WO2022014344A1 - Matériau de formation de film mince, film mince et procédé de production de film mince - Google Patents
Matériau de formation de film mince, film mince et procédé de production de film mince Download PDFInfo
- Publication number
- WO2022014344A1 WO2022014344A1 PCT/JP2021/024953 JP2021024953W WO2022014344A1 WO 2022014344 A1 WO2022014344 A1 WO 2022014344A1 JP 2021024953 W JP2021024953 W JP 2021024953W WO 2022014344 A1 WO2022014344 A1 WO 2022014344A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- raw material
- yttrium
- group
- forming
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims description 183
- 239000000463 material Substances 0.000 title abstract description 4
- 238000000034 method Methods 0.000 title description 56
- -1 yttrium compound Chemical class 0.000 claims abstract description 105
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 97
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 39
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 27
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 16
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims description 105
- 239000007789 gas Substances 0.000 claims description 86
- 239000002243 precursor Substances 0.000 claims description 58
- 238000004519 manufacturing process Methods 0.000 claims description 47
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 24
- 230000008016 vaporization Effects 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 29
- 238000000231 atomic layer deposition Methods 0.000 description 26
- 239000007788 liquid Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 230000008021 deposition Effects 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 238000005160 1H NMR spectroscopy Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000005979 thermal decomposition reaction Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000013110 organic ligand Substances 0.000 description 7
- 238000009834 vaporization Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 239000003446 ligand Substances 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 235000015067 sauces Nutrition 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000000725 suspension Substances 0.000 description 5
- 150000003613 toluenes Chemical class 0.000 description 5
- 150000003748 yttrium compounds Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 229940125904 compound 1 Drugs 0.000 description 4
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 3
- 239000012038 nucleophile Substances 0.000 description 3
- 239000012434 nucleophilic reagent Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- FTFYDDRPCCMKBT-UHFFFAOYSA-N 1-butylcyclopenta-1,3-diene Chemical compound CCCCC1=CC=CC1 FTFYDDRPCCMKBT-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- ILPNRWUGFSPGAA-UHFFFAOYSA-N heptane-2,4-dione Chemical compound CCCC(=O)CC(C)=O ILPNRWUGFSPGAA-UHFFFAOYSA-N 0.000 description 2
- NDOGLIPWGGRQCO-UHFFFAOYSA-N hexane-2,4-dione Chemical compound CCC(=O)CC(C)=O NDOGLIPWGGRQCO-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910017053 inorganic salt Inorganic materials 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000006864 oxidative decomposition reaction Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- BHRZNVHARXXAHW-UHFFFAOYSA-N sec-butylamine Chemical compound CCC(C)N BHRZNVHARXXAHW-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 2
- 239000011345 viscous material Substances 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- BVPKYBMUQDZTJH-UHFFFAOYSA-N 1,1,1-trifluoro-5,5-dimethylhexane-2,4-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(F)(F)F BVPKYBMUQDZTJH-UHFFFAOYSA-N 0.000 description 1
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 1
- VNPQQEYMXYCAEZ-UHFFFAOYSA-N 1,2,3,4-tetramethylcyclopenta-1,3-diene Chemical compound CC1=C(C)C(C)=C(C)C1 VNPQQEYMXYCAEZ-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- BGYBONWLWSMGNV-UHFFFAOYSA-N 1,4,7,10,13,16,19,22-octaoxacyclotetracosane Chemical compound C1COCCOCCOCCOCCOCCOCCOCCO1 BGYBONWLWSMGNV-UHFFFAOYSA-N 0.000 description 1
- MIAJKNFXBPVTCU-UHFFFAOYSA-N 1-(2-methoxyethoxy)-2,2,6,6-tetramethylheptane-3,5-dione Chemical compound COCCOCC(C)(C)C(=O)CC(=O)C(C)(C)C MIAJKNFXBPVTCU-UHFFFAOYSA-N 0.000 description 1
- SIUWDFVMEASCRP-UHFFFAOYSA-N 1-(2-methoxyethoxy)-2-methylpropan-2-ol Chemical compound COCCOCC(C)(C)O SIUWDFVMEASCRP-UHFFFAOYSA-N 0.000 description 1
- GHJATKVLNMETBA-UHFFFAOYSA-N 1-(2-methylpropyl)cyclopenta-1,3-diene Chemical compound CC(C)CC1=CC=CC1 GHJATKVLNMETBA-UHFFFAOYSA-N 0.000 description 1
- SXCKDSXGLKRTSY-UHFFFAOYSA-N 1-(diethylamino)-2-methylpentan-2-ol Chemical compound CCCC(C)(O)CN(CC)CC SXCKDSXGLKRTSY-UHFFFAOYSA-N 0.000 description 1
- PDGHGLMSHZDIEW-UHFFFAOYSA-N 1-(dimethylamino)-2-methylpentan-2-ol Chemical compound CN(C)CC(CCC)(O)C PDGHGLMSHZDIEW-UHFFFAOYSA-N 0.000 description 1
