WO2022070881A1

WO2022070881A1 - Sputtering target-backing plate assembly, method for manufacturing the same, and sputtering target recovery method

Info

Publication number: WO2022070881A1
Application number: PCT/JP2021/033682
Authority: WO
Inventors: 智弘丸子; 雄鈴木; 将平大友; 紘暢中村
Original assignee: 株式会社フルヤ金属
Priority date: 2020-09-30
Filing date: 2021-09-14
Publication date: 2022-04-07
Also published as: TW202214893A

Abstract

The present disclosure provides a sputtering target-backing plate assembly that is configured: to suppress damage or peeling of a target even in a case where a target with low bending strength is used, or a case where the difference between the coefficients of linear expansion of the target and the backing plate differ significantly; to suppress contamination caused by volatilization of impurities; and to facilitate peeling/recovery of the target material while suppressing the loss of expensive materials used as the target material. The sputtering target-backing plate assembly according to the present disclosure comprises: a backing plate 1 that has a plate surface 3, a plate rear surface 4, a plate side surface 5, and a pressing surface 6; and a sputtering target 2 that has a target surface 7, a target rear surface 8 facing the plate surface 3, and a target side surface 9. The sputtering target 2 is fixed to the backing plate 1 by the target side surface 9 being pressed by the pressing surface 6.

Description

Sputtering target-backing plate joint, its manufacturing method and recovery method of sputtering target

The present disclosure relates to a suitable sputtering target-backing plate joint for installation in a sputtering apparatus used in a sputtering apparatus used in a manufacturing process of an HDD (hard disk drive), a semiconductor, etc., a method for manufacturing the same, and a method for recovering the sputtering target.

In order to install a sputtering target in a sputtering device used in a manufacturing process of HDDs, semiconductors, etc., a sputtering target-backing plate junction in which a sputtering target is bonded to a member called a backing plate is generally used. In the sputtering target-backing plate joint, by fixing the backing plate, the sputtering target is installed in the sputtering apparatus via the backing plate.

Since the backing plate is a member that supports the sputtering target and is a member that is responsible for cooling to suppress an increase in the temperature of the sputtering target due to exposure to plasma, heat of copper-based materials, aluminum-based materials, etc. It is made of a highly conductive material. In addition, the sputtering target and the backing plate must maintain close contact for heat conduction.

The bonding between the sputtering target and the backing plate is performed by using a bonding method generally called bonding, which uses a material having a low melting point and a low vapor pressure in vacuum such as indium or tin as an insert material, or a resin having conductivity. The method of joining is done.

However, if the temperature of the sputtering target rises above the melting point of indium or tin used as the insert material, indium or tin may volatilize and be mixed as impurities in the film formed, which is high. This is a fatal problem in applications where purity is required.

In order to solve the bonding problem, a technology that applies pressure facing the sputtering target and the backing plate without using a low melting point metal as an insert material and takes time to perform diffusion bonding while the temperature is high. (See, for example, Patent Documents 1 to 3).

In Patent Document 1, a material having a proof stress of 15 to ²⁰ kgf / mm ² , a proof stress of 15 to 20 kgf / mm, a proof stress of 15 to ²⁰ kgf / mm, and a proof stress of a backing plate equal to or higher than that of a sputtering target with respect to a sputtering target consisting of tantalum. It is disclosed that the direction of warpage of the sputtering target caused by thermal expansion and contraction is controlled by forming an assembly in which the sputtering target and the backing plate are diffusion-bonded.

In Patent Document 2, a target material having a melting point of 1000 ° C. or higher, one or more insert materials selected from a metal or alloy having a melting point lower than the melting point of the target material, and a backing plate are solid-phase diffusion bonded. It is disclosed that a high adhesion with a 100% bonding ratio and a high bonding strength can be obtained.

In Patent Document 3, after forming a sandwich structure in which the entire surface of the sputtering target is embedded, heat compression is applied to 400-600 ° C. by hot isostatic pressure compression (HIP) or uniaxial hot compression (UHP) for diffusion bonding. Then, a method of making an assembly by carving out a sputtering target and a backing plate is disclosed.

Japanese Unexamined Patent Publication No. 2015-183258 Japanese Unexamined Patent Publication No. 06-108246 Japanese Patent Publication No. 2014-511436

However, in the case of a sputtering target made of a material having a low bending strength as in the invention described in Patent Document 1, if the difference in linear expansion coefficient between the sputtering target and the backing plate is significantly different, diffusion bonding is performed at a high temperature. Sputtering targets can be damaged when cooled and thermally shrunk. Therefore, diffusion bonding may be performed at a low temperature, but diffusion bonding is not performed or sufficient strength cannot be obtained.

In addition, even if only diffusion bonding is performed between a sputtering target and a backing plate, which have significantly different differences in linear expansion coefficient, by heating and pressurizing, fatigue accumulates at the bonding interface when the temperature rises and falls repeatedly when the sputtering target is used. It may be destroyed and peeled off.

Further, in the invention described in Patent Document 2, when the temperature rises to the melting point of the insert material when the sputtering target is used, the insert material may be melted and the sputtering target may be peeled off. Such a tendency is likely to occur in semiconductor manufacturing where a large target is used and high purity is required.

In addition, there is a means to alleviate the stress such as inserting an insert material having a linear expansion coefficient near the middle between the sputtering target and the backing plate in order to alleviate the difference in the linear expansion coefficient. As with the case of joining using resin, the insert material volatilizes and the problem of contamination of impurities cannot be solved.

Further, in the invention described in Patent Document 3, since the sputtering target and the backing plate are performed until a strong diffusion bond is formed, the difference in linear expansion coefficient between the sputtering target and the backing plate is large, and the sputtering target has a large difference. Depending on the material, cracking of the sputtering target may occur in the diffusion bonding step of the sputtering target.

Therefore, it is an object of the present disclosure that damage or peeling of the sputtering target can be suppressed even when a sputtering target having a low bending strength is used or when the difference in linear expansion coefficient between the sputtering target and the backing plate is significantly different. In addition, a sputtering target-backing plate junction, which can suppress contamination due to volatilization of impurities and facilitate peeling and recovery of the target material while suppressing the loss of expensive materials used as the target material. It is to provide the manufacturing method and the recovery method of a sputtering target.

As a result of diligent studies, the present inventors have found that the above-mentioned problems can be solved by pressing and fixing the side surface of the target with the pressing surface of the backing plate, and have completed the present invention. That is, the sputtering target-backing plate joint according to the present invention is a sputtering target-backing plate joint in which a sputtering target is bonded to a backing plate, and the backing plate has a plate surface, a plate back surface, and a plate side surface. The sputtering target has a target surface, a target back surface facing the plate surface, and a target side surface, and the target side surface is pressed by the pressing surface. The sputtering target is fixed to the backing plate.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the pressing of the pressing surface is caused by the thermal shrinkage of the backing plate. In addition to improving the bonding strength by caulking between the side surface of the target and the pressing surface of the backing plate, it is possible to improve the bonding strength by caulking in the thickness direction of the sputtering target and the backing plate, and as a result, the sputtering target. It is possible to maintain the bonding strength at the time of use and maintain good heat conduction.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the backing plate has a recess on the plate surface, and the side surface of the recess is the pressing surface. In addition to improving the bonding strength by caulking between the side surface of the target and the pressing surface of the backing plate, it is possible to improve the bonding strength by caulking in the thickness direction of the sputtering target and the backing plate, and as a result, the sputtering target. It is possible to maintain the bonding strength at the time of use and maintain good heat conduction.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the backing plate has a convex portion on the plate surface, and the side surface of the convex portion is the pressing surface. In addition to improving the bonding strength by caulking between the side surface of the target and the pressing surface of the backing plate, it is possible to improve the bonding strength by caulking in the thickness direction of the sputtering target and the backing plate, and as a result, the sputtering target. It is possible to maintain the bonding strength at the time of use and maintain good heat conduction.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the backing plate has a fastener and the side surface of the fastener is the pressing surface. In addition to improving the bonding strength by caulking between the side surface of the target and the pressing surface of the fastener of the backing plate, it is possible to improve the bonding strength by caulking also in the thickness direction of the sputtering target and the backing plate. As a result, the bonding strength at the time of using the sputtering target can be maintained, and the heat conduction can be kept good.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the fastener is fixed to the plate surface or the plate side surface of the backing plate. If the fastener has a structure attached to the backing plate, the backing plate can be easily processed, and the fastener can have a complicated structure.

In the sputtering target-backing plate joint according to the present invention, the target side surface has an uneven portion, the pressing surface has an uneven portion, and the uneven portion of the target side surface and the uneven portion of the pressing surface are , It is preferable that the structure is such that they fit into each other. The movement of the sputtering target and the backing plate in the thickness direction can be controlled, and as a result, the bonding strength during use of the sputtering target can be maintained and the heat conduction can be kept good.

The sputtering target-backing plate junction according to the present invention has an intermediate layer of 2.5 mm or less at the interface between the sputtering target and the backing plate, and the intermediate layer is at least one of Ni, Cr, Al, and Cu. It is preferably composed of a plate or powder made of one kind of metal or an alloy containing at least one of Ni, Cr, Al and Cu, or a combination of the plate material and the powder. By providing the intermediate layer, the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. In addition, since the intermediate layer is provided at the interface between the sputtering target and the backing plate, the intermediate layer is covered with the sputtering target, so that the material of the intermediate layer is prevented from volatilizing and becoming impurities and adhering to the substrate. Can be done.

The sputtering target-backing plate junction according to the present invention has an intermediate layer of 10 μm or less at the interface between the sputtering target and the backing plate, and the intermediate layer is at least one of Ni, Cr, Al, and Cu. It is preferably a thin film made of a metal or an alloy containing at least one of Ni, Cr, Al and Cu. By providing the intermediate layer, the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. In addition, since the intermediate layer is provided at the interface between the sputtering target and the backing plate, the intermediate layer is covered with the sputtering target, so that the material of the intermediate layer is prevented from volatilizing and becoming impurities and adhering to the substrate. Can be done.

The sputtering target-backing plate alloy according to the present invention has an intermediate layer of 1.0 mm or less at the interface between the sputtering target and the backing plate, and the intermediate layer is a metal of at least one of In and Zn, or It is preferably composed of a plate material or powder made of an alloy containing at least one of In and Zn, or a combination of the plate material and the powder. By providing the intermediate layer, the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. In addition, since the intermediate layer is provided at the interface between the sputtering target and the backing plate, the intermediate layer is covered with the sputtering target, so that the material of the intermediate layer is prevented from volatilizing and becoming impurities and adhering to the substrate. Can be done.

The sputtering target-backing plate alloy according to the present invention has two or more intermediate layers at the interface between the sputtering target and the backing plate, and the intermediate layers are Ni, Cr, Al, Cu of 2.5 mm or less. A plate or powder composed of at least one of the metals or an alloy containing at least one of Ni, Cr, Al and Cu, or a combination of the plate and the powder, and at least 10 μm or less of Ni, Cr, Al and Cu. A thin film made of any one metal or an alloy containing at least one of Ni, Cr, Al, and Cu, or at least one of In and Zn of 1.0 mm or less, or at least one of In and Zn. It is preferably composed of a plate material or powder made of an alloy containing one kind, or a combination of the plate material and the powder. By providing two or more intermediate layers, the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. In addition, since the intermediate layer is provided at the interface between the sputtering target and the backing plate, the intermediate layer is covered with the sputtering target, so that the material of the intermediate layer is prevented from volatilizing and becoming impurities and adhering to the substrate. Can be done.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the material of the sputtering target is an Al—Sc alloy, Ru, Ru alloy, Ir or Ir alloy. Even with a high melting point material of 1000 ° C. or higher, the bonding strength between the sputtering target and the backing plate can be improved while suppressing warpage and cracking of the sputtering target.

In the sputtering target-backing plate joint according to the present invention, it is preferable that the material of the sputtering target is Li-based oxide, Co-based oxide, Ti-based oxide or Mg-based oxide. Even with a high melting point material of 1000 ° C. or higher, the bonding strength between the sputtering target and the backing plate can be improved while suppressing warpage and cracking of the sputtering target.

In the sputtering target-backing plate joint according to the present invention, the material of the backing plate is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the linear expansion coefficient of the backing plate is 30.0 × 10 ⁻ . It is preferably ⁶ / ° C. or lower. By using a backing plate with good thermal conductivity, the backing plate expands during heating, the sputtering target can be inserted into the pressing surface of the backing plate, and the backing plate contracts during cooling, resulting in backing. A joint can be formed by caulking the side surface of the target with the pressing surface of the plate.

The sputtering target-backing plate joint according to the present invention includes a form in which the bending strength of the sputtering target is 500 MPa or less. The junction of the sputtering target and the backing plate can also be applied to a sputtering target having a weak bending strength.

In the sputtering target-backing plate joint according to the present invention, the pressing surface of the backing plate has at least a pair of surfaces arranged at positions facing each other across the side surface of the target, and the paired backing plate. The relationship between the distance between the pressing surfaces of the target and the distance between the contact surfaces of the sputtering targets in contact with the pressing surface of the paired backing plate among the target side surfaces satisfies (Equation 1) to (Equation 5). Is preferable.
(Number 1) D _TG > D _BP
(Number 2) D _BP = D _TG -ΔD × C
(Equation 3) ΔD = D _BP × ΔT × CTE _BP −D _TG × ΔT × CTE _TG
(Number 4) D _TG -ΔD × 4.0 ≦ D _BP ≦ D _TG -ΔD × 0.5
(Number 5) CTE _BP > CTE _TG
However, D _BP , D _TG , ΔD, C, T, ΔT, CTE _BP and CTE _TG mean the following, respectively.
_DBP : Distance (mm) between the pressing surfaces of the paired backing plates at room temperature.
_DTG : Distance (mm) between the contact surfaces of the sputtering targets that come into contact with the pressing surfaces of the paired backing plates at room temperature.
T: Temperature (° C) at which the backing plate is thermally expanded to fit the sputtering target (where T> room temperature)
ΔT: T-room temperature (° C)
CTE _BP : Linear expansion coefficient (1 / ° C.) of the backing plate at temperature T
CTE _TG : Coefficient of linear expansion of sputtering target at temperature T (1 / ° C)
C: Coefficient (however, C = 0.5 to 4.0)
ΔD: Difference in thermal expansion amount between the backing plate and the sputtering target when the temperature is raised from room temperature to temperature T (mm)
When the sputtering target and the backing plate are joined by caulking the side surface of the target and the pressing surface of the backing plate, cracking or warpage of the sputtering target can be suppressed.

