WO2021239023A1 - 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置 - Google Patents

一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置 Download PDF

Info

Publication number
WO2021239023A1
WO2021239023A1 PCT/CN2021/096196 CN2021096196W WO2021239023A1 WO 2021239023 A1 WO2021239023 A1 WO 2021239023A1 CN 2021096196 W CN2021096196 W CN 2021096196W WO 2021239023 A1 WO2021239023 A1 WO 2021239023A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistance wire
heating
faraday
faraday shielding
conductive
Prior art date
Application number
PCT/CN2021/096196
Other languages
English (en)
French (fr)
Inventor
郭颂
刘海洋
王铖熠
程实然
刘小波
张军
胡冬冬
许开东
Original Assignee
北京鲁汶半导体科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京鲁汶半导体科技有限公司 filed Critical 北京鲁汶半导体科技有限公司
Priority to KR1020227046050A priority Critical patent/KR20230017296A/ko
Priority to US17/927,876 priority patent/US20230207283A1/en
Priority to JP2022572444A priority patent/JP2023528330A/ja
Publication of WO2021239023A1 publication Critical patent/WO2021239023A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/262—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an insulated metal plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H05B2203/005—Heaters using a particular layout for the resistive material or resistive elements using multiple resistive elements or resistive zones isolated from each other

