TW202225434A - Sputtering target-backing plate assembly, production method therefor, and sputtering target recovery method - Google Patents

Abstract

The present disclosure provides a sputtering target-backing plate assembly in which, even in the case where a target having a low flexural strength is used or even in the case where the difference in linear expansion coefficient between a target and a backing plate is significantly large, the target can be inhibited from being damaged or detached, and from being tainted due to volatilization of impurities, and detachment and recovery of a target material can be facilitated while suppressing loss of a high-cost material used as the target material. In the assembly according to the present disclosure, one of a backing plate 1 and a sputtering target 2 has a hook-shaped portion 6, and the other has a hook-receiving portion 10. The hook-shaped portion and the hook-receiving portion abut each other. The hook-shaped portion or hook-receiving portion of the sputtering target 2 is provided on an outer circumferential lateral surface 9, and the sputtering target 2 is fixed to the backing plate 1 when the hook-shaped portion 6 abuts the hook-receiving portion 10.

Description

Sputtering target-back plate assembly, method for producing the same, and method for recovering sputtering target

The present invention relates to a preferred sputtering target-backplate assembly for setting in a sputtering device, a method for producing the same, and a method for recovering the sputtering target. The above-mentioned sputtering device is used for HDD (Hard Disk Drive, hard disk drive) disk), semiconductors, etc. manufacturing steps.

In order to install a sputtering target in a sputtering apparatus used in the manufacturing steps of HDDs, semiconductors, etc., a sputtering target-backing bonding in which a sputtering target is joined to a member called a backing plate is generally used body. In the sputtering target material-backing plate joint body, by fixing the backing plate, the sputtering target material is installed in the sputtering apparatus through the backing plate.

The back plate is a member that supports the sputtering target, and is a member responsible for cooling to suppress the temperature rise of the sputtering target caused by exposure to plasma. Made of high material. In addition, the sputtering target and the backing plate must maintain adhesion to achieve thermal conduction.

For the bonding of the sputtering target and the backing plate, the following methods are usually implemented: a bonding method called bonding using a material with a low melting point such as indium or tin and a low vapor pressure under vacuum as an embedded material, or A method of bonding using conductive resin.

However, if the temperature of the sputtering target material is raised above the melting point of indium or tin used as the embedded material, indium or tin may be mixed into the formed film as impurities due to volatilization, and high purity is required. It has become a fatal problem in its use.

In order to solve the problem of bonding, there is a technique of applying relative pressure to the sputtering target and the backing plate without using a low-melting-point metal as an embedded material, and spending time in a state where the temperature is raised to perform diffusion bonding (for example, refer to Patent Documents 1 to 3).

In Patent Document 1, a sputtering target containing tantalum with an allowable stress of 15 to 20 kgf/mm ² is disclosed, and a material whose allowable stress is the same as or higher than that of the sputtering target is used for the back plate. An assembly formed by diffusion bonding of a sputtering target and a backing plate is fabricated, thereby controlling the direction of warpage of the sputtering target caused by thermal expansion and contraction.

In Patent Document 2, it is disclosed that a target material having a melting point of 1000° C. or more, an insert material of one or more kinds selected from metals or alloys with a melting point lower than that of the target material, and a backing plate are subjected to solid-phase diffusion. Bonding, and obtaining a higher adhesion and higher bonding strength with a bonding rate of 100%.

In Patent Document 3, there is disclosed a method of producing an assembly by the following operation. Pressure (UHP) was performed at 400 to 600° C. to heat and compress to form diffusion bonding, and thereafter, the sputtering target and the backing plate were cut. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-183258 [Patent Document 2] Japanese Patent Laid-Open No. 06-108246 [Patent Document 3] Japanese Patent Publication No. 2014-511436

[Problems to be Solved by Invention]

However, as in the invention described in Patent Document 1, when the sputtering target is formed of a material with a low flexural strength, if the difference in the linear expansion coefficient between the sputtering target and the backing plate is greatly different, there is a high temperature The sputtering target may be damaged when it is cooled and thermally shrunk after the diffusion bonding. Therefore, diffusion bonding may be performed at low temperature, but either diffusion bonding cannot be performed or sufficient strength cannot be obtained.

In addition, even if the sputtering target and the backing plate with greatly different linear expansion coefficients are only diffusion-bonded by heating and pressing, when the sputtering target is used, if the temperature rises and falls repeatedly, the bonding interface may deteriorate. The condition of cracking and peeling due to fatigue.

Moreover, in the invention described in Patent Document 2, when the sputtering target is used, when the temperature rises to the melting point of the insert, the insert may melt and the sputtering target may peel off. Such a tendency is likely to occur in the manufacture of semiconductors that use large targets and require high purity.

In addition, in order to reduce the difference in the coefficient of linear expansion, there is also a method to relieve stress, such as inserting a material whose linear expansion coefficient is about the middle value of the sputtering target material and the backing plate, etc., but when metal bonding is performed by bonding or Similarly, when using conductive resin for bonding, volatilization of the insert material occurs, and the problem of contamination of impurities cannot be solved.

Furthermore, in the invention described in Patent Document 3, the sputtering target and the backing plate are processed until a firm diffusion bond is formed. Therefore, the difference between the linear expansion coefficients of the sputtering target and the backing plate is large, and according to the sputtering Depending on the material of the target, cracking of the sputtering target may occur during the diffusion bonding step of the sputtering target.

Therefore, an object of the present invention is to provide a sputtering target-backplate assembly, a method for manufacturing the same, and a method for recovering a sputtering target, which even when using a sputtering target-backplate assembly with a low flexural strength In the case of sputtering targets or when the difference between the linear expansion coefficients of the sputtering target and the backing plate is greatly different, damage and peeling of the sputtering target can be suppressed, and contamination caused by volatilization of impurities can be suppressed. Furthermore, the loss of the expensive material used as the target can be suppressed, and the target can be easily peeled and recovered. [Technical means to solve problems]

As a result of intensive research, the inventors of the present invention have found that the above-mentioned problems can be solved by having a structure in which either a hook-shaped portion or a hook support portion is provided on the back plate, and the sputtering target The other of the hook-shaped part or the hook support part is provided on the outer peripheral side surface, and the hook-shaped part is abutted on the hook support part, and the sputtering target is fixed to the backing plate. That is, the sputtering target-back plate bonding system of the present invention is formed by bonding a sputtering target to a backing plate, wherein the backing plate has a plate surface, a plate back surface, and a plate side surface, and the sputtering target material is characterized in that It has a target surface, a target back surface opposite to the plate surface, and an outer peripheral side surface, either one of the back plate and the sputtering target further has a hook-shaped portion, and the other one further has a hook support portion, and the hook-shaped The hook-shaped part or the hook-supporting part of the sputtering target is provided on the outer peripheral side surface of the sputtering target, and by making the hook-shaped part abut against the hook-supporting part, And the said sputtering target is fixed to the said backplate.

In the sputtering target material-back plate assembly of the present invention, it is preferable that the back plate has a convex portion on the plate surface, and the convex portion has the hook-shaped portion or the hook support portion. In addition to improving the bonding strength of the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength of the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target. The result is: , can maintain the bonding strength of the sputtering target during use, and maintain good thermal conductivity.

In the sputtering target material-back plate assembly of the present invention, it is preferable that the back plate has a clip on the plate surface or the plate side surface, and the clip has the hook portion or the hook support portion. In addition to improving the bonding strength of the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength of the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target. The result is: , can maintain the bonding strength of the sputtering target during use, and maintain good thermal conductivity.

In the sputtering target-back plate assembly of the present invention, it is preferable that the clip leaves a part of the side surface and enters the outer peripheral side surface, and the clip is fixed to the back plate. In addition to improving the bonding strength of the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength of the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target. The result is: , can maintain the bonding strength of the sputtering target during use, and maintain good thermal conductivity.

In the sputtering target-back plate assembly of the present invention, it is preferable that the side surface of the clip protrudes from the outer peripheral side surface, and at least the protruding portion of the clip is fixed to the back plate. Even after the clip is fixed to the outer peripheral side surface of the sputtering target, the clip can be fixed to the back plate.

In the sputtering target material-back plate assembly of the present invention, it is preferable that the back plate has a concave portion on the surface of the plate, the back plate has a clip in the concave portion, and the clip has the hook-shaped portion or the hook support portion, At least a part of the sputtering target and at least a part of the clip are fitted into the concave part, and the clip is fixed to the concave part of the back plate. The position of the clip can be adjusted relative to the board surface of the backboard, and the clip can be fixed to the backboard.

In the sputtering target material-backing plate assembly of the present invention, it is preferable that the backing plate has a concave portion on the surface of the plate, the backing plate has the hook-shaped portion or the hook supporting portion on the inner peripheral side of the concave portion, and the A part of the sputtering target is embedded in the above-mentioned concave portion. In addition to improving the bonding strength of the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength of the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target. The result is: , can maintain the bonding strength of the sputtering target during use, and maintain good thermal conductivity.

In the sputtering target-back plate assembly of the present invention, it is preferable that the hook portion has a first concavo-convex portion, and the hook support portion has a second concavo-convex portion corresponding to the first concavo-convex portion. In addition to improving the bonding strength of the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength of the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target. The result is: , can maintain the bonding strength of the sputtering target during use, and maintain good thermal conductivity.

In the sputtering target material-back plate assembly of the present invention, it is preferable that the hook-shaped portion has a hook shape such that the front end of the hook in the direction from the back plate to the sputtering surface becomes a maximum hook position, and the hook supports The portion has a hook hole corresponding to the above hook shape. In addition to improving the bonding strength of the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength of the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target. The result is: , can maintain the bonding strength of the sputtering target during use, and maintain good thermal conductivity.

In the sputtering target-backplate assembly of the present invention, it is preferable to have an intermediate layer of 2.5 mm or less at the interface between the sputtering target and the backplate, and the intermediate layer includes Ni, Cr, Al, Cu A sheet, powder, or a combination of the sheet and the powder of at least any metal or an alloy containing at least any one of Ni, Cr, Al, and Cu. By providing the intermediate layer, the bonding strength between the back surface of the sputtering target and the plate surface of the back plate or the bottom surface of the concave portion can be improved, the adhesion can be improved, and the heat conduction can be kept good. In addition, since the intermediate layer is covered with the back plate and the sputtering target, it is possible to prevent the material of the intermediate layer from volatilizing into impurities and adhering to the substrate. .

In the sputtering target-backplate assembly of the present invention, it is preferable to have an intermediate layer of 10 μm or less at the interface between the sputtering target and the backplate, and the intermediate layer contains Ni, Cr, Al, Cu A thin film of at least any metal or an alloy containing at least any one of Ni, Cr, Al, and Cu. By providing the intermediate layer, the bonding strength between the back surface of the sputtering target and the plate surface of the back plate or the bottom surface of the concave portion can be improved, the adhesion can be improved, and the heat conduction can be kept good. In addition, since the intermediate layer is covered with the back plate and the sputtering target, it is possible to prevent the material of the intermediate layer from volatilizing into impurities and adhering to the substrate. .

In the sputtering target-backplate assembly of the present invention, it is preferable to have an intermediate layer of 1.0 mm or less at the interface between the sputtering target and the backplate, and the intermediate layer includes at least any one of In and Zn. A sheet, powder, or a combination of the sheet and the powder of a metal or an alloy containing at least one of In, Zn. By providing the intermediate layer, the bonding strength between the back surface of the sputtering target and the plate surface of the back plate or the bottom surface of the concave portion can be improved, the adhesion can be improved, and the heat conduction can be kept good. In addition, since the intermediate layer is covered with the back plate and the sputtering target, it is possible to prevent the material of the intermediate layer from volatilizing into impurities and adhering to the substrate. .

In the sputtering target material-back plate assembly of the present invention, it is preferable to have at least two intermediate layers at the interface between the sputtering target material and the back plate, and the intermediate layers include: a plate with a thickness of 2.5 mm or less, powder , or the combination of the plate and the powder, which contains at least any metal of Ni, Cr, Al, and Cu or an alloy containing at least any of Ni, Cr, Al, and Cu; the thin film below 10 μm, which contains Ni, Cr, Al, and Cu. At least any one of Cr, Al, Cu or an alloy containing at least any one of Ni, Cr, Al, Cu; or a sheet, powder, or a combination of the sheet and the powder below 1.0 mm, which contains In, Zn At least any metal or an alloy containing at least any one of In and Zn. By providing two intermediate layers, the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate or the bottom surface of the recess can be improved, and the adhesion can be improved to maintain good thermal conductivity. In addition, since the intermediate layer is covered with the back plate and the sputtering target, it is possible to prevent the material of the intermediate layer from volatilizing into impurities and adhering to the substrate. .

In the sputtering target-back plate assembly of the present invention, preferably, the material of the sputtering target is Al-Sc alloy, Ru, Ru alloy, Ir or Ir alloy. Even with a high melting point material of 1000°C or higher, warpage or cracking of the sputtering target can be suppressed, and the bonding strength between the sputtering target and the backing plate can be improved.

In the sputtering target-back plate assembly of the present invention, it is preferable that the material of the sputtering target is Li-based oxide, Co-based oxide, Ti-based oxide or Mg-based oxide. Even with a high melting point material of 1000°C or higher, warpage or cracking of the sputtering target can be suppressed, and the bonding strength between the sputtering target and the backing plate can be improved.

In the sputtering target material-back plate assembly of the present invention, preferably, the material of the back plate is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the linear expansion coefficient of the back plate is 30.0×10 ^-6 /℃ or less. By using a backing plate with good thermal conductivity, the backing plate expands when heated, and the sputtering target can be inserted into the inner peripheral side of the convex or concave portion of the backing plate, and the backing plate shrinks when cooling, so that the The inner peripheral side surface of the convex portion or the concave portion is in contact with the outer peripheral side surface of the sputtering target to form a joined body.

The manufacturing method of the sputtering target material-back plate joint body of the present invention is characterized by comprising: step 1, which is to prepare a back surface having a plate surface, a plate back surface, a plate side surface, and any one of the hook-shaped part or the hook support part A plate, and a sputtering target having a target surface, a target back, an outer peripheral side, and the other of the hook-shaped portion or the hook support portion disposed on the outer peripheral side; step 2, which is to heat the back plate thermally expanding it; step 3, disposing the sputtering target and the backing plate in such a way that the surface of the plate and the back surface of the target are opposite, and the hook support part and the hook-shaped part are opposite to each other; and step 4 , which fixes the sputtering target to the backing plate by cooling the sputtering target and the backing plate so that the hook-shaped portion abuts on the hook support portion. By making the hook-shaped portion abut against the hook support portion by thermal expansion and thermal contraction, the sputtering target-back plate assembly can be easily produced.

In the manufacturing method of the sputtering target material-backing plate joint body of this invention, it is preferable to cool the said sputtering target material and the said backing plate so that the said hook-shaped part abuts on the said hook support part, and is After the step 4 of fixing the above-mentioned sputtering target on the above-mentioned backing plate, pressing the surface of the above-mentioned target material of the above-mentioned sputtering target material to the above-mentioned backing plate or heating the above-mentioned sputtering target material and the above-mentioned backing plate is combined with the above-mentioned sputtering. The step of pressing the target surface of the target to the backing plate, and the cooling step of the sputtering target and the backing plate are performed once or repeated two or more times as one set. The warpage of the sputtering target can be suppressed, and the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate or the bottom surface of the recess can be improved, the adhesion can be improved, and heat conduction can be performed efficiently.

The sputtering target material-backing plate joint body of the present invention is characterized by comprising: step 1, which is to prepare a backing plate having a plate surface, a plate back surface, and a plate side surface, and either a hook-shaped portion or a hook support portion. A clip, and a sputtering target having a target surface, a target back, an outer peripheral side, and the other of the hook-shaped portion or the hook support portion on the outer peripheral side; step 2, which is based on the plate surface and the The sputtering target and the back plate are arranged in such a way that the back of the target is opposite to each other; in step 3, the clip is arranged on the surface of the plate or the side of the plate, and the hook support part is opposite to the hook-shaped part. disposing the sputtering target and the clip; and step 4, which is to fix the clip on the back plate in the disposition state of the step 3. By providing the hook-shaped part or the hook support part in the clip, the hook-shaped part and the hook support part can be easily abutted, and the sputtering target-back plate joint body can be easily produced.

