WO2021239901A1 - Atmospheric-pressure plasma cleaning apparatus - Google Patents

Atmospheric-pressure plasma cleaning apparatus Download PDF

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Publication number
WO2021239901A1
WO2021239901A1 PCT/EP2021/064248 EP2021064248W WO2021239901A1 WO 2021239901 A1 WO2021239901 A1 WO 2021239901A1 EP 2021064248 W EP2021064248 W EP 2021064248W WO 2021239901 A1 WO2021239901 A1 WO 2021239901A1
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WO
WIPO (PCT)
Prior art keywords
jetting
cleaning apparatus
gas
hole
electrode
Prior art date
Application number
PCT/EP2021/064248
Other languages
French (fr)
Inventor
Ken Chang
Anak Agung Sagung Dewi Afiati
Wallace CHUANG
Eckart Schellkes
Allen Liu
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2021239901A1 publication Critical patent/WO2021239901A1/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
    • H05H1/245—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube the plasma being activated using internal electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/40—Surface treatments

Definitions

  • the present application relates to the technical field of integrated circuit manufacture, in particular to a plasma cleaning apparatus in a semiconductor device production process.
  • Plasma cleaning has already become an important technological process for surface treatment besides conventional cleaning techniques (such as mechanical cleaning, water washing and solvent cleaning).
  • Plasma cleaning uses a high-energy plasma generated by a gaseous substance to remove particles, impurities and contaminants from surface regions of semiconductor devices.
  • Plasma cleaning can effectively deal with surface contaminants that cannot be removed by conventional cleaning, to increase the efficiency of bonding operations and the stability of operations.
  • existing plasma cleaning treatments need to be carried out in a vacuum environment, with semiconductor devices at different stages all being required to be sent to a vacuum environment to undergo heated cleaning, and this results in expensive equipment, a complex technological process, low production efficiency and high energy consumption.
  • An object of the present application is to overcome the above shortcomings.
  • the technical solution of the present application solves the problems of a complex technological process, expensive equipment and low production efficiency in a plasma cleaning process in the prior art.
  • an atmospheric- pressure plasma cleaning apparatus connected to a gas source and comprising: a cleaning apparatus body, having a gas supply chamber, an ionization part and a gas discharge chamber, wherein the ionization part is arranged between the gas supply chamber and the gas discharge chamber, the gas supply chamber accommodates a gas inputted by the gas source and is configured to supply the gas to the ionization part, the ionization part has a first electrode and a second electrode which are arranged facing each other with a certain distance being maintained therebetween, the first electrode and second electrode are connected to a power supply, and the gas discharge chamber accommodates a plasma gas generated in an electrode reaction that takes place after electricity is passed between the first electrode and second electrode; and a jetting part connected to the cleaning apparatus body, the jetting part having a jetting through-hole allowing the passage of the plasma gas and an accumulating chamber connected between the jetting through-hole and the gas discharge chamber, the jetting through-hole connecting the gas discharge chamber with the outside of the
  • the accumulating chamber gradually narrows from the gas discharge chamber toward the jetting through-hole.
  • the first electrode is connected to an AC power supply and is covered with a first dielectric
  • the second electrode is grounded and covered with a second dielectric, the first dielectric and second dielectric being arranged facing each other and forming therebetween a dielectric space which generates a plasma according to dielectric charging/discharging, the gas discharge chamber being in communication with the dielectric space.
  • the jetting part is removably mounted to an end of the jetting part, the jetting part being cylindrical or conical.
  • the atmospheric-pressure plasma cleaning apparatus has several jetting parts, the several jetting parts being arranged in a straight line or distributed in an array.
  • the cross-sectional shape of the gas discharge chamber is round, the cross-sectional shape of the gas discharge chamber is round, the internal diameter of the gas discharge chamber is not greater than 15 cm, the cross-sectional shape of the jetting through-hole is round, and the hole diameter of the jetting through-hole is 10 - 1000 microns.
  • the internal diameter of the gas discharge chamber is 0.2 - 11 cm, and the hole diameter of the jetting through-hole is 100 - 800 microns.
  • the hole diameter of the jetting through-hole is 200 - 600 microns.
  • the cross-sectional shape of the gas discharge chamber is round, the internal diameter of the gas discharge chamber is not greater than 15 cm, the cross- sectional shape of the jetting through-hole is rectangular, the lengths of a long edge and a short edge of the jetting through-hole are 10 - 1000 microns, and the ratio of the long edge to the short edge of the jetting through-hole is 1 - 100.
  • the internal diameter of the gas discharge chamber is 0.2 - 11 cm
  • the lengths of the long edge and short edge of the jetting through-hole are 50 - 800 microns
  • the ratio of the long edge to the short edge of the jetting through-hole is 10 - 80.
  • the provision of the jetting part in the plasma cleaning apparatus enables a plasma gas beam maintaining a stable discharge to be generated at atmospheric pressure, thus overcoming the shortcomings in the prior art.
