WO2021233354A1 - Module d'affichage, procédé de fabrication à cet effet et dispositif d'affichage - Google Patents

Module d'affichage, procédé de fabrication à cet effet et dispositif d'affichage Download PDF

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Publication number
WO2021233354A1
WO2021233354A1 PCT/CN2021/094712 CN2021094712W WO2021233354A1 WO 2021233354 A1 WO2021233354 A1 WO 2021233354A1 CN 2021094712 W CN2021094712 W CN 2021094712W WO 2021233354 A1 WO2021233354 A1 WO 2021233354A1
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WIPO (PCT)
Prior art keywords
electrode
layer
transparent substrate
transparent
thin film
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PCT/CN2021/094712
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English (en)
Chinese (zh)
Inventor
吴昊
安娜
张晓萍
蔡斯特
薛海林
马晓
宫心峰
毛先峰
郭宝磊
次刚
孙兴盼
印思琪
曹学文
张罗
张铮
穆文凯
Original Assignee
京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Publication of WO2021233354A1 publication Critical patent/WO2021233354A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display module, a manufacturing method of the display module, and a display device.
  • the in-screen fingerprint technology is widely used because it can realize large-area or even full-screen recognition.
  • this in-screen fingerprint technology has the following shortcomings: during work, the fingerprint recognition sensor is easily affected by stray light from the surrounding large angles, making the fingerprint The recognition sensor is saturated in advance and can no longer receive valid fingerprint optical signals, so the fingerprint recognition sensor cannot work normally.
  • the purpose of the present disclosure is to overcome the above-mentioned shortcomings of the prior art, and provide a display module, a manufacturing method of the display module, and a display device, which can avoid the fingerprint recognition sensor from being interfered by the large viewing angle stray light, thereby achieving a better fingerprint effect .
  • the first aspect of the present disclosure provides a display module, which can be arranged on one side of the backlight module, and the display module includes:
  • the color filter substrate includes a first transparent substrate having a first side facing the backlight module and a second side away from the backlight module;
  • the array substrate is arranged in a box with the color filter substrate, the array substrate includes a second transparent substrate and a fingerprint recognition sensor, the second transparent substrate is located on the second side of the first transparent substrate; the fingerprint recognition sensor It is formed on the side of the second transparent substrate facing the first transparent substrate.
  • the fingerprint recognition sensor includes a transparent electrode, a sensor body, and a reflective electrode that are sequentially stacked on a side of the second transparent substrate facing the first transparent substrate.
  • the array substrate further includes a transparent touch electrode formed between the second transparent substrate and the transparent electrode.
  • the array substrate further includes:
  • a pixel electrode formed on a side of the reflective electrode away from the second transparent substrate
  • a driving layer is formed between the transparent electrode and the transparent touch electrode, and the driving layer includes a plurality of thin film transistors.
  • the plurality of thin film transistors includes a first thin film transistor and a second thin film transistor.
  • a thin film transistor is connected to the pixel electrode, and the second thin film transistor is connected to the transparent electrode.
  • each of the thin film transistors includes a semiconductor layer, a gate, a source, and a drain; the gate is formed on a side of the semiconductor layer away from the second transparent substrate.
  • the source and the drain are arranged in the same layer, and are located on the side of the gate away from the second transparent substrate, and the source is connected to one end of the semiconductor layer through a first via, The drain is connected to the other end of the semiconductor layer through a second via;
  • the pixel electrode is connected to the drain of the first thin film transistor through a third via hole, and a part of the transparent electrode is directly connected to the drain of the second thin film transistor.
  • the array substrate further includes a first transfer electrode, and the first transfer electrode is disposed in the same layer as the drain electrode and is in contact with the transparent electrode through a fourth via hole.
  • the control electrode is connected, and the first transfer electrode is configured to be connected to the driving chip.
  • the array substrate further includes a common electrode formed between the pixel electrode and the reflective electrode.
  • the array substrate further includes a second transfer electrode and a third transfer electrode arranged in the same layer, and the second transfer electrode and the third transfer electrode form Between the common electrode and the reflective electrode;
  • the second transfer electrode is connected to the reflective electrode through a fifth via hole
  • the common electrode is connected to the third transfer electrode through a sixth via hole
  • the second transfer electrode and the first transfer electrode are connected to each other.
  • the three transfer electrodes are configured to be connected with the driving chip.
  • the color filter substrate further includes a black matrix layer, a color filter part, and a colorless transparent part, wherein,
  • the black matrix layer is formed on the second side of the first transparent substrate, and the black matrix layer has a first opening and a second opening, and the orthographic projection of the first opening on the first transparent substrate and The orthographic projection of the pixel electrode on the first transparent substrate overlaps; the orthographic projection of the second opening on the first transparent substrate and the orthographic projection of the fingerprint recognition sensor on the first transparent substrate are overlapped.
