CN207282468U - Plasma thinning device - Google Patents
Plasma thinning device Download PDFInfo
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- CN207282468U CN207282468U CN201721215002.8U CN201721215002U CN207282468U CN 207282468 U CN207282468 U CN 207282468U CN 201721215002 U CN201721215002 U CN 201721215002U CN 207282468 U CN207282468 U CN 207282468U
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- Prior art keywords
- plasma
- electrode
- gap
- inert gas
- utility
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- 239000007789 gas Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 30
- 239000011261 inert gas Substances 0.000 claims abstract description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229910018503 SF6 Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 4
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims 1
- 238000010891 electric arc Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003694 hair properties Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The utility model relates to a semiconductor wafer processing field discloses a plasma attenuate device, including first electrode, second electrode, inert gas feeding device and the gaseous feeding device of sculpture, wherein, first electrode and second electrode parallel arrangement have the clearance between the two, and inert gas feeding device is used for letting in inert gas in to the clearance to form plasma in the clearance, plasma forms plasma flame to the outer blowout in clearance, and the gaseous feeding device of sculpture is arranged in letting in etching gas in to plasma flame. The utility model can increase the distance between the workpiece to be processed and the electrode, and ensure the uniformity of the large-size wafer during processing; and simultaneously, the utility model discloses an etching gas lets in the outer plasma flame of electrode, can not produce arc discharge, so can guarantee plasma's stability, and then can adapt to the processing of jumbo size wafer.
Description
Technical field
Semiconductor wafer manufacture field is the utility model is related to, more particularly, to the dress that wafer grinding is carried out using plasma
Put.
Background technology
In integrated circuit technology, most integrated circuit is manufactured in the superficial layer of chip, in order to make chip up to a hundred
It will not be ruptured in road technological process, therefore need to make the thickness for allowing chip to keep certain, and in order to realize the encapsulation and heat dissipation in later stage,
Need to carry out thinning operation to chip again, remove the unnecessary base material in its back side.
A kind of method performed etching using plasma is presently, there are, i.e., excites etching gas using radio-frequency power supply, makes
It, which is ionized, forms the plasma containing a large amount of electronics, ion, excited atom, molecule and free radical isoreactivity ion.Deng from
When daughter is in contact with chip, the atom of wafer surface can be chemically reacted with the active particle in plasma, and generation is waved
The reaction product of hair property, removes so as to fulfill the not damaged of wafer material.
Relatively common plasma source includes direct-type plasma source on the market at present, and there are some problem for it：
1st, referring to the drawings 1, direct-type plasma source needs chip to be processed being positioned on grounding electrode, plasma
Body is produced in chip and between lateral electrode, therefore it is required that it is (bent according to Pashen with the distance of chip to be less than 2mm to lateral electrode
Line, this is the necessary condition of atmospheric plasma discharge).Due to gap very little, in the processing in face of large-sized wafer
When it is difficult to ensure that processing uniformity.
2nd, in order to perform etching processing, etching gas are filled in lateral electrode between chip, and etching gas have electricity
Feminine gender, can adsorb in plasma and electronically form electron cloud, which is accelerated under the action of electric field between the electrodes, causes
Uniform glow discharge becomes non-uniform, extreme temperatures arc discharges, i.e. direct-type plasma is difficult to stablize to produce greatly
Size and the glow plasma that with the addition of etching gas, the thinned processing of large-sized wafer can not be adapted to.
Utility model content
For overcome the deficiencies in the prior art, the utility model provides a kind of plasma thinning device, existing for solving
Plasma source does not adapt to the problem of large-sized wafer processing.
Technical solution is used by the utility model solves its technical problem：
A kind of plasma thinning device, including first electrode, second electrode, inert gas feedway and etching gas supply
To device, wherein, first electrode is arranged in parallel with second electrode, is used for gap, inert gas feedway therebetween
Inert gas is passed through into gap, to form plasma in gap, plasma is sprayed to outside gap forms plasma
Flame, etching gas feedway are used to be passed through etching gas into plasma flame.
As the further improved procedure of such scheme, the length of plasma flame is more than 10mm.
As the further improved procedure of such scheme, the workbench for carrying workpiece to be processed is further included, gap is just
To workbench.
As the further improved procedure of such scheme, mobile module is further included, mobile module is used to drive workbench phase
To first electrode, second electrode movement, or driving first electrode, second electrode with respect to working table movement.
As the further improved procedure of such scheme, inert gas includes helium or argon gas.
As the further improved procedure of such scheme, etching gas are carbon tetrafluoride or sulfur hexafluoride.