- MZLDACGYLPYWMZ-UHFFFAOYSA-N 1-(dimethylamino)pentan-2-ol Chemical compound CCCC(O)CN(C)C MZLDACGYLPYWMZ-UHFFFAOYSA-N 0.000 description 1
- ONBQEOIKXPHGMB-VBSBHUPXSA-N 1-[2-[(2s,3r,4s,5r)-3,4-dihydroxy-5-(hydroxymethyl)oxolan-2-yl]oxy-4,6-dihydroxyphenyl]-3-(4-hydroxyphenyl)propan-1-one Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1OC1=CC(O)=CC(O)=C1C(=O)CCC1=CC=C(O)C=C1 ONBQEOIKXPHGMB-VBSBHUPXSA-N 0.000 description 1
- JCALRHVFTLBTOZ-UHFFFAOYSA-N 1-butoxy-2-methylpropan-2-ol Chemical compound CCCCOCC(C)(C)O JCALRHVFTLBTOZ-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- BCYNAHGOLUTMDM-UHFFFAOYSA-N 1-ethoxy-2-methylpropan-2-ol Chemical compound CCOCC(C)(C)O BCYNAHGOLUTMDM-UHFFFAOYSA-N 0.000 description 1
- IQSUNBLELDRPEY-UHFFFAOYSA-N 1-ethylcyclopenta-1,3-diene Chemical compound CCC1=CC=CC1 IQSUNBLELDRPEY-UHFFFAOYSA-N 0.000 description 1
- MXUXZWFVAPTPAG-UHFFFAOYSA-N 1-methoxy-2-methylpropan-2-ol Chemical compound COCC(C)(C)O MXUXZWFVAPTPAG-UHFFFAOYSA-N 0.000 description 1
- RJDCXHOZXHGOOC-UHFFFAOYSA-N 1-methoxyheptane-3,5-dione Chemical compound COCCC(CC(CC)=O)=O RJDCXHOZXHGOOC-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- MWQKURVBJZAOSC-UHFFFAOYSA-N 1-propan-2-ylcyclopenta-1,3-diene Chemical compound CC(C)C1=CC=CC1 MWQKURVBJZAOSC-UHFFFAOYSA-N 0.000 description 1
- RZPAXISDLOEXPI-UHFFFAOYSA-N 1-propylcyclopenta-1,3-diene Chemical compound CCCC1=CC=CC1 RZPAXISDLOEXPI-UHFFFAOYSA-N 0.000 description 1
- NWFVDKHZNWEXAD-UHFFFAOYSA-N 1-tert-butylcyclopenta-1,3-diene Chemical compound CC(C)(C)C1=CC=CC1 NWFVDKHZNWEXAD-UHFFFAOYSA-N 0.000 description 1
- XEZNGIUYQVAUSS-UHFFFAOYSA-N 18-crown-6 Chemical compound C1COCCOCCOCCOCCOCCO1 XEZNGIUYQVAUSS-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
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- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 description 1
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- NFWSQSCIDYBUOU-UHFFFAOYSA-N methylcyclopentadiene Chemical compound CC1=CC=CC1 NFWSQSCIDYBUOU-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- DWFKOMDBEKIATP-UHFFFAOYSA-N n'-[2-[2-(dimethylamino)ethyl-methylamino]ethyl]-n,n,n'-trimethylethane-1,2-diamine Chemical compound CN(C)CCN(C)CCN(C)CCN(C)C DWFKOMDBEKIATP-UHFFFAOYSA-N 0.000 description 1
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- GVWISOJSERXQBM-UHFFFAOYSA-N n-methylpropan-1-amine Chemical class CCCNC GVWISOJSERXQBM-UHFFFAOYSA-N 0.000 description 1
- XHFGWHUWQXTGAT-UHFFFAOYSA-N n-methylpropan-2-amine Chemical class CNC(C)C XHFGWHUWQXTGAT-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- GJYXGIIWJFZCLN-UHFFFAOYSA-N octane-2,4-dione Chemical compound CCCCC(=O)CC(C)=O GJYXGIIWJFZCLN-UHFFFAOYSA-N 0.000 description 1
- BTNXBLUGMAMSSH-UHFFFAOYSA-N octanedinitrile Chemical compound N#CCCCCCCC#N BTNXBLUGMAMSSH-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- OOFGXDQWDNJDIS-UHFFFAOYSA-N oxathiolane Chemical compound C1COSC1 OOFGXDQWDNJDIS-UHFFFAOYSA-N 0.000 description 1
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- GTCCGKPBSJZVRZ-UHFFFAOYSA-N pentane-2,4-diol Chemical compound CC(O)CC(C)O GTCCGKPBSJZVRZ-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- XRVCFZPJAHWYTB-UHFFFAOYSA-N prenderol Chemical compound CCC(CC)(CO)CO XRVCFZPJAHWYTB-UHFFFAOYSA-N 0.000 description 1
- 229950006800 prenderol Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N tertiary amyl alcohol Natural products CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C225/00—Compounds containing amino groups and doubly—bound oxygen atoms bound to the same carbon skeleton, at least one of the doubly—bound oxygen atoms not being part of a —CHO group, e.g. amino ketones
- C07C225/02—Compounds containing amino groups and doubly—bound oxygen atoms bound to the same carbon skeleton, at least one of the doubly—bound oxygen atoms not being part of a —CHO group, e.g. amino ketones having amino groups bound to acyclic carbon atoms of the carbon skeleton
- C07C225/14—Compounds containing amino groups and doubly—bound oxygen atoms bound to the same carbon skeleton, at least one of the doubly—bound oxygen atoms not being part of a —CHO group, e.g. amino ketones having amino groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being unsaturated
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
Definitions
- the present invention relates to a raw material for forming a thin film containing an yttrium compound having a specific structure, a thin film obtained by using the raw material, and a method for producing the same.
- a metal-containing complex is being studied as a raw material for forming a thin film capable of forming a thin film such as a metal nitride, a metal oxide, or a metal-containing film on a substrate such as silicon.
- Yttrium is used as a component for constituting a compound semiconductor, and various compounds have been reported as a raw material for forming a thin film for producing a thin film containing yttrium.
