WO2021253923A1 - 量子点发光二极管器件及其制备方法和显示面板 - Google Patents

量子点发光二极管器件及其制备方法和显示面板 Download PDF

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WO2021253923A1
WO2021253923A1 PCT/CN2021/084808 CN2021084808W WO2021253923A1 WO 2021253923 A1 WO2021253923 A1 WO 2021253923A1 CN 2021084808 W CN2021084808 W CN 2021084808W WO 2021253923 A1 WO2021253923 A1 WO 2021253923A1
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hole transport
light
quantum dot
emitting diode
layer
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French (fr)
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龚浩天
庄锦勇
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广东聚华印刷显示技术有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Definitions

  • This application relates to the technical field of quantum dots, in particular to a quantum dot light-emitting diode device, a preparation method thereof, and a display panel.
  • Quantum dots are nanocrystals with a radius smaller than or close to the Bohr radius of the exciton, and their particle size is usually between 1 and 20 nm.
  • the quantum dots used in the display field generally have a core-shell structure, and the movement of holes and electrons inside is restricted in all directions, and the surface is generally passivated by ligands. Since the emission wavelength of quantum dots can be adjusted by controlling the particle size, the emission spectrum line width is narrow, the color purity is high, the electron mobility is high, and the light stability is good.
  • QLED quantum dot light-emitting diodes
  • the inverted device structure has received extensive attention due to its many advantages.
  • One of the biggest advantages of the inverted device structure is that it can be directly integrated with the n-type TFT, thereby reducing the driving voltage and improving the stability of the device.
  • most of the hole transport layers in the inverted device structure adopt the method of evaporation. This is because the traditional solution method dissolves the hole transport layer in the solvent to basically destroy the quantum dot layer to varying degrees.
  • the evaporation method has a relatively high cost and is not suitable for large-area preparation.
  • the exemplary embodiments of the present application provide a novel quantum dot light-emitting diode device, a preparation method thereof, and a display panel, which can be prepared by a full-solution method without damaging the quantum dot layer, have low preparation cost, and are suitable for large-area preparation .
  • This application provides a quantum dot light emitting diode device, including:
  • a light-emitting layer is disposed between the cathode and the anode, and the material of the light-emitting layer includes a cross-linked polymer formed of a first hole transport material and quantum dots embedded in the cross-linked polymer ;as well as
  • a hole transport layer is disposed between the light-emitting layer and the anode, and the material of the hole transport layer is a second hole transport material.
  • This application also provides a method for manufacturing a quantum dot light-emitting diode device, which includes the following steps:
  • a substrate is provided on which a cathode, a light-emitting layer, a hole transport layer and an anode are formed in stacks, the material of the hole transport layer is a second hole transport material, wherein the step of forming the light-emitting layer includes :
  • the application further provides a display panel including the quantum dot light emitting diode device.
  • the present application further provides a display panel including the quantum dot light-emitting diode device obtained by the above-mentioned manufacturing method.
  • the quantum dot light-emitting diode device and the preparation method thereof provided in the present application adopt a mixed material of quantum dots and a first hole transport material that can be crosslinked by heating to prepare a light emitting layer, and crosslink the first hole transport material by heating to form a three-dimensional network
  • the structure of the cross-linked polymer, quantum dots are embedded in the network structure of the cross-linked polymer, such a topographic structure makes the light-emitting layer have strong solvent resistance, and reduces the damage of the upper solvent to the quantum dots in the light-emitting layer.
  • the use of two layers of hole transport materials is more conducive to hole transport, and the device carrier injection is better balanced, thereby improving the efficiency and life of the device.
  • the preparation method of the quantum dot light-emitting diode device provided by the present application has low preparation cost and is suitable for large-area preparation.
  • the prepared inverted structure quantum dot light emitting diode device has the characteristics of more balanced carrier injection, high luminous efficiency, stable performance and long service life.
  • FIG. 1 is a schematic structural diagram of a quantum dot light emitting diode device with an inverted structure according to an embodiment of the application;
  • FIG. 2 is a schematic diagram of the light-emitting layer structure of a quantum dot light-emitting diode device of the present application
  • FIG. 3 is a schematic diagram of a structure of a quantum dot light-emitting diode device with an upright structure according to an embodiment of the application;
  • Example 4 is a PL test diagram of the light-emitting layer in Example 1 of the application.
  • Figure 5 is a PL test diagram of the light-emitting layer of Comparative Example 1 of the application.
  • Fig. 6 is an I-V curve test diagram of the 1QLED device of Example 1 of the application and the 1QLED device of Comparative Example.
  • the embodiment of the application provides a method for manufacturing a quantum dot light-emitting diode device, including:
  • a substrate is provided on which a cathode, a light-emitting layer, a hole transport layer and an anode are formed in stacks, the material of the hole transport layer is a second hole transport material, wherein the step of forming the light-emitting layer includes :
  • the method for preparing a quantum dot light-emitting diode device uses a mixed material of quantum dots and a first hole transport material that can be cross-linked by heating to prepare a light-emitting layer, and the first hole transport material is cross-linked by heating to form a three-dimensional In the cross-linked polymer of the network structure, the quantum dots are embedded in the network structure of the cross-linked polymer.