  • the projections overlap; the color filter portion is formed in the first opening; the colorless light transmitting portion is formed in the second opening.
  • a second aspect of the present disclosure provides a display device, which includes a backlight module and the display module described in any one of the above, and the display module is formed on one side of the backlight module.
  • a third aspect of the present disclosure provides a manufacturing method of a display module, the display module can be arranged on one side of the backlight module, wherein the manufacturing method includes:
  • the color filter substrate including a first transparent substrate, the first transparent substrate having a first side facing the backlight module and a second side away from the backlight module;
  • the array substrate including a second transparent substrate and a fingerprint recognition sensor formed on the second transparent substrate;
  • the array substrate and the color filter substrate are arranged in a box, wherein the second transparent substrate is located on the second side of the first transparent substrate; the fingerprint recognition sensor is formed on the second transparent substrate facing the Said one side of the first transparent substrate.
  • the forming of the array substrate includes:
  • the driving layer including a plurality of thin film transistors, the plurality of thin film transistors including a first thin film transistor and a second thin film transistor;
  • a pixel electrode is formed on a side of the reflective electrode away from the second transparent substrate, and the pixel electrode is connected to the first thin film transistor.
  • forming a driving layer on the insulating protection layer includes:
  • first via hole and a second via hole penetrating the interlayer dielectric layer and the gate insulating layer, the first via hole and the second via hole respectively exposing two ends of the semiconductor layer;
  • a patterning process is used to form the source and drain of each thin film transistor on the interlayer dielectric layer, the source is connected to one end of the semiconductor layer through the first via hole, and the drain passes through The second via hole is connected to the other end of the semiconductor layer.
  • a part of the transparent electrode directly overlaps the drain of the second thin film transistor.
  • first via hole and the second via hole penetrating the interlayer dielectric layer and the gate insulating layer are formed, it is also possible to form the first via hole penetrating the interlayer dielectric layer.
  • a first transfer electrode is also formed, and the first transfer electrode passes through the fourth pass
  • the hole is connected to the transparent touch electrode, and the first transfer electrode is configured to be connected to the driving chip.
  • the method before forming the pixel electrode and after forming the reflective electrode, the method further includes:
  • the pixel electrode is connected to the drain of the first thin film transistor through the third via hole, and the second switching electrode and the third switching electrode are configured to be connected to a driving chip.
  • the array substrate is located on the side of the color filter substrate away from the backlight module, it can prevent the large viewing angle stray light reflected by the color filter substrate from irradiating fingerprints On the recognition sensor, a good fingerprint recognition effect can be achieved and the accuracy of fingerprint recognition can be improved.
  • Figure 1 shows a schematic diagram of the optical path of part of the stray light in a display device in the related art
  • FIG. 2 shows a schematic structural diagram of a display device according to an embodiment of the present disclosure
  • FIG. 3 shows a schematic diagram of the optical path of part of the stray light in the display device according to an embodiment of the present disclosure
  • FIG. 4 shows a schematic structural diagram of a display module according to an embodiment of the present disclosure
  • FIG. 5 shows a schematic diagram of the assembled structure of the display module and the backlight module according to another embodiment of the present disclosure
  • FIG. 6 shows a schematic diagram of the structure of the display module and the backlight module described in the related art after assembling
  • FIG. 7 shows a flowchart of a manufacturing method of a display module according to an embodiment of the present disclosure
  • FIG. 8 shows a schematic diagram of the structure after completing step S713;
  • FIG. 9 shows a schematic structural diagram after step S7035 is completed
  • Figure 10 shows a schematic diagram of the structure after step S7036 is completed
  • FIG. 11 shows a schematic structural diagram after step S706 is completed
  • Figure 12 shows a schematic structural diagram after step S709 is completed
  • FIG. 13 shows a schematic diagram of the structure after step S602 is completed
  • FIG. 14 shows a schematic diagram of the structure after step S604 is completed.
  • Display module 100, color filter substrate; 101, first transparent substrate; 101a, first side; 101b, second side; 102, black matrix layer; 102a, first opening; 102b, second opening; 103 , Color filter part; 104, colorless light transmission part; 105, array substrate; 106, second transparent substrate; 107, fingerprint recognition sensor; 107a, transparent electrode; 107b, sensor body; 107c, reflective electrode; 108, transparent Touch electrode; 109, insulating protective layer; 110a, first thin film transistor; 110b, second thin film transistor; 1110, semiconductor layer; 1111, gate insulating layer; 1112, gate; 1113, interlayer dielectric layer; 1114, first 1 Via; 1115, second via; 1116, source; 1117, drain; 1118, fourth via; 1119, first transfer electrode; 112, planarization layer, 113, first passivation layer, 114 , The fifth via; 116, the second transfer electrode; 117, the third transfer electrode; 118, the second passivation layer;
  • on can mean that one layer is directly formed or disposed on another layer, or can mean a layer A layer is formed indirectly or arranged on another layer, that is, there are other layers between the two layers.