In the sputtering target-backing plate joint according to the present invention, the pressing surface of the backing plate has at least a pair of surfaces arranged at positions facing each other across the side surface of the target, and the paired backing plate. The relationship between the distance between the pressing surfaces of the target and the distance between the contact surfaces of the sputtering targets in contact with the pressing surface of the paired backing plate among the target side surfaces satisfies (Equation 6) to (Equation 10). Is preferable.
(Number 6) D _TG > D _BP
(Number 7) D _BP = D _TG -ΔD × C
(Equation 8) ΔD = D _BP × ΔT × CTE _BP −D _TG × ΔT ₁ × CT ₁ E _TG
(Equation 9) D _TG −ΔD × 4.0 ≦ D _BP ≦ D _TG −ΔD × 0.5
(Number 10) CTE _BP > CT ₁ _ETG
However, D _BP , D _TG , ΔD, C, T, ΔT, T ₁ , ΔT ₁ , CTE _BP and CT ₁ E _TG mean the following, respectively.
_DBP : Distance (mm) between the pressing surfaces of the paired backing plates at room temperature.
_DTG : Distance (mm) between the contact surfaces of the sputtering targets that come into contact with the pressing surfaces of the paired backing plates at room temperature.
T: The temperature (° C.) of the backing plate when the backing plate is thermally expanded to fit the sputtering target (where T> room temperature, T> T ₁ ).
ΔT: T-room temperature (° C)
T ₁ : Temperature (° C.) of the sputtering target when the backing plate is thermally expanded to fit the sputtering target (however, T ₁ ≧ room temperature, T> T ₁ )
ΔT ₁ : T ₁ -room temperature (° C)
CTE _BP : Linear expansion coefficient (1 / ° C.) of the backing plate at temperature T
CT ₁ _ETG : Linear expansion coefficient ( ₁ / ° C.) of the sputtering target at temperature T1.
C: Coefficient (however, C = 0.5 to 4.0)
ΔD: Difference in thermal expansion amount between the backing plate when the temperature is raised from room temperature to temperature T and the sputtering target when the temperature is raised from room temperature to temperature T ₁ (mm)
When the sputtering target and the backing plate are joined by caulking the side surface of the target and the pressing surface of the backing plate, cracking or warpage of the sputtering target can be suppressed.

In the sputtering target-backing plate joint according to the present invention, the sputtering target is fitted in the backing plate so that the plate surface of the backing plate is exposed on the entire circumference of the target surface of the sputtering target. Is preferable. Even after joining the sputtering target and the backing plate by caulking the side surface of the target and the pressing surface of the backing plate, the exposed portion of the plate surface can be used to easily install the sputtering target-backing plate joint in the sputtering apparatus. ..

In the sputtering target-backing plate joint according to the present invention, it is preferable that the target surface protrudes from the plate surface. When the sputtering target and the backing plate are joined by caulking the side surface of the target and the pressing surface of the backing plate, cracking or warpage of the sputtering target can be suppressed. Further, during manufacturing, only the sputtering target surface can be pressed for joining.

The method for manufacturing a sputtering target-backing plate joint according to the present invention includes a plate surface, a back surface of the plate, a backing plate having a plate side surface and a pressing surface, a target surface, and a target back surface facing the plate surface. The step 1 of preparing a sputtering target having a target side surface, a step 2 of heating and thermally expanding the backing plate, and the step 2 of heating the backing plate so that the target side surface and the pressing surface of the backing plate face each other. It is characterized by having a step 3 of arranging a sputtering target and the backing plate, and a step 4 of cooling the backing plate to form a caulking structure in which the side surface of the target is pressed by the pressing surface. .. A sputtering target-backing plate junction can be manufactured by caulking the side surface of the target with the pressing surface of the backing plate.

In the method for manufacturing a sputtering target-backing plate joint according to the present invention, a material to be an intermediate layer is used between the sputtering target and the backing plate between the

steps

1 and 2 or between the

steps

2 and 3. It is preferable to further have a step 5 of filling or coating the contact portion with. It is possible to manufacture a sputtering target-backing plate joint body capable of improving the bonding strength between the back surface of the target and the plate surface of the backing plate, improving the adhesion, and maintaining good heat conduction.

In the method for manufacturing a sputtering target-backing plate joint according to the present invention, the sputtering target is used to diffuse the back surface of the target of the sputtering target and the plate surface of the backing plate between the

steps

3 and 4. It is preferable to further have the step 6 of pressing. By diffusing the back surface of the target of the sputtering target and the plate surface of the backing plate, the back surface of the target of the sputtering target and the plate surface of the backing plate are joined over the entire surface, and the adhesion is improved and heat conduction is efficiently performed. can.

In the method for manufacturing a sputtering target-backing plate joint according to the present invention, at least in the step 2, the step 3 and the step 4, the hot press sintering method (HP) and the hot isotropic pressure sintering method (HIP) are used. ), The discharge plasma sintering method (SPS) and the heating method using a hot plate are preferably used. The sputtering target and the backing plate can be joined more reliably, the adhesion is improved, and heat conduction can be efficiently performed.

In the method for manufacturing a sputtering target-backing plate joint according to the present invention, in the step 6, the hot press sintering method (HP), the hot isotropic pressure sintering method (HIP), and the discharge plasma sintering method (SPS) are used. ) Is preferably used. By diffusing the back surface of the target of the sputtering target and the plate surface of the backing plate, the back surface of the target of the sputtering target and the plate surface of the backing plate are joined over the entire surface, and the adhesion is improved to efficiently conduct heat. Can be done.

In the method for manufacturing a sputtering target-backing plate joint according to the present invention, in the step 6, a reduced pressure atmosphere of 10 Pa or less or an atmosphere of an oxygen concentration of 1000 ppm or less is set, a heating temperature is 100 to 1000 ° C., and a pressing force is 0 Pa or more. The range is preferably 80 MPa or less. The oxygen content of the sputtering target can be suppressed.

In the method for manufacturing a sputtering target-backing plate joint according to the present invention, it is preferable that after the step 4, the pressing or heating and pressing steps and the cooling step are performed once as a set or repeated twice or more. While suppressing the warp of the sputtering target, the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate can be further improved, the adhesion can be improved, and heat conduction can be efficiently performed.

The method for recovering a sputtering target according to the present invention includes a step A in which the sputtering target-backing plate joint according to the present invention is heated and thermally expanded until the pressing surface is separated from the side surface of the target, and the sputtering target is placed on the backing plate. It is characterized by having a step B of recovering the sputtering target from the sputtering target-backing plate joint by removing from the sputtering target.

The present disclosure can suppress breakage and peeling of a sputtering target even when a sputtering target having a low bending strength is used or when the difference in linear expansion coefficient between the sputtering target and the backing plate is significantly different, and impurities are present. Sputtering target-backing plate junction, its manufacturing method and capable of suppressing the contamination due to volatilization of the target material and facilitating the peeling recovery of the target material while suppressing the loss of the expensive material used as the target material. A method for recovering a sputtering target can be provided.

It is a plan view of the disk-shaped sputtering target-backing plate joint body which concerns on this embodiment. It is sectional drawing of AA of 1st example. It is a plan view of the rectangular plate-shaped sputtering target-backing plate joint body which concerns on this embodiment. It is sectional drawing of AA of 2nd example. FIG. 3 is a schematic cross-sectional view taken along the line AA of the third example. FIG. 3 is a schematic cross-sectional view taken along the line AA of the fourth example. It is sectional drawing of AA of 5th example. In the fifth example, it is a partially enlarged view of the part surrounded by the broken line square, and is the first modification. In the fifth example, it is a partially enlarged view of the portion surrounded by the broken line square, and is the second modification. It is a partially enlarged view of the part surrounded by the square of the broken line in the 5th example, and is the modification example 3. In the fifth example, it is a partially enlarged view of the portion surrounded by the broken line square, and is the modified example 4. It is a partially enlarged view of the part surrounded by the square of the broken line in the 5th example, and is the modification 5. It is a partially enlarged view of the part surrounded by the square of the broken line in the 5th example, and is the modification 6. FIG. 5 is a partially enlarged view of a portion surrounded by a broken line square in the fifth example, and is a modified example 7. FIG. 5 is a partially enlarged view of a portion surrounded by a broken line square in the fifth example, and is a modified example 8. FIG. 5 is a partially enlarged view of a portion surrounded by a broken line square in the fifth example, and is a modified example 9. FIG. 5 is a partially enlarged view of a portion surrounded by a broken line square in the fifth example, and is a modified example 10. FIG. 5 is a partially enlarged view of a portion surrounded by a broken line square in the fifth example, and is a modified example 11. FIG. 5 is a partially enlarged view of a portion surrounded by a broken line square in the fifth example, and is a modified example 12. FIG. 5 is a partially enlarged view of a portion surrounded by a broken line square in the fifth example, and is a modified example 13. FIG. 5 is a partially enlarged view of a portion surrounded by a broken line square in the fifth example, and is a modified example 14. In the fifth example, it is a partially enlarged view of the portion surrounded by the broken line circle, and is the first modification. In the fifth example, it is a partially enlarged view of the portion surrounded by the broken line circle, and is the second modification. 6 is a schematic cross-sectional view taken along the line AA of the sixth example. It is sectional drawing of AA of 7th example. FIG. 3 is a schematic cross-sectional view taken along the line AA of the eighth example. It is sectional drawing of AA of 9th example. It is the first example for demonstrating the manufacturing process of the sputtering target-backing plate junction which concerns on this Embodiment based on FIG. It is a 2nd example for demonstrating the manufacturing process of the sputtering target-backing plate junction which concerns on this Embodiment based on FIG. It is the first example for demonstrating the manufacturing process of the sputtering target-backing plate junction which concerns on this Embodiment based on FIG. It is a 2nd example for demonstrating the manufacturing process of the sputtering target-backing plate junction which concerns on this Embodiment based on FIG. It is the first example for demonstrating the manufacturing process of the sputtering target-backing plate junction which concerns on this Embodiment based on FIG. It is a 2nd example for demonstrating the manufacturing process of the sputtering target-backing plate junction which concerns on this Embodiment based on FIG. It is the first example for demonstrating the manufacturing process of the sputtering target-backing plate junction which concerns on this Embodiment based on FIG. It is a 2nd example for demonstrating the manufacturing process of the sputtering target-backing plate junction which concerns on this Embodiment based on FIG. This is a first example for explaining the manufacturing process of the sputtering target-backing plate joint 301 according to the present embodiment. It is a second example for demonstrating the manufacturing process of the sputtering target-backing plate joint body 301 which concerns on this embodiment. This is a first example for explaining the manufacturing process of the sputtering target-backing plate joint 401 according to the present embodiment. It is a 2nd example for demonstrating the manufacturing process of the sputtering target-backing plate joint body 401 which concerns on this embodiment. It is an image which shows the caulking and the diffusion site in Example 1. FIG. It is a partially enlarged image of the notch portion of the sputtering target 2 in Example 2. It is the whole image of the sputtering target-backing plate joint body in Example 2. FIG. FIG. 3 is a partially enlarged image of a sputtering target-backing plate joint in Example 2. It is an image which shows the caulking and the diffusion site in Example 3. It is an image which shows the joining result in the comparative example 1. It is an image which shows the joining result in the comparative example 2. It is an image which shows the joining result in the comparative example 3. It is an image which shows the joining result in the comparative example 4.

Hereinafter, the present invention will be described in detail by showing embodiments, but the present invention is not construed as being limited to these descriptions. The embodiments may be modified in various ways as long as the effects of the present invention are exhibited. In the figure, in each of the joints, the parts having the same name are designated by the same reference numerals regardless of the shape.

<Sputtering target-backing plate joint>
(Form 1-1: The backing plate has a recess and a notch at the bottom of the side surface of the target)
The sputtering target-backing plate junction according to the present embodiment will be described with reference to FIGS. 1 and 2. The sputtering target-backing plate joint 100 according to the present embodiment is a sputtering target-backing plate joint in which the sputtering target 2 is bonded to the backing plate 1, and the backing plate 1 has a plate surface 3 and a plate back surface 4. The sputtering target 2 has a plate side surface 5 and a pressing surface 6, and the sputtering target 2 has a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface 9, and the target side surface 9 has a pressing surface 6. The sputtering target 2 is fixed to the backing plate 1 by being pressed by. In the sputtering target-backing plate joint 100 shown in FIG. 2, the lower portion of the target side surface 9 of the sputtering target 2 has a notch, and the target back surface 8 having a diameter smaller than that of the target surface 7 is formed. A recess 17 having a similar shape to the target back surface 8 of the sputtering target 2 is formed on the plate surface 3 of the above. As a method of removing the lower portion of the target side surface 9 of the sputtering target 2, for example, in the lower portion of the target side surface 9, a notch having a certain depth with the target side surface 9 as a reference surface is made over the entire circumference of the target side surface 9 or in the circumferential direction. It is provided in a part of. In the present embodiment, the side surface of the notch is also included in the target side surface 9, and is expressed as the lower part of the target side surface 9. When the sputtering target 2 is inserted into the recess 17 of the backing plate 1, the target back surface 8 of the sputtering target 2 is in contact with the plate surface 3 of the recess 17 of the backing plate 1, and the side surface 16 of the recess 17 is the pressing surface 6. Then, the lower portion of the target side surface 9 of the sputtering target 2 is pressed, and the sputtering target 2 is fixed to the backing plate 1.

In FIG. 1, the annularly shaded portion indicates the portion of the contact surface between the flat surface formed by the notch provided at the lower part of the target side surface 9 and the plate surface 3, and the contact surface is annular. There is. However, if the sputtering target 2 can be suppressed from being damaged or peeled off, and contamination due to volatilization of impurities can be suppressed, the contact surface may be discontinuous.

The recess 17 provided in the backing plate 1 may be provided with a pressing surface 6 on the entire circumference of the side surface 16 of the recess 17 of the backing plate 1 to press the lower portion of the target side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1 when 2 is used, a pressing surface 6 is partially provided on the side surface 16 of the recess 17 of the backing plate 1 and the lower portion of the target side surface 9 of the sputtering target 2 is pressed. May be good.

1 and 2 show a form in which a disk-shaped sputtering target 2 is joined to a disk-shaped backing plate 1. However, as shown in FIG. 3, a rectangular sputtering target 2 is attached to a rectangular backing plate 1. May be in the form of being joined. The BB cross section has the same shape as the AA cross section shown in FIG. Further, the rectangular shape includes a square shape. Also in FIG. 3, the annularly shaded portion indicates the portion of the contact surface between the flat surface formed by the notch provided in the lower part of the target side surface 9 and the plate surface 3.