Definitions

  • This application belongs to the technical field of semiconductor etching, and in particular relates to a plasma etching system and a Faraday shielding device that can be used for heating.
  • the voltage between the different parts of the plasma coil is capacitively coupled to the plasma.
  • the capacitive coupling part can cause a local strengthening voltage in the reaction chamber, which may accelerate the ion from The plasma leaves to locally affect the dielectric window, causing local sputtering damage; in other cases, capacitive coupling may cause local deposition. Sputtering may cause damage to the surface coating on the dielectric window, and then particles may fall off and may land on the produced wafer causing defects.
  • the prior art adopts the plasma etching machine dielectric window heating technology as shown in Figure 1.
  • the main components shown are: radio frequency coil 001, dielectric window 002, heating net 004, heating fan 005, and outer shielding cover. 006.
  • the plasma generated by the radio frequency coil 001 passes through the dielectric window 002 for processing, and the heating net 004 generates heat, which is blown to the dielectric window 002 by the heating fan 005 in the direction indicated by the arrow in the schematic diagram for heating.
  • the main disadvantages of this method are: the fan sends heat and the heat is scattered, and the heating efficiency is low; on the other hand, the coil and other electrical components such as the matching device will be heated at the same time, resulting in high temperature and easy damage to the electrical components; to prevent the wind heat from dissipating.
  • the temperature is getting higher and higher, causing high-temperature damage to the operator, and an outer shielding cover 006 is also required, resulting in a complex structure, which not only takes up additional space but also increases costs.
  • heating the ceramic dielectric window can reduce the amount of product deposition, but some of the product is still deposited on the ceramic dielectric window. After a period of time, the deposit increases to a certain amount, which will still adversely affect the etching process. It is still necessary to disassemble the chamber, and further remove the ceramic medium window for manual cleaning.
  • each exemplary embodiment of the present application proposes a plasma etching system and a Faraday shielding device that can be used for heating.
  • the temperature is increased, and the dielectric window is heated to reduce the product.
  • the amount of deposition; and the heating efficiency is high, the heat loss is small, and the equipment structure is simplified.
  • This application proposes a heating Faraday shielding device of a plasma etching system, including a Faraday shielding plate; the Faraday shielding plate includes a conductive ring and a plurality of conductive petals radially symmetrically connected to the outer periphery of the conductive ring
  • the Faraday shielding device also includes a resistance wire attached to the lower end surface of the Faraday shield; the outer surface of the resistance wire is provided with an insulating and thermally conductive layer; during the etching process, the resistance wire is energized and heated.
  • the heating circuit for supplying power to the resistance wire; the heating circuit includes a heating power supply and a filter circuit unit; the output end of the heating power supply is filtered by the filter circuit unit and then connected to the resistance wire.
  • the feedback control circuit includes a temperature measurement sensor, a temperature controller, and a solid state relay; the solid state relay is arranged on the heating circuit and is used to control the opening and closing of the heating circuit; the temperature measurement sensor is used for The temperature of the resistance wire is measured and the data is sent to a temperature controller; the temperature controller controls the opening and closing of the solid state relay according to the set temperature and a feedback signal.
  • the pattern formed by the wiring of the resistance wire on the Faraday shield plate is an open curve.
  • the Faraday shielding plate is divided into a plurality of heating areas; each heating area includes a section of conductive ring and a plurality of conductive petals connected to the section of conductive ring; each heating area is provided with a resistance wire The one resistance wire is routed along the conductive ring in the heating area and each conductive petal in the heating area.
  • the resistance wire is routed along an arcuate path on the lower end surface of the conductive petal.
  • a wiring groove is provided on the lower end surface of the Faraday shielding plate; the resistance wire is embedded and arranged in the wiring groove.
  • a plasma etching system includes the above-mentioned Faraday shielding device that can be used for heating.
  • the plasma etching system further includes a dielectric window; the Faraday shield plate is sintered integrally in the dielectric window.
