WO2021220887A1 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
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- WO2021220887A1 WO2021220887A1 PCT/JP2021/016046 JP2021016046W WO2021220887A1 WO 2021220887 A1 WO2021220887 A1 WO 2021220887A1 JP 2021016046 W JP2021016046 W JP 2021016046W WO 2021220887 A1 WO2021220887 A1 WO 2021220887A1
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- layer
- elastic wave
- piezoelectric
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- electrode
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- 239000000758 substrate Substances 0.000 claims abstract description 78
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical class [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000484 niobium oxide Inorganic materials 0.000 claims abstract description 7
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 38
- 230000001902 propagating effect Effects 0.000 claims description 8
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical group CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 5
- 230000001629 suppression Effects 0.000 abstract description 3
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 abstract 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 229910052839 forsterite Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910052878 cordierite Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02842—Means for compensation or elimination of undesirable effects of reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02858—Means for compensation or elimination of undesirable effects of wave front distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02881—Means for compensation or elimination of undesirable effects of diffraction of wave beam
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Definitions
- the present invention relates to an elastic wave device.
- Patent Document 1 discloses an example of an elastic wave device.
- an IDT (Interdigital Transducer) electrode is provided on the piezoelectric layer.
- a plurality of dielectric films are provided between the tips of the plurality of electrode fingers of the IDT electrode and the piezoelectric layer.
- the dielectric used for the dielectric film include SiO 2 , Al 2 O 3 , PSG (phosphoric acid glass) and BSG (borosilicate glass).
- An object of the present invention is to provide an elastic wave device capable of suppressing the transverse mode more reliably.
- a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and having a plurality of electrode fingers are provided, and the IDT electrodes are adjacent to each other.
- the portion where the electrode fingers overlap in the elastic wave propagation direction is a crossing region, and the crossing region is a central region located on the central side in the direction in which the plurality of electrode fingers extend, and the plurality of the central regions. It has a pair of edge regions arranged on both sides in the direction in which the electrode fingers extend, and in the pair of edge regions, a dielectric film provided between the piezoelectric substrate and the plurality of electrode fingers is further formed.
- the dielectric film comprises at least one dielectric selected from the group consisting of hafnium oxide, niobium oxide, tungsten oxide and cerium oxide.
- a piezoelectric substrate having a piezoelectric layer and an IDT electrode provided on the piezoelectric substrate and having a plurality of electrode fingers are provided.
- the portion where the adjacent electrode fingers of the IDT electrode overlap in the elastic wave propagation direction is a crossing region, and the crossing region is a central region located on the central side in the direction in which the plurality of electrode fingers extend, and the above. It has a pair of edge regions arranged on both sides in a direction in which the plurality of electrode fingers extend in a central region, and is provided between the piezoelectric substrate and the plurality of electrode fingers in the pair of edge regions.
- the piezoelectric film is further provided, the piezoelectric layer is a lithium tantalate layer, the IDT electrode has a main electrode layer, the main electrode layer is an Al layer, and the electrode finger of the IDT electrode.
- the wavelength defined by the pitch is ⁇ [ ⁇ m]
- the thickness of the dielectric film is t_D [ ⁇ ]
- the dielectric constant of the dielectric film is ⁇
- the density of the dielectric film is d [kg / m 3 ]
- the Young ratio of the dielectric film is Y [GPa]
- the thickness of the piezoelectric layer is t_LT [ ⁇ ]
- the thickness of the main electrode layer of the IDT electrode is t_Al [ ⁇ ]
- the sound velocity in the central region is Vc, and the above.
- the t_D [ ⁇ ] When the sound velocity in the pair of edge regions is Ve, the t_D [ ⁇ ], the ⁇ , the d [kg / m 3 ], the Y [GPa], the t_LT [ ⁇ ], and the t_Al [ ⁇ ] are It is a value at which Ve / Vc derived by the following equation 1 is less than 1.
- the transverse mode can be suppressed more reliably.
- FIG. 1 is a front sectional view of an elastic wave device according to a first embodiment of the present invention.
- FIG. 2 is a plan view of the elastic wave device according to the first embodiment of the present invention.