  • a topographic structure makes the light-emitting layer highly resistant to solvents and reduces the damage of the upper solvent to the quantum dots in the light-emitting layer.
  • the use of two layers of hole transport materials is more conducive to hole transport, and the device carrier injection is better balanced, thereby improving the efficiency and life of the device.
  • the preparation method of the quantum dot light-emitting diode device provided by the present application has low preparation cost and is suitable for large-area preparation. It is understandable that based on the understanding that quantum dots are embedded in the network structure of the cross-linked polymer, such a topographic structure makes the light-emitting layer have strong solvent resistance, the first hole transport material is cross-linked to form a three-dimensional network structure.
  • the structure formed by the mixture of cross-linked polymer and quantum dots can also achieve similar effects, in which embedding is a kind of hybrid.
  • the method for preparing the quantum dot light-emitting diode device described above can be applied to a quantum dot light-emitting diode device with an upright structure as well as a quantum dot light-emitting diode device with an inverted structure.
  • the inverted structure quantum dot light emitting diode device prepared by the method for preparing the quantum dot light emitting diode device has more advantages.
  • the inverted structure quantum dot light-emitting diode device can be directly integrated with the n-type TFT, thereby reducing the driving voltage and improving the stability of the device.
  • step S1 is to deposit a mixed material including a first hole transport material and quantum dots on the cathode.
  • a cathode, a light-emitting layer, a hole transport layer, and an anode may be formed on the substrate, which are sequentially stacked.
  • the valence band energy level of the first hole transport material is between the quantum dot valence band energy level and the valence band energy level of the second hole transport material.
  • the valence band step barriers of the first hole transport material and the second hole transport material are used to improve the injection of holes, so that the carriers of the light-emitting layer are more balanced, and the luminous efficiency is improved.
  • the first hole transport material has a conjugated structure with triphenylamine or a triphenylamine derivative as the main group and at least two heat-crosslinkable end groups, the heat-crosslinkable
  • the terminal group is a vinyl group or -O-Si(OCH 2 CH 3 ) 3 group.
  • the triphenylamine derivative includes any one of the following groups:
  • R is an alkyl group having less than 6 carbon atoms.
  • the first hole transport material is selected from any one of the following compounds numbered 01 to 07:
  • R is an alkyl group with less than 6 carbon atoms, and 1 ⁇ n ⁇ 3.
  • step S1 the mass percentage of the first hole transport material in the mixed material is 5%-50%.
  • the mixed material also includes a solvent, and the solvent is a conventional solvent well known to those skilled in the art, for example, the solvent is toluene or chlorobenzene.
  • the heating temperature may be 100° C. to 160° C., and the heating time may be 20 min to 40 min.
  • the first hole transport material is cross-linked by heating to form a polymer (taking compound CBP-H, compound 07 as an example):
  • the light-emitting layer is composed of a cross-linked polymer formed by heating and quantum dots embedded in the cross-linked polymer.
  • the quantum dots can be one or more of red, green, and blue quantum dots.
  • One of II-VI compounds, III-V compounds, IIV compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds or IV elements kind or more.
  • the quantum dots include but are not limited to II-VI semiconductor nanocrystals, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary and ternary crystals.
  • II-VI semiconductor nanocrystals such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary and ternary crystals.
  • III-V semiconductor nanocrystals such as GaP, GaAs, InP, InAs and other binary, ternary, and quaternary III-V compounds; used for electroluminescence
  • III-V semiconductor nanocrystals such as GaP, GaAs, InP, InAs and other binary, ternary, and quaternary III-V compounds; used for electroluminescence
  • the semiconductor materials of are not limited to II-V group compounds, III-VI group compounds, IV-VI group compounds, I-III-VI group compounds, II-IV-VI group compounds, and group IV simple substances.
  • the material of the hole transport layer can be selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), 4 ,4'-bis(9-carbazole)biphenyl (CBP), polyvinylcarbazole (PVK), 4,4',4”-tris(carbazol-9-yl)triphenylamine (TCTA)kind or more.
  • TFB poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine)
  • CBP 4 ,4'-bis(9-carbazole)biphenyl
  • PVK polyvinylcarbazole
  • TCTA 4,4',4”-tris(carbazol-9-yl)triphenylamine
  • the solvent for dissolving the second hole transport material is also a conventional solvent well known to those skilled in the art, such as chlorobenzene or chloroform.
  • the cathode material may be selected from Ag or Al.
  • the anode material may be selected from one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), and aluminum-doped zinc oxide (AZO).
  • ITO indium-doped tin oxide
  • FTO fluorine-doped tin oxide
  • ATO antimony-doped tin oxide
  • AZO aluminum-doped zinc oxide
  • an electron transport layer may be formed between the cathode and the light emitting layer.
  • an electron injection layer may be formed between the cathode and the light emitting layer.
  • a hole blocking layer may be formed between the cathode and the light emitting layer.
  • a hole injection layer and/or an electron blocking layer may also be formed between the hole transport layer and the anode.
  • an electron transport layer may also be provided between the cathode and the light-emitting layer.
  • the material of the electron transport layer can be selected from n-type ZnO, TiO 2 , SnO, Ta 2 O 3 , AlZnO, ZnSnO, InSnO, Alq 3 , Ca, Ba, CsF, LiFCsCO 3 or their doped based on metal elements
  • One or more of semiconductor materials for example, ZnO or Mg-doped ZnO.