  • the heating circuit and the resistance wire are connected, the resistance wire and the Faraday shielding plate are energized, the temperature of the resistance wire and the Faraday shield plate is increased, the dielectric window is heated, and the deposition amount of the product is reduced; the outer surface of the resistance wire is provided with Insulating heat conduction layer, so while the resistance wire is insulated from the Faraday shielding plate, the Faraday shielding plate can be used as a heat sink to accelerate the heat diffusion of the resistance wire, improve the heating efficiency of the dielectric window, reduce heat loss, and simplify the device structure;
  • the Faraday shield is located between the radio frequency coil and the resistance wire to form a shield. On the one hand, it can effectively prevent the coupling between the radio frequency coil and the resistance wire, affecting the radio frequency of the radio frequency coil and the heating of the resistance wire; on the other hand, it can also prevent the resistance wire from interacting with the resistance wire.
  • the radio frequency coil generates discharge and burns the resistance wire;
  • the output terminal of the heating power supply is filtered by the filter circuit unit and connected to the Faraday shielding plate, effectively preventing the coupling between the radio frequency coil and the Faraday shielding plate and causing interference to the coil radio frequency and the heating current of the Faraday shielding plate.
  • FIG. 1 is a schematic diagram of a heating structure of a dielectric window of a plasma etching machine in the prior art
  • Figure 2 is a schematic diagram of the structure of the application
  • Figure 3 is a top view of the Faraday shield plate of the application.
  • Figure 5 is a partial enlarged view of the connection between the Faraday shield plate and the dielectric window of the application;
  • Figure 6 is a flow chart of the application process.
  • each exemplary embodiment of the present application proposes a plasma etching system including a reaction chamber 022, a radio frequency coil 001 and a bias electrode 020.
  • a dielectric window 002 is provided above the reaction chamber 022, and the radio frequency coil 001 is located above the dielectric window 002.
  • the radio frequency coil 001 is powered by an excitation radio frequency power supply 011, and is tuned by an excitation matching network 010.
  • the bias electrode 020 is located in the reaction chamber 022, and is powered by a bias radio frequency power supply 021 and tuned by a bias matching network 025.
  • the lower end of the reaction chamber 022 is also provided with a vacuum pump 024 and a pressure control valve 023 to maintain the required vacuum of the reaction chamber 022.
  • the plasma etching system further includes a gas source 012 for supplying process gas to the reaction chamber 022; the process gas enters the reaction chamber 022 through the dielectric window 002.
  • the plasma etching system further includes a Faraday shielding device that can be used for heating; the Faraday shielding device includes a Faraday shielding plate 009.
  • the Faraday shielding plate 009 includes a conductive ring 0092 and a plurality of conductive petals 0091 radially symmetrically connected to the outer periphery of the conductive ring 0092.
  • the Faraday shielding board 009 is also used as a shielding power supply by exciting the radio frequency power supply 011, tuned by the excitation matching network 010, and then supplying power.
  • the output terminal of the excitation matching network 010 can be connected to the radio frequency coil 001 or the Faraday shielding plate 009 through the three-phase switch 026.
  • the wafer is placed on the bias electrode 020.
  • a plasma treatment process reaction gas such as fluorine
  • the specific pressure of the reaction chamber 022 is maintained by the pressure control valve 023 and the vacuum pump 024.
  • the excitation radio frequency power supply 011 is tuned by an excitation matching network 010, and supplies power to the radio frequency coil 001 through a three-phase switch 026, generates plasma in the reaction chamber 022 through inductive coupling, and performs a plasma treatment process on the wafer.
  • the radio frequency power input is stopped, and the plasma treatment process reaction gas input is stopped.
  • the substrate sheet is placed on the bias electrode 020.
  • the cleaning process reaction gas such as argon, oxygen, and nitrogen trifluoride, is introduced into the reaction chamber 022 through the gas source 012.
  • the specific pressure of the reaction chamber 022 is maintained by the pressure control valve 023 and the vacuum pump 024.
  • the excitation radio frequency power supply 011 is tuned by the excitation matching network 010, and power is supplied to the Faraday shielding plate 009 through the three-phase switch 026.
  • the power from the Faraday shielding plate 009 generates argon ions, etc., which are sputtered onto the inner wall of the dielectric window 002 to clean the dielectric window 002.
  • the radio frequency power input is stopped, and the cleaning process reaction gas input is stopped.
  • the Faraday shielding device also includes a resistance wire 003 and a heating circuit attached to the lower end surface of the Faraday shielding plate.
  • the lower end surface of the Faraday shield plate is provided with a wiring groove; the resistance wire 003 is embedded in the wiring groove, which can save space.
  • the heating circuit includes a heating power supply 015. When the heating power supply 015 is used in the etching process, the resistance wire 003 is energized and heated.