  • the atmospheric-pressure discharge of the plasma cleaning apparatus in the technical solution of the present application is more suited to the needs of large-scale continuous industrial production, with no need for expensive vacuum equipment and maintenance, so costs are greatly reduced.
  • precise cleaning of a semiconductor device surface is achieved through the use of the plasma cleaning apparatus, avoiding the damage to semiconductor devices which occurs in conventional vacuum plasma cleaning processes.
  • Fig. 1 shows a structural schematic drawing of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • Fig. 2 shows a schematic drawing of a sectional structure having a cylindrical jetting part of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • Fig. 3 shows a schematic drawing of a sectional structure having a conical jetting part of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • Fig. 4 shows a schematic drawing of a sectional structure having several conical jetting parts of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • Fig. 5 shows a sectional structural schematic drawing of several jetting parts having different sizes of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • Fig. 6 shows a sectional structural schematic drawing of a jetting part having a screen of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • Fig. 7 shows a schematic drawing of a semiconductor device surface being cleaned by an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • Fig. 8 shows a schematic drawing of a semiconductor device production line comprising an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • Fig. 9 shows a schematic drawing of a semiconductor device packaging procedure using an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
  • an atmospheric-pressure plasma cleaning apparatus 10 is shown.
  • the atmospheric-pressure plasma cleaning apparatus 10 generates a plasma at atmospheric pressure and is used for cleaning a target object such as a surface of a semiconductor device.
  • the plasma cleaning apparatus 10 is connected to an external gas source 600, the gas source 600 being configured to input a gas to the plasma cleaning apparatus 10.
  • the plasma cleaning apparatus 10 comprises the following structure: a cleaning apparatus body 100 and a jetting part 500.
  • the jetting part 500 is connected to the cleaning apparatus body 100, and the jetting part 500 has a jetting through-hole 510 allowing the passage of a gas.
  • the cleaning apparatus body 100 further comprises: a gas supply chamber 200, an ionization part 300 and a gas discharge chamber 400, which are arranged in sequence in a gas delivery direction D.
  • the ionization part 300 is arranged between the gas supply chamber 200 and the gas discharge chamber 400;
  • the gas supply chamber 200 accommodates the gas inputted by the gas source 600, and supplies the gas to the ionization part 300;
  • the ionization part 300 comprises a first electrode 304 and a second electrode 303, wherein the first electrode 304 is connected to an AC power supply (not shown in the figure), the second electrode 303 is grounded, and the second electrode 303 and first electrode 304 are arranged so as to be spaced apart by a certain distance.
  • the first electrode 304 is covered with a first dielectric 301, and the second electrode 303 is covered with a second dielectric 302; the first dielectric 301 and second dielectric 302 may have a round or polygonal cross-sectional shape.
  • the first electrode 304 is connected to the AC power supply in order to form an AC voltage between itself and the second electrode 303.
  • the gas which the gas supply chamber receives from the gas source 600 e.g.
  • oxygen, argon or a mixed gas thereof is supplied by the gas supply chamber 200 to a region between the first electrode 304 and the second electrode 303; the gas flows into a dielectric space 305, which is formed between the first dielectric 301 and second dielectric 302 and generates a plasma according to dielectric charging/discharging, the dielectric space 305 being in communication with the gas discharge chamber 400.
  • the first electrode 304 and second electrode 303 are arranged parallel to the direction of plasma jetting and gas inflow with a planar shape, and face each other.
  • the gas supply chamber 200 continuously supplies gas maintained at a certain density to the dielectric space 305 between the first dielectric 301 and second dielectric 302.
  • first dielectric 301 and second dielectric 302 are arranged in such a way that a certain distance is maintained therebetween, a plasma gas is generated at a certain pressure and generation rate between the first dielectric 301 and second dielectric 302, and the plasma gas thus generated is jetted outward through the gas discharge chamber 400 in communication with the dielectric space 305 and via the jetting through-hole 510 of the jetting part 500, so as to subject a semiconductor device to be cleaned to surface treatment using the ejected plasma gas.
  • the jetting part 500 is removably mounted to an end of the cleaning apparatus body 100, and the jetting part 500 is made of one or more of a corrosion-resistant and impact-resistant ceramic material, glass material or quartz.
  • the jetting part 500 has the jetting through-hole 510 allowing the passage of the plasma gas generated in an electrode reaction taking place between the first dielectric 301 and second dielectric 302, and an accumulating chamber 560 connected between the jetting through-hole 510 and the gas discharge chamber 400; moreover, the jetting through-hole 510 connects the gas discharge chamber 400 with the outside of the jetting part 500.
  • the plasma gas is jetted outward through the jetting through-hole 510.
  • the cross-sectional shape of the gas discharge chamber is round, and the internal diameter of the gas discharge chamber is not greater than 15 cm, e.g. 0.2 - 11 cm.
  • the plasma gas having a jetting pressure is formed with different properties and in different forms according to the form of the jetting through-hole 510; the shape, size, spacing or quantity of the jetting through-hole 510 is adjusted so as to form a plasma gas jetting pressure suitable for the surface state or shape of the target of surface treatment.