  • the solvent for dissolving the electron transport layer material is a conventional solvent well known to those skilled in the art, such as ethanol or isopropanol.
  • a hole injection layer is further provided between the hole transport layer and the anode.
  • the hole injection layer material can be selected from poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS), polyaniline (PANI), polymaleic anhydride (PMAH), copper phthalocyanine (CuPc), 4,4',4”-tris[2-naphthylphenylamino]triphenyl (2-TNATA), non-doped transition metal oxide, doped transition metal oxide, metal sulfide, doped One or more of heterometal sulfides.
  • PEDOT:PSS poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid
  • PANI polyaniline
  • PMAH polymaleic anhydride
  • CuPc copper phthalocyanine
  • 4-TNATA 4,4',4”-tris[2-naphthylphenylamino]triphenyl
  • non-doped transition metal oxide doped transition metal oxide
  • the solvent for dissolving the hole injection layer material is a conventional solvent well known to those skilled in the art, for example, isopropanol.
  • the method for forming each layer may be a chemical method or a physical method.
  • the chemical method includes but is not limited to chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, and electrolytic deposition.
  • methods and co-precipitation methods; physical methods include, but are not limited to, spin coating, printing, blade coating, dipping and pulling, soaking, spraying, roller coating, casting, and slit Type coating method, strip coating method, thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method One or more.
  • the method of forming the electron transport layer is a spin coating method.
  • a heating method may be used, and the heating temperature may be 80°C to 150°C.
  • the method for forming the hole injection layer is a spin coating method.
  • a heating method may be used, and the heating temperature may be 80°C to 120°C.
  • step S1 is to deposit a mixed material including a first hole transport material and quantum dots on the hole transport layer.
  • An anode, a hole transport layer, a light-emitting layer, and a cathode may be sequentially stacked on the substrate.
  • one or more of an electron transport layer, an electron injection layer and a hole blocking layer may be formed between the cathode and the light emitting layer.
  • a hole injection layer and/or an electron blocking layer may also be formed between the hole transport layer and the anode.
  • the preparation method of each layer is the same as that of the above-mentioned preparation of the inverted structure quantum dot light-emitting diode device, and will not be repeated here.
  • the embodiments of the present application also provide a quantum dot light-emitting diode device, including:
  • a light-emitting layer is disposed between the cathode and the anode, and the material of the light-emitting layer includes a cross-linked polymer formed of a first hole transport material and quantum dots embedded in the cross-linked polymer ;
  • a hole transport layer is disposed between the light-emitting layer and the anode, and the material of the hole transport layer is a second hole transport material.
  • an electron transport layer may be provided between the cathode and the light-emitting layer.
  • an electron injection layer may be provided between the cathode and the light-emitting layer.
  • a hole blocking layer may be provided between the cathode and the light-emitting layer.
  • a hole injection layer and/or an electron blocking layer may also be provided between the hole transport layer and the anode.
  • the mass percentage of the cross-linked polymer in the material of the light-emitting layer may be 3%-50%.
  • the thickness of the light-emitting layer is 20 nm-50 nm.
  • the hole transport layer has a thickness of 15 nm to 50 nm.
  • an electron transport layer may be further provided between the cathode and the light-emitting layer, and the electron transport layer has a thickness of 30 nm to 150 nm.
  • a hole injection layer may be further provided between the hole transport layer and the anode, and the hole injection layer has a thickness of 5 nm to 10 nm.
  • the quantum dot light emitting diode device has an inverted structure, which includes a substrate 110, a cathode 120, an electron transport layer 130, a light emitting layer 140, a hole transport layer 150, The hole injection layer 160, the anode 170, and the capping layer 180.
  • the light-emitting layer 140 is composed of a three-dimensional network of cross-linked polymer 141 and quantum dots 142 embedded in the cross-linked polymer.
  • the present application also provides an upright structure quantum dot light emitting diode device, which includes: a substrate 110, an anode 170, a hole injection layer 160, a hole transport layer 150, a light emitting layer 140, an electron transport The layer 130, the cathode 120, and the capping layer 180.
  • the light-emitting layer 140 is composed of a three-dimensional network of cross-linked polymer 141 and quantum dots 142 embedded in the cross-linked polymer.
  • the quantum dot light-emitting diode device prepared by the application has the characteristics of more balanced carrier injection, high luminous efficiency, stable performance, and long service life.
  • the first electrode material is ITO
  • the glass substrate deposited with ITO is placed in detergent, deionized water, acetone, ethanol, and deionized water for 15 minutes each time, and then 100°C Dry, and finally UV light for 15 minutes.
  • a 50nm MgZnO film was obtained by spin coating on the ITO, annealed at 100°C for 10 minutes, and the doping ratio of Mg was 5%.
  • TFB Spin-coating TFB on the light-emitting layer as a hole transport layer, with a concentration of 10 mg/mL, a solvent of chlorobenzene, and annealing at 120°C for 20 minutes;
  • 100nm Al is deposited on PMAH by vapor deposition method.
  • Compound 01 was used to replace CBP-H to prepare QLED devices, and other conditions were the same as the preparation method of Example 1.
