JP5973257B2 - Conductive particles and conductive material containing the same - Google Patents
Conductive particles and conductive material containing the same Download PDFInfo
- Publication number
- JP5973257B2 JP5973257B2 JP2012149772A JP2012149772A JP5973257B2 JP 5973257 B2 JP5973257 B2 JP 5973257B2 JP 2012149772 A JP2012149772 A JP 2012149772A JP 2012149772 A JP2012149772 A JP 2012149772A JP 5973257 B2 JP5973257 B2 JP 5973257B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- nickel
- particles
- conductive
- conductive particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002245 particle Substances 0.000 title claims description 216
- 239000004020 conductor Substances 0.000 title description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 131
- 229910052759 nickel Inorganic materials 0.000 claims description 65
- 229910052698 phosphorus Inorganic materials 0.000 claims description 63
- 239000011574 phosphorus Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 54
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 49
- 239000007771 core particle Substances 0.000 claims description 42
- 229920005989 resin Polymers 0.000 claims description 40
- 239000011347 resin Substances 0.000 claims description 40
- 239000011162 core material Substances 0.000 claims description 38
- -1 phosphorus compound Chemical class 0.000 claims description 38
- 238000007772 electroless plating Methods 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 239000003638 chemical reducing agent Substances 0.000 claims description 32
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 20
- 229910000510 noble metal Inorganic materials 0.000 claims description 16
- 229910052763 palladium Inorganic materials 0.000 claims description 15
- 150000001261 hydroxy acids Chemical class 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 8
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000002585 base Substances 0.000 description 80
- 239000010410 layer Substances 0.000 description 58
- 238000007747 plating Methods 0.000 description 42
- 239000007864 aqueous solution Substances 0.000 description 39
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 239000002002 slurry Substances 0.000 description 15
- 239000000853 adhesive Substances 0.000 description 14
- 230000001070 adhesive effect Effects 0.000 description 14
- 150000002815 nickel Chemical class 0.000 description 14
- 239000004840 adhesive resin Substances 0.000 description 13
- 229920006223 adhesive resin Polymers 0.000 description 13
- 239000002270 dispersing agent Substances 0.000 description 13
- 239000003822 epoxy resin Substances 0.000 description 13
- 229920000647 polyepoxide Polymers 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 239000008139 complexing agent Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 11
- 150000003839 salts Chemical class 0.000 description 11
- 238000003756 stirring Methods 0.000 description 11
- 229910001096 P alloy Inorganic materials 0.000 description 10
- 239000002253 acid Substances 0.000 description 10
- 239000003513 alkali Substances 0.000 description 10
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- 239000000203 mixture Substances 0.000 description 8
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- 238000002441 X-ray diffraction Methods 0.000 description 7
- 229920001940 conductive polymer Polymers 0.000 description 7
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910001453 nickel ion Inorganic materials 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 4
- 229920000459 Nitrile rubber Polymers 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 4
- 229960003237 betaine Drugs 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 4
- 229940053662 nickel sulfate Drugs 0.000 description 4
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229920000877 Melamine resin Polymers 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000007900 aqueous suspension Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229960004275 glycolic acid Drugs 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
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- 239000004094 surface-active agent Substances 0.000 description 3
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- 229910001432 tin ion Inorganic materials 0.000 description 3
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- 150000002941 palladium compounds Chemical class 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
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- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- HELHAJAZNSDZJO-OLXYHTOASA-L sodium L-tartrate Chemical compound [Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O HELHAJAZNSDZJO-OLXYHTOASA-L 0.000 description 1
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- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 235000011083 sodium citrates Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 239000001433 sodium tartrate Substances 0.000 description 1
- 229960002167 sodium tartrate Drugs 0.000 description 1
- 235000011004 sodium tartrates Nutrition 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
Landscapes
- Chemical & Material Sciences (AREA)
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Description
本発明は導電性粒子及びそれを含む導電性材料に関する。 The present invention relates to conductive particles and a conductive material including the same.
異方性導電フィルムや異方性導電ペーストの材料として用いられる導電性粒子としては、一般に芯材粒子の表面に導電性皮膜を形成したものが知られている。導電性皮膜としては、ニッケルのめっき皮膜がしばしば用いられる。そのような導電性粒子の各種の性能を一層高めることを目的として、ニッケルのめっき皮膜を多層構造にしたものが提案されている。 As conductive particles used as a material for an anisotropic conductive film or anisotropic conductive paste, those having a conductive film formed on the surface of core particles are generally known. A nickel plating film is often used as the conductive film. In order to further improve various performances of such conductive particles, a nickel plating film having a multilayer structure has been proposed.
例えば特許文献1には、芯材粒子の表面に形成されたニッケル皮膜が、芯材粒子の表面に形成された第1の層と該第1の層に隣接して形成された第2の層とを含み、第1の層及び第2の層それぞれにおける粒界の配向方向が互いに異なっている導電性粒子が提案されている。この導電性粒子には、ニッケル皮膜と芯材粒子との密着性が向上し、かつ導電性粒子の耐熱性が向上し、高温で長時間保存しても電気抵抗の増加が小さくなるという利点がある。 For example, Patent Document 1 discloses that a nickel film formed on the surface of core material particles includes a first layer formed on the surface of core material particles and a second layer formed adjacent to the first layer. In other words, conductive particles having different orientation directions of grain boundaries in the first layer and the second layer have been proposed. This conductive particle has the advantage that the adhesion between the nickel coating and the core particle is improved, the heat resistance of the conductive particle is improved, and the increase in electrical resistance is small even when stored at a high temperature for a long time. is there.
また特許文献2には、ニッケル皮膜からなる導電層が、芯材粒子の表面に接する非結晶構造ニッケル−リンめっき層と、該非結晶構造ニッケル−リンめっき層の表面に接する結晶構造ニッケル−タングステン−リンめっき層とを有する導電性粒子が提案されている。この導電性粒子は、芯材粒子と導電層との密着性が高く、耐衝撃性及び導電性に優れたものであると、同文献には記載されている。 Patent Document 2 discloses that a conductive layer made of a nickel coating has an amorphous structure nickel-phosphorous plating layer in contact with the surface of the core material particles, and a crystalline structure nickel-tungsten in contact with the surface of the amorphous structure nickel-phosphorus plating layer. Conductive particles having a phosphor plating layer have been proposed. This document describes that the conductive particles have high adhesion between the core particles and the conductive layer and are excellent in impact resistance and conductivity.
ところで、芯材粒子の表面にニッケル皮膜を形成する場合には、一般にニッケルを含むめっき液を用い、還元剤によって芯材粒子の表面においてニッケルを還元析出させる方法が採用されている。還元剤としては次亜リン酸塩が用いられることが多い。還元剤として次亜リン酸塩を用いると、還元析出によって形成されたニッケル皮膜中に結果的にリンが含有される。ニッケル皮膜中でのリンの存在は、ニッケル皮膜の導電性を低下させる一因となるので、その観点からは、リンの存在量は極力少ないことが望ましい。一方、リンの存在量が少ない場合には、ニッケルが本来的に有する磁性に起因して、導電性粒子どうしが磁性凝集しやすい傾向にあり、その結果、導電性粒子の分散性が低下しやすくなる。分散性の低下は、導電性粒子を例えば異方性導電フィルムや異方性導電ペーストとして用いた場合に、回路の短絡の一因となる場合がある。上述した特許文献2においては、同文献に記載の導電性粒子のニッケル皮膜における下地層のニッケル−リン層、及び上層のニッケル−タングステン−リン層それぞれのリンの含有量が規定されているところ、その含有量では、導電性と分散性の双方を同時に満足させることは容易ではない。 By the way, when a nickel film is formed on the surface of the core material particles, a method is generally employed in which a plating solution containing nickel is used and nickel is reduced and deposited on the surface of the core material particles by a reducing agent. Hypophosphite is often used as the reducing agent. When hypophosphite is used as the reducing agent, phosphorus is eventually contained in the nickel film formed by reduction deposition. The presence of phosphorus in the nickel film contributes to a decrease in the conductivity of the nickel film. From this point of view, it is desirable that the amount of phosphorus present is as small as possible. On the other hand, when there is a small amount of phosphorus, the conductive particles tend to be magnetically aggregated due to the inherent magnetism of nickel, and as a result, the dispersibility of the conductive particles tends to decrease. Become. When the conductive particles are used as, for example, an anisotropic conductive film or an anisotropic conductive paste, the decrease in dispersibility may cause a short circuit of the circuit. In Patent Document 2 described above, the contents of phosphorus in the nickel-phosphorus layer of the underlying layer and the nickel-tungsten-phosphorus layer of the upper layer in the nickel film of the conductive particles described in the same document are prescribed, With that content, it is not easy to satisfy both conductivity and dispersibility at the same time.
したがって本発明の課題は、前述した従来技術の導電性粒子よりも各種の性能が一層向上した導電性粒子を提供することにある。 Therefore, the subject of this invention is providing the electroconductive particle which various performances improved further compared with the electroconductive particle of the prior art mentioned above.
本発明は、芯材粒子の表面に導電性皮膜が形成されてなる導電性粒子において、
前記導電性皮膜が、前記芯材粒子の表面に接する下地皮膜と、該下地皮膜の表面に接する上層皮膜とを有し、
前記下地皮膜は、ニッケル及びリンを含み、
前記下地皮膜は、平坦部と、該平坦部から突出し、かつ該平坦部からの連続体になっている複数の突起部とを有し、該平坦部と該突起部とが同一の材料から構成されており、
前記上層皮膜は、結晶構造を有し、ニッケル、リン及び1種類以上の金属M(ただしニッケルを除く。)を含み、
前記上層皮膜は、平坦部と、該平坦部から突出し、かつ該平坦部からの連続体になっている複数の突起部とを有し、該平坦部と該突起部とが同一の材料から構成されていることを特徴とする導電性粒子を提供するものである。
The present invention provides conductive particles in which a conductive film is formed on the surface of the core material particles.
The conductive film has a base film in contact with the surface of the core particles, and an upper film in contact with the surface of the base film,
The undercoat includes nickel and phosphorus,
The undercoat has a flat portion and a plurality of protrusions protruding from the flat portion and being a continuous body from the flat portion, and the flat portion and the protrusion are made of the same material. Has been
The upper film has a crystal structure, and includes nickel, phosphorus, and one or more kinds of metals M (excluding nickel),
The upper layer coating is a flat portion projects from the flat part, and a plurality of protrusions that is a continuum from the flat portion, and the flat portion and the protrusion portion from the same material The present invention provides conductive particles characterized by being configured.
更に本発明は、前記の導電性粒子の製造方法であって、ニッケル源及びリン化合物からなる還元剤を含む無電解めっき浴を用い、無電解めっきによって芯材粒子の表面にニッケル及びリンを含む突起部を有する下地皮膜を形成し、
ニッケル源、金属M(ただしニッケルを除く。)源、リン化合物からなる還元剤及びヒドロキシ酸を含む無電解めっき浴を用い、無電解めっきによって前記下地皮膜の表面に、ニッケル、リン及び金属M(ただしニッケルを除く。)を含み、かつ平坦部と、該平坦部から突出し、かつ該平坦部からの連続体になっている複数の突起部とを有し、該平坦部と該突起部とが同一の材料から構成されている上層皮膜を形成する工程を有することを特徴とする導電性粒子の製造方法を提供するものである。
Furthermore, the present invention is the above-described method for producing conductive particles, which uses an electroless plating bath containing a nickel source and a reducing agent comprising a phosphorus compound, and contains nickel and phosphorus on the surface of the core material particles by electroless plating. Form a base film with protrusions ,
Using an electroless plating bath containing a nickel source, a metal M (excluding nickel) source, a reducing agent composed of a phosphorus compound and a hydroxy acid, nickel, phosphorus and metal M ( Except for nickel.) And a plurality of protrusions protruding from the flat part and being a continuous body from the flat part, and the flat part and the protrusions are The present invention provides a method for producing conductive particles, which includes a step of forming an upper layer film made of the same material.
本発明によれば導電性が高い導電性粒子が提供される。特に、高温高湿下で保存した後でも導電性の低下が抑制された導電性粒子が提供される。したがって本発明の導電性粒子を例えば異方性導電フィルムや異方性導電ペーストの材料として用いた場合、かかる導電性フィルムや導電性ペーストは、導電性が高く、かつ過酷な環境下での信頼性が高いものとなる。 According to the present invention, conductive particles having high conductivity are provided. In particular, conductive particles in which a decrease in conductivity is suppressed even after storage at high temperature and high humidity are provided. Therefore, when the conductive particles of the present invention are used, for example, as a material for an anisotropic conductive film or anisotropic conductive paste, the conductive film or conductive paste has high conductivity and is reliable in harsh environments. It becomes a thing with high property.
以下、本発明をその好ましい実施形態に基づき説明する。本発明の導電性粒子は、上述したとおり、芯材粒子と、該芯材粒子の表面に接する下地皮膜及び該下地皮膜の表面に接する上層皮膜を有する導電性被膜とを備えている。上層皮膜は結晶構造を有し、ニッケル、リン及び1種類以上の金属M(ただしニッケルを除く。)を含有する。また上層皮膜は複数の突起部を有している。本発明においては、このような構成を有する上層皮膜と、ニッケル及びリンを含む下地皮膜とを組み合わせることによって、粒子の導電性、特に高温高湿という過酷な環境下での導電性を高めている。 Hereinafter, the present invention will be described based on preferred embodiments thereof. As described above, the conductive particles of the present invention include core material particles, and a conductive film having a base film that contacts the surface of the core material particles and an upper film that contacts the surface of the base film. The upper layer film has a crystal structure and contains nickel, phosphorus, and one or more kinds of metals M (excluding nickel). The upper film has a plurality of protrusions. In the present invention, by combining the upper layer film having such a configuration with a base film containing nickel and phosphorus, the conductivity of the particles, particularly the conductivity in a harsh environment of high temperature and high humidity is increased. .
上述のとおり、下地皮膜にはリンが含まれている。下地皮膜におけるリンの含有量は、本発明の導電性粒子の具体的な用途に応じ適切に設定することができる。例えば下地皮膜のリン含有量を1質量%以上10質量%未満に設定することで、導電性粒子の導電性が大きく向上する。導電性をより一層向上させる観点から、下地皮膜のリン含有量は、8質量%以下であることが好ましく、7質量%以下であることが更に好ましく、とりわけ6質量%以下であることが好ましい。尤も、下地皮膜のリン含有量が5質量%以上と比較的高い場合であっても、上述した構成の上層皮膜が存在することによって、導電性を満足すべき程度に高く保つことができる。そして、上層皮膜の存在下においては、下地皮膜のリン含有量を10質量%未満と低くしても、磁性凝集を効果的に抑制することができ、導電性粒子の良好な分散性を維持することができる。このような分散性維持の効果が奏される理由は明らかではないが、1つの理由として上層皮膜中の金属Mが、ニッケルの磁性に起因する凝集を防止するのではないかと考えられる。 As described above, the base film contains phosphorus. The phosphorus content in the base film can be appropriately set according to the specific use of the conductive particles of the present invention. For example, by setting the phosphorus content of the base film to 1% by mass or more and less than 10% by mass, the conductivity of the conductive particles is greatly improved. From the viewpoint of further improving the conductivity, the phosphorus content of the base film is preferably 8% by mass or less, more preferably 7% by mass or less, and particularly preferably 6% by mass or less. However, even if the phosphorus content of the base film is relatively high, such as 5% by mass or more, the presence of the upper film having the above-described structure can keep the conductivity high enough to satisfy. In the presence of the upper film, even if the phosphorus content of the base film is reduced to less than 10% by mass, magnetic aggregation can be effectively suppressed and good dispersibility of the conductive particles is maintained. be able to. Although the reason why such an effect of maintaining dispersibility is exerted is not clear, it is considered that one reason is that the metal M in the upper film prevents aggregation due to the magnetism of nickel.