  • the atmospheric-pressure plasma cleaning apparatus 10 also maintains a certain state of engagement or connection with a peripheral apparatus or the target object of surface treatment; for example, a cooling system may be included in order to lower the temperature of the plasma cleaning apparatus after operation, the cooling system being connected to the atmospheric-pressure plasma cleaning apparatus 10 via a through-hole penetrating the cleaning apparatus body 100 or jetting part 500.
  • a cooling system may be included in order to lower the temperature of the plasma cleaning apparatus after operation, the cooling system being connected to the atmospheric-pressure plasma cleaning apparatus 10 via a through-hole penetrating the cleaning apparatus body 100 or jetting part 500.
  • an exhaust pipe of an exhaust system is connected to the atmospheric-pressure plasma cleaning apparatus 10 via a through-hole penetrating the cleaning apparatus body 100, for the purpose of discharging by-products produced in the surface reaction between the plasma gas and the target object of surface treatment in the course of the plasma cleaning process.
  • the jetting part 500 has the shape of a cylinder or cone, and the jetting part 500 has the accumulating chamber 560 which gradually narrows from the gas discharge chamber 400 toward the jetting through-hole 510; the accumulating chamber 560 is conducive to the plasma gas having a greater effective operating distance and range after being jetted outward through the jetting through-hole 510.
  • Figs. 4 and 5 show scenarios in which the atmospheric-pressure plasma cleaning apparatus 10 can have several jetting parts 500.
  • several jetting parts 500 may be arranged to be spaced apart in a straight line or not in a straight line, or may be distributed in an array.
  • the several jetting parts 500 may have the same shape and size or different shapes and sizes.
  • Figs. 2 - 4 show the cross-sectional shape of the jetting through-hole 510 as being round; the value of the hole diameter of the jetting through-hole 510 is 10 - 1000 microns. In some embodiments, the value of the hole diameter D of the jetting through-hole 510 is 100 - 800 microns; in some embodiments, the value of the hole diameter D of the jetting through-hole 510 is 200 - 600 microns; in some embodiments, the value of the hole diameter D of the jetting through-hole 510 is 300 - 400 microns.
  • the respective values of the lengths of a long edge X and a short edge Y of the cross section of the jetting through-hole 510 are 10 - 1000 microns; in some embodiments, the respective values of the lengths of the long edge X and short edge Y of the cross section of the jetting through-hole 510 are 50 - 800 microns; in some embodiments, the respective values of the lengths of the long edge X and short edge Y of the cross section of the jetting through-hole 510 are 100 - 600 microns; in some embodiments, the respective values of the lengths of the long edge X and short edge Y of the cross section of the jetting through-hole 510 are 300 - 400 microns.
  • the ratio of the long edge X to the short edge Y of the cross section of the jetting through-hole 510 is 1 - 100; in some embodiments, the ratio of the long edge X to the short edge Y of the cross section of the jetting through-hole 510 is 10 - 80; in some embodiments, the ratio of the long edge X to the short edge Y of the cross section of the jetting through- hole 510 is 20 - 60; in some embodiments, the ratio of the long edge X to the short edge Y of the cross section of the jetting through-hole 510 is 30 - 50.
  • Fig. 6 further shows a screen 530 having an opening and disposed at the jetting part 500, the opening of the screen 530 forming the jetting through-hole 510; the screen 530 has one or more jetting through-hole 510, and the quantity and size of the jetting through-hole 510 can form a plasma gas jetting pressure and jetting manner suitable for the surface state or shape of the target object of surface treatment.
  • the screen 530 is manufactured and formed in such a way as to be integrally formed with the jetting part 500, or may be manufactured separately from the jetting part 500 and then fitted thereto.
  • the screen 530 is formed of one or more of corrosion-resistant and impact-resistant ceramic materials (e.g. alumina or magnesia), glass materials and quartz by sintering, or the screen 530 is formed of a metal material such as stainless steel, aluminum alloy or nickel alloy by CNC machine tool machining or stamping.
  • the plasma cleaning apparatus 10 having the jetting through-hole 510 also achieves precise cleaning of the semiconductor device surface.
  • the plasma cleaning apparatus 10 moves along a preset cleaning path 540 which is set according to the size and shape of different semiconductor devices and the electronic components carried (as indicated by the arrows), to achieve precise cleaning of a cleaning region 550 as shown in the figure, avoiding the damage to semiconductor devices which occurs in conventional vacuum plasma cleaning processes.
  • Fig. 8 shows a schematic diagram of a semiconductor device production line comprising a plasma cleaning apparatus, wherein the plasma cleaning apparatus 10 is connected to a movement mechanism 20, and the plasma cleaning apparatus 10 moves in three-dimensional space under the driving action of the movement mechanism 20.
  • the movement mechanism 20 can control the precision of movement of the plasma cleaning apparatus 10 in each direction of three-dimensional space; in this embodiment, the movement mechanism 20 has a precision of 10 microns/inch.
