WO2021235435A1 - Electrically conductive particle, and electrically conductive material and connection structure obtained using same - Google Patents
Electrically conductive particle, and electrically conductive material and connection structure obtained using same Download PDFInfo
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- WO2021235435A1 WO2021235435A1 PCT/JP2021/018786 JP2021018786W WO2021235435A1 WO 2021235435 A1 WO2021235435 A1 WO 2021235435A1 JP 2021018786 W JP2021018786 W JP 2021018786W WO 2021235435 A1 WO2021235435 A1 WO 2021235435A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/18—Non-metallic particles coated with metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
- C23C18/1692—Heat-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
- H01R13/035—Plated dielectric material
Definitions
- the present invention relates to conductive particles, a conductive material containing the conductive particles, and a connection structure using the same.
- the conductive particles used as the conductive material of the anisotropic conductive material such as the anisotropic conductive film and the anisotropic conductive paste, those in which a conductive layer made of metal is formed on the surface of the core material particles are generally known. This conductive layer provides an electrical connection between the electrodes and wiring.
- Nickel plating film by electroless plating method is often used as the conductive layer of these conductive particles, but various measures have been taken to develop the desired characteristics.
- Patent Document 1 describes treating the surface of conductive particles with a treatment liquid containing a radically polymerizable compound, an acidic compound and water in order to obtain conductive particles having excellent storage stability. It is described that a uniform resin film is formed on the surface of the conductive particles to suppress the activity of the conductive layer.
- Patent Document 2 describes that a coated conductive particle having excellent storage stability and the like is provided by a conductive particle provided with an organometallic complex that covers at least a part of the surface of the conductive particle.
- Patent Document 3 describes conductive particles in which a phosphorus-containing hydrophobic group is introduced on the surface of a conductive layer. It is said that this can suppress the oxidation of the conductive layer and improve the corrosion resistance.
- Patent Document 4 describes, in a conductive layer containing nickel, phosphorus and tungsten, conductive particles containing phosphorus in a region inside the thickness of the conductive layer and tungsten in a region outside the thickness in a specific range. .. It has been reported that this makes it difficult for corrosion to proceed even when exposed to the presence of acid. In these patent documents, an attempt is made to impart corrosion resistance by modifying the conductive layer.
- the storage stability of the conductive particles can be achieved by suppressing the deterioration of the surface of the conductive layer such as the oxidation of the metal.
- protection is performed, when an anisotropic conductive material such as an anisotropic conductive film or an anisotropic conductive paste is used, the connection resistance increases due to the protection of the surface of the conductive layer. It was a problem to get rid of it. Therefore, an object of the present invention is to provide conductive particles having excellent storage stability, excellent corrosion resistance and low connection resistance.
- the present inventors are excellent in storage stability and corrosion resistance when the specific element present on the surface layer of the conductive layer composed of the nickel plating layer is present in a constant ratio with respect to the total amount of nickel and phosphorus or boron. And completed the present invention.
- a nickel plating layer as a conductive layer is formed on the surface of the core material particles, within 5 nm in the depth direction from the surface of the conductive layer measured by a scanning Auger electron spectroscopic analyzer.
- the molar ratio of carbon to the total of nickel and phosphorus (C / (Ni + P)) or the molar ratio of carbon to the total of nickel and boron (C / (Ni + B)) is 0.0002 or more and 1.65 or less, and nickel.
- the molar ratio of oxygen to the total of nickel and phosphorus (O / (Ni + P)) or the molar ratio of oxygen to the total of nickel and boron (O / (Ni + B)) is 0.0001 or more and 2.0 or less, and nickel. It provides conductive particles in which the molar ratio of phosphorus to nickel (P / Ni) or the molar ratio of boron to nickel (B / Ni) is 0.003 or more and 0.7 or less.
- the conductive layer is measured by a flight time type secondary ion mass spectrometer (TOF-SIMS).
- TOF-SIMS flight time type secondary ion mass spectrometer
- the count intensity of CH 4 N + positive ions (CH 4 N + / Ni + ) with respect to the count intensity of Ni + positive ions within 1 nm in the depth direction from the surface is 0.1 or less, or Ni ⁇ negative ions.
- C 2 H 3 O 2 - negative ion count strength C 2 H 3 O 2 - / Ni -
- Ni - PO of relative counts the intensity of the negative-ion - negative ion count strength (PO 2 - / Ni -) or is 10.0 or less
- the present invention also provides a method for producing conductive particles, which comprises a step of heating the conductive particles obtained by forming a conductive layer on the surface of the core material particles at a temperature of 200 to 600 ° C. under a vacuum of 1000 Pa or less. It is something to do.
- FIG. 1 is an SEM image of the conductive particles obtained in Example 1.
- FIG. 2 is an SEM image of the conductive particles obtained in Example 4.
- the conductive particles of the present invention have a nickel plating layer as a conductive layer formed on the surface of the core material particles, and the molar ratio of carbon to the total of nickel and phosphorus within 5 nm from the surface of the conductive layer (C /).
- (Ni + P)) or the molar ratio of carbon to the total of nickel and boron (C / (Ni + B)) is 0.0002 or more and 1.65 or less, preferably 0.0005 or more and 1.55 or less, and nickel and phosphorus.
- the molar ratio of oxygen to the total (O / (Ni + P)) or the molar ratio of oxygen to the total of nickel and boron (O / (Ni + B)) is 0.0001 or more and 2.0 or less, preferably 0.0003 or more. 8 or less, and the molar ratio of phosphorus to nickel (P / Ni) or the molar ratio of boron to nickel (P / Ni) is 0.003 or more and 0.7 or less, preferably 0.005 or more and 0.5. Is.
- the molar ratio of each of the above elements is carbon, oxygen, nickel and carbon, oxygen, nickel within 5 nm from the surface of the conductive layer using a scanning Auger electron spectroscopic analyzer (hereinafter, also referred to as an AES analyzer).
- AES analyzer a scanning Auger electron spectroscopic analyzer
- the atomic% of phosphorus or boron was measured, and the measured values of each element of carbon and oxygen with respect to the total measured values of nickel and phosphorus or nickel and boron were calculated, and the measured values of phosphorus or boron with respect to the measured values of nickel were calculated.
- the AES analyzer for example, PHI-710 manufactured by ULVAC-PHI Co., Ltd. can be used.
- the crystal structure portion becomes too large and corrosion occurs. Since it becomes a starting point, storage stability deteriorates, and if the upper limit of the above range is exceeded, the number of amorphous structural portions becomes too large and the connection resistance becomes high.
- the conductive particles of the present invention have a nickel-plated layer as a conductive layer formed on the surface of the core material particles, and are a flight time type secondary ion mass spectrometer (hereinafter, also referred to as TOF-SIMS).
- the count intensity of CH 4 N + positive ions (CH 4 N + / Ni + ) with respect to the count intensity of Ni + positive ions within 1 nm from the surface of the conductive layer measured by is 0.1 or less, preferably 0. 05 or less either, Ni - C 2 H 3 O 2 for counting the strength of the negative ion - negative ion count strength of (C 2 H 3 O 2 - / Ni -) 10.0 or less, preferably 9.
- TOF-SIMS for example, TOF-SIMS5 type manufactured by ION-TOF can be used.
- Ni + CH 4 N + of positive ions count intensity for counting the strength of the positive ions (CH 4 N + / Ni + ), Ni - C 2 H 3 O 2 for counting the strength of the negative ion - counts of negative ions Intensity (C 2 H 3 O 2 ⁇ / Ni ⁇ ), PO 2 ⁇ negative ion count intensity relative to Ni ⁇ negative ion count intensity (PO 2 ⁇ / Ni ⁇ ), or Ni ⁇ negative ion count intensity and B 3 O 6 H 4 - - negative ion count strength ((B 2 O 4 H 3 - + B 3 O 6 H 4 -) / Ni -) B 2 O 4 H 3 for the is less than the above range This is preferable because corrosion is suppressed and the connection resistance after pressure connection is low. On the contrary, if it exceeds the above range, the conductive layer is likely to be corroded, which affects the connection reliability after the pressure connection.
- the CH 4 N + is a positive ion from amine compounds
- the C 2 H 3 O 2 - is a negative ion derived from the organic acid
- the PO 2 - the negative ions from phosphoric acid compound
- the B 2 O 4 H 3 - and B 3 O 6 H 4 - is a negative ion derived from boric acid compound.
- the amine compound, the organic acid, the phosphoric acid compound, and the boric acid compound are complexing agents and dispersants contained in the electroless plating solution when the method for producing conductive particles of the present invention described later is carried out.
- the complexing agent is an effective component for preventing the precipitation of nickel compounds such as nickel hydroxide by forming a stable complex with nickel ions, and further for accelerating the precipitation reaction of nickel at an appropriate rate.
- various complexing agents used in known electroless nickel plating solutions can be used. Specific examples of such complexing agents include monocarboxylic acids such as acetic acid, propionic acid and butyric acid and their soluble salts, dicarboxylic acids such as oxalic acid and adipic acid and their soluble salts, and oxycarboxylic acids such as malic acid and tartrate acid.
- Acids and soluble salts thereof aminocarboxylic acids such as glycine and alanine and soluble salts thereof, ethylenediamine tetraacetic acid, versenol (N-hydroxyethylethylenediamine-N, N', N'-triacetic acid), quadrol (N, N, N', N'-Tetrahydroxyethylethylenediamine) and other ethylenediamine derivatives and their soluble salts, 1-hydroxyethane-1,1-diphosphonic acid, ethylenediaminetetramethylenephosphonic acid and other phosphonic acids and their soluble salts, pyrophosphates and their salts. Soluble salts and the like can be mentioned. These complexing agents can be used alone or in admixture of two or more.
- amine compound examples include aliphatic amines such as methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, triethanolamine, N, N-diisopropylethylamine, tetramethylethylenediamine and hexamethylenediamine, and phenylamine.
- Aromatic amines such as benzylamine, N-phenylhydroxylamine, hydroxylamines such as O-methylhydroxylamine, O-carboxyhydroxylamine, and pyrrole, pyrazole, imidazole, pyridine, oxazole, thiazole, benzothiazole.
- Triazole Triazole, benzotriazole and other heterocyclic amines and their alkali metal salts, alanine, arginine, glutamine, glutamic acid, glycine, leucine, phenylalanine, cystine, histidine, glutathione, methionine, asparagine, aspartic acid, etc. Will be.
- organic acid examples include saturated fatty carboxylic acids such as formic acid, acetic acid, propionic acid, butyric acid, valeric acid, lauric acid, tridecyl acid, partiminic acid and stearic acid, and alkali metal salts thereof, acrylic acid, methacrylic acid and oleic acid. , Linol acid, ⁇ -linolenic acid, and other unsaturated fatty carboxylic acids and alkali metal salts thereof, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, and other saturated dicarboxylic acids and alkali metal salts thereof, maleic acid.
- saturated fatty carboxylic acids such as formic acid, acetic acid, propionic acid, butyric acid, valeric acid, lauric acid, tridecyl acid, partiminic acid and stearic acid, and alkali metal salts thereof, acrylic acid, methacrylic acid and oleic acid.
- Fumaric acid unsaturated dicarboxylic acids and alkali metal salts thereof, aconitic acid and alkali metal salts thereof, aromatic carboxylic acids such as benzoic acid, salicylic acid, phthalic acid, and alkali metal salts thereof, lactic acid, glyceric acid, apples.
- Hydroxycarboxylic acids such as acid, tartaric acid, 2-hydroxybutyric acid, 3-hydroxybutyric acid, 4-hydroxybutyric acid, citric acid, leucic acid, pantoic acid, pantothenic acid, celebronic acid and their alkali metal salts, ethylenediamine tetraacetic acid, ethylenediamine tetra Examples include disodium acetate.
- Examples of the phosphoric acid compound include oxyphosphoric acid such as phosphoric acid, hypophosphoric acid, and phosphoric acid and its soluble salt, pyrophosphoric acid and its soluble salt, and phosphoric acid ester such as phosphoric acid monododecyl ester and its soluble salt. Examples include phosphoric acid esters and soluble salts thereof, phosphonic acid and derivatives thereof.
- This phosphoric acid compound is derived from a phosphorus-based compound such as sodium hypophosphite and potassium hypophosphite, which are reducing agents contained in the electroless plating solution.
- boric acid compound examples include boric acid anhydride, pyroboric acid, orthoboric acid and derivatives thereof.
- This borate compound contains the reducing agents methylhexaborane, dimethylamineborane, diethylamineborane, morpholinborane, pyridineamineborane, piperidineborane, ethylenediamineborane, ethylenediaminebisborane, t-butylamineborane, which are contained in the electroless plating solution. It is derived from boron-based compounds such as imidazole borane, methoxyethylamine borane, sodium boron hydride, and potassium boron hydride.
- the conductive particles of the present invention are formed by forming a conductive layer on the surface of the core material particles.
- the core material particles may be inorganic or organic as long as they are in the form of particles, and can be used without particular limitation.
- the inorganic core particles include metal particles such as gold, silver, copper, nickel, palladium, and solder, alloys, glass, ceramics, silica, metal or non-metal oxides (including hydrous), and aluminosilicates. Examples thereof include metal silicates, metal carbides, metal nitrides, metal carbonates, metal sulfates, metal phosphates, metal sulfides, metal acid salts, metal halides and carbons.
- examples of the organic core particles include thermoplastics such as natural fibers, natural resins, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polybutene, polyamide, polyacrylic acid ester, polyacrylic nitrile, polyacetal, ionomer, and polyester.
- thermosetting resins such as resins, alkyd resins, phenol resins, urea resins, benzoguanamine resins, melamine resins, xylene resins, silicone resins, epoxy resins and diallyl phthalate resins. These may be used alone or in combination of two or more.
- the core material particles may be composed of a material composed of both an inorganic substance and an organic substance, instead of the material composed of either the above-mentioned inorganic substance or the organic substance.
- the existence mode of the inorganic substance and the organic substance in the core material particles is, for example, a core made of the inorganic substance and an inorganic substance covering the surface of the core. Examples thereof include a core-shell type configuration including a mode including a shell, or a mode including a core made of an organic substance and a shell made of an inorganic substance covering the surface of the core.
- a blend type structure in which an inorganic substance and an organic substance are mixed or randomly fused in one core material particle can be mentioned.
- the core material particles are preferably made of an organic substance or a material made of both an inorganic substance and an organic substance, and more preferably made of a material made of both an inorganic substance and an organic substance.
- the inorganic substances include glass, ceramics, silica, metal or non-metal oxides (including hydrous), metal silicates including aluminosilicates, metal carbides, metal nitrides, metal carbonates, metal sulfates, and metal phosphorus.
- metal silicates including aluminosilicates, metal carbides, metal nitrides, metal carbonates, metal sulfates, and metal phosphorus.
- acid salts metal sulfides, metal acid salts, metal halides and carbons.
- the organic substance is preferably a thermoplastic resin such as natural fiber, natural resin, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polybutene, polyamide, polyacrylic acid ester, polyacrylic nitrile, polyacetal, ionomer, polyester and the like.
- a core material made of such a material it is possible to improve the dispersion stability between particles, and it is possible to develop appropriate elasticity and enhance continuity at the time of electrical connection of an electronic circuit. ..
- the fact that the core material particles do not have a glass transition temperature or the glass transition temperature exceeds 100 ° C. makes it easy to maintain the shape of the core material particles and the core in the process of forming a metal film. It is preferable because it is easy to maintain the shape of the material particles.
- the glass transition temperature can be determined, for example, as the intersection of the tangents of the original baseline and the inflection in the baseline shift portion of the DSC curve obtained by differential scanning calorimetry (DSC).
- the core material particles When an organic substance is used as the core material particles and the organic substance is a highly crosslinked resin, almost no baseline shift is observed even if the glass transition temperature is measured up to 200 ° C. by the above method.
- such particles are also referred to as particles having no glass transition temperature, and in the present invention, such core material particles may be used.
- the core material having no glass transition temperature it can be obtained by copolymerizing the monomer constituting the organic substance exemplified above in combination with the crosslinkable monomer.
- crosslinkable monomer examples include tetramethylene di (meth) acrylate, ethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, ethylene oxide di (meth) acrylate, and tetraethylene oxide.
- Examples thereof include silane-containing monomers, triallyl isocyanurates, diallyl phthalates, diallyl acrylamides, diallyl ethers and the like.
- silane-containing monomers triallyl isocyanurates, diallyl phthalates, diallyl acrylamides, diallyl ethers and the like.
- core material particles made of such a hard organic material are often used.
- the core material particles are spherical.
- the core material particles may have a shape other than a spherical shape, for example, a fibrous shape, a hollow shape, a plate shape, or a needle shape, and may have a large number of protrusions on the surface thereof or an amorphous shape.
- spherical core material particles are preferable in terms of excellent filling property and easy coating with metal.
- the conductive layer formed on the surface of the core material particles is made of a conductive metal.
- the metal constituting the conductive layer include gold, platinum, silver, copper, iron, zinc, nickel, tin, lead, antimony, bismuth, cobalt, indium, titanium, germanium, aluminum, chromium, palladium, tungsten, molybdenum, and the like.
- Metals such as calcium, magnesium, rhodium, sodium, iridium, beryllium, ruthenium, potassium, cadmium, osmium, lithium, rubidium, gallium, tarium, tantalum, cesium, thorium, strontium, poronium, zirconium, barium, manganese or alloys thereof.
- metal compounds such as ITO and solder can be mentioned.
- gold, silver, copper, nickel, palladium, rhodium or solder is preferable because of its low electrical resistance, and nickel, gold, nickel alloy or gold alloy is particularly preferably used.
- the metal may be one kind, or two or more kinds may be used in combination.
- the conductive layer may have a single-layer structure or a laminated structure composed of a plurality of layers.
- the outermost layer may be at least one selected from nickel, gold, silver, copper, palladium, nickel alloy, gold alloy, silver alloy, copper alloy and palladium alloy. preferable.
- the outermost surface layer of the conductive layer is a nickel-phosphorus plating layer or a nickel-boron plating layer.
- the conductive layer may not cover the entire surface of the core material particles, or may cover only a part thereof.
- the coated portions may be continuous, for example, may be discontinuously covered in an island shape.
- the thickness of the conductive layer is preferably 5 nm or more and 2,000 nm or less, and more preferably 10 nm or more and 1,500 nm or less.
- the thickness of the conductive layer is within the above range, the electrical characteristics are excellent and the storage stability is also excellent.
- the conductive particles have protrusions described later, the height of the protrusions is not included in the thickness of the conductive layer referred to here.
- the thickness of the conductive layer can be measured by cutting the particles to be measured into two pieces and observing the cross section of the cut end with a scanning electron microscope (SEM).
- the average particle size of the conductive particles is preferably 0.1 ⁇ m or more and 50 ⁇ m or less, and more preferably 1 ⁇ m or more and 30 ⁇ m or less.
- the average particle size of the conductive particles is a value measured by SEM observation. Specifically, the average particle size of the conductive particles is measured by the method described in Examples.
- the particle diameter is the diameter of a circular conductive particle image. When the conductive particles are not spherical, the particle diameter refers to the largest length (maximum length) of the line segments traversing the conductive particle image.
- the height of the protrusions is preferably 20 nm or more and 1,000 nm or less, more preferably 50 nm and 800 nm or less. ..
- the number of protrusions depends on the particle size of the conductive particles, but is preferably 1 or more and 20,000 or less, and more preferably 5 or more and 5,000 or less per conductive particle. It is advantageous in that the conductivity of the conductive particles is further improved.
- the length of the base of the protrusion is preferably 5 nm or more and 1,000 nm or less, and more preferably 10 nm or more and 800 nm or less.
- the length of the base of the protrusion refers to the length along the surface of the conductive particle at the site where the protrusion is formed when the cross section of the particle is observed by SEM, and the height of the protrusion is from the base of the protrusion to the protrusion apex. The shortest distance to. When one protrusion has a plurality of vertices, the highest vertex is the height of the protrusion.
- the length of the base of the protrusion and the height of the protrusion shall be the arithmetic mean of the values measured for 20 different particles observed by an electron microscope.
- the shape of the conductive particles depends on the shape of the core material particles, but is not particularly limited.
- it may be fibrous, hollow, plate-shaped or needle-shaped, and may have a large number of protrusions on its surface or may be amorphous.
- the shape is spherical or has a large number of protrusions on the outer surface in terms of excellent filling property and connectivity.
- a dry method using a vapor deposition method, a sputtering method, a mechanochemical method, a hybridization method, etc., an electrolytic plating method, a wet method using an electroless plating method, etc. are used.
- a conductive layer may be formed on the surface of the core material particles by combining these methods.
- a nickel-phosphorus plating layer or a nickel-boron plating layer as a conductive layer on the surface of core material particles by an electroless plating method, conductive particles having desired particle characteristics can be obtained. Is preferable because it is easy to use.
- the core material particles are surface-modified so that the surface has the ability to capture noble metal ions or has the ability to capture noble metal ions.
- the noble metal ion is preferably a palladium or silver ion. Having the ability to capture noble metal ions means that the noble metal ions can be captured as a chelate or a salt.
- the surface of the core material particles has an ability to capture noble metal ions.
- the surface is modified so as to have the ability to capture noble metal ions, for example, the method described in JP-A-61-64882 can be used.
- Such core material particles are used to support a precious metal on the surface thereof.
- the core material particles are dispersed in a dilute acidic aqueous solution of a precious metal salt such as palladium chloride or silver nitrate. This causes the noble metal ions to be captured on the surface of the particles.
- the concentration of the noble metal salt is sufficient in the range of 1 ⁇ 10 -7 to 1 ⁇ 10 ⁇ 2 mol per 1 m 2 of the surface area of the particles.
- the core material particles in which the noble metal ions are captured are separated from the system and washed with water. Subsequently, the core material particles are suspended in water, and a reducing agent is added thereto to reduce the noble metal ions.
- the precious metal is carried on the surface of the core material particles.
- the reducing agent for example, sodium hypophosphite, sodium borohydride, potassium borohydride, dimethylamine borane, hydrazine, formalin and the like are used, and the reducing agent is selected from these based on the constituent material of the target conductive layer. It is preferable to be done.
- a sensitization treatment for adsorbing tin ions on the surface of the particles may be performed.
- the surface-modified core material particles may be put into an aqueous solution of stannous chloride and stirred for a predetermined time.
- the conductive layer is formed on the core material particles that have been pretreated in this way.
- a treatment for forming a conductive layer having protrusions will be described.
- the first step is an electroless nickel plating step of mixing an aqueous slurry of core material particles with an electroless nickel plating bath containing a dispersant, a nickel salt, a reducing agent, a complexing agent and the like.
- self-decomposition of the plating bath occurs at the same time as the formation of the conductive layer on the core material particles. Since this autolysis occurs in the vicinity of the core material particles, the autolyzed material is trapped on the surface of the core material particles when the conductive layer is formed, so that the nuclei of microprojections are generated, and at the same time, the conductive layer is formed. Will be done.
- the protrusion grows from the nucleus of the generated microprotrusion as a base point.
- the above-mentioned core material particles are sufficiently dispersed in water in the range of preferably 0.1 to 500 g / L, more preferably 1 to 300 g / L to prepare an aqueous slurry.
- the dispersion operation can be carried out by normal stirring, high speed stirring or by using a shear dispersion device such as a colloid mill or a homogenizer. Further, ultrasonic waves may be used in combination with the dispersion operation. If necessary, a dispersant such as a surfactant may be added in the dispersion operation.
- the aqueous slurry of the core material particles subjected to the dispersion operation is added to the electroless nickel plating bath containing the nickel salt, the reducing agent, the complexing agent, various additives and the like, and the first step of the electroless plating is performed.
- Examples of the above-mentioned dispersant include nonionic surfactants, zwitterionic surfactants and / or water-soluble polymers.
- a nonionic surfactant a polyoxyalkylene ether-based surfactant such as polyethylene glycol, polyoxyethylene alkyl ether, or polyoxyethylene alkyl phenyl ether can be used.
- a betaine-based surfactant such as alkyldimethylacetate betaine, alkyldimethylcarboxymethyl acetate betaine, and alkyldimethylaminoacetate betaine can be used.
- the water-soluble polymer polyvinyl alcohol, polyvinylpyrrolidinone, hydroxyethyl cellulose and the like can be used. These dispersants can be used alone or in combination of two or more.
- the amount of the dispersant used depends on the type, but is generally 0.5 to 30 g / L with respect to the volume of the liquid (electroless nickel plating bath). In particular, when the amount of the dispersant used is in the range of 1 to 10 g / L with respect to the volume of the liquid (electroless nickel plating bath), it is preferable from the viewpoint of further improving the adhesion of the conductive layer.
- the nickel salt for example, nickel chloride, nickel sulfate, nickel acetate or the like is used, and the concentration thereof is preferably in the range of 0.1 to 50 g / L.
- the reducing agent for example, the same one as that used for the reduction of the noble metal ion described above can be used, and the reducing agent is selected based on the constituent material of the target base film.
- the concentration thereof is preferably in the range of 0.1 to 50 g / L.
- a boron compound for example, dimethylamine borane is used as the reducing agent, the concentration thereof is preferably in the range of 0.01 to 100 g / L.
- the complexing agent examples include citric acid, hydroxyacetic acid, tartaric acid, malic acid, lactic acid, gluconic acid or carboxylic acids (salts) such as alkali metal salts and ammonium salts thereof, amino acids such as glycine, and amines such as ethylenediamine and alkylamine. Acids and other compounds that have a complexing effect on nickel ions, such as ammonium, EDTA or pyrophosphate (salt), are used. These can be used alone or in combination of two or more.
- the concentration is preferably in the range of 1 to 100 g / L, more preferably 5 to 50 g / L.
- the pH of the preferred electroless nickel plating bath at this stage is in the range of 3-14.
- the electroless nickel plating reaction starts promptly when an aqueous slurry of core particles is added, and is accompanied by the generation of hydrogen gas. The first step is terminated when the generation of hydrogen gas is completely no longer recognized.
- a first aqueous solution containing one of a nickel salt, a reducing agent and an alkali, and a second aqueous solution containing the remaining two are added. Either used, or (ii) a first aqueous solution containing a nickel salt, a second aqueous solution containing a reducing agent, and a third aqueous solution containing an alkali are used, and these aqueous solutions are used simultaneously and over time, respectively.
- Electroless nickel plating is performed by adding to the liquid of one step. When these liquids are added, the plating reaction starts again, and the conductive layer formed can be controlled to a desired film thickness by adjusting the addition amount. After the addition of the electroless nickel plating solution is completed, after the generation of hydrogen gas is completely no longer observed, stirring is continued while maintaining the liquid temperature for a while to complete the reaction.
- first aqueous solution containing a nickel salt and a second aqueous solution containing a reducing agent and an alkali it is preferable to use a first aqueous solution containing a nickel salt and a second aqueous solution containing a reducing agent and an alkali, but the combination is not limited to this.
- the first aqueous solution does not contain the reducing agent and the alkali
- the second aqueous solution does not contain the nickel salt.
- the nickel salt and the reducing agent those described above can be used.
- alkali for example, a hydroxide of an alkali metal such as sodium hydroxide or potassium hydroxide can be used. The same applies to the case of (ii) above.
- the first to third aqueous solutions contain nickel salts, reducing agents and alkalis, respectively, and each aqueous solution does not contain any other two components other than the components.
- the concentration of the nickel salt in the aqueous solution is preferably 10 to 1,000 g / L, particularly preferably 50 to 500 g / L.
- the concentration of the reducing agent is preferably 100 to 1,000 g / L, particularly preferably 100 to 800 g / L.
- a boron compound is used as the reducing agent, it is preferably 5 to 200 g / L, particularly preferably 10 to 100 g / L.
- hydrazine or a derivative thereof is used as the reducing agent, it is preferably 5 to 200 g / L, particularly preferably 10 to 100 g / L.
- the alkali concentration is preferably 5 to 500 g / L, particularly preferably 10 to 200 g / L.
- the second step is continuously performed after the completion of the first step, but instead of this, the first step and the second step may be performed intermittently.
- the core material particles and the plating solution are separated by a method such as filtration, and the core material particles are newly dispersed in water to prepare an aqueous slurry, and a complexing agent is prepared therein.
- the dispersant is preferably 0.5 to 30 g / L, more preferably 1 to 10 g / L.
- the formation of the conductive layer having a smooth surface can be performed by reducing the concentration of the nickel salt in the electroless nickel plating bath in the first step of the treatment for forming the conductive layer having the protrusions. That is, as the nickel salt, for example, nickel chloride, nickel sulfate, nickel acetate or the like is used, and the concentration thereof is preferably in the range of 0.01 to 0.5 g / L.
- a conductive layer having a smooth surface can be formed by the method of performing the first step and the second step other than reducing the concentration of the nickel salt in the electroless nickel plating bath.
- the conductive particles of the present invention are obtained by using the conductive particles obtained by the above method at 200 to 600 ° C. under a vacuum of 1,000 Pa or less, preferably 0.01 to 900 Pa, particularly preferably 0.01 to 500 Pa. It is preferably obtained by heat treatment at a temperature of 250 to 500 ° C, particularly preferably 300 to 450 ° C. By heating the conductive particles while maintaining such a vacuum state, the ratio of carbon and oxygen present on the surface of the conductive layer can be reduced, and the molar ratio of phosphorus to carbon, oxygen and nickel is appropriate. It becomes.
- the degree of vacuum in the present invention is an absolute pressure, that is, a value when the absolute vacuum is 0.
- the heat treatment time is preferably 0.1 to 10 hours, more preferably 0.5 to 5 hours. By adopting this processing time, it is possible to suppress an increase in manufacturing cost, and it is possible to suppress denaturation of core material particles and conductive layer due to thermal history, and to reduce the influence on quality.
- This heat treatment time is the time from reaching the target treatment temperature to the end of the heat treatment.
- the heat treatment may be performed in a state where the conductive particles are allowed to stand still, or may be performed while stirring.
- the heat treatment is performed by vacuuming the container containing the conductive particles and then allowing the container to stand still or stirring. At this time, the gas phase portion of the container containing the conductive particles may be replaced with an inert gas such as nitrogen and then evacuated, or may be evacuated as it is. Further, the heat treatment may be performed a plurality of times if necessary. In this way, the conductive particles of the present invention can be obtained.
- the surface thereof can be further coated with an insulating resin in order to prevent the occurrence of short circuits between the conductive particles. ..
- the coating of the insulating resin is destroyed by the heat and pressure applied when the two electrodes are bonded together with a conductive adhesive so that the surface of the conductive particles is not exposed as much as possible when no pressure is applied. , At least the protrusions on the surface of the conductive particles are exposed.
- the thickness of the insulating resin can be about 0.1 to 0.5 ⁇ m.
- the insulating resin may cover the entire surface of the conductive particles, or may cover only a part of the surface of the conductive particles.
- insulating resin those known in the technical field can be widely used.
- a chemical method such as a core selvation method, an interfacial polymerization method, an insitu polymerization method and a liquid curing coating method, a spray drying method, and an aerial suspension coating method are used.
- a physico-mechanical method such as a vacuum vapor deposition coating method, a dry blend method, a hybridization method, an electrostatic coalescence method, a melting dispersion cooling method and an inorganic encapsulation method, and a physicochemical method such as an interfacial precipitation method.
- the organic polymer constituting the insulating resin may contain a compound containing an ionic group as a monomer component in the structure of the polymer, provided that it is non-conductive.
- the compound containing an ionic group may be a crosslinkable monomer or a non-crosslinkable monomer. That is, it is preferable that the organic polymer is formed by using a compound in which at least one of the crosslinkable monomer and the non-crosslinkable monomer has an ionic group.
- the "monomer component" refers to a structure derived from a monomer in an organic polymer, and is a component derived from the monomer. By subjecting the monomer to polymerization, an organic polymer containing the monomer component as a constituent unit is formed.
- the ionic group is preferably present at the interface of the organic polymer constituting the insulating resin. Further, it is preferable that the ionic group is chemically bonded to the monomer component constituting the organic polymer. Whether or not the ionic group is present at the interface of the organic polymer is determined by the scanning electron microscope observation when the insulating resin containing the organic polymer having the ionic group is formed on the surface of the conductive particles. It can be determined by whether or not it adheres to the surface of the particles.
- the ionic group examples include onium-based functional groups such as a phosphonium group, an ammonium group and a sulfonium group.
- onium-based functional groups such as a phosphonium group, an ammonium group and a sulfonium group.
- ammonium groups or phosphonium groups are preferable from the viewpoint of enhancing the adhesiveness of the conductive particles and the insulating resin to form conductive particles having both insulating properties and conduction reliability at a high level. It is more preferably a phosphonium group.
- onium-based functional group those represented by the following general formula (1) are preferably mentioned.
- X is a phosphorus atom, a nitrogen atom, or a sulfur atom
- R may be the same or different, and is a hydrogen atom, a linear, branched or cyclic alkyl group, or an aryl group.
- N is 1 when X is a nitrogen atom and a phosphorus atom, and 0 when X is a sulfur atom. * Is a bond.
- Examples of the counterion for the ionic group include halide ions.
- Examples of halide ions include Cl ⁇ , F ⁇ , Br ⁇ , and I ⁇ .
- examples of the linear alkyl group represented by R include a linear alkyl group having 1 or more and 20 or less carbon atoms, and specifically, a methyl group, an ethyl group, or n ⁇ .
- examples of the branched alkyl group represented by R include a branched alkyl group having 3 or more carbon atoms and 8 or less carbon atoms, and specifically, an isopropyl group, an isobutyl group, or s-.
- examples thereof include a butyl group, a t-butyl group, an isopentyl group, an s-pentyl group, a t-pentyl group, an isohexyl group, an s-hexyl group, a t-hexyl group and an ethylhexyl group.
- examples of the cyclic alkyl group represented by R include cycloalkyl groups such as cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group and cyclooctadecyl group. ..
- examples of the aryl group represented by R include a phenyl group, a benzyl group, a tolyl group, an o-kisilyl group and the like.
- R is preferably an alkyl group having 1 or more and 12 or less carbon atoms, more preferably an alkyl group having 1 or more and 10 or less carbon atoms, and an alkyl group having 1 or more and 8 or less carbon atoms. Is more preferable. Further, in the general formula (1), it is further preferable that R is a linear alkyl group.
- the organic polymer having an ionic group constituting the insulating resin is represented by the following general formula (2) or general formula (3). It is preferable to have a structural unit represented.
- X, R and n are synonymous with the general formula (1).
- M is an integer of 0 or more and 5 or less .
- An ⁇ indicates a monovalent anion.
- X, R and n are synonymous with the general formula (1).
- An ⁇ represents a monovalent anion.
- M 1 is an integer of 1 or more and 5 or less.
- R 5 is a hydrogen atom or It is a methyl group.
- R in the formula (2) and the formula (3) the description of the functional group of R in the general formula (1) described above is appropriately applied.
- the ionic group may be bonded to any of the para-position, the ortho-position, and the meta-position with respect to the CH group of the benzene ring of the formula (2), and is preferably bonded to the para-position.
- a halide ion is preferably mentioned as the monovalent An ⁇ . Examples of halide ions include Cl ⁇ , F ⁇ , Br ⁇ , and I ⁇ .
- m is preferably an integer of 0 or more and 2 or less, more preferably 0 or 1, and particularly preferably 1.
- m 1 is preferably 1 or more and 3 or less, more preferably 1 or 2, and most preferably 2.
- the organic polymer having an ionic group is preferably composed, for example, containing a monomer component having an onium-based functional group and an ethylenically unsaturated bond. From the viewpoint of facilitating the acquisition of the monomer and the synthesis of the polymer and increasing the production efficiency of the insulating resin, the organic polymer having an ionic group preferably contains a non-crosslinkable monomer component.
