WO2022007177A1 - 有机发光二极管显示器件、其制造方法以及显示面板 - Google Patents

有机发光二极管显示器件、其制造方法以及显示面板 Download PDF

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WO2022007177A1
WO2022007177A1 PCT/CN2020/114359 CN2020114359W WO2022007177A1 WO 2022007177 A1 WO2022007177 A1 WO 2022007177A1 CN 2020114359 W CN2020114359 W CN 2020114359W WO 2022007177 A1 WO2022007177 A1 WO 2022007177A1
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light
emitting
emitting layer
layer
host material
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PCT/CN2020/114359
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English (en)
French (fr)
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李维维
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武汉华星光电半导体显示技术有限公司
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Priority to US17/262,755 priority Critical patent/US20220393127A1/en
Priority to EP20944774.7A priority patent/EP4177979A1/en
Publication of WO2022007177A1 publication Critical patent/WO2022007177A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present application relates to the field of display, and in particular, to an organic light emitting diode display device, a method for manufacturing the same, and a display panel.
  • OLED Organic Light-Emitting Diode
  • organic light emitting diode display devices used for vehicle mainly include red, green and blue pixel juxtaposition method (RGB-SBS, RGB Side By Side) and stack (Tandem) structure.
  • RGB-SBS red, green and blue pixel juxtaposition method
  • RGB-SBS RGB Side By Side
  • Tandem stack
  • the OLED display device of the RGB-SBS structure cannot reach the current efficiency and service life level of the Tandem structure.
  • the manufacturing process of the Tandem structure needs to double the evaporation chamber on the basis of the manufacturing process of the SBS structure, which increases the complexity of the process and the production cost, which is not conducive to mass production.
  • the purpose of the present application is to provide an organic light emitting diode display device and a display panel that can improve current efficiency and service life, are simple to manufacture, and have low cost.
  • the present application provides an organic light-emitting diode display device, which includes an anode layer, a cathode layer, and a light-emitting layer disposed between the anode layer and the cathode layer.
  • the first light-emitting layer includes a first-color light-emitting part, a second-color light-emitting part and a third-color light-emitting part arranged on the same layer
  • the second light-emitting layer is used for emitting light of the first color
  • the second light-emitting layer is located on one side of the first light-emitting layer and covers the first light-emitting layer.
  • the first-color light-emitting portion includes a first host material and a first guest material
  • the second-color light-emitting portion includes a second host material
  • the third-color light-emitting portion includes a third host material
  • the second light-emitting layer includes a fourth host material and a fourth guest material.
  • the first triplet excited state energy level of the fourth host material is greater than the first triplet excited state energy level of the second host material and the first triplet excited state energy level of the third host material Excited state energy level.
  • the second light-emitting layer is disposed between the cathode and the first light-emitting layer, and the highest occupied molecular orbital energy level of the fourth host material is smaller than the highest energy level of the first host material Occupy molecular orbital energy level.
  • the fourth host material is an electron-biased light-emitting material
  • the first host material is a hole-biased light-emitting material
  • the second light-emitting layer is disposed between the anode and the first light-emitting layer, and the highest occupied molecular orbital energy level of the fourth host material is greater than the highest energy level of the first host material Occupy molecular orbital energy level.
  • the fourth host material is a hole-biased light-emitting material
  • the first host material is an electron-biased light-emitting material
  • the doping concentration of the first guest material in the first color light-emitting portion is greater than the doping concentration of the fourth guest material in the second light-emitting layer.
  • the present application also provides a method for manufacturing an organic light emitting diode display device, which includes the following steps:
  • a light-emitting layer is formed on the anode layer, the light-emitting layer includes a first light-emitting layer and a second light-emitting layer arranged in layers, and the first light-emitting layer includes a first-color light-emitting part and a second-color light-emitting part arranged in the same layer and a light-emitting part of a third color, the second light-emitting layer is used to emit light of a first color, the second light-emitting layer is located on one side of the first light-emitting layer and covers the first light-emitting layer, wherein the first light-emitting layer is A light-emitting layer is formed by evaporation using a fine mask, and the second light-emitting layer is formed by evaporation using a non-fine mask;
  • a cathode layer is formed on the light-emitting layer to obtain an organic light-emitting diode display device.