- Examples of the thin film manufacturing method include a sputtering method, an ion plating method, a metal organic compound decomposition (MOD: Metal Organic Decomposition) method such as a coating thermal decomposition method and a solgel method, and a chemical vapor deposition (CVD).
- Examples include the method, atomic layer deposition (ALD: Atomic Layer Deposition) method, and the like. Among these, the CVD method and the ALD method are mainly used because the quality of the obtained thin film is good.
- Patent Document 1 As a raw material for forming a thin film for forming a thin film containing yttrium, for example, in Patent Document 1, -R 4- NR 5 R 6 (R 4 is an alkylene crosslinked group, and R 5 and R 6 are formed on the N side chain.
- R 4 is an alkylene crosslinked group, and R 5 and R 6 are formed on the N side chain.
- Patent Document 2 proposes a metal-containing complex containing a polydentate ketoimin ligand and an alkoxy ligand or an amino ligand as a precursor for forming a metal film or a metal oxide film. Has been done.
- Patent Document 3 discloses that an yttrium compound having a ⁇ -ketoimine ligand is used as a catalyst for conjugated diene polymerization.
- Japanese Patent No. 4680953 Japanese Patent No. 5698161 (Japanese Unexamined Patent Publication No. 2012-153688) Japanese Patent No. 6020257 (Japanese Unexamined Patent Publication No. 2014-166967)
- the raw material for thin film formation is required to have a low melting point, high volatility, high thermal stability, and the ability to form a high quality thin film with a small amount of residual carbon.
- the raw materials for forming a thin film containing the yttrium compound proposed in Patent Documents 1 and 2 have not satisfied these requirements.
- Patent Document 3 does not contain any description suggesting that an yttrium compound having a ⁇ -ketoimine ligand is used as a raw material for forming a thin film.
- an object of the present invention is to provide a raw material for forming a thin film containing an yttrium compound, which has a low melting point, high volatility and thermal stability, and can be suitably used for a CVD method or an ALD method. ..
- Another object of the present invention is to provide a thin film obtained by using the thin film forming raw material and a method for producing the same.
- the present invention is a raw material for forming a thin film containing an yttrium compound represented by the following general formula (1) or (2).
- R 1 and R 3 independently represent an alkyl group having 1 to 6 carbon atoms or an alkoxyalkyl group having 2 to 6 carbon atoms
- R 2 is a hydrogen atom or 1 carbon atom
- R 4 represents an alkyl group having 1 to 3 carbon atoms
- R 4 represents an alkyl group having 1 to 5 carbon atoms
- R 5 represents an alkyl group having 1 to 3 carbon atoms
- a plurality of R 1 , R 2 , and R. 3 , R 4 and R 5 may be the same or different from each other.
- R 6 and R 8 independently represent an alkyl group having 1 to 6 carbon atoms or an alkoxyalkyl group having 2 to 6 carbon atoms, and R 7 is a hydrogen atom or 1 carbon atom. Representing an alkyl group of ⁇ 3, the plurality of R 6 , R 7 and R 8 may be the same or different, respectively, except that at least one of R 6 and R 8 is carbon. Represents an alkoxyalkyl group having 2 to 6 atoms.
- R 1 and R 3 are isopropyl groups
- R 2 is a hydrogen atom
- R 4 is an ethylene group
- R 5 is a methyl group.
- the present invention is a step of introducing a raw material gas obtained by vaporizing the raw material for forming a thin film into a film forming chamber in which a substrate is installed, and a precursor by depositing an yttrium compound in the raw material gas on the surface of the substrate.
- a thin film including a step of forming a thin film and a step of introducing a reactive gas into a film forming chamber and reacting the precursor thin film with the reactive gas to form a thin film containing an yttrium atom on the surface of the substrate. It is a manufacturing method of.
- the reactive gas is an oxidizing gas and the thin film containing an yttrium atom is yttrium oxide.
- the oxidizing gas is a gas containing oxygen, ozone or water vapor.
- the precursor thin film it is preferable to react the precursor thin film with the reactive gas in the range of 100 ° C to 400 ° C.
- a specific yttrium compound by containing a specific yttrium compound, it is possible to provide a raw material for forming a thin film having a low melting point and high volatility and thermal stability. Further, by using the raw material for forming a thin film of the present invention, a high-quality yttrium-containing thin film having a small residual carbon content can be produced by using a CVD method, particularly an ALD method.
- the raw material for forming a thin film of the present invention contains an yttrium compound represented by the above general formula (1) or (2).
- R 1 and R 3 independently represent an alkyl group having 1 to 6 carbon atoms or an alkoxyalkyl group having 2 to 6 carbon atoms
- R 2 is a hydrogen atom or
- R 4 represents an alkyl group having 1 to 3 carbon atoms,
- R 4 represents an alkylandyl group having 1 to 5 carbon atoms,
- R 5 represents an alkyl group having 1 to 3 carbon atoms, and a plurality of R 1 ,.
- R 2 , R 3 , R 4 and R 5 may be the same or different from each other.
- R 6 and R 8 independently represent an alkyl group having 1 to 6 carbon atoms or an alkoxyalkyl group having 2 to 6 carbon atoms
- R 7 is a hydrogen atom or a hydrogen atom or Representing an alkyl group having 1 to 3 carbon atoms
- the plurality of R 6 , R 7 and R 8 may be the same or different from each other.
- at least one of R 6 and R 8 represents an alkoxyalkyl group having 2 to 6 carbon atoms.
- the melting point is preferably 100 ° C. or lower. It is more preferable that it is liquid at room temperature. Further, the temperature when the yttrium compound is reduced by 50% by mass by a reduced pressure thermogravimetric differential thermal analyzer (TG-DTA) is preferably 240 ° C. or lower.
