WO2021248918A1 - 一种基于凸点封装的抗蠕变易回收晶硅双面发电组件 - Google Patents

一种基于凸点封装的抗蠕变易回收晶硅双面发电组件 Download PDF

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WO2021248918A1
WO2021248918A1 PCT/CN2021/073512 CN2021073512W WO2021248918A1 WO 2021248918 A1 WO2021248918 A1 WO 2021248918A1 CN 2021073512 W CN2021073512 W CN 2021073512W WO 2021248918 A1 WO2021248918 A1 WO 2021248918A1
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adhesive film
layer
film
power generation
creep
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PCT/CN2021/073512
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English (en)
French (fr)
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庄浩
黄国平
孙观
严勋
姜亚帅
李菁楠
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中节能太阳能科技（镇江）有限公司
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Publication of WO2021248918A1 publication Critical patent/WO2021248918A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C69/00—Combinations of shaping techniques not provided for in a single one of main groups B29C39/00 - B29C67/00, e.g. associations of moulding and joining techniques; Apparatus therefore
    • B29C69/02—Combinations of shaping techniques not provided for in a single one of main groups B29C39/00 - B29C67/00, e.g. associations of moulding and joining techniques; Apparatus therefore of moulding techniques only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C71/00—After-treatment of articles without altering their shape; Apparatus therefor
    • B29C71/0009—After-treatment of articles without altering their shape; Apparatus therefor using liquids, e.g. solvents, swelling agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C71/00—After-treatment of articles without altering their shape; Apparatus therefor
    • B29C71/04—After-treatment of articles without altering their shape; Apparatus therefor by wave energy or particle radiation, e.g. for curing or vulcanising preformed articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2007/00—Flat articles, e.g. films or sheets
    • B29L2007/002—Panels; Plates; Sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the utility model relates to the technical field of photovoltaic power generation, and more specifically relates to a creep-resistant and easy-to-recover crystalline silicon double-sided power generation component based on bump packaging.
  • the structure of the photovoltaic module laminate is generally glass/adhesive film/cell/adhesive film/back sheet, and the adhesive film is generally EVA or POE.
  • the cross-linking agent in the film pyrolyzes to generate free radicals, causing high
  • the molecular chain undergoes a cross-linking reaction to form a three-dimensional spatial network structure to complete the encapsulation of the battery sheet.
  • the backplane is generally made of polymer material or glass, and the long-term stability of the components in outdoor power generation is ensured by the joint packaging of glass, adhesive film and backplane;
  • POE film is generally used in the industry for packaging to avoid potential induced degradation (PID) and ensure long-term reliability.
  • PID potential induced degradation
  • the inside of the film is completely cross-linked to form a three-dimensional space network.
  • the components have good creep resistance, after reaching the life cycle, the full three-dimensional network structure of the adhesive Membrane will bring great difficulties to the recycling of components.
  • the film loses its hot-melt processing performance.
  • the thermal treatment process needs to pass a high temperature treatment of about 500°C to dissociate.
  • the recycling process consumes high energy, and it is difficult to achieve high-purity recycling and environmental friendliness at the same time.
  • the purpose of the utility model is to solve the above shortcomings of the prior art, and proposes a double-sided power generation component with anti-creep and easy-to-recover crystalline silicon based on bump packaging.
  • the power generation component includes a glass front plate, a first encapsulating adhesive film layer, a crystalline silicon double-sided solar cell, a second encapsulating adhesive film layer and a glass/transparent back plate stacked in sequence from top to bottom.
  • the first encapsulating adhesive film The layers are the outer layer of the glue film, the middle layer of the glue film and the inner layer of the glue film from top to bottom, and the second encapsulation glue film layer is the inner layer of the glue film, the middle layer of the glue film and the outer layer of the glue film from top to bottom;
  • the inner and outer surfaces of the intermediate layer of the adhesive film are provided with bumps, and the outer layer of the adhesive film and the inner layer of the adhesive film are both provided with grooves that match the protrusions; between the protrusions and the grooves, the adhesive
  • the outer layer of the film and the inner layer of the adhesive film are micro-crosslinked through high temperature.
  • the height of the bumps is 50-250 ⁇ m.
