WO2021201622A1 - 색상형 디비알 필름 및 이의 제조 방법 - Google Patents
색상형 디비알 필름 및 이의 제조 방법 Download PDFInfo
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- solar cell
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present application relates to a color-type DBR film manufactured through a low-temperature solution process, a manufacturing method thereof, and a CIGS solar cell to which the color-type DBR film is applied.
- a solar cell is a device based on a semiconductor principle, and has the characteristic of converting solar energy into electrical energy.
- BIPV building-integrated solar cells
- the solar cell In order to apply the solar cell to urban living structures, it must be a solar cell capable of maintaining high efficiency for light of various intensities as well as stability that can be operated for a long time outside.
- Dye-sensitized and organic solar cells can implement a variety of colors, but have low color purity due to a broad absorption spectrum, and require improved efficiency and stability for commercialization.
- perovskite solar cells Although perovskite solar cells have high efficiency, they need to secure stability, and there is a limitation in that it is difficult to realize various colors due to the nature of inorganic materials.
- CIGS solar cell is the most suitable solar cell among next-generation solar cells to be applied to urban structures mainly installed outside due to its high efficiency and stability, but it is difficult to realize various colors due to the nature of inorganic materials.
- Fabry-Perot interferometer In order to apply solar cells to urban living structures, aesthetics are essential in addition to efficiency and stability. In order to realize the aesthetics of the next-generation CIGS solar cell, it is necessary to develop a design that can be applied to various urban living structures with permeability and various colors for CIGS solar cells. / A method using internal reflection of a multilayer metal thin film (Fabry-Perot interferometer) and a Distributed Bragg reflector (DBR) are used. Fabry-Perot interferometer has high color purity but low transmittance, so there is a problem in that a lot of efficiency reduction is inevitable while implementing color in solar cells.
- DBR Distributed Bragg reflector
- DBR Distributed Bragg reflector
- FWHM narrow bandwidth
- Patent Document 0001 Republic of Korea Patent Publication No. 10-2018-0076890
- An object of the present application is to provide a color-type DBR film manufactured through a low-temperature solution process, a manufacturing method thereof, and a CIGS solar cell to which the color-type DBR film is applied.
- a first aspect of the present disclosure is to form a first layer through a solution process of a first solution comprising a first layer precursor material; and forming a second layer through a solution process of a second solution containing a second layer precursor material to prepare a unit laminate.
- a second aspect of the present application is a color-type DBR film produced through the method for producing a DBR film according to the first aspect, and expresses blue, green, and red colors by controlling the thickness of the first layer, the second layer, or both. It provides a color-type DBR film.
- a third aspect of the present application provides a CIGS solar cell to which the color DBR film according to the second aspect is applied.
- the DBR filter manufacturing method according to the present invention has the effect of manufacturing a multi-layer thin film through a low-temperature continuous solution process, and thus can be performed at low cost and a large-area DBR filter can be manufactured.
- the color DBR film according to the present application is a flexible polymer-based film, it has a feature that can be applied to a solar cell module of a curved surface rather than a flat surface.
- the color DBR film according to the embodiments of the present application has high light transmittance when applied to a building-integrated solar cell, so that the efficiency of the solar cell can be maintained within 10% without lowering the efficiency, and at the same time a narrow reflection wavelength width (FWHM) It has the characteristic of giving aesthetics to the exterior wall of a building because it can express colors with high color purity.
- FWHM narrow reflection wavelength width
- FIG. 1 is a schematic diagram showing a manufacturing strategy of a DBR film using a low-temperature solution process in one embodiment of the present application.
- FIG. 2 is a schematic diagram showing the structure of a DBR film in one embodiment of the present application.
- 3A is a graph showing reflectance (i) and CIE data (ii) according to the number of stacks in the DBR film (blue) according to an embodiment of the present application.
- 3B is a graph showing reflectance (i) and CIE data (ii) according to the number of stacks in the DBR film (green) according to an embodiment of the present application.
- 3C is a graph showing reflectance (i) and CIE data (ii) according to the number of stacks in the DBR film (red) according to an embodiment of the present application.
- Figure 4a is a graph showing the reflectance of each wavelength band in the 37 layer in the DBR film according to an embodiment of the present application.
- Figure 4b is a graph showing CIE data of each wavelength band in the 37 layer in the DBR film according to an embodiment of the present application.
- 4c is a photograph showing color expression in the 37th layer in the DBR film according to an embodiment of the present application.