- TG-DTA thermogravimetric differential thermal analyzer
- the thermal decomposition start temperature of the yttrium compound by the differential scanning calorimeter (DSC) is preferably 250 ° C. or higher, and more preferably 300 ° C. or higher.
- examples of the alkyl group having 1 to 6 carbon atoms represented by R 1 and R 3 include a methyl group, an ethyl group, an n-propyl group, an isopropyl group and an n-butyl group.
- examples thereof include sec-butyl group, tert-butyl group, isobutyl group, n-pentyl group, sec-pentyl group, tert-pentyl group, isopentyl group, neopentyl group and hexyl group.
- an yttrium compound in which R 1 and R 3 are alkyl groups having 1 to 4 carbon atoms is preferable, and R 1 is an ethyl group and isopropyl.
- An yttrium compound which is a group or a tert-butyl group and R 3 is an ethyl group or an isopropyl group is more preferable, and an yttrium compound in which R 1 and R 3 are an isopropyl group is most preferable.
- examples of the alkoxyalkyl group having 2 to 6 carbon atoms represented by R 1 and R 3 include a methoxymethyl group, a methoxyethyl group, an ethoxymethyl group, an ethoxyethyl group and a methoxyisopropyl group.
- Examples thereof include a group, a methoxypropyl group, a methoxyisobutyl group, a methoxysec-butyl group, a methoxytert-butyl group, an ethoxyisopropyl group, an ethoxybutyl group, an ethoxyisobutyl group, an ethoxysec-butyl group, an ethoxytert-butyl group and the like. From the viewpoint that the effect of the present invention is remarkable , the yttrium compound in which R 1 and R 3 are methoxyisopropyl groups or methoxytert-butyl is preferable in the above general formula (1).
- examples of the alkyl group having 1 to 3 carbon atoms represented by R 2 and R 5 include the above-mentioned alkyl groups having 1 to 3 carbon atoms. From the viewpoint that the effect of the present invention is remarkable , the yttrium compound in which R 2 is a hydrogen atom and R 5 is a methyl group is preferable in the above general formula (1).
- examples of the alkanediyl group having 1 to 5 carbon atoms represented by R 4 include a methylene group, an ethylene group, a propane-1,3-diyl group, and a propane-1,2-.
- examples thereof include a diyl group, a butylene group, a butane-1,2-diyl group, a butane-1,3-diyl group, a butane-1,4-diyl group and the like. From the viewpoint that the effect of the present invention is remarkable , the yttrium compound in which R 4 is an ethylene group or a propane-1,2-diyl group is preferable in the above general formula (1).
- examples of the alkyl group having 1 to 6 carbon atoms and the alkoxyalkyl group having 2 to 6 carbon atoms represented by R 6 and R 8 are the same as those described above.
- examples of the alkyl group having 1 to 3 carbon atoms represented by R 7 are the same as those described above.
- the plurality of R 6 , R 7 and R 8 may be the same or different, but at least one of the plurality of R 6 and R 8 may be different.
- an yttrium compound in which two or more of the plurality of R 6 and R 8 are alkoxyalkyl groups having 2 to 6 carbon atoms is preferable, and three of the plurality of R 6 and R 8 are carbon.
- An yttrium compound which is an alkoxyalkyl group having 2 to 6 atoms is more preferable.
- the yttrium compound represented by the above general formula (1) or (2) As a preferable specific example of the yttrium compound represented by the above general formula (1) or (2), the following No. 1 to No. 16 yttrium compounds are mentioned, but the invention is not limited to these yttrium compounds.
- the following No. 1 to No. In the yttrium compound 16 "Me” represents a methyl group, “Et” represents an ethyl group, “iPr” represents an isopropyl group, and "tBu” represents a tert-butyl group.
- the yttrium compound of the present invention can be produced by utilizing a well-known reaction.
- R 1 is a methyl group
- R 2 is a hydrogen atom
- R 3 is a methyl group
- R 4 is a methylene group
- R 5 is a methyl group.
- the compound can be obtained by reacting ittrium-tris-trimethylsilylamide with 4-methoxymethylamino-3-penten-2-one in a solvent, removing the solvent, and purifying by distillation.
- the yttrium compound in which R 6 is a methoxytert-butyl group, R 7 is a hydrogen atom and R 8 is an isopropyl group is an yttrium-tris-trimethylsilylamide in a solvent. It can be obtained by reacting with 5-amino-7-methoxy-4-hepten-3-one, removing the solvent, and purifying by distillation.
- the raw material for forming a thin film of the present invention may be any as long as it contains the yttrium compound represented by the above general formula (1) or (2), and its composition varies depending on the type of the target thin film.
- the raw material for forming a thin film of the present invention does not contain a compound containing a metal other than yttrium and a compound containing a semimetal.
- the raw material for forming a thin film of the present invention is in addition to the yttrium compound represented by the above general formula (1) or (2).
- a compound containing a desired metal and / or a compound containing a semimetal (hereinafter, may be referred to as "another precursor") can be contained.
- the other precursors that can be used together with the yttrium compound represented by the above general formula (1) or (2) are not particularly limited.
- a well-known general precursor used as a raw material for forming a thin film for a CVD method can be used.
- the other precursors described above include, for example, one or two types selected from the group consisting of compounds used as organic ligands such as alcohol compounds, glycol compounds, ⁇ -diketone compounds, cyclopentadiene compounds, and organic amine compounds.
