate 1 is to remove the fastener 14 from the backing plate 1 and remove the sputtering target 2 from the sputtering target-backing plate joint. It has a step C of recovery. The form of removing the sputtering target 2 includes a form of removing the sputtering target 2 as it is and a form of removing the sputtering target 2 by applying an impact.

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not construed as being limited to the examples.

(Example 1)
A bonded body corresponding to FIG. 9 is produced. First, a ruthenium sputtering target 2 of Φ156 × 9t (unit: mm) prepared by a melting method and a brass backing plate 1 of Φ240 × 20t (unit: mm) were prepared. The coefficient of linear expansion is 6.75 × ^10-6 / ° C for ruthenium and 21.2 × ^10-6 / ° C for brass. Next, on the outer peripheral side surface 9 of the sputtering target 2, a 0.5 mm annular recess serving as a hook receiving portion 10 was formed by a lathe along the circumferential direction of the side surface. As a result, an annular convex portion that is convex with respect to the bottom surface of the annular recess is formed on the outer peripheral side surface 9 of the sputtering target 2. Next, a recess 17 having a depth of 4 mm, which is 0.4 mm smaller than the diameter of the sputtering target 2, is machined at a position where the sputtering target 2 of the backing plate 1 is installed. Further, a 0.5 mm hook receiving portion 10 is formed on the inner peripheral side surface 16 of the recess of the backing plate at a position corresponding to the hook-shaped portion 6 of the sputtering target 2. Next, the bottom surface 15 of the recess of the backing plate 1 was filled with a 0.1 mm thick Ni plate material and a small amount of In powder. This trace amount of In powder is filled in the gap around the Ni plate material. Next, the sputtering target 2 was installed on the recess 17 of the backing plate 1. Next, the temperature is raised to 250 ° C. in a reduced pressure atmosphere of 10 Pa or less using a discharge plasma sintering machine, and then the sputtering target 2 is filled in the recess 17 of the backing plate. After filling, the temperature was further raised to 400 ° C. while pressurizing from the target surface 7 of the sputtering target 2 at 10 MPa, diffusion bonding was performed by holding for 1 hour, and then cooling was performed for contact. The result is shown in FIG. The bonded body has a structure in which the uneven portion of the outer peripheral side surface 9 of the sputtering target 2 and the uneven portion of the concave inner peripheral side surface 16 of the backing plate 1 are fitted to each other. As shown in FIG. 26, the outer peripheral side surface 9 of the sputtering target 2 and the inner peripheral side surface 16 of the recess 17 of the backing plate 1 are fixed by contact with each other, and the target back surface 8 is also filled with Ni and In without gaps to provide heat conduction. Although diffusion bonding was performed well, cracking of the sputtering target 2 did not occur.

(Comparative Example 1)
A Φ70 × 7t (unit: mm) Al-30 atomic% Sc sputtering target having a bending strength of 138 MPa and a backing plate of A6061 which is a Φ80 × 8t (unit: mm) Al alloy were prepared. The coefficient of linear expansion is 13.5 × ^10-6 / ° C for Al-30 atomic% Sc and 23.6 × ^10-6 / ° C for A6061. Next, an Al-30 atomic% Sc sputtering target was placed on the backing plate 1. Next, using a discharge plasma sintering machine, the temperature was raised to 500 ° C. in a vacuum atmosphere, and then diffusion bonding was performed by holding for 1 hour while pressurizing from the target surface of the sputtering target at 10 MPa. The result is shown in FIG. 27. As shown in FIG. 27, the sputtering target and the backing plate are joined, but the difference in the coefficient of linear expansion is large, so that the sputtering target is cracked due to the stress of compression when the backing plate is cooled.

(Comparative Example 2)
A Φ70 × 7t (unit: mm) Al-30 atomic% Sc sputtering target having a bending strength of 138 MPa and a backing plate of aluminum bronze which is an Al alloy of Φ80 × 8t (unit: mm) were prepared. The coefficient of linear expansion is 13.5 × ^10-6 / ° C for Al-30 atomic% Sc and 16.5 × ^10-6 / ° C for aluminum bronze. Next, an Al-30 atomic% Sc sputtering target was placed on the backing plate 1. Next, using a discharge plasma sintering machine, the temperature was raised to 500 ° C. in a vacuum atmosphere, and then diffusion bonding was performed by holding for 1 hour while pressurizing from the target surface of the sputtering target at 10 MPa. The result is shown in FIG. As shown in FIG. 28, the linear expansion coefficient of the sputtering target and the linear expansion coefficient of the backing plate were made closer to each other than in Comparative Example 1, but since there is a difference in the linear expansion coefficient between the sputtering target and the backing plate, the sputtering target 2 Was cracked by the stress of compression, and the sputtering target was peeled off from the backing plate due to insufficient bonding to the backing plate.

