WO2021213144A1 - 有机发光二极管器件及其制作方法、和显示面板 - Google Patents
有机发光二极管器件及其制作方法、和显示面板 Download PDFInfo
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- WO2021213144A1 WO2021213144A1 PCT/CN2021/083959 CN2021083959W WO2021213144A1 WO 2021213144 A1 WO2021213144 A1 WO 2021213144A1 CN 2021083959 W CN2021083959 W CN 2021083959W WO 2021213144 A1 WO2021213144 A1 WO 2021213144A1
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- organic light
- electrode
- active metal
- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
- 230000008020 evaporation Effects 0.000 claims description 76
- 238000001704 evaporation Methods 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 25
- 239000007769 metal material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- 239000011777 magnesium Substances 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 10
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 8
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052790 beryllium Inorganic materials 0.000 claims description 8
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052792 caesium Inorganic materials 0.000 claims description 8
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052700 potassium Inorganic materials 0.000 claims description 8
- 239000011591 potassium Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 184
- 239000002019 doping agent Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- ONFSYSWBTGIEQE-UHFFFAOYSA-N n,n-diphenyl-4-[2-[4-[2-[4-(n-phenylanilino)phenyl]ethenyl]phenyl]ethenyl]aniline Chemical compound C=1C=C(C=CC=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=CC=1C=CC(C=C1)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ONFSYSWBTGIEQE-UHFFFAOYSA-N 0.000 description 1
- -1 or Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Definitions
- This application relates to the field of display technology, and in particular to an organic light emitting diode device, a manufacturing method thereof, and a display panel.
- OLED Organic Light-Emitting Diode
- OLED has the characteristics of self-luminescence, wide viewing angle, wide color gamut, fast response speed, high luminous efficiency, and low working voltage, and is widely used in display and other fields.
- an embodiment of the present application provides an organic light emitting diode device, including a first electrode, a second electrode, an organic light emitting layer located between the first electrode and the second electrode, and an organic light emitting diode device located between the first electrode and the second electrode.
- the resistance-reducing conductive metal layer includes an active metal layer.
- the active metal layer is made of an active metal material, and the active metal material includes at least one of lithium, sodium, potassium, beryllium, calcium, magnesium, cesium, and barium.
- the first electrode is formed of indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum-doped zinc oxide (ZAO).
- ITO indium tin oxide
- IZO indium zinc oxide
- ZAO aluminum-doped zinc oxide
- the contact layer further includes an electron transport layer and a doped layer located between the electron transport layer and the active metal layer, and the doped layer is composed of an active metal material and an electron transport material.
- the active metal material in the doped layer includes at least one of lithium, sodium, potassium, beryllium, calcium, magnesium, cesium, and barium.
- the active metal layer and the electron transport layer have the same thickness in a direction perpendicular to the second electrode.
- the thickness ratio of the active metal layer and the doped layer in a direction perpendicular to the second electrode is greater than 1:18.
- the organic light-emitting layer includes a first blue light-emitting layer, a yellow light-emitting layer, and a second blue light-emitting layer that are sequentially stacked along the second electrode toward the first electrode.
- a first charge generation layer is provided between the light emitting layer and the yellow light emitting layer, and a second charge generation layer is provided between the yellow light emitting layer and the second blue light emitting layer.
- the conductivity of the resistance-reducing conductive metal layer is higher than the conductivity of the first electrode.
- an embodiment of the present application also provides a display panel including the organic light emitting diode device as described above.
- an embodiment of the present application also provides a manufacturing method of an organic light emitting diode device, including:
- the contact layer including a resistance-reducing conductive metal layer on a side away from the organic light-emitting layer;
- a second electrode is formed on the resistance-reducing conductive metal layer.
- the resistance-reducing conductive metal layer includes an active metal layer.
- the forming a contact layer on the organic light-emitting layer includes:
- the first evaporation source and the second evaporation source are used for simultaneous evaporation.
- the evaporation regions of the first evaporation source and the second evaporation source partially overlap, so as to simultaneously form an electron transport layer and doping on the organic light-emitting layer.
