WO2021223105A1 - Pixel, capteur d'image et dispositif électronique - Google Patents

Pixel, capteur d'image et dispositif électronique Download PDF

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Publication number
WO2021223105A1
WO2021223105A1 PCT/CN2020/088795 CN2020088795W WO2021223105A1 WO 2021223105 A1 WO2021223105 A1 WO 2021223105A1 CN 2020088795 W CN2020088795 W CN 2020088795W WO 2021223105 A1 WO2021223105 A1 WO 2021223105A1
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WO
WIPO (PCT)
Prior art keywords
transistor
pixel
coupled
optical sensor
voltage
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PCT/CN2020/088795
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English (en)
Chinese (zh)
Inventor
林奇青
杨富强
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深圳市汇顶科技股份有限公司
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Priority to PCT/CN2020/088795 priority Critical patent/WO2021223105A1/fr
Publication of WO2021223105A1 publication Critical patent/WO2021223105A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Definitions

  • the present application relates to pixels, and more particularly to a pixel including a pixel circuit provided on a non-epitaxial substrate, and related image sensors and electronic devices.
  • the optical sensor Without increasing the area of the pixel, increasing the sensing area of the optical sensor in the pixel will make the usable area of the pixel circuit other than the optical sensor relatively smaller.
  • the optical sensor has the problem of linearity in the sensing signal due to the change of the cross pressure in the sensing phase.
  • current pixels are generally implemented using epitaxial substrates, and their cost is relatively high. If pixels implemented using non-epitaxial substrates, their cost can be much lower than pixels implemented using epitaxial substrates, but those implemented using non-epitaxial substrates The pixel has a problem of increased leakage current. Therefore, the structure of the existing pixel needs to be further improved to overcome the above-mentioned problems.
  • One of the objectives of the present application is to disclose a pixel and related image sensor and electronic device to solve the above-mentioned problems.
  • An embodiment of the present application discloses a pixel including an optical sensor and a pixel circuit.
  • the optical sensor has a cathode and an anode, and the anode is coupled to the first voltage source.
  • the optical sensor is used for sensing the light signal in the sensing stage and generating the sensing signal in the floating diffusion area.
  • the pixel circuit is arranged on the non-epitaxial substrate.
  • the pixel circuit is coupled between the cathode of the optical sensor, the second voltage source and the floating diffusion region.
  • the pixel circuit includes a reset circuit and an operational amplifier.
  • the reset circuit is coupled between the cathode of the optical sensor and the floating diffusion area. In the reset phase, the reset circuit is used to reset the sensing signal on the floating diffusion region.
  • the operational amplifier has a positive terminal, a negative terminal and an output terminal.
  • the positive terminal is coupled to the second voltage source
  • the negative terminal is coupled to the cathode of the optical sensor
  • the output terminal is coupled to the floating diffusion region.
  • the operational amplifier is used to fix the voltage difference between the cathode and anode of the optical sensor.
  • the optical sensor is arranged on the pixel circuit.
  • An embodiment of the application discloses an image sensor including a pixel array.
  • the pixel array includes a plurality of the pixels.
  • An embodiment of the present application discloses an electronic device including the image sensor and a display screen.
  • the pixels and related image sensors and electronic devices disclosed in the present application can increase the light sensing area, increase the fill factor, and reduce the cost while ensuring the performance of the pixels. Further, the pixels disclosed in the present application improve the performance of the optical sensor. In addition to linearity, it does not increase the leakage current of the circuit.
  • FIG. 1 is a schematic diagram of an embodiment of the image sensor of the application.
  • FIG. 2 is a schematic diagram of an embodiment of a pixel of this application.
  • FIG. 3 is a schematic diagram of another embodiment of the pixel of the application.
  • Fig. 4 is a timing chart of the operation of the pixel.
  • FIG. 5 is a schematic diagram of an embodiment of an electronic device of this application.
  • the optical sensor and the pixel circuits other than the optical sensor are all fabricated on the same plane.
  • the optical sensor and the pixel circuit share a fixed area. Without changing the area of the pixel, increasing the area of the optical sensor will inevitably reduce the usable area of the pixel circuit.
  • the pixel disclosed in this application is realized by a layered structure. The difference from the traditional pixel is that the optical sensor and the pixel circuit in the pixel of this application are arranged on different planes, so the area of the photosensitive area of the optical sensor can be affected by the pixel. The limitation of the area required by the circuit increases the area of the photosensitive area of the optical sensor and thereby increases the fill factor.
  • the filling factor is defined as the ratio of the area of the photosensitive area of the optical sensor to the total area of the pixels.