下地皮膜におけるリンの含有量は10質量%以上に設定することもできる。例えば10〜18質量%とすることが好ましく、10〜15質量%とすることが更に好ましい。下地皮膜におけるリンの含有量を高めに設定することは、本発明の導電性粒子が磁気凝集を起こしづらくなる観点から有利である。その半面、下地皮膜におけるリンの含有量を高めに設定することは、下地皮膜の導電性の向上の点からはマイナスに作用することがある。しかし本発明においては、下地皮膜の表面に、上述した構造の上層皮膜を形成することで、導電性粒子全体としての導電性を確保している。 The phosphorus content in the undercoat can also be set to 10% by mass or more. For example, it is preferable to set it as 10-18 mass%, and it is still more preferable to set it as 10-15 mass%. Setting the phosphorus content in the undercoat to be high is advantageous from the viewpoint of making it difficult for the conductive particles of the present invention to cause magnetic aggregation. On the other hand, setting the phosphorus content in the undercoat to be high may have a negative effect from the viewpoint of improving the conductivity of the undercoat. However, in the present invention, the conductivity of the conductive particles as a whole is ensured by forming the upper layer film having the structure described above on the surface of the base film.
リンの含有量が上述したいずれの範囲であっても、下地皮膜はニッケル−リン合金から構成されている。ニッケル−リン合金は、後述する導電性粒子の製造工程における下地皮膜の形成時に、ニッケルの還元剤として次亜リン酸又はその塩等のリン化合物を用いた場合に生じる合金である。下地皮膜はニッケル及びリンのみを含んでおり、その他の元素を実質的に含んでいないことが好ましい。その他の元素を実質的に含んでいないとは、下地皮膜を元素分析したとき、ニッケル及びリン以外の元素の割合が1質量%以下であることをいう。なお、下地皮膜におけるニッケルの含有量は、下地皮膜の全量から上述したリンの含有量を差し引いた残部である。 Regardless of the above-described range of phosphorus content, the undercoat is made of a nickel-phosphorus alloy. A nickel-phosphorus alloy is an alloy produced when a phosphorous compound such as hypophosphorous acid or a salt thereof is used as a nickel reducing agent during formation of a base coating in the conductive particle manufacturing process described later. It is preferable that the base film contains only nickel and phosphorus and does not substantially contain other elements. The phrase “substantially free of other elements” means that when the base film is subjected to elemental analysis, the ratio of elements other than nickel and phosphorus is 1% by mass or less. The nickel content in the undercoat is the remainder obtained by subtracting the above-described phosphorus content from the total undercoat.
下地皮膜におけるニッケル含有量及びリン含有量は、後述するとおり、下地皮膜までが形成された芯材粒子を酸に溶解し、得られた溶液中の下地皮膜成分についてICP又は化学分析をすることにより測定することができる。 As described later, the nickel content and the phosphorus content in the base film are obtained by dissolving the core material particles formed up to the base film in an acid and conducting ICP or chemical analysis on the base film component in the obtained solution. Can be measured.
下地皮膜は結晶構造を有しているか又は非結晶構造を有している。ここでいう結晶構造とは、ニッケル−リン合金の結晶構造のことである。また、非結晶構造を有しているとは、下地皮膜が何らの結晶構造も有していないことを意味する。下地皮膜が結晶構造を有していると、導電性粒子の導電性が向上する。一方、下地皮膜が非結晶構造を有していると、導電性粒子の磁気凝集が抑制されて分散性が向上する。 The undercoat has a crystalline structure or an amorphous structure. The crystal structure here is a crystal structure of a nickel-phosphorus alloy. Moreover, having an amorphous structure means that the undercoat has no crystal structure. When the ground film has a crystal structure, the conductivity of the conductive particles is improved. On the other hand, when the undercoat has an amorphous structure, magnetic aggregation of the conductive particles is suppressed and dispersibility is improved.
下地皮膜が結晶構造を有しているか、それとも非結晶構造を有しているかは、例えば下地皮膜までが形成された芯材粒子についてXRD測定を行うことで判断できる。下地皮膜を結晶構造とするか、それとも非結晶構造とするかは、例えば、後述する導電性粒子の製造方法において、下地皮膜を無電解めっきで形成するときのめっき浴の組成に依存する。具体的には、無電解めっき時に用いられる還元剤であるリン化合物のめっき浴中での濃度が低いほど結晶構造を有する下地皮膜が形成されやすい。逆に、めっき浴中でのリン化合物の濃度が高いほど非結晶構造を有する下地皮膜が形成されやすい。例えば、下地皮膜に含まれるリンの量が10質量%未満になるような濃度のリン化合物を含むめっき浴を用いると、結晶構造を有する下地皮膜が形成されやすい。逆に、下地皮膜に含まれるリンの量が10質量%以上になるような濃度のリン化合物を含むめっき浴を用いると、非結晶構造を有する下地皮膜が形成されやすい。 Whether the base film has a crystal structure or an amorphous structure can be determined by, for example, performing XRD measurement on the core material particles formed up to the base film. Whether the base film has a crystalline structure or an amorphous structure depends on, for example, the composition of the plating bath when the base film is formed by electroless plating in the method for producing conductive particles described later. Specifically, the lower the concentration of the phosphorus compound, which is a reducing agent used during electroless plating, in the plating bath, the easier it is to form a base film having a crystal structure. Conversely, the higher the concentration of the phosphorus compound in the plating bath, the easier it is to form a base film having an amorphous structure. For example, when a plating bath containing a phosphorus compound at a concentration such that the amount of phosphorus contained in the undercoat is less than 10% by mass is used, an undercoat having a crystal structure is easily formed. Conversely, when a plating bath containing a phosphorus compound at a concentration such that the amount of phosphorus contained in the undercoat is 10% by mass or more is used, an undercoat having an amorphous structure is likely to be formed.
下地皮膜は、芯材粒子の表面に略均一な厚みで形成することができる。これに代えて、複数の突起部を形成して下地皮膜を凹凸形状に形成することもできる。後者の場合、下地皮膜は、平坦部と、該平坦部から突出し、かつ該平坦部からの連続体になっている複数の突起部とを有し、該平坦部と該突起部とが同一の材料、すなわちニッケル−リン合金から構成されていることが好ましい。「連続体」とは、下地皮膜の突起部と平坦部とが単一の工程によって形成され、かつ下地皮膜の平坦部と突起部との間に、継ぎ目等の一体感を損なうような部位が存在しないことを意味する。下地皮膜を凹凸形状に形成されていると、その凹凸形状が導電性粒子の表面に反映される。したがって、本発明の導電性粒子を用いて電極の導通をとる場合、電極表面に形成されている酸化皮膜を突起部が突き破ることができ、接続抵抗の低減を図ることができる。しかも突起部が下地皮膜の平坦部と同一材料から構成されて下地皮膜の平坦部と連続体になっていることで、導電性粒子の突起の強度が確保されるので、導電性粒子に圧力が加わっても突起部が破損しづらい。 The undercoat can be formed on the surface of the core particle with a substantially uniform thickness. Instead, a plurality of protrusions can be formed to form the base film in a concavo-convex shape. In the latter case, the base film has a flat portion and a plurality of protrusions that protrude from the flat portion and are continuous from the flat portion, and the flat portion and the protrusion are the same. The material is preferably composed of a nickel-phosphorus alloy. A “continuum” is a portion in which the protrusion and flat portion of the base film are formed by a single process, and there is a portion that impairs the sense of unity such as a seam between the flat portion and the protrusion of the base film. It means not existing. When the ground film is formed in a concavo-convex shape, the concavo-convex shape is reflected on the surface of the conductive particles. Therefore, when conducting the electrode using the conductive particles of the present invention, the protrusion can break through the oxide film formed on the electrode surface, and the connection resistance can be reduced. Moreover, since the protrusions are made of the same material as the flat part of the base film and are continuous with the flat part of the base film, the strength of the protrusions of the conductive particles is ensured, so that pressure is applied to the conductive particles. Even if added, the protrusions are hard to break.
導電性粒子において、下地皮膜が略均一な厚さを有すること、又は下地皮膜が平坦部及び突起部を有することは、導電性粒子の断面を顕微鏡観察することによって確認できる。 In the conductive particles, it can be confirmed by observing the cross section of the conductive particles with a microscope that the base film has a substantially uniform thickness, or that the base film has flat portions and protrusions.
下地皮膜の表面に直接接する上層皮膜は、先に述べたとおり、ニッケル、リン及び1種以上の金属M(ただしニッケルを除く。)を含有する。金属Mは遷移金属であること好ましく、ニッケルよりもモース硬度が高いものであることが更に好ましい。特にモース硬度が4以上の金属Mを用いると、導電性が一層高まるという有利な効果が奏されるので好ましい。この理由としては、上層皮膜が硬くなるので、導電性粒子を含む異方性導電フィルムを用いて電極間の電気的導通をとる場合に、導電性粒子と電極との界面に存在する樹脂を排除しやすくなること、及び導電性粒子が電極表面に存在する酸化膜を突き破りやすくなることが挙げられる。 As described above, the upper layer film that is in direct contact with the surface of the base film contains nickel, phosphorus, and one or more kinds of metals M (excluding nickel). The metal M is preferably a transition metal, and more preferably has a Mohs hardness higher than that of nickel. In particular, it is preferable to use a metal M having a Mohs hardness of 4 or more because an advantageous effect that the conductivity is further increased can be obtained. The reason for this is that the upper layer film becomes hard, so when using an anisotropic conductive film containing conductive particles to establish electrical continuity between the electrodes, the resin present at the interface between the conductive particles and the electrodes is eliminated. And the conductive particles easily break through the oxide film present on the electrode surface.
金属Mの好ましい例としては、周期表の第6族、第8族、第9族及び第10族の遷移金属元素が挙げられる。特に好ましくは、パラジウム、コバルト、ロジウム、鉄、白金、イリジウム、タングステン、モリブデン及びクロムなどが挙げられる。中でもモース硬度が4〜10である金属、例えばタングステン、モリブデン、パラジウム及び白金から選ばれる1種類以上を用いると、導電性をより一層高められるので好ましい。とりわけ、タングステン及びモリブデンから選ばれる1種類以上を用いることが好ましい。また1種類だけではなく2種類以上を同時に用いる方が、導電性の面で一層好ましい。 Preferable examples of the metal M include transition metal elements of Groups 6, 8, 9, and 10 of the periodic table. Particularly preferred are palladium, cobalt, rhodium, iron, platinum, iridium, tungsten, molybdenum and chromium. Among them, the use of a metal having a Mohs hardness of 4 to 10, for example, one or more selected from tungsten, molybdenum, palladium, and platinum is preferable because the conductivity can be further enhanced. In particular, it is preferable to use one or more selected from tungsten and molybdenum. In addition, it is more preferable in terms of conductivity to use not only one type but also two or more types simultaneously.
上層皮膜における金属Mの含有量は、導電性粒子の導電性を更に良好にする観点から、好ましくは1〜20質量%、更に好ましくは2〜15質量%、一層好ましくは3〜13質量である。この含有量は、上層皮膜が金属Mを2種類以上含有する場合、2種類以上の金属Mの合計の含有量である。また、上層皮膜におけるリンの含有量は、導電性粒子の導電性を更に良好にする観点から、好ましくは1〜7質量%、更に好ましくは1〜5質量%、一層好ましくは1〜3質量%である。ニッケル含有量は、導電性粒子の導電性を更に向上させる観点から、75質量%以上、特に80質量%以上であることが好ましい。上層皮膜におけるリン含有量及び金属Mの含有量は、後述する方法で測定できる。上層皮膜におけるニッケル含有量も、リン含有量及び金属Mの含有量と同様の方法で測定できる。 The content of the metal M in the upper film is preferably 1 to 20% by mass, more preferably 2 to 15% by mass, and further preferably 3 to 13% by mass from the viewpoint of further improving the conductivity of the conductive particles. . This content is the total content of two or more types of metals M when the upper layer film contains two or more types of metals M. Further, the phosphorus content in the upper film is preferably 1 to 7% by mass, more preferably 1 to 5% by mass, and still more preferably 1 to 3% by mass from the viewpoint of further improving the conductivity of the conductive particles. It is. From the viewpoint of further improving the conductivity of the conductive particles, the nickel content is preferably 75% by mass or more, particularly 80% by mass or more. The phosphorus content and the metal M content in the upper film can be measured by the method described later. The nickel content in the upper film can also be measured by the same method as the phosphorus content and the metal M content.
上層皮膜は結晶構造を有している。これによって、導電性粒子の導電性が向上する。特に上層皮膜が結晶構造を有していることに加えて、先に述べた下地皮膜も結晶構造を有していると、導電性粒子はその導電性が一層向上したものとなるので好ましい。上層皮膜の結晶構造は、金属ニッケル、ニッケル−リン合金又はニッケル−リン−金属M合金のどれかであり得る。上層皮膜が結晶構造を有しているか否かは、皮膜をFIB等で薄片化後、粒子表面から数nm程度の深さの皮膜をX線回折等で測定し、ニッケル等の回折ピークが観察されるか否かで判断される。更に、上層皮膜が金属Mを含有しているか否かは、導電性粒子を希硝酸などで溶解し、溶出液を経時的に複数採取して、各時点の溶出液に含まれる元素を分析することで確かめることができる。 The upper film has a crystal structure. Thereby, the electroconductivity of electroconductive particle improves. In particular, in addition to the upper layer film having a crystal structure, it is preferable that the above-described undercoat film also has a crystal structure, since the conductive particles are further improved in conductivity. The crystal structure of the upper film can be either metallic nickel, nickel-phosphorus alloy or nickel-phosphorus-metal M alloy. Whether the upper film has a crystal structure is determined by measuring the film with a depth of several nanometers from the particle surface by X-ray diffraction after thinning the film with FIB, etc., and observing diffraction peaks such as nickel It is judged by whether or not it is done. Further, whether or not the upper layer film contains the metal M is determined by dissolving conductive particles with dilute nitric acid or the like, collecting a plurality of eluates over time, and analyzing elements contained in the eluate at each time point. This can be confirmed.
上層皮膜が結晶構造を有するためには、例えば、後述する導電性粒子の製造方法において、上層皮膜を無電解めっきで形成するときのめっき浴の組成を適切に調整すればよい。具体的には、無電解めっき時に用いられる還元剤としてリン化合物を用いる場合には、めっき浴中での該リン化合物の濃度が低いほど結晶構造を有する上層皮膜が形成されやすい。例えば、上層皮膜に含まれるリンの量が10質量%未満になるような濃度のリン化合物を含むめっき浴を用いると、結晶構造を有する上層皮膜が形成されやすい。 In order for the upper layer film to have a crystal structure, for example, in the method for producing conductive particles described later, the composition of the plating bath when the upper layer film is formed by electroless plating may be appropriately adjusted. Specifically, when a phosphorus compound is used as the reducing agent used during electroless plating, the lower layer concentration of the phosphorus compound in the plating bath is more likely to form an upper film having a crystal structure. For example, when a plating bath containing a phosphorus compound at a concentration such that the amount of phosphorus contained in the upper layer film is less than 10% by mass is used, an upper layer film having a crystal structure is easily formed.
