WO2021184930A1 - 显示面板 - Google Patents

显示面板 Download PDF

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Publication number
WO2021184930A1
WO2021184930A1 PCT/CN2021/070157 CN2021070157W WO2021184930A1 WO 2021184930 A1 WO2021184930 A1 WO 2021184930A1 CN 2021070157 W CN2021070157 W CN 2021070157W WO 2021184930 A1 WO2021184930 A1 WO 2021184930A1
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WIPO (PCT)
Prior art keywords
layer
light
light modulation
transmitting
display panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2021/070157
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English (en)
French (fr)
Inventor
方旭阳
彭兆基
刘明星
王盼盼
张志远
甘帅燕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan Govisionox Optoelectronics Co Ltd
Original Assignee
Kunshan Govisionox Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202010202595.4A external-priority patent/CN111223912B/zh
Priority claimed from CN202010202602.0A external-priority patent/CN111370457B/zh
Application filed by Kunshan Govisionox Optoelectronics Co Ltd filed Critical Kunshan Govisionox Optoelectronics Co Ltd
Publication of WO2021184930A1 publication Critical patent/WO2021184930A1/zh
Priority to US17/690,406 priority Critical patent/US12581835B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Definitions

  • This application relates to the field of display, in particular to a display panel.
  • the embodiment of the present application provides a display panel that improves the transmittance of light of a predetermined wavelength in the light-transmitting area, thereby reducing the difference in transmittance of light of different wavelengths.
  • the embodiment of the present application provides a display panel including a main display area and a light-transmitting area.
  • the main display area is arranged around at least a part of the outer periphery of the light-transmitting area.
  • the film layer is configured as a light-transmitting layer, at least part of the light-transmitting layer covers the light-transmitting area, and the display panel includes: at least one light-modulating layer, and each light-modulating layer is sandwiched between any adjacent light-transmitting layers covering the light-transmitting area
  • the light modulation layer is configured such that at least a part of it can increase the transmittance of light of a predetermined wavelength between adjacent light-transmitting layers sandwiching the light modulation layer.
  • the display panel according to the embodiments of the present application includes a light-transmitting area, and the display panel can integrate photosensitive components on the back of the light-transmitting area to realize under-screen integration of photosensitive components such as cameras, wherein the main display area surrounds at least part of the outer periphery of the light-transmitting area
  • the setting can reduce the width of the non-display area on the periphery of the main display area, thereby increasing the display area ratio of the display panel.
  • the light-transmitting film layer stack structure in the light-transmitting area of the display panel usually has a higher light transmittance for some wavelengths of light, and a lower light transmittance for some wavelengths of light.
  • the display panel of the embodiment of the present application includes at least one layer of light modulation
  • the light modulation layer is configured to at least partly increase the transmittance of light with a predetermined wavelength between adjacent light-transmitting layers sandwiching the light-modulating layer, so as to transmit light of some wavelengths with lower light transmittance.
  • the transmission rate is increased to be close to or equal to the transmittance of the wavelength light with higher transmittance, which improves the uniformity of the spectrum transmission and the color fidelity of the transmitted light.
  • FIG. 1 is a schematic top view of a display panel provided according to the first embodiment of the present application.
  • FIG. 2 is a schematic cross-sectional view of a display panel provided according to the first embodiment of the present application
  • FIG. 3 is a graph showing the transmittance of light of each wavelength of the display panel according to the first embodiment of the present application
  • FIG. 4 is a schematic cross-sectional view of a display panel provided according to a second embodiment of the present application.
  • FIG. 5 is a schematic cross-sectional view of a display panel provided according to a third embodiment of the present application.
  • FIG. 6 is a schematic cross-sectional view of a display panel provided according to a fourth embodiment of the present application.
  • FIG. 7 is a schematic top view of a display panel provided according to a fifth embodiment of the present application.
  • FIG. 8 is a schematic cross-sectional view of a display panel provided according to a fifth embodiment of the present application.
  • FIG. 9 is a partial enlarged schematic diagram of area D in FIG. 7;
  • FIG. 10 is a schematic cross-sectional view of a display panel provided according to a sixth embodiment of the present application.
  • FIG. 11 is a schematic cross-sectional view of a display panel provided according to a seventh embodiment of the present application.
  • FIG. 12 is a schematic cross-sectional view of a display panel provided according to an eighth embodiment of the present application.