In the manufacturing method of the sputtering target material-back plate assembly of the present invention, preferably after the step 4 of fixing the above-mentioned clip on the above-mentioned back plate in the configuration state of the above-mentioned step 3, the sputtering target material is separated from the sputtering target material. The steps of pressing the surface of the target material to the back plate or heating the sputtering target material and the back plate and pressing the back plate from the target material surface of the sputtering target material, and the sputtering target material The cooling step with the above-mentioned backing plate is performed once or repeated twice or more as one set. The warpage of the sputtering target can be suppressed, and the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate or the bottom surface of the recess can be improved, the adhesion can be improved, and heat conduction can be performed efficiently.

The sputtering target recovery method of the present invention is characterized by comprising: step A, which is to heat the sputtering target-back plate assembly of the present invention to thermally expand it until the hook-shaped portion leaves the hook support portion; and step A B, it removes the said sputtering target material from the said backplate, and collects the said sputtering target material from the said sputtering target material-backplate assembly.

The sputtering target recovery method of the present invention is characterized in that it is a method for recovering the above-mentioned sputtering target material from a sputtering target material-backplane assembly in which the sputtering target material is fixed to the backing plate by means of a clip, and the recovery The method includes the step C of removing the clip from the backplane, and recovering the sputtering target from the sputtering target-backplane assembly. [Effect of invention]

The present invention can provide a sputtering target material-back plate assembly, a method for manufacturing the same, and a method for recovering a sputtering target material. The sputtering target material-back plate assembly can be used even when a sputtering target with low flexural strength is used. In such cases or when the difference in the coefficient of linear expansion between the sputtering target and the backing plate is greatly different, the damage and peeling of the sputtering target can be suppressed, and the contamination caused by the volatilization of impurities can be suppressed. The loss of the expensive material used as the target can be suppressed, and the target can be easily peeled and recovered.

Hereinafter, the present invention will be described in detail with reference to the embodiments, but the present invention should not be construed as being limited to these descriptions. As long as the effects of the present invention are exhibited, the embodiment may be changed in various ways. In the figure, in each joint body, the parts with the same names are denoted by the same symbols regardless of their shapes.

<Sputtering target-back plate assembly> (Form 1-1: Form in which the back plate has a hook-shaped portion, and the sputtering target has a hook support portion) Referring to FIGS. 1 and 2 , the sputtering target-back plate assembly of the present embodiment will be described. The sputtering target material-backing plate assembly 100 of the present embodiment is formed by joining the sputtering target material 2 to the backing plate 1, and the backing plate 1 has a plate surface 3, a plate back surface 4, and a plate side surface 5, and the sputtering target The material 2 has a target surface 7, a target back surface 8 opposite to the plate surface 3, and an outer peripheral side surface 9. Among the backing plate 1 and the sputtering target 2, the backing plate 1 further has a hook-shaped portion 6, and the sputtering target 2 Furthermore, the hook support portion 10 is provided. The hook portion 6 and the hook support portion 10 are in contact with each other. The hook support portion 10 of the sputtering target 2 is provided on the outer peripheral side surface 9 of the sputtering target 2. The sputtering target 2 is fixed to the backing plate 1 by contacting the hook support portion 10 . By making the hook portion 6 abut against the hook support portion 10 , the sputtering target 2 can be fixed in the lateral direction of the plate surface 3 of the back plate 1 , and the sputtering target 2 can be fixed in the thickness direction of the plate surface 3 of the back plate 1 . Plated target 2.

In the form shown in FIG. 1 and FIG. 2, the back board 1 has the convex part 13 on the board surface 3, and the convex part 13 has the form of the hook-shaped part 6. FIG. The back plate 1 is cut to form the convex portion 13 , and the hook portion 6 is formed on the inner side of the convex portion 13 . The hook-shaped portion 6 is integrated with the backing plate 1, so that the sputtering target 2 can be fixed.

As for the hook-shaped part 6 and the hook support part 10 in FIG. 2 , it is preferable that the hook-shaped part 6 and the hook support part 10 are brought into contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2 . In FIG. 1 , the annular hatched position indicates the top surface of the convex portion 13 provided on the plate surface 3 of the back plate 1 , and indicates that the convex portion 13 is located on the entire circumference of the outer peripheral shape of the sputtering target 2 . However, as long as damage and peeling of the sputtering target 2 can be suppressed and contamination due to volatilization of impurities can be suppressed, two or more hook-shaped portions 6 and hook support portions 10 may be locally formed and brought into contact with each other. .

About the hook-shaped part 6 and the hook support part 10 in FIG. 2, the form of the hook-shaped part and the hook support part shown in FIGS.

Moreover, if the hook-shaped portion 6 is in contact with the hook support portion 10, the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured, but in addition to the bonding strength, the bonding strength between the backing plate 1 and the sputtering target 2 is also In the case of adhesiveness, when the hook-shaped part 6 and the hook support part 10 are brought into contact with each other, it is preferable to press the hook-shaped part 6 toward the hook support part 10 .

In FIGS. 1 and 2 , the disc-shaped sputtering target 2 is shown joined to the disc-shaped backing plate 1 , but as shown in FIG. 3 , the rectangular sputtering target 2 may be joined. In the shape of the rectangular back panel 1. The B-B section has the same shape as the A-A section shown in FIG. 2 . In addition, the shape of a rectangle includes the shape of a square. In FIG. 3 , the annular hatched position also represents the top surface of the convex portion 13 disposed on the plate surface 3 of the back plate 1 .

(Form 1-2: Form in which the back plate has a hook support portion, and the sputtering target has a hook portion) 4 and 5, another form of the sputtering target-back plate assembly of the present embodiment will be described. The sputtering target material-backing plate joint 101 of the present embodiment is formed by joining the sputtering target material 2 to the backing plate 1, and the backing plate 1 has a plate surface 3, a plate back surface 4, and a plate side surface 5, and sputtering The target material 2 has a target material surface 7, a target material back surface 8 opposite to the plate surface 3, and an outer peripheral side surface 9. Among the backing plate 1 and the sputtering target material 2, the backing plate 1 further has a hook support portion 10, and the sputtering target material 2 further has a hook-shaped part 6, the hook-shaped part 6 and the hook support part 10 are in contact with each other, the hook-shaped part 6 of the sputtering target 2 is provided on the outer peripheral side surface 9 of the sputtering target 2, and by making the hook-shaped part 6 is in contact with the hook support portion 10 to fix the sputtering target 2 to the backing plate 1 . By making the hook portion 6 abut against the hook support portion 10 , the sputtering target 2 can be fixed in the lateral direction of the plate surface 3 of the back plate 1 , and the sputtering target 2 can be fixed in the thickness direction of the plate surface 3 of the back plate 1 . Plated target 2.

In the form shown in FIGS. 4 and 5 , the back plate 1 has a convex portion 13 on the plate surface 3, and the convex portion 13 has a form in which the hook support portion 10 is provided. The back plate 1 is cut to form the convex portion 13 , and the hook support portion 10 is formed on the inner side of the convex portion 13 . Since the hook support part 10 is integrated with the backing plate 1, the sputtering target 2 can be fixed.

Regarding the hook-shaped portion 6 and the hook support portion 10 in FIG. 5 , it is preferable that the hook-shaped portion 6 and the hook support portion 10 are in contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2. However, if sputtering can be suppressed When the target material 2 is broken and peeled off, and contamination due to volatilization of impurities can be suppressed, two or more hook-shaped portions 6 and hook support portions 10 may be locally formed and brought into contact with each other.

About the hook-shaped part 6 and the hook support part 10 in FIG. 5, the form of the hook-shaped part and the hook support part shown in FIGS.

Moreover, if the hook-shaped portion 6 is in contact with the hook support portion 10, the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured, but in addition to the bonding strength, the bonding strength between the backing plate 1 and the sputtering target 2 is also In the case of adhesiveness, when the hook-shaped part 6 and the hook-shaped part 10 are brought into contact with each other, it is preferable that the hook-shaped part 6 is pressed toward the hook-shaped part 6 from the hook-shaped part 10 .

In FIGS. 4 and 5 , the disc-shaped sputtering target 2 is shown joined to the disc-shaped back plate 1 , but as shown in FIG. 6 , the rectangular sputtering target 2 may be joined. In the shape of the rectangular back panel 1. The B-B section has the same shape as the A-A section shown in FIG. 5 . In addition, the shape of a rectangle includes the shape of a square. In FIG. 6 , the annular hatched position also represents the top surface of the convex portion 13 provided on the plate surface 3 of the back plate 1 .

Hereinafter, the present embodiment will be further described by showing schematic cross-sectional views of various sputtering target-backplate assemblies. The sputtering target-back plate joint body may be any of a circular plate shape, a rectangular plate shape, or a square plate shape.

(Form 2-1: The back plate has a clip, and the clip has a hook-shaped part) As shown in FIG. 7 , in the sputtering target-backplate assembly 200 of the present embodiment, it is preferable that the backplate 1 has a clip 14 , and the clip 14 has a hook portion 6 . The sputtering target 2 has a hook support portion 10 , and the hook-shaped portion 6 is in contact with the hook support portion 10 . In the form 1-1, the tie back plate 1 has the convex part 13 on the plate surface 3, and the convex part 13 has the hook-shaped part 6. On the other hand, in the form 2-1, there is a clip 14 instead of the convex part 13. . Since the back plate 1 has the clip 14 , the clip 14 has the same function as the convex portion 13 . Because the back plate 1 has the clips 14 , it is convenient to process and assemble the joint body. As shown in FIG. 7 , in the sputtering target-backplate assembly 200 of the present embodiment, preferably the side surface of the clip 14 protrudes from the outer peripheral side surface 9 , and at least the protruding part of the clip 14 is fixed to the back plate 1 . The difference from the form shown in FIG. 2 is that a clip is prepared separately from the backing plate 1 and the sputtering target 2 , a hook-shaped portion 6 is formed on the side of the clip which is in contact with the sputtering target 2 , and the sputtering target is 2. A hook support portion 10 is formed on the outer peripheral side surface 9. After the hook portion 6 of the clip 14 is brought into contact with the hook support portion 10 of the sputtering target 2, the clip at the position not covered by the sputtering target 2 faces the back. By fixing the plate 1 , the sputtering target 2 can be fixed to the back plate 1 . As for fixing, for example, it is fixed by screwing at the screwing position 11 . By making such a structure, the outer side of the hook-shaped portion 6 of the back plate 1 is positioned more outward than the outer peripheral side surface 9 of the sputtering target 2, and when the hook-shaped portion 6 abuts on the hook support portion 10, the sputtering target is formed. 2 is fixed in the lateral direction of the plate surface 3 of the back plate 1 , and can also fix the sputtering target 2 in the thickness direction of the plate surface 3 of the back plate 1 . The clip 14 can also be fixed by a joining method such as diffusion bonding and welding in addition to being fixed to the back plate 1 by screwing. In FIG. 7 , at the screwing position 11, the clip 14 is fixed to the board surface 3 of the backboard 1 by screwing, but it can also be fixed not only to the board surface 3, but also to the backboard 1. side or back.

In the form shown in FIG. 7, the hook-shaped part 6 and the hook support part 10 can be made to contact similarly to the form shown in FIG. (1) It is preferable that the hook-shaped portion 6 and the hook support portion 10 are in contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2 , but two or more hook-shaped portions 6 and the hook support portion 10 may be formed locally. make it abut. (2) The hook-shaped portion 6 and the hook support portion 10 may be brought into contact with each other in the form of the hook-shaped portion and the hook support portion shown in FIGS. 7(A) to 7(N) and the like. (3) When the adhesiveness between the back plate 1 and the sputtering target 2 is also required in addition to the bonding strength, when the hook-shaped part 6 is in contact with the hook support part 10 , the hook-shaped part 6 may be directed toward the hook support part 10 Press.

(Form 2-2: The back plate has a clip, and the clip has a hook support part) Similar to the relationship between the form 1-1 and the form 1-2, that is, the disposition of the hook-shaped part and the hook support part is reversed, the disposition of the hook-shaped part 6 and the hook support part 10 in the form 2-1 can also be reversed ( not shown).

(Form 3-1: The back plate has a clip, and the clip has a hook-shaped part) As shown in FIG. 8 , in the sputtering target-backplate assembly 201 of the present embodiment, the clip 14 preferably leaves a part of the side surface and enters the outer peripheral side 9 , and the clip 14 is fixed to the backplate 1 . Since the clips 14 are included in the shape of the sputtering target 2, exposure of the corners of the clips 14 can be reduced. In addition, by making such a structure, when the hook portion 6 abuts on the hook support portion 10 , the sputtering target 2 is fixed in the side surface direction of the plate surface 3 of the back plate 1 , and can be attached to the back plate 1 . The sputtering target 2 is fixed in the thickness direction of the plate surface 3 . The clip 14 can also be fixed by a joining method such as diffusion bonding and welding in addition to being fixed to the back plate 1 by screwing. In FIG. 8 , at the screwing position 11, the clip 14 is fixed to the board surface 3 of the backboard 1 by screwing, but it can also be fixed not only to the board surface 3, but also to the backboard 1. side or back.

In the form shown in FIG. 8, the hook-shaped part 6 and the hook support part 10 can be made to contact similarly to the form shown in FIG. (1) It is preferable that the hook-shaped portion 6 and the hook support portion 10 are in contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2 , but two or more hook-shaped portions 6 and the hook support portion 10 may be formed locally. make it abut. (2) About the hook-shaped part 6 and the hook support part 10, the form of the hook-shaped part and the hook support part shown in FIG. (3) When the adhesiveness between the back plate 1 and the sputtering target 2 is also required in addition to the bonding strength, when the hook-shaped part 6 is in contact with the hook support part 10 , the hook-shaped part 6 may be directed toward the hook support part 10 Press.

(Form 3-2: The back plate has a clip, and the clip has a hook support part) Similar to the relationship between the form 1-1 and the form 1-2, that is, the disposition of the hook-shaped part and the hook support part is reversed, the disposition of the hook-shaped part 6 and the hook support part 10 in the form 3-1 can also be reversed ( not shown).

(Form 4-1: The back plate has a concave part, and the concave part has a hook-shaped part) As shown in FIG. 9 , in the sputtering target-backing plate assembly 300 of the present embodiment, it is preferable that the backing plate 1 has a concave portion 17 on the plate surface 3 , and the backing plate 1 has a hook on the inner peripheral side surface 16 of the concave portion 17 . A part of the sputtering target 2 is inserted into the concave part 17 . In the form of FIG. 9 , the hook support portion 10 is provided on the outer peripheral side surface 9 of the sputtering target 2 , and the hook portion 6 abuts against the hook support portion 10 . The sputtering target 2 is fixed on top, and the sputtering target 2 is fixed in the thickness direction of the plate surface 3 of the back plate 1 . The difference from the form shown in FIG. 2 is that the bottom of the sputtering target 2 is embedded in the concave portion 17 corresponding to the depth of the concave portion 17 of the backing plate 1 , so that it can be placed in the lateral direction of the plate surface 3 of the backing plate 1 . The sputtering target 2 is fixed on top, and the sputtering target 2 is fixed in the thickness direction of the plate surface 3 of the back plate 1 .

In the form shown in FIG. 9, the hook-shaped part 6 and the hook support part 10 can be made to contact similarly to the form shown in FIG. (1) It is preferable that the hook-shaped portion 6 and the hook support portion 10 are in contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2 , but two or more hook-shaped portions 6 and the hook support portion 10 may be formed locally. make it abut. (2) The hook-shaped portion 6 and the hook support portion 10 may be brought into contact with each other in the form of the hook-shaped portion and the hook support portion shown in FIGS. 9(A) to 9(N) and the like. (3) When the adhesiveness between the back plate 1 and the sputtering target 2 is also required in addition to the bonding strength, when the hook-shaped part 6 is in contact with the hook support part 10 , the hook-shaped part 6 may be directed toward the hook support part 10 Press.

(Form 4-2: The back plate has a concave part, and the concave part has a hook support part) Similar to the relationship between the form 1-1 and the form 1-2, that is, the disposition of the hook-shaped part and the hook support part is reversed, the disposition of the hook-shaped part 6 and the hook support part 10 in the form 4-1 can also be reversed ( not shown).