- non-crosslinkable monomer having an onium-based functional group and an ethylenically unsaturated bond examples include N, N-dimethylaminoethyl methacrylate, N, N-dimethylaminopropylacrylamide, N, N, N-trimethyl.
- -N-2-Armium group-containing monomer such as methacryloyloxyethylammonium chloride; Monomer having a sulfonium group such as phenyldimethylsulfonate sulfonatemethylsulfate; 4- (vinylbenzyl) triethylphosphonium chloride, 4- (vinylbenzyl) trimethyl Phosphonium chloride, 4- (vinylbenzyl) tributylphosphonium chloride, 4- (vinylbenzyl) trioctylphosphonium chloride, 4- (vinylbenzyl) triphenylphosphonium chloride, 2- (methacloyloxyethyl) trimethylphosphonium chloride, 2-( Phosphonium groups such as metachlorooxyethyl) triethylphosphonium chloride, 2- (methacloyloxyethyl) tributylphosphonium chloride, 2- (methacloyloxyethyl)
- an ionic group may be bonded to all of the monomer components, or an ionic group may be bonded to a part of all the constituent units of the organic polymer. good.
- the ratio of the monomer component to which the ionic group is bonded is preferably 0.01 mol% or more and 99 mol% or less, and is 0. More preferably, it is 0.02 mol% or more and 95 mol% or less.
- the number of monomer components in the organic polymer counts the structure derived from one ethylenically unsaturated bond as a constituent unit of one monomer.
- the ionic group is contained in both the crosslinkable monomer and the non-crosslinkable monomer, the ratio of the monomer components is the total amount.
- Examples of the form of coating with the insulating resin include a form in which a plurality of insulating fine particles are arranged in a layer, or an insulating continuous film.
- the insulating fine particles are melted, deformed, peeled off, or moved on the surface of the conductive particles by heat-bonding the conductive particles coated with the insulating fine particles between the electrodes to generate heat.
- the metal surface of the conductive particles in the crimped portion is exposed, which enables conduction between the electrodes and provides connectivity.
- the surface portion of the conductive particles facing a direction other than the thermocompression bonding direction is generally maintained in a state of being covered with the insulating fine particles on the surface of the conductive particles, conduction in a direction other than the thermocompression bonding direction is prevented. ..
- the insulating fine particles can easily adhere to the conductive particles, whereby the ratio of the insulating fine particles covered with the insulating fine particles on the surface of the conductive particles can be made sufficient, and the insulating fine particles are conductive.
- the peeling of insulating fine particles from the particles is effectively prevented. Therefore, the effect of preventing a short circuit in a direction different from that between the counter electrodes by the insulating fine particles is likely to be exhibited, and improvement in the insulating property in that direction can be expected.
- the shape of the insulating fine particles is not particularly limited and may be spherical or may be a shape other than spherical.
- Examples of the shape other than the spherical shape include a fibrous shape, a hollow shape, a plate shape, and a needle shape.
- the insulating fine particles may have a large number of protrusions on the surface thereof or may have an amorphous shape. Spherical insulating fine particles are preferable in terms of adhesion to conductive particles and ease of synthesis.
- the average particle size (D) of the insulating fine particles is preferably 10 nm or more and 3,000 nm or less, and more preferably 15 nm or more and 2,000 nm or less.
- the average particle size of the insulating fine particles is within the above range, it is easy to secure conduction between the counter electrodes without causing a short circuit in the obtained coated particles in a direction different from that between the counter electrodes.
- the average particle size of the insulating fine particles is a value measured by observation using a scanning electron microscope, and specifically, it is measured by the method described in Examples described later.
- the particle size distribution of the insulating fine particles measured by the above method varies.
- the width of the particle size distribution of the powder is represented by the coefficient of variation (hereinafter also referred to as “CV”) represented by the following formula (1).
- C. V. (%) (Standard deviation / average particle size) x 100 ... (1)
- the coated particles of this embodiment are C.I. V. It is preferable to use insulating fine particles of 0.1% or more and 20% or less, more preferably 0.5% or more and 15% or less, and most preferably 1% or more and 10% or less. C. V. However, there is an advantage that the thickness of the coating layer made of the insulating fine particles can be made uniform.
- the insulating resin may be a continuous film made of a polymer and having an ionic group instead of the above-mentioned insulating fine particles.
- the insulating resin is a continuous film having an ionic group
- the conductive particles are thermally pressure-bonded between the electrodes to melt, deform or peel off the continuous film, and the metal surface of the conductive particles is exposed. This enables continuity between the electrodes and provides connectivity.
- the metal surface is often exposed by tearing the continuous film by thermocompression bonding the conductive particles between the electrodes.
- the coating state of the conductive particles by the continuous film is generally maintained, so that conduction in a direction other than the thermocompression bonding direction is prevented. It is preferable that the continuous film also has an ionic group on the surface.
- the thickness of the continuous film is preferably 10 nm or more from the viewpoint of improving the insulating property in a direction different from that between the counter electrodes, and 3,000 nm or less is preferable from the viewpoint of ease of conduction between the counter electrodes. Is preferable. From this point of view, the thickness of the continuous film is preferably 10 nm or more and 3,000 nm or less, and more preferably 15 nm or more and 2,000 nm or less.
- the ionic group in the continuous film, preferably forms a part of the chemical structure of the substance as a part of the substance constituting the continuous film.
- the ionic group is preferably contained in at least one structure of the constituent unit of the polymer constituting the continuous film.
- the ionic group is preferably chemically bonded to the polymer constituting the continuous film, and more preferably bonded to the side chain of the polymer.
- the insulating particles are a continuous film obtained by coating the conductive particles with insulating fine particles having an ionic group on the surface and then heating the insulating fine particles.
- it is preferably a continuous film obtained by dissolving the insulating fine particles with an organic solvent.
- the insulating fine particles having an ionic group easily adhere to the conductive particles, whereby the ratio of being covered with the insulating fine particles on the surface of the conductive particles becomes sufficient, and the conductive particles are covered with the insulating fine particles. It becomes easy to prevent the peeling of the insulating fine particles from. Therefore, the continuous film obtained by heating or dissolving the insulating fine particles that coat the conductive particles can have a uniform thickness and a high coating ratio on the surface of the conductive particles.
- the conductive particles according to the production method of the present invention may be treated with a surface treatment agent for the purpose of increasing the affinity with the insulating resin and improving the adhesion.
- a surface treatment agent include benzotriazole-based compounds, titanium-based compounds, higher fatty acids or derivatives thereof, phosphoric acid esters, phosphite esters and the like. These may be used alone or in combination of two or more as needed.
- the surface treatment agent may or may not be chemically bonded to the metal on the surface of the conductive particles.
- the surface treatment agent may be present on the surface of the conductive particles, and in that case, it may be present on the entire surface of the conductive particles, or may be present only on a part of the surface.
- triazole-based compound examples include compounds having a nitrogen-containing heterocyclic structure having three nitrogen atoms in a 5-membered ring.
- Examples of the triazole-based compound include a compound having a triazole monocyclic structure that is not condensed with another ring, and a compound having a ring structure in which a triazole ring and another ring are condensed.
- Examples of other rings include a benzene ring and a naphthalene ring.
- a compound having a ring structure in which a triazole ring and another ring are condensed is preferable because of its excellent adhesion to an insulating resin
- a benzotriazole compound which is a compound having a structure in which a triazole ring and a benzene ring are condensed is particularly preferable.
- the benzotriazole-based compound include those represented by the following general formula (I).
- R 11 is a negative charge, a hydrogen atom, an alkali metal, an optionally substituted alkyl group, an amino group, a formyl group, a hydroxyl group, an alkoxy group, a sulfonic acid group or a silyl group, and R 12 ,.
- R 13 , R 14 and R 15 are independently hydrogen atoms, halogen atoms, optionally substituted alkyl groups, carboxyl groups, hydroxyl groups or nitro groups.
- Examples of the alkali metal represented by R 11 in the formula (I) include lithium, sodium, potassium and the like.
- the alkali metal represented by R 11 is an alkali metal cation, and when R 11 in the formula (I) is an alkali metal, the bond between R 11 and the nitrogen atom may be an ionic bond.
- Examples of the alkyl group represented by R 11 , R 12 , R 13 , R 14 and R 15 in the formula (I) include those having 1 to 20 carbon atoms, and 1 to 12 carbon atoms are particularly preferable.
- the alkyl group may be substituted, and the substituents include an amino group, an alkoxy group, a carboxyl group, a hydroxyl group, an aldehyde group, a nitro group, a sulfonic acid group, a quaternary ammonium group, a sulfonium group and a sulfonyl group.
- substituents include an amino group, an alkoxy group, a carboxyl group, a hydroxyl group, an aldehyde group, a nitro group, a sulfonic acid group, a quaternary ammonium group, a sulfonium group and a sulfonyl group.
- Examples include a phosphonium group, a cyano group, a fluoroalkyl group, a mercapto group, and a halogen atom.
- the alkoxy group represented by R 11 those having 1 to 12 carbon atoms are preferably mentioned.
- the number of carbon atoms of the alkoxy group as a substituent of the alkyl group represented by R 12 , R 13 , R 14 and R 15 is preferably 1 to 12.
- the halogen atom represented by R 12 , R 13 , R 14 and R 15 in the formula (I) include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like.
- triazole-based compounds include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, and 5 as compounds having a triazole monocyclic structure.
- -Mercapto-1H-1,2,3-triazole sodium 4-amino-3-hydrazino-5-mercapto-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole
- benzotriazole having a ring structure in which a triazole ring and another ring are condensed, 1-methyl-1H-benzotriazole, 4-methyl-1H-benzotriazole, 5-methyl-1H-benzotriazole, 4 -Carboxy-1H-benzotriazole, 5-carboxy-1H-benzotriazole, 5-ethyl-1H-benzotriazole, 5-propyl-1H-benzotriazole, 5,6-dimethyl-1H-benzotriazole, 1-aminobenzo Tri
- the titanium-based compound for example, when a compound having a structure represented by the general formula (II) is present on the surface of conductive particles, an affinity between the insulating resin and the conductive particles can be easily obtained and a solvent. It is particularly preferable because it is easy to disperse in the particle and the surface of the conductive particles can be uniformly treated.
- R 21 is a divalent or trivalent group
- Examples of the aliphatic hydrocarbon group having 4 or more and 28 or less carbon atoms represented by R 22 include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group and a nonyl group.
- Decyl group dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, henicosyl group, docosyl group and the like.
- Examples of unsaturated aliphatic hydrocarbon groups include dodecenyl group, tridecenyl group, tetradecenyl group, pentadecenyl group, hexadecenyl group, heptadecenyl group, nonadesenyl group, icosenyl group, eicosenyl group, henicosenyl group and docosenyl group as alkenyl groups. Be done.
- Examples of the aryl group having 6 or more and 22 or less carbon atoms include a phenyl group, a tolyl group, a naphthyl group, an anthryl group and the like.
- Examples of the arylalkyl group having 7 or more and 23 or less carbon atoms include a benzyl group, a phenethyl group, a naphthylmethyl group and the like.
- a linear or branched aliphatic hydrocarbon group is particularly preferable, and a linear aliphatic hydrocarbon group is particularly preferable.
- the aliphatic hydrocarbon group as the hydrophobic group those having 4 or more and 28 or less carbon atoms are more preferable, and those having 6 or more and 24 or less are the most preferable, from the viewpoint of enhancing the affinity between the insulating resin and the conductive particles. preferable.
- Examples of the divalent group represented by R 21 include -O-, -COO-, -OCO-, -OSO 2- and the like.
- Examples of the trivalent group represented by R 21 include -P (OH) (O-) 2 , -OPO (OH) -OPO (O-) 2, and the like.
- * is a bond, and the bond may be bonded to the metal film of the conductive particles, or may be bonded to another group or the like.
- groups in that case include hydrocarbon groups, and specific examples thereof include alkyl groups having 1 or more and 12 or less carbon atoms.
- the compound having the structure in which R 21 is a divalent group in the general formula (II) has the availability and the conductive property of the conductive particles. It is preferable in that it can be processed without damage.
- the structure in which R 21 is a divalent group in the general formula (II) is represented by the following general formula (III).
- R 21 is a group selected from -O-, -COO-, -OCO-, and -OSO 2- , and p, r and R 22 are synonymous with the general formula (II).
- r is preferably 2 or 3, from the viewpoint of improving the adhesion between the insulating resin and the conductive layer, and r is most preferably 3.
- titanate-based coupling agent used in the present invention examples include isopropyltriisostearoyl titanate, isopropyltridodecylbenzenesulfonyl titanate, isopropyltris (dioctylpyrophosphate) titanate, tetraisopropyl (dioctylphosphite) titanate, and tetraisopropylbis.
- titanate (Dioctylphosphite) titanate, tetraoctylbis (ditridecylphosphite) titanate, tetra (2,2-diallyloxymethyl-1-butyl) bis (ditridecyl) phosphite titanate, bis (dioctylpyrophosphate) oxyacetate titanate, Examples thereof include bis (dioctylpyrophosphate) ethylene titanate, and these can be used in one kind or two or more kinds.
- These titanate-based coupling agents are commercially available, for example, from Ajinomoto Fine-Techno Co., Ltd.
- the higher fatty acid is preferably a saturated or unsaturated linear or branched mono or polycarboxylic acid, more preferably a saturated or unsaturated linear or branched monocarboxylic acid. More preferably, it is a saturated or unsaturated linear monocarboxylic acid.
- the fatty acid preferably has 7 or more carbon atoms.
- the derivative refers to a salt or amide of the fatty acid.
- the higher fatty acid or its derivative used in the present invention preferably has 7 to 23 carbon atoms, more preferably 10 to 20 carbon atoms.
- Examples of such higher fatty acids or derivatives thereof include saturated fatty acids such as capric acid, lauric acid, myristic acid, palmitic acid and stearic acid, unsaturated fatty acids such as oleic acid, linoleic acid, linolenic acid and arachidonic acid, or these.
- Metal salts or amides of the above can be mentioned.
- the metal salt of the higher fatty acid examples include alkali metals, alkaline earth metals, transition metals such as Zr, Cr, Mn, Fe, Co, Ni, Cu and Ag, and metals other than transition metals such as Al and Zn. Examples thereof include polyvalent metal salts such as Al, Zn, W and V.
- the higher fatty acid metal salt may be a mono-form, a di-form, a tri-form, a tetra-form or the like, depending on the valence of the metal.
- the higher fatty acid metal salt may be any combination thereof.
- the phosphoric acid ester and the phosphite ester those having an alkyl group having 6 to 22 carbon atoms are preferably used.
- the phosphoric acid ester include phosphoric acid hexyl ester, phosphoric acid heptyl ester, phosphoric acid monooctyl ester, phosphoric acid monononyl ester, phosphoric acid monodecyl ester, phosphoric acid monoundecyl ester, phosphoric acid monododecyl ester, and phosphorus.
- Examples thereof include acid monotridecyl ester, phosphoric acid monotetradecyl ester, and phosphoric acid monopentadecyl ester.
- phosphite ester examples include succinic acid hexyl ester, succinic acid heptyl ester, sulphate monooctyl ester, sulphate monononyl ester, sulphate monodecyl ester, and sulphate monoundecyl ester.
- examples thereof include phosphite monododecyl ester, sulphate monotridecyl ester, sulphate monotetradecyl ester, and sulphate monopentadecyl ester.
- the surface treatment agent is preferably a triazole-based compound or a titanium-based compound, and is particularly benzotriazole or 4-carboxyl, because it has an excellent affinity with the insulating resin and has a high effect of increasing the coverage of the insulating resin.
- Benzotriazole, isopropyltriisostearoyl titanate, and tetraisopropyl (dioctylphosphite) titanate are particularly preferred.
- the method of treating the conductive particles with a surface treatment agent is obtained by dispersing the conductive particles in a solution of the surface treatment agent and then filtering the particles. Before the treatment with the surface treatment agent, the conductive particles may be treated with another treatment agent or may not be treated.
- the concentration of the surface treatment agent in the solution of the surface treatment agent for dispersing the conductive particles (solution containing the conductive particles) is 0.01% by mass or more and 10.0% by mass or less.
- the solvent in the solution of the surface treatment agent is water, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutyl alcohol, isopentyl alcohol, cyclohexanol, and other alcohols, acetone, and methyl.
- Ketones such as isobutyl ketone, methyl ethyl ketone, methyl-n-butyl ketone, esters such as methyl acetate and ethyl acetate, ethers such as diethyl ether and ethylene glycol monoethyl ether, normal hexane, cyclohexanone, toluene, 1,4 -Dioxane, N, N-dimethylformamide, tetrahydrofuran and the like can be mentioned. It is preferable that the dispersed and filtered conductive particles after the surface treatment are dispersed in the solvent again to remove the excess surface treatment agent.
- the surface treatment of the conductive particles with the surface treatment agent can be performed by mixing the conductive particles, the surface treatment agent and the solvent at room temperature.
- the conductive particles and the surface treatment agent may be mixed in a solvent and then heated to accelerate the reaction.
- the heating temperature is, for example, 30 ° C. or higher and 50 ° C. or lower.
- the conductive particles of the present invention are conductive for connecting, for example, an anisotropic conductive film (ACF), a heat-sealed connector (HSC), or an electrode of a liquid crystal display panel to a circuit board of a driving LSI chip. It is suitably used as a sex material.
- the conductive material include the use of the conductive particles of the present invention as they are, or the use of the conductive particles of the present invention dispersed in a binder resin.
- Other forms of the conductive material are not particularly limited, and examples thereof include an anisotropic conductive paste, a conductive adhesive, and an anisotropic conductive ink.
- binder resin examples include thermoplastic resins and thermosetting resins.
- thermoplastic resin examples include acrylic resin, styrene resin, ethylene-vinyl acetate resin, styrene-butadiene block copolymer and the like
- thermosetting resin examples include epoxy resin, phenol resin and urea resin. Examples thereof include polyester resin, urethane resin, and polyimide resin.
- the conductive material includes a tackifier, a reactive aid, an epoxy resin curing agent, a metal oxide, a photoinitiator, a sensitizer, and curing, if necessary.
- Agents, vulcanizers, deterioration inhibitors, heat resistant additives, heat conduction improvers, softeners, colorants, various coupling agents, metal deactivators and the like can be blended.
- the amount of the conductive particles used may be appropriately determined according to the intended use, but from the viewpoint of facilitating electrical conduction without contacting the conductive particles, for example, 100 mass of the conductive material. It is preferably 0.01 parts by mass or more and 50 parts by mass or less, particularly preferably 0.03 parts by mass or more and 40 parts by mass or less.
- the conductive particles of the present invention are particularly preferably used as a conductive filler for a conductive adhesive.
- the conductive adhesive is disposed between two substrates on which a conductive substrate is formed, and is preferably used as an anisotropic conductive adhesive that adheres and conducts the conductive substrate by heating and pressurizing. ..
- This anisotropic conductive adhesive contains the conductive particles of the present invention and an adhesive resin.
- the adhesive resin can be used without particular limitation as long as it has an insulating property and is used as an adhesive resin. It may be either a thermoplastic resin or a thermosetting resin, and it is preferable that the adhesive performance is exhibited by heating.
- Such adhesive resins include, for example, a thermoplastic type, a thermosetting type, an ultraviolet curable type and the like.
- thermosetting type a composite type of a thermosetting type and an ultraviolet curable type, and the like, which show intermediate properties between a thermoplastic type and a thermosetting type.
- adhesive resins can be appropriately selected according to the surface characteristics of the circuit board or the like to be adhered and the usage pattern.
- an adhesive resin composed of a thermosetting resin is preferable because it has excellent material strength after bonding.
- the adhesive resin examples include ethylene-vinyl acetate copolymer, carboxyl-modified ethylene-vinyl acetate copolymer, ethylene-isobutyl acrylate copolymer, polyamide, polyimide, polyester, polyvinyl ether, polyvinyl butyral, and polyurethane.
- SBS block copolymer carboxyl-modified SBS copolymer, SIS copolymer, SEBS copolymer, maleic acid-modified SEBS copolymer, polybutadiene rubber, chloroprene rubber, carboxyl-modified chloroprene rubber, styrene-butadiene rubber, isobutylene- One or two selected from isoprene copolymer, acrylonitrile-butadiene rubber (hereinafter referred to as NBR), carboxyl-modified NBR, amine-modified NBR, epoxy resin, epoxy ester resin, acrylic resin, phenol resin, silicone resin and the like. Examples thereof include those prepared by using the one obtained by the above combination as the main agent.
- thermoplastic resin styrene-butadiene rubber, SEBS, and the like are preferable as the thermoplastic resin because they have excellent reworkability.
- thermosetting resin an epoxy resin is preferable. Of these, epoxy resin is most preferable because it has high adhesive strength, excellent heat resistance and electrical insulation, low melt viscosity, and can be connected at low pressure.
- epoxy resin a commonly used epoxy resin can be used as long as it is a polyvalent epoxy resin having two or more epoxy groups in one molecule.
- specific examples include novolak resins such as phenol novolac and cresol novolak, polyhydric phenols such as bisphenol A, bisphenol F, bisphenol AD, resorcin, and bishydroxydiphenyl ether, ethylene glycol, neopentyl glycol, glycerin, and trimethylolpropane.
- Polyhydric alcohols such as polypropylene glycol, polyamino compounds such as ethylenediamine, triethylenetetramine, and aniline, polyhydric carboxy compounds such as adipic acid, phthalic acid, and isophthalic acid, etc., and epichlorhydrin or 2-methylepicrolhydrin.
- a glycidyl type epoxy resin is exemplified. Examples thereof include aliphatic and alicyclic epoxy resins such as dicyclopentadiene epoxiside and butadiene dimer epoxiside. These can be used alone or in admixture of two or more.
- the amount of the conductive particles used in the anisotropic conductive adhesive is usually 0.1 to 30 parts by mass, preferably 0.5 to 25 parts by mass, and more preferably 1 to 20 parts by mass with respect to 100 parts by mass of the adhesive resin component. It is a department. When the amount of the conductive particles used is within this range, it is possible to suppress the increase in connection resistance and melt viscosity, improve the connection reliability, and sufficiently secure the anisotropy of the connection.
- the above-mentioned anisotropic conductive adhesive may contain additives known in the art.
- the blending amount may also be within the range known in the art.
- Other additives include, for example, tackifiers, reactive aids, epoxy resin hardeners, metal oxides, photoinitiators, sensitizers, hardeners, vulcanizers, deterioration inhibitors, heat resistant additives, heat. Examples thereof include conduction improvers, softeners, colorants, various coupling agents, and metal deactivators.
- tackifier examples include rosin, rosin derivative, terpene resin, terpene phenol resin, petroleum resin, kumaron-inden resin, styrene resin, isoprene resin, alkylphenol resin, xylene resin and the like.
- reactive auxiliary agent examples include polyols, isocyanates, melamine resins, urea resins, utropines, amines, acid anhydrides, peroxides and the like.
- the epoxy resin curing agent can be used without particular limitation as long as it has two or more active hydrogens in one minute.
- polyamino compounds such as diethylenetriamine, triethylenetetramine, metaphenylenediamine, dicyandiamide and polyamideamine
- organic acid anhydrides such as phthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride and pyromellitic anhydride.
- Novolac resins such as phenol novolac and cresol novolak can be mentioned. These can be used alone or in admixture of two or more. Further, a latent curing agent may be used if necessary.
- latent curing agent examples include imidazole-based, hydrazide-based, boron trifluoride-amine complex, sulfonium salt, amineimide, polyamine salt, dicyandiamide and the like, and modified products thereof. These can be used alone or as a mixture of two or more.
- the anisotropic conductive adhesive is manufactured by using a manufacturing apparatus usually used in the technical field. For example, conductive particles, an adhesive resin, and if necessary, a curing agent and various additives are blended, and if the adhesive resin is a thermosetting resin, it is mixed in an organic solvent, and if it is a thermoplastic resin, it is bonded. It is produced by melt-kneading at a temperature equal to or higher than the softening point of the agent resin, specifically preferably at about 50 to 130 ° C, more preferably about 60 to 110 ° C.
- the anisotropic conductive adhesive thus obtained may be applied or may be applied in the form of a film.
- connection structure according to the present invention is obtained by connecting two circuit boards to each other using the conductive particles according to the present invention or the conductive material according to the present invention.
- Examples of the form of the connection structure include a connection structure between a flexible printed substrate and a glass substrate, a connection structure between a semiconductor chip and a flexible printed substrate, a connection structure between a semiconductor chip and a glass substrate, and the like.
- the characteristics in the example were measured by the following method.
- TOF-SIMS5 type manufactured by ION-TOF
- Positive ions derived from amine compounds CH 4 N + : mass number 30.03
- negative ions derived from organic acids C 2 H 3 O 2 ⁇ : mass relative to the count intensity of negative ions of Ni (mass number 57.94) the number 59.01)
- negative ions Ni of Ni -: negative ions derived from phosphoric acid compound to the count intensity of mass number 57.94
- PO 2 -: mass number 62.96 mass of negative ions
- Negative ions derived from borate compounds B 2 O 4 H 3 ⁇ : mass number 89.02 and B 3 O 6 H 4 ⁇ : mass number 133.03
- Average particle size 200 particles are arbitrarily extracted from the scanning electron microscope (SEM) photograph to be measured, the particle size is measured at a magnification of 10,000 times, and the arithmetic average value is the average particle. The diameter was set.
- Thickness of Conductive Layer The conductive particles were cut into two pieces, and the cross section of the cut end was observed and measured with a scanning electron microscope (SEM).
- Example 1 Pretreatment Spherical styrene-acrylate-silica composite resin particles having an average particle diameter of 3.0 ⁇ m were used as core particles. 9 g of the solution was added to a 200 mL aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Roam & Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L. Subsequently, the surface of the core material particles was modified and dispersed by stirring for 30 minutes while applying ultrasonic waves at a liquid temperature of 60 ° C. This aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry.
- aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Roam & Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L.
- the surface of the core material particles was modified and dispersed by stirring for 30 minutes while
- stannous chloride 0.1 g was added to this slurry. After stirring at room temperature for 5 minutes, a sensitization treatment was performed in which tin ions were adsorbed on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry and maintained at 60 ° C. 1.5 mL of a 0.11 mol / L palladium chloride aqueous solution was added to this slurry. The mixture was stirred at 60 ° C. for 5 minutes to perform an activation treatment in which palladium ions were captured on the surface of the core material particles.
- this aqueous solution was filtered, and the core material particles washed once with hot water were made into a 100 mL slurry, 10 mL of 0.5 g / L dimethylamine borane aqueous solution was added, and the mixture was stirred for 2 minutes while applying ultrasonic waves to pretreated the core material. A slurry of particles was obtained.
- the obtained conductive particles were placed in a square container so as to have a thickness of 5 mm. This was placed in a vacuum heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 10 Pa.
- KDF-75 manufactured by Denken Hydental Co., Ltd.
- the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
- Example 2 The vacuum heat treatment (4) in Example 1 was carried out by the following operation.
- the conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 100 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
- Example 3 The vacuum heat treatment (4) in Example 1 was carried out by the following operation.
- the conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 320 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
- Comparative Example 1 The conductive particles obtained by the (3) electroless plating treatment of Example 1 were used as the conductive particles of Comparative Example 1.
- the elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
- Example 2 The following operation was performed instead of (4) vacuum heat treatment in Example 1.
- the conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 260 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
- Example 3 The following operation was performed instead of (4) vacuum heat treatment in Example 1.
- the conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
- Example 4 Pretreatment Spherical styrene-acrylate-silica composite resin particles having an average particle diameter of 3.0 ⁇ m were used as core particles. 9 g of the solution was added to a 200 mL aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Roam & Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L. Subsequently, the surface of the core material particles was modified and dispersed by stirring for 30 minutes while applying ultrasonic waves at a liquid temperature of 60 ° C. This aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry.
- aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Roam & Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L.
- the surface of the core material particles was modified and dispersed by stirring for 30 minutes while
- stannous chloride 0.1 g was added to this slurry. After stirring at room temperature for 5 minutes, a sensitization treatment was performed in which tin ions were adsorbed on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry and maintained at 60 ° C. 1.5 mL of a 0.11 mol / L palladium chloride aqueous solution was added to this slurry. The mixture was stirred at 60 ° C. for 5 minutes to perform an activation treatment in which palladium ions were captured on the surface of the core material particles.
- this aqueous solution was filtered, and the core material particles washed once with hot water were made into a 100 mL slurry, 10 mL of 0.5 g / L dimethylamine borane aqueous solution was added, and the mixture was stirred for 2 minutes while applying ultrasonic waves to pretreated the core material. A slurry of particles was obtained.
- the obtained conductive particles were placed in a square container so as to have a thickness of 5 mm. This was placed in a vacuum heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 10 Pa.
- KDF-75 manufactured by Denken Hydental Co., Ltd.
- the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
- Example 5 The vacuum heat treatment (4) in Example 4 was carried out by the following operation.
- the conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 100 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
- Example 6 The vacuum heat treatment (4) in Example 4 was carried out by the following operation.
- the conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 320 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
- Comparative Example 4 The conductive particles obtained by the (3) electroless plating treatment of Example 4 were used as the conductive particles of Comparative Example 4.
- the elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
- Example 5 The following operation was performed instead of (4) vacuum heat treatment in Example 4.
- the conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 260 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
- Example 6 The following operation was performed instead of (4) vacuum heat treatment in Example 4.
- the conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles.
- the average particle size of the obtained conductive particles was 3.22 ⁇ m, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
- the elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
- the conductive particles obtained in the examples have a smaller increase in volume resistance value than the conductive particles obtained in the comparative example, and are excellent in storage stability and corrosion resistance.
- a conductive material was prepared by the following method, and the storage stability of the conductive material was evaluated by a pressure cooker test.
- An insulating adhesive obtained by mixing 100 parts by mass of an epoxy resin, 150 parts by mass of a curing agent and 70 parts by mass of toluene was mixed with 15 parts by mass of the conductive particles obtained in Examples and Comparative Examples to obtain a paste. This paste was applied onto a silicone treated polyester film using a bar coater and then dried to form a thin film on the film.
- connection resistance value of this connection structure was measured at room temperature (25 ° C., 50% RH). Then, the connection structure was arranged in a closed container, and a pressure cooker test was conducted in which the connection structure was treated in an environment of a temperature of 121 ° C., a relative humidity of 100%, and 2 atm for 10 hours. After the pressure cooker test, the connection resistance value of the connection structure was measured at room temperature (25 ° C., 50% RH). It can be evaluated that the smaller the difference between the connection resistance values before and after the pressure cooker test, the higher the storage stability of the conductive material. The results are shown in Table 6.
- the conductive material obtained in the example has a smaller difference in connection resistance value before and after the pressure cooker test than the conductive material obtained in the comparative example, and is excellent in storage stability. ..
- connection resistance and connection reliability were evaluated by the following methods. 1.0 g of the conductive particles obtained in Examples and Comparative Examples were placed in a vertically standing resin cylinder having an inner diameter of 10 mm, and a load of 2 kN was applied at room temperature (25 ° C., 50% RH). The electrical resistance between the upper and lower electrodes was measured, and the initial volume resistance value was obtained. The lower the initial volume resistance value, the more effectively the oxide film formed on the electrode can be eliminated, and it can be evaluated that the connection resistance of the conductive particles is low. Furthermore, the resistance value after holding for 24 hours under the conditions of 85 ° C. and 85% RH was also measured. It can be evaluated that the smaller the difference from the connection resistance value at room temperature, the better the connection reliability of the conductive particles. The results are shown in Table 7.
- the conductive particles obtained in the examples have a lower initial volume resistance value and lower connection resistance than the conductive particles obtained in the comparative example. Further, the conductive particles obtained in the examples had a smaller difference between the initial volume resistance value and the resistance value after 24 hours at 85 ° C. and 85% RH as compared with the conductive particles obtained in the comparative example. It can be seen that the connection reliability is high. In particular, when the conductive particles obtained in Examples 1 and 2 on which the nickel-phosphorus plating layer is formed and the conductive particles obtained in Comparative Example 3 are compared, they are connected by heating under vacuum. It can be seen that conductive particles having low resistance and excellent connection reliability can be obtained.
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Abstract
The present invention provides an electrically conductive particle which exhibits excellent storage stability, excellent corrosion resistance and low connection resistance, and in which a nickel plating layer is formed as an electrically conductive layer on the surface of a core particle. The molar ratio of the amount of carbon relative to the total amount of nickel and phosphorus (C/(Ni+P)) or the molar ratio of the amount of carbon relative to nickel and boron (C/(Ni+B)) is 0.0002-1.65, the molar ratio of the amount of oxygen relative to the total amount of nickel and phosphorus (O/(Ni+P)) or the molar ratio of the amount of oxygen relative to the total amount of nickel and boron (O/(Ni+B)) is 0.0001-1.8, and the molar ratio of phosphorus relative to nickel (P/Ni) or the molar ratio of boron relative to nickel (B/Ni) is 0.003-0.7 in a region within 5 nm in the depth direction from a surface of the electrically conductive layer, as measured using a scanning Auger electron spectroscope.
Description
本発明は、導電性粒子、それを含む導電性材料及びそれを使用した接続構造体に関する。
The present invention relates to conductive particles, a conductive material containing the conductive particles, and a connection structure using the same.
異方性導電フィルムや異方性導電ペーストといった異方性導電材料の導電性材料として用いられる導電性粒子としては、一般に芯材粒子の表面に金属からなる導電層を形成したものが知られており、この導電層により電極や配線間の電気的な接続を行っている。
As the conductive particles used as the conductive material of the anisotropic conductive material such as the anisotropic conductive film and the anisotropic conductive paste, those in which a conductive layer made of metal is formed on the surface of the core material particles are generally known. This conductive layer provides an electrical connection between the electrodes and wiring.
この導電性粒子の導電層としては、無電解めっき法によるニッケルめっき皮膜がしばしば用いられているが、目的とする特性を発現させるために、様々な工夫がなされている。その一例として特許文献1には、保存安定性に優れた導電性粒子を得るために、ラジカル重合性化合物、酸性化合物及び水を含む処理液で導電性粒子の表面を処理することが記載されており、これにより、導電性粒子の表面に均一な樹脂皮膜を作製して導電層の活性を抑えることが記載されている。また特許文献2には、導電性粒子の表面の少なくとも一部を被覆する有機金属錯体を備える導電性粒子により、保存安定性などに優れる被覆導電性粒子を提供することが記載されている。
Nickel plating film by electroless plating method is often used as the conductive layer of these conductive particles, but various measures have been taken to develop the desired characteristics. As an example, Patent Document 1 describes treating the surface of conductive particles with a treatment liquid containing a radically polymerizable compound, an acidic compound and water in order to obtain conductive particles having excellent storage stability. It is described that a uniform resin film is formed on the surface of the conductive particles to suppress the activity of the conductive layer. Further, Patent Document 2 describes that a coated conductive particle having excellent storage stability and the like is provided by a conductive particle provided with an organometallic complex that covers at least a part of the surface of the conductive particle.