上層皮膜はその表面が凹凸形状になっている。詳細には、上層皮膜は、平坦部と、該平坦部から突出し、かつ該平坦部からの連続体になっている複数の突起部とを有し、該平坦部と該突起部とが同一の材料から構成されていることが好ましい。各突起部は、上層皮膜を構成する材料からなる単一の連続体の形態をしていてもよく、あるいは上層皮膜を構成する材料からなる粒子が列状に複数個連結してなる粒子連結体から構成され、該粒子間に粒界が観察される形態であってもよい。上層皮膜の表面が凹凸形状になっていることで、その凹凸形状が導電性粒子の表面に反映される。したがって、本発明の導電性粒子を用いて電極の導通をとる場合、電極表面に形成されている酸化皮膜を突起部が突き破ることができ、接続抵抗の低減を図ることができる。しかも突起部が上層皮膜の平坦部と同一材料から構成されて上層皮膜の平坦部と連続体になっていることで、導電性粒子の突起の強度が確保されるので、導電性粒子に圧力が加わっても突起部が破損しづらい。特に、先に述べた下地皮膜の表面も凹凸形状を有していると、該凹凸形状と、上層皮膜の表面の凹形状とが重畳された凹凸形状が導電性粒子の表面に反映される。このことによって、酸化皮膜を一層容易に突き破ることができる。また、突起部の破損が一層起こりづらくなる。この場合、下地皮膜に形成されている突起部の位置と、上層皮膜に形成されている突起部の位置とは同じであってもよく、あるいは異なっていてもよい。 The upper layer film has an uneven surface. Specifically, the upper layer film has a flat portion and a plurality of protrusions protruding from the flat portion and being a continuous body from the flat portion, and the flat portion and the protrusion are the same. It is preferable that it is made of a material. Each protrusion may be in the form of a single continuous body made of a material constituting the upper layer film, or a particle connected body in which a plurality of particles made of the material constituting the upper layer film are connected in a row. The grain boundary may be observed between the grains. Since the surface of the upper layer film has an uneven shape, the uneven shape is reflected on the surface of the conductive particles. Therefore, when conducting the electrode using the conductive particles of the present invention, the protrusion can break through the oxide film formed on the electrode surface, and the connection resistance can be reduced. Moreover, since the protrusions are made of the same material as the flat part of the upper film and are continuous with the flat part of the upper film, the strength of the protrusions of the conductive particles is ensured, so that pressure is applied to the conductive particles. Even if added, the protrusions are hard to break. In particular, if the surface of the undercoat described above also has an uneven shape, the uneven shape obtained by superimposing the uneven shape and the concave shape of the surface of the upper layer film is reflected on the surface of the conductive particles. This makes it possible to break through the oxide film more easily. In addition, the damage to the protrusions is less likely to occur. In this case, the position of the protrusion formed on the base film and the position of the protrusion formed on the upper film may be the same or different.
上層皮膜の突起部に関し、上述した「平坦部からの連続体になっている複数の突起部」における「連続体」の意味は、先に述べた下地皮膜に形成されている突起部の連続体と同義である。したがって、例えば下地皮膜の表面に平坦な上層皮膜を形成し、その上に突起形成用のコア粒子、例えば金属、金属酸化物、黒鉛等の非金属無機物、導電性ポリマー等を付着させ、該コア粒子を成長の起点として形成された突起部は、平坦部と突起部とが単一の工程によって形成されたものではないので、本発明にいう連続体に含まれない。尤も、かかるコア粒子を上層皮膜に付着させ、該コア粒子を成長の起点として形成された突起部を有する導電性粒子、つまり平坦部と突起部とが連続体になっていない導電性粒子も、本発明の範囲内であることに留意すべきである。 Regarding the protrusions of the upper film, the meaning of “continuum” in the “plurality of protrusions that are continuous from the flat portion” described above is a continuum of protrusions formed on the base film described above. It is synonymous with. Therefore, for example, a flat upper layer film is formed on the surface of the base film, and core particles for forming protrusions, for example, a non-metallic inorganic material such as metal, metal oxide, and graphite, a conductive polymer, etc. are attached to the core film. Protrusions formed using grains as starting points of growth are not included in the continuum referred to in the present invention because the flat portions and the protrusions are not formed by a single step. However, conductive particles having protrusions formed by attaching such core particles to the upper film and using the core particles as growth starting points, that is, conductive particles in which the flat portion and the protrusions are not continuous, It should be noted that it is within the scope of the present invention.
導電性粒子において、上層皮膜が平坦部及び突起部を有することは、導電性粒子の断面を顕微鏡観察することによって確認できる。 In the conductive particles, it can be confirmed by observing the cross section of the conductive particles with a microscope that the upper film has a flat portion and a protrusion.
以上のとおり、本発明の導電性粒子においてはその表面に、少なくとも上層皮膜に形成された突起部の凹凸形状が反映された突起部が形成されている。この突起部は、その高さHが、平均して20nm以上、特に50nm以上であることが好ましい。突起の数は、導電性粒子の粒径にもよるが、1つの粒子当たり、1〜20000個、特に5〜5000個であることが、導電性粒子の導電性の一層の向上の点から好ましい。突起のアスペクト比は、好ましくは0.5以上、更に好ましくは1以上である。突起のアスペクト比が大きいと、上述した酸化皮膜を容易に突き破ることができるので有利である。また、導電性粒子を用いて異方性導電フィルムを形成した場合には、突起のアスペクト比が大きいと、樹脂排除性が高くなるので、導電性が高くなると考えられる。アスペクト比とは、突起の高さHと突起の基部の長さDとの比、すなわちH/Dで定義される値である。 As described above, in the conductive particles of the present invention, at least the protrusions reflecting the uneven shape of the protrusions formed on the upper layer film are formed on the surface. The protrusion H preferably has an average height H of 20 nm or more, particularly 50 nm or more. Although the number of protrusions depends on the particle size of the conductive particles, it is preferably 1 to 20000, particularly 5 to 5000 per particle, from the viewpoint of further improving the conductivity of the conductive particles. . The aspect ratio of the protrusion is preferably 0.5 or more, more preferably 1 or more. A large aspect ratio of the protrusions is advantageous because it can easily break through the oxide film described above. In addition, when an anisotropic conductive film is formed using conductive particles, if the aspect ratio of the protrusion is large, the resin exclusion property is increased, so that the conductivity is considered to be increased. The aspect ratio is a ratio defined by the ratio of the height H of the protrusion and the length D of the base of the protrusion, that is, H / D.
導電性粒子の表面に形成されている突起部のアスペクト比は上述のとおりであるところ、突起部の基部の長さD自体は5〜500nm、特に10〜400nmであることが好ましく、突起の高さHについては5〜500nm、特に10〜400nmであることが好ましい。 The aspect ratio of the protrusion formed on the surface of the conductive particles is as described above, and the length D of the base of the protrusion is preferably 5 to 500 nm, particularly preferably 10 to 400 nm. The length H is preferably 5 to 500 nm, particularly 10 to 400 nm.
上述のアスペクト比の測定方法は次のとおりである。電子顕微鏡によって導電性粒子を拡大観察する。1つの粒子について少なくとも1個の突起部について、その基部の長さD及び高さHを測定する。この場合、観察像において粒子の中央に存在する突起部よりも、むしろ粒子の周縁に存在する突起部を測定対象とすることが、寸法の正確な測定の点から重要である。このような測定を少なくとも20個の異なる粒子を対象として行う。このようにして得られた複数のアスペクト比のデータを算術平均し、その値をアスペクト比とする。なお、突起部の横断面は異方性が小さい形状(例えばほぼ円形)をしているので、粒子の観察角度によって突起の基部の長さDの値が変わってしまう懸念は小さい。 The above aspect ratio measurement method is as follows. The conductive particles are enlarged and observed with an electron microscope. The length D and height H of the base are measured for at least one protrusion for each particle. In this case, it is important from the viewpoint of accurate measurement of dimensions that the projections present at the periphery of the particles are measured rather than the projections present at the center of the particles in the observed image. Such a measurement is performed on at least 20 different particles. The data of a plurality of aspect ratios thus obtained are arithmetically averaged, and the value is used as the aspect ratio. In addition, since the cross section of the protrusion has a shape with small anisotropy (for example, a substantially circular shape), there is little concern that the value of the length D of the protrusion base varies depending on the observation angle of the particles.
導電性粒子の表面に形成されている突起部に関しては、高さHが50nm以上であるものが、1つの粒子当たり1〜10000個、特に2〜2000個、とりわけ2〜20個であることが、導電性粒子の導電性の更に一層の向上の点から好ましい。同様の観点から、高さHが50nm以上である突起のアスペクト比は0.3〜3.0特に0.5〜2.0、とりわけ0.5〜1.0であることが好ましい。 With respect to the protrusions formed on the surface of the conductive particles, one having a height H of 50 nm or more may be 1 to 10,000, particularly 2 to 2000, especially 2 to 20 per particle. From the viewpoint of further improving the conductivity of the conductive particles. From the same viewpoint, the aspect ratio of the protrusion having a height H of 50 nm or more is preferably 0.3 to 3.0, particularly 0.5 to 2.0, and particularly preferably 0.5 to 1.0.
導電性粒子は、更に、上層皮膜の表面に接する最外層皮膜を有していてもよい。この最外層皮膜は、貴金属からなることが好ましい。貴金属としては導電性の高い金属である金又はパラジウムを用いることが好ましく、とりわけ金を用いることが好ましい。この被覆によって、導電性粒子の導電性を一層高めることが可能になる。 The conductive particles may further have an outermost layer film in contact with the surface of the upper layer film. The outermost layer film is preferably made of a noble metal. As the noble metal, it is preferable to use gold or palladium which is a highly conductive metal, and it is particularly preferable to use gold. This coating makes it possible to further increase the conductivity of the conductive particles.
導電性皮膜が上述した構造を有する本発明の導電性粒子はその形状が球状であることが好ましい。ここでいう球状とは、前述した突起部を除いて粒子の外観を観察した場合に球状であることをいう。 The conductive particles of the present invention in which the conductive film has the above-described structure are preferably spherical in shape. The term “spherical” as used herein refers to a spherical shape when the appearance of the particles is observed except for the above-described protrusions.
導電性粒子の大きさは、導電性材料の具体的な用途に応じて適切に設定することができる。具体的には、導電性粒子はその粒径が0.5〜1000μmであることが好ましく、更に好ましくは1〜500μmであり、一層好ましくは1〜100μmである。導電性粒子の粒径は、電子顕微鏡観察によって測定することができる。 The size of the conductive particles can be appropriately set according to the specific application of the conductive material. Specifically, the conductive particles preferably have a particle size of 0.5 to 1000 μm, more preferably 1 to 500 μm, and still more preferably 1 to 100 μm. The particle size of the conductive particles can be measured by observation with an electron microscope.
次に、本発明の導電性粒子の好適な製造方法を説明する。本製造方法は、(1)芯材粒子の表面に下地皮膜を形成する第1工程と、(2)第1工程で得られた粒子に、上層皮膜を形成する第2工程の2工程に大別される。 Next, the suitable manufacturing method of the electroconductive particle of this invention is demonstrated. This production method is greatly divided into two steps: (1) a first step of forming a base coating on the surface of the core particles, and (2) a second step of forming an upper coating on the particles obtained in the first step. Separated.
第1工程においては、それに先立ち、芯材粒子の表面に貴金属を担持する前処理を行う。芯材粒子の種類に特に制限はなく、有機物及び無機物のいずれもが用いられる。下地皮膜を良好に形成するために、芯材粒子は水に分散可能なものであることが好ましい。したがって芯材粒子は、好ましくは水に実質的に不溶性のものであり、更に好ましくは酸やアルカリに対しても溶解又は変質しないものである。水に分散可能とは、攪拌等の通常の分散手段によって、下地皮膜が芯材粒子の表面に形成し得る程度に、水中に実質的に分散した懸濁体を形成し得ることをいう。 In the first step, prior to that, pretreatment for supporting a noble metal on the surface of the core material particles is performed. There is no restriction | limiting in particular in the kind of core material particle, Both organic substance and an inorganic substance are used. In order to satisfactorily form an undercoat, the core particles are preferably dispersible in water. Accordingly, the core particles are preferably substantially insoluble in water, and more preferably not dissolved or denatured in acid or alkali. “Dispersible in water” means that a suspension substantially dispersed in water can be formed to such an extent that the base film can be formed on the surface of the core material particles by ordinary dispersing means such as stirring.
芯材粒子の形状は目的とする導電性粒子の形状に大きく影響する。芯材粒子の表面を被覆する下地皮膜及び上層皮膜の厚さは薄いものなので、芯材粒子の形状がほとんどそのまま導電性粒子の形状に反映される。導電性粒子が球形であることが好ましいことは先に述べたとおりであるので、芯材粒子の形状も球形であることが好ましい。 The shape of the core particles greatly affects the shape of the target conductive particles. Since the thickness of the base coating and the upper coating covering the surface of the core particles is thin, the shape of the core particles is almost directly reflected in the shape of the conductive particles. Since it is preferable that the conductive particles have a spherical shape as described above, the shape of the core particles is also preferably a spherical shape.
芯材粒子が球形である場合、芯材粒子の粒径は目的とする導電性粒子の粒径に大きく影響する。芯材粒子の表面を被覆する下地皮膜及び上層皮膜の厚さは薄いものなので、芯材粒子の粒径が導電性粒子の粒径にほぼ反映される。この観点から、芯材粒子の粒径は、目的とする導電性粒子の粒径と同程度とすることができる。具体的には0.5〜1000μm、特に1〜500μm、とりわけ1〜100μmであることが好ましい。芯材粒子の粒径は、導電性粒子の粒径と同様の方法で測定することができる。 When the core material particles are spherical, the particle size of the core material particles greatly affects the particle size of the target conductive particles. Since the thickness of the base coating and the upper coating covering the surface of the core particle is thin, the particle size of the core particle is substantially reflected in the particle size of the conductive particles. From this viewpoint, the particle diameter of the core particles can be set to be approximately the same as the particle diameter of the target conductive particles. Specifically, it is preferably 0.5 to 1000 μm, particularly 1 to 500 μm, particularly 1 to 100 μm. The particle diameter of the core particles can be measured by the same method as that of the conductive particles.
前述の方法によって測定された芯材粒子からなる粉体の粒度分布には幅がある。一般に、粉体の粒度分布の幅は、下記式(1)で示される変動係数により表される。
変動係数(%)=(標準偏差/平均粒径)×100 (1)
この変動係数が大きいことは分布に幅があることを示し、一方、変動係数が小さいことは粒度分布がシャープであることを示す。本発明では、芯材粒子として、この変動係数が30%以下、特に20%以下、とりわけ10%以下のものを使用することが好ましい。この理由は、本発明の導電性粒子を異方性導電フィルム中の導電粒子として用いた場合に、接続に有効な寄与割合が高くなるという利点があるからである。
There is a range in the particle size distribution of the powder composed of the core material particles measured by the method described above. In general, the width of the particle size distribution of the powder is represented by a coefficient of variation represented by the following formula (1).
Coefficient of variation (%) = (standard deviation / average particle diameter) × 100 (1)
A large coefficient of variation indicates that the distribution is wide, while a small coefficient of variation indicates that the particle size distribution is sharp. In the present invention, it is preferable to use the core particles having a coefficient of variation of 30% or less, particularly 20% or less, particularly 10% or less. This is because, when the conductive particles of the present invention are used as the conductive particles in the anisotropic conductive film, there is an advantage that the effective contribution ratio for connection is increased.
