WO2021210752A1

WO2021210752A1 - Semiconductor wafer transporting carrier comprising anti-slip pads

Info

Publication number: WO2021210752A1
Application number: PCT/KR2020/018287
Authority: WO
Inventors: 장동준; 이승원
Original assignee: 주식회사 글린트머티리얼즈
Priority date: 2020-04-16
Filing date: 2020-12-14
Publication date: 2021-10-21
Also published as: KR102342156B1; KR20210128550A

Abstract

A semiconductor wafer transporting carrier, according to one embodiment of the present invention, comprises: a frame which comprises an opening part and stores and transports a plurality of wafers which have been loaded therein through the opening part; one or more holders which provide support so that the plurality of wafers are stacked inside the frame so as to be spaced apart; attachment/detachment parts which enable the one or more holders to be spaced apart and attached/detached to/from the inside of the frame; and anti-slip pads mounted on the holders and providing support so as to prevent the wafers from breaking away, wherein, by disabling the wafers loaded inside from breaking away from the positions where same have been mounted, even during a sudden acceleration/deceleration of the carrier, damage to the wafers may be prevented, and particle generation caused by damage to the wafers may be prevented, and thus process stability may be improved.

Description

Carrier for transporting semiconductor wafers with anti-skid pads

The present invention relates to a carrier for transferring a wafer for solving a problem in which a wafer is detached or damaged during transfer of a semiconductor wafer.

In general, a semiconductor device is manufactured by forming a multilayer film according to a desired circuit pattern on a single crystal silicon wafer. To this end, a plurality of unit processes, such as a deposition process, a photolithography process, an oxidation process, an etching process, an ion implantation process, and a metal wiring process, are repeatedly performed according to the steps.

In order for each of these unit processes to proceed according to the procedure, after each process is completed, the wafer is moved to the equipment to be subjected to the subsequent process. At this time, the wafers may be individually transported, or a plurality of wafers may be loaded and transported in a carrier device called a cassette or FOUP.

The carrier on which the wafer is loaded performs rotational movement or vertical movement along sharp corners as well as high-speed linear movement along a preset path of the process line for subsequent processing.

The conventional carrier includes a holder capable of supporting and loading wafers by separating the wafers at regular intervals inside a frame constituting the entire body, and the wafer is loaded in a state where it is simply placed on the holder. The holder is generally made of metal, ceramic, or polymer, and has a smooth surface to have a small coefficient of friction with the smooth surface of the silicon wafer. When the carrier moves in an irregular path at high speed, the wafer is not fixed on the holder and constantly shakes. In this process, the wafer may be separated and damaged by impacting the inner wall of the carrier, or particles may be generated due to scratches and the like, thereby contaminating the semiconductor manufacturing line.

SUMMARY OF THE INVENTION An object of the present invention is to provide a carrier for transporting semiconductor wafers to solve the problem that a wafer loaded in a carrier is separated and damaged during a wafer transport process for a subsequent process during a semiconductor manufacturing process.

A semiconductor wafer transport carrier according to an embodiment of the present invention includes an opening, a frame for storing and transporting a plurality of wafers introduced through the opening, and at least one supporting the plurality of wafers to be stacked spaced apart inside the frame It may include a holder, a detachable part for separating the one or more holders to be detached from the inside of the frame, and an anti-slip pad mounted on the holder to support the wafer to prevent detachment.

In the carrier for transporting semiconductor wafers according to an embodiment of the present invention, the non-slip pad may include a base part mounted on the upper surface of the holder, and a pattern part formed on the upper surface of the base part and including one or more fine patterns.

In the carrier for semiconductor wafer transport according to an embodiment of the present invention, the one or more fine patterns may be formed in a columnar shape, and the cross-sectional shape of the column is a polygon, a circle, or an ellipse, and the height of the column is 10 nm to 1000 μm and the diameter of the pillar may be in the range of 10 nm to 1000 μm.

In the carrier for transporting semiconductor wafers according to an embodiment of the present invention, the one or more fine patterns may be formed in a groove shape, and the cross-sectional shape of the groove is a polygon, a circle, or an ellipse, and the depth of the groove is 10 nm to 1000 nm. μm, and the width of the groove may be 10 nm to 1000 μm.