As the further improved procedure of such scheme, the inert gas purge position ejected by inert gas feedway
In the plasma in gap to form plasma flame.
The beneficial effects of the utility model are：
The utility model can increase the distance between workpiece to be processed and electrode, ensure equal when large-sized wafer is processed
Even property；Meanwhile be passed through in plasma flame of the etching gas of the utility model outside electrode, arc discharge will not be produced,
Therefore can ensure the stability of plasma, and then can adapt to the processing of large-sized wafer.
Brief description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples.
Fig. 1 is the schematic diagram of direct-type plasma source in the prior art；
Fig. 2 is the schematic perspective view of the utility model one embodiment.
Embodiment
Carried out below with reference to the technique effect of the design of embodiment and attached drawing to the utility model, concrete structure and generation
Clear, complete description, to be completely understood by the purpose of this utility model, scheme and effect.It should be noted that do not conflicting
In the case of, the feature in embodiment and embodiment in the application can be mutually combined.
It should be noted that unless otherwise specified, when a certain feature is referred to as " fixing ", " connection " in another feature,
It can directly fix, be connected in another feature, can also indirectly fix, be connected in another feature.In addition, this
The descriptions such as the up, down, left, right, before and after used in utility model are only relative to each composition portion of the utility model in attached drawing
For the mutual alignment relation divided.
In addition, unless otherwise defined, the technology of all of technologies and scientific terms used here by the article and the art
The normally understood implication of personnel is identical.Term used in the description is intended merely to description specific embodiment herein, without
It is to limit the utility model.Term as used herein " and/or " include appointing for one or more relevant Listed Items
The combination of meaning.
Reference Fig. 1, shows the schematic diagram of direct-type plasma source in the prior art.As shown in the figure, direct-type etc. from
Daughter source includes electrode 1 and electrode 2, and electrode 1 is oppositely arranged with electrode 2, therebetween with gap.Chip 3 to be processed needs
Place on the electrodes 2, i.e., chip 3 can be considered a part for electrode 2, and plasma a is produced between chip 3 and electrode 1, root
According to Pashen curves, the necessary condition that plasma discharge is produced under atmospheric pressure environment is that electrode 1 and the distance of chip 3 are less than
2mm, due to this limitation, direct-type plasma source is when in face of the processing of large-sized wafer it is difficult to ensure that processes is uniform
Property.
Secondly, etching gas are filled in lateral electrode with that between chip, uniform glow discharge can be caused to become uneven
, the arc discharges of extreme temperatures, i.e. direct-type plasma is difficult to stablize to produce large-sized and with the addition of etching gas
Glow plasma, can not adapt to the thinned processing of large-sized wafer.
Based on above-mentioned, the utility model provides a kind of plasma thinning device, with reference to Fig. 2, shows the utility model
The schematic perspective view of one embodiment.The utility model includes first electrode 4, second electrode 5, inert gas feedway (not
Show), etching gas feedway 6 and radio-frequency power supply 7.
The utility model is again provided with two electrodes, i.e., above-mentioned first electrode 4 and second electrode 5, and plasma produces
Between the electrodes, the utility model difference with the prior art includes：Electrode and chip in the utility model is separately positioned.Tool
As shown in the figure, first electrode 4, second electrode 5 preferably use plate electrode, the two is arranged in parallel body, has gap between electrode,
The gap width equally meets above-mentioned limitation (i.e. less than 2mm).First electrode 4 is connected with radio-frequency power supply 7, and second electrode 5 is ground connection
Electrode.
Unshowned inert gas feedway is used to be passed through inertia into the gap between first electrode 4, second electrode 5
Gas, in the case where electrode is powered, can produce plasma, plasma is sprayed out of gap forms plasma in gap
Flame b, is passed through etching gas into plasma flame by etching gas feedway 6 again at this time, can be so that plasma
Body flame has etching property.The utility model carries out the etching of chip 3 by the plasma flame outwards sprayed, and chip 3 is not
The generation of plasma is participated in, therefore the distance between chip 3 and electrode can break through limitation (chip 3 and the electricity of above-mentioned 2mm distances
The distance between pole is determined according to the length of plasma flame, can generally reach more than 10mm) so that subtracting
Thin device is adapted to the chip of various shapes, thickness, you can to increase the scope of application of thinning device；Secondly, this practicality is new
The etching gas of type are passed through in the plasma flame outside electrode, no electric field at this, will not produce arc discharge, therefore can be with
Ensure the stability of plasma, and then can adapt to the processing of large-sized wafer.