- FIG. 3 is a diagram showing the relationship between the thickness of the dielectric film and the speed of sound in the elastic wave device of the first comparative example and the reference example.
- FIG. 4 is a diagram showing the relationship between the thickness of the dielectric film and the speed of sound in the elastic wave device according to the first embodiment of the present invention.
- FIG. 5 is a diagram showing impedance frequency characteristics according to the first embodiment of the present invention.
- FIG. 6 is a diagram showing impedance frequency characteristics in the second comparative example.
- FIG. 7 is a front sectional view of an elastic wave device according to a first modification of the first embodiment of the present invention.
- FIG. 8 is a front sectional view of an elastic wave device according to a second modification of the first embodiment of the present invention.
- FIG. 9 is a front sectional view of an elastic wave device according to a third modification of the first embodiment of the present invention.
- FIG. 10 is a front sectional view of an elastic wave device according to a fourth modification of the first embodiment of the present invention.
- FIG. 11 is a front sectional view of the elastic wave device according to the second embodiment of the present invention.
- FIG. 1 is a front sectional view of an elastic wave device according to a first embodiment of the present invention.
- FIG. 2 is a plan view of the elastic wave device according to the first embodiment. Note that FIG. 1 is a cross-sectional view passing through the line II in FIG. 2, and is a cross-sectional view passing through the first edge region described later.
- the elastic wave device 1 shown in FIGS. 1 and 2 the transverse mode is suppressed by establishing the piston mode.
- the elastic wave device 1 has a piezoelectric substrate 2.
- An IDT electrode 7 is provided on the piezoelectric substrate 2.
- the IDT electrode 7 has a plurality of electrode fingers.
- a dielectric film 15A and a dielectric film 15B are provided between the tips of the plurality of electrode fingers and the piezoelectric substrate 2.
- the dielectric film 15A and the dielectric film 15B are composed of at least one dielectric selected from the group consisting of hafnium oxide, niobium oxide, tungsten oxide and cerium oxide.
- the piezoelectric substrate 2 has a support substrate 3, a hypersonic film 4 as a hypersonic material layer, a low sound velocity film 5, and a piezoelectric layer 6. More specifically, the hypersonic film 4 is provided on the support substrate 3. A low sound velocity film 5 is provided on the high sound velocity film 4. The piezoelectric layer 6 is provided on the bass velocity film 5.
- An IDT electrode 7 is provided on the piezoelectric layer 6 of the piezoelectric substrate 2. By applying an AC voltage to the IDT electrode 7, elastic waves are excited. As shown in FIG. 2, a pair of reflectors 8 and reflectors 9 are provided on both sides of the IDT electrode 7 in the elastic wave propagation direction on the piezoelectric substrate 2.
- the elastic wave device 1 is an elastic surface wave resonator.
- the elastic wave device according to the present invention is not limited to the elastic wave resonator, and may be a filter device or a multiplexer having an elastic wave resonator.
- the IDT electrode 7 has a first bus bar 16, a second bus bar 17, a plurality of first electrode fingers 18, and a plurality of second electrode fingers 19.
- the first bus bar 16 and the second bus bar 17 face each other.
- One end of each of the plurality of first electrode fingers 18 is connected to the first bus bar 16.
- One end of each of the plurality of second electrode fingers 19 is connected to the second bus bar 17.
- the plurality of first electrode fingers 18 and the plurality of second electrode fingers 19 are interleaved with each other.
- the elastic wave propagation direction is defined as the x direction.
- the direction in which the first electrode finger 18 and the second electrode finger 19 extend is defined as the first direction y.
- the x-direction and the y-direction are orthogonal to each other.
- the IDT electrode 7 has a main electrode layer and two adhesion layers. From the piezoelectric layer 6 side, the adhesion layer, the main electrode layer, and the adhesion layer are laminated in this order.
- the main electrode layer is the dominant electrode layer in the excitation of elastic waves.
- the two close contact layers are both Ti layers, and the main electrode layer is an Al layer.
- the material of the IDT electrode 7 is not limited to the above. Alternatively, the IDT electrode 7 may consist only of the main electrode layer. The same material as the IDT electrode 7 can be used for the reflector 8 and the reflector 9.