  • the present application also provides a display panel including the organic light emitting diode display device described in any one of the above.
  • the organic light emitting diode display device of the present application selectively compensates the light emitting layer by adding a second light emitting layer on the SBS structure.
  • the second light-emitting layer of the organic light-emitting diode display of the present application is set in a full-surface shape, which can reduce a fine mask process, reduce costs, and improve yield.
  • the aperture ratio of the organic light emitting diode display device can also be improved.
  • FIG. 1 is a schematic structural diagram of an organic light emitting diode display device according to a first embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of an organic light emitting diode display device according to a second embodiment of the present application.
  • FIG. 3 is a flowchart of a manufacturing method of an organic light emitting diode display device according to a third embodiment of the present application.
  • FIGS. 4( a ) to 4 ( d ) are schematic diagrams of steps of a manufacturing method of an organic light emitting diode display device according to a third embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a display panel according to a fourth embodiment of the present application.
  • a first embodiment of the present application provides an organic light-emitting diode (Organic Light-Emitting Diode, OLED) display device 100 .
  • OLED Organic Light-Emitting Diode
  • the present application does not limit the type of the organic light emitting diode display device 100 .
  • the organic light emitting diode display device 100 may be, for example, a quantum dot organic light emitting diode (Quantum Dot Light Emitting Diodes, QLED) display panel.
  • QLED Quantum Dot Light Emitting Diodes
  • the organic light emitting diode display device 100 includes an anode layer 10 , a cathode layer 20 , and a light-emitting layer 30 disposed between the anode layer 10 and the cathode layer 20 .
  • the light-emitting layer 30 includes a first light-emitting layer 31 and a second light-emitting layer 32 that are stacked.
  • the organic light emitting diode display device 100 can be classified into a top emission type and a bottom emission type according to the light exit direction.
  • the anode layer 10 may be a metal electrode layer or a transparent electrode layer.
  • the material of the metal electrode layer can be selected from high work function metal materials.
  • the material of the transparent electrode layer can be selected from metal oxides, such as indium tin oxide and the like.
  • the cathode layer 20 may also be a metal electrode layer, a transparent electrode layer, or a semitransparent electrode layer.
  • the material of the metal electrode layer can be selected from metal materials with low work function, such as lithium, calcium, magnesium, beryllium, aluminum, gold, silver, or an alloy of two or more metals.
  • the materials of the transparent electrode layer and the semi-transparent electrode layer can be selected from metal oxides, such as indium tin oxide and the like.
  • the first light-emitting layer 31 includes a first-color light-emitting portion 311 , a second-color light-emitting portion 312 and a third-color light-emitting portion 313 that are juxtaposed, that is, disposed in the same layer.
  • the first color light emitting part 311 is used for emitting light of the first color.
  • the second color light emitting part 312 is used for emitting light of the second color.
  • the third-color light-emitting portion 313 emits light of a third color.
  • the first color light emitting part 311 , the second color light emitting part 312 and the third color light emitting part 313 correspond to one of the red light emitting part, the blue light emitting part and the green light emitting part, respectively.
  • the first color may be any one of red, blue, and green. It can be understood that in other embodiments of the present application, the first light-emitting layer 31 may further include light-emitting layers of four colors, and the fourth color may be yellow or white.
  • the first color may be any one of red, blue, green, and yellow, or any one of red, blue, green, and white.
  • the first color light emitting part 311 includes a first host material 311a and a first guest material 311b.
  • the second color light emitting part 312 includes a second host material 312a and a second guest material 312b.
  • the third color light emitting part 313 includes a third host material 313a and a third guest material 313b.
  • the guest material is doped into the host material, and the doping concentration of the guest material is controlled by using a dual-source co-evaporation technique through doping and different evaporation rates.
  • the second light-emitting layer 32 is used to emit light of the first color.
  • the second light-emitting layer 32 is disposed between the cathode 10 and the first light-emitting layer 31 .
  • the second light emitting layer 32 includes a fourth host material 32a and a fourth guest material 32b. Since the doping concentration is higher, the electron mobility of the light-emitting layer is lower. In order to better transfer electrons from the second light emitting layer 32 to the first color light emitting part 311 , the doping concentration of the first guest material 311 b in the first color light emitting part 311 is higher than that of the fourth guest material 32 b in the second light emitting layer 32 doping concentration in .