  • Compound 02 was used to replace CBP-H to prepare QLED devices, and other conditions were the same as the preparation method of Example 1.
  • Compound 03 was used to replace CBP-H to prepare QLED devices, and other conditions were the same as the preparation method of Example 1.
  • Compound 04 was used to replace CBP-H to prepare QLED devices, and other conditions were the same as the preparation method of Example 1.
  • Compound 05 was used to replace CBP-H to prepare QLED devices, and other conditions were the same as the preparation method of Example 1.
  • Compound 06 was used to replace CBP-H to prepare QLED devices, and other conditions were the same as the preparation method of Example 1.
  • the preparation method is basically the same as that of Example 1, except that in step 3, only quantum dots are spin-coated on the MgZnO film.
  • Example 1 In the preparation process of Example 1, take the two substrates that proceeded to step 2, one as a control sample and the other as a test sample, and the influence of MgZnO, ITO, and glass was eliminated by scanning the baseline of the light intensity.
  • the test sample continues to be prepared, and proceeds to step 3, and the first PL test is performed after annealing at 140°C for 30 minutes.
  • the result is shown in Figure 4.
  • the curve before spin-coating is the result of the first PL test and the curve after spin-coating It is the result of the second PL test.
  • the two substrates that proceeded to step 2 were also taken to scan baselines, one was reserved as a control sample, and the other was used as a test sample to exclude the influence of MgZnO, ITO, and glass.
  • the test sample continues to be prepared, and proceeds to step 3, and the first PL test is performed after annealing at 140°C for 30 minutes.
  • the result is shown in Figure 5.
  • the curve before spin coating is the result of the first PL test and the curve after spin coating It is the result of the second PL test.
  • the light-emitting layer formed in Example 1 has better resistance to solvents; when the voltage is higher, the device starts to work normally, and the current of the B curve is larger than the A curve, indicating that the carrier injection increases, because The electron injection has not changed, and the increase of carriers is due to the increase in hole injection, which shows that the QLED device prepared by the present application has a better balance of carrier injection than the existing QLED device.