  • the semiconductor device that is to undergo surface treatment is carried on a carrying platform 30 located below the jetting part 520 of the plasma cleaning apparatus 10.
  • the semiconductor device 40 is subjected to surface cleaning by the plasma gas that is generated between the first electrode 304 and second electrode 303 and jetted out via the jetting through-hole 510.
  • the semiconductor device 40 is transported from the previous station 60 of the semiconductor device production line to a cleaning station 70 by a transfer apparatus 50 capable of moving toward one side; when surface cleaning is complete, the semiconductor device 40 continues to be transported by the transfer apparatus 150 to the next station 80 of the semiconductor device production line.
  • this figure shows a semiconductor device packaging procedure 800 which uses the plasma cleaning apparatus.
  • a chip bonding process Die Attach
  • the semiconductor device is transported by the transfer apparatus 50 to a second station 820 to be subjected to surface cleaning by the plasma cleaning apparatus 10; the transfer apparatus 50 then transports the semiconductor device to a third station 830 to undergo a lead bonding process (Wire Bonding), and when the lead bonding process is complete, the transfer apparatus 50 transports the semiconductor device to a fourth station 840 to be subjected to further surface cleaning by the plasma cleaning apparatus 10; when cleaning is complete, the semiconductor device is further transported to a fifth station 850, and undergoes encapsulation/molding treatment, i.e.
  • the second station 820 and fourth station 840 serving as cleaning stations may be integrated with each station in the semiconductor packaging procedure, e.g. the second station 820 being integrated with the first station 810 and the fourth station 840 being integrated with the third station 830, or the second station 820 and fourth station 840 may exist as separate cleaning stations, or the second station 820 and fourth station 840 may even be the same station.
  • the plasma cleaning apparatus 10 is connected to the movement mechanism 20 and moves in three-dimensional space under the driving action of the movement mechanism 20, thus it is possible for the cleaning stations to be integrated in the semiconductor device packaging production line, so the plasma cleaning apparatus 10 need not exist as an externally connected special-purpose device.
  • the atmospheric- pressure discharge of the plasma cleaning apparatus in this embodiment is more suited to the needs of large-scale continuous industrial production, with no need for expensive vacuum equipment and maintenance, so costs are greatly reduced.
  • the plasma cleaning apparatus is flexibly equipped with different jetting parts according to the surface state and form of different cleaning targets, and can achieve precise cleaning of the surface of the cleaning target.

Abstract

A plasma cleaning apparatus, connected to a gas source and comprising: a cleaning apparatus body, having a gas supply chamber, an ionization part and a gas discharge chamber, wherein the ionization part is arranged between the gas supply chamber and the gas discharge chamber, the gas supply chamber accommodates a gas inputted by the gas source and is configured to supply the gas to the ionization part, the ionization part has a first electrode and a second electrode which are arranged facing each other with a certain distance being maintained therebetween, the first electrode and second electrode are connected to a power supply, and the gas discharge chamber accommodates a plasma gas generated in an electrode reaction that takes place after electricity is passed between the first electrode and second electrode; and a jetting part connected to the cleaning apparatus body, the jetting part having a jetting through-hole allowing the passage of the plasma gas and an accumulating chamber connected between the jetting through-hole and the gas discharge chamber, the jetting through-hole connecting the gas discharge chamber with the outside of the jetting part. The atmospheric-pressure discharge of the plasma cleaning apparatus is suitable for large-scale continuous industrial production, with no need for expensive vacuum equipment, so costs are reduced.

Description

Description
Atmospheric-pressure plasma cleaning apparatus Technical field
The present application relates to the technical field of integrated circuit manufacture, in particular to a plasma cleaning apparatus in a semiconductor device production process.
Background art
The production process of a semiconductor device is subject to various types of harmful contamination or corrosion. All kinds of contaminating impurities such as particles, metal ions, organic matter and residual abrasive particles will be present on the surface of the semiconductor device, e.g. a wafer chip. If these contaminants and corrosion cannot be thoroughly removed, the properties, quality, reliability and finished product rate of the semiconductor device will be severely affected. Plasma cleaning has already become an important technological process for surface treatment besides conventional cleaning techniques (such as mechanical cleaning, water washing and solvent cleaning). Plasma cleaning uses a high-energy plasma generated by a gaseous substance to remove particles, impurities and contaminants from surface regions of semiconductor devices. Plasma cleaning can effectively deal with surface contaminants that cannot be removed by conventional cleaning, to increase the efficiency of bonding operations and the stability of operations. However, existing plasma cleaning treatments need to be carried out in a vacuum environment, with semiconductor devices at different stages all being required to be sent to a vacuum environment to undergo heated cleaning, and this results in expensive equipment, a complex technological process, low production efficiency and high energy consumption.