  • FIG. 13 is a schematic cross-sectional view of a display panel provided according to a ninth embodiment of the present application.
  • An embodiment of the present application provides a display panel, and the display panel may be an organic light emitting diode (OLED) display panel.
  • the display panel includes a main display area and a light-transmitting area.
  • the main display area is arranged around at least part of the outer periphery of the light-transmitting area.
  • Layer, at least part of the light-transmitting layer covers the light-transmitting area.
  • the display panel includes at least one light modulation layer, and each light modulation layer is sandwiched between any adjacent light-transmitting layers covering the light-transmitting area. Modulate the transmittance between adjacent light-transmitting layers of the layer.
  • the display panel according to the embodiments of the present application includes a light-transmitting area, and the display panel can integrate photosensitive components on the back of the light-transmitting area to realize under-screen integration of photosensitive components such as cameras, wherein the main display area surrounds at least part of the outer periphery of the light-transmitting area
  • the setting can reduce the width of the non-display area on the periphery of the main display area, thereby increasing the display area ratio of the display panel.
  • the light-transmitting film layer stack structure in the light-transmitting area of the display panel usually has a higher light transmittance for some wavelengths of light, and a lower light transmittance for some wavelengths of light.
  • the display panel of the embodiment of the present application includes at least one layer of light modulation
  • the light modulation layer is configured to at least partly increase the transmittance of light of a predetermined wavelength between adjacent light-transmitting layers sandwiching the light-modulating layer, so as to transmit light of some wavelengths with lower light transmittance.
  • the transmission rate is increased to be close to or equal to the transmittance of the wavelength light with higher transmittance, which improves the uniformity of the spectrum transmission and the color fidelity of the transmitted light.
  • the light-transmitting area is a non-display area. In some optional embodiments, the light-transmitting area is a secondary display area.
  • the light-transmitting area will be described as the non-display area.
  • Figures 1 and 2 are respectively a schematic top view and a schematic cross-sectional view of a display panel according to the first embodiment of the present application.
  • Figure 2 shows a cross-section of a partial area of the display panel
  • line BB in Figure 1 shows the cut position of the schematic cross-sectional view.
  • the display panel 100 includes a main display area AA2 and a light-transmitting area TA.
  • the light-transmitting area TA is a non-display area, that is, the light-transmitting area TA does not form a light-emitting element and thus does not display.
  • the main display area AA2 is arranged around at least part of the outer circumference of the light-transmitting area TA.
  • the light-transmitting area TA has a circular structure, and the main display area AA2 is arranged around all parts of the outer circumference of the light-transmitting area TA.
  • the overall light transmittance of the display panel 100 in the light-transmitting area TA is more than 80%.
  • the display panel 100 includes a plurality of film layers arranged in a stack, a part of the film layer is configured as a light-transmitting layer, and the other part of the film layer is configured as a non-light-transmitting layer.
  • the non-light-transmitting layer extends in the main display area AA2 and is arranged to avoid the light-transmitting area TA, and at least a part of the light-transmitting layer covers the light-transmitting area TA. That is, in the main display area AA2, multiple non-light-transmitting layers and multiple light-transmitting layers are stacked in a preset arrangement, and in the light-transmitting area TA, multiple light-transmitting layers are stacked. In the main display area AA2, multiple film layers can form light-emitting elements, so as to realize the display function of the display panel 100 in the main display area AA2.
  • the display panel 100 may integrate a photosensitive component on the back of the light-transmitting area TA, so as to realize the under-screen integration of the photosensitive component of a camera, for example.
  • a photosensitive component on the back of the light-transmitting area TA
  • the main display area AA2 is arranged around at least part of the outer circumference of the light-transmitting area TA, and the photosensitive element can be integrated in the light-transmitting area TA, which can reduce the width of the non-display area on the outer circumference of the main display area AA2, thereby The display area ratio of the display panel 100 is increased.
  • the non-light-transmitting layer extends in the main display area AA2 and is arranged to avoid the light-transmitting area TA, so as to prevent the non-light-transmitting layer from blocking the light of the light-transmitting area TA and improve the transparency of the light-transmitting area TA.
  • the overall light transmittance is provided.
  • the light-transmitting film layer stack structure of the light-transmitting area TA of the display panel 100 generally has higher light transmittance to some wavelengths of light, and lower light transmittance to some wavelengths of light.
