WO2022041897A1 - 用于石英部件的表面处理方法 - Google Patents

用于石英部件的表面处理方法 Download PDF

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WO2022041897A1
WO2022041897A1 PCT/CN2021/096923 CN2021096923W WO2022041897A1 WO 2022041897 A1 WO2022041897 A1 WO 2022041897A1 CN 2021096923 W CN2021096923 W CN 2021096923W WO 2022041897 A1 WO2022041897 A1 WO 2022041897A1
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Prior art keywords
quartz
roughness
component
treatment method
surface treatment
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English (en)
French (fr)
Inventor
袁家周
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to US17/445,084 priority Critical patent/US20220064787A1/en
Publication of WO2022041897A1 publication Critical patent/WO2022041897A1/zh
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/04—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces

Definitions

  • the present application relates to the field of semiconductor technology, and in particular, to a surface treatment method for quartz components.
  • the titanium film will continue to accumulate in the reaction chamber due to the manufacturing process, resulting in the accumulated film on the surface of the quartz part where the wafer is placed in the machine. Thick, during the wafer preparation process, the film accumulated on the surface of the wafer is easy to fall on the surface of the wafer, resulting in abnormal growth of the thin film on the wafer surface. It can only be found when the electrical properties of the test machine and the back-end wafer are abnormal.
  • the embodiments of the present application provide at least one surface treatment method for quartz parts, which can increase the surface roughness of the quartz parts, enhance the adhesion of the quartz parts, and can also remove the sharp corners formed after sandblasting the quartz parts, so as to avoid the quartz parts in the manufacturing process.
  • a linear film is formed on the surface to improve the yield of the wafer.
  • An embodiment of the present application provides a method for surface treatment of a quartz component, including: sandblasting the quartz component; ultrasonically oscillating the sandblasted quartz component to remove sharp corners formed on the surface of the quartz component; Washing the quartz part; drying the quartz part after washing.
  • the following steps are further included: cleaning the quartz parts with chemicals; washing and oscillating the cleaned quartz parts; washing and oscillating the quartz parts with water dry.
  • the roughness Ra of the quartz part after the ultrasonic vibration treatment is the same as the roughness after the sandblasting.
  • the roughness Ra1 of the quartz part satisfies: 95% Ra1 ⁇ Ra2 ⁇ 105%Ra1.
  • the frequency of the ultrasonic oscillation is 100KHZ to 150KHZ.
  • the ultrasonic oscillation time is 10 min to 20 min.
  • the following steps are further included: detecting the surface roughness of the quartz part to determine whether the surface roughness of the quartz part satisfies the preset roughness standard.
  • the step of detecting the surface roughness of the quartz component includes the following steps: selecting a plurality of detection points of the quartz component; measuring the plurality of detection points to obtain a plurality of roughnesses ; in judging whether the surface roughness of the quartz component satisfies a preset roughness standard, judging whether a plurality of the roughnesses meet the preset roughness standard.
  • the preset roughness standard is that the roughness of each of the detection points is 4.5um-7.5um, and the maximum difference between the roughnesses of the plurality of detection points is less than 2um.
  • the following step is further included: when the roughness of the detection point does not meet the preset roughness standard Grinding the detection point area, and sandblasting the detection point area with low roughness, until the roughness of a plurality of the detection points meets the preset roughness standard.
  • the ultrasonic oscillation treatment and the infiltration and rinsing of the quartz part are performed multiple times in a cycle.
  • FIG. 1 is a flowchart 1 of a surface treatment method for a quartz component provided by an embodiment of the present application
  • FIG. 2 is a second flowchart of a surface treatment method for a quartz component provided by an embodiment of the present application
  • Fig. 3 is the structural schematic diagram after the quartz component film after sandblasting is attached
  • Fig. 4 is the image acquisition picture of the quartz part surface after sandblasting
  • Fig. 5 is the surface structure schematic diagram of quartz component after ultrasonic vibration treatment
  • FIG. 6 is an image acquisition picture of the surface of the quartz component after ultrasonic vibration.
  • the surface treatment method of the quartz component according to the embodiment of the present application will be described below with reference to the accompanying drawings.
  • the execution body of the embodiment of the present application may be a surface treatment device.
  • the surface treatment method for a quartz component includes the following steps:
  • the quartz component 1 may be located in the deposition chamber, such as around the plasma shower head, for gathering the plasma gas above the chamber stage, during the deposition preparation process of the wafer , the surface of the quartz part 1 is inevitably attached to form a film of a certain thickness, the film has a low adhesion on the surface of the quartz part 1, and it is easy to fall on the surface of the wafer to cause abnormal wafers.