- organic ligands such as alcohol compounds, glycol compounds, ⁇ -diketone compounds, cyclopentadiene compounds, and organic amine compounds.
- the above and compounds with silicon and metals can be mentioned.
- the metal species of precursors include lithium, sodium, magnesium, aluminum, potassium, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, lutetium, strontium, and ittrium.
- Examples of the alcohol compound used as the organic ligand of the other precursors described above include methanol, ethanol, propanol, isopropyl alcohol, butanol, sec-butyl alcohol, isobutyl alcohol, tert-butyl alcohol, pentyl alcohol and isopentyl alcohol.
- Tart-alkyl alcohols such as pentyl alcohol; 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, 2- (2-methoxyethoxy) ethanol, 2-methoxy-1-methylethanol, 2-methoxy-1 , 1-dimethylethanol, 2-ethoxy-1,1-dimethylethanol, 2-isopropoxy-1,1-dimethylethanol, 2-butoxy-1,1-dimethylethanol, 2- (2-methoxyethoxy) -1 , 1-Dimethylethanol, 2-propoxy-1,1-diethylethanol, 2-sec-butoxy-1,1-diethylethanol, 3-methoxy-1,1-dimethylpropanol and other ether alcohols; dimethylaminoethanol, Ethylmethylaminoethanol, diethylaminoethanol, dimethylamino-2-pentanol, ethylmethylamino-2-pentanol, dimethylamino-2-methyl-2-pentanol, ethyl
- glycol compound used as the organic ligand of the other precursors described above examples include 1,2-ethanediol, 1,2-propanediol, 1,3-propanediol, 2,4-hexanediol, and 2, 2-Dimethyl-1,3-propanediol, 2,2-diethyl-1,3-propanediol, 1,3-butanediol, 2,4-butanediol, 2,2-diethyl-1,3-butanediol , 2-Ethyl-2-butyl-1,3-propanediol, 2,4-pentanediol, 2-methyl-1,3-propanediol, 2-methyl-2,4-pentanediol, 2,4-hexane Examples thereof include diol, 2,4-dimethyl-2,4-pentanediol and the like.
- Examples of the ⁇ -diketone compound used as the organic ligand of the other precursors described above include acetylacetone, hexane-2,4-dione, 5-methylhexane-2,4-dione, and heptane-2,4-dione.
- cyclopentadiene compound used as the organic ligand of the other precursors described above examples include cyclopentadiene, methylcyclopentadiene, ethylcyclopentadiene, propylcyclopentadiene, isopropylcyclopentadiene, butylcyclopentadiene, and second butylcyclopentadiene.
- examples thereof include isobutylcyclopentadiene, tert-butylcyclopentadiene, dimethylcyclopentadiene, tetramethylcyclopentadiene and the like.
- Examples of the organic amine compound used as the organic ligand of the above other precursors include methylamine, ethylamine, propylamine, isopropylamine, butylamine, sec-butylamine, tert-butylamine, isobutylamine, dimethylamine, diethylamine and dipropyl. Examples thereof include amines, diisopropylamines, ethylmethylamines, propylmethylamines and isopropylmethylamines.
- a precursor can be produced by reacting the above-mentioned inorganic salt of a metal or a hydrate thereof with an alkali metal alkoxide of the alcohol compound.
- examples of the inorganic salt of the metal or its hydrate include metal halides and nitrates
- examples of the alkali metal alkoxide include sodium alkoxide, lithium alkoxide, potassium alkoxide and the like. Can be done.
- a method of vaporizing and supplying the raw material for thin film formation independently (hereinafter, also referred to as “single source method”) and a multi-component raw material are desired in advance.
- a method of vaporizing and supplying a mixed raw material mixed with the composition of (hereinafter, may be referred to as "cocktail sauce method”).
- a compound whose thermal and / or oxidative decomposition behavior is similar to that of the yttrium compound represented by the general formula (1) or (2) is preferable.
- a mixture of the yttrium compound represented by the above general formula (1) or (2) and another precursor or a mixed solution obtained by dissolving the mixture in an organic solvent is made into a thin film. It can be used as a raw material for formation.
- organic solvent a well-known general organic solvent can be used without any particular limitation.
- organic solvent include acetate esters such as ethyl acetate, butyl acetate and methoxyethyl acetate; ethers such as tetrahydrofuran, tetrahydropyran, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dibutyl ether and dioxane; methyl.
- Ketones such as butyl ketone, methylisobutylketone, ethylbutylketone, dipropylketone, diisobutylketone, methylamylketone, cyclohexanone, methylcyclohexanone; hexane, cyclohexane, methylcyclohexane, dimethylcyclohexane, ethylcyclohexane, heptane, octane, toluene, Hydrocarbons such as xylene; 1-cyanopropane, 1-cyanobutane, 1-cyanohexane, cyanocyclohexane, cyanobenzene, 1,3-dicyanopropane, 1,4-dicyanobutane, 1,6-dicyanohexane, 1, Hydrocarbons having a cyano group such as 4-dicyanocyclohexane and 1,4-dicyanobenzen
- the total amount of the precursor in the raw material for forming a thin film is preferably 0.01 mol / liter to 2.0 mol / liter, more preferably. It may be adjusted to be 0.05 mol / liter to 1.0 mol / liter.
- the total amount of the precursor is represented by the above general formula (1) or (2) when the raw material for forming a thin film of the present invention does not contain a compound containing a metal other than yttrium and a compound containing a semi-metal.
- the raw material for forming a thin film of the present invention contains another precursor in addition to the yttrium compound represented by the above general formula (1) or (2), it is represented by the above general formula (1) or (2). Represents the total amount of yttrium compound and other precursors.