Specifically, the length of plasma generator is more than 350mm in the utility model, can be brilliant to 12 inches of large scale
Piece carries out thinning operation.
Preferably, the utility model is additionally provided with the workbench 8 for bearing wafer, and first electrode 4, second electrode 5 are excellent
Gap vertical face workbench 8 of the choosing between the surface of workbench 8, electrode.
Further, the utility model is additionally provided with mobile module (not shown), which is used to drive 8 phase of workbench
First electrode 4, second electrode 5 are moved (i.e. electrode is fixed and working table movement), or driving first electrode 4, second electrode 5
Move with respect to workbench 8 (i.e. electrode movement and workbench is fixed), preferably use the former in the present embodiment, utilize the movement of electrode
Realize the uniform etching of wafer surface.Mobile module preferably uses high precision movement module, can specifically use known servo
Motor and the combination of screw rod transmission system, the utility model are not especially limited this.
In the utility model inert gas used be helium either argon gas etching gas used be carbon tetrafluoride or
Sulfur hexafluoride.
A kind of preferred solution of plasma flame is formed as plasma, is utilized in the utility model by inert gas
The inert gas that feedway ejects purges the plasma in gap, i.e., inert gas is on the one hand as generation etc.
The raw material of gas ions, on the other hand drives plasma to form plasma flame as power source.
The invention also discloses a kind of plasma thining method, comprise the following steps,
S10 sets two pieces of electrodes being placed in parallel, and one of electrode is connected with radio-frequency power supply, another piece of electrode conduct
Grounding electrode, has the gap for meeting discharging condition between electrode.
S20 is passed through the inert gases such as helium, argon gas into gap in the case where electrode is powered, so that the shape in gap
Into plasma.
S30 makes plasma spray to outside gap to form plasma flame using inert gas source or other devices, and
The etching gas such as carbon tetrafluoride, sulfur hexafluoride are passed through into plasma flame.
S40 performs etching processing using the plasma flame in step S30 to workpiece to be processed.
The thickness of chip is detected after etching, stops etching if meeting the requirements, if not yet reaching the thickness of requirement
Spend, then repeat step S40, until the thickness of final chip is met the requirements.
Above is the preferable of the utility model is implemented to be illustrated, but the invention is not limited to the reality
Example is applied, those skilled in the art can also make a variety of equivalent variations on the premise of without prejudice to the utility model spirit
Or replace, these equivalent deformations or replacement are all contained in the application claim limited range.
Claims (7)
- A kind of 1. plasma thinning device, it is characterised in that including first electrode, second electrode, inert gas feedway with Etching gas feedway, wherein, the first electrode is arranged in parallel with second electrode, described lazy therebetween with gap Property gas supply device be used to be passed through inert gas into the gap, it is described etc. to form plasma in the gap Gas ions are sprayed to outside the gap forms plasma flame, and the etching gas feedway is used for the plasma Etching gas are passed through in flame.
- 2. plasma thinning device according to claim 1, it is characterised in that the length of the plasma flame is more than 10mm。
- 3. plasma thinning device according to claim 1 or 2, it is characterised in that further include for carrying work to be processed The workbench of part, workbench described in the gap face.
- 4. plasma thinning device according to claim 3, it is characterised in that further include mobile module, the mobile mould Group is used to drive the relatively described first electrode of the workbench, second electrode movement, or the driving first electrode, the second electricity Extremely relatively described working table movement.
- 5. plasma thinning device according to claim 1 or 2, it is characterised in that the inert gas for helium or Argon gas.
- 6. plasma thinning device according to claim 1 or 2, it is characterised in that the etching gas are carbon tetrafluoride Or sulfur hexafluoride.
- 7. plasma thinning device according to claim 1 or 2, it is characterised in that by the inert gas feedway The inert gas purge ejected is located at the plasma in the gap to form the plasma flame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721215002.8U CN207282468U (en) | 2017-09-20 | 2017-09-20 | Plasma thinning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721215002.8U CN207282468U (en) | 2017-09-20 | 2017-09-20 | Plasma thinning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207282468U true CN207282468U (en) | 2018-04-27 |
Family
ID=61981701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721215002.8U Active CN207282468U (en) | 2017-09-20 | 2017-09-20 | Plasma thinning device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207282468U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731711A (en) * | 2017-09-20 | 2018-02-23 | 南方科技大学 | Plasma thinning device and method |
-
2017
- 2017-09-20 CN CN201721215002.8U patent/CN207282468U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731711A (en) * | 2017-09-20 | 2018-02-23 | 南方科技大学 | Plasma thinning device and method |
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