  • the outer surface of the resistance wire 003 is provided with an insulating and thermally conductive layer 0031, so while the resistance wire 003 is insulated from the Faraday shielding plate 009, the Faraday shielding plate 009 can be used as a heat sink to accelerate the heat diffusion of the resistance wire 003 and improve the dielectric window 002 heating efficiency.
  • the etching reaction gas is introduced into the reaction chamber 022, and the RF power supply 011 is excited to be connected to the RF coil 001 to generate plasma to etch the substrate sheet; at the same time, the heating circuit and the resistance wire 003 are connected to make The resistance wire 003 and the Faraday shielding plate 009 are energized and the temperature rises, heating the dielectric window 002, reducing the amount of product deposition; in this embodiment, the Faraday shielding plate 009 is sintered in the dielectric window 002 as a whole to improve heating efficiency.
  • the heating circuit and the resistance wire 003 are turned off; the cleaning reaction gas is introduced into the reaction chamber 022, and the Faraday shielding plate 009 is connected to the shielding power source to clean the dielectric window 002.
  • the excitation radio frequency power supply 011 is tuned through the excitation matching network 010, and power is supplied to the radio frequency coil 001 through the three-phase switch 026.
  • the Faraday shielding plate 009 is located between the radio frequency coil 001 and the resistance wire 003 to form a shield. On the one hand, it can effectively prevent the coupling between the radio frequency coil 001 and the resistance wire 003, affecting the radio frequency of the radio frequency coil 001 and the heating of the resistance wire 003; on the other hand, , It can also prevent the resistance wire 003 and the radio frequency coil 001 from discharging and burning the resistance wire 003.
  • the heating circuit of the present application further includes a filter circuit unit 030.
  • the output terminal of the heating power supply 015 is filtered by the filter circuit unit 030 and then connected to the Faraday shielding plate 009, effectively preventing the coupling between the radio frequency coil 001 and the Faraday shielding plate 009.
  • the plasma etching system also includes a feedback control circuit; the feedback control circuit includes a temperature sensor 016, a temperature controller 013, and a solid state relay 014; the solid state relay 014 is arranged on the heating circuit for controlling the heating circuit to start Closed;
  • the temperature sensor 016 is used to measure the temperature of the resistance wire 003 and send data to the temperature controller 013;
  • the temperature controller 013 controls the opening and closing of the solid state relay 014 according to the set temperature and a feedback signal.
  • the feedback signal is disconnected through the solid state relay 014 control circuit; when the temperature of the resistance wire 003 drops below the set low temperature, the temperature sensor 016 detects the temperature drop and then transmits the data to Temperature controller 013, feedback signal again through solid state relay 014 control circuit to close for heating. Therefore, the feedback control circuit keeps the resistance wire 003 at an appropriate temperature.
  • two sets of temperature measuring sensors 016 and temperature controller 013 can be set up to control solid state relay 014 in parallel, which can prevent the temperature measuring sensor 016 or temperature controller 013 from being damaged, causing control failure and damaging the equipment; two sets of temperature measuring sensors 016 can measure the different positions of resistance wire 003 to prevent the temperature of resistance wire 003 from being unbalanced, and the local temperature is too high or too low.
  • a filter circuit unit 030 is also provided on the feedback control circuit.
  • the resistance wire 003 is wired on the lower end surface of the Faraday shielding plate 009 to form a closed loop, it will shield the radio frequency of the radio frequency coil 001. Therefore, the pattern formed by wiring the resistance wire 003 on the Faraday shielding plate 009 is an open curve.
  • the preferred wiring method is: the Faraday shielding plate 009 is divided into a number of heating areas; each heating area includes a section of conductive ring 0092 and a number of conductive petals 0091 connected to the section of conductive ring 0092 correspondingly; Each heating area is provided with a resistance wire 003; the resistance wire 003 is routed along the conductive ring 0092 in the heating area and each conductive petal 0091 in the heating area. In this embodiment, it is divided into two heating areas.
  • the resistance wire 003 is routed along an arcuate path on the lower end surface of the conductive petal 0091.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置，法拉第屏蔽装置包括法拉第屏蔽板（009）和贴置在法拉第屏蔽板（009）下端面的电阻丝（003）；法拉第屏蔽板（009）包括导电环（0092）和多个辐射对称连接在导电环（0092）外周的导电瓣状件（0091）；电阻丝（003）的外表面设置有绝缘导热层（0031）；刻蚀工艺时，电阻丝（003）通电加热。当刻蚀工艺时，导通加热电路与电阻丝（003），使电阻丝（003）通电温度升高，加热介质窗（002），减少产物的沉积量；由于电阻丝（003）与介质窗（002）直接接触，加热效率高，热量散失少，简化了设备结构；法拉第屏蔽板（009）位于射频线圈（001）与电阻丝（003）之间形成屏蔽，可防止射频线圈（001）与电阻丝（003）之间产生耦合及放电；加热电源（015）的输出端经滤波电路单元（030）滤波后，连接至电阻丝（003），防止射频线圈（001）与电阻丝（003）之间产生耦合。