Moreover, although it is possible to remove contaminants from the surface of a semiconductor device by plasma cleaning, pointed-end discharge and local ignition readily occur if the semiconductor device comes into contact with an electrode of an ionic cleaning machine, with the result that the semiconductor device becomes charged; this is likely to cause damage to the semiconductor device, reducing product reliability. Summary of the invention
An object of the present application is to overcome the above shortcomings. The technical solution of the present application solves the problems of a complex technological process, expensive equipment and low production efficiency in a plasma cleaning process in the prior art.
In some particular embodiments of the present application, an atmospheric- pressure plasma cleaning apparatus is provided, connected to a gas source and comprising: a cleaning apparatus body, having a gas supply chamber, an ionization part and a gas discharge chamber, wherein the ionization part is arranged between the gas supply chamber and the gas discharge chamber, the gas supply chamber accommodates a gas inputted by the gas source and is configured to supply the gas to the ionization part, the ionization part has a first electrode and a second electrode which are arranged facing each other with a certain distance being maintained therebetween, the first electrode and second electrode are connected to a power supply, and the gas discharge chamber accommodates a plasma gas generated in an electrode reaction that takes place after electricity is passed between the first electrode and second electrode; and a jetting part connected to the cleaning apparatus body, the jetting part having a jetting through-hole allowing the passage of the plasma gas and an accumulating chamber connected between the jetting through-hole and the gas discharge chamber, the jetting through-hole connecting the gas discharge chamber with the outside of the jetting part.
Furthermore, the accumulating chamber gradually narrows from the gas discharge chamber toward the jetting through-hole.
Furthermore, the first electrode is connected to an AC power supply and is covered with a first dielectric, the second electrode is grounded and covered with a second dielectric, the first dielectric and second dielectric being arranged facing each other and forming therebetween a dielectric space which generates a plasma according to dielectric charging/discharging, the gas discharge chamber being in communication with the dielectric space. Furthermore, the jetting part is removably mounted to an end of the jetting part, the jetting part being cylindrical or conical.
Furthermore, the atmospheric-pressure plasma cleaning apparatus has several jetting parts, the several jetting parts being arranged in a straight line or distributed in an array.
Furthermore, the cross-sectional shape of the gas discharge chamber is round, the cross-sectional shape of the gas discharge chamber is round, the internal diameter of the gas discharge chamber is not greater than 15 cm, the cross-sectional shape of the jetting through-hole is round, and the hole diameter of the jetting through-hole is 10 - 1000 microns.
Furthermore, the internal diameter of the gas discharge chamber is 0.2 - 11 cm, and the hole diameter of the jetting through-hole is 100 - 800 microns.
Furthermore, the hole diameter of the jetting through-hole is 200 - 600 microns.
Furthermore, the cross-sectional shape of the gas discharge chamber is round, the internal diameter of the gas discharge chamber is not greater than 15 cm, the cross- sectional shape of the jetting through-hole is rectangular, the lengths of a long edge and a short edge of the jetting through-hole are 10 - 1000 microns, and the ratio of the long edge to the short edge of the jetting through-hole is 1 - 100.
Furthermore, the internal diameter of the gas discharge chamber is 0.2 - 11 cm, the lengths of the long edge and short edge of the jetting through-hole are 50 - 800 microns, and the ratio of the long edge to the short edge of the jetting through-hole is 10 - 80.
It can be seen from the above that in the technical solution of the present application, the provision of the jetting part in the plasma cleaning apparatus enables a plasma gas beam maintaining a stable discharge to be generated at atmospheric pressure, thus overcoming the shortcomings in the prior art. Compared with the prior art, the atmospheric-pressure discharge of the plasma cleaning apparatus in the technical solution of the present application is more suited to the needs of large-scale continuous industrial production, with no need for expensive vacuum equipment and maintenance, so costs are greatly reduced. Furthermore, precise cleaning of a semiconductor device surface is achieved through the use of the plasma cleaning apparatus, avoiding the damage to semiconductor devices which occurs in conventional vacuum plasma cleaning processes.
Brief description of the drawings
The features, characteristics, advantages and benefits of the present application will become obvious through the following detailed description in conjunction with the drawings.
Fig. 1 shows a structural schematic drawing of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
Fig. 2 shows a schematic drawing of a sectional structure having a cylindrical jetting part of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
Fig. 3 shows a schematic drawing of a sectional structure having a conical jetting part of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
Fig. 4 shows a schematic drawing of a sectional structure having several conical jetting parts of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
Fig. 5 shows a sectional structural schematic drawing of several jetting parts having different sizes of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
Fig. 6 shows a sectional structural schematic drawing of a jetting part having a screen of an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
Fig. 7 shows a schematic drawing of a semiconductor device surface being cleaned by an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
Fig. 8 shows a schematic drawing of a semiconductor device production line comprising an atmospheric-pressure plasma cleaning apparatus in a particular embodiment. Fig. 9 shows a schematic drawing of a semiconductor device packaging procedure using an atmospheric-pressure plasma cleaning apparatus in a particular embodiment.
Detailed description of the invention
Some particular embodiments of the present application are described in detail below in conjunction with the drawings.