  • the QLED devices prepared in Examples 2-7 also achieved the same technical effects as in Example 1 in the PL test and IV test, indicating that the light-emitting layer of the OLED devices prepared in Examples 2-7 also has resistance to solvents.
  • the carrier injection of the QLED devices prepared in Examples 2-7 is also more balanced.

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Abstract

本申请涉及一种量子点发光二极管器件，包括：相对设置的阴极和阳极；发光层，所述发光层设置在所述阴极和所述阳极之间，所述发光层的材料包括第一空穴传输材料形成的交联聚合物以及嵌入所述交联聚合物中的量子点；空穴传输层，所述空穴传输层设置在所述发光层和所述阳极之间，所述空穴传输层的材料为第二空穴传输材料。本申请还涉及一种量子点发光二极管器件的制备方法以及一种显示面板。

Description

量子点发光二极管器件及其制备方法和显示面板
相关申请
本申请要求于2020年6月15日提交中国专利局、申请号为202010543924.1、申请名称为“量子点发光二极管器件及其制备方法和显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及量子点技术领域，特别是涉及一种量子点发光二极管器件及其制备方法和显示面板。
背景技术
量子点(Quantum Dots)是一种半径小于或接近激子玻尔半径的纳米晶体，其粒径通常介于1～20nm之间。应用在显示领域的量子点一般都是核壳结构，内部的空穴与电子在各个方向上的运动受到限制，且表面一般由配体钝化。由于量子点发光波长可通过控制粒径尺寸进行调节，发光光谱线宽窄，色纯度高，电子迁移性高，光稳定性好，可用于柔性显示等优点，在发光显示领域得到广泛应用。
以量子点为发光材料的发光二极管被称为量子点发光二极管(Quantum dot light-emitting diode,QLED)器件。从1994年，第一个量子点发光二极管(QLED)制备出来，经过20多年的发展，无论是从材料的合成，器件的制备，还是发光的机理都取得了很大的进步。其中在器件结构方面，倒置器件结构由于众多优势受到了大家广泛的关注。倒置器件结构其中一个最大的优势是可以和n型TFT直接集成，从而减小驱动电压，提高器件稳定性。但目前，大部分倒置器件结构中空穴传输层都采用蒸镀的方法，这是由于传统溶液法溶解空穴传输层的溶剂对量子点层基本都有不同程度的破坏。但是蒸镀法成 本相对较高，且不适合大面积制备。
发明内容
本申请的各示例性实施例提供一种新型量子点发光二极管器件及其制备方法和显示面板，可采用全溶液法进行制备但不会破坏量子点层，制备成本低，且适于大面积制备。
本申请提供一种量子点发光二极管器件，包括：
相对设置的阴极和阳极；
发光层，所述发光层设置在所述阴极和所述阳极之间，所述发光层的材料包括第一空穴传输材料形成的交联聚合物以及嵌入所述交联聚合物中的量子点；以及
空穴传输层，所述空穴传输层设置在所述发光层和所述阳极之间，所述空穴传输层的材料为第二空穴传输材料。
本申请还提供一种量子点发光二极管器件的制备方法，包括以下步骤：
提供基板，在所述基板上形成层叠设置的阴极、发光层、空穴传输层与阳极，所述空穴传输层的材料为第二空穴传输材料，其中，形成所述发光层的步骤包括：
在所述阴极上或者所述空穴传输层上沉积包括第一空穴传输材料和量子点的混合材料，所述第一空穴传输材料包括交联官能团；
加热所述混合材料，使所述第一空穴传输材料形成交联聚合物，得到所述发光层。
本申请进一步提供一种显示面板，包括所述的量子点发光二极管器件。
本申请进一步提供一种显示面板，包括由上述制备方法得到的量子点发光二极管器件。
本申请提供的量子点发光二极管器件及其制备方法，采用量子点和加热可交联的第一空穴传输材料的混合材料制备发光层，通过加热使第一空穴传输材料交联形成三维网络结构的交联聚合物，量子点嵌入在交联聚合物的网 络结构中，这样的形貌结构使得发光层具有很强的抗溶剂性，减少了上层溶剂对发光层中量子点的破坏。采用两层空穴传输材料，更有利于空穴的传输，器件载流子注入更佳平衡，从而可提高器件效率和寿命。本申请提供的量子点发光二极管器件的制备方法，制备成本低，且适于大面积制备。制备的倒置结构量子点发光二极管器件具有载流子注入更平衡、发光效率高、性能稳定，使用寿命长的特性。
附图说明
图1为本申请一实施例倒置结构量子点发光二极管器件的结构示意图；
图2为本申请量子点发光二极管器件发光层结构示意图；
图3为本申请一实施例正置结构量子点发光二极管器件的结构示意图；
图4为本申请实施例1发光层的PL测试图；
图5为本申请对比例1发光层的PL测试图；
图6为本申请实施例1QLED器件和对比例1QLED器件的I-V曲线测试图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的示例性实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。
除了在操作实施例中所示以外或另外表明之外，所有在说明书和权利要 求中表示成分的量、反应条件等所使用的数字理解为在所有情况下通过术语“约”来调整。除非有相反的说明，否则说明书和所附权利要求书中列出的数值参数均是近似值，本领域的技术人员能够利用本文所公开的教导内容寻求获得的所需特性，适当改变这些近似值。用端点表示的数值范围的使用包括该范围内的所有数字以及该范围内的任何范围，例如，1至6包括1、2、3、4、5、6等。