(Form 5-1: The back plate has a concave part and the clip has a hook part) As shown in FIG. 10 , in the sputtering target-backplate assembly 400 of the present embodiment, preferably, the backplate 1 has a recess 17 on the surface 3 of the plate, the backplate 1 has a clip 14 in the recess 17 , and the clip 14 has a The hook portion 6 , at least a part of the sputtering target 2 and at least a part of the clip 14 are inserted into the recess 17 , and the clip 14 is fixed to the recess 17 of the back plate 1 . The difference from the form shown in FIG. 9 is that a clip 14 is prepared separately from the backing plate 1 and the sputtering target 2 , a hook-shaped portion 6 is formed on the side of the clip 14 that is in contact with the sputtering target 2 , and the sputtering The hook support portion 10 is formed on the outer peripheral side surface 9 of the target material 2. After the hook portion 6 of the clip 14 is brought into contact with the hook support portion 10 of the sputtering target material 2, the clip 14 and the sputtering target material 2 are embedded in the back. The concave portion 17 of the plate 1 is fixed from the clip 14 at the position not covered by the sputtering target 2 toward the backing plate 1 , whereby the sputtering target 2 can be fixed to the backing plate 1 . The sputtering target 2 can be fixed in the lateral direction of the plate surface 3 of the back plate 1 , and the sputtering target 2 can be fixed in the thickness direction of the plate surface 3 of the back plate 1 . The clip 14 can also be fixed by a joining method such as diffusion bonding and welding, in addition to being fixed to the back plate 1 by screwing.

In the form shown in FIG. 10, the hook-shaped part 6 and the hook support part 10 can be made to contact similarly to the form shown in FIG. (1) It is preferable that the hook-shaped portion 6 and the hook support portion 10 are in contact with each other over the entire circumference of the outer peripheral shape of the sputtering target 2 , but two or more hook-shaped portions 6 and the hook support portion 10 may be formed locally. make it abut. (2) About the hook-shaped part 6 and the hook support part 10, the form of the hook-shaped part and the hook support part shown in FIGS. (3) When the adhesiveness between the back plate 1 and the sputtering target 2 is also required in addition to the bonding strength, when the hook-shaped part 6 is in contact with the hook support part 10 , the hook-shaped part 6 may be directed toward the hook support part 10 Press.

(Form 5-2: The back plate has a concave part, and the clip has a hook support part) Similar to the relationship between the form 1-1 and the form 1-2, that is, the disposition of the hook-shaped part and the hook support part is reversed, the disposition of the hook-shaped part 6 and the hook support part 10 in the form 5-1 can also be reversed ( not shown).

(Variation 1 of the shapes of the hook portion and the hook support portion) In the sputtering target-back plate assembly of the present embodiment, it is preferable that the hook portion 6 has a first uneven portion, and the hook support portion 10 has a second uneven portion corresponding to the first uneven portion. In addition to improving the bonding strength of the sputtering target and the backing plate in the lateral direction of the sputtering target, the bonding strength of the sputtering target and the backing plate can also be improved in the thickness direction of the sputtering target. The result is: , can maintain the bonding strength of the sputtering target during use, and maintain good thermal conductivity. Here, the second concave-convex-shaped portion corresponding to the first concave-convex-shaped portion includes a form in which the concave-convex-shaped portions are in contact with each other without a gap, and also includes a form in which the concave-convex-shaped portions have a gap with each other but are locked without displacement. Examples of such a form are shown in, for example, Fig. 2(L), Fig. 2(M), Fig. 2(N), Fig. 5(J), Fig. 5(K), Fig. 5(L), Fig. 7( L), Figure 7 (M), Figure 7 (N), Figure 8 (L), Figure 8 (M), Figure 8 (N), Figure 9 (L), Figure 9 (M), Figure 9 (N) , Figure 10 (L), Figure 10 (M) or Figure 10 (N).

(Variation 2 of the shape of the hook portion and the hook support portion) In the sputtering target material-backing plate joint of the present embodiment, it is preferable that the hook-shaped portion 6 has a hook shape whose front end of the hook in the direction from the backing plate 1 to the sputtering surface becomes the maximum hooking position, and the hook supporting portion has a hook shape. 10 has hook holes corresponding to the hook shape. In addition to improving the bonding strength between the sputtering target 2 and the backing plate 1 in the lateral direction of the sputtering target 2 , the bonding strength between the sputtering target 2 and the backing plate 1 can also be improved in the thickness direction of the sputtering target 2 . As a result, the bonding strength at the time of use of the sputtering target can be maintained, and the heat conduction can be kept good. Here, the hook support portion has a hook hole corresponding to the hook shape, including a shape in which the hook hole is fitted into the hook shape without gap, and also includes a hook shape inserted into the hook hole with a gap, but it is locked with each other without offset. form. As examples having such a form, for example, as shown in FIG. 2(D), FIG. 2(F), FIG. 7(D), FIG. 7(F), FIG. 8(D), FIG. 8(F), FIG. D), Fig. 9(F), Fig. 10(D) or Fig. 10(F).

(Form 6-1: Form with an intermediate layer) As shown in FIG. 11 , in the sputtering target-backplate assembly 500 of the present embodiment, it is preferable that the interface between the sputtering target 2 and the backplate 1 has an intermediate layer 12 with a thickness of 2.5 mm or less. It includes a plate, powder, or a combination of the plate and the powder containing at least any one of Ni, Cr, Al, and Cu or an alloy containing at least any one of Ni, Cr, Al, and Cu. By using the intermediate layer 12 to reduce the difference between the linear expansion coefficients of the sputtering target 2 and the backing plate 1 , damage and warpage of the sputtering target 2 caused by repeated heating expansion and cooling contraction can be further suppressed. In addition, by providing the intermediate layer 12, the bonding strength between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the back plate can be improved, and the adhesion can be improved, thereby maintaining good thermal conductivity. In addition, when the hook-shaped portion 6 of the backing plate 1 is provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2, the intermediate layer 12 is provided on the plate surface 3 of the backing plate 1 and the backing plate 1. The inner side of the hook portion 6 and the position surrounded by the target back surface 8 of the sputtering target 2 . As a result, since the intermediate layer 12 is covered with the sputtering target 2, the material of the intermediate layer 12 can be prevented from volatilizing into impurities and adhering to the substrate. The reason why the elements Ni, Cr, Al, and Cu are selected for the intermediate layer 12 is that they are suitable from the viewpoints of adhesion, thermal conductivity, and coefficient of linear expansion. In the case where the middle layer 12 is a plate, if the plate is thicker than 2.5 mm, the height of the position where the hook-shaped portion 6 is arranged on the back plate 1 must be set higher. When the intermediate layer 12 is a powder layer, there is a form in a powder state, a form in which the powder is sintered, or a form in which the powder is melted by heating by heating. Furthermore, the form of the powder melted by heating is similar to the form in which the intermediate layer 12 is a plate. The intermediate layer 12 is preferably disposed between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the back plate 1 , but in addition to this, it can also be disposed on the sputtering target 2 including the hook support portion 10 . The interface between the outer peripheral side surface 9 and the inner side of the back plate 1 where the hook-shaped portion 6 is provided. About the hook-shaped part 6 and the hook support part 10, the form of the hook-shaped part and the hook support part shown to FIG. 8 (A) - FIG. 8 (N) etc. may be made to contact.

(Form 6-2: Form with an intermediate layer) In the sputtering target-backing plate assembly 500 shown in FIG. 11, the interlayer 12 is provided in the form of the hook-shaped portion 6 provided on the plate surface 3 of the backing plate 1. In the sputtering target-back plate assembly 501 shown in 12, when the concave portion 17 is formed on the plate surface 3 of the back plate 1, the intermediate layer 12 of 2.5 mm or less may be similarly provided.

(Form 7-1: Form with an intermediate layer) Similar to the form shown in FIG. 11 , the sputtering target-backplate assembly of the present embodiment preferably has an intermediate layer 12 with a thickness of 10 μm or less at the interface between the sputtering target 2 and the backing plate 1 . It is a thin film containing at least any one of Ni, Cr, Al, and Cu, or an alloy containing at least any one of Ni, Cr, Al, and Cu. By using the intermediate layer 12 to reduce the difference between the linear expansion coefficients of the sputtering target 2 and the backing plate 1 , damage and warpage of the sputtering target 2 caused by repeated heating expansion and cooling contraction can be further suppressed. Even if the film thickness of the intermediate layer 12 is thicker than 10 μm, only the time required to form the intermediate layer 12 is required, and the effect of the intermediate layer 12 does not change much compared with the effect of 10 μm or less. Moreover, by providing the intermediate layer 12, the bonding strength of the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1 can be improved, and the adhesion can be improved, and the heat conduction can be kept good. In addition, when the hook-shaped portion 6 of the backing plate 1 is provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2, the intermediate layer 12 is provided on the plate surface 3 of the backing plate 1 and the backing plate 1. The inner side of the hook portion 6 and the position surrounded by the target back surface 8 of the sputtering target 2 . As a result, since the intermediate layer 12 is covered with the sputtering target 2, the material of the intermediate layer 12 can be prevented from volatilizing into impurities and adhering to the substrate. The reason why the elements Ni, Cr, Al, and Cu are selected for the intermediate layer 12 is that they are suitable from the viewpoints of adhesion, thermal conductivity, and coefficient of linear expansion. The thin film is preferably a thin film obtained by sputtering, and is preferably formed on the surface 3 of the backplane 1 . Moreover, the foil of thickness 10 micrometers or less may be sufficient. The intermediate layer 12 is preferably disposed between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the back plate 1 , but in addition to this, it can also be disposed on the sputtering target 2 including the hook support portion 10 . The interface between the outer peripheral side surface 9 and the inner side of the back plate 1 where the hook-shaped portion 6 is provided. About the hook-shaped part 6 and the hook support part 10, the form of the hook-shaped part and the hook support part shown to FIG. 8 (A) - FIG. 8 (N) etc. may be made to contact.

(Form 7-2: Form with an intermediate layer) In the sputtering target-backing plate assembly 500 shown in FIG. 11, the interlayer 12 is provided in the form of the hook-shaped portion 6 provided on the plate surface 3 of the backing plate 1. In the sputtering target-back plate assembly 501 shown in 12, when the concave portion 17 is formed on the plate surface 3 of the back plate 1, the intermediate layer 12 having a thickness of 10 μm or less may be similarly provided.

(Form 8-1: Form with an intermediate layer) Similar to the form shown in FIG. 11 , the sputtering target material-backing plate assembly of the present embodiment preferably has an intermediate layer 12 of 1.0 mm or less at the interface between the sputtering target material 2 and the backing plate 1 , and the intermediate layer 12 It includes a plate, powder, or a combination of the plate and the powder containing at least any one of In, Zn or an alloy containing at least any of In, Zn. By using the intermediate layer 12 to reduce the difference between the linear expansion coefficients of the sputtering target 2 and the backing plate 1 , damage and warpage of the sputtering target 2 caused by repeated heating expansion and cooling contraction can be further suppressed. The reason why the elements In and Zn are selected for the intermediate layer 12 is that they are suitable from the viewpoints of adhesion, thermal conductivity, and coefficient of linear expansion. In the case where the intermediate layer 12 is a plate, if the plate is thicker than 1.0 mm, since In or Zn is a material that is easily oxidized, the hardness may increase and cracks may occur. Moreover, by providing the intermediate layer 12, the bonding strength of the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1 can be improved, and the adhesion can be improved, and the heat conduction can be kept good. In addition, when the hook-shaped portion 6 of the backing plate 1 is provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2, the intermediate layer 12 is provided on the plate surface 3 of the backing plate 1 and the backing plate 1. The inner side of the hook portion 6 and the position surrounded by the target back surface 8 of the sputtering target 2 . As a result, since the intermediate layer 12 is covered with the sputtering target 2, the material of the intermediate layer 12 can be prevented from volatilizing into impurities and adhering to the substrate. When the intermediate layer 12 is a powder layer, there is a form in a powder state, a form in which the powder is sintered, or a form in which the powder is melted by heating by heating. Furthermore, the form of the powder melted by heating is similar to the form in which the intermediate layer 12 is a plate. The intermediate layer 12 is preferably disposed between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the back plate 1 , but in addition to this, it can also be disposed on the sputtering target 2 including the hook support portion 10 . The interface between the outer peripheral side surface 9 and the inner side of the back plate 1 where the hook-shaped portion 6 is provided. About the hook-shaped part 6 and the hook support part 10, the form of the hook-shaped part and the hook support part shown to FIG. 8 (A) - FIG. 8 (N) etc. may be made to contact.

(Form 8-2: Form with an intermediate layer) In the sputtering target-backing plate assembly 500 shown in FIG. 11, the interlayer 12 is provided in the form of the hook-shaped portion 6 provided on the plate surface 3 of the backing plate 1. In the sputtering target-backing plate assembly 501 shown in 12, when the concave portion 17 is formed on the plate surface 3 of the backing plate 1, the intermediate layer 12 of 1.0 mm or less may be similarly provided.

(Form 9-1: Form with an intermediate layer) As shown in FIG. 13 , the sputtering target-backplate assembly 600 of this embodiment preferably has two intermediate layers 12 at the interface between the sputtering target 2 and the backing plate 1 , and the intermediate layer 12 a includes the following structures Any one: a sheet, powder, or a combination of the sheet and the powder with a thickness of 2.5 mm or less, which contains at least any one of Ni, Cr, Al, and Cu, or an alloy containing at least any one of Ni, Cr, Al, and Cu; A thin film of 10 μm or less, which contains at least any metal of Ni, Cr, Al, and Cu or an alloy containing at least any of Ni, Cr, Al, and Cu; or a sheet, powder, or the sheet and the A combination of powders, which includes at least one metal in In, Zn or an alloy containing at least any one in In, Zn; and the intermediate layer 12b includes any one of the following structures: a sheet with a thickness of 2.5 mm or less, a powder, or the sheet and the The combination of the powder, which contains at least any metal of Ni, Cr, Al, and Cu, or an alloy containing at least any one of Ni, Cr, Al, and Cu; the thin film with a thickness of 10 μm or less, which contains Ni, Cr, Al, Cu At least any one of the metals or alloys containing at least any one of Ni, Cr, Al, and Cu; or a sheet, powder, or a combination of the sheet and the powder below 1.0 mm, which contains at least any one of In, Zn. Metal or An alloy containing at least one of In and Zn. By using the intermediate layer 12 to reduce the difference between the linear expansion coefficients of the sputtering target 2 and the backing plate 1 , damage and warpage of the sputtering target 2 caused by repeated heating expansion and cooling contraction can be further suppressed. It is composed of at least one metal containing at least one of Ni, Cr, Al, and Cu, or an alloy containing at least any one of Ni, Cr, Al, and Cu, or an alloy containing at least any one of In, Zn, or an alloy containing at least any one of In and Zn. The reason for forming the intermediate layer 12a provided at the interface with the back sheet 1 is that it is suitable from the viewpoints of adhesion, thermal conductivity and linear expansion coefficient. In addition, it is made from an alloy containing at least any one of Ni, Cr, Al, and Cu, or an alloy containing at least one of Ni, Cr, Al, and Cu, or an alloy containing at least one of In and Zn, or containing at least any one of In and Zn. The reason for forming the intermediate layer 12b provided at the interface with the sputtering target 2 is that it is suitable from the viewpoints of adhesion, thermal conductivity, and coefficient of linear expansion. In addition, although the form in which the intermediate layer is 2 layers is shown in FIG. 13, the form in which the intermediate layer is 3 or more layers may be sufficient as long as the effect of the intermediate layer described above can be obtained. The intermediate layer 12 is preferably disposed between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the back plate 1 , but in addition to this, it can also be disposed on the sputtering target 2 including the hook support portion 10 . The interface between the outer peripheral side surface 9 and the inner side of the back plate 1 where the hook-shaped portion 6 is provided. About the hook-shaped part 6 and the hook support part 10, the form of the hook-shaped part and the hook support part shown to FIG. 8 (A) - FIG. 8 (N) etc. may be made to contact.

(Form 9-2: Form with an intermediate layer) In the sputtering target-backing plate assembly 600 shown in FIG. 13 , the interlayer 12 is provided in the form of the hook-shaped portion 6 provided on the plate surface 3 of the backing plate 1, but the interlayer 12 is shown in FIG. 13 . In the sputtering target-back plate assembly 601 shown in 14, in the case where the concave portion 17 is formed on the plate surface 3 of the back plate 1, the intermediate layer 12 may be provided in the same manner.

(Material of sputtering target) In the sputtering target-back plate assembly of the present embodiment, the material of the sputtering target 2 can be Al-Sc alloy, Ru, Ru alloy, Ir or Ir alloy. In addition, Li-based oxides, Co-based oxides, Ti-based oxides, Mg-based oxides, or the like can also be used. Even with a high melting point material of 1000°C or higher, warpage or cracking of the sputtering target can be suppressed, and the bonding strength between the sputtering target and the backing plate can be improved. .

