WO2022038679A1 - Procédé de détermination d'état de traitement et dispositif de détermination d'état de traitement pour traitement à base de plasma - Google Patents

Procédé de détermination d'état de traitement et dispositif de détermination d'état de traitement pour traitement à base de plasma Download PDF

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Publication number
WO2022038679A1
WO2022038679A1 PCT/JP2020/031145 JP2020031145W WO2022038679A1 WO 2022038679 A1 WO2022038679 A1 WO 2022038679A1 JP 2020031145 W JP2020031145 W JP 2020031145W WO 2022038679 A1 WO2022038679 A1 WO 2022038679A1
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WO
WIPO (PCT)
Prior art keywords
speed
head
plasma
processing
irradiation
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Application number
PCT/JP2020/031145
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English (en)
Japanese (ja)
Inventor
俊輔 伊藤
高広 神藤
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株式会社Fuji
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Fuji filed Critical 株式会社Fuji
Priority to JP2022543845A priority Critical patent/JP7481460B2/ja
Priority to CN202080102821.XA priority patent/CN115804249A/zh
Priority to DE112020007520.6T priority patent/DE112020007520T5/de
Priority to PCT/JP2020/031145 priority patent/WO2022038679A1/fr
Publication of WO2022038679A1 publication Critical patent/WO2022038679A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/3494—Means for controlling discharge parameters