  • the surface of the quartz part 1 is sandblasted to form
  • the sandblasting layer 2 can enhance the roughness of the surface of the quartz part 1, so that the adhesion of the film on the surface of the quartz part 1 will be greatly increased, so as to avoid the abnormal wafer yield caused by the film falling on the wafer surface.
  • the sandblasting process is a process of cleaning and roughening the surface of the substrate by using the impact of high-speed sand flow.
  • Compressed air is used as power to form a high-speed jet beam to spray materials (copper ore, quartz sand, emery, iron sand, Hainan sand) to the surface of the workpiece to be treated at a high speed, so that the appearance or shape of the outer surface of the workpiece surface changes.
  • the surface of the workpiece Due to the impact and cutting effect of the abrasive on the surface of the workpiece, the surface of the workpiece can obtain a certain degree of cleanliness and different roughness, so that the mechanical properties of the workpiece surface are improved, thus improving the fatigue resistance of the workpiece, increasing its and coating
  • the adhesion between layers extends the durability of the coating film.
  • the surface treatment device can use quartz sand for sandblasting the quartz component 1, thereby increasing the surface roughness of the quartz component 1, enhancing the adhesion of the film, and making the film difficult to fall off.
  • the surface treatment device can blast the inner wall surface and part of the outer wall surface of the quartz part 1 containing the wafer.
  • a shielding part can be used to cover part of the quartz part 1 to expose the part of the quartz part 1 that needs to be sandblasted, reducing the need for sandblasting. Waste of blasting material.
  • quartz sand may also be used for sandblasting.
  • 180 mesh small-grain quartz sand can be used for sandblasting at a fixed angle, so as to improve the uniformity of the surface roughness of the quartz parts after sandblasting.
  • sandblasting can be carried out at an angle of 70-90 degrees to the quartz surface, which can be 70 degrees, 75 degrees, 80 degrees, 85 degrees or 90 degrees; the sandblasting pressure is 3-5 kg pressure, which can be 3 kg, 3.5kg, 4kg, 4.5kg or 5kg; the distance between the nozzle of the sandblasting machine and the surface of the quartz part 1 to be sandblasted is 8cm-10cm, which can be 8cm, 9cm or 10nm, so that the sandblasting can be more uniform, and To achieve the required roughness of the quartz part.
  • the surface treatment device can perform ultrasonic vibration treatment on the sandblasted quartz component 1 to remove the sharp corners 3 formed on the surface of the quartz component 1, thereby making The surface roughness of the quartz component 1 is more uniform, avoiding the growth of a linear film 4 at the sharp corners 3 in the subsequent process, so as to further improve the wafer yield.
  • the roughness Ra2 of the quartz part 1 after ultrasonic vibration treatment and the roughness Ra1 of the quartz part 1 after sandblasting satisfy: 95%Ra1 ⁇ Ra2 ⁇ 105%Ra1, so the quartz part after ultrasonic vibration treatment
  • the error between the roughness of 1 and the roughness of the quartz part 1 after sandblasting is ⁇ 5%, so that the adhesion of the surface of the quartz part 1 to the film can be ensured, and at the same time, the formation of sandblasting can be avoided within this range.
  • the sharp corners 3 cause defects to the product.
  • the roughness Ra of the quartz component 1 after the ultrasonic vibration treatment here refers to the roughness of the quartz component 1 after the ultrasonic vibration treatment for many times.
  • Figure 3 is a schematic view of the structure of the quartz part 1 after sandblasting after the film is attached
  • Figure 4 is an image acquisition picture of the surface of the quartz part 1 after sandblasting.
  • Figures 3 and 4 the sharp angle on the surface of the quartz part 1 after sandblasting is obvious And the protruding point is relatively sharp, and the linear film 4 is attached to the sharp corner 3 formed after sandblasting
  • Figure 5 is a schematic diagram of the surface structure of the quartz part 1 after ultrasonic vibration treatment
  • Figure 6 is the surface of the quartz part 1 after ultrasonic vibration.
  • the acute angle on the surface of the quartz part 1 is relatively smooth, and there is no particularly prominent point.
  • the surface of the quartz part 1 after ultrasonic vibration treatment has no sharp angle 3, and the linear film 4 cannot be attached .
  • the surface of the quartz part 1 has particles that are shaken and dropped.
  • the ultrasonic vibration treatment and the washing of the quartz part 1 can be carried out repeatedly in a cycle, that is to say, the surface treatment device can perform multiple ultrasonic vibration treatment and multiple cleanings on the quartz part 1, which specifically includes performing the quartz part 1 once
  • the quartz part 1 is washed once to wash off the particles on the surface of the quartz part 1, and then the quartz part 1 is subjected to ultrasonic vibration treatment again, and washed again, and the cycle is repeated many times to remove the Sharp corners 3 on the surface of the quartz part 1 .