また、優れた保存安定性を有する導電性粒子を得るためには、導電層が高い耐腐食性を有することも必要である。このような技術として、例えば特許文献3では、導電層の表面にリン含有疎水性基を導入した導電性粒子が記載されている。これにより導電層の酸化を抑制することができ、耐腐食性を向上させることができるとされている。また特許文献4には、ニッケルとリンとタングステンを含む導電層において、導電層の厚み内側の領域にリン、外側の領域にタングステンを特定範囲の量で含有させた導電性粒子が記載されている。これにより酸の存在下に晒されても腐食が進みにくいことが報告されている。これらの特許文献では、導電層を改質することで耐腐食性の付与を試みている。
Further, in order to obtain conductive particles having excellent storage stability, it is also necessary for the conductive layer to have high corrosion resistance. As such a technique, for example, Patent Document 3 describes conductive particles in which a phosphorus-containing hydrophobic group is introduced on the surface of a conductive layer. It is said that this can suppress the oxidation of the conductive layer and improve the corrosion resistance. Further, Patent Document 4 describes, in a conductive layer containing nickel, phosphorus and tungsten, conductive particles containing phosphorus in a region inside the thickness of the conductive layer and tungsten in a region outside the thickness in a specific range. .. It has been reported that this makes it difficult for corrosion to proceed even when exposed to the presence of acid. In these patent documents, an attempt is made to impart corrosion resistance by modifying the conductive layer.
一般的に導電性粒子の保存安定性は、金属の酸化などの導電層表面の劣化を抑えることにより達成できることから、前記特許文献1ないし特許文献4のような方法により導電層表面及びその近傍を保護することが行われているが、異方性導電フィルムや異方性導電ペーストといった異方性導電材料としたときに、導電層表面が保護されていることに起因して接続抵抗が増してしまうことが問題となっていた。
したがって本発明の目的は、優れた保存安定性、優れた耐腐食性及び低い接続抵抗を兼ね備えた導電性粒子を提供することにある。 In general, the storage stability of the conductive particles can be achieved by suppressing the deterioration of the surface of the conductive layer such as the oxidation of the metal. Although protection is performed, when an anisotropic conductive material such as an anisotropic conductive film or an anisotropic conductive paste is used, the connection resistance increases due to the protection of the surface of the conductive layer. It was a problem to get rid of it.
Therefore, an object of the present invention is to provide conductive particles having excellent storage stability, excellent corrosion resistance and low connection resistance.
したがって本発明の目的は、優れた保存安定性、優れた耐腐食性及び低い接続抵抗を兼ね備えた導電性粒子を提供することにある。 In general, the storage stability of the conductive particles can be achieved by suppressing the deterioration of the surface of the conductive layer such as the oxidation of the metal. Although protection is performed, when an anisotropic conductive material such as an anisotropic conductive film or an anisotropic conductive paste is used, the connection resistance increases due to the protection of the surface of the conductive layer. It was a problem to get rid of it.
Therefore, an object of the present invention is to provide conductive particles having excellent storage stability, excellent corrosion resistance and low connection resistance.
本発明者らは、ニッケルめっき層からなる導電層の表層に存在する特定元素が、ニッケルとリン又はホウ素の合計量に対して一定の割合で存在すると、保存安定性及び耐腐食性に優れることを見出し、本発明を完成した。
The present inventors are excellent in storage stability and corrosion resistance when the specific element present on the surface layer of the conductive layer composed of the nickel plating layer is present in a constant ratio with respect to the total amount of nickel and phosphorus or boron. And completed the present invention.
すなわち本発明は、芯材粒子の表面に導電層としてのニッケルめっき層が形成されてなる導電性粒子において、走査型オージェ電子分光分析装置により測定した、前記導電層の表面から深さ方向5nm以内におけるニッケルとリンの合計に対する炭素のモル比(C/(Ni+P))、又はニッケルとホウ素の合計に対する炭素のモル比(C/(Ni+B))が0.0002以上1.65以下であり、ニッケルとリンの合計に対する酸素のモル比(O/(Ni+P))、又はニッケルとホウ素の合計に対する酸素のモル比(O/(Ni+B))が0.0001以上2.0以下であり、且つ、ニッケルに対するリンのモル比(P/Ni)、又はニッケルに対するホウ素のモル比(B/Ni)が0.003以上0.7以下である導電性粒子を提供するものである。
That is, in the present invention, in a conductive particle in which a nickel plating layer as a conductive layer is formed on the surface of the core material particles, within 5 nm in the depth direction from the surface of the conductive layer measured by a scanning Auger electron spectroscopic analyzer. The molar ratio of carbon to the total of nickel and phosphorus (C / (Ni + P)) or the molar ratio of carbon to the total of nickel and boron (C / (Ni + B)) is 0.0002 or more and 1.65 or less, and nickel. The molar ratio of oxygen to the total of nickel and phosphorus (O / (Ni + P)) or the molar ratio of oxygen to the total of nickel and boron (O / (Ni + B)) is 0.0001 or more and 2.0 or less, and nickel. It provides conductive particles in which the molar ratio of phosphorus to nickel (P / Ni) or the molar ratio of boron to nickel (B / Ni) is 0.003 or more and 0.7 or less.
また本発明は、芯材粒子の表面に導電層としてのニッケルめっき層が形成されてなる導電性粒子において、飛行時間型二次イオン質量分析装置(TOF-SIMS)により測定した、前記導電層の表面から深さ方向1nm以内におけるNi+の正イオンのカウント強度に対するCH4N+の正イオンのカウント強度(CH4N+/Ni+)が0.1以下であるか、Ni-の負イオンのカウント強度に対するC2H3O2
-の負イオンのカウント強度(C2H3O2
-/Ni-)が10.0以下であるか、Ni-の負イオンのカウント強度に対するPO2
-の負イオンのカウント強度(PO2
-/Ni-)が10.0以下であるか、又はNi-の負イオンのカウント強度に対するB2O4H3
-及びB3O6H4
-の負イオンのカウント強度((B2O4H3
-+B3O6H4
-)/Ni-)が10.0以下である導電性粒子を提供するものである。
Further, according to the present invention, in a conductive particle in which a nickel-plated layer as a conductive layer is formed on the surface of the core material particle, the conductive layer is measured by a flight time type secondary ion mass spectrometer (TOF-SIMS). The count intensity of CH 4 N + positive ions (CH 4 N + / Ni + ) with respect to the count intensity of Ni + positive ions within 1 nm in the depth direction from the surface is 0.1 or less, or Ni − negative ions. count intensity for C 2 H 3 O 2 - negative ion count strength (C 2 H 3 O 2 - / Ni -) or is 10.0, Ni - PO of relative counts the intensity of the negative-ion - negative ion count strength (PO 2 - / Ni -) or is 10.0 or less, or Ni - negative B against ion count strength 2 O 4 H 3 of - and B 3 O 6 H 4 - negative It provides conductive particles having an ion count intensity ((B 2 O 4 H 3 − + B 3 O 6 H 4 − ) / Ni − ) of 10.0 or less.
また本発明は、芯材粒子の表面に導電層を形成して得られた導電性粒子を、1000Pa以下の真空下、温度200~600℃で加熱する工程を有する導電性粒子の製造方法を提供するものである。
The present invention also provides a method for producing conductive particles, which comprises a step of heating the conductive particles obtained by forming a conductive layer on the surface of the core material particles at a temperature of 200 to 600 ° C. under a vacuum of 1000 Pa or less. It is something to do.
本発明によれば、優れた保存安定性、優れた耐腐食性及び低い接続抵抗を兼ね備えた導電性粒子を提供することができる。
According to the present invention, it is possible to provide conductive particles having excellent storage stability, excellent corrosion resistance and low connection resistance.
本発明の導電性粒子は、芯材粒子の表面に導電層としてのニッケルめっき層が形成されたものであり、導電層の表面から5nm以内におけるニッケルとリンの合計に対する炭素のモル比(C/(Ni+P))、又はニッケルとホウ素の合計に対する炭素のモル比(C/(Ni+B))が0.0002以上1.65以下、好ましくは0.0005以上1.55以下であり、ニッケルとリンの合計に対する酸素のモル比(O/(Ni+P))、又はニッケルとホウ素の合計に対する酸素のモル比(O/(Ni+B))が0.0001以上2.0以下、好ましくは0.0003以上1.8以下であり、且つ、ニッケルに対するリンのモル比(P/Ni)、又はニッケルに対するホウ素のモル比(P/Ni)が0.003以上0.7以下、好ましくは0.005以上0.5である。
The conductive particles of the present invention have a nickel plating layer as a conductive layer formed on the surface of the core material particles, and the molar ratio of carbon to the total of nickel and phosphorus within 5 nm from the surface of the conductive layer (C /). (Ni + P)) or the molar ratio of carbon to the total of nickel and boron (C / (Ni + B)) is 0.0002 or more and 1.65 or less, preferably 0.0005 or more and 1.55 or less, and nickel and phosphorus. The molar ratio of oxygen to the total (O / (Ni + P)) or the molar ratio of oxygen to the total of nickel and boron (O / (Ni + B)) is 0.0001 or more and 2.0 or less, preferably 0.0003 or more. 8 or less, and the molar ratio of phosphorus to nickel (P / Ni) or the molar ratio of boron to nickel (P / Ni) is 0.003 or more and 0.7 or less, preferably 0.005 or more and 0.5. Is.
本発明において、前記の各元素のモル比は、走査型オージェ電子分光分析装置(以下、AES分析装置ということもある。)を用いて、導電層の表面から5nm以内の炭素、酸素、ニッケル及びリン又はホウ素の原子%を計測し、ニッケルとリン又はニッケルとホウ素の計測値の合計に対する炭素及び酸素の各元素の計測値、並びにニッケルの計測値に対するリン又はホウ素の計測値を算出したものである。AES分析装置としては、例えば、アルバック・ファイ社製 PHI-710を用いることができる。
In the present invention, the molar ratio of each of the above elements is carbon, oxygen, nickel and carbon, oxygen, nickel within 5 nm from the surface of the conductive layer using a scanning Auger electron spectroscopic analyzer (hereinafter, also referred to as an AES analyzer). The atomic% of phosphorus or boron was measured, and the measured values of each element of carbon and oxygen with respect to the total measured values of nickel and phosphorus or nickel and boron were calculated, and the measured values of phosphorus or boron with respect to the measured values of nickel were calculated. be. As the AES analyzer, for example, PHI-710 manufactured by ULVAC-PHI Co., Ltd. can be used.
ニッケルとリン又はニッケルとホウ素の合計に対する炭素及び酸素の各元素のモル比、及び、ニッケルに対するリン又はホウ素のモル比が上記範囲の下限未満であると、結晶構造部分が多くなりすぎて腐食の開始点となることから保存安定性が悪くなり、上記範囲の上限を超えるとアモルファス構造部分が多くなりすぎて接続抵抗が高くなる。
If the molar ratio of each element of carbon and oxygen to the total of nickel and phosphorus or nickel and boron and the molar ratio of phosphorus or boron to nickel are less than the lower limit of the above range, the crystal structure portion becomes too large and corrosion occurs. Since it becomes a starting point, storage stability deteriorates, and if the upper limit of the above range is exceeded, the number of amorphous structural portions becomes too large and the connection resistance becomes high.
また本発明の導電性粒子は、芯材粒子の表面に導電層としてのニッケルめっき層が形成されたものであり、飛行時間型二次イオン質量分析装置(以下、TOF-SIMSということもある)により測定した、導電層の表面から1nm以内におけるNi+の正イオンのカウント強度に対するCH4N+の正イオンのカウント強度(CH4N+/Ni+)が0.1以下、好ましくは0.05以下であるか、Ni-の負イオンのカウント強度に対するC2H3O2
-の負イオンのカウント強度(C2H3O2
-/Ni-)が10.0以下、好ましくは9.0以下であるか、Ni-の負イオンのカウント強度に対するPO2
-の負イオンのカウント強度(PO2
-/Ni-)が10.0以下、好ましくは9.0以下であるか、又はNi-の負イオンのカウント強度に対するB2O4H3
-及びB3O6H4
-の負イオンのカウント強度((B2O4H3
-+B3O6H4
-)/Ni-)が10.0以下、好ましくは9.0以下である。TOF-SIMSとしては、例えば、ION-TOF社製 TOF-SIMS5型を用いることができる。
Further, the conductive particles of the present invention have a nickel-plated layer as a conductive layer formed on the surface of the core material particles, and are a flight time type secondary ion mass spectrometer (hereinafter, also referred to as TOF-SIMS). The count intensity of CH 4 N + positive ions (CH 4 N + / Ni + ) with respect to the count intensity of Ni + positive ions within 1 nm from the surface of the conductive layer measured by is 0.1 or less, preferably 0. 05 or less either, Ni - C 2 H 3 O 2 for counting the strength of the negative ion - negative ion count strength of (C 2 H 3 O 2 - / Ni -) 10.0 or less, preferably 9. 0 or less than, Ni - the PO 2 for counting the strength of the negative ion - negative ion count strength (PO 2 - / Ni -) 10.0 or less, or preferably 9.0 or less, or Ni - the B 2 O 4 for the count intensity of the negative ion H 3 - and B 3 O 6 H 4 - negative ion count strength ((B 2 O 4 H 3 - + B 3 O 6 H 4 -) / Ni -) Is 10.0 or less, preferably 9.0 or less. As the TOF-SIMS, for example, TOF-SIMS5 type manufactured by ION-TOF can be used.
Ni+の正イオンのカウント強度に対するCH4N+の正イオンのカウント強度(CH4N+/Ni+)、Ni-の負イオンのカウント強度に対するC2H3O2
-の負イオンのカウント強度(C2H3O2
-/Ni-)、Ni-の負イオンのカウント強度に対するPO2
-の負イオンのカウント強度(PO2
-/Ni-)、又はNi-の負イオンのカウント強度に対するB2O4H3
-及びB3O6H4
-の負イオンのカウント強度((B2O4H3
-+B3O6H4
-)/Ni-)が上記範囲以下であると、腐食が抑制され、加圧接続後の接続抵抗が低くなるため好ましい。反対に上記範囲を超えると、導電層が腐食しやすくなり、加圧接続後の接続信頼性に影響を及ぼす。
Ni + CH 4 N + of positive ions count intensity for counting the strength of the positive ions (CH 4 N + / Ni + ), Ni - C 2 H 3 O 2 for counting the strength of the negative ion - counts of negative ions Intensity (C 2 H 3 O 2 − / Ni − ), PO 2 − negative ion count intensity relative to Ni − negative ion count intensity (PO 2 − / Ni − ), or Ni − negative ion count intensity and B 3 O 6 H 4 - - negative ion count strength ((B 2 O 4 H 3 - + B 3 O 6 H 4 -) / Ni -) B 2 O 4 H 3 for the is less than the above range This is preferable because corrosion is suppressed and the connection resistance after pressure connection is low. On the contrary, if it exceeds the above range, the conductive layer is likely to be corroded, which affects the connection reliability after the pressure connection.
前記CH4N+はアミン化合物由来の正イオンであり、前記C2H3O2
-は有機酸由来の負イオンであり、前記PO2
-はリン酸化合物由来の負イオン、前記B2O4H3
-及びB3O6H4
-はホウ酸化合物由来の負イオンである。
前記アミン化合物、前記有機酸、前記リン酸化合物、及び前記ホウ酸化合物は、後述する本発明の導電性粒子の製造方法を実施する際の無電解めっき液中に含まれる錯化剤、分散剤、還元剤、pH緩衝剤、及び界面活性剤等に由来するものである。 The CH 4 N + is a positive ion from amine compounds, the C 2 H 3 O 2 - is a negative ion derived from the organic acid, the PO 2 - the negative ions from phosphoric acid compound, wherein the B 2 O 4 H 3 - and B 3 O 6 H 4 - is a negative ion derived from boric acid compound.
The amine compound, the organic acid, the phosphoric acid compound, and the boric acid compound are complexing agents and dispersants contained in the electroless plating solution when the method for producing conductive particles of the present invention described later is carried out. , A reducing agent, a pH buffering agent, a surfactant and the like.
前記アミン化合物、前記有機酸、前記リン酸化合物、及び前記ホウ酸化合物は、後述する本発明の導電性粒子の製造方法を実施する際の無電解めっき液中に含まれる錯化剤、分散剤、還元剤、pH緩衝剤、及び界面活性剤等に由来するものである。 The CH 4 N + is a positive ion from amine compounds, the C 2 H 3 O 2 - is a negative ion derived from the organic acid, the PO 2 - the negative ions from phosphoric acid compound, wherein the B 2 O 4 H 3 - and B 3 O 6 H 4 - is a negative ion derived from boric acid compound.
The amine compound, the organic acid, the phosphoric acid compound, and the boric acid compound are complexing agents and dispersants contained in the electroless plating solution when the method for producing conductive particles of the present invention described later is carried out. , A reducing agent, a pH buffering agent, a surfactant and the like.
前記錯化剤は、ニッケルイオンと安定な錯体を形成することで、水酸化ニッケルのようなニッケル化合物の沈殿を防止し、更に、ニッケルの析出反応を適度な速度とするために有効な成分であり、公知の無電解ニッケルめっき液において用いられている各種の錯化剤を用いることができる。このような錯化剤の具体例としては、酢酸、プロピオン酸、酪酸等のモノカルボン酸及びその可溶性塩、シュウ酸、アジピン酸等のジカルボン酸及びその可溶性塩、リンゴ酸、酒石酸等のオキシカルボン酸及びその可溶性塩、グリシン、アラニン等のアミノカルボン酸及びその可溶性塩、エチレンジアミン四酢酸、バーセノール(N-ヒドロキシエチルエチレンジアミン-N,N’,N’-三酢酸)、クォードロール(N,N,N’,N’-テトラヒドロキシエチルエチレンジアミン)等のエチレンジアミン誘導体及びその可溶性塩、1-ヒドロキシエタン-1,1-ジホスホン酸、エチレンジアミンテトラメチレンホスホン酸等のホスホン酸及びその可溶性塩、ピロリン酸及びその可溶性塩等を挙げることができる。これらの錯化剤は、1種単独で又は2種以上を混合して用いることができる。
The complexing agent is an effective component for preventing the precipitation of nickel compounds such as nickel hydroxide by forming a stable complex with nickel ions, and further for accelerating the precipitation reaction of nickel at an appropriate rate. Yes, various complexing agents used in known electroless nickel plating solutions can be used. Specific examples of such complexing agents include monocarboxylic acids such as acetic acid, propionic acid and butyric acid and their soluble salts, dicarboxylic acids such as oxalic acid and adipic acid and their soluble salts, and oxycarboxylic acids such as malic acid and tartrate acid. Acids and soluble salts thereof, aminocarboxylic acids such as glycine and alanine and soluble salts thereof, ethylenediamine tetraacetic acid, versenol (N-hydroxyethylethylenediamine-N, N', N'-triacetic acid), quadrol (N, N, N', N'-Tetrahydroxyethylethylenediamine) and other ethylenediamine derivatives and their soluble salts, 1-hydroxyethane-1,1-diphosphonic acid, ethylenediaminetetramethylenephosphonic acid and other phosphonic acids and their soluble salts, pyrophosphates and their salts. Soluble salts and the like can be mentioned. These complexing agents can be used alone or in admixture of two or more.
前記アミン化合物としては、メチルアミン、ジメチルアミン、トリメチルアミン、エチルアミン、ジエチルアミン、トリエチルアミン、エチレンジアミン、トリエタノールアミン、N,N-ジイソプロピルエチルアミン、テトラメチルエチレンジアミン、ヘキサメチレンジアミン、などの脂肪族アミン類、フェニルアミン、ベンジルアミン、N-フェニルヒドロキシルアミン、などの芳香族アミン、O-メチルヒドロキシルアミン、O-カルボキシヒドロキシルアミン、などのヒドロキシルアミン類、及び、ピロール、ピラゾール、イミダゾール、ピリジン、オキサゾール、チアゾール、ベンゾチアゾール、トリアゾール、ベンゾトリアゾールなどの複素環式アミンとそのアルカリ金属塩、アラニン、アルギニン、グルタミン、グルタミン酸、グリシン、ロイシン、フェニルアラニン、システィン、ヒスチジン、グルタチオン、メチオニン、アスパラギン、アスパラギン酸、などのアミノ酸類が挙げられる。
Examples of the amine compound include aliphatic amines such as methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, triethanolamine, N, N-diisopropylethylamine, tetramethylethylenediamine and hexamethylenediamine, and phenylamine. , Aromatic amines such as benzylamine, N-phenylhydroxylamine, hydroxylamines such as O-methylhydroxylamine, O-carboxyhydroxylamine, and pyrrole, pyrazole, imidazole, pyridine, oxazole, thiazole, benzothiazole. , Triazole, benzotriazole and other heterocyclic amines and their alkali metal salts, alanine, arginine, glutamine, glutamic acid, glycine, leucine, phenylalanine, cystine, histidine, glutathione, methionine, asparagine, aspartic acid, etc. Will be.
前記有機酸としては、ギ酸、酢酸、プロピオン酸、酪酸、吉草酸、ラウリン酸、トリデシル酸、パルチミン酸、ステアリン酸、などの飽和脂肪カルボン酸及びそのアルカリ金属塩、アクリル酸、メタクリル酸、オレイン酸、リノール酸、α-リノレン酸、などの不飽和脂肪カルボン酸及びそのアルカリ金属塩、シュウ酸、マロン酸、コハク酸、グルタル酸、アジピン酸、などの飽和ジカルボン酸及びそのアルカリ金属塩、マレイン酸、フマル酸、などの不飽和ジカルボン酸及びそのアルカリ金属塩、アコニット酸及びそのアルカリ金属塩、安息香酸、サリチル酸、フタル酸、などの芳香族カルボン酸及びそのアルカリ金属塩、乳酸、グリセリン酸、リンゴ酸、酒石酸、2-ヒドロキシ酪酸、3-ヒドロキシ酪酸、4-ヒドロキシ酪酸、クエン酸、ロイシン酸、パントイン酸、パントテン酸、セレブロン酸などのヒドロキシカルボン酸及びそのアルカリ金属塩、エチレンジアミン四酢酸、エチレンジアミン四酢酸二ナトリウムが挙げられる。
Examples of the organic acid include saturated fatty carboxylic acids such as formic acid, acetic acid, propionic acid, butyric acid, valeric acid, lauric acid, tridecyl acid, partiminic acid and stearic acid, and alkali metal salts thereof, acrylic acid, methacrylic acid and oleic acid. , Linol acid, α-linolenic acid, and other unsaturated fatty carboxylic acids and alkali metal salts thereof, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, and other saturated dicarboxylic acids and alkali metal salts thereof, maleic acid. , Fumaric acid, unsaturated dicarboxylic acids and alkali metal salts thereof, aconitic acid and alkali metal salts thereof, aromatic carboxylic acids such as benzoic acid, salicylic acid, phthalic acid, and alkali metal salts thereof, lactic acid, glyceric acid, apples. Hydroxycarboxylic acids such as acid, tartaric acid, 2-hydroxybutyric acid, 3-hydroxybutyric acid, 4-hydroxybutyric acid, citric acid, leucic acid, pantoic acid, pantothenic acid, celebronic acid and their alkali metal salts, ethylenediamine tetraacetic acid, ethylenediamine tetra Examples include disodium acetate.
前記リン酸化合物としては、亜リン酸、次亜リン酸、リン酸、などのオキシリン酸及びその可溶性塩、ピロリン酸及びその可溶性塩、リン酸モノドデシルエステル等のリン酸エステル及びその可溶性塩、亜リン酸エステルおよびその可溶性塩、ホスホン酸及びその誘導体が挙げられる。このリン酸化合物は、無電解めっき液中に含まれる還元剤の次亜リン酸ナトリウム、次亜リン酸カリウム等のリン系化合物に由来するものである。
Examples of the phosphoric acid compound include oxyphosphoric acid such as phosphoric acid, hypophosphoric acid, and phosphoric acid and its soluble salt, pyrophosphoric acid and its soluble salt, and phosphoric acid ester such as phosphoric acid monododecyl ester and its soluble salt. Examples include phosphoric acid esters and soluble salts thereof, phosphonic acid and derivatives thereof. This phosphoric acid compound is derived from a phosphorus-based compound such as sodium hypophosphite and potassium hypophosphite, which are reducing agents contained in the electroless plating solution.
前記ホウ酸化合物としては、無水ホウ酸、ピロホウ酸、オルトホウ酸及びその誘導体が挙げられる。このホウ酸化合物は、無電解めっき液中に含まれる還元剤のメチルヘキサボラン、ジメチルアミンボラン、ジエチルアミンボラン、モルホリンボラン、ピリジンアミンボラン、ピペリジンボラン、エチレンジアミンボラン、エチレンジアミンビスボラン、t-ブチルアミンボラン、イミダゾールボラン、メトキシエチルアミンボラン、水素化ホウ素ナトリウム、水素化ホウ素カリウム等のホウ素系化合物に由来するものである。
Examples of the boric acid compound include boric acid anhydride, pyroboric acid, orthoboric acid and derivatives thereof. This borate compound contains the reducing agents methylhexaborane, dimethylamineborane, diethylamineborane, morpholinborane, pyridineamineborane, piperidineborane, ethylenediamineborane, ethylenediaminebisborane, t-butylamineborane, which are contained in the electroless plating solution. It is derived from boron-based compounds such as imidazole borane, methoxyethylamine borane, sodium boron hydride, and potassium boron hydride.
本発明の導電性粒子は、芯材粒子の表面に導電層が形成されてなるものである。
前記芯材粒子としては、粒子状であれば、無機物であっても有機物であっても特に制限なく用いることができる。無機物の芯材粒子としては、金、銀、銅、ニッケル、パラジウム、ハンダ等の金属粒子、合金、ガラス、セラミック、シリカ、金属又は非金属の酸化物(含水物も含む)、アルミノ珪酸塩を含む金属珪酸塩、金属炭化物、金属窒化物、金属炭酸塩、金属硫酸塩、金属リン酸塩、金属硫化物、金属酸塩、金属ハロゲン化物及び炭素等が挙げられる。一方、有機物の芯材粒子としては、例えば、天然繊維、天然樹脂、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリスチレン、ポリブテン、ポリアミド、ポリアクリル酸エステル、ポリアクリルニトリル、ポリアセタール、アイオノマー、ポリエステル等の熱可塑性樹脂、アルキッド樹脂、フェノール樹脂、尿素樹脂、ベンゾグアナミン樹脂、メラミン樹脂、キシレン樹脂、シリコーン樹脂、エポキシ樹脂、ジアリルフタレート樹脂等の熱硬化性樹脂が挙げられる。これらは単独で使用してもよいし、2種以上を組み合わせて使用してもよい。 The conductive particles of the present invention are formed by forming a conductive layer on the surface of the core material particles.
The core material particles may be inorganic or organic as long as they are in the form of particles, and can be used without particular limitation. Examples of the inorganic core particles include metal particles such as gold, silver, copper, nickel, palladium, and solder, alloys, glass, ceramics, silica, metal or non-metal oxides (including hydrous), and aluminosilicates. Examples thereof include metal silicates, metal carbides, metal nitrides, metal carbonates, metal sulfates, metal phosphates, metal sulfides, metal acid salts, metal halides and carbons. On the other hand, examples of the organic core particles include thermoplastics such as natural fibers, natural resins, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polybutene, polyamide, polyacrylic acid ester, polyacrylic nitrile, polyacetal, ionomer, and polyester. Examples thereof include thermosetting resins such as resins, alkyd resins, phenol resins, urea resins, benzoguanamine resins, melamine resins, xylene resins, silicone resins, epoxy resins and diallyl phthalate resins. These may be used alone or in combination of two or more.
前記芯材粒子としては、粒子状であれば、無機物であっても有機物であっても特に制限なく用いることができる。無機物の芯材粒子としては、金、銀、銅、ニッケル、パラジウム、ハンダ等の金属粒子、合金、ガラス、セラミック、シリカ、金属又は非金属の酸化物(含水物も含む)、アルミノ珪酸塩を含む金属珪酸塩、金属炭化物、金属窒化物、金属炭酸塩、金属硫酸塩、金属リン酸塩、金属硫化物、金属酸塩、金属ハロゲン化物及び炭素等が挙げられる。一方、有機物の芯材粒子としては、例えば、天然繊維、天然樹脂、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリスチレン、ポリブテン、ポリアミド、ポリアクリル酸エステル、ポリアクリルニトリル、ポリアセタール、アイオノマー、ポリエステル等の熱可塑性樹脂、アルキッド樹脂、フェノール樹脂、尿素樹脂、ベンゾグアナミン樹脂、メラミン樹脂、キシレン樹脂、シリコーン樹脂、エポキシ樹脂、ジアリルフタレート樹脂等の熱硬化性樹脂が挙げられる。これらは単独で使用してもよいし、2種以上を組み合わせて使用してもよい。 The conductive particles of the present invention are formed by forming a conductive layer on the surface of the core material particles.
The core material particles may be inorganic or organic as long as they are in the form of particles, and can be used without particular limitation. Examples of the inorganic core particles include metal particles such as gold, silver, copper, nickel, palladium, and solder, alloys, glass, ceramics, silica, metal or non-metal oxides (including hydrous), and aluminosilicates. Examples thereof include metal silicates, metal carbides, metal nitrides, metal carbonates, metal sulfates, metal phosphates, metal sulfides, metal acid salts, metal halides and carbons. On the other hand, examples of the organic core particles include thermoplastics such as natural fibers, natural resins, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polybutene, polyamide, polyacrylic acid ester, polyacrylic nitrile, polyacetal, ionomer, and polyester. Examples thereof include thermosetting resins such as resins, alkyd resins, phenol resins, urea resins, benzoguanamine resins, melamine resins, xylene resins, silicone resins, epoxy resins and diallyl phthalate resins. These may be used alone or in combination of two or more.
芯材粒子は、上述した無機物及び有機物のいずれか一方からなる材質に代えて、無機物及び有機物の双方からなる材質で構成されていてもよい。芯材粒子が無機物及び有機物の双方からなる材質で構成されている場合、芯材粒子における無機物及び有機物の存在態様としては、例えば、無機物からなるコアと、該コアの表面を被覆する無機物からなるシェルとを備える態様、あるいは、有機物からなるコアと、該コアの表面を被覆する無機物からなるシェルとを備える態様等のコアシェル型の構成等が挙げられる。これらのほか、一つの芯材粒子中に、無機物と有機物が混合されているか、あるいはランダムに融合しているブレンド型の構成等が挙げられる。
The core material particles may be composed of a material composed of both an inorganic substance and an organic substance, instead of the material composed of either the above-mentioned inorganic substance or the organic substance. When the core material particles are made of a material composed of both an inorganic substance and an organic substance, the existence mode of the inorganic substance and the organic substance in the core material particles is, for example, a core made of the inorganic substance and an inorganic substance covering the surface of the core. Examples thereof include a core-shell type configuration including a mode including a shell, or a mode including a core made of an organic substance and a shell made of an inorganic substance covering the surface of the core. In addition to these, a blend type structure in which an inorganic substance and an organic substance are mixed or randomly fused in one core material particle can be mentioned.
芯材粒子は、有機物或いは無機物及び有機物の双方からなる材質で構成されていることが好ましく、無機物及び有機物の双方からなる材質で構成されていることがより好ましい。前記無機物は、ガラス、セラミック、シリカ、金属又は非金属の酸化物(含水物も含む)、アルミノ珪酸塩を含む金属珪酸塩、金属炭化物、金属窒化物、金属炭酸塩、金属硫酸塩、金属リン酸塩、金属硫化物、金属酸塩、金属ハロゲン化物及び炭素であることが好ましい。また、前記有機物は天然繊維、天然樹脂、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリスチレン、ポリブテン、ポリアミド、ポリアクリル酸エステル、ポリアクリルニトリル、ポリアセタール、アイオノマー、ポリエステル等の熱可塑性樹脂であることが好ましい。このような材質からなる芯材を用いることによって、粒子同士の分散安定性を高めることができ、また、電子回路の電気的接続の際に、適度な弾性を発現させて導通を高めることができる。
The core material particles are preferably made of an organic substance or a material made of both an inorganic substance and an organic substance, and more preferably made of a material made of both an inorganic substance and an organic substance. The inorganic substances include glass, ceramics, silica, metal or non-metal oxides (including hydrous), metal silicates including aluminosilicates, metal carbides, metal nitrides, metal carbonates, metal sulfates, and metal phosphorus. Preferably acid salts, metal sulfides, metal acid salts, metal halides and carbons. Further, the organic substance is preferably a thermoplastic resin such as natural fiber, natural resin, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polybutene, polyamide, polyacrylic acid ester, polyacrylic nitrile, polyacetal, ionomer, polyester and the like. By using a core material made of such a material, it is possible to improve the dispersion stability between particles, and it is possible to develop appropriate elasticity and enhance continuity at the time of electrical connection of an electronic circuit. ..
芯材粒子として有機物を用いる場合、ガラス転移温度を有しないか、又は、ガラス転移温度が100℃超であることが、芯材粒子の形状が維持されやすいことや金属皮膜を形成する工程において芯材粒子の形状を維持しやすい点から好ましい。ガラス転移温度は、例えば、示差走査熱量測定(DSC)により得られるDSC曲線のベースラインシフト部分における元のベースラインと変曲点の接線の交点として求めることができる。
When an organic substance is used as the core material particles, the fact that the core material particles do not have a glass transition temperature or the glass transition temperature exceeds 100 ° C. makes it easy to maintain the shape of the core material particles and the core in the process of forming a metal film. It is preferable because it is easy to maintain the shape of the material particles. The glass transition temperature can be determined, for example, as the intersection of the tangents of the original baseline and the inflection in the baseline shift portion of the DSC curve obtained by differential scanning calorimetry (DSC).
芯材粒子として有機物を用いる場合において、その有機物が高度に架橋した樹脂であるときは、前記方法にて200℃までガラス転移温度の測定を試みても、ベースラインシフトはほとんど観測されない。本明細書中ではこのような粒子を、ガラス転移温度を有しない粒子ともいい、本発明においては、このような芯材粒子を用いてもよい。ガラス転移温度を有しない芯材粒子材料の具体例としては、前記で例示した有機物を構成する単量体に架橋性の単量体を併用して共重合させて得ることができる。架橋性の単量体としては、テトラメチレンジ(メタ)アクリレート、エチレングリコールジ(メタ)アクリレート、ポリエチレングリコールジ(メタ)アクリレート、ポリプロピレングリコールジ(メタ)アクリレート、エチレンオキシドジ(メタ)アクリレート、テトラエチレンオキシド(メタ)アクリレート、1,6-ヘキサンジ(メタ)アクリレート、ネオペンチルグリコールジ(メタ)アクリレート、1,9-ノナンジオールジ(メタ)アクリレート、トリメテロールプロパントリ(メタ)アクリレート、テトラメチロールメタンジ(メタ)アクリレート、テトラメチロールメタントリ(メタ)アクリレート、テトラメチロールメタンテトラ(メタ)アクリレート、テトラメチロールプロパンテトラ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、グリセロールジ(メタ)アクリレート、グリセロールトリジ(メタ)アクリレート等の多官能(メタ)アクリレート、ジビニルベンゼン、ジビニルトルエン等の多官能ビニル系単量体、ビニルトリメトキシシラン、トリメトキシシリルスチレン、γ-(メタ)アクリロキシプロピルトリメトキシシラン等のシラン含有系単量体、トリアリルイソシアヌレート、ジアリルフタレート、ジアリルアクリルアミド、ジアリルエーテル等の単量体が挙げられる。特にCOG(Chip on Glass)分野ではこのような硬質な有機材料による芯材粒子が多く使用される。
When an organic substance is used as the core material particles and the organic substance is a highly crosslinked resin, almost no baseline shift is observed even if the glass transition temperature is measured up to 200 ° C. by the above method. In the present specification, such particles are also referred to as particles having no glass transition temperature, and in the present invention, such core material particles may be used. As a specific example of the core material having no glass transition temperature, it can be obtained by copolymerizing the monomer constituting the organic substance exemplified above in combination with the crosslinkable monomer. Examples of the crosslinkable monomer include tetramethylene di (meth) acrylate, ethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, ethylene oxide di (meth) acrylate, and tetraethylene oxide. (Meta) acrylate, 1,6-hexanedi (meth) acrylate, neopentyl glycol di (meth) acrylate, 1,9-nonandiol di (meth) acrylate, trimeterol propanthry (meth) acrylate, tetramethylol methandi (meth) Meta) acrylate, tetramethylol methanetri (meth) acrylate, tetramethylol methanetetra (meth) acrylate, tetramethylol propanetetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol di (meth) acrylate, glycerol tridi (meth) acrylate Polyfunctional (meth) acrylates such as meth) acrylates, polyfunctional vinyl monomers such as divinylbenzene and divinyltoluene, vinyltrimethoxysilane, trimethoxysilylstyrene, γ- (meth) acryloxypropyltrimethoxysilane, etc. Examples thereof include silane-containing monomers, triallyl isocyanurates, diallyl phthalates, diallyl acrylamides, diallyl ethers and the like. In particular, in the field of COG (Chip on Glass), core material particles made of such a hard organic material are often used.