芯材粒子の具体例としては、無機物として、金属(合金も含む)、ガラス、セラミックス、シリカ、カーボン、金属又は非金属の酸化物(含水物も含む)、アルミノ珪酸塩を含む金属珪酸塩、金属炭化物、金属窒化物、金属炭酸塩、金属硫酸塩、金属リン酸塩、金属硫化物、金属酸塩、金属ハロゲン化物及び炭素などが挙げられる。有機物としては、天然繊維、天然樹脂、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリスチレン、ポリブテン、ポリアミド、ポリアクリル酸エステル、ポリアクリロニトリル、ポリアセタール、アイオノマー、ポリエステルなどの熱可塑性樹脂、アルキッド樹脂、フェノール樹脂、尿素樹脂、メラミン樹脂、ベンゾグアナミン樹脂、キシレン樹脂、シリコーン樹脂、エポキシ樹脂又はジアリルフタレート樹脂などが挙げられる。これらは単独でも使用でき又は2種以上の混合物として使用してもよい。また、有機物と無機物との複合材料を用いることもできる。例としてはスチレンシリカ複合樹脂、アクリルシリカ複合樹脂などが挙げられる。 Specific examples of the core particles include, as inorganic substances, metals (including alloys), glass, ceramics, silica, carbon, metal or non-metal oxides (including hydrates), metal silicates including aluminosilicates, Examples thereof include metal carbide, metal nitride, metal carbonate, metal sulfate, metal phosphate, metal sulfide, metal acid salt, metal halide, and carbon. Organic materials include natural fibers, natural resins, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polybutene, polyamide, polyacrylate, polyacrylonitrile, polyacetal, ionomer, polyester, and other thermoplastic resins, alkyd resins, phenol resins, urea Examples of the resin include melamine resin, benzoguanamine resin, xylene resin, silicone resin, epoxy resin, and diallyl phthalate resin. These may be used alone or in a mixture of two or more. A composite material of an organic substance and an inorganic substance can also be used. Examples include styrene silica composite resin and acrylic silica composite resin.
また、芯材粒子のその他の物性は、特に制限されるものではないが、芯材粒子が樹脂粒子である場合は、下記の式(2)で定義されるKの値が、20℃において10kgf/mm2〜10000kgf/mm2の範囲であり、かつ10%圧縮変形後の回復率が20℃において1%〜100%の範囲であることが好ましい。これらの物性値を満足することで、電極どうしを圧着するときに電極を傷つけることなく、電極と十分に接触させることができるからである。 The other physical properties of the core particles are not particularly limited, but when the core particles are resin particles, the value of K defined by the following formula (2) is 10 kgf at 20 ° C. / Mm 2 to 10000 kgf / mm 2 , and the recovery rate after 10% compression deformation is preferably in the range of 1% to 100% at 20 ° C. This is because, by satisfying these physical property values, the electrodes can be sufficiently brought into contact with each other without being damaged when the electrodes are crimped together.
K値(kgf/mm2)=(3/√2)×F×S-3/2×R-1/2・・・(2)
式(2)で示されるF及びSは、微小圧縮試験機MCTM−500((株)島津製作所製)で測定したときの、それぞれ該微球体の10%圧縮変形における荷重値(kgf)及び圧縮変位(mm)であり、Rは該微球体の半径(mm)である。
K value (kgf / mm 2 ) = (3 / √2) × F × S −3/2 × R −1/2 (2)
F and S represented by the formula (2) are respectively a load value (kgf) and compression at 10% compression deformation of the microsphere when measured by a micro compression tester MCTM-500 (manufactured by Shimadzu Corporation). Displacement (mm), and R is the radius (mm) of the microsphere.
芯材粒子は、その表面が貴金属イオンの捕捉能を有するか、又は貴金属イオンの捕捉能を有するように表面改質されることが好ましい。貴金属イオンは、パラジウムや銀のイオンであることが好ましい。貴金属イオンの捕捉能を有するとは、貴金属イオンをキレート又は塩として捕捉し得ることをいう。例えば芯材粒子の表面に、アミノ基、イミノ基、アミド基、イミド基、シアノ基、水酸基、ニトリル基、カルボキシル基などが存在する場合には、該芯材粒子の表面は貴金属イオンの捕捉能を有する。貴金属イオンの捕捉能を有するように表面改質する場合には、例えば特開昭61−64882号公報記載の方法を用いることができる。 It is preferable that the surface of the core particle is modified so that the surface thereof has a precious metal ion capturing ability or a precious metal ion capturing ability. The noble metal ions are preferably palladium or silver ions. Having a precious metal ion scavenging ability means that the precious metal ion can be captured as a chelate or salt. For example, when an amino group, an imino group, an amide group, an imide group, a cyano group, a hydroxyl group, a nitrile group, a carboxyl group, or the like is present on the surface of the core particle, the surface of the core particle is capable of capturing noble metal ions. Have In the case of modifying the surface so as to have the ability to trap noble metal ions, for example, a method described in JP-A-61-64882 can be used.
このような芯材粒子を用い、その表面に貴金属を担持させる。具体的には、芯材粒子を塩化パラジウムや硝酸銀のような貴金属塩の希薄な酸性水溶液に分散させる。これによって貴金属イオンを粒子の表面に捕捉させる。貴金属塩の濃度は粒子の表面積1m2当たり1×10-7〜1×10-2モルの範囲で十分である。貴金属イオンが捕捉された芯材粒子は系から分離され水洗される。引き続き、芯材粒子を水に懸濁させ、これに還元剤を加えて貴金属イオンの還元処理を行う。これによって芯材粒子の表面に貴金属を坦持させる。還元剤は、例えば次亜リン酸ナトリウム、水酸化ホウ素ナトリウム、水素化ホウ素カリウム、ジメチルアミンボラン、ヒドラジン、ホルマリン等が用いられ、これらのうちから、目的とする下地皮膜の構成材料に基づいて選択されることが好ましい。 Using such core material particles, a noble metal is supported on the surface. Specifically, the core material particles are dispersed in a dilute acidic aqueous solution of a noble metal salt such as palladium chloride or silver nitrate. This traps noble metal ions on the surface of the particles. The concentration of the noble metal salt is sufficiently in the range of 1 × 10 −7 to 1 × 10 −2 mol per 1 m 2 of the particle surface area. The core particles in which the noble metal ions are captured are separated from the system and washed with water. Subsequently, the core material particles are suspended in water, and a reducing agent is added to the suspension so that noble metal ions are reduced. As a result, the noble metal is supported on the surface of the core particles. As the reducing agent, for example, sodium hypophosphite, sodium borohydride, potassium borohydride, dimethylamine borane, hydrazine, formalin and the like are used, and selected from these based on the constituent material of the desired undercoat It is preferred that
貴金属イオンを芯材粒子の表面に捕捉させる前に、錫イオンを粒子の表面に吸着させる感受性化処理を施してもよい。錫イオンを粒子の表面に吸着させるには、例えば表面改質処理された芯材粒子を塩化第一錫の水溶液に投入し所定時間攪拌すればよい。 Before capturing the noble metal ions on the surface of the core material particles, a sensitization treatment for adsorbing the tin ions on the surface of the particles may be performed. In order to adsorb tin ions on the surface of the particles, for example, the surface-modified core material particles may be put into an aqueous solution of stannous chloride and stirred for a predetermined time.
このようにして前処理が施された芯材粒子について、第1工程の下地皮膜形成処理を行う。以下では、下地皮膜形成処理として、(a)突起部を有する下地皮膜を形成する処理(以下、a処理ともいう)、及び(b)表面が平滑な下地皮膜を形成する処理(以下、b処理ともいう)の2種類を説明する。 The core film particles that have been pretreated in this way are subjected to a base film forming process in the first step. Hereinafter, as the undercoat film forming process, (a) a process for forming an undercoat film having a protrusion (hereinafter also referred to as a process), and (b) a process for forming a base film having a smooth surface (hereinafter referred to as b process). 2 types) are also described.
a処理としては、以下のa1工程、及びa2工程を行う。
a1工程は、芯材粒子の水性スラリーと、分散剤、ニッケル塩、還元剤及び錯化剤などを含んだ無電解ニッケルめっき浴とを混合する無電解ニッケルめっき工程である。かかるa1工程では、芯材粒子上への下地皮膜の形成と同時にめっき浴の自己分解が起こる。この自己分解は、芯材粒子の近傍で生じるため、下地皮膜の形成時に自己分解物が芯材粒子表面上に捕捉されることによって、微小突起の核が生成し、それと同時に下地皮膜の形成がなされる。生成した微小突起の核を基点として、突起部が成長する。
As a process, the following a1 process and a2 process are performed.
Step a1 is an electroless nickel plating step in which an aqueous slurry of core material particles is mixed with an electroless nickel plating bath containing a dispersant, a nickel salt, a reducing agent, a complexing agent, and the like. In the a1 step, self-decomposition of the plating bath occurs simultaneously with the formation of the base film on the core particles. Since this self-decomposition occurs in the vicinity of the core particle, the self-decomposition product is trapped on the surface of the core particle when the base film is formed, thereby generating nuclei of microprojections, and at the same time, the formation of the base film is performed. Made. A protrusion grows with the nucleus of the generated fine protrusion as a base point.
a1工程では、前述した芯材粒子を好ましくは1〜500g/L、更に好ましくは5〜300g/Lの範囲で水に十分に分散させ、水性スラリーを調製する。分散操作は、通常攪拌、高速攪拌又はコロイドミル若しくはホモジナイザーのような剪断分散装置を用いて行うことができる。また、分散操作に超音波を併用してもかまわない。必要に応じ、分散操作においては界面活性剤などの分散剤を添加する場合もある。次いで、ニッケル塩、還元剤、錯化剤及び各種添加剤などを含んだ無電解ニッケルめっき浴に、分散操作を行った芯材粒子の水性スラリーを添加し、無電解めっきa1工程を行う。 In the step a1, the above-described core material particles are preferably sufficiently dispersed in water in a range of preferably 1 to 500 g / L, more preferably 5 to 300 g / L to prepare an aqueous slurry. The dispersing operation can be usually performed using stirring, high-speed stirring, or a shearing dispersion device such as a colloid mill or a homogenizer. Further, ultrasonic waves may be used in combination with the dispersion operation. If necessary, a dispersing agent such as a surfactant may be added in the dispersing operation. Next, the aqueous slurry of the core material particles subjected to the dispersion operation is added to an electroless nickel plating bath containing a nickel salt, a reducing agent, a complexing agent, various additives, and the like, and the electroless plating a1 step is performed.
前述した分散剤としては、例えば非イオン界面活性剤、両性イオン界面活性剤及び/又は水溶性高分子が挙げられる。非イオン界面活性剤としては、ポリエチレングリコール、ポリオキシエチレンアルキルエーテル、ポリオキシエチレンアルキルフェニルエーテルなどのポリオキシアルキレンエーテル系の界面活性剤を用いることができる。両性イオン界面活性剤としては、アルキルジメチル酢酸ベタイン、アルキルジメチルカルボキシメチル酢酸ベタイン、アルキルジメチルアミノ酢酸ベタインなどのベタイン系の界面活性剤を用いることができる。水溶性高分子としては、ポリビニルアルコール、ポリビニルピロリジノン、ヒドロキシエチルセルロースなどを用いることができる。これらの分散剤は、1種又は2種以上を組み合わせて用いることができる。分散剤の使用量は、その種類にもよるが、一般に、液体(無電解ニッケルめっき浴)の体積に対して0.5〜30g/Lである。特に、分散剤の使用量が液体(無電解ニッケルめっき浴)の体積に対して1〜10g/Lの範囲であると、下地皮膜の密着性が一層向上する観点から好ましい。 Examples of the dispersant described above include nonionic surfactants, zwitterionic surfactants, and / or water-soluble polymers. As the nonionic surfactant, polyoxyalkylene ether surfactants such as polyethylene glycol, polyoxyethylene alkyl ether, polyoxyethylene alkyl phenyl ether, and the like can be used. As the zwitterionic surfactant, a betaine surfactant such as alkyldimethylacetic acid betaine, alkyldimethylcarboxymethylacetic acid betaine, and alkyldimethylaminoacetic acid betaine can be used. As the water-soluble polymer, polyvinyl alcohol, polyvinyl pyrrolidinone, hydroxyethyl cellulose and the like can be used. These dispersants can be used alone or in combination of two or more. The amount of the dispersant used is generally 0.5 to 30 g / L with respect to the volume of the liquid (electroless nickel plating bath) although it depends on the type. In particular, the amount of the dispersant used is preferably in the range of 1 to 10 g / L with respect to the volume of the liquid (electroless nickel plating bath) from the viewpoint of further improving the adhesion of the base film.
ニッケル塩としては、例えば塩化ニッケル、硫酸ニッケル又は酢酸ニッケルなどが用いられ、その濃度は0.1〜50g/Lの範囲とすることが好ましい。還元剤としては、例えば先に述べた貴金属イオンの還元に用いられているものと同様のものを用いることができ、目的とする下地皮膜の構成材料に基づいて選択される。還元剤としてリン化合物、例えば次亜リン酸ナトリウムを用いる場合、その濃度は、0.1〜50g/Lの範囲であることが好ましい。 As the nickel salt, for example, nickel chloride, nickel sulfate, nickel acetate or the like is used, and the concentration is preferably in the range of 0.1 to 50 g / L. As the reducing agent, for example, the same ones used for the reduction of the noble metal ions described above can be used, and are selected based on the target constituent material of the base film. When a phosphorus compound such as sodium hypophosphite is used as the reducing agent, the concentration is preferably in the range of 0.1 to 50 g / L.
錯化剤としては、例えばクエン酸、ヒドロキシ酢酸、酒石酸、リンゴ酸、乳酸、グルコン酸若しくはそのアルカリ金属塩やアンモニウム塩などのカルボン酸(塩)、グリシンなどのアミノ酸、エチレンジアミン、アルキルアミンなどのアミン酸、その他のアンモニウム、EDTA又はピロリン酸(塩)など、ニッケルイオンに対し錯化作用のある化合物が使用される。これらは1種を単独で又は2種以上を組み合わせて用いることができる。その濃度は好ましくは1〜100g/L、更に好ましくは5〜50g/Lの範囲である。この段階での好ましい無電解ニッケルめっき浴のpHは、4〜14の範囲である。無電解ニッケルめっき反応は、芯材粒子の水性スラリーを添加すると速やかに始まり、水素ガスの発生を伴う。無電解めっきa1工程は、その水素ガスの発生が完全に認められなくなった時点をもって終了とする。 Examples of complexing agents include citric acid, hydroxyacetic acid, tartaric acid, malic acid, lactic acid, gluconic acid or carboxylic acids (salts) such as alkali metal salts and ammonium salts thereof, amino acids such as glycine, and amines such as ethylenediamine and alkylamine. Compounds having a complexing action on nickel ions, such as acid, other ammonium, EDTA or pyrophosphoric acid (salt) are used. These can be used individually by 1 type or in combination of 2 or more types. The concentration is preferably in the range of 1 to 100 g / L, more preferably 5 to 50 g / L. The pH of the preferred electroless nickel plating bath at this stage is in the range of 4-14. The electroless nickel plating reaction starts rapidly when an aqueous slurry of core particles is added, and is accompanied by the generation of hydrogen gas. The electroless plating a1 process ends when the generation of the hydrogen gas is not completely recognized.