  • the doping concentration of the first guest material 311b in the first color light-emitting portion 311 is 3% to 5%, and the doping concentration of the fourth guest material 32b in the second light-emitting layer 32 is less than 3% %.
  • the fourth host material 32a is an electron-biased light-emitting material
  • the first host material 311a is a hole-biased light-emitting material.
  • the so-called “hole-biased material” refers to a material whose hole mobility is larger than electron mobility, or whose hole injection capability is larger than electron injection capability.
  • the so-called “electron-biased material” refers to a material whose electron mobility is greater than hole mobility, or whose electron injection capability is greater than hole injection capability. In electron-type materials, hole transport is slow, while electron transport is fast.
  • CBP is exemplified.
  • BAlq is exemplified.
  • the second light-emitting layer 32 is located on one side of the first light-emitting layer 31 and covers the first light-emitting layer 31 , and is arranged in the shape of a whole surface, that is, the orthographic projection of the second light-emitting layer 32 on the first light-emitting layer 31 covers the first light-emitting layer 31 .
  • the second light-emitting layer 32 in the shape of a whole surface can be fabricated by using a non-fine mask, which can reduce the use of a fine mask.
  • the first triplet excited state energy level of the fourth host material 32a is greater than the first triplet excited state energy level of the second host material 312a and the first triplet excited state energy level of the third host material 313a. Therefore, it can be ensured that the light emission of the second color light emitting part 312 and the third color light emitting part 313 is not affected by the second light emitting layer 32 .
  • the first color light emitting part 311 and the second light emitting layer 32 are blue light emitting layers.
  • the fourth host material 32a of the second light-emitting layer 32 may be selected from the compounds represented by the following formulas 1 and 2:
  • R is hydrogen, or a substituent having 1 to 20 carbon atoms and selected from phenyl derivatives, biphenyl derivatives, naphthyl derivatives and aryl derivatives, X is selected from naphthyl derivatives,
  • the phenyl derivative, the phenylnaphthalene derivative and the phenylanthracene derivative monomer, the blue light host may also include at least one compound of anthracene dinaphthalene, anthracene diphenyl, anthracene naphthalene biphenyl and anthracene diphenyl.
  • R1 to R6 are all hydrogen atoms, halogen atoms, hydroxyl groups, cyano groups, nitro groups, groups containing carbonyl groups with less than 20 carbon atoms, groups containing carbonyl ester groups, alkyl groups, alkenyl groups, alkane groups An oxy group, a group containing a silyl group having 30 or less carbon atoms, a group containing an aryl group, a group containing a heterocyclic group, a group containing an amino group, or a derivative thereof.
  • the fourth host material 32a of the second light-emitting layer 32 may be:
  • the fourth guest material 32b may be a blue fluorescent dopant in the prior art, which is not limited herein.
  • the organic light emitting diode display device 100 may further include a hole injection layer 40 disposed between the anode layer 10 and the first light emitting layer 31 , a hole transport layer 50 , and a hole transport layer 50 disposed between the cathode layer 20 and the first light emitting layer 31 The electron transport layer 60.
  • the organic light-emitting diode display device 200 of the second embodiment of the present application is substantially the same as the organic light-emitting display device 100 of the first embodiment, except that the second light-emitting layer 32 is disposed on the anode 10 and the first light-emitting layer between 31.
  • the highest occupied molecular orbital energy level of the fourth host material 32a is greater than the highest occupied molecular orbital energy level of the first host material 311a.
  • the fourth host material 32a is a hole-biased light-emitting material
  • the first host material 311a is an electron-biased light-emitting material.
  • the first color light emitting part 311 and the second light emitting layer 32 are blue light emitting layers.
  • the fourth host material 32a can be selected from N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), 4, 4',4"-tris(carbazol-9-yl)triphenylamine (TCTA), etc.
  • the fourth guest material 32b that is, the blue fluorescent dopant, can be selected from 4,4'-bis(2,2-diphenylene) vinyl)-1,1'-biphenyl (DPVBi), spiro-DPVBi, spiro-6P, etc.
  • the third embodiment of the present application further provides a method for manufacturing an organic light emitting diode display device, which can be used to manufacture the organic light emitting diode display device of the present application.