(Form 1-2: The backing plate has a recess and there is no notch at the bottom of the side surface of the target)
In the sputtering target-backing plate joint 200 according to the present embodiment shown in FIG. 4, the shape of the target back surface 8 of the sputtering target 2 is left as it is without providing a notch, and the sputtering target is formed on the plate surface 3 of the backing plate 1. When a recess 17 having a similar shape to the target back surface 8 of 2 is formed and the sputtering target 2 is inserted into the recess 17 of the backing plate 1, the target back surface 8 of the sputtering target 2 is the plate of the recess 17 of the backing plate 1. The side surface 16 of the recess 17 becomes a pressing surface 6 and can press the target side surface 9 of the sputtering target 2 because it is in contact with the surface 3.

The recess 17 provided in the backing plate 1 may be provided with a pressing surface 6 on the entire circumference of the side surface 16 of the recess 17 of the backing plate 1 to press the target side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1 during use, the target side surface 9 of the sputtering target 2 may be pressed by partially providing the pressing surface 6 on the side surface 16 of the recess 17 of the backing plate 1.

(Form 2-1: The backing plate has a convex portion and a notch at the lower part of the side surface of the target)
In the sputtering target-backing plate joint 300 according to the present embodiment shown in FIG. 5, the lower portion of the target side surface 9 of the sputtering target 2 has a notch, and the target back surface 8 having a diameter smaller than that of the target surface 7 is formed. A convex portion 13 having an inner contour similar to the contour of the target back surface 8 of the sputtering target 2 is formed on the plate surface 3 of the backing plate 1. When the sputtering target 2 is inserted into the inner region of the convex portion 13 of the backing plate 1, the target back surface 8 of the sputtering target 2 is in contact with the plate surface 3 of the inner region of the convex portion 13 of the backing plate 1. The inner side surface of the convex portion 13 becomes a pressing surface 6, and the lower portion of the target side surface 9 of the sputtering target 2 can be pressed.

At this time, as a method of forming the convex portion 13, (1) a method of cutting the plate surface 3 of the backing plate 1 to form the convex portion 13 (shown in FIG. 5), and (2) separately from the backing plate 1. A method of preparing a fastener, appropriately processing the inner contour of the fastener so as to have a shape similar to the contour of the target side surface of the sputtering target 2, and then screwing the fastener, diffusion joining, welding, or the like. There is a method (shown in FIG. 20) of forming the convex portion 13 by joining to the plate surface 3 of the backing plate 1 using the above.

The convex portion 13 provided on the backing plate 1 is provided with a convex portion on the entire circumference with respect to the target side surface 9 of the sputtering target 2, and is a pressing surface 6 inside the convex portion of the backing plate 1 and is a lower portion of the target side surface 9 of the sputtering target 2. If the sputtering target 2 does not peel off from the backing plate 1 when the sputtering target 2 is used, the backing plate 1 may be provided with a partially convex portion 13 with respect to the target side surface 9 of the sputtering target 2. The lower portion of the target side surface 9 of the sputtering target 2 may be pressed by the pressing surface 6 inside the convex portion.

(Form 2-2: The backing plate has a convex portion and there is no notch at the lower part of the side surface of the target)
In the sputtering target-backing plate joint 400 according to the present embodiment shown in FIG. 6, the shape of the back surface 8 of the target is left as it is without providing a notch at the lower portion of the target side surface 9 of the sputtering target 2, and the backing plate 1 is used. When a convex portion 13 having an inner contour similar to the contour of the target back surface 8 of the sputtering target 2 is formed on the plate surface 3 and the sputtering target 2 is inserted into the inner region of the convex portion 13 of the backing plate 1, sputtering is performed. The target back surface 8 of the target 2 is in contact with the plate surface 3 in the inner region of the convex portion 13 of the backing plate 1, and the inner side surface of the convex portion 13 becomes the pressing surface 6 to be the target side surface 9 of the sputtering target 2. Can also be pressed.

The convex portion 13 provided on the backing plate 1 is provided with a convex portion on the entire circumference with respect to the target side surface 9 of the sputtering target 2, and the target side surface 9 of the sputtering target 2 is pressed by the pressing surface 6 inside the convex portion of the backing plate 1. However, if the sputtering target 2 does not peel off from the backing plate 1 when the sputtering target 2 is used, a convex portion 13 is partially provided with respect to the target side surface 9 of the sputtering target 2 and the convex portion of the backing plate 1 is provided. The target side surface 9 of the sputtering target 2 may be pressed by the inner pressing surface 6.

In the present embodiment, for example, in the embodiments shown in FIGS. 1 to 6, when the target side surface 9 of the sputtering target 2 is pressed by the pressing surface 6 of the backing plate 1, the heat shrinkage of the backing plate is used for pressing. Is preferable. At room temperature, the target back surface 8 of the sputtering target 2 is processed in advance so as to be larger than the inside of the pressing surface 6 of the backing plate 1. When the back surface 8 of the target of the sputtering target 2 is inserted inside the pressing surface 6 of the backing plate 1, the backing plate 1 is heated and thermally expanded so that the inside of the pressing surface 6 of the backing plate 1 is the target of the sputtering target 2. Make it larger than the back surface 8. After that, the target back surface 8 of the sputtering target 2 is inserted inside the pressing surface 6 of the backing plate 1, and the target back surface 8 of the sputtering target 2 and the inside of the plate surface 3 or the convex portion 13 inside the concave portion 17 of the backing plate 1 are inserted. After the backing plate 1 is brought into contact with the plate surface 3 of the backing plate 1, the inside of the pressing surface 6 of the backing plate 1 is made smaller, so that the target side surface 9 of the sputtering target 2 is formed by the pressing surface 6 of the backing plate 1. Can be pressed. In order to press the target side surface 9 of the sputtering target 2 with the pressing surface 6 of the backing plate 1, in the sputtering target-backing plate joint according to the present embodiment, the target back surface 8 of the sputtering target 2 is the concave opening surface of the backing plate 1. Alternatively, it is preferably larger than the opening surface inside the convex portion.

(Form 3: The backing plate has a convex portion, the pressing surface of the convex portion has an uneven portion, the removal portion (small diameter portion) is provided at the lower portion of the side surface of the target, and the side surface of the removal portion has the uneven portion. )
As shown in FIG. 7, in the sputtering target-backing plate joint 500 according to the present embodiment, the target side surface 9 of the sputtering target 2 has an uneven portion 18, and the pressing surface 6 of the backing plate 1 has an uneven portion 19. Moreover, it is preferable that the uneven portion 18 of the target side surface 9 and the uneven portion 19 of the pressing surface 6 of the backing plate 1 have a structure of being fitted to each other. As shown in FIG. 7, when the sputtering target 2 has a notch on the target side surface 9, it is preferable that the uneven portion 18 of the target side surface 9 is provided with the uneven portion 18 in the notch. In addition to improving the bonding strength by pressing the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the backing plate 1, the bonding strength by pressing is also improved in the thickness direction of the sputtering target 2 and the backing plate 1. be able to. As a result, the bonding strength at the time of using the sputtering target 2 can be maintained, and the heat conduction can be kept good. Further, if the bonding strength due to the pressing in the side surface direction and the thickness direction of the target side surface 9 of the sputtering target 2 and the side surface direction and the thickness direction of the pressing surface 6 of the backing plate 1 is sufficient, the bonding strength with the target back surface 8 of the sputtering target 2 is sufficient. Since the bonding strength with the plate surface 3 inside the convex portion 13 of the backing plate 1 can be intentionally weakened, the sputtering target 2 can be easily peeled off and recovered from the backing plate 1 after the sputtering target 2 is used. be able to. Regarding the uneven portion 18 of the target side surface 9 of the sputtering target 2 and the uneven portion 19 of the pressing surface 6 of the backing plate 1 in FIG. 7, the form of the unevenness shown in FIGS. 7A to 7N is used. It may be brought into contact. Further, the outer side surface of the convex portion 13 and the target side surface 9 of the sputtering target 2 form a continuous side surface having no step as shown in FIGS. 7 and 7 (A) to 7 (N), for example. It is preferable, but there may be a step as shown in FIG. 7 (O) or FIG. 7 (P). FIG. 7 (O) shows a form in which the target side surface 9 projects outward from the outer side surface of the convex portion 13. FIG. 7 (P) shows a form in which the outer side surface of the convex portion 13 projects outward from the target side surface 9.

(Form 4-1: Form having an intermediate layer)
As shown in FIG. 8, in the sputtering target-backing plate junction 600 according to the present embodiment, the intermediate layer 10 having a thickness of 2.5 mm or less is provided at the interface between the sputtering target 2 and the backing plate 1, and the intermediate layer 10 is Ni. , Cr, Al, Cu, at least one metal or an alloy containing at least one of Ni, Cr, Al, Cu. It is preferable that the plate material, powder, or a combination of the plate material and the powder is used. By relaxing the difference in linear expansion coefficient between the sputtering target 2 and the backing plate 1 by the intermediate layer 10, it is possible to further suppress damage and warpage of the sputtering target 2 due to repeated expansion due to heating and contraction due to cooling. Further, by providing the intermediate layer 10, the bonding strength between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the recess 17 of the backing plate can be improved, and the adhesion can be improved to maintain good heat conduction. .. Further, since the intermediate layer 10 is provided at the interface between the sputtering target 2 and the backing plate 1, the intermediate layer 10 is covered with the sputtering target 2, so that the material of the intermediate layer 10 volatilizes and adheres to the substrate as impurities. Can be suppressed. The reason for selecting the elements of Ni, Cr, Al, and Cu for the intermediate layer 10 is that they are suitable from the viewpoints of adhesion, heat conduction, and coefficient of linear expansion. When the intermediate layer 10 is a plate material, if the plate material is thicker than 2.5 mm, the recess of the backing plate 1 must be provided deeper, so that the thickness of the backing plate 1 may need to be increased. When the intermediate layer 10 is a powder layer, there are a form in which it is in a powder state by heating, a form in which the powder is sintered, and a form in which the powder is melted by heating. The form in which the powder is melted by heating is similar to the form in which the intermediate layer 10 is a plate material. The intermediate layer 10 is preferably provided between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the recess 17 of the backing plate 1, but in addition to this, the target side surface 9 of the sputtering target 2 and the backing plate 1 are further provided. It may be provided at the interface with the inner portion where the pressing surface 6 is provided.

(Form 4-2: Form having an intermediate layer)
In the sputtering target-backing plate joint 600 shown in FIG. 8, it has been described that the recess 17 is provided on the plate surface 3 of the backing plate 1 and the intermediate layer 10 is provided on the plate surface 3 of the recess 17, which is shown in FIG. Similarly, the intermediate layer 10 can be provided even when the pressing surface 6 of the convex portion 13 is formed on the plate surface 3 of the backing plate 1 as in the sputtering target-backing plate joint 700.

(Form 4-3: Form having an intermediate layer)
Similar to the embodiment shown in FIG. 8, the sputtering target-backing plate junction 600 according to the present embodiment has an intermediate layer 10 of 10 μm or less at the interface between the sputtering target 2 and the backing plate 1, and the intermediate layer 10 has an intermediate layer 10 of 10 μm or less. It is preferable that the thin film is made of a metal containing at least one of Ni, Cr, Al and Cu or an alloy containing at least one of Ni, Cr, Al and Cu. By relaxing the difference in linear expansion coefficient between the sputtering target 2 and the backing plate 1 by the intermediate layer 10, it is possible to further suppress damage and warpage of the sputtering target 2 due to repeated expansion due to heating and contraction due to cooling. Even if the film thickness of the intermediate layer 10 is thicker than 10 μm, it only takes time to form the intermediate layer 10, and the effect as the intermediate layer 10 is not so different from that of 10 μm or less. Further, by providing the intermediate layer 10, the bonding strength between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the recess 17 of the backing plate 1 can be improved, and the adhesion can be improved to maintain good heat conduction. can. Further, since the intermediate layer 10 is provided at the interface between the sputtering target 2 and the backing plate 1, the intermediate layer 10 is covered with the sputtering target 2, so that the material of the intermediate layer 10 volatilizes and adheres to the substrate as impurities. Can be suppressed. The reason for selecting the elements of Ni, Cr, Al, and Cu for the intermediate layer 10 is that they are suitable from the viewpoints of adhesion, heat conduction, and coefficient of linear expansion. The thin film is preferably a thin film produced by sputtering, and is preferably formed on the plate surface 3 of the recess 17 of the backing plate 1. Further, a foil having a thickness of 10 μm or less may be used. The intermediate layer 10 is preferably provided between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the recess 17 of the backing plate 1, but in addition to this, the target side surface 9 of the sputtering target 2 and the backing plate 1 are further provided. It may be provided at the interface with the inner portion where the pressing surface 6 is provided.

(Form 4-4: Form having an intermediate layer)
In the sputtering target-backing plate joint 600 shown in FIG. 8, it has been described that the recess 17 is provided on the plate surface 3 of the backing plate 1 and the intermediate layer 10 is provided on the plate surface 3 of the recess 17, which is shown in FIG. Similarly, the intermediate layer 10 can be provided even when the pressing surface 6 of the convex portion 13 is formed on the plate surface 3 of the backing plate 1 as in the sputtering target-backing plate joint 700.

(Form 4-5: Form having an intermediate layer)
Similar to the embodiment shown in FIG. 8, the sputtering target-backing plate junction 600 according to the present embodiment has an intermediate layer 10 of 1.0 mm or less at the interface between the sputtering target 2 and the backing plate 1, and the intermediate layer 10 is provided. Is preferably a plate or powder made of an alloy containing at least one of In and Zn or an alloy containing at least one of In and Zn, or a combination of the plate and the powder. By relaxing the difference in linear expansion coefficient between the sputtering target 2 and the backing plate 1 by the intermediate layer 10, it is possible to further suppress damage and warpage of the sputtering target 2 due to repeated expansion due to heating and contraction due to cooling. Further, by providing the intermediate layer 10, the bonding strength between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the recess 17 of the backing plate 1 can be improved, and the adhesion can be improved to maintain good heat conduction. can. Further, since the intermediate layer 10 is provided at the interface between the sputtering target 2 and the backing plate 1, the intermediate layer 10 is covered with the sputtering target 2, so that the material of the intermediate layer 10 volatilizes and adheres to the substrate as impurities. Can be suppressed. The reason for selecting the In and Zn elements for the intermediate layer 10 is that they are suitable from the viewpoints of adhesion, heat conduction and linear expansion coefficient. When the intermediate layer 10 is a plate material, if the plate material is thicker than 1.0 mm, the recess of the backing plate 1 must be provided deeper, so that the thickness of the backing plate 1 may need to be increased. When the intermediate layer 10 is a powder layer, there are a form in which it is in a powder state by heating, a form in which the powder is sintered, and a form in which the powder is melted by heating. The form in which the powder is melted by heating is similar to the form in which the intermediate layer 10 is a plate material. The intermediate layer 10 is preferably provided between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1, but in addition to this, the target side surface 9 of the sputtering target 2 and the pressing surface of the backing plate 1 are further provided. It may be provided at the interface with the inner portion where 6 is provided.