- the piezoelectric layer 6 is a lithium tantalate layer. More specifically, the piezoelectric material used in the piezoelectric layer 6 is 55 ° Y-cut X propagation LiTaO 3 . The material and cut angle of the piezoelectric layer 6 are not limited to the above.
- the low sound velocity film 5 is a relatively low sound velocity film. More specifically, the sound velocity of the bulk wave propagating in the bass velocity film 5 is lower than the sound velocity of the bulk wave propagating in the piezoelectric layer 6.
- the bass velocity film 5 of the present embodiment is a silicon oxide film. Silicon oxide is represented by SiO a. a is an arbitrary positive number. The silicon oxide constituting the bass velocity film 5 of the present embodiment is SiO 2 .
- the material of the bass velocity film 5 is not limited to the above, and is, for example, a material containing glass, silicon nitride, lithium oxide, tantalum pentoxide, or a compound obtained by adding fluorine, carbon, or boron to silicon oxide as a main component. Can also be used.
- the hypersonic material layer is the hypersonic film 4.
- the hypersonic material layer is a relatively hypersonic layer. More specifically, the sound velocity of the bulk wave propagating in the hypersonic material layer is higher than the sound velocity of the elastic wave propagating in the piezoelectric layer 6.
- the hypersonic film 4 as the hypersonic material layer is a silicon nitride film.
- the silicon nitride constituting the hypersonic film 4 of the present embodiment is SiN.
- the material of the treble velocity film 4 is not limited to the above, and for example, silicon, aluminum oxide, silicon carbide, silicon nitride, sapphire, lithium tantalate, lithium niobate, crystal, alumina, zirconia, cordierite, mulite, etc.
- a medium containing the above materials as a main component such as steatite, forsterite, magnesia, DLC (diamond-like carbon) film, or diamond, can also be used.
- the support substrate 3 is a silicon substrate.
- the material of the support substrate 3 is not limited to the above, and for example, piezoelectric materials such as aluminum oxide, lithium tantalate, lithium niobate, and crystal, alumina, sapphire, magnesia, silicon nitride, aluminum nitride, silicon carbide, zirconia, and the like.
- Various ceramics such as cozilite, mulite, steatite, and forsterite, dielectrics such as diamond and glass, semiconductors or resins such as gallium nitride can also be used.
- the piezoelectric substrate 2 has a structure in which the hypersonic film 4, the hypersonic film 5 and the piezoelectric layer 6 as the hypersonic material layer are laminated in this order. Thereby, the energy of the elastic wave can be effectively confined on the piezoelectric layer 6 side.
- the crossing region A has a central region C, a first edge region E1 and a second edge region E2.
- the central region C is located on the central side in the y direction in the crossing region A.
- the first edge region E1 and the second edge region E2 are arranged on both sides of the central region C in the y direction. More specifically, the first edge region E1 is arranged on the first bus bar 16 side of the central region C.
- the second edge region E2 is arranged on the second bus bar 17 side of the central region C.
- the first edge region E1 and the second edge region E2 may be simply referred to as an edge region.
- the IDT electrode 7 has a first gap region G1 and a second gap region G2.
- the first gap region G1 is located between the first edge region E1 and the first bus bar 16.
- the second gap region G2 is located between the second edge region E2 and the second bus bar 17.
- the first gap region G1 only the first electrode finger 18 of the first electrode finger 18 and the second electrode finger 19 is provided.
- the speed of sound in the first gap region G1 is higher than the speed of sound in the central region C.
- the second gap region G2 only the second electrode finger 19 of the first electrode finger 18 and the second electrode finger 19 is provided.
- the speed of sound in the second gap region G2 is higher than the speed of sound in the central region C.
- the high sound velocity region is configured in the first gap region G1 and the second gap region G2.
- one dielectric film 15A is provided between the piezoelectric substrate 2, all the first electrode fingers 18, and all the second electrode fingers 19. There is.
- the dielectric film 15A has a band-like shape.