(Comparative Example 3)
A ruthenium sputtering target of Φ194 × 10t (unit: mm) and a backing plate of oxygen-free copper of Φ240 × 20t (unit: mm) were prepared by a sintering method. The coefficient of linear expansion is 6.75 × ^10-6 / ° C for ruthenium and 16.2 × ^10-6 / ° C for oxygen-free copper. Next, a ruthenium sputtering target was placed on the backing plate. Next, using a discharge plasma sintering machine, the temperature was raised to 700 ° C. in a vacuum atmosphere, and then diffusion bonding was performed by holding for 1 hour while pressurizing from the target surface of the sputtering target at 10 MPa. The result is shown in FIG. As shown in FIG. 29, due to the difference in linear expansion coefficient between the sputtering target and the backing plate, the sputtering target was cracked due to the stress of compression.

(Comparative Example 4)
A ruthenium sputtering target of Φ180 × 5t (unit: mm) and a container of 15 mm thick called CAN made of oxygen-free copper used as a backing plate with a recess of Φ180.1 mm and a depth of 10 mm formed by the sintering method. Prepared. The coefficient of linear expansion is 6.75 × ^10-6 / ° C for ruthenium and 16.2 × ^10-6 / ° C for oxygen-free copper. Next, after the sputtering target was encapsulated in the CAN, a Φ180 × 5t lid made of oxygen-free copper was placed on the sputtering target, and the inside of the CAN was evacuated and sealed. Next, using a HIP device, the temperature was raised to 500 ° C., and then CAN was pressurized at 100 MPa to perform diffusion bonding. At this time, the container was pressurized from the entire surface, and the container and the sputtering target were diffusion-bonded. After diffusion bonding, the sputtering target 2 and the backing plate were carved out using a lathe. The result is shown in FIG. As shown in FIG. 30, although the diffusion bonding was completed, the sputtering target was subjected to the stress of compression due to the difference in the linear expansion coefficient between the sputtering target and the backing plate, and fine cracks were formed from the central portion toward the outer periphery. It occurred radially and cracked.

50,60,100,101,200,201,202,300,301,400,401,402,500,501,600,601 Sputtering target-backing plate joint 1 backing plate 2 sputtering target 3 plate surface of backing plate 4 Back side of the plate of the backing plate 5 Side of the backing plate 6 Hook-shaped part 7 Target side of the sputtering target 8 Back side of the target of the sputtering target 9 Outer side surface of the sputtering target 10 Hook receiving part 11 Screwing point 12 Intermediate layer 12a Interface with backing plate Intermediate layer 12 installed at the interface with the sputtering target Intermediate layer 13 Convex portion 14 provided on the plate surface of the backing plate Fastener 15 Recessed bottom surface of the backing plate 16 Recessed side surface 17 concave portion of the backing plate

