WO2022042672A1 - 氮化镓基高电子迁移率晶体管外延片及其制备方法 - Google Patents

氮化镓基高电子迁移率晶体管外延片及其制备方法 Download PDF

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WO2022042672A1
WO2022042672A1 PCT/CN2021/114901 CN2021114901W WO2022042672A1 WO 2022042672 A1 WO2022042672 A1 WO 2022042672A1 CN 2021114901 W CN2021114901 W CN 2021114901W WO 2022042672 A1 WO2022042672 A1 WO 2022042672A1
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layer
sublayer
epitaxial wafer
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doping
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French (fr)
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苏晨
胡加辉
王慧
蒋媛媛
张武斌
李鹏
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华灿光电（浙江）有限公司
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Definitions

  • the present disclosure relates to the field of semiconductor technology, and in particular, to a gallium nitride-based high electron mobility transistor epitaxial wafer and a preparation method thereof.
  • GaN gallium nitride
  • HEMT High Electron Mobility Transistor, high electron mobility transistor
  • GaN gallium nitride
  • HEMT High Electron Mobility Transistor, high electron mobility transistor
  • a GaN-based HEMT typically includes a chip and source, drain, and gate electrodes located on the chip. Chips are obtained from epitaxial wafers.
  • the structure of the epitaxial wafer generally includes a substrate and a buffer layer, a high-resistance buffer layer, a channel layer, an AlGaN barrier layer and a P-type GaN cap layer sequentially stacked on the substrate.
  • the P-type GaN cap layer is mainly doped with Mg, but Mg doping has the problem of being easily passivated by H (hydrogen), resulting in a high activation energy.
  • H hydrogen
  • the ionization rate of Mg is very low, and a high doping concentration is required to achieve this.
  • P-type doping, and Mg as an acceptor can also form a complex MgGa-VN with N vacancies in GaN, resulting in a self-compensation effect and a decrease in carrier concentration.
  • the embodiments of the present disclosure provide a GaN-based high electron mobility transistor epitaxial wafer and a preparation method thereof, which can reduce the generation of complexes and the activation energy of the P-type dopant in the cap layer, thereby obtaining high doping concentration of P-type capping layer.
  • the technical solution is as follows:
  • At least one embodiment of the present disclosure provides a GaN-based high electron mobility transistor epitaxial wafer, including a substrate and a buffer layer, a high-resistance buffer layer, a channel layer, and an AlGaN barrier layer stacked on the substrate and cap layer,
  • the cap layer includes alternately grown first sublayers and second sublayers, the first sublayer is a GaN layer, the second sublayer is an InGaN layer, the first sublayer and the second sublayer
  • the layers are all doped with main doping elements, and the main doping elements are at least one of Be and Mg, and the second sublayer is also doped with auxiliary doping elements, and the auxiliary doping elements are At least one of O, Mg, Si and Zn.
  • the doping concentrations of the main doping elements in the first sublayer and the second sublayer are both in the range of 1*10 19 to 9*10 21 cm ⁇ 3 .
  • the doping concentration of the auxiliary doping element in the second sublayer ranges from 1*10 18 to 5*10 21 cm ⁇ 3 .
  • the ratio of the doping concentration of the main doping element to the auxiliary doping element in the second sublayer ranges from 1:1 to 5:1.
  • the range of the doping concentration of In in the second sublayer is 10 ⁇ 10 4 cm ⁇ 3 .
  • the cap layer includes a first sublayer and a second sublayer that are alternately grown in n periods, 1 ⁇ n ⁇ 10.
  • the total thickness of the cap layer ranges from 50 to 150 nm.
  • the thickness of the first sublayer ranges from 5 to 20 nm
  • the thickness of the second sublayer ranges from 10 to 30 nm.
  • At least one embodiment of the present disclosure provides a method for fabricating a GaN-based high electron mobility transistor epitaxial wafer, the fabrication method comprising:
  • a buffer layer growing a buffer layer, a high-resistance buffer layer, a channel layer, an AlGaN barrier layer and a cap layer in sequence on the substrate;
  • the cap layer includes alternately grown first sublayers and second sublayers, the first sublayer is a GaN layer, the second sublayer is an InGaN layer, the first sublayer and the second sublayer
  • the layers are all doped with main doping elements, and the main doping elements are at least one of Be and Mg, and the second sublayer is also doped with auxiliary doping elements, and the auxiliary doping elements are At least one of O, Mg, Si and Zn.
  • the sequential growth of a buffer layer, a high-resistance buffer layer, a channel layer, an AlGaN barrier layer and a cap layer on the substrate includes:
  • the cap layer is grown on the AlGaN barrier layer under the conditions of a growth temperature ranging from 800 to 1050° C. and a growth pressure ranging from 50 to 600 torr.
  • the preparation method also includes:
  • the epitaxial wafer is furnace annealed.
  • the annealing temperature ranges from 600 to 900° C.
  • the annealing time ranges from 5 to 10 minutes.
  • FIG. 1 is a schematic structural diagram of a GaN-based high electron mobility transistor epitaxial wafer provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic structural diagram of a cap layer provided by an embodiment of the present disclosure
  • FIG. 3 is a flowchart of a method for preparing a GaN-based high electron mobility transistor epitaxial wafer provided by an embodiment of the present disclosure
  • FIG. 4 is a flowchart of another method for fabricating a GaN-based high electron mobility transistor epitaxial wafer provided by an embodiment of the present disclosure.
  • GaN-based power electronic devices have attracted a lot of attention in recent years.
  • the GaN material can form a heterojunction structure with materials such as AlGaN and InGaN. Due to the spontaneous polarization and piezoelectric polarization effects of the barrier layer material, a high concentration of two-dimensional electron gas (2DEG) is formed at the interface of the heterojunction. Due to the advantages of GaN materials such as large band gap, high electron mobility, high electron saturation velocity and large breakdown field strength, GaN-based HEMTs (High Electron Mobility Transistor, high electron mobility transistors) have become popular in recent decades. Research hotspots in the field of microwave power and circuits are presented.
  • GaN-based HEMTs have many advantages, they also encounter many problems, one of which is that GaN-based HEMTs fabricated by conventional processes are all depletion mode (threshold voltage V th ⁇ 0V). Because the turn-off voltage is negative, depletion-mode HEMTs are much more complex to design than enhancement-mode (V th > 0V) HEMT circuits, which increases the cost of the HEMT circuit. Enhancement-mode HEMTs are an important component of high-speed switching, high-temperature GaN integrated circuits (RFICs), and microwave monolithic integrated circuits (MMICs). From the application point of view, the enhanced HEMT has incomparable advantages over the depleted HEMT.
  • RFICs high-temperature GaN integrated circuits
  • MMICs microwave monolithic integrated circuits
  • enhanced HEMTs do not require negative voltage, reducing circuit complexity, size and cost; in the field of high-power switches, enhanced HEMTs can improve circuit safety. Therefore, it is necessary to carry out research on enhancement mode GaN-based HEMT devices.