- FIG. 5 is a SEM photograph of a cross section of the film in the DBR film according to an embodiment of the present application.
- Figure 6a shows the reflectance (i) and the color expression photograph (ii) of the DBR film (blue) according to an embodiment of the present application according to the number of layers in the case of a large area of 5 cm X 5 cm.
- Figure 6b in the DBR film (green) according to an embodiment of the present application, shows the reflectance (i) and color expression photograph (ii) thereof according to the number of stacks in a case of a large area of 5 cm X 5 cm.
- 6c is a graph showing CIE data in the case of a large area of 5 cm X 5 cm in the DBR film according to an embodiment of the present application.
- 6d is, in the DBR film ((i) and (ii)) according to an embodiment of the present application, the center (X 1, X4) in the color expression photograph in the case of a large area of 5 cm X 5 cm, at the center It is a photograph showing the position (X2, X5) at a radius of 1.5 cm and the position at a radius of 3 cm from the center (X3, X6).
- 6e is a graph showing reflectance according to each position in the case of a large area of 5 cm X 5 cm in the DBR film according to an embodiment of the present application.
- FIG. 7 is a graph showing reflectance measured with a confocal microscope in a CIGS solar cell to which a DBR film according to an embodiment of the present application is applied.
- FIG. 8A is a photograph showing the appearance according to the number of layers in the CIGS solar cell to which the DBR film according to an embodiment of the present application is applied.
- 8B is a photograph showing the appearance according to the number of layers in the substrate to which the DBR film according to an embodiment of the present application is applied.
- 9A is a photograph showing each point measured by a confocal microscope in a CIGS solar cell to which a DBR film according to an embodiment of the present application is applied.
- FIG. 9b is a graph comparing reflectance spectra of a DBR simulated by MATLAB at each point, a CIGS solar cell to which a DBR film is applied, and a glass substrate in an embodiment of the present application.
- FIG. 9c is a graph comparing reflectance spectra of a DBR simulated by MATLAB at each point, a CIGS solar cell to which a DBR film is applied, and a glass substrate in an embodiment of the present application.
- FIG. 9d is a graph comparing reflectance spectra in a CIGS solar cell to which a DBR film is applied, and a DBR simulated by MATLAB at each point, and a glass substrate, in an embodiment of the present application.
- 10A is a photograph showing a spin coater using a chuck made of a metal material and a DBR film manufactured through the spin coater in the prior art.
- FIG. 10b is a photograph showing a spin coater using a chuck made of polypropylene and a DBR film manufactured through this, according to an embodiment of the present application.
- 11A is a photograph showing the appearance according to the number of layers in the CIGS solar cell to which the DBR film (blue) according to an embodiment of the present application is applied.
- 11B is a graph comparing reflectance spectra of DBR simulated by MATLAB at each point, a CIGS solar cell to which a DBR film is applied, and a glass substrate in an embodiment of the present application.
- 11c is a graph comparing reflectance spectra in a CIGS solar cell to which a DBR film is applied, and a DBR simulated by MATLAB at each point, and a glass substrate, in an embodiment of the present application.
- FIG. 12A is a photograph showing the appearance according to the number of layers in a CIGS solar cell to which a DBR film (green) according to an embodiment of the present application is applied.
- FIG. 12b is a graph comparing reflectance spectra of a DBR simulated by MATLAB at each point, a CIGS solar cell to which a DBR film is applied, and a glass substrate in an embodiment of the present application.
- FIG. 12c is a graph comparing reflectance spectra of a DBR simulated by MATLAB at each point, a CIGS solar cell to which a DBR film is applied, and a glass substrate in an embodiment of the present application.
- 13A is a photograph showing the appearance according to the number of layers in a CIGS solar cell to which a DBR film (red) according to an embodiment of the present application is applied.
- 13B is a graph comparing reflectance spectra in a CIGS solar cell to which a DBR film is applied, and a DBR simulated by MATLAB at each point, and a glass substrate, in an embodiment of the present application.
- 13c is a graph comparing reflectance spectra of DBR simulated by MATLAB at each point, a CIGS solar cell to which a DBR film is applied, and a glass substrate in an embodiment of the present application.
- Figure 14b shows the appearance (i), J-V curve (ii), and EQE spectrum (iii) in the CIGS solar cell to which the DBR film (green) is applied according to an embodiment of the present application.
- 14c shows the appearance (i), J-V curve (ii), and EQE spectrum (iii) in the CIGS solar cell to which the DBR film (red) is applied according to an embodiment of the present application.
