WO2022062006A1 - 一种电容式麦克风及其制造方法 - Google Patents

一种电容式麦克风及其制造方法 Download PDF

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Publication number
WO2022062006A1
WO2022062006A1 PCT/CN2020/122192 CN2020122192W WO2022062006A1 WO 2022062006 A1 WO2022062006 A1 WO 2022062006A1 CN 2020122192 W CN2020122192 W CN 2020122192W WO 2022062006 A1 WO2022062006 A1 WO 2022062006A1
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Prior art keywords
layer
electrode
back plate
diaphragm electrode
condenser microphone
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PCT/CN2020/122192
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English (en)
French (fr)
Inventor
钟晓辉
屠兰兰
张睿
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瑞声声学科技(深圳)有限公司
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Publication of WO2022062006A1 publication Critical patent/WO2022062006A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups

Definitions

  • the present invention relates to the technical field of acousto-electric conversion devices, in particular to a condenser microphone and a manufacturing method thereof.
  • a condenser microphone is usually composed of a back plate electrode 1 and a diaphragm electrode 2 to form a flat capacitor; the diaphragm electrode 2 has a certain flexibility and can make the diaphragm vibrate through the air; and the back plate electrode 1 has a certain rigidity and is full of holes, also known as sound holes 3.
  • the back plate electrodes are not affected by sound waves and are fixed. The distance between the membrane electrode 2 and the back plate electrode 1 and the capacitance value of the plate can be converted into an electrical signal by detecting the change of the capacitance value of the plate.
  • the structure of the above-mentioned condenser microphone easily allows airborne particles and water vapor to enter the acoustic cavity 4 between the back plate electrode 1 and the diaphragm electrode 2, and condense to form conductive particles, resulting in a short circuit between the back plate electrode 1 and the diaphragm electrode 2. It is possible that this will affect the performance of the microphone.
  • the purpose of the present invention is to provide a condenser microphone and a manufacturing method thereof.
  • an isolation layer on the back plate electrode By arranging an isolation layer on the back plate electrode, the technical problem of short circuit caused by the conductive particles existing between the back plate electrode and the diaphragm electrode can be avoided.
  • the present invention provides a condenser microphone, comprising a base with a back cavity, a back plate fixed on the base, and a diaphragm electrode arranged opposite to the back plate, the back plate A back plate electrode is arranged on the side facing the diaphragm electrode, and an isolation layer is arranged on the back plate electrode.
  • the condenser microphone further includes a support portion disposed between the back plate and the diaphragm electrode.
  • the diaphragm electrode is attached to the base, the support portion is fixed on the diaphragm electrode or the base, and the back plate is fixed and supported on the base through the support portion.
  • the back plate and the support portion are integrally formed.
  • the support portion is a ring-shaped structure or a polygonal-frame structure and surrounds the diaphragm electrode.
  • the backplane, the backplane electrodes and the isolation layer are provided with a plurality of penetrating acoustic holes.
  • a through hole is formed on the diaphragm electrode.
  • the present invention also provides a method for manufacturing a condenser microphone, comprising the following steps:
  • a penetrating first groove is formed by etching at the edge of the first sacrificial layer
  • a plurality of through holes are etched on the diaphragm electrode layer to form a diaphragm electrode, and the plurality of through holes are spaced around a middle area of the diaphragm electrode to form a vibrating portion of the diaphragm electrode;
  • a plurality of acoustic holes are etched through the backplane layer, the backplane electrode layer and the isolation layer;
  • a back cavity exposing a part of the bottom surface of the first sacrificial layer is formed by etching at the bottom of the silicon substrate;
  • the first sacrificial layer and the second sacrificial layer are removed, so that an acoustic cavity is formed between the isolation layer and the diaphragm electrode layer, and the acoustic hole is communicated with the acoustic cavity, and the through hole is respectively connected with the acoustic cavity and the acoustic cavity. Back cavity communication.
  • the material of the diaphragm electrode layer and the back plate electrode layer is polysilicon
  • the material of the back plate layer is silicon nitride
  • the material of the isolation layer is undoped polysilicon, silicon nitride or carbide. silicon.