Referring to Fig. 1, an atmospheric-pressure plasma cleaning apparatus 10 is shown. The atmospheric-pressure plasma cleaning apparatus 10 generates a plasma at atmospheric pressure and is used for cleaning a target object such as a surface of a semiconductor device. As shown in the figure, the plasma cleaning apparatus 10 is connected to an external gas source 600, the gas source 600 being configured to input a gas to the plasma cleaning apparatus 10. The plasma cleaning apparatus 10 comprises the following structure: a cleaning apparatus body 100 and a jetting part 500. The jetting part 500 is connected to the cleaning apparatus body 100, and the jetting part 500 has a jetting through-hole 510 allowing the passage of a gas.
The cleaning apparatus body 100 further comprises: a gas supply chamber 200, an ionization part 300 and a gas discharge chamber 400, which are arranged in sequence in a gas delivery direction D. The ionization part 300 is arranged between the gas supply chamber 200 and the gas discharge chamber 400; the gas supply chamber 200 accommodates the gas inputted by the gas source 600, and supplies the gas to the ionization part 300; the ionization part 300 comprises a first electrode 304 and a second electrode 303, wherein the first electrode 304 is connected to an AC power supply (not shown in the figure), the second electrode 303 is grounded, and the second electrode 303 and first electrode 304 are arranged so as to be spaced apart by a certain distance. The first electrode 304 is covered with a first dielectric 301, and the second electrode 303 is covered with a second dielectric 302; the first dielectric 301 and second dielectric 302 may have a round or polygonal cross-sectional shape. The first electrode 304 is connected to the AC power supply in order to form an AC voltage between itself and the second electrode 303. The gas which the gas supply chamber receives from the gas source 600, e.g. oxygen, argon or a mixed gas thereof, is supplied by the gas supply chamber 200 to a region between the first electrode 304 and the second electrode 303; the gas flows into a dielectric space 305, which is formed between the first dielectric 301 and second dielectric 302 and generates a plasma according to dielectric charging/discharging, the dielectric space 305 being in communication with the gas discharge chamber 400. The first electrode 304 and second electrode 303 are arranged parallel to the direction of plasma jetting and gas inflow with a planar shape, and face each other. The gas supply chamber 200 continuously supplies gas maintained at a certain density to the dielectric space 305 between the first dielectric 301 and second dielectric 302. Due to the fact that the first dielectric 301 and second dielectric 302 are arranged in such a way that a certain distance is maintained therebetween, a plasma gas is generated at a certain pressure and generation rate between the first dielectric 301 and second dielectric 302, and the plasma gas thus generated is jetted outward through the gas discharge chamber 400 in communication with the dielectric space 305 and via the jetting through-hole 510 of the jetting part 500, so as to subject a semiconductor device to be cleaned to surface treatment using the ejected plasma gas.
The jetting part 500 is removably mounted to an end of the cleaning apparatus body 100, and the jetting part 500 is made of one or more of a corrosion-resistant and impact-resistant ceramic material, glass material or quartz. The jetting part 500 has the jetting through-hole 510 allowing the passage of the plasma gas generated in an electrode reaction taking place between the first dielectric 301 and second dielectric 302, and an accumulating chamber 560 connected between the jetting through-hole 510 and the gas discharge chamber 400; moreover, the jetting through-hole 510 connects the gas discharge chamber 400 with the outside of the jetting part 500. The plasma gas is jetted outward through the jetting through-hole 510. The cross-sectional shape of the gas discharge chamber is round, and the internal diameter of the gas discharge chamber is not greater than 15 cm, e.g. 0.2 - 11 cm. The plasma gas having a jetting pressure is formed with different properties and in different forms according to the form of the jetting through-hole 510; the shape, size, spacing or quantity of the jetting through-hole 510 is adjusted so as to form a plasma gas jetting pressure suitable for the surface state or shape of the target of surface treatment.
In addition, the atmospheric-pressure plasma cleaning apparatus 10 also maintains a certain state of engagement or connection with a peripheral apparatus or the target object of surface treatment; for example, a cooling system may be included in order to lower the temperature of the plasma cleaning apparatus after operation, the cooling system being connected to the atmospheric-pressure plasma cleaning apparatus 10 via a through-hole penetrating the cleaning apparatus body 100 or jetting part 500. In some embodiments, an exhaust pipe of an exhaust system is connected to the atmospheric-pressure plasma cleaning apparatus 10 via a through-hole penetrating the cleaning apparatus body 100, for the purpose of discharging by-products produced in the surface reaction between the plasma gas and the target object of surface treatment in the course of the plasma cleaning process.
Referring to Figs. 2 and 3, the jetting part 500 has the shape of a cylinder or cone, and the jetting part 500 has the accumulating chamber 560 which gradually narrows from the gas discharge chamber 400 toward the jetting through-hole 510; the accumulating chamber 560 is conducive to the plasma gas having a greater effective operating distance and range after being jetted outward through the jetting through-hole 510.