In the carrier for transporting a semiconductor wafer according to an embodiment of the present invention, a mounting force by a Van der Waals force may be generated between the lower surface of the wafer and the upper surface of the pattern part.

In the carrier for transporting semiconductor wafers according to an embodiment of the present invention, the base part and the pattern part are flexible elastomers, silicon-based elastomers, fluoroelastomers (FKM, fluoroelastomers), and perfluoroelastomers. (FFKM, perfluoroelastomer) or polytetrafluoroethylene (PTFE, polytetrafluoroethylene).

In the carrier for transferring a semiconductor wafer according to an embodiment of the present invention, the pattern part may include a conductive layer part having conductivity so as to be in electrical contact with the wafer on the upper surface.

In the carrier for transporting semiconductor wafers according to an embodiment of the present invention, it may further include a conductive part electrically connecting the conductive layer part and the holder.

In the carrier for transporting semiconductor wafers according to an embodiment of the present invention, further comprising an adhesive layer for adhesion to the upper surface of the holder on the lower surface of the base part, and a conductive part electrically connecting the conductive layer part and the adhesive layer, the adhesive layer may have conductivity so as to be electrically connected to the wafer.

In the carrier for transporting semiconductor wafers according to an embodiment of the present invention, the thickness of the conductive layer may be 5 nm to 200 μm.

In the carrier for transferring a semiconductor wafer according to an embodiment of the present invention, the conducting portion may be formed to surround a side surface of the base portion.

In the carrier for semiconductor wafer transport according to an embodiment of the present invention, the conductive layer portion is graphene, CNT (carbon nano tube), C60, C540, C70, amorphous carbon, graphite, polyacetylene, Polythiophene, polyaniline, polypyrrole, polypphenylene, polyphenylene vinylene, polyparaphenylenesulfide sulphide), poly p phenylene vinylene, poly iso thianaphthene, or poly thienylene vinylene.

In the carrier for transporting semiconductor wafers according to an embodiment of the present invention, the conducting part is graphene, carbon nano tube (CNT), C60, C540, C70, amorphous carbon, graphite, polyacetylene, Polythiophene, polyaniline, polypyrrole, polypphenylene, polyphenylene vinylene, polyparaphenylenesulfide sulphide), poly p phenylene vinylene, poly iso thianaphthene, or poly thienylene vinylene.

According to an embodiment of the present invention, an anti-skid pad is mounted on the upper surface of the holder of the carrier in contact with the wafer, and a detachable part is included so that the holder can be attached to and detached from the frame, so that the wafer is moved to the carrier even during the rapid acceleration/deceleration of the carrier during the transfer of the wafer. By allowing it to be stably seated in the holder, it is possible to prevent contamination due to damage or scratches caused by the separation of the wafer, thereby improving process stability.

1 and 2 are schematic views of a carrier for transferring semiconductor wafers according to an embodiment of the present invention.

3 is a view for explaining the configuration of the holder and the anti-slip pad according to an embodiment of the present invention.

4 is a view for explaining the configuration of a detachable unit according to an embodiment of the present invention.

5 and 6 are views for explaining the configuration of the anti-slip pad according to the embodiment of the present invention.

7 is a view for explaining an anti-slip pad including a conductive layer according to an embodiment of the present invention.

8 to 10 are views for explaining an anti-slip pad including a conductive part according to an embodiment of the present invention.

11 is a view for explaining an anti-slip pad including an adhesive layer according to an embodiment of the present invention.

Advantages and/or features of the present invention, and methods of achieving them, will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the art to which the present invention pertains It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 are schematic views of a carrier 100 for transferring semiconductor wafers according to an embodiment of the present invention.

Referring to FIG. 1 , the carrier 100 for transporting semiconductor wafers includes a frame 110 including an opening, one or more holders 120 mounted inside the frame 110 , and attaching and detaching the holder 120 to the frame 110 . It may include a detachable part 130 that enables this and an anti-skid pad 140 for preventing separation of the wafer. The wafer on which the previous process has been completed is loaded into the robot arm and introduced through the opening of the frame 110 . In this case, the wafer is introduced into the upper surface of any one of the one or more holders, and after reaching an appropriate position, the introduced wafer is unloaded from the robot arm and seated on the holder 120 . An anti-skid pad 140 is positioned between the seated wafer and the holder 120 , and the non-slip pad 140 enables the wafer to be more firmly seated on the holder 120 .