Preferably, in the sputtering target material-back plate assembly of the present embodiment, the material of the back plate 1 is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the coefficient of linear expansion is 30.0×10 ^-6 /°C or less . The linear expansion coefficient is preferably 28.5×10 ^-6 /°C or less, more preferably 27.3×10 ^-6 /°C or less. If the coefficient of linear expansion is greater than 30.0×10 ^-6 /°C, cracking or warping of the sputtering target will occur due to repeated heating expansion or cooling contraction of the backing plate 1 , so the linear expansion coefficient is preferably 30.0×10 ^-6 /°C or less. In addition, by using a backing plate with good thermal conductivity, the backing plate expands during heating, and the sputtering target can be inserted into a portion of the backing plate 1 from the plate surface 3 of the backing plate 1 and the inner side of the backing plate 1 where the hook-shaped portion 6 is provided. and the position surrounded by the target back surface 8 of the sputtering target 2 or the concave portion of the back plate, and the back plate shrinks during cooling, and the hook portion 6 of the back plate abuts or abuts and presses the sputtering target. The hook support part 10 can form a joint body. The lower limit of the linear expansion coefficient is preferably 6.0×10 ^-6 /°C or more.

[Relational Expression Including Linear Expansion Coefficient] (Common to ΔT) When the hook-shaped portion 6 is in contact with the hook support portion 10 , the sputtering target can be pressed by the abutting surface from the back plate, so that the above-mentioned sputtering can be The plating target is more firmly fixed to the above-mentioned backing plate. When the hook-shaped portion 6 is brought into contact with the hook support portion 10 , the surface of the backing plate that presses the sputtering target from the backing plate is called a pressing surface. In addition, the surface of the sputtering target pressed from the back plate is called a contact surface. When the contact surface of the sputtering target 2 is pressed by the pressing surface of the backing plate 1, it is preferable that the pressing surface has at least a pair of surfaces arranged opposite to each other across the contact surface, and the paired pressing surfaces are mutually The relationship between the distance and the distance between the contact surfaces in contact with the paired pressing surfaces satisfies (Numerical 1) to (Numerical 5). (Number 1) D _TG > D _BP (Number 2) D _BP =D _TG −ΔD×C (Number 3) ΔD=D _BP ×ΔT×CTE _BP −D _TG ×ΔT×CTE _TG (Number 4) D _TG − ΔD×4.0≦D _BP ≦D _TG −ΔD×0.5 (Number 5) CTE _BP > CTE _TG Among them, the meanings of DB _BP , D _TG , ΔD, C, T, ΔT, CTE _BP and CTE _TG are as follows. D _BP : The distance between the pressing surfaces of the pair at room temperature (mm) D _TG : The distance between the contact surfaces in contact with the pressing surfaces of the pair at room temperature (mm) T : Thermal expansion of the back plate Temperature (°C) at which the sputtering target is fitted (wherein, T>room temperature) ΔT: T-room temperature (°C) CTE _BP : Linear expansion coefficient of the back plate at temperature T (1/°C) CTE _TG : Linear expansion coefficient of sputtering target at temperature T (1/°C) C: Coefficient (where C=0.5～4.0) ΔD: The difference between the thermal expansion of the backing plate and the sputtering target when the temperature is raised from room temperature to T Difference (mm) Here, when the plane shape of the backing plate 1 is a rectangle, the long side of the sputtering target 2 and the long side of the backing plate 1 are made to correspond, and the short side of the sputtering target 2 is made to correspond to the backing plate 1. corresponding to the short side. As shown in (Numerical 1), at room temperature, the distance between the contact surfaces of the sputtering targets 2 is greater than the distance between the pressing surfaces of the backing plate 1, and the sputtering target 2 cannot be placed between the pressing surfaces of the backing plate 1. inside. Here, room temperature was set to 25 degreeC. Here, as the form (1), a form in which the temperature of both the back plate 1 and the sputtering target 2 is raised to the temperature T is conceivable. When the back sheet 1 is heated from room temperature to a temperature T at which the back sheet thermally expands, the distance between the pressing surfaces of the back sheet 1 thermally expands along the length obtained by ( _{DBP×ΔT×CTE BP )} . Moreover, when the sputtering target 2 is heated from room temperature to the temperature T, the distance between the contact surfaces of the sputtering target 2 thermally expands by the length obtained by ( _DTG ×ΔT× _CTETG ). Therefore, with regard to the coefficient of linear expansion, when the relationship of (Equation 5) is established, if both the backing plate 1 and the sputtering target 2 are heated to a temperature T, the thermal expansion of the pressing surface of the backing plate 1 will be higher than that of the sputtering target 2 The thermal expansion of the contact surface is more than the length of ΔD. If the distance between the pressing surfaces of the backing plate 1 and the contacting surfaces of the sputtering target 2 are the same or larger due to the thermal expansion, the sputtering target 2 can be embedded between the pressing surfaces of the backing plate 1 . inside. Then, when the temperature is lowered to room temperature, the contact surface of the sputtering target 2 is pressed by the pressing surface of the back plate 1 according to the relationship shown in (Numerical 1). In the above-mentioned form (1), in order to be able to press the contact surface of the sputtering target 2 by the pressing surface of the backing plate 1, it is necessary to adjust the distance between the pressing surfaces of the backing plate 1 and the sputtering target by the thermal expansion of the backing plate 1. The distances between the contact surfaces of the materials 2 are reversed. Therefore, the relationship between the distance between the pressing surfaces of the back plate 1 at room temperature can be set to be smaller than the distance between the contact surfaces of the sputtering targets 2 at room temperature. 4). In (Numerical 2) and (Numerical 4), C is a coefficient, and when C is in the range of 0.5 to 4.0, the contact surface of the sputtering target 2 is pressed by the pressing surface of the back plate 1 to connect the sputtering target to the sputtering target. The back plate is joined, and cracking and warpage of the sputtering target can be suppressed at this time.

In this embodiment, not only the mode (1) of raising the temperature of both the backing plate 1 and the sputtering target 2 to the temperature T described above is included, but also including raising the temperature of the backing plate 1 to the temperature T to heat the sputtering target 2 The form (2) of heating up only to the temperature T1 lower than the temperature T; and the form (3) of heating the back plate ₁ to the temperature T without raising the temperature of the sputtering target 2 .

[Relational Expression Including Linear Expansion Coefficient] (Different in ΔT(BP) and ΔT1(TG)) When pressing the contact surface of the sputtering target 2 by the pressing surface of the backing plate 1, it is preferable that the pressing surface has at least an arrangement On the paired surfaces facing each other across the above-mentioned contact surfaces, and the relationship between the distance between the pair of pressing surfaces and the distance between the contact surfaces in contact with the above-mentioned paired pressing surfaces satisfies (Numerical 6) to (Numerical 10). (Numerical 6) D _TG > D _BP (Numerical 7) D _BP =D _TG −ΔD×C (Numerical 8) ΔD=D _BP ×ΔT×CTE _BP −D _TG ×ΔT ₁ ×CT ₁ E _TG (Numerical 9) D _TG −ΔD×4.0≦D _BP ≦D _TG −ΔD×0.5 (number of 10) CTE _BP >CT ₁ E _TG Among them, D _BP , D _TG , ΔD, C, T, ΔT, T ₁ , ΔT ₁ , CTE The meanings of _BP and CT ₁ E _TG are as follows, respectively. D _BP : The distance between the pressing surfaces of the pair at room temperature (mm) D _TG : The distance between the contact surfaces in contact with the pressing surfaces of the pair at room temperature (mm) T : Thermal expansion of the back plate Temperature (°C) of the backing plate when the sputtering target is fitted (wherein, T>room temperature, T>T1) ΔT: T _- room temperature (°C) T1 _: The backing plate is thermally expanded to make the sputtering target The temperature of the sputtering target during material fitting (°C) (wherein, T ₁ ≧ room temperature, T > T ₁ ) ΔT ₁ : T ₁ - room temperature (° C) CTE _BP : the line of the backing plate at the temperature T Expansion coefficient (1/°C) CT ₁ E _TG : Linear expansion coefficient of the sputtering target at temperature T ₁ (1/° C.) C: Coefficient (wherein, C=0.5～4.0) ΔD: Temperature rise from room temperature to temperature T The difference (mm) between the thermal expansion of the backing plate at the time of heating from room temperature to the temperature T1 _of the sputtering target (mm) At the temperature T at which the back plate is thermally expanded, the distance between the pressing surfaces of the back plate 1 is thermally expanded by the length obtained by (DBP×ΔT× _{CTEBP )} . In addition, since the sputtering target 2 is kept at room temperature, the distance between the contact surfaces of the sputtering target 2 does not thermally expand. In this way, if the backing plate 1 is thermally expanded by heating it up to the temperature T, the distance between the pressing surfaces of the backing plate 1 will thermally expand by the length obtained by (D _BP ×ΔT ×CTE _BP ), and the back plate The distance between the pressing surfaces of 1 thermally expands compared with the distance between the contact surfaces of the sputtering target 2 , so that the sputtering target 2 can be embedded into the inner side of the pressing surface of the back plate 1 . Then, when the temperature is lowered to room temperature, the contact surface of the sputtering target 2 is pressed by the pressing surface of the back plate 1 according to the relationship shown in (Numerical 6). In the above-mentioned form (3), in order to be able to press the contact surface of the sputtering target 2 by the pressing surface of the backing plate 1, the distance between the pressing surfaces of the backing plate 1 and the sputtering target must be adjusted by the thermal expansion of the backing plate 1. The distances between the contact surfaces of the materials 2 are reversed. Therefore, the relationship between the distance between the pressing surfaces of the back plate 1 at room temperature can be set to be smaller than the distance between the contact surfaces of the sputtering targets 2 at room temperature. 9). In (Numerical 7) and (Numerical 9), C is a coefficient, and when C is in the range of 0.5 to 4.0, the contact surface of the sputtering target 2 is pressed by the pressing surface of the backing plate 1 to connect the sputtering target to the sputtering target. Back plate bonding can suppress cracking and warpage of the sputtering target at this time.

Since the form (2) is an intermediate form between the form (1) and the form (3), the contact surface of the sputtering target 2 is similarly pressed by the pressing surface of the back plate 1 .

<Method for producing sputtering target-back plate assembly> [The first example of the manufacturing method] (step 1) Next, with reference to FIG. 15, the manufacturing method of the sputtering target material-back plate assembly 100 shown in FIG. 2 is demonstrated. First, as shown in FIG. 15(A), a backing plate 1 and a sputtering target 2 having a target surface 7, a target back surface 8 opposite to the plate surface 3 of the backing plate, and an outer peripheral side surface 9 are prepared. Next, as shown in FIG. 15(B) , on the back plate 1, a plate surface 3, a plate back surface 4, a plate side surface 5, and a convex portion 13 to the extent that the hook portion 6 can be formed are formed. As a method of forming the back plate 1 , it is possible to perform cutting processing using a lathe or the like. Furthermore, the plate surface on the inner side of the convex portion 13 also serves as the plate surface 3 . As long as the sputtering target 2 and the backing plate 1 can be joined, the heights of the plate surface 3 on the inner side of the convex portion 13 and the plate surface on the outer side of the convex portion 13 may be the same or different. Next, as shown in FIG. 15(B), considering the height and width of the convex portion 13 formed on the back plate 1, the lower part of the outer peripheral side surface 9 of the sputtering target 2 is removed until the hook-shaped portion formed on the convex portion 13 is removed. The part 6 can be brought into contact with the hook support part 10 formed in the lower part of the outer peripheral side surface 9 of the sputtering target 2 . As a method of removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, it is possible to perform cutting processing using a lathe or the like. In addition, the outer periphery of the removed position also serves as the outer peripheral side surface 9 . Next, as shown in FIG. 15(C) , at the position facing the lower part of the outer peripheral side surface 9 of the sputtering target 2, a hook-shaped part 6 is formed on the convex part 13 formed on the back plate 1. The formation of the hook-shaped portion 6 can be performed by cutting or the like using a lathe. In addition, the hook-shaped portion 6 of the convex portion 13 may be provided over the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and may also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . The outer peripheral side surface 9 of the material 2 is partially provided. Next, as shown in FIG. 15(C) , a hook support portion is formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can abut against the hook portion 6 formed on the convex portion 13 of the back plate 1 10. The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but it must be provided at a position where the hook-shaped portion 6 abuts.

(step 2) Next, as shown in FIG. 15(D) , the backing plate 1 is heated and thermally expanded until the lower part of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the inner side of the hook portion 6 of the backing plate 1 . At this time, as long as the purpose of inserting the lower part of the outer peripheral side surface 9 of the sputtering target 2 into the inner side of the hook-shaped portion 6 of the backing plate 1 is achieved, the sputtering target 2 can also be heated when the backing plate 1 is heated. . Heating can be performed by, for example, a hot press sintering method (HP), a hot isostatic pressure sintering method (HIP), a spark plasma sintering method (SPS), a heating method using a hot plate, or the like. Furthermore, when the intermediate layer is provided at the interface between the back plate 1 and the sputtering target 2, it is preferably performed within the step of FIG. 15(D) or before and after the step of FIG. 15(D) , in other words, preferably in 15(C) and FIG. 15(D), during the process of FIG. 15(D), or during the step between FIG. 15(D) and FIG. 15(E) to form an intermediate layer (not shown in FIG. 15 ) ).

(step 3) Next, as shown in FIG. 15(E), the lower part of the outer peripheral side surface 9 of the sputtering target 2 is inserted into the inner side of the hook portion 6 of the back plate 1, and the target back surface 8 of the sputtering target 2 and the back The plate surface 3 of the plate 1 is merged, and the hook support part 10 of the sputtering target 2 and the hook-shaped part 6 of the back plate 1 are arranged so as to face each other. At this time, as long as the hook portion 6 of the backing plate 1 and the hook supporting portion 10 of the sputtering target 2 are not deformed, the target surface 7 of the sputtering target 2 may be pressed toward the backing plate 1 .

(step 4) Next, as shown in FIG. 15(F), the backing plate 1 is cooled and thermally shrunk, and the hook support portion 10 of the sputtering target 2 is brought into contact with the hook-shaped portion 6 of the backing plate 1, thereby suppressing sputtering. The movement in the lateral direction of the plating target 2 and the movement in the thickness direction of the sputtering target 2 are suppressed, so that the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured. Regarding cooling, for example, cooling can be performed while adjusting the temperature by hot press sintering (HP), hot isostatic pressing (HIP), spark plasma sintering (SPS), or heating using a hot plate. Heating by hot pressing sintering method (HP), hot isostatic pressing sintering method (HIP), spark plasma sintering method (SPS), or heating method using a hot plate can be stopped and natural cooling can be performed.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times. In addition, the position of the convex portion 13 of the back plate 1, the amount of removal of the lower portion of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook portion 6, the position of the hook support portion 10, etc. can be adjusted from the back plate 1. The hook portion 6 side presses the hook support portion 10 side of the sputtering target 2 , and the back surface 3 of the backing plate 1 can also be pressed from the target back surface 8 of the sputtering target 2 .

[The second example of the manufacturing method] (step 1) Next, with reference to FIG. 16, the manufacturing method of the sputtering target material-back plate assembly 201 shown in FIG. 8 is demonstrated. The manufacturing method of the sputtering target-back plate assembly 201 of the present embodiment firstly prepares a back plate 1 having a plate surface 3, a plate back surface 4 and a plate side surface 5, and a target surface 7 as shown in FIG. 16(A). , The back surface 8 of the target material opposite to the plate surface 3 , the sputtering target material 2 on the outer peripheral side 9 , and the clip 14 . Next, as shown in FIG. 16(B), considering the height and width of the clip 14 fixed to the back plate 1, the lower part of the outer peripheral side surface 9 of the sputtering target 2 is removed until the hook portion 6 formed on the clip 14 To the extent that it can contact the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 . As a method of removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, it is possible to perform cutting processing using a lathe or the like. In addition, the outer periphery of the above-mentioned removed position also serves as the outer peripheral side surface 9 . Next, it is considered that the hook portion 6 formed on the clip 14 abuts the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target, and the clip 14 is fixed to the plate surface 3 of the back plate 1 . As a method of fixing the clip 14 to the plate surface 3 of the back plate 1, in addition to fixing by screwing, a joining method such as diffusion bonding and welding can be used. Next, as shown in FIG. 16(C) , a hook portion 6 is formed on the clip 14 fixed to the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2 . The formation of the hook-shaped portion 6 can be performed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the clip 14 can be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and can also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . 2. The outer peripheral side surface 9 is partially provided. Next, as shown in FIG. 16(C), a hook support portion 10 is formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can abut against the hook portion 6 of the clip 14 fixed to the back plate 1. . The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 of the clip 14 abuts.

