WO2021261056A1 - Power module - Google Patents

Power module Download PDF

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Publication number
WO2021261056A1
WO2021261056A1 PCT/JP2021/015175 JP2021015175W WO2021261056A1 WO 2021261056 A1 WO2021261056 A1 WO 2021261056A1 JP 2021015175 W JP2021015175 W JP 2021015175W WO 2021261056 A1 WO2021261056 A1 WO 2021261056A1
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WO
WIPO (PCT)
Prior art keywords
power module
substrate
bonding wire
case
resin
Prior art date
Application number
PCT/JP2021/015175
Other languages
French (fr)
Japanese (ja)
Inventor
幸博 熊谷
政光 稲葉
宇幸 串間
Original Assignee
株式会社日立パワーデバイス
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Application filed by 株式会社日立パワーデバイス filed Critical 株式会社日立パワーデバイス
Publication of WO2021261056A1 publication Critical patent/WO2021261056A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to the structure of a power module, and particularly relates to a technique effective for being applied to a power module used in an environment accompanied by vibration such as a railroad vehicle or an automobile.
  • electromechanical and electrical integrated motors that combine electronic control parts and mechanical parts have come to be adopted, and electronic control parts for vibration caused by motor drive. Is required to improve vibration resistance.
  • the ECU and the mechanical / electrical integrated motor are equipped with a power module that integrates power supply control circuits by combining multiple ICs (Integrated Circuits) including power semiconductor elements together with semiconductor elements such as microcomputers and memories. Improving the vibration resistance of modules has become an important issue.
  • ICs Integrated Circuits
  • Patent Document 1 states, "A resin-sealed semiconductor in which a circuit board on which a semiconductor chip and a circuit component are mounted is mounted side by side on the upper surface of a lead frame, and the peripheral region is sealed with a mold resin after connecting the mutual wires.
  • the semiconductor chip is a device, and the semiconductor chip is solder-mounted on a frame, the semiconductor chip is coated with a protective resin, and the circuit board is bonded to the frame using a resin adhesive.
  • a resin encapsulation is provided at the boundary between the mounting area of the semiconductor chip and the mounting area of the insulating substrate in the above, and a dam portion is provided to prevent the protective resin coated on the semiconductor chip and its peripheral region from flowing and diffusing into the mounting area of the circuit board.
  • “Type semiconductor device” is disclosed.
  • Patent Document 2 states that "a substrate, a semiconductor chip fixed on the substrate, a wire connected to the surface of the semiconductor chip by wire bonding, and a 15 ⁇ 10-6 / ° C. that thinly covers the wire bonding portion.
  • a semiconductor power module including a coating resin having the following linear expansion coefficient, a case for accommodating these parts, and a filling resin filled so as to cover the entire parts inside the case from above the coating resin inside the case.
  • the coating resin is formed so as to cover the wire bonding portion while leaving at least an end portion of the upper surface of the semiconductor chip, and the filling resin has a linear expansion coefficient of (17 to 24) ⁇ 10-6 / ° C.
  • “Semiconductor power module made of resin” is disclosed.
  • Patent Document 3 "a substrate, a semiconductor chip not joined to the substrate, a wire having one end connected to the semiconductor chip and the other end connected to the substrate, and the wire being the semiconductor.
  • a semiconductor device comprising a first covering member that covers a first wire connection portion connected to a chip is disclosed.
  • Patent Document 4 states, "A wiring substrate having a first pad electrode, a submount substrate on which a semiconductor element is mounted and having a second pad electrode connected to the semiconductor element, and the first pad electrode.
  • a semiconductor device comprising a bonding wire connected between the surface and the second pad electrode and a coating resin for coating the bonding wire in a sheath shape is disclosed.
  • Japanese Unexamined Patent Publication No. 2005-93635 Japanese Unexamined Patent Publication No. 2005-311019 Japanese Unexamined Patent Publication No. 2017-10994 Japanese Unexamined Patent Publication No. 2019-9171
  • a gel-sealed power module in which a power semiconductor element and an electrode terminal such as a sense terminal or a control terminal are connected by a bonding wire and sealed with a silicone gel is widely used.
  • this gel-sealed power module is adopted for an in-vehicle ECU or an electromechanical integrated motor, the bonding wire connecting the power semiconductor element and the electrode terminal may be broken due to vibration, which may lead to the failure of the power module.
  • Patent Document 1 and Patent Document 2 do not disclose the problem of disconnection of the bonding wire due to vibration in the gel-sealed power module and the method for solving the problem.
  • Patent Document 3 is intended for a semiconductor device having a hollow structure in which the periphery of a semiconductor chip is hollow, and is effective for a slight and temporary impact or vibration, but is like an in-vehicle ECU or a mechanical / electrical integrated motor. Durability becomes a problem when stress due to vibration is constantly generated.
  • Patent Document 4 it is necessary to cover the entire bonding wire in a sheath shape, and there remains a problem in terms of manufacturing method and manufacturing cost.
  • an object of the present invention is to provide a highly reliable power module in a gel-sealed power module capable of suppressing disconnection of the bonding wire inside the module even in a usage environment accompanied by vibration. be.
  • the present invention comprises a base plate having a heat sink, a substrate arranged on the base plate, a power semiconductor chip arranged on the substrate, and a bonding wire connected to the substrate.
  • the bonding wires connected between the substrate and the case only the connecting portion of the bonding wire is coated with a resin having a hardness higher than that of the gel.
  • a base plate having a heat sink, a substrate arranged on the base plate, a power semiconductor chip arranged on the substrate, a bonding wire connected to the substrate, and a bonding wire connected to the substrate are connected to the base plate.
  • the case comprises a case containing the substrate, the power semiconductor chip, and the bonding wire, and a gel filled in the case to seal the substrate, the power semiconductor chip, and the bonding wire. The vicinity of the connection portion of the bonding wire is fixed to the base plate with a screw.
  • a gel-sealed power module in a gel-sealed power module, it is possible to realize a highly reliable power module capable of suppressing disconnection of the bonding wire inside the module even in a usage environment accompanied by vibration.
  • FIG. 1 is a cross-sectional view taken along the line AA'in FIG.
  • FIG. 1 is a cross-sectional view taken along the line AA'in FIG.
  • FIG. 1 is a cross-sectional view taken along the line AA'in FIG.
  • FIG. 1 is a cross-sectional view taken along the line AA'in FIG.
  • FIG. 1 is a cross-sectional view taken along the line AA'in FIG.
  • FIG. 1 is a top view (top view) which shows the schematic structure of the power module which concerns on Example 2 of this invention.
  • FIG. 1 is a figure which shows the modification of FIG. (Modification 1)
  • FIG. (Modification 2) It is sectional drawing which shows a part of the conventional power module.
  • FIG. 1 is a plan view (top view) showing a schematic configuration of the power module 1 of this embodiment.
  • 2 is a BB'direction arrow view (side view) of FIG. 1
  • FIG. 3 is a CC'direction arrow view (side view) of FIG. 1.