  • FIG. 1 is a schematic structural diagram of a GaN-based high electron mobility transistor epitaxial wafer provided by an embodiment of the present disclosure.
  • the GaN-based high electron mobility transistor epitaxial wafer includes a substrate 1 and a stack Buffer layer 2 , high resistance buffer layer 3 , channel layer 4 , AlGaN barrier layer 5 and cap layer 6 on substrate 1 .
  • FIG. 2 is a schematic structural diagram of a capping layer provided by an embodiment of the present disclosure.
  • the capping layer 6 includes a first sublayer 61 and a second sublayer 62 grown alternately.
  • the first sublayer 61 is a GaN layer
  • the second sublayer 62 is an InGaN layer.
  • the first sublayer 61 and the second sublayer 62 are both doped with a main doping element, and the main doping element is at least one of Be and Mg.
  • the second sublayer 62 is also doped with auxiliary doping elements, and the auxiliary doping elements are at least one of O, Mg, Si and Zn.
  • the main doping element is one of Be and Mg
  • the auxiliary doping element is one of O, Mg, Si and Zn.
  • the cap layer is set as a structure in which the first sublayer and the second sublayer are alternately grown, wherein the first sublayer is a GaN layer, the second sublayer is an InGaN layer, and the first sublayer and the second sublayer are alternately grown.
  • the layers are all doped with at least one of Be and Mg, and at least one of Be and Mg is a P-type dopant. Since In is an impurity, too much introduction will affect the crystal quality of the epitaxial wafer. Therefore, by intermittently introducing a small amount of In during the growth of the GaN cap layer, alternating first sublayers and second sublayers are formed, in which the first sublayer and the second sublayer are alternately formed.
  • a sub-layer is formed when no In is introduced, and the second sub-layer is formed when In is introduced, which can reduce the influence of In impurities on the crystal quality of the epitaxial wafer.
  • In can inhibit the incorporation of Ga atoms, thereby increasing the effective V/III ratio on the surface of the cap layer, thereby inhibiting the formation of N vacancies, preventing the doped Mg or Be in the cap layer from forming complexes with N vacancies, resulting in The self-compensating effect ensures the effective carrier concentration.
  • Mg or Be acts as the acceptor.
  • the auxiliary doping element O or Si doped in the second sublayer can be used as the donor impurity to reduce the activation energy of the acceptor, thereby increasing the P-type dopant in the cap layer. effective doping concentration.
  • the auxiliary doping element Mg or Zn doped in the second sublayer can be used as an acceptor to further increase the doping concentration of the P-type dopant in the cap layer, and finally obtain a P-type cap layer with a high doping concentration .
  • the second sub-layer 62 is commonly doped with two elements such as Be-Mg, Be-O, Be-Si, Mg-O, Mg-Si, Mg-Zn, and the like.
  • the former is the main doping element, and the latter is the auxiliary doping element.
  • the doping concentrations of the main doping elements in the first sublayer 61 and the second sublayer 62 are both in the range of 1*10 19 to 9*10 21 cm ⁇ 3 .
  • the doping concentration of the main doping element is too low, the acceptor doping concentration will be too low, so that the cap layer cannot be P-type in the end. If the doping concentration of the main doping element is too high, the carrier scattering will be enhanced, and the carrier mobility will be significantly reduced. By setting the doping concentration of the main doping element within the above range, it can not only ensure that the cap layer is P-type in the end, but also improve the carrier mobility.
  • the doping concentrations of the main doping elements in the first sublayer 61 and the second sublayer 62 are both in the range of 1*10 19 to 5*10 20 cm ⁇ 3 .
  • the doping concentration of the auxiliary doping element in the second sublayer 62 ranges from 1*10 18 to 5*10 21 cm ⁇ 3 .
  • the doping concentration of the auxiliary doping element is too low, the effect of reducing the activation energy of the acceptor and increasing the effective doping concentration of the P-type dopant in the cap layer cannot be achieved. If the doping concentration of the auxiliary doping element is too high, the doping concentration of the donor will not only be too high, so that the cap layer cannot be P-type in the end, but also the defects of the epitaxial wafer will be increased, and the crystal quality will be deteriorated.
  • the doping concentration of the auxiliary doping element within the above range, the effective doping concentration of the P-type dopant in the cap layer can be increased, the defects of the epitaxial wafer can be reduced, and the crystal quality can be improved.
  • the doping concentration of the auxiliary doping element in the second sublayer 62 ranges from 1*10 18 to 3*10 20 cm ⁇ 3 .
  • the ratio of the doping concentration of the main doping element to the auxiliary doping element in the second sublayer 62 ranges from 1:1 to 5:1.
  • the ratio of the doping concentration of the main doping element and the auxiliary doping element is less than 1:1, the ratio of the main doping element is too small, and the doping concentration of the acceptor is too low, so that the cap layer cannot be P-type in the end. If the ratio of the doping concentration of the main doping element and the auxiliary doping element is greater than 5:1, the doping concentration of the donor impurity in the auxiliary doping element is low, and it cannot reduce the activation energy of the acceptor and increase the cap. The effect of the doping concentration of the P-type dopant in the layer.
  • the ratio of the doping concentration of the main doping element to the auxiliary doping element within the above-mentioned range, it can not only ensure that the cap layer is finally P-type, but also increase the effective doping concentration of the P-type dopant in the cap layer.
  • the ratio of the doping concentration of the main doping element to the auxiliary doping element in the second sublayer 62 is 2:1 or 3:1.
  • the doping concentration of In in the second sublayer 62 is in the range of 10 ⁇ 10 4 cm ⁇ 3 .
  • the doping concentration of In is too high, the quality of the epitaxial wafer will be deteriorated. If the doping concentration of In is too low, the incorporation of Ga atoms cannot be suppressed, and the effective V/III ratio on the surface of the cap layer will be increased, thereby suppressing the N
  • the formation of vacancies prevents the doped Mg or Be in the cap layer from forming complexes with N vacancies, resulting in a self-compensating effect.
  • the doping concentration of In in the second sublayer 62 within the above range, the quality of the epitaxial wafer can be ensured, and the Mg or Be doped in the cap layer can be prevented from forming complexes with N vacancies, thereby ensuring effective loading Current concentration.
  • the doping concentration of In in the second sublayer 62 ranges from 10 2 to 10 3 cm ⁇ 3 .
  • the cap layer 6 includes a first sublayer 61 and a second sublayer 62 that are alternately grown in n cycles.
  • the thickness of the cap layer 6 is in the range of 50 nm to 150 nm.