(step 2) Next, as shown in FIG. 16(D) , the backing plate 1 is heated and thermally expanded until the lower part of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook portion 6 of the clip 14 provided on the backing plate 1. degree of inner side. At this time, as long as the purpose of inserting the lower part of the outer peripheral side surface 9 of the sputtering target 2 into the inner side of the hook-shaped portion 6 of the clip 14 provided on the backing plate 1 is achieved, the sputtering target can also be heated when the backing plate 1 is heated. The target 2 is heated. Heating can be performed by, for example, a hot press sintering method (HP), a hot isostatic pressure sintering method (HIP), a spark plasma sintering method (SPS), a heating method using a hot plate, or the like. Furthermore, when an intermediate layer is provided at the interface between the back plate 1 and the sputtering target 2, it is preferably performed within the step of FIG. 16(D) or before and after the step of FIG. 16(D) , in other words, preferably in 16(C) and FIG. 16(D), during the process of FIG. 16(D), or during the step between FIG. 16(D) and FIG. 16(E) to form an intermediate layer (not shown in FIG. 16 ) ).

(step 3) Next, as shown in FIG. 16(E), the lower part of the outer peripheral side surface 9 of the sputtering target 2 is inserted into the inner side of the hook-shaped portion 6 of the clip 14 provided on the back plate 1, and the target of the sputtering target 2 is inserted. The back surface 8 of the material merges with the plate surface 3 of the back plate 1 , and is arranged so that the hook support portion 10 of the sputtering target 2 and the hook portion 6 of the clip 14 provided on the back plate 1 face each other. At this time, as long as the hook portion 6 of the clip 14 provided on the back plate 1 and the hook support portion 10 of the sputtering target 2 are not deformed, the target surface 7 of the sputtering target 2 can also face the back plate 1 . Apply pressure.

(step 4) Next, as shown in FIG. 16(F), the backing plate 1 is cooled and thermally shrunk, and the hook support portion 10 of the sputtering target 2 is brought into contact with the hook-shaped portion 6 of the clip 14 provided on the backing plate 1. Therefore, the movement of the sputtering target material 2 in the lateral direction is suppressed, and the movement of the sputtering target material 2 in the thickness direction is suppressed, so that the bonding strength between the back plate 1 and the sputtering target material 2 can be ensured. Regarding cooling, for example, cooling can be performed while adjusting the temperature by hot press sintering (HP), hot isostatic pressing (HIP), spark plasma sintering (SPS), or heating using a hot plate. Heating by hot pressing sintering method (HP), hot isostatic pressing sintering method (HIP), spark plasma sintering method (SPS), or heating method using a hot plate can be stopped and natural cooling can be performed.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times. In addition, the position of the clip 14 of the back plate 1, the removal amount of the lower part of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook portion 6, the position of the hook support portion 10, etc. can be adjusted, and can be set on the back plate. The hook portion 6 of the clip 14 of 1 presses the hook support portion 10 side of the sputtering target 2 , and can also be pressed from the back surface 8 of the sputtering target 2 to the plate surface 3 of the backing plate 1 .

[The third example of the manufacturing method] (step 1) Next, with reference to FIG. 17, another form of the manufacturing method of the sputtering target material-back plate assembly 201 shown in FIG. 8 is demonstrated. The manufacturing method of the sputtering target-backing plate assembly 201 of the present embodiment firstly prepares a backing plate 1 including a plate surface 3, a plate back surface 4 and a plate side surface 5, and a target surface 7 as shown in FIG. 17(A). , The target back surface 8 opposite to the above-mentioned plate surface 3 , the sputtering target 2 on the outer peripheral side 9 , and the clip 14 . Next, as shown in FIG. 17(B), considering the height and width of the clip 14 fixed to the back plate 1, the lower part of the outer peripheral side surface 9 of the sputtering target 2 is removed until the hook portion 6 formed on the clip 14 To the extent that it can contact the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 . As a method of removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, it is possible to perform cutting processing using a lathe or the like. In addition, the outer periphery of the above-mentioned removed position also serves as the outer peripheral side surface 9 . Next, at a position facing the lower part of the outer peripheral side surface 9 of the sputtering target 2 , a hook-shaped portion 6 is formed on the clip 14 fixed to the back plate 1 . The formation of the hook-shaped portion 6 can be performed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the clip 14 can be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and can also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . 2. The outer peripheral side surface 9 is partially provided. Next, as shown in FIG. 17(C), a hook support portion 10 is formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can abut against the hook portion 6 of the clip 14 fixed to the back plate 1. . The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 of the clip 14 abuts. Next, as shown in FIG. 17(C), it is considered that the hook portion 6 formed on the clip 14 abuts the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2, and the clip 14 is fixed to the The board surface 3 of the back board 1 . As a method of fixing the clip 14 to the plate surface 3 of the back plate 1, in addition to fixing by screwing, a joining method such as diffusion bonding and welding can be used.

(step 2) Next, as shown in FIG. 17(D) , the backing plate 1 is heated and thermally expanded until the lower part of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook portion 6 of the clip 14 provided on the backing plate 1. degree of inner side. At this time, as long as the purpose of inserting the lower part of the outer peripheral side surface 9 of the sputtering target 2 into the inner side of the hook-shaped portion 6 of the clip 14 provided on the backing plate 1 is achieved, the sputtering target can also be heated when the backing plate 1 is heated. The target 2 is heated. Heating can be performed by, for example, a hot press sintering method (HP), a hot isostatic pressure sintering method (HIP), a spark plasma sintering method (SPS), a heating method using a hot plate, or the like. Furthermore, when the intermediate layer is provided at the interface between the back plate 1 and the sputtering target 2, it is preferably performed within the step of FIG. 17(D) or before and after the step of FIG. 17(D) , in other words, preferably at 17(C) and FIG. 17(D), during the process of FIG. 17(D), or during the step between FIG. 17(D) and FIG. 17(E) to form an intermediate layer (not shown in FIG. 17 ) ).

(step 3) Next, as shown in FIG. 17(E), the lower part of the outer peripheral side surface 9 of the sputtering target 2 is inserted into the inner side of the hook-shaped portion 6 of the clip 14 provided on the back plate 1, and the target of the sputtering target 2 is The back surface 8 of the material merges with the plate surface 3 of the back plate 1 , and is arranged so that the hook support portion 10 of the sputtering target 2 and the hook portion 6 of the clip 14 provided on the back plate 1 face each other. At this time, as long as the hook portion 6 of the clip 14 provided on the back plate 1 and the hook support portion 10 of the sputtering target 2 are not deformed, the target surface 7 of the sputtering target 2 can also face the back plate 1 . Apply pressure.

(step 4) Next, as shown in FIG. 17(F) , the back plate 1 is cooled and thermally shrunk, and the hook support portion 10 of the sputtering target 2 is brought into contact with the hook portion 6 of the clip 14 provided on the back plate 1 Therefore, the movement of the sputtering target material 2 in the lateral direction is suppressed, and the movement of the sputtering target material 2 in the thickness direction is suppressed, so that the bonding strength between the back plate 1 and the sputtering target material 2 can be ensured. Regarding cooling, for example, cooling can be performed while adjusting the temperature by hot press sintering (HP), hot isostatic pressing (HIP), spark plasma sintering (SPS), or heating using a hot plate. Heating by hot pressing sintering method (HP), hot isostatic pressing sintering method (HIP), spark plasma sintering method (SPS), or heating method using a hot plate can be stopped and natural cooling can be performed.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times. In addition, the position of the clip 14 of the back plate 1, the removal amount of the lower part of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook portion 6, the position of the hook support portion 10, etc. can be adjusted, and can be set on the back plate. The hook portion 6 of the clip 14 of 1 presses the hook support portion 10 side of the sputtering target 2 , and can also be pressed from the back surface 8 of the sputtering target 2 to the plate surface 3 of the backing plate 1 .

[The 4th example of the manufacturing method] (step 1) Next, with reference to FIG. 18, the manufacturing method of the sputtering target material-back plate assembly 200 shown in FIG. 7 is demonstrated. The manufacturing method of the sputtering target-backing plate assembly 200 of the present embodiment firstly prepares a backing plate 1 including a plate surface 3, a plate back surface 4 and a plate side surface 5, and a target surface 7 as shown in FIG. 18(A). , The target back surface 8 opposite to the above-mentioned plate surface 3 , the sputtering target 2 on the outer peripheral side 9 , and the clip 14 . Next, as shown in FIG. 18(B), considering the height and width of the clip 14 for fixing the lower part of the outer peripheral side surface 9 of the sputtering target 2 to the back plate 1, the lower part of the outer peripheral side surface 9 of the sputtering target 2 is It is removed until the hook-shaped portion 6 formed on the clip 14 and the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can come into contact with each other. As a method of removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, it is possible to perform cutting processing using a lathe or the like. In addition, the outer periphery of the above-mentioned removed position also serves as the outer peripheral side surface 9 . Next, as shown in FIG. 18(C) , a hook portion 6 is formed on the clip 14 fixed to the backing plate 1 at a position opposite to the lower portion of the outer peripheral side surface 9 of the sputtering target 2 . The hook-shaped portion 6 of the clip 14 can be formed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the clip 14 can be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and can also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . 2. The outer peripheral side surface 9 is partially provided. Next, as shown in FIG. 18(C), a hook support portion 10 is formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can abut against the hook portion 6 of the clip 14 fixed to the back plate 1. . The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 of the clip 14 abuts.

(step 2) As shown in FIG. 18(C) , the sputtering target 2 and the backing plate 1 are arranged so that the plate surface 3 and the target back surface 8 face each other.

(step 3) Next, as shown in FIG. 18(D) , the hook portion 6 formed on the clip 14 is brought into contact with the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 . Next, as shown in FIG.18(E), the clip 14 is arrange|positioned on the board surface 3, and the sputtering target 2 and the clip 14 are arrange|positioned so that the hook support part 10 and the hook-shaped part 6 may oppose.

(step 4) Next, in FIG. 18(E), the clip 14 is fixed to the plate surface 3 of the back plate 1 in the disposition state of step 3, thereby suppressing the movement of the sputtering target 2 in the lateral direction and suppressing the sputtering target The movement in the thickness direction of 2 can ensure the bonding strength of the back plate 1 and the sputtering target 2 . As a method of fixing the clip 14 to the plate surface 3 of the back plate 1, in addition to fixing by screwing, a joining method such as diffusion bonding and welding can be used.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the steps of heating the backing plate 1 and pressing the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed once or repeated as a set Do it more than 2 times.

[The 5th example of the manufacturing method] (step 1) Next, with reference to FIG. 19, the manufacturing method of the joined body 202 which has the structure similar to the sputtering target material-back plate joined body 200 shown in FIG. 7 is demonstrated. The manufacturing method of the sputtering target-back plate assembly 202 of the present embodiment firstly prepares a back plate 1 including a plate surface 3, a plate back surface 4 and a plate side surface 5, and a target surface 7 as shown in FIG. 19(A). , The target back surface 8 opposite to the above-mentioned plate surface 3 , the sputtering target 2 on the outer peripheral side 9 , and the clip 14 . At this time, the bottom of the clip 14 is set to a shape capable of covering the target back surface 8 of the sputtering target 2 . Next, as shown in FIG. 19(B), considering the height and width of the clip 14 for fixing the lower part of the outer peripheral side surface 9 of the sputtering target 2 to the back plate 1, the lower part of the outer peripheral side surface 9 of the sputtering target 2 is It is removed until the hook-shaped portion 6 formed on the clip 14 and the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can come into contact with each other. As a method of removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, it is possible to perform cutting processing using a lathe or the like. In addition, the outer periphery of the above-mentioned removed position also serves as the outer peripheral side surface 9 . Next, as shown in FIG. 19(C) , at a position facing the lower part of the outer peripheral side surface 9 of the sputtering target 2 , a hook-shaped portion 6 is formed on the clip 14 fixed to the back plate 1 . The formation of the hook-shaped portion 6 can be performed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the clip 14 can be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and can also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . 2. The outer peripheral side surface 9 is partially provided. Next, as shown in FIG. 19(C) , a hook support portion 10 is formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can abut against the hook portion 6 of the clip 14 fixed to the back plate 1 . . The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 of the clip 14 abuts.

(step 2) As shown in FIG. 19(C) , the sputtering target 2 and the backing plate 1 are arranged so that the plate surface 3 and the target back surface 8 face each other.

(step 3) Next, as shown in FIG. 19(D) , the hook portion 6 formed on the clip 14 is brought into contact with the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 . At this time, the bottom of the clip 14 covering the target back surface 8 of the sputtering target 2 is preferably in contact with the back surface 8 of the sputtering target 2 . Next, as shown in FIG.19(E), the clip 14 is arrange|positioned on the board surface 3, and the sputtering target 2 and the clip 14 are arrange|positioned so that the hook support part 10 and the hook-shaped part 6 may oppose.

(step 4) Next, in FIG. 19(E), the clip 14 is fixed to the plate surface 3 of the back plate 1 in the disposition state of step 3, thereby suppressing the movement of the sputtering target 2 in the lateral direction and suppressing the sputtering target The movement in the thickness direction of 2 can ensure the bonding strength of the back plate 1 and the sputtering target 2 . As a method of fixing the clip 14 to the plate surface 3 of the back plate 1, in addition to fixing by screwing, a joining method such as diffusion bonding and welding can be used.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times.

[The sixth example of the manufacturing method] (step 1) Next, with reference to FIG. 20, the manufacturing method of the sputtering target material-back plate assembly 300 shown in FIG. 9 is demonstrated. The manufacturing method of the sputtering target-back plate assembly 300 of the present embodiment firstly prepares a back plate 1 including a plate surface 3, a plate back surface 4, and a plate side surface 5, and a target surface as shown in FIG. 20(A) . 7. The sputtering target 2 on the back surface 8 of the target material opposite to the plate surface 3 of the back plate and the outer peripheral side surface 9 . Next, as shown in FIG. 20(B) , a concave portion 17 having a concave portion bottom surface 15 and a concave portion side surface 16 is formed for embedding the target back surface 8 of the sputtering target 2 into the plate surface 3 of the back plate 1 . At this time, the size of the bottom surface 15 of the concave portion of the back plate 1 must take into account the width of the hook portion 6 formed on the side surface 16 of the concave portion of the back plate 1 . As a method of forming the concave portion 17 of the back plate 1, a cutting process using a lathe or the like can be performed. Furthermore, when the backing plate 1 and the sputtering target 2 are fixed, the bottom surface 15 of the concave portion of the backing plate 1 and the target back surface 8 of the sputtering target 2 are preferably abutted. Next, as shown in FIG. 20(B), considering the height of the side surface 16 of the recessed portion of the backing plate 1 and the width of the hook portion 6 formed on the side surface of the recessed portion 16 of the backing plate 1, the outer peripheral side surface 9 of the sputtering target 2 is The lower portion is removed until the hook portion 6 formed on the concave portion side surface 16 of the back plate 1 and the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 can abut. As a method of removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, it is possible to perform cutting processing using a lathe or the like. In addition, the outer periphery of the above-mentioned removed position also serves as the outer peripheral side surface 9 . Next, as shown in FIG. 20(C) , a hook-shaped portion 6 is formed on the concave portion side surface 16 of the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2 . The formation of the hook-shaped portion 6 can be performed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the side surface 16 of the concave portion of the back plate 1 may be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the back plate 1 , the hook portion 6 may also be opposite. It is partially provided on the outer peripheral side surface 9 of the sputtering target 2 . Next, as shown in FIG. 20(C) , a hook support portion 10 is formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where the hook portion 6 of the concave portion side surface 16 of the back plate 1 can abut. The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 abuts.

(step 2) Next, as shown in FIG. 20(D) , the backing plate 1 is heated and thermally expanded until the lower part of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the inner side of the hook-shaped portion 6 of the backing plate 1 . At this time, as long as the purpose of inserting the lower part of the outer peripheral side surface 9 of the sputtering target 2 into the inner side of the hook-shaped portion 6 of the backing plate 1 is achieved, the sputtering target 2 can also be heated when the backing plate 1 is heated. . Heating can be performed by, for example, a hot press sintering method (HP), a hot isostatic pressure sintering method (HIP), a spark plasma sintering method (SPS), a heating method using a hot plate, or the like. Furthermore, when the intermediate layer is provided at the interface between the back plate 1 and the sputtering target 2, it is preferably performed within the step of FIG. 20(D) or before and after the step of FIG. 20(D), in other words, it is preferably 20(C) and FIG. 20(D), during the process of FIG. 20(D), or between FIG. 20(D) and FIG. 20(E), forming an intermediate layer (not shown in FIG. 20 ) ).