  • the display panel 100 of the embodiment of the present application includes at least one light modulation layer 110, and each light modulation layer 110 is sandwiched between any adjacent light transmission layers covering the light transmission area TA, and the light modulation layer 110 is configured as at least a part
  • the transmittance of light with a predetermined wavelength between adjacent light-transmitting layers sandwiching the light modulation layer 110 can be improved.
  • the transmittance of some wavelengths of light with lower transmittance can be increased to be close to or equal to the transmittance of wavelengths with higher transmittance, and the uniformity of spectrum transmission can be improved. Improve the color fidelity of transmitted light.
  • the display panel 100 may further include a substrate 120, a buffer layer 130, a device layer group 140, a light emitting element layer group 150, and an encapsulation layer 160.
  • the substrate 120 is configured as a light-transmitting layer.
  • the display panel 100 is a flexible display panel, and the substrate 120 is, for example, flexible and transparent made of materials such as polyimide (PI) and polyethylene terephthalate (PET). Substrate.
  • the substrate 120 may also be a rigid transparent substrate made of materials such as glass.
  • the buffer layer 130 is located on the substrate 120, and the buffer layer 130 is configured as a light-transmitting layer.
  • the device layer group 140 is located on the side of the buffer layer 130 away from the substrate 120.
  • the light emitting element layer group 150 is located on the side of the device layer group 140 away from the substrate 120.
  • the encapsulation layer 160 is located on a side of the light-emitting element layer group 150 away from the substrate 120, and the encapsulation layer 160 is configured as a light-transmitting layer.
  • the substrate 120, the buffer layer 130, and the encapsulation layer 160 cover the light-transmitting area TA, so that the display panel 100 has a laminated structure of multiple light-transmitting layers in the light-transmitting area TA to ensure the light-transmitting area TA has a relatively high light transmittance.
  • an image capture device for example, a camera
  • the imaging clarity requirement of the image capture device can be met.
  • the light emitting element layer group 150 includes a first electrode layer 151, a second electrode layer 152, and an emitting layer (EML) 153.
  • the second electrode layer 152 is located on the side of the first electrode layer 151 away from the substrate 120.
  • the light emitting layer 153 is located between the first electrode layer 151 and the second electrode layer 152.
  • One of the first electrode layer 151 and the second electrode layer 152 is an anode, and the other is a cathode.
  • the first electrode layer 151 is an anode and the second electrode layer 152 is a cathode as an example for description.
  • the first electrode layer 151 may be configured as a light-transmitting layer or a non-light-transmitting layer. In this embodiment, the first electrode layer 151 is configured as a non-light-transmitting layer.
  • the first electrode layer 151 may further include a first light-transmitting conductive layer, a reflective layer on the first light-transmitting conductive layer, and a second light-transmitting conductive layer on the reflective layer.
  • the first light-transmitting conductive layer and the second light-transmitting conductive layer can be an indium tin oxide (Indium Tin Oxide, ITO) layer or an indium zinc oxide (Indium Zinc Oxide, IZO) layer, etc.
  • the reflective layer can be a metal layer, for example, Made of silver.
  • the second electrode layer 152 may be configured as a light-transmitting layer.
  • the second electrode 113 may be a magnesium-silver alloy layer.
  • the light-emitting element layer group 150 further includes a carrier layer 154, which is located between the first electrode layer 151 and the light-emitting layer 153, and/or is located between the light-emitting layer 153 and the second electrode layer 152 between.
  • a carrier layer 154 is provided between the first electrode layer 151 and the light-emitting layer 153, and between the light-emitting layer 153 and the second electrode layer 152.
  • the carrier layer 154 is configured as a light-transmitting layer.
  • the light-emitting element layer group 150 may not be provided with the carrier layer 154.
  • the carrier layer refers to a carrier-related film layer used to realize the functions of injection, transport, and blocking of carriers (holes or electrons).
  • the carrier layer 154 between the first electrode layer 151 and the light emitting layer 153 may include a hole injection layer (HIL), a hole transport layer (HTL), and electron At least one of the barrier layers (Electron Blocking Layer, EBL).
  • the carrier layer 154 between the light-emitting layer 153 and the second electrode layer 152 may include an electron injection layer (Electron Inject Layer, EIL), an electron transport layer (Electron Transport Layer, ETL), and a hole blocking layer. At least one of the layers (Hole Blocking Layer, HBL).