Definitions

  • This specification discloses a processing condition determination method and a processing condition determination device for plasma processing.
  • a processing result estimation model that estimates the processing result based on the monitor output from the sensor that monitors the process amount during plasma processing and the preset prediction formula of the processing result, and the processing result based on the estimation result are the targets.
  • a system including an optimum recipe calculation model for calculating a correction amount of processing conditions so as to be a value has been proposed (see, for example, Patent Document 1).
  • the influence of disturbance can be suppressed by controlling the plasma processing based on the recipe (processing conditions) generated by the optimal recipe calculation model.
  • the moving speed of the head is the most important processing condition that influences the processing speed of plasma processing, and it is desirable to determine the optimum speed by a simple method without using a special device.
  • the main object of the present disclosure is to provide a treatment condition determination method or a treatment condition determination device for plasma treatment, which can determine treatment conditions suitable for surface modification of an object by a simpler method.
  • the method for determining the processing conditions for plasma processing in the present disclosure is as follows.
  • the surface state of the object is executed once in the irradiation step based on the number of times the irradiation step is executed until the surface state of the object is saturated by repeatedly executing the irradiation step and the measurement step.
  • the calculation process to calculate the required speed required for saturation A determination step of determining the required speed to the processing speed of the head, and The gist is to include.
  • the irradiation step and the measurement step are repeatedly executed for the object. Subsequently, the required speed required for the surface state of the object to be saturated by one execution of the irradiation step is calculated based on the number of times the irradiation step is executed until the surface state of the object is saturated. Then, the required speed is determined by the processing speed of the head. Thereby, the treatment conditions suitable for surface modification of the object can be determined by a simpler method.
  • FIG. 3 is a schematic configuration diagram of a processing condition determining device 50 for plasma processing.
  • the plasma processing apparatus 10 irradiates the work W with plasma to modify the surface of the work W.
  • the work W is, for example, a substrate. After the adhesive is applied to the substrate, the components are mounted.
  • the plasma processing apparatus 10 improves the wettability (adhesive strength of the adhesive) of the substrate surface by subjecting the substrate to plasma treatment.
  • the plasma processing device 10 controls the head 20, the head moving device 31 (see FIG. 2) for moving the head 20, the head raising / lowering device 32 for raising and lowering the head 20, and the entire device.
  • the control device 40 (see FIG. 2) is provided.
  • the head 20 includes a pair of electrodes, a holding member that holds the pair of electrodes so as to project into the reaction chamber, and a nozzle 21 having a spout communicating with the reaction chamber.
  • the head 20 blows the plasma-generated processing gas (plasma gas) onto the surface of the work W by applying a voltage to the pair of electrodes and letting the processing gas pass through the reaction chamber and ejecting the processing gas from the nozzle 21.
  • the head moving device 31 is configured by, for example, a ball screw mechanism, and moves the head 20 in a direction parallel to the surface of the work W.
  • the head elevating device 32 is composed of, for example, a ball screw mechanism, and by elevating and lowering the head 20 in a direction perpendicular to the surface of the work W, the distance between the ejection port (tip portion) of the nozzle 21 and the surface (upper surface) of the work W can be increased. adjust.
  • the control device 40 is configured as a microprocessor centered on a CPU, and includes a ROM, RAM, an input / output interface, a communication interface, and the like in addition to the CPU.
  • a signal or the like from a position sensor that detects the position of the head 20 is input to the control device 40 via the input / output interface.
  • a control signal to the head 20 is input to the control device 40 via the input / output interface.
  • the control device 40 From the control device 40, a control signal to the head 20, a control signal to the head moving device 31, a control signal to the head elevating device 32, and the like are output via the input / output interface.
  • the control device 40 communicates with the processing condition determining device 50 of the present embodiment via the communication interface.
  • the control device 40 performs plasma processing on the work W by controlling the head 20, the head moving device 31, and the head elevating device 32 according to the processing conditions transmitted from the processing condition determining device 50.
  • the processing condition determining device 50 of the present embodiment determines the processing conditions for plasma processing, and is a general-purpose computer having a CPU, ROM, RAM, an external storage device such as a hard disk or a flash memory drive (SSD), and various interfaces. Is configured using.
  • a display device 57 such as a liquid crystal display and an input device 58 such as a keyboard and a mouse are connected to the processing condition determination device 50.
  • a water contact angle measuring device 60 for measuring the water contact angle ⁇ of the treated surface of the work W subjected to plasma treatment is also connected to the processing condition determining device 50. As shown in FIG.
  • the processing condition determination device 50 includes a processing unit 51 for determining the processing conditions for plasma processing, an input unit 52 for inputting various parameters necessary for determining the processing conditions, and various types of functional blocks.
  • a storage unit 53 for storing information is provided.
  • Each functional block functions as a unit of hardware such as a computer CPU, ROM, RAM, an external storage device, and various interfaces, and software including an installed program.
  • various parameters necessary for determining the processing conditions are input to the input unit 52.
  • various parameters include “adhesive strength”, “water contact angle”, “surface free energy”, “saturate contact angle”, “number of irradiations”, “heater ON / OFF”, and “nozzle type”.
  • “Type of adhesive” “Work base material”, “Work additive”, “Work melting point”, “Work thickness”, “Atmospheric temperature”, “Atmospheric humidity”, “Supply gas temperature”