  • FIG. 4 is a view (bottom view) seen from the back surface side of FIG. 1.
  • FIG. 5 is a cross-sectional view taken along the line AA'of FIG.
  • FIG. 9 is a partial cross-sectional view of a conventional power module shown for comparison so that the configuration of the present invention can be easily understood, and corresponds to FIG. 5 of the present embodiment.
  • the power module 1 of this embodiment includes a resin case 2 containing a power semiconductor element and a circuit board.
  • the case 2 serves as a protective cover for the power module 1.
  • a plurality of main terminals 5 which are input / output terminals are provided on the upper surface of the power module 1.
  • a metal base plate 3 having a heat sink (cooling fin) 4 is provided at the bottom of the power module 1, and the heat sink (cooling fin) 4 is arranged in a cooling water flow path (not shown). By doing so, the heat generated from the power semiconductor element inside the power module 1 is dissipated.
  • an IGBT Insulated Gate Bipolar Transistor
  • a diode or a power MOSFET It can also be applied to Metal-Oxide-Semiconductor Field Effect Transistor.
  • the power module 1 is provided with electrode terminals 6 such as a sense terminal, a control terminal, and an auxiliary terminal so as to protrude from the upper surface.
  • the base plate 3 is connected and fixed to the case 2 by an adhesive and screws 7 described later.
  • the power module 1 of this embodiment has a metal base plate 3 having a heat sink (cooling fin) 4, a substrate 12 arranged on the base plate 3, and a power arranged on the substrate 12.
  • the semiconductor chip 14, the bonding wire 15 connected to the substrate 12, the resin case 2 connected to the base plate 3 and containing the substrate 12, the power semiconductor chip 14 and the bonding wire 15, and the case 2 are filled.
  • a sealing material 16 for sealing the substrate 12, the power semiconductor chip 14, and the bonding wire 15 is provided.
  • a silicone gel is used for the sealing material 16.
  • the base plate 3 is connected and fixed to the case 2 by the adhesive 8 and the screws 7 (see FIG. 4).
  • the substrate 12 is composed of an insulating layer 9, a metal circuit layer 10 provided on the upper surface (front surface) of the insulating layer 9, and a metal layer 11 provided on the lower surface (back surface) of the insulating layer 9.
  • the substrate 12 is arranged on the base plate 3 by joining the metal layer 11 and the base plate 3 with the solder 13.
  • the power semiconductor chip 14 is arranged on the substrate 12 by joining the metal circuit layer 10 and the power semiconductor chip 14 with the solder 13.
  • An electrode terminal 6 such as a sense terminal, a control terminal, and an auxiliary terminal is arranged in the case 2, and the bonding wire 15 electrically connects the metal circuit layer 10 of the substrate 12 and the electrode terminal 6.
  • the metal circuit layer 10 of the substrate 12 and the bonding wires 15 are used. Only the connection portion and the connection portion between the electrode terminal 6 and the bonding wire 15 are covered with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16.
  • the entire bonding wire 15 including the connection portion is covered with the sealing material (silicone gel) 16 in the same manner as the substrate 12 and the power semiconductor chip 14.
  • the sealing material silicone gel
  • the case 2 and the substrate 12 vibrate separately, so that the bonding wire connecting the case 2 and the substrate 12 is connected. Since the protection of the connection portion of the bonding wire 15 is insufficient only by coating the sealing material (silicone gel) 16, the bonding wire 15, particularly the connection portion of the bonding wire 15, is broken, and the power module fails. May lead to.
  • connection portion of the bonding wire 15 may be placed where disconnection of the connection portion of the bonding wire 15 is unlikely to occur.
  • the connection portion between the metal circuit layer 10 of the substrate 12 and the bonding wire 15 and the connection portion between the electrode terminal 6 and the bonding wire 15 It is also possible to coat only one of them with a resin (hard resin 17) having a hardness higher than that of the encapsulant (silicone gel) 16.
  • the hard resin 17 it is desirable to use a resin having a Young's modulus higher than that of the sealing material (silicone gel) 16.
  • a resin having a Young's modulus higher than that of the sealing material (silicone gel) 16 Specifically, a polyamide-imide resin, an epoxy resin, or the like can be used.
  • FIG. 6 is a plan view (top view) showing a schematic configuration of the power module 1 of this embodiment.
  • 7 and 8 are cross-sectional views showing a part of the power module 1 of FIG. 6, which corresponds to a modification of FIG. 5 of the first embodiment, respectively.
  • the vicinity of the connection portion of the bonding wire 15 of the case 2 is fixed to the base plate 3 by another screw 18 different from the screw 7 described with reference to FIG. ..
  • the vibration of the case 2 can be suppressed and the disconnection of the connection portion of the bonding wire 15 can be prevented.
  • FIG. 6 when the power module 1 is viewed in a plan view (top view), the case 2 in the vicinity of the central portion in the short side direction of the power module 1 is fixed to the base plate 3 with screws 18 to fix the case 2 to the case 2. Vibration can be suppressed more effectively.
  • connection portion of the bonding wire 15 can be reinforced by fixing with the screw 18, the connection portion between the metal circuit layer 10 and the bonding wire 15 and the electrode terminal 6 and the bonding wire 15 as in the first embodiment. It is possible to prevent disconnection of the connection portion of the bonding wire 15 without covering the connection portion with the bonding wire (silicone gel) 16 with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16. That is, it is also possible to adopt the conventional power module structure as shown in FIG.
  • the bonding wire 15 and the entire connection portion thereof are made of a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16 according to the structural design of the power module and the usage environment.
  • a coated power module structure may be adopted, and as shown in FIG. 8, the contact portion between the case 2 and the base plate 3 is further coated with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16.
  • the power module structure may be adopted.
  • connection portion between the metal circuit layer 10 of the substrate 12 and the bonding wire 15 and the electrode terminal 6 and the bonding wire 15 After covering only the connection portion with the sealing material (silicone gel) 16 with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16, the vicinity of the connection portion of the bonding wire 15 of the case 2 as in this embodiment. May be fixed to the base plate 3 with screws 18.
  • the screw 18 needs to be provided so as not to penetrate the base plate 3.
  • the heat sink (cooling fin) 4 of the base plate 3 is arranged in the cooling water flow path, if the screw 18 penetrates the base plate 3, it causes water leakage.
  • the present invention is not limited to the above-described embodiment, but includes various modifications.
  • the above embodiments have been described in detail to aid in understanding of the present invention and are not necessarily limited to those comprising all of the described configurations.
  • it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment and it is also possible to add the configuration of another embodiment to the configuration of one embodiment.