  • the first electrode layer 151, the second electrode layer 152, and the light-emitting layer 153 extend in the main display area AA2 and are arranged to avoid the light-transmitting area TA, and the carrier layer 154 covers the light-transmitting area TA. That is, part of the film in the light-emitting element layer group 150 covers the light-transmitting area TA, and a part of the film extends in the main display area AA2 and is arranged to avoid the light-transmitting area TA, although the second electrode layer 152 may be configured as Light-transmitting layer, but in some embodiments, the second electrode layer 152 absorbs and reflects light to a higher degree. Therefore, the second electrode layer 152 is arranged to avoid the light-transmitting area TA, which can further improve the overall light-transmitting of the light-transmitting area TA. Rate.
  • the light-emitting element layer group 150 may not be provided with the carrier layer 154; in some embodiments, the light-emitting element layer group 150 includes the carrier layer 154, but the carrier layer 154 extends in the main display area AA2 and avoid the light transmission area TA setting. That is, in these embodiments, the light-transmitting area TA of the display panel 100 is not provided with the carrier layer 154, and the light transmittance of the light-transmitting area TA of the display panel 100 to the blue wavelength band is significantly improved.
  • the light-emitting element layer group 150 further includes a pixel definition layer 155, and the pixel definition layer 155 is provided with a plurality of pixel openings.
  • the first electrode layer 151 may include a plurality of patterned first electrodes
  • the light-emitting layer 153 may include a plurality of patterned light-emitting blocks, wherein the pixel openings are arranged in a one-to-one correspondence with the first electrodes and the light-emitting blocks, and the pixel openings include the first electrodes. At least a part of the light-emitting block is located in the pixel opening.
  • Each first electrode and the carrier layer 154, the light-emitting block, the carrier layer 154, and the second electrode layer 152 arranged in sequence on the side of the first electrode away from the substrate 120 form a light-emitting element.
  • the light-emitting element layer group 150 further includes a light extraction layer (Capping Layer) 156.
  • the light extraction layer 156 is located on the side of the second electrode layer 152 away from the substrate 120.
  • the light extraction layer 156 is configured as a light-transmitting layer, and the light extraction layer 156 covers the light-transmitting area TA.
  • the light emitting element layer group 150 may not include the light extraction layer 156.
  • At least one light modulation layer 110 includes a first light modulation layer 111 sandwiched between a substrate 120 and a buffer layer 130.
  • the first light modulation layer 111 can increase the transmittance of light with a preset wavelength between the substrate 120 and the buffer layer 130, thereby increasing the overall light transmittance of the light-transmitting area TA, and reduce the original low light transmittance of the preset
  • the transmittance of the light of the wavelength is increased to be close to or even equal to the transmittance of the light of the wavelength with the higher transmittance, which improves the uniformity of the spectrum transmission and the color fidelity of the transmitted light.
  • the buffer layer 130 includes a first sub-buffer layer 131 and a second sub-buffer layer 132 that are stacked.
  • the at least one light modulation layer 110 includes a second light modulation layer 112 sandwiched between the first sub-buffer layer 131 and the second sub-buffer layer 132.
  • the transmittance between the buffer layer 131 and the second sub-buffer layer 132 can increase the overall light transmittance of the light-transmitting area TA, and on the other hand, it can improve the uniformity of light transmission in each waveband, and improve the transmission of light. Color fidelity.
  • the first sub-buffer layer 131 may be a silicon nitride layer
  • the second sub-buffer layer 132 may be a silicon oxide layer.
  • the first light modulation layer 111 is a mixed film layer including at least two of silicon oxide, silicon nitride, and silicon.
  • the second light modulation layer 112 is a mixed film layer including at least two of silicon oxide, silicon nitride, and silicon.
  • the first light modulation layer 111 and the second light modulation layer 112 are both silicon oxynitride layers, that is, the first light modulation layer 111 and the second light modulation layer 112 are both formed by silicon oxide and silicon nitride.
  • the mixed film layer may be other mixed film layers, such as a mixed film layer of silicon oxide and silicon, a doped quartz film layer, and the like.
  • the first light modulation layer 111 and the second light modulation layer 112 can be formed by chemical vapor deposition (Chemical Vapor Deposition, CVD), magnetron sputtering, coating, etc., respectively, and can also be formed on the incoming substrate 120. Get integrated.