- an active metal layer wherein the evaporation material of the first evaporation source is an electron transport material, and the evaporation material of the second evaporation source is an active metal material.
- the active metal material includes at least one of lithium, sodium, potassium, beryllium, calcium, magnesium, cesium, and barium.
- first evaporation area of the first evaporation source partially overlaps with the second evaporation area of the second evaporation source, and the overlap ratio is less than 90% of the total evaporation area, and the total evaporation area is the first evaporation area.
- FIG. 1 is a schematic structural diagram of an organic light emitting diode device provided by some embodiments of the application.
- FIG. 2 is a schematic structural diagram of an organic light emitting diode device provided by some embodiments of the application.
- FIG. 3 is a schematic diagram of the positions of the first vapor deposition area and the second vapor deposition area in the manufacturing process of the organic light emitting diode device provided by some embodiments of the application.
- An embodiment of the present application provides an organic light emitting diode device, as shown in FIG. 1, comprising a first electrode 110, a second electrode 120, and an organic light emitting layer 130 located between the first electrode 110 and the second electrode 120 , And a contact layer 140 located between the organic light emitting layer 130 and the first electrode 110.
- the contact layer 140 includes an active metal layer 141 connected to the first electrode 110.
- the active metal layer is connected to the first electrode. Because the active metal has excellent conductivity, it can reduce the resistance of the electrical signal on the first electrode during transmission (therefore, the active metal layer can also be called To reduce the resistance of the conductive metal layer), thereby reducing the voltage drop generated by the electrical signal on the first electrode, and improving the luminous efficiency of the organic light-emitting layer. Therefore, the technical solution provided by the present application can improve the luminous efficiency and lifetime of the organic light emitting diode.
- the first electrode and the second electrode make the organic light-emitting layer emit light by providing a driving voltage or a driving current.
- the first electrode can be a cathode that provides electrons, and can be formed of a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-doped zinc oxide ( ZAO) and other transparent conductive oxides (TCO), but not limited to this.
- ITO indium tin oxide
- IZO indium zinc oxide
- ZAO aluminum-doped zinc oxide
- TCO transparent conductive oxides
- the second electrode can be a reflective anode that provides holes, and can be made of metals such as aluminum, magnesium, silver, nickel, chromium, palladium, platinum, gold, copper, or alloy materials of the above metals, or a composite of the above metals and ITO, IZO
- the structure is made, such as two layers of ITO and a silver metal layer located between the two layers of ITO, but it is not limited to this.
- the size of the display device becomes larger and larger, the size of the first electrode will also increase, which causes the resistance of the first electrode to increase, and a large voltage drop occurs during signal transmission, resulting in each organic
- the light-emitting efficiency of the light-emitting diode device is reduced.
- the light-emitting voltage of the organic light-emitting diode device can only be increased, but this increases the power consumption of the display device.
- the active metal layer is connected to the first electrode. Because the active metal layer has good conductivity, it can reduce the resistance of electrical signals on the first electrode and reduce the voltage drop generated on the first electrode. Therefore, the light-emitting efficiency of the organic light-emitting diode device is improved, so there is no need to increase the light-emitting voltage of the organic light-emitting diode device, and the power consumption of the display device is also saved.
- the above-mentioned active metal layer is made of active metal material, and the active metal material includes at least one of lithium, sodium, potassium, beryllium, calcium, magnesium, cesium, and barium.
- the active metal layer made of the above active metal has excellent conductivity and can reduce the resistance of the electrical signal on the first electrode connected to it during transmission, which is equivalent to reducing the resistance of the first electrode.
- the contact layer further includes an electron transport layer 142 and a doped layer 143 located between the electron transport layer 142 and the active metal layer 141.
- the doped layer 143 is made of an active metal material and an electron transport material. Together constitute.
- the electron transport layer 142 is composed of an electron transport material, and the electron transport material may be 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,3,5-tris(1-phenyl-1H- Benzimidazol-2-yl)benzene (TPBI) and the like.
- the electron transport layer has a strong electron receiving ability.