Description

一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置
相关申请
本申请要求于2020年5月28日提交中国专利局、申请号为202020935350.8、申请名称为“一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于半导体刻蚀技术领域，尤其涉及一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置。
背景技术
在刻蚀工艺中，等离子体线圈的不同部分之间的电压电容耦合到等离子体，虽然这种耦合促进点火和稳定，但电容耦合部分可在反应腔室引起局部加强电压，这可能加速离子从等离子体离开以局部的影响介质窗，导致局部溅射损害；在其他情况下，电容耦合可能导致局部沉积。溅射可能导致介质窗上的表面涂层损坏，然后颗粒可脱落并可能降落在生产的晶片上导致缺陷。
为解决上述问题，现有技术采用如图1的等离子体刻蚀机介质窗加热技术，所示主要组成部分为，射频线圈001，介质窗002，加热网004，送热风扇005，外屏蔽罩006。射频线圈001产生等离子体穿过介质窗002进行工艺，加热网004产生热量，经所述送热风扇005按示意图箭头所示方向吹送至所述介质窗002进行加热。此方法的缺点主要有：风扇送热热量四散，加热效率低；另一方面会同时对线圈及其他电器元件如匹配器等同时进行加热，造成电器件高温而易损；为防止风热四散而温度越来越高，对操作者产生高温伤害，还需要外屏蔽罩006，造成结构复杂，既占用额外空间又会增加成本。
另外，对陶瓷介质窗加热，虽然能减少产物的沉积量，但还是有部分产物沉积到陶瓷介质窗上，一段时间后沉积物增多到一定量，仍然会对刻蚀工艺产生不利影响，这样的话还是需要对腔室进行拆卸，进一步地将陶瓷介质窗拆掉进行人工清洗。
发明内容
为解决上述问题，本申请各示例性实施例提出一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置，通过对直接接触介质窗的电阻丝通电温度升高，加热介质窗，减少产物的沉积量；且加热效率高，热量散失少，简化了设备结构。
技术方案：本申请提出一种等离子体刻蚀系统的可用于加热的法拉第屏蔽装置，包括法拉第屏蔽板；所述法拉第屏蔽板包括导电环和多个辐射对称连接在导电环外周的导电瓣状件；所述法拉第屏蔽装置还包括贴置在法拉第屏蔽板下端面的电阻丝；所述电阻丝的外表面设置有绝缘导热层；刻蚀工艺时，所述电阻丝通电加热。
进一步，还包括用于为电阻丝供电的加热电路；所述加热电路包括加热电源和滤波电路单元；所述加热电源的输出端经滤波电路单元滤波后，连接至电阻丝。
进一步，还包括反馈控制电路；所述反馈控制电路包括测温传感器、温度控制器和固态继电器；所述固态继电器设置在加热电路上，用于控制加热电路启闭；所述测温传感器用于测量电阻丝温度，传送数据至温度控制器；所述温度控制器根据设定温度，反馈信号控制固态继电器的启闭。
进一步，所述电阻丝在法拉第屏蔽板上布线形成的图形是开放曲线。
进一步，所述法拉第屏蔽板分为若干个加热区域；每个所述加热区域包括一段导电环以及对应连接在该段导电环上的若干个导电瓣状件；每个加热区域设置有一根电阻丝；所述一根电阻丝沿所述加热区域内的导电环以及所述加热区域内的每一个导电瓣状件布线。
进一步，所述电阻丝在导电瓣状件的下端面沿弓形路径布线。
进一步，所述法拉第屏蔽板的下端面设置有布线槽；所述电阻丝嵌入设置在布线槽内。
一种等离子体刻蚀系统，包括上述的可用于加热的法拉第屏蔽装置。
进一步，所述等离子体刻蚀系统还包括介质窗；所述法拉第屏蔽板一体烧结在介质窗内。
有益效果：本申请当刻蚀工艺时，导通加热电路与电阻丝，使电阻丝及法拉第屏蔽板通电温度升高，加热介质窗，减少产物的沉积量；所述电阻丝的外表面设置有绝缘导热层，因此电阻丝与法拉第屏蔽板保持绝缘的同时，法拉第屏蔽板可作为散热片，使电阻丝的热量加速扩散，提升介质窗的加热效率，热量散失少，简化了设备结构；
当清洗工艺时，关闭加热电路与法拉第屏蔽板，法拉第屏蔽板接入屏蔽电源，对介质窗进行清洗；
法拉第屏蔽板位于射频线圈与电阻丝之间形成屏蔽，一方面可有效防止射频线圈与电阻丝之间产生耦合，影响射频线圈的射频以及电阻丝的发热；另一方面，还可防止电阻丝与射频线圈产生放电，烧毁电阻丝；
所述加热电源的输出端经滤波电路单元滤波后，连接至法拉第屏蔽板，有效防止射频线圈与 法拉第屏蔽板之间耦合，而对线圈射频及法拉第屏蔽板加热电流产生干扰。
附图说明
图1为现有技术的等离子体刻蚀机介质窗加热结构的示意图；
图2为本申请的结构示意图；
图3为本申请的法拉第屏蔽板的俯视图；
图4为本申请的法拉第屏蔽板的俯视图的局部放大图；
图5为本申请的法拉第屏蔽板与介质窗连接处的局部放大图；
图6为本申请的使用工艺流程图。
具体实施方式
如图2，本申请各示例性实施例提出一种等离子体刻蚀系统包括反应腔室022、射频线圈001和偏置电极020。
所述反应腔室022的上方设置有介质窗002，所述射频线圈001位于介质窗002上方。所述射频线圈001通过激励射频电源011，经激励匹配网络010调谐后供电。
所述偏置电极020位于反应腔室022内，通过偏置射频电源021，经偏置匹配网络025调谐后供电。