  • the thickness of the cap layer 6 is less than 50 nm, the effect of realizing a GaN-based enhancement type high electron mobility transistor device cannot be achieved. If the thickness of the cap layer 6 is greater than 150 nm, the two-dimensional electron gas concentration at the interface of the GaN/AlGaN heterojunction will be affected due to the excessive thickness of the cap layer. By setting the thickness of the cap layer 6 within the above range, the function of the GaN-based enhancement mode high electron mobility transistor device can be realized, and the two-dimensional electron gas concentration at the GaN/AlGaN heterojunction interface can be ensured.
  • the thickness of the cap layer 6 is in the range of 100 nm.
  • the buffer layer 2 is an AlN/AlGaN layer, wherein the thickness of the AlN layer ranges from 100 to 300 nm, and the thickness of the AlGaN layer ranges from 0.5 to 1.5 um.
  • the high-resistance buffer layer 3 is an AlxGa1 - xN /GaN superlattice structure, 0 ⁇ x ⁇ 1.
  • the thickness of the AlxGa1 -xN is in the range of 5 to 20 nm
  • the thickness of the GaN layer is in the range of 10 to 30 nm.
  • the high-resistance buffer layer 3 can achieve the beneficial effect of dislocation filtering and improve the crystal quality of the epitaxial wafer.
  • the channel layer 4 is a GaN layer with a thickness ranging from 50 to 300 nm.
  • the channel layer 4 is a transport channel for the two-dimensional electron gas, and requires a flat surface and a small doping concentration to reduce the scattering of the two-dimensional electron gas.
  • the GaN-based high electron mobility transistor epitaxial wafer further includes an AlN insertion layer 7 disposed between the channel layer 4 and the AlGaN barrier layer 5, and the thickness of the AlN insertion layer 7 ranges from 0.2 to 2 nm. .
  • the AlN insertion layer 7 By setting the AlN insertion layer 7, the polarization effect of the interface can be increased, and the scattering of the interface can be reduced at the same time, and the concentration and mobility of the two-dimensional electron gas can be significantly improved.
  • the thickness of the AlGaN barrier layer 5 ranges from 30 to 100 nm.
  • the AlGaN barrier layer 5 generates a large amount of positive polarization charges at the interface between the barrier layer 5 and the channel layer 4 through its large white hair polarization or piezoelectric polarization. The electrons are attracted to form a two-dimensional electron gas.
  • FIG. 3 is a flowchart of a method for preparing a GaN-based high electron mobility transistor epitaxial wafer provided by an embodiment of the present disclosure. As shown in FIG. 3 , the preparation method includes:
  • Step 301 providing a substrate.
  • Step 302 growing a buffer layer, a high-resistance buffer layer, a channel layer, an AlGaN barrier layer and a cap layer in sequence on the substrate.
  • the cap layer includes alternately grown first sublayers and second sublayers.
  • the first sublayer is a GaN layer
  • the second sublayer is an InGaN layer.
  • Both the first sublayer and the second sublayer are doped with main doping elements, and the main doping elements are at least one of Be and Mg.
  • the second sublayer is also doped with auxiliary doping elements, and the auxiliary doping elements are at least one of O, Mg, Si and Zn.
  • the cap layer is set as a structure in which the first sublayer and the second sublayer are alternately grown, wherein the first sublayer is a GaN layer, the second sublayer is an InGaN layer, and the first sublayer and the second sublayer are alternately grown.
  • the layers are all doped with at least one of Be and Mg, and at least one of Be and Mg is a P-type dopant. Since In is an impurity, too much introduction will affect the crystal quality of the epitaxial wafer. Therefore, by intermittently introducing a small amount of In during the growth of the GaN cap layer, alternating first sublayers and second sublayers are formed, in which the first sublayer and the second sublayer are alternately formed.
  • a sub-layer is formed when no In is introduced, and the second sub-layer is formed when In is introduced, which can reduce the influence of In impurities on the crystal quality of the epitaxial wafer.
  • In can inhibit the incorporation of Ga atoms, thereby increasing the effective V/III ratio on the surface of the cap layer, thereby inhibiting the formation of N vacancies, preventing the doped Mg or Be in the cap layer from forming complexes with N vacancies, resulting in The self-compensating effect ensures the effective carrier concentration.
  • Mg or Be acts as the acceptor.
  • the auxiliary doping element O or Si doped in the second sublayer can be used as the donor impurity to reduce the activation energy of the acceptor, thereby increasing the P-type dopant in the cap layer. effective doping concentration.
  • the auxiliary doping element Mg or Zn doped in the second sublayer can be used as an acceptor to further increase the doping concentration of the P-type dopant in the cap layer, and finally obtain a P-type cap layer with a high doping concentration .
  • FIG. 4 is a flowchart of another method for preparing a GaN-based high electron mobility transistor epitaxial wafer provided by an embodiment of the present disclosure. As shown in FIG. 4 , the preparation method includes:
  • Step 401 providing a substrate.
  • the substrate may be a sapphire, Si or SiC substrate.
  • MOCVD Metal organic Chemical Vapor Deposition, metal organic compound chemical vapor deposition method
  • MOCVD Metal organic Chemical Vapor Deposition, metal organic compound chemical vapor deposition method
  • high-purity NH3 is used as the N source
  • trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium source
  • trimethylaluminum (TMAl) is used as the aluminum source.
  • step 401 may further include:
  • the substrate is subjected to a high temperature H 2 annealing treatment.
  • the annealing treatment method includes: treating the substrate at a high temperature for 5-6 minutes under the atmosphere of hydrogen (as a carrier gas) in the reaction chamber of the MOCVD equipment.
  • the temperature of the reaction chamber is in the range of 1000 to 1100° C.
  • the pressure of the reaction chamber is controlled at 200 to 500 torr.
  • Step 402 growing a buffer layer on the substrate.
  • the buffer layer is an AlN/AlGaN layer.
  • the temperature range is 600-900 °C, and the reaction chamber pressure is 25-200 torr, TMAl is introduced as the group III source, NH3 is used as the group V source, and V/III
  • TMAl is introduced as the group III source
  • NH3 is used as the group V source
  • V/III The range of the ratio is 100 to 2000
  • the AlN layer with the thickness in the range of 100 to 300 nm is grown.
  • the temperature range is 950-1050°C, and the reaction chamber pressure is 25-200torr, TMAl/TMGa is fed as the group III source, NH3 is used as the group V source, and The V/III ratio is in the range of 100 to 2000, and the AlGaN layer with the growth thickness in the range of 0.5 to 1.5 ⁇ m is grown.
  • Step 403 growing a high-resistance buffer layer on the buffer layer.
  • the high-resistance buffer layer is an AlxGa1 - xN /GaN superlattice structure, 0 ⁇ x ⁇ l.
  • the temperature range is 950-1050°C
  • the reaction chamber pressure is 25-200torr
  • TMAl/TMGa is fed as the group III source
  • NH3 is used as the group V source
  • the V/III ratio is in the range of 100 to 2000
  • the AlxGa1 - xN layer with the thickness in the range of 5 to 20 nm is grown.