  • Surrounding gas flow “surrounding gas air volume”, “electrode length”, “internal nozzle usage time”, “required processing speed”, etc.
  • Water contact angle and “surface free energy” are indicators of the wettability of the work surface.
  • “Saturate contact angle” indicates the minimum value of the water contact angle. "Number of irradiations” indicates the number of times of plasma irradiation. "Heater ON / OFF” indicates the presence or absence of heating of the shield gas used to protect the treated portion. "Nozzle type” indicates the type of the nozzle 21 used for the head 20. "Type of adhesive” indicates the type of adhesive to be applied to the work W after plasma treatment is applied to the work W (substrate). "Work base material” indicates a base material such as aluminum or polypropylene. “Work additive” indicates a material such as glass fiber or rubber. “Atmospheric temperature” indicates the temperature around the work during plasma processing. “Atmospheric humidity” indicates the humidity around the work during plasma processing.
  • the “supply gas temperature” indicates the temperature of the processing gas supplied to the plasma processing apparatus 10.
  • the “surrounding gas flow” indicates the direction of the gas around the work during plasma processing.
  • "Ambient gas air volume” indicates the air volume of the gas around the work during plasma processing.
  • Electrode length indicates the length of the electrode inside the device.
  • “Usage time of internal nozzle” indicates the usage time of the internal nozzle of the device.
  • the “requested processing speed” indicates the processing speed of the head requested by the user, that is, the lower limit speed Vmin of the work.
  • the processing unit 51 of the processing condition determining device 50 sets the target head speed Vtag, which is the target value of the moving speed of the head 20 in the X-axis direction, and the target head distance Ltag, which is the target value of the head distance L, as the processing conditions for plasma processing. Is set, and the set target head speed Vtag and target head distance Ltag are transmitted to the control device 40 of the plasma processing device 10.
  • the control device 40 controls the head moving device 31 and the head elevating device 32 so that the head 20 moves at the target head speed Vtag while maintaining the target head distance Ltag, and the head 20 so that plasma is irradiated from the nozzle 21. Plasma treatment is applied to the work W by controlling the work W.
  • FIG. 5 is a flowchart showing an example of the execution head speed determination process executed by the processing unit 51.
  • the processing unit 51 first sets the target head distance Ltag based on the melting point of the material of the work W input by the input unit 52, the supply gas temperature, the atmospheric temperature, and the like (step S100).
  • the shortest head distance Lmin is set for the target head distance Ltag within a range in which the work W does not melt even if plasma irradiation is continued.
  • the processing unit 51 sets a predetermined predetermined speed Vset for the target head speed Vtag (step S110).
  • the specified speed Vset is set to, for example, a speed near the maximum speed of the head moving device 31.
  • the processing unit 51 sets the repetition number n to the value 1 (step S120), and transmits a command signal including the target head distance Ltag and the target head speed Vtag to the control device 40 (step S130).
  • the control device 40 that has received the command signal controls the head moving device 31 and the head elevating device 32 so that the head 20 moves at the target head speed Vtag while maintaining the target head distance Ltag, and plasma is generated on the surface of the work W.
  • the head 20 is controlled so as to be irradiated (irradiation step).
  • the processing unit 51 acquires the water contact angle ⁇ with respect to the processed surface of the work W after plasma processing (step S140).
  • a water contact angle measuring device 60 drops water droplets on the treated surface of the work W, the dropped water droplets are photographed from the side surface, and the obtained image is processed to process the water contact angle ⁇ . It is performed by measuring (measurement step).
  • the processing unit 51 determines whether or not the number of repetitions n is a value of 2 or more (step S150). When it is determined that the number of repetitions is less than the value 2, that is, the value is 1, the number of repetitions n is incremented by the value 1 (step S160), returned to step S130, and overlapped with the processing surface of the work W irradiated with plasma.
  • the plasma treatment is repeated so that the plasma is irradiated, and the water contact angle ⁇ of the treated surface is acquired (step S140).
  • step S150 determines in step S150 that the number of repetitions n is 2 or more
  • the water contact angle ⁇ acquired this time is subtracted from the previously acquired water contact angle (previous ⁇ ) to calculate the amount of change in water contact angle ⁇ .
  • Step S170 determines whether or not the water contact angle change amount ⁇ is a value near the value 0 (step S180). This determination is a process of determining whether or not the water contact angle ⁇ has reached the saturate contact angle ⁇ th as a result of repeating the plasma treatment on the processed surface of the work W.
  • Step S160 determines that the water contact angle change amount ⁇ is not a value near the value 0
  • the processing unit 51 determines that the water contact angle change amount ⁇ is a value near the value 0, the value obtained by subtracting the value 1 from the number of repetitions n and dividing the specified speed Vset (target head speed Vtag) is used.
  • the required speed is set to Vreq (step S190).
  • the required speed Vreq is a head required for the surface state (water contact angle ⁇ ) of the treated surface of the work W to be saturated (reaching the saturated contact angle ⁇ th) by executing one plasma treatment (irradiation step).
  • the moving speed is 20.
  • FIG. 6 is an explanatory diagram showing the relationship between the number of repeated plasma treatments and the water contact angle of the treated surface.
  • the processing unit 51 determines whether or not the required speed Vreq is equal to or greater than the lower limit speed Vmin (step S200).
  • the lower limit speed Vmin is the lower limit value of the processing speed requested by the user from the production tact or the like.
  • the processing unit 51 sets the required speed Vreq to the execution head speed V (step S210), and ends the execution head speed determination process.
  • the processing unit 51 determines that the required speed Vreq is not the lower limit speed Vmin or more and is less than the lower limit speed Vmin, the lower limit speed Vmin is set in the execution head speed V (step S220), and the execution head speed determination process is performed. finish.