所述反应腔室022的下端还设置有真空泵024和压力控制阀023，用于维持反应腔室022所需的真空度。
所述等离子体刻蚀系统还包括气体源012，用于向反应腔室022提供工艺气体；所述工艺气体由介质窗002进入反应腔室022。
如图3，所述等离子体刻蚀系统还包括可用于加热的法拉第屏蔽装置；所述法拉第屏蔽装置包括法拉第屏蔽板009。所述法拉第屏蔽板009包括导电环0092和多个辐射对称连接在导电环0092外周的导电瓣状件0091。本实施例中，所述法拉第屏蔽板009也通过激励射频电源011，经激励匹配网络010调谐后供电，用作屏蔽电源。激励匹配网络010的输出端通过三相开关026，可连接射频线圈001或法拉第屏蔽板009。
在进行刻蚀工艺时，将晶圆片置于偏置电极020上。通过气体源012向反应腔室022中通入等离子体处理工艺反应气体，例如氟。通过压力控制阀023和真空泵024维持反应腔室022的特定压力。激励射频电源011通过激励匹配网络010调谐，通过三相开关026供电到射频线圈001，通过电感耦合在反应腔室022中产生等离子体，对晶圆片进行等离子体处理工艺。待等离子体处理工艺完成，停止射频功率输入，并停止等离子体处理工艺反应气体输入。
当需要进行清洗工艺时，将衬底片置于偏置电极020上。通过气体源012向反应腔室022中通入清洗工艺反应气体，例如氩气、氧气和三氟化氮。通过压力控制阀023和真空泵024维持反应腔室022的特定压力。激励射频电源011通过激励匹配网络010调谐，通过三相开关026供电到位于法拉第屏蔽板009中。来自法拉第屏蔽板009的功率，产生氩离子等，溅射到介质窗002的内壁，对介质窗002进行清洗。待清洗工艺完成，停止射频功率输入，停止清洗工艺反应气体输入。
所述法拉第屏蔽装置还包括贴置在法拉第屏蔽板下端面的电阻丝003和加热电路。本实施例中，所述法拉第屏蔽板的下端面设置有布线槽；所述电阻丝003嵌入设置在布线槽内，可节省空间。所述加热电路包括加热电源015，加热电源015用于刻蚀工艺时，通电加热电阻丝003。所述电阻丝003的外表面设置有绝缘导热层0031，因此电阻丝003与法拉第屏蔽板009保持绝缘的同时，法拉第屏蔽板009可作为散热片，使电阻丝003的热量加速扩散，提升介质窗002的加热效率。
如图4，具体的使用方法是：
当刻蚀工艺时，向反应腔室022通入刻蚀反应气体，激励射频电源011与射频线圈001接通，产生等离子体对衬底片进行刻蚀；同时导通加热电路与电阻丝003，使电阻丝003及法拉第屏蔽板009通电温度升高，加热介质窗002，减少产物的沉积量；本实施例中，所述法拉第屏蔽板009一体烧结在介质窗002内，提高加热效率。
当清洗工艺时，关闭加热电路与电阻丝003；向反应腔室022通入清洗反应气体，且法拉第屏蔽板009接入屏蔽电源，对介质窗002进行清洗。
刻蚀工艺时，激励射频电源011通过激励匹配网络010调谐，通过三相开关026供电到射频线圈001。法拉第屏蔽板009位于射频线圈001与电阻丝003之间形成屏蔽，一方面可有效防止射频线圈001与电阻丝003之间产生耦合，影响射频线圈001的射频以及电阻丝003的发热；另一方面，还可防止电阻丝003与射频线圈001产生放电，烧毁电阻丝003。
本申请的加热电路还包括滤波电路单元030。所述加热电源015的输出端经滤波电路单元030滤波后，连接至法拉第屏蔽板009，有效防止射频线圈001与法拉第屏蔽板009之间产生耦合。
所述等离子体刻蚀系统还包括反馈控制电路；所述反馈控制电路包括测温传感器016、温度控制器013和固态继电器014；所述固态继电器014设置在加热电路上，用于控制加热电路启闭；所述测温传感器016用于测量电阻丝003温度，传送数据至温度控制器013；所述温度控制器013根据设定温度，反馈信号控制固态继电器014的启闭。当电阻丝003达到 温度控制器013设定高温后反馈信号通过固态继电器014控制电路断开；当电阻丝003的温度下降低于设定低温时，测温传感器016检测到温度下降再传送数据给温度控制器013，再次反馈信号通过固态继电器014控制电路闭合进行加热。从而反馈控制电路使电阻丝003保持适当温度。为保险起见，可以设置两组测温传感器016及温度控制器013，并联控制固态继电器014，可防止因测温传感器016或温度控制器013损坏，造成控制失效，损坏设备；两组测温传感器016可以测量电阻丝003不同的位置，防止电阻丝003温度不均衡，局部温度过高或过低。
为防止刻蚀工艺时，反馈控制电路与射频线圈001耦合，反馈控制电路上也设置有滤波电路单元030。
如果电阻丝003在法拉第屏蔽板009的下端面布线形成封闭环的话，就会对射频线圈001的射频产生屏蔽，因此所述电阻丝003在法拉第屏蔽板009上布线形成的图形是开放曲线。
优选的布线方式是：所述法拉第屏蔽板009分为若干个加热区域；每个所述加热区域包括一段导电环0092以及对应连接在该段导电环0092上的若干个导电瓣状件0091；每个加热区域设置有一根电阻丝003；所述一根电阻丝003沿所述加热区域内的导电环0092以及所述加热区域内的每一个导电瓣状件0091布线。本实施例中分为两个加热区域。
为了使加热更加均匀，所述电阻丝003在导电瓣状件0091的下端面沿弓形路径布线。