  • TMGa was introduced as group III source
  • NH3 was used as group V source
  • the range of V/III ratio was taken. is 100 to 2000
  • a GaN layer with a thickness in the range of 10 to 30 nm is grown.
  • Step 404 growing a channel layer on the high-resistance buffer layer.
  • TMGa is passed as the group III source
  • NH 3 is used as the group V source
  • the range of the V/III ratio is 5,000 to 10,000
  • the GaN channel layer with the thickness in the range of 50 to 300 nm is grown.
  • Step 405 growing an AlN insertion layer on the channel layer.
  • the temperature range is 800 °C ⁇ 1050 °C, and the reaction chamber pressure is 50 ⁇ 200torr, pass TMAl as the III group source, NH 3 as the V group source, take V
  • the /III ratio is in the range of 100 to 2000, and the AlN insertion layer is grown in the range of 0.2 to 2 nm in thickness.
  • Step 406 growing an AlGaN barrier layer on the AlN insertion layer.
  • TMGa and TMAl are introduced as a group III source, and NH3 is used as a group V source,
  • the range of the V/III ratio is taken as 5000-10000, and the AlGaN barrier layer with the thickness in the range of 30-100 nm is grown.
  • Step 407 growing a cap layer on the AlGaN barrier layer.
  • the cap layer includes alternately grown first sublayers and second sublayers.
  • the first sublayer is a GaN layer
  • the second sublayer is an InGaN layer.
  • Both the first sublayer and the second sublayer are doped with a main doping element, and the main doping element is at least one of Be and Mg.
  • the second sublayer is also doped with auxiliary doping elements, and the auxiliary doping elements are at least one of O, Mg, Si and Zn.
  • the second sub-layer is jointly doped with two elements, such as Be-Mg, Be-O, Be-Si, Mg-O, Mg-Si, Mg-Zn, and the like.
  • the former is the main doping element
  • the latter is the auxiliary doping element.
  • the doping concentrations of the main doping elements in the first sublayer and the second sublayer both range from 1*10 19 to 9*10 21 cm ⁇ 3 .
  • the doping concentration of the main doping element is too low, the acceptor doping concentration will be too low, so that the cap layer cannot be P-type in the end. If the doping concentration of the main doping element is too high, the carrier scattering will be enhanced, and the carrier mobility will be significantly reduced.
  • the doping concentration of the auxiliary doping element in the second sublayer ranges from 1*10 18 to 5*10 21 cm ⁇ 3 .
  • the doping concentration of the auxiliary doping element is too low, the effect of reducing the activation energy of the acceptor and increasing the effective doping concentration of the P-type dopant in the cap layer cannot be achieved. If the doping concentration of the auxiliary doping element is too high, the doping concentration of the donor will not only be too high, so that the cap layer cannot be P-type in the end, but also the defects of the epitaxial wafer will be increased, and the crystal quality will be deteriorated.
  • the ratio of the doping concentration of the main doping element to the auxiliary doping element in the second sublayer ranges from 1:1 to 5:1.
  • the ratio of the doping concentration of the main doping element and the auxiliary doping element is less than 1:1, the ratio of the main doping element is too small, and the doping concentration of the acceptor is too low, so that the cap layer cannot be P-type in the end. If the ratio of the doping concentration of the main doping element and the auxiliary doping element is greater than 5:1, the doping concentration of the donor impurity in the auxiliary doping element is low, and it cannot reduce the activation energy of the acceptor and increase the cap. The effect of the doping concentration of the P-type dopant in the layer.
  • the range of the doping concentration of In in the second sublayer is 10 ⁇ 10 4 cm ⁇ 3 .
  • the doping concentration of In is too high, the quality of the epitaxial wafer will be deteriorated. If the doping concentration of In is too low, the incorporation of Ga atoms cannot be suppressed, and the effective V/III ratio on the surface of the cap layer will be increased, thereby suppressing the N The formation of vacancies prevents the doped Mg or Be in the cap layer from forming complexes with N vacancies, resulting in a self-compensating effect.
  • the cap layer includes a first sublayer and a second sublayer that are alternately grown in n periods.
  • the thickness of the cap layer ranges from 50 nm to 150 nm.
  • the thickness of the cap layer is less than 50 nm, the effect of realizing a GaN-based enhancement mode high electron mobility transistor device cannot be achieved. If the thickness of the cap layer is greater than 150 nm, the two-dimensional electron gas concentration at the interface of the GaN/AlGaN heterojunction will be affected due to the excessive thickness of the cap layer.
  • the thickness of the capping layer is in the range of 100 nm.
  • step 407 may include:
  • TMGa was introduced as a group III source
  • NH 3 was used as a group V source
  • V/III The range of the ratio is 100-5000, and the cap layer with the thickness in the range of 50-150 nm is grown.
  • reaction chamber pressure ranges from 50 to 300 torr when the cap layer is grown.
  • Step 408 annealing the epitaxial wafer in a furnace.
  • the temperature in the reaction chamber of the MOCVD equipment is lowered, and the annealing treatment is performed in a nitrogen atmosphere. At room temperature, the epitaxial growth is completed.
  • the decomposition of the complex in the cap layer can be enhanced by annealing the epitaxial wafer, which is beneficial to the activation of the Mg acceptor originally passivated by H, and provides carriers for the P-type conductance.
  • the cap layer is set as a structure in which the first sublayer and the second sublayer are alternately grown, wherein the first sublayer is a GaN layer, the second sublayer is an InGaN layer, and the first sublayer and the second sublayer are alternately grown.
  • the layers are all doped with at least one of Be and Mg, and at least one of Be and Mg is a P-type dopant. Since In is an impurity, too much introduction will affect the crystal quality of the epitaxial wafer. Therefore, by intermittently introducing a small amount of In during the growth of the GaN cap layer, alternating first sublayers and second sublayers are formed, in which the first sublayer and the second sublayer are alternately formed.
  • a sub-layer is formed when no In is introduced, and the second sub-layer is formed when In is introduced, which can reduce the influence of In impurities on the crystal quality of the epitaxial wafer.
  • In can inhibit the incorporation of Ga atoms, thereby increasing the effective V/III ratio on the surface of the cap layer, thereby inhibiting the formation of N vacancies, preventing the doped Mg or Be in the cap layer from forming complexes with N vacancies, resulting in The self-compensating effect ensures the effective carrier concentration.
  • Mg or Be acts as the acceptor.
  • the auxiliary doping element O or Si doped in the second sublayer can be used as the donor impurity to reduce the activation energy of the acceptor, thereby increasing the P-type dopant in the cap layer. effective doping concentration.
  • the auxiliary doping element Mg or Zn doped in the second sublayer can be used as an acceptor to further increase the doping concentration of the P-type dopant in the cap layer, and finally obtain a P-type cap layer with a high doping concentration .