  • the term “same layer arrangement” used means that two layers, parts, components, elements or parts can be formed by the same patterning process, and the two layers, parts, components , Components or parts are generally formed of the same material.
  • patterning process generally includes the steps of photoresist coating, exposure, development, etching, and photoresist stripping.
  • one-time patterning process means a process of forming patterned layers, parts, components, etc., using one mask.
  • the array substrate 105 in the liquid crystal display product is disposed on the side of the color filter substrate 100 close to the backlight module 20, that is, the light emitted by the backlight module 20 sequentially passes through the array substrate 105 , The color film substrate 100, and then emitted; but this design makes the fingerprint recognition sensor 107 integrated on the array substrate 105 vulnerable to stray light from the surrounding large angle, as shown in Figure 1, that is: large angle stray light can reach the color
  • the color filter portion 103 of the film substrate 100 is reflected by the color filter portion 103 to the fingerprint recognition sensor 107.
  • stray lights saturate the fingerprint recognition sensor 107 in advance and can no longer receive effective fingerprint optical signals, thereby making the fingerprint recognition sensor 107 does not work properly. It should be noted that the dashed arrow shown in FIG. 1 may indicate the aforementioned stray light.
  • an embodiment of the present disclosure provides a display module 10, which can be arranged on one side of the backlight module 20, and the display module 10 may include a color film substrate 100 And the array substrate 105; wherein the array substrate 105 and the color filter substrate 100 are arranged in a box, and the array substrate 105 can be located on the side of the color filter substrate 100 away from the backlight module 20, that is, the light emitted by the backlight module 20 first After passing through the color filter substrate 100, then passing through the array substrate 105, and then ejecting.
  • the color filter substrate 100 may include a first transparent substrate 101, and the first transparent substrate 101 may be a glass substrate, but is not limited thereto.
  • the first transparent substrate 101 is first defined in the embodiment of the present disclosure.
  • the first transparent substrate 101 faces the backlight mold.
  • One side of the group 20 may be the first side 101a, and the side away from the backlight module 20 may be the second side 101b. That is, the first transparent substrate 101 has a first side 101a facing the backlight module 20 and a first side 101a away from the backlight module 20.
  • the second side 101b of the group 20 is first transparent substrate 101, and the first transparent substrate 101 may be a glass substrate, but is not limited thereto.
  • the first transparent substrate 101 is first defined in the embodiment of the present disclosure.
  • the first transparent substrate 101 faces the backlight mold.
  • One side of the group 20 may be the first side 101a, and the side away from the backlight module 20 may be the second side 101b. That is, the first transparent substrate 101 has a first side 101a facing the
  • the color filter substrate 100 not only includes the first transparent substrate 101, as shown in FIG. 2, but also includes a color filter 103 on the second side 101b of the first transparent substrate 101.
  • the specific description of the color filter substrate 100 will be described in detail later in conjunction with the structure of the array substrate 105.
  • the array substrate 105 may include a second transparent substrate 106 and a fingerprint recognition sensor 107; the second transparent substrate 106 is located on the second side 101b of the first transparent substrate 101, and the second transparent substrate 106 may be a glass substrate, But it is not limited to this; the fingerprint recognition sensor 107 is formed on the side of the second transparent substrate 106 facing the first transparent substrate 101.
  • the array substrate 105 is located on the side of the color filter substrate 100 away from the backlight module 20, compared to the related art, the array substrate 105 is located on the side of the color filter substrate 100 facing the backlight module 20.
  • the solution shown in FIG. 1 can prevent the large viewing angle stray light reflected by some structures in the color filter substrate 100 (for example, the color filter portion 103) from being irradiated on the fingerprint recognition sensor 107, as shown in FIG. 3, the backlight Part of the stray light emitted by the module 20 (shown by the dotted arrow in FIG. 3) is irradiated on the color filter portion 103, and then reflected by the color filter portion 103 toward the side where the backlight module 20 is located.
  • the color filter portion 103 and The stray light will not be reflected into the fingerprint recognition sensor 107 above, so that it can prevent the stray light from saturating the fingerprint recognition sensor 107 in advance and the fingerprint recognition sensor 107 can no longer receive effective fingerprint optical signals, so that the fingerprint recognition sensor 107 can reach Good fingerprint recognition effect, improve the accuracy of fingerprint recognition.
  • the fingerprint recognition sensor 107 may include a transparent electrode 107a, a sensor body 107b, and a reflective electrode 107c that are sequentially stacked on the side of the second transparent substrate 106 facing the first transparent substrate 101; 107, the transparent electrode 107a can be formed on the side of the second transparent substrate 106 facing the first transparent substrate 101, and then the sensor body 107b can be formed on the side of the transparent electrode 107a away from the second transparent substrate 106, and finally the sensor body 107b can be away from the sensor body 107b.