本申请实施例提供一种量子点发光二极管器件的制备方法，包括：
提供基板，在所述基板上形成层叠设置的阴极、发光层、空穴传输层与阳极，所述空穴传输层的材料为第二空穴传输材料，其中，形成所述发光层的步骤包括：
S1，在所述阴极上或者所述空穴传输层上沉积包括第一空穴传输材料和量子点的混合材料，所述第一空穴传输材料包括交联官能团；
S2，加热所述混合材料，使所述第一空穴传输材料形成交联聚合物，得到所述发光层。
本申请实施例提供的量子点发光二极管器件的制备方法，采用量子点和加热可交联的第一空穴传输材料的混合材料制备发光层，通过加热使第一空穴传输材料交联形成三维网络结构的交联聚合物，量子点嵌入在交联聚合物的网络结构中，这样的形貌结构使得发光层具有很强的抗溶剂性，减少了上层溶剂对发光层中量子点的破坏。采用两层空穴传输材料，更有利于空穴的传输，器件载流子注入更佳平衡，从而可提高器件效率和寿命。采用本申请提供的量子点发光二极管器件的制备方法，制备成本低，且适于大面积制备。可以理解的是，基于量子点嵌入在交联聚合物的网络结构中，这样的形貌结构使得发光层具有很强的抗溶剂性的理解，第一空穴传输材料交联形成三维网络结构的交联聚合物与量子点混合形成的结构，也能取得类似效果，其中嵌入属于混合中的一种。
上述量子点发光二极管器件的制备方法可以适用于正置结构量子点发光二极管器件也可以适用于倒置结构量子点发光二极管器件。在另一个实施例 中，该量子点发光二极管器件的制备方法制备的倒置结构量子点发光二极管器件更具优势。倒置结构量子点发光二极管器件可以和n型TFT直接集成，从而减小驱动电压，提高器件稳定性。
在本申请中，当制备倒置结构量子点发光二极管器件时，步骤S1为，在所述阴极上沉积包括第一空穴传输材料和量子点的混合材料。所述基板上可以形成依次层叠设置的阴极、发光层、空穴传输层和阳极。
所述第一空穴传输材料价带能级介于所述量子点价带能级和第二空穴传输材料价带能级之间。利用第一空穴传输材料和第二空穴传输材料的价带阶梯势垒提高空穴的注入，从而使得发光层载流子更平衡，进而发光效率得到提高。
在一些实施例中，所述第一空穴传输材料具有以三苯胺或三苯胺衍生物为主要基团的共轭结构和至少两个加热可交联的端基，所述加热可交联的端基为乙烯基团或-O-Si(OCH 2CH 3) 3基团。
在一些实施例中，所述三苯基胺衍生物包括以下基团中的任意一种：
Figure PCTCN2021084808-appb-000001
其中，R为碳原子数小于6的烷基基团。
在一些具体实施例中，所述第一空穴传输材料选自以下编号为01～07化合物中的任意一种：
Figure PCTCN2021084808-appb-000002
Figure PCTCN2021084808-appb-000003
其中，R为碳原子数小于6的烷基基团，1≤n≤3。
步骤S1中，所述第一空穴传输材料占所述混合材料的质量百分比为5％～50％。
所述混合材料还包括溶剂，所述溶剂为本领域技术人员熟知的常规溶剂，例如所述溶剂为甲苯或氯苯。
步骤S2中，加热温度可以为100℃～160℃，加热时间可以为20min～40min。
如下式(1-1)所示，第一空穴传输材料通过加热交联形成聚合物(以化合物CBP-H即化合物07为例)：
Figure PCTCN2021084808-appb-000004
所述发光层是由加热形成的交联聚合物以及嵌入所述交联聚合物中的量子点组成的。
所述量子点可以为红、绿、蓝色量子点中的一种或多种。II-VI族化合物、III-V族化合物、IIV族化合物、III-VI族化合物、IV-VI族化合物、I-III-VI族 化合物、II-IV-VI族化合物或IV族单质中的一种或多种。
具体地，所述量子点包括但不限于II-VI半导体的纳米晶，比如CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、PbS、PbSe、PbTe和其他二元、三元、四元的II-VI化合物；III-V族半导体的纳米晶，比如GaP、GaAs、InP、InAs和其他二元、三元、四元的III-V化合物；所述的用于电致发光的半导体材料还不限于II-V族化合物、III-VI族化合物、IV-VI族化合物、I-III-VI族化合物、II-IV-VI族化合物、IV族单质等。
所述空穴传输层的材料也就是第二空穴传输材料可以选自聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)(TFB)、4,4'-二(9-咔唑)联苯(CBP)、聚乙烯咔唑(PVK)、4,4’,4”-三(咔唑-9-基)三苯胺(TCTA)中的一种或多种。
溶解所述第二空穴传输材料的溶剂同样为本领域技术人员熟知的常规溶剂，例如氯苯或三氯甲烷。
所述阴极材料可以选自Ag或Al。
所述阳极材料可以选自铟掺杂氧化锡(ITO)、氟掺杂氧化锡(FTO)、锑掺杂氧化锡(ATO)、铝掺杂氧化锌(AZO)中的一种或多种。
进一步，所述阴极和所述发光层之间还可以形成有电子传输层、电子注入层和空穴阻挡层中的一种或多种。
所述空穴传输层和所述阳极之间还可以形成有空穴注入层和/或电子阻挡层。
在一些实施例中，所述阴极和所述发光层之间还可以设置有电子传输层。
所述电子传输层的材料可以选自n型ZnO、TiO 2、SnO、Ta 2O 3、AlZnO、ZnSnO、InSnO、Alq 3、Ca、Ba、CsF、LiFCsCO 3或它们的基于金属元素掺杂的半导体材料中的一种或多种，例如，ZnO或Mg掺杂的ZnO。
溶解所述电子传输层材料的溶剂为本领域技术人员熟知的常规溶剂，例如乙醇或异丙醇。
在一些实施例中，所述空穴传输层和所述阳极之间还设有空穴注入层。
所述空穴注入层材料可以选自聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸 (PEDOT:PSS)、聚苯胺(PANI)、聚马来酸酐(PMAH)、酞菁铜(CuPc)、4,4',4”-三[2-萘基苯基氨基]三苯(2-TNATA)、非掺杂过渡金属氧化物、掺杂过渡金属氧化物、金属硫化物、掺杂金属硫化物中的一种或多种。