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Abstract

本公开提供了一种氮化镓基高电子迁移率晶体管外延片及其制备方法，属于半导体技术领域。所述氮化镓基高电子迁移率晶体管外延片包括衬底以及层叠在所述衬底上的缓冲层、高阻缓冲层、沟道层、AlGaN势垒层和帽层，所述帽层包括交替生长的第一子层和第二子层，所述第一子层为GaN层，所述第二子层为InGaN层，所述第一子层和所述第二子层中均掺杂有主掺杂元素，所述主掺杂元素为Be和Mg中的至少一种，所述第二子层中还掺杂有辅助掺杂元素，所述辅助掺杂元素为O、Mg、Si和Zn中的至少一种。

Description

氮化镓基高电子迁移率晶体管外延片及其制备方法
本公开要求于2020年8月28日提交的申请号为202010883958.5、发明名称为“氮化镓基高电子迁移率晶体管外延片及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及半导体技术领域，特别涉及一种氮化镓基高电子迁移率晶体管外延片及其制备方法。
背景技术
GaN(氮化镓)基HEMT(High Electron Mobility Transistor，高电子迁移率晶体管)具有高的电流密度、临界击穿电压和电子迁移率，在微波功率和高温电子器件领域具有十分重要的应用价值。
氮化镓基HEMT通常包括芯片和位于芯片上的源极、漏极和栅极。芯片由外延片得到。外延片的结构一般包括衬底和依次层叠在衬底上的缓冲层、高阻缓冲层、沟道层、AlGaN势垒层以及P型GaN帽层。
P型GaN帽层主要采用的是Mg掺杂，但掺Mg存在易被H(氢)钝化导致激活能较高的问题，Mg的离化率很低，需要较高的掺杂浓度才能实现P型掺杂，且Mg作为受主还会与GaN中的N空位形成络合物MgGa-VN，产生自补偿效应，造成载流子浓度降低。
发明内容
本公开实施例提供了一种氮化镓基高电子迁移率晶体管外延片及其制备方法，可以减少络合物的产生，降低帽层中P型掺杂剂的激活能，从而获得高掺杂浓度的P型帽层。所述技术方案如下：
本公开至少一实施例提供了一种氮化镓基高电子迁移率晶体管外延片，包括衬底以及层叠在所述衬底上的缓冲层、高阻缓冲层、沟道层、AlGaN势垒层和帽层，
所述帽层包括交替生长的第一子层和第二子层，所述第一子层为GaN层， 所述第二子层为InGaN层，所述第一子层和所述第二子层中均掺杂有主掺杂元素，所述主掺杂元素为Be和Mg中的至少一种，所述第二子层中还掺杂有辅助掺杂元素，所述辅助掺杂元素为O、Mg、Si和Zn中的至少一种。
可选地，所述第一子层和所述第二子层中的所述主掺杂元素的掺杂浓度均的范围为1*10 19～9*10 21cm -3。
可选地，所述第二子层中的所述辅助掺杂元素的掺杂浓度的范围为1*10 18～5*10 21cm -3。
可选地，所述第二子层中的所述主掺杂元素和所述辅助掺杂元素的掺杂浓度的比值的范围为1：1～5：1。
可选地，所述第二子层中的In的掺杂浓度的范围为10～10 4cm -3。
可选地，所述帽层包括n个周期交替生长的第一子层和第二子层，1≤n≤10。
可选地，所述帽层的总厚度的范围为50～150nm。
可选地，所述第一子层的厚度的范围为5～20nm，所述第二子层的厚度的范围为10～30nm。
本公开至少一实施例提供了一种氮化镓基高电子迁移率晶体管外延片的制备方法，所述制备方法包括：
提供一衬底；
在所述衬底上依次生长缓冲层、高阻缓冲层、沟道层、AlGaN势垒层和帽层；
所述帽层包括交替生长的第一子层和第二子层，所述第一子层为GaN层，所述第二子层为InGaN层，所述第一子层和所述第二子层中均掺杂有主掺杂元素，所述主掺杂元素为Be和Mg中的至少一种，所述第二子层中还掺杂有辅助掺杂元素，所述辅助掺杂元素为O、Mg、Si和Zn中的至少一种。
可选地，所述在所述衬底上依次生长缓冲层、高阻缓冲层、沟道层、AlGaN势垒层和帽层，包括：
在生长温度的范围为800～1050℃、生长压力的范围为50～600torr的条件下，在所述AlGaN势垒层上生长所述帽层。
可选地，所述制备方法还包括：
在生长完所述帽层后，将所述外延片进行炉内退火。
可选地，退火温度的范围为600～900℃，退火时间的范围为5～10min。
附图说明
图1是本公开实施例提供的一种氮化镓基高电子迁移率晶体管外延片的结构示意图；
图2是本公开实施例提供的一种帽层的结构示意图；
图3是本公开实施例提供的一种氮化镓基高电子迁移率晶体管外延片的制备方法流程图；
图4是本公开实施例提供的另一种氮化镓基高电子迁移率晶体管外延片的制备方法流程图。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚，下面将结合附图对本公开实施方式作进一步地详细描述。
近些年来氮化镓基电力电子器件吸引了许多人的注意。GaN材料可与铝镓氮、铟镓氮等材料形成异质结结构。由于势垒层材料存在自发极化和压电极化效应，因此在异质结界面处会形成高浓度的二维电子气(2DEG)。由于GaN材料具有大禁带宽度、高电子迁移率、高电子饱和速度和大击穿场强等优点，氮化镓基HEMT(High Electron Mobility Transistor，高电子迁移率晶体管)在最近十几年成了微波功率领域及电路领域的研究热点。
尽管氮化镓基HEMT具有许多优点，但也遇到了很多问题，其中之一就是常规工艺制作的氮化镓基HEMT均为耗尽型(阈值电压V th＜0V)。因为关断电压为负压，耗尽型HEMT比增强型(V th＞0V)HEMT电路设计要复杂得多，这增加了HEMT电路的成本。增强型HEMT是高速开关、高温GaN集成电路(RFIC)和微波单片集成电路(MMIC)的一个重要组成部分。从应用的角度来说，增强型HEMT有着耗尽型HEMT无法比拟的优势。在微波功率放大器和低噪音功率放大器领域，增强型HEMT不需要负电压，降低了电路的复杂性、尺寸和成本；在高功率开关领域，增强型HEMT能够提高电路的安全性。因此有必要开展增强型氮化镓基HEMT器件的研究。
图1是本公开实施例提供的一种氮化镓基高电子迁移率晶体管外延片的结构示意图，如图1所示，该氮化镓基高电子迁移率晶体管外延片包括衬底1以 及层叠在衬底1上的缓冲层2、高阻缓冲层3、沟道层4、AlGaN势垒层5和帽层6。