  • the pixel of the present application uses a novel pixel circuit to control the cross voltage between the cathode and the anode when the optical sensor is sensing the light signal, thereby increasing the linearity of the sensing signal.
  • the entire pixel is realized by using an epitaxial substrate. However, the cost of non-epitaxial substrates is lower than that of epitaxial substrates.
  • the pixels of the present application replace epitaxial substrates with non-epitaxial substrates to realize pixel circuits other than optical sensors, thereby reducing manufacturing costs and changing the circuit structure to overcome Physical disadvantages of non-epitaxial substrates (such as higher leakage current).
  • the technical content of the pixels, related image sensors, and electronic devices of the present application will be described in detail below in conjunction with a number of embodiments and drawings.
  • FIG. 1 is a schematic diagram of an embodiment of an image sensor 100 of this application.
  • the image sensor 100 includes a pixel array 101 and a reading circuit structure 103.
  • the pixel array 101 includes an array composed of at least one pixel. In FIG. 1, only pixels P11, P21, P12, and P22 are shown. In fact, the pixel array 101 includes, for example, a pixel array 101 of n rows*m columns, where n And m are integers greater than zero.
  • the reading circuit structure 103 includes multiple columns of reading circuits, such as reading circuits 103_1, 103_2, etc., which are respectively coupled to the multiple columns of pixels in the pixel array 101.
  • the operation of the image sensor 100 has a reset phase, a sensing phase, and a readout phase.
  • Each pixel in the pixel array 101 resets the sensing signal in the reset stage, and regenerates the sensing signal in the sensing stage, and outputs the sensing signal to The corresponding reading circuit in the reading circuit structure 103.
  • the pixel array 101 can respectively output a plurality of sensing signals corresponding to the entire row of pixels to the corresponding reading circuit in the reading circuit structure 103 line by line.
  • the charges of the pixel P11 and the pixel P12 are respectively output to the reading circuits 103_1 and 103_2 in the reading circuit structure 103 through the bit line BL1 and the bit line BL2, and then the charges of the pixel P21 and the pixel P22 are passed through the bit lines BL1 and The bit line BL2 is output to the reading circuits 103_1 and 103_2 in the reading circuit structure 103.
  • the reading circuits 103_1 and 103_2 will correspondingly output the reading results SO1 and SO2.
  • FIG. 2 is a schematic diagram of an embodiment of the pixel P11 of this application.
  • the pixel P11 is coupled to the reading circuit 103_1, and the pixel P11 includes the optical sensor PD and the pixel circuit 200.
  • the optical sensor PD In the sensing phase, when the light signal SL is irradiated to the pixel P11, the optical sensor PD is used to convert the light signal SL into electric charge.
  • the sensing signal SS is generated by induction, and then in the read phase, the output signal SO is generated to the read circuit 103_1 according to the sensing signal SS and the selection signal SE.
  • the optical sensor PD and the pixel circuit 200 are arranged on different planes.
  • the pixel circuit 200 is disposed on a non-epitaxial substrate, and the optical sensor PD1 is disposed above the pixel circuit 200.
  • the present application does not limit the implementation of the optical sensor PD.
  • the optical sensor PD can be implemented by a thin film photodiode or a complementary metal-oxide semiconductor (Complementary Metal-Oxide-Semiconductor Transistor, CMOS) photodiode.
  • CMOS complementary Metal-Oxide-Semiconductor Transistor
  • the optical sensor PD covers the pixel circuit 200. From the incident direction of the optical signal SL, the optical signal SL will first encounter the optical sensor PD.
  • the optical sensor PD can increase the photosensitive area without occupying the area of the pixel circuit 200 below, thereby increasing the fill factor of the pixel P11.
  • the optical sensor PD is a photodiode, which includes a cathode and an anode. As shown in FIG. 2, the cathode and anode of the optical sensor PD are connected across the pixel circuit 200, and the anode is further coupled to the voltage source V1.
  • the pixel circuit 200 is coupled between the optical sensor PD and the reading circuit 103_1.
  • the pixel circuit 200 includes an operational amplifier OP, a capacitor C, a reset circuit 202, and a pixel readout circuit 204.
  • the operational amplifier OP, the capacitor C and the reset circuit 202 are respectively coupled between the optical sensor PD and the floating diffusion FD,
  • the pixel readout circuit 204 is coupled between the floating diffusion FD and the readout circuit 103_1.
  • the reset circuit 202 is used to reset the sensing signal SS on the floating diffusion FD according to at least one control signal.
  • the operational amplifier OP is used to control the voltage difference between the cathode and anode of the optical sensor PD, and the capacitor C is used to accumulate the charge generated by the optical sensor PD induced by the light signal SL, and generate sensing in the floating diffusion area FD Test signal SS.