- the doped layer has a certain degree of conductivity due to the active metal material, and at the same time, it also has an electron transport material, so it also has a certain electron receiving ability.
- the organic light emitting diode device further includes a hole transport layer 150 between the organic light emitting layer and the second electrode and a hole injection layer 160 between the hole transport layer and the second electrode, so that electrons and holes can be
- the organic light-emitting layer generates excitons due to the Coulomb effect, which are divided into singlet and triplet states. The excitons return from the excited state to the ground state while releasing photons to emit light, and transition from the triplet excited state to the ground state to emit phosphorescence.
- the active metal layer and the electron transport layer have the same thickness in a direction perpendicular to the second electrode.
- the above-mentioned active metal layer, electron transport layer and doped layer can be formed together, for example: dislocation evaporation is performed simultaneously by two evaporation sources to form the doped layer corresponding to the overlap evaporation area and the active metal layer on both sides of the doped layer And the electron transport layer.
- the thickness ratio of the active metal layer and the doped layer in a direction perpendicular to the second electrode is greater than 1:18.
- the ratio of the thickness of the active metal layer in the direction perpendicular to the second electrode to the thickness of the doped layer in the direction perpendicular to the second electrode is designed to be greater than 1:18, which can improve the activity
- the thickness ratio of the metal layer in the contact layer ensures the effect of reducing the resistance of the first electrode.
- the active metal layer, the doped layer, and the electron transport layer are made at the same time, it can be understood as three regions where the contact layer is stacked on each other in a direction perpendicular to the base substrate.
- the organic light-emitting layer includes a first blue light-emitting layer 131, a yellow light-emitting layer 133, and a second blue light-emitting layer that are sequentially stacked along the second electrode toward the first electrode.
- Layer 135 a first charge generation layer 132 is provided between the first blue light-emitting layer 131 and the yellow light-emitting layer 133, and a first charge generation layer 132 is provided between the yellow light-emitting layer 133 and the second blue light-emitting layer 135.
- the second charge generation layer 134 is provided between the first blue light-emitting layer 131 and the yellow light-emitting layer 133.
- the first blue light-emitting layer, the yellow light-emitting layer and the second blue light-emitting layer may all adopt a host-guest doped structure to achieve light emission.
- the first blue light-emitting layer and the second blue light-emitting layer use 1%-10% of the blue dopant as the guest material to be mixed into the organic light-emitting layer accounted for more than 90% of the host material compound, the guest material is responsible for light emission ,
- the main material is to transfer energy and prevent triplet-triplet energy annihilation.
- the aforementioned blue dopant may be TBP, DSA-Ph, DB-1, DB-2, DB-3, and the like.
- the yellow light-emitting layer adopts red dopants and green dopants as guest materials to be incorporated into the host material.
- the co-host method of the red dopant and the green dopant is compared with that of the red dopant. In terms of separate doping of impurities and green dopants, it is easier to adjust the ratio of red light and green light, and the thickness of the organic light-emitting layer can be reduced.
- the first charge generation layer 132 and the second charge generation layer 134 are both functional layers that connect multiple light-emitting layers in series.
- the charge-generation layer is used to connect two sets of light-emitting layers to form an organic light-emitting layer to increase the voltage of the organic light-emitting diode.
- the structure and material composition of the charge generation layer can be Alq 3 co-doped with Cs 2 CO 3 as one layer, MoO 3 as the other layer, or Bphen as one layer, Li 2 O as one layer, PTCBI as one layer, NPB Co-doped with MoO 3 as a layer, or Bphen and Li as a layer, HAT-CN as a layer, or Li and Alq 3 as a layer, FeCl 3 and NPB as a layer, or , Mg and Alq 3 co-doped as a layer, F4TCNQ and m-MTDATA co-doped as a layer.
- Bphen and Li co-doped as a layer as an example, the thickness of Bphen can be The thickness of Li can be Or, the thickness of Bphen can be The thickness of Li can be
- An embodiment of the present application also provides a display panel, which includes the organic light emitting diode device as described above.