- the dielectric film 15A is also provided on the piezoelectric substrate 2 between all the electrode fingers. Further, the dielectric film 15A is also provided between the piezoelectric substrate 2 and the reflector 8 and the reflector 9.
- one dielectric film 15B is provided between the piezoelectric substrate 2 and all the first electrode fingers 18 and all the second electrode fingers 19. There is.
- the dielectric film 15B has a band-like shape.
- the dielectric film 15B is also provided on the piezoelectric substrate 2 between all the electrode fingers.
- the dielectric film 15B is also provided between the piezoelectric substrate 2 and the reflector 8 and the reflector 9.
- the dielectric film 15A and the dielectric film 15B do not have to be provided between the piezoelectric substrate 2 and the reflector 8 and the reflector 9.
- the configuration is not limited to the configuration in which one dielectric film 15A is provided between the piezoelectric substrate 2 and all the electrode fingers of the IDT electrode 7.
- the elastic wave device 1 may have a plurality of dielectric films 15A.
- the dielectric film 15A may be provided between the piezoelectric substrate 2 and at least one electrode finger of the IDT electrode 7.
- the dielectric film 15A does not have to be provided in the portion between the plurality of electrode fingers on the piezoelectric substrate 2.
- it is preferable that the dielectric films 15A are provided between the piezoelectric substrate 2 and all the electrode fingers.
- the elastic wave device 1 may have a plurality of dielectric films 15B.
- the dielectric film 15B may be provided between the piezoelectric substrate 2 and at least one electrode finger of the IDT electrode 7.
- the dielectric film 15B does not have to be provided in the portion between the plurality of electrode fingers on the piezoelectric substrate 2.
- the dielectric film 15A and the dielectric film 15B are made of at least one dielectric selected from the group consisting of hafnium oxide, niobium oxide, tungsten oxide and cerium oxide.
- the speed of sound in the first edge region E1 and the second edge region E2 is Ve
- Ve ⁇ Vc can be set.
- the bass sound region is more reliably configured in the first edge region E1 and the second edge region E2.
- the details of the effect that can be Ve ⁇ Vc, that is, Ve / Vc ⁇ 1 are shown below.
- the behavior of changes in sound velocity was compared in the elastic wave device having the configuration of the first embodiment, the first comparative example, and the reference example. More specifically, the behavior of the change in sound velocity with respect to the change in the film thickness of the dielectric film was compared.
- the behavior of the speed of sound was investigated in each of the cases where the dielectric film was an HfO 2 film, an Nb 2 O 5 film, a WO 3 film, and a CeO 2 film.
- the dielectric used for the dielectric film is different from that of the first embodiment.
- the behavior of the speed of sound was investigated in each of the cases where the dielectric film was a SiO 2 film and a SiN film.
- the reference example differs from the first embodiment in that the dielectric film is provided on the IDT electrode and the dielectric film is the SiO 2 film. The speed of sound was measured even when the dielectric film was not provided.
- the design parameters of the elastic wave device having the configuration of the first embodiment and the elastic wave device of the first comparative example and the reference example are as follows.
- Support substrate Material ... Si Hypersonic film; Material: SiN, Thickness: 300 nm Bass velocity film; Material: SiO 2 , Thickness: 300 nm Piezoelectric layer; Material: 55 ° Y-cut X propagation LiTaO 3 , Thickness: 400 nm
- Layer structure of IDT electrode Layer structure: Ti layer / Al layer / Ti layer from the piezoelectric layer side, thickness: 12 nm / 100 nm / 4 nm from the piezoelectric layer side IDT electrode wavelength; 2 ⁇ m IDT electrode duty ratio; 0.5 Dielectric film; Thickness: 5 nm or more, 65 nm or less, or 5 nm or more, 55 nm or less, changed in 10 nm increments.
- FIG. 3 is a diagram showing the relationship between the thickness of the dielectric film and the speed of sound in the elastic wave device of the first comparative example and the reference example.
- FIG. 4 is a diagram showing the relationship between the thickness of the dielectric film and the speed of sound in the elastic wave device according to the first embodiment.