芯材粒子の形状に特に制限はない。一般に、芯材粒子は球状である。しかし、芯材粒子は球状以外の形状、例えば、繊維状、中空状、板状又は針状であってもよく、その表面に多数の突起を有するもの又は不定形のものであってもよい。本発明においては、充填性に優れる、金属を被覆しやすいといった点で、球状の芯材粒子が好ましい。
There are no particular restrictions on the shape of the core material particles. Generally, the core material particles are spherical. However, the core material particles may have a shape other than a spherical shape, for example, a fibrous shape, a hollow shape, a plate shape, or a needle shape, and may have a large number of protrusions on the surface thereof or an amorphous shape. In the present invention, spherical core material particles are preferable in terms of excellent filling property and easy coating with metal.
芯材粒子の表面に形成される導電層は、導電性を有する金属からなるものである。導電層構成する金属としては、例えば、金、白金、銀、銅、鉄、亜鉛、ニッケル、スズ、鉛、アンチモン、ビスマス、コバルト、インジウム、チタン、ゲルマニウム、アルミニウム、クロム、パラジウム、タングステン、モリブデン、カルシウム、マグネシウム、ロジウム、ナトリウム、イリジウム、ベリリウム、ルテニウム、カリウム、カドミウム、オスミウム、リチウム、ルビジウム、ガリウム、タリウム、タンタル、セシウム、トリウム、ストロンチウム、ポロニウム、ジルコニウム、バリウム、マンガン等の金属又はこれらの合金のほか、ITO、ハンダ等の金属化合物等が挙げられる。なかでも金、銀、銅、ニッケル、パラジウム、ロジウム又はハンダが、電気抵抗が少ないため好ましく、とりわけ、ニッケル、金、ニッケル合金又は金合金が好適に用いられる。金属は1種でもよく、2種以上を組み合わせて用いることもできる。
The conductive layer formed on the surface of the core material particles is made of a conductive metal. Examples of the metal constituting the conductive layer include gold, platinum, silver, copper, iron, zinc, nickel, tin, lead, antimony, bismuth, cobalt, indium, titanium, germanium, aluminum, chromium, palladium, tungsten, molybdenum, and the like. Metals such as calcium, magnesium, rhodium, sodium, iridium, beryllium, ruthenium, potassium, cadmium, osmium, lithium, rubidium, gallium, tarium, tantalum, cesium, thorium, strontium, poronium, zirconium, barium, manganese or alloys thereof. In addition, metal compounds such as ITO and solder can be mentioned. Of these, gold, silver, copper, nickel, palladium, rhodium or solder is preferable because of its low electrical resistance, and nickel, gold, nickel alloy or gold alloy is particularly preferably used. The metal may be one kind, or two or more kinds may be used in combination.
導電層は、単層構造であっても、複数層からなる積層構造であってもよい。複数層からなる積層構造である場合には、最表層が、ニッケル、金、銀、銅、パラジウム、ニッケル合金、金合金、銀合金、銅合金及びパラジウム合金から選ばれる少なくとも1種であることが好ましい。
本発明の導電性粒子は、導電層の最表層がニッケル-リンめっき層又はニッケル-ホウ素めっき層である。 The conductive layer may have a single-layer structure or a laminated structure composed of a plurality of layers. In the case of a laminated structure consisting of a plurality of layers, the outermost layer may be at least one selected from nickel, gold, silver, copper, palladium, nickel alloy, gold alloy, silver alloy, copper alloy and palladium alloy. preferable.
In the conductive particles of the present invention, the outermost surface layer of the conductive layer is a nickel-phosphorus plating layer or a nickel-boron plating layer.
本発明の導電性粒子は、導電層の最表層がニッケル-リンめっき層又はニッケル-ホウ素めっき層である。 The conductive layer may have a single-layer structure or a laminated structure composed of a plurality of layers. In the case of a laminated structure consisting of a plurality of layers, the outermost layer may be at least one selected from nickel, gold, silver, copper, palladium, nickel alloy, gold alloy, silver alloy, copper alloy and palladium alloy. preferable.
In the conductive particles of the present invention, the outermost surface layer of the conductive layer is a nickel-phosphorus plating layer or a nickel-boron plating layer.
また導電層は、芯材粒子の表面全体を被覆していなくてもよく、その一部のみを被覆していてもよい。芯材粒子の表面の一部のみを被覆している場合は、被覆部位が連続していてもよく、例えばアイランド状に不連続に被覆していてもよい。
Further, the conductive layer may not cover the entire surface of the core material particles, or may cover only a part thereof. When only a part of the surface of the core material particles is covered, the coated portions may be continuous, for example, may be discontinuously covered in an island shape.
導電層の厚みは、5nm以上2,000nm以下であることが好ましく、10nm以上1,500nm以下であることがより好ましい。導電層の厚みが上記範囲内にあることで、電気特性に優れつつ保存安定性にも優れたものとなる。導電性粒子が後述する突起を有する場合、突起の高さは、ここでいう導電層の厚みに含まないものとする。なお、本発明において、導電層の厚みは、測定対象の粒子を2つに切断し、その切り口の断面を走査型電子顕微鏡(Scanning Electron Microscope:SEM)で観察して測定することができる。
The thickness of the conductive layer is preferably 5 nm or more and 2,000 nm or less, and more preferably 10 nm or more and 1,500 nm or less. When the thickness of the conductive layer is within the above range, the electrical characteristics are excellent and the storage stability is also excellent. When the conductive particles have protrusions described later, the height of the protrusions is not included in the thickness of the conductive layer referred to here. In the present invention, the thickness of the conductive layer can be measured by cutting the particles to be measured into two pieces and observing the cross section of the cut end with a scanning electron microscope (SEM).
導電性粒子の平均粒子径は、好ましくは0.1μm以上50μm以下、より好ましくは1μm以上30μm以下である。導電性粒子の平均粒子径が上記範囲内であることで、対向電極間とは異なる方向での短絡を発生させることなく、対向電極間での導通を確保しやすい。なお、本発明において、導電性粒子の平均粒子径は、SEM観察により測定した値である。具体的には、導電性粒子の平均粒子径は実施例に記載の方法にて測定される。なお、粒子径は、円形の導電性粒子像の径である。導電性粒子が球状でない場合、粒子径は、導電性粒子像を横断する線分のうち最も大きい長さ(最大長さ)をいう。
The average particle size of the conductive particles is preferably 0.1 μm or more and 50 μm or less, and more preferably 1 μm or more and 30 μm or less. When the average particle size of the conductive particles is within the above range, it is easy to secure conduction between the counter electrodes without causing a short circuit in a direction different from that between the counter electrodes. In the present invention, the average particle size of the conductive particles is a value measured by SEM observation. Specifically, the average particle size of the conductive particles is measured by the method described in Examples. The particle diameter is the diameter of a circular conductive particle image. When the conductive particles are not spherical, the particle diameter refers to the largest length (maximum length) of the line segments traversing the conductive particle image.
導電性粒子がその表面に突起を有する場合、すなわち、導電層の外表面が突起を有する形状である場合、突起の高さは、好ましくは20nm以上1,000nm以下、更に好ましくは50nm800nm以下である。突起の数は、導電性粒子の粒径にもよるが、導電性粒子1つ当たり、好ましくは1個以上20,000個以下、更に好ましくは5個以上5,000個以下であることが、導電性粒子の導電性を一層向上させる点で有利である。また、突起の基部の長さは、好ましくは5nm以上1,000nm以下、更に好ましくは10nm以上800nm以下である。突起の基部の長さは、粒子の断面をSEM観察したときに、突起が形成されている部位における導電性粒子の表面に沿う長さをいい、突起の高さは、突起の基部から突起頂点までの最短距離をいう。なお、1つの突起に複数の頂点がある場合は、最も高い頂点をその突起の高さとする。突起の基部の長さ及び突起の高さは、電子顕微鏡により観察された20個の異なる粒子について測定した値の算術平均値とする。
When the conductive particles have protrusions on their surface, that is, when the outer surface of the conductive layer has a protrusion, the height of the protrusions is preferably 20 nm or more and 1,000 nm or less, more preferably 50 nm and 800 nm or less. .. The number of protrusions depends on the particle size of the conductive particles, but is preferably 1 or more and 20,000 or less, and more preferably 5 or more and 5,000 or less per conductive particle. It is advantageous in that the conductivity of the conductive particles is further improved. The length of the base of the protrusion is preferably 5 nm or more and 1,000 nm or less, and more preferably 10 nm or more and 800 nm or less. The length of the base of the protrusion refers to the length along the surface of the conductive particle at the site where the protrusion is formed when the cross section of the particle is observed by SEM, and the height of the protrusion is from the base of the protrusion to the protrusion apex. The shortest distance to. When one protrusion has a plurality of vertices, the highest vertex is the height of the protrusion. The length of the base of the protrusion and the height of the protrusion shall be the arithmetic mean of the values measured for 20 different particles observed by an electron microscope.
導電性粒子の形状は、芯材粒子の形状にもよるが、特に制限はない。例えば、繊維状、中空状、板状又は針状であってもよく、その表面に多数の突起を有するもの又は不定形のものであってもよい。本発明においては、充填性、接続性に優れるという点で、球状又は外表面に多数の突起を有する形状であることが好ましい。
The shape of the conductive particles depends on the shape of the core material particles, but is not particularly limited. For example, it may be fibrous, hollow, plate-shaped or needle-shaped, and may have a large number of protrusions on its surface or may be amorphous. In the present invention, it is preferable that the shape is spherical or has a large number of protrusions on the outer surface in terms of excellent filling property and connectivity.
芯材粒子の表面に導電層を形成する方法としては、蒸着法、スパッタ法、メカノケミカル法、ハイブリダイゼーション法等を利用する乾式法、電解めっき法、無電解めっき法等を利用する湿式法が挙げられる。また、これらの方法を組み合わせて芯材粒子の表面に導電層を形成してもよい。
As a method for forming a conductive layer on the surface of the core material particles, a dry method using a vapor deposition method, a sputtering method, a mechanochemical method, a hybridization method, etc., an electrolytic plating method, a wet method using an electroless plating method, etc. are used. Can be mentioned. Further, a conductive layer may be formed on the surface of the core material particles by combining these methods.
本発明においては、無電解めっき法により、芯材粒子の表面に導電層としてのニッケル-リンめっき層又はニッケル-ホウ素めっき層を形成することが、所望の粒子特性を有する導電性粒子を得るのが容易であるため好ましい。
In the present invention, by forming a nickel-phosphorus plating layer or a nickel-boron plating layer as a conductive layer on the surface of core material particles by an electroless plating method, conductive particles having desired particle characteristics can be obtained. Is preferable because it is easy to use.
以下、導電層としてニッケルめっき層を形成する方法について説明する。
無電解めっき法により芯材粒子の表面に導電層を形成する場合、芯材粒子は、その表面が貴金属イオンの捕捉能を有するか、又は貴金属イオンの捕捉能を有するように表面改質されることが好ましい。貴金属イオンは、パラジウムや銀のイオンであることが好ましい。貴金属イオンの捕捉能を有するとは、貴金属イオンをキレート又は塩として捕捉し得ることをいう。例えば芯材粒子の表面に、アミノ基、イミノ基、アミド基、イミド基、シアノ基、水酸基、ニトリル基、カルボキシル基などが存在する場合には、該芯材粒子の表面は貴金属イオンの捕捉能を有する。貴金属イオンの捕捉能を有するように表面改質する場合には、例えば特開昭61-64882号公報記載の方法を用いることができる。 Hereinafter, a method of forming a nickel plating layer as a conductive layer will be described.
When the conductive layer is formed on the surface of the core material particles by the electroless plating method, the core material particles are surface-modified so that the surface has the ability to capture noble metal ions or has the ability to capture noble metal ions. Is preferable. The noble metal ion is preferably a palladium or silver ion. Having the ability to capture noble metal ions means that the noble metal ions can be captured as a chelate or a salt. For example, when an amino group, an imino group, an amide group, an imide group, a cyano group, a hydroxyl group, a nitrile group, a carboxyl group, etc. are present on the surface of the core material particles, the surface of the core material particles has an ability to capture noble metal ions. Have. When the surface is modified so as to have the ability to capture noble metal ions, for example, the method described in JP-A-61-64882 can be used.
無電解めっき法により芯材粒子の表面に導電層を形成する場合、芯材粒子は、その表面が貴金属イオンの捕捉能を有するか、又は貴金属イオンの捕捉能を有するように表面改質されることが好ましい。貴金属イオンは、パラジウムや銀のイオンであることが好ましい。貴金属イオンの捕捉能を有するとは、貴金属イオンをキレート又は塩として捕捉し得ることをいう。例えば芯材粒子の表面に、アミノ基、イミノ基、アミド基、イミド基、シアノ基、水酸基、ニトリル基、カルボキシル基などが存在する場合には、該芯材粒子の表面は貴金属イオンの捕捉能を有する。貴金属イオンの捕捉能を有するように表面改質する場合には、例えば特開昭61-64882号公報記載の方法を用いることができる。 Hereinafter, a method of forming a nickel plating layer as a conductive layer will be described.
When the conductive layer is formed on the surface of the core material particles by the electroless plating method, the core material particles are surface-modified so that the surface has the ability to capture noble metal ions or has the ability to capture noble metal ions. Is preferable. The noble metal ion is preferably a palladium or silver ion. Having the ability to capture noble metal ions means that the noble metal ions can be captured as a chelate or a salt. For example, when an amino group, an imino group, an amide group, an imide group, a cyano group, a hydroxyl group, a nitrile group, a carboxyl group, etc. are present on the surface of the core material particles, the surface of the core material particles has an ability to capture noble metal ions. Have. When the surface is modified so as to have the ability to capture noble metal ions, for example, the method described in JP-A-61-64882 can be used.
このような芯材粒子を用い、その表面に貴金属を担持させる。具体的には、芯材粒子を塩化パラジウムや硝酸銀のような貴金属塩の希薄な酸性水溶液に分散させる。これによって貴金属イオンを粒子の表面に捕捉させる。貴金属塩の濃度は粒子の表面積1m2当たり1×10-7~1×10-2モルの範囲で十分である。貴金属イオンが捕捉された芯材粒子は系から分離され水洗される。引き続き、芯材粒子を水に懸濁させ、これに還元剤を加えて貴金属イオンの還元処理を行う。これによって芯材粒子の表面に貴金属を坦持させる。還元剤は、例えば次亜リン酸ナトリウム、水酸化ホウ素ナトリウム、水素化ホウ素カリウム、ジメチルアミンボラン、ヒドラジン、ホルマリン等が用いられ、これらのうちから、目的とする導電層の構成材料に基づいて選択されることが好ましい。
Such core material particles are used to support a precious metal on the surface thereof. Specifically, the core material particles are dispersed in a dilute acidic aqueous solution of a precious metal salt such as palladium chloride or silver nitrate. This causes the noble metal ions to be captured on the surface of the particles. The concentration of the noble metal salt is sufficient in the range of 1 × 10 -7 to 1 × 10 −2 mol per 1 m 2 of the surface area of the particles. The core material particles in which the noble metal ions are captured are separated from the system and washed with water. Subsequently, the core material particles are suspended in water, and a reducing agent is added thereto to reduce the noble metal ions. As a result, the precious metal is carried on the surface of the core material particles. As the reducing agent, for example, sodium hypophosphite, sodium borohydride, potassium borohydride, dimethylamine borane, hydrazine, formalin and the like are used, and the reducing agent is selected from these based on the constituent material of the target conductive layer. It is preferable to be done.
貴金属イオンを芯材粒子の表面に捕捉させる前に、錫イオンを粒子の表面に吸着させる感受性化処理を施してもよい。錫イオンを粒子の表面に吸着させるには、例えば表面改質処理された芯材粒子を塩化第一錫の水溶液に投入し所定時間攪拌すればよい。
Before capturing the noble metal ions on the surface of the core material particles, a sensitization treatment for adsorbing tin ions on the surface of the particles may be performed. In order to adsorb tin ions on the surface of the particles, for example, the surface-modified core material particles may be put into an aqueous solution of stannous chloride and stirred for a predetermined time.
このようにして前処理が施された芯材粒子について、導電層の形成処理を行う。導電層の形成処理として、突起を有する導電層を形成する処理、及び表面が平滑な導電層を形成する処理の2種類があるが、まず、突起を有する導電層を形成する処理について説明する。
The conductive layer is formed on the core material particles that have been pretreated in this way. There are two types of treatments for forming the conductive layer: a treatment for forming a conductive layer having protrusions and a treatment for forming a conductive layer having a smooth surface. First, a treatment for forming a conductive layer having protrusions will be described.
突起を有する導電層を形成する処理においては、以下の第1工程、及び第2工程を行う。
第1工程は、芯材粒子の水性スラリーと、分散剤、ニッケル塩、還元剤及び錯化剤などを含んだ無電解ニッケルめっき浴とを混合する無電解ニッケルめっき工程である。かかる第1工程では、芯材粒子上への導電層の形成と同時にめっき浴の自己分解が起こる。この自己分解は、芯材粒子の近傍で生じるため、導電層の形成時に自己分解物が芯材粒子表面上に捕捉されることによって、微小突起の核が生成し、それと同時に導電層の形成がなされる。生成した微小突起の核を基点として、突起が成長する。 In the process of forming the conductive layer having protrusions, the following first step and second step are performed.
The first step is an electroless nickel plating step of mixing an aqueous slurry of core material particles with an electroless nickel plating bath containing a dispersant, a nickel salt, a reducing agent, a complexing agent and the like. In the first step, self-decomposition of the plating bath occurs at the same time as the formation of the conductive layer on the core material particles. Since this autolysis occurs in the vicinity of the core material particles, the autolyzed material is trapped on the surface of the core material particles when the conductive layer is formed, so that the nuclei of microprojections are generated, and at the same time, the conductive layer is formed. Will be done. The protrusion grows from the nucleus of the generated microprotrusion as a base point.
第1工程は、芯材粒子の水性スラリーと、分散剤、ニッケル塩、還元剤及び錯化剤などを含んだ無電解ニッケルめっき浴とを混合する無電解ニッケルめっき工程である。かかる第1工程では、芯材粒子上への導電層の形成と同時にめっき浴の自己分解が起こる。この自己分解は、芯材粒子の近傍で生じるため、導電層の形成時に自己分解物が芯材粒子表面上に捕捉されることによって、微小突起の核が生成し、それと同時に導電層の形成がなされる。生成した微小突起の核を基点として、突起が成長する。 In the process of forming the conductive layer having protrusions, the following first step and second step are performed.
The first step is an electroless nickel plating step of mixing an aqueous slurry of core material particles with an electroless nickel plating bath containing a dispersant, a nickel salt, a reducing agent, a complexing agent and the like. In the first step, self-decomposition of the plating bath occurs at the same time as the formation of the conductive layer on the core material particles. Since this autolysis occurs in the vicinity of the core material particles, the autolyzed material is trapped on the surface of the core material particles when the conductive layer is formed, so that the nuclei of microprojections are generated, and at the same time, the conductive layer is formed. Will be done. The protrusion grows from the nucleus of the generated microprotrusion as a base point.
第1工程では、前述した芯材粒子を好ましくは0.1~500g/L、更に好ましくは1~300g/Lの範囲で水に十分に分散させ、水性スラリーを調製する。分散操作は、通常攪拌、高速攪拌又はコロイドミル若しくはホモジナイザーのような剪断分散装置を用いて行うことができる。また、分散操作に超音波を併用してもかまわない。必要に応じ、分散操作においては界面活性剤などの分散剤を添加する場合もある。次いで、ニッケル塩、還元剤、錯化剤及び各種添加剤などを含んだ無電解ニッケルめっき浴に、分散操作を行った芯材粒子の水性スラリーを添加し、無電解めっき第1工程を行う。
In the first step, the above-mentioned core material particles are sufficiently dispersed in water in the range of preferably 0.1 to 500 g / L, more preferably 1 to 300 g / L to prepare an aqueous slurry. The dispersion operation can be carried out by normal stirring, high speed stirring or by using a shear dispersion device such as a colloid mill or a homogenizer. Further, ultrasonic waves may be used in combination with the dispersion operation. If necessary, a dispersant such as a surfactant may be added in the dispersion operation. Next, the aqueous slurry of the core material particles subjected to the dispersion operation is added to the electroless nickel plating bath containing the nickel salt, the reducing agent, the complexing agent, various additives and the like, and the first step of the electroless plating is performed.
前述した分散剤としては、例えば非イオン界面活性剤、両性イオン界面活性剤及び/又は水溶性高分子が挙げられる。非イオン界面活性剤としては、ポリエチレングリコール、ポリオキシエチレンアルキルエーテル、ポリオキシエチレンアルキルフェニルエーテルなどのポリオキシアルキレンエーテル系の界面活性剤を用いることができる。両性イオン界面活性剤としては、アルキルジメチル酢酸ベタイン、アルキルジメチルカルボキシメチル酢酸ベタイン、アルキルジメチルアミノ酢酸ベタインなどのベタイン系の界面活性剤を用いることができる。水溶性高分子としては、ポリビニルアルコール、ポリビニルピロリジノン、ヒドロキシエチルセルロースなどを用いることができる。これらの分散剤は、1種を単独で又は2種以上を組み合わせて用いることができる。分散剤の使用量は、その種類にもよるが、一般に、液体(無電解ニッケルめっき浴)の体積に対して0.5~30g/Lである。特に、分散剤の使用量が液体(無電解ニッケルめっき浴)の体積に対して1~10g/Lの範囲であると、導電層の密着性が一層向上する観点から好ましい。
Examples of the above-mentioned dispersant include nonionic surfactants, zwitterionic surfactants and / or water-soluble polymers. As the nonionic surfactant, a polyoxyalkylene ether-based surfactant such as polyethylene glycol, polyoxyethylene alkyl ether, or polyoxyethylene alkyl phenyl ether can be used. As the amphoteric ion surfactant, a betaine-based surfactant such as alkyldimethylacetate betaine, alkyldimethylcarboxymethyl acetate betaine, and alkyldimethylaminoacetate betaine can be used. As the water-soluble polymer, polyvinyl alcohol, polyvinylpyrrolidinone, hydroxyethyl cellulose and the like can be used. These dispersants can be used alone or in combination of two or more. The amount of the dispersant used depends on the type, but is generally 0.5 to 30 g / L with respect to the volume of the liquid (electroless nickel plating bath). In particular, when the amount of the dispersant used is in the range of 1 to 10 g / L with respect to the volume of the liquid (electroless nickel plating bath), it is preferable from the viewpoint of further improving the adhesion of the conductive layer.
ニッケル塩としては、例えば塩化ニッケル、硫酸ニッケル又は酢酸ニッケルなどが用いられ、その濃度は0.1~50g/Lの範囲とすることが好ましい。還元剤としては、例えば先に述べた貴金属イオンの還元に用いられているものと同様のものを用いることができ、目的とする下地皮膜の構成材料に基づいて選択される。還元剤としてリン化合物、例えば次亜リン酸ナトリウムを用いる場合、その濃度は、0.1~50g/Lの範囲であることが好ましい。また、還元剤としてホウ素化合物、例えばジメチルアミンボランを用いる場合、その濃度は、0.01~100g/Lの範囲であることが好ましい。
As the nickel salt, for example, nickel chloride, nickel sulfate, nickel acetate or the like is used, and the concentration thereof is preferably in the range of 0.1 to 50 g / L. As the reducing agent, for example, the same one as that used for the reduction of the noble metal ion described above can be used, and the reducing agent is selected based on the constituent material of the target base film. When a phosphorus compound such as sodium hypophosphite is used as the reducing agent, the concentration thereof is preferably in the range of 0.1 to 50 g / L. When a boron compound, for example, dimethylamine borane is used as the reducing agent, the concentration thereof is preferably in the range of 0.01 to 100 g / L.
錯化剤としては、例えばクエン酸、ヒドロキシ酢酸、酒石酸、リンゴ酸、乳酸、グルコン酸若しくはそのアルカリ金属塩やアンモニウム塩などのカルボン酸(塩)、グリシンなどのアミノ酸、エチレンジアミン、アルキルアミンなどのアミン酸、その他のアンモニウム、EDTA又はピロリン酸(塩)など、ニッケルイオンに対し錯化作用のある化合物が使用される。これらは1種を単独で又は2種以上を組み合わせて用いることができる。その濃度は好ましくは1~100g/L、更に好ましくは5~50g/Lの範囲である。この段階での好ましい無電解ニッケルめっき浴のpHは、3~14の範囲である。無電解ニッケルめっき反応は、芯材粒子の水性スラリーを添加すると速やかに始まり、水素ガスの発生を伴う。第1工程は、その水素ガスの発生が完全に認められなくなった時点をもって終了とする。
Examples of the complexing agent include citric acid, hydroxyacetic acid, tartaric acid, malic acid, lactic acid, gluconic acid or carboxylic acids (salts) such as alkali metal salts and ammonium salts thereof, amino acids such as glycine, and amines such as ethylenediamine and alkylamine. Acids and other compounds that have a complexing effect on nickel ions, such as ammonium, EDTA or pyrophosphate (salt), are used. These can be used alone or in combination of two or more. The concentration is preferably in the range of 1 to 100 g / L, more preferably 5 to 50 g / L. The pH of the preferred electroless nickel plating bath at this stage is in the range of 3-14. The electroless nickel plating reaction starts promptly when an aqueous slurry of core particles is added, and is accompanied by the generation of hydrogen gas. The first step is terminated when the generation of hydrogen gas is completely no longer recognized.
次いで第2工程においては、前記の第1工程に続けて、(i)ニッケル塩、還元剤及びアルカリのうちの1種を含む第1の水溶液と、残りの2種を含む第2の水溶液を用いるか、又は(ii)ニッケル塩を含む第1の水溶液と、還元剤を含む第2の水溶液と、アルカリを含む第3の水溶液とを用い、これらの水溶液をそれぞれ同時にかつ経時的に、第1工程の液に添加して無電解ニッケルめっきを行う。これらの液を添加すると再びめっき反応が始まるが、その添加量を調整することによって、形成される導電層を所望の膜厚に制御することができる。無電解ニッケルめっき液の添加終了後、水素ガスの発生が完全に認められなくなってから暫く液温を保持しながら攪拌を継続して反応を完結させる。
Next, in the second step, following the first step, (i) a first aqueous solution containing one of a nickel salt, a reducing agent and an alkali, and a second aqueous solution containing the remaining two are added. Either used, or (ii) a first aqueous solution containing a nickel salt, a second aqueous solution containing a reducing agent, and a third aqueous solution containing an alkali are used, and these aqueous solutions are used simultaneously and over time, respectively. Electroless nickel plating is performed by adding to the liquid of one step. When these liquids are added, the plating reaction starts again, and the conductive layer formed can be controlled to a desired film thickness by adjusting the addition amount. After the addition of the electroless nickel plating solution is completed, after the generation of hydrogen gas is completely no longer observed, stirring is continued while maintaining the liquid temperature for a while to complete the reaction.
前記の(i)の場合には、ニッケル塩を含む第1の水溶液と、還元剤及びアルカリを含む第2の水溶液とを用いることが好ましいが、この組合せに限られない。この場合には、第1の水溶液には還元剤及びアルカリは含まれず、第2の水溶液にはニッケル塩は含まれない。ニッケル塩及び還元剤としては、先に述べたものを用いることができる。アルカリとしては、例えば水酸化ナトリウムや水酸化カリウム等のアルカリ金属の水酸化物を用いることができる。前記の(ii)の場合についても同様である。
In the case of (i) above, it is preferable to use a first aqueous solution containing a nickel salt and a second aqueous solution containing a reducing agent and an alkali, but the combination is not limited to this. In this case, the first aqueous solution does not contain the reducing agent and the alkali, and the second aqueous solution does not contain the nickel salt. As the nickel salt and the reducing agent, those described above can be used. As the alkali, for example, a hydroxide of an alkali metal such as sodium hydroxide or potassium hydroxide can be used. The same applies to the case of (ii) above.
前記の(ii)の場合には、第1~第3の水溶液にニッケル塩、還元剤及びアルカリがそれぞれ含まれ、かつ各水溶液には当該成分以外の他の2成分は含まれない。
In the case of (ii) above, the first to third aqueous solutions contain nickel salts, reducing agents and alkalis, respectively, and each aqueous solution does not contain any other two components other than the components.
(i)及び(ii)の場合のいずれであっても、水溶液中のニッケル塩の濃度は10~1,000g/L、特に50~500g/Lであることが好ましい。還元剤の濃度は、還元剤としてリン化合物を用いる場合、100~1,000g/L、特に100~800g/Lであることが好ましい。還元剤としてホウ素化合物を用いる場合、5~200g/L、特に10~100g/Lであることが好ましい。還元剤としてヒドラジン又はその誘導体を用いる場合、5~200g/L、特に10~100g/Lであることが好ましい。アルカリの濃度は5~500g/L、特に10~200g/Lであることが好ましい。
In any of the cases (i) and (ii), the concentration of the nickel salt in the aqueous solution is preferably 10 to 1,000 g / L, particularly preferably 50 to 500 g / L. When a phosphorus compound is used as the reducing agent, the concentration of the reducing agent is preferably 100 to 1,000 g / L, particularly preferably 100 to 800 g / L. When a boron compound is used as the reducing agent, it is preferably 5 to 200 g / L, particularly preferably 10 to 100 g / L. When hydrazine or a derivative thereof is used as the reducing agent, it is preferably 5 to 200 g / L, particularly preferably 10 to 100 g / L. The alkali concentration is preferably 5 to 500 g / L, particularly preferably 10 to 200 g / L.
第2工程は、第1工程の終了後に連続して行うが、これに代えて、第1工程と第2工程とを断続して行ってもよい。この場合には、第1工程の終了後、濾過などの方法によって芯材粒子とめっき液とを分別し、新たに芯材粒子を水に分散させて水性スラリーを調製し、そこに錯化剤を好ましくは1~100g/L、更に好ましくは5~50g/Lの濃度範囲で溶解した水溶液を添加し、分散剤を好ましくは0.5~30g/L、更に好ましくは1~10g/Lの範囲で溶解し水性スラリーを調製して、該水性スラリーに前記の各水溶液を添加する第2工程を行う方法でもよい。このようにして、突起を有する導電層が形成できる。
The second step is continuously performed after the completion of the first step, but instead of this, the first step and the second step may be performed intermittently. In this case, after the completion of the first step, the core material particles and the plating solution are separated by a method such as filtration, and the core material particles are newly dispersed in water to prepare an aqueous slurry, and a complexing agent is prepared therein. Is preferably added in a concentration range of 1 to 100 g / L, more preferably 5 to 50 g / L, and the dispersant is preferably 0.5 to 30 g / L, more preferably 1 to 10 g / L. It is also possible to carry out the second step of dissolving in a range to prepare an aqueous slurry and adding each of the above aqueous solutions to the aqueous slurry. In this way, the conductive layer having protrusions can be formed.
続いて、以下では表面が平滑な導電層を形成する処理について説明する。
表面が平滑な導電層の形成は、上記突起を有する導電層を形成する処理の第1工程における無電解ニッケルめっき浴中のニッケル塩の濃度を薄くすることで行うことができる。すなわち、ニッケル塩としては、例えば塩化ニッケル、硫酸ニッケル又は酢酸ニッケルなどが用いられ、その濃度を好ましくは0.01~0.5g/Lの範囲とする。無電解ニッケルめっき浴中のニッケル塩の濃度を薄くすること以外の上記第1工程、及び第2工程を行う方法により、表面が平滑な導電層を形成できる。 Subsequently, the process of forming a conductive layer having a smooth surface will be described below.
The formation of the conductive layer having a smooth surface can be performed by reducing the concentration of the nickel salt in the electroless nickel plating bath in the first step of the treatment for forming the conductive layer having the protrusions. That is, as the nickel salt, for example, nickel chloride, nickel sulfate, nickel acetate or the like is used, and the concentration thereof is preferably in the range of 0.01 to 0.5 g / L. A conductive layer having a smooth surface can be formed by the method of performing the first step and the second step other than reducing the concentration of the nickel salt in the electroless nickel plating bath.
表面が平滑な導電層の形成は、上記突起を有する導電層を形成する処理の第1工程における無電解ニッケルめっき浴中のニッケル塩の濃度を薄くすることで行うことができる。すなわち、ニッケル塩としては、例えば塩化ニッケル、硫酸ニッケル又は酢酸ニッケルなどが用いられ、その濃度を好ましくは0.01~0.5g/Lの範囲とする。無電解ニッケルめっき浴中のニッケル塩の濃度を薄くすること以外の上記第1工程、及び第2工程を行う方法により、表面が平滑な導電層を形成できる。 Subsequently, the process of forming a conductive layer having a smooth surface will be described below.
The formation of the conductive layer having a smooth surface can be performed by reducing the concentration of the nickel salt in the electroless nickel plating bath in the first step of the treatment for forming the conductive layer having the protrusions. That is, as the nickel salt, for example, nickel chloride, nickel sulfate, nickel acetate or the like is used, and the concentration thereof is preferably in the range of 0.01 to 0.5 g / L. A conductive layer having a smooth surface can be formed by the method of performing the first step and the second step other than reducing the concentration of the nickel salt in the electroless nickel plating bath.
本発明の導電性粒子は、上述した方法により得られた導電性粒子を、1,000Pa以下、好ましくは0.01~900Pa、特に好ましくは0.01~500Paの真空下、200~600℃、好ましくは250~500℃、特に好ましくは300~450℃の温度で加熱処理することにより得られる。このような真空状態を保ちつつ導電性粒子を加熱することで、導電層の表面に存在する炭素及び酸素の割合を低下させることができ、炭素、酸素及びニッケルに対するリンのモル比が適切なものとなる。なお、本発明における真空度は絶対圧、すなわち絶対真空を0としたときの値である。
The conductive particles of the present invention are obtained by using the conductive particles obtained by the above method at 200 to 600 ° C. under a vacuum of 1,000 Pa or less, preferably 0.01 to 900 Pa, particularly preferably 0.01 to 500 Pa. It is preferably obtained by heat treatment at a temperature of 250 to 500 ° C, particularly preferably 300 to 450 ° C. By heating the conductive particles while maintaining such a vacuum state, the ratio of carbon and oxygen present on the surface of the conductive layer can be reduced, and the molar ratio of phosphorus to carbon, oxygen and nickel is appropriate. It becomes. The degree of vacuum in the present invention is an absolute pressure, that is, a value when the absolute vacuum is 0.