  • a reflective electrode 107c is formed on one side of the second transparent substrate 106, that is, the fingerprint recognition sensor 107 has a longitudinal structure; this allows the fingerprint reflection light to enter the sensor body 107b through the second transparent substrate 106 and the transparent electrode 107a in turn. 107b can convert the reflected light of the fingerprint into an electrical signal, and then transmit the electrical signal to an external driving chip (not shown in the figure) through the reflective electrode 107c, thereby identifying the optical signal of the fingerprint.
  • the reflective electrode 107c can be used to reflect the light emitted by the backlight module 20 or other stray light during the fingerprint recognition process.
  • the fingerprint recognition sensor 107 is prevented from being saturated in advance by the light emitted by the backlight module 20 or other stray light, so that the fingerprint recognition sensor 107 can no longer receive valid fingerprint optical signals, so that the fingerprint recognition sensor 107 can reach Good fingerprint recognition effect, improve the accuracy of fingerprint recognition.
  • the sensor body 107b can be a PN junction
  • the transparent electrode 107a can be made of transparent materials such as ITO (indium tin oxide), indium zinc oxide (IZO), zinc oxide (ZnO), etc.
  • the reflective electrode 107c can be made of metal Made of materials or alloy materials.
  • the array substrate 105 may further include a transparent touch electrode 108, and the transparent touch electrode 108 may be formed between the second transparent substrate 106 and the transparent electrode 107a of the fingerprint recognition sensor 107, That is to say, the transparent touch electrode 108 is closer to the second transparent substrate 106 than the fingerprint recognition sensor 107; this design can ensure the accuracy of fingerprint recognition while also ensuring the touch sensitivity of the display module 10, namely: The fingerprint recognition function and the touch function in the display module 10 are perfectly combined.
  • the transparent touch electrode 108 can be made of transparent materials such as ITO (Indium Tin Oxide), Indium Zinc Oxide (IZO), and Zinc Oxide (ZnO).
  • ITO Indium Tin Oxide
  • IZO Indium Zinc Oxide
  • ZnO Zinc Oxide
  • a buffer layer 122 may also be provided between the second transparent substrate 106 and the transparent touch electrode 108, that is, a transparent touch electrode is fabricated on the second transparent substrate 106. Before 108, a buffer layer 122 may be formed on the second transparent substrate 106.
  • the buffer layer 122 may be made of an inorganic material, such as silicon oxide.
  • the array substrate 105 may further include a driving layer and pixel electrodes 123.
  • the driving layer is formed between the transparent touch electrode 108 and the fingerprint recognition sensor 107. That is to say, when the array substrate 105 is made, the transparent touch electrode 108 can be formed on the second transparent substrate 106 first, and then the transparent touch A driving layer is formed on the side of the electrode 108 away from the second transparent substrate 106, and then a fingerprint recognition sensor 107 is formed on the side of the driving layer away from the second transparent substrate 106; and the pixel electrode 123 is formed on the fingerprint recognition sensor 107 away from the second transparent substrate 106 side.
  • the driving layer is formed between the transparent electrode 107a of the fingerprint recognition sensor 107 and the transparent touch electrode 108, and the pixel electrode 123 is formed on the reflective electrode 107c of the fingerprint recognition sensor 107 away from the second transparent substrate 106.
  • the driving layer includes a plurality of thin film transistors.
  • the plurality of thin film transistors may include a first thin film transistor 110a and a second thin film transistor 110b.
  • the first thin film transistor 110a is connected to the pixel electrode 123 and is used to control the operation of the pixel electrode 123;
  • the transistor 110b is connected to the transparent electrode 107a, and is used to control the operation of the fingerprint recognition sensor 107.
  • each thin film transistor (for example, the first thin film transistor 110a and the second thin film transistor 110b) includes a semiconductor layer 1110, a gate 1112, a source 1116, and a drain 1117.
  • the thin film transistor of the embodiment of the present disclosure may be a top gate type.
  • the gate 1112 is formed on the side of the semiconductor layer 1110 away from the second transparent substrate 106; and the source 1116 and the drain 1117 is arranged in the same layer and is located on the side of the gate 1112 away from the second transparent substrate 106; wherein, the source 1116 is connected to one end of the semiconductor layer 1110 through the first via hole, and the drain 1117 is connected to the semiconductor layer 1110 through the second via hole. The other end of the connection.
  • each thin film transistor may further include a gate insulating layer 1111 between the semiconductor layer 1110 and the gate 1112, and a layer between the source 1116 and the drain 1117 and the gate 1112.
  • the driving layer of the array substrate is not limited to include the above-mentioned thin film transistors, and may also include structures such as storage capacitors (not shown in the figure).