- the speed of sound is higher than when the dielectric film is not provided. Further, the thicker the dielectric film, the higher the speed of sound. Similarly, when the dielectric film is a SiN film, the thicker the dielectric film, the higher the speed of sound. Even if the dielectric film is a SiO 2 film as in the reference example, when the dielectric film is provided on the IDT electrode, the thicker the dielectric film, the lower the speed of sound.
- the dielectric film 15A and the dielectric film 15B are the HfO 2 film, the Nb 2 O 5 film, the WO 3 film, and the CeO 2 film. It can be seen that the thicker the dielectric film 15A and the dielectric film 15B, the lower the sound velocity. As described above, in the first embodiment, the low sound velocity region can be more reliably configured in the first edge region E1 and the second edge region E2.
- the low sound velocity region can be more reliably arranged outside the central region C in the y direction. Further, the high sound velocity region is located outside the low sound velocity region. Therefore, the piston mode can be established more reliably. Therefore, the transverse mode can be suppressed more reliably.
- the present inventor has found that the suppression of the transverse mode depends on the dielectric constants of the dielectric film 15A and the dielectric film 15B. The details will be described below.
- the impedance frequency characteristics were compared by simulation.
- an HfO 2 film was used as the dielectric film.
- the elastic constant and density of the dielectric film were defined as the elastic constant and density of the HfO 2 film
- the dielectric constant of the dielectric film was defined as the dielectric constant of the SiO 2 film.
- the design parameters of the elastic wave device having the configuration of the first embodiment and the elastic wave device of the second comparative example are the same as in the case of comparing the behavior of the sound velocity except for the thickness of the dielectric film.
- the thickness of the dielectric film was 30 nm.
- FIG. 5 is a diagram showing impedance frequency characteristics in the first embodiment.
- FIG. 6 is a diagram showing impedance frequency characteristics in the second comparative example.
- the transverse mode is suppressed.
- the arrow B in FIG. 6 in the second comparative example, a large spurious due to the transverse mode is generated.
- the elastic constant and density of the dielectric film are the same as the elastic constant and density of the HfO 2 film, if the dielectric constant of the dielectric film is the same as the dielectric constant of the SiO 2 film, it is difficult to suppress the transverse mode. I understand. As described above, it can be seen that the suppression of the transverse mode depends on the dielectric constant of the dielectric film.
- ⁇ be the wavelength defined by the electrode finger pitch of the IDT electrode.
- the electrode finger pitch refers to the distance between the center of the electrode fingers in the adjacent electrode fingers. Specifically, it refers to the distance connecting the center points in the x direction of each of the adjacent electrode fingers.
- the electrode finger pitch is assumed to be the average value of the distances between the center of the electrode fingers.
- the thickness of the dielectric film is t_D [ ⁇ ]
- the dielectric constant of the dielectric film is ⁇
- the density of the dielectric film is d [kg / m 3 ]
- the Young ratio of the dielectric film is Y [GPa]
- the piezoelectric material is the thickness of the dielectric film.
- the thickness of the layer is t_LT [ ⁇ ]
- the thickness of the main electrode layer of the IDT electrode is t_Al [ ⁇ ]
- the speed of sound in the central region is Vc
- the speed of sound in the pair of edge regions is Ve.
- Ve / Vc was calculated under each condition by changing each of the above parameters.
- the design parameters of the elastic wave device are as follows. In the following, the unit of each of the above parameters may be omitted.
- Support substrate Material ... Si Hypersonic film; Material: SiN, Thickness: 300 nm Bass velocity film; Material: SiO 2 , Thickness: 300 nm Piezoelectric layer; Material: 55 ° Y-cut X propagation LiTaO 3 , Thickness: t_LT Layer structure of IDT electrode; Layer structure: Ti layer / Al layer / Ti layer from the piezoelectric layer side, thickness: 12 nm / t_Al / 4 nm from the piezoelectric layer side IDT electrode wavelength; 2 ⁇ m IDT electrode duty ratio; 0.5 The density of the dielectric film d; 2kg / m 3 or more, in 8 kg / m 3 or less of the range was varied 2 kg / m 3 increments.
- the Young's modulus of the dielectric film was changed in 70 GPa increments in the range of 70 GPa or more and 280 GPa or less.