Referring to FIG. 2 , the inner width of the frame 110 is formed to be larger than the diameter of the wafer 150 for the inflow and outflow of the wafer 150 into the carrier 100 , and there is a gap therebetween. Due to the rapid acceleration/deceleration of the carrier 100 , the wafer 150 loaded therein may move unstable within the gap, which may cause problems such as breakage. Since the wafer 150 is stably seated on the holder 120 due to the non-slip pad 140 according to the embodiment of the present invention, it is possible to prevent problems such as damage as described above.

3 is a view for explaining the configuration of the holder 120 and the non-slip pad 140 according to an embodiment of the present invention.

Referring to FIG. 3 , the holder 120 is shown in the form of 'C' as an example, but if the robot arm and the loading and unloading of the wafer 150 are possible, it can be formed in various shapes such as 'T'. have. The non-slip pad 140 may be mounted at an appropriate position of the holder 120 in consideration of the mounting position of the wafer 150 . 3 illustrates an example in which the anti-slip pad 140 is mounted at three positions on the upper surface of the holder 120 , it may be mounted at various positions depending on the shape of the holder 120 . The planar shape of the non-slip pad 140 may be formed as shown in FIG. 3 (a) in consideration of a large contact area, but an appropriate mounting force between the wafer 150 and the non-slip pad 140 and the holder 120 In consideration of the convenience of attachment and detachment, it may be formed in various planar shapes, such as the circle of FIG. 3(b).

4 is a view for explaining the configuration of the detachable unit 130 according to an embodiment of the present invention.

In general, 25 wafers are loaded in one carrier. The vertical spacing between the wafers seated in the holder is very tight, about 1 cm.

On the other hand, due to repeated use of the carrier, that is, numerous contacts of the wafer, the anti-skid pad may be worn due to friction. Because the wafer cannot be stably seated in the holder due to abrasion of the non-slip pad and problems such as detachment and breakage may occur, it is necessary to replace the non-slip pad when the wear level of the non-slip pad exceeds the appropriate line. The non-slip pad includes an adhesive layer at the bottom and is mounted on the upper surface of the holder so that it can be easily removed when necessary.

When the holder and the frame are integrally formed and cannot be separated, it is not easy to replace the non-slip pad mounted inside the holder due to the tight spacing between the holders. If the holder is detached from the frame to enable detachment, the exchange can be easily performed by attaching the holder to the frame after replacing the non-slip pad by detaching the holder.

Referring to FIG. 4 , various forms of the detachable part 130 for attaching and detaching the holder 120 to the frame 110 are illustrated, and it is obvious that the scope of the present invention is not limited thereto. Although concave-convex shapes are formed in the frame 110 and the holder 120, respectively, the positions may be changed to form the concave-convex shapes in the holder 120 and the frame 110, respectively. In addition to the concave-convex shape, the holder 120 may be detachably attached to the frame 110 through a dowel or the like.

5 and 6 are diagrams for explaining the configuration of the anti-slip pad 140 .

Referring to FIG. 5 , the anti-slip pad 140 may include a base part 141 and a pattern part 143 . The base part 141 is formed to support the pattern part 143 , and the pattern part 143 may include one or more pillars or protrusions 1431 . One or more pillars or projections 1431 may be formed to extend vertically with respect to the upper surface of the base portion 141, but is not limited thereto and may be formed at a predetermined angle rather than vertical, and each pillar or projection ( The angles 1431 make with the upper surface of the base part 141 may not be the same.

Although one or more pillars or protrusions 1431 are described as an example that they are formed in a straight line, the present invention is not limited thereto and may be formed in a curved shape.

One or more pillars or protrusions 1431 are disposed to be spaced apart, and the distance may be the same or different. The one or more pillars or protrusions 1431 may be formed in a cylindrical shape, but are not limited thereto, and may be formed in various cross-sectional shapes such as polygons, such as triangles, quadrilaterals, or pentagons, or ovals, in cross-section. The upper end of the one or more pillars or protrusions 1431 may be flat, but may also be formed in a rounded shape.