Abstract

Provided is a gel-sealed-type power module, wherein disconnection of a bonding wire within the module can be inhibited even in a usage environment involving a vibration, and a high reliability is obtained. This invention is characterized in being provided with: a base plate having a heat sink; a substrate positioned on the base plate; a power semiconductor chip positioned on the substrate; a bonding wire connected to the substrate; a case that is connected to the base plate and that encloses the substrate, the power semiconductor chip, and the bonding wire; and a gel that is packed in the case and that seals the substrate, the power semiconductor chip, and the bonding wire, the bonding wire connected between the substrate and the case being such that only a connection part of the bonding wire is covered by a resin having a higher hardness than that of the gel.

Description

パワーモジュールPower module
　本発明は、パワーモジュールの構造に係り、特に、鉄道車両や自動車等の振動を伴う環境下で使用されるパワーモジュールに適用して有効な技術に関する。 The present invention relates to the structure of a power module, and particularly relates to a technique effective for being applied to a power module used in an environment accompanied by vibration such as a railroad vehicle or an automobile.
　例えば自動車分野においては、高い環境性能や運転性能を実現するための制御の高度化に対応するために、モータやソレノイド等のアクチュエータにＥＣＵ（Electronic Control Unit）を実装する「機電一体化」技術が求められている。 For example, in the field of automobiles, in order to respond to the sophistication of control to achieve high environmental performance and driving performance, "mechanical and electrical integration" technology that mounts an ECU (Electronic Control Unit) on actuators such as motors and solenoids is available. It has been demanded.
　しかし、高度に電子化された自動車の制御システムでは、ＥＣＵの信頼性が自動車全体の信頼性に及ぼす影響が重大であり、機電一体化を実現するためには、アクチュエータの発熱に耐える高耐熱化に加えて、走行時に発生する車体の振動やエンジンの低周波数振動に耐える高耐振化が必要になる。 However, in highly electronic automobile control systems, the influence of ECU reliability on the reliability of the entire automobile is significant, and in order to realize mechanical and electrical integration, high heat resistance that can withstand the heat generated by the actuator is increased. In addition, it is necessary to have high vibration resistance that can withstand the vibration of the vehicle body and the low frequency vibration of the engine that occur during driving.
　また、家電分野においても、例えばエアコンの小型化・高性能化に伴い、電子制御部品と機械部品を組み合わせた機電一体型のモータが採用されるようになり、モータ駆動に伴う振動に対する電子制御部品の耐振性向上が求められている。 Also, in the field of home appliances, for example, with the miniaturization and higher performance of air conditioners, electromechanical and electrical integrated motors that combine electronic control parts and mechanical parts have come to be adopted, and electronic control parts for vibration caused by motor drive. Is required to improve vibration resistance.
　ＥＣＵや機電一体型モータには、マイコンやメモリ等の半導体素子と共に、パワー半導体素子を含む複数のＩＣ（Integrated Circuit）を組み合わせて電源制御用の回路を集積したパワーモジュールが搭載されており、パワーモジュールの耐振性向上が重要な課題となっている。 The ECU and the mechanical / electrical integrated motor are equipped with a power module that integrates power supply control circuits by combining multiple ICs (Integrated Circuits) including power semiconductor elements together with semiconductor elements such as microcomputers and memories. Improving the vibration resistance of modules has become an important issue.
　本技術分野の背景技術として、例えば、特許文献１のような技術がある。特許文献１には「リードフレームの上面に半導体チップと回路部品を実装した回路基板を並置搭載し、かつその相互間をワイヤ接続した上で周域をモールド樹脂で封止した樹脂封止型半導体装置であり、前記半導体チップはフレームに半田マウントした上で、該半導体チップに保護樹脂をコーティングし、回路基板は樹脂接着剤を用いてフレームに接合した構成になるものにおいて、前記リードフレームの上面における半導体チップの搭載領域と絶縁基板の搭載領域との境界に、半導体チップおよびその周域にコーティングした保護樹脂が回路基板の搭載領域に流動拡散するのを阻止するダム部を設けた樹脂封止型半導体装置」が開示されている。 As a background technology in this technical field, for example, there is a technology such as Patent Document 1. Patent Document 1 states, "A resin-sealed semiconductor in which a circuit board on which a semiconductor chip and a circuit component are mounted is mounted side by side on the upper surface of a lead frame, and the peripheral region is sealed with a mold resin after connecting the mutual wires. The semiconductor chip is a device, and the semiconductor chip is solder-mounted on a frame, the semiconductor chip is coated with a protective resin, and the circuit board is bonded to the frame using a resin adhesive. A resin encapsulation is provided at the boundary between the mounting area of the semiconductor chip and the mounting area of the insulating substrate in the above, and a dam portion is provided to prevent the protective resin coated on the semiconductor chip and its peripheral region from flowing and diffusing into the mounting area of the circuit board. "Type semiconductor device" is disclosed.
　また、特許文献２には「基板と、この基板上に固着された半導体チップと、この半導体チップ表面にワイヤボンディングで接続されたワイヤと、このワイヤボンディング部を薄く覆う１５×１０－６／℃以下の線膨張係数を持つ被覆樹脂と、これら部品を収容するケースと、このケース内部の前記被覆樹脂の上からケース内部品全体を覆うように充填された充填樹脂を備えた半導体パワーモジュールにおいて、前記被覆樹脂は、前記半導体チップの上面の少なくとも端部を残して前記ワイヤボンディング部を覆うように形成し、前記充填樹脂は、（１７～２４）×１０－６／℃の線膨張係数を持つ樹脂とした半導体パワーモジュール」が開示されている。 Further, Patent Document 2 states that "a substrate, a semiconductor chip fixed on the substrate, a wire connected to the surface of the semiconductor chip by wire bonding, and a 15 × 10-6 / ° C. that thinly covers the wire bonding portion. In a semiconductor power module including a coating resin having the following linear expansion coefficient, a case for accommodating these parts, and a filling resin filled so as to cover the entire parts inside the case from above the coating resin inside the case. The coating resin is formed so as to cover the wire bonding portion while leaving at least an end portion of the upper surface of the semiconductor chip, and the filling resin has a linear expansion coefficient of (17 to 24) × 10-6 / ° C. "Semiconductor power module made of resin" is disclosed.
　また、特許文献３には「基板と、前記基板とは非接合とされた半導体チップと、一端が前記半導体チップに接続され、他端が前記基板に接続されたワイヤと、前記ワイヤが前記半導体チップに接続する第１のワイヤ接続部を被覆する第１の被覆部材と、を含む半導体装置」が開示されている。 Further, in Patent Document 3, "a substrate, a semiconductor chip not joined to the substrate, a wire having one end connected to the semiconductor chip and the other end connected to the substrate, and the wire being the semiconductor. A semiconductor device comprising a first covering member that covers a first wire connection portion connected to a chip is disclosed.
　また、特許文献４には「第１のパッド電極を有する配線基板と、半導体素子が搭載され、前記半導体素子に接続された第２のパッド電極を有するサブマウント基板と、前記第１のパッド電極と前記第２のパッド電極との間に接続されたボンディングワイヤと、前記ボンディングワイヤを鞘状に被覆する被覆樹脂と、を有する半導体装置」が開示されている。 Further, Patent Document 4 states, "A wiring substrate having a first pad electrode, a submount substrate on which a semiconductor element is mounted and having a second pad electrode connected to the semiconductor element, and the first pad electrode. A semiconductor device comprising a bonding wire connected between the surface and the second pad electrode and a coating resin for coating the bonding wire in a sheath shape is disclosed.