  • the pixel reading circuit 204 is used to generate an output signal SO to the reading circuit 103_1 according to the sensing signal SS and the selection signal SE.
  • the reset circuit 202 includes a transistor T1, a transistor T2, and a transistor T3.
  • the gates of the transistor T1, the transistor T2, and the transistor T3 respectively receive the control signal CS1, the control signal CS2, and the control signal CS3. Therefore, the conduction and non-conduction of the transistor T1, the transistor T2, and the transistor T3 can be controlled by the control signal CS1, respectively. , Control signal CS2 and control signal CS3. As shown in FIG.
  • the drain of the transistor T1 is coupled to the cathode of the optical sensor PD, the first terminal of the capacitor C1 and the negative terminal (-) of the operational amplifier OP, and the source of the transistor T1 is coupled to the drain of the transistor T2 and the transistor
  • the drain of T3, the source of the transistor T2 is coupled to the second end of the capacitor C, the output of the operational amplifier OP and the floating diffusion FD, and the source of the transistor T3 is coupled to the base of the transistor T3 and the operational amplifier OP
  • the pixel readout circuit 204 includes a transistor T4 and a source follower transistor SF.
  • the gate of the transistor T4 receives the selection signal SE, so the conduction and non-conduction of the transistor T4 can be controlled by the selection signal SE.
  • the source of the source follower transistor SF is coupled to the drain of the transistor T4, and the drain of the source follower transistor SF and the source of the transistor T4 are coupled to the read circuit structure 103_1.
  • the transistor T1, the transistor T2, and the transistor T3 are P-type transistors, and the transistor T4 and the source follower transistor SF are N-type transistors.
  • the foregoing transistor implementation is not limited to this.
  • the control signal CS1 and the control signal CS2 have a system low potential, and the control signal CS3 has a system high potential.
  • the transistor T1 and the transistor T2 are turned on, and the transistor T3 is not turned on.
  • the sensing signal SS is reset, so that the cathode of the optical sensor PD and the floating diffusion area FD have the same potential.
  • the control signal CS1 and the control signal CS2 have a system high potential, and the control signal CS3 has a system low potential.
  • the transistor T1 and the transistor T2 are not conductive, and the transistor T3 is conductive. In this configuration, there is an open circuit between the floating diffusion FD and the cathode of the optical sensor PD. After the optical sensor PD senses the light signal SL, the optical sensor PD senses and generates charges accumulated at the first end of the capacitor C, and induces a sensing signal SS at the second end of the capacitor C.
  • the optical sensor PD is connected across the positive terminal and the negative terminal of the operational amplifier OP, there is a gap between the cathode and the anode of the optical sensor PD.
  • the cross voltage is controlled by the operational amplifier OP to be approximately zero.
  • the optical sensor PD is operated in the photovoltaic mode of the photodiode.
  • the linearity of the optical sensor PD is higher than in other working modes. Compared with the traditional pixel operating the optical sensor PD in the light guide mode, the optical sensor PD operated by the pixel P11 provided in the present application has a higher linearity.
  • the photovoltaic mode is defined as when the cross voltage of the optical sensor PD is operated at zero, and the light guide mode is defined as when the cross voltage of the optical sensor PD is operated under a negative bias voltage, that is, the potential of the cathode is higher than the potential of the anode .
  • the dark current of the optical sensor PD is the smallest, and the optical sensor PD is relatively sensitive to other currents in the pixel circuit 200 at this time. For example, if the leakage current in the pixel circuit 200 having a magnitude equivalent to the dark current of the optical sensor PD flows to the optical sensor PD, the operation of the optical sensor PD will be affected. In other words, under this configuration, the tolerance of the optical sensor PD to the leakage current of the pixel circuit 200 decreases. therefore.
  • the non-conduction of the transistor T1 and the transistor T2 is also used to reduce the leakage current flowing to the optical sensor PD.
  • the turn-on of the transistor T3 transmits the voltage of the voltage source V1 to the source of the transistor T1, and transmits the voltage of the voltage source V1 from the positive terminal to the negative terminal through the virtual short circuit characteristic of the operational amplifier OP.
  • the negative terminal is transmitted to the drain of the transistor T1.
  • the source and drain of the transistor T1 have the same potential, so that the transistor T1 does not flow through the channel leakage current of the transistor T1 during the sensing phase.
  • the pixel circuit 200 is disposed on a non-epitaxial substrate, that is, the components of the pixel circuit 200 are not implemented with any epitaxial layer structure.