Figs. 4 and 5 show scenarios in which the atmospheric-pressure plasma cleaning apparatus 10 can have several jetting parts 500. As shown in the figures, according to actual requirements, several jetting parts 500 may be arranged to be spaced apart in a straight line or not in a straight line, or may be distributed in an array. Depending on the target object of surface treatment and the environment, the several jetting parts 500 may have the same shape and size or different shapes and sizes.
Figs. 2 - 4 show the cross-sectional shape of the jetting through-hole 510 as being round; the value of the hole diameter of the jetting through-hole 510 is 10 - 1000 microns. In some embodiments, the value of the hole diameter D of the jetting through-hole 510 is 100 - 800 microns; in some embodiments, the value of the hole diameter D of the jetting through-hole 510 is 200 - 600 microns; in some embodiments, the value of the hole diameter D of the jetting through-hole 510 is 300 - 400 microns.
Continuing to refer to Figs. 2 - 4, when the cross-sectional shape of the jetting through-hole 510 is rectangular, the respective values of the lengths of a long edge X and a short edge Y of the cross section of the jetting through-hole 510 are 10 - 1000 microns; in some embodiments, the respective values of the lengths of the long edge X and short edge Y of the cross section of the jetting through-hole 510 are 50 - 800 microns; in some embodiments, the respective values of the lengths of the long edge X and short edge Y of the cross section of the jetting through-hole 510 are 100 - 600 microns; in some embodiments, the respective values of the lengths of the long edge X and short edge Y of the cross section of the jetting through-hole 510 are 300 - 400 microns. Furthermore, the ratio of the long edge X to the short edge Y of the cross section of the jetting through-hole 510 is 1 - 100; in some embodiments, the ratio of the long edge X to the short edge Y of the cross section of the jetting through-hole 510 is 10 - 80; in some embodiments, the ratio of the long edge X to the short edge Y of the cross section of the jetting through- hole 510 is 20 - 60; in some embodiments, the ratio of the long edge X to the short edge Y of the cross section of the jetting through-hole 510 is 30 - 50.
In addition, Fig. 6 further shows a screen 530 having an opening and disposed at the jetting part 500, the opening of the screen 530 forming the jetting through-hole 510; the screen 530 has one or more jetting through-hole 510, and the quantity and size of the jetting through-hole 510 can form a plasma gas jetting pressure and jetting manner suitable for the surface state or shape of the target object of surface treatment. The screen 530 is manufactured and formed in such a way as to be integrally formed with the jetting part 500, or may be manufactured separately from the jetting part 500 and then fitted thereto. The screen 530 is formed of one or more of corrosion-resistant and impact-resistant ceramic materials (e.g. alumina or magnesia), glass materials and quartz by sintering, or the screen 530 is formed of a metal material such as stainless steel, aluminum alloy or nickel alloy by CNC machine tool machining or stamping.
The plasma cleaning apparatus 10 having the jetting through-hole 510 also achieves precise cleaning of the semiconductor device surface. Referring to Fig. 7, the plasma cleaning apparatus 10 moves along a preset cleaning path 540 which is set according to the size and shape of different semiconductor devices and the electronic components carried (as indicated by the arrows), to achieve precise cleaning of a cleaning region 550 as shown in the figure, avoiding the damage to semiconductor devices which occurs in conventional vacuum plasma cleaning processes.
Fig. 8 shows a schematic diagram of a semiconductor device production line comprising a plasma cleaning apparatus, wherein the plasma cleaning apparatus 10 is connected to a movement mechanism 20, and the plasma cleaning apparatus 10 moves in three-dimensional space under the driving action of the movement mechanism 20. In this embodiment, the movement mechanism 20 can control the precision of movement of the plasma cleaning apparatus 10 in each direction of three-dimensional space; in this embodiment, the movement mechanism 20 has a precision of 10 microns/inch. The semiconductor device that is to undergo surface treatment is carried on a carrying platform 30 located below the jetting part 520 of the plasma cleaning apparatus 10. The semiconductor device 40 is subjected to surface cleaning by the plasma gas that is generated between the first electrode 304 and second electrode 303 and jetted out via the jetting through-hole 510. Specifically, the semiconductor device 40 is transported from the previous station 60 of the semiconductor device production line to a cleaning station 70 by a transfer apparatus 50 capable of moving toward one side; when surface cleaning is complete, the semiconductor device 40 continues to be transported by the transfer apparatus 150 to the next station 80 of the semiconductor device production line.