  • FIG. 7 is a flowchart showing an example of the execution head distance determination process.
  • the execution head distance determination process is executed after the execution of the execution head speed determination process.
  • the processing unit 51 determines whether or not the required speed Vreq set in the execution head speed determination process is less than the lower limit speed Vmin (step S300).
  • the processing unit 51 sets the shortest head distance Lmin set in step S100 of the execution head speed determination process to the execution head distance L. (Step S310), the execution head distance determination process is terminated.
  • the processing unit 51 determines that the required speed Vreq is less than the lower limit speed Vmin, the processing unit 51 sets the lower limit speed Vmin to the target head speed Vtag (step S320), and sets the target head distance Ltag, for example, the execution head speed determination process.
  • the head distance Lmin used in step S100 of the above is set (step S330).
  • the processing unit 51 transmits a command signal including the target head distance Ltag and the target head speed Vtag to the control device 40 to irradiate the processing surface of the new work W with plasma (step S340).
  • the processing unit 51 acquires the water contact angle ⁇ with respect to the processed surface of the work W after the plasma treatment from the water contact angle measuring device 60 (step S350).
  • the processing unit 51 acquires the water contact angle ⁇ , it determines whether or not the acquired water contact angle ⁇ is an angle near the saturate contact angle ⁇ th (step S360).
  • the saturate contact angle ⁇ th is, for example, the water contact angle acquired in step S140 when a positive determination is made in step S180 in the execution head speed determination process described above.
  • the processing unit 51 determines that the water contact angle ⁇ is not an angle near the saturate contact angle ⁇ th, the processing unit 51 sets a new target head distance Ltag obtained by subtracting a predetermined amount ⁇ L from the current target head distance Ltag (step S370).
  • the processing unit 51 performs plasma processing on the new work W each time while gradually shortening the target head distance Ltag until the water contact angle ⁇ becomes an angle near the saturate contact angle ⁇ th in step S360. Then, when the processing unit 51 determines that the water contact angle ⁇ has reached an angle near the saturated contact angle ⁇ th, the processing unit 51 sets the target head distance Ltag currently set for the execution head distance L (step S380), and executes the execution. The head distance determination process is terminated.
  • FIG. 8 is an explanatory diagram showing the relationship between the head distance and the water contact angle of the treated surface. When the required speed Vreq is less than the lower limit speed Vmin, the target head speed Vtag is determined to be the lower limit speed Vmin.
  • the target head speed Vtag is determined to be the lower limit speed Vmin
  • the target head distance Ltag is gradually shortened, and plasma treatment is applied to the new work W each time to process the work W.
  • the optimum head distance that can complete the surface modification of the work W by one plasma treatment at the lower limit speed Vmin is obtained. Thereby, it is possible to correspond to the processing speed of the head 20 requested by the user.
  • the head 20 of the present embodiment corresponds to the head
  • the work W corresponds to the object.
  • the plasma processing device 10 corresponds to the irradiation unit that executes the irradiation step
  • the water contact angle measuring device 60 corresponds to the measurement unit that executes the measurement step
  • the processes of steps S150 to S190 of the execution head speed determination process are executed.
  • the processing unit 51 that performs the processing corresponds to the calculation unit
  • the processing unit 51 that executes the processing in step S210 of the execution head speed determination processing corresponds to the determination unit.
  • the plasma processing device 10 of the present embodiment includes a head moving device 31 for moving the head 20 in the horizontal direction and a head raising / lowering device 32 for raising and lowering the head 20.
  • the plasma processing apparatus 110 according to another embodiment includes an articulated robot that moves the head 20 in a three-dimensional space.
  • FIG. 9 is a schematic configuration diagram of a plasma processing apparatus according to another embodiment. As shown in the figure, the articulated robot of the plasma processing apparatus 110 of another embodiment connects the base B, the first to fourth links L1 to L4 connected in series to the base B, and each link. It is configured as a vertical articulated robot including the first to fifth joint axes J1 to J5 and the head 20 connected to the tip link (fourth link L4).
  • the articulated robot is not limited to the vertical articulated robot, and may be any type of robot such as a horizontal articulated robot.
  • the calculation step may calculate the required speed based on the value obtained by dividing the target speed by the number of executions. In this way, the required speed can be obtained by a simpler calculation.
  • the measurement step may be to measure the water contact angle on the surface of the object as the surface state of the object. In this way, the surface condition of the object can be better measured.
  • the determination step may determine the target distance based on the melting point of the object. In this way, an appropriate distance can be determined as the target distance of the head so that the work is not damaged by the irradiation of plasma.
  • the lower limit speed is determined to be the target speed of the head, and the irradiation is performed at the lower limit speed.
  • the step is executed, the required distance required for the surface state of the object measured in the measuring step to be saturated may be derived, and the derived required distance may be determined as the target distance.
  • the present disclosure is in the form of a processing condition determining method, but it may be in the form of a processing condition determining device.
  • This disclosure can be used in the manufacturing industry of plasma processing equipment and the like.
  • 10,110 Plasma processing device 20 heads, 21 nozzles, 31 head moving device, 32 head elevating device, 40 control device, 50 processing condition determination device, 51 processing unit, 52 input unit, 53 storage unit, 57 display device, 58 Input device, 60 water contact angle measuring device, B base, J1 to J5 1st to 5th joint axes, L1 to L4 1st to 4th links, W work.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Arc Welding In General (AREA)