- step of or “step of” to the extent used does not mean “step for.”
- a first aspect of the present disclosure is to form a first layer through a solution process of a first solution comprising a first layer precursor material; and forming a second layer through a solution process of a second solution containing a second layer precursor material to prepare a unit laminate.
- the color filter of the prior art is used in a CIGS solar cell, there is a problem in that color purity and light transmittance are inferior, or there is a problem in that the process cost is high because it is manufactured through a deposition process.
- the method of manufacturing a DBR filter according to the present application can be performed at low cost by manufacturing a multilayer thin film through a low-temperature solution process, and a large-area DBR filter can be manufactured.
- the DBR filter manufactured in this way not only expresses R, G, and B colors, but also has the effect of not lowering the light efficiency of the CIGS solar cell.
- the first layer and the second layer may be formed by performing spin coating of the first solution and the second solution, respectively, and drying.
- the spin coating may be to use a polymer material instead of a metal material for the chuck of the spin coater.
- the polymer material may be polypropylene, polyvinyl chloride or polystyrene.
- the drying may be carried out at about 30 °C to about 90 °C. Specifically, the drying is about 30 °C to about 90 °C, about 40 °C to about 90 °C, about 50 °C to about 90 °C, about 60 °C to about 90 °C, about 30 °C to about 80 °C, about 30 °C to It may be carried out at about 70 °C, about 40 °C to about 80 °C, about 50 °C to about 80 °C, or about 60 °C to about 80 °C.
- the drying is carried out at less than 30 °C, there is a problem that the drying time is too long, if the drying is carried out at a temperature exceeding 90 °C, it cannot be considered a low-temperature process, and the drying may proceed quickly, but the film surface Cracks may occur, and there may be a problem in that the process cost is excessive.
- the formation of the unit laminate may be repeated 3 times to form the 7th layer to 25 times to form the 51 layer.
- the unit laminate may be formed as a plurality by laminating a plurality of times, and may be repeated 3 times to form 7 layers to 25 times to form 51 layers.
- the desired reflected wavelength width (FWHM) does not appear, and it may be formed by repeating 25 or more times. As this decreases, there may be a problem that the process efficiency is lowered.
- the first layer precursor material may be a metal oxide-ligand composite nanoparticle in which an acetylacetone ligand or a catechol ligand is coordinated to the surface of the metal oxide nanoparticle.
- the metal oxide-ligand composite nanoparticles may have a size of about 10 nm or less, but is not limited thereto.
- the size of the metal oxide-ligand composite nanoparticles is about 10 nm or less, about 8 nm or less, about 6 nm or less, about 4 nm or less, about 2 nm or less, about 1 nm to about 10 nm, about 2 nm to about 10 nm, about 3 nm to about 10 nm, about 4 nm to about 10 nm, about 5 nm to about 10 nm, about 6 nm to about 10 nm, about 7 nm to about 10 nm, about 8 nm to about 10 nm, about 9 nm to about 10 nm, about 1 nm to about 8 nm, about 3 nm to about 8 nm, about 5 nm to about 8 nm, about 7 nm to about 8 nm, about 8 nm, about 9
- the acetylacetone ligand or the catechol ligand is coordinated to the surface of the metal oxide nanoparticles, and the solvent dispersibility of the composite nanoparticles is excellent when preparing the first solution and the second solution There is a characteristic.
- the metal oxide may include one or more selected from TiO 2 , WO 3 , VO 3 , and ZrO 2 , but is not limited thereto.
- the acetylacetone ligand may include one represented by the following formula (1), but is not limited thereto:
- the catechol ligand may include one represented by the following formula (2), but is not limited thereto:
- R1 and R2 are the same as or different from each other, and each independently hydrogen; heavy hydrogen; halogen group; nitrile group; nitro group; hydroxyl group; carbonyl group; ester group; imid; amide group; a substituted or unsubstituted alkyl group; a substituted or unsubstituted cycloalkyl group; a substituted or unsubstituted alkoxy group; a substituted or unsubstituted aryloxy group; A substituted or unsubstituted alkylthio group; a substituted or unsubstituted arylthioxy group; A substituted or unsubstituted alkylsulfoxy group; a substituted or unsubstituted arylsulfoxy group; a substituted or unsubstituted alkenyl group; a substituted or unsubstituted silyl group; a substituted or unsubstituted boron group; a
- the acetylacetone ligand or the catechol ligand is coordinated to the surface of the metal oxide nanoparticles to prevent an increase in the size of the metal oxide nanoparticles.