Claims

In a sputtering target-backing plate junction in which a sputtering target is bonded to a backing plate.
The backing plate has a plate surface, a plate back surface, and a plate side surface.
The sputtering target has a target surface, a back surface of the target facing the plate surface, and an outer peripheral side surface.
One of the backing plate and the sputtering target further has a hook-shaped portion, and the other has a hook receiving portion, and the hook-shaped portion and the hook receiving portion are in contact with each other.
The hook-shaped portion or the hook receiving portion of the sputtering target is provided on the outer peripheral side surface of the sputtering target, and
A sputtering target-backing plate joint, wherein the sputtering target is fixed to the backing plate by abutting the hook-shaped portion on the hook receiving portion.
The sputtering target-backing plate joint according to claim 1, wherein the backing plate has a convex portion on the plate surface, and the convex portion has the hook-shaped portion or the hook receiving portion.
The sputtering target-backing plate joint according to claim 1, wherein the backing plate has a fastener on the plate surface or the side surface of the plate, and the fastener has a hook-shaped portion or a hook receiving portion. body.
The fastener penetrates into the outer peripheral side surface, leaving a part of the side surface.
The sputtering target-backing plate joint according to claim 3, wherein the fastener is fixed to the backing plate.
The side surface of the fastener protrudes from the outer peripheral side surface,
The sputtering target-backing plate joint according to claim 3, wherein at least the protruding portion of the fastener is fixed to the backing plate.
The backing plate has a recess on the plate surface and has a recess.
The backing plate has fasteners in the recesses.
The fastener has the hook-shaped portion or the hook receiving portion.
At least a portion of the sputtering target and at least a portion of the fastener are fitted into the recess.
The sputtering target-backing plate joint according to claim 1, wherein the fastener is fixed to the recess of the backing plate.
The backing plate has a recess on the plate surface and has a recess.
The backing plate has the hook-shaped portion or the hook receiving portion on the inner peripheral side surface of the recess.
The sputtering target-backing plate joint according to claim 1, wherein a part of the sputtering target is fitted in the recess.
Any of claims 1 to 7, wherein the hook-shaped portion has a first uneven shape portion, and the hook receiving portion has a second uneven shape portion that matches the first uneven shape portion. One of the sputtering target-backing plate joints.
The hook-shaped portion has a hook shape in which the tip of the hook in the direction from the backing plate to the spatter surface is the maximum hooking point, and the hook receiving portion has a hook hole that fits the hook shape. Item 6. The sputtering target-backing plate junction according to any one of Items 1 to 7.
An intermediate layer of 2.5 mm or less is provided at the interface between the sputtering target and the backing plate, and the intermediate layer is a metal of at least one of Ni, Cr, Al, and Cu, or at least Ni, Cr, Al, and Cu. The sputtering target-backing plate joint according to any one of claims 1 to 9, wherein the plate material is made of an alloy containing any one of them, a powder, or a combination of the plate material and the powder.
An intermediate layer of 10 μm or less is provided at the interface between the sputtering target and the backing plate, and the intermediate layer is at least one of Ni, Cr, Al, and Cu, or at least one of Ni, Cr, Al, and Cu. The sputtering target-backing plate junction according to any one of claims 1 to 9, wherein the thin film is made of an alloy containing one kind.
An intermediate layer of 1.0 mm or less is provided at the interface between the sputtering target and the backing plate, and the intermediate layer is made of a metal containing at least one of In and Zn or an alloy containing at least one of In and Zn. The sputtering target-backing plate joint according to any one of claims 1 to 9, wherein the plate material, powder, or a combination of the plate material and the powder is used.
There are two or more intermediate layers at the interface between the sputtering target and the backing plate, and the intermediate layer is
A plate or powder made of at least one metal of Ni, Cr, Al or Cu of 2.5 mm or less or an alloy containing at least one of Ni, Cr, Al or Cu, or a combination of the plate material and the powder.
A thin film made of a metal containing at least one of Ni, Cr, Al, and Cu of 10 μm or less or an alloy containing at least one of Ni, Cr, Al, and Cu, or a thin film.
The claim is characterized by comprising a plate material, a powder, or a combination of the plate material and the powder, which is made of a metal containing at least one of In and Zn of 1.0 mm or less or an alloy containing at least one of In and Zn. The sputtering target-backing plate junction according to any one of 1 to 9.
The sputtering target-backing plate joint according to any one of claims 1 to 13, wherein the material of the sputtering target is an Al—Sc alloy, Ru, Ru alloy, Ir, or Ir alloy.
The sputtering target-backing plate according to any one of claims 1 to 13, wherein the material of the sputtering target is a Li-based oxide, a Co-based oxide, a Ti-based oxide, or an Mg-based oxide. Joined body.
The claim is that the material of the backing plate is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the linear expansion coefficient of the backing plate is 30.0 × 10 -6 / ° C. or less. The sputtering target-backing plate alloy according to any one of 1 to 15.
A backing plate having a plate surface, a plate back surface, a plate side surface, a hook-shaped portion, or a hook receiving portion, and the hook-shaped portion or the hook-shaped portion provided on the target surface, the target back surface, the outer peripheral side surface, and the outer peripheral side surface. Step 1 of preparing a sputtering target having the other side of the hook receiving portion,
Step 2 of heating the backing plate to thermally expand it,
Step 3 of arranging the sputtering target and the backing plate so that the plate surface and the back surface of the target face each other and the hook receiving portion and the hook-shaped portion face each other. ,
It is characterized by having a step 4 of fixing the sputtering target to the backing plate by cooling the sputtering target and the backing plate and bringing the hook-shaped portion into contact with the hook receiving portion. A method for manufacturing a sputtering target-backing plate joint.
After the step 4, the steps of pressing the sputtering target from the target surface to the backing plate or heating the sputtering target and the backing plate and pressing the sputtering target from the target surface to the backing plate, and The method for manufacturing a sputtering target-backing plate joint according to claim 17, wherein the steps of cooling the sputtering target and the backing plate are performed once or twice or more as a set.
A backing plate having a plate surface, a plate back surface, and a plate side surface, a fastener having either a hook-shaped portion or a hook receiving portion, and a hook-shaped portion or the hook-shaped portion on the target surface, the target back surface, the outer peripheral side surface, and the outer peripheral side surface. Step 1 of preparing a sputtering target having the other end of the hook receiving portion, and
Step 2 of arranging the sputtering target and the backing plate so that the plate surface and the back surface of the target face each other.
Step 3 of arranging the fastener on the plate surface or the side surface of the plate, and arranging the sputtering target and the fastener so that the hook receiving portion and the hook-shaped portion face each other.
Step 4 of fixing the fastener to the backing plate in the arrangement state of the step 3 and
A method for producing a sputtering target-backing plate joint.
After the step 4, the steps of pressing the sputtering target from the target surface to the backing plate or heating the sputtering target and the backing plate and pressing the sputtering target from the target surface to the backing plate, and The method for manufacturing a sputtering target-backing plate joint according to claim 19, wherein the steps of cooling the sputtering target and the backing plate are performed once or twice or more as a set.
The step A of heating the sputtering target-backing plate joint according to any one of claims 1 to 16 and thermally expanding the joint until the hook-shaped portion is separated from the hook receiving portion.
A method for recovering a sputtering target, which comprises a step B of removing the sputtering target from the backing plate and recovering the sputtering target from the sputtering target-backing plate joint.
The fastener of the sputtering target-backing plate joint according to claim 3 is fixed to the backing plate.
A method for recovering a sputtering target, which comprises a step C of removing the fastener from the backing plate and recovering the sputtering target from the sputtering target-backing plate joint.