  • the semiconductor layer 1110 and the transparent touch electrode 108 need to be insulated by an insulating protective layer 109. That is, before the semiconductor layer 110 of the thin film transistor is fabricated, an insulating protective layer can be fabricated. The layer 109 covers the transparent touch electrode 108, and then a semiconductor layer 1110 is formed on the insulating protective layer 109.
  • the gate 1112, the source 1116, and the drain 1117 in the thin film transistor are closer to the backlight module 20 than the semiconductor layer 1110.
  • This design makes the gate Both the electrode 1112, the source electrode 1116, and the drain electrode 1117 can shield the semiconductor layer 1110.
  • the layer 124 shields the semiconductor layer 1110.
  • the array substrate 105 of the embodiment of the present disclosure does not need to be provided with an additional light shielding layer 124 to shield the semiconductor layer 1110.
  • FIG. 5 and FIG. 6 shows that, therefore, a mask can be saved Process, which can reduce costs.
  • the aforementioned pixel electrode 123 can be connected to the drain electrode 1117 of the first thin film transistor 110a through the third via hole; and the portion of the transparent electrode 107a can be directly connected to the drain electrode 1117 of the second thin film transistor 110b.
  • this design can reduce The arrangement of a layer of insulating layer 126 can be seen in comparison with FIG. 5 and FIG. 6, therefore, a masking process can be saved, and the cost can be reduced.
  • the array substrate 105 further includes a first transfer electrode 1119.
  • the first transfer electrode 1119 and the drain electrode 1117 are arranged in the same layer and connected to the transparent touch electrode 108 through a fourth via hole.
  • 1119 is configured to be connected to a driver chip (not shown in the figure), that is, the transparent touch electrode 108 can be connected to the driver chip through the first transfer electrode 1119 provided on the same layer as the drain electrode 1117 of the thin film transistor.
  • the first transfer electrode 1119 and the drain electrode 1117 of the thin film transistor are arranged in the same layer, while ensuring that the transparent touch electrode 108 is connected to the driving chip through the first transfer electrode 1119, the The masking process can be reduced, so that the cost can be reduced.
  • the array substrate 105 may further include a common electrode 120 formed between the pixel electrode 123 and the reflective electrode 107c of the fingerprint recognition sensor 107, that is, in the process of manufacturing the array substrate 105, The common electrode 120 is formed after the reflective electrode 107c of the fingerprint recognition sensor 107 is manufactured and before the pixel electrode 123 is manufactured.
  • the pixel electrode 123 may be a slit electrode, and the common electrode 120 may be a plate-shaped electrode, but it is not limited to this.
  • the pixel electrode 123 may be a plate-shaped electrode and the common electrode 120 is a slit electrode, depending on the specific situation.
  • the common electrode 120 and the pixel electrode 123 can be made of transparent materials such as ITO (Indium Tin Oxide), Indium Zinc Oxide (IZO), and Zinc Oxide (ZnO).
  • the common electrode 120 is not limited to be formed on the side of the pixel electrode 123 facing the second transparent substrate 106, and the common electrode 120 may also be formed on the side of the pixel electrode 123 away from the second transparent substrate 106.
  • the common electrode 120 and the pixel electrode 123 are not limited to be formed on the same substrate. That is, the common electrode 120 and the pixel electrode 123 may also be formed on different substrates.
  • the pixel electrode 123 may be formed on the array substrate 105, and the common The electrode 120 may be formed on the color filter substrate 100 or the like.
  • the array substrate 105 further includes a second transfer electrode 116 and a third transfer electrode 117 arranged in the same layer.
  • the second transfer electrode 116 and the third transfer electrode 117 are formed on the common electrode 120 and the fingerprint Between the reflective electrodes 107c of the recognition sensor 107, that is, the second transfer electrode 116 and the third transfer electrode 117 are formed after the reflective electrode 107c of the fingerprint recognition sensor 107 is formed and before the common electrode 120 is formed.
  • the second transfer electrode 116 is connected to the reflective electrode 107c of the fingerprint identification sensor 107 through the fifth via hole
  • the common electrode 120 is connected to the third transfer electrode 117 via the sixth via hole
  • the second transfer electrode 116 and the second transfer electrode 116 are connected to the third transfer electrode 117.
  • the three transfer electrodes 117 are configured to be connected to the driving chip, that is, the fingerprint recognition sensor 107 can be connected to the driving chip through the second switching electrode 116
  • the common electrode 120 can be connected to the driving chip through the third switching electrode 117.
  • first transfer electrode 1119, second transfer electrode 116, and third transfer electrode 117 can be connected to the same driver chip to realize TDDI (Touch and Display Driver Integration). Driver integration), but not limited to this.
  • the first transfer electrode 1119, the second transfer electrode 116, and the third transfer electrode 117 can also be connected to different driving chips, depending on the specific situation.