次いでa2工程においては、前記のa1工程に続けて、(i)ニッケル塩、還元剤及びアルカリのうちの1種を含む第1の水溶液と、残りの2種を含む第2の水溶液を用いるか、又は(ii)ニッケル塩を含む第1の水溶液と、還元剤を含む第2の水溶液と、アルカリを含む第3の水溶液とを用い、これらの水溶液をそれぞれ同時にかつ経時的に、a1工程の液に添加して無電解ニッケルめっきを行う。これらの液を添加すると再びめっき反応が始まるが、その添加量を調整することによって、形成される下地皮膜を所望の膜厚に制御することができる。無電解ニッケルめっき液の添加終了後、水素ガスの発生が完全に認められなくなってから暫く液温を保持しながら攪拌を継続して反応を完結させる。 Next, in step a2, whether (i) a first aqueous solution containing one of a nickel salt, a reducing agent and an alkali and a second aqueous solution containing the remaining two are used following the step a1. Or (ii) using a first aqueous solution containing a nickel salt, a second aqueous solution containing a reducing agent, and a third aqueous solution containing an alkali, and each of these aqueous solutions are simultaneously and over time, Add to the solution and perform electroless nickel plating. When these liquids are added, the plating reaction starts again. By adjusting the amount of addition, the base film to be formed can be controlled to a desired film thickness. After completion of the addition of the electroless nickel plating solution, the reaction is completed by continuing stirring while maintaining the solution temperature for a while after generation of hydrogen gas is not completely observed.
前記の(i)の場合には、ニッケル塩を含む第1の水溶液と、還元剤及びアルカリを含む第2の水溶液とを用いることが好ましいが、この組み合わせに限られない。この場合には、第1の水溶液には還元剤及びアルカリは含まれず、第2の水溶液にはニッケル塩は含まれない。ニッケル塩及び還元剤としては、先に述べたものを用いることができる。アルカリとしては、例えば水酸化ナトリウムや水酸化カリウム等のアルカリ金属の水酸化物を用いることができる。前記の(ii)の場合についても同様である。 In the case of (i), it is preferable to use a first aqueous solution containing a nickel salt and a second aqueous solution containing a reducing agent and an alkali, but the present invention is not limited to this combination. In this case, the first aqueous solution contains no reducing agent and alkali, and the second aqueous solution contains no nickel salt. As the nickel salt and the reducing agent, those described above can be used. As the alkali, for example, an alkali metal hydroxide such as sodium hydroxide or potassium hydroxide can be used. The same applies to the case (ii).
前記の(ii)の場合には、第1〜第3の水溶液にニッケル塩、還元剤及びアルカリがそれぞれ含まれ、かつ各水溶液には当該成分以外の他の2成分は含まれない。 In the case of (ii) above, the first to third aqueous solutions each contain a nickel salt, a reducing agent, and an alkali, and each aqueous solution contains no other two components other than the components.
(i)及び(ii)の場合のいずれであっても、水溶液中のニッケル塩の濃度は10〜1000g/L、特に50〜500g/Lであることが好ましい。還元剤の濃度は、還元剤としてリン化合物を用いる場合、100〜1000g/L、特に100〜800g/Lであることが好ましい。還元剤としてホウ素化合物を用いる場合、5〜200g/L、特に10〜100g/Lであることが好ましい。還元剤としてヒドラジン又はその誘導体を用いる場合、5〜200g/L、特に10〜100g/Lであることが好ましい。アルカリの濃度は5〜500g/L、特に10〜200g/Lであることが好ましい。 In any case of (i) and (ii), the concentration of the nickel salt in the aqueous solution is preferably 10 to 1000 g / L, particularly 50 to 500 g / L. The concentration of the reducing agent is preferably 100 to 1000 g / L, particularly 100 to 800 g / L when a phosphorus compound is used as the reducing agent. When using a boron compound as a reducing agent, it is preferable that it is 5-200 g / L, especially 10-100 g / L. When hydrazine or a derivative thereof is used as the reducing agent, it is preferably 5 to 200 g / L, particularly 10 to 100 g / L. The alkali concentration is preferably 5 to 500 g / L, more preferably 10 to 200 g / L.
a2工程は、a1工程の終了後に連続して行うが、これに代えて、a1工程とa2工程とを断続して行ってもよい。この場合には、a1工程の終了後、濾過などの方法によって芯材粒子とめっき液とを分別し、新たに芯材粒子を水に分散させて水性スラリーを調製し、そこに錯化剤を好ましくは1〜100g/L、更に好ましくは5〜50g/Lの濃度範囲で溶解した水溶液を添加し、分散剤を好ましくは0.5〜30g/L、更に好ましくは1〜10g/Lの範囲で溶解し水性スラリーを調製して、該水性スラリーに前記の各水溶液を添加するa2工程を行う方法でもよい。このようにして、目的とする突起部を有する下地皮膜が得られる。 The step a2 is continuously performed after the end of the step a1, but instead of this, the step a1 and the step a2 may be intermittently performed. In this case, after completion of the step a1, the core material particles and the plating solution are separated by a method such as filtration, and the core material particles are newly dispersed in water to prepare an aqueous slurry, and the complexing agent is added thereto. Preferably, an aqueous solution dissolved in a concentration range of 1 to 100 g / L, more preferably 5 to 50 g / L is added, and the dispersant is preferably 0.5 to 30 g / L, more preferably 1 to 10 g / L. Alternatively, a method may be used in which an aqueous slurry is prepared by dissolution in step A2 and the aqueous solution is added to the aqueous slurry. In this way, a base film having a target protrusion is obtained.
次に、a処理の代わりに、表面平滑な下地皮膜を形成する処理であるb処理を行う場合について説明する。b処理は、以下のようにして行うことができる。まず、前処理が施された芯材粒子、分散剤、錯化剤を含む水性スラリーを調製する。そして、a2工程で説明した(i)の第1の水溶液及び第2の水溶液を用いるか、又は(ii)の第1ないし第3の
水溶液を用い、これらの水溶液を水性スラリーにそれぞれを同時にかつ経時的に添加して無電解ニッケルめっきを行う。水性スラリーに各水溶液を添加してなるめっき液のpHは、例えば3〜11の範囲に調整することが好ましい。分散剤及び錯化剤の種類及びそれらの濃度については、a1工程の説明において挙げたものを、a1工程において説明した濃度で用いることができる。
Next, the case where the b process, which is a process for forming a smooth surface undercoat, is performed instead of the a process. The b process can be performed as follows. First, an aqueous slurry containing pretreated core material particles, a dispersant, and a complexing agent is prepared. Then, the first aqueous solution and the second aqueous solution (i) described in the step a2 are used, or the first to third aqueous solutions (ii) are used. Electroless nickel plating is performed by adding over time. The pH of the plating solution obtained by adding each aqueous solution to the aqueous slurry is preferably adjusted to a range of 3 to 11, for example. About the kind of dispersing agent and complexing agent, and those density | concentrations, what was mentioned in description of the a1 process can be used by the density | concentration demonstrated in the a1 process.
前記の(i)の第1及び第2の水溶液並びに(ii)の第1ないし第3の水溶液に含まれるニッケル塩、還元剤及びアルカリは、a2工程でこれらの水溶液に用いたものと同様のものを用いることができる。水溶液中のニッケル塩の濃度は10〜1000g/L、特に50〜500g/Lであることが好ましい。還元剤の濃度は、還元剤としてリン化合物を用いる場合、100〜1000g/L、特に100〜800g/Lであることが好ましい。アルカリの濃度は5〜500g/L、特に10〜200g/Lであることが好ましい。このようにして、目的とする表面平滑な下地皮膜が得られる。 The nickel salt, reducing agent and alkali contained in the first and second aqueous solutions of (i) and the first to third aqueous solutions of (ii) are the same as those used for these aqueous solutions in step a2. Things can be used. The concentration of the nickel salt in the aqueous solution is preferably 10 to 1000 g / L, particularly 50 to 500 g / L. The concentration of the reducing agent is preferably 100 to 1000 g / L, particularly 100 to 800 g / L when a phosphorus compound is used as the reducing agent. The alkali concentration is preferably 5 to 500 g / L, more preferably 10 to 200 g / L. In this way, the desired smooth surface undercoat is obtained.
以上のようにして下地皮膜が形成されたら、次に第2工程を行い、下地皮膜の表面に、突起部を有する上層皮膜を形成する。第2工程においては、第1工程で形成された下地皮膜被覆粒子と、ニッケル源、金属M源、還元剤及びヒドロキシ酸を含む無電解めっき浴とを混合する。上層皮膜に突起部を形成するために、無電解めっき浴中にヒドロキシ酸を配合する点に、第2工程の特徴の一つがある。 After the base film is formed as described above, the second step is then performed to form an upper film having protrusions on the surface of the base film. In the second step, the base coat-coated particles formed in the first step are mixed with an electroless plating bath containing a nickel source, a metal M source, a reducing agent, and a hydroxy acid. One of the features of the second step is that a hydroxy acid is blended in the electroless plating bath in order to form a protrusion on the upper layer film.
第2工程で使用する還元剤は、次亜リン酸又はその塩等のリン化合物であることが好ましく、特に次亜リン酸ナトリウムであることが好ましい。無電解めっき浴中の還元剤の濃度は、0.1〜50g/Lであることが好ましく、更に好ましくは0.5〜20g/Lである。 The reducing agent used in the second step is preferably a phosphorus compound such as hypophosphorous acid or a salt thereof, and particularly preferably sodium hypophosphite. The concentration of the reducing agent in the electroless plating bath is preferably 0.1 to 50 g / L, more preferably 0.5 to 20 g / L.
第2工程で用いられるニッケルイオンのニッケル源としては、第1工程で用いたニッケル源と同様のニッケル塩を用いることができる。無電解めっき浴中のニッケル塩の濃度は、0.1〜100g/Lであることが好ましく、更に好ましくは1〜50g/Lである。 As the nickel source of nickel ions used in the second step, the same nickel salt as the nickel source used in the first step can be used. The concentration of the nickel salt in the electroless plating bath is preferably 0.1 to 100 g / L, more preferably 1 to 50 g / L.
金属Mのイオンの金属源としては、例えば硫酸塩、硝酸塩、ナトリウム塩、塩化物、水酸化物等が用いられる。ナトリウム塩を用いる場合、その無電解めっき浴中での濃度は、0.01〜100g/Lであることが好ましく、更に好ましくは0.1〜50g/Lである。この濃度は、上層皮膜が金属Mを2種類以上含有する場合、2種類以上の金属Mの合計濃度である。 Examples of the metal source of the metal M ion include sulfates, nitrates, sodium salts, chlorides and hydroxides. When using a sodium salt, the concentration in the electroless plating bath is preferably 0.01 to 100 g / L, more preferably 0.1 to 50 g / L. This concentration is the total concentration of two or more types of metals M when the upper layer film contains two or more types of metals M.
第2工程で用いられる無電解めっき浴中に配合されるヒドロキシ酸は、上層皮膜に突起部形成する目的で用いられる。ヒドロキシ酸としては、例えばモノヒドロキシモノカルボン酸や、ジヒドロキシモノカルボン酸などを用いることができる。また、ヒドロキシ酸としては、例えばα−ヒドロキシ酸、βヒドロキシ酸、α,β−ヒドロキシ酸を用いることができる。特にヒドロキシ酸として、α−モノヒドロキシモノカルボン酸であるグリコール酸及び乳酸や、α,β−ジヒドロキシモノカルボン酸であるグリセリン酸を用いると、所望の形状を有する突起部を容易に形成し得るので好ましい。これらのヒドロキシ酸は1種を単独で又は2種以上を組み合わせて用いることができる。無電解めっき浴中でのヒドロキシ酸の濃度は、0.5〜20g/Lであることが好ましく、更に好ましくは1〜15g/Lである。 The hydroxy acid compounded in the electroless plating bath used in the second step is used for the purpose of forming protrusions on the upper film. As the hydroxy acid, for example, monohydroxy monocarboxylic acid or dihydroxy monocarboxylic acid can be used. Further, as the hydroxy acid, for example, α-hydroxy acid, β-hydroxy acid, and α, β-hydroxy acid can be used. In particular, when glycolic acid and lactic acid, which are α-monohydroxymonocarboxylic acids, or glyceric acid, which is α, β-dihydroxymonocarboxylic acid, is used as a hydroxy acid, a protrusion having a desired shape can be easily formed. preferable. These hydroxy acids can be used alone or in combination of two or more. The hydroxy acid concentration in the electroless plating bath is preferably 0.5 to 20 g / L, more preferably 1 to 15 g / L.
第2工程で用いられる無電解めっき浴には、更に錯化剤を含有させておいてもよい。錯化剤としては、a1工程の説明において挙げたものと同様のものが挙げられる。錯化剤の濃度もa1工程と同様とすることができる。 The electroless plating bath used in the second step may further contain a complexing agent. Examples of the complexing agent include the same ones as mentioned in the description of the step a1. The concentration of the complexing agent can be the same as in step a1.
第2工程で用いられる無電解めっき浴のpHは、3〜11に維持されることが好ましく、更に好ましくは4〜10である。 The pH of the electroless plating bath used in the second step is preferably maintained at 3 to 11, and more preferably 4 to 10.
下地皮膜被覆粒子と無電解めっき浴とを混合する方法に特に制限はない。例えば無電解めっき浴を、ニッケルイオンの還元が可能な温度に加熱しておき、その状態下に、下地皮膜被覆粒子を無電解めっき浴中に投入することができる。この操作によって、ニッケルイオンが還元し、還元によって生じたニッケルが、下地粒子の表面に突起部を有する上層皮膜を形成する。 There is no particular limitation on the method of mixing the undercoat-coated particles and the electroless plating bath. For example, the electroless plating bath can be heated to a temperature at which nickel ions can be reduced, and the undercoat-coated particles can be put into the electroless plating bath under this condition. By this operation, nickel ions are reduced, and the nickel produced by the reduction forms an upper film having protrusions on the surface of the base particles.
このようにして目的とする導電性粒子が得られる。この導電性粒子は、必要に応じ、更に最外層皮膜を形成するための後処理に付すことができる。後処理としては、例えば無電解金めっき工程あるいは無電解パラジウムめっき工程が挙げられる。この工程に付すことによって、導電性粒子の表面に最外層皮膜として、金めっき層あるいはパラジウムめっき層が形成される。金めっき層の形成は、従来公知の無電解めっき法に従い行うことができる。例えば、導電性粒子の水性懸濁体に、エチレンジアミン四酢酸四ナトリウム、クエン酸二ナトリウム及びシアン化金カリウムを含み、水酸化ナトリウムでpHが調整された無電解めっき液を添加することで、金めっき層を形成することができる。 In this way, desired conductive particles are obtained. The conductive particles can be further subjected to post-treatment for forming an outermost layer film as necessary. Examples of the post-treatment include an electroless gold plating step or an electroless palladium plating step. By applying this step, a gold plating layer or a palladium plating layer is formed as the outermost layer film on the surface of the conductive particles. The gold plating layer can be formed according to a conventionally known electroless plating method. For example, by adding an electroless plating solution containing tetrasodium ethylenediaminetetraacetate, disodium citrate, and potassium gold cyanide and adjusted to pH with sodium hydroxide to an aqueous suspension of conductive particles, A plating layer can be formed.
パラジウムめっき層の形成も、従来公知の無電解めっき法に従い行うことができる。例えば、導電性粒子の水性懸濁液に、塩化パラジウム等の水溶性パラジウム化合物;次亜リン酸、亜リン酸、ギ酸、酢酸、ヒドラジン、水素化ホウ素、アミンボラン化合物、又はこれらの塩等の還元剤;及び錯化剤等を含有する常用の無電解パラジウムめっき液を加え、更に必要に応じて分散剤、安定剤、pH緩衝剤を加える。そして、塩酸や硫酸等の酸あるいは水酸化ナトリウム等の塩基でpHを調整しつつ、還元型無電解めっきを行い、パラジウムめっき層を形成することができる。別法として、導電性粒子の水性懸濁液に、テトラアンミンパラジウム塩等のパラジウムイオン源、錯化剤及び必要により分散剤を添加し、パラジウムイオンとニッケルイオンとの置換反応を利用して、置換型無電解めっきを行い、パラジウムめっき層を形成してもよい。 The palladium plating layer can also be formed according to a conventionally known electroless plating method. For example, reduction of water-soluble palladium compounds such as palladium chloride; hypophosphorous acid, phosphorous acid, formic acid, acetic acid, hydrazine, borohydride, amine borane compounds, or salts thereof into an aqueous suspension of conductive particles A conventional electroless palladium plating solution containing an agent; and a complexing agent, and a dispersant, a stabilizer, and a pH buffering agent are added as necessary. Then, while adjusting the pH with an acid such as hydrochloric acid or sulfuric acid or a base such as sodium hydroxide, reduction type electroless plating can be performed to form a palladium plating layer. Alternatively, a palladium ion source such as tetraamminepalladium salt, a complexing agent and, if necessary, a dispersing agent are added to an aqueous suspension of conductive particles, and substitution is performed using a substitution reaction between palladium ions and nickel ions. A palladium electroplating layer may be formed by performing mold electroless plating.