  • the material for the intermediate layer of the adhesive film is any one of ethylene-butene copolymer or ethylene-octene copolymer.
  • the material of the outer layer of the adhesive film and the inner layer of the adhesive film is any one of ethylene-vinyl acetate copolymer, ethylene-butene copolymer or ethylene-octene copolymer.
  • a method for forming an encapsulation adhesive film layer for anti-creep and easy-to-recover crystalline silicon double-sided power generation components based on bump encapsulation includes the following steps:
  • the extruded intermediate layer is pre-crosslinked by electron irradiation to obtain a pre-crosslinked intermediate layer, the irradiation processing speed of the intermediate layer is 10-18m/min, and the irradiation electron beam intensity is 4-8mA;
  • the double-sided power generation component based on bump packaging in the utility model not only guarantees the excellent anti-PID attenuation performance of the back of the component, but also ensures the creep resistance of the component.
  • the bump encapsulation effectively guarantees the double-sided adhesive film and glass and crystalline silicon.
  • the cells form a heat-resistant and reliable bonding. Even if the components have hot spots and the temperature rises, the stability of the bonding structure can be ensured through the local three-dimensional network structure, and there will be no creep problems.
  • multiple layers of adhesive films with different structures are used to achieve a three-dimensional network in the adhesive film that penetrates the entire adhesive film without being distributed on the entire surface, which reduces the fluidity of the adhesive film.
  • the melting point is increased to meet the requirement of heating the components to above 150°C during recycling and separation, and the micro-crosslinked film between the glass/adhesive film, the film/cell, and the film/back plate can be heated again. Melting, at this time, only the cross-linked part is firmly adhered to other materials, and effective separation can be achieved by simple cutting at low temperature, making the process of recycling and separating component materials simple and easy, and greatly reducing processing energy consumption.
  • Figure 1 is a schematic diagram of the structure of an easy-to-recover double-sided power generation module
  • 1-glass front plate 2-first packaging adhesive film layer, 21-adhesive film outer layer, 211-grooves, 22-adhesive film middle layer, 221-bumps, 23-adhesive film inner layer, 3 -Crystal silicon double-sided solar cell, 4-Second packaging film layer, 5-Glass/transparent backplane.
  • a double-sided crystalline silicon power generation component with anti-creep and easy recovery based on bump packaging includes a glass front plate, a first packaging adhesive film layer, a crystalline silicon double-sided solar cell, and a second
  • the bottom is the inner layer of the glue film, the middle layer of the glue film and the outer layer of the glue film; the inner and outer sides of the middle layer of the glue film are provided with bumps, the outer layer of the glue film and the inner layer of the glue film are both provided with the bump Compatible grooves; between the protrusions and grooves, the outer layer of the adhesive film and the inner layer of the adhesive film are micro-crosslinked through high temperature.
  • the power generation component includes a glass front plate 1, a first packaging adhesive film layer 2, and a crystalline silicon double-sided solar cell 3 stacked in sequence from top to bottom.
  • the second encapsulation adhesive film layer 4 and the glass/transparent backplane 5, the first encapsulation adhesive film layer 2 from top to bottom is the adhesive film outer layer 21, the adhesive film middle layer 22, and the adhesive film inner layer 23, From top to bottom, the second encapsulation adhesive film layer 4 is an inner layer 23 of an adhesive film, an intermediate layer 22 of an adhesive film, and an outer layer 21 of an adhesive film; Both the outer layer 21 and the inner layer 23 of the adhesive film are provided with grooves 211 adapted to the bumps; between the protrusions 221 and the grooves 211, the outer layer 21 of the adhesive film and the inner layer 23 of the adhesive film pass High temperature forms micro-crosslinks.
  • the height of the bumps is 200 ⁇ m.
  • the material for the intermediate layer of the adhesive film is any one of ethylene-butene copolymer or ethylene-octene copolymer.
  • the material of the outer layer of the adhesive film and the inner layer of the adhesive film is any one of ethylene-vinyl acetate copolymer, ethylene-butene copolymer or ethylene-octene copolymer.
  • a method for forming an encapsulation adhesive film layer for anti-creep and easy-to-recover crystalline silicon double-sided power generation components based on bump encapsulation includes the following steps:
  • the extruded intermediate layer is pre-crosslinked by electron irradiation to obtain a pre-crosslinked intermediate layer, the irradiation processing speed of the intermediate layer is 10m/min, and the irradiation electron beam intensity is 6mA;