- the second layer precursor material is polymethyl methacrylate (PMMA), polyimide, PDMS, poly acrylate, polyurethane acrylate (PUA) and silicon dioxide. (SiO 2 ) It may include one or more selected from, but is not limited thereto.
- the refractive index of the first layer may be 1.6 to 2.0, and the refractive index of the second layer may be 1.0 to 1.5, but is not limited thereto.
- the refractive index of the first layer may be 1.6 to 2.0 or 1.6 to 1.9, 1.6 to 1.8, and the refractive index of the second layer may be 1.0 to 1.5, 1.1 to 1.5, 1.2 to 1.5, or 1.3 to 1.5, It is not limited thereto.
- the refractive index of the first layer may be larger than that of the second layer, and due to the difference in refractive index, the DBR film formed as a multilayer thin film can achieve a narrow reflection wavelength width (FWHM), and exhibit excellent reflectance to express color can do.
- FWHM narrow reflection wavelength width
- a second aspect of the present application is a color-type DBR film produced through the method for producing a DBR film according to the first aspect, and expresses blue, green, and red colors by controlling the thickness of the first layer, the second layer, or both. It provides a color-type DBR film.
- the thickness of the first layer may be from about 20 nm to about 50 nm, and the thickness of the second layer may be from about 100 nm to about 180 nm.
- the thickness of the first layer may be from about 20 nm to about 50 nm, from about 30 nm to about 50 nm, or from about 30 nm to about 40 nm.
- the thickness of the second layer may be about 100 nm to about 180 nm, and more specifically, the thickness of the second layer is about 100 nm to about 140 nm, about 100 nm to about 130 for blue expression.
- the thickness of the second layer may be from about 120 nm to about 160 nm, from about 120 nm to about 150 nm or from about 130 nm to about 150 nm, , for red expression, the thickness of the second layer may be from about 150 nm to about 180 nm, from about 160 nm to about 180 nm, or from about 160 nm to about 170 nm.
- the thickness of the first layer exceeds 50 nm, cracks may occur on the surface of the manufactured film, and if it is less than 20 nm, haze may occur in the manufactured film because it is too thin. Therefore, control of the thickness of the first layer and the thickness of the second layer is absolutely necessary for the formation of a high-quality film and color expression.
- the color DBR film has a reflection wavelength width (FWHM) of blue and green wavelengths of 70 nm or less, a reflection wavelength width of a red wavelength of 100 nm or less, and a reflectance at the reflection wavelength It may represent 90% or more.
- the color DBR film has a reflection wavelength width (FWHM) of 70 nm, 60 nm, or 50 nm or less for blue and green wavelengths, and 100 nm, 90 nm or 80 nm or less for a reflection wavelength width of a red wavelength, and , the reflectance at the reflection wavelength may be 90%, 92%, or 95% or more.
- the color DBR film is a flexible polymer-based film, it has a feature that can be applied to a solar cell module having a curved surface rather than a flat surface.
- a third aspect of the present application provides a CIGS solar cell to which the color DBR film according to the second aspect is applied.
- the color DBR film according to the present application can be applied to a silicon solar cell, an organic solar cell, a perovskite solar cell, etc. other than a CIGS solar cell.
- the color filter of the prior art was applied to the silicon solar cell, etc., and showed adequate color efficiency and light efficiency, but when applied to a CIGS solar cell, the effect was not properly exhibited.
- the color-type DBR film according to the present application can exhibit high color purity and high transmittance even when applied to CIGS solar cells, so it is the only color-type DBR film that gives aesthetics to CIGS solar cells and does not reduce solar cell efficiency to less than 10%. There is this.
- the CIGS solar cell may be a building-integrated solar cell (BIPV), but is not limited thereto.
- the color DBR film according to the present application has high light transmittance when applied to a building-integrated solar cell, so that the efficiency of the solar cell can be maintained within 10% without lowering the efficiency, while at the same time having a narrow reflection wavelength width (FWHM) It is possible to express colors with high color purity by implementing the
- the CIGS solar cell includes a substrate; a lower electrode layer disposed on the substrate; a light absorbing layer disposed on the lower electrode layer; an upper electrode layer disposed on the light absorbing layer; and a buffer layer disposed between the upper electrode layer and the light absorption layer.