  • the manufacturing method includes the following steps:
  • the anode layer 10 may be deposited on a substrate by vapor deposition.
  • the light-emitting layer 30 includes a first light-emitting layer 31 and a second light-emitting layer 32 that are stacked.
  • the first light-emitting layer 31 includes a first-color light-emitting portion 311 , a second-color light-emitting portion 312 and a third-color light-emitting portion 313 disposed in the same layer.
  • the second light-emitting layer 32 is used for emitting light of the first color.
  • the second light-emitting layer 32 is located on one side of the first light-emitting layer 31 and covers the first light-emitting layer 31 .
  • the second light-emitting layer 32 is provided in a full-surface shape.
  • the first light-emitting layer 31 is formed by vapor deposition using a fine mask A
  • the second light-emitting layer 32 is formed by vapor deposition B using a normal mask, that is, a non-fine mask.
  • the first light emitting layer 31 is formed by vapor deposition using a fine mask A
  • the second light emitting layer 32 is formed by vapor deposition B on the first light emitting layer 31 using a non-fine mask.
  • the second light-emitting layer 32 may be formed first and then the first light-emitting layer 31 may be formed.
  • step S1 and step S2 a step of forming a hole injection layer 40 and a hole transport layer 50 on the anode layer 10 may also be included.
  • the light emitting layer 30 is formed on the hole transport layer 50 .
  • a step of forming the electron transport layer 60 on the light emitting layer 30 may further be included between steps S2 and S3.
  • the cathode layer 40 is formed on the electron transport layer 60 .
  • the cathode layer, the anode layer, the hole transport layer, the hole injection layer, the electron transport layer, etc. can all be manufactured by the methods in the prior art. It will not be repeated in this article.
  • a third embodiment of the present application further provides a display panel 1 .
  • the display panel 1 can be used for mobile phones, tablet computers, televisions, billboards, automatic teller machines, and in-vehicle displays.