溶解所述空穴注入层材料的溶剂为本领域技术人员熟知的常规溶剂，例如为异丙醇。
更进一步地，在本申请中，形成所述各层的方法可以是化学法或物理法，其中化学法包括但不限于化学气相沉积法、连续离子层吸附与反应法、阳极氧化法、电解沉积法、共沉淀法中的一种或多种；物理法包括但不限于旋涂法、印刷法、刮涂法、浸渍提拉法、浸泡法、喷涂法、滚涂法、浇铸法、狭缝式涂布法、条状涂布法、热蒸发镀膜法、电子束蒸发镀膜法、磁控溅射法、多弧离子镀膜法、物理气相沉积法、原子层沉积法、脉冲激光沉积法中的一种或多种。
在一些实施例中，所述电子传输层形成的方法为旋涂法，为了加快固化，可采用加热的方法，加热温度可以为80℃～150℃。
在一些实施例中，所述空穴注入层形成的方法为旋涂法，为了加快固化，可采用加热的方法，加热温度可以为80℃～120℃。
当制备正置结构量子点发光二极管器件时，步骤S1为，在所述空穴传输层上沉积包括第一空穴传输材料和量子点的混合材料。所述基板上可以形成依次层叠设置的阳极、空穴传输层、发光层和阴极。同样的，所述阴极和所述发光层之间还可以形成有电子传输层、电子注入层和空穴阻挡层中的一种或多种。所述空穴传输层和所述阳极之间还可以形成有空穴注入层和/或电子阻挡层。所述各层的制备方法均与上述制备倒置结构量子点发光二极管器件时相同，在此不再赘述。
本申请实施例还提供一种量子点发光二极管器件，包括：
相对设置的阴极和阳极；
发光层，所述发光层设置在所述阴极和所述阳极之间，所述发光层的材料包括第一空穴传输材料形成的交联聚合物以及嵌入所述交联聚合物中的量 子点；
空穴传输层，所述空穴传输层设置在所述发光层和所述阳极之间，所述空穴传输层的材料为第二空穴传输材料。
进一步的，所述阴极和所述发光层之间还可以设置有电子传输层、电子注入层和空穴阻挡层中的一种或多种。
所述空穴传输层和所述阳极之间还可以设置有空穴注入层和/或电子阻挡层。
所述交联聚合物占所述发光层的材料的质量百分比可以为3％～50％。
在一些实施例中，所述发光层厚度为20nm～50nm。
在一些实施例中，所述空穴传输层厚度为15nm～50nm。
在一些实施例中，所述阴极和所述发光层之间还可以设置有电子传输层，所述电子传输层厚度为30nm～150nm。
在一些实施例中，所述空穴传输层和所述阳极之间还可以设置有空穴注入层，所述空穴注入层厚度为5nm～10nm。
请参阅图1，在一实施例中，所述量子点发光二极管器件为倒置结构，其包括依次层叠设置的：基板110、阴极120、电子传输层130、发光层140、空穴传输层150、空穴注入层160、阳极170、封盖层180。请参阅图2，其中，发光层140由三维网络状的交联聚合物141和嵌入所述交联聚合物中的量子点142组成。
请参阅图3，进一步地，本申请还提供一种正置结构量子点发光二极管器件，其包括：基板110、阳极170、空穴注入层160、空穴传输层150、发光层140、电子传输层130、阴极120、封盖层180。请参阅图2，其中，发光层140由三维网络状的交联聚合物141和嵌入所述交联聚合物中的量子点142组成。
本申请制备的量子点发光二极管器件具有载流子注入更平衡、发光效率高、性能稳定，使用寿命长的特性。
以下为具体实施例：
实施例1
1.提供沉积有第一电极的基板：第一电极材料为ITO，将沉积有ITO的玻璃基板依次置于洗涤剂、去离子水、丙酮、乙醇、去离子水中每次超声15min，然后100℃烘干，最后紫外光照15min。
2.在第一电极上沉积第一功能层：在ITO上通过旋涂方式获得50nm的MgZnO薄膜，100℃退火10min，其中Mg的掺杂比例为5％。
3.在第一功能层上形成发光材料涂层：在MgZnO薄膜上旋涂量子点和CBP-H(化合物07)的混合溶液作为发光层，其中量子点的浓度为15mg/mL，CBP-H的浓度为2mg/mL，溶剂为甲苯，140℃退火30min。
4.在所述发光层上依次沉积空穴传输层、空穴注入层和第二电极，制成QLED器件：
在发光层上旋涂TFB作为空穴传输层，浓度为10mg/mL，溶剂为氯苯，120℃退火20min；
在TFB上旋涂PMAH作为空穴注入层，浓度为5mg/mL，溶剂为异丙醇，120℃退火10min；
在PMAH上通过蒸镀方法蒸镀100nm Al。
实施例2
采用化合物01替换CBP-H制备QLED器件，其他条件均与实施例1的制备方法相同。
实施例3
采用化合物02替换CBP-H制备QLED器件，其他条件均与实施例1的制备方法相同。
实施例4
采用化合物03替换CBP-H制备QLED器件，其他条件均与实施例1的制备方法相同。
实施例5
采用化合物04替换CBP-H制备QLED器件，其他条件均与实施例1的制备 方法相同。
实施例6
采用化合物05替换CBP-H制备QLED器件，其他条件均与实施例1的制备方法相同。
实施例7
采用化合物06替换CBP-H制备QLED器件，其他条件均与实施例1的制备方法相同。
对比例1
与实施例1制备方法基本相同，不同之处在于，步骤3中在MgZnO薄膜上仅旋涂量子点。
测试方法：
1、光致发光谱(PL)测试
在实施例1制备过程中，取进行到步骤2的两个基板，一片作为对照样，另一片作为测试样，同时测光强扫基线排除MgZnO、ITO、玻璃的影响。测试样继续制备，进行至步骤3，140℃退火30min后进行第一次PL测试。然后再在140℃退火30min后形成的发光层上旋涂氯苯，进行第二次PL测试，结果如图4所示，旋涂前的曲线为第一次PL测试结果，旋涂后的曲线为第二次PL测试结果。
在对比例1制备过程中，同样的取进行到步骤2的两个基板扫基线，保留一片作为对照样，另一片作为测试样，以排除MgZnO、ITO、玻璃的影响。测试样继续制备，进行至步骤3，140℃退火30min后进行第一次PL测试。然后再在140℃退火30min后形成的发光层上旋涂氯苯，进行第二次PL测试，结果如图5所示，旋涂前的曲线为第一次PL测试结果，旋涂后的曲线为第二次PL测试结果。