(Form 4-6: Form having an intermediate layer)
In the sputtering target-backing plate joint 600 shown in FIG. 8, it has been described that the recess 17 is provided on the plate surface 3 of the backing plate 1 and the intermediate layer 10 is provided on the plate surface 3 of the recess 17, which is shown in FIG. Similarly, the intermediate layer 10 can be provided even when the pressing surface 6 of the convex portion 13 is formed on the plate surface 3 of the backing plate 1 as in the sputtering target-backing plate joint 700.

(Form 4-7: Form having an intermediate layer)
As shown in FIG. 10, the sputtering target-backing plate alloy 800 according to the present embodiment has two intermediate layers 10 at the interface between the sputtering target 2 and the backing plate 1, and the intermediate layer 10a is 2.5 mm. A plate or powder made of at least one of the following Ni, Cr, Al, and Cu metals or an alloy containing at least one of Ni, Cr, Al, and Cu, or a combination of the plate and the powder, 10 μm or less. A thin film made of at least one metal of Ni, Cr, Al, or Cu or an alloy containing at least one of Ni, Cr, Al, or Cu, or at least one of In and Zn of 1.0 mm or less. The intermediate layer 10b is made of any of a plate material, a powder, or a combination of the plate material and the powder, which is made of a metal or an alloy containing at least one of In and Zn, and the intermediate layer 10b is Ni, Cr, Al, Cu of 2.5 mm or less. A plate or powder composed of at least one of the metals or an alloy containing at least one of Ni, Cr, Al, and Cu, or a combination of the plate and the powder, and at least 10 μm or less of Ni, Cr, Al, and Cu. A thin film made of any one metal or an alloy containing at least one of Ni, Cr, Al, and Cu, or at least one of In and Zn of 1.0 mm or less, or at least one of In and Zn. It is preferably composed of a plate or powder made of an alloy containing one kind, or a combination of the plate material and the powder. By relaxing the difference in linear expansion coefficient between the sputtering target 2 and the backing plate 1 by the intermediate layer 10, it is possible to further suppress damage and warpage of the sputtering target 2 due to repeated expansion due to heating and contraction due to cooling. The intermediate layer 10a installed at the interface with the backing plate 1 is a metal containing at least one of Ni, Cr, Al, and Cu, or an alloy containing at least one of Ni, Cr, Al, and Cu, and at least In and Zn. The reason for forming with various forms of materials made of any one kind of metal or an alloy containing at least one kind of In and Zn is that it is suitable from the viewpoint of adhesion, thermal conductivity and linear expansion coefficient. Further, the intermediate layer 10b installed at the interface with the sputtering target 2 is a metal containing at least one of Ni, Cr, Al and Cu, or an alloy containing at least one of Ni, Cr, Al and Cu, In and Zn. The reason for forming with various forms of materials made of at least one of the above metals or alloys containing at least one of In and Zn is suitable from the viewpoint of adhesion, thermal conductivity and linear expansion coefficient. Although the intermediate layer is shown in the form of two layers in FIG. 10, the intermediate layer may be in the form of three or more layers as long as the effect of the intermediate layer described above is obtained.

(Form 4-8: Form having an intermediate layer)
In the sputtering target-backing plate joint 800 shown in FIG. 10, it has been described that the recess 17 is provided on the plate surface 3 of the backing plate 1 and the

intermediate layers

10a and 10b are provided on the plate surface 3 of the recess 17. Even when the pressing surface 6 of the convex portion 13 is formed on the plate surface 3 of the backing plate 1 as in the sputtering target-backing plate joint 900 shown in the above, the

intermediate layers

10a and 10b can be similarly provided.

(Material of sputtering target)
In the sputtering target-backing plate joint according to the present embodiment, the material of the sputtering target 2 may be an Al—Sc alloy, Ru, Ru alloy, Ir or Ir alloy. Further, Li-based oxides, Co-based oxides, Ti-based oxides, Mg-based oxides and the like can also be used. Even with a high melting point material of 1000 ° C. or higher, the bonding strength between the sputtering target and the backing plate can be improved while suppressing warpage and cracking of the sputtering target.

In the sputtering target-backing plate joint according to the present embodiment, the material of the backing plate 1 is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the linear expansion coefficient is 30.0 × 10 ^-6 / ° C. The following is preferable. The linear expansion coefficient is preferably 28.5 × 10 ^-6 / ° C or less, and more preferably 27.3 × 10 ^-6 / ° C or less. If the coefficient of linear expansion is larger than 30.0 × 10 ^-6 / ° C, the coefficient of linear expansion is caused by repeated expansion and contraction of the backing plate 1 due to heating and cooling, resulting in cracking and warping of the sputtering target. Is preferably 30.0 × 10 ^-6 / ° C. or lower. Further, by using a backing plate having good thermal conductivity, the backing plate expands during heating, the sputtering target can be inserted into the pressing surface of the backing plate, and the backing plate contracts during cooling. The joint can be formed by caulking the target side surface 9 with the pressing surface of the backing plate. The lower limit of the coefficient of linear expansion is preferably 6.0 × 10 ^-6 / ° C. or higher.

[Bending strength of sputtering target]
The sputtering target-backing plate joint according to the present embodiment can also be applied to a sputtering target 2 having a bending strength of 500 MPa or less. This embodiment can also be applied to a sputtering target having a weak bending strength. The bending strength is measured, for example, based on the JIS R 1601: 2008 standard.

[Relational expression including linear expansion coefficient] (ΔT is common)
In the sputtering target-backing plate joint according to the present embodiment, the pressing surface 6 of the backing plate 1 has at least a pair of surfaces arranged at positions facing each other with the target side surface 9 interposed therebetween, and becomes the pair. The relationship between the distance between the pressing surfaces of the backing plates and the distance between the contact surfaces of the sputtering targets 2 that are in contact with the pressing surfaces of the paired backing plates among the target side surfaces is (Equation 1) to (Equation 5). ) Satisfying.
(Number 1) D _TG > D _BP
(Number 2) D _BP = D _TG -ΔD × C
(Equation 3) ΔD = D _BP × ΔT × CTE _BP −D _TG × ΔT × CTE _TG
(Number 4) D _TG -ΔD × 4.0 ≦ D _BP ≦ D _TG -ΔD × 0.5
(Number 5) CTE _BP > CTE _TG
However, D _BP , D _TG , ΔD, C, T, ΔT, CTE _BP and CTE _TG mean the following, respectively.
_DBP : Distance (mm) between the pressing surfaces of the paired backing plates at room temperature.
_DTG : Distance (mm) between the contact surfaces of the sputtering targets that come into contact with the pressing surfaces of the paired backing plates at room temperature.
T: Temperature (° C) at which the backing plate is thermally expanded to fit the sputtering target (where T> room temperature)
ΔT: T-room temperature (° C)
CTE _BP : Linear expansion coefficient (1 / ° C.) of the backing plate at temperature T
CTE _TG : Coefficient of linear expansion of sputtering target at temperature T (1 / ° C)
C: Coefficient (however, C = 0.5 to 4.0)
ΔD: Difference in thermal expansion amount between the backing plate and the sputtering target when the temperature is raised from room temperature to temperature T (mm)
Here, when the shape of the plane of the backing plate 1 is rectangular, the long side of the sputtering target 2 and the long side of the backing plate 1 are made to correspond, and the short side of the sputtering target 2 and the short side of the backing plate 1 are made to correspond. .. As shown in (Equation 1), at room temperature, the distance between the contact surfaces of the sputtering targets 2 is larger than the distance between the pressing surfaces of the backing plate 1, and the sputtering target 2 is placed inside the pressing surface 6 of the backing plate 1. Cannot be put in. Here, the room temperature is 25 ° C. Here, as the form of (1), consider a form in which both the backing plate 1 and the sputtering target 2 are heated to the temperature T. When the backing plate 1 is heated from room temperature to the temperature T at which the backing plate is thermally expanded, the distance between the pressing surfaces of the backing plate 1 is thermally expanded to the length obtained by ( _{DBP × ΔT × CTE BP} ₎ . .. Further, when the temperature of the sputtering target 2 is raised from room temperature to the temperature T, the distance between the contact surfaces of the sputtering target 2 undergoes thermal expansion of the length obtained by (D _TG × ΔT × CTE _TG ). Therefore, when the relationship (Equation 5) with respect to the linear expansion coefficient is established, when both the backing plate 1 and the sputtering target 2 are heated to the temperature T, the pressing surface 6 of the backing plate 1 is increased by the length of ΔD. It expands more thermally than the contact surface of the sputtering target 2. If the distance between the pressing surfaces of the backing plate 1 is the same as or larger than the distance between the contact surfaces of the sputtering target 2 due to this thermal expansion, the sputtering target 2 can be fitted inside the pressing surface 6 of the backing plate 1. Will be. Then, when the temperature is lowered to room temperature, the contact surface of the sputtering target 2 is pressed by the pressing surface 6 of the backing plate 1 according to the relationship shown in (Equation 1). In the above-described embodiment (1), in order to enable the contact surface of the sputtering target 2 to be pressed by the pressing surface 6 of the backing plate 1, the distance between the pressing surfaces of the backing plate 1 is due to the thermal expansion of the backing plate 1. Must reverse the distance between the contact surfaces of the sputtering target 2. Therefore, the relationship between the distance between the pressing surfaces of the backing plate 1 at room temperature and the distance between the contact surfaces of the sputtering targets 2 at room temperature can be set as small as possible (Equation 2). ) And (Equation 4). In (Equation 2) and (Equation 4), C is a coefficient, but when C is in the range of 0.5 to 4.0, the contact surface of the sputtering target 2 is pressed by the pressing surface 6 of the backing plate 1. When joining the sputtering target and the backing plate, it is possible to suppress cracking and warpage of the sputtering target.

In this embodiment, not only (1) both the backing plate 1 and the sputtering target 2 described above are heated to the temperature T, but also (2) the backing plate 1 is heated to the temperature T and the sputtering target 2 is heated. Includes a form in which the temperature is raised only to a temperature T ₁ lower than the temperature T, and (3) a form in which the backing plate 1 is raised to a temperature T and the sputtering target 2 is not raised.

[Relational expression including linear expansion coefficient] (Different between ΔT (BP) and ΔT ₁ (TG))
In the sputtering target-backing plate joint according to the present embodiment, the pressing surface 6 of the backing plate 1 has at least a pair of surfaces arranged at positions facing each other with the target side surface 9 interposed therebetween, and becomes the pair. The relationship between the distance between the pressing surfaces of the backing plates and the distance between the contact surfaces of the sputtering targets 2 that are in contact with the pressing surfaces of the paired backing plates among the target side surfaces is (Equation 6) to (Equation 10). ) Satisfying.
(Number 6) D _TG > D _BP
(Number 7) D _BP = D _TG -ΔD × C
(Equation 8) ΔD = D _BP × ΔT × CTE _BP −D _TG × ΔT ₁ × CT ₁ E _TG
(Equation 9) D _TG −ΔD × 4.0 ≦ D _BP ≦ D _TG −ΔD × 0.5
(Number 10) CTE _BP > CT ₁ _ETG
However, D _BP , D _TG , ΔD, C, T, ΔT, T ₁ , ΔT ₁ , CTE _BP and CT ₁ E _TG mean the following, respectively.
_DBP : Distance (mm) between the pressing surfaces of the paired backing plates at room temperature.
_DTG : Distance (mm) between the contact surfaces of the sputtering targets that come into contact with the pressing surfaces of the paired backing plates at room temperature.
T: The temperature (° C.) of the backing plate when the backing plate is thermally expanded to fit the sputtering target (where T> room temperature, T> T ₁ ).
ΔT: T-room temperature (° C)
T ₁ : Temperature (° C.) of the sputtering target when the backing plate is thermally expanded to fit the sputtering target (however, T ₁ ≧ room temperature, T> T ₁ )
ΔT ₁ : T ₁ -room temperature (° C)
CTE _BP : Linear expansion coefficient (1 / ° C.) of the backing plate at temperature T
CT ₁ _ETG : Linear expansion coefficient ( ₁ / ° C.) of the sputtering target at temperature T1.
C: Coefficient (however, C = 0.5 to 4.0)
ΔD: Difference in thermal expansion amount between the backing plate when the temperature is raised from room temperature to temperature T and the sputtering target when the temperature is raised from room temperature to temperature T ₁ (mm)
Here, when the form (3) is similarly examined, when the backing plate 1 is heated from room temperature to the temperature T at which the backing plate is thermally expanded, the distance between the pressing surfaces of the backing plate 1 is ( _DBP ×). It undergoes thermal expansion of the length obtained by ΔT × CTE _BP ). Further, since the sputtering target 2 remains at room temperature, the distance between the contact surfaces of the sputtering targets 2 does not thermally expand. Then, when only the backing plate 1 is thermally expanded by raising the temperature to the temperature T, the distance between the pressing surfaces of the backing plate 1 is thermally expanded by the length obtained by ( _{DBP × ΔT × CTE BP} ₎ , and the backing is performed. Since the distance between the pressing surfaces of the plate 1 is larger than the distance between the contact surfaces of the sputtering target 2, the sputtering target 2 can be fitted inside the pressing surface 6 of the backing plate 1. Then, when the temperature is lowered to room temperature, the contact surface of the sputtering target 2 is pressed by the pressing surface 6 of the backing plate 1 according to the relationship shown in (Equation 6). In the embodiment (3) above, in order to enable the contact surface of the sputtering target 2 to be pressed by the pressing surface 6 of the backing plate 1, the distance between the pressing surfaces of the backing plate 1 is due to the thermal expansion of the backing plate 1. Must reverse the distance between the contact surfaces of the sputtering target 2. Therefore, the relationship between the distance between the pressing surfaces of the backing plate 1 at room temperature and the distance between the contact surfaces of the sputtering targets 2 at room temperature can be set as small as possible (Equation 7). ) And (Equation 9). In (Equation 7) and (Equation 9), C is a coefficient, but when C is in the range of 0.5 to 4.0, the contact surface of the sputtering target 2 is pressed by the pressing surface 6 of the backing plate 1. When joining the sputtering target and the backing plate, it is possible to suppress cracking and warpage of the sputtering target.

Since the form (2) is an intermediate form between the form (1) and the form (3), the contact surface of the sputtering target 2 is similarly pressed by the pressing surface 6 of the backing plate 1.

In the sputtering target-backing plate junction according to the present embodiment, the sputtering target 2 is placed on the entire circumference of the target surface of the sputtering target so that the sputtering target-backing plate junction can be easily installed in the sputtering apparatus. It includes a form in which the backing plate 1 is fitted into the backing plate so that the plate surface of the backing plate 1 is exposed. This form is illustrated, for example, in FIG. 1 or FIG.