特開２００５－９３６３５号公報Japanese Unexamined Patent Publication No. 2005-93635 特開２００５－３１１０１９号公報Japanese Unexamined Patent Publication No. 2005-311019 特開２０１７－１０９９４号公報Japanese Unexamined Patent Publication No. 2017-10994 特開２０１９－９１７１号公報Japanese Unexamined Patent Publication No. 2019-9171
　上述したように、様々な分野において機電一体化が進んでおり、パワーモジュールに対する耐振性向上の要求が高まっている。 As mentioned above, the integration of mechatronics is progressing in various fields, and the demand for improving the vibration resistance of power modules is increasing.
　代表的なパワーモジュールとして、パワー半導体素子とセンス端子や制御端子等の電極端子をボンディングワイヤで接続し、それらをシリコーンゲルで封止したゲル封止型のパワーモジュールが広く普及しているが、このゲル封止型のパワーモジュールを車載ＥＣＵや機電一体型モータに採用した場合、振動によりパワー半導体素子と電極端子を接続するボンディングワイヤが断線し、パワーモジュールの故障に繋がる可能性がある。 As a typical power module, a gel-sealed power module in which a power semiconductor element and an electrode terminal such as a sense terminal or a control terminal are connected by a bonding wire and sealed with a silicone gel is widely used. When this gel-sealed power module is adopted for an in-vehicle ECU or an electromechanical integrated motor, the bonding wire connecting the power semiconductor element and the electrode terminal may be broken due to vibration, which may lead to the failure of the power module.
　しかしながら、上記特許文献１及び特許文献２には、上記のゲル封止型のパワーモジュールでの振動によるボンディングワイヤの断線の課題やそれを解決するための方法は開示されていない。 However, Patent Document 1 and Patent Document 2 do not disclose the problem of disconnection of the bonding wire due to vibration in the gel-sealed power module and the method for solving the problem.
　また、上記特許文献３は、半導体チップの周囲を中空とした中空構造の半導体装置を対象としており、軽微で一時的な衝撃や振動には有効であるが、車載ＥＣＵや機電一体型モータのように振動による応力が恒常的に発生するような場合には耐久性が問題となる。 Further, Patent Document 3 is intended for a semiconductor device having a hollow structure in which the periphery of a semiconductor chip is hollow, and is effective for a slight and temporary impact or vibration, but is like an in-vehicle ECU or a mechanical / electrical integrated motor. Durability becomes a problem when stress due to vibration is constantly generated.
　また、上記特許文献４では、ボンディングワイヤ全体を鞘状に被覆する必要があり、製造方法や製造コストの面で課題が残る。 Further, in Patent Document 4, it is necessary to cover the entire bonding wire in a sheath shape, and there remains a problem in terms of manufacturing method and manufacturing cost.
　そこで、本発明の目的は、ゲル封止型のパワーモジュールにおいて、振動を伴う使用環境下であっても、モジュール内部のボンディングワイヤの断線を抑制可能な信頼性の高いパワーモジュールを提供することにある。 Therefore, an object of the present invention is to provide a highly reliable power module in a gel-sealed power module capable of suppressing disconnection of the bonding wire inside the module even in a usage environment accompanied by vibration. be.
　上記課題を解決するために、本発明は、ヒートシンクを有するベースプレートと、前記ベースプレート上に配置された基板と、前記基板上に配置されたパワー半導体チップと、前記基板に接続されたボンディングワイヤと、前記ベースプレートに接続されて、前記基板と前記パワー半導体チップと前記ボンディングワイヤを内包するケースと、前記ケース内に充填されて、前記基板と前記パワー半導体チップと前記ボンディングワイヤを封止するゲルと、を備え、前記基板と前記ケースとの間に接続された前記ボンディングワイヤのうち、前記ボンディングワイヤの接続部のみ前記ゲルよりも硬度が高い樹脂で被覆されていることを特徴とする。 In order to solve the above problems, the present invention comprises a base plate having a heat sink, a substrate arranged on the base plate, a power semiconductor chip arranged on the substrate, and a bonding wire connected to the substrate. A case connected to the base plate and containing the substrate, the power semiconductor chip, and the bonding wire, and a gel filled in the case to seal the substrate, the power semiconductor chip, and the bonding wire. Among the bonding wires connected between the substrate and the case, only the connecting portion of the bonding wire is coated with a resin having a hardness higher than that of the gel.
　また、本発明は、ヒートシンクを有するベースプレートと、前記ベースプレート上に配置された基板と、前記基板上に配置されたパワー半導体チップと、前記基板に接続されたボンディングワイヤと、前記ベースプレートに接続されて、前記基板と前記パワー半導体チップと前記ボンディングワイヤを内包するケースと、前記ケース内に充填されて、前記基板と前記パワー半導体チップと前記ボンディングワイヤを封止するゲルと、を備え、前記ケースの前記ボンディングワイヤの接続部近傍が前記ベースプレートにネジで固定されていることを特徴とする。 Further, in the present invention, a base plate having a heat sink, a substrate arranged on the base plate, a power semiconductor chip arranged on the substrate, a bonding wire connected to the substrate, and a bonding wire connected to the substrate are connected to the base plate. The case comprises a case containing the substrate, the power semiconductor chip, and the bonding wire, and a gel filled in the case to seal the substrate, the power semiconductor chip, and the bonding wire. The vicinity of the connection portion of the bonding wire is fixed to the base plate with a screw.
　本発明によれば、ゲル封止型のパワーモジュールにおいて、振動を伴う使用環境下であっても、モジュール内部のボンディングワイヤの断線を抑制可能な信頼性の高いパワーモジュールを実現することができる。 According to the present invention, in a gel-sealed power module, it is possible to realize a highly reliable power module capable of suppressing disconnection of the bonding wire inside the module even in a usage environment accompanied by vibration.
　上記した以外の課題、構成及び効果は、以下の実施形態の説明により明らかにされる。 Issues, configurations and effects other than those described above will be clarified by the explanation of the following embodiments.
本発明の実施例１に係るパワーモジュールの概略構成を示す平面図（上面図）である。It is a top view (top view) which shows the schematic structure of the power module which concerns on Example 1 of this invention. 図１のＢ－Ｂ’方向矢視図（側面図）である。It is a BB'direction arrow view (side view) of FIG. 図１のＣ－Ｃ’方向矢視図（側面図）である。It is a CC'direction arrow view (side view) of FIG. 図１の裏面側から見た図（底面図）である。It is a view (bottom view) seen from the back surface side of FIG. 図１のＡ－Ａ’方向矢視図（断面図）である。FIG. 1 is a cross-sectional view taken along the line AA'in FIG. 本発明の実施例２に係るパワーモジュールの概略構成を示す平面図（上面図）である。It is a top view (top view) which shows the schematic structure of the power module which concerns on Example 2 of this invention. 図５の変形例を示す図である。（変形例１）It is a figure which shows the modification of FIG. (Modification 1) 図５の変形例を示す図である。（変形例２）It is a figure which shows the modification of FIG. (Modification 2) 従来のパワーモジュールの一部を示す断面図である。It is sectional drawing which shows a part of the conventional power module.