  • Transistors realized using non-epitaxial substrates because the lattice arrangement of the non-epitaxial substrate material itself is irregular compared with that of the epitaxial substrate material, so that the transistor is not conductive from the base to the source/drain The leakage current of the pole is relatively high.
  • the source of the transistor T3 is also coupled to the voltage source V1, the positive terminal of the operational amplifier OP, and the base of the transistor T1, and the voltage of the positive terminal of the voltage source V1 is reduced through the virtual short-circuit characteristic of the operational amplifier OP.
  • the drain of the transistor T1 also has the same potential as the voltage of the voltage source V1.
  • the base and drain potentials of the transistor T1 are equal, there is no voltage difference from the base to the drain of the transistor T1, so the leakage current flowing from the base to the drain of the transistor T1 approaches zero. .
  • the pixel circuit 200 can strengthen the control of the leakage current flowing to the optical sensor PD in the sensing phase.
  • the reset circuit 202 makes the transistor T1 and the transistor T2 non-conductive and the transistor T3 conductive during the sensing phase to prevent leakage current from flowing to the optical sensor PD.
  • the reset circuit 202 uses a larger number of transistors to prevent leakage current from flowing to the optical sensor PD, it will have a better effect, that is, the leakage current will be smaller. In other words, for the suppression of leakage current, the more transistors used, the better the effect.
  • this embodiment only uses three transistors T1, T2, and T3 as examples, but this application does not limit the number of transistors in the reset circuit 202, that is, the number of transistors can be more than three or less than three.
  • the reset circuit 202 only uses the transistor T1 and the transistor T2 to prevent leakage current from flowing to the optical sensor PD. Or for example, in other embodiments, the reset circuit 202 only uses the transistor T1 to prevent leakage current from flowing to the optical sensor PD. In other examples, the reset circuit 202 uses additional transistors to prevent leakage current from flowing to the optical sensor PD. The drain of the additional transistor is coupled to the source of the transistor T2, the source of the additional transistor is coupled to the second end of the capacitor C, the output end and the floating diffusion FD, and the gate of the additional transistor receives the additional control signal.
  • the transistor T1 and the transistor T2 are converted from the conducting state to the non-conducting state, and the transistor T3 is converted from the non-conducting state to the conducting state.
  • the control signal CS1, the control signal CS2, and the control signal CS3 sequentially change from a system low potential to a system high potential or from a system high potential to a system low potential, that is In other words, the transistor T1, the transistor T2, and the transistor T3 sequentially switch between conducting and non-conducting states.
  • the control signal CS1, control signal CS2, and control signal CS3 simultaneously change from system high to system low or from system high.
  • the potential becomes the system low potential.
  • the control signal CS1 changes from a system low level to a system high level.
  • the control signal CS2 changes from a system low level to a system high level.
  • the control signal CS2 changes from a system low level to a system high level.
  • the signal CS3 changes from the system high potential to the system low potential. Therefore, in the reset phase, the conduction time of the transistor T2 is longer than the conduction time of the transistor T1, and the non-conduction time of the transistor T3 is longer than the conduction time of the transistor T2.
  • the selection signal SE has a system high potential.
  • the transistor T4 is turned on.
  • the source follower transistor SF outputs the sensing signal SS received at the gate stage as the output signal SO, and then transmits it to the reading circuit 103_1 through the turned-on transistor T4.
  • FIG. 3 is a schematic diagram of another embodiment of the pixel P11.
  • the pixel P11 in FIG. 3 is similar to the pixel P11 in FIG. 2, so similar numbers and related descriptions are not repeated here.
  • the positive terminal of the operational amplifier OP of the pixel P11 in FIG. 3 and the anode of the optical sensor PD are not coupled to each other.
  • the operational amplifier OP of FIG. The positive terminal and the source of the transistor T3 are changed to be coupled to the voltage source V2.
  • the voltage difference between the cathode and the anode of the optical sensor PD is equal to the voltage difference between the voltage of the voltage source V1 and the voltage of the voltage source V2.
  • the operation of the optical sensor PD deviates from the photovoltaic mode.
  • the voltage of the voltage source V2 is greater than the voltage of the voltage source V1, that is, the optical sensor PD operates in the light guide mode.
  • the quantum efficiency of the optical sensor PD is related to the voltage difference between the cathode and the anode, that is, the voltage difference between the voltage of the voltage source V2 and the voltage of the voltage source V1.