(step 3) Next, as shown in FIG. 20(E), the lower part of the outer peripheral side surface 9 of the sputtering target 2 is inserted into the inner side of the hook-shaped portion 6 of the back plate 1, and the target back surface 8 of the sputtering target 2 and the back The bottom surfaces 15 of the concave parts of the plate 1 are merged, and the hook support parts 10 of the sputtering target 2 and the hook-shaped parts 6 of the back plate 1 are arranged to face each other. At this time, as long as the hook portion 6 of the backing plate 1 and the hook supporting portion 10 of the sputtering target 2 are not deformed, the target surface 7 of the sputtering target 2 may be pressed toward the backing plate 1 .

(step 4) Next, as shown in FIG. 20(F), the backing plate 1 is cooled and thermally shrunk, and the hook support portion 10 of the sputtering target 2 is brought into contact with the hook-shaped portion 6 of the backing plate 1, thereby suppressing sputtering. The movement in the lateral direction of the plating target 2 and the movement in the thickness direction of the sputtering target 2 are suppressed, so that the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured. Regarding cooling, for example, cooling can be performed while adjusting the temperature by hot press sintering (HP), hot isostatic pressing (HIP), spark plasma sintering (SPS), or heating using a hot plate. Heating by hot pressing sintering method (HP), hot isostatic pressing sintering method (HIP), spark plasma sintering method (SPS), or heating method using a hot plate can be stopped and natural cooling can be performed.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times. In addition, the size of the bottom surface 15 of the concave portion of the back plate 1, the amount of removal of the lower portion of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook portion 6, the position of the hook support portion 10, etc. can be adjusted from the back plate 1. The hook portion 6 side presses the hook support portion 10 side of the sputtering target 2 , and can also press the concave bottom surface 15 of the backing plate 1 from the target back surface 8 of the sputtering target 2 .

[The seventh example of the manufacturing method] (step 1) Next, referring to FIG. 21 , a description will be given of a method of manufacturing a joined body 301 having a structure similar to that of the sputtering target-back plate joined body 300 shown in FIG. 9 and using the clip 14 . The manufacturing method of the sputtering target-back plate assembly 301 of the present embodiment firstly prepares a back plate 1 including a plate surface 3, a plate back surface 4, and a plate side surface 5, and a target surface 7 as shown in FIG. 21(A) . , The back surface 8 of the target material opposite to the plate surface 3 of the back plate 1 , the sputtering target material 2 on the outer peripheral side 9 , and the clip 14 . Next, as shown in FIG. 21(B) , a concave portion 17 having a concave portion bottom surface 15 and a concave portion side surface 16 is formed for embedding the target back surface 8 of the sputtering target 2 into the plate surface 3 of the back plate 1 . At this time, the size of the bottom surface 15 of the concave portion of the back plate 1 must consider the width of the clip 14 . As a method of forming the concave portion 17 of the back plate 1, a cutting process using a lathe or the like can be performed. Furthermore, when the backing plate 1 and the sputtering target 2 are fixed, the bottom surface 15 of the concave portion of the backing plate 1 and the target back surface 8 of the sputtering target 2 are preferably abutted. Next, as shown in FIG. 21(B), considering the height of the side surface 16 of the concave portion of the back plate 1, the height and width of the clip 14 fixed to the bottom surface 15 of the concave portion or the side surface 16 of the concave portion 16 of the back plate 1, the sputtering target 2 The lower part of the outer peripheral side surface 9 is removed until the hook-shaped part 6 formed on the clip 14 fixed to the recess 17 of the back plate 1 and the hook support part 10 formed on the lower part of the outer peripheral side surface 9 of the sputtering target 2 can abut degree. As a method of removing the lower portion of the outer peripheral side surface 9 of the sputtering target 2, it is possible to perform cutting processing using a lathe or the like. In addition, the outer periphery of the above-mentioned removed position also serves as the outer peripheral side surface 9 . Next, as shown in FIG. 21(B), at a position opposite to the lower part of the outer peripheral side surface 9 of the sputtering target 2, a hook shape is formed on the clip 14 fixed to the bottom surface 15 of the concave portion or the side surface 16 of the concave portion of the back plate 1 Section 6. The formation of the hook-shaped portion 6 can be performed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the clip 14 can be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and can also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . 2. The outer peripheral side surface 9 is partially provided. Next, as shown in FIG. 21(C), at the position where the hook-shaped portion 6 formed on the clip 14 fixed to the bottom surface 15 of the concave portion or the side surface 16 of the concave portion 16 of the back plate 1 can abut on the sputtering target 2 The lower part of the outer peripheral side surface 9 forms the hook support part 10 . The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 of the clip 14 abuts. Next, it is considered that the hook portion 6 formed on the clip 14 is brought into contact with the hook support portion 10 formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2, and the clip 14 is fixed to the bottom surface 15 of the concave portion or the concave portion of the back plate 1. Side 16. As a method of fixing the clip 14 to the bottom surface 15 of the recessed portion or the side surface 16 of the recessed portion of the back plate 1 , in addition to fixing by screwing, a bonding method such as diffusion bonding and welding may be used.

(step 2) Next, as shown in FIG. 21(D), the backing plate 1 is heated and thermally expanded until the lower part of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook portion 6 of the clip 14 provided on the backing plate 1. degree of inner side. At this time, as long as the purpose of inserting the lower part of the outer peripheral side surface 9 of the sputtering target 2 into the inner side of the hook-shaped portion 6 of the clip 14 provided on the backing plate 1 is achieved, the sputtering target can also be heated when the backing plate 1 is heated. The target 2 is heated. Heating can be performed by, for example, a hot press sintering method (HP), a hot isostatic pressure sintering method (HIP), a spark plasma sintering method (SPS), a heating method using a hot plate, or the like. Furthermore, when the intermediate layer is provided at the interface between the back plate 1 and the sputtering target 2, it is preferably performed within the step of FIG. 21(D) or before and after the step of FIG. 21(D), in other words, preferably in 21(C) and FIG. 21(D), during the process of FIG. 21(D), or during the step between FIG. 21(D) and FIG. 21(E), forming an intermediate layer (not shown in FIG. 21 ) ).

(step 3) Next, as shown in FIG. 21(E), the lower part of the outer peripheral side surface 9 of the sputtering target 2 is inserted into the inner side of the hook portion 6 of the clip 14 provided on the back plate 1, and the target of the sputtering target 2 is The back surface 8 of the material merges with the bottom surface 15 of the recessed portion of the backing plate 1 , and is arranged so that the hook support portion 10 of the sputtering target 2 and the hook-shaped portion 6 of the clip 14 provided in the backing plate 1 face each other. At this time, as long as the hook portion 6 of the clip 14 provided on the back plate 1 and the hook support portion 10 of the sputtering target 2 are not deformed, the target surface 7 of the sputtering target 2 can also face the back plate 1 . Apply pressure.

(step 4) Next, as shown in FIG. 21(F) , the backing plate 1 is cooled and thermally shrunk, and the hook support portion 10 of the sputtering target 2 is brought into contact with the hook-shaped portion 6 of the clip 14 provided on the backing plate 1 . Therefore, the movement of the sputtering target material 2 in the lateral direction is suppressed, and the movement of the sputtering target material 2 in the thickness direction is suppressed, so that the bonding strength between the back plate 1 and the sputtering target material 2 can be ensured. Regarding cooling, for example, cooling can be performed while adjusting the temperature by hot press sintering (HP), hot isostatic pressing (HIP), spark plasma sintering (SPS), or heating using a hot plate. Heating by hot pressing sintering method (HP), hot isostatic pressing sintering method (HIP), spark plasma sintering method (SPS), or heating method using a hot plate can be stopped and natural cooling can be performed.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times. In addition, the size of the bottom surface 15 of the concave portion of the back plate 1, the amount of removal of the lower portion of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook portion 6, the position of the hook support portion 10, etc. can be adjusted. The hook portion 6 of the clip 14 of the plate 1 presses the hook support portion 10 side of the sputtering target 2 , and can also be pressed from the target back surface 8 of the sputtering target 2 to the concave bottom surface 15 of the back plate 1 .

[The 8th example of the manufacturing method] (step 1) Next, referring to FIG. 22 , a description will be given of a method of manufacturing a joined body 401 having a structure similar to that of the sputtering target-backplate joined body 400 shown in FIG. 10 and without using a clip. As shown in FIG. 22(A) , in the manufacturing method of the sputtering target-back plate assembly 401 of the present embodiment, a back plate 1 having a plate surface 3 , a plate back surface 4 , and a plate side surface 5 , and a target surface are prepared first. 7. The sputtering target 2 on the back surface 8 of the target material opposite to the plate surface 3 of the back plate and the outer peripheral side surface 9 . Next, as shown in FIG. 22(B) , a concave portion 17 having a concave bottom surface 15 and a concave portion side surface 16 is formed for embedding the target back surface 8 of the sputtering target 2 into the plate surface 3 of the back plate 1 . At this time, the size of the bottom surface 15 of the concave portion of the back plate 1 must consider the width of the hook portion 6 formed on the side surface 16 of the concave portion of the back plate 1 . As a method of forming the concave portion 17 of the back plate 1, a cutting process using a lathe or the like can be performed. Furthermore, when the backing plate 1 and the sputtering target 2 are fixed, the bottom surface 15 of the concave portion of the backing plate 1 is preferably in contact with the target back surface 8 of the sputtering target 2 . Next, as shown in FIG. 22(C) , a hook-shaped portion 6 is formed on the concave portion side surface 16 of the backing plate 1 at a position facing the lower portion of the outer peripheral side surface 9 of the sputtering target 2 . The formation of the hook-shaped portion 6 can be performed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the side surface 16 of the concave portion of the back plate 1 may be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the back plate 1 , the hook portion 6 may also be opposite. It is partially provided on the outer peripheral side surface 9 of the sputtering target 2 . Next, as shown in FIG. 22(C) , a hook support portion 10 is formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where the hook portion 6 of the concave portion side surface 16 of the back plate 1 can abut. The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 abuts.

(step 2) Next, as shown in FIG. 22(D) , the backing plate 1 is heated and thermally expanded until the lower part of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the inner side of the hook portion 6 of the backing plate 1 . At this time, as long as the purpose of inserting the lower part of the outer peripheral side surface 9 of the sputtering target 2 into the inner side of the hook-shaped portion 6 of the backing plate 1 is achieved, the sputtering target 2 can also be heated when the backing plate 1 is heated. . Heating can be performed by, for example, a hot press sintering method (HP), a hot isostatic pressure sintering method (HIP), a spark plasma sintering method (SPS), a heating method using a hot plate, or the like. Furthermore, when the intermediate layer is provided at the interface between the back plate 1 and the sputtering target 2, it is preferably performed within the step of FIG. 22(D) or before and after the step of FIG. 22(D), in other words, it is preferable to 22(C) and FIG. 22(D), during the process of FIG. 22(D), or during the step between FIG. 22(D) and FIG. 22(E), forming an intermediate layer (not shown in FIG. 22) ).

(step 3) Next, as shown in FIG. 22(E), the lower part of the outer peripheral side surface 9 of the sputtering target 2 is inserted into the inner side of the hook-shaped portion 6 of the back plate 1, and the target back surface 8 of the sputtering target 2 and the back The bottom surfaces 15 of the concave parts of the plate 1 are merged, and the hook support parts 10 of the sputtering target 2 and the hook-shaped parts 6 of the back plate 1 are arranged to face each other. At this time, as long as the hook portion 6 of the backing plate 1 and the hook supporting portion 10 of the sputtering target 2 are not deformed, the target surface 7 of the sputtering target 2 may be pressed toward the backing plate 1 .

(step 4) Next, as shown in FIG. 22(F) , the backing plate 1 is cooled and thermally shrunk, and the hook support portion 10 of the sputtering target 2 is brought into contact with the hook-shaped portion 6 of the backing plate 1, thereby suppressing sputtering. The movement in the lateral direction of the plating target 2 and the movement in the thickness direction of the sputtering target 2 are suppressed, so that the bonding strength between the backing plate 1 and the sputtering target 2 can be ensured. Regarding cooling, for example, cooling can be performed while adjusting the temperature by hot press sintering (HP), hot isostatic pressing (HIP), spark plasma sintering (SPS), or heating using a hot plate. Heating by hot pressing sintering method (HP), hot isostatic pressing sintering method (HIP), spark plasma sintering method (SPS), or heating method using a hot plate can be stopped and natural cooling can be performed.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times. In addition, by adjusting the size of the concave bottom surface 15 of the backing plate 1, the position of the hook-shaped part 6, the position of the hook support part 10, etc., the hook-shaped part 6 of the backing plate 1 can be supported by the hook of the sputtering target 2 from the side. Pressing is applied to the side of the portion 10 , and it is also possible to press the bottom surface 15 of the concave portion of the backing plate 1 from the target back surface 8 of the sputtering target 2 .

[The ninth example of the manufacturing method] (step 1) Next, with reference to FIG. 23, the manufacturing method of the sputtering target material-back plate assembly 400 shown in FIG. 10 is demonstrated. The manufacturing method of the sputtering target-back plate assembly 400 of the present embodiment firstly prepares a back plate 1 including a plate surface 3, a plate back surface 4, and a plate side surface 5, and a target surface 7 as shown in FIG. 23(A) . , The target back surface 8 opposite to the plate surface 3 of the back plate, the sputtering target 2 on the outer peripheral side 9 , and the clip 14 . Next, as shown in FIG. 23(B), a concave portion 17 having a concave portion bottom surface 15 and a concave portion side surface 16 is formed for inserting the target back surface 8 of the sputtering target 2 into the plate surface 3 of the back plate 1. At this time, the size of the bottom surface 15 of the concave portion of the back plate 1 must consider the width of the clip 14 . As a method of forming the concave portion 17 of the back plate 1, a cutting process using a lathe or the like can be performed. Furthermore, when the backing plate 1 and the sputtering target 2 are fixed, the bottom surface 15 of the concave portion of the backing plate 1 and the target back surface 8 of the sputtering target 2 are preferably abutted. Next, as shown in FIG. 23(B), at a position opposite to the lower part of the outer peripheral side surface 9 of the sputtering target 2, a hook shape is formed on the clip 14 fixed to the bottom surface 15 of the recessed part or the side surface 16 of the recessed part of the back plate 1 Section 6. The formation of the hook-shaped portion 6 can be performed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the clip 14 can be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and can also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . 2. The outer peripheral side surface 9 is partially provided. Next, as shown in FIG. 23(B), the sputtering target 2 is placed at a position where it can abut on the hook-shaped portion 6 formed on the clip 14 fixed to the bottom surface 15 of the concave portion or the side surface 16 of the concave portion of the back plate 1. The lower part of the outer peripheral side surface 9 forms the hook support part 10 . The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 of the clip 14 abuts. Next, as shown in FIG. 23(C), it is considered that the hook portion 6 formed on the clip 14 abuts the hook support portion 10 formed on the lower part of the outer peripheral side surface 9 of the sputtering target, and the clip 14 is fixed to the back. The bottom surface 15 of the concave portion or the side surface 16 of the concave portion of the plate 1 . As a method of fixing the clip 14 to the bottom surface 15 of the recessed portion or the side surface 16 of the recessed portion of the back plate 1 , in addition to fixing by screwing, a bonding method such as diffusion bonding and welding may be used.

(step 2) Next, as shown in FIG. 23(D) , the backing plate 1 is heated and thermally expanded until the lower part of the outer peripheral side surface 9 of the sputtering target 2 can be inserted into the hook portion 6 of the clip 14 provided on the backing plate 1. degree of inner side. At this time, as long as the purpose of inserting the lower part of the outer peripheral side surface 9 of the sputtering target 2 into the inner side of the hook-shaped portion 6 of the clip 14 provided on the backing plate 1 is achieved, the sputtering target can also be heated when the backing plate 1 is heated. The target 2 is heated. Heating can be performed by, for example, a hot press sintering method (HP), a hot isostatic pressure sintering method (HIP), a spark plasma sintering method (SPS), a heating method using a hot plate, or the like. Furthermore, when disposing an intermediate layer at the interface between the back plate 1 and the sputtering target 2, it is preferably performed within the step of FIG. 23(D) or before and after the step of FIG. 23(D) , in other words, preferably at 23(C) and FIG. 23(D), during the process of FIG. 23(D), or during the step between FIG. 23(D) and FIG. 23(E), forming an intermediate layer (not shown in FIG. 23 ) ).