　以下、図面を用いて本発明の実施例を説明する。なお、各図面において同一の構成については同一の符号を付し、重複する部分についてはその詳細な説明は省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each drawing, the same components are designated by the same reference numerals, and the detailed description of the overlapping portions will be omitted.
　図１から図５、及び図９を参照して、本発明の実施例１に係るゲル封止型のパワーモジュールについて説明する。図１は、本実施例のパワーモジュール１の概略構成を示す平面図（上面図）である。図２は、図１のＢ－Ｂ’方向矢視図（側面図）であり、図３は、図１のＣ－Ｃ’方向矢視図（側面図）である。図４は、図１の裏面側から見た図（底面図）である。また、図５は、図１のＡ－Ａ’方向矢視図（断面図）である。なお、図９は、本発明の構成が分かり易くなるように、比較のために示す従来のパワーモジュールの一部断面図であり、本実施例の図５に対応している。 The gel-sealed power module according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 5 and 9. FIG. 1 is a plan view (top view) showing a schematic configuration of the power module 1 of this embodiment. 2 is a BB'direction arrow view (side view) of FIG. 1, and FIG. 3 is a CC'direction arrow view (side view) of FIG. 1. FIG. 4 is a view (bottom view) seen from the back surface side of FIG. 1. Further, FIG. 5 is a cross-sectional view taken along the line AA'of FIG. Note that FIG. 9 is a partial cross-sectional view of a conventional power module shown for comparison so that the configuration of the present invention can be easily understood, and corresponds to FIG. 5 of the present embodiment.
　本実施例のパワーモジュール１は、図１に示すように、パワー半導体素子や回路基板を内包する樹脂製のケース２を備えている。ケース２は、パワーモジュール１の保護カバーの役割を果たしている。パワーモジュール１の上面には、入出力端子である主端子５が複数設けられている。 As shown in FIG. 1, the power module 1 of this embodiment includes a resin case 2 containing a power semiconductor element and a circuit board. The case 2 serves as a protective cover for the power module 1. A plurality of main terminals 5 which are input / output terminals are provided on the upper surface of the power module 1.
　図２及び図３に示すように、パワーモジュール１の底部には、ヒートシンク（冷却フィン）４を有する金属製のベースプレート３を備えており、ヒートシンク（冷却フィン）４を図示しない冷却水流路に配置することで、パワーモジュール１内部のパワー半導体素子からの発熱を放熱する。 As shown in FIGS. 2 and 3, a metal base plate 3 having a heat sink (cooling fin) 4 is provided at the bottom of the power module 1, and the heat sink (cooling fin) 4 is arranged in a cooling water flow path (not shown). By doing so, the heat generated from the power semiconductor element inside the power module 1 is dissipated.
　なお、本実施例では、パワーモジュール１に内蔵されるパワー半導体素子として、ＩＧＢＴ（Insulated Gate Bipolar Transistor）を前提に説明するが、本発明はこれに限定されるものではなく、ダイオードやパワーＭＯＳＦＥＴ（Metal-Oxide-Semiconductor Field Effect Transistor）等にも適用可能である。 In this embodiment, an IGBT (Insulated Gate Bipolar Transistor) is described as a power semiconductor element built in the power module 1, but the present invention is not limited to this, and a diode or a power MOSFET ( It can also be applied to Metal-Oxide-Semiconductor Field Effect Transistor).
　パワーモジュール１には、センス端子や制御端子、補助端子等の電極端子６が、上面から突出するように設けられている。 The power module 1 is provided with electrode terminals 6 such as a sense terminal, a control terminal, and an auxiliary terminal so as to protrude from the upper surface.
　図４に示すように、ベースプレート３は、後述する接着剤及びネジ７によりケース２に接続固定されている。 As shown in FIG. 4, the base plate 3 is connected and fixed to the case 2 by an adhesive and screws 7 described later.
　図５を用いて、本実施例のパワーモジュール１の内部構造を詳しく説明する。 The internal structure of the power module 1 of this embodiment will be described in detail with reference to FIG.
　本実施例のパワーモジュール１は、図５に示すように、ヒートシンク（冷却フィン）４を有する金属製のベースプレート３と、ベースプレート３上に配置された基板１２と、基板１２上に配置されたパワー半導体チップ１４と、基板１２に接続されたボンディングワイヤ１５と、ベースプレート３に接続されて、基板１２とパワー半導体チップ１４とボンディングワイヤ１５を内包する樹脂製のケース２と、ケース２内に充填されて、基板１２とパワー半導体チップ１４とボンディングワイヤ１５を封止する封止材１６を備えている。封止材１６には、例えば、シリコーンゲルが用いられる。 As shown in FIG. 5, the power module 1 of this embodiment has a metal base plate 3 having a heat sink (cooling fin) 4, a substrate 12 arranged on the base plate 3, and a power arranged on the substrate 12. The semiconductor chip 14, the bonding wire 15 connected to the substrate 12, the resin case 2 connected to the base plate 3 and containing the substrate 12, the power semiconductor chip 14 and the bonding wire 15, and the case 2 are filled. A sealing material 16 for sealing the substrate 12, the power semiconductor chip 14, and the bonding wire 15 is provided. For the sealing material 16, for example, a silicone gel is used.
　上述したように、ベースプレート３は、接着剤８及びネジ７（図４参照）によりケース２に接続固定されている。 As described above, the base plate 3 is connected and fixed to the case 2 by the adhesive 8 and the screws 7 (see FIG. 4).
　基板１２は、絶縁層９と、絶縁層９の上面（表面）に設けられた金属回路層１０と、絶縁層９の下面（裏面）に設けられた金属層１１で構成されている。 The substrate 12 is composed of an insulating layer 9, a metal circuit layer 10 provided on the upper surface (front surface) of the insulating layer 9, and a metal layer 11 provided on the lower surface (back surface) of the insulating layer 9.
　そして、基板１２は、はんだ１３により金属層１１とベースプレート３を接合することで、ベースプレート３上に配置されている。 Then, the substrate 12 is arranged on the base plate 3 by joining the metal layer 11 and the base plate 3 with the solder 13.
　また、はんだ１３により金属回路層１０とパワー半導体チップ１４を接合することで、基板１２上にパワー半導体チップ１４が配置されている。 Further, the power semiconductor chip 14 is arranged on the substrate 12 by joining the metal circuit layer 10 and the power semiconductor chip 14 with the solder 13.