图4和图5对比结果显示，对比例1形成的发光层在旋涂氯苯后峰值大幅减小，说明溶剂对发光层破坏巨大。而实施例1中形成的发光层在旋涂氯苯后峰值变化无显著差异，说明CBP-H的加入提高了发光层对溶剂的抵抗性。
2、器件I-V曲线测试
分别采用实施例1和对比例1制备的QLED器件，进行I-V测试，如图6所示，图中A曲线表示对比例1制备的QLED器件的I-V曲线，B曲线表示实施例1制备的QLED器件的I-V曲线，从图6中可以看出，在电压较低时，B曲线的电流比A曲线低，漏电流小，漏电流越小则成膜越好，说明实施例1发光层成膜更好，由此可知实施例1形成的发光层对溶剂的抵抗性更好；当电压较高时，器件开始正常工作，此时B曲线的电流比A曲线大，说明载流子注入增加，由于电子注入没有变，载流子的增加是由于空穴注入得到提高，说明本申请制备的QLED器件相较于现有的QLED器件中载流子注入更佳平衡。
同样的，实施例2～7制备的QLED器件在PL测试和I-V测试中也取得了与实施例1相同的技术效果，说明实施例2～7制备的OLED器件的发光层也具有对溶剂的抵抗性，实施例2～7制备的QLED器件载流子注入也更佳平衡。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (19)

  1. 一种量子点发光二极管器件，包括：
    相对设置的阴极和阳极；
    发光层，所述发光层设置在所述阴极和所述阳极之间，所述发光层的材料包括第一空穴传输材料形成的交联聚合物以及与所述交联聚合物混合的量子点；以及
    空穴传输层，所述空穴传输层设置在所述发光层和所述阳极之间，所述空穴传输层的材料为第二空穴传输材料。
  2. 根据权利要求1所述的量子点发光二极管器件，其中，所述第一空穴传输材料价带能级介于所述量子点价带能级和所述第二空穴传输材料价带能级之间。
  3. 根据权利要求1所述的量子点发光二极管器件，其中，所述第一空穴传输材料具有以三苯胺或三苯胺衍生物为主要基团的共轭结构和至少两个加热可交联的端基。
  4. 根据权利要求3所述的量子点发光二极管器件，其中，所述加热可交联的端基为乙烯基团或-O-Si(OCH 2CH 3) 3基团。
  5. 根据权利要求3或4所述的量子点发光二极管器件，其中，所述三苯基胺衍生物包括以下基团中的任意一种：
    Figure PCTCN2021084808-appb-100001
    Figure PCTCN2021084808-appb-100002
    其中，R为碳原子数小于6的烷基基团。
  6. 根据权利要求1所述的量子点发光二极管器件，其中，所述第一空穴传输材料选自以下结构式中的任意一种：
    Figure PCTCN2021084808-appb-100003
    Figure PCTCN2021084808-appb-100004
    其中，R为碳原子数小于6的烷基基团，1≤n≤3。
  7. 根据权利要求1所述的量子点发光二极管器件，其中，所述交联聚合物占所述发光层材料的质量百分比为3％～50％。
  8. 根据权利要求1所述的量子点发光二极管器件，其中，所述量子点发光二极管器件为倒置结构量子点发光二极管器件。
  9. 根据权利要求8所述的量子点发光二极管器件，其中，所述阴极和所述发光层之间还设置有电子传输层，和/或，所述阳极和所述空穴传输层之间还设置有空穴注入层。
  10. 一种量子点发光二极管器件的制备方法，包括：
    提供基板，在所述基板上形成层叠设置的阴极、发光层、空穴传输层与阳极，所述空穴传输层的材料为第二空穴传输材料，其中，形成所述发光层的步骤包括：
    在所述阴极上或者所述空穴传输层上沉积包括第一空穴传输材料和量子点的混合材料，所述第一空穴传输材料包括交联官能团；
    加热所述混合材料，使所述第一空穴传输材料形成交联聚合物，得到所述发光层。
  11. 根据权利要求10所述的量子点发光二极管器件的制备方法，其中，在所述加热所述混合材料的步骤中，加热温度为100℃～160℃。
  12. 根据权利要求10所述的量子点发光二极管期间的制备方法，其中，在所述加热所述混合材料的步骤中，加热时间为20min～40min。
  13. 一种显示面板，包括量子点发光二极管器件，所述量子点发光二极管器件包括：相对设置的阴极和阳极；
    发光层，所述发光层设置在所述阴极和所述阳极之间，所述发光层的材料包括第一空穴传输材料形成的交联聚合物以及与所述交联聚合物混合的量子点；以及
    空穴传输层，所述空穴传输层设置在所述发光层和所述阳极之间，所述空穴传输层的材料为第二空穴传输材料。
  14. 根据权利要求13所述的显示面板，其中，所述量子点发光二极管器件的所述第一空穴传输材料价带能级介于所述量子点价带能级和所述第二空穴传输材料价带能级之间。
  15. 根据权利要求13所述的显示面板，其中，所述第一空穴传输材料具有以三苯胺或三苯胺衍生物为主要基团的共轭结构和至少两个加热可交联的端基。
  16. 根据权利要求15所述的显示面板，其中，所述加热可交联的端基为乙烯基团或-O-Si(OCH 2CH 3) 3基团。
  17. 根据权利要求13所述的显示面板，其中，所述交联聚合物占所述发光层材料的质量百分比为3％～50％。
  18. 根据权利要求13所述的显示面板，其中，所述量子点发光二极管器件为倒置结构量子点发光二极管器件。
  19. 根据权利要求18所述的显示面板，其中，所述阴极和所述发光层之间还设置有电子传输层，和/或，所述阳极和所述空穴传输层之间还设置有空穴注入层。
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