- the dielectric constant of the dielectric film was changed in increments of 5 in the range of ⁇ ; 5 or more and 35 or less.
- the thickness of the dielectric film t_D was changed in 0.0025 ⁇ increments in the range of 0.0025 ⁇ or more and 0.0175 ⁇ or less.
- the thickness of the piezoelectric layer t_LT was changed in 0.05 ⁇ increments in the range of 0.15 ⁇ or more and 0.3 ⁇ or less.
- the thickness of the Al layer t_Al was changed in 0.0125 ⁇ increments in the range of 0.05 ⁇ or more and 0.075 ⁇ or less.
- t_D [ ⁇ ], ⁇ , d [kg / m 3 ], Y [GPa], t_LT [ ⁇ ] and t_Al [ ⁇ ] may be values such that Ve / Vc derived by Equation 1 is less than 1. .. Thereby, the pair of edge regions can be surely set as the low sound velocity region. As a result, the piston mode can be established and the transverse mode can be suppressed.
- the dielectric film 15A and the dielectric film 15B shown in FIG. 2 are composed of hafnium oxide, niobium oxide, and oxidation. It does not have to contain tungsten and cerium oxide. However, it is preferable that the dielectric film 15A and the dielectric film 15B are made of at least one dielectric selected from the group consisting of hafnium oxide, niobium oxide, tungsten oxide and cerium oxide.
- the piezoelectric layer 6 is indirectly provided on the hypersonic film 4 via the hypersonic film 5.
- the configuration of the piezoelectric substrate 2 is not limited to the above.
- first to third modifications of the first embodiment in which only the configuration of the piezoelectric substrate is different from that of the first embodiment, will be shown.
- the transverse mode can be suppressed more reliably as in the first embodiment.
- the energy of elastic waves can be effectively confined to the piezoelectric layer 6 side.
- the piezoelectric substrate 22A has a support substrate 3, a hypersonic film 4, and a piezoelectric layer 6.
- the piezoelectric layer 6 is directly provided on the hypersonic film 4 as the hypersonic material layer.
- the hypersonic material layer is the hypersonic support substrate 24.
- the piezoelectric substrate 22B has a hypersonic support substrate 24, a low sound velocity film 5, and a piezoelectric layer 6.
- the hypersonic film 5 is provided on the hypersonic support substrate 24.
- Examples of the material of the high-pitched sound support substrate 24 include aluminum oxide, silicon carbide, silicon nitride, silicon nitride, silicon, sapphire, lithium tantrate, lithium niobate, crystal, alumina, zirconia, cordierite, mulite, and steatite. , Forsterite, magnesia, DLC film, diamond, or the like, or a medium containing the above-mentioned material as a main component can be used.
- the piezoelectric substrate 22C has a hypersonic support substrate 24 and a piezoelectric layer 6.
- the piezoelectric layer 6 is directly provided on the hypersonic support substrate 24 as the hypersonic material layer.
- the piezoelectric substrate 22D is composed of only the piezoelectric layer.
- the piezoelectric substrate 22D is a piezoelectric substrate.
- the transverse mode can be suppressed more reliably, as in the first embodiment.
- FIG. 11 is a front sectional view of the elastic wave device according to the second embodiment.
- the piezoelectric substrate 32 has an acoustic reflection film 37. More specifically, the piezoelectric substrate 32 has a support substrate 3, an acoustic reflection film 37, and a piezoelectric layer 6. An acoustic reflection film 37 is provided on the support substrate 3. The piezoelectric layer 6 is provided on the acoustic reflection film 37. Except for the above points, the elastic wave device 31 of the present embodiment has the same configuration as the elastic wave device 1 of the first embodiment.
- the acoustic reflection film 37 is a laminate of a plurality of acoustic impedance layers. More specifically, the acoustic reflection film 37 has a plurality of low acoustic impedance layers and a plurality of high acoustic impedance layers.
- the low acoustic impedance layer is a layer having a relatively low acoustic impedance.
- the plurality of low acoustic impedance layers of the acoustic reflection film 37 are a low acoustic impedance layer 35a and a low acoustic impedance layer 35b.