- the embodiment of the present application also provides a manufacturing method of an organic light emitting diode device, including:
- the contact layer Forming a contact layer on the organic light-emitting layer, the contact layer including an active metal layer on a side away from the organic light-emitting layer;
- a second electrode is formed on the active metal layer.
- the active metal layer is connected to the first electrode. Because the active metal has excellent conductivity, it can reduce the resistance of the electrical signal on the first electrode during transmission, thereby reducing the electrical signal on the first electrode.
- the voltage drop generated on the luminescent layer improves the luminous efficiency and lifespan of the organic light-emitting layer. Therefore, the technical solution provided by the present application can improve the luminous efficiency and lifetime of the organic light emitting diode.
- the first electrode and the second electrode make the organic light-emitting layer emit light by providing a driving voltage or a driving current.
- the first electrode can be a cathode that provides electrons, and can be formed of transparent conductive materials, such as transparent conductive oxides (TCO) including indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-doped zinc oxide (ZAO), etc. , But not limited to this.
- TCO transparent conductive oxides
- ITO indium tin oxide
- IZO indium zinc oxide
- ZAO aluminum-doped zinc oxide
- the second electrode can be a reflective anode that provides holes, and can be made of metals such as aluminum, magnesium, silver, nickel, chromium, palladium, platinum, gold, copper, or alloy materials of the above metals, or a composite of the above metals and ITO, IZO
- the structure is made, such as two layers of ITO and a silver metal layer located between the two layers of ITO, but it is not limited to this.
- the size of the display device becomes larger and larger, the size of the first electrode will also increase, which causes the resistance of the first electrode to increase, and a large voltage drop occurs during signal transmission, resulting in each organic
- the light-emitting efficiency of the light-emitting diode device is reduced.
- the light-emitting voltage of the organic light-emitting diode device can only be increased, but this increases the power consumption of the display device.
- the active metal layer is connected to the first electrode. Because the active metal layer has good conductivity, it can reduce the resistance of electrical signals on the first electrode and reduce the voltage drop generated on the first electrode. Therefore, the light-emitting efficiency of the organic light-emitting diode device is improved, so there is no need to increase the light-emitting voltage of the organic light-emitting diode device, and the power consumption of the display device is also saved.
- the above-mentioned active metal layer is made of active metal material, and the active metal material includes at least one of lithium, sodium, potassium, beryllium, calcium, magnesium, cesium, and barium.
- the active metal layer made of the above active metal has excellent conductivity and can reduce the resistance of the electrical signal on the first electrode connected to it during transmission, which is equivalent to reducing the resistance of the first electrode.
- the forming a contact layer on the organic light-emitting layer includes:
- the first evaporation source and the second evaporation source are used for simultaneous evaporation.
- the evaporation regions of the first evaporation source and the second evaporation source partially overlap, so as to simultaneously form an electron transport layer and doping on the organic light-emitting layer.
- an active metal layer wherein the evaporation material of the first evaporation source is an electron transport material, and the evaporation material of the second evaporation source is an active metal material.
- the contact layer is made by an evaporation process, wherein the contact layer includes an active metal layer, an electron transport layer, and a doped layer located between the active metal layer and the electron transport layer.
- the first evaporation source 301 uses the electron transport material as the evaporation material to vaporize the organic light-emitting layer
- the second evaporation source 302 uses the active metal layer as the evaporation material to vaporize the organic light-emitting layer.
- Carry out vapor deposition the first evaporation area of the first evaporation source 301 partially overlaps the second evaporation area of the second evaporation source 302.
- a doped layer is formed in the intersection area of the two evaporation areas.
- the remaining evaporation area of the evaporation source 301 forms an electron transport layer
- the remaining evaporation area of the second evaporation source 302 is used to form an active metal layer.
- the above-mentioned evaporation process may be performed in a vacuum environment.
- first evaporation area of the first evaporation source partially overlaps with the second evaporation area of the second evaporation source, and the overlap ratio is less than 90% of the total evaporation area, and the total evaporation area is the first evaporation area.
- the active metal layer and the doped layer can be in a direction perpendicular to the second electrode.