  • the material of the first sacrificial layer and the second sacrificial layer is silicon oxide, and the first sacrificial layer and the second sacrificial layer are removed by wet etching.
  • an isolation layer made of insulating material is provided on the back plate electrode, and the back plate electrode and the diaphragm electrode are isolated by the isolation layer, thereby effectively preventing the back plate electrode and the diaphragm electrode from being caused by conductive particles in the acoustic cavity.
  • the problem of short circuit thus improving the stability of the condenser microphone.
  • FIG. 1 is a cross-sectional view of a condenser microphone in the prior art
  • FIG. 2 is a cross-sectional view of a condenser microphone according to an embodiment of the present invention
  • FIG. 3A to FIG. 3K are schematic diagrams illustrating steps of a method for manufacturing a condenser microphone according to an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as “first” or “second” may expressly or implicitly include one or more of that feature.
  • “plurality” means two or more, unless otherwise expressly and specifically defined.
  • an embodiment of the present invention provides a condenser microphone, including a base 10 having a back cavity 11 , a back plate 70 fixed on the base 10 , and a back plate 70 disposed opposite to the back plate 70 .
  • the diaphragm electrode 30 and the base 10 are etched from a silicon substrate in the embodiment, forming a ring structure and enclosing a back cavity 11 that runs through up and down.
  • the side of the back plate 70 facing the diaphragm electrode 30 is provided with a back plate electrode 60 , an acoustic cavity 73 is formed between the back plate electrode 60 and the diaphragm electrode 30 , and an isolation layer 50 is arranged on the back plate electrode 60 .
  • the material of the isolation layer 50 is an insulating material, such as undoped polysilicon, silicon nitride, silicon carbide, etc., the purpose is to isolate the back plate electrode 60 and the diaphragm electrode 30, and effectively avoid the back plate electrode 60 and the diaphragm electrode 30 due to the acoustic cavity.
  • the problem of short circuit caused by the conductive particles in 73 improves the stability of the condenser microphone.
  • the condenser microphone of this embodiment further includes a support portion 71 disposed between the back plate 70 and the diaphragm electrode 30 to insulate the back plate electrode 60 and the diaphragm electrode 30 relative to each other.
  • the diaphragm electrode 30 is attached to the base 10 , the support portion 71 is fixed on the diaphragm electrode 30 or the base 10 , and the back plate 70 is fixed and supported on the base 10 through the support portion 71 .
  • the substrate 10 is described. That is to say, in this embodiment, the back plate 70 is located above the diaphragm electrode 30 , the back plate electrode 60 is arranged on the lower surface of the back plate 70 , and the isolation layer 50 is arranged on the lower surface of the back plate electrode 60 .
  • the diaphragm electrode 30 can also be disposed above the back plate 70 . In this case, the back plate electrode 60 is disposed on the upper surface of the back plate 70 , and the isolation layer 50 is disposed on the upper surface of the back plate electrode 60 .
  • the support part 71 is made of insulating material.
  • the material of the support part 71 can also be the same as that of the back plate 70 , or even an integral molding structure, such as the material of the support part 71 and the back plate 70 Both use silicon nitride.
  • the support portion 71 is a ring-shaped structure or a multi-frame structure and surrounds the diaphragm electrode 30 .
  • the support portion 71 may adopt a structure similar to that of the substrate 10 .
  • the back plate 70 , the back plate electrode 60 and the isolation layer 50 are provided with a plurality of sound holes 72 penetrating through them, and the plurality of sound holes 72 are evenly distributed on the back plate 70 , so that sound waves can pass through the sound holes 72 and enter the sound cavity 73 .
  • the sound signal is converted into electric signal.
  • the plurality of sound holes 72 may also be non-uniformly distributed.
  • the back plate 70 may also be made of a conductive material.
  • the back plate 70 and the back plate electrode 60 are integrally formed, and the back plate electrode 60 and the diaphragm electrode 30 are insulated by the support portion 71 .
  • the diaphragm electrode 30 is a structure of an integral conductive material.
  • a composite layer structure may also be used, that is, the diaphragm electrode 30 includes a diaphragm and a conductive layer disposed on the diaphragm.