- the high acoustic impedance layer is a layer having a relatively high acoustic impedance.
- the plurality of high acoustic impedance layers of the acoustic reflection film 37 are a high acoustic impedance layer 34a and a high acoustic impedance layer 34b.
- the low acoustic impedance layer and the high acoustic impedance layer are alternately laminated.
- the low acoustic impedance layer 35a is a layer located closest to the piezoelectric layer 6 in the acoustic reflection film 37.
- the acoustic reflection film 37 has two layers each of a low acoustic impedance layer and a high acoustic impedance layer. However, the acoustic reflection film 37 may have at least one low acoustic impedance layer and one high acoustic impedance layer.
- the material of the low acoustic impedance layer for example, silicon oxide or aluminum can be used.
- a metal such as platinum or tungsten or a dielectric material such as aluminum nitride or silicon nitride can be used.
- the elastic wave device 31 Since the elastic wave device 31 has the acoustic reflection film 37, the energy of the elastic wave can be effectively confined to the piezoelectric layer 6 side.
- the electrode structure on the piezoelectric substrate 32 in this embodiment is the same as that in the first embodiment. Therefore, the speed of sound can be more reliably lowered in the pair of edge regions, and the piston mode can be more reliably established. Therefore, the transverse mode can be suppressed more reliably.
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Abstract
Description
高音速膜;材料…SiN、厚み…300nm
低音速膜;材料…SiO2、厚み…300nm
圧電体層;材料…55°YカットX伝搬LiTaO3、厚み…400nm
IDT電極の層構成;層構成…圧電体層側からTi層/Al層/Ti層、厚み…圧電体層側から12nm/100nm/4nm
IDT電極の波長;2μm
IDT電極のデューティ比;0.5
誘電体膜;厚み…5nm以上、65nm以下の範囲、または5nm以上、55nm以下の範囲において、10nm刻みで変化させた。
高音速膜;材料…SiN、厚み…300nm
低音速膜;材料…SiO2、厚み…300nm
圧電体層;材料…55°YカットX伝搬LiTaO3、厚み…t_LT
IDT電極の層構成;層構成…圧電体層側からTi層/Al層/Ti層、厚み…圧電体層側から12nm/t_Al/4nm
IDT電極の波長;2μm
IDT電極のデューティ比;0.5
誘電体膜の密度d;2kg/m3以上、8kg/m3以下の範囲において、2kg/m3刻みで変化させた。
誘電体膜のヤング率Y;70GPa以上、280GPa以下の範囲において、70GPa刻みで変化させた。
誘電体膜の誘電率ε;5以上、35以下の範囲において、5刻みで変化させた。
誘電体膜の厚みt_D;0.0025λ以上、0.0175λ以下の範囲において、0.0025λ刻みで変化させた。
圧電体層の厚みt_LT;0.15λ以上、0.3λ以下の範囲において、0.05λ刻みで変化させた。
Al層の厚みt_Al;0.05λ以上、0.075λ以下の範囲において、0.0125λ刻みで変化させた。
2…圧電性基板
3…支持基板
4…高音速膜
5…低音速膜
6…圧電体層
7…IDT電極
8,9…反射器
15A,15B…誘電体膜
16…第1のバスバー
17…第2のバスバー