One or more pillars or protrusions 1431 may be formed to have a height of 10 nm to 1000 μm, and each of the pillars or protrusions 1431 may be formed to have the same height, but is not limited thereto, and may be formed to have different heights.

One or more pillars or protrusions 1431 may be formed with a diameter or thickness of 10 nm to 1000 μm, and each of the pillars or protrusions 1431 may be formed with the same diameter or thickness, but is not limited thereto, but different diameters or thicknesses. may be formed as

Referring to FIG. 6 , in the anti-slip pad, the pattern part 143 may include one or more grooves or holes 1433 . One or more grooves or holes 1433 may be formed to vertically extend downwardly toward the upper surface of the base portion 141 , but the present invention is not limited thereto and may be formed at a predetermined angle rather than vertical. The angles 1433 make with the upper surface of the base part 141 may not be the same.

Although one or more grooves or holes 1433 are described as an example in which they are formed in a straight line, the present invention is not limited thereto and may be formed in a curved shape.

The one or more grooves or holes 1433 are disposed to be spaced apart, and the spacing distance may be the same or different. The one or more grooves or holes 1433 may be formed in a circular cross-section, but the cross-section is not limited thereto, and the cross-section may be formed in various cross-sectional shapes such as a polygonal shape such as a triangle, a square, or a pentagon, or an oval shape. The bottom of the one or more grooves or holes 1433 may be flat or may be formed in a rounded shape.

One or more grooves or holes 1433 may be formed to a depth of 10 nm to 1000 μm, and each of the grooves or holes 1433 may be formed to have the same depth, but is not limited thereto and may be formed to have different depths.

The one or more grooves or holes 1433 may be formed to have a width of 10 nm to 1000 μm, and each of the grooves or holes 1433 may be formed to have the same width, but is not limited thereto and may be formed to have different widths.

The base portion 141 and the pattern portion 143 may be integrally formed at the same time, but is not limited thereto, and may be formed sequentially or separately formed and then combined. When the base part 141 and the pattern part 143 are integrally formed, they may be integrally formed using a pre-fabricated mold. The base part 141 and the pattern part 143 may be formed of the same material. The base portion 141 and the pattern portion 143 may be formed of a polymer material, or may be formed by mixing a polymer material with a carbon-based material such as graphene and carbon nanotubes. The base portion 141 and the pattern portion 143 may include an elastic polymer (elastomer), a silicone-based elastomer (Si based elastomer), a fluoroelastomer (FKM, fluoroelastomer), a perfluoroelastomer (FFKM, perfluoroelastomer), or polytetrafluoro It may be formed including ethylene (PTFE, polytetrafluoroethylene).

The pattern part 143 may provide a high frictional force in response to the normal force caused by gravity of the wafer, thereby strengthening the mounting force of the wafer to the holder 120 . Also, an attractive force by a Van der Waals force may be generated between the upper surface of the pattern part 143 and the lower surface of the wafer.

7 is a view for explaining the non-slip pad 140 including the conductive layer portion 145 .

Referring to FIG. 7 , the non-slip pad 140 may include a conductive layer portion 145 having conductivity on a surface portion in contact with the wafer on an upper portion of the pattern portion 143 . Since the conductive layer part 145 has conductivity, it is electrically connected to the lower surface of the wafer seated on the holder 120 . The thickness of the conductive layer portion 145 may be 5 nm to 200 μm, and may have an overall uniform thickness, but is not limited thereto, and may have an irregular thickness. 7 illustrates a case in which the thickness of the conductive layer part 145 is smaller than the height of the pillars or protrusions as an example, but the present invention is not limited thereto, and the thickness of the conductive layer part 145 may be greater than the height of the pillars or protrusions.

Although the case where the pattern part 143 includes the pillars or protrusions 1431 has been described as an example through FIG. 7 , the present invention is not limited thereto, and it is also applicable to the case where the pattern part 143 includes a groove or a hole. In this case, the thickness of the conductive layer portion may be smaller than the depth of the groove or hole, but is not limited thereto, and the thickness of the conductive layer portion may be greater than the depth of the groove or hole. In addition, the thickness of the conductive layer portion may be uniform as a whole, but is not limited thereto, and may be irregular depending on the shape of the pattern portion.