　ケース２には、センス端子や制御端子、補助端子等の電極端子６が配置されており、ボンディングワイヤ１５は、基板１２の金属回路層１０と電極端子６を電気的に接続している。 An electrode terminal 6 such as a sense terminal, a control terminal, and an auxiliary terminal is arranged in the case 2, and the bonding wire 15 electrically connects the metal circuit layer 10 of the substrate 12 and the electrode terminal 6.
　ここで、図５に示すように、本実施例のパワーモジュール１では、基板１２とケース２との間に接続されたボンディングワイヤ１５のうち、基板１２の金属回路層１０とボンディングワイヤ１５との接続部及び電極端子６とボンディングワイヤ１５との接続部のみを封止材（シリコーンゲル）１６よりも硬度が高い樹脂（硬質樹脂１７）で被覆している。 Here, as shown in FIG. 5, in the power module 1 of the present embodiment, of the bonding wires 15 connected between the substrate 12 and the case 2, the metal circuit layer 10 of the substrate 12 and the bonding wires 15 are used. Only the connection portion and the connection portion between the electrode terminal 6 and the bonding wire 15 are covered with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16.
　図９に示す従来のパワーモジュールでは、接続部を含むボンディングワイヤ１５全体が、基板１２やパワー半導体チップ１４と同じように封止材（シリコーンゲル）１６で被覆されている。車載ＥＣＵや機電一体型モータのように振動による応力が恒常的に発生するような場合、特にケース２と基板１２とが別々に振動するため、ケース２と基板１２との間を接続するボンディングワイヤ１５は、封止材（シリコーンゲル）１６の被覆のみでは、ボンディングワイヤ１５の接続部の保護が不十分なため、ボンディングワイヤ１５、特に、ボンディングワイヤ１５の接続部が断線し、パワーモジュールの故障に繋がる恐れがある。 In the conventional power module shown in FIG. 9, the entire bonding wire 15 including the connection portion is covered with the sealing material (silicone gel) 16 in the same manner as the substrate 12 and the power semiconductor chip 14. When stress due to vibration is constantly generated as in an in-vehicle ECU or a motor integrated with mechanical and electrical equipment, the case 2 and the substrate 12 vibrate separately, so that the bonding wire connecting the case 2 and the substrate 12 is connected. Since the protection of the connection portion of the bonding wire 15 is insufficient only by coating the sealing material (silicone gel) 16, the bonding wire 15, particularly the connection portion of the bonding wire 15, is broken, and the power module fails. May lead to.
　そこで、基板１２とケース２との間に接続されたボンディングワイヤ１５のうち、基板１２の金属回路層１０とボンディングワイヤ１５との接続部及び電極端子６とボンディングワイヤ１５との接続部のみを封止材（シリコーンゲル）１６よりも硬度が高い樹脂（硬質樹脂１７）で被覆することで、ボンディングワイヤ１５の接続部の断線を防止することができる。 Therefore, of the bonding wires 15 connected between the substrate 12 and the case 2, only the connection portion between the metal circuit layer 10 of the substrate 12 and the bonding wire 15 and the connection portion between the electrode terminal 6 and the bonding wire 15 are sealed. By coating with a resin (hard resin 17) having a hardness higher than that of the stopper (silicone gel) 16, it is possible to prevent disconnection of the connection portion of the bonding wire 15.
　なお、パワーモジュールの構造設計や使用環境により、ボンディングワイヤ１５の接続部の断線が起こり難い箇所がある場合が考えられる。その場合は、基板１２とケース２との間に接続されたボンディングワイヤ１５のうち、基板１２の金属回路層１０とボンディングワイヤ１５との接続部及び電極端子６とボンディングワイヤ１５との接続部のいずれか一方のみを封止材（シリコーンゲル）１６よりも硬度が高い樹脂（硬質樹脂１７）で被覆することも可能である。 Depending on the structural design of the power module and the usage environment, it is conceivable that there may be places where disconnection of the connection portion of the bonding wire 15 is unlikely to occur. In that case, of the bonding wires 15 connected between the substrate 12 and the case 2, the connection portion between the metal circuit layer 10 of the substrate 12 and the bonding wire 15 and the connection portion between the electrode terminal 6 and the bonding wire 15 It is also possible to coat only one of them with a resin (hard resin 17) having a hardness higher than that of the encapsulant (silicone gel) 16.
　ボンディングワイヤ１５の全体ではなく、必要な箇所のみを封止材（シリコーンゲル）１６よりも硬度が高い樹脂（硬質樹脂１７）で被覆することで、生産性やコスト面でのデメリットを抑制しつつ、振動を伴う使用環境下であっても、モジュール内部のボンディングワイヤ１５の断線を抑制することができる。 By covering only the necessary parts of the bonding wire 15 with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16, the disadvantages in terms of productivity and cost are suppressed. Even in a usage environment accompanied by vibration, it is possible to suppress disconnection of the bonding wire 15 inside the module.
　なお、硬質樹脂１７には、封止材（シリコーンゲル）１６よりもヤング率が高い樹脂を用いるのが望ましい。具体的には、ポリアミドイミド樹脂やエポキシ樹脂等を用いることができる。 For the hard resin 17, it is desirable to use a resin having a Young's modulus higher than that of the sealing material (silicone gel) 16. Specifically, a polyamide-imide resin, an epoxy resin, or the like can be used.
　図６から図８を参照して、本発明の実施例２に係るゲル封止型のパワーモジュールについて説明する。図６は、本実施例のパワーモジュール１の概略構成を示す平面図（上面図）である。図７及び図８は、図６のパワーモジュール１の一部を示す断面図であり、それぞれ実施例１の図５の変形例に相当する。 The gel-sealed power module according to the second embodiment of the present invention will be described with reference to FIGS. 6 to 8. FIG. 6 is a plan view (top view) showing a schematic configuration of the power module 1 of this embodiment. 7 and 8 are cross-sectional views showing a part of the power module 1 of FIG. 6, which corresponds to a modification of FIG. 5 of the first embodiment, respectively.
　本実施例のパワーモジュール１は、図６に示すように、図４で説明したネジ７とは異なる別のネジ１８により、ケース２のボンディングワイヤ１５の接続部近傍をベースプレート３に固定している。 As shown in FIG. 6, in the power module 1 of this embodiment, the vicinity of the connection portion of the bonding wire 15 of the case 2 is fixed to the base plate 3 by another screw 18 different from the screw 7 described with reference to FIG. ..
　ケース２のボンディングワイヤ１５の接続部近傍をベースプレート３にネジ１８で固定することにより、ケース２の振動が抑制されて、ボンディングワイヤ１５の接続部の断線を防止することができる。特に、図６のように、パワーモジュール１を平面視（上面視）した際のパワーモジュール１の短辺方向の中央部近傍におけるケース２をベースプレート３にネジ１８により固定することで、ケース２の振動をより効果的に抑制することができる。 By fixing the vicinity of the connection portion of the bonding wire 15 of the case 2 to the base plate 3 with the screw 18, the vibration of the case 2 can be suppressed and the disconnection of the connection portion of the bonding wire 15 can be prevented. In particular, as shown in FIG. 6, when the power module 1 is viewed in a plan view (top view), the case 2 in the vicinity of the central portion in the short side direction of the power module 1 is fixed to the base plate 3 with screws 18 to fix the case 2 to the case 2. Vibration can be suppressed more effectively.