  • the quantum efficiency of the optical sensor PD When the voltage of the voltage source V2 is greater than the voltage of the voltage source V1, the more For a long time, the quantum efficiency of the optical sensor PD is higher. When the quantum efficiency of the optical sensor PD is higher, for the same optical signal SL, the optical sensor PD can generate more charges to induce a larger sensing signal SS. However, when the voltage of the voltage source V2 is greater than the voltage of the voltage source V1, the dark current of the optical sensor PD also increases. When the dark current increases, the offset of the sensing signal SS due to the dark current will also increase, thus reducing the dynamic range of the sensing signal SS.
  • the voltage of the voltage source V1 and the voltage of the voltage source V2 are adjustable, that is, the voltage difference between the cathode and the anode of the optical sensor PD can be determined by the quantum efficiency and dark current of the optical sensor PD. The actual situation is optimized.
  • the voltage of the voltage source V2 is the system reference potential, which has a fixed value, such as the ground potential.
  • the pixel P11 only adjusts the voltage of the voltage source V1 to control the quantum efficiency and dark current of the optical sensor PD.
  • the pixel circuit 200 is on the semiconductor substrate, and the optical sensor PD is on the pixel circuit 200, so as to increase the photosensitive area of the pixel P11 per unit area. That is, the filling factor is increased, the linearity of the optical sensor PD is also increased without increasing the leakage current, and the non-epitaxial substrate is used to realize the novel pixel circuit 200 to reduce the manufacturing cost without affecting the quality of the sensing signal SS.
  • FIG. 5 is a schematic diagram of an embodiment of an electronic device of this application.
  • the electronic device 500 can be used to perform optical under-screen/in-screen fingerprint sensing to sense the fingerprint of a specific object.
  • the electronic device 500 includes a display screen 502 and an image sensor 100.
  • the image sensor 100 may be disposed under the display screen 502 to realize under-screen optical fingerprint sensing.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un pixel (P11), comprenant un capteur optique (PD) et un circuit de pixel (200). Le capteur optique comprend une cathode et une anode, et l'anode est couplée à une première source de tension (V1). Le capteur optique est utilisé pour détecter un signal optique (SL) au niveau d'un étage de détection et générer un signal de détection (SS) dans une zone de diffusion flottante (FD). Le circuit de pixels est disposé sur un substrat non épitaxial. Le circuit de pixel est couplé à la cathode du capteur optique et à une seconde source de tension (V2). Le circuit de pixel comprend un circuit de réinitialisation (202) et un amplificateur opérationnel (OP). Le circuit de réinitialisation est couplé entre la cathode et la zone de diffusion flottante, et à un stade de réinitialisation, le circuit de réinitialisation est utilisé pour réinitialiser le signal de détection de la zone de diffusion flottante. L'amplificateur opérationnel a une borne positive (+), une borne négative (-) et une borne de sortie, dans lequel la borne positive est couplée à la seconde source de tension (V2), la borne négative est couplée à la cathode et la borne de sortie est couplée à la zone de diffusion flottante. L'amplificateur opérationnel est utilisé pour fixer la différence de tension entre la cathode et l'anode du capteur optique. Le capteur optique (PD) est disposé sur le circuit de pixels (200).
PCT/CN2020/088795 2020-05-06 2020-05-06 Pixel, capteur d'image et dispositif électronique WO2021223105A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030150977A1 (en) * 2002-02-13 2003-08-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus
CN101656472A (zh) * 2008-08-22 2010-02-24 索尼株式会社 升压电路、固体摄像器件和照相机系统
CN102881703A (zh) * 2012-09-29 2013-01-16 上海中科高等研究院 图像传感器及其制备方法
CN108419031A (zh) * 2018-03-08 2018-08-17 京东方科技集团股份有限公司 像素电路及其驱动方法和图像传感器
CN108470539A (zh) * 2018-06-13 2018-08-31 京东方科技集团股份有限公司 一种像素电路及其驱动方法、显示面板和显示装置
CN111095917A (zh) * 2017-09-22 2020-05-01 索尼半导体解决方案公司 固态摄像器件和电子设备

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030150977A1 (en) * 2002-02-13 2003-08-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus
CN101656472A (zh) * 2008-08-22 2010-02-24 索尼株式会社 升压电路、固体摄像器件和照相机系统
CN102881703A (zh) * 2012-09-29 2013-01-16 上海中科高等研究院 图像传感器及其制备方法
CN111095917A (zh) * 2017-09-22 2020-05-01 索尼半导体解决方案公司 固态摄像器件和电子设备
CN108419031A (zh) * 2018-03-08 2018-08-17 京东方科技集团股份有限公司 像素电路及其驱动方法和图像传感器
CN108470539A (zh) * 2018-06-13 2018-08-31 京东方科技集团股份有限公司 一种像素电路及其驱动方法、显示面板和显示装置

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