In the sputtering target-backing plate joint according to the present embodiment, the target surface of the sputtering target is the target surface of the sputtering target so that only the sputtering target surface can be pressed and joined when the sputtering target-backing plate joint is manufactured. It includes a form that protrudes from the plate surface of the backing plate. This form is illustrated, for example, in FIGS. 12 to 23.

<Manufacturing method of sputtering target-backing plate joint>
[First example of manufacturing method]
(Step 1)
Next, with reference to FIG. 12, a first example of the method for manufacturing the sputtering target-backing plate junction 100 shown in FIG. 2 will be described. First, as shown in FIG. 12A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having 9 and 2 is prepared. Here, as shown in FIG. 12B, the recess 17 is formed on the plate surface 3 of the backing plate 1. The recess 17 has a bottom surface 15 and a side surface 16, the bottom surface 15 of the recess 17 is a plate surface 3 for contacting the target back surface 8 of the sputtering target 2, and the side surface 16 of the recess 17 is the target side surface 9 of the sputtering target 2. It becomes a pressing surface 6 for pressing the lower part. Further, at the lower part of the sputtering target 2, the target side surface 9 of the portion to be filled in the recess 17 of the backing plate 1 is removed to form a notch. The size of the lower part of the target side surface 9 at the removed portion of the sputtering target 2, that is, the size of the target back surface 8, is provided to be slightly larger than the distance between the pressing surfaces 6 of the backing plate 1. As a result, even if the lower portion including the notch of the sputtering target 2 is to be fitted into the recess 17, it cannot be fitted.

(Step 2)
Next, as shown in FIG. 12C, the backing plate 1 is heated and thermally expanded. At this time, at first, the distance between the pressing surfaces 6 of the recesses 17 of the backing plate 1 is set to be slightly smaller than the size of the lower part of the target side surface 9 of the sputtering target 2. The backing plate 1 expands. When the backing plate 1 is further heated and expanded, the distance between the pressing surfaces 6 of the backing plate 1 becomes slightly larger than the size of the lower portion of the target side surface 9 of the sputtering target 2.

(Step 3)
In step 2, when the distance between the pressing surfaces 6 of the backing plate 1 becomes slightly larger than the size of the lower portion of the target side surface 9 of the sputtering target 2 due to heating, the sputtering target 2 is placed on the backing plate as shown in FIG. 12 (D). The recess 17 of 1 can be filled. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the lower portion of the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 12E, the backing plate 1 is cooled to form a caulking structure in which the lower portion of the target side surface 9 is pressed by the pressing surface 6. The backing plate 1 contracts due to the cooling in the step 4, the lower portion of the target side surface 9 of the sputtering target 2 is pressed by the pressing surface 6 of the backing plate 1, and the backing plate 1 can be joined by caulking due to the shrinkage during cooling. In step 2, the backing plate 1 is heated, but the sputtering target 2 is not heated together. It is possible that the sputtering target 2 will heat up due to heat conduction from the backing plate 1. Then, in step 4, it is possible that the temperature of the sputtering target 2 drops as the backing plate 1 is cooled. The backing plate 1 is heated, for example, by using a hot plate.

[Second example of manufacturing method]
(Step 1)
Next, with reference to FIG. 13, a second example of the method for manufacturing the sputtering target-backing plate junction 100 shown in FIG. 2 will be described. This is a method of heating both the backing plate 1 and the sputtering target 2. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or the like. First, as shown in FIG. 13A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having 9 and 2 is prepared. Here, as shown in FIG. 13B, the recess 17 is formed on the plate surface 3 of the backing plate 1. The recess 17 has a bottom surface 15 and a side surface 16, the bottom surface 15 of the recess 17 is a plate surface 3 for contacting the target back surface 8 of the sputtering target 2, and the side surface 16 of the recess 17 is the target side surface 9 of the sputtering target 2. It becomes a pressing surface 6 for pressing the lower part. Further, at the lower part of the sputtering target 2, the target side surface 9 of the portion to be filled in the recess 17 of the backing plate 1 is removed to form a notch. The size of the lower part of the target side surface 9 at the removed portion of the sputtering target 2, that is, the size of the target back surface 8, is provided to be slightly larger than the distance between the pressing surfaces 6 of the backing plate 1. As a result, even if the lower portion including the notch of the sputtering target 2 is to be fitted into the recess 17, it cannot be fitted.

Next, as shown in FIG. 13C, the target back surface 8 of the sputtering target 2 is installed on the recess 17 of the plate surface 3 of the backing plate 1. At this time, since the size of the lower part of the target side surface 9 of the sputtering target 2 is slightly larger than the distance between the pressing surfaces 6 of the backing plate 1, the lower part of the target side surface 9 of the sputtering target 2 is the backing plate 1. The recess 17 is not filled.

(Step 2)
Next, as shown in FIG. 13 (D), the backing plate 1 and the sputtering target 2 are heated. At this time, at first, the distance between the pressing surfaces 6 of the recesses 17 of the backing plate 1 is slightly smaller than the size of the lower part of the target side surface 9 of the sputtering target 2, but the backing plate 1 and the sputtering target 2 are heated. As a result, the backing plate 1 expands more than the sputtering target 2. Further, when the backing plate 1 and the sputtering target 2 are heated and expanded, the distance between the pressing surfaces 6 of the backing plate 1 becomes slightly larger than the size of the lower part of the target side surface 9 of the sputtering target 2.

(Step 3)
Through step 2, as shown in FIG. 13 (E), the sputtering target 2 can be filled in the recess 17 of the backing plate 1. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the lower portion of the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 13 (F), the sputtering target 2 and the backing plate 1 are cooled to form a caulking structure in which the lower portion of the target side surface 9 is pressed by the pressing surface 6. The cooling of the step 4 causes the backing plate 1 to shrink more during cooling than the sputtering target 2, and the lower portion of the target side surface 9 of the sputtering target 2 is tightened by the pressing surface 6 of the backing plate 1 and caulked by the shrinkage during cooling. Can be joined.

[Third example of manufacturing method]
(Step 1)
Next, with reference to FIG. 14, a first example of the method for manufacturing the sputtering target-backing plate junction 200 shown in FIG. 4 will be described. First, as shown in FIG. 14A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having 9 and 2 is prepared. Here, as shown in FIG. 14B, the recess 17 is formed on the plate surface 3 of the backing plate 1. The recess 17 has a bottom surface 15 and a side surface 16, the bottom surface 15 of the recess 17 is a plate surface 3 for abutting the target back surface 8 of the sputtering target 2, and the side surface 16 of the recess 17 has a target side surface 9 of the sputtering target 2. It becomes a pressing surface 6 for pressing. At this time, the distance between the pressing surfaces 6 of the recesses 17 of the backing plate 1 is set to be slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2. As a result, even if the sputtering target 2 is to be fitted into the recess 17, it cannot be fitted.

(Step 2)
Next, as shown in FIG. 14C, the backing plate 1 is heated and thermally expanded. At this time, at first, the distance between the pressing surfaces 6 of the recesses 17 of the backing plate 1 is set to be slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2, but when the backing plate 1 is heated, the backing is performed. The plate 1 expands. When the backing plate 1 is further heated and expanded, the distance between the pressing surfaces 6 of the backing plate 1 becomes slightly larger than the distance between the target side surfaces 9 of the sputtering target 2.

(Step 3)
In step 2, when the distance between the pressing surfaces 6 of the backing plate 1 becomes slightly larger than the distance between the target side surfaces 9 of the sputtering target 2 due to heating, the sputtering target 2 is placed on the backing plate 1 as shown in FIG. 14 (D). Can be filled in the recess 17 of. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 14 (E), the backing plate 1 is cooled to form a caulking structure in which the target side surface 9 is pressed by the pressing surface 6. The backing plate 1 contracts due to the cooling in the step 4, the target side surface 9 of the sputtering target 2 is pressed by the pressing surface 6 of the backing plate 1, and the backing plate 1 can be joined by caulking due to the shrinkage during cooling. In step 2, the backing plate 1 is heated, but the sputtering target 2 is not heated together. It is possible that the sputtering target 2 will heat up due to heat conduction from the backing plate 1. Then, in step 4, it is possible that the temperature of the sputtering target 2 drops as the backing plate 1 is cooled. The backing plate 1 is heated, for example, by using a hot plate.

[Fourth example of manufacturing method]
(Step 1)
Next, a second example of the method for manufacturing the sputtering target-backing plate junction 200 shown in FIG. 4 will be described with reference to FIG. This is a method of heating both the backing plate 1 and the sputtering target 2. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or the like. First, as shown in FIG. 15A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having 9 and 2 is prepared. Here, as shown in FIG. 15B, a recess 17 is formed on the plate surface 3 of the backing plate 1. The recess 17 has a bottom surface 15 and a side surface 16, the bottom surface 15 of the recess 17 is a plate surface 3 for abutting the target back surface 8 of the sputtering target 2, and the side surface 16 of the recess 17 has a target side surface 9 of the sputtering target 2. It becomes a pressing surface 6 for pressing. At this time, the distance between the pressing surfaces 6 of the recesses 17 of the backing plate 1 is set to be slightly smaller than the size of the distance between the target side surfaces 9 of the sputtering target 2.

Next, as shown in FIG. 15C, the target back surface 8 of the sputtering target 2 is installed on the recess 17 of the plate surface 3 of the backing plate 1. At this time, since the distance between the target side surfaces 9 of the sputtering target 2 is slightly larger than the distance between the pressing surfaces 6 of the recesses 17 of the backing plate 1, the target side surface 9 of the sputtering target 2 is the backing plate 1. The recess 17 is not filled.

(Step 2)
Next, as shown in FIG. 15 (D), the backing plate 1 and the sputtering target 2 are heated. At this time, at first, the distance between the pressing surfaces 6 of the recesses 17 of the backing plate 1 is slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2, but the backing plate 1 and the sputtering target 2 are heated. As a result, the backing plate 1 expands more than the sputtering target 2. Further, when the backing plate 1 and the sputtering target 2 are heated and expanded, the distance between the pressing surfaces 6 of the recesses 17 of the backing plate 1 becomes slightly larger than the distance between the target side surfaces 9 of the sputtering target 2.

(Step 3)
Through step 2, as shown in FIG. 15 (E), the sputtering target 2 can be filled in the recess 17 of the backing plate 1. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 15 (F), the sputtering target 2 and the backing plate 1 are cooled to form a caulking structure in which the target side surface 9 is pressed by the pressing surface 6. The cooling of the step 4 causes the backing plate 1 to shrink more during cooling than the sputtering target 2, the target side surface 9 of the sputtering target 2 is tightened by the pressing surface 6 of the recess 17 of the backing plate 1, and the backing plate 1 is crimped due to the shrinkage during cooling. Can be joined by.

[Fifth example of manufacturing method]
(Step 1)
Next, with reference to FIG. 16, a first example of the method for manufacturing the sputtering target-backing plate junction 300 shown in FIG. 5 will be described. First, as shown in FIG. 16A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having 9 and 2 is prepared. Here, as shown in FIG. 16B, the convex portion 13 is formed on the plate surface 3 of the backing plate 1. Further, at the lower part of the sputtering target 2, the target side surface 9 of the portion to be filled between the pressing surfaces 6 of the convex portion 13 of the backing plate 1 is removed to form a notch. The size of the lower part of the target side surface 9 at the removed portion of the sputtering target 2, that is, the size of the target back surface 8, is provided to be slightly larger than the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1. Here, a portion other than the convex portion 13 that abuts on the back surface 8 of the target is also a plate surface 3, and the side surface of the convex portion 13 is a pressing surface 6 for pressing the lower portion of the target side surface 9 of the sputtering target 2.

(Step 2)
Next, as shown in FIG. 16C, the backing plate 1 is heated and thermally expanded. At this time, at first, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 is set to be slightly smaller than the size of the lower portion of the target side surface 9 of the sputtering target 2, but when the backing plate 1 is heated, , The backing plate 1 expands. Then, when the backing plate 1 is further heated and expanded, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 becomes slightly larger than the size of the lower portion of the target side surface 9 of the sputtering target 2.

(Step 3)
In step 2, when the distance between the pressing surfaces 6 of the backing plate 1 becomes slightly larger than the size of the lower portion of the target side surface 9 of the sputtering target 2 due to heating, the sputtering target 2 is placed on the backing plate as shown in FIG. 16 (D). It can be filled between the pressing surfaces 6 of the convex portion 13 of 1. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the lower portion of the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the convex portion 13 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 16E, the backing plate 1 is cooled to form a caulking structure in which the lower portion of the target side surface 9 is pressed by the pressing surface 6. The backing plate 1 contracts due to the cooling in the step 4, and the lower portion of the target side surface 9 of the sputtering target 2 is pressed by the pressing surface 6 of the convex portion 13 of the backing plate 1, and can be joined by caulking due to the shrinkage during cooling. In step 2, the backing plate 1 is heated, but the sputtering target 2 is not heated together. It is possible that the sputtering target 2 will heat up due to heat conduction from the backing plate 1. Then, in step 4, it is possible that the temperature of the sputtering target 2 drops as the backing plate 1 is cooled. The backing plate 1 is heated, for example, by using a hot plate.

[6th example of manufacturing method]
(Step 1)
Next, with reference to FIG. 17, a second example of the method for manufacturing the sputtering target-backing plate junction 300 shown in FIG. 5 will be described. This is a method of heating both the backing plate 1 and the sputtering target 2. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or the like. First, as shown in FIG. 17A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having 9 and 2 is prepared. Here, as shown in FIG. 17B, the convex portion 13 is formed on the plate surface 3 of the backing plate 1. Further, at the lower part of the sputtering target 2, the target side surface 9 of the portion to be filled between the pressing surfaces 6 of the convex portion 13 of the backing plate 1 is removed to form a notch. The size of the lower part of the target side surface 9 at the removed portion of the sputtering target 2, that is, the size of the target back surface 8, is provided to be slightly larger than the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1. Here, a portion other than the convex portion 13 that abuts on the back surface 8 of the target is also a plate surface 3, and the side surface of the convex portion 13 is a pressing surface 6 for pressing the lower portion of the target side surface 9 of the sputtering target 2.

Next, as shown in FIG. 17C, the target back surface 8 of the sputtering target 2 is installed on the convex portion 13 of the plate surface 3 of the backing plate 1. At this time, since the size of the lower portion of the target side surface 9 of the sputtering target 2 is slightly larger than the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1, the lower portion of the target side surface 9 of the sputtering target 2 is provided. , It is not filled between the pressing surfaces 6 of the convex portions 13 of the backing plate 1.