  • the array substrate 105 may further include a planarization layer 112, a first passivation layer 113, a second passivation layer 118, and a third passivation layer 121; for the positions of these layers in the array substrate 105, please refer to the following text The content described in the manufacturing method of the display module 10 in the embodiment will not be described in detail here.
  • the array substrate 105 is not limited to including the aforementioned structures, but may also include other structures, such as data lines, gate lines (not shown in the figure), etc., because the arrangement of these structures is not The technical points to be protected by this application, therefore, will not be described in detail here, and the specific settings can refer to related conventional technologies.
  • the color filter substrate 100 may further include a black matrix layer 102, a color filter portion 103 and a colorless transparent portion 104.
  • the black matrix layer 102 is formed on the second side 101b of the first transparent substrate 101, and the black matrix layer 102 has a first opening and a second opening.
  • the orthographic projection of the first opening on the first transparent substrate 101 and the pixels The orthographic projection of the electrode 123 on the first transparent substrate 101 overlaps; the orthographic projection of the second opening on the first transparent substrate 101 overlaps the orthographic projection of the fingerprint recognition sensor 107 on the first transparent substrate 101; and the color filter
  • the portion 103 is formed in the first opening; the colorless light-transmitting portion 104 is formed in the second opening.
  • part of the light emitted by the backlight module 20 can be filtered by the color filter part 103, and the filtered light is used for display; and part of the light emitted by the backlight module 20 can also be emitted through the colorless light transmitting part 104 and reach the user Finger, the fingerprint reflected light reflected by the user's finger can be incident on the fingerprint identification sensor 107 for identification.
  • the orthographic projection of the fingerprint identification sensor 107 on the second transparent substrate 106 may be located within the orthographic projection of the colorless light-transmitting portion 104 on the second transparent substrate 106 to facilitate fingerprint identification.
  • first opening and the second opening may be provided in multiple; and the color filter portion 103 may be provided in multiple, and the multiple color filter portions 103 may include a red filter portion, a green filter portion, and a blue filter portion. Color filter portions, etc.; each color filter portion 103 is correspondingly formed in a first opening; a plurality of colorless light-transmitting portions 104 may be provided, and each colorless light-transmitting portion 104 is correspondingly formed in a second opening middle.
  • the display module 10 may also include liquid crystal molecules 125 filled between the color filter substrate 100 and the array substrate 105.
  • FIG. 5 has an extra layer of transparent touch control than that of FIG. 6
  • the electrode 108 and an insulating protective layer 109 can be fabricated by a mask process together with the gate insulating layer 1111 and the interlayer dielectric layer 1113, although a two-layer structure is added, only a mask is added.
  • the film process; and Figure 5 is less than the light shielding layer 124 and a layer of insulating layer 126 than Figure 6, that is: two less masking process; in general, the solution shown in Figure 5 compared to Figure 6 shows The solution can reduce one masking process. Therefore, while ensuring the accuracy of fingerprint recognition, the solution shown in FIG. 5 can reduce the process cost compared with the solution shown in FIG. 6.
  • the display module 10 of the embodiment of the present disclosure not only prevents the fingerprint recognition sensor 107 from being interfered with by the large viewing angle cluttered light, and thus achieves a better fingerprint effect, but also ensures that the touch function is not affected, and at the same time achieves In order to reduce the number of masks, the manufacturing cost of the display module 10 is greatly reduced.
  • the embodiment of the present disclosure provides a method for manufacturing a display module.
  • the display module can be the display module 10 described in any of the foregoing embodiments. Refer to FIGS. 2, 4, and 5; the display module 10 can It is arranged on one side of the backlight module 20.
  • the manufacturing method of the display module 10 may include:
  • Step S60 forming a color filter substrate, the color filter substrate includes a first transparent substrate, the first transparent substrate has a first side facing the backlight module and a second side away from the backlight module;
  • Step S70 forming an array substrate, the array substrate including a second transparent substrate and forming a fingerprint recognition sensor on the second transparent substrate;
  • Step S80 arranging the array substrate and the color filter substrate in a box, wherein the second transparent substrate is located on the second side of the first transparent substrate; the fingerprint recognition sensor is formed on the side of the second transparent substrate facing the first transparent substrate.
  • the above-mentioned manufacturing method provided by the embodiment of the present disclosure should have the same features and advantages as the display module 10 provided by the embodiment of the present disclosure. Therefore, the above-mentioned manufacturing method provided by the embodiment of the present disclosure has the characteristics and The advantages can be referred to the features and advantages of the display module 10 described above, which will not be repeated here.