Referring to Fig. 9, this figure shows a semiconductor device packaging procedure 800 which uses the plasma cleaning apparatus. In the semiconductor device packaging production line, first of all a chip bonding process (Die Attach) is performed at a first station 810, then the semiconductor device is transported by the transfer apparatus 50 to a second station 820 to be subjected to surface cleaning by the plasma cleaning apparatus 10; the transfer apparatus 50 then transports the semiconductor device to a third station 830 to undergo a lead bonding process (Wire Bonding), and when the lead bonding process is complete, the transfer apparatus 50 transports the semiconductor device to a fourth station 840 to be subjected to further surface cleaning by the plasma cleaning apparatus 10; when cleaning is complete, the semiconductor device is further transported to a fifth station 850, and undergoes encapsulation/molding treatment, i.e. Molding, at the fifth station 850. Here, the second station 820 and fourth station 840 serving as cleaning stations may be integrated with each station in the semiconductor packaging procedure, e.g. the second station 820 being integrated with the first station 810 and the fourth station 840 being integrated with the third station 830, or the second station 820 and fourth station 840 may exist as separate cleaning stations, or the second station 820 and fourth station 840 may even be the same station. The plasma cleaning apparatus 10 is connected to the movement mechanism 20 and moves in three-dimensional space under the driving action of the movement mechanism 20, thus it is possible for the cleaning stations to be integrated in the semiconductor device packaging production line, so the plasma cleaning apparatus 10 need not exist as an externally connected special-purpose device.
Compared with a conventional plasma cleaning apparatus, the atmospheric- pressure discharge of the plasma cleaning apparatus in this embodiment is more suited to the needs of large-scale continuous industrial production, with no need for expensive vacuum equipment and maintenance, so costs are greatly reduced. Furthermore, the plasma cleaning apparatus is flexibly equipped with different jetting parts according to the surface state and form of different cleaning targets, and can achieve precise cleaning of the surface of the cleaning target.

Claims

Claims
1. An atmospheric-pressure plasma cleaning apparatus, connected to a gas source and characterized by comprising: a cleaning apparatus body, having a gas supply chamber, an ionization part and a gas discharge chamber, wherein the ionization part is arranged between the gas supply chamber and the gas discharge chamber, the gas supply chamber accommodates a gas inputted by the gas source and is configured to supply the gas to the ionization part, the ionization part has a first electrode and a second electrode which are arranged facing each other with a certain distance being maintained therebetween, the first electrode and second electrode are connected to a power supply, and the gas discharge chamber accommodates a plasma gas generated in an electrode reaction that takes place after electricity is passed between the first electrode and second electrode; and a jetting part connected to the cleaning apparatus body, the jetting part having a jetting through-hole allowing the passage of the plasma gas and an accumulating chamber connected between the jetting through-hole and the gas discharge chamber, the jetting through-hole connecting the gas discharge chamber with the outside of the jetting part.
2. The atmospheric-pressure plasma cleaning apparatus as claimed in claim 1, characterized in that the accumulating chamber gradually narrows from the gas discharge chamber toward the jetting through-hole.
3. The atmospheric-pressure plasma cleaning apparatus as claimed in claim 2, characterized in that the first electrode is connected to an AC power supply and is covered with a first dielectric, the second electrode is grounded and covered with a second dielectric, the first dielectric and second dielectric being arranged facing each other and forming therebetween a dielectric space which generates a plasma according to dielectric charging/discharging, the gas discharge chamber being in communication with the dielectric space.
4. The atmospheric-pressure plasma cleaning apparatus as claimed in claim 3, characterized in that the jetting part is removably mounted to an end of the cleaning apparatus body, the jetting part being cylindrical or conical.
5. The atmospheric-pressure plasma cleaning apparatus as claimed in claim 4, characterized in that the atmospheric-pressure plasma cleaning apparatus has several jetting parts, the several jetting parts being arranged in a straight line or distributed in an array.
6. The atmospheric-pressure plasma cleaning apparatus as claimed in any one of claims 1 - 5, characterized in that the cross-sectional shape of the gas discharge chamber is round, the internal diameter of the gas discharge chamber is not greater than 15 cm, the cross-sectional shape of the jetting through-hole is round, and the hole diameter of the jetting through-hole is 10 - 1000 microns.
7. The atmospheric-pressure plasma cleaning apparatus as claimed in claim 6, characterized in that the internal diameter of the gas discharge chamber is 0.2
- 11 cm, and the hole diameter of the jetting through-hole is 100 - 800 microns.
8. The atmospheric-pressure plasma cleaning apparatus as claimed in claim 6, characterized in that the hole diameter of the jetting through-hole is 200 - 600 microns.
9. The atmospheric-pressure plasma cleaning apparatus as claimed in any one of claims 1 - 5, characterized in that the cross-sectional shape of the gas discharge chamber is round, the internal diameter of the gas discharge chamber is not greater than 15 cm, the cross-sectional shape of the jetting through-hole is rectangular, the lengths of a long edge and a short edge of the jetting through-hole are 10 - 1000 microns, and the ratio of the long edge to the short edge of the jetting through-hole is 1 - 100.
10. The atmospheric-pressure plasma cleaning apparatus as claimed in claim 9, characterized in that the internal diameter of the gas discharge chamber is 0.2
- 11 cm, the lengths of the long edge and short edge of the jetting through-hole are 50 - 800 microns, and the ratio of the long edge to the short edge of the jetting through-hole is 10 - 80.
PCT/EP2021/064248 2020-05-29 2021-05-27 Atmospheric-pressure plasma cleaning apparatus WO2021239901A1 (en)

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