  • the refractive index of the light modulation layer 110 is between the refractive indexes of the adjacent light-transmitting layers sandwiching the light modulation layer 110, so as to ensure that the light modulation layer 110 can improve the adjacent light-transmitting layers sandwiching the light modulation layer 110. Transmittance between light-transmitting layers.
  • the refractive index of the first light modulation layer 111 is between the refractive index of the substrate 120 and the refractive index of the first sub-buffer layer 131 (buffer layer 130), and the second light modulation layer
  • the refractive index of 112 is between the first sub-buffer layer 131 and the second sub-buffer layer 132.
  • the refractive index of the light modulation layer 110 satisfies the following formula:
  • n A is the refractive index of one of the adjacent light-transmitting layers sandwiching the light modulation layer 110;
  • n B is the refractive index of the other one of the adjacent light-transmitting layers sandwiching the light modulation layer 110;
  • n C is the refractive index of the light modulation layer 110;
  • ⁇ is the effective efficiency, and the effective efficiency ⁇ is greater than or equal to 60%.
  • the effective rate ⁇ is greater than or equal to 60%, which can ensure that the light modulation layer 110 can enhance the transmittance of light with a predetermined wavelength between adjacent light-transmitting layers.
  • the refractive index of the light modulation layer 110 satisfies the following formula:
  • n A is the refractive index of one of the adjacent light-transmitting layers sandwiching the light modulation layer 110;
  • n B is the refractive index of the other one of the adjacent light-transmitting layers sandwiching the light modulation layer 110;
  • n C is the refractive index of the light modulation layer 110.
  • the formula (2) is equivalent to the effective efficiency ⁇ in the formula (1) is configured to be 100%.
  • the refractive index n C of the light modulation layer 110 satisfies the formula (2), the refractive index n C of the light modulation layer 110 is obtained A better value, at this time, the light modulation layer 110 can greatly increase the transmittance of light with a predetermined wavelength between adjacent light-transmitting layers.
  • the effective efficiency ⁇ in the above formula (1) can be understood as the degree of effectiveness that the modulation performance of the light modulation layer 110 can achieve better modulation performance (modulation performance corresponding to a better value of refractive index n C).
  • the refractive index of the first sub-buffer layer 131 is substituted into n A in the formula (1), and the refractive index of the second sub-buffer layer 132 is substituted into the formula
  • the effective efficiency is, for example, 100%, and a better value of the refractive index n C of the second light modulation layer 112 is obtained at this time; the effective efficiency is, for example, 96%, and when the effective efficiency is 96%,
  • each light modulation layer 110 includes a first portion located in the light-transmitting area TA, and the thickness of the first portion satisfies the following formula:
  • the wavelength ⁇ of the light of the preset wavelength is the wavelength of the light to be adjusted, and its dimension is consistent with the dimension of the thickness T C of the first part of the light modulation layer 110, and the dimension is, for example, nanometers.
  • each light modulation layer 110 includes a first portion located in the light-transmitting area TA, and at least one light modulation layer 110 includes a second portion located in the main display area AA2. As shown in FIG. 2, for example, in this embodiment, the second light modulation layer 112 includes a first portion 112a and a second portion 112b. Display area AA2.
  • the refractive index of the second light modulation layer 112 is substituted into the formula (3) n C , and the wavelength of the predetermined wavelength light is substituted into the formula ( Substituting any natural number for ⁇ in 3) and M in formula (3), the thickness T C of the first portion 112a of the light modulation layer 110 is obtained.
  • the wavelength ⁇ of the light of the preset wavelength is, for example, 500 nanometers.
  • the thickness T C of the first portion 112a of the light modulation layer 110 obtained at this time can increase the wavelength of the first portion 112a of the second light modulation layer 112 to 500.
  • the transmittance of nanometer light between the first sub-buffer layer 131 and the second sub-buffer layer 132 will also increase to a certain extent for light within a range of wavelengths close to 500 nanometers (for example, light with a wavelength of 490 nanometers). .
  • the transmittance of light with a wavelength of an integer multiple of 500 nanometers (for example, light with a wavelength of 1000 nanometers) between the first sub-buffer layer 131 and the second sub-buffer layer 132 will also increase.