  • step S70 forming an array substrate, may include:
  • Step S700 providing a second transparent substrate 106
  • Step S701 forming a transparent touch electrode 108 on the second transparent substrate 106;
  • Step S702 forming an insulating protective layer 109 covering the transparent touch electrode 108;
  • Step S703 forming a driving layer on the insulating protection layer 109, the driving layer including a plurality of thin film transistors, the plurality of thin film transistors including a first thin film transistor 110a and a second thin film transistor 110b;
  • Step S704 forming a transparent electrode 107a, a sensor body 107b, and a reflective electrode 107c sequentially stacked on the driving layer to form a fingerprint recognition sensor 107, and the transparent electrode 107a is connected to the second thin film transistor 110b;
  • a pixel electrode 123 is formed on the side of the reflective electrode 107c away from the second transparent substrate 106, and the pixel electrode 123 is connected to the first thin film transistor 110a, as shown in FIG.
  • a buffer layer 122 may be formed on the second transparent substrate 106, as shown in FIG. 8.
  • step S703, forming a driving layer on the insulating protection layer 109 may include:
  • Step S7031 forming the semiconductor layer 1110 of each thin film transistor on the insulating protection layer 109;
  • Step S7032 forming a gate insulating layer 1111 covering the semiconductor layer 1110 on the insulating protective layer 109;
  • Step S7033 forming the gate 1112 of each thin film transistor on the gate insulating layer 1111;
  • Step S7034 forming an interlayer dielectric layer 1113 covering the gate electrode 1112 on the gate insulating layer 1111;
  • Step S7035 forming a first via 1114 and a second via 1115 penetrating the interlayer dielectric layer 1113 and the gate insulating layer 1111.
  • the first via 1114 and the second via 1115 respectively expose both ends of the semiconductor layer 1110, as shown in FIG. 9 shown;
  • step S7036 the source electrode 1116 and the drain electrode 1117 of each thin film transistor are formed on the interlayer dielectric layer 1113 by one patterning process.
  • the source electrode 1116 is connected to one end of the semiconductor layer 1110 through the first via 1114, and the drain electrode 1117 passes through the second
  • the via hole 1115 is connected to the other end of the semiconductor layer 1110, as shown in FIG. 10.
  • a portion of the transparent electrode 107a is directly connected to the drain electrode 1117 of the second thin film transistor 110b, that is, after the source electrode 1116 and the drain electrode 1117 of the thin film transistor are completed No other insulating layer is required.
  • the transparent electrode 107a of the fingerprint recognition sensor 107 can be directly formed so that the part of the transparent electrode 107a is directly connected to the drain 1117 of the second thin film transistor 110b, so that the fingerprint recognition sensor 107 and the first Two thin film transistors 110b are connected.
  • the penetrating interlayer dielectric layer 1113 while forming the first via 1114 and the second via 1115 penetrating the interlayer dielectric layer 1113 and the gate insulating layer 1111, the penetrating interlayer dielectric layer 1113, The fourth via hole 1118 of the gate insulating layer 1111 and the insulating protection layer 109, and the fourth via hole 1118 exposes a part of the transparent touch electrode 108.
  • a gray-scale mask process can be used for patterning to simultaneously form the first via 1114, the second via 1115, and the fourth via 1118; specifically, after the interlayer dielectric layer 1113 is formed, A photoresist layer is coated on the interlayer dielectric layer 1113, and then the photoresist layer is patterned using a gray-scale mask to form a photoresist pattern, wherein the photoresist pattern has the same depth as the via hole
  • the thickness of the corresponding parts is the same, and the thickness of the parts corresponding to the via holes of different depths is different.
  • the specific thickness relationship is adjusted according to the via hole depth relationship; then the interlayer dielectric layer 1113, the gate insulating layer 1111 and the insulating protection layer 109 is etched one or more times to form the first via 1114, the second via 1115, and the fourth via 1118; wherein, in the gray-scale mask, the penetration of the mask area corresponding to the via of the same depth is The light rate is the same, and the light transmittance of the mask area corresponding to the via holes of different depths is different.
  • the photoresist layer is a positive photoresist.
  • the fourth via hole is correspondingly formed in the grayscale mask.
  • the light transmittance of the mask area of 1118 may be greater than the light transmittance of the mask area corresponding to the first via 1114 and the second via 1115; when the photoresist layer is a negative photoresist, in order to make the fourth
  • the depth of the via hole 1118 is greater than that of the first via hole 1114 and the second via hole 1115, and the light transmittance of the mask area corresponding to the fourth via hole 1118 in the gray-scale mask may be smaller than that of the first via hole 1114 and the second via hole 1114.
  • the light transmittance of the mask area of the via hole 1115 may be greater than the light transmittance of the mask area corresponding to the first via 1114 and the second via 1115;
  • the first transfer electrode 1119 is also formed.
  • a transfer electrode 1119 is connected to the transparent touch electrode 108 through the fourth via hole 1118, and the first transfer electrode 1119 is configured to be connected to the driving chip.