加熱処理時間は0.1~10時間であることが好ましく、0.5~5時間であることが更に好ましい。この処理時間を採用することで、製造コストの増大を抑制することができ、また熱履歴による芯材粒子や導電層の変性が抑制され、品質に及ぼす影響を小さくできる。この加熱処理時間は、目的とする処理温度に達してから加熱処理が終了するまでの時間である。
The heat treatment time is preferably 0.1 to 10 hours, more preferably 0.5 to 5 hours. By adopting this processing time, it is possible to suppress an increase in manufacturing cost, and it is possible to suppress denaturation of core material particles and conductive layer due to thermal history, and to reduce the influence on quality. This heat treatment time is the time from reaching the target treatment temperature to the end of the heat treatment.
加熱処理は、導電性粒子を静置させた状態で行ってもよく、撹拌しながら行ってもよい。導電性粒子を静置させた状態で加熱処理を行う場合、0.1mm~100mmの厚さで静置させておくことが好ましい。この厚さで静置させておくことで、導電層への加熱処理が首尾よく行われ、製造コストを抑制することができる。
The heat treatment may be performed in a state where the conductive particles are allowed to stand still, or may be performed while stirring. When the heat treatment is performed in a state where the conductive particles are allowed to stand still, it is preferable to allow the conductive particles to stand still to a thickness of 0.1 mm to 100 mm. By allowing the conductive layer to stand still at this thickness, the conductive layer can be successfully heat-treated and the manufacturing cost can be suppressed.
加熱処理は、導電性粒子を入れた容器を真空引きした後、静置した状態で又は撹拌しながら行う。この際、導電性粒子を入れた容器の気相部を窒素等の不活性ガスで置換してから真空引きしてもよいし、そのまま真空引きしてもよい。また加熱処理は、必要により複数回行ってもよい。
このようにして、本発明の導電性粒子が得られる。 The heat treatment is performed by vacuuming the container containing the conductive particles and then allowing the container to stand still or stirring. At this time, the gas phase portion of the container containing the conductive particles may be replaced with an inert gas such as nitrogen and then evacuated, or may be evacuated as it is. Further, the heat treatment may be performed a plurality of times if necessary.
In this way, the conductive particles of the present invention can be obtained.
このようにして、本発明の導電性粒子が得られる。 The heat treatment is performed by vacuuming the container containing the conductive particles and then allowing the container to stand still or stirring. At this time, the gas phase portion of the container containing the conductive particles may be replaced with an inert gas such as nitrogen and then evacuated, or may be evacuated as it is. Further, the heat treatment may be performed a plurality of times if necessary.
In this way, the conductive particles of the present invention can be obtained.
本発明の導電性粒子は、後述するように導電性接着剤の導電性フィラーとして用いる場合に、導電性粒子間のショートの発生を防止するため、その表面を更に絶縁樹脂で被覆することができる。絶縁樹脂の被覆は、圧力等を加えない状態では導電性粒子の表面が極力露出しないように、かつ導電性接着剤を用いて2枚の電極を接着する際に加えられる熱及び圧力によって破壊され、導電性粒子の表面のうち少なくとも突起が露出するように形成される。絶縁樹脂の厚さは0.1~0.5μm程度とすることができる。絶縁樹脂は導電性粒子の表面全体を覆っていてもよいし、導電性粒子の表面の一部を覆っているだけでもよい。
When the conductive particles of the present invention are used as a conductive filler of a conductive adhesive as described later, the surface thereof can be further coated with an insulating resin in order to prevent the occurrence of short circuits between the conductive particles. .. The coating of the insulating resin is destroyed by the heat and pressure applied when the two electrodes are bonded together with a conductive adhesive so that the surface of the conductive particles is not exposed as much as possible when no pressure is applied. , At least the protrusions on the surface of the conductive particles are exposed. The thickness of the insulating resin can be about 0.1 to 0.5 μm. The insulating resin may cover the entire surface of the conductive particles, or may cover only a part of the surface of the conductive particles.
絶縁樹脂としては、当該技術分野で公知のものを広く用いることができる。その一例を示せば、フェノール樹脂、ユリア樹脂、メラミン樹脂、アリル樹脂、フラン樹脂、ポリエステル樹脂、エポキシ樹脂、シリコーン樹脂、ポリアミド-イミド樹脂、ポリイミド樹脂、ポリウレタン樹脂、フッ素樹脂、ポリオレフィン樹脂(例:ポリエチレン、ポリプロピレン、ポリブチレン)、ポリアルキル(メタ)アクリレート樹脂、ポリ(メタ)アクリル酸樹脂、ポリスチレン樹脂、アクリロニトリル-スチレン-ブタジエン樹脂、ビニル樹脂、ポリアミド樹脂、ポリカーボネート樹脂、ポリアセタール樹脂、アイオノマー樹脂、ポリエーテルスルホン樹脂、ポリフェニルオキシド樹脂、ポリスルホン樹脂、ポリフッ化ビニリデン樹脂、エチルセルロース樹脂及び酢酸セルロース樹脂等の有機ポリマーからなる樹脂を挙げることができる。
As the insulating resin, those known in the technical field can be widely used. To give an example, phenol resin, urea resin, melamine resin, allyl resin, furan resin, polyester resin, epoxy resin, silicone resin, polyamide-imide resin, polyimide resin, polyurethane resin, fluororesin, polyolefin resin (eg polyethylene). , Polypropylene, Polybutylene), Polyalkyl (meth) acrylate resin, Poly (meth) acrylic acid resin, Polystyrene resin, Acrylonitrile-styrene-butadiene resin, Vinyl resin, Polyamide resin, Polycarbonate resin, Polyacetal resin, Ionomer resin, Polyether sulfone Examples thereof include resins made of organic polymers such as resins, polyphenyl oxide resins, polysulfone resins, polyvinylidene fluoride resins, ethyl cellulose resins and cellulose acetate resins.
導電性粒子の表面に絶縁被覆層を形成する方法としては、コアセルベーション法、界面重合法、in situ重合法及び液中硬化被覆法等の化学的方法、スプレードライング法、気中懸濁被覆法、真空蒸着被覆法、ドライブレンド法、ハイブリダイゼーション法、静電的合体法、融解分散冷却法及び無機質カプセル化法等の物理機械的方法、界面沈澱法等の物理化学的方法が挙げられる。
As a method for forming an insulating coating layer on the surface of conductive particles, a chemical method such as a core selvation method, an interfacial polymerization method, an insitu polymerization method and a liquid curing coating method, a spray drying method, and an aerial suspension coating method are used. Examples thereof include a physico-mechanical method such as a vacuum vapor deposition coating method, a dry blend method, a hybridization method, an electrostatic coalescence method, a melting dispersion cooling method and an inorganic encapsulation method, and a physicochemical method such as an interfacial precipitation method.
前記絶縁樹脂を構成する有機ポリマーは、非導電性であることを条件として、ポリマーの構造中にイオン性基を含む化合物をモノマー成分として含んでいてもよい。イオン性基を含む化合物は、架橋性モノマーであってもよく、非架橋性モノマーであってもよい。つまり、架橋性モノマー及び非架橋性モノマーの少なくとも1種がイオン性基を有する化合物を用いて、有機ポリマーが形成されていることが好ましい。「モノマー成分」とは、有機ポリマー中のモノマーに由来する構造を指し、モノマーから誘導される成分である。モノマーを重合に供することによって、該モノマー成分を構成単位として含む有機ポリマーが形成される。
The organic polymer constituting the insulating resin may contain a compound containing an ionic group as a monomer component in the structure of the polymer, provided that it is non-conductive. The compound containing an ionic group may be a crosslinkable monomer or a non-crosslinkable monomer. That is, it is preferable that the organic polymer is formed by using a compound in which at least one of the crosslinkable monomer and the non-crosslinkable monomer has an ionic group. The "monomer component" refers to a structure derived from a monomer in an organic polymer, and is a component derived from the monomer. By subjecting the monomer to polymerization, an organic polymer containing the monomer component as a constituent unit is formed.
イオン性基は、絶縁樹脂を構成する有機ポリマーの界面に存在することが好ましい。また、イオン性基は、有機ポリマーを構成するモノマー成分に化学結合していることが好ましい。イオン性基が有機ポリマーの界面に存在するか否かは、イオン性基を有する有機ポリマーを含む絶縁樹脂を導電性粒子の表面に形成したときに、走査型電子顕微鏡観察によって絶縁樹脂が導電性粒子の表面に付着しているか否かによって判断することができる。
The ionic group is preferably present at the interface of the organic polymer constituting the insulating resin. Further, it is preferable that the ionic group is chemically bonded to the monomer component constituting the organic polymer. Whether or not the ionic group is present at the interface of the organic polymer is determined by the scanning electron microscope observation when the insulating resin containing the organic polymer having the ionic group is formed on the surface of the conductive particles. It can be determined by whether or not it adheres to the surface of the particles.
イオン性基としては、例えば、ホスホニウム基、アンモニウム基、スルホニウム基等のオニウム系官能基が挙げられる。これらのうち、導電性粒子及び絶縁樹脂の密着性を高めて、絶縁性と導通信頼性とを高いレベルで兼ね備えた導電性粒子を形成する観点から、アンモニウム基又はホスホニウム基であることが好ましく、ホスホニウム基であることが更に好ましい。
Examples of the ionic group include onium-based functional groups such as a phosphonium group, an ammonium group and a sulfonium group. Of these, ammonium groups or phosphonium groups are preferable from the viewpoint of enhancing the adhesiveness of the conductive particles and the insulating resin to form conductive particles having both insulating properties and conduction reliability at a high level. It is more preferably a phosphonium group.
オニウム系官能基は、下記一般式(1)で表されるものが好ましく挙げられる。
As the onium-based functional group, those represented by the following general formula (1) are preferably mentioned.
(式中、Xはリン原子、窒素原子、又は硫黄原子であり、Rは同じであっても異なっていてもよく、水素原子、直鎖状、分岐鎖状若しくは環状のアルキル基、又はアリール基である。nは、Xが窒素原子、リン原子の場合は1であり、Xが硫黄原子の場合は0である。*は結合手である。)
(In the formula, X is a phosphorus atom, a nitrogen atom, or a sulfur atom, and R may be the same or different, and is a hydrogen atom, a linear, branched or cyclic alkyl group, or an aryl group. N is 1 when X is a nitrogen atom and a phosphorus atom, and 0 when X is a sulfur atom. * Is a bond.)
イオン性基に対する対イオンとしては、例えばハロゲン化物イオンが挙げられる。ハロゲン化物イオンの例としては、Cl-、F-、Br-、I-が挙げられる。
Examples of the counterion for the ionic group include halide ions. Examples of halide ions include Cl − , F − , Br − , and I − .
式(1)中、Rで表される直鎖状のアルキル基としては、例えば炭素数1以上20以下の直鎖状アルキル基が挙げられ、具体的には、メチル基、エチル基、n-プロピル基、n-ブチル基、n-ペンチル基、n-ヘキシル基、n-ヘプチル基、n-オクチル基、n-ノニル基、n-デシル基、n-ウンデシル基、n-ドデシル基、n-トリデシル基、n-テトラデシル基、n-ペンタデシル基、n-ヘキサデシル基、n-ヘプタデシル基、n-オクタデシル基、n-ノナデシル基、n-イコシル基等が挙げられる。
In the formula (1), examples of the linear alkyl group represented by R include a linear alkyl group having 1 or more and 20 or less carbon atoms, and specifically, a methyl group, an ethyl group, or n−. Propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, n-dodecyl group, n- Examples thereof include a tridecyl group, an n-tetradecyl group, an n-pentadecyl group, an n-hexadecyl group, an n-heptadecyl group, an n-octadecyl group, an n-nonadecyl group and an n-icosyl group.
式(1)中、Rで表される分岐鎖状のアルキル基としては、例えば炭素数3以上8以下の分岐鎖状アルキル基が挙げられ、具体的には、イソプロピル基、イソブチル基、s-ブチル基、t-ブチル基、イソペンチル基、s-ペンチル基、t-ペンチル基、イソヘキシル基、s-ヘキシル基、t-ヘキシル基、エチルヘキシル基等が挙げられる。
In the formula (1), examples of the branched alkyl group represented by R include a branched alkyl group having 3 or more carbon atoms and 8 or less carbon atoms, and specifically, an isopropyl group, an isobutyl group, or s-. Examples thereof include a butyl group, a t-butyl group, an isopentyl group, an s-pentyl group, a t-pentyl group, an isohexyl group, an s-hexyl group, a t-hexyl group and an ethylhexyl group.
式(1)中、Rで表される環状のアルキル基としては、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基、シクロオクチル基、シクロオクタデシル基といったシクロアルキル基等が挙げられる。
In the formula (1), examples of the cyclic alkyl group represented by R include cycloalkyl groups such as cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group and cyclooctadecyl group. ..
式(1)中、Rで表されるアリール基としては、フェニル基、ベンジル基、トリル基、o-キシリル基等が挙げられる。
In the formula (1), examples of the aryl group represented by R include a phenyl group, a benzyl group, a tolyl group, an o-kisilyl group and the like.
一般式(1)中、Rは、炭素数1以上12以下のアルキル基であることが好ましく、炭素数1以上10以下のアルキル基であることがより好ましく、炭素数1以上8以下のアルキル基であることが更に好ましい。また、一般式(1)中、Rが直鎖状アルキル基であることも更に好ましい。オニウム系官能基がこのような構成となっていることによって、絶縁樹脂と導電性粒子との密着性を高めて絶縁性を確保するとともに、熱圧着時における導通信頼性を一層高めることができる。
In the general formula (1), R is preferably an alkyl group having 1 or more and 12 or less carbon atoms, more preferably an alkyl group having 1 or more and 10 or less carbon atoms, and an alkyl group having 1 or more and 8 or less carbon atoms. Is more preferable. Further, in the general formula (1), it is further preferable that R is a linear alkyl group. By having such a structure of the onium-based functional group, it is possible to enhance the adhesion between the insulating resin and the conductive particles to secure the insulating property, and to further enhance the conduction reliability at the time of thermocompression bonding.
モノマーの入手及びポリマーの合成を容易にするとともに、絶縁樹脂の製造効率を高める観点から、絶縁樹脂を構成するイオン性基を有する有機ポリマーは、下記一般式(2)又は一般式(3)で表される構成単位を有することが好ましい。
From the viewpoint of facilitating the acquisition of the monomer and the synthesis of the polymer and increasing the production efficiency of the insulating resin, the organic polymer having an ionic group constituting the insulating resin is represented by the following general formula (2) or general formula (3). It is preferable to have a structural unit represented.
(式中、X、R及びnは前記一般式(1)と同義である。mは0以上5以下の整数である。An-は一価のアニオンを示す。)
(In the formula, X, R and n are synonymous with the general formula (1). M is an integer of 0 or more and 5 or less . An − indicates a monovalent anion.)
(式中、X、R及びnは前記一般式(1)と同義である。An-は一価のアニオンを示す。m1は1以上5以下の整数である。R5は、水素原子又はメチル基である。)
(In the formula, X, R and n are synonymous with the general formula (1). An − represents a monovalent anion. M 1 is an integer of 1 or more and 5 or less. R 5 is a hydrogen atom or It is a methyl group.)
式(2)及び式(3)中のRの例としては、上述した一般式(1)中のRの官能基の説明が適宜適用される。イオン性基は、式(2)のベンゼン環のCH基に対しパラ位、オルト位、メタ位の何れに結合していてもよく、パラ位に結合することが好ましい。式(2)及び式(3)中、一価のAn-としてはハロゲン化物イオンが好適に挙げられる。ハロゲン化物イオンの例としては、Cl-、F-、Br-、I-が挙げられる。
As an example of R in the formula (2) and the formula (3), the description of the functional group of R in the general formula (1) described above is appropriately applied. The ionic group may be bonded to any of the para-position, the ortho-position, and the meta-position with respect to the CH group of the benzene ring of the formula (2), and is preferably bonded to the para-position. In the formula (2) and the formula (3), a halide ion is preferably mentioned as the monovalent An −. Examples of halide ions include Cl − , F − , Br − , and I − .
また、一般式(2)において、mは0以上2以下の整数が好ましく、0又は1がより好ましく、1が特に好ましい。一般式(3)においてm1は1以上3以下が好ましく、1又は2がより好ましく、2が最も好ましい。
Further, in the general formula (2), m is preferably an integer of 0 or more and 2 or less, more preferably 0 or 1, and particularly preferably 1. In the general formula (3), m 1 is preferably 1 or more and 3 or less, more preferably 1 or 2, and most preferably 2.
イオン性基を有する有機ポリマーは、例えばオニウム系の官能基を有し且つエチレン性不飽和結合を有するモノマー成分を含んで構成されることが好ましい。モノマーの入手及びポリマーの合成を容易にし、絶縁樹脂の製造効率を高める観点から、イオン性基を有する有機ポリマーは、非架橋性モノマー成分を含むことも好ましい。
The organic polymer having an ionic group is preferably composed, for example, containing a monomer component having an onium-based functional group and an ethylenically unsaturated bond. From the viewpoint of facilitating the acquisition of the monomer and the synthesis of the polymer and increasing the production efficiency of the insulating resin, the organic polymer having an ionic group preferably contains a non-crosslinkable monomer component.
オニウム系の官能基を有し且つエチレン性不飽和結合を有する非架橋性モノマーとしては、例えば、N,N-ジメチルアミノエチルメタクリレート、N,N-ジメチルアミノプロピルアクリルアミド、N,N,N-トリメチル-N-2-メタクリロイルオキシエチルアンモニウムクロライド等のアンモニウム基含有モノマー;メタクリル酸フェニルジメチルスルホニウムメチル硫酸塩等のスルホニウム基を有するモノマー;4-(ビニルベンジル)トリエチルホスホニウムクロライド、4-(ビニルベンジル)トリメチルホスホニウムクロライド、4-(ビニルベンジル)トリブチルホスホニウムクロライド、4-(ビニルベンジル)トリオクチルホスホニウムクロライド、4-(ビニルベンジル)トリフェニルホスホニウムクロライド、2-(メタクロイルオキシエチル)トリメチルホスホニウムクロライド、2-(メタクロイルオキシエチル)トリエチルホスホニウムクロライド、2-(メタクロイルオキシエチル)トリブチルホスホニウムクロライド、2-(メタクロイルオキシエチル)トリオクチルホスホニウムクロライド、2-(メタクロイルオキシエチル)トリフェニルホスホニウムクロライド等のホスホニウム基を有するモノマーなどが挙げられる。イオン性基を有する有機ポリマーには、2種以上の非架橋性モノマー成分が含まれていてもよい。
Examples of the non-crosslinkable monomer having an onium-based functional group and an ethylenically unsaturated bond include N, N-dimethylaminoethyl methacrylate, N, N-dimethylaminopropylacrylamide, N, N, N-trimethyl. -N-2-Armium group-containing monomer such as methacryloyloxyethylammonium chloride; Monomer having a sulfonium group such as phenyldimethylsulfonate sulfonatemethylsulfate; 4- (vinylbenzyl) triethylphosphonium chloride, 4- (vinylbenzyl) trimethyl Phosphonium chloride, 4- (vinylbenzyl) tributylphosphonium chloride, 4- (vinylbenzyl) trioctylphosphonium chloride, 4- (vinylbenzyl) triphenylphosphonium chloride, 2- (methacloyloxyethyl) trimethylphosphonium chloride, 2-( Phosphonium groups such as metachlorooxyethyl) triethylphosphonium chloride, 2- (methacloyloxyethyl) tributylphosphonium chloride, 2- (methacloyloxyethyl) trioctylphosphonium chloride, 2- (methacloyloxyethyl) triphenylphosphonium chloride. Examples thereof include monomers having the above. The organic polymer having an ionic group may contain two or more kinds of non-crosslinkable monomer components.
絶縁樹脂を構成する有機ポリマーにおいては、モノマー成分の全てにイオン性基が結合したものであってもよく、あるいは、有機ポリマーの全構成単位中の一部にイオン性基が結合していてもよい。有機ポリマーの全構成単位中の一部にイオン性基が結合している場合、イオン性基が結合したモノマー成分の割合は、0.01モル%以上99モル%以下であることが好ましく、0.02モル%以上95モル%以下であることがより好ましい。ここで、有機ポリマー中のモノマー成分の数は、一つのエチレン性不飽和結合に由来する構造を一つのモノマーの構成単位としてカウントする。イオン性基が架橋性モノマー及び非架橋性モノマーの双方に含まれる場合、モノマー成分の割合はその総量とする。
In the organic polymer constituting the insulating resin, an ionic group may be bonded to all of the monomer components, or an ionic group may be bonded to a part of all the constituent units of the organic polymer. good. When an ionic group is bonded to a part of all the constituent units of the organic polymer, the ratio of the monomer component to which the ionic group is bonded is preferably 0.01 mol% or more and 99 mol% or less, and is 0. More preferably, it is 0.02 mol% or more and 95 mol% or less. Here, the number of monomer components in the organic polymer counts the structure derived from one ethylenically unsaturated bond as a constituent unit of one monomer. When the ionic group is contained in both the crosslinkable monomer and the non-crosslinkable monomer, the ratio of the monomer components is the total amount.
絶縁樹脂による被覆の形態としては、複数の絶縁性微粒子が層状に配置された形態、或いは、絶縁性の連続皮膜が挙げられる。
Examples of the form of coating with the insulating resin include a form in which a plurality of insulating fine particles are arranged in a layer, or an insulating continuous film.
前記絶縁樹脂が絶縁性微粒子からなる場合、絶縁性微粒子で被覆された導電性粒子を電極間で熱圧着することで絶縁性微粒子が溶融、変形、剥離又は導電性粒子表面を移動することにより熱圧着された部分における導電性粒子の金属表面が露出し、これにより電極間での導通を可能として接続性が得られる。一方、該導電性粒子における熱圧着方向以外の方向を向く表面部分は、絶縁性微粒子による導電性粒子表面の被覆状態が概ね維持されているため、熱圧着方向以外の方向における導通が防止される。
When the insulating resin is made of insulating fine particles, the insulating fine particles are melted, deformed, peeled off, or moved on the surface of the conductive particles by heat-bonding the conductive particles coated with the insulating fine particles between the electrodes to generate heat. The metal surface of the conductive particles in the crimped portion is exposed, which enables conduction between the electrodes and provides connectivity. On the other hand, since the surface portion of the conductive particles facing a direction other than the thermocompression bonding direction is generally maintained in a state of being covered with the insulating fine particles on the surface of the conductive particles, conduction in a direction other than the thermocompression bonding direction is prevented. ..
絶縁性微粒子は、その表面に前記イオン性基を含むことにより、導電性粒子に密着しやすく、これによって導電性粒子表面における絶縁性微粒子に被覆される割合を十分なものにできるとともに、導電性粒子からの絶縁性微粒子の剥離などが効果的に防止される。このため、絶縁性微粒子による対向電極間と異なる方向における短絡防止効果が発揮されやすく、当該方向での絶縁性の向上が期待できる。
By including the ionic group on the surface of the insulating fine particles, the insulating fine particles can easily adhere to the conductive particles, whereby the ratio of the insulating fine particles covered with the insulating fine particles on the surface of the conductive particles can be made sufficient, and the insulating fine particles are conductive. The peeling of insulating fine particles from the particles is effectively prevented. Therefore, the effect of preventing a short circuit in a direction different from that between the counter electrodes by the insulating fine particles is likely to be exhibited, and improvement in the insulating property in that direction can be expected.
絶縁性微粒子の形状は、特に制限はなく、球状であってもよく、或いは球状以外の形状であってもよい。球状以外の形状としては例えば、繊維状、中空状、板状又は針状が挙げられる。また絶縁性微粒子はその表面に多数の突起を有するもの又は不定形のものであってもよい。導電性粒子への付着性の点や合成の容易性の点で球状の絶縁性微粒子が好ましい。
The shape of the insulating fine particles is not particularly limited and may be spherical or may be a shape other than spherical. Examples of the shape other than the spherical shape include a fibrous shape, a hollow shape, a plate shape, and a needle shape. Further, the insulating fine particles may have a large number of protrusions on the surface thereof or may have an amorphous shape. Spherical insulating fine particles are preferable in terms of adhesion to conductive particles and ease of synthesis.
絶縁性微粒子の平均粒子径(D)は、好ましくは10nm以上3,000nm以下、より好ましくは15nm以上2,000nm以下である。絶縁性微粒子の平均粒子径が上記範囲内であることで、得られる被覆粒子が対向電極間とは異なる方向での短絡を発生させることなく、対向電極間での導通を確保しやすい。なお、本発明において、絶縁性微粒子の平均粒子径は、走査型電子顕微鏡を用いた観察において測定した値であり、具体的には後述する実施例に記載の方法にて測定される。
The average particle size (D) of the insulating fine particles is preferably 10 nm or more and 3,000 nm or less, and more preferably 15 nm or more and 2,000 nm or less. When the average particle size of the insulating fine particles is within the above range, it is easy to secure conduction between the counter electrodes without causing a short circuit in the obtained coated particles in a direction different from that between the counter electrodes. In the present invention, the average particle size of the insulating fine particles is a value measured by observation using a scanning electron microscope, and specifically, it is measured by the method described in Examples described later.
前述の方法によって測定された絶縁性微粒子の粒度分布には幅がある。一般に、粉体の粒度分布の幅は、下記計算式(1)で示される変動係数(Coefficient of Variation、以下「C.V.」とも記載する)により表される。
C.V.(%)=(標準偏差/平均粒子径)×100・・・(1)
このC.V.が大きいということは粒度分布の幅が広いことを示し、一方、C.V.が小さいということは粒度分布がシャープであることを示す。本実施形態の被覆粒子は、C.V.が好ましくは0.1%以上20%以下、より好ましくは0.5%以上15%以下、最も好ましくは1%以上10%以下の絶縁性微粒子を用いることが望ましい。C.V.がこの範囲であることにより、絶縁性微粒子による被覆層の厚みを均一にできる利点がある。 The particle size distribution of the insulating fine particles measured by the above method varies. Generally, the width of the particle size distribution of the powder is represented by the coefficient of variation (hereinafter also referred to as “CV”) represented by the following formula (1).
C. V. (%) = (Standard deviation / average particle size) x 100 ... (1)
This C.I. V. Larger indicates that the particle size distribution is wider, while C.I. V. A small value indicates that the particle size distribution is sharp. The coated particles of this embodiment are C.I. V. It is preferable to use insulating fine particles of 0.1% or more and 20% or less, more preferably 0.5% or more and 15% or less, and most preferably 1% or more and 10% or less. C. V. However, there is an advantage that the thickness of the coating layer made of the insulating fine particles can be made uniform.
C.V.(%)=(標準偏差/平均粒子径)×100・・・(1)
このC.V.が大きいということは粒度分布の幅が広いことを示し、一方、C.V.が小さいということは粒度分布がシャープであることを示す。本実施形態の被覆粒子は、C.V.が好ましくは0.1%以上20%以下、より好ましくは0.5%以上15%以下、最も好ましくは1%以上10%以下の絶縁性微粒子を用いることが望ましい。C.V.がこの範囲であることにより、絶縁性微粒子による被覆層の厚みを均一にできる利点がある。 The particle size distribution of the insulating fine particles measured by the above method varies. Generally, the width of the particle size distribution of the powder is represented by the coefficient of variation (hereinafter also referred to as “CV”) represented by the following formula (1).
C. V. (%) = (Standard deviation / average particle size) x 100 ... (1)
This C.I. V. Larger indicates that the particle size distribution is wider, while C.I. V. A small value indicates that the particle size distribution is sharp. The coated particles of this embodiment are C.I. V. It is preferable to use insulating fine particles of 0.1% or more and 20% or less, more preferably 0.5% or more and 15% or less, and most preferably 1% or more and 10% or less. C. V. However, there is an advantage that the thickness of the coating layer made of the insulating fine particles can be made uniform.
また、絶縁樹脂としては、前記の絶縁性微粒子からなるものに替えて、ポリマーからなりイオン性基を有する連続皮膜であってもよい。絶縁樹脂が、イオン性基を有する連続皮膜である場合、導電性粒子を電極間で熱圧着することで該連続皮膜が溶融、変形又は剥離することにより導電性粒子の金属表面が露出し、これにより電極間での導通を可能とし接続性が得られる。特に、導電性粒子を電極間で熱圧着することで連続皮膜が破けることにより金属表面が露出する場合が多い。一方、導電性粒子における熱圧着方向とは異なる方向を向く表面部分では、連続皮膜による導電性粒子の被覆状態が概ね維持されているため、熱圧着方向以外の方向における導通が防止される。該連続皮膜もイオン性基を表面に有することが好ましい。
Further, the insulating resin may be a continuous film made of a polymer and having an ionic group instead of the above-mentioned insulating fine particles. When the insulating resin is a continuous film having an ionic group, the conductive particles are thermally pressure-bonded between the electrodes to melt, deform or peel off the continuous film, and the metal surface of the conductive particles is exposed. This enables continuity between the electrodes and provides connectivity. In particular, the metal surface is often exposed by tearing the continuous film by thermocompression bonding the conductive particles between the electrodes. On the other hand, in the surface portion of the conductive particles facing a direction different from the thermocompression bonding direction, the coating state of the conductive particles by the continuous film is generally maintained, so that conduction in a direction other than the thermocompression bonding direction is prevented. It is preferable that the continuous film also has an ionic group on the surface.
連続皮膜の厚さは、10nm以上であることが、対向電極間と異なる方向における絶縁性の向上の点から好ましく、3,000nm以下であることが、対向電極間での導通しやすさの点で好ましい。この点から、連続皮膜の厚さは、10nm以上3,000nm以下であることが好ましく、15nm以上2,000nm以下であることがより好ましい。
The thickness of the continuous film is preferably 10 nm or more from the viewpoint of improving the insulating property in a direction different from that between the counter electrodes, and 3,000 nm or less is preferable from the viewpoint of ease of conduction between the counter electrodes. Is preferable. From this point of view, the thickness of the continuous film is preferably 10 nm or more and 3,000 nm or less, and more preferably 15 nm or more and 2,000 nm or less.
絶縁性微粒子と同様、連続皮膜においてイオン性基は、連続皮膜を構成する物質の一部として、該物質の化学構造の一部をなしていることが好ましい。連続皮膜においてイオン性基は、連続皮膜を構成するポリマーの構成単位の少なくとも1種の構造中に含有されていることが好ましい。イオン性基は、連続皮膜を構成するポリマーに化学結合していることが好ましく、より好ましくはポリマーの側鎖に結合している。
Similar to the insulating fine particles, in the continuous film, the ionic group preferably forms a part of the chemical structure of the substance as a part of the substance constituting the continuous film. In the continuous film, the ionic group is preferably contained in at least one structure of the constituent unit of the polymer constituting the continuous film. The ionic group is preferably chemically bonded to the polymer constituting the continuous film, and more preferably bonded to the side chain of the polymer.
絶縁樹脂が連続皮膜である場合、導電性粒子を、その表面にイオン性基を有する絶縁性微粒子で被覆した後、該絶縁性微粒子を加熱させて得られた連続皮膜であることが好ましい。または、該絶縁性微粒子を有機溶剤により溶解させて得られた連続皮膜であることが好ましい。上述したように、イオン性基を有する絶縁性微粒子は、導電性粒子に対し密着しやすく、これによって導電性粒子表面における絶縁性微粒子に被覆される割合が十分なものになるとともに、導電性粒子からの絶縁性微粒子の剥離が防止されやすくなる。このため、導電性粒子を被覆する絶縁性微粒子を加熱又は溶解して得られた連続皮膜は、厚みが均一で且つ導電性粒子表面における被覆割合の高いものとすることができる。
When the insulating resin is a continuous film, it is preferable that the insulating particles are a continuous film obtained by coating the conductive particles with insulating fine particles having an ionic group on the surface and then heating the insulating fine particles. Alternatively, it is preferably a continuous film obtained by dissolving the insulating fine particles with an organic solvent. As described above, the insulating fine particles having an ionic group easily adhere to the conductive particles, whereby the ratio of being covered with the insulating fine particles on the surface of the conductive particles becomes sufficient, and the conductive particles are covered with the insulating fine particles. It becomes easy to prevent the peeling of the insulating fine particles from. Therefore, the continuous film obtained by heating or dissolving the insulating fine particles that coat the conductive particles can have a uniform thickness and a high coating ratio on the surface of the conductive particles.
また本発明の製造方法にかかる導電性粒子は、前記絶縁樹脂との親和性を高めて密着性を優れたものにする目的で、表面処理剤で処理してもよい。
前記表面処理剤としては、例えば、ベンゾトリアゾール系化合物、チタン系化合物、高級脂肪酸又はその誘導体、リン酸エステル及び亜リン酸エステル等が挙げられる。これらは単独で用いてもよいし、必要に応じて複数を組み合わせて用いてもよい。 Further, the conductive particles according to the production method of the present invention may be treated with a surface treatment agent for the purpose of increasing the affinity with the insulating resin and improving the adhesion.
Examples of the surface treatment agent include benzotriazole-based compounds, titanium-based compounds, higher fatty acids or derivatives thereof, phosphoric acid esters, phosphite esters and the like. These may be used alone or in combination of two or more as needed.
前記表面処理剤としては、例えば、ベンゾトリアゾール系化合物、チタン系化合物、高級脂肪酸又はその誘導体、リン酸エステル及び亜リン酸エステル等が挙げられる。これらは単独で用いてもよいし、必要に応じて複数を組み合わせて用いてもよい。 Further, the conductive particles according to the production method of the present invention may be treated with a surface treatment agent for the purpose of increasing the affinity with the insulating resin and improving the adhesion.
Examples of the surface treatment agent include benzotriazole-based compounds, titanium-based compounds, higher fatty acids or derivatives thereof, phosphoric acid esters, phosphite esters and the like. These may be used alone or in combination of two or more as needed.
前記表面処理剤は、導電性粒子における表面の金属と化学的に結合していてもよく、結合していなくてもよい。表面処理剤は、導電性粒子の表面に存在していればよく、その場合、導電性粒子の表面全体に存在していてもよく、表面の一部にのみ存在していてもよい。
The surface treatment agent may or may not be chemically bonded to the metal on the surface of the conductive particles. The surface treatment agent may be present on the surface of the conductive particles, and in that case, it may be present on the entire surface of the conductive particles, or may be present only on a part of the surface.
前記トリアゾール系化合物としては、5員環に3つの窒素原子を有する含窒素複素環構造を有する化合物が挙げられる。
Examples of the triazole-based compound include compounds having a nitrogen-containing heterocyclic structure having three nitrogen atoms in a 5-membered ring.
トリアゾール系化合物としては、他の環と縮合していないトリアゾール単環構造を有する化合物のほか、トリアゾール環と他の環とが縮合した環構造を有する化合物が挙げられる。他の環としては、ベンゼン環、ナフタレン環が挙げられる。
Examples of the triazole-based compound include a compound having a triazole monocyclic structure that is not condensed with another ring, and a compound having a ring structure in which a triazole ring and another ring are condensed. Examples of other rings include a benzene ring and a naphthalene ring.
中でも、絶縁樹脂との密着性に優れることから、トリアゾール環と他の環とが縮合した環構造を有する化合物が好ましく、とりわけトリアゾール環とベンゼン環が縮合した構造を有する化合物であるベンゾトリアゾール系化合物が好ましい。
ベンゾトリアゾール系化合物としては、下記一般式(I)で表されるものが挙げられる。 Among them, a compound having a ring structure in which a triazole ring and another ring are condensed is preferable because of its excellent adhesion to an insulating resin, and a benzotriazole compound which is a compound having a structure in which a triazole ring and a benzene ring are condensed is particularly preferable. Is preferable.
Examples of the benzotriazole-based compound include those represented by the following general formula (I).
ベンゾトリアゾール系化合物としては、下記一般式(I)で表されるものが挙げられる。 Among them, a compound having a ring structure in which a triazole ring and another ring are condensed is preferable because of its excellent adhesion to an insulating resin, and a benzotriazole compound which is a compound having a structure in which a triazole ring and a benzene ring are condensed is particularly preferable. Is preferable.