  • the display panel 1 is an in-vehicle display.
  • the display panel 1 includes a substrate 1a, a driving circuit layer 1b provided on the substrate 1a, a pixel definition layer 1c provided on the driving circuit layer 1b, and a plurality of organic light emitting devices 100 .
  • the organic light emitting device 100 is any organic light emitting diode display device provided in this application.
  • the organic light emitting diode display device of the present application can selectively compensate the light emitting layer by adding a second light emitting layer on the SBS structure.
  • the second light-emitting layer of the organic light-emitting diode display of the present application is set in a full-surface shape, which can reduce a fine mask process, reduce costs, and improve yield.
  • the aperture ratio of the organic light emitting diode display device can also be improved.

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Abstract

本申请提供一种有机发光二极管显示器件，其包括阳极层、阴极层以及设置于阳极层与阴极层之间的发光层，发光层包括层叠设置的第一发光层和第二发光层，第一发光层包括同层设置的第一颜色发光部、第二颜色发光部和第三颜色发光部，第二发光层用于发出第一颜色的光，第二发光层位于第一发光层的一侧并覆盖第一发光层。

Description

有机发光二极管显示器件、其制造方法以及显示面板 技术领域
本申请涉及显示领域，尤其涉及一种有机发光二极管显示器件、其制造方法及显示面板。
背景技术
目前，用于车载的OLED(Organic Light-Emitting Diode)有机发光二极管显示器件主要包含红、绿、蓝像素并置法(RGB-SBS，RGB Side By Side)和叠层(Tandem)结构。RGB-SBS结构的有机发光二极管显示器件无法达到Tandem结构的电流效率和使用寿命水平。而Tandem结构的制造工艺需要在SBS结构的制造工艺的基础上增加一倍蒸镀腔室，提高了工艺的复杂性以及生产成本，不利于量产。
技术问题
有鉴于此，本申请目的在于提供一种能够提高电流效率和使用寿命，且制造简单，成本低的有机发光二极管显示器件及显示面板。
技术解决方案
本申请提供一种有机发光二极管显示器件，其包括阳极层、阴极层以及设置于所述阳极层与所述阴极层之间的发光层，所述发光层包括层叠设置的第一发光层和第二发光层，所述第一发光层包括同层设置的第一颜色发光部、第二颜色发光部和第三颜色发光部，所述第二发光层用于发出第一颜色的光，所述第二发光层位于所述第一发光层的一侧并覆盖所述第一发光层。
在一种实施方式中，所述第一颜色发光部包括第一主体材料和第一客体材料，所述第二颜色发光部包括第二主体材料，所述第三颜色发光部包括第三主体材料，所述第二发光层包括第四主体材料和第四客体材料。
在一种实施方式中，所述第四主体材料的第一三重激发态能级大于所述第二主体材料的第一三重激发态能级和所述第三主体材料的第一三重激发态能级。
在一种实施方式中，所述第二发光层设置于所述阴极与所述第一发光层之间，所述第四主体材料的最高占据分子轨道能级小于所述第一主体材料的最高占据分子轨道能级。
在一种实施方式中，所述第四主体材料为偏电子型发光材料，所述第一主体材料为偏空穴型发光材料。
在一种实施方式中，所述第二发光层设置于所述阳极与所述第一发光层之间，所述第四主体材料的最高占据分子轨道能级大于所述第一主体材料的最高占据分子轨道能级。
在一种实施方式中，所述第四主体材料为偏空穴型发光材料，所述第一主体材料为偏电子型发光材料。
在一种实施方式中，所述第一客体材料在所述第一颜色发光部中的掺杂浓度大于所述第四客体材料在所述第二发光层中的掺杂浓度。
本申请还提供一种有机发光二极管显示器件的制造方法，其包括以下步骤：