  • the surface treatment device may dry the quartz component 1 after performing ultrasonic vibration treatment and rinsing for many times.
  • the frequency of the ultrasonic vibration may be 100KHZ-150KHZ, or 120KHZ-140KHZ; the power of the ultrasonic vibration is 130HZ-170HZ, or 145HZ ⁇ 160HZ; the ultrasonic vibration treatment time can be 10min ⁇ 20min, or 13min ⁇ 18min; when the quartz part 1 is washed, ultrapure water can be used for washing, and the washing time can be 15min ⁇ 25min .
  • the frequency at which the surface treatment device can perform ultrasonic oscillation treatment on the quartz component 1 can be 130KHZ, the power is 155HZ, the oscillation treatment time is 15min, and after removing the sharp corner 3, it is rinsed with ultrapure water for 20min,
  • the ultrapure water may be at room temperature.
  • ultrasonic vibration treatment can remove the sharp corners formed on the surface of the quartz parts after sandblasting, and the surface roughness of the quartz parts after ultrasonic vibration treatment can be maintained and the surface roughness of the quartz parts after sandblasting is in the range of ⁇ 5% Therefore, in the case of removing sharp corners, the surface roughness of the quartz part is maintained, thereby improving the adhesion of the film on the surface of the quartz part, and avoiding the abnormal wafer yield caused by the film falling on the surface of the wafer.
  • the time of the ultrasonic vibration treatment here refers to the total time of the ultrasonic vibration treatment in the surface treatment method for the quartz component 1 in the embodiment of the present application.
  • the time for the quartz component 1 to undergo one ultrasonic vibration treatment is 10min-20min, and it may also be 13min-18min, and then the time for the infiltration and washing is 15min-25min.
  • the ultrasonic vibration treatment and the washing can be divided into multiple cycles, and the total time of the multiple ultrasonic vibration treatment of the quartz part 1 is 10min ⁇ 20min, or 13min ⁇ 18min, and the time of multiple washing is 15min ⁇ 20min. 25min, in which ultrasonic vibration treatment and washing can be carried out 3-4 times in a cycle, the time of each ultrasonic vibration treatment can be 3min-5min, and the time of each washing is 4min-7min.
  • the thin film formed on the surface of the quartz part 1 can be effectively removed, and the surface roughness of the quartz part 1 can be made more uniform, which is conducive to uniform sandblasting of the quartz part 1, so that the The surface roughness of the quartz part 1 after sanding is more uniform, and the generation of the sharp corners 3 and the linear films 4 at the sharp corners 3 is reduced.
  • the thin film deposited on the surface of the quartz component 1 is titanium.
  • the chemical used may be a mixed solution of hydrogen peroxide and potassium hydroxide, wherein the concentration of the hydrogen peroxide may be 40 %, the concentration of potassium hydroxide can be 20%, thus, the thin film formed on the quartz surface can be effectively removed.
  • the composition of the chemical solution during chemical cleaning is not limited to this, and different chemical cleaning can be selected according to films of different materials.
  • the following step is further included: detecting the surface roughness of the quartz part 1 to judge the surface roughness of the quartz part 1 Whether the roughness meets the preset roughness standard. If the surface roughness of the quartz part 1 is not uniform, the thickness and resistance distribution of the film formed on the surface of the quartz part 1 will be shifted when the film is grown in the subsequent process. Uniform, resulting in inconsistent thickness of the deposited film on the surface, which affects the inconsistent plasma gas concentration in each area of the chamber, and eventually leads to inconsistent thickness of the wafer film deposition. Uniformity of surface roughness of part 1. When the surface roughness of the quartz part 1 does not meet the preset roughness standard, the quartz part 1 may be further processed to make the surface roughness of the quartz part 1 more uniform and meet the preset roughness standard.
  • the step of detecting the surface roughness of the quartz component 1 may include the following steps: selecting multiple detection points of the quartz component 1 , specifically including selecting multiple detection points on the inner sidewall of the quartz component 1 Detecting the detection point and multiple detection points on the outer sidewall of the quartz component 1; measuring the multiple detection points to obtain a plurality of roughnesses; judging whether the surface roughness of the quartz component 1 meets the preset roughness standard In the process, it is judged whether a plurality of the roughnesses satisfy the preset roughness standard. When the roughness of the inspection point does not meet the preset roughness standard, grind the inspection point area with high roughness and blast the inspection point area with low roughness until the roughness of multiple inspection points meets the preset roughness standard.
  • the area with high roughness value can be polished with a scouring pad to reduce the roughness, and the area with low roughness value can be sandblasted again to increase the roughness, so that the surface of the treated quartz part 1
  • the roughness is more uniform, which is beneficial to the adhesion of the film and reduces the generation of the linear film 4 .