  • the diaphragm electrode 30 is provided with through holes 31 , and the through holes 31 are multiple, and are arranged at intervals around the middle area of the diaphragm electrode 30 .
  • the shape of the vibration part can be circular, elliptical or polygonal.
  • the present invention further provides a manufacturing method of a condenser microphone.
  • the specific steps of the manufacturing method of this embodiment are as follows:
  • a silicon substrate 110 is provided, and a first sacrificial layer 120 is deposited on the silicon substrate 110 .
  • the material of the first sacrificial layer 120 can be silicon oxide, for example.
  • a first groove 121 is formed through etching at the edge of the first sacrificial layer 120 .
  • a diaphragm electrode layer 130 is deposited on the first sacrificial layer 120, and the part deposited into the first groove 121 is connected to the silicon substrate 110; the diaphragm electrode
  • the material of the layer 130 may be, for example, polysilicon.
  • step S104 a plurality of through holes 131 are etched on the diaphragm electrode layer 130 to form a diaphragm electrode, and the plurality of through holes 131 are spaced around the middle area of the diaphragm electrode to form the diaphragm electrode. The vibrating part of the diaphragm electrode is described.
  • a second sacrificial layer 140 is deposited on the diaphragm electrode layer 130, and the parts deposited on the plurality of through holes 131 are connected to the first sacrificial layer 120;
  • the material of the sacrificial layer 140 may be silicon oxide, for example.
  • an isolation layer 150 and a backplane electrode layer 160 are sequentially deposited on the first sacrificial layer 120 ;
  • the isolation layer 150 may be made of undoped polysilicon, silicon nitride or silicon carbide, for example.
  • the material of the back plate electrode layer 160 may be polysilicon, for example.
  • a second groove 141 is formed through etching on the edge portions of the backplane electrode layer 160 , the isolation layer 150 and the second sacrificial layer 140 .