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一种基于凸点封装的抗蠕变易回收晶硅双面发电组件，发电组件包括自上而下依次层叠设置的玻璃前板、第一封装胶膜层、晶硅双面电池片、第二封装胶膜层和玻璃/透明背板，第一封装胶膜层从上而下依次为胶膜外层、胶膜中间层和胶膜内层，第二封装胶膜层从上而下依次为胶膜内层、胶膜中间层和胶膜外层；胶膜中间层内外两面均设有凸点，胶膜外层和胶膜内层均设有与凸点相适配的凹槽；凸起和凹槽之间经过高温形成微交联；本实用新型保证了组件的抗蠕变性能，凸点封装保证了胶膜与玻璃和电池片的耐热可靠性粘接，不会发生蠕变问题，同时凹槽的微交联结构使组件的回收分离过程变得简单易行。

Description

一种基于凸点封装的抗蠕变易回收晶硅双面发电组件 技术领域
本实用新型涉及光伏发电技术领域，更具体的是涉及一种基于凸点封装的抗蠕变易回收晶硅双面发电组件。
背景技术
光伏组件层压件结构一般为玻璃/胶膜/电池片/胶膜/背板，胶膜一般为EVA或POE，通过真空热压，胶膜中的交联剂热解产生自由基，引发高分子链发生交联反应，形成三维空间网络结构，完成对电池片的封装。背板一般为高分子材料或玻璃，通过玻璃、胶膜和背板的联合封装保证了组件在户外发电的长期稳定性；
现有的具有双面发电功能的晶硅组件，由于PERC电池片背面的抗PID性能不及正面，因此业内普遍采用POE胶膜进行封装，以避免发生电势诱导衰减(PID)，保证长期可靠性。但是，由于使用常规通用材料和封装方法进行制作，在胶膜内部完全交联形成三维空间网络，组件虽有较好的抗蠕变性能，但到达生命周期后，这种全三维网络结构的胶膜将给组件回收处理带来极大困难。经过交联后的胶膜，失去再次热熔加工性能，热法处理过程需通过500℃左右的高温处理才能解离，回收处理耗能高，难以同时实现高纯度回收与环境友好性。
实用新型内容
本实用新型目的是为了解决以上现有技术的不足，提出了一种基于凸点封装的抗蠕变易回收晶硅双面发电组件。
发电组件包括自上而下依次层叠设置的玻璃前板、第一封装胶膜层、晶硅双面电池片、第二封装胶膜层和玻璃/透明背板，所述的第一封装胶膜层从上而下依次为胶膜外层、胶膜中间层和胶膜内层，第二封装胶膜层从上而下依次 为胶膜内层、胶膜中间层和胶膜外层；所述的胶膜中间层内外两面均设有凸点，胶膜外层和胶膜内层均设有与所述凸点相适配的凹槽；所述的凸起和凹槽之间、胶膜外层和胶膜内层通过高温形成微交联。
优选地，所述的凸点高度为50-250μm。
优选地，所述的胶膜中间层材料为乙烯-丁烯共聚物或乙烯-辛烯共聚物中的任意一种。
优选地，所述的胶膜外层和胶膜内层材料为乙烯-醋酸乙烯酯共聚物、乙烯-丁烯共聚物或乙烯-辛烯共聚物中的任意一种。
一种基于凸点封装的抗蠕变易回收晶硅双面发电组件用封装胶膜层的成型方法，包括如下步骤：
(1)将胶膜中间层材料熔融挤出成片状中间层，将所述片状基质层通过设有若干个凹陷的辊轮，并经所述的辊轮对所述的片状中间层进行挤压，得到具有凸点结构的挤压中间层；
(2)将所述挤压中间层通过电子辐照预交联处理后得到预交联中间层，中间层的辐照加工速度10-18m/min，辐照电子束流强度为4-8mA；
(3)将胶膜外层和胶膜内层材料分别涂布于预交联中间层的两侧，分别形成胶膜外层和胶膜内层，成型过程中与中间层形成微交联，得到封装胶膜层，其中成型温度120-160℃，时间10-100s。真空热压使胶膜中间层内产生化学交联，形成三维空间网络凸点封装；胶膜外层、胶膜内层、胶膜外层与胶膜中间层之间、胶膜内层与胶膜中间层之间进一步发生微交联反应，降低其流动性。
有益效果：
本实用新型中基于凸点封装的双面发电组件既保证了组件背面优异的抗PID衰减性能，又保证了组件的抗蠕变性能，凸点封装有效保证了胶膜与玻璃 和晶硅双面电池片形成耐热可靠粘接，即便组件发生热斑，温度升高，也能通过局部三维网络结构保证粘接结构的稳定性，不会发生蠕变问题。另外，凸点封装的双面发电组件进行回收时，利用多层不同结构的胶膜，在胶膜中实现三维网络贯穿整个胶膜而不会分布于整个表面，降低了胶膜的流动性，提升了熔点，又使其满足回收分离时只需要将组件加热至150℃以上，玻璃/胶膜、胶膜/电池片、胶膜/背板之间微交联部分的胶膜就能受热再次熔融，此时仅有交联部分与其它材料牢固粘连，通过低温简易切割即能实现有效分离，使组件材料回收分离过程变得简单易行，大幅度降低了处理能耗。
附图说明
图1为易回收双面发电组件结构示意图；
图中，1-玻璃前板、2-第一封装胶膜层、21-胶膜外层、211-凹槽、22-胶膜中间层、221-凸点、23-胶膜内层、3-晶硅双面电池片、4-第二封装胶膜层、5-玻璃/透明背板。
具体实施方式
为了加深对本实用新型的理解，下面将结合实施例对本实用新型作进一步详述，该实施例仅用于解释本实用新型，并不构成对本实用新型保护范围的限定。
一种基于凸点封装的抗蠕变易回收晶硅双面发电组件，发电组件包括自上而下依次层叠设置的玻璃前板、第一封装胶膜层、晶硅双面电池片、第二封装胶膜层和玻璃/透明背板，所述的第一封装胶膜层从上而下依次为胶膜外层、胶膜中间层和胶膜内层，第二封装胶膜层从上而下依次为胶膜内层、胶膜中间层和胶膜外层；所述的胶膜中间层内外两面均设有凸点，胶膜外层和胶膜内层均设有与所述凸点相适配的凹槽；所述的凸起和凹槽之间、胶膜外层和胶膜内层通过高温形成微交联。
一种基于凸点封装的抗蠕变易回收晶硅双面发电组件，发电组件包括自上而下依次层叠设置的玻璃前板1、第一封装胶膜层2、晶硅双面电池片3、第二封装胶膜层4和玻璃/透明背板5，所述的第一封装胶膜层2从上而下依次为胶膜外层21、胶膜中间层22和胶膜内层23，第二封装胶膜层4从上而下依次为胶膜内层23、胶膜中间层22和胶膜外层21；所述的胶膜中间层22内外两面均设有凸点221，胶膜外层21和胶膜内层23均设有与所述凸点相适配的凹槽211；所述的凸起221和凹槽211之间、胶膜外层21和胶膜内层23通过高温形成微交联。
在上述技术方案中，所述的凸点高度为200μm。
在上述技术方案中，所述的胶膜中间层材料为乙烯-丁烯共聚物或乙烯-辛烯共聚物中的任意一种。
在上述技术方案中，所述的胶膜外层和胶膜内层材料为乙烯-醋酸乙烯酯共聚物、乙烯-丁烯共聚物或乙烯-辛烯共聚物中的任意一种。
一种基于凸点封装的抗蠕变易回收晶硅双面发电组件用封装胶膜层的成型方法，包括如下步骤：
(1)将胶膜中间层材料熔融挤出成片状中间层，将所述片状基质层通过设有若干个凹陷的辊轮，并经所述的辊轮对所述的片状中间层进行挤压，得到具有凸点结构的挤压中间层；
(2)将所述挤压中间层通过电子辐照预交联处理后得到预交联中间层，中间层的辐照加工速度10m/min，辐照电子束流强度为6mA；
(3)将胶膜外层和胶膜内层材料分别涂布于预交联中间层的两侧，分别形成胶膜外层和胶膜内层，成型过程中与中间层形成微交联，得到封装胶膜层，其中成型温度130℃，时间60s。
以上所述仅为本实用新型的较佳实施例而已，并不用以限制本实用新型，凡在本实用新型的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本实用新型的保护范围之内。