- the CIGS solar cell may be any commercially available solar cell.
- content that may be common to each other may be applied to all of the first to third aspects even if the description thereof is omitted.
- TiO 2 -AcAc having a high refractive index was synthesized by mixing titanium n-butoxide (Ti(OBu n ) 4 ) and acetylacetone (AcAc) in n-butanol. Then, an acidic aqueous solution of para-toluene sulfonic acid (PTSH) was added, and the mixture was stirred at room temperature for 15 minutes until the exothermic reaction was completed. After mixing at room temperature for 1 hour, the solution was heated at 60° C. overnight. The resulting solution was precipitated in toluene and centrifuged at 4000 rpm to obtain TiO 2 -AcAc nanoparticles.
- Ti(OBu n ) 4 titanium n-butoxide
- AcAc acetylacetone
- TiO 2 -AcAc nanoparticles were then completely dried in a vacuum chamber for at least 5 hours and stored under ambient air.
- TiO 2 -AcAc nanoparticles were dissolved in n-butanol at a concentration of 20-mg/ml and filtered using 0.1 ⁇ m polytetrafluoroethylene (PTFE) for further use.
- PTFE polytetrafluoroethylene
- a first layer comprising TiO 2 -AcAc nanoparticles was deposited through spin coating in ambient air, dried on a hot plate at 70° C. for 2 minutes, cooled at room temperature for 1 minute, and a first layer of 35 nm thickness was obtained. Thereafter, a second layer having a different layer thickness was further laminated by spin coating PMMA in ambient air. Each layer was subjected to the same drying process by adjusting the thickness of each layer (115 nm for blue, 145 nm for green, 175 nm for red) for a desired color to obtain a pair. This step was repeated up to 37 layers.
- the DBR film was produced in a size of 1 inch X 1 inch (Example 1) and 5 cm X 5 cm (Example 2).
- the reflectance according to the number of layers was confirmed through simulation using MATLAB, and the color indicated by DBR was predicted through CIE to establish process conditions for DBR film lamination (FIGS. 3a to Figs. 3c and 4a to 4c).
- TEM and SEM were measured to observe the cross-sectional view of the DBR film. Since TEM and SEM using ion beam damage the cross-section of the DBR, making it impossible to measure, a small piece of DBR was resined with epoxy and was measured using microtome technology at low temperature. As a result of the measurement, it was confirmed that the cross section of the DBR film of Example 1 was evenly and well generated ( FIG. 5 ).
- Example 2 having a size of 5 cm X 5 cm
- the reflectance and color were the same as those of Example 1 having a size of 1 inch X 1 inch even when coated on a large area ( FIGS. 6a to 6c ).
- a DBR film was laminated on the CIGS solar cell received from KIST under the continuous solution process conditions established in Examples 1 and 2. All manufacturing processes were carried out at a low temperature so as not to damage the CIGS solar cell and not to degrade the performance (Example 3).
- both samples have a blue color when more than a certain amount of coating (first layer 35 nm, second layer 110 nm) is applied, and the color increases as more layers are added. It became clearer ( FIGS. 7 , 8A and 8B ). However, all of them showed a circular gradation color in the center of the substrate, which was determined to be due to the temperature difference between the metal part and the rubber part in the chuck of the spin coater ( FIGS. 9A to 9D and Table 1 below).
- the reflectance of the CIGS color compared to the reference was maintained over 90%, and the reflected wavelength width (FWHM) was measured as blue, green ⁇ 70 nm, and red ⁇ 100 nm. (FIGS. 11A-11C, 12A-12B, and 13A-13C).
- the CIGS solar cell of the example to which the DBR film of the example is applied compared the efficiency before and after film coating. confirmed that the color can be expressed without lowering the efficiency of the CIGS solar cell.
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Abstract
Description
Claims (14)
- 제 1 층 전구체 물질을 포함하는 제 1 용액의 용액공정을 통해 제 1 층을 형성하고; 및제 2 층 전구체 물질을 포함하는 제 2 용액의 용액공정을 통해 제 2 층을 형성하여, 단위 적층체를 제조하는 것을 포함하는, DBR 필름의 제조 방법.
- 제 1 항에 있어서,상기 제 1 층 및 상기 제 2 층은, 각각 상기 제 1 용액 및 상기 제 2 용액의 스핀코팅을 수행하고, 건조하는 단계를 통해 형성되는 것인, DBR 필름의 제조 방법.