  • a backplate layer 170 is deposited on the backplate electrode layer 160 , and the portion deposited on the second groove 141 is connected to the diaphragm electrode layer 130 , thereby forming a support portion 171 ;
  • the material of the back plate layer 170 can be silicon nitride, for example.
  • step S109 a plurality of acoustic holes 172 are etched through the backplane layer 170 , the backplane electrode layer 160 and the isolation layer 150 .
  • a back cavity 111 exposing a part of the bottom surface of the first sacrificial layer 120 is formed by etching at the bottom of the silicon substrate 110 .
  • step S111 the first sacrificial layer 120 and the second sacrificial layer 140 are removed by wet etching, so as to form an acoustic cavity 173 between the isolation layer 150 and the diaphragm electrode layer 130, and make all the
  • the acoustic hole 172 communicates with the acoustic cavity 173
  • the through hole 131 communicates with the acoustic cavity 173 and the back cavity 111 respectively.
  • the manufacturing method of the condenser microphone according to the embodiment of the present invention is provided.
  • the manufacturing process of the condenser microphone produced by the method of this embodiment is simple, the process cost is low, and the mass production is easy.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

本发明提供了一种电容式麦克风及其制造方法，该电容式麦克风包括具有背腔的基底、固定于所述基底上的背板、以及与所述背板相对间隔设置的振膜电极，所述背板朝向所述振膜电极的一侧设有背板电极，所述背板电极上设有隔离层。本发明实施例通过在背板电极上设有绝缘材料制成的隔离层，通过隔离层隔绝背板电极和振膜电极，有效避免了背板电极和振膜电极因声腔中的导电颗粒而造成短路的问题，从而提升了电容式麦克风的稳定性。

Description

一种电容式麦克风及其制造方法 技术领域
本发明涉及声电转换装置技术领域,具体涉及一种电容式麦克风及其制造方法。
 背景技术
如图1所示，电容式麦克风通常由背板电极1和振膜电极2组成，从而形成一个平板电容；其中振膜电极2具有一定柔韧性，可通过空气使振膜振动；而背板电极1具有一定刚性，并且布满孔洞，也称为声孔3，背板电极不受声波的影响而固定不动，声波可穿过这些声孔3，使振膜电极2往复振动，进而改变振膜电极2和背板电极1之间的距离以及平板电容值，通过检测平板电容值的变化，就可以把声音信号转换为电信号。
但是上述电容式麦克风的结构容易使空气中颗粒物和水汽进入背板电极1和振膜电极2之间的声腔4中，凝结形成导电颗粒，从而导致背板电极1和振膜电极2会有短路的可能，这将影响麦克风的性能。
因此，为了避免背板电极和振膜电极因导电颗粒造成的短路风险，有必要对结构进行改进以提升麦克风的稳定性。
 技术问题
本发明的目的在于提供一种电容式麦克风及其制造方法，通过在背板电极上设置一隔离层，以避免因背板电极和振膜电极之间所存在的导电颗粒造成短路的技术问题。
 技术解决方案
为实现上述目的，本发明提供了一种电容式麦克风，包括具有背腔的基底、固定于所述基底上的背板、以及与所述背板相对间隔设置的振膜电极，所述背板朝向所述振膜电极的一侧设有背板电极，所述背板电极上设有隔离层。
一个实施例中，所述电容式麦克风还包括设于所述背板和所述振膜电极之间的支撑部。