Abstract

La présente invention concerne un procédé de détermination d'état de traitement pour un traitement à base de plasma comprenant un processus d'irradiation dans lequel une tête se déplace à une vitesse cible prédéterminée tout en maintenant une distance cible prédéterminée à partir d'une pièce à travailler et une surface de la pièce à travailler est irradiée avec un plasma à partir de la tête ; un processus de mesure dans lequel l'état de surface de la pièce à travailler après que le processus d'irradiation soit effectué est mesuré ; un processus de calcul dans lequel le processus d'irradiation et le processus de mesure sont réalisés de manière répétée et une vitesse requise à laquelle l'état de surface de la pièce à travailler est saturé avec un tour de processus d'irradiation est calculée sur la base du nombre de fois où le procédé d'irradiation a besoin d'être effectué jusqu'à ce que l'état de surface de la pièce ait été saturé ; et une étape de détermination dans laquelle la vitesse requise est déterminée comme étant la vitesse de traitement de la tête.
PCT/JP2020/031145 2020-08-18 2020-08-18 Procédé de détermination d'état de traitement et dispositif de détermination d'état de traitement pour traitement à base de plasma WO2022038679A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022543845A JP7481460B2 (ja) 2020-08-18 2020-08-18 プラズマによる処理の処理条件決定方法および処理条件決定装置
CN202080102821.XA CN115804249A (zh) 2020-08-18 2020-08-18 基于等离子体的处理的处理条件决定方法及处理条件决定装置
DE112020007520.6T DE112020007520T5 (de) 2020-08-18 2020-08-18 Bearbeitungs-Bedingung-Bestimmungs-Verfahren und Bearbeitungs-Bedingung-Bestimmungs-Vorrichtung für plasmabasierte Bearbeitung
PCT/JP2020/031145 WO2022038679A1 (fr) 2020-08-18 2020-08-18 Procédé de détermination d'état de traitement et dispositif de détermination d'état de traitement pour traitement à base de plasma

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PCT/JP2020/031145 WO2022038679A1 (fr) 2020-08-18 2020-08-18 Procédé de détermination d'état de traitement et dispositif de détermination d'état de traitement pour traitement à base de plasma

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091641A (ja) * 2006-10-02 2008-04-17 Seiko Epson Corp プラズマ処理装置
JP2010141193A (ja) * 2008-12-12 2010-06-24 Seiko Epson Corp プラズマ処理装置
JP2010147140A (ja) * 2008-12-17 2010-07-01 Seiko Epson Corp プラズマ処理装置及びプラズマ処理方法
JP2015165580A (ja) * 2015-04-10 2015-09-17 セイコーエプソン株式会社 ラジカル反応による無歪精密加工方法
WO2019003259A1 (fr) * 2017-06-26 2019-01-03 株式会社Ｆｕｊｉ Machine de traitement au plasma

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4344674B2 (ja) 2004-10-18 2009-10-14 株式会社日立製作所 プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091641A (ja) * 2006-10-02 2008-04-17 Seiko Epson Corp プラズマ処理装置
JP2010141193A (ja) * 2008-12-12 2010-06-24 Seiko Epson Corp プラズマ処理装置
JP2010147140A (ja) * 2008-12-17 2010-07-01 Seiko Epson Corp プラズマ処理装置及びプラズマ処理方法
JP2015165580A (ja) * 2015-04-10 2015-09-17 セイコーエプソン株式会社 ラジカル反応による無歪精密加工方法
WO2019003259A1 (fr) * 2017-06-26 2019-01-03 株式会社Ｆｕｊｉ Machine de traitement au plasma

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CN115804249A (zh) 2023-03-14
JP7481460B2 (ja) 2024-05-10
JPWO2022038679A1 (fr) 2022-02-24

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