　なお、本実施例では、ネジ１８による固定により、ボンディングワイヤ１５の接続部を補強できるため、実施例１のように金属回路層１０とボンディングワイヤ１５との接続部や電極端子６とボンディングワイヤ１５との接続部を封止材（シリコーンゲル）１６よりも硬度が高い樹脂（硬質樹脂１７）で被覆することなく、ボンディングワイヤ１５の接続部の断線を防止することができる。つまり、図９に示すような従来のパワーモジュール構造を採用することも可能である。 In this embodiment, since the connection portion of the bonding wire 15 can be reinforced by fixing with the screw 18, the connection portion between the metal circuit layer 10 and the bonding wire 15 and the electrode terminal 6 and the bonding wire 15 as in the first embodiment. It is possible to prevent disconnection of the connection portion of the bonding wire 15 without covering the connection portion with the bonding wire (silicone gel) 16 with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16. That is, it is also possible to adopt the conventional power module structure as shown in FIG.
　また、パワーモジュールの構造設計や使用環境に応じて、図７に示すように、ボンディングワイヤ１５及びその接続部全体を封止材（シリコーンゲル）１６よりも硬度が高い樹脂（硬質樹脂１７）で被覆したパワーモジュール構造を採用してもよく、図８に示すように、さらにケース２とベースプレート３の接触部を封止材（シリコーンゲル）１６よりも硬度が高い樹脂（硬質樹脂１７）で被覆したパワーモジュール構造を採用してもよい。 Further, as shown in FIG. 7, the bonding wire 15 and the entire connection portion thereof are made of a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16 according to the structural design of the power module and the usage environment. A coated power module structure may be adopted, and as shown in FIG. 8, the contact portion between the case 2 and the base plate 3 is further coated with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16. The power module structure may be adopted.
　また、実施例１のように、基板１２とケース２との間に接続されたボンディングワイヤ１５のうち、基板１２の金属回路層１０とボンディングワイヤ１５との接続部及び電極端子６とボンディングワイヤ１５との接続部のみを封止材（シリコーンゲル）１６よりも硬度が高い樹脂（硬質樹脂１７）で被覆したうえで、さらに、本実施例のように、ケース２のボンディングワイヤ１５の接続部近傍をベースプレート３にネジ１８で固定してもよい。 Further, as in the first embodiment, among the bonding wires 15 connected between the substrate 12 and the case 2, the connection portion between the metal circuit layer 10 of the substrate 12 and the bonding wire 15 and the electrode terminal 6 and the bonding wire 15 After covering only the connection portion with the sealing material (silicone gel) 16 with a resin (hard resin 17) having a hardness higher than that of the sealing material (silicone gel) 16, the vicinity of the connection portion of the bonding wire 15 of the case 2 as in this embodiment. May be fixed to the base plate 3 with screws 18.
　ネジ１８による固定との組み合わせにより、ボンディングワイヤ１５の接続部の断線をより確実に防止することができる。 By combining with fixing with screws 18, it is possible to more reliably prevent disconnection of the connection portion of the bonding wire 15.
　なお、ネジ１８は、ネジ７とは異なり、ベースプレート３を貫通しないように設ける必要がある。上述したように、ベースプレート３のヒートシンク（冷却フィン）４は冷却水流路に配置されるため、ネジ１８がベースプレート３を貫通した場合、水漏れの原因となるためである。 Note that, unlike the screw 7, the screw 18 needs to be provided so as not to penetrate the base plate 3. As described above, since the heat sink (cooling fin) 4 of the base plate 3 is arranged in the cooling water flow path, if the screw 18 penetrates the base plate 3, it causes water leakage.
　なお、本発明は上記した実施例に限定されるものではなく、様々な変形例が含まれる。例えば、上記の実施例は本発明に対する理解を助けるために詳細に説明したものであり、必ずしも説明した全ての構成を備えるものに限定されるものではない。また、ある実施例の構成の一部を他の実施例の構成に置き換えることが可能であり、また、ある実施例の構成に他の実施例の構成を加えることも可能である。また、各実施例の構成の一部について、他の構成の追加・削除・置換をすることが可能である。 The present invention is not limited to the above-described embodiment, but includes various modifications. For example, the above embodiments have been described in detail to aid in understanding of the present invention and are not necessarily limited to those comprising all of the described configurations. Further, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Further, it is possible to add / delete / replace a part of the configuration of each embodiment with another configuration.
　１…パワーモジュール、２…ケース、３…ベースプレート、４…ヒートシンク（冷却フィン）、５…主端子（入出力端子）、６…電極端子（センス端子，制御端子，補助端子）、７…ネジ、８…接着剤、９…絶縁層、１０…金属回路層、１１…金属層、１２…基板、１３…はんだ、１４…パワー半導体チップ、１５…ボンディングワイヤ、１６…封止材（シリコーンゲル）、１７…硬質樹脂（被覆樹脂）、１８…ネジ 1 ... Power module, 2 ... Case, 3 ... Base plate, 4 ... Heat sink (cooling fin), 5 ... Main terminal (input / output terminal), 6 ... Electrode terminal (sense terminal, control terminal, auxiliary terminal), 7 ... Screw, 8 ... Adhesive, 9 ... Insulation layer, 10 ... Metal circuit layer, 11 ... Metal layer, 12 ... Substrate, 13 ... Solder, 14 ... Power semiconductor chip, 15 ... Bonding wire, 16 ... Encapsulant (silicone gel), 17 ... Hard resin (coating resin), 18 ... Screw

Claims (15)

  1. 　ヒートシンクを有するベースプレートと、
    　前記ベースプレート上に配置された基板と、
    　前記基板上に配置されたパワー半導体チップと、
    　前記基板に接続されたボンディングワイヤと、
    　前記ベースプレートに接続されて、前記基板と前記パワー半導体チップと前記ボンディングワイヤを内包するケースと、
    　前記ケース内に充填されて、前記基板と前記パワー半導体チップと前記ボンディングワイヤを封止するゲルと、を備え、
    　前記基板と前記ケースとの間に接続された前記ボンディングワイヤのうち、前記ボンディングワイヤの接続部のみ前記ゲルよりも硬度が高い樹脂で被覆されていることを特徴とするパワーモジュール。     With a base plate with a heat sink,
    The substrate placed on the base plate and
    The power semiconductor chip arranged on the substrate and
    The bonding wire connected to the substrate and
    A case connected to the base plate and containing the substrate, the power semiconductor chip, and the bonding wire.
    The case is filled with a gel for sealing the substrate, the power semiconductor chip, and the bonding wire.