  • the display panel 100 of the embodiment of the present application by providing the light modulation layer 110, on the one hand, due to its anti-reflection effect, the overall light transmittance of the light transmission area TA can be improved; on the other hand, the light modulation layer 110 can transmit the original light through The transmittance of some wavelengths of light with a lower light rate is increased to be close to or even equal to the transmittance of wavelengths with a higher light transmittance, which improves the uniformity of spectrum transmission and improves the color fidelity of the transmitted light.
  • FIG. 3 is a graph showing the transmittance of light of various wavelengths of the display panel according to the first embodiment of the present application.
  • FIG. 3 also shows a curve of the transmittance of a display panel of a comparative example to light of each wavelength.
  • the remaining structure is the same as that of the first embodiment of the present application.
  • the transmittance of the display panel of the first embodiment and the display panel of the comparative example to light of each wavelength can be measured, and the graph shown in FIG. 3 can be obtained according to the corresponding relationship between the wavelength and the transmittance.
  • the curve L1 is the transmittance curve of the display panel of the first embodiment to light of each wavelength
  • the curve L2 is the transmittance curve of the display panel of the comparative example to the light of each wavelength.
  • the overall transmittance of the light-transmitting area of the display panel of the comparative example to light is 76.12%.
  • the overall light transmittance of the light area to light is 87.28%. It can be seen that by providing the light modulation layer 110, the overall light transmittance of the light transmitting area of the display panel can be significantly improved.
  • the uniformity of the transmittance spectrum of the display panel of the first embodiment and the display panel of the comparative example was tested.
  • the standard deviation of the transmittance of the display panel of the comparative example to light with wavelengths of 410 nanometers (nm) to 780 nm was 0.08.
  • the standard deviation of the transmittance of the display panel for light with wavelengths from 410 nm to 780 nm is 0.01. It can be seen that by providing the light modulation layer 110, the uniformity of the transmittance spectrum of the display panel can be significantly improved.
  • the at least one light modulation layer 110 includes both the first portion located in the light-transmitting area TA and the second portion located in the main display area AA2.
  • the film layer adjacent to the two surfaces of the light-transmitting area TA and the first part of the light modulation layer 110 may be the same as the film layer adjacent to the two surfaces of the main display area AA2 and the second part of the light modulation layer 110.
  • At least one layer is different.
  • the thickness of the second part of the light modulation layer 110 may be the same as or different from the thickness of the first part, and the configuration is based on the modulation effect requirements of the light modulation layer 110 in the light transmission area TA and the main display area AA2.
  • the modulation effect of the second part and the first part are the same.
  • the modulation effect is different.
  • the light modulation layer 110 is provided on the substrate 120 and the buffer layer 130 as an example for description, so that the interference of the substrate 120 and the buffer layer 130 on the chromaticity fidelity of the transmitted light can be reduced.
  • the light modulation layer 110 may also be disposed at other film layers of the display panel to improve the interference of the other film layers on the fidelity of the transmitted light chromaticity.
  • FIG. 4 is a schematic cross-sectional view of a display panel provided according to a second embodiment of the present application, wherein FIG. 4 illustrates a cross-section of a partial area of the display panel.
  • Most of the structure of the display panel provided by the second embodiment is the same as the display panel provided by the first embodiment.
  • the differences between the second embodiment and the first embodiment will be described below, and the similarities will not be described in detail.
  • the difference from the first embodiment is that in the second embodiment, the light emitting element layer group 150 and the encapsulation layer 160 are spaced apart, and the at least one light modulation layer 110 includes a gap between the encapsulation layer 160 and the light emitting element layer group 150. Between the third light modulation layer 113.
  • the light emitting element layer group 150 includes a first electrode layer 151, a second electrode layer 152, a light emitting layer 153, a carrier layer 154, a pixel definition layer 155, and a light extraction layer 156.
  • the first electrode layer 151, the second electrode layer 152, and the light-emitting layer 153 extend in the main display area AA2 and are arranged to avoid the light-transmitting area TA, and the carrier layer 154 and the light extraction layer 156 cover the light-transmitting area TA.
  • the light emitting element layer group 150 may not include the light extraction layer 156.
  • the third light modulation layer 113 is, for example, a lithium fluoride layer.
  • the third light modulation layer 113 can increase the transmittance of light with a predetermined wavelength between the encapsulation layer 160 and the light-emitting element layer group 150 (light extraction layer 156), thereby improving the transmittance of the light-transmitting area TA on the one hand.