图2是本公开实施例提供的一种帽层的结构示意图，如图2所示，帽层6包括交替生长的第一子层61和第二子层62。第一子层61为GaN层，第二子层62为InGaN层。第一子层61和第二子层62中均掺杂有主掺杂元素，主掺杂元素为Be和Mg中的至少一种。第二子层62中还掺杂有辅助掺杂元素，辅助掺杂元素为O、Mg、Si和Zn中的至少一种。
示例性地，主掺杂元素为Be和Mg中的一种，辅助掺杂元素为O、Mg、Si和Zn中的一种。
本公开实施例通过将帽层设置为第一子层和第二子层交替生长的结构，其中，第一子层为GaN层，第二子层为InGaN层，第一子层和第二子层中均掺有Be和Mg中的至少一种，Be和Mg中的至少一种为P型掺杂剂。由于In为杂质，通入过多会影响外延片的晶体质量，因此，通过在GaN帽层生长时间歇性的通入少量In，从而形成交替的第一子层和第二子层，其中第一子层在没有In通入的时候形成，第二子层在有In通入的时候形成，可以减少In杂质对外延片晶体质量的影响。In可以抑制Ga原子的并入，从而可以增大帽层表面的有效V/III比，进而可以抑制N空位的形成，防止帽层中掺杂的Mg或Be与N空位形成络合物，产生自补偿效应，保证了有效载流子浓度。同时，Mg或Be作为受主，一方面，第二子层中掺杂的辅助掺杂元素O或Si等可以作为施主杂质，降低受主的激活能，从而提高帽层中P型掺杂剂的有效掺杂浓度。另一方面，第二子层中掺杂的辅助掺杂元素Mg或Zn可以作为受主，进一步提高帽层中P型掺杂剂的掺杂浓度，最终得到高掺杂浓度的P型帽层。
在本公开实施例中，第二子层62中共同掺有例如Be-Mg、Be-O、Be-Si、Mg-O、Mg-Si、Mg-Zn等两种元素。其中，前一个为主掺杂元素，后一个为辅助掺杂元素。
可选地，第一子层61和第二子层62中主掺杂元素的掺杂浓度均的范围为1*10 19～9*10 21cm -3。
若主掺杂元素的掺杂浓度过低，会导致受主掺杂浓度偏低，使得帽层最终无法呈P型。若主掺杂元素的掺杂浓度过高，又会导致载流子散射加强，显著降低载流子迁移率。通过将主掺杂元素的掺杂浓度设置在上述范围内，既可以保证帽层最终呈P型，又能提高载流子迁移率。
示例性地，第一子层61和第二子层62中主掺杂元素的掺杂浓度均的范围为1*10 19～5*10 20cm -3。
可选地，第二子层62中的辅助掺杂元素的掺杂浓度的范围为1*10 18～5*10 21cm -3。
若辅助掺杂元素的掺杂浓度过低，则不能起到降低受主的激活能，提高帽层中P型掺杂剂的有效掺杂浓度的作用。若辅助掺杂元素的掺杂浓度过高，不仅会使得施主掺杂浓度偏高，导致帽层最终无法呈P型，同时还会使得外延片的缺陷增加，晶体质量变差。通过将辅助掺杂元素的掺杂浓度设置在上述范围内，既可以提高帽层中P型掺杂剂的有效掺杂浓度，又能减小外延片的缺陷，提高晶体质量。
示例性地，第二子层62中的辅助掺杂元素的掺杂浓度的范围为1*10 18～3*10 20cm -3。
可选地，第二子层62中的主掺杂元素和辅助掺杂元素的掺杂浓度的比值的范围为1：1～5：1。
若主掺杂元素和辅助掺杂元素的掺杂浓度的比值的范围小于1：1，则主掺杂元素比例过少，受主掺杂浓度偏低，会导致帽层最终无法呈P型。若主掺杂元素和辅助掺杂元素的掺杂浓度得比值大于5：1，则辅助参杂元素中的施主杂质的掺杂浓度偏低，又无法起到降低受主的激活能，提高帽层中P型掺杂剂的掺杂浓度的作用。通过将主掺杂元素和辅助掺杂元素的掺杂浓度的比值设置在上述范围内，既可以保证帽层最终呈P型，又能提高帽层中P型掺杂剂的有效掺杂浓度。
示例性地，第二子层62中的主掺杂元素和辅助掺杂元素的掺杂浓度的比值为2:1或3:1。
可选地，第二子层62中In的掺杂浓度的范围为10～10 4cm -3。
若In的掺杂浓度过高会导致外延片质量变差，若In的掺杂浓度过低则起不到抑制Ga原子的并入，增大帽层表面的有效V/III比，进而抑制N空位的形成，防止帽层中掺杂的Mg或Be与N空位形成络合物，产生自补偿效应的作用。通过将第二子层62中In的掺杂浓度设置在上述范围内，既可以保证外延片质量，又能防止帽层中掺杂的Mg或Be与N空位形成络合物，保证了有效载流子浓度。
示例性地，第二子层62中In的掺杂浓度的范围为10 2～10 3cm -3。
可选地，帽层6包括n个周期交替生长的第一子层61和第二子层62。帽层 6的厚度的范围为50nm～150nm。
若帽层6的厚度小于50nm，则起不到实现GaN基增强型高电子迁移率晶体管器件的作用。若帽层6的厚度大于150nm，则会由于帽层的过厚而影响GaN/AlGaN异质结界面二维电子气浓度。通过将帽层6的厚度设置在上述范围内，既可以实现GaN基增强型高电子迁移率晶体管器件的作用，又能保证GaN/AlGaN异质结界面二维电子气浓度。
示例性地，帽层6的厚度的范围为100nm。
可选地，缓冲层2为AlN/AlGaN层，其中，AlN层的厚度的范围为100～300nm，AlGaN层的厚度的范围为0.5～1.5um。
可选地，高阻缓冲层3为Al xGa 1-xN/GaN超晶格结构，0<x<l。其中，Al xGa 1-xN的厚度的范围为5～20nm，GaN层的厚度的范围为10～30nm。高阻缓冲层3可以实现位错过滤的有益效果，提升外延片的晶体质量。
可选地，沟道层4为GaN层，厚度的范围为50～300nm。该沟道层4为二维电子气的输运通道，要求表面平整并且掺杂浓度很小，以减小对二维电子气的散射。
可选地，该氮化镓基高电子迁移率晶体管外延片还包括设置在沟道层4和AlGaN势垒层5之间的AlN插入层7，AlN插入层7的厚度的范围为0.2～2nm。通过设置AlN插入层7可以增加界面的极化效应，同时降低界面的散射，显著提高二维电子气浓度和迁移率。
可选地，AlGaN势垒层5的厚度的范围为30～100nm。AlGaN势垒层5通过本身较大的白发极化或者压电极化作用，会在势垒层5与沟道层4的界面处产生大量的正的极化电荷，该极化正电荷可以吸引电子，从而形成二维电子气。
图3是本公开实施例提供的一种氮化镓基高电子迁移率晶体管外延片的制备方法流程图，如图3所示，该制备方法包括：
步骤301、提供一衬底。
步骤302、在衬底上依次生长缓冲层、高阻缓冲层、沟道层、AlGaN势垒层和帽层。