8 to 10 are views for explaining the non-slip pad 140 including the energizing part 147 .

When the positively or negatively charged wafer due to the previous process is seated on the non-slip pad, if the non-slip pad is formed of an insulator, polarization occurs across the top and bottom. Charges of different polarities from the wafer are aggregated on the upper portion of the anti-skid pad adjacent to the wafer, that is, on the pattern portion, and electrostatic attraction acts between the wafer and the pattern portion due to charges of different polarities. Since the above electrostatic attraction generates an excessive mounting force between the wafer and the non-slip pad, an excessive force is required to separate the wafer from the holder during the unloading process. In this process, a popping phenomenon occurs in which the wafer abruptly jumps out of the holder, and if excessive, the wafer may impact the upper holder or the side frame, causing scratches or damage. In addition, particles may be generated in the process of impacting the wafer, and serious problems such as a decrease in yield may occur due to contamination.

Referring to FIG. 8 , the non-slip pad may include a conductive part 147 electrically connecting the conductive layer part 145 and the holder 120 . Referring to FIG. 9 , after loading, the wafer 150 is electrically connected to the holder 120 through the conductive layer part 145 and the energizing part 147 , and the charge aggregated on the wafer 150 and the top of the non-slip pad. Charges that are aggregated in may be neutralized by being grounded through the holder 120 . Due to this, by removing unnecessary electrostatic attraction generated between the wafer 150 and the non-slip pad 140 , the popping phenomenon that occurs in the process of separating the wafer 150 from the holder 120 can be easily removed. Therefore, process stability can be ensured.

The conductive part 147 may be formed to extend along the side surface of the base part 141 to be electrically connected to the holder 120 . Referring to FIG. 10 , the conductive part 147 may be formed to surround the side surface of the base part 141 , but may be formed to surround only some side surfaces of the base part 141 if the grounding is stably made.

The conductive layer portion 145 and the conducting portion 147 may be integrally formed, but is not limited thereto, and may be sequentially formed or separately formed and then electrically connected. The conductive layer part 145 and the conductive part 147 may be formed sequentially or integrally by injecting a raw material solution of the conductive layer part 145 or the conductive part 147 into a pre-fabricated mold.

The conductive layer portion 145 and the conductive portion 147 may be formed of conductive materials, and may include a carbon-based material or a conductive polymer, or may be formed by mixing them. The carbon-based material may include graphene, carbon nano tube (CNT), C60, C540, C70, amorphous carbon, or graphite. Conductive polymers include polyacetylene, polythiophene, polyaniline, polypyrrole, polypphenylene, and polyphenylenevinylene. , poly p phenylene sulphide, poly p phenylene vinylene, poly iso thianaphthene or poly thienylene vinylene. can

11 is a view for explaining an anti-slip pad including an adhesive layer 160 .

Referring to FIG. 11 , the non-slip pad includes an adhesive layer 160 , and may be mounted on the holder 120 through the adhesive layer 160 . The conductive part 147 may be formed to be electrically connected to the conductive layer part 145 and extend to the adhesive layer 160 along the side of the base part, and the conductive part 147 may be formed to be electrically connected to the adhesive layer 160 . can That is, when the non-slip pad is mounted on the blade through the adhesive layer 160 , an electrical path is formed from the conductive layer part 145 to the holder 120 to neutralize charges through the conductive part 147 and the adhesive layer 160 . can be

The adhesive layer 160 may be formed of conductive materials, and may include a carbon-based material or a conductive polymer in adhesive materials such as polyimide. The carbon-based material forms an electrical path of a network structure in the adhesive material, thereby forming an electrical path from the top to the bottom of the adhesive layer 160 .

When the wafer is loaded, in the same manner as in the principle according to FIG. 10 , the charges accumulated on the wafer and the non-slip pad are neutralized by being grounded to the holder 130 through the conductive layer part 145 , the conducting part 147 , and the adhesive layer 160 . have. Accordingly, by removing unnecessary electrostatic attraction between the wafer and the non-slip pad, the popping phenomenon occurring in the process of separating the wafer from the holder can be easily removed, thereby ensuring process stability.

Although specific embodiments according to the present invention have been described so far, various modifications are possible without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims described below as well as the claims and equivalents.