    A power module characterized in that, of the bonding wires connected between the substrate and the case, only the connecting portion of the bonding wire is coated with a resin having a hardness higher than that of the gel.
  2. 　請求項１に記載のパワーモジュールにおいて、
    　前記ケースに配置された電極端子を備え、
    　前記ボンディングワイヤは、前記基板の金属回路層と前記電極端子を電気的に接続し、　前記基板と前記ケースとの間に接続された前記ボンディングワイヤのうち、前記金属回路層と前記ボンディングワイヤとの接続部および前記電極端子と前記ボンディングワイヤとの接続部のみ前記ゲルよりも硬度が高い樹脂で被覆されていることを特徴とするパワーモジュール。     In the power module according to claim 1,
    Equipped with electrode terminals arranged in the case,
    The bonding wire electrically connects the metal circuit layer of the substrate and the electrode terminal, and among the bonding wires connected between the substrate and the case, the metal circuit layer and the bonding wire are connected to each other. A power module characterized in that only the connection portion and the connection portion between the electrode terminal and the bonding wire are coated with a resin having a hardness higher than that of the gel.
  3. 　請求項１または２に記載のパワーモジュールにおいて、
    　前記ケースの前記ボンディングワイヤの接続部近傍が前記ベースプレートにネジで固定されていることを特徴とするパワーモジュール。     In the power module according to claim 1 or 2.
    A power module characterized in that the vicinity of a connection portion of the bonding wire of the case is fixed to the base plate with a screw.
  4. 　請求項３に記載のパワーモジュールにおいて、
    　前記ネジは、前記ベースプレートを貫通していないことを特徴とするパワーモジュール。     In the power module according to claim 3,
    The power module is characterized in that the screw does not penetrate the base plate.
  5. 　請求項１または２に記載のパワーモジュールにおいて、
    　前記樹脂は、前記ゲルよりもヤング率が高い樹脂であることを特徴とするパワーモジュール。     In the power module according to claim 1 or 2.
    The resin is a power module characterized by having a higher Young's modulus than the gel.
  6. 　請求項５に記載のパワーモジュールにおいて、
    　前記樹脂は、ポリアミドイミド樹脂およびエポキシ樹脂のいずれかであることを特徴とするパワーモジュール。     In the power module according to claim 5,
    The resin is a power module characterized by being either a polyamide-imide resin or an epoxy resin.
  7. 　ヒートシンクを有するベースプレートと、
    　前記ベースプレート上に配置された基板と、
    　前記基板上に配置されたパワー半導体チップと、
    　前記基板に接続されたボンディングワイヤと、
    　前記ベースプレートに接続されて、前記基板と前記パワー半導体チップと前記ボンディングワイヤを内包するケースと、
    　前記ケース内に充填されて、前記基板と前記パワー半導体チップと前記ボンディングワイヤを封止するゲルと、を備え、
    　前記ケースの前記ボンディングワイヤの接続部近傍が前記ベースプレートにネジで固定されていることを特徴とするパワーモジュール。     With a base plate with a heat sink,
    The substrate placed on the base plate and
    The power semiconductor chip arranged on the substrate and
    The bonding wire connected to the substrate and
    A case connected to the base plate and containing the substrate, the power semiconductor chip, and the bonding wire.
    The case is filled with a gel for sealing the substrate, the power semiconductor chip, and the bonding wire.
    A power module characterized in that the vicinity of a connection portion of the bonding wire of the case is fixed to the base plate with a screw.
  8. 　請求項７に記載のパワーモジュールにおいて、
    　前記パワーモジュールを平面視した際の前記パワーモジュールの短辺方向の中央部近傍における前記ケースが前記ベースプレートにネジで固定されていることを特徴とするパワーモジュール。     In the power module according to claim 7,
    A power module characterized in that the case in the vicinity of the central portion in the short side direction of the power module when the power module is viewed in a plan view is fixed to the base plate with screws.
  9. 　請求項７に記載のパワーモジュールにおいて、
    　前記ボンディングワイヤおよびその接続部が前記ゲルよりも硬度が高い樹脂で被覆されていることを特徴とするパワーモジュール。     In the power module according to claim 7,
    A power module characterized in that the bonding wire and its connection portion are coated with a resin having a hardness higher than that of the gel.
  10. 　請求項７に記載のパワーモジュールにおいて、
    　前記基板と前記ケースとの間に接続された前記ボンディングワイヤのうち、前記基板と前記ボンディングワイヤとの接続部のみ前記ゲルよりも硬度が高い樹脂で被覆されていることを特徴とするパワーモジュール。     In the power module according to claim 7,
    A power module characterized in that, of the bonding wires connected between the substrate and the case, only the connection portion between the substrate and the bonding wire is coated with a resin having a hardness higher than that of the gel.
  11. 　請求項９に記載のパワーモジュールにおいて、
    　前記ケースと前記ベースプレートの接触部が前記ゲルよりも硬度が高い樹脂で被覆されていることを特徴とするパワーモジュール。     In the power module according to claim 9,
    A power module characterized in that a contact portion between the case and the base plate is coated with a resin having a hardness higher than that of the gel.
  12. 　請求項７に記載のパワーモジュールにおいて、
    　前記ケースに配置された電極端子を備え、
    　前記ボンディングワイヤは、前記基板の金属回路層と前記電極端子を電気的に接続し、　前記基板と前記ケースとの間に接続された前記ボンディングワイヤのうち、前記金属回路層と前記ボンディングワイヤとの接続部および前記電極端子と前記ボンディングワイヤとの接続部のみ前記ゲルよりも硬度が高い樹脂で被覆されていることを特徴とするパワーモジュール。     In the power module according to claim 7,
    Equipped with electrode terminals arranged in the case,
    The bonding wire electrically connects the metal circuit layer of the substrate and the electrode terminal, and among the bonding wires connected between the substrate and the case, the metal circuit layer and the bonding wire are connected to each other. A power module characterized in that only the connection portion and the connection portion between the electrode terminal and the bonding wire are coated with a resin having a hardness higher than that of the gel.
  13. 　請求項７に記載のパワーモジュールにおいて、
    　前記ネジは、前記ベースプレートを貫通していないことを特徴とするパワーモジュール。     In the power module according to claim 7,
    The power module is characterized in that the screw does not penetrate the base plate.
  14. 　請求項９から１２のいずれか１項に記載のパワーモジュールにおいて、
    　前記樹脂は、前記ゲルよりもヤング率が高い樹脂であることを特徴とするパワーモジュール。     In the power module according to any one of claims 9 to 12.
    The resin is a power module characterized by having a higher Young's modulus than the gel.
  15. 　請求項１４に記載のパワーモジュールにおいて、
    　前記樹脂は、ポリアミドイミド樹脂およびエポキシ樹脂のいずれかであることを特徴とするパワーモジュール。     In the power module according to claim 14,
    The resin is a power module characterized by being either a polyamide-imide resin or an epoxy resin.
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