(Step 2)
Next, as shown in FIG. 17D, the backing plate 1 and the sputtering target 2 are heated. At this time, at first, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 is set to be slightly smaller than the size of the lower part of the target side surface 9 of the sputtering target 2, but the backing plate 1 and the sputtering target 2 are heated. As a result, the backing plate 1 expands more than the sputtering target 2. Further, when the backing plate 1 and the sputtering target 2 are heated and expanded, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 becomes slightly larger than the size of the lower portion of the target side surface 9 of the sputtering target 2. ..

(Step 3)
Through step 2, as shown in FIG. 17 (E), the sputtering target 2 can be filled between the pressing surfaces 6 of the convex portions 13 of the backing plate 1. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the lower portion of the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the convex portion 13 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 17F, the sputtering target 2 and the backing plate 1 are cooled to form a caulking structure in which the lower portion of the target side surface 9 is pressed by the pressing surface 6. Due to the cooling in step 4, the backing plate 1 shrinks more during cooling than the sputtering target 2, and the lower portion of the target side surface 9 of the sputtering target 2 is tightened by the pressing surface 6 of the convex portion 13 of the backing plate 1 during cooling. It can be joined by caulking due to shrinkage.

[7th example of manufacturing method]
(Step 1)
Next, with reference to FIG. 18, a first example of the method for manufacturing the sputtering target-backing plate junction 400 shown in FIG. 6 will be described. First, as shown in FIG. 18A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having 9 and 2 is prepared. Here, as shown in FIG. 18B, the convex portion 13 is formed on the plate surface 3 of the backing plate 1. Further, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 is set to be slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2. Here, a portion other than the convex portion 13 that comes into contact with the target back surface 8 is also a plate surface 3, and the side surface of the convex portion 13 is a pressing surface 6 for pressing the target side surface 9 of the sputtering target 2.

(Step 2)
Next, as shown in FIG. 18C, the backing plate 1 is heated and thermally expanded. At this time, at first, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 is set to be slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2, but when the backing plate 1 is heated, The backing plate 1 expands. Further, when the backing plate 1 is further heated and expanded, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 becomes slightly larger than the distance between the target side surfaces 9 of the sputtering target 2.

(Step 3)
In step 2, when the distance between the pressing surfaces 6 of the backing plate 1 becomes slightly larger than the distance between the target side surfaces 9 of the sputtering target 2 due to heating, the sputtering target 2 is placed on the backing plate 1 as shown in FIG. 18 (D). It can be filled between the pressing surfaces 6 of the convex portion 13 of the above. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 18E, the backing plate 1 is cooled to form a caulking structure in which the target side surface 9 is pressed by the pressing surface 6. The backing plate 1 contracts due to the cooling in the step 4, the target side surface 9 of the sputtering target 2 is pressed by the pressing surface 6 of the convex portion 13 of the backing plate 1, and the backing plate 1 can be joined by caulking due to the shrinkage during cooling. In step 2, the backing plate 1 is heated, but the sputtering target 2 is not heated together. It is possible that the sputtering target 2 will heat up due to heat conduction from the backing plate 1. Then, in step 4, it is possible that the temperature of the sputtering target 2 drops as the backing plate 1 is cooled. The backing plate 1 is heated, for example, by using a hot plate.

[8th example of manufacturing method]
(Step 1)
Next, with reference to FIG. 19, a second example of the method for manufacturing the sputtering target-backing plate junction 400 shown in FIG. 6 will be described. This is a method of heating both the backing plate 1 and the sputtering target 2. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or the like. First, as shown in FIG. 19A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having 9 and 2 is prepared. Here, as shown in FIG. 19B, the convex portion 13 is formed on the plate surface 3 of the backing plate 1. Further, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 is set to be slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2. Here, a portion other than the convex portion 13 that comes into contact with the target back surface 8 is also a plate surface 3, and the side surface of the convex portion 13 is a pressing surface 6 for pressing the target side surface 9 of the sputtering target 2.

Next, as shown in FIG. 19C, the target back surface 8 of the sputtering target 2 is installed on the convex portion 13 of the plate surface 3 of the backing plate 1. At this time, since the distance between the target side surfaces 9 of the sputtering target 2 is slightly larger than the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1, the target side surface 9 of the sputtering target 2 is the backing plate 1. It is not filled between the pressing surfaces 6 of the convex portion 13.

(Step 2)
Next, as shown in FIG. 19D, the backing plate 1 and the sputtering target 2 are heated. At this time, at first, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 is slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2, but the backing plate 1 and the sputtering target 2 are heated. As a result, the backing plate 1 expands more than the sputtering target 2. Further, when the backing plate 1 and the sputtering target 2 are heated and expanded, the distance between the pressing surfaces 6 of the convex portions 13 of the backing plate 1 becomes slightly larger than the distance between the target side surfaces 9 of the sputtering target 2.

(Step 3)
Through step 2, as shown in FIG. 19E, the sputtering target 2 can be filled between the pressing surfaces 6 of the convex portions 13 of the backing plate 1. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the convex portion 13 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 19F, the sputtering target 2 and the backing plate 1 are cooled to form a caulking structure in which the target side surface 9 is pressed by the pressing surface 6. Due to the cooling in step 4, the backing plate 1 shrinks more during cooling than the sputtering target 2, and the target side surface 9 of the sputtering target 2 is tightened by the pressing surface 6 of the convex portion 13 of the backing plate 1, due to the shrinkage during cooling. It can be joined by caulking.

[9th example of manufacturing method]
(Step 1)
Next, with reference to FIG. 20, a first example of a method for manufacturing the sputtering target-backing plate junction 301 will be described. The sputtering target-backing plate joint 301 is formed by cutting out the convex portion 13 of the sputtering target-backing plate joint 300 from the backing plate 1, while backing the fastener 11 having the same role as the convex portion 13. The difference is that it is fixed to the plate 1. First, as shown in FIG. 20A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having a 9 and a fastener 11 are prepared. Next, as shown in FIG. 20B, the fastener 11 is fixed to the plate surface 3 of the backing plate 1. Further, at the lower part of the sputtering target 2, the target side surface 9 of the portion to be filled between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 is removed to form a notch. The size of the lower part of the target side surface 9 at the removed portion of the sputtering target 2, that is, the size of the target back surface 8, is provided to be slightly larger than the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1. Here, a portion other than the fastener 11 that abuts on the back surface 8 of the target is also a plate surface 3, and the side surface of the fastener 11 is a pressing surface 6 for pressing the lower portion of the target side surface 9 of the sputtering target 2. Further, as a means for fixing the fastener 11 to the plate surface 3 of the backing plate 1, a screwing or joining method can be exemplified. As a joining method, a method such as diffusion joining or welding can be further exemplified.

(Step 2)
Next, as shown in FIG. 20 (C), the backing plate 1 is heated and thermally expanded. At this time, at first, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 is set to be slightly smaller than the size of the lower part of the target side surface 9 of the sputtering target 2, but when the backing plate 1 is heated, , The backing plate 1 expands. Further, when the backing plate 1 is further heated and expanded, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 becomes slightly larger than the size of the lower portion of the target side surface 9 of the sputtering target 2.

(Step 3)
Through step 2, as shown in FIG. 20 (D), the sputtering target 2 can be filled between the pressing surfaces 6 of the fasteners 11 of the backing plate 1. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the lower portion of the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the fastener 11 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 20 (E), the backing plate 1 is cooled to form a caulking structure in which the lower portion of the target side surface 9 is pressed by the pressing surface 6. The backing plate 1 contracts due to the cooling in the step 4, the lower portion of the target side surface 9 of the sputtering target 2 is pressed by the pressing surface 6 of the fastener 11 of the backing plate 1, and the backing plate 1 can be joined by caulking due to the contraction during cooling. In step 2, the backing plate 1 is heated, but the sputtering target 2 is not heated together. It is possible that the sputtering target 2 will heat up due to heat conduction from the backing plate 1. Then, in step 4, it is possible that the temperature of the sputtering target 2 drops as the backing plate 1 is cooled. The backing plate 1 is heated, for example, by using a hot plate.

[10th example of manufacturing method]
(Step 1)
Next, a second example of a method for manufacturing the sputtering target-backing plate junction 301 will be described with reference to FIG. 21. This is a method of heating both the backing plate 1 and the sputtering target 2. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or the like. First, as shown in FIG. 21 (A), a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having a 9 and a fastener 11 are prepared. Next, as shown in FIG. 21B, the fastener 11 is fixed to the plate surface 3 of the backing plate 1. Further, at the lower part of the sputtering target 2, the target side surface 9 of the portion to be filled between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 is removed to form a notch. The size of the lower part of the target side surface 9 at the removed portion of the sputtering target 2, that is, the size of the target back surface 8, is provided to be slightly larger than the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1. Here, a portion other than the fastener 11 that abuts on the back surface 8 of the target is also a plate surface 3, and the side surface of the fastener 11 is a pressing surface 6 for pressing the lower portion of the target side surface 9 of the sputtering target 2. Further, as a means for fixing the fastener 11 to the plate surface 3 of the backing plate 1, a screwing or joining method can be exemplified. Further examples of the joining method include diffusion joining or welding.

Next, as shown in FIG. 21 (C), the target back surface 8 of the sputtering target 2 is installed on the fastener 11 on the plate surface 3 of the backing plate 1. At this time, since the size of the lower portion of the target side surface 9 of the sputtering target 2 is slightly larger than the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1, the lower portion of the target side surface 9 of the sputtering target 2 is provided. , It is not filled between the pressing surfaces 6 of the fasteners 11 of the backing plate 1.

(Step 2)
Next, as shown in FIG. 21 (D), the backing plate 1 and the sputtering target 2 are heated and thermally expanded. At this time, at first, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 is slightly smaller than the size of the lower part of the target side surface 9 of the sputtering target 2, but the backing plate 1 and the sputtering target 2 are heated. As a result, the backing plate 1 expands more than the sputtering target 2. Further, when the backing plate 1 and the sputtering target 2 are heated and expanded, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 becomes slightly larger than the size of the lower part of the target side surface 9 of the sputtering target 2.

(Step 3)
Through step 2, as shown in FIG. 21 (E), the sputtering target 2 can be filled between the pressing surfaces 6 of the fasteners 11 of the backing plate 1. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the lower portion of the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the fastener 11 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 21F, the sputtering target 2 and the backing plate 1 are cooled to form a caulking structure in which the lower portion of the target side surface 9 is pressed by the pressing surface 6. Due to the cooling in step 4, the backing plate 1 shrinks more during cooling than the sputtering target 2, and the lower portion of the target side surface 9 of the sputtering target 2 is tightened by the pressing surface 6 of the fastener 11 of the backing plate 1 during cooling. It can be joined by caulking due to shrinkage.

[11th example of manufacturing method]
(Step 1)
Next, with reference to FIG. 22, a first example of a method for manufacturing the sputtering target-backing plate junction 401 will be described. The sputtering target-backing plate joint 401 is formed by cutting out the convex portion 13 of the sputtering target-backing plate joint 400 from the backing plate 1, while backing the fastener 11 having the same role as the convex portion 13. The difference is that it is fixed to the plate 1. First, as shown in FIG. 22 (A), a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having a 9 and a fastener 11 are prepared. Next, as shown in FIG. 22B, the fastener 11 is fixed to the plate surface 3 of the backing plate 1. At this time, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 is set to be slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2. Here, a portion other than the fastener 11 that comes into contact with the target back surface 8 is also a plate surface 3, and the side surface of the fastener 11 is a pressing surface 6 for pressing the target side surface 9 of the sputtering target 2. Further, as a means for fixing the fastener 11 to the plate surface 3 of the backing plate 1, a screwing or joining method can be exemplified. Further examples of the joining method include diffusion joining or welding.

(Step 2)
Next, as shown in FIG. 22C, the backing plate 1 is heated and thermally expanded. At this time, at first, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 is set to be slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2, but when the backing plate 1 is heated, The backing plate 1 expands. Further, when the backing plate 1 is further heated and expanded, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 becomes slightly larger than the distance between the target side surfaces 9 of the sputtering target 2.

(Step 3)
Through step 2, as shown in FIG. 22D, the sputtering target 2 can be filled between the pressing surfaces 6 of the fasteners 11 of the backing plate 1. As a result, the sputtering target 2 and the backing plate 1 can be arranged so that the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the fastener 11 of the backing plate 1 face each other.

(Step 4)
Next, as shown in FIG. 22 (E), the backing plate 1 is cooled to form a caulking structure in which the target side surface 9 is pressed by the pressing surface 6. The backing plate 1 contracts due to the cooling in the step 4, the target side surface 9 of the sputtering target 2 is pressed by the pressing surface 6 of the fastener 11 of the backing plate 1, and the backing plate 1 can be joined by caulking due to the contraction during cooling. In step 2, the backing plate 1 is heated, but the sputtering target 2 is not heated together. It is possible that the sputtering target 2 will heat up due to heat conduction from the backing plate 1. Then, in step 4, it is possible that the temperature of the sputtering target 2 drops as the backing plate 1 is cooled. The backing plate 1 is heated, for example, by using a hot plate.

[12th example of manufacturing method]
(Step 1)
Next, a second example of a method for manufacturing the sputtering target-backing plate junction 401 will be described with reference to FIG. 23. This is a method of heating both the backing plate 1 and the sputtering target 2. The heating can be performed by, for example, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS), or the like. First, as shown in FIG. 23A, a backing plate 1 having a plate surface 3, a plate back surface 4, a plate side surface 5, a target surface 7, a target back surface 8 facing the plate surface 3, and a target side surface. A sputtering target 2 having a 9 and a fastener 11 are prepared. Next, as shown in FIG. 23B, the fastener 11 is fixed to the plate surface 3 of the backing plate 1. At this time, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 is set to be slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2. Here, a portion other than the fastener 11 that comes into contact with the target back surface 8 is also a plate surface 3, and the side surface of the fastener 11 is a pressing surface 6 for pressing the target side surface 9 of the sputtering target 2. Further, as a means for fixing the fastener 11 to the plate surface 3 of the backing plate 1, a screwing or joining method can be exemplified. Further examples of the joining method include diffusion joining or welding.

Next, as shown in FIG. 23 (C), the target back surface 8 of the sputtering target 2 is installed on the fastener 11 on the plate surface 3 of the backing plate 1. At this time, since the distance between the target side surfaces 9 of the sputtering target 2 is slightly larger than the distance between the pressing surfaces 6 of the fastener 11 of the backing plate 1, the target side surface 9 of the sputtering target 2 is the backing plate 1. The fastener 11 is not filled between the pressing surfaces 6 of the fastener 11.

(Step 2)
Next, as shown in FIG. 23 (D), the backing plate 1 and the sputtering target 2 are heated and thermally expanded. At this time, at first, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 is slightly smaller than the distance between the target side surfaces 9 of the sputtering target 2, but the backing plate 1 and the sputtering target 2 are heated. As a result, the backing plate 1 expands more than the sputtering target 2. Further, when the backing plate 1 and the sputtering target 2 are heated and expanded, the distance between the pressing surfaces 6 of the fasteners 11 of the backing plate 1 becomes slightly larger than the distance between the target side surfaces 9 of the sputtering target 2.