一个实施例中，所述振膜电极贴于所述基底上，所述支撑部固定于所述振膜电极或所述基底上，所述背板通过所述支撑部固定支撑于所述基底。
一个实施例中，所述背板与所述支撑部为一体成型结构。
一个实施例中，所述支撑部为环形结构或多边框型结构并围绕所述振膜电极。
一个实施例中，所述背板、背板电极以及隔离层上设有多个贯穿的声孔。
一个实施例中，所述振膜电极上设有贯穿的通孔。
本发明还提供了一种电容式麦克风的制造方法，包括如下步骤：
提供一硅基板，并在硅基板上沉积第一牺牲层；
在所述第一牺牲层的边缘刻蚀形成有贯穿的第一凹槽；
在所述第一牺牲层上沉积振膜电极层，且沉积到所述第一凹槽内的部分与所述硅基板连接；
在所述振膜电极层上刻蚀多个通孔从而形成振膜电极，所述多个通孔围绕振膜电极的中间区域间隔设置从而形成所述振膜电极的振动部；
在所述振膜电极层上沉积第二牺牲层，且沉积到所述多个通孔的部分与所述第一牺牲层连接；
在所述第一牺牲层上依次沉积隔离层以及背板电极层；
将所述背板电极层、隔离层以及第二牺牲层的边缘部分刻蚀形成有贯穿的第二凹槽；
在背板电极层上沉积背板层，且沉积到所述第二凹槽的部分与所述振膜电极层连接，从而形成支撑部；
在背板层、背板电极层以及隔离层上贯穿的刻蚀有多个声孔；
在所述硅基板底部刻蚀形成露出所述第一牺牲层底面一部分的背腔；
去除第一牺牲层和第二牺牲层，从而在所述隔离层与振膜电极层之间形成声腔，并使所述声孔与所述声腔连通，以及所述通孔分别与所述声腔和背腔连通。
一个实施例中，所述振膜电极层和背板电极层的材料为多晶硅，所述背板层的材料为氮化硅，所述隔离层的材料为不掺杂多晶硅、氮化硅或碳化硅。
一个实施例中，所述第一牺牲层和第二牺牲层的材料为氧化硅，通过湿刻蚀的方法去除所述第一牺牲层和第二牺牲层。
 有益效果
本发明实施例通过在背板电极上设有绝缘材料制成的隔离层，通过隔离层隔绝背板电极和振膜电极，有效避免了背板电极和振膜电极因声腔中的导电颗粒而造成短路的问题，从而提升了电容式麦克风的稳定性。
 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中电容式麦克风的剖面图；
图2为本发明实施例电容式麦克风的剖面图；
图3A至图3K为本发明实施例电容式麦克风的制造方法各步骤的示意图。
 本发明的实施方式
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
下面结合附图和实施方式对本发明作进一步说明。
如图2所示，本发明实施例提供了一种电容式麦克风，包括具有背腔11的基底10、固定于所述基底10上的背板70、以及与所述背板70相对间隔设置的振膜电极30，基底10在实施例中为硅基板蚀刻而成，形成环形结构并围成上下贯穿的背腔11，该环形结构可以为圆形、方形、椭圆形、跑道型或正多边形等，背板70朝向所述振膜电极30的一侧设有背板电极60，背板电极60与振膜电极30之间形成声腔73，所述背板电极60上设有隔离层50。
隔离层50的材质为绝缘材料，例如不掺杂多晶硅、氮化硅、碳化硅等，目的在于隔绝背板电极60和振膜电极30，有效避免了背板电极60和振膜电极30因声腔73中的导电颗粒而造成短路的问题，从而提升了电容式麦克风的稳定性。
本实施例电容式麦克风还包括设于所述背板70和所述振膜电极30之间的支撑部71，使背板电极60和振膜电极30相对间隔绝缘。
具体地，振膜电极30贴于所述基底10上，所述支撑部71固定于所述振膜电极30或所述基底10上，所述背板70通过所述支撑部71固定支撑于所述基底10。也就是说，在本实施例中背板70位于振膜电极30的上方，背板电极60设于背板70的下表面，隔离层50设于背板电极60的下表面。当然，在其他实施例中，振膜电极30还可设置在背板70的上方，此时背板电极60设于背板70的上表面，隔离层50设于背板电极60的上表面。
支撑部71采用绝缘材料，当背板70也采用绝缘材料时，支撑部71的材质也可以采用与背板70的材料相同，甚至可以是一体成型结构，例如支撑部71和背板70的材质都采用氮化硅。
其中，所述支撑部71为环形结构或多边框型结构并围绕所述振膜电极30，在本实施例中，支撑部71可采用与基底10类似的结构。
背板70、背板电极60以及隔离层50上设有多个贯穿的声孔72，多个声孔72在背板70上均匀分布，以使声波可穿过这些声孔72进入声腔73从而使振膜电极30往复振动，进而改变振膜电极30和背板电极60之间的距离，通过检测振膜电极30和背板电极60所形成平板电容的电容值变化，从而把声音信号转换为电信号。当然，多个声孔72也可非均匀分布。
需要说明的是，背板70还可以采用导电材料制成，此时，背板70和背板电极60为一体形成，背板电极60和振膜电极30通过支撑部71进行绝缘。
本实施例中，振膜电极30是采用整体导电材料的结构，在其他实施例中，也可以是采用复合层结构，即振膜电极30包括振动膜以及设于振动膜上的导电层。
振膜电极30上设有贯穿的通孔31，该通孔31为多个，并围绕振膜电极30的中间区域间隔设置，多个通孔31所围成的中间区域为振膜电极30的振动部，其形状可以为圆形、椭圆形或多边形。