  • the preset roughness standard is that the roughness of each detection point is 4.5um-7.5um, and the maximum difference between the roughness of multiple detection points is less than 2um, so that the surface of the quartz part 1 can be divided into multiple detection points.
  • the roughness is controlled between 4.5um and 7.5um, and the maximum roughness value and the minimum roughness in the detection point should be controlled within 2um, so that the surface roughness of the processed quartz part 1 is more uniform.
  • 8 detection points on the inner sidewall of the quartz component 1 and 8 detection points on the outer sidewall of the quartz component 1 may be selected for detection, wherein the inner sidewall is the quartz component 1 closest to the plasma gas shower head.
  • the closest part the following table shows the roughness values of 16 test points of quartz part 1 before sandblasting, after sandblasting and after ultrasonic vibration treatment.
  • the sandblasting process uses 180 mesh small particle quartz sand for 90 fixed angle sandblasting, the ultrasonic oscillation frequency is 130KHZ, the power is 155HZ, and the oscillation time is 15min.
  • Table 1 shows the roughness values measured before sandblasting, after sandblasting, and after ultrasonic vibration treatment at inspection points 1-8 of quartz components
  • Table 2 shows the roughness values measured before sandblasting, after sandblasting, and after ultrasonic vibration treatment at No. 9-16 inspection points of quartz components
  • the roughness of the quartz part 1 is greatly enhanced after sandblasting.
  • the sharp corners 3 formed on the surface of the quartz part 1 can be reduced, and the ultrasonic vibration
  • the surface roughness of the quartz part after treatment can be maintained and the surface roughness of the quartz part after sandblasting is within the range of ⁇ 5%, so as to maintain the surface roughness of the quartz part in the case of removing sharp corners, thereby improving the film on the surface of the quartz part.
  • the adhesion force is improved, while avoiding the generation of the linear film 4, which further reduces the risk of the film on the surface of the quartz component 1 falling to the surface of the wafer.