Claims (9)

  1. 一种等离子体刻蚀系统的可用于加热的法拉第屏蔽装置，包括法拉第屏蔽板，所述法拉第屏蔽板包括导电环和多个辐射对称连接在导电环外周的导电瓣状件，其中，所述法拉第屏蔽装置还包括贴置在所述法拉第屏蔽板下端面的电阻丝，所述电阻丝的外表面设置有绝缘导热层，刻蚀工艺时，所述电阻丝通电加热。
  2. 根据权利要求1所述的法拉第屏蔽装置，其中，所述法拉第屏蔽装置还包括用于为所述电阻丝供电的加热电路；所述加热电路包括加热电源和滤波电路单元；所述加热电源的输出端经所述滤波电路单元滤波后，连接至所述电阻丝。
  3. 根据权利要求2所述的法拉第屏蔽装置，其中，所述法拉第屏蔽装置还包括反馈控制电路；所述反馈控制电路包括测温传感器、温度控制器和固态继电器；所述固态继电器设置在所述加热电路上，用于控制所述加热电路启闭；所述测温传感器用于测量所述电阻丝的温度，传送数据至所述温度控制器；所述温度控制器根据设定温度，反馈信号控制所述固态继电器的启闭。
  4. 根据权利要求1-3任意一项所述的法拉第屏蔽装置，其中，所述电阻丝在所述法拉第屏蔽板上布线形成的图形是开放曲线。
  5. 根据权利要求4所述的法拉第屏蔽装置，其中，所述法拉第屏蔽板分为若干个加热区域；每个所述加热区域包括一段导电环以及对应连接在所述一段导电环上的若干个导电瓣状件；每个加热区域设置有一根电阻丝；所述一根电阻丝沿所述加热区域内的所述导电环以及所述加热区域内的每一个导电瓣状件布线。
  6. 根据权利要求5所述的法拉第屏蔽装置，其中，所述电阻丝在导电瓣状件的下端面沿弓形路径布线。
  7. 根据权利要求1所述的法拉第屏蔽装置，其中，所述法拉第屏蔽板的下端面设置有布线槽；所述电阻丝嵌入设置在所述布线槽内。
  8. 一种等离子体刻蚀系统，其中，所述等离子体刻蚀系统包括权利要求1-7任意一项所述的可用于加热的法拉第屏蔽装置。
  9. 根据权利要求8所述的等离子体刻蚀系统，其中，所述等离子体刻蚀系统还包括介质窗；所述法拉第屏蔽板一体烧结在所述介质窗内。
PCT/CN2021/096196 2020-05-28 2021-05-27 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置 WO2021239023A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020227046050A KR20230017296A (ko) 2020-05-28 2021-05-27 플라즈마 에칭 시스템, 및 가열을 위하여 이용될 수 있는 패러데이 차폐 장치
US17/927,876 US20230207283A1 (en) 2020-05-28 2021-05-27 Plasma etching system and faraday shielding apparatus which can be used for heating
JP2022572444A JP2023528330A (ja) 2020-05-28 2021-05-27 プラズマエッチングシステムおよびその加熱に使用可能なファラデーシールド装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202020935350.8U CN211957596U (zh) 2020-05-28 2020-05-28 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置
CN202020935350.8 2020-05-28

Publications (1)

Publication Number Publication Date
WO2021239023A1 true WO2021239023A1 (zh) 2021-12-02

Family

ID=73171715

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/096196 WO2021239023A1 (zh) 2020-05-28 2021-05-27 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置

Country Status (5)

Country Link
US (1) US20230207283A1 (zh)
JP (1) JP2023528330A (zh)
KR (1) KR20230017296A (zh)
CN (1) CN211957596U (zh)
WO (1) WO2021239023A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024078063A1 (zh) * 2022-10-14 2024-04-18 江苏鲁汶仪器股份有限公司 等离子体刻蚀设备、介质窗加热装置及系统

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113745084A (zh) * 2020-05-28 2021-12-03 北京鲁汶半导体科技有限公司 一种法拉第屏蔽装置、等离子体刻蚀系统及其使用方法
CN211957596U (zh) * 2020-05-28 2020-11-17 北京鲁汶半导体科技有限公司 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置
CN115513025A (zh) * 2021-06-23 2022-12-23 北京鲁汶半导体科技有限公司 一种等离子刻蚀机的激励射频系统
TWI825711B (zh) * 2021-06-25 2023-12-11 美商得昇科技股份有限公司 電漿處理設備