- 제 2 항에 있어서,상기 건조는 30℃ 내지 90℃에서 수행되는 것인, DBR 필름의 제조 방법.
- 제 1 항에 있어서,상기 단위 적층체의 형성은 3번 반복되어 7층 형성 내지 25번 반복되어 51층을 형성하는 것인, DBR 필름의 제조 방법.
- 제 1 항에 있어서,상기 제 1 층 전구체 물질은, 금속 산화물 나노입자의 표면에 아세틸아세톤 리간드 또는 카테콜 리간드가 배위결합된 금속 산화물-리간드 복합 나노입자인 것 인, DBR 필름의 제조 방법.
- 제 5 항에 있어서,상기 금속 산화물-리간드 복합 나노입자는 10 nm 이하의 크기를 가지는 것인, DBR 필름의 제조 방법.
- 제 5 항에 있어서,상기 금속 산화물은 TiO2, WO3, VO3, 및 ZrO2 중에서 선택되는 하나 이상을 포함하는 것인, DBR 필름의 제조 방법.
- 제 1 항에 있어서,제 2 층 전구체 물질은, 폴리메틸 메타크릴레이트(PMMA), 폴리이미드 (polyimide), PDMS, 폴리아크릴레이트(poly acrylate), 폴리우레탄 아크릴레이트 (PUA) 및 이산화규소(SiO2) 중에서 선택되는 하나 이상을 포함하는 것인, DBR 필름 의 제조 방법.
- 제 1 항에 있어서,상기 제 1 층의 굴절률은 1.6 내지 2.0이고, 상기 제 2 층의 굴절률은 1.0 내지 1.5인 것인, DBR 필름의 제조 방법.
- 제 1 항에 따른 DBR 필름의 제조 방법을 통해 제조되는 색상형 DBR 필름으로 서,상기 제 1 층, 제 2 층 또는 둘 모두의 두께를 조절하여 청색, 녹색, 적색을 발현하는 것인, 색상형 DBR 필름.
- 제 10 항에 있어서,상기 제 1 층의 두께는 20 nm 내지 50 nm이고,상기 제 2 층의 두께는 100 nm 내지 180 nm인 것인, 색상형 DBR 필름.
- 제 10 항에 있어서,상기 색상형 DBR 필름은, 청색 및 녹색 파장의 반사파장 폭(FWHM)이 70 nm 이하이고, 적색 파장의 반사파장 폭이 100 nm 이하이고, 반사 파장에서의 반사율이 90% 이상을 나타내는 것인, 색상형 DBR 필름.
- 제 10 항에 따른 색상형 DBR 필름이 적용된, CIGS 태양전지.
- 제 13 항에 있어서,상기 CIGS 태양전지는 건물일체형 태양전지(BIPV)인 것인, CIGS 태양전지.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070235072A1 (en) * | 2006-04-10 | 2007-10-11 | Peter Bermel | Solar cell efficiencies through periodicity |
US20100326506A1 (en) * | 2007-12-13 | 2010-12-30 | Merck Patent Gmbh | Photovoltaic Cells Comprising Group IV-VI Semiconductor Core-Shell Nanocrystals |
KR20170077609A (ko) * | 2015-12-28 | 2017-07-06 | 연세대학교 산학협력단 | 기판-반사층 복합체 및 이의 제조방법 |
US20190049634A1 (en) * | 2017-08-08 | 2019-02-14 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070235072A1 (en) * | 2006-04-10 | 2007-10-11 | Peter Bermel | Solar cell efficiencies through periodicity |
US20100326506A1 (en) * | 2007-12-13 | 2010-12-30 | Merck Patent Gmbh | Photovoltaic Cells Comprising Group IV-VI Semiconductor Core-Shell Nanocrystals |
KR20170077609A (ko) * | 2015-12-28 | 2017-07-06 | 연세대학교 산학협력단 | 기판-반사층 복합체 및 이의 제조방법 |
US20190049634A1 (en) * | 2017-08-08 | 2019-02-14 | Supriya Jaiswal | Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications |
Non-Patent Citations (1)
Title |
---|
HINCZEWSKI, D.S. ; HINCZEWSKI, M. ; TEPEHAN, F.Z. ; TEPEHAN, G.G.: "Optical filters from SiO"2 and TiO"2 multi-layers using sol-gel spin coating method", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM., NL, vol. 87, no. 1-4, 1 May 2005 (2005-05-01), NL, pages 181 - 196, XP027815134, ISSN: 0927-0248 * |
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