(step 3) Next, as shown in FIG. 23(E), the lower part of the outer peripheral side surface 9 of the sputtering target 2 is inserted into the inner side of the hook-shaped portion 6 of the clip 14 provided on the back plate 1, and the target of the sputtering target 2 is inserted. The back surface 8 of the material merges with the bottom surface 15 of the recessed portion of the backing plate 1 , and is arranged so that the hook support portion 10 of the sputtering target 2 and the hook-shaped portion 6 of the clip 14 provided in the backing plate 1 face each other. At this time, as long as the hook portion 6 of the clip 14 provided on the back plate 1 and the hook support portion 10 of the sputtering target 2 are not deformed, the target surface 7 of the sputtering target 2 can also face the back plate 1 . Apply pressure.

(step 4) Next, as shown in FIG. 23(F), the backing plate 1 is cooled and thermally shrunk, and the hook support portion 10 of the sputtering target 2 is brought into contact with the hook portion 6 of the clip 14 provided on the backing plate 1. Therefore, the movement of the sputtering target material 2 in the lateral direction is suppressed, and the movement of the sputtering target material 2 in the thickness direction is suppressed, so that the bonding strength between the back plate 1 and the sputtering target material 2 can be ensured. Regarding cooling, for example, cooling can be performed while adjusting the temperature by hot press sintering (HP), hot isostatic pressing (HIP), spark plasma sintering (SPS), or heating using a hot plate. Heating by hot pressing sintering method (HP), hot isostatic pressing sintering method (HIP), spark plasma sintering method (SPS), or heating method using a hot plate can be stopped and natural cooling can be performed.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times. In addition, the size of the bottom surface 15 of the concave portion of the back plate 1, the amount of removal of the lower portion of the outer peripheral side surface 9 of the sputtering target 2, the position of the hook portion 6, the position of the hook support portion 10, etc. can be adjusted. The hook portion 6 of the clip 14 of the plate 1 presses the hook support portion 10 side of the sputtering target 2 , and can also be pressed from the target back surface 8 of the sputtering target 2 to the concave bottom surface 15 of the back plate 1 .

[The tenth example of the manufacturing method] (step 1) Next, with reference to FIG. 24, another aspect of the manufacturing method of the sputtering target material-back plate assembly 400 shown in FIG. 10 is demonstrated. The manufacturing method of the sputtering target material-backing plate assembly 400 of the present embodiment firstly prepares a backing plate 1 including a plate surface 3, a plate back surface 4 and a plate side surface 5, and a target surface 7 as shown in FIG. 24(A) . , The target back surface 8 opposite to the above-mentioned plate surface 3 , the sputtering target 2 on the outer peripheral side 9 , and the clip 14 . Next, as shown in FIG. 24(B) , a concave portion 17 having a concave portion bottom surface 15 and a concave portion side surface 16 is formed for embedding the target back surface 8 of the sputtering target 2 into the plate surface 3 of the back plate 1 . At this time, the size of the bottom surface 15 of the concave portion of the back plate 1 must consider the width of the clip 14 . As a method of forming the concave portion 17 of the back plate 1, a cutting process using a lathe or the like can be performed. Furthermore, when the backing plate 1 and the sputtering target 2 are fixed, the bottom surface 15 of the concave portion of the backing plate 1 and the target back surface 8 of the sputtering target 2 are preferably abutted. Next, as shown in FIG. 24(B) , the hook portion 6 is formed on the clip 14 fixed to the back plate 1 so as to face the outer peripheral side surface 9 of the sputtering target 2 . The hook-shaped portion 6 of the clip 14 can be formed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the clip 14 can be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and can also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . 2. The outer peripheral side surface 9 is partially provided. Next, as shown in FIG. 24(B) , a hook support portion 10 is formed on the outer peripheral side surface 9 of the sputtering target 2 at a position capable of abutting against the hook portion 6 of the clip 14 fixed to the back plate 1 . The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 of the clip 14 abuts.

(step 2) As shown in FIG. 24(C), the sputtering target 2 and the backing plate 1 are arranged so that the plate surface 3 and the target back surface 8 face each other.

(step 3) Next, as shown in FIG.24(C), the hook-shaped part 6 formed in the clip 14 is made to contact the hook support part 10 formed in the lower part of the outer peripheral side surface 9 of a sputtering target material. Next, as shown in FIG. 24(D) , the clip 14 is arranged on the plate surface 3, and the sputtering target 2 and the clip 14 are arranged so that the hook support portion 10 and the hook portion 6 face each other.

(step 4) Next, in FIG. 24(D), the clip 14 is fixed to the bottom surface 15 of the concave portion or the side surface 16 of the concave portion of the back plate 1 in the disposition state of step 3, thereby suppressing the movement of the sputtering target 2 in the lateral direction, and suppressing the The movement in the thickness direction of the sputtering target 2 can ensure the bonding strength between the backing plate 1 and the sputtering target 2 . As a method of fixing the clip 14 to the plate surface 3 of the back plate 1, in addition to fixing by screwing, a joining method such as diffusion bonding and welding can be used.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the back plate 1 and the pressing of the back plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target and the back plate are performed once or repeatedly as a set more than 2 times.

[The 11th example of the manufacturing method] (step 1) Next, with reference to FIG. 25 , a method of manufacturing a joined body 402 having a structure similar to that of the sputtering target-back plate joined body 400 shown in FIG. 10 will be described. As shown in FIG. 25(A) , in the manufacturing method of the sputtering target-back plate assembly 402 of the present embodiment, a back plate 1 including a plate surface 3 , a plate back surface 4 and a plate side surface 5 is prepared, and a target surface 7 is prepared. , The target back surface 8 opposite to the above-mentioned plate surface 3 , the sputtering target 2 on the outer peripheral side 9 , and the clip 14 . At this time, the bottom of the clip 14 is set to a shape capable of covering the target back surface 8 of the sputtering target 2 . Next, as shown in FIG. 25(B) , a concave portion 17 having a concave bottom surface 15 and a concave portion side surface 16 is formed for embedding the target back surface 8 of the sputtering target 2 into the plate surface 3 of the back plate 1 . At this time, the size of the bottom surface 15 of the concave portion of the back plate 1 must consider the width of the clip 14 . As a method of forming the concave portion 17 of the back plate 1, a cutting process using a lathe or the like can be performed. Furthermore, when the backing plate 1 and the sputtering target 2 are fixed, the bottom surface 15 of the concave portion of the backing plate 1 and the target back surface 8 of the sputtering target 2 are preferably abutted. Next, as shown in FIG. 25(B) , the hook portion 6 is formed on the clip 14 fixed to the back plate 1 so as to face the outer peripheral side surface 9 of the sputtering target 2 . The hook-shaped portion 6 of the clip 14 can be formed by cutting or the like using a lathe. Furthermore, the hook-shaped portion 6 of the clip 14 can be disposed on the entire circumference relative to the outer peripheral side surface 9 of the sputtering target 2 , and can also be relative to the sputtering target as long as the sputtering target 2 does not peel off from the back plate 1 . 2. The outer peripheral side surface 9 is partially provided. Next, as shown in FIG. 25(B) , a hook support portion 10 is formed on the lower portion of the outer peripheral side surface 9 of the sputtering target 2 at a position where it can abut against the hook portion 6 of the clip 14 fixed to the back plate 1 . . The hook support portion 10 can be formed by cutting using a lathe or the like. Furthermore, the hook support portion 10 of the sputtering target 2 can be provided on the entire circumference of the outer peripheral side surface 9 of the sputtering target 2 , as long as the sputtering target 2 does not peel off from the backing plate 1 , it can also be used in the sputtering target. The outer peripheral side surface 9 of the material 2 is partially provided, but must be provided at a position where the hook-shaped portion 6 of the clip 14 abuts.

(step 2) As shown in FIG. 25(C) , the sputtering target 2 and the backing plate 1 are arranged so that the plate surface 3 and the target back surface 8 face each other.

(step 3) Next, as shown in FIG.25(C), the hook-shaped part 6 formed in the clip 14 is made to contact the hook support part 10 formed in the lower part of the outer peripheral side surface 9 of the sputtering target material. At this time, the bottom of the clip 14 covering the target back surface 8 of the sputtering target 2 is preferably in contact with the back surface 8 of the sputtering target 2 . Next, as shown in FIG. 25(D), the clip 14 is arranged on the plate surface 3, the clip 14 is fitted into the recess 17, and the sputtering target 2 and the sputtering target 2 are arranged so that the hook support portion 10 and the hook portion 6 face each other. Clip 14.

(step 4) Next, in FIG. 25(D), the clip 14 is fixed to the bottom surface 15 of the recess or the side surface 16 of the recess 1 in the disposition state of step 3, thereby suppressing the movement of the sputtering target 2 in the side surface direction, and suppressing the The movement in the thickness direction of the sputtering target 2 can ensure the bonding strength between the backing plate 1 and the sputtering target 2 . As a method of fixing the clip 14 to the plate surface 3 of the back plate 1, in addition to fixing by screwing, a joining method such as diffusion bonding and welding can be used.

(Additional step after step 4) Furthermore, to further ensure the adhesion between the backing plate 1 and the sputtering target 2, after step 4, the target surface 7 of the sputtering target 2 can be pressed against the backing plate 1 or the sputtering target can be pressed. 2 and the heating of the backing plate 1 and the pressing of the backing plate 1 from the target surface 7 of the sputtering target 2, and the cooling steps of the sputtering target 2 and the backing plate 1 are performed as a set once or Repeat more than 2 times.

(The first example of the recovery method of sputtering targets) The case where the sputtering target-back plate assembly of the present embodiment is installed and used in a sputtering apparatus and the sputtering target is consumed will be described. The recovery method of the sputtering target material of this embodiment includes: step A, which is to heat the sputtering target material-back plate joint body of this embodiment to thermally expand until the hook-shaped portion 6 leaves the hook support portion 10 ; and step B , which is to remove the sputtering target 2 from the backplate 1 and recover the sputtering target from the sputtering target-backplate assembly. The form of removing the sputtering target 2 includes a form of directly removing the sputtering target 2 and a form of removing the sputtering target 2 by applying an impact.

(The second example of the recovery method of sputtering targets) The method for recovering the sputtering target material in the sputtering target material with the clip 14 fixed on the back plate 1 and the back plate joint body includes removing the clip 14 from the back plate 1 and recovering the sputtering material from the sputtering target material material and the back plate joint body. Step C of Target 2. The form in which the sputtering target 2 is removed includes a form in which the sputtering target 2 is directly removed and a form in which an impact is applied to the sputtering target 2 to remove. [Example]

Hereinafter, although an Example is shown and this invention is demonstrated in detail, this invention is not limited to an Example, and should be interpreted.

(Example 1) A joined body corresponding to FIG. 9 was produced. First, a ruthenium sputtering target 2 of Φ156×9t (unit: mm) and a brass backing plate 1 of Φ240×20t (unit: mm) produced by the melting method were prepared. Regarding the coefficient of linear expansion, ruthenium is 6.75×10 ^-6 /°C, and brass is 21.2×10 ^-6 /°C. Next, using a lathe, an annular recessed portion of 0.5 mm of the hook support portion 10 was formed on the outer peripheral side surface 9 of the sputtering target 2 along the circumferential direction of the side surface. Thereby, the annular convex part which protrudes based on the bottom surface of the annular concave part is formed on the outer peripheral side surface 9 of the sputtering target 2 . Next, at the position where the sputtering target 2 is provided on the backing plate 1 , a concave portion 17 having a diameter of 0.4 mm smaller than the sputtering target 2 and a depth of 4 mm is machined by a lathe. Furthermore, the hook support part 10 of 0.5 mm was formed in the recessed part inner peripheral side surface 16 of the backing plate in the position corresponding to the hook-shaped part 6 of the sputtering target 2. Next, the bottom surface 15 of the concave portion of the back plate 1 is filled with a Ni plate with a thickness of 0.1 mm and a small amount of In powder. The small amount of In powder fills the gap around the Ni plate. Next, the sputtering target 2 is set on the concave portion 17 of the back plate 1 . Next, after the temperature was raised to 250° C. under a reduced pressure gas atmosphere of 10 Pa or less using a spark plasma sintering machine, the concave portion 17 of the back plate was filled with the sputtering target 2 . After filling, pressure was applied from the target surface 7 of the sputtering target 2 at 10 MPa, and the temperature was further increased to 400° C., held for 1 hour to perform diffusion bonding, and then cooled and abutted. The results are shown in FIG. 26 . The joined body has a structure in which the concavo-convex portion of the outer peripheral side surface 9 of the sputtering target 2 and the concave-convex portion of the concave portion inner peripheral side surface 16 of the back plate 1 are fitted into each other. As shown in FIG. 26 , the outer peripheral side surface 9 of the sputtering target 2 and the inner peripheral side surface 16 of the concave portion 17 of the back plate 1 are fixed by abutting, and the back surface 8 of the target material is also filled with Ni and In without any gap, and the thermal conductivity is good. Diffusion bonding is performed smoothly, and cracking of the sputtering target 2 does not occur.

(Comparative Example 1) A flexural strength of 138 MPa was prepared as a Φ70×7t (unit: mm) Al-30 atomic % Sc sputtering target, and a Φ80×8t (unit: mm) Al alloy, namely the back of A6061 plate. Regarding the coefficient of linear expansion, Sc in Al-30 atomic % was 13.5×10 ^-6 /°C, and A6061 was 23.6×10 ^-6 /°C. Next, an Al-30 atomic % Sc sputtering target is set on the backing plate 1 . Next, the temperature was raised to 500° C. in a vacuum atmosphere using a spark plasma sintering machine, and then the target surface of the sputtering target was pressurized at 10 MPa and held for 1 hour to perform diffusion bonding. The results are shown in FIG. 27 . As shown in FIG. 27 , although the sputtering target and the backing plate are joined, the difference in coefficient of linear expansion is large. Therefore, when the backing plate is cooled, the sputtering target is subjected to compressive stress and cracked.

(Comparative Example 2) A flexural strength of 138 MPa, Φ70×7t (unit: mm), Al-30 atomic % Sc sputtering target, and Φ80×8t (unit: mm) Al alloy, that is, aluminum bronze were prepared. backplane. Regarding the coefficient of linear expansion, Sc of Al-30 atomic % is 13.5×10 ^-6 /°C, and aluminum bronze is 16.5×10 ^-6 /°C. Next, an Al-30 atomic % Sc sputtering target is set on the backing plate 1 . Next, the temperature was raised to 500° C. in a vacuum atmosphere using a spark plasma sintering machine, and then the target surface of the sputtering target was pressurized at 10 MPa and held for 1 hour to perform diffusion bonding. The results are shown in FIG. 28 . As shown in Fig. 28, although the linear expansion coefficient of the sputtering target and the linear expansion coefficient of the backing plate were attempted to be closer to those of Comparative Example 1, there was still a difference between the linear expansion coefficients of the sputtering target and the backing plate. Therefore, the sputtering target 2 is cracked due to the compressive stress, and the bonding to the backing plate is insufficient, so that the sputtering target is peeled off from the backing plate.

(Comparative Example 3) A ruthenium sputtering target of Φ194×10t (unit: mm) and an oxygen-free copper backplate of Φ240×20t (unit: mm) were prepared by a sintering method. Regarding the coefficient of linear expansion, ruthenium was 6.75×10 ^-6 /°C, and oxygen-free copper was 16.2×10 ^-6 /°C. Next, a ruthenium sputtering target is set on the backing plate. Next, the temperature was raised to 700° C. in a vacuum atmosphere using a spark plasma sintering machine, and then the target surface of the sputtering target was pressurized at 10 MPa and held for 1 hour to perform diffusion bonding. The results are shown in FIG. 29 . As shown in FIG. 29 , there is a difference between the linear expansion coefficients of the sputtering target and the backing plate, so that the sputtering target is cracked due to compressive stress.

(Comparative Example 4) A ruthenium sputtering target of Φ180×5t (unit: mm) and a backing plate were prepared by the sintering method. The backing plate was formed on a container with a thickness of 15 mm called CAN made of oxygen-free copper. Those with a concave portion of Φ180.1 mm and a depth of 10 mm. Regarding the coefficient of linear expansion, ruthenium was 6.75×10 ^-6 /°C, and oxygen-free copper was 16.2×10 ^-6 /°C. Next, after wrapping the sputtering target in the CAN, a Φ180×5t cover made of oxygen-free copper was placed on the sputtering target, and the CAN was vacuum-sealed. Next, after the temperature was raised to 500° C. using a HIP apparatus, the CAN was pressurized at 100 MPa to perform diffusion bonding. At this time, all surfaces of the container are pressurized, and the container and the sputtering target are diffusion bonded. After the diffusion bonding, the sputtering target 2 and the backing plate are cut using a lathe. The results are shown in FIG. 30 . As shown in Fig. 30, diffusion bonding occurs, but there is a difference between the linear expansion coefficients of the sputtering target and the backing plate. Therefore, the sputtering target is subjected to compressive stress, and fine cracks appear radially from the center to the periphery. and rupture.