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020100557A1 (en) * 2001-01-29 2002-08-01 Applied Materials, Inc. ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window
US7223321B1 (en) * 2002-08-30 2007-05-29 Lam Research Corporation Faraday shield disposed within an inductively coupled plasma etching apparatus
CN104717817A (zh) * 2013-12-12 2015-06-17 中微半导体设备(上海)有限公司 一种用于电感耦合型等离子处理器射频窗口的加热装置
US20150191823A1 (en) * 2014-01-06 2015-07-09 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized rf shield for plasma profile control
CN105742204A (zh) * 2014-12-10 2016-07-06 中微半导体设备(上海)有限公司 用于等离子处理装置的加热器
CN110301030A (zh) * 2017-02-20 2019-10-01 马特森技术有限公司 利用耦接到法拉第屏蔽体的温度控制元件的温度控制
CN110416053A (zh) * 2019-07-30 2019-11-05 江苏鲁汶仪器有限公司 一种电感耦合等离子体处理系统
CN211957596U (zh) * 2020-05-28 2020-11-17 北京鲁汶半导体科技有限公司 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020100557A1 (en) * 2001-01-29 2002-08-01 Applied Materials, Inc. ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window
US7223321B1 (en) * 2002-08-30 2007-05-29 Lam Research Corporation Faraday shield disposed within an inductively coupled plasma etching apparatus
CN104717817A (zh) * 2013-12-12 2015-06-17 中微半导体设备(上海)有限公司 一种用于电感耦合型等离子处理器射频窗口的加热装置
US20150191823A1 (en) * 2014-01-06 2015-07-09 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized rf shield for plasma profile control
CN105742204A (zh) * 2014-12-10 2016-07-06 中微半导体设备(上海)有限公司 用于等离子处理装置的加热器
CN110301030A (zh) * 2017-02-20 2019-10-01 马特森技术有限公司 利用耦接到法拉第屏蔽体的温度控制元件的温度控制
CN110416053A (zh) * 2019-07-30 2019-11-05 江苏鲁汶仪器有限公司 一种电感耦合等离子体处理系统
CN211957596U (zh) * 2020-05-28 2020-11-17 北京鲁汶半导体科技有限公司 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024078063A1 (zh) * 2022-10-14 2024-04-18 江苏鲁汶仪器股份有限公司 等离子体刻蚀设备、介质窗加热装置及系统

Also Published As

Publication number Publication date
TW202211281A (zh) 2022-03-16
CN211957596U (zh) 2020-11-17
JP2023528330A (ja) 2023-07-04
KR20230017296A (ko) 2023-02-03
US20230207283A1 (en) 2023-06-29

Similar Documents

Publication Publication Date Title
WO2021239023A1 (zh) 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置
WO2021239025A1 (zh) 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置
US5589041A (en) Plasma sputter etching system with reduced particle contamination
CN108511313B (zh) 等离子处理装置以及试料台
TWI584699B (zh) Plasma processing device and plasma processing method
JP4129855B2 (ja) プラズマ処理装置
TWI390605B (zh) Processing device
JP7364288B2 (ja) 誘導結合プラズマ処理システム
KR100598631B1 (ko) 임피던스가 감소된 챔버
TW202106121A (zh) 具有法拉第遮罩裝置的電漿處理系統
KR20210111269A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
TWI420589B (zh) Plasma processing device
CN100414672C (zh) 等离子体处理方法及等离子体处理装置
KR102189323B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR20120137426A (ko) 스퍼터링 장치 및 스퍼터링 방법
JP2005344169A (ja) プラズマｃｖｄ装置
TW202230980A (zh) 配線異常之檢測方法及電漿處理裝置
JP6938746B1 (ja) エッチング装置及びエッチング方法
CN113745084A (zh) 一种法拉第屏蔽装置、等离子体刻蚀系统及其使用方法
JPH08293486A (ja) 真空処理方法及び装置
TW202207305A (zh) 電漿處理裝置及電漿處理方法
CN113745085A (zh) 一种法拉第屏蔽装置、等离子体刻蚀系统及其使用方法
TWI825527B (zh) 電漿蝕刻機以及電漿蝕刻機的激勵射頻系統
TWI416998B (zh) Plasma processing device
JP2003318162A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21813734

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2022572444

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20227046050

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 17/04/2023)

122 Ep: pct application non-entry in european phase

Ref document number: 21813734

Country of ref document: EP

Kind code of ref document: A1