其中，帽层包括交替生长的第一子层和第二子层。第一子层为GaN层，第二子层为InGaN层。第一子层和第二子层中均掺杂有主掺杂元素，主掺杂元素为Be和Mg中的至少一种。第二子层中还掺杂有辅助掺杂元素，辅助掺杂元素 为O、Mg、Si和Zn中的至少一种。
本公开实施例通过将帽层设置为第一子层和第二子层交替生长的结构，其中，第一子层为GaN层，第二子层为InGaN层，第一子层和第二子层中均掺有Be和Mg中的至少一种，Be和Mg中的至少一种为P型掺杂剂。由于In为杂质，通入过多会影响外延片的晶体质量，因此，通过在GaN帽层生长时间歇性的通入少量In，从而形成交替的第一子层和第二子层，其中第一子层在没有In通入的时候形成，第二子层在有In通入的时候形成，可以减少In杂质对外延片晶体质量的影响。In可以抑制Ga原子的并入，从而可以增大帽层表面的有效V/III比，进而可以抑制N空位的形成，防止帽层中掺杂的Mg或Be与N空位形成络合物，产生自补偿效应，保证了有效载流子浓度。同时，Mg或Be作为受主，一方面，第二子层中掺杂的辅助掺杂元素O或Si等可以作为施主杂质，降低受主的激活能，从而提高帽层中P型掺杂剂的有效掺杂浓度。另一方面，第二子层中掺杂的辅助掺杂元素Mg或Zn可以作为受主，进一步提高帽层中P型掺杂剂的掺杂浓度，最终得到高掺杂浓度的P型帽层。
图4是本公开实施例提供的另一种氮化镓基高电子迁移率晶体管外延片的制备方法流程图，如图4所示，该制备方法包括：
步骤401、提供一衬底。
示例性地，衬底可以是蓝宝石、Si或SiC衬底。
需要说明的是，在本公开实施例中，可以采用MOCVD(Metal organic Chemic alVapor Deposition，金属有机化合物化学气相沉淀方法)在衬底上依次生长缓冲层、高阻缓冲层、沟道层、AlN插入层、AlGaN势垒层和帽层。生长过程中控制的温度和压力实际上是指MOCVD设备的反应室内的温度和压力。
示例性地，采用高纯NH 3作为N源，三甲基镓(TMGa)及三乙基镓(TEGa)作为镓源，三甲基铝(TMAl)作为铝源。
示例性地，步骤401还可以包括：
对衬底进行高温H 2化退火处理。
退火处理方式包括：在MOCVD设备的反应室内为氢气(作为载气)气氛下，高温处理衬底5～6min。其中，反应室温度的范围为1000～1100℃，反应室压力控制在200～500torr。
步骤402、在衬底上生长缓冲层。
其中，缓冲层为AlN/AlGaN层。
示例性地，在纯H 2气氛、温度的范围为600～900℃、反应室压力的范围为25～200torr的条件下，通入TMAl作为III族源，NH3作为V族源，取V/III比的范围为100～2000，生长厚度的范围为100～300nm的AlN层。
示例性地，在纯H 2气氛、温度的范围为950～1050℃、反应室压力的范围为25～200torr的条件下，通入TMAl/TMGa作为III族源，NH 3作为V族源，取V/III比的范围为100～2000，生长厚度的范围为0.5～1.5um的AlGaN层。
步骤403、在缓冲层上生长高阻缓冲层。
其中，高阻缓冲层为Al xGa 1-xN/GaN超晶格结构，0<x<l。
示例性地，在纯H 2气氛、温度的范围为950～1050℃、反应室压力的范围为25～200torr的条件下，通入TMAl/TMGa作为III族源，NH 3作为V族源，取V/III比的范围为100～2000，生长厚度的范围为5～20nm的Al xGa 1-xN层。
在纯H 2气氛、温度的范围为950～1050℃、反应室压力的范围为25～200torr的条件下，通入TMGa作为III族源，NH 3作为V族源，取V/III比的范围为100～2000，生长厚度的范围为10～30nm的GaN层。
步骤404、在高阻缓冲层上生长沟道层。
示例性地，在N 2、H 2气氛、温度的范围为1000℃～1200℃、反应室压力的范围为100torr～500torr的条件下，通入TMGa作为III族源，NH 3作为V族源，取V/III比的范围为5000～10000，生长厚度的范围为50～300nm的GaN沟道层。
步骤405、在沟道层上生长AlN插入层。
示例性地，在纯N 2气氛、温度的范围为800℃～1050℃、反应室压力的范围为50～200torr的条件下，通入TMAl作为III族源，NH 3作为V族源，取V/III比的范围为100～2000，生长厚度的范围为0.2～2nm的AlN插入层。
步骤406、在AlN插入层上生长AlGaN势垒层。
示例性地，在纯H 2气氛、温度的范围为950℃～1000℃、反应室压力的范围为100torr～200torr的条件下，通入TMGa、TMAl作为III族源，NH 3作为V族源，取V/III比的范围为5000～10000，生长厚度的范围为30～100nm的AlGaN势垒层。
步骤407、在AlGaN势垒层上生长帽层。
其中，帽层包括交替生长的第一子层和第二子层。第一子层为GaN层，第二子层为InGaN层。第一子层和第二子层中均掺杂有主掺杂元素，主掺杂元素 为Be和Mg中的至少一种。第二子层中还掺杂有辅助掺杂元素，辅助掺杂元素为O、Mg、Si和Zn中的至少一种。
在本公开实施例中，第二子层中共同掺有例如Be-Mg、Be-O、Be-Si、Mg-O、Mg-Si、Mg-Zn等两种元素。其中，前一个为主掺杂元素，后一个为辅助掺杂元素。
可选地，第一子层和第二子层中主掺杂元素的掺杂浓度均的范围为1*10 19～9*10 21cm -3。
若主掺杂元素的掺杂浓度过低，会导致受主掺杂浓度偏低，使得帽层最终无法呈P型。若主掺杂元素的掺杂浓度过高，又会导致载流子散射加强，显著降低载流子迁移率。
可选地，第二子层中的辅助掺杂元素的掺杂浓度的范围为1*10 18～5*10 21cm -3。
若辅助掺杂元素的掺杂浓度过低，则不能起到降低受主的激活能，提高帽层中P型掺杂剂的有效掺杂浓度的作用。若辅助掺杂元素的掺杂浓度过高，不仅会使得施主掺杂浓度偏高，导致帽层最终无法呈P型，同时还会使得外延片的缺陷增加，晶体质量变差。
可选地，第二子层中的主掺杂元素和辅助掺杂元素的掺杂浓度的比值的范围为1：1～5：1。