(Step 3)
Through step 2, as shown in FIG. 23 (E), the sputtering target 2 can be filled between the pressing surfaces 6 of the fasteners 11 of the backing plate 1, and the target side surface 9 of the sputtering target 2 and the backing plate 1 can be filled. The sputtering target 2 and the backing plate 1 can be arranged so as to face the pressing surface 6 of the fastener 11.

(Step 4)
Next, as shown in FIG. 23 (F), the sputtering target 2 and the backing plate 1 are cooled to form a caulking structure in which the target side surface 9 is pressed by the pressing surface 6. Due to the cooling in step 4, the backing plate 1 shrinks more during cooling than the sputtering target 2, and the target side surface 9 of the sputtering target 2 is tightened by the pressing surface 6 of the fastener 11 of the backing plate 1 due to the shrinkage during cooling. It can be joined by caulking.

(Step 5)
In the present embodiment, between

steps

1 and 2, or between

steps

2 and 3, the interface between the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1 is filled or coated with a material to be an intermediate layer 10. Further may have a step 5 to perform. Specifically, in each of FIGS. 12, 14, 16, 18, 20, and 22, it is preferable to perform the procedure before and after (C) or (C), in other words, between (B) and (C), ( It is preferable to form an intermediate layer while performing C) or between (C) and (D) (not shown in each figure), and a sputtering target-backing having an intermediate layer shown in FIGS. 8 to 11. A plate joint can be manufactured. Although the intermediate layers are shown in the form of two layers in FIGS. 10 and 11, if the effect of the intermediate layer such as ensuring the adhesion between the sputtering target 2 and the backing plate 1 is obtained, the intermediate layer is three or more layers. It may be in the form of.

Further, even in the method of heating both the backing plate 1 and the sputtering target 2, the back surface 8 of the target of the sputtering target 2 and the plate surface 3 of the backing plate 1 are connected between the

steps

1 and 2 or between the

steps

2 and 3. The interface may further include a step 5 of filling or coating the material to be the intermediate layer 10. Specifically, in each of FIGS. 13, 15, 17, 19, 21, and 23, it is preferable to form an intermediate layer between (B) and (C) (not shown in each figure), and FIG. A sputtering target-backing plate junction having the intermediate layer shown in FIG. 11 can be manufactured. Although the intermediate layers are shown in the form of two layers in FIGS. 10 and 11, if the effect of the intermediate layer such as ensuring the adhesion between the sputtering target 2 and the backing plate 1 is obtained, the intermediate layer is three or more layers. It may be in the form of.

(Step 6)
In the present embodiment, it is preferable to further have a step 6 of pressing the sputtering target 2 in order to diffuse the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1 between the

steps

3 and 4. .. When the surfaces are brought into close contact with each other by pressing, the sputtering target 2 and the backing plate 1 can be diffused, or the sputtering target 2 and the intermediate layer 10 can be diffused, and the intermediate layer 10 and the backing plate 1 can be diffused. Adhesion is improved and heat conduction can be kept good. Further, pressing the sputtering target 2 also helps prevent the sputtering target from warping during shrinkage.

(Heating method in step 2, step 3 and step 4)
In this embodiment, at least in step 2, step 3 and step 4, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS) and a hot plate are used. It is preferable to use at least one of the heating methods. Any device capable of heating and cooling can be applied, such as hot press sintering method (HP), hot isotropic pressure sintering method (HIP), discharge plasma sintering method (SPS) and hot. It is carried out using at least one of the heating methods using a plate. Cooling includes natural cooling.

(Heating method in step 6)
In the present embodiment, in step 6, at least one of a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), and a discharge plasma sintering method (SPS) can be used. preferable. It can be applied to any device that can perform heating and pressing at the same time, and can be applied to hot press sintering method (HP), hot isotropic pressure sintering method (HIP), and discharge plasma sintering method (SPS). It can be done using either.

(Atmosphere in step 6)
Further, in the present embodiment, in step 6, it is preferable that the atmosphere is a reduced pressure atmosphere of 10 Pa or less or an atmosphere of an oxygen concentration of 1000 ppm or less, the heating temperature is 100 to 1000 ° C., and the pressing is in the range of 0 Pa or more and 80 MPa or less. The oxygen content of the sputtering target can be suppressed.

After manufacturing the sputtering target-backing plate joint by the hot plate method, heating and pressing may be performed again by the discharge plasma sintering method (SPS) or the like.

The sputtering target-backing plate joint 100 shown in FIG. 2 can be manufactured by thermally expanding the backing plate 1 as shown in FIGS. 12 and 13 and cooling after fitting the sputtering target 2. Further, the sputtering target-backing plate joint 200 shown in FIG. 4 can be manufactured by thermally expanding the backing plate 1 as shown in FIGS. 14 and 15 and cooling after fitting the sputtering target 2. Further, the sputtering target-backing plate joint 300 shown in FIG. 5 can be manufactured by thermally expanding the backing plate 1 as shown in FIGS. 16 and 17 and cooling after fitting the sputtering target 2. Further, the sputtering target-backing plate joint 400 shown in FIG. 6 can be manufactured by thermally expanding the backing plate 1 as shown in FIGS. 18 and 19 and cooling after fitting the sputtering target 2.

Further, in the present embodiment, it is preferable that after the step 4, the pressing or heating and pressing steps and the cooling step are performed once as a set or repeated twice or more. By performing the pressing or heating and pressing process and the cooling process as a set once or repeatedly twice or more, the bonding strength between the back surface of the target of the sputtering target and the plate surface of the backing plate can be further improved, and the adhesion can be further improved. The properties can be further improved and heat conduction can be performed more efficiently.

(Recovery method of sputtering target)
A case where the sputtering target-backing plate joint according to the present embodiment is attached to the sputtering apparatus and used, and the sputtering target is exhausted will be described. In the method of recovering the sputtering target according to the present embodiment, the sputtering target-backing plate joint according to the present embodiment is heated, and the distance between the pressing surfaces 6 of the backing plate 1 is the distance between the target side surfaces 9 of the sputtering target 2. It has a step A of thermally expanding until it becomes larger than the above, and a step B of removing the sputtering target 2 from the backing plate 1 and recovering the sputtering target from the sputtering target-backing plate joint. The form of removing the sputtering target 2 includes a form of removing the sputtering target 2 as it is and a form of removing the sputtering target 2 by applying an impact.

(Modification 1)
In the sputtering target-backing plate joint according to the present embodiment, the plate surface of the backing plate slightly smaller than the back surface of the target of the sputtering target is formed one step higher at the place where the sputtering target is installed, and then the side surface of the backing plate formed one step higher. The fastener may be fixed to form the pressing surface of the backing plate, and the sputtering target may be fixed in the pressing surface of the backing plate by utilizing the expansion due to heating and the contraction due to cooling of the backing plate.

(Modification 2)
In the form in which the convex portion 13 is provided, a part of the convex portion 13 may be replaced with the fastener 11. That is, the backing plate 1 may have both the protrusion 13 and the fastener 11.

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not construed as being limited to the examples.

(Example 1)
A bonded body corresponding to FIG. 8 is produced. First, a Φ50 × 7t (unit: mm) Al-30 atomic% Sc sputtering target 2 having a bending strength of 138 MPa and a backing plate 1 of A6061 which is an Al alloy of Φ70 × 8t (unit: mm) were prepared. The coefficient of linear expansion is 13.5 × ^10-6 / ° C for Al-30 atomic% Sc and 23.6 × ^10-6 / ° C for A6061. Next, a recess 17 having a depth of 2 mm and 0.1 mm smaller than the diameter of the sputtering target 2 was machined at the installation location of the sputtering target 2 on the backing plate 1. Next, the bottom surface 15 of the recess 17 of the backing plate 1 was filled with a 0.1 mm thick Ni plate material as the material of the intermediate layer 10. Next, the Al-30 atomic% Sc sputtering target 2 was placed on the recess 17 of the backing plate 1. At this time, the sputtering target 2 does not fit into the recess 17, but is above the Ni plate material (with a gap of 2 mm from the bottom surface 15 of the recess 17). Next, after raising the temperature to 250 ° C. in a reduced pressure atmosphere of 10 Pa or less using a discharge plasma sintering machine, the sputtering target 2 was filled in the recess 17 of the backing plate 1 in which the opening surface of the recess 17 was expanded by thermal expansion. Then, while pressing the sputtering target 2 at 10 MPa, the temperature was raised to 400 ° C. and held for 1 hour for diffusion bonding. Then, it was cooled to form a caulking structure in which the target side surface 9 was pressed by the pressing surface 6. The result is shown in FIG. As shown in FIG. 24, the target side surface 9 of the sputtering target 2 and the pressing surface 6 of the backing plate 1 are fixed by caulking, the back surface 8 of the target is also filled with Ni without gaps, heat conduction is good, and diffusion bonding is performed. At that time, cracking of the sputtering target 2 did not occur.

(Example 2)
A joint body provided with an intermediate layer is produced in the joint body corresponding to FIG. 7, particularly FIG. 7 (F). First, a ruthenium sputtering target 2 of Φ156 × 6t (unit: mm) manufactured by a melting method and a brass backing plate 1 having a convex shape of Φ156 × 7t in the upper stage and Φ240 × 137t (unit: mm) in the lower stage are attached. Got ready. The coefficient of linear expansion is 6.75 × ^10-6 / ° C for ruthenium and 21.2 × ^10-6 / ° C for brass. Next, the lower part of the side surface of the sputtering target 2 was removed by grinding 8 mm inward from the outer circumference of the

sputtering target

2 and 3 mm in height from the back surface 8 of the target to form a notch. After that, the lower portion of the side surface of the sputtering target 2 was formed by cutting the uneven portion 18 of the target side surface 9 of the sputtering target 2 from the back surface 8 of the target toward the plane of the notch. An image of the notch portion of the sputtering target 2 after cutting is shown in FIG. 25 (A). Next, at the convex portion of the backing plate 1, cutting was performed with a diameter of 139.6 mm and a depth of 3 mm to form a convex portion 13 for pressing the lower portion of the target side surface 9 of the sputtering target 2. Further, the uneven portion 19 is formed on the pressing surface 6 of the convex portion 13 of the backing plate 1 at a position corresponding to the uneven portion 18 of the target side surface 9 of the sputtering target 2. Next, the plate surface 3 inside the convex portion 13 of the backing plate 1 was filled with a 0.2 mm thick Al plate material. Next, the backing plate 1 filled with the Al plate material is heated to 230 ° C. with a hot plate, the pressing surface 6 of the backing plate 1 is expanded from the lower part of the target side surface 9 of the sputtering target 2, and then the sputtering target 2 is subjected to. The lower part of the target side surface 9 was filled inside the convex portion 13 of the backing plate 1. Then, caulking was performed by heat shrinkage by natural cooling to obtain a sputtering target-backing plate junction. After joining, the temperature is raised to 400 ° C. for 1 hour while pressurizing from the target surface 7 of the sputtering target 2 toward the plate surface 3 of the backing plate 1 at 10 MPa in a reduced pressure atmosphere of 10 Pa or less using a discharge plasma sintering machine. After performing diffusion bonding by holding, it was cooled. The whole image of the sputtering target-backing plate joint is shown in FIG. 25 (B). A partially enlarged image of the sputtering target-backing plate joint is shown in FIG. 25 (C). The sputtering target-backing plate joint has a structure in which the uneven portion 18 of the target side surface 9 and the uneven portion 19 of the pressing surface 6 are fitted to each other, and the outer periphery of the sputtering target 2 is formed by the pressing surface 6 of the backing plate 1. By pressing the lower part of the side surface 9, it is fixed by caulking, and the target back surface 8 of the sputtering target 2 and the plate surface 3 of the backing plate 1 are in close contact with each other via the Al plate, and the sputtering target 2 is not cracked. rice field.

(Example 3)
In the joined body corresponding to FIG. 4, a joined body is produced in which an uneven portion is provided on the side surface of the target, an uneven portion is provided on the pressing surface, and an intermediate layer is further provided. First, a ruthenium sputtering target 2 of Φ156 × 9t (unit: mm) prepared by a melting method and a brass backing plate 1 of Φ240 × 20t (unit: mm) were prepared. The coefficient of linear expansion is 6.75 × ^10-6 / ° C for ruthenium and 21.2 × ^10-6 / ° C for brass. Next, an annular recess of 0.5 mm was formed on the side surface 9 of the target by a lathe along the side surface direction. As a result, an annular convex portion that is convex with respect to the bottom surface of the annular concave portion is formed on the target side surface 9. Next, a recess 17 having a depth of 4 mm, which is 0.4 mm smaller than the diameter of the sputtering target 2, is machined at the installation location of the sputtering target 2 on the backing plate 1. Further, a 0.5 mm annular recess was formed on the side surface 16 of the recess 17 of the backing plate 1 at a position corresponding to the annular protrusion of the sputtering target 2. Next, the bottom surface 15 of the recess 17 of the backing plate 1 was filled with a 0.1 mm thick Ni plate material and a small amount of In powder. This trace amount of In powder is filled in the gap around the Ni plate material. Next, the sputtering target 2 was installed on the recess 17 of the backing plate 1. Next, the temperature is raised to 250 ° C. in a reduced pressure atmosphere of 10 Pa or less using a discharge plasma sintering machine, and then the sputtering target 2 is filled in the recess 17 of the backing plate 1. After filling, while pressing the sputtering target 2 at 10 MPa, the temperature is further raised to 400 ° C., diffusion bonding is performed by holding for 1 hour, and then cooling is performed to form a caulking structure in which the target side surface 9 is pressed by the pressing surface 6. Formed. The result is shown in FIG. The joined body has a structure in which the uneven portion 18 of the target side surface 9 and the uneven portion 19 of the side surface 16 of the concave portion 17 are fitted to each other. As shown in FIG. 26, the side surface 9 of the target and the side surface 16 of the recess 17 of the backing plate are fixed by caulking, and the back surface 8 of the target is also filled with Ni and In without gaps, and the heat conduction is good and diffusion bonding is performed. No cracking occurred in the sputtering target 2.