如图3A至图3K所示，本发明还提供了一种电容式麦克风的制造方法，本实施例的制造方法具体步骤如下：
如图3A所示，步骤S101，提供一硅基板110，并在硅基板110上沉积第一牺牲层120。该第一牺牲层120的材料例如可以为氧化硅。
如图3B所示，步骤S102，在所述第一牺牲层120的边缘刻蚀形成有贯穿的第一凹槽121。
如图3C所示，步骤S103，在所述第一牺牲层120上沉积振膜电极层130，且沉积到所述第一凹槽121内的部分与所述硅基板110连接；该振膜电极层130的材料例如可以为多晶硅。
如图3D所示，步骤S104，在所述振膜电极层130上刻蚀多个通孔131从而形成振膜电极，所述多个通孔131围绕振膜电极的中间区域间隔设置从而形成所述振膜电极的振动部。
如图3E所示，步骤S105，在所述振膜电极层130上沉积第二牺牲层140，且沉积到所述多个通孔131的部分与所述第一牺牲层120连接；该第二牺牲层140的材料例如可以为氧化硅。
如图3F所示，步骤S106，在所述第一牺牲层120上依次沉积隔离层150以及背板电极层160；该隔离层150的材料例如可以为不掺杂多晶硅、氮化硅或碳化硅，该背板电极层160的材料例如可以为多晶硅。
如图3G所示，步骤S107，在所述背板电极层160、隔离层150以及第二牺牲层140的边缘部分刻蚀形成有贯穿的第二凹槽141。
如图3H所示，步骤S108，在背板电极层160上沉积背板层170，且沉积到所述第二凹槽141的部分与所述振膜电极层130连接，从而形成支撑部171；该背板层170的材料例如可以为氮化硅。
如图3I所示，步骤S109，在背板层170、背板电极层160以及隔离层150上贯穿的刻蚀有多个声孔172。
如图3J所示，步骤S110，在所述硅基板110底部刻蚀形成露出所述第一牺牲层120底面一部分的背腔111。
如图3K所示，步骤S111，通过湿刻蚀的方法去除第一牺牲层120和第二牺牲层140，从而在所述隔离层150与振膜电极层130之间形成声腔173，并使所述声孔172与所述声腔173连通，以及所述通孔131分别与所述声腔173和背腔111连通。
至此，提供了本发明实施例电容式麦克风的制造方法，本实施例方法生产的电容式麦克风制作工艺流程简单、工艺成本低、易于批量化生产。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (10)

  1. 一种电容式麦克风，包括具有背腔的基底、固定于所述基底上的背板、以及与所述背板相对间隔设置的振膜电极，所述背板朝向所述振膜电极的一侧设有背板电极，其特征在于，所述背板电极上设有隔离层。
  2. 根据权利要求1所述的电容式麦克风，其特征在于，所述电容式麦克风还包括设于所述背板和所述振膜电极之间的支撑部。
  3. 根据权利要求2所述的电容式麦克风，其特征在于，所述振膜电极贴于所述基底上，所述支撑部固定于所述振膜电极或所述基底上，所述背板通过所述支撑部固定支撑于所述基底。
  4. 根据权利要求3所述的电容式麦克风，其特征在于，所述背板与所述支撑部为一体成型结构。
  5. 根据权利要求3所述的电容式麦克风，其特征在于，所述支撑部为环形结构或多边框型结构并围绕所述振膜电极。
  6. 根据权利要求1所述的电容式麦克风，其特征在于，所述背板、背板电极以及隔离层上设有多个贯穿的声孔。
  7. 根据权利要求1所述的电容式麦克风，其特征在于，所述振膜电极上设有贯穿的通孔。
  8. 一种电容式麦克风的制造方法，其特征在于，包括如下步骤：
    提供一硅基板，并在硅基板上沉积第一牺牲层；
    在所述第一牺牲层的边缘刻蚀形成有贯穿的第一凹槽；
    在所述第一牺牲层上沉积振膜电极层，且沉积到所述第一凹槽内的部分与所述硅基板连接；
    在所述振膜电极层上刻蚀多个通孔从而形成振膜电极，所述多个通孔围绕振膜电极的中间区域间隔设置从而形成所述振膜电极的振动部；
    在所述振膜电极层上沉积第二牺牲层，且沉积到所述多个通孔的部分与所述第一牺牲层连接；
    在所述第一牺牲层上依次沉积隔离层以及背板电极层；
    将所述背板电极层、隔离层以及第二牺牲层的边缘部分刻蚀形成有贯穿的第二凹槽；
    在背板电极层上沉积背板层，且沉积到所述第二凹槽的部分与所述振膜电极层连接，从而形成支撑部；
    在背板层、背板电极层以及隔离层上贯穿的刻蚀有多个声孔；
    在所述硅基板底部刻蚀形成露出所述第一牺牲层底面一部分的背腔；
    去除第一牺牲层和第二牺牲层，从而在所述隔离层与振膜电极层之间形成声腔，并使所述声孔与所述声腔连通，以及所述通孔分别与所述声腔和背腔连通。
  9. 根据权利要求8所述的电容式麦克风的制造方法，其特征在于，所述振膜电极层和背板电极层的材料为多晶硅，所述背板层的材料为氮化硅，所述隔离层的材料为不掺杂多晶硅、氮化硅或碳化硅。
  10. 根据权利要求8所述的电容式麦克风的制造方法，其特征在于，所述第一牺牲层和第二牺牲层的材料为氧化硅，通过湿刻蚀的方法去除所述第一牺牲层和第二牺牲层。
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