若主掺杂元素和辅助掺杂元素的掺杂浓度的比值的范围小于1：1，则主掺杂元素比例过少，受主掺杂浓度偏低，会导致帽层最终无法呈P型。若主掺杂元素和辅助掺杂元素的掺杂浓度得比值大于5：1，则辅助参杂元素中的施主杂质的掺杂浓度偏低，又无法起到降低受主的激活能，提高帽层中P型掺杂剂的掺杂浓度的作用。
可选地，第二子层中In的掺杂浓度的范围为10～10 4cm -3。
若In的掺杂浓度过高会导致外延片质量变差，若In的掺杂浓度过低则起不到抑制Ga原子的并入，增大帽层表面的有效V/III比，进而抑制N空位的形成，防止帽层中掺杂的Mg或Be与N空位形成络合物，产生自补偿效应的作用。
可选地，帽层包括n个周期交替生长的第一子层和第二子层。帽层的厚度的范围为50nm～150nm。
若帽层的厚度小于50nm，则起不到实现GaN基增强型高电子迁移率晶体管器件的作用。若帽层的厚度大于150nm，则会由于帽层的过厚而影响GaN/AlGaN 异质结界面二维电子气浓度。
示例性地，帽层的厚度的范围为100nm。
示例性地，步骤407可以包括：
在N 2和H 2混合气氛、温度的范围为800～1050℃、反应室压力的范围为50～600torr的条件下，通入TMGa作为III族源，NH 3作为V族源，取V/III比的范围为100～5000，生长厚度的范围为50～150nm的帽层。
示例性地，生长帽层时反应室压力的范围为50～300torr。
步骤408、将外延片进行炉内退火。
示例性地，外延生长结束后，将MOCVD设备的反应室内温度降低，在氮气气氛中进行退火处理，退火温度的范围可为600～900℃，退火时间的范围为5～15分钟，然后降至室温，完成外延生长。通过对外延片进行退火处理可以加强帽层中络合物的分解，从而有利于将原来被H钝化了的Mg受主激活，为P型电导提供载流子。
本公开实施例通过将帽层设置为第一子层和第二子层交替生长的结构，其中，第一子层为GaN层，第二子层为InGaN层，第一子层和第二子层中均掺有Be和Mg中的至少一种，Be和Mg中的至少一种为P型掺杂剂。由于In为杂质，通入过多会影响外延片的晶体质量，因此，通过在GaN帽层生长时间歇性的通入少量In，从而形成交替的第一子层和第二子层，其中第一子层在没有In通入的时候形成，第二子层在有In通入的时候形成，可以减少In杂质对外延片晶体质量的影响。In可以抑制Ga原子的并入，从而可以增大帽层表面的有效V/III比，进而可以抑制N空位的形成，防止帽层中掺杂的Mg或Be与N空位形成络合物，产生自补偿效应，保证了有效载流子浓度。同时，Mg或Be作为受主，一方面，第二子层中掺杂的辅助掺杂元素O或Si等可以作为施主杂质，降低受主的激活能，从而提高帽层中P型掺杂剂的有效掺杂浓度。另一方面，第二子层中掺杂的辅助掺杂元素Mg或Zn可以作为受主，进一步提高帽层中P型掺杂剂的掺杂浓度，最终得到高掺杂浓度的P型帽层。
以上所述仅为本公开的可选实施例，并不用以限制本公开，凡在本公开的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (12)

  1. 一种氮化镓基高电子迁移率晶体管外延片，包括衬底以及依次层叠在所述衬底上的缓冲层、高阻缓冲层、沟道层、AlGaN势垒层和帽层，
    所述帽层包括交替生长的第一子层和第二子层，所述第一子层为GaN层，所述第二子层为InGaN层，所述第一子层和所述第二子层中均掺杂有主掺杂元素，所述主掺杂元素为Be和Mg中的至少一种，所述第二子层中还掺杂有辅助掺杂元素，所述辅助掺杂元素为O、Mg、Si和Zn中的至少一种。
  2. 根据权利要求1所述的氮化镓基高电子迁移率晶体管外延片，其中，所述第一子层和所述第二子层中的所述主掺杂元素的掺杂浓度均的范围为1*10 19～9*10 21cm -3。
  3. 根据权利要求1或2所述的氮化镓基高电子迁移率晶体管外延片，其中，所述第二子层中的所述辅助掺杂元素的掺杂浓度的范围为1*10 18～5*10 21cm -3。
  4. 根据权利要求1至3任一项所述的氮化镓基高电子迁移率晶体管外延片，其中，所述第二子层中的所述主掺杂元素和所述辅助掺杂元素的掺杂浓度的比值的范围为1：1～5：1。
  5. 根据权利要求1至4任一项所述的氮化镓基高电子迁移率晶体管外延片，其特征在于，所述第二子层中的In的掺杂浓度的范围为10～10 4cm -3。
  6. 根据权利要求1至5任一项所述的氮化镓基高电子迁移率晶体管外延片，其中，所述帽层包括n个周期交替生长的第一子层和第二子层，1≤n≤10。
  7. 根据权利要求1至6任一项所述的氮化镓基高电子迁移率晶体管外延片，其中，所述帽层的总厚度的范围为50～150nm。
  8. 根据权利要求7所述的氮化镓基高电子迁移率晶体管外延片，其中，所述第一子层的厚度的范围为5～20nm，所述第二子层的厚度的范围为10～30nm。
  9. 一种氮化镓基高电子迁移率晶体管外延片的制备方法，所述制备方法包括：
    提供一衬底；
    在所述衬底上依次生长缓冲层、高阻缓冲层、沟道层、AlGaN势垒层和帽层；
    所述帽层包括交替生长的第一子层和第二子层，所述第一子层为GaN层，所述第二子层为InGaN层，所述第一子层和所述第二子层中均掺杂有主掺杂元素，所述主掺杂元素为Be和Mg中的至少一种，所述第二子层中还掺杂有辅助掺杂元素，所述辅助掺杂元素为O、Mg、Si和Zn中的至少一种。
  10. 根据权利要求9所述的制备方法，其特征在于，所述在所述衬底上依次生长缓冲层、高阻缓冲层、沟道层、AlGaN势垒层和帽层，包括：
    在生长温度的范围为800～1050℃、生长压力的范围为50～600torr的条件下，在所述AlGaN势垒层上生长所述帽层。
  11. 根据权利要求9或10所述的制备方法，其中，所述制备方法还包括：
    在生长完所述帽层后，将所述外延片进行炉内退火。
  12. 根据权利要求11所述的制备方法，其中，退火温度的范围为600～900℃，退火时间的范围为5～10min。
PCT/CN2021/114901 2020-08-28 2021-08-27 氮化镓基高电子迁移率晶体管外延片及其制备方法 WO2022042672A1 (zh)

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