As described above, although the present invention has been described with reference to the limited examples and drawings, the present invention is not limited to the above examples, which are various modifications and Transformation is possible. Accordingly, the spirit of the present invention should be understood only by the claims described below, and all equivalents or equivalent modifications thereof will fall within the scope of the spirit of the present invention.

[Explanation of code]

100: carrier

110: frame

120: holder

130: detachable part

140: non-slip pad

141: base part

143: pattern part

1431: pillar or protuberance

1433: home or hole

145: conductive layer part

147: current unit

150: wafer

160: adhesive layer

Claims

In the carrier for semiconductor wafer transfer,

a frame including an opening for storing and transferring a plurality of wafers introduced through the opening;

one or more holders for supporting the plurality of wafers so as to be spaced apart and stacked inside the frame;

a detachable part configured to separate the one or more holders to be detached from the inside of the frame; and

and an anti-skid pad mounted on the holder to support the wafer to prevent separation.
According to claim 1,

The anti-slip pad,

a base part mounted on the upper surface of the holder; and

and a pattern part formed on the upper surface of the base part and including one or more fine patterns.
3. The method of claim 2,

The one or more fine patterns are formed in a columnar shape,

The cross-sectional shape of the pillar is a polygon, a circle or an ellipse,

The height of the pillar is 10 nm to 1000 μm,

A carrier for semiconductor wafer transport, characterized in that the pillar has a diameter of 10 nm to 1000 μm.
3. The method of claim 2,

The one or more fine patterns are formed in a groove shape,

The cross-sectional shape of the groove is a polygon, a circle or an ellipse,

The depth of the groove is 10 nm to 1000 μm,

A carrier for semiconductor wafer transport, characterized in that the groove has a diameter of 10 nm to 1000 μm.
3. The method of claim 2,

A carrier for transferring semiconductor wafers, characterized in that a mounting force is generated between the lower surface of the wafer and the upper surface of the pattern part by a Van der Waals force.
3. The method of claim 2,

The base part and the pattern part are elastic polymer (elastomer), silicone-based elastomer (Si based elastomer), fluoroelastomer (FKM, fluoroelastomer), perfluoroelastomer (FFKM, perfluoroelastomer) or polytetrafluoroethylene (PTFE, polytetrafluoroethylene) ) A carrier for transporting semiconductor wafers, characterized in that it comprises.
3. The method of claim 2,

The carrier for semiconductor wafer transport, characterized in that it comprises a; conductive layer portion having conductivity so as to be in electrical contact with the wafer on the upper surface of the pattern portion.
8. The method of claim 7,

A carrier for transferring semiconductor wafers comprising a; a conductive part electrically connecting the conductive layer part and the holder.
8. The method of claim 7,

an adhesive layer for adhesion to the upper surface of the holder on the lower surface of the base part; and

Containing;

The adhesive layer is a carrier for semiconductor wafer transport, characterized in that it has conductivity to be electrically connected to the wafer.
8. The method of claim 7,

The semiconductor wafer transport carrier, characterized in that the thickness of the conductive layer is 5nm to 200㎛.
10. The method according to claim 8 or 9,

The carrier for semiconductor wafer transfer, characterized in that the current-carrying unit surrounds a side surface of the base portion.
8. The method of claim 7,

The conductive layer portion is graphene, carbon nano tube (CNT), C60, C540, C70, amorphous carbon, graphite, polyacetylene, polythiophene, polyaniline, Poly pyrrole, poly p phenylene, poly phenylene vinylene, poly p phenylene sulphide, poly p phenylene vinylene ), poly iso thianaphthene (poly iso thianaphthene) or poly thienylene vinylene (poly thienylene vinylene), characterized in that it comprises at least one carrier for transporting semiconductor wafers.
10. The method according to claim 8 or 9,

The conducting part is graphene, carbon nano tube (CNT), C60, C540, C70, amorphous carbon, graphite, polyacetylene, polythiophene, polyaniline, Poly pyrrole, poly p phenylene, poly phenylene vinylene, poly p phenylene sulphide, poly p phenylene vinylene ), poly iso thianaphthene (poly iso thianaphthene) or poly thienylene vinylene (poly thienylene vinylene), characterized in that it comprises at least one carrier for transporting semiconductor wafers.