Examples of the benzotriazole-based compound include those represented by the following general formula (I).
(式中、R11は、負電荷、水素原子、アルカリ金属、置換されていてもよいアルキル基、アミノ基、ホルミル基、ヒドロキシル基、アルコキシ基、スルホン酸基又はシリル基であり、R12、R13、R14及びR15はそれぞれ独立に、水素原子、ハロゲン原子、置換されていてもよいアルキル基、カルボキシル基、ヒドロキシル基又はニトロ基である。)
(In the formula, R 11 is a negative charge, a hydrogen atom, an alkali metal, an optionally substituted alkyl group, an amino group, a formyl group, a hydroxyl group, an alkoxy group, a sulfonic acid group or a silyl group, and R 12 ,. R 13 , R 14 and R 15 are independently hydrogen atoms, halogen atoms, optionally substituted alkyl groups, carboxyl groups, hydroxyl groups or nitro groups.)
式(I)におけるR11で表されるアルカリ金属としては、リチウム、ナトリウム、カリウム等が挙げられる。R11で表されるアルカリ金属は、アルカリ金属陽イオンであり、式(I)におけるR11がアルカリ金属である場合、R11と窒素原子との結合はイオン結合となっていてもよい。
式(I)におけるR11、R12、R13、R14及びR15で表されるアルキル基としては、炭素数1~20のものが挙げられ、炭素数1~12が特に好ましい。当該アルキル基は、置換されていてもよく、置換基としてはアミノ基、アルコキシ基、カルボキシル基、ヒドロキシル基、アルデヒド基、ニトロ基、スルホン酸基、第四級アンモニウム基、スルホニウム基、スルホニル基、ホスホニウム基、シアノ基、フルオロアルキル基、メルカプト基、及びハロゲン原子が挙げられる。
R11で表されるアルコキシ基としては、炭素数が1~12のものが好ましく挙げられる。
また、R12、R13、R14及びR15で表されるアルキル基の置換基としてのアルコキシ基の炭素数は1~12であることが好ましい。式(I)におけるR12、R13、R14及びR15で表されるハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられる。 Examples of the alkali metal represented by R 11 in the formula (I) include lithium, sodium, potassium and the like. The alkali metal represented by R 11 is an alkali metal cation, and when R 11 in the formula (I) is an alkali metal, the bond between R 11 and the nitrogen atom may be an ionic bond.
Examples of the alkyl group represented by R 11 , R 12 , R 13 , R 14 and R 15 in the formula (I) include those having 1 to 20 carbon atoms, and 1 to 12 carbon atoms are particularly preferable. The alkyl group may be substituted, and the substituents include an amino group, an alkoxy group, a carboxyl group, a hydroxyl group, an aldehyde group, a nitro group, a sulfonic acid group, a quaternary ammonium group, a sulfonium group and a sulfonyl group. Examples include a phosphonium group, a cyano group, a fluoroalkyl group, a mercapto group, and a halogen atom.
As the alkoxy group represented by R 11 , those having 1 to 12 carbon atoms are preferably mentioned.
Further, the number of carbon atoms of the alkoxy group as a substituent of the alkyl group represented by R 12 , R 13 , R 14 and R 15 is preferably 1 to 12. Examples of the halogen atom represented by R 12 , R 13 , R 14 and R 15 in the formula (I) include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like.
式(I)におけるR11、R12、R13、R14及びR15で表されるアルキル基としては、炭素数1~20のものが挙げられ、炭素数1~12が特に好ましい。当該アルキル基は、置換されていてもよく、置換基としてはアミノ基、アルコキシ基、カルボキシル基、ヒドロキシル基、アルデヒド基、ニトロ基、スルホン酸基、第四級アンモニウム基、スルホニウム基、スルホニル基、ホスホニウム基、シアノ基、フルオロアルキル基、メルカプト基、及びハロゲン原子が挙げられる。
R11で表されるアルコキシ基としては、炭素数が1~12のものが好ましく挙げられる。
また、R12、R13、R14及びR15で表されるアルキル基の置換基としてのアルコキシ基の炭素数は1~12であることが好ましい。式(I)におけるR12、R13、R14及びR15で表されるハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられる。 Examples of the alkali metal represented by R 11 in the formula (I) include lithium, sodium, potassium and the like. The alkali metal represented by R 11 is an alkali metal cation, and when R 11 in the formula (I) is an alkali metal, the bond between R 11 and the nitrogen atom may be an ionic bond.
Examples of the alkyl group represented by R 11 , R 12 , R 13 , R 14 and R 15 in the formula (I) include those having 1 to 20 carbon atoms, and 1 to 12 carbon atoms are particularly preferable. The alkyl group may be substituted, and the substituents include an amino group, an alkoxy group, a carboxyl group, a hydroxyl group, an aldehyde group, a nitro group, a sulfonic acid group, a quaternary ammonium group, a sulfonium group and a sulfonyl group. Examples include a phosphonium group, a cyano group, a fluoroalkyl group, a mercapto group, and a halogen atom.
As the alkoxy group represented by R 11 , those having 1 to 12 carbon atoms are preferably mentioned.
Further, the number of carbon atoms of the alkoxy group as a substituent of the alkyl group represented by R 12 , R 13 , R 14 and R 15 is preferably 1 to 12. Examples of the halogen atom represented by R 12 , R 13 , R 14 and R 15 in the formula (I) include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like.
具体的なトリアゾール系化合物としては、トリアゾール単環構造を有する化合物として1,2,3-トリアゾ-ル、1,2,4-トリアゾール、3-アミノ-1H-1,2,4-トリアゾール、5-メルカプト-1H-1,2,3-トリアゾールナトリウム、4-アミノ-3-ヒドラジノ-5-メルカプト-1,2,4-トリアゾール、3-アミノ-5-メルカプト-1,2,4-トリアゾール、が挙げられるほか、トリアゾール環と他の環とが縮合した環構造を有するベンゾトリアゾール、1-メチル-1H-ベンゾトリアゾール、4-メチル-1H-ベンゾトリアゾール、5-メチル-1H-ベンゾトリアゾール、4-カルボキシ-1H-ベンゾトリアゾール、5-カルボキシ-1H-ベンゾトリアゾール、5-エチル-1H-ベンゾトリアゾール、5-プロピル-1H-ベンゾトリアゾール、5,6-ジメチル-1H-ベンゾトリアゾール、1-アミノベンゾトリアゾール、5-ニトロベンゾトリアゾール、5-クロロベンゾトリアゾール、4,5,6,7-テトラブロモベンゾトリアゾール、1-ヒドロキシベンゾトリアゾール、1-(メトキシメチル)-1H-ベンゾトリアゾール、1H-ベンゾトリアゾール-1-メタノール、1H-ベンゾトリアゾール-1-カルボキシアルデヒド、1-(クロロメチル)-1H-ベンゾトリアゾール、1-ヒドロキシ-6-(トリフルオロメチル)ベンゾトリアゾール、ベンゾトリアゾールブチルエステル、4-カルボキシル-1H-ベンゾトリアゾールブチルエステル、4-カルボキシル-1H-ベンゾトリアゾールオクチルエステル、1-[N,N-ビス(2-エチルヘキシル)アミノメチル]メチルベンゾトリアゾール、2,2’-[[(メチル-1H-ベンゾトリアゾール-1-イル)メチル]イミノ]ビスエタノール、テトラブチルホスホニウムベンゾトリアゾラート、1H-ベンゾトリアゾール-1-イルオキシトリス(ジメチルアミノ)ホスホニウムヘキサフルオロホスファート、1H-ベンゾトリアゾール-1-イルオキシトリピロリジノホスホニウムヘキサフルオロホスファート、1-(ホルムアミドメチル)-1H-ベンゾトリアゾール、1-[ビス(ジメチルアミノ)メチレン]-1H-ベンゾトリアゾリウム3-オキシドヘキサフルオロホスファート、1-[ビス(ジメチルアミノ)メチレン]-1H-ベンゾトリアゾリウム3-オキシドテトラフルオロボラート、(6-クロロ-1H-ベンゾトリアゾール-1-イルオキシ)トリピロリジノホスホニウムヘキサフルオロホスファート、O-(ベンゾトリアゾール-1-イル)-N,N,N’,N’-ビス(テトラメチレン)ウロニウムヘキサフルオロホスファート、O-(6-クロロベンゾトリアゾール-1-イル)-N,N,N’,N’-テトラメチルウロニウムテトラフルオロボラート、O-(6-クロロベンゾトリアゾール-1-イル)-N,N,N’,N’-テトラメチルウロニウムヘキサフルオロホスファート、O-(ベンゾトリアゾール-1-イル)-N,N,N’,N’-ビス(ペンタメチレン)ウロニウムヘキサフルオロホスファート、1-(トリメチルシリル)-1H-ベンゾトリアゾール、1-[2-(トリメチルシリル)エトキシカルボニルオキシ]ベンゾトリアゾール、1-(トリフルオロメタンスルホニル)-1H-ベンゾトリアゾール、(トリフルオロアセチル)ベンゾトリアゾール、トリス(1H-ベンゾトリアゾール-1-イル)メタン、9-(1H-ベンゾトリアゾール-1-イルメチル)-9H-カルバゾール、[(1H-ベンゾトリアゾール-1-イル)メチル]トリフェニルホスホニウムクロリド、1-(イソシアノメチル)-1H-ベンゾトリアゾール、1-[(9H-フルオレン-9-イルメトキシ)カルボニルオキシ]ベンゾトリアゾール、1,2,3-ベンゾトリアゾールナトリウム塩、ナフトトリアゾール等が挙げられる。
Specific triazole-based compounds include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, and 5 as compounds having a triazole monocyclic structure. -Mercapto-1H-1,2,3-triazole sodium, 4-amino-3-hydrazino-5-mercapto-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole, In addition, benzotriazole having a ring structure in which a triazole ring and another ring are condensed, 1-methyl-1H-benzotriazole, 4-methyl-1H-benzotriazole, 5-methyl-1H-benzotriazole, 4 -Carboxy-1H-benzotriazole, 5-carboxy-1H-benzotriazole, 5-ethyl-1H-benzotriazole, 5-propyl-1H-benzotriazole, 5,6-dimethyl-1H-benzotriazole, 1-aminobenzo Triazole, 5-nitrobenzotriazole, 5-chlorobenzotriazole, 4,5,6,7-tetrabromobenzotriazole, 1-hydroxybenzotriazole, 1- (methoxymethyl) -1H-benzotriazole, 1H-benzotriazole- 1-Methanol, 1H-benzotriazole-1-carboxyaldehyde, 1- (chloromethyl) -1H-benzotriazole, 1-hydroxy-6- (trifluoromethyl) benzotriazole, benzotriazole butyl ester, 4-carboxy-1H -Benzotriazole butyl ester, 4-carboxy-1H-benzotriazole octyl ester, 1- [N, N-bis (2-ethylhexyl) aminomethyl] methylbenzotriazole, 2,2'-[[(methyl-1H-benzo) Triazole-1-yl) methyl] imino] bisethanol, tetrabutylphosphonium benzotriazolate, 1H-benzotriazole-1-yloxytris (dimethylamino) phosphonium hexafluorophosphart, 1H-benzotriazole-1-yloxy Tripyrolidinophosphonium hexafluorophosphate, 1- (formamide methyl) -1H-benzotriazole, 1- [bis (dimethylamino) methylene] -1H-benzotriazolium 3-oxide hexafluorophosphate, 1- [bis (Dimethylamino) Methylene] -1H-benzotriazolium 3-oxidetet Lafluoroborate, (6-chloro-1H-benzotriazole-1-yloxy) tripyrolidinophosphonium hexafluorophosphate, O- (benzotriazole-1-yl) -N, N, N', N'-bis (Tetramethylene) Uronium hexafluorophosphate, O- (6-chlorobenzotriazole-1-yl) -N, N, N', N'-tetramethyluronium tetrafluoroborate, O- (6-chloro Benzotriazole-1-yl) -N, N, N', N'-tetramethyluronium hexafluorophosphate, O- (benzotriazole-1-yl) -N, N, N', N'-bis ( Pentamethylene) uronium hexafluorophosphate, 1- (trimethylsilyl) -1H-benzotriazole, 1- [2- (trimethylsilyl) ethoxycarbonyloxy] benzotriazole, 1- (trifluoromethanesulfonyl) -1H-benzotriazole, ( Trifluoroacetyl) Benzotriazole, Tris (1H-benzotriazole-1-yl) methane, 9- (1H-benzotriazole-1-ylmethyl) -9H-carbazole, [(1H-benzotriazole-1-yl) methyl] Triphenylphosphonium chloride, 1- (isocyanomethyl) -1H-benzotriazole, 1-[(9H-fluoren-9-ylmethoxy) carbonyloxy] benzotriazole, 1,2,3-benzotriazole sodium salt, naphthotriazole, etc. Can be mentioned.
前記チタン系化合物としては、例えば一般式(II)で表される構造を有する化合物が、導電性粒子の表面に有する場合に絶縁樹脂と導電性粒子との親和性を容易に得られる点や溶媒に分散し易く導電性粒子表面を均一に処理できる点で特に好ましい。
As the titanium-based compound, for example, when a compound having a structure represented by the general formula (II) is present on the surface of conductive particles, an affinity between the insulating resin and the conductive particles can be easily obtained and a solvent. It is particularly preferable because it is easy to disperse in the particle and the surface of the conductive particles can be uniformly treated.
(R21は2価又は3価の基であり、R22は炭素原子数2以上30以下の脂肪族炭化水素基、炭素原子数6以上22以下のアリール基又は炭素原子数7以上23以下のアリールアルキル基であり、p及びrはそれぞれ1以上3以下の整数であり、p+r=4を満たし、qは1又は2である整数であり、R21が2価の基である場合、qは1であり、R21が3価の基である場合、qは2である。qが2である場合、複数のR22は同一であっても異なってもよい。*は結合手を表す。)
(R 21 is a divalent or trivalent group, R 22 is an aliphatic hydrocarbon group having 2 or more and 30 or less carbon atoms, an aryl group having 6 or more and 22 or less carbon atoms, or 7 or more and 23 or less carbon atoms. If it is an arylalkyl group, p and r are integers of 1 or more and 3 or less, satisfy p + r = 4, q is an integer of 1 or 2, and R 21 is a divalent group, q is. When it is 1 and R 21 is a trivalent group, q is 2. When q is 2, a plurality of R 22s may be the same or different. * Represents a bond. )
R22で表される炭素原子数4以上28以下の脂肪族炭化水素基の例としては、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、イコシル基、ヘンイコシル基、ドコシル基等が挙げられる。不飽和脂肪族炭化水素基の例としては、アルケニル基として、ドデセニル基、トリデセニル基、テトラデセニル基、ペンタデセニル基、ヘキサデセニル基、ヘプタデセニル基、ノナデセニル基、イコセニル基、エイコセニル基、ヘンイコセニル基、ドコセニル基が挙げられる。 炭素原子数6以上22以下のアリール基としては、フェニル基、トリル基、ナフチル基、アントリル基等が挙げられる。
炭素原子数7以上23以下のアリールアルキル基としては、ベンジル基、フェネチル基、ナフチルメチル基等が挙げられる。
疎水性基としては直鎖状又は分岐鎖状の脂肪族炭化水素基が特に好ましく、直鎖状の脂肪族炭化水素基がとりわけ好ましい。
絶縁樹脂と導電性粒子との親和性を高める点から、疎水性基としての脂肪族炭化水素基としては、特に炭素原子数4以上28以下のものが更に好ましく、6以上24以下のものが最も好ましい。 Examples of the aliphatic hydrocarbon group having 4 or more and 28 or less carbon atoms represented by R 22 include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group and a nonyl group. , Decyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, henicosyl group, docosyl group and the like. Examples of unsaturated aliphatic hydrocarbon groups include dodecenyl group, tridecenyl group, tetradecenyl group, pentadecenyl group, hexadecenyl group, heptadecenyl group, nonadesenyl group, icosenyl group, eicosenyl group, henicosenyl group and docosenyl group as alkenyl groups. Be done. Examples of the aryl group having 6 or more and 22 or less carbon atoms include a phenyl group, a tolyl group, a naphthyl group, an anthryl group and the like.
Examples of the arylalkyl group having 7 or more and 23 or less carbon atoms include a benzyl group, a phenethyl group, a naphthylmethyl group and the like.
As the hydrophobic group, a linear or branched aliphatic hydrocarbon group is particularly preferable, and a linear aliphatic hydrocarbon group is particularly preferable.
As the aliphatic hydrocarbon group as the hydrophobic group, those having 4 or more and 28 or less carbon atoms are more preferable, and those having 6 or more and 24 or less are the most preferable, from the viewpoint of enhancing the affinity between the insulating resin and the conductive particles. preferable.
炭素原子数7以上23以下のアリールアルキル基としては、ベンジル基、フェネチル基、ナフチルメチル基等が挙げられる。
疎水性基としては直鎖状又は分岐鎖状の脂肪族炭化水素基が特に好ましく、直鎖状の脂肪族炭化水素基がとりわけ好ましい。
絶縁樹脂と導電性粒子との親和性を高める点から、疎水性基としての脂肪族炭化水素基としては、特に炭素原子数4以上28以下のものが更に好ましく、6以上24以下のものが最も好ましい。 Examples of the aliphatic hydrocarbon group having 4 or more and 28 or less carbon atoms represented by R 22 include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group and a nonyl group. , Decyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, henicosyl group, docosyl group and the like. Examples of unsaturated aliphatic hydrocarbon groups include dodecenyl group, tridecenyl group, tetradecenyl group, pentadecenyl group, hexadecenyl group, heptadecenyl group, nonadesenyl group, icosenyl group, eicosenyl group, henicosenyl group and docosenyl group as alkenyl groups. Be done. Examples of the aryl group having 6 or more and 22 or less carbon atoms include a phenyl group, a tolyl group, a naphthyl group, an anthryl group and the like.
Examples of the arylalkyl group having 7 or more and 23 or less carbon atoms include a benzyl group, a phenethyl group, a naphthylmethyl group and the like.
As the hydrophobic group, a linear or branched aliphatic hydrocarbon group is particularly preferable, and a linear aliphatic hydrocarbon group is particularly preferable.
As the aliphatic hydrocarbon group as the hydrophobic group, those having 4 or more and 28 or less carbon atoms are more preferable, and those having 6 or more and 24 or less are the most preferable, from the viewpoint of enhancing the affinity between the insulating resin and the conductive particles. preferable.
R21で表される2価の基としては、-O-、-COO-、-OCO-、-OSO2-等が挙げられる。R21で表される3価の基としては、-P(OH)(O-)2、-OPO(OH)-OPO(O-)2等が挙げられる。
Examples of the divalent group represented by R 21 include -O-, -COO-, -OCO-, -OSO 2- and the like. Examples of the trivalent group represented by R 21 include -P (OH) (O-) 2 , -OPO (OH) -OPO (O-) 2, and the like.
一般式(II)において*は結合手であり、当該結合手は導電性粒子の金属皮膜に結合していてもよく、或いは、他の基等に結合していてもよい。その場合の他の基等としては、例えば、炭化水素基が挙げられ、具体的には炭素原子数1以上12以下のアルキル基が挙げられる。
In the general formula (II), * is a bond, and the bond may be bonded to the metal film of the conductive particles, or may be bonded to another group or the like. Examples of other groups in that case include hydrocarbon groups, and specific examples thereof include alkyl groups having 1 or more and 12 or less carbon atoms.
一般式(II)で表される構造を有するチタン系化合物としては、一般式(II)におけるR21が2価の基である構造を有する化合物が、入手容易性や導電性粒子の導電特性を損なうことなく処理できる点で好ましい。一般式(II)においてR21が2価の基である構造は、下記一般式(III)で表される。
As the titanium-based compound having the structure represented by the general formula (II), the compound having the structure in which R 21 is a divalent group in the general formula (II) has the availability and the conductive property of the conductive particles. It is preferable in that it can be processed without damage. The structure in which R 21 is a divalent group in the general formula (II) is represented by the following general formula (III).
(R21は、-O-、-COO-、-OCO-、-OSO2-から選ばれる基であり、p、r及びR22は一般式(II)と同義である。)
(R 21 is a group selected from -O-, -COO-, -OCO-, and -OSO 2- , and p, r and R 22 are synonymous with the general formula (II).)
一般式(II)及び(III)において、rは2又は3であることが、絶縁樹脂と導電層の密着性が上がる観点で好ましく、rが3であることが最も好ましい。
In the general formulas (II) and (III), r is preferably 2 or 3, from the viewpoint of improving the adhesion between the insulating resin and the conductive layer, and r is most preferably 3.
本発明に用いられるチタネート系カップリング剤の具体例としては、イソプロピルトリイソステアロイルチタネート、イソプロピルトリドデシルベンゼンスルホニルチタネート、イソプロピルトリス(ジオクチルパイロホスフェート)チタネート、テトライソプロピル(ジオクチルホスファイト)チタネート、テトライソプロピルビス(ジオクチルホスファイト)チタネート、テトラオクチルビス(ジトリデシルホスファイト)チタネート、テトラ(2,2-ジアリルオキシメチル-1-ブチル)ビス(ジトリデシル)ホスファイトチタネート、ビス(ジオクチルパイロホスフェート)オキシアセテートチタネート、ビス(ジオクチルパイロホスフェート)エチレンチタネート等が挙げられ、これらは1種又は2種以上で用いることができる。
なお、これらのチタネート系カップリング剤は、例えば、味の素ファインテクノ株式会社から市販されている。 Specific examples of the titanate-based coupling agent used in the present invention include isopropyltriisostearoyl titanate, isopropyltridodecylbenzenesulfonyl titanate, isopropyltris (dioctylpyrophosphate) titanate, tetraisopropyl (dioctylphosphite) titanate, and tetraisopropylbis. (Dioctylphosphite) titanate, tetraoctylbis (ditridecylphosphite) titanate, tetra (2,2-diallyloxymethyl-1-butyl) bis (ditridecyl) phosphite titanate, bis (dioctylpyrophosphate) oxyacetate titanate, Examples thereof include bis (dioctylpyrophosphate) ethylene titanate, and these can be used in one kind or two or more kinds.
These titanate-based coupling agents are commercially available, for example, from Ajinomoto Fine-Techno Co., Ltd.
なお、これらのチタネート系カップリング剤は、例えば、味の素ファインテクノ株式会社から市販されている。 Specific examples of the titanate-based coupling agent used in the present invention include isopropyltriisostearoyl titanate, isopropyltridodecylbenzenesulfonyl titanate, isopropyltris (dioctylpyrophosphate) titanate, tetraisopropyl (dioctylphosphite) titanate, and tetraisopropylbis. (Dioctylphosphite) titanate, tetraoctylbis (ditridecylphosphite) titanate, tetra (2,2-diallyloxymethyl-1-butyl) bis (ditridecyl) phosphite titanate, bis (dioctylpyrophosphate) oxyacetate titanate, Examples thereof include bis (dioctylpyrophosphate) ethylene titanate, and these can be used in one kind or two or more kinds.
These titanate-based coupling agents are commercially available, for example, from Ajinomoto Fine-Techno Co., Ltd.
高級脂肪酸としては、飽和又は不飽和の直鎖又は分枝鎖のモノ又はポリカルボン酸であることが好ましく、飽和又は不飽和の直鎖又は分枝鎖のモノカルボン酸であることが更に好ましく、飽和又は不飽和の直鎖モノカルボン酸であることが一層好ましい。脂肪酸は、その炭素数が好ましくは7以上である。また、誘導体とは、前記脂肪酸の塩又はアミドを指す。
The higher fatty acid is preferably a saturated or unsaturated linear or branched mono or polycarboxylic acid, more preferably a saturated or unsaturated linear or branched monocarboxylic acid. More preferably, it is a saturated or unsaturated linear monocarboxylic acid. The fatty acid preferably has 7 or more carbon atoms. The derivative refers to a salt or amide of the fatty acid.
本発明に用いられる高級脂肪酸又はその誘導体は、高級脂肪酸の炭素数が好ましくは7~23であり、更に好ましくは10~20である。このような高級脂肪酸又はその誘導体としては、例えばカプリン酸、ラウリル酸、ミリスチン酸、パルミチン酸、ステアリン酸等の飽和脂肪酸、オレイン酸、リノール酸、リノレン酸、アラキドン酸等の不飽和脂肪酸、又はこれらの金属塩若しくはアミド等が挙げられる。高級脂肪酸の金属塩としては、アルカリ金属、アルカリ土類金属、Zr、Cr、Mn、Fe、Co、Ni、Cu、Ag等の遷移金属、及びAl、Zn等の遷移金属以外の他の金属の塩が挙げられ、好ましくはAl、Zn、W、V等の多価金属塩である。高級脂肪酸金属塩は、金属の価数に応じて、モノ体、ジ体、トリ体、テトラ体等であり得る。高級脂肪酸金属塩は、これらの任意の組み合わせであってもよい。
The higher fatty acid or its derivative used in the present invention preferably has 7 to 23 carbon atoms, more preferably 10 to 20 carbon atoms. Examples of such higher fatty acids or derivatives thereof include saturated fatty acids such as capric acid, lauric acid, myristic acid, palmitic acid and stearic acid, unsaturated fatty acids such as oleic acid, linoleic acid, linolenic acid and arachidonic acid, or these. Metal salts or amides of the above can be mentioned. Examples of the metal salt of the higher fatty acid include alkali metals, alkaline earth metals, transition metals such as Zr, Cr, Mn, Fe, Co, Ni, Cu and Ag, and metals other than transition metals such as Al and Zn. Examples thereof include polyvalent metal salts such as Al, Zn, W and V. The higher fatty acid metal salt may be a mono-form, a di-form, a tri-form, a tetra-form or the like, depending on the valence of the metal. The higher fatty acid metal salt may be any combination thereof.
リン酸エステル及び亜リン酸エステルとしては、炭素数6~22のアルキル基を有するものが、好ましく用いられる。
リン酸エステルとしては、例えば、リン酸ヘキシルエステル、リン酸ヘプチルエステル、リン酸モノオクチルエステル、リン酸モノノニルエステル、リン酸モノデシルエステル、リン酸モノウンデシルエステル、リン酸モノドデシルエステル、リン酸モノトリデシルエステル、リン酸モノテトラデシルエステル、リン酸モノペンタデシルエステル等が挙げられる。
亜リン酸エステルとしては、例えば、亜リン酸ヘキシルエステル、亜リン酸ヘプチルエステル、亜リン酸モノオクチルエステル、亜リン酸モノノニルエステル、亜リン酸モノデシルエステル、亜リン酸モノウンデシルエステル、亜リン酸モノドデシルエステル、亜リン酸モノトリデシルエステル、亜リン酸モノテトラデシルエステル、亜リン酸モノペンタデシルエステル等が挙げられる。 As the phosphoric acid ester and the phosphite ester, those having an alkyl group having 6 to 22 carbon atoms are preferably used.
Examples of the phosphoric acid ester include phosphoric acid hexyl ester, phosphoric acid heptyl ester, phosphoric acid monooctyl ester, phosphoric acid monononyl ester, phosphoric acid monodecyl ester, phosphoric acid monoundecyl ester, phosphoric acid monododecyl ester, and phosphorus. Examples thereof include acid monotridecyl ester, phosphoric acid monotetradecyl ester, and phosphoric acid monopentadecyl ester.
Examples of the phosphite ester include succinic acid hexyl ester, succinic acid heptyl ester, sulphate monooctyl ester, sulphate monononyl ester, sulphate monodecyl ester, and sulphate monoundecyl ester. Examples thereof include phosphite monododecyl ester, sulphate monotridecyl ester, sulphate monotetradecyl ester, and sulphate monopentadecyl ester.
リン酸エステルとしては、例えば、リン酸ヘキシルエステル、リン酸ヘプチルエステル、リン酸モノオクチルエステル、リン酸モノノニルエステル、リン酸モノデシルエステル、リン酸モノウンデシルエステル、リン酸モノドデシルエステル、リン酸モノトリデシルエステル、リン酸モノテトラデシルエステル、リン酸モノペンタデシルエステル等が挙げられる。
亜リン酸エステルとしては、例えば、亜リン酸ヘキシルエステル、亜リン酸ヘプチルエステル、亜リン酸モノオクチルエステル、亜リン酸モノノニルエステル、亜リン酸モノデシルエステル、亜リン酸モノウンデシルエステル、亜リン酸モノドデシルエステル、亜リン酸モノトリデシルエステル、亜リン酸モノテトラデシルエステル、亜リン酸モノペンタデシルエステル等が挙げられる。 As the phosphoric acid ester and the phosphite ester, those having an alkyl group having 6 to 22 carbon atoms are preferably used.
Examples of the phosphoric acid ester include phosphoric acid hexyl ester, phosphoric acid heptyl ester, phosphoric acid monooctyl ester, phosphoric acid monononyl ester, phosphoric acid monodecyl ester, phosphoric acid monoundecyl ester, phosphoric acid monododecyl ester, and phosphorus. Examples thereof include acid monotridecyl ester, phosphoric acid monotetradecyl ester, and phosphoric acid monopentadecyl ester.
Examples of the phosphite ester include succinic acid hexyl ester, succinic acid heptyl ester, sulphate monooctyl ester, sulphate monononyl ester, sulphate monodecyl ester, and sulphate monoundecyl ester. Examples thereof include phosphite monododecyl ester, sulphate monotridecyl ester, sulphate monotetradecyl ester, and sulphate monopentadecyl ester.
本発明において、表面処理剤は、絶縁樹脂との親和性に優れ、また、絶縁樹脂の被覆率を高める効果が高い点で、トリアゾール系化合物、チタン系化合物が好ましく、特にベンゾトリアゾール、4-カルボキシベンゾトリアゾール、イソプロピルトリイソステアロイルチタネート、テトライソプロピル(ジオクチルホスファイト)チタネートが特に好ましい。
In the present invention, the surface treatment agent is preferably a triazole-based compound or a titanium-based compound, and is particularly benzotriazole or 4-carboxyl, because it has an excellent affinity with the insulating resin and has a high effect of increasing the coverage of the insulating resin. Benzotriazole, isopropyltriisostearoyl titanate, and tetraisopropyl (dioctylphosphite) titanate are particularly preferred.
導電性粒子を表面処理剤により処理する方法は、導電性粒子を表面処理剤の溶液中で分散させた後、ろ過することで得られる。表面処理剤による処理前において、導電性粒子は別の処理剤で処理されていてもよく、未処理であってもよい。
導電性粒子を分散させる表面処理剤の溶液(導電性粒子を含む溶液)における表面処理剤の濃度としては、0.01質量%以上10.0質量%以下が挙げられる。また表面処理剤の溶液における溶媒は、水、メタノール、エタノール、1-プロパノール、2-プロパノール、1-ブタノール、2-ブタノール、イソブチルアルコール、イソペンチルアルコール、シクロヘキサノール、などのアルコール類、アセトン、メチルイソブチルケトン、メチルエチルケトン、メチル-n-ブチルケトン、などのケトン類、酢酸メチル、酢酸エチル、などのエステル類、ジエチルエーテル、エチレングリコールモノエチルエーテルなどのエーテル類、ノルマルヘキサン、シクロヘキサノン、トルエン、1,4-ジオキサン、N,N-ジメチルホルムアミド、テトラヒドロフラン等が挙げられる。分散、ろ過した表面処理後の導電性粒子は、再度溶媒中に分散させて過剰の表面処理剤を除去することが好ましい。 The method of treating the conductive particles with a surface treatment agent is obtained by dispersing the conductive particles in a solution of the surface treatment agent and then filtering the particles. Before the treatment with the surface treatment agent, the conductive particles may be treated with another treatment agent or may not be treated.
The concentration of the surface treatment agent in the solution of the surface treatment agent for dispersing the conductive particles (solution containing the conductive particles) is 0.01% by mass or more and 10.0% by mass or less. The solvent in the solution of the surface treatment agent is water, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutyl alcohol, isopentyl alcohol, cyclohexanol, and other alcohols, acetone, and methyl. Ketones such as isobutyl ketone, methyl ethyl ketone, methyl-n-butyl ketone, esters such as methyl acetate and ethyl acetate, ethers such as diethyl ether and ethylene glycol monoethyl ether, normal hexane, cyclohexanone, toluene, 1,4 -Dioxane, N, N-dimethylformamide, tetrahydrofuran and the like can be mentioned. It is preferable that the dispersed and filtered conductive particles after the surface treatment are dispersed in the solvent again to remove the excess surface treatment agent.
導電性粒子を分散させる表面処理剤の溶液(導電性粒子を含む溶液)における表面処理剤の濃度としては、0.01質量%以上10.0質量%以下が挙げられる。また表面処理剤の溶液における溶媒は、水、メタノール、エタノール、1-プロパノール、2-プロパノール、1-ブタノール、2-ブタノール、イソブチルアルコール、イソペンチルアルコール、シクロヘキサノール、などのアルコール類、アセトン、メチルイソブチルケトン、メチルエチルケトン、メチル-n-ブチルケトン、などのケトン類、酢酸メチル、酢酸エチル、などのエステル類、ジエチルエーテル、エチレングリコールモノエチルエーテルなどのエーテル類、ノルマルヘキサン、シクロヘキサノン、トルエン、1,4-ジオキサン、N,N-ジメチルホルムアミド、テトラヒドロフラン等が挙げられる。分散、ろ過した表面処理後の導電性粒子は、再度溶媒中に分散させて過剰の表面処理剤を除去することが好ましい。 The method of treating the conductive particles with a surface treatment agent is obtained by dispersing the conductive particles in a solution of the surface treatment agent and then filtering the particles. Before the treatment with the surface treatment agent, the conductive particles may be treated with another treatment agent or may not be treated.
The concentration of the surface treatment agent in the solution of the surface treatment agent for dispersing the conductive particles (solution containing the conductive particles) is 0.01% by mass or more and 10.0% by mass or less. The solvent in the solution of the surface treatment agent is water, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutyl alcohol, isopentyl alcohol, cyclohexanol, and other alcohols, acetone, and methyl. Ketones such as isobutyl ketone, methyl ethyl ketone, methyl-n-butyl ketone, esters such as methyl acetate and ethyl acetate, ethers such as diethyl ether and ethylene glycol monoethyl ether, normal hexane, cyclohexanone, toluene, 1,4 -Dioxane, N, N-dimethylformamide, tetrahydrofuran and the like can be mentioned. It is preferable that the dispersed and filtered conductive particles after the surface treatment are dispersed in the solvent again to remove the excess surface treatment agent.
導電性粒子の表面処理剤による表面処理は、室温で導電性粒子と表面処理剤と溶媒を混合することにより処理することができる。あるいは、導電性粒子と表面処理剤を溶媒中で混合後、加熱して反応を促進してもよい。加熱温度は例えば30℃以上50℃以下が挙げられる。
The surface treatment of the conductive particles with the surface treatment agent can be performed by mixing the conductive particles, the surface treatment agent and the solvent at room temperature. Alternatively, the conductive particles and the surface treatment agent may be mixed in a solvent and then heated to accelerate the reaction. The heating temperature is, for example, 30 ° C. or higher and 50 ° C. or lower.