- the thickness ratio is greater than 1:18.
- the ratio of the thickness of the active metal layer in the direction perpendicular to the second electrode to the thickness of the doped layer in the direction perpendicular to the second electrode is designed to be greater than 1:18, which can improve the activity.
- the thickness ratio of the metal layer in the contact layer ensures the effect of reducing the resistance of the first electrode.
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Abstract
Description
电压(V) | 发光效率(cd/A) | 寿命T95(h) | |
相关技术 | 13.35 | 50.6 | 10 |
本申请实施例 | 12.99 | 56.0 | 40 |
Claims (16)
- 一种有机发光二极管器件,包括:第一电极;第二电极;位于所述第一电极和所述第二电极之间的有机发光层;以及位于所述有机发光层和所述第一电极之间的接触层;其中,所述接触层包括与所述第一电极连接的降阻导电金属层。
- 根据权利要求1所述的有机发光二极管器件,其中,所述降阻导电金属层包括活泼金属层。
- 根据权利要求2所述的有机发光二极管器件,其中,所述活泼金属层由活泼金属材料制成,所述活泼金属材料包括锂、钠、钾、铍、钙、镁、铯、钡中的至少一种。
- 根据权利要求3所述的有机发光二极管器件,其中,所述第一电极由氧化铟锡(ITO)、氧化铟锌(IZO)或掺铝氧化锌(ZAO)形成。
- 根据权利要求2所述的有机发光二极管器件,其中,所述接触层还包括电子传输层和位于所述电子传输层和所述活泼金属层之间的掺杂层,所述掺杂层由活泼金属材料和电子传输材料共同构成。
- 根据权利要求5所述的有机发光二极管器件,其中,所述掺杂层中的活泼金属材料包括锂、钠、钾、铍、钙、镁、铯、钡中的至少一种。
- 根据权利要求5所述的有机发光二极管器件,其中,所述活泼金属层和所述电子传输层在垂直于所述第二电极的方向上的厚度相等。
- 根据权利要求5所述的有机发光二极管器件,其中,所述活泼金属层与所述掺杂层在垂直于所述第二电极的方向上的厚度比大于1:18。
- 根据权利要求1所述的有机发光二极管器件,其中,所述有机发光层包括沿所述第二电极向所述第一电极方向叠设的第一蓝色发光层、黄色发光层和第二蓝色发光层,所述第一蓝色发光层和所述黄色发光层之间设有第一电荷生成层,所述黄色发光层和所述第二蓝色发光层之间设有第二电荷生成层。
- 根据权利要求1所述的有机发光二极管器件,其中,所述降阻导电金属层的导电率高于所述第一电极的导电率。
- 一种显示面板,包括如权利要求1-10中任一项所述的有机发光二极管器件。
- 一种有机发光二极管器件的制作方法,包括:形成第一电极;在所述第一电极上形成有机发光层;在所述有机发光层上形成接触层,所述接触层包括远离所述有机发光层一侧的降阻导电金属层;在所述降阻导电金属层上形成第二电极。
- 根据权利要求12所述的方法,其中,所述降阻导电金属层包括活泼金属层。
- 根据权利要求13所述的方法,其中,所述在所述有机发光层上形成接触层,包括:利用第一蒸发源和第二蒸发源同时进行蒸镀,所述第一蒸发源和所述第二蒸发源的蒸发区域部分重叠,以在所述有机发光层上同时形成电子传输层、掺杂层和活泼金属层,其中,所述第一蒸发源的蒸镀材料为电子传输材料,所述第二蒸发源的蒸镀材料为活泼金属材料。
- 根据权利要求14所述的方法,其中,所述活泼金属材料包括锂、钠、钾、铍、钙、镁、铯、钡中的至少一种。
- 根据权利要求14所述的方法,其中,所述第一蒸发源的第一蒸发区域与所述第二蒸发源的第二蒸发区域部分重叠,重叠比例小于总蒸发区域的90%,所述总蒸发区域为所述第一蒸发区域和所述第二蒸发区域的并集。
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