- the raw material for forming a thin film of the present invention contains a nucleophile in order to improve the stability of the yttrium compound represented by the above general formula (1) or (2) and other precursors, if necessary.
- the nucleophilic reagent include ethylene glycol ethers such as glyme, diglyme, triglime, and tetraglyme, 18-crown-6, dicyclohexyl-18-crown-6, 24-crown-8, and dicyclohexyl-24-crown.
- Crown ethers such as dibenzo-24-crown-8, ethylenediamine, N, N'-tetramethylethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, 1,1,4,7, Polyamines such as 7-pentamethyldiethylenetriamine, 1,1,4,7,10,10-hexamethyltriethylenetetramine, triethoxytriethyleneamine, cyclic polyamines such as cyclum and cyclone, pyridine, pyrrolidine, piperidine, morpholin.
- the amount of these nucleophiles used is preferably in the range of 0.1 mol to 10 mol, more preferably in the range of 1 mol to 4 mol, with respect to 1 mol of the total amount of precursor.
- the raw material for forming a thin film of the present invention contains as little as possible impurity metal elements other than the constituents thereof, impurity halogens such as impurity chlorine, and impurity organics.
- the impurity metal element content is preferably 100 ppb or less for each element, more preferably 10 ppb or less, and the total amount is preferably 1 ppm or less, more preferably 100 ppb or less.
- a gate insulating film, a gate film, or a barrier layer of an LSI it is necessary to reduce the contents of alkali metal elements and alkaline earth metal elements that affect the electrical characteristics of the obtained thin film.
- the impurity halogen content is preferably 100 ppm or less, more preferably 10 ppm or less, still more preferably 1 ppm or less.
- the total amount of the impurity organic content is preferably 500 ppm or less, more preferably 50 ppm or less, still more preferably 10 ppm or less.
- precursors, organic solvents and nucleophiles are used to reduce the water content of each. It is better to remove as much water as possible in advance.
- the water content of each of the precursor, the organic solvent and the nucleophilic reagent is preferably 10 ppm or less, more preferably 1 ppm or less.
- the raw material for forming a thin film of the present invention contains as little particles as possible in order to reduce or prevent particle contamination of the formed thin film.
- the number of particles larger than 0.3 ⁇ m is preferably 100 or less in 1 ml of the liquid phase, and is larger than 0.2 ⁇ m. It is more preferable that the number of particles is 100 or less in 1 ml of the liquid phase.
- a method for producing a thin film of the present invention using the above-mentioned raw material for forming a thin film will be described.
- a method for producing a thin film containing a yttrium atom (hereinafter, also referred to as “yttrium-containing thin film”) by the ALD method will be described.
- a well-known ALD device can be used as the device used in the method for producing a thin film of the present invention.
- the device include a device capable of bubbling and supplying a precursor as shown in FIGS. 1 and 3, and a device having a vaporization chamber as shown in FIGS. 2 and 4.
- an apparatus capable of performing plasma treatment on the reactive gas can be mentioned.
- an apparatus capable of simultaneously processing a large number of sheets using a batch furnace can also be used. These devices can be used as CVD devices.
- the raw material gas obtained by vaporizing the above-mentioned thin film forming raw material is introduced into a film forming chamber in which a substrate is installed (hereinafter, may be referred to as a "deposition reaction portion").
- the method for producing a thin film of the present invention is a step of exhausting gas in the film forming chamber between the precursor thin film forming step and the ittrium-containing thin film forming step and / or after the ittrium-containing thin film forming step (exhaust step). It is preferable to have.
- a series of operations of forming a precursor thin film, an exhaust step, an yttrium-containing thin film forming step, and an exhaust step are performed in order, and the deposition is set as one cycle, and this cycle is repeated.
- the thickness of the thin film of the present invention can be adjusted.
- each step of the thin film manufacturing method of the present invention will be described.
- the raw material gas introduction step is a step of vaporizing the above-mentioned raw material for forming a thin film into a raw material gas, and introducing the raw material gas into a deposition reaction section in which a substrate is installed.
- a method for transporting and supplying the raw material for thin film formation as shown in FIGS. 1 and 3, heating is performed in a container (hereinafter, also referred to as “raw material container”) in which the raw material for thin film formation of the present invention is stored.
- the raw material gas is vaporized by depressurizing to obtain a raw material gas, and if necessary, the raw material gas is introduced into the deposition reaction section where the substrate is installed together with carrier gas such as argon, nitrogen, and helium.
- carrier gas such as argon, nitrogen, and helium.
- the raw material for forming a thin film is transported to a vaporization chamber in the form of a liquid or a solution, and vaporized by heating and / or depressurizing in the vaporization chamber to obtain a raw material gas, and the raw material gas is used as a substrate.
- the yttrium compound itself represented by the above general formula (1) or (2) can be used as a raw material for forming a thin film.
- the yttrium compound represented by the above general formula (1) or (2) or a solution obtained by dissolving the yttrium compound in an organic solvent can be used as a raw material for forming a thin film.
- These raw materials for forming a thin film may further contain a nucleophilic reagent or the like.
- a multi-component ALD method including a plurality of precursors is used as a single as described in ⁇ Thin film forming raw material>.
- the raw material for forming a thin film of the present invention is vaporized in the range of 0 ° C to 200 ° C.
- the pressure in the raw material container and the pressure in the vaporization chamber are preferably in the range of 1 Pa to 10,000 Pa.