  • An embodiment of the present application provides a surface treatment method for a quartz component, the method comprising: sandblasting the quartz component; ultrasonically oscillating the sandblasted quartz component to remove sharp corners formed on the surface of the quartz component; Wash the quartz parts; dry the washed quartz parts.

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Abstract

本申请公开了一种用于石英部件的表面处理方法，包括：对所述石英部件进行喷砂；对喷砂后的石英部件进行超声波震荡处理，以去除所述石英部件表面形成的尖角；对所述石英部件进行侵洗；对侵洗后的所述石英部件进行干燥。所述用于石英部件的表面处理方法能够增加石英部件表面粗糙度，增强石英部件的附着力，还能够去除石英部件喷砂后形成的尖角，以避免石英部件在制成过程中表面形成线状膜，提高晶圆的良率。

Description

用于石英部件的表面处理方法
相关申请的交叉引用
本申请基于申请号为202010883169.1、申请日为2020年08月28日的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本申请作为参考。
技术领域
本申请涉及半导体技术领域，具体涉及一种用于石英部件的表面处理方法。
背景技术
现有半导体制备设备例如TF CVD机台TEL HP–Ti反应室，在制成中钛薄膜因制程会持续累积在反应室内，导致机台内放置晶圆的石英部件表面累计的膜会越来越厚，在晶圆制备过程中，累积在晶圆表面的膜容易掉落在晶圆表面，造成晶圆表面薄膜生长异常，目前针对石英部件表面附着力不好的问题，没办法提前预防，只能在测机以及后站晶圆电性异常时才能发现。
发明内容
本申请实施例至少提供一种用于石英部件的表面处理方法，能够增加石英部件表面粗糙度，增强石英部件的附着力，还能够去除石英部件喷砂后形成尖角，以避免石英部件在制成过程中表面形成线状膜，提高晶圆的良率。
本申请实施例提供了一种石英部件的表面处理方法，包括：对所述石英部件进行喷砂；对喷砂后的石英部件进行超声波震荡处理，以去除所述石英部件表面形成的尖角；对所述石英部件进行侵洗；对侵洗后的所述石英部件进行干燥。
上述方案中，在对所述石英部件进行喷砂之前还包括以下步骤：对所述石英部件进行药剂清洗；对清洗后的所述石英部件进行水洗震荡；对所述水洗震荡后的石英部件进行干燥。
上述方案中，在对喷砂后的石英部件进行超声波震荡处理，以去除所述石英部件表面形成的尖角的步骤中，超声波震荡处理后的所述石英部件的粗糙度Ra2与喷砂后所述石英部件的粗糙度Ra1满足：95％Ra1≤Ra2≤105％Ra1。
上述方案中，在对所述喷砂后的石英部件进行超声波震荡处理步骤中，所述超声波震荡的频率为100KHZ～150KHZ。
上述方案中，在对所述喷砂后的石英部件进行超声波震荡处理的步骤中，采用超声波震荡的时间为10min～20min。
上述方案中，在对侵洗后的所述石英部件进行干燥后还包括以下步骤：对所述石英部件的表面粗糙度进行检测，以判断所述石英部件的表面粗糙度 是否满足预设粗糙度标准。
上述方案中，在对所述石英部件的表面粗糙度进行检测的步骤中，包括以下步骤：选取所述石英部件的多个检测点；对所述多个检测点进行测量以获取多个粗糙度；在判断所述石英部件的表面粗糙度是否满足预设粗糙度标准中，判断多个所述粗糙度是否满足所述预设粗糙度标准。
上述方案中，所述预设粗糙度标准为每个所述检测点的粗糙度为4.5um-7.5um，且多个所述检测点的粗糙度的最大差值小于2um。
上述方案中，在判断多个所述粗糙度是否满足所述预设粗糙度标准的步骤后，还包括以下步骤：在所述检测点的粗糙度不满足预设粗糙度标准时，对粗糙度高的检测点区域进行打磨，对粗糙度低的检测点区域进行喷砂，直至多个所述检测点的粗糙度满足预设粗糙度标准。
上述方案中，在对喷砂后的石英部件进行超声波震荡处理；对所述石英部件进行侵洗步骤中，所述超声波震荡处理和对石英部件进行侵洗循环执行多次。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，此处的附图被并入说明书中并构成本说明书中的一部分，这些附图示出了符合本申请的实施例，并与说明书一起用于说明本申请实施例的技术方案。应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1是本申请实施例提供的用于石英部件的表面处理方法的流程图一；