形成阳极层；
在所述阳极层上形成发光层，所述发光层包括层叠设置的第一发光层和第二发光层，所述第一发光层包括同层设置的第一颜色发光部、第二颜色发光部和第三颜色发光部，所述第二发光层用于发出第一颜色的光，所述第二发光层位于所述第一发光层的一侧并覆盖所述第一发光层，其中，第一发光层使用精细掩模蒸镀形成，第二发光层使用非精细掩模蒸镀形成；
在所述发光层上形成阴极层，得到有机发光二极管显示器件。
本申请还提供一种显示面板，其包括如上任一项所述的有机发光二极管显示器件。
有益效果
相较于现有技术，本申请的有机发光二极管显示器件通过在SBS结构上增加一第二发光层，选择性地对发光层进行补偿。并且，使两个发光层串联，发光光子增加，发光效率提升，在同样的亮度下提升有机发光二极管器件的寿命。此外，本申请的有机发光二极管显示器的第二发光层设置为整面状，能够减少一道精密掩模(fine mask)制程，降低成本，提高良率。此外，还可以提高有机发光二极管显示器件的开口率。
附图说明
为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要 使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请第一实施方式提供的有机发光二极管显示器件的结构示意图。
图2为本申请第二实施方式提供的有机发光二极管显示器件的结构示意图。
图3为本申请第三实施方式提供的有机发光二极管显示器件的制造方法的流程图。
图4(a)至图4(d)为本申请第三实施方式提供的有机发光二极管显示器件的制造方法的步骤示意图。
图5为本申请第四实施方式提供的一种显示面板的结构示意图。
本发明的实施方式
下面将结合本申请实施方式中的附图，对本申请中的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅仅是本申请一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。
请参考图1，本申请第一实施方式提供一种有机发光二极管(Organic Light-Emitting Diode，OLED)显示器件100。本申请不限定有机发光二极管显示器件100的类型。在本申请一个实施方式中，有机发光二极管显示器件100可以是例如量子点有机发光二极管(Quantum Dot Light Emitting Diodes，QLED)显示面板。
有机发光二极管显示器件100包括阳极层10、阴极层20以及设置于阳极层10与阴极层20之间的发光层30。发光层30包括层叠设置的第一发光层31和第二发光层32。
根据光出射方向，有机发光二极管显示器件100可以分为顶发射型和底发射型。根据有机发光二极管显示器件100的类型，阳极层10可以为金属电极层或者透明电极层。金属电极层的材料可以选自高功函数的金属材料。透明电极层的材料可以选自金属氧化物，例如氧化铟锡等。阴极层20也可以为金属 电极层或者透明电极层、半透明电极层。金属电极层的材料可以选自低功函数的金属材料，例如锂、钙、镁、铍、铝、金、银或其中两种以上金属的合金等。透明电极层和半透明电极层的材料可以选自金属氧化物，例如氧化铟锡等。
第一发光层31包括并置，即同层设置的第一颜色发光部311，第二颜色发光部312和第三颜色发光部313。第一颜色发光部311用于发出第一颜色的光。第二颜色发光部312用于发出第二颜色的光。第三颜色发光部313用于发出第三颜色的光。第一颜色发光部311，第二颜色发光部312和第三颜色发光部313分别对应红色发光部、蓝色发光部和绿色发光部中的一个。例如，在本实施方式中，第一颜色可以是红色、蓝色以及绿色中的任意一个。可以理解，在本申请其他实施方式中，第一发光层31还可以包括四种颜色的发光层，该第四颜色可以是黄色或者白色。第一颜色可以为红色、蓝色、绿色以及黄色中的任意一个或者红色、蓝色、绿色以及白色中的任意一个。
第一颜色发光部311包括第一主体材料311a和第一客体材料311b。第二颜色发光部312包括第二主体材料312a和第二客体材料312b。第三颜色发光部313包括第三主体材料313a和第三客体材料313b。客体材料掺杂于主体材料中，通过掺杂用双源共蒸技术，通过不同的蒸发速率来控制客体材料的掺杂浓度。所谓掺杂浓度是指在进行蒸镀的时候客体材料的厚度占主体材料和客体材料厚度总数的比例。即，掺杂浓度的计算公式为：掺杂浓度＝客体材料的厚度/(主体材料的厚度+客体材料的厚度)*100％。
第二发光层32用于发出第一颜色的光。在本实施方式中，第二发光层32设置于阴极10与第一发光层31之间。第二发光层32包括第四主体材料32a和第四客体材料32b。由于掺杂浓度越大，发光层的电子迁移率越低。为了使电子从第二发光层32更好地传输到第一颜色发光部311，第一客体材料311b在第一颜色发光部311中的掺杂浓度大于第四客体材料32b在第二发光层32中的掺杂浓度。并且，在一个实施方式中，第一客体材料311b在第一颜色发光部311中的掺杂浓度为3％至5％，第四客体材料32b在第二发光层32中的掺杂浓度小于3％。