還元型無電解めっき又は置換型無電解めっきで用いる分散剤としては、前述のa1工程で例示した分散剤と同様ものを用いることができる。また、常用の無電解パラジウムめっき液として、例えば、小島化学薬品株式会社、日本カニゼン株式会社、中央化学産業株式会社等から入手可能な市販品を使用してもよい。 As the dispersant used in the reduction type electroless plating or the displacement type electroless plating, the same dispersants as those exemplified in the aforementioned a1 step can be used. In addition, as a conventional electroless palladium plating solution, for example, a commercially available product available from Kojima Chemical Co., Ltd., Nippon Kanisen Co., Ltd., Chuo Chemical Industrial Co., Ltd. or the like may be used.
別の後処理として、導電性粒子をボールミル等のメディアミルを用いた粉砕工程に付すこともできる。この粉砕工程に付すことによって、導電性粒子からなる粉体の質量に対する一次粒子が占める質量を、容易に更に向上させることができる。 As another post-treatment, the conductive particles can be subjected to a pulverization step using a media mill such as a ball mill. By attaching | subjecting to this grinding | pulverization process, the mass which the primary particle occupies with respect to the mass of the powder which consists of electroconductive particles can be further improved further easily.
本発明の導電性粒子は、後述するように導電性接着剤の導電性フィラーとして用いる場合に、導電性粒子間のショートの発生を防止するため、その表面を更に絶縁性樹脂で被覆することができる。絶縁性樹脂の被覆は、圧力等を加えない状態では導電性粒子の表面が極力露出しないように、かつ導電性接着剤を用いて2枚の電極を接着する際に加えられる熱及び圧力によって破壊され、導電性粒子の表面のうち少なくとも突起が露出するように形成される。絶縁樹脂の厚さは0.1〜0.5μm程度とすることができる。絶縁樹脂は導電性粒子の表面全体を覆っていてもよいし、導電性粒子の表面の一部を覆っているだけでもよい。 When the conductive particles of the present invention are used as a conductive filler of a conductive adhesive, as will be described later, the surface of the conductive particles may be further coated with an insulating resin in order to prevent short-circuiting between the conductive particles. it can. Insulating resin coating is destroyed by heat and pressure applied when two electrodes are bonded using a conductive adhesive so that the surface of the conductive particles is not exposed as much as possible without applying pressure. And at least the protrusions of the surface of the conductive particles are exposed. The thickness of the insulating resin can be about 0.1 to 0.5 μm. The insulating resin may cover the entire surface of the conductive particles, or may cover only a part of the surface of the conductive particles.
絶縁樹脂としては、当該技術分野で公知のものを広く用いることができる。その一例を示せば、フェノール樹脂、ユリア樹脂、メラミン樹脂、アリル樹脂、フラン樹脂、ポリエステル樹脂、エポキシ樹脂、シリコーン樹脂、ポリアミド−イミド樹脂、ポリイミド樹脂、ポリウレタン樹脂、フッ素樹脂、ポリオレフィン樹脂(例:ポリエチレン、ポリプロピレン、ポリブチレン)、ポリアルキル(メタ)アクリレート樹脂、ポリ(メタ)アクリル酸樹脂、ポリスチレン樹脂、アクリロニトリル−スチレン−ブタジエン樹脂、ビニル樹脂、ポリアミド樹脂、ポリカーボネート樹脂、ポリアセタール樹脂、アイオノマー樹脂、ポリエーテルスルホン樹脂、ポリフェニルオキシド樹脂、ポリスルホン樹脂、ポリフッ化ビニリデン樹脂、エチルセルロース及び酢酸セルロースを挙げることができる。 As the insulating resin, those known in the technical field can be widely used. For example, phenol resin, urea resin, melamine resin, allyl resin, furan resin, polyester resin, epoxy resin, silicone resin, polyamide-imide resin, polyimide resin, polyurethane resin, fluorine resin, polyolefin resin (example: polyethylene) , Polypropylene, polybutylene), polyalkyl (meth) acrylate resin, poly (meth) acrylic acid resin, polystyrene resin, acrylonitrile-styrene-butadiene resin, vinyl resin, polyamide resin, polycarbonate resin, polyacetal resin, ionomer resin, polyethersulfone Mention may be made of resins, polyphenyl oxide resins, polysulfone resins, polyvinylidene fluoride resins, ethyl cellulose and cellulose acetate.
導電性粒子の表面に絶縁被覆層を形成する方法としては、コアセルベーション法、界面重合法、in situ重合法及び液中硬化被覆法等の化学的方法、スプレードライング法、気中懸濁被覆法、真空蒸着被覆法、ドライブレンド法、ハイブリダイゼーション法、静電的合体法、融解分散冷却法及び無機質カプセル化法等の物理機械的方法、界面沈澱法等の物理化学的方法が挙げられる。 As methods for forming an insulating coating layer on the surface of conductive particles, chemical methods such as coacervation method, interfacial polymerization method, in situ polymerization method and liquid curing coating method, spray drying method, air suspension coating And physical-chemical methods such as interfacial precipitation method, and physical-mechanical methods such as method, vacuum deposition coating method, dry blend method, hybridization method, electrostatic coalescence method, melt dispersion cooling method and inorganic encapsulation method.
このようにして得られた本発明の導電性粒子は、例えば異方性導電フィルム(ACF)やヒートシールコネクタ(HSC)、液晶ディスプレーパネルの電極を駆動用LSIチップの回路基板へ接続するための導電材料などとして好適に使用される。特に、本発明の導電性粒子は、導電性接着剤の導電性フィラーとして好適に用いられる。 The conductive particles of the present invention thus obtained are used for connecting, for example, an anisotropic conductive film (ACF), a heat seal connector (HSC), and an electrode of a liquid crystal display panel to a circuit board of a driving LSI chip. It is suitably used as a conductive material. In particular, the conductive particles of the present invention are suitably used as a conductive filler of a conductive adhesive.
前記の導電性接着剤は、導電性基材が形成された2枚の基板間に配置され、加熱加圧によって前記導電性基材を接着して導通する異方導電性接着剤として好ましく用いられる。この異方導電性接着剤は、本発明の導電性粒子と接着剤樹脂とを含む。接着剤樹脂としては、絶縁性で、かつ接着剤樹脂として用いられているものであれば、特に制限なく使用できる。熱可塑性樹脂及び熱硬化性のいずれであってもよく、加熱によって接着性能が発現するものが好ましい。そのような接着剤樹脂には、例えば熱可塑性タイプ、熱硬化性タイプ、紫外線硬化タイプ等がある。また、熱可塑性タイプと熱硬化性タイプとの中間的な性質を示す、いわゆる半熱硬化性タイプ、熱硬化性タイプと紫外線硬化タイプとの複合タイプ等がある。これらの接着剤樹脂は被着対象である回路基板等の表面特性や使用形態に合わせて適宜選択できる。特に、熱硬化性樹脂を含んで構成される接着剤樹脂が、接着後の材料的強度に優れる点から好ましい。 The conductive adhesive is preferably used as an anisotropic conductive adhesive that is disposed between two substrates on which a conductive base material is formed, and adheres and conducts the conductive base material by heating and pressing. . This anisotropic conductive adhesive contains the conductive particles of the present invention and an adhesive resin. Any adhesive resin can be used without particular limitation as long as it is insulative and used as an adhesive resin. Either a thermoplastic resin or a thermosetting resin may be used, and those that exhibit adhesive performance by heating are preferred. Examples of such an adhesive resin include a thermoplastic type, a thermosetting type, and an ultraviolet curing type. In addition, there are so-called semi-thermosetting types that exhibit intermediate properties between thermoplastic types and thermosetting types, combined types of thermosetting types and ultraviolet curing types, and the like. These adhesive resins can be appropriately selected according to the surface characteristics and usage pattern of the circuit board or the like to be attached. In particular, an adhesive resin including a thermosetting resin is preferable from the viewpoint of excellent material strength after bonding.
接着剤樹脂としては、具体的には、エチレン−酢酸ビニル共重合体、カルボキシル変性エチレン−酢酸ビニル共重合体、エチレン−イソブチルアクリレート共重合体、ポリアミド、ポリイミド、ポリエステル、ポリビニルエーテル、ポリビニルブチラール、ポリウレタン、SBSブロック共重合体、カルボキシル変性SBS共重合体、SIS共重合体、SEBS共重合体、マレイン酸変性SEBS共重合体、ポリブタジエンゴム、クロロプレンゴム、カルボキシル変性クロロプレンゴム、スチレン−ブタジエンゴム、イソブチレン−イソプレン共重合体、アクリロニトリル−ブタジエンゴム(以下、NBRと表す。)、カルボキシル変性NBR、アミン変性NBR、エポキシ樹脂、エポキシエステル樹脂、アクリル樹脂、フェノール樹脂又はシリコーン樹脂などから選ばれる1種又は2種以上の組み合わせにより得られるものを主剤として調製されたものが挙げられる。これらのうち、熱可塑性樹脂としては、スチレン−ブタジエンゴムやSEBSなどがリワーク性に優れるので好ましい。熱硬化性樹脂としては、エポキシ樹脂が好ましい。これらのうち接着力が高く、耐熱性、電気絶縁性に優れ、しかも溶融粘度が低く、低圧力で接続が可能であるという利点から、エポキシ樹脂が最も好ましい。 Specific examples of the adhesive resin include ethylene-vinyl acetate copolymer, carboxyl-modified ethylene-vinyl acetate copolymer, ethylene-isobutyl acrylate copolymer, polyamide, polyimide, polyester, polyvinyl ether, polyvinyl butyral, and polyurethane. , SBS block copolymer, carboxyl-modified SBS copolymer, SIS copolymer, SEBS copolymer, maleic acid-modified SEBS copolymer, polybutadiene rubber, chloroprene rubber, carboxyl-modified chloroprene rubber, styrene-butadiene rubber, isobutylene- Isoprene copolymer, acrylonitrile-butadiene rubber (hereinafter referred to as NBR), carboxyl-modified NBR, amine-modified NBR, epoxy resin, epoxy ester resin, acrylic resin, phenol resin or Those obtained by one or more combinations selected from such recone resins those prepared as main agent. Of these, as the thermoplastic resin, styrene-butadiene rubber, SEBS, and the like are preferable because of their excellent reworkability. As the thermosetting resin, an epoxy resin is preferable. Of these, epoxy resins are most preferred because of their advantages of high adhesive strength, excellent heat resistance and electrical insulation, low melt viscosity, and connection at low pressure.
前記のエポキシ樹脂としては、1分子中に2個以上のエポキシ基を有する多価エポキシ樹脂であれば、一般に用いられているエポキシ樹脂が使用可能である。具体的なものとしては、フェノールノボラック、クレゾールノボラック等のノボラック樹脂、ビスフェノールA、ビスフェノールF、ビスフェノールAD、レゾルシン、ビスヒドロキシジフェニルエーテル等の多価フェノール類、エチレングリコール、ネオペンチルグリコール、グリセリン、トリメチロールプロパン、ポリプロピレングリコール等の多価アルコール類、エチレンジアミン、トリエチレンテトラミン、アニリン等のポリアミノ化合物、アジピン酸、フタル酸、イソフタル酸等の多価カルボキシ化合物等とエピクロルヒドリン又は2−メチルエピクロルヒドリンを反応させて得られるグリシジル型のエポキシ樹脂が例示される。また、ジシクロペンタジエンエポキサイド、ブタジエンダイマージエポキサイド等の脂肪族及び脂環族エポキシ樹脂等が挙げられる。これらは1種を単独で又は2種以上混合して使用することができる。 As the epoxy resin, a generally used epoxy resin can be used as long as it is a polyvalent epoxy resin having two or more epoxy groups in one molecule. Specific examples include novolak resins such as phenol novolak and cresol novolak, polyhydric phenols such as bisphenol A, bisphenol F, bisphenol AD, resorcin, and bishydroxydiphenyl ether, ethylene glycol, neopentyl glycol, glycerin, and trimethylolpropane. Obtained by reacting polychlorohydric alcohols such as polypropylene glycol, polyamino compounds such as ethylenediamine, triethylenetetramine, and aniline, polycarboxyl compounds such as adipic acid, phthalic acid, and isophthalic acid with epichlorohydrin or 2-methylepichlorohydrin. A glycidyl type epoxy resin is exemplified. Moreover, aliphatic and alicyclic epoxy resins such as dicyclopentadiene epoxide and butadiene dimer epoxide are listed. These can be used individually by 1 type or in mixture of 2 or more types.
なお、上述した各種の接着樹脂としては、不純物イオン(NaやCl等)や加水分解性塩素などが低減された高純度品を用いることが、イオンマイグレーションの防止の観点から好ましい。 In addition, as various adhesive resin mentioned above, it is preferable from a viewpoint of prevention of ion migration to use the high purity goods in which impurity ions (Na, Cl, etc.), hydrolyzable chlorine, etc. were reduced.
異方導電性接着剤における本発明の導電性粒子の使用量は、接着剤樹脂成分100質量部に対し通常0.1〜30質量部、好ましくは0.5〜25質量部、より好ましくは1〜20質量部である。導電性粒子の使用量がこの範囲内にあることにより、接続抵抗や溶融粘度が高くなることが抑制され、接続信頼性を向上させ、接続の異方性を十分に確保することができる。 The amount of the conductive particles of the present invention used in the anisotropic conductive adhesive is usually 0.1 to 30 parts by weight, preferably 0.5 to 25 parts by weight, more preferably 1 to 100 parts by weight of the adhesive resin component. ˜20 parts by mass. When the amount of the conductive particles used is within this range, an increase in connection resistance and melt viscosity is suppressed, connection reliability is improved, and connection anisotropy can be sufficiently secured.
前記の異方導電性接着剤には、上述した導電性粒子及び接着剤樹脂の他に、当該技術分野において、公知の添加剤を配合することができる。その配合量も当該技術分野において公知の範囲内とすることができる。他の添加剤としては、例えば粘着付与剤、反応性助剤、エポキシ樹脂硬化剤、金属酸化物、光開始剤、増感剤、硬化剤、加硫剤、劣化防止剤、耐熱添加剤、熱伝導向上剤、軟化剤、着色剤、各種カップリング剤又は金属不活性剤などを例示することができる。 In the anisotropic conductive adhesive, in addition to the conductive particles and the adhesive resin described above, additives known in the art can be blended. The blending amount can also be within a range known in the art. Other additives include, for example, tackifiers, reactive auxiliaries, epoxy resin curing agents, metal oxides, photoinitiators, sensitizers, curing agents, vulcanizing agents, deterioration inhibitors, heat resistant additives, heat Examples thereof include a conductivity improver, a softener, a colorant, various coupling agents, or a metal deactivator.