图2是本申请实施例提供的用于石英部件的表面处理方法的流程图二；
图3是喷砂后的石英部件薄膜附着后的结构示意图；
图4是喷砂后石英部件表面的图像采集图片；
图5是经过超声波震荡处理后石英部件的表面结构示意图；
图6是经过超声波震荡后石英部件表面的图像采集图片。
附图标记：
1：石英部件；2：喷砂后石英部件表面形成的喷砂层；3：尖角；4：线状膜。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。 因此，以下对在附图中提供的本申请实施例的详细描述并非旨在限制要求保护的本申请实施例的范围，而是仅仅表示本申请的选定实施例。基于本申请实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本申请实施例保护的范围。
以下结合附图和具体实施方式对本申请提出的一种石英部件的表面处理方法作进一步详细说明。
下面参考附图描述根据本申请实施例的石英部件的表面处理方法。本申请实施例的执行主体可以是表面处理装置。
如图1所示，根据本申请实施例的石英部件的表面处理方法包括以下步骤：
S101、对石英部件1进行喷砂。
S102、对喷砂后的石英部件1进行超声波震荡处理，以去除石英部件1表面形成的尖角3。
S103、对石英部件1进行侵洗。
S104、对侵洗后的石英部件1进行干燥。
以下对上述步骤分别进行说明。
在上述S101中，在半导体制备设备中，石英部件1可位于沉积腔室内，如位于等离子体喷淋头周围，用于聚集等离子气体到腔室载台上方，在对晶圆进行沉积制备过程中，石英部件1表面不可避免附着形成一定厚度的薄膜，薄膜在石英部件1表面的附着力较低，容易掉落在晶圆表面造成晶圆异常，通过对石英部件1的表面进行喷砂以形成喷砂层2，能够增强石英部件1表面的粗糙度，使得薄膜在石英部件1表面的附着力会大大增加，以避免薄膜掉落在晶圆表面造成晶圆良率异常。
需要说明的是，喷砂过程是利用高速砂流的冲击作用清理和粗化基体表面的过程。采用压缩空气为动力，以形成高速喷射束将喷料(铜矿砂、石英砂、金刚砂、铁砂、海南砂)高速喷射到需要处理的工件表面，使工件表面的外表面的外表或形状发生变化，由于磨料对工件表面的冲击和切削作用，使工件的表面获得一定的清洁度和不同的粗糙度，使工件表面的机械性能得 到改善，因此提高了工件的抗疲劳性，增加了它和涂层之间的附着力，延长了涂膜的耐久性。
需要说明的是，表面处理装置在对石英部件1进行喷砂时，可使用石英砂进行喷砂，从而能够增加石英部件1表面的粗糙度，增强薄膜的附着力，使得薄膜不易脱落。表面处理装置在喷砂时可对石英部件1容纳晶圆的内壁面和部分外壁面进行喷砂，可采用遮护部件遮住部分石英部件1，暴露需要石英部件1需要喷砂的部分，减少喷砂材料的浪费。在本申请的其他实施例中，也可采用石英砂进行喷砂。
在本申请的一些实施例中，表面处理装置在喷砂过程中，可采用180目的小颗粒石英砂进行固定角度喷砂，以提高喷砂后石英部件的表面粗糙度的均匀性，本实施例中，可以采用与石英表面成70-90度的角度进行喷砂，可以为70度、75度、80度、85度或90度；喷砂压力为3-5公斤压力，可以为3公斤、3.5公斤、4公斤、4.5公斤或5公斤；喷砂机的喷头距离待喷砂的石英部件1的表面距离为8cm-10cm，可以为8cm、9cm或10nm，从而能够使得喷砂更加均匀，且达到符合要求的石英部件的粗糙度。
在上述S102中，表面处理装置对石英部件1表面喷砂后，石英部件1的表面会形成一些尖角3，在后续晶圆长膜工艺中，石英部件1的尖角3处长的膜会呈线状垂下以形成线状膜4，线状膜4容易脱落掉晶圆上。为了降低线状膜4掉落在晶圆表面造成的良率异常，表面处理装置可对喷砂后的石英部件1进行超声波震荡处理，以去除石英部件1表面形成的尖角3，由此使得石英部件1表面粗糙度更加均匀，避免后续工艺中在尖角3处长出线状膜4，以进一步地提高晶圆良率。
其中，超声波震荡处理后的所述石英部件1的粗糙度Ra2与喷砂后所述石英部件1的粗糙度Ra1满足：95％Ra1≤Ra2≤105％Ra1，这样通过超声波震荡处理后的石英部件1的粗糙度与喷砂后的石英部件1的粗糙度的误差为±5％，由此，能够保证石英部件1表面对薄膜的附着性，同时在此范围内也能够避免喷砂后形成的尖角3对产品造成缺陷。需要说明的是，当超声波震荡处理和清洗分为多次循环进行时，此处超声波震荡处理后的石英部件1的 粗糙度Ra2指的是多次超声波震荡处理后的石英部件1的粗糙度。
图3为喷砂后石英部件1薄膜附着后的结构示意图，图4是喷砂后石英部件1表面的图像采集图片，如图3和图4所示，喷砂后的石英部件1表面锐角明显且突出点比较锋利，线状膜4附着在喷砂后形成的尖角3上；图5是经过超声波震荡处理后石英部件1的表面结构示意图，图6是经过超声波震荡后石英部件1表面的图像采集图片，如图6所示，石英部件1表面锐角较为平缓，无特别突出的点，如图5所示，超声波震荡处理后的石英部件1表面无尖角3，线状膜4无法附着。