第四主体材料32a的最高占据分子轨道(Highest Occupied Molecular，
HOMO)能级小于第一主体材料311a的最高占据分子轨道能级。第四主体材 料32a为偏电子型发光材料，第一主体材料311a为偏空穴型发光材料。在本申请中，所谓“偏空穴型材料”是指空穴迁移率大于电子迁移率、或空穴注入能力大于电子注入能力的材料。所谓“偏电子型材料”是指电子迁移率大于空穴迁移率、或电子注入能力大于空穴注入能力的材料，也就是说，偏空穴型材料中空穴传输快，而电子传输慢；偏电子型材料中空穴传输慢，而电子传输快。偏空穴型材料可以列举CBP。偏电子型材料可以列举BAlq。
第二发光层32位于第一发光层31的一侧并覆盖第一发光层31，设置为整面状，即第二发光层32在第一发光层31上的正投影覆盖第一发光层31。相较于利用精密掩模(fine mask)制造的并置RGB发光层，整面状的第二发光层32利用非精密掩模就可以制造，能够减少一道精密掩模的使用。
第四主体材料32a的第一三重激发态能级大于第二主体材料312a的第一三重激发态能级和第三主体材料313a的第一三重激发态能级。由此，可以保证第二颜色发光部312和第三颜色发光部313的发光不受第二发光层32的影响。
在一个实施方式中，第一颜色发光部311和第二发光层32为蓝色发光层。其中，第二发光层32的第四主体材料32a可以选自由以下式1和式2所表示的化合物：
Figure PCTCN2020114359-appb-000001
R是氢，或者是具有1至20个碳原子并选自于苯基衍生物、联苯衍生物、萘基衍生物和芳基衍生物的取代物，X是选自于萘基衍生物、苯基衍生物、苯基萘衍生物和苯基蒽衍生物单体，蓝光主体也可以包括蒽二萘、蒽二联苯、蒽萘联苯和蒽二苯的至少一个化合物。其中，R1～R6均是氢原子、卤素原子、羟基、氰基、硝基或包含具有20个碳原子以下的羰基的基团、包含羰基酯基团的基团、烷基、烯基、烷氧基、包含具有30个碳原子以下的甲硅烷基的基团、包含芳基的基团、包含杂环基的基团、包含氨基的基团或其衍生物。
在一个实施方式中，第二发光层32的第四主体材料32a可以为：
Figure PCTCN2020114359-appb-000002
第四客体材料32b可以为现有技术中的蓝光荧光掺杂剂，在此不做限制。
此外，有机发光二极管显示器件100还可以包括设置于阳极层10与第一发光层31之间的空穴注入层40、空穴传输层50以及设置于阴极层20与第一发光层31之间的电子传输层60。
请参考图2，本申请第二实施方式的有机发光二极管显示器件200与第一实施方式的有机发光显示器件100大致相同，不同点在于：第二发光层32设置于阳极10与第一发光层31之间。第四主体材料32a的最高占据分子轨道能级大于第一主体材料311a的最高占据分子轨道能级。第四主体材料32a为偏空穴型发光材料，第一主体材料311a为偏电子型发光材料。
在一个实施方式中，第一颜色发光部311和第二发光层32为蓝色发光层。第四主体材料32a可以选自N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺(NPB)、4,4',4”-三(咔唑-9-基)三苯胺(TCTA)等。第四客体材料32b，即蓝光荧光掺杂剂可以选自4,4'-二(2,2-二苯乙烯基)-1,1'-联苯(DPVBi)、spiro-DPVBi、spiro-6P等。
请参考图3和图4(a)至图4(d)，本申请第三实施方式还提供一种有机发光二极管显示器件的制造方法，其可以用于制造本申请的有机发光二极管显示器件。
该制造方法包括以下步骤：
S1：请参考图4(a)，形成阳极层10。阳极层10可以通过气相沉积法沉积于一衬底上。
S2：请参考图4(b)至图4(c)，在阳极层10上形成发光层30。发光层30包括层叠设置的第一发光层31和第二发光层32。第一发光层31包括同层设置的第一颜色发光部311、第二颜色发光部312和第三颜色发光部313。第二发光层32用于发出第一颜色的光，第二发光层32位于第一发光层31的一侧并覆盖第一发光层31。第二发光层32设置为整面状。其中，第一发光层31使用精细掩模A蒸镀形成，第二发光层32使用普通掩模，即非精细掩模蒸镀B形成。在本实施方式中，先使用精细掩模A蒸镀形成第一发光层31，再在第一发光层31上使用非精细掩模蒸镀B形成第二发光层32。
在本申请其他实施方式中，可以先形成第二发光层32后形成第一发光层31。
在步骤S1与步骤S2之间，还可以包括在阳极层10上形成空穴注入层40、空穴传输层50的步骤。发光层30形成在空穴传输层50上。
S3：请参考图4(d)，在发光层30上形成阴极层40，得到有机发光二极管显示器件100。
在步骤S2和S3之间还还可以包括在发光层30上形成电子传输层60的步骤。阴极层40形成在电子传输层60上。
阴极层、阳极层、空穴传输层、空穴注入层以及电子传输层等均可以利用现有技术中的方法进行制造。在本文中不再赘述。此外，关于有机发光二极管显示器件的其他说明可以参考本申请第一实施方式以及第二实施方式，在此不再赘述。