本発明の導電性粒子は、接続抵抗が低いため、例えば異方性導電フィルム(ACF)やヒートシールコネクタ(HSC)、液晶ディスプレーパネルの電極を駆動用LSIチップの回路基板へ接続するための導電性材料として好適に使用される。該導電性材料としては、本発明の導電性粒子のそのままの使用、又は本発明の導電性粒子をバインダー樹脂に分散してなるものが挙げられる。導電性材料のその他の形態は特に限定されず、上記したものの他には、例えば、異方性導電ペースト、導電性接着剤、異方性導電インク等の形態が挙げられる。
Since the conductive particles of the present invention have low connection resistance, they are conductive for connecting, for example, an anisotropic conductive film (ACF), a heat-sealed connector (HSC), or an electrode of a liquid crystal display panel to a circuit board of a driving LSI chip. It is suitably used as a sex material. Examples of the conductive material include the use of the conductive particles of the present invention as they are, or the use of the conductive particles of the present invention dispersed in a binder resin. Other forms of the conductive material are not particularly limited, and examples thereof include an anisotropic conductive paste, a conductive adhesive, and an anisotropic conductive ink.
前記バインダー樹脂としては、熱可塑性樹脂又は熱硬化性樹脂等が挙げられる。熱可塑性樹脂としては、例えば、アクリル樹脂、スチレン樹脂、エチレン-酢酸ビニル樹脂、スチレン-ブタジエンブロック共重合体等が挙げられ、熱硬化性樹脂としては、例えば、エポキシ樹脂、フェノール樹脂、尿素樹脂、ポリエステル樹脂、ウレタン樹脂、ポリイミド樹脂等が挙げられる。
Examples of the binder resin include thermoplastic resins and thermosetting resins. Examples of the thermoplastic resin include acrylic resin, styrene resin, ethylene-vinyl acetate resin, styrene-butadiene block copolymer and the like, and examples of the thermosetting resin include epoxy resin, phenol resin and urea resin. Examples thereof include polyester resin, urethane resin, and polyimide resin.
前記導電性材料は、本発明の導電性粒子及びバインダー樹脂の他に、必要に応じて粘着付与剤、反応性助剤、エポキシ樹脂硬化剤、金属酸化物、光開始剤、増感剤、硬化剤、加硫剤、劣化防止剤、耐熱添加剤、熱伝導向上剤、軟化剤、着色剤、各種カップリング剤又は金属不活性剤等を配合することができる。
In addition to the conductive particles and the binder resin of the present invention, the conductive material includes a tackifier, a reactive aid, an epoxy resin curing agent, a metal oxide, a photoinitiator, a sensitizer, and curing, if necessary. Agents, vulcanizers, deterioration inhibitors, heat resistant additives, heat conduction improvers, softeners, colorants, various coupling agents, metal deactivators and the like can be blended.
前記導電性材料において、導電性粒子の使用量は、用途に応じて適宜決定すればよいが、導電性粒子同士が接触することなく電気的導通を得やすくする観点から、例えば導電性材料100質量部に対して0.01質量部以上50質量部以下、特に0.03質量部以上40質量部以下であることが好ましい。
In the conductive material, the amount of the conductive particles used may be appropriately determined according to the intended use, but from the viewpoint of facilitating electrical conduction without contacting the conductive particles, for example, 100 mass of the conductive material. It is preferably 0.01 parts by mass or more and 50 parts by mass or less, particularly preferably 0.03 parts by mass or more and 40 parts by mass or less.
本発明の導電性粒子は、上記した導電性材料の形態の中でも、特に、導電性接着剤の導電性フィラーとして好適に用いられる。
Among the above-mentioned forms of the conductive material, the conductive particles of the present invention are particularly preferably used as a conductive filler for a conductive adhesive.
前記の導電性接着剤は、導電性基材が形成された2枚の基板間に配置され、加熱加圧によって前記導電性基材を接着して導通する異方導電性接着剤として好ましく用いられる。この異方導電性接着剤は、本発明の導電性粒子と接着剤樹脂とを含む。接着剤樹脂としては、絶縁性で、かつ接着剤樹脂として用いられているものであれば、特に制限なく使用できる。熱可塑性樹脂及び熱硬化性のいずれであってもよく、加熱によって接着性能が発現するものが好ましい。そのような接着剤樹脂には、例えば熱可塑性タイプ、熱硬化性タイプ、紫外線硬化タイプ等がある。また、熱可塑性タイプと熱硬化性タイプとの中間的な性質を示す、いわゆる半熱硬化性タイプ、熱硬化性タイプと紫外線硬化タイプとの複合タイプ等がある。これらの接着剤樹脂は被着対象である回路基板等の表面特性や使用形態に合わせて適宜選択できる。特に、熱硬化性樹脂を含んで構成される接着剤樹脂が、接着後の材料的強度に優れる点から好ましい。
The conductive adhesive is disposed between two substrates on which a conductive substrate is formed, and is preferably used as an anisotropic conductive adhesive that adheres and conducts the conductive substrate by heating and pressurizing. .. This anisotropic conductive adhesive contains the conductive particles of the present invention and an adhesive resin. The adhesive resin can be used without particular limitation as long as it has an insulating property and is used as an adhesive resin. It may be either a thermoplastic resin or a thermosetting resin, and it is preferable that the adhesive performance is exhibited by heating. Such adhesive resins include, for example, a thermoplastic type, a thermosetting type, an ultraviolet curable type and the like. Further, there are a so-called semi-thermosetting type, a composite type of a thermosetting type and an ultraviolet curable type, and the like, which show intermediate properties between a thermoplastic type and a thermosetting type. These adhesive resins can be appropriately selected according to the surface characteristics of the circuit board or the like to be adhered and the usage pattern. In particular, an adhesive resin composed of a thermosetting resin is preferable because it has excellent material strength after bonding.
接着剤樹脂としては、具体的には、エチレン-酢酸ビニル共重合体、カルボキシル変性エチレン-酢酸ビニル共重合体、エチレン-イソブチルアクリレート共重合体、ポリアミド、ポリイミド、ポリエステル、ポリビニルエーテル、ポリビニルブチラール、ポリウレタン、SBSブロック共重合体、カルボキシル変性SBS共重合体、SIS共重合体、SEBS共重合体、マレイン酸変性SEBS共重合体、ポリブタジエンゴム、クロロプレンゴム、カルボキシル変性クロロプレンゴム、スチレン-ブタジエンゴム、イソブチレン-イソプレン共重合体、アクリロニトリル-ブタジエンゴム(以下、NBRと表す。)、カルボキシル変性NBR、アミン変性NBR、エポキシ樹脂、エポキシエステル樹脂、アクリル樹脂、フェノール樹脂又はシリコーン樹脂などから選ばれる1種又は2種以上の組合せにより得られるものを主剤として調製されたものが挙げられる。これらのうち、熱可塑性樹脂としては、スチレン-ブタジエンゴムやSEBSなどがリワーク性に優れるので好ましい。熱硬化性樹脂としては、エポキシ樹脂が好ましい。これらのうち接着力が高く、耐熱性、電気絶縁性に優れ、しかも溶融粘度が低く、低圧力で接続が可能であるという利点から、エポキシ樹脂が最も好ましい。
Specific examples of the adhesive resin include ethylene-vinyl acetate copolymer, carboxyl-modified ethylene-vinyl acetate copolymer, ethylene-isobutyl acrylate copolymer, polyamide, polyimide, polyester, polyvinyl ether, polyvinyl butyral, and polyurethane. , SBS block copolymer, carboxyl-modified SBS copolymer, SIS copolymer, SEBS copolymer, maleic acid-modified SEBS copolymer, polybutadiene rubber, chloroprene rubber, carboxyl-modified chloroprene rubber, styrene-butadiene rubber, isobutylene- One or two selected from isoprene copolymer, acrylonitrile-butadiene rubber (hereinafter referred to as NBR), carboxyl-modified NBR, amine-modified NBR, epoxy resin, epoxy ester resin, acrylic resin, phenol resin, silicone resin and the like. Examples thereof include those prepared by using the one obtained by the above combination as the main agent. Of these, styrene-butadiene rubber, SEBS, and the like are preferable as the thermoplastic resin because they have excellent reworkability. As the thermosetting resin, an epoxy resin is preferable. Of these, epoxy resin is most preferable because it has high adhesive strength, excellent heat resistance and electrical insulation, low melt viscosity, and can be connected at low pressure.
前記のエポキシ樹脂としては、1分子中に2個以上のエポキシ基を有する多価エポキシ樹脂であれば、一般に用いられているエポキシ樹脂が使用可能である。具体的なものとしては、フェノールノボラック、クレゾールノボラック等のノボラック樹脂、ビスフェノールA、ビスフェノールF、ビスフェノールAD、レゾルシン、ビスヒドロキシジフェニルエーテル等の多価フェノール類、エチレングリコール、ネオペンチルグリコール、グリセリン、トリメチロールプロパン、ポリプロピレングリコール等の多価アルコール類、エチレンジアミン、トリエチレンテトラミン、アニリン等のポリアミノ化合物、アジピン酸、フタル酸、イソフタル酸等の多価カルボキシ化合物等とエピクロルヒドリン又は2-メチルエピクロルヒドリンを反応させて得られるグリシジル型のエポキシ樹脂が例示される。また、ジシクロペンタジエンエポキサイド、ブタジエンダイマージエポキサイド等の脂肪族及び脂環族エポキシ樹脂等が挙げられる。これらは1種を単独で又は2種以上混合して使用することができる。
As the epoxy resin, a commonly used epoxy resin can be used as long as it is a polyvalent epoxy resin having two or more epoxy groups in one molecule. Specific examples include novolak resins such as phenol novolac and cresol novolak, polyhydric phenols such as bisphenol A, bisphenol F, bisphenol AD, resorcin, and bishydroxydiphenyl ether, ethylene glycol, neopentyl glycol, glycerin, and trimethylolpropane. , Polyhydric alcohols such as polypropylene glycol, polyamino compounds such as ethylenediamine, triethylenetetramine, and aniline, polyhydric carboxy compounds such as adipic acid, phthalic acid, and isophthalic acid, etc., and epichlorhydrin or 2-methylepicrolhydrin. A glycidyl type epoxy resin is exemplified. Examples thereof include aliphatic and alicyclic epoxy resins such as dicyclopentadiene epoxiside and butadiene dimer epoxiside. These can be used alone or in admixture of two or more.
なお、上述した各種の接着樹脂としては、不純物イオン(NaやCl等)や加水分解性塩素などが低減された高純度品を用いることが、イオンマイグレーションの防止の観点から好ましい。
As the above-mentioned various adhesive resins, it is preferable to use high-purity products in which impurity ions (Na, Cl, etc.) and hydrolyzable chlorine are reduced, from the viewpoint of preventing ion migration.
異方導電性接着剤における導電性粒子の使用量は、接着剤樹脂成分100質量部に対し通常0.1~30質量部、好ましくは0.5~25質量部、より好ましくは1~20質量部である。導電性粒子の使用量がこの範囲内にあることにより、接続抵抗や溶融粘度が高くなることが抑制され、接続信頼性を向上させ、接続の異方性を十分に確保することができる。
The amount of the conductive particles used in the anisotropic conductive adhesive is usually 0.1 to 30 parts by mass, preferably 0.5 to 25 parts by mass, and more preferably 1 to 20 parts by mass with respect to 100 parts by mass of the adhesive resin component. It is a department. When the amount of the conductive particles used is within this range, it is possible to suppress the increase in connection resistance and melt viscosity, improve the connection reliability, and sufficiently secure the anisotropy of the connection.
前記の異方導電性接着剤には、上述した導電性粒子及び接着剤樹脂の他に、当該技術分野において、公知の添加剤を配合することができる。その配合量も当該技術分野において公知の範囲内とすることができる。他の添加剤としては、例えば粘着付与剤、反応性助剤、エポキシ樹脂硬化剤、金属酸化物、光開始剤、増感剤、硬化剤、加硫剤、劣化防止剤、耐熱添加剤、熱伝導向上剤、軟化剤、着色剤、各種カップリング剤又は金属不活性剤などを例示することができる。
In addition to the above-mentioned conductive particles and the adhesive resin, the above-mentioned anisotropic conductive adhesive may contain additives known in the art. The blending amount may also be within the range known in the art. Other additives include, for example, tackifiers, reactive aids, epoxy resin hardeners, metal oxides, photoinitiators, sensitizers, hardeners, vulcanizers, deterioration inhibitors, heat resistant additives, heat. Examples thereof include conduction improvers, softeners, colorants, various coupling agents, and metal deactivators.
粘着付与剤としては、例えばロジン、ロジン誘導体、テルペン樹脂、テルペンフェノール樹脂、石油樹脂、クマロン-インデン樹脂、スチレン系樹脂、イソプレン系樹脂、アルキルフェノール樹脂、キシレン樹脂などが挙げられる。反応性助剤すなわち架橋剤としては、例えばポリオール、イソシアネート類、メラミン樹脂、尿素樹脂、ウトロピン類、アミン類、酸無水物、過酸化物などが挙げられる。エポキシ樹脂硬化剤としては、1分中に2個以上の活性水素を有するものであれば特に制限なく使用できる。具体的なものとしては、例えばジエチレントリアミン、トリエチレンテトラミン、メタフェニレンジアミン、ジシアンジアミド、ポリアミドアミン等のポリアミノ化合物;無水フタル酸、無水メチルナジック酸、ヘキサヒドロ無水フタル酸、無水ピロメリット酸等の有機酸無水物;フェノールノボラック、クレゾールノボラック等のノボラック樹脂等が挙げられる。これらは1種を単独で又は2種以上を混合して使用することができる。また、必要に応じて潜在性硬化剤を用いてもよい。使用できる潜在性硬化剤としては、例えば、イミダゾール系、ヒドラジド系、三フッ化ホウ素-アミン錯体、スルホニウム塩、アミンイミド、ポリアミンの塩、ジシアンジアミド等及びこれらの変性物が挙げられる。これらは1種を単独で又は2種以上の混合体として使用できる。
Examples of the tackifier include rosin, rosin derivative, terpene resin, terpene phenol resin, petroleum resin, kumaron-inden resin, styrene resin, isoprene resin, alkylphenol resin, xylene resin and the like. Examples of the reactive auxiliary agent, that is, the cross-linking agent, include polyols, isocyanates, melamine resins, urea resins, utropines, amines, acid anhydrides, peroxides and the like. The epoxy resin curing agent can be used without particular limitation as long as it has two or more active hydrogens in one minute. Specific examples thereof include polyamino compounds such as diethylenetriamine, triethylenetetramine, metaphenylenediamine, dicyandiamide and polyamideamine; organic acid anhydrides such as phthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride and pyromellitic anhydride. Substances; Novolac resins such as phenol novolac and cresol novolak can be mentioned. These can be used alone or in admixture of two or more. Further, a latent curing agent may be used if necessary. Examples of the latent curing agent that can be used include imidazole-based, hydrazide-based, boron trifluoride-amine complex, sulfonium salt, amineimide, polyamine salt, dicyandiamide and the like, and modified products thereof. These can be used alone or as a mixture of two or more.
前記の異方導電性接着剤は、当該技術分野において通常使用されている製造装置を用いて製造される。例えば、導電性粒子及び接着剤樹脂並びに必要に応じ硬化剤や各種添加剤を配合し、接着剤樹脂が熱硬化性樹脂の場合は有機溶媒中で混合することにより、熱可塑性樹脂の場合は接着剤樹脂の軟化点以上の温度で、具体的には好ましくは約50~130℃程度、更に好ましくは約60~110℃程度で溶融混練することにより製造される。このようにして得られた異方導電性接着剤は、塗布してもよいし、フィルム状にして適用してもよい。
The anisotropic conductive adhesive is manufactured by using a manufacturing apparatus usually used in the technical field. For example, conductive particles, an adhesive resin, and if necessary, a curing agent and various additives are blended, and if the adhesive resin is a thermosetting resin, it is mixed in an organic solvent, and if it is a thermoplastic resin, it is bonded. It is produced by melt-kneading at a temperature equal to or higher than the softening point of the agent resin, specifically preferably at about 50 to 130 ° C, more preferably about 60 to 110 ° C. The anisotropic conductive adhesive thus obtained may be applied or may be applied in the form of a film.
本発明にかかる接続構造体は、本発明にかかる導電性粒子、又は本発明にかかる導電性材料を用いて二つの回路基板同士を接続することにより得られるものである。前記接続構造体の形態としては、例えば、フレキシブルプリント基板とガラス基板との接続構造体、半導体チップとフレキシブルプリント基板との接続構造体、半導体チップとガラス基板との接続構造体等が挙げられる。
The connection structure according to the present invention is obtained by connecting two circuit boards to each other using the conductive particles according to the present invention or the conductive material according to the present invention. Examples of the form of the connection structure include a connection structure between a flexible printed substrate and a glass substrate, a connection structure between a semiconductor chip and a flexible printed substrate, a connection structure between a semiconductor chip and a glass substrate, and the like.
以下、実施例により本発明を更に説明する。しかしながら本発明の範囲はこれらの実施例に限定されるものではない。
Hereinafter, the present invention will be further described with reference to Examples. However, the scope of the present invention is not limited to these examples.
例中の特性は下記の方法により測定した。
(1)導電層表面の元素分析
走査型オージェ電子分光分析装置(アルバック・ファイ株式会社製、PHI710)を用いて、導電性粒子の表面から深さ方向5nm以内の炭素、酸素、リン、ホウ素及びニッケルの原子%を算出した。
(2)導電層表面のイオン分析
飛行時間型二次イオン質量分析装置(ION-TOF社製 TOF-SIMS5型)を用いて、導電粒子を基板上に均一かつ平坦に敷き詰め、その中心付近を200μm四方に対して一次イオン源がBi3+、加速電圧が30kVの条件で、導電性粒子の表面から深さ方向1nm以内で、Niの正イオン(Ni+:質量数57.94)のカウント強度に対するアミン化合物由来の正イオン(CH4N+:質量数30.03)、Niの負イオン(質量数57.94)のカウント強度に対する有機酸由来の負イオン(C2H3O2 -:質量数59.01)、Niの負イオン(Ni-:質量数57.94)のカウント強度に対するリン酸化合物由来の負イオン(PO2 -:質量数62.96)、及びNi-の負イオンのカウント強度に対するホウ酸化合物由来の負イオン(B2O4H3 -:質量数89.02及びB3O6H4 -:質量数133.03)を測定した。
(3)平均粒子径
測定対象の走査型電子顕微鏡(SEM)写真から、任意に200個の粒子を抽出して、倍率10,000倍にて粒子径を測定し、その算術平均値を平均粒子径とした。
(4)導電層の厚み
導電性粒子を2つに切断し、その切り口の断面を走査型電子顕微鏡(SEM)で観察して測定した。 The characteristics in the example were measured by the following method.
(1) Elemental analysis of the surface of the conductive layer Using a scanning Auger electron spectroscopic analyzer (PHI710, manufactured by ULVAC Phi Co., Ltd.), carbon, oxygen, phosphorus, boron and carbon, oxygen, phosphorus, boron and within 5 nm in the depth direction from the surface of the conductive particles The atomic% of nickel was calculated.
(2) Ion analysis of the surface of the conductive layer Using a flight-time type secondary ion mass analyzer (TOF-SIMS5 type manufactured by ION-TOF), conductive particles are spread uniformly and evenly on the substrate, and the vicinity of the center thereof is 200 μm. With respect to the count intensity of positive Ni ions (Ni + : mass number 57.94) within 1 nm in the depth direction from the surface of the conductive particles under the conditions that the primary ion source is Bi 3+ and the acceleration voltage is 30 kV in all directions. Positive ions derived from amine compounds (CH 4 N + : mass number 30.03), negative ions derived from organic acids (C 2 H 3 O 2 − : mass relative to the count intensity of negative ions of Ni (mass number 57.94) the number 59.01), negative ions (Ni of Ni -: negative ions derived from phosphoric acid compound to the count intensity of mass number 57.94) (PO 2 -: mass number 62.96), and Ni - of negative ions Negative ions derived from borate compounds (B 2 O 4 H 3 − : mass number 89.02 and B 3 O 6 H 4 − : mass number 133.03) with respect to the count intensity were measured.
(3) Average particle size 200 particles are arbitrarily extracted from the scanning electron microscope (SEM) photograph to be measured, the particle size is measured at a magnification of 10,000 times, and the arithmetic average value is the average particle. The diameter was set.
(4) Thickness of Conductive Layer The conductive particles were cut into two pieces, and the cross section of the cut end was observed and measured with a scanning electron microscope (SEM).
(1)導電層表面の元素分析
走査型オージェ電子分光分析装置(アルバック・ファイ株式会社製、PHI710)を用いて、導電性粒子の表面から深さ方向5nm以内の炭素、酸素、リン、ホウ素及びニッケルの原子%を算出した。
(2)導電層表面のイオン分析
飛行時間型二次イオン質量分析装置(ION-TOF社製 TOF-SIMS5型)を用いて、導電粒子を基板上に均一かつ平坦に敷き詰め、その中心付近を200μm四方に対して一次イオン源がBi3+、加速電圧が30kVの条件で、導電性粒子の表面から深さ方向1nm以内で、Niの正イオン(Ni+:質量数57.94)のカウント強度に対するアミン化合物由来の正イオン(CH4N+:質量数30.03)、Niの負イオン(質量数57.94)のカウント強度に対する有機酸由来の負イオン(C2H3O2 -:質量数59.01)、Niの負イオン(Ni-:質量数57.94)のカウント強度に対するリン酸化合物由来の負イオン(PO2 -:質量数62.96)、及びNi-の負イオンのカウント強度に対するホウ酸化合物由来の負イオン(B2O4H3 -:質量数89.02及びB3O6H4 -:質量数133.03)を測定した。
(3)平均粒子径
測定対象の走査型電子顕微鏡(SEM)写真から、任意に200個の粒子を抽出して、倍率10,000倍にて粒子径を測定し、その算術平均値を平均粒子径とした。
(4)導電層の厚み
導電性粒子を2つに切断し、その切り口の断面を走査型電子顕微鏡(SEM)で観察して測定した。 The characteristics in the example were measured by the following method.
(1) Elemental analysis of the surface of the conductive layer Using a scanning Auger electron spectroscopic analyzer (PHI710, manufactured by ULVAC Phi Co., Ltd.), carbon, oxygen, phosphorus, boron and carbon, oxygen, phosphorus, boron and within 5 nm in the depth direction from the surface of the conductive particles The atomic% of nickel was calculated.
(2) Ion analysis of the surface of the conductive layer Using a flight-time type secondary ion mass analyzer (TOF-SIMS5 type manufactured by ION-TOF), conductive particles are spread uniformly and evenly on the substrate, and the vicinity of the center thereof is 200 μm. With respect to the count intensity of positive Ni ions (Ni + : mass number 57.94) within 1 nm in the depth direction from the surface of the conductive particles under the conditions that the primary ion source is Bi 3+ and the acceleration voltage is 30 kV in all directions. Positive ions derived from amine compounds (CH 4 N + : mass number 30.03), negative ions derived from organic acids (C 2 H 3 O 2 − : mass relative to the count intensity of negative ions of Ni (mass number 57.94) the number 59.01), negative ions (Ni of Ni -: negative ions derived from phosphoric acid compound to the count intensity of mass number 57.94) (PO 2 -: mass number 62.96), and Ni - of negative ions Negative ions derived from borate compounds (B 2 O 4 H 3 − : mass number 89.02 and B 3 O 6 H 4 − : mass number 133.03) with respect to the count intensity were measured.
(3) Average particle size 200 particles are arbitrarily extracted from the scanning electron microscope (SEM) photograph to be measured, the particle size is measured at a magnification of 10,000 times, and the arithmetic average value is the average particle. The diameter was set.
(4) Thickness of Conductive Layer The conductive particles were cut into two pieces, and the cross section of the cut end was observed and measured with a scanning electron microscope (SEM).
〔実施例1〕
(1)前処理
平均粒子径3.0μmの球状スチレン-アクリレート-シリカ複合系樹脂粒子を芯材粒子として用いた。その9gを、200mLのコンディショナー水溶液(ローム・アンド・ハース電子材料製の「クリーナーコンディショナー231」)に攪拌しながら投入した。コンディショナー水溶液の濃度は40mL/Lであった。引き続き、液温60℃で超音波を与えながら30分間攪拌して芯材粒子の表面改質及び分散処理を行った。この水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにした。このスラリーへ塩化第一錫0.1gを投入した。常温で5分間攪拌し、錫イオンを芯材粒子の表面に吸着させる感受性化処理を行った。引き続きこの水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにして60℃に維持した。このスラリーへ0.11mol/Lの塩化パラジウム水溶液1.5mLを投入した。60℃で5分間撹拌し、パラジウムイオンを芯材粒子の表面に捕捉させる活性化処理を行った。引き続きこの水溶液を濾過し、一回リパルプ湯洗した芯材粒子を100mLのスラリーにし、0.5g/Lジメチルアミンボラン水溶液10mLを加え、超音波を与えながら2分間撹拌して前処理済み芯材粒子のスラリーを得た。
(2)めっき浴の調製
5g/Lの酒石酸ナトリウム、2g/Lの硫酸ニッケル六水和物、10g/Lのクエン酸3ナトリウム、0.1g/Lの次亜リン酸ナトリウム、及び2g/Lのポリエチレングリコールを溶解した水溶液からなる無電解ニッケル-リンめっき浴3Lを調製し、70℃に昇温した。
(3)無電解めっき処理
この無電解めっき浴に、前記前処理済み芯材粒子のスラリーを投入し、5分間攪拌して水素の発泡が停止するのを確認した。
このスラリーに、224g/Lの硫酸ニッケル水溶液420mLと、210g/Lの次亜リン酸ナトリウム及び80g/Lの水酸化ナトリウムを含む混合水溶液420mLを、添加速度はいずれも2.5mL/分として定量ポンプによって連続的に分別添加し、無電解めっきを開始した。
硫酸ニッケル水溶液と、次亜リン酸ナトリウム及び水酸化ナトリウムの混合水溶液のそれぞれ全量を添加した後、70℃の温度を保持しながら5分間攪拌を継続した。次いで液を濾過し、濾過物を3回洗浄した後、110℃の真空乾燥機で乾燥して、ニッケル-リン合金皮膜を有する導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。
(4)真空加熱処理
得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを真空加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、10Paの真空下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Example 1]
(1) Pretreatment Spherical styrene-acrylate-silica composite resin particles having an average particle diameter of 3.0 μm were used as core particles. 9 g of the solution was added to a 200 mL aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Roam & Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L. Subsequently, the surface of the core material particles was modified and dispersed by stirring for 30 minutes while applying ultrasonic waves at a liquid temperature of 60 ° C. This aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry. 0.1 g of stannous chloride was added to this slurry. After stirring at room temperature for 5 minutes, a sensitization treatment was performed in which tin ions were adsorbed on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry and maintained at 60 ° C. 1.5 mL of a 0.11 mol / L palladium chloride aqueous solution was added to this slurry. The mixture was stirred at 60 ° C. for 5 minutes to perform an activation treatment in which palladium ions were captured on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with hot water were made into a 100 mL slurry, 10 mL of 0.5 g / L dimethylamine borane aqueous solution was added, and the mixture was stirred for 2 minutes while applying ultrasonic waves to pretreated the core material. A slurry of particles was obtained.
(2) Preparation of plating bath 5 g / L sodium tartrate, 2 g / L nickel sulfate hexahydrate, 10 g / L trisodium citrate, 0.1 g / L sodium hypophosphite, and 2 g / L A non-electrolytic nickel-phosphorus plating bath 3L consisting of an aqueous solution in which polyethylene glycol was dissolved was prepared and heated to 70 ° C.
(3) Electroless plating treatment It was confirmed that the slurry of the pretreated core material particles was put into this electroless plating bath and stirred for 5 minutes to stop the foaming of hydrogen.
To this slurry, 420 mL of a 224 g / L nickel sulfate aqueous solution and 420 mL of a mixed aqueous solution containing 210 g / L of sodium hypophosphite and 80 g / L of sodium hydroxide were quantified at an addition rate of 2.5 mL / min. Separation and addition were continuously performed by a pump, and electroless plating was started.
After adding the entire amount of each of the aqueous solution of nickel sulfate and the mixed aqueous solution of sodium hypophosphite and sodium hydroxide, stirring was continued for 5 minutes while maintaining the temperature of 70 ° C. Then, the liquid was filtered, the filtrate was washed three times, and then dried in a vacuum dryer at 110 ° C. to obtain conductive particles having a nickel-phosphorus alloy film. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
(4) Vacuum heat treatment The obtained conductive particles were placed in a square container so as to have a thickness of 5 mm. This was placed in a vacuum heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
(1)前処理
平均粒子径3.0μmの球状スチレン-アクリレート-シリカ複合系樹脂粒子を芯材粒子として用いた。その9gを、200mLのコンディショナー水溶液(ローム・アンド・ハース電子材料製の「クリーナーコンディショナー231」)に攪拌しながら投入した。コンディショナー水溶液の濃度は40mL/Lであった。引き続き、液温60℃で超音波を与えながら30分間攪拌して芯材粒子の表面改質及び分散処理を行った。この水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにした。このスラリーへ塩化第一錫0.1gを投入した。常温で5分間攪拌し、錫イオンを芯材粒子の表面に吸着させる感受性化処理を行った。引き続きこの水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにして60℃に維持した。このスラリーへ0.11mol/Lの塩化パラジウム水溶液1.5mLを投入した。60℃で5分間撹拌し、パラジウムイオンを芯材粒子の表面に捕捉させる活性化処理を行った。引き続きこの水溶液を濾過し、一回リパルプ湯洗した芯材粒子を100mLのスラリーにし、0.5g/Lジメチルアミンボラン水溶液10mLを加え、超音波を与えながら2分間撹拌して前処理済み芯材粒子のスラリーを得た。
(2)めっき浴の調製
5g/Lの酒石酸ナトリウム、2g/Lの硫酸ニッケル六水和物、10g/Lのクエン酸3ナトリウム、0.1g/Lの次亜リン酸ナトリウム、及び2g/Lのポリエチレングリコールを溶解した水溶液からなる無電解ニッケル-リンめっき浴3Lを調製し、70℃に昇温した。
(3)無電解めっき処理
この無電解めっき浴に、前記前処理済み芯材粒子のスラリーを投入し、5分間攪拌して水素の発泡が停止するのを確認した。
このスラリーに、224g/Lの硫酸ニッケル水溶液420mLと、210g/Lの次亜リン酸ナトリウム及び80g/Lの水酸化ナトリウムを含む混合水溶液420mLを、添加速度はいずれも2.5mL/分として定量ポンプによって連続的に分別添加し、無電解めっきを開始した。
硫酸ニッケル水溶液と、次亜リン酸ナトリウム及び水酸化ナトリウムの混合水溶液のそれぞれ全量を添加した後、70℃の温度を保持しながら5分間攪拌を継続した。次いで液を濾過し、濾過物を3回洗浄した後、110℃の真空乾燥機で乾燥して、ニッケル-リン合金皮膜を有する導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。
(4)真空加熱処理
得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを真空加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、10Paの真空下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Example 1]
(1) Pretreatment Spherical styrene-acrylate-silica composite resin particles having an average particle diameter of 3.0 μm were used as core particles. 9 g of the solution was added to a 200 mL aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Roam & Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L. Subsequently, the surface of the core material particles was modified and dispersed by stirring for 30 minutes while applying ultrasonic waves at a liquid temperature of 60 ° C. This aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry. 0.1 g of stannous chloride was added to this slurry. After stirring at room temperature for 5 minutes, a sensitization treatment was performed in which tin ions were adsorbed on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry and maintained at 60 ° C. 1.5 mL of a 0.11 mol / L palladium chloride aqueous solution was added to this slurry. The mixture was stirred at 60 ° C. for 5 minutes to perform an activation treatment in which palladium ions were captured on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with hot water were made into a 100 mL slurry, 10 mL of 0.5 g / L dimethylamine borane aqueous solution was added, and the mixture was stirred for 2 minutes while applying ultrasonic waves to pretreated the core material. A slurry of particles was obtained.
(2) Preparation of plating bath 5 g / L sodium tartrate, 2 g / L nickel sulfate hexahydrate, 10 g / L trisodium citrate, 0.1 g / L sodium hypophosphite, and 2 g / L A non-electrolytic nickel-phosphorus plating bath 3L consisting of an aqueous solution in which polyethylene glycol was dissolved was prepared and heated to 70 ° C.
(3) Electroless plating treatment It was confirmed that the slurry of the pretreated core material particles was put into this electroless plating bath and stirred for 5 minutes to stop the foaming of hydrogen.
To this slurry, 420 mL of a 224 g / L nickel sulfate aqueous solution and 420 mL of a mixed aqueous solution containing 210 g / L of sodium hypophosphite and 80 g / L of sodium hydroxide were quantified at an addition rate of 2.5 mL / min. Separation and addition were continuously performed by a pump, and electroless plating was started.