在上述S103中，超声波震荡处理后，石英部件1表面具有震荡掉落的颗粒，表面处理装置通过对石英部件1进行侵洗，可将石英部件1表面掉落的颗粒冲洗掉。其中，超声波震荡处理和石英部件1的侵洗可循环多次进行，也就是说，表面处理装置可对石英部件1进行多次超声波震荡处理和多次清洗，具体包括，对石英部件1进行一次超声波震荡处理后，对石英部件1进行一次侵洗，以冲掉石英部件1表面的颗粒，然后再次对石英部件1进行超声波震荡处理，并再次进行侵洗，由此循环进行多次，以去掉石英部件1表面的尖角3。
在上述S104中，表面处理装置在多次进行超声波震荡处理和侵洗后，可对石英部件1进行干燥。
在本申请的一些实施例中，在对石英部件1进行超声波震荡处理过程中，超声波震荡的频率可以为100KHZ～150KHZ，也可以为120KHZ～140KHZ；超声波震荡的功率为130HZ～170HZ，也可以为145HZ～160HZ；采用超声波震荡处理的时间可以为10min～20min，也可以为13min～18min；在对石英部件1进行侵洗时可采用超纯水进行侵洗，侵洗的时间可以为15min～25min。
在本申请的一些实施例中，表面处理装置可对石英部件1进行超声波震荡处理的频率可以为130KHZ，功率为155HZ，震荡处理时间持续为15min，去除尖角3后用超纯水冲洗20min，超纯水可以为常温。在此条件下进行超声波震荡处理，可以去除喷砂后石英部件表面形成的尖角，且超声波震荡处理后石英部件表面的粗糙度可以维持和喷砂后石英部件表面粗糙度在±5％的范 围内，从而在去除尖角的情况下，保持石英部件表面粗糙度，从而提高薄膜在石英部件表面的附着力，避免薄膜掉落在晶圆表面造成晶圆良率异常。
需要说明的是，这里的超声波震荡处理的时间指的是在本申请实施例的用于石英部件1表面处理方法中的超声波震荡处理的总时间，例如在进行超声波震荡处理和侵洗的过程只进行一次时，则石英部件1经过一次超声波震荡处理时间为10min～20min，也可以为13min～18min，然后，进行侵洗的时间为15min～25min。再例如，超声波震荡处理和侵洗可分为多次循环进行，则石英部件1多次超声波震荡处理的总时间为10min～20min，也可以为13min～18min，多次侵洗的时间为15min～25min，其中超声波震荡处理和侵洗可循环进行3-4次，每次超声波震荡处理时间可以为3min-5min，每次侵洗的时间为4min-7min。
在本申请的一些实施例中，如图2所示，在上述S101之前，还包括以下步骤：
S201、对石英部件1表面进行药剂清洗。
S202、对清洗后的石英部件1进行水洗震荡。
S203、对水洗震荡后的石英部件1进行干燥。
这样，在对石英部件1进行喷砂前，能够有效去除石英部件1的表面形成的薄膜，也能够使得石英部件1表面粗糙度更加均匀，从而有利于对石英部件1进行均匀喷砂，使得喷砂后的石英部件1表面粗糙度更加均匀一致，减小尖角3和尖角3处线状膜4的产生。
在本申请的一些实施例中，石英部件1表面沉积形成的薄膜为钛，对石英部件1进行药剂清洗时，采用的药剂可为双氧水和氢氧化钾的混合溶液，其中双氧水的浓度可以为40％，氢氧化钾的浓度可以为20％，由此，可有效去除石英表面形成的薄膜。需要说明的是，药剂清洗时的药剂溶液的成分不限于此，可根据不同材料的薄膜选择不同的药剂清洗。
在本申请的一些实施例中，在对侵洗后的石英部件1进行干燥后，还包括以下步骤：对所述石英部件1的表面粗糙度进行检测，以判断所述石英部件1的表面粗糙度是否满足预设粗糙度标准。若石英部件1表面粗糙度不均 匀，在后续工艺中长膜时造成石英部件1表面形成的薄膜厚度和阻值分布会发生偏移，在后续工艺薄膜沉积过程中，由于石英部件表面粗糙度不均匀，导致其表面沉积薄膜的厚度不一致，从而影响腔室中各区域的等离子气体浓度不一致，最终导致晶圆薄膜沉积出现厚度不一致的情况，通过对石英部件1表面粗糙度的检测，能够判断石英部件1表面粗糙度的均匀性。当石英部件1表面粗糙度不符合预设粗糙度标准时，可对石英部件1进行进一步处理，以使得石英部件1表面粗糙度更加均匀，符合预设粗糙度标准。
本申请实施例中，在对石英部件1表面粗糙度进行检测的步骤中，可以包括以下步骤：选取所述石英部件1的多个检测点，具体包括，可选取石英部件1内侧壁的多个检测点和石英部件1外侧壁的多个检测点进行检测；对所述多个检测点进行测量以获取多个粗糙度；在判断所述石英部件1的表面粗糙度是否满足预设粗糙度标准中，判断多个所述粗糙度是否满足所述预设粗糙度标准。在检测点的粗糙度不满足预设粗糙度标准时，对粗糙度高的检测点区域进行打磨，对粗糙度低的检测点区域进行喷砂，直至多个检测点的粗糙度满足预设粗糙度标准。
例如，对于粗糙度值高的区域可采用百洁布对其进行打磨以降低粗糙度，对粗糙度值低的区域可进行再次喷砂，以增加粗糙度，从而使得处理后的石英部件1表面粗糙度更加均匀，有利于薄膜的附着，减少线状膜4的产生。
其中，预设粗糙度标准为每个检测点的粗糙度为4.5um-7.5um，且多个检测点的粗糙度的最大差值小于2um，由此可将石英部件1表面多个检测点的粗糙度控制4.5um-7.5um之间，且检测点中最大粗糙度值和最小粗糙度需控制在2um以内，以使得处理后的石英部件1表面粗糙度更加均匀。