请参考图5，本申请第三实施方式还提供一种显示面板1。显示面板1可以用于手机、平板电脑、电视机、广告牌、自动取款机以及车载显示器等。在本实施方式中，显示面板1为车载显示器。显示面板1包括衬底1a，设置于衬底1a上的驱动电路层1b，设置于驱动电路层1b上的像素定义层1c以及多个有机发光器件100。有机发光器件100为本申请所提供的任一种有机发光二极管显示器件。
相较于现有技术，本申请的有机发光二极管显示器件通过在SBS结构上 增加一第二发光层，可以选择性地对发光层进行补偿。并且，使两个发光层串联，发光光子增加，发光效率提升，在同样的亮度下提升有机发光二极管器件的寿命。此外，本申请的有机发光二极管显示器的第二发光层设置为整面状，能够减少一道精密掩模(fine mask)制程，降低成本，提高良率。此外，还可以提高有机发光二极管显示器件的开口率。
以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。

Claims (18)

  1. 一种有机发光二极管显示器件，其包括阳极层、阴极层以及设置于所述阳极层与所述阴极层之间的发光层，所述发光层包括层叠设置的第一发光层和第二发光层，所述第一发光层包括同层设置的第一颜色发光部、第二颜色发光部和第三颜色发光部，所述第二发光层用于发出第一颜色的光，所述第二发光层位于所述第一发光层的一侧并覆盖所述第一发光层。
  2. 如权利要求1所述的有机发光二极管显示器件，其中，所述第一颜色发光部包括第一主体材料和第一客体材料，所述第二颜色发光部包括第二主体材料，所述第三颜色发光部包括第三主体材料，所述第二发光层包括第四主体材料和第四客体材料。
  3. 如权利要求2所述的有机发光二极管显示器件，其中，所述第四主体材料的第一三重激发态能级大于所述第二主体材料的第一三重激发态能级和所述第三主体材料的第一三重激发态能级。
  4. 如权利要求2所述的有机发光二极管显示器件，其中，所述第二发光层设置于所述阴极与所述第一发光层之间，所述第四主体材料的最高占据分子轨道能级小于所述第一主体材料的最高占据分子轨道能级。
  5. 如权利要求4所述的有机发光二极管显示器件，其中，所述第四主体材料为偏电子型发光材料，所述第一主体材料为偏空穴型发光材料。
  6. 如权利要求2所述的有机发光二极管显示器件，其中，所述第二发光层设置于所述阳极与所述第一发光层之间，所述第四主体材料的最高占据分子轨道能级大于所述第一主体材料的最高占据分子轨道能级。
  7. 如权利要求6所述的有机发光二极管显示器件，其中，所述第四主体材料为偏空穴型发光材料，所述第一主体材料为偏电子型发光材料。
  8. 如权利要求2所述的有机发光二极管显示器件，其中，所述第一客体材料在所述第一颜色发光部中的掺杂浓度大于所述第四客体材料在所述第二发光层中的掺杂浓度。
  9. 如权利要求5所述的有机发光二极管显示器件，其中，所述第一客体材料在所述第一颜色发光部中的掺杂浓度大于所述第四客体材料在所述第二发光层中的掺杂浓度。
  10. 如权利要求7所述的有机发光二极管显示器件，其中，所述第一客体材料在所述第一颜色发光部中的掺杂浓度大于所述第四客体材料在所述第二发光层中的掺杂浓度。
  11. 一种有机发光二极管显示器件的制造方法，其包括以下步骤：
    形成阳极层；
    在所述阳极层上形成发光层，所述发光层包括层叠设置的第一发光层和第二发光层，所述第一发光层包括同层设置的第一颜色发光部、第二颜色发光部和第三颜色发光部，所述第二发光层用于发出第一颜色的光，所述第二发光层位于所述第一发光层的一侧并覆盖所述第一发光层，其中，第一发光层使用精细掩模蒸镀形成，第二发光层使用非精细掩模蒸镀形成；
    在所述发光层上形成阴极层，得到有机发光二极管显示器件。
  12. 一种显示面板，其中，包括如权利要求1中任一项所述的有机发光二极管显示器件。
  13. 如权利要求12所述的显示面板，其中，所述第一颜色发光部包括第一主体材料和第一客体材料，所述第二颜色发光部包括第二主体材料，所述第三颜色发光部包括第三主体材料，所述第二发光层包括第四主体材料和第四客体材料。
  14. 如权利要求13所述的显示面板，其中，所述第四主体材料的第一三重激发态能级大于所述第二主体材料的第一三重激发态能级和所述第三主体材料的第一三重激发态能级。
  15. 如权利要求13所述的显示面板，其中，所述第二发光层设置于所述阴极与所述第一发光层之间，所述第四主体材料的最高占据分子轨道能级小于所述第一主体材料的最高占据分子轨道能级。
  16. 如权利要求15所述的显示面板，其中，所述第四主体材料为偏电子型发光材料，所述第一主体材料为偏空穴型发光材料。
  17. 如权利要求13所述的显示面板，其中，所述第二发光层设置于所述阳极与所述第一发光层之间，所述第四主体材料的最高占据分子轨道能级大于所述第一主体材料的最高占据分子轨道能级。
  18. 如权利要求17所述的显示面板，其中，所述第四主体材料为偏空穴型 发光材料，所述第一主体材料为偏电子型发光材料。
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