  • the method before forming the pixel electrode 123 and after forming the reflective electrode 107c, that is, before step S713, and after step S704, the method further includes:
  • a flat layer 112 covering the fingerprint recognition sensor 107 and a first passivation layer 113 are sequentially formed on the driving layer;
  • the flat layer 112 can be made of organic materials, such as resin and other materials;
  • the first passivation layer 113 It can be made of inorganic materials, such as silicon oxide and other materials;
  • Step S706 forming a fifth via hole 114 penetrating through the first passivation layer 113 and the planarization layer 112, and the fifth via hole 114 exposes a part of the reflective electrode 107c, as shown in FIG. 11;
  • Step S707 using a patterning process to form a second transfer electrode 116 and a third transfer electrode 117 on the first passivation layer 113, and the second transfer electrode 116 is connected to the reflective electrode 107c through the fifth via 114;
  • Step S708 forming a second passivation layer 118 covering the second transfer electrode 116 and the third transfer electrode 117 on the first passivation layer 113;
  • Step S709 forming a sixth via hole 119 penetrating the second passivation layer 118, and the sixth via hole 119 exposes a part of the third connecting electrode 117, as shown in FIG. 12;
  • Step S710 forming a common electrode 120 on the second passivation layer 118, and the common electrode 120 is connected to the third transfer electrode 117 through the sixth via hole 119;
  • Step S711 forming a third passivation layer 121 covering the common electrode 120 on the second passivation layer 118;
  • Step S712 forming a third via hole (not shown in the figure) penetrating the third passivation layer 121, the second passivation layer 118, the first passivation layer 113, and the planarization layer 112, and the third via hole exposes the first film The drain 1117 of the transistor 110a;
  • the pixel electrode 123 is connected to the drain electrode 1117 of the first thin film transistor 110a through the third via hole, and the second switching electrode 116 and the third switching electrode 117 are configured to be connected to the driving chip.
  • step S60 forming a color filter substrate, may include:
  • Step S601 providing a first transparent substrate 101, the first transparent substrate 101 having a first side 101a facing the backlight module 20 and a second side 101b away from the backlight module 20;
  • Step S602 forming a black matrix layer 102 on the second side 101b of the first transparent substrate 101, the black matrix layer 102 having a first opening 102a and a second opening 102b, as shown in FIG. 13;
  • Step S603 forming a color filter portion 103, the color filter portion 103 is located in the first opening 102a;
  • step S604 a colorless light-transmitting portion 104 is formed, and the colorless light-transmitting portion 104 is located in the second opening 102b, as shown in FIG. 14.
  • the method may further include: step S90, filling liquid crystal molecules 125 between the array substrate 105 and the color filter substrate 100, as shown in FIG. 4.
  • the display device may be a liquid crystal display device.
  • the display device may include a backlight module 20 and a display module 10.
  • the display module 10 may be the display module 10 described in any of the foregoing embodiments, and the backlight module 20 may include a backlight. Source, lower polarizer, reflector, diffuser (not shown in the figure) and so on. Among them, the display module 10 is formed on one side of the backlight module 20.
  • the specific type of the display device is not particularly limited.
  • the types of display devices commonly used in the field can be used, such as liquid crystal displays, mobile devices such as mobile phones and notebook computers, wearable devices such as watches, and VR devices.
  • the device, etc. can be selected by those skilled in the art according to the specific purpose of the display device, which will not be repeated here.
  • the display device in addition to the display module 10 and the backlight module 20, the display device also includes other necessary components and components. Taking the display as an example, it may also include a cover plate 30 and an upper polarizer 40, as shown in FIG. It can also include a housing, a main circuit board, a power cord, etc., and can be supplemented accordingly in accordance with the specific requirements of the display device in the field, which will not be repeated here.

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Abstract

La présente invention concerne le domaine technique de l'affichage et concerne en particulier un module d'affichage, un procédé de fabrication dudit module et un dispositif d'affichage. Le module d'affichage peut être agencé sur un côté d'un module de rétroéclairage et le module d'affichage comprend : un substrat de filtre coloré, comprenant un premier substrat transparent, le premier substrat transparent ayant un premier côté faisant face au module de rétroéclairage et un second côté distant du module de rétroéclairage ; et un substrat de réseau, assemblé à une cellule avec le substrat de filtre coloré, le substrat de réseau comprenant un second substrat transparent et un capteur de reconnaissance d'empreinte digitale, le second substrat transparent étant situé sur le second côté du premier substrat transparent et le capteur de reconnaissance d'empreintes digitales étant formé sur le côté du second substrat transparent faisant face au premier substrat transparent. La solution peut empêcher le capteur de reconnaissance d'empreinte digitale d'être affecté par une lumière parasite à grand angle, ce qui permet d'obtenir un meilleur effet d'empreinte digitale.
PCT/CN2021/094712 2020-05-20 2021-05-19 Module d'affichage, procédé de fabrication à cet effet et dispositif d'affichage WO2021233354A1 (fr)

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