- examples of the material of the substrate installed in the deposition reaction section include silicon; ceramics such as silicon nitride, titanium nitride, tantalum nitride, titanium oxide, ruthenium oxide, zirconium oxide, hafnium oxide, and lanthanum oxide; glass; Examples thereof include metals such as metallic cobalt and metallic ruthenium.
- examples of the shape of the substrate include plate-like, spherical, fibrous, and scaly shapes.
- the surface of the substrate may be flat or may have a three-dimensional structure such as a trench structure.
- the yttrium compound represented by the above general formula (1) or (2) in the raw material gas introduced into the deposition reaction section in which the substrate is installed is deposited on the surface of the substrate to deposit the substrate.
- a precursor thin film is formed on the surface.
- the substrate may be heated, or the deposition reaction portion may be heated to apply heat.
- the production conditions for forming the precursor thin film are not particularly limited, and for example, the reaction temperature (base temperature), reaction pressure, deposition rate and the like can be appropriately determined according to the type of the thin film forming raw material.
- the reaction temperature is preferably 100 ° C.
- reaction pressure is preferably 1 Pa to 10,000 Pa, more preferably 10 Pa to 1,000 Pa.
- the deposition rate can be controlled by the supply conditions (vaporization temperature, vaporization pressure), reaction temperature, and reaction pressure of the raw material for thin film formation. If the deposition rate is high, the characteristics of the obtained thin film may deteriorate, and if it is low, productivity problems may occur. Therefore, 0.01 nm / min to 100 nm / min is preferable, and 0.1 nm / min to 50 nm / min is preferable. Minutes are more preferred.
- the raw material gas that has not accumulated on the surface of the substrate is exhausted from the deposition reaction section. At this time, it is ideal that the raw material gas is completely exhausted from the deposition reaction portion, but it is not always necessary to completely exhaust the raw material gas.
- the exhaust method include a method of purging the inside of the system of the deposition reaction part with an inert gas such as helium, nitrogen, and argon, a method of exhausting by depressurizing the inside of the system, and a method of combining these.
- the degree of decompression in the case of depressurization is preferably in the range of 0.01 Pa to 300 Pa, more preferably in the range of 0.01 Pa to 100 Pa.
- yttrium-containing thin film forming process In the yttrium-containing thin film forming step, after the exhaust step, a reactive gas is introduced into the deposition reaction section and deposited on the surface of the precursor thin film, that is, the substrate by the action of the reactive gas or the action of the reactive gas and the action of heat.
- the yttrium compound represented by the above general formula (1) or (2) is reacted with the reactive gas to form an yttrium-containing thin film.
- the reactive gas examples include oxidizing gas such as oxygen, ozone, nitrogen dioxide, nitrogen monoxide, steam, hydrogen peroxide, formic acid, acetic acid and anhydrous acetic acid, reducing gas such as hydrogen, monoalkylamine and dialkyl.
- oxidizing gas such as oxygen, ozone, nitrogen dioxide, nitrogen monoxide, steam, hydrogen peroxide, formic acid, acetic acid and anhydrous acetic acid
- reducing gas such as hydrogen, monoalkylamine and dialkyl.
- organic amine compounds such as amines, trialkylamines and alkylenediamines, and nitrided gases such as hydrazine and ammonia. These reactive gases may be used alone or in combination of two or more.
- the reactive gas is preferably an oxidizing gas, and more preferably a gas containing oxygen, ozone or water vapor.
- an oxidizing gas is used as the reactive gas, a yttrium oxide thin film is formed as the y
- the reaction is preferably in the range of 50 ° C to 500 ° C, and more preferably in the range of 100 ° C to 400 ° C.
- the pressure in the deposition reaction section when this step is performed is preferably 1 Pa to 10,000 Pa, more preferably 10 Pa to 1,000 Pa.
- the raw material gas introduction step, the precursor thin film forming step, the exhaust process, the yttrium-containing thin film forming step and the exhaust step are carried out in order, and the deposition by a series of operations is regarded as one cycle, and this cycle is the required film thickness.
- this cycle is the required film thickness.
- energy such as plasma, light, and voltage may be applied to the deposition reaction portion, or a catalyst may be used.
- the timing of applying the energy and the timing of using the catalyst are not particularly limited, and for example, the reaction in the raw material gas introduction step, the heating in the precursor thin film forming step, and the reaction in the yttrium-containing thin film forming step. It may be at the time of introducing the sex gas, at the time of reacting the reactive gas with the precursor thin film, at the time of exhausting in the system in the exhausting step, or during each of the above steps.
- annealing treatment may be performed in an inert atmosphere, an oxidizing atmosphere or a reducing atmosphere in order to obtain better electrical characteristics. If embedding is required, a reflow process may be provided.
- the temperature is preferably 200 ° C to 1,000 ° C, more preferably 250 ° C to 500 ° C.
- the thin film produced by using the raw material for forming a thin film of the present invention covers a substrate such as metal, oxide ceramics, nitride ceramics, and glass by appropriately selecting other precursors, reactive gases, and production conditions. Therefore, a desired type of thin film can be obtained. Since the thin film of the present invention is excellent in electrical characteristics and optical characteristics, for example, it is used for electrode materials of memory elements represented by DRAM elements, resistance films, antimagnetic films used for recording layers of hard disks, and polymer electrolyte fuel cells. It can be widely used in the production of catalyst materials and the like.
- the generated yttrium complex (orange viscous liquid) was placed in a flask, connected to a Kugelrohr purification device, and distilled at a heating temperature of 230 ° C. and 55 Pa to obtain a yellow viscous liquid.
- the obtained yellow viscous liquid was analyzed by 1 H-NMR and ICP-AES, and as a result, yttrium compound No. It was confirmed that it was 1.