18…第1の電極指
19…第2の電極指
22A~22D…圧電性基板
24…高音速支持基板
31…弾性波装置
32…圧電性基板
34a,34b…高音響インピーダンス層
35a,35b…低音響インピーダンス層
37…音響反射膜
A…交叉領域
C…中央領域
E1,E2…第1,第2のエッジ領域
G1,G2…第1,第2のギャップ領域
Claims (10)
- 圧電性基板と、
前記圧電性基板上に設けられており、複数の電極指を有するIDT電極と、
を備え、
前記IDT電極の隣り合う電極指が弾性波伝搬方向において重なり合っている部分が交叉領域であり、前記交叉領域が、前記複数の電極指が延びる方向における中央側に位置している中央領域と、前記中央領域の前記複数の電極指が延びる方向両側に配置されている一対のエッジ領域と、を有し、
前記一対のエッジ領域において、前記圧電性基板と前記複数の電極指との間に設けられている誘電体膜をさらに備え、
前記誘電体膜が、酸化ハフニウム、酸化ニオブ、酸化タングステン及び酸化セリウムからなる群から選択された少なくとも1種の誘電体からなる、弾性波装置。 - 圧電体層を有する圧電性基板と、
前記圧電性基板上に設けられており、複数の電極指を有するIDT電極と、
を備え、
前記IDT電極の隣り合う電極指が弾性波伝搬方向において重なり合っている部分が交叉領域であり、前記交叉領域が、前記複数の電極指が延びる方向における中央側に位置している中央領域と、前記中央領域の前記複数の電極指が延びる方向両側に配置されている一対のエッジ領域と、を有し、
前記一対のエッジ領域において、前記圧電性基板と前記複数の電極指との間に設けられている誘電体膜をさらに備え、
前記圧電体層がタンタル酸リチウム層であり、
前記IDT電極が主電極層を有し、前記主電極層がAl層であり、
前記IDT電極の電極指ピッチにより規定される波長をλ[μm]、前記誘電体膜の厚みをt_D[λ]、前記誘電体膜の誘電率をε、前記誘電体膜の密度をd[kg/m3]、前記誘電体膜のヤング率をY[GPa]、前記圧電体層の厚みをt_LT[λ]、前記IDT電極の前記主電極層の厚みをt_Al[λ]とし、前記中央領域における音速をVc、前記一対のエッジ領域における音速をVeとしたときに、前記t_D[λ]、前記ε、前記d[kg/m3]、前記Y[GPa]、前記t_LT[λ]及び前記t_Al[λ]が、下記の式1により導出されるVe/Vcが1未満となる値である、弾性波装置。
- 前記一対のエッジ領域の、前記複数の電極指が延びる方向における外側に、一対の高音速領域が配置されており、
前記一対の高音速領域における音速が、前記中央領域における音速よりも高い、請求項1または2に記載の弾性波装置。 - 前記圧電性基板が圧電体層のみからなる圧電基板である、請求項1~3のいずれか1項に記載の弾性波装置。
- 前記圧電性基板が、高音速材料層と、前記高音速材料層上に直接的または間接的に設けられている圧電体層と、を有し、
前記高音速材料層を伝搬するバルク波の音速が、前記圧電体層を伝搬する弾性波の音速よりも高い、請求項1~3のいずれか1項に記載の弾性波装置。 - 前記圧電性基板が、前記高音速材料層と前記圧電体層との間に設けられている、低音速膜を有し、
前記低音速膜を伝搬するバルク波の音速が、前記圧電体層を伝搬するバルク波の音速よりも低い、請求項5に記載の弾性波装置。 - 前記高音速材料層が高音速支持基板である、請求項5または6に記載の弾性波装置。
- 前記圧電性基板が支持基板を有し、
前記高音速材料層が、前記支持基板上に設けられている高音速膜である、請求項5または6に記載の弾性波装置。 - 前記圧電性基板が音響反射膜と、前記音響反射膜上に設けられている圧電体層と、を有し、
前記音響反射膜が、音響インピーダンスが相対的に高い高音響インピーダンス層と、音響インピーダンスが相対的に低い低音響インピーダンス層と、を有し、
前記高音響インピーダンス層と前記低音響インピーダンス層とが交互に積層されている、請求項1~3のいずれか1項に記載の弾性波装置。 - 前記圧電体層がタンタル酸リチウム層である、請求項4~9のいずれか1項に記載の弾性波装置。
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WO2021039038A1 (ja) * | 2019-08-29 | 2021-03-04 | 株式会社村田製作所 | 弾性波装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022224862A1 (ja) * | 2021-04-19 | 2022-10-27 | 株式会社村田製作所 | 弾性波装置 |
WO2024128164A1 (ja) * | 2022-12-12 | 2024-06-20 | 京セラ株式会社 | 弾性波装置、フィルタ、および通信装置 |
Also Published As
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CN115428333A (zh) | 2022-12-02 |
KR20220158788A (ko) | 2022-12-01 |
US20230037955A1 (en) | 2023-02-09 |
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