粘着付与剤としては、例えばロジン、ロジン誘導体、テルペン樹脂、テルペンフェノール樹脂、石油樹脂、クマロン−インデン樹脂、スチレン系樹脂、イソプレン系樹脂、アルキルフェノール樹脂、キシレン樹脂などが挙げられる。反応性助剤すなわち架橋剤としては、例えばポリオール、イソシアネート類、メラミン樹脂、尿素樹脂、ウトロピン類、アミン類、酸無水物、過酸化物などが挙げられる。エポキシ樹脂硬化剤としては、1分子中に2個以上の活性水素を有するものであれば特に制限なく使用できる。具体的なものとしては、例えばジエチレントリアミン、トリエチレンテトラミン、メタフェニレンジアミン、ジシアンジアミド、ポリアミドアミン等のポリアミノ化合物;無水フタル酸、無水メチルナジック酸、ヘキサヒドロ無水フタル酸、無水ピロメリット酸等の有機酸無水物;フェノールノボラック、クレゾールノボラック等のノボラック樹脂等が挙げられる。これらは1種を単独で又は2種以上混合して使用することができる。また、必要に応じて潜在性硬化剤を用いてもよい。使用できる潜在性硬化剤としては、例えば、イミダゾール系、ヒドラジド系、三フッ化ホウ素−アミン錯体、スルホニウム塩、アミンイミド、ポリアミンの塩、ジシアンジアミド等及びこれらの変性物が挙げられる。これらは1種を単独で又は2種以上の混合体として使用できる。 Examples of the tackifier include rosin, rosin derivatives, terpene resins, terpene phenol resins, petroleum resins, coumarone-indene resins, styrene resins, isoprene resins, alkylphenol resins, xylene resins and the like. Examples of the reactive assistant, that is, the crosslinking agent include polyols, isocyanates, melamine resins, urea resins, utropines, amines, acid anhydrides and peroxides. As an epoxy resin hardening | curing agent, if it has two or more active hydrogens in 1 molecule, it can be especially used without a restriction | limiting. Specific examples include polyamino compounds such as diethylenetriamine, triethylenetetramine, metaphenylenediamine, dicyandiamide, and polyamideamine; organic acid anhydrides such as phthalic anhydride, methyl nadic anhydride, hexahydrophthalic anhydride, and pyromellitic anhydride. Products: novolak resins such as phenol novolac and cresol novolak. These can be used individually by 1 type or in mixture of 2 or more types. Moreover, you may use a latent hardening | curing agent as needed. Examples of latent curing agents that can be used include imidazole series, hydrazide series, boron trifluoride-amine complexes, sulfonium salts, amine imides, polyamine salts, dicyandiamide, and the like and modified products thereof. These can be used alone or as a mixture of two or more.
前記の異方導電性接着剤は、当該技術分野において通常使用されている製造装置を用い製造される。例えば、本発明の導電性粒子及び接着剤樹脂並びに必要に応じ硬化剤や各種添加剤を配合し、接着剤樹脂が熱硬化性樹脂の場合は有機溶媒中で混合することにより、熱可塑性樹脂の場合は接着剤樹脂の軟化点以上の温度で、具体的には好ましくは約50〜130℃程度、更に好ましくは約60〜110℃程度で溶融混練することにより製造される。このようにして得られた異方導電性接着剤は、塗布してもよいし、フィルム状にして適用してもよい。 The anisotropic conductive adhesive is manufactured using a manufacturing apparatus usually used in the technical field. For example, the conductive particles of the present invention, an adhesive resin, and a curing agent or various additives as necessary are blended. When the adhesive resin is a thermosetting resin, the thermoplastic resin is mixed in an organic solvent. In this case, it is produced by melt-kneading at a temperature equal to or higher than the softening point of the adhesive resin, specifically preferably about 50 to 130 ° C, more preferably about 60 to 110 ° C. The anisotropic conductive adhesive thus obtained may be applied or applied in the form of a film.
以下、実施例により本発明を更に詳細に説明する。しかしながら本発明の範囲は、かかる実施例に制限されない。特に断らない限り「%」及び「部」はそれぞれ「質量%」及び「質量部」を意味する。 Hereinafter, the present invention will be described in more detail with reference to examples. However, the scope of the present invention is not limited to such examples. Unless otherwise specified, “%” and “part” mean “% by mass” and “part by mass”, respectively.
〔実施例1〕
(1)第1工程
(1−1)前処理
平均粒径3.0μmの球状スチレン系樹脂を芯材粒子として用いた。その9gを、400mLのコンディショナー水溶液(ローム・アンド・ハース電子材料製の「クリーナーコンディショナー231」)に攪拌しながら投入した。コンディショナー水溶液の濃度は40mL/Lであった。引き続き、液温60℃で超音波を与えながら30分間攪拌して芯材粒子の表面改質及び分散処理を行った。水溶液を濾過し、一回リパルプ水洗した芯材粒子を200mLのスラリーにした。このスラリーへ塩化第一錫水溶液200mLを投入した。この水溶液の濃度は5×10-3mol/Lであった。常温で5分攪拌し、錫イオンを芯材粒子の表面に吸着させる感受性化処理を行った。引き続き水溶液を濾過し、1回リパルプ水洗した。次いで芯材粒子を400mLのスラリーにし、60℃に維持した。超音波を併用してスラリーを攪拌しながら、0.11mol/Lの塩化パラジウム水溶液2mLを添加した。そのままの攪拌状態を5分間維持させ、芯材粒子の表面にパラジウムイオンを捕捉させる活性化処理を行った。
[Example 1]
(1) First Step (1-1) Pretreatment A spherical styrene resin having an average particle size of 3.0 μm was used as the core material particles. 9 g of the solution was added to 400 mL of an aqueous conditioner solution (“Cleaner Conditioner 231” manufactured by Rohm and Haas Electronic Materials) with stirring. The concentration of the aqueous conditioner solution was 40 mL / L. Subsequently, the core material particles were surface-modified and dispersed by stirring for 30 minutes while applying ultrasonic waves at a liquid temperature of 60 ° C. The aqueous solution was filtered and the core particles washed once with repulp water were made into 200 mL slurry. 200 mL of stannous chloride aqueous solution was thrown into this slurry. The concentration of this aqueous solution was 5 × 10 −3 mol / L. The mixture was stirred at room temperature for 5 minutes to carry out a sensitization treatment for adsorbing tin ions on the surface of the core material particles. Subsequently, the aqueous solution was filtered and washed once with repulp water. The core particles were then made into 400 mL slurry and maintained at 60 ° C. While stirring the slurry using ultrasonic waves, 2 mL of a 0.11 mol / L palladium chloride aqueous solution was added. The state of stirring as it was was maintained for 5 minutes, and an activation treatment for capturing palladium ions on the surface of the core particles was performed.
(1−2)突起部を有する下地皮膜形成処理
(1−2−1)a1工程
20g/Lの酒石酸ナトリウム、4.5g/Lの硫酸ニッケル六水和物、5.4g/Lの次亜リン酸ナトリウム、及び5g/Lのポリエチレングリコールを溶解した水溶液からなる無電解ニッケル−リンめっき浴3Lを70℃に昇温し、この無電解めっき浴に、パラジウムを担持した芯材粒子9gを投入し、a1工程を開始した。5分間攪拌し水素の発泡が停止するのを確認し、a1工程を完了させた。
(1-2) Base film forming treatment having protrusions (1-2-1) a1 step 20 g / L sodium tartrate, 4.5 g / L nickel sulfate hexahydrate, 5.4 g / L hypochlorous acid 3 L of an electroless nickel-phosphorous plating bath made of an aqueous solution in which sodium phosphate and 5 g / L polyethylene glycol are dissolved is heated to 70 ° C., and 9 g of core material particles supporting palladium are put into this electroless plating bath. Then, step a1 was started. After stirring for 5 minutes, it was confirmed that hydrogen bubbling stopped, and step a1 was completed.
(1−2−2)a2工程
224g/Lの硫酸ニッケル水溶液(第1の水溶液)と、210g/Lの次亜リン酸ナトリウム及び80g/Lの水酸化ナトリウムを含む混合水溶液(第2の水溶液)とをそれぞれ300mL用い、これらをa1工程で得られた芯材粒子のスラリーに、定量ポンプによって連続的に分別添加し、無電解めっきa2工程を開始した。添加速度はいずれも2.5mL/分とした。液を全量添加した後、70℃の温度を保持しながら5分攪拌を継続した。次いで液を濾過し、濾過物を3回洗浄した後、100℃の真空乾燥機で乾燥して、ニッケル−リン合金からなる下地皮膜が形成された下地皮膜被覆粒子を得た。この下地被膜の膜厚を下記の方法で求めた結果、100nmであった。
(1-2-2) Step a2 Mixed aqueous solution (second aqueous solution) containing 224 g / L nickel sulfate aqueous solution (first aqueous solution), 210 g / L sodium hypophosphite and 80 g / L sodium hydroxide ) And 300 mL of each of these was continuously added to the slurry of the core material particles obtained in the a1 step by a metering pump, and the electroless plating a2 step was started. The addition rate was 2.5 mL / min. After all the liquid was added, stirring was continued for 5 minutes while maintaining the temperature at 70 ° C. Next, the liquid was filtered, and the filtrate was washed three times, and then dried with a vacuum dryer at 100 ° C. to obtain base coat coated particles on which a base coat made of a nickel-phosphorus alloy was formed. As a result of obtaining the film thickness of the undercoat film by the following method, it was 100 nm.
〔下地皮膜の厚さの測定方法〕
上層皮膜被覆前の下地皮膜被覆粒子を王水に浸漬して下地皮膜を溶解し、下地皮膜成分をICP又は化学分析し、以下の式(3)、(4)から下地皮膜の厚さ(μm)を算出した。この方法で得られた値は計算値であり、下地皮膜に突起部が形成されている場合には、仮想的に該突起部を平らにならした場合の厚みを意味する。
J=[(r+t)3―r3]d1/r3d2 (3)
J=W/(100−W) (4)
式中、rは芯材粒子の半径(μm)、tは下地皮膜の厚さ(μm)、d1は下地皮膜の密度(g/μm3)、d2は芯材粒子の密度(g/μm3)、Wは下地被膜被覆粒子におけるニッケル及びリンの含有率の合計(質量%)、Jは芯材粒子に対する下地皮膜の質量比である。
[Measurement method of thickness of undercoat]
The base coat particles before coating the top coat are immersed in aqua regia to dissolve the base coat, and the base coat components are analyzed by ICP or chemical analysis. From the following formulas (3) and (4), the thickness of the base coat (μm ) Was calculated. The value obtained by this method is a calculated value, and when a protrusion is formed on the base film, it means the thickness when the protrusion is virtually flattened.
J = [(r + t) 3 −r 3 ] d 1 / r 3 d 2 (3)
J = W / (100-W) (4)
In the formula, r is the radius of the core particle (μm), t is the thickness of the undercoat (μm), d 1 is the density of the undercoat (g / μm 3 ), and d 2 is the density of the core particles (g / μm 3 ), W is the total content (% by mass) of nickel and phosphorus in the undercoat-coated particles, and J is the mass ratio of the undercoat to the core particles.
(2)第2工程(突起部を有する上層皮膜形成処理)
20g/Lのクエン酸ナトリウム、2.5g/Lの硫酸ニッケル、0.5g/Lのタングステン酸ナトリウム、5.0g/Lのグリコール酸、及び2.7g/Lの次亜リン酸ナトリウムからなる無電解ニッケル−タングステン−リンめっき浴を調製した。このめっき浴1Lを80℃に加熱した後pHを9に調整し、これを攪拌しながら第1工程で得られた下地皮膜被覆粒子を6g投入して無電解めっきを行った。めっき時間は30分とした。これによって下地皮膜の表面に無電解めっき処理を行った。処理完了後、液をろ別し、3回洗浄後、110℃で真空乾燥させ、ニッケル−リン合金皮膜からなる下地皮膜上にニッケル−タングステン−リン合金からなる上層皮膜を被覆した導電性粒子を得た。上層皮膜の膜厚を下記の方法で測定した結果、25nmであった。
(2) Second step (upper layer film forming process having protrusions)
Consists of 20 g / L sodium citrate, 2.5 g / L nickel sulfate, 0.5 g / L sodium tungstate, 5.0 g / L glycolic acid, and 2.7 g / L sodium hypophosphite An electroless nickel-tungsten-phosphorous plating bath was prepared. After heating 1 L of this plating bath to 80 ° C., the pH was adjusted to 9, 6 g of the undercoat-coated particles obtained in the first step were added while stirring this, and electroless plating was performed. The plating time was 30 minutes. As a result, the surface of the base film was subjected to electroless plating. After the treatment is completed, the liquid is filtered off, washed three times, and then vacuum-dried at 110 ° C. Conductive particles in which an upper layer film made of a nickel-tungsten-phosphorus alloy is coated on a base film made of a nickel-phosphorus alloy film Obtained. It was 25 nm as a result of measuring the film thickness of an upper film by the following method.
〔上層皮膜の厚さの測定方法〕
導電性粒子を王水に浸漬して全皮膜を溶解し、全皮膜成分をICP又は化学分析し、以下の式(5)、(6)から全皮膜の厚さ(μm)を算出した。
J’=[(r+t’)3―r3]d1/r3d2 (5)
J’=W’/(100−W’) (6)
式中、rは芯材粒子の半径(μm)、t’は全皮膜の厚さ(μm)、d1は全皮膜の密度(g/μm3)、d2は芯材粒子の密度(g/μm3)、W’は導電性粒子におけるニッケル、タングステン、モリブデン及びリンの含有率の合計(質量%)、J’は芯材粒子に対する全皮膜の質量比である。
上層皮膜の厚さT(μm)は、全皮膜の厚さt’ (μm)と下地皮膜の厚さt(μm)とを用いて以下の式(7)により算出した。この方法で得られた値は計算値であり、上層被膜に突起が形成されている場合には、仮想的に該突起を平らにならした場合の厚みを意味する。
T=t’―t (7)
[Measurement method of upper layer thickness]
The conductive particles were immersed in aqua regia to dissolve the entire coating, and all coating components were analyzed by ICP or chemical analysis, and the thickness (μm) of the entire coating was calculated from the following formulas (5) and (6).
J ′ = [(r + t ′) 3 −r 3 ] d 1 / r 3 d 2 (5)
J ′ = W ′ / (100−W ′) (6)
In the formula, r is the radius of the core particles (μm), t ′ is the thickness of the entire coating (μm), d 1 is the density of the total coating (g / μm 3 ), and d 2 is the density of the core particles (g / Μm 3 ), W ′ is the total content (% by mass) of nickel, tungsten, molybdenum and phosphorus in the conductive particles, and J ′ is the mass ratio of the entire coating to the core particles.
The thickness T (μm) of the upper film was calculated by the following equation (7) using the thickness t ′ (μm) of the entire film and the thickness t (μm) of the base film. The value obtained by this method is a calculated value, and when a protrusion is formed on the upper layer film, it means the thickness when the protrusion is virtually flattened.
T = t′−t (7)
〔実施例2ないし14〕
以下の表1に示す条件を採用する以外は実施例1と同様にして導電性粒子を得た。得られた導電性粒子は、実施例1の導電性粒子と同様に、下地皮膜及び上層皮膜の双方に突起部を有するものであった。
[Examples 2 to 14]
Conductive particles were obtained in the same manner as in Example 1 except that the conditions shown in Table 1 below were adopted. The obtained conductive particles had protrusions on both the base film and the upper film similarly to the conductive particles of Example 1.
〔実施例15〕
(1)第1工程
(1−1)前処理
実施例1と同様に行った。
Example 15
(1) 1st process (1-1) Pre-processing It carried out similarly to Example 1. FIG.