Claims (4)

  1. 一种基于凸点封装的抗蠕变易回收晶硅双面发电组件，其特征在于，所述的发电组件包括自上而下依次层叠设置的玻璃前板、第一封装胶膜层、晶硅双面电池片、第二封装胶膜层和玻璃/透明背板，所述的第一封装胶膜层从上而下依次为胶膜外层、胶膜中间层和胶膜内层，第二封装胶膜层从上而下依次为胶膜内层、胶膜中间层和胶膜外层；所述的胶膜中间层内外两面均设有凸点，胶膜外层和胶膜内层均设有与所述凸点相适配的凹槽；所述的凸起和凹槽之间、胶膜外层和胶膜内层通过高温形成微交联。
  2. 根据权利要求1所述的一种基于凸点封装的抗蠕变易回收晶硅双面发电组件，其特征在于，所述的凸点高度为50-250μm。
  3. 根据权利要求1所述的一种基于凸点封装的抗蠕变易回收晶硅双面发电组件，其特征在于，所述的胶膜中间层材料为乙烯-丁烯共聚物或乙烯-辛烯共聚物中的任意一种。
  4. 根据权利要求1所述的一种基于凸点封装的抗蠕变易回收晶硅双面发电组件，其特征在于，所述的胶膜外层和胶膜内层材料为乙烯-醋酸乙烯酯共聚物、乙烯-丁烯共聚物或乙烯-辛烯共聚物中的任意一种。
PCT/CN2021/073512 2020-06-12 2021-01-25 一种基于凸点封装的抗蠕变易回收晶硅双面发电组件 WO2021248918A1 (zh)

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