After adding the entire amount of each of the aqueous solution of nickel sulfate and the mixed aqueous solution of sodium hypophosphite and sodium hydroxide, stirring was continued for 5 minutes while maintaining the temperature of 70 ° C. Then, the liquid was filtered, the filtrate was washed three times, and then dried in a vacuum dryer at 110 ° C. to obtain conductive particles having a nickel-phosphorus alloy film. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
(4) Vacuum heat treatment The obtained conductive particles were placed in a square container so as to have a thickness of 5 mm. This was placed in a vacuum heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
〔実施例2〕
実施例1における(4)真空加熱処理を次の操作により行った。実施例1の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、100Paの真空下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Example 2]
The vacuum heat treatment (4) in Example 1 was carried out by the following operation. The conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 100 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
実施例1における(4)真空加熱処理を次の操作により行った。実施例1の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、100Paの真空下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Example 2]
The vacuum heat treatment (4) in Example 1 was carried out by the following operation. The conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 100 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
〔実施例3〕
実施例1における(4)真空加熱処理を次の操作により行った。実施例1の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、10Paの真空下、320℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Example 3]
The vacuum heat treatment (4) in Example 1 was carried out by the following operation. The conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 320 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
実施例1における(4)真空加熱処理を次の操作により行った。実施例1の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、10Paの真空下、320℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Example 3]
The vacuum heat treatment (4) in Example 1 was carried out by the following operation. The conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 320 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
〔比較例1〕
実施例1の(3)無電解めっき処理で得られた導電性粒子を比較例1の導電性粒子とした。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Comparative Example 1]
The conductive particles obtained by the (3) electroless plating treatment of Example 1 were used as the conductive particles of Comparative Example 1. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
実施例1の(3)無電解めっき処理で得られた導電性粒子を比較例1の導電性粒子とした。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Comparative Example 1]
The conductive particles obtained by the (3) electroless plating treatment of Example 1 were used as the conductive particles of Comparative Example 1. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
〔比較例2〕
実施例1における(4)真空加熱処理に代えて次の操作を行った。実施例1の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、窒素雰囲気の常圧下、260℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Comparative Example 2]
The following operation was performed instead of (4) vacuum heat treatment in Example 1. The conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 260 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
実施例1における(4)真空加熱処理に代えて次の操作を行った。実施例1の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、窒素雰囲気の常圧下、260℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Comparative Example 2]
The following operation was performed instead of (4) vacuum heat treatment in Example 1. The conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 260 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
〔比較例3〕
実施例1における(4)真空加熱処理に代えて次の操作を行った。実施例1の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、窒素雰囲気の常圧下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Comparative Example 3]
The following operation was performed instead of (4) vacuum heat treatment in Example 1. The conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
実施例1における(4)真空加熱処理に代えて次の操作を行った。実施例1の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、窒素雰囲気の常圧下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Comparative Example 3]
The following operation was performed instead of (4) vacuum heat treatment in Example 1. The conductive particles obtained by the (3) electroless plating treatment of Example 1 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
〔実施例4〕
(1)前処理
平均粒子径3.0μmの球状スチレン-アクリレート-シリカ複合系樹脂粒子を芯材粒子として用いた。その9gを、200mLのコンディショナー水溶液(ローム・アンド・ハース電子材料製の「クリーナーコンディショナー231」)に攪拌しながら投入した。コンディショナー水溶液の濃度は40mL/Lであった。引き続き、液温60℃で超音波を与えながら30分間攪拌して芯材粒子の表面改質及び分散処理を行った。この水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにした。このスラリーへ塩化第一錫0.1gを投入した。常温で5分間攪拌し、錫イオンを芯材粒子の表面に吸着させる感受性化処理を行った。引き続きこの水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにして60℃に維持した。このスラリーへ0.11mol/Lの塩化パラジウム水溶液1.5mLを投入した。60℃で5分間撹拌し、パラジウムイオンを芯材粒子の表面に捕捉させる活性化処理を行った。引き続きこの水溶液を濾過し、一回リパルプ湯洗した芯材粒子を100mLのスラリーにし、0.5g/Lジメチルアミンボラン水溶液10mLを加え、超音波を与えながら2分間撹拌して前処理済み芯材粒子のスラリーを得た。
(2)めっき浴の調製
5g/Lの酒石酸ナトリウム、2g/Lの硫酸ニッケル六水和物、10g/Lのクエン酸3ナトリウム、0.1g/Lのジメチルアミンボラン、及び2g/Lのポリエチレングリコールを溶解した水溶液からなる無電解ニッケル-ホウ素めっき浴3Lを調製し、70℃に昇温した。
(3)無電解めっき処理
この無電解めっき浴に、前記前処理済み芯材粒子のスラリーを投入し、5分間攪拌して水素の発泡が停止するのを確認した。
このスラリーに、224g/Lの硫酸ニッケル水溶液420mLと、120g/Lのジメチルアミンボラン及び80g/Lの水酸化ナトリウムを含む混合水溶液420mLを、添加速度はいずれも2.5mL/分として定量ポンプによって連続的に分別添加し、無電解めっきを開始した。
硫酸ニッケル水溶液と、ジメチルアミンボラン及び水酸化ナトリウムの混合水溶液のそれぞれ全量を添加した後、70℃の温度を保持しながら5分間攪拌を継続した。次いで液を濾過し、濾過物を3回洗浄した後、110℃の真空乾燥機で乾燥して、ニッケル-ホウ素合金皮膜を有する導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。
(4)真空加熱処理
得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを真空加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、10Paの真空下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Example 4]
(1) Pretreatment Spherical styrene-acrylate-silica composite resin particles having an average particle diameter of 3.0 μm were used as core particles. 9 g of the solution was added to a 200 mL aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Roam & Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L. Subsequently, the surface of the core material particles was modified and dispersed by stirring for 30 minutes while applying ultrasonic waves at a liquid temperature of 60 ° C. This aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry. 0.1 g of stannous chloride was added to this slurry. After stirring at room temperature for 5 minutes, a sensitization treatment was performed in which tin ions were adsorbed on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry and maintained at 60 ° C. 1.5 mL of a 0.11 mol / L palladium chloride aqueous solution was added to this slurry. The mixture was stirred at 60 ° C. for 5 minutes to perform an activation treatment in which palladium ions were captured on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with hot water were made into a 100 mL slurry, 10 mL of 0.5 g / L dimethylamine borane aqueous solution was added, and the mixture was stirred for 2 minutes while applying ultrasonic waves to pretreated the core material. A slurry of particles was obtained.
(2) Preparation of plating bath 5 g / L sodium tartrate, 2 g / L nickel sulfate hexahydrate, 10 g / L 3 sodium citrate, 0.1 g / L dimethylamine borane, and 2 g / L polyethylene A 3L electroless nickel-boron plating bath consisting of an aqueous solution in which glycol was dissolved was prepared and heated to 70 ° C.
(3) Electroless plating treatment It was confirmed that the slurry of the pretreated core material particles was put into this electroless plating bath and stirred for 5 minutes to stop the foaming of hydrogen.
To this slurry, 420 mL of a 224 g / L nickel sulfate aqueous solution and 420 mL of a mixed aqueous solution containing 120 g / L of dimethylamine borane and 80 g / L of sodium hydroxide were added at a rate of 2.5 mL / min by a metering pump. Electroless plating was started by continuously separating and adding.
After adding the entire amount of each of the aqueous solution of nickel sulfate and the mixed aqueous solution of dimethylamine borane and sodium hydroxide, stirring was continued for 5 minutes while maintaining the temperature of 70 ° C. Then, the liquid was filtered, the filtrate was washed three times, and then dried in a vacuum dryer at 110 ° C. to obtain conductive particles having a nickel-boron alloy film. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
(4) Vacuum heat treatment The obtained conductive particles were placed in a square container so as to have a thickness of 5 mm. This was placed in a vacuum heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
(1)前処理
平均粒子径3.0μmの球状スチレン-アクリレート-シリカ複合系樹脂粒子を芯材粒子として用いた。その9gを、200mLのコンディショナー水溶液(ローム・アンド・ハース電子材料製の「クリーナーコンディショナー231」)に攪拌しながら投入した。コンディショナー水溶液の濃度は40mL/Lであった。引き続き、液温60℃で超音波を与えながら30分間攪拌して芯材粒子の表面改質及び分散処理を行った。この水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにした。このスラリーへ塩化第一錫0.1gを投入した。常温で5分間攪拌し、錫イオンを芯材粒子の表面に吸着させる感受性化処理を行った。引き続きこの水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにして60℃に維持した。このスラリーへ0.11mol/Lの塩化パラジウム水溶液1.5mLを投入した。60℃で5分間撹拌し、パラジウムイオンを芯材粒子の表面に捕捉させる活性化処理を行った。引き続きこの水溶液を濾過し、一回リパルプ湯洗した芯材粒子を100mLのスラリーにし、0.5g/Lジメチルアミンボラン水溶液10mLを加え、超音波を与えながら2分間撹拌して前処理済み芯材粒子のスラリーを得た。
(2)めっき浴の調製
5g/Lの酒石酸ナトリウム、2g/Lの硫酸ニッケル六水和物、10g/Lのクエン酸3ナトリウム、0.1g/Lのジメチルアミンボラン、及び2g/Lのポリエチレングリコールを溶解した水溶液からなる無電解ニッケル-ホウ素めっき浴3Lを調製し、70℃に昇温した。
(3)無電解めっき処理
この無電解めっき浴に、前記前処理済み芯材粒子のスラリーを投入し、5分間攪拌して水素の発泡が停止するのを確認した。
このスラリーに、224g/Lの硫酸ニッケル水溶液420mLと、120g/Lのジメチルアミンボラン及び80g/Lの水酸化ナトリウムを含む混合水溶液420mLを、添加速度はいずれも2.5mL/分として定量ポンプによって連続的に分別添加し、無電解めっきを開始した。
硫酸ニッケル水溶液と、ジメチルアミンボラン及び水酸化ナトリウムの混合水溶液のそれぞれ全量を添加した後、70℃の温度を保持しながら5分間攪拌を継続した。次いで液を濾過し、濾過物を3回洗浄した後、110℃の真空乾燥機で乾燥して、ニッケル-ホウ素合金皮膜を有する導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。
(4)真空加熱処理
得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを真空加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、10Paの真空下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表1に、イオン分析結果を表2に示す。 [Example 4]
(1) Pretreatment Spherical styrene-acrylate-silica composite resin particles having an average particle diameter of 3.0 μm were used as core particles. 9 g of the solution was added to a 200 mL aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Roam & Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L. Subsequently, the surface of the core material particles was modified and dispersed by stirring for 30 minutes while applying ultrasonic waves at a liquid temperature of 60 ° C. This aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry. 0.1 g of stannous chloride was added to this slurry. After stirring at room temperature for 5 minutes, a sensitization treatment was performed in which tin ions were adsorbed on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with ripulp water were made into a 200 mL slurry and maintained at 60 ° C. 1.5 mL of a 0.11 mol / L palladium chloride aqueous solution was added to this slurry. The mixture was stirred at 60 ° C. for 5 minutes to perform an activation treatment in which palladium ions were captured on the surface of the core material particles. Subsequently, this aqueous solution was filtered, and the core material particles washed once with hot water were made into a 100 mL slurry, 10 mL of 0.5 g / L dimethylamine borane aqueous solution was added, and the mixture was stirred for 2 minutes while applying ultrasonic waves to pretreated the core material. A slurry of particles was obtained.
(2) Preparation of plating bath 5 g / L sodium tartrate, 2 g / L nickel sulfate hexahydrate, 10 g / L 3 sodium citrate, 0.1 g / L dimethylamine borane, and 2 g / L polyethylene A 3L electroless nickel-boron plating bath consisting of an aqueous solution in which glycol was dissolved was prepared and heated to 70 ° C.
(3) Electroless plating treatment It was confirmed that the slurry of the pretreated core material particles was put into this electroless plating bath and stirred for 5 minutes to stop the foaming of hydrogen.
To this slurry, 420 mL of a 224 g / L nickel sulfate aqueous solution and 420 mL of a mixed aqueous solution containing 120 g / L of dimethylamine borane and 80 g / L of sodium hydroxide were added at a rate of 2.5 mL / min by a metering pump. Electroless plating was started by continuously separating and adding.
After adding the entire amount of each of the aqueous solution of nickel sulfate and the mixed aqueous solution of dimethylamine borane and sodium hydroxide, stirring was continued for 5 minutes while maintaining the temperature of 70 ° C. Then, the liquid was filtered, the filtrate was washed three times, and then dried in a vacuum dryer at 110 ° C. to obtain conductive particles having a nickel-boron alloy film. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions.
(4) Vacuum heat treatment The obtained conductive particles were placed in a square container so as to have a thickness of 5 mm. This was placed in a vacuum heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 1, and the ion analysis results are shown in Table 2.
〔実施例5〕
実施例4における(4)真空加熱処理を次の操作により行った。実施例4の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、100Paの真空下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Example 5]
The vacuum heat treatment (4) in Example 4 was carried out by the following operation. The conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 100 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
実施例4における(4)真空加熱処理を次の操作により行った。実施例4の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、100Paの真空下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Example 5]
The vacuum heat treatment (4) in Example 4 was carried out by the following operation. The conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under a vacuum of 100 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
〔実施例6〕
実施例4における(4)真空加熱処理を次の操作により行った。実施例4の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、10Paの真空下、320℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Example 6]
The vacuum heat treatment (4) in Example 4 was carried out by the following operation. The conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 320 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
実施例4における(4)真空加熱処理を次の操作により行った。実施例4の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、10Paの真空下、320℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Example 6]
The vacuum heat treatment (4) in Example 4 was carried out by the following operation. The conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 320 ° C. for 2 hours under a vacuum of 10 Pa. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
〔比較例4〕
実施例4の(3)無電解めっき処理で得られた導電性粒子を比較例4の導電性粒子とした。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Comparative Example 4]
The conductive particles obtained by the (3) electroless plating treatment of Example 4 were used as the conductive particles of Comparative Example 4. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
実施例4の(3)無電解めっき処理で得られた導電性粒子を比較例4の導電性粒子とした。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Comparative Example 4]
The conductive particles obtained by the (3) electroless plating treatment of Example 4 were used as the conductive particles of Comparative Example 4. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
〔比較例5〕
実施例4における(4)真空加熱処理に代えて次の操作を行った。実施例4の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、窒素雰囲気の常圧下、260℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Comparative Example 5]
The following operation was performed instead of (4) vacuum heat treatment in Example 4. The conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 260 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
実施例4における(4)真空加熱処理に代えて次の操作を行った。実施例4の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、窒素雰囲気の常圧下、260℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Comparative Example 5]
The following operation was performed instead of (4) vacuum heat treatment in Example 4. The conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 260 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
〔比較例6〕
実施例4における(4)真空加熱処理に代えて次の操作を行った。実施例4の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、窒素雰囲気の常圧下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Comparative Example 6]
The following operation was performed instead of (4) vacuum heat treatment in Example 4. The conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
実施例4における(4)真空加熱処理に代えて次の操作を行った。実施例4の(3)無電解めっき処理により得られた導電性粒子を、5mmの厚さとなるように角型状の容器内に入れた。これを加熱炉(デンケン・ハイデンタル社製、KDF-75)に入れ、窒素雰囲気の常圧下、390℃で2時間の加熱処理を行った。加熱処理後、室温まで放冷して加熱処理済みの導電性粒子を得た。得られた導電性粒子の平均粒子径は3.22μm、導電層の厚みは110nmであり突起を有していた。導電層表面の元素分析結果を表3に、イオン分析結果を表4に示す。 [Comparative Example 6]
The following operation was performed instead of (4) vacuum heat treatment in Example 4. The conductive particles obtained by the (3) electroless plating treatment of Example 4 were placed in a square container so as to have a thickness of 5 mm. This was placed in a heating furnace (KDF-75, manufactured by Denken Hydental Co., Ltd.) and heat-treated at 390 ° C. for 2 hours under normal pressure in a nitrogen atmosphere. After the heat treatment, the particles were allowed to cool to room temperature to obtain heat-treated conductive particles. The average particle size of the obtained conductive particles was 3.22 μm, the thickness of the conductive layer was 110 nm, and the conductive particles had protrusions. The elemental analysis results on the surface of the conductive layer are shown in Table 3, and the ion analysis results are shown in Table 4.
〔保存安定性及び耐腐食性の評価〕
(1)導電性粒子の保存安定性及び耐腐食性
実施例及び比較例の導電性粒子を用いて、導電性粒子の保存安定性及び耐腐食性の評価を以下の方法で行った。
実施例及び比較例で得られた導電性粒子を、室温下(25℃・50%RH)、表2に示す時間保存した後、垂直に立てた内径10mmの樹脂製円筒内に、該導電性粒子1.0gを入れ、室温下(25℃・50%RH)、2kNの荷重をかけた状態で上下電極間の体積抵抗値を求めた。結果を表5に示す。 [Evaluation of storage stability and corrosion resistance]
(1) Storage stability and corrosion resistance of conductive particles Using the conductive particles of Examples and Comparative Examples, the storage stability and corrosion resistance of the conductive particles were evaluated by the following methods.
The conductive particles obtained in Examples and Comparative Examples were stored at room temperature (25 ° C., 50% RH) for the time shown in Table 2, and then the conductive particles were placed in a vertically standing resin cylinder having an inner diameter of 10 mm. The volume resistance value between the upper and lower electrodes was determined by adding 1.0 g of particles and applying a load of 2 kN at room temperature (25 ° C., 50% RH). The results are shown in Table 5.
(1)導電性粒子の保存安定性及び耐腐食性
実施例及び比較例の導電性粒子を用いて、導電性粒子の保存安定性及び耐腐食性の評価を以下の方法で行った。
実施例及び比較例で得られた導電性粒子を、室温下(25℃・50%RH)、表2に示す時間保存した後、垂直に立てた内径10mmの樹脂製円筒内に、該導電性粒子1.0gを入れ、室温下(25℃・50%RH)、2kNの荷重をかけた状態で上下電極間の体積抵抗値を求めた。結果を表5に示す。 [Evaluation of storage stability and corrosion resistance]
(1) Storage stability and corrosion resistance of conductive particles Using the conductive particles of Examples and Comparative Examples, the storage stability and corrosion resistance of the conductive particles were evaluated by the following methods.
The conductive particles obtained in Examples and Comparative Examples were stored at room temperature (25 ° C., 50% RH) for the time shown in Table 2, and then the conductive particles were placed in a vertically standing resin cylinder having an inner diameter of 10 mm. The volume resistance value between the upper and lower electrodes was determined by adding 1.0 g of particles and applying a load of 2 kN at room temperature (25 ° C., 50% RH). The results are shown in Table 5.
この結果から、実施例で得られた導電性粒子は、比較例で得られた導電性粒子に比べて体積抵抗値の増加が少なく、保存安定性及び耐腐食性に優れていることが判る。
From this result, it can be seen that the conductive particles obtained in the examples have a smaller increase in volume resistance value than the conductive particles obtained in the comparative example, and are excellent in storage stability and corrosion resistance.
(2)導電性材料の保存安定性
実施例及び比較例の導電性粒子を用いて、下記の方法で導電性材料を作製し、プレッシャークッカーテストにより導電性材料の保存安定性を評価した。
エポキシ樹脂100質量部、硬化剤150質量部及びトルエン70質量部を混合した絶縁性接着剤と、実施例及び比較例で得られた導電性粒子15質量部とを混合してペーストを得た。このペーストをシリコーン処理ポリエステルフィルム上にバーコーターを用いて塗布し、その後、ペーストを乾燥させて、フィルム上に薄膜を形成した。得られた薄膜形成フィルムを、全面がアルミニウムを蒸着させたガラス基板と、銅パターンが50μmピッチに形成されたポリイミドフィルム基板との間に配して、接続構造体を作製して電気接続を行い、この接続構造体の接続抵抗値を室温下(25℃・50%RH)で測定した。その後、前記接続構造体を密閉容器に並べ、温度121℃、相対湿度100%、2気圧の環境下で10時間処理するプレッシャークッカーテストを行った。プレッシャークッカーテスト後、接続構造体ルの接続抵抗値を室温下(25℃・50%RH)で測定した。プレッシャークッカーテスト前後の接続抵抗値の差が小さいほど導電性材料の保存安定性が高いものであると評価できる。結果を表6に示す。 (2) Storage stability of the conductive material Using the conductive particles of Examples and Comparative Examples, a conductive material was prepared by the following method, and the storage stability of the conductive material was evaluated by a pressure cooker test.
An insulating adhesive obtained by mixing 100 parts by mass of an epoxy resin, 150 parts by mass of a curing agent and 70 parts by mass of toluene was mixed with 15 parts by mass of the conductive particles obtained in Examples and Comparative Examples to obtain a paste. This paste was applied onto a silicone treated polyester film using a bar coater and then dried to form a thin film on the film. The obtained thin film-forming film is placed between a glass substrate on which aluminum is vapor-deposited on the entire surface and a polyimide film substrate on which copper patterns are formed at a pitch of 50 μm to prepare a connection structure and perform electrical connection. , The connection resistance value of this connection structure was measured at room temperature (25 ° C., 50% RH). Then, the connection structure was arranged in a closed container, and a pressure cooker test was conducted in which the connection structure was treated in an environment of a temperature of 121 ° C., a relative humidity of 100%, and 2 atm for 10 hours. After the pressure cooker test, the connection resistance value of the connection structure was measured at room temperature (25 ° C., 50% RH). It can be evaluated that the smaller the difference between the connection resistance values before and after the pressure cooker test, the higher the storage stability of the conductive material. The results are shown in Table 6.
実施例及び比較例の導電性粒子を用いて、下記の方法で導電性材料を作製し、プレッシャークッカーテストにより導電性材料の保存安定性を評価した。
エポキシ樹脂100質量部、硬化剤150質量部及びトルエン70質量部を混合した絶縁性接着剤と、実施例及び比較例で得られた導電性粒子15質量部とを混合してペーストを得た。このペーストをシリコーン処理ポリエステルフィルム上にバーコーターを用いて塗布し、その後、ペーストを乾燥させて、フィルム上に薄膜を形成した。得られた薄膜形成フィルムを、全面がアルミニウムを蒸着させたガラス基板と、銅パターンが50μmピッチに形成されたポリイミドフィルム基板との間に配して、接続構造体を作製して電気接続を行い、この接続構造体の接続抵抗値を室温下(25℃・50%RH)で測定した。その後、前記接続構造体を密閉容器に並べ、温度121℃、相対湿度100%、2気圧の環境下で10時間処理するプレッシャークッカーテストを行った。プレッシャークッカーテスト後、接続構造体ルの接続抵抗値を室温下(25℃・50%RH)で測定した。プレッシャークッカーテスト前後の接続抵抗値の差が小さいほど導電性材料の保存安定性が高いものであると評価できる。結果を表6に示す。 (2) Storage stability of the conductive material Using the conductive particles of Examples and Comparative Examples, a conductive material was prepared by the following method, and the storage stability of the conductive material was evaluated by a pressure cooker test.
An insulating adhesive obtained by mixing 100 parts by mass of an epoxy resin, 150 parts by mass of a curing agent and 70 parts by mass of toluene was mixed with 15 parts by mass of the conductive particles obtained in Examples and Comparative Examples to obtain a paste. This paste was applied onto a silicone treated polyester film using a bar coater and then dried to form a thin film on the film. The obtained thin film-forming film is placed between a glass substrate on which aluminum is vapor-deposited on the entire surface and a polyimide film substrate on which copper patterns are formed at a pitch of 50 μm to prepare a connection structure and perform electrical connection. , The connection resistance value of this connection structure was measured at room temperature (25 ° C., 50% RH). Then, the connection structure was arranged in a closed container, and a pressure cooker test was conducted in which the connection structure was treated in an environment of a temperature of 121 ° C., a relative humidity of 100%, and 2 atm for 10 hours. After the pressure cooker test, the connection resistance value of the connection structure was measured at room temperature (25 ° C., 50% RH). It can be evaluated that the smaller the difference between the connection resistance values before and after the pressure cooker test, the higher the storage stability of the conductive material. The results are shown in Table 6.
この結果から、実施例で得られた導電性材料は、比較例で得られた導電性材料に比べてプレッシャークッカーテスト前後の接続抵抗値の差が小さく、保存安定性に優れていることが判る。
From this result, it can be seen that the conductive material obtained in the example has a smaller difference in connection resistance value before and after the pressure cooker test than the conductive material obtained in the comparative example, and is excellent in storage stability. ..
〔接続抵抗及び接続信頼性の評価〕
実施例及び比較例の導電性粒子を用いて、接続抵抗及び接続信頼性の評価を以下の方法で行った。
垂直に立てた内径10mmの樹脂製円筒内に、実施例及び比較例で得られた導電性粒子1.0gを入れ、室温下(25℃・50%RH)、2kNの荷重をかけた状態で上下電極間の電気抵抗を測定し、初期体積抵抗値を求めた。初期体積抵抗値が低いほど、電極に形成されている酸化膜を効果的に排除できており、導電性粒子の接続抵抗が低いと評価できる。
更に、85℃・85%RHの条件で24時間保持後の抵抗値も測定した。室温下での接続抵抗値と差が小さいほど導電性粒子の接続信頼性が優れているものと評価できる。結果を表7に示す。 [Evaluation of connection resistance and connection reliability]
Using the conductive particles of Examples and Comparative Examples, the connection resistance and connection reliability were evaluated by the following methods.
1.0 g of the conductive particles obtained in Examples and Comparative Examples were placed in a vertically standing resin cylinder having an inner diameter of 10 mm, and a load of 2 kN was applied at room temperature (25 ° C., 50% RH). The electrical resistance between the upper and lower electrodes was measured, and the initial volume resistance value was obtained. The lower the initial volume resistance value, the more effectively the oxide film formed on the electrode can be eliminated, and it can be evaluated that the connection resistance of the conductive particles is low.
Furthermore, the resistance value after holding for 24 hours under the conditions of 85 ° C. and 85% RH was also measured. It can be evaluated that the smaller the difference from the connection resistance value at room temperature, the better the connection reliability of the conductive particles. The results are shown in Table 7.
実施例及び比較例の導電性粒子を用いて、接続抵抗及び接続信頼性の評価を以下の方法で行った。
垂直に立てた内径10mmの樹脂製円筒内に、実施例及び比較例で得られた導電性粒子1.0gを入れ、室温下(25℃・50%RH)、2kNの荷重をかけた状態で上下電極間の電気抵抗を測定し、初期体積抵抗値を求めた。初期体積抵抗値が低いほど、電極に形成されている酸化膜を効果的に排除できており、導電性粒子の接続抵抗が低いと評価できる。
更に、85℃・85%RHの条件で24時間保持後の抵抗値も測定した。室温下での接続抵抗値と差が小さいほど導電性粒子の接続信頼性が優れているものと評価できる。結果を表7に示す。 [Evaluation of connection resistance and connection reliability]
Using the conductive particles of Examples and Comparative Examples, the connection resistance and connection reliability were evaluated by the following methods.
1.0 g of the conductive particles obtained in Examples and Comparative Examples were placed in a vertically standing resin cylinder having an inner diameter of 10 mm, and a load of 2 kN was applied at room temperature (25 ° C., 50% RH). The electrical resistance between the upper and lower electrodes was measured, and the initial volume resistance value was obtained. The lower the initial volume resistance value, the more effectively the oxide film formed on the electrode can be eliminated, and it can be evaluated that the connection resistance of the conductive particles is low.
Furthermore, the resistance value after holding for 24 hours under the conditions of 85 ° C. and 85% RH was also measured. It can be evaluated that the smaller the difference from the connection resistance value at room temperature, the better the connection reliability of the conductive particles. The results are shown in Table 7.
この結果から、実施例で得られた導電性粒子は、比較例で得られた導電性粒子に比べて初期体積抵抗値が低く、接続抵抗が低いことが判る。また、実施例で得られた導電性粒子は、比較例で得られた導電性粒子に比べて、初期体積抵抗値と85℃・85%RHで24時間後の抵抗値との差が小さく、接続信頼性が高いものであることが判る。特に、ニッケル-リンめっき層が形成されている実施例1及び2で得られた導電性粒子と、比較例3で得られた導電性粒子とを対比すると、真空下で加熱することにより、接続抵抗が低く、接続信頼性にも優れる導電性粒子が得られることが判る。また、ニッケル-ホウ素めっき層が形成されている実施例4及び5で得られた導電性粒子と、比較例6で得られた導電性粒子とを対比すると、真空下で加熱することにより、接続抵抗が低く、接続信頼性にも優れる導電性粒子が得られることが判る。
From this result, it can be seen that the conductive particles obtained in the examples have a lower initial volume resistance value and lower connection resistance than the conductive particles obtained in the comparative example. Further, the conductive particles obtained in the examples had a smaller difference between the initial volume resistance value and the resistance value after 24 hours at 85 ° C. and 85% RH as compared with the conductive particles obtained in the comparative example. It can be seen that the connection reliability is high. In particular, when the conductive particles obtained in Examples 1 and 2 on which the nickel-phosphorus plating layer is formed and the conductive particles obtained in Comparative Example 3 are compared, they are connected by heating under vacuum. It can be seen that conductive particles having low resistance and excellent connection reliability can be obtained. Further, when the conductive particles obtained in Examples 4 and 5 on which the nickel-boron plated layer is formed and the conductive particles obtained in Comparative Example 6 are compared, they are connected by heating under vacuum. It can be seen that conductive particles having low resistance and excellent connection reliability can be obtained.
Claims (10)
- 芯材粒子の表面に導電層としてのニッケルめっき層が形成されてなる導電性粒子において、
走査型オージェ電子分光分析装置により測定した、前記導電層の表面から深さ方向5nm以内におけるニッケルとリンの合計に対する炭素のモル比(C/(Ni+P))、又はニッケルとホウ素の合計に対する炭素のモル比(C/(Ni+B))が0.0002以上1.65以下であり、ニッケルとリンの合計に対する酸素のモル比(O/(Ni+P))、又はニッケルとホウ素の合計に対する酸素のモル比(O/(Ni+B))が0.0001以上2.0以下であり、且つ、ニッケルに対するリンのモル比(P/Ni)、又はニッケルに対するホウ素のモル比(B/Ni)が0.003以上0.7以下である導電性粒子。 In conductive particles in which a nickel-plated layer as a conductive layer is formed on the surface of core material particles.
The molar ratio of carbon to total nickel and phosphorus (C / (Ni + P)) within 5 nm of the surface of the conductive layer, or carbon to total nickel and boron, as measured by a scanning Auger electron spectroscopic analyzer. The molar ratio (C / (Ni + B)) is 0.0002 or more and 1.65 or less, and the molar ratio of oxygen to the total of nickel and phosphorus (O / (Ni + P)) or the molar ratio of oxygen to the total of nickel and boron. (O / (Ni + B)) is 0.0001 or more and 2.0 or less, and the molar ratio of phosphorus to nickel (P / Ni) or the molar ratio of boron to nickel (B / Ni) is 0.003 or more. Conductive particles that are 0.7 or less. - 芯材粒子の表面に導電層としてのニッケルめっき層が形成されてなる導電性粒子において、
飛行時間型二次イオン質量分析装置(TOF-SIMS)により測定した、前記導電層の表面から深さ方向1nm以内におけるNi+の正イオンのカウント強度に対するCH4N+の正イオンのカウント強度(CH4N+/Ni+)が0.1以下であるか、Ni-の負イオンのカウント強度に対するC2H3O2 -の負イオンのカウント強度(C2H3O2 -/Ni-)が10.0以下であるか、Ni-の負イオンのカウント強度に対するPO2 -の負イオンのカウント強度(PO2 -/Ni-)が10.0以下であるか、又はNi-の負イオンのカウント強度に対するB2O4H3 -及びB3O6H4 -の負イオンのカウント強度((B2O4H3 -+B3O6H4 -)/Ni-)が10.0以下である導電性粒子。 In conductive particles in which a nickel-plated layer as a conductive layer is formed on the surface of core material particles.
CH 4 N + positive ion count intensity (CH 4 N + positive ion count intensity with respect to Ni + positive ion count intensity within 1 nm in the depth direction from the surface of the conductive layer, as measured by a time-of-flight secondary ion mass spectrometer (TOF-SIMS). CH 4 N + / Ni + ) is 0.1 or less, or the count intensity of negative ions of C 2 H 3 O 2 − with respect to the count intensity of negative ions of Ni − (C 2 H 3 O 2 − / Ni −) ) or it is 10.0 or less, Ni - the PO 2 for counting the strength of the negative ion - negative ion count strength (PO 2 - / Ni -) is either 10.0 or less, or Ni - negative B 2 O for counting the strength of the ion 4 H 3 - and B 3 O 6 H 4 - negative ion count strength ((B 2 O 4 H 3 - + B 3 O 6 H 4 -) / Ni -) 10. Conductive particles that are 0 or less. - 前記導電層の厚みが5nm以上2000nm以下である請求項1又は2に記載の導電性粒子。 The conductive particles according to claim 1 or 2, wherein the thickness of the conductive layer is 5 nm or more and 2000 nm or less.
- 平均粒子径が0.1μm以上50μm以下である請求項1~3のいずれか1項に記載の導電性粒子。 The conductive particle according to any one of claims 1 to 3, wherein the average particle size is 0.1 μm or more and 50 μm or less.
- 前記導電層の外表面に突起を有する請求項1~4のいずれか1項に記載の導電性粒子。 The conductive particle according to any one of claims 1 to 4, which has protrusions on the outer surface of the conductive layer.
- 前記導電層の外表面が平滑である請求項1~4のいずれか1項に記載の導電性粒子。 The conductive particle according to any one of claims 1 to 4, wherein the outer surface of the conductive layer is smooth.
- 請求項1~6のいずれか1項に記載の導電性粒子とバインダー樹脂とを含む導電性材料。 A conductive material containing the conductive particles according to any one of claims 1 to 6 and a binder resin.
- 請求項7に記載の導電性材料を介して被接続部材同士が接続されている接続構造体。 A connection structure in which connected members are connected to each other via the conductive material according to claim 7.
- 芯材粒子の表面に導電層を有する導電性粒子を、1000Pa以下の真空下、温度200~600℃で加熱する工程を有する、請求項1~6のいずれか1項に記載の導電性粒子の製造方法。 The conductive particle according to any one of claims 1 to 6, further comprising a step of heating the conductive particle having a conductive layer on the surface of the core material particle at a temperature of 200 to 600 ° C. under a vacuum of 1000 Pa or less. Production method.
- 前記芯材粒子の表面に無電解めっき法で前記導電層を形成して得られた導電性粒子を加熱する請求項9に記載の導電性粒子の製造方法。 The method for producing conductive particles according to claim 9, wherein the conductive particles obtained by forming the conductive layer on the surface of the core material particles by an electroless plating method are heated.
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CN (1) | CN115667580A (en) |
TW (1) | TW202219318A (en) |
WO (1) | WO2021235435A1 (en) |
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TWI830643B (en) * | 2022-08-26 | 2024-01-21 | 日商納美仕有限公司 | Conductive paste, electrode, electronic component, and electronic instrument |
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JP2000243132A (en) * | 1999-02-22 | 2000-09-08 | Nippon Chem Ind Co Ltd | Conductive electroless plating powder, manufacture thereof, and conductive material made thereof |
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JP3493375B2 (en) * | 1994-11-21 | 2004-02-03 | 株式会社アルバック | Low Outgassing High Corrosion Resistant Aluminum Vacuum Vessel, Vacuum Equipment Parts, and Method of Manufacturing Same |
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TW554348B (en) * | 1999-05-13 | 2003-09-21 | Shinetsu Chemical Co | Conductive powder and making process |
JP2002025345A (en) * | 2000-07-05 | 2002-01-25 | Nisshin Steel Co Ltd | Conductive particle with excellent migration resistance property |
JP2003077335A (en) | 2001-08-30 | 2003-03-14 | Hitachi Chem Co Ltd | Surface treated conductive particles, treating method for conductive particles, adhesive for circuit connection using the conductive particles, and circuit connection structure |
JP4476736B2 (en) * | 2003-08-08 | 2010-06-09 | 昭和電工株式会社 | Method for producing substrate with black film |
CN1833052B (en) * | 2003-08-08 | 2010-10-20 | 昭和电工株式会社 | Production method of substrate with black film and substrate with black film |
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KR100770395B1 (en) * | 2007-04-19 | 2007-10-26 | (주)메인일렉콤 | Method for manufacturing sectional conductive material-based cover applied to cushion gasket for shielding of electro magnetic waves |
JP2009129956A (en) * | 2007-11-20 | 2009-06-11 | Meidensha Corp | Vacuum capacitor |
CN101748427A (en) * | 2008-12-02 | 2010-06-23 | 北京有色金属研究总院 | Titanium plate of a kind of plated with thick gold membrane and preparation method thereof |
KR101651932B1 (en) * | 2009-10-26 | 2016-08-30 | 한화케미칼 주식회사 | Method for manufacturing of conductive metal thin film using carboxylic acid |
JP5410387B2 (en) | 2010-08-31 | 2014-02-05 | デクセリアルズ株式会社 | Conductive particles, method for producing the same, anisotropic conductive film, joined body, and connection method |
KR101365457B1 (en) * | 2012-03-15 | 2014-02-21 | 한국기계연구원 | Method of Manufacturing Ni-coated Nano- carbons |
JP6166860B2 (en) * | 2012-05-16 | 2017-07-19 | 小林 博 | Method for producing graphene, method for producing graphene joined body obtained by joining the graphene, and method for producing substrate or part using the graphene or the graphene joined body |
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JP6423687B2 (en) | 2013-11-01 | 2018-11-14 | 積水化学工業株式会社 | Conductive particles, conductive materials, and connection structures |
JP5695768B2 (en) * | 2014-02-04 | 2015-04-08 | 日本化学工業株式会社 | Conductive powder and conductive material including the same |
JP6340876B2 (en) * | 2014-03-31 | 2018-06-13 | 日立化成株式会社 | Conductive particles |
JP2017134902A (en) | 2016-01-25 | 2017-08-03 | 日立化成株式会社 | Coated conductive particle, circuit connection material, and connection structure |
CN110706941B (en) * | 2019-10-18 | 2020-11-24 | 中国地质大学(北京) | Preparation method of partially-alloyed oxygen-deficient tin oxide supercapacitor positive electrode material |
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JPS63153280A (en) * | 1986-12-17 | 1988-06-25 | Nippon Shirika Kogyo Kk | Production of electrically conductive inorganic siliceous material |
JP2000243132A (en) * | 1999-02-22 | 2000-09-08 | Nippon Chem Ind Co Ltd | Conductive electroless plating powder, manufacture thereof, and conductive material made thereof |
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