(1−2)略均一な厚みを有する下地皮膜形成処理
224g/Lの硫酸ニッケル水溶液(第1の水溶液)と、210g/Lの次亜リン酸ナトリウム及び80g/Lの水酸化ナトリウムを含む混合水溶液(第2の水溶液)とをそれぞれ300mL用いた。これらを、前処理した芯材粒子のスラリーに、定量ポンプによって連続的に分別添加し、無電解めっき工程を開始した。添加速度はいずれも2.5mL/分とした。液を全量添加した後、70℃の温度を保持しながら5分攪拌を継続した。次いで液を濾過し、濾過物を3回洗浄した後、100℃の真空乾燥機で乾燥して、ニッケル−リン合金からなる下地皮膜が形成された下地皮膜被覆粒子を得た。この下地被膜の膜厚を上述の方法で求めた結果、100nmであった。
(1-2) Base film forming treatment having a substantially uniform thickness Mixing containing 224 g / L of nickel sulfate aqueous solution (first aqueous solution), 210 g / L of sodium hypophosphite and 80 g / L of sodium hydroxide 300 mL each of the aqueous solution (second aqueous solution) was used. These were continuously added separately to the slurry of the pretreated core material particles by a metering pump, and the electroless plating process was started. The addition rate was 2.5 mL / min. After all the liquid was added, stirring was continued for 5 minutes while maintaining the temperature at 70 ° C. Next, the liquid was filtered, and the filtrate was washed three times, and then dried with a vacuum dryer at 100 ° C. to obtain base coat coated particles on which a base coat made of a nickel-phosphorus alloy was formed. As a result of obtaining the film thickness of the undercoat film by the above-described method, it was 100 nm.
(2)第2工程(突起部を有する上層皮膜形成処理)
実施例1と同様に行った。形成された上層皮膜の膜厚を上述の方法で測定した結果、25nmであった。
(2) Second step (upper layer film forming process having protrusions)
The same operation as in Example 1 was performed. It was 25 nm as a result of measuring the film thickness of the formed upper film by the above-mentioned method.
〔実施例16ないし24〕
以下の表2に示す条件を採用する以外は実施例15と同様にして導電性粒子を得た。得られた導電性粒子は、実施例15の導電性粒子と同様に、略均一な厚みを有する平坦な下地皮膜及び突起部を有する上層皮膜を具備するものであった。
[Examples 16 to 24]
Conductive particles were obtained in the same manner as in Example 15 except that the conditions shown in Table 2 below were adopted. The obtained conductive particles, like the conductive particles of Example 15, were provided with a flat base film having a substantially uniform thickness and an upper film having protrusions.
〔比較例1ないし6〕
以下の表2に示す条件を採用する以外は実施例15と同様にして導電性粒子を得た。得られた導電性粒子は、略均一な厚みを有する平坦な下地皮膜及び略均一な厚みを有する平坦な上層皮膜を具備するものであった。
[Comparative Examples 1 to 6]
Conductive particles were obtained in the same manner as in Example 15 except that the conditions shown in Table 2 below were adopted. The obtained conductive particles were provided with a flat base film having a substantially uniform thickness and a flat upper film having a substantially uniform thickness.
〔評価〕
実施例及び比較例で得られた導電性粒子について、その下地皮膜のリン含有量、上層皮膜のリン含有量、上層皮膜のタングステン含有量、上層皮膜のモリブデン含有量、下地皮膜及び上層皮膜それぞれの結晶構造の有無、並びに室温下及び高温高湿下での導電性をそれぞれ測定・評価した。測定・評価は以下の方法によって行った。それらの結果を以下の表3に示す。
[Evaluation]
About the conductive particles obtained in the examples and comparative examples, the phosphorus content of the base film, the phosphorus content of the upper film, the tungsten content of the upper film, the molybdenum content of the upper film, the base film and the upper film, respectively. The presence / absence of a crystal structure, and conductivity at room temperature and high temperature and high humidity were measured and evaluated, respectively. Measurement and evaluation were performed by the following methods. The results are shown in Table 3 below.
〔下地皮膜のリン含有量〕
上層皮膜被覆前の下地皮膜被覆粒子を王水に浸漬して下地皮膜を溶解し、皮膜成分をICP又は化学分析し、リン含有量(%)を求めた。
[Phosphorus content of undercoat]
The undercoat film-coated particles before coating the upper film were immersed in aqua regia to dissolve the undercoat film, and the film components were subjected to ICP or chemical analysis to determine the phosphorus content (%).
〔上層皮膜のリン含有量、タングステン含有量、モリブデン含有量〕
上層被覆処理を行った後に王水に浸して全皮膜を溶解し、全皮膜成分をICP又は化学分析し、ニッケル含有量A(%)、リン含有量B(%)、タングステン含有量C(%)及びモリブデン含有量D(%)を算出した。更に下地被覆処理を施したときのICP分析からニッケル含有量A’(%)及びリン含有量B’(%)を算出した。これらを用い、以下の式(8)により上層皮膜中のリン含有率E(%)を算出し、以下の式(9)によりタングステン含有率F(質量%)を算出し、以下の式(10)によりモリブデン含有率G(質量%)を算出した。
E=(B−B’)/(A−A’+B−B’+C+D)×100 (8)
F= C/( A−A’+B−B’+C +D)×100 (9)
G= D/( A−A’+B−B’+C +D)×100 (10)
[Phosphorus content, tungsten content, molybdenum content of the upper film]
After coating the upper layer, it is immersed in aqua regia to dissolve the entire film, and all film components are analyzed by ICP or chemical analysis. Nickel content A (%), phosphorus content B (%), tungsten content C (% ) And molybdenum content D (%). Furthermore, the nickel content A ′ (%) and the phosphorus content B ′ (%) were calculated from the ICP analysis when the base coating treatment was performed. Using these, the phosphorus content E (%) in the upper film is calculated by the following formula (8), the tungsten content F (% by mass) is calculated by the following formula (9), and the following formula (10 ) To calculate the molybdenum content G (mass%).
E = (BB ′) / (AA ′ + BB ′ + C + D) × 100 (8)
F = C / (AA ′ + BB ′ + C + D) × 100 (9)
G = D / (AA ′ + BB ′ + C + D) × 100 (10)
〔下地皮膜及び上層皮膜の結晶構造〕
下地被膜の結晶構造は、上層皮膜被覆前の下地皮膜被覆粒子についてX線回析測定を行って求めた。X線回析測定は、Rigaku社製「X−ray diffraction UltimaIV」を用い、測定条件は、管電圧:40kV、管電流:40mA、X線:CuKα(波長λ=1.541Å)とした。X線回析測定によりニッケル−リン合金の回析ピークが確認されたとき、結晶構造ありと判断した。また、上層皮膜の結晶構造は、皮膜をFIB等で薄片化後、上層皮膜最表層から数nm程度の深さの皮膜を、下地被膜のX線回析測定と同様の測定機器及び測定条件を用いてX線回折測定し、ニッケルやニッケル合金の回折ピークが確認されたときに結晶構造ありと判断した。
[Crystal structure of undercoat and overcoat]
The crystal structure of the undercoat was obtained by performing X-ray diffraction measurement on the undercoat-coated particles before the upper coat was coated. For X-ray diffraction measurement, “X-ray diffraction Ultimate IV” manufactured by Rigaku Corporation was used, and the measurement conditions were tube voltage: 40 kV, tube current: 40 mA, and X-ray: CuKα (wavelength λ = 1.541). When the diffraction peak of the nickel-phosphorus alloy was confirmed by X-ray diffraction measurement, it was judged that there was a crystal structure. In addition, the crystal structure of the upper film is the same as that of the X-ray diffraction measurement of the base film after the film is thinned with FIB or the like, and the film with a depth of about several nm from the outermost layer of the upper film is measured. X-ray diffraction measurement was performed, and when a diffraction peak of nickel or a nickel alloy was confirmed, it was judged that there was a crystal structure.
〔室温下及び高温高湿下での導電性の評価〕
エポキシ樹脂100部、硬化剤150部、トルエン70部を混合し、絶縁性接着剤を調製した。この絶縁性接着剤に導電性粒子15部を配合してペーストを得た。バーコーターを用い、このペーストをシリコーン処理ポリエステルフィルム上に塗布し乾燥させた。得られた塗工フィルムを用い、全面をアルミニウムで蒸着したガラスと、20μmピッチに銅パターンを形成したポリイミドフィルム基板との間の電気接続を行った。そして両者間の導通抵抗値を測定することで、導電性粒子の導電性を評価した。導通抵抗は室温下(25℃・50%RH)及び高温高湿下(85℃・85%RH、500時間保存後)で測定した。
[Evaluation of conductivity at room temperature and high temperature and high humidity]
100 parts of epoxy resin, 150 parts of curing agent, and 70 parts of toluene were mixed to prepare an insulating adhesive. The insulating adhesive was mixed with 15 parts of conductive particles to obtain a paste. This paste was applied onto a silicone-treated polyester film and dried using a bar coater. Using the obtained coated film, electrical connection was made between a glass whose entire surface was vapor-deposited with aluminum and a polyimide film substrate having a copper pattern formed on a 20 μm pitch. And the electrical conductivity of electroconductive particle was evaluated by measuring the conduction | electrical_connection resistance value between both. The conduction resistance was measured at room temperature (25 ° C./50% RH) and high temperature and high humidity (85 ° C./85% RH, after storage for 500 hours).
表3に示す結果から明らかなとおり、各実施例で得られた導電性粒子(本発明品)は、比較例で得られた導電性粒子に比べて抵抗値が低く、導電性が高いことが判る。また、各実施例で得られた導電性粒子は、比較例で得られた導電性粒子に比べて、高温高湿下で保存後した後の抵抗値の上昇の程度が小さいことが判る。特に、実施例1ないし14と実施例15ないし24との対比から明らかなとおり、下地皮膜及び上層皮膜の双方に突起部が形成されている実施例1ないし14の導電性粒子は、上層皮膜にのみ突起部が形成されている実施例15ないし24の導電性粒子に比べて抵抗値が一層低く、導電性が一層高いことが判る。 As is clear from the results shown in Table 3, the conductive particles obtained in each example (the product of the present invention) have a lower resistance value and higher conductivity than the conductive particles obtained in the comparative examples. I understand. In addition, it can be seen that the conductive particles obtained in each example have a smaller increase in resistance value after storage under high temperature and high humidity than the conductive particles obtained in the comparative example. In particular, as is clear from the comparison between Examples 1 to 14 and Examples 15 to 24, the conductive particles of Examples 1 to 14 in which protrusions are formed on both the base film and the upper film are formed on the upper film. It can be seen that the resistance value is lower and the conductivity is higher than that of the conductive particles of Examples 15 to 24 in which only the protrusions are formed.
Claims (9)
前記導電性皮膜が、前記芯材粒子の表面に接する下地皮膜と、該下地皮膜の表面に接する上層皮膜とを有し、
前記下地皮膜は、ニッケル及びリンを含み、
前記下地皮膜は、平坦部と、該平坦部から突出し、かつ該平坦部からの連続体になっている複数の突起部とを有し、該平坦部と該突起部とが同一の材料から構成されており、
前記上層皮膜は、結晶構造を有し、ニッケル、リン及び1種類以上の金属M(ただしニッケルを除く。)を含み、
前記上層皮膜は、平坦部と、該平坦部から突出し、かつ該平坦部からの連続体になっている複数の突起部とを有し、該平坦部と該突起部とが同一の材料から構成されていることを特徴とする導電性粒子。 In the conductive particles formed by forming a conductive film on the surface of the core material particles,
The conductive film has a base film in contact with the surface of the core particles, and an upper film in contact with the surface of the base film,
The undercoat includes nickel and phosphorus,
The undercoat has a flat portion and a plurality of protrusions protruding from the flat portion and being a continuous body from the flat portion, and the flat portion and the protrusion are made of the same material. Has been
The upper film has a crystal structure, and includes nickel, phosphorus, and one or more kinds of metals M (excluding nickel),
The upper layer coating is a flat portion projects from the flat part, and a plurality of protrusions that is a continuum from the flat portion, and the flat portion and the protrusion portion from the same material An electrically conductive particle characterized by comprising.
ニッケル源及びリン化合物からなる還元剤を含む無電解めっき浴を用い、無電解めっきによって芯材粒子の表面にニッケル及びリンを含む突起部を有する下地皮膜を形成し、
ニッケル源、金属M(ただしニッケルを除く。)源、リン化合物からなる還元剤及びヒドロキシ酸を含む無電解めっき浴を用い、無電解めっきによって前記下地皮膜の表面に、ニッケル、リン及び金属M(ただしニッケルを除く。)を含み、かつ平坦部と、該平坦部から突出し、かつ該平坦部からの連続体になっている複数の突起部とを有し、該平坦部と該突起部とが同一の材料から構成されている上層皮膜を形成する工程を有することを特徴とする導電性粒子の製造方法。 It is a manufacturing method of the electroconductive particle of Claim 1, Comprising:
Using an electroless plating bath containing a reducing agent comprising a nickel source and a phosphorus compound , an undercoat film having protrusions containing nickel and phosphorus is formed on the surface of the core material particles by electroless plating,
Using an electroless plating bath containing a nickel source, a metal M (excluding nickel) source, a reducing agent composed of a phosphorus compound and a hydroxy acid, nickel, phosphorus and metal M ( Except for nickel.) And a plurality of protrusions protruding from the flat part and being a continuous body from the flat part, and the flat part and the protrusions are The manufacturing method of the electroconductive particle characterized by having the process of forming the upper film | membrane comprised from the same material.
The method for producing conductive particles according to claim 8 , wherein the hydroxy acid is glycolic acid, lactic acid, or glyceric acid.
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JP2012149772A JP5973257B2 (en) | 2012-07-03 | 2012-07-03 | Conductive particles and conductive material containing the same |
KR1020130074810A KR20140004574A (en) | 2012-07-03 | 2013-06-27 | Conductive particle, conductive material, and method for manufacturing the conductive particle |
TW102123407A TWI602201B (en) | 2012-07-03 | 2013-07-01 | Conductive particles, conductive material and method for producing conductive particles |
CN201310274788.0A CN103531271B (en) | 2012-07-03 | 2013-07-02 | Conductive particle, conductive material, and method for manufacturing the conductive particle |
CN201610926169.9A CN107424665B (en) | 2012-07-03 | 2013-07-02 | The manufacturing method of electroconductive particle, conductive material and electroconductive particle |
KR1020170010249A KR101937734B1 (en) | 2012-07-03 | 2017-01-23 | Conductive particle, conductive material, and method for manufacturing the conductive particle |
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JP6646366B2 (en) * | 2014-06-24 | 2020-02-14 | 積水化学工業株式会社 | Conductive particles, conductive material and connection structure |
JP6567921B2 (en) * | 2014-08-29 | 2019-08-28 | Dowaエレクトロニクス株式会社 | Silver-coated copper powder and method for producing the same |
JP6443732B2 (en) | 2014-10-24 | 2018-12-26 | 日立金属株式会社 | Conductive particles, conductive powder, conductive polymer composition and anisotropic conductive sheet |
CN107112072B (en) * | 2014-11-17 | 2019-06-28 | 积水化学工业株式会社 | Electroconductive particle, conductive material and connection structural bodies |
JP6660171B2 (en) * | 2014-12-18 | 2020-03-11 | 積水化学工業株式会社 | Conductive particles, method for producing conductive particles, conductive material and connection structure |
TWI666660B (en) * | 2018-03-16 | 2019-07-21 | 新力應用材料有限公司 | Conductive terminal material, resistor and method of manufacturing the same |
KR20200114270A (en) | 2019-03-28 | 2020-10-07 | 장수경 | bee hive box |
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