- the analysis results of the obtained yellow viscous liquid are shown below.
- the produced yttrium complex (orange viscous liquid) was placed in a flask, connected to a Kugelrohr purifier, and distilled at a heating temperature of 205 ° C. and 21 Pa to obtain a yellow viscous liquid.
- the obtained yellow viscous liquid became a yellow solid when allowed to cool to room temperature.
- the obtained yellow viscous liquid was analyzed by 1 H-NMR and ICP-AES, and as a result, yttrium compound No. It was confirmed that it was 3.
- the analysis results of the obtained yellow viscous liquid are shown below.
- yttrium complex (orange viscous substance) was placed in a flask, connected to a Kugelrohr purifier, and distilled at a heating temperature of 214 ° C. and 17 Pa to obtain a yellow liquid.
- the obtained yellow liquid became a yellow glassy solid when allowed to cool to room temperature.
- yttrium compound No. It was confirmed that it was 6.
- the produced yttrium complex (reddish brown viscous substance) was placed in a flask, connected to a Kugelrohr purifier, and distilled at a heating temperature of 210 ° C. and 23 Pa to obtain a yellow liquid.
- the obtained yellow liquid was allowed to cool to room temperature to obtain a yellow solid.
- the obtained yellow solid was analyzed by 1 H-NMR and ICP-AES, and as a result, yttrium compound No. It was confirmed that it was 15.
- the analysis results of the obtained yellow solid are shown below.
- Yttrium compound No. 1 produced in Production Examples 1 to 5 above. 1, No. 3, No. 6, No. The following evaluation was performed using 15 and Comparative Compound 1.
- the comparative compound 1 had a thermal decomposition start temperature of 267 ° C., was poor in thermal stability, and was not satisfactory as a raw material for forming a thin film.
- yttrium compound No. 1, No. 3, No. 6 and No. It was confirmed that No. 15 had an excellent thermal stability because the thermal decomposition start temperature was 300 ° C. or higher even though the melting point was low. Further, it was confirmed that the temperature of these yttrium compounds when the reduced pressure TG-DTA was reduced by 50% by mass was around 230 ° C., and vapor could be obtained at a low temperature. From these results, it was confirmed that the yttrium compound represented by the general formula (1) or (2) is useful as a raw material for forming a thin film. In addition, compound No. of Example 3 The appearance of No. 6 was similar to that of water glass and had no fluidity.
- Example 5 Production of thin film by ALD method Yttrium compound No. A thin film was produced on silicon dioxide as a substrate under the following conditions using 15 as a raw material for forming a thin film and using the ALD apparatus of FIG. When the composition of the thin film was analyzed using X-ray photoelectron spectroscopy, it was confirmed that the thin film was a thin film containing yttrium oxide and the residual carbon content was less than the detection limit of 0.01 atom%. Further, when the film thickness of the thin film was measured by the X-ray reflectivity method, the thin film formed on the substrate was a smooth film with a film thickness of 20 nm, and the film thickness obtained per cycle was about 0. It was 0.05 nm.
- Example 6 Production of thin film by ALD method Yttrium compound No. 3 was used as a raw material for forming a thin film, and a thin film was produced on silicon dioxide as a substrate under the following conditions using the ALD apparatus of FIG.
- the composition of the thin film was analyzed using X-ray photoelectron spectroscopy, it was confirmed that the thin film was a thin film containing yttrium oxide and the residual carbon content was less than the detection limit of 0.01 atom%.
- the film thickness of the thin film was measured by the X-ray reflectivity method, the thin film formed on the substrate was a smooth film with a film thickness of 16 nm, and the film thickness obtained per cycle was about 0. It was .04 nm.
- Comparative Example 2 Production of Thin Film by ALD Method A thin film was produced on silicon dioxide as a substrate under the same conditions as in Example 5 except that Comparative Compound 1 was used as a raw material for forming a thin film.
- the composition of the thin film was analyzed using X-ray electron spectroscopy, the thin film was a thin film containing yttrium oxide, but residual carbon was detected.
- the state of the thin film was observed using the scanning electron microscope method, the thin film formed on the substrate was not smooth and the film thickness could not be measured.
- the raw material for forming a thin film containing the yttrium compound of the present invention has a low melting point, vapor can be obtained at a low temperature, and the thermal stability is excellent. Therefore, when a thin film is produced using the raw material for forming a thin film of the present invention, a high-quality yttrium-containing thin film having a small amount of residual carbon can be produced.
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Abstract
Un matériau de formation de film mince contenant un composé d'yttrium représenté par la formule générale (1) est divulgué. (Dans la formule, R1 et R3 représentent chacun indépendamment un groupe alkyle ayant de 1 à 6 atomes de carbone ou un groupe alcoxyalkyle ayant de 2 à 6 atomes de carbone, R2 représente un atome d'hydrogène ou un groupe alkyle ayant 1 à 3 atomes de carbone, R4 représente un groupe alcanediyle ayant 1 à 5 atomes de carbone, R5 représente un groupe alkyle ayant chacun 1 à 3 atomes de carbone, et R1, R2, R3, R4 et R5, qui sont chacun présents dans un nombre supérieur à un, peuvent être identiques ou différents l'un dans l'autre.)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023154270A1 (fr) * | 2022-02-08 | 2023-08-17 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Préparation de précurseurs contenant des lanthanides et dépôt de couches contenant des lanthanides |
US11784041B2 (en) | 2022-02-08 | 2023-10-10 | L'Air Liquide, Sociéte Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films |
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JPWO2022014344A1 (fr) | 2022-01-20 |
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