(Comparative Example 1)
A Φ70 × 7t (unit: mm) Al-30 atomic% Sc sputtering target having a bending strength of 138 MPa and a backing plate of A6061 which is a Φ80 × 8t (unit: mm) Al alloy were prepared. The coefficient of linear expansion is 13.5 × ^10-6 / ° C for Al-30 atomic% Sc and 23.6 × ^10-6 / ° C for A6061. Next, an Al-30 atomic% Sc sputtering target was placed on the backing plate. Next, using a discharge plasma sintering machine, the temperature was raised to 500 ° C. in a vacuum atmosphere, and then diffusion bonding was performed by holding for 1 hour while pressing the sputtering target at 10 MPa. The result is shown in FIG. 27. The joint has no recess 17 formed in the backing plate and does not have a caulking structure. As shown in FIG. 27, the sputtering target and the backing plate are joined, but the difference in the coefficient of linear expansion is large, so that the sputtering target is cracked due to the stress of compression when the backing plate is cooled.

(Comparative Example 2)
A Φ70 × 7t (unit: mm) Al-30 atomic% Sc sputtering target having a bending strength of 138 MPa and a backing plate of aluminum bronze which is an Al alloy of Φ80 × 8t (unit: mm) were prepared. The coefficient of linear expansion is 13.5 × ^10-6 / ° C for Al-30 atomic% Sc and 16.5 × ^10-6 / ° C for aluminum bronze. Next, an Al-30 atomic% Sc sputtering target was placed on the backing plate. Next, using a discharge plasma sintering machine, the temperature was raised to 500 ° C. in a vacuum atmosphere, and then diffusion bonding was performed by holding for 1 hour while pressing the sputtering target at 10 MPa. The result is shown in FIG. The joint has no recess 17 formed in the backing plate and does not have a caulking structure. As shown in FIG. 28, the coefficient of linear expansion of the sputtering target and the coefficient of linear expansion of the backing plate were made closer to each other than in Comparative Example 1, but the difference in the coefficient of linear expansion between the sputtering target and the backing plate made the sputtering target different. The sputtering target peeled off from the backing plate due to insufficient bonding to the backing plate as well as cracking due to the stress of compression.

(Comparative Example 3)
A ruthenium sputtering target of Φ194 × 10t (unit: mm) and a backing plate of oxygen-free copper of Φ240 × 20t (unit: mm) were prepared by a sintering method. The coefficient of linear expansion is 6.75 × ^10-6 / ° C for ruthenium and 16.2 × ^10-6 / ° C for oxygen-free copper. Next, a ruthenium sputtering target was placed on the backing plate. Next, using a discharge plasma sintering machine, the temperature was raised to 700 ° C. in a vacuum atmosphere, and then diffusion bonding was performed by holding for 1 hour while pressing the sputtering target at 10 MPa. The result is shown in FIG. The joint has no recess 17 formed in the backing plate and does not have a caulking structure. As shown in FIG. 29, due to the difference in linear expansion coefficient between the sputtering target and the backing plate, the sputtering target was cracked due to the stress of compression.

(Comparative Example 4)
A ruthenium sputtering target of Φ180 × 5t (unit: mm) and a 15mm-thick container called CAN made of oxygen-free copper used as a backing plate with a recess of Φ180.1mm and a depth of 10mm formed by the sintering method. Prepared. The coefficient of linear expansion is 6.75 × ^10-6 / ° C for ruthenium and 16.2 × ^10-6 / ° C for oxygen-free copper. Next, after the sputtering target was encapsulated in the CAN, a Φ180 × 5t lid made of oxygen-free copper was placed on the sputtering target, and the inside of the CAN was evacuated and sealed. Next, using a HIP device, the temperature was raised to 500 ° C., and then CAN was pressurized at 100 MPa to perform diffusion bonding. At this time, the container was pressurized from the entire surface, and the container and the target were diffusion-bonded. After diffusion bonding, the sputtering target and backing plate were carved out using a lathe. The result is shown in FIG. As shown in FIG. 30, although the diffusion bonding was completed, the sputtering target was subjected to the stress of compression due to the difference in the linear expansion coefficient between the sputtering target and the backing plate, and fine cracks were formed from the central portion toward the outer periphery. It occurred radially and cracked.

50,100,200,300,301,400,401,500,600,700,800,900 sputtering target-backing plate joint 1 backing plate 2 sputtering target 3 backing plate plate surface 4 backing plate plate back surface 5 backing Plate side surface of plate 6 Pressing surface of backing plate 7 Target surface of sputtering target 8 Back side of target of sputtering target 9 Target side surface of sputtering target 10 Intermediate layer 10a Intermediate layer 10b installed at interface with backing plate 10b At interface with sputtering target Installed intermediate layer 11 Fastener 13 Convex portion provided on the plate surface of the backing plate 15 Bottom surface of the recess of the backing plate 16 Side surface of the recess of the backing plate 17 Recessed portion of the backing plate 18 Concavo-convex portion on the side surface of the target of the sputtering target 19 Backing plate Uneven part of the pressing surface of

Claims

In a sputtering target-backing plate junction in which a sputtering target is bonded to a backing plate.
The backing plate has a plate surface, a plate back surface, a plate side surface, and a pressing surface.
The sputtering target has a target surface, a target back surface facing the plate surface, and a target side surface.
A sputtering target-backing plate joint, characterized in that the sputtering target is fixed to the backing plate by pressing the side surface of the target with the pressing surface.
The sputtering target-backing plate joint according to claim 1, wherein the pressing of the pressing surface is caused by heat shrinkage of the backing plate.
The sputtering target-backing plate joint according to claim 1 or 2, wherein the backing plate has a recess on the plate surface, and the side surface of the recess is the pressing surface.
The sputtering target-backing plate joint according to any one of claims 1 to 3, wherein the backing plate has a convex portion on the plate surface, and the side surface of the convex portion is the pressing surface. body.
The sputtering target-backing plate joint according to any one of claims 1 to 4, wherein the backing plate has a fastener, and the side surface of the fastener is the pressing surface.
The sputtering target-backing plate joint according to claim 5, wherein the fastener is fixed to the plate surface or the plate side surface of the backing plate.
The side surface of the target has an uneven portion and has an uneven portion.
The pressing surface has an uneven portion and
The sputtering target-backing plate joint according to any one of claims 1 to 6, wherein the uneven portion on the side surface of the target and the uneven portion on the pressing surface have a structure of being fitted to each other.
An intermediate layer of 2.5 mm or less is provided at the interface between the sputtering target and the backing plate, and the intermediate layer is a metal of at least one of Ni, Cr, Al, and Cu, or at least Ni, Cr, Al, and Cu. The sputtering target-backing plate joint according to any one of claims 1 to 7, wherein the plate material is made of an alloy containing any one of them, a powder, or a combination of the plate material and the powder.
An intermediate layer of 10 μm or less is provided at the interface between the sputtering target and the backing plate, and the intermediate layer is at least one of Ni, Cr, Al, and Cu, or at least one of Ni, Cr, Al, and Cu. The sputtering target-backing plate junction according to any one of claims 1 to 7, wherein the thin film is made of an alloy containing one kind.
An intermediate layer of 1.0 mm or less is provided at the interface between the sputtering target and the backing plate, and the intermediate layer is made of a metal containing at least one of In and Zn or an alloy containing at least one of In and Zn. The sputtering target-backing plate joint according to any one of claims 1 to 7, wherein the plate material, powder, or a combination of the plate material and the powder is used.
There are two or more intermediate layers at the interface between the sputtering target and the backing plate, and the intermediate layer is
A plate or powder made of at least one metal of Ni, Cr, Al or Cu of 2.5 mm or less or an alloy containing at least one of Ni, Cr, Al or Cu, or a combination of the plate material and the powder.
A thin film made of a metal containing at least one of Ni, Cr, Al, and Cu of 10 μm or less or an alloy containing at least one of Ni, Cr, Al, and Cu, or a thin film.
The claim is characterized by comprising a plate material, a powder, or a combination of the plate material and the powder, which is made of a metal containing at least one of In and Zn of 1.0 mm or less or an alloy containing at least one of In and Zn. The sputtering target-backing plate junction according to any one of 1 to 7.
The sputtering target-backing plate joint according to any one of claims 1 to 11, wherein the material of the sputtering target is an Al—Sc alloy, Ru, Ru alloy, Ir or Ir alloy.
The sputtering target-backing plate according to any one of claims 1 to 11, wherein the material of the sputtering target is a Li-based oxide, a Co-based oxide, a Ti-based oxide, or an Mg-based oxide. Joined body.
The claim is that the material of the backing plate is Al, Al alloy, Cu, Cu alloy, Fe or Fe alloy, and the linear expansion coefficient of the backing plate is 30.0 × 10 -6 / ° C. or less. The sputtering target-backing plate alloy according to any one of 1 to 13.
The sputtering target-backing plate joint according to any one of claims 1 to 14, wherein the bending strength of the sputtering target is 500 MPa or less.
The pressing surface of the backing plate has at least a pair of surfaces arranged so as to face each other across the side surface of the target.
The relationship between the distance between the pressing surfaces of the paired backing plates and the distance between the contact surfaces of the sputtering targets that are in contact with the pressing surfaces of the paired backing plates among the target side surfaces is (Equation 1). The sputtering target-backing plate joint according to any one of claims 1 to 15, characterized in that (Equation 5) is satisfied.
(Number 1) D TG > D BP
(Number 2) D BP = D TG -ΔD × C
(Equation 3) ΔD = D BP × ΔT × CTE BP −D TG × ΔT × CTE TG
(Number 4) D TG -ΔD × 4.0 ≦ D BP ≦ D TG -ΔD × 0.5
(Number 5) CTE BP > CTE TG
However, D BP , D TG , ΔD, C, T, ΔT, CTE BP and CTE TG mean the following, respectively.
DBP : Distance (mm) between the pressing surfaces of the paired backing plates at room temperature.
DTG : Distance (mm) between the contact surfaces of the sputtering targets that come into contact with the pressing surfaces of the paired backing plates at room temperature.
T: Temperature (° C) at which the backing plate is thermally expanded to fit the sputtering target (where T> room temperature)
ΔT: T-room temperature (° C)
CTE BP : Linear expansion coefficient (1 / ° C.) of the backing plate at temperature T
CTE TG : Coefficient of linear expansion of sputtering target at temperature T (1 / ° C)
C: Coefficient (however, C = 0.5 to 4.0)
ΔD: Difference in thermal expansion amount between the backing plate and the sputtering target when the temperature is raised from room temperature to temperature T (mm)
The pressing surface of the backing plate has at least a pair of surfaces arranged so as to face each other across the side surface of the target.
The relationship between the distance between the pressing surfaces of the paired backing plates and the distance between the contact surfaces of the sputtering targets that are in contact with the pressing surfaces of the paired backing plates among the target side surfaces is (Equation 6). The sputtering target-backing plate joint according to any one of claims 1 to 15, characterized in that (Equation 10) is satisfied.
(Number 6) D TG > D BP
(Number 7) D BP = D TG -ΔD × C
(Equation 8) ΔD = D BP × ΔT × CTE BP −D TG × ΔT 1 × CT 1 E TG
(Equation 9) D TG −ΔD × 4.0 ≦ D BP ≦ D TG −ΔD × 0.5
(Number 10) CTE BP > CT 1 ETG
However, D BP , D TG , ΔD, C, T, ΔT, T 1 , ΔT 1 , CTE BP and CT 1 E TG mean the following, respectively.
DBP : Distance (mm) between the pressing surfaces of the paired backing plates at room temperature.
DTG : Distance (mm) between the contact surfaces of the sputtering targets that come into contact with the pressing surfaces of the paired backing plates at room temperature.
T: The temperature (° C.) of the backing plate when the backing plate is thermally expanded to fit the sputtering target (where T> room temperature, T> T 1 ).
ΔT: T-room temperature (° C)
T 1 : Temperature (° C.) of the sputtering target when the backing plate is thermally expanded to fit the sputtering target (however, T 1 ≧ room temperature, T> T 1 )
ΔT 1 : T 1 -room temperature (° C)
CTE BP : Linear expansion coefficient (1 / ° C.) of the backing plate at temperature T
CT 1 ETG : Linear expansion coefficient ( 1 / ° C.) of the sputtering target at temperature T1.
C: Coefficient (however, C = 0.5 to 4.0)
ΔD: Difference in thermal expansion amount between the backing plate when the temperature is raised from room temperature to temperature T and the sputtering target when the temperature is raised from room temperature to temperature T 1 (mm)
One of claims 1 to 17, wherein the sputtering target is fitted in the backing plate so that the plate surface of the backing plate is exposed on the entire circumference of the target surface of the sputtering target. One of the sputtering target-backing plate joints.
The sputtering target-backing plate joint according to any one of claims 1 to 18, wherein the target surface protrudes from the plate surface.
Step 1 of preparing a backing plate having a plate surface, a plate back surface, a plate side surface, and a pressing surface, a target surface, a target back surface facing the plate surface, and a sputtering target having a target side surface.
Step 2 of heating the backing plate to thermally expand it,
Step 3 of arranging the sputtering target and the backing plate so that the side surface of the target and the pressing surface of the backing plate face each other.
Step 4 of cooling the backing plate to form a caulking structure in which the side surface of the target is pressed by the pressing surface.
A method for manufacturing a sputtering target-backing plate joint.
Further having step 5 of filling or coating the contact point between the sputtering target and the backing plate with a material to be an intermediate layer between the steps 1 and 2 or between the steps 2 and 3. The method for manufacturing a sputtering target-backing plate joint according to claim 20.
20. The aspect 20 further comprises a step 6 of pressing the sputtering target in order to diffuse the back surface of the target of the sputtering target and the plate surface of the backing plate between the steps 3 and 4. 21. The method for producing a sputtering target-backing plate junction according to 21.
At least in the step 2, the step 3 and the step 4, a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), a discharge plasma sintering method (SPS) and a heating method using a hot plate. The method for producing a sputtering target-backing plate junction according to any one of claims 20 to 22, wherein the method is performed by using at least one of the methods.
The claim is characterized in that the step 6 is performed by using at least one of a hot press sintering method (HP), a hot isotropic pressure sintering method (HIP), and a discharge plasma sintering method (SPS). Item 22. The method for manufacturing a sputtering target-backing plate joint according to Item 22.
22 or 24 according to claim 22, wherein the step 6 has a reduced pressure atmosphere of 10 Pa or less or an atmosphere of an oxygen concentration of 1000 ppm or less, a heating temperature of 100 to 1000 ° C., and a pressing range of 0 Pa or more and 80 MPa or less. The method for manufacturing a sputtering target-backing plate joint according to the above.
The sputtering target according to any one of claims 20 to 25, wherein after the step 4, the pressing or heating and pressing steps and the cooling step are performed once or twice or more as a set. -A method for manufacturing a backing plate joint.
The step A of heating the sputtering target-backing plate joint according to any one of claims 1 to 19 and thermally expanding the joint until the pressing surface is separated from the side surface of the target.
A method for recovering a sputtering target, which comprises a step B of removing the sputtering target from the backing plate and recovering the sputtering target from the sputtering target-backing plate joint.