在本申请的一些实施例中，可选取石英部件1内侧壁的8个检测点和石英部件1外侧壁的8个检测点进行检测，其中，内侧壁为石英部件1最近接近等离子气体喷淋头最接近的部分，下面表格为石英部件1喷砂前、喷砂后以及经过超声波震荡处理的16个检测点的粗糙度值。且喷砂过程采用了180目的小颗粒石英砂进行90固定角度喷砂，超声波震荡频率为130KHZ，功率为155HZ，震荡时间为15min。
表1为石英部件1-8号检测点喷砂前、喷砂后以及经过超声波震荡处理后分别进行测量的粗糙度值
检测点 1 2 3 4 5 6 7 8
喷砂前 0.95 1.07 0.99 1.00 1.03 0.96 1.01 0.97
喷砂后 5.33 5.74 5.36 4.79 5.47 5.55 4.96 5.36
超声波震荡处理后 5.33 5.75 5.25 4.79 5.47 5.51 4.97 5.38
表2为石英部件9-16号检测点喷砂前、喷砂后以及经过超声波震荡处理后分别进行测量的粗糙度值
检测点 9 10 11 12 13 14 15 16
喷砂前 1.05 1.22 1.16 1.26 1.21 1.29 1.33 1.29
喷砂后 4.16 5.49 4.72 5.75 5.77 4.69 5.76 5.25
超声波震荡处理后 4.16 5.55 4.75 5.79 5.72 4.75 5.76 5.25
通过表格对比可看出，喷砂后大大增强了石英部件1的粗糙度，通过对喷砂后的石英部件1进行超声波震荡后，能够减小石英部件1表面形成的尖角3，且超声波震荡处理后石英部件表面的粗糙度可以维持和喷砂后石英部件表面粗糙度在±5％的范围内，从而在去除尖角的情况下，保持石英部件表面粗糙度，从而提高薄膜在石英部件表面的附着力，同时避免线状膜4的产生，进一步降低石英部件1表面薄膜掉落至晶圆表面的风险。
以上所述仅是本申请的一些实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。
工业实用性
本申请实施例提供了一种用于石英部件的表面处理方法，该方法包括：对石英部件进行喷砂；对喷砂后的石英部件进行超声波震荡处理，以去除石英部件表面形成的尖角；对石英部件进行侵洗；对侵洗后的石英部件进行干 燥。通过上述方法，可以增加石英部件表面粗糙度，增强石英部件的附着力，还可以去除石英部件喷砂后形成的尖角，以避免石英部件在制成过程中表面形成线状膜，提高了晶圆的良率。

Claims (10)

  1. 一种用于石英部件的表面处理方法，包括：
    对所述石英部件进行喷砂；
    对喷砂后的石英部件进行超声波震荡处理，以去除所述石英部件表面形成的尖角；
    对所述石英部件进行侵洗；
    对侵洗后的所述石英部件进行干燥。
  2. 根据权利要求1所述的用于石英部件的表面处理方法，其中，在对所述石英部件进行喷砂之前还包括以下步骤：
    对所述石英部件进行药剂清洗；
    对清洗后的所述石英部件进行水洗震荡；
    对所述水洗震荡后的石英部件进行干燥。
  3. 根据权利要求1所述的用于石英部件的表面处理方法，其中，在对喷砂后的石英部件进行超声波震荡处理，以去除所述石英部件表面形成的尖角的步骤中，超声波震荡处理后的所述石英部件的粗糙度Ra2与喷砂后所述石英部件的粗糙度Ra1满足：95％Ra1≤Ra2≤105％Ra1。
  4. 根据权利要求3所述的用于石英部件的表面处理方法，其中，在对所述喷砂后的石英部件进行超声波震荡处理步骤中，所述超声波震荡的频率为100KHZ～150KHZ。
  5. 根据权利要求3所述的用于石英部件的表面处理方法，其中，在对所述喷砂后的石英部件进行超声波震荡处理的步骤中，采用超声波震荡的时间为10min～20min。
  6. 根据权利要求1所述的用于石英部件的表面处理方法，其中，在对侵洗后的所述石英部件进行干燥后还包括以下步骤：
    对所述石英部件的表面粗糙度进行检测，以判断所述石英部件的表面粗 糙度是否满足预设粗糙度标准。
  7. 根据权利要求6所述的用于石英部件的表面处理方法，其中，在对所述石英部件的表面粗糙度进行检测的步骤中，包括以下步骤：
    选取所述石英部件的多个检测点；
    对所述多个检测点进行测量以获取多个粗糙度；
    在判断所述石英部件的表面粗糙度是否满足预设粗糙度标准中，判断多个所述粗糙度是否满足所述预设粗糙度标准。
  8. 根据权利要求7所述的用于石英部件的表面处理方法，其中，所述预设粗糙度标准为每个所述检测点的粗糙度为4.5um-7.5um，且多个所述检测点的粗糙度的最大差值小于2um。
  9. 根据权利要求7所述的用于石英部件的表面处理方法，其中，在判断多个所述粗糙度是否满足所述预设粗糙度标准的步骤后，还包括以下步骤：在所述检测点的粗糙度不满足预设粗糙度标准时，对粗糙度高的检测点区域进行打磨，对粗糙度低的检测点区域进行喷砂，直至多个所述检测点的粗糙度满足预设粗糙度标准。
  10. 根据权利要求1所述的用于石英部件的表面处理方法，其中，在对喷砂后的石英部件进行超声波震荡处理；对所述石英部件进行侵洗步骤中，所述超声波震荡处理和对石英部件进行侵洗循环执行多次。
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