1: Backplane 2: Sputtering target 3: The surface of the backplane 4: The back of the board of the backplane 5: The side of the back panel 6: Hook part 7: Target surface of sputtering target 8: The back of the target of the sputtering target 9: Outer peripheral side of sputtering target 10: Hook support part 11: Screw position 12: middle layer 12a: The intermediate layer at the interface with the backplane 12b: interlayer disposed at the interface with the sputtering target 13: The convex part on the surface of the back plate 14: clip 15: The bottom surface of the concave part of the back plate 16: The side of the concave part of the back plate 17: Recess 50: Sputtering target-back plate joint 60: Sputtering target-back plate joint 100: Sputtering target-back plate joint 101: Sputtering target-back plate joint 200: Sputtering target-back plate joint 201: Sputtering target-backplane joint 202: Sputtering target-backplate joint 300: Sputtering target-back plate joint 301: Sputtering target-back plate joint 400: Sputtering target-back plate joint 401: Sputtering target-back plate joint 402: Sputtering target-back plate joint 500: Sputtering target-back plate joint 501: Sputtering target-backplane joint 600: Sputtering target-backplane joint 601: Sputtering target-backplane joint

FIG. 1 is a schematic plan view of a disk-shaped sputtering target-back plate assembly of the present embodiment. Fig. 2 is a schematic cross-sectional view taken along A-A of the first example of Fig. 1, showing a form 1-1. Fig. 2(A) is a schematic view of another form (1) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(B) is a schematic view of another form (2) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(C) is a schematic view of another form (3) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(D) is a schematic view of another form (4) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(E) is a schematic view of another form (5) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(F) is a schematic view of another form (6) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(G) is a schematic view of another form (7) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(H) is a schematic view of another form (8) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(I) is a schematic view of another form (9) of the portion surrounded by the dotted line in Fig. 2 . FIG. 2(J) is a schematic view of another form ( 10 ) of the portion surrounded by the dotted line in FIG. 2 . Fig. 2(K) is a schematic view of another form (11) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(L) is a schematic view of another form (12) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(M) is a schematic view of another form (13) of the portion surrounded by the dotted line in Fig. 2 . Fig. 2(N) is a schematic view of another form (14) of the portion surrounded by the dotted line in Fig. 2 . FIG. 3 is a schematic plan view of the sputtering target-back plate assembly in the form of a rectangular plate according to the present embodiment. FIG. 4 is a schematic plan view of a disk-shaped sputtering target-back plate assembly according to another aspect of the present embodiment. Fig. 5 is a schematic cross-sectional view taken along A-A of the first example of Fig. 4, and shows a form 1-2. Fig. 5(A) is a schematic view of another form (1) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(B) is a schematic view of another form (2) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(C) is a schematic view of another form (3) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(D) is a schematic view of another form (4) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(E) is a schematic view of another form (5) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(F) is a schematic view of another form (6) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(G) is a schematic view of another form (7) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(H) is a schematic view of another form (8) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(I) is a schematic view of another form (9) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(J) is a schematic view of another form (10) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(K) is a schematic view of another form (11) of the portion surrounded by the dotted line in Fig. 5 . Fig. 5(L) is a schematic view of another form (12) of the portion surrounded by the dotted line in Fig. 5 . FIG. 6 is a schematic plan view of a rectangular plate-shaped sputtering target-back plate assembly according to another aspect of the present embodiment. Fig. 7 is a schematic cross-sectional view of Form 2-1. Fig. 7(A) is a schematic view of another form (1) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(B) is a schematic view of another form (2) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(C) is a schematic view of another form (3) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(D) is a schematic view of another form (4) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(E) is a schematic view of another form (5) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(F) is a schematic view of another form (6) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(G) is a schematic view of another form (7) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(H) is a schematic view of another form (8) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(I) is a schematic view of another form (9) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(J) is a schematic view of another form (10) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(K) is a schematic view of another form (11) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(L) is a schematic view of another form (12) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(M) is a schematic view of another form (13) of the portion surrounded by the dotted line in Fig. 7 . Fig. 7(N) is a schematic view of another form (14) of the portion surrounded by the dotted line in Fig. 7 . Fig. 8 is a schematic cross-sectional view of Form 3-1. Fig. 8(A) is a schematic view of another form (1) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(B) is a schematic view of another form (2) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(C) is a schematic view of another form (3) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(D) is a schematic view of another form (4) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(E) is a schematic view of another form (5) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(F) is a schematic view of another form (6) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(G) is a schematic view of another form (7) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(H) is a schematic view of another form (8) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(I) is a schematic view of another form (9) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(J) is a schematic view of another form (10) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(K) is a schematic view of another form (11) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(L) is a schematic view of another form (12) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(M) is a schematic view of another form (13) of the portion surrounded by the dotted line in Fig. 8 . Fig. 8(N) is a schematic view of another form (14) of the portion surrounded by the dotted line in Fig. 8 . Fig. 9 is a schematic cross-sectional view of Form 4-1. Fig. 9(A) is a schematic view of another form (1) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(B) is a schematic view of another form (2) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(C) is a schematic view of another form (3) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(D) is a schematic view of another form (4) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(E) is a schematic view of another form (5) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(F) is a schematic view of another form (6) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(G) is a schematic view of another form (7) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(H) is a schematic view of another form (8) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(I) is a schematic view of another form (9) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(J) is a schematic view of another form (10) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(K) is a schematic view of another form (11) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(L) is a schematic view of another form (12) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(M) is a schematic view of another form (13) of the portion surrounded by the dotted line in Fig. 9 . Fig. 9(N) is a schematic view of another form (14) of the portion surrounded by the dotted line in Fig. 9 . Fig. 10 is a schematic cross-sectional view of Form 5-1. Fig. 10(A) is a schematic view of another form (1) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(B) is a schematic view of another form (2) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(C) is a schematic view of another form (3) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(D) is a schematic view of another form (4) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(E) is a schematic view of another form (5) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(F) is a schematic view of another form (6) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(G) is a schematic view of another form (7) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(H) is a schematic view of another form (8) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(I) is a schematic view of another form (9) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(J) is a schematic view of another form (10) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(K) is a schematic view of another form (11) of the portion surrounded by the dotted line in Fig. 10 . FIG. 10(L) is a schematic diagram of another form ( 12 ) of the portion surrounded by the dotted line in FIG. 10 . Fig. 10(M) is a schematic view of another form (13) of the portion surrounded by the dotted line in Fig. 10 . Fig. 10(N) is a schematic view of another form (14) of the portion surrounded by the dotted line in Fig. 10 . Fig. 11 is a schematic cross-sectional view of the form 6-1, the form 7-1 or the form 8-1. Fig. 12 is a schematic cross-sectional view of Form 6-2, Form 7-2 or Form 8-2. Fig. 13 is a schematic cross-sectional view of Form 9-1. Fig. 14 is a schematic cross-sectional view of Form 9-2. FIGS. 15(A) to (F) are schematic step diagrams for explaining the first example of the manufacturing method of the sputtering target material-back plate assembly of the present embodiment. FIGS. 16(A) to (F) are schematic process diagrams for explaining the second example of the method for producing the sputtering target-back plate assembly of the present embodiment. FIGS. 17(A) to (F) are schematic process diagrams for explaining the third example of the manufacturing method of the sputtering target-back plate assembly of the present embodiment. FIGS. 18(A) to (E) are schematic step diagrams for explaining a fourth example of the method for producing the sputtering target-back plate assembly of the present embodiment. FIGS. 19(A) to (E) are schematic step diagrams for explaining the fifth example of the method for producing the sputtering target-back plate assembly of the present embodiment. FIGS. 20(A) to (F) are schematic step diagrams for explaining the sixth example of the manufacturing method of the sputtering target-back plate assembly of the present embodiment. FIGS. 21(A) to (F) are schematic step diagrams for explaining a seventh example of the method for producing the sputtering target-back plate assembly of the present embodiment. FIGS. 22(A) to (F) are schematic step diagrams for explaining the eighth example of the manufacturing method of the sputtering target-back plate assembly of the present embodiment. FIGS. 23(A) to (F) are schematic process diagrams for explaining the ninth example of the manufacturing method of the sputtering target-back plate assembly of the present embodiment. FIGS. 24(A) to (D) are schematic step diagrams for explaining a tenth example of the manufacturing method of the sputtering target-back plate assembly of the present embodiment. FIGS. 25(A) to (D) are schematic process diagrams for explaining the eleventh example of the manufacturing method of the sputtering target material-back plate assembly of the present embodiment. FIG. 26 is an image showing the abutting portion in Example 1. FIG. FIG. 27 is an image showing the bonding result in Comparative Example 1. FIG. FIG. 28 is an image showing the bonding result in Comparative Example 2. FIG. FIG. 29 is an image showing the bonding result in Comparative Example 3. FIG. FIG. 30 is an image showing the bonding result in Comparative Example 4. FIG.

1: Backplane

2: Sputtering target

3: The surface of the backplane

4: The back of the board of the backplane

5: The side of the back panel

6: Hook part

7: Target surface of sputtering target

8: The back of the target of the sputtering target

9: Outer peripheral side of sputtering target

10: Hook support part

13: The convex part on the surface of the back plate

100: Sputtering target-back plate joint

Claims (22)

A sputtering target-backplate joint, which is formed by joining a sputtering target to a backplate, characterized in that: The above-mentioned backplane has a board surface, a board back, and a board side, The above-mentioned sputtering target material has a target material surface, a target material back surface opposite to the above-mentioned plate surface, and an outer peripheral side surface, Either one of the back plate and the sputtering target further has a hook-shaped portion, and the other further has a hook-shaped portion, and the hook-shaped portion and the hook support portion are in contact with each other, The hook-shaped portion or the hook support portion of the sputtering target is provided on the outer peripheral side surface of the sputtering target, and The said sputtering target is fixed to the said backplate by making the said hook-shaped part contact|abut the said hook support part. The sputtering target-back plate joint according to claim 1, wherein the back plate has a convex portion on the plate surface, and the convex portion has the hook-shaped portion or the hook support portion. The sputtering target-backing plate joint according to claim 1, wherein the backing plate has a clip on the plate surface or the plate side surface, and the clip has the hook-shaped portion or the hook support portion. The sputtering target-back plate joint of claim 3, wherein the clip leaves a part of the side surface and enters the outer peripheral side surface, The clip is fixed on the backplane. The sputtering target-back plate joint of claim 3, wherein the side surface of the clip protrudes from the outer peripheral side surface, At least the protruding portion of the clip is fixed to the back plate. The sputtering target-back plate joint of claim 1, wherein the back plate has recesses on the surface of the plate, The back plate has a clip in the recess, The clip has the above-mentioned hook-shaped portion or the above-mentioned hook support portion, At least a part of the sputtering target and at least a part of the clip are embedded in the concave part, The clip is fixed to the recess of the back plate. The sputtering target-back plate joint of claim 1, wherein the back plate has recesses on the surface of the plate, The back plate has the hook-shaped portion or the hook support portion on the inner peripheral side surface of the concave portion, A part of the said sputtering target material is embedded in the said recessed part. The sputtering target-back plate joint according to any one of claims 1 to 7, wherein the hook-shaped portion has a first concave-convex portion, and the hook support portion has a second concave-convex portion corresponding to the first concave-convex portion shape department. The sputtering target material-backing plate joint according to any one of claims 1 to 7, wherein the hook-shaped portion has a hook shape whose front end of the hook in the direction from the backing plate to the sputtering surface becomes a maximum hooking position and the hook support portion has hook holes corresponding to the hook shape. The sputtering target material-back plate assembly according to any one of claims 1 to 9, wherein there is an intermediate layer of less than 2.5 mm at the interface between the above-mentioned sputtering target material and the above-mentioned back plate, and the intermediate layer comprises Ni, Cr , A sheet, powder, or a combination of the sheet and the powder containing at least any one of Al, Cu, or an alloy containing at least any one of Ni, Cr, Al, and Cu. The sputtering target-backplate assembly according to any one of claims 1 to 9, wherein an intermediate layer of 10 μm or less is provided at the interface between the sputtering target and the backplate, and the intermediate layer comprises Ni, Cr , Al, Cu at least any metal or a thin film containing at least any alloy of Ni, Cr, Al, Cu. The sputtering target-backplate assembly according to any one of claims 1 to 9, wherein there is an intermediate layer of 1.0 mm or less at the interface between the sputtering target and the backplate, and the intermediate layer includes In, Zn A sheet, powder, or a combination of at least one metal or an alloy containing at least any one of In, Zn, or a combination of the sheet and the powder. The sputtering target-backplate assembly according to any one of claims 1 to 9, wherein at the interface between the sputtering target and the backplate there are two or more intermediate layers, the intermediate layers comprising: Plates, powders, or the combination of the plates and the powders less than 2.5 mm, which contain at least any metal of Ni, Cr, Al, and Cu or an alloy containing at least any of Ni, Cr, Al, and Cu; A thin film with a thickness of 10 μm or less, which contains at least any metal of Ni, Cr, Al, and Cu or an alloy containing at least any of Ni, Cr, Al, and Cu; or Plates, powders, or combinations of the plates and the powders less than 1.0 mm, etc., contain at least any one of In, Zn, or an alloy containing at least any of In, Zn. The sputtering target-backplate assembly according to any one of claims 1 to 13, wherein the material of the sputtering target is Al-Sc alloy, Ru, Ru alloy, Ir or Ir alloy. The sputtering target-backplate assembly according to any one of claims 1 to 13, wherein the material of the sputtering target is Li-based oxide, Co-based oxide, Ti-based oxide or Mg-based oxide. The sputtering target-back plate joint according to any one of claims 1 to 15, wherein the material of the back plate is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the linear expansion coefficient of the back plate is 30.0×10 ^-6 /°C or less. A method for manufacturing a sputtering target-backplate joint, comprising: Step 1, which is to prepare a back plate having a plate surface, a plate back, a plate side, and any one of a hook portion or a hook support portion, as well as a target surface, a target back, an outer peripheral side, and the outer periphery. The sputtering target of the other of the above-mentioned hook-shaped portion on the side surface or the above-mentioned hook support portion; Step 2, which is to heat the above-mentioned back plate to thermally expand it; Step 3, which is to arrange the sputtering target and the back plate in such a manner that the surface of the plate and the back of the target are opposite, and the hook support portion and the hook-shaped portion are opposite to each other; and In step 4, the sputtering target is fixed to the backing plate by cooling the sputtering target and the backing plate so that the hook-shaped portion abuts on the hook support portion. The method for producing a sputtering target-backplate assembly according to claim 17, wherein after the above step 4, the backplate is pressed from the target surface of the sputtering target or the sputtering target and The steps of heating the backing plate and pressing the backing plate from the target surface of the sputtering target, and cooling the sputtering target and the backing plate are performed as one set once or repeated twice. times or more. A method for manufacturing a sputtering target-backplate joint, comprising: Step 1, which is to prepare a back plate having a plate surface, a plate back, and a plate side, a clip having any one of a hook portion or a hook support portion, and a target surface, a target back, a peripheral side, and the The sputtering target of the other of the above-mentioned hook-shaped portion or the above-mentioned hook support portion on the outer peripheral side surface; Step 2, disposing the sputtering target and the back plate in such a way that the surface of the plate is opposite to the back of the target; Step 3, which is to arrange the clip on the surface of the plate or the side surface of the plate, and arrange the sputtering target and the clip in such a way that the hook support part and the hook-shaped part are opposite to each other; and Step 4, which is to fix the clip on the backboard in the configuration state of the step 3. The manufacturing method of the sputtering target material-back plate joint body according to claim 19, wherein after the above step 4, pressing from the surface of the above-mentioned target material of the above-mentioned sputtering target material to the above-mentioned back plate or the above-mentioned sputtering target material and The steps of heating the backing plate and pressing the backing plate from the target surface of the sputtering target, and cooling the sputtering target and the backing plate are performed as one set once or repeated twice. times or more. A method for recovering a sputtering target, comprising: Step A, which is to heat the sputtering target-back plate assembly as claimed in any one of claims 1 to 16 to thermally expand it until the hook-shaped portion leaves the hook support portion; and In step B, the sputtering target is removed from the backplate, and the sputtering target is recovered from the sputtering target-backplate assembly. A method for recycling sputtering targets, characterized in that: The above-mentioned clip of the sputtering target material-back plate assembly of claim 3 is fixed to the above-mentioned back plate, and The recovery method includes the step C of removing the clip from the backplane, and recovering the sputtering target from the sputtering target-backplane assembly.

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