  • the overall light transmittance on the other hand, can improve the uniformity of light transmission in each band, and improve the color fidelity of the transmitted light.
  • the display panel 100 may be a flexible display panel.
  • the encapsulation layer 160 is a thin-film encapsulation structure.
  • the encapsulation layer 160 includes at least one inorganic encapsulation layer and at least one organic encapsulation layer that are stacked.
  • the display panel 100 is a flexible display panel as an example for description.
  • the concept of the present application may not be limited to being applied to a flexible display panel, but can also be applied to a rigid display panel.
  • the display panel 100 may be a rigid display panel, wherein the encapsulation layer 160 may be an encapsulation cover made of glass or the like, and the light-emitting element layer group 150 and the encapsulation layer 160 are spaced apart, and at least one layer of
  • the modulation layer 110 includes a third light modulation layer 113 filled between the encapsulation layer 160 and the light-emitting element layer group 150.
  • the third light modulation layer 113 can be formed by inkjet printing, coating, or the like.
  • FIG. 5 is a schematic cross-sectional view of a display panel provided according to a third embodiment of the present application, wherein FIG. 5 illustrates a cross-section of a partial area of the display panel.
  • Most of the structure of the display panel provided by the third embodiment is the same as the display panel provided by the first embodiment.
  • the differences between the third embodiment and the first embodiment will be described below, and the similarities will not be described in detail.
  • the difference from the first embodiment is that in the third embodiment, the display panel 100 is a rigid display panel, and the encapsulation layer 160 is an encapsulation cover made of glass or the like.
  • the display panel 100 further includes a vacuum layer 170, which is located between the light-emitting element layer group 150 and the encapsulation layer 160.
  • the at least one light modulation layer 110 includes at least any one of the following: a fourth light modulation layer 114 and a fifth light modulation layer 115, wherein the fourth light modulation layer 114 is located between the light-emitting element layer group 150 and the vacuum layer 170; The five-light modulation layer 115 is located between the encapsulation layer 160 and the vacuum layer 170.
  • at least one light modulation layer 110 includes the fourth light modulation layer 114 and the fifth light modulation layer 115 at the same time.
  • the fourth light modulation layer 114 is a lithium fluoride layer, which can be formed by evaporation, electron beam evaporation, or the like.
  • the fifth light modulation layer 115 is a magnesium fluoride layer, which can be formed by magnetron sputtering, electron beam evaporation, or the like.
  • the fourth light modulation layer 114 and/or the fifth light modulation layer 115 may be obtained by integrating on the encapsulation layer 160 supplied.
  • the fourth light modulation layer 114 may be another material layer whose refractive index is lower than that of the film layer (light extraction layer 156) closest to the vacuum layer 170 in the light-emitting element layer group 150;
  • the five-light modulation layer 115 may be another material layer with a refractive index lower than that of the encapsulation layer 160.
  • the fourth light modulation layer 114 can increase the transmittance of light with a predetermined wavelength between the light-emitting element layer group 150 and the vacuum layer 170, and the fifth light modulation layer 115 can increase the light with a predetermined wavelength between the encapsulation layer 160 and the vacuum layer 170. Transmittance between time.
  • the overall light transmittance of the light transmission area TA is increased, and the interference of the encapsulation layer 160 on the chromaticity fidelity of the transmitted light is reduced.
  • the modulation layer 110 can be provided at the substrate 120, the buffer layer 130, and the encapsulation layer 160 respectively, and the above embodiments can be combined with each other if the technical solutions do not conflict.
  • at least one light modulation layer 110 of the display panel 100 includes a first light modulation layer 111, a fourth light modulation layer 114, and a fifth light modulation layer 115, and the first light modulation layer 111 is sandwiched between the substrate Between the bottom 120 and the buffer layer 130, the fourth light modulation layer 114 is located between the light-emitting element layer group 150 and the vacuum layer 170, and the fifth light modulation layer 115 is located between the encapsulation layer 160 and the vacuum layer 170.
  • the multiple film layers of the device layer group 140 may include multiple wiring layers for wiring.
  • the wiring layer may be made of metal and configured as a non-transmissive layer.
  • the multiple film layers of the device layer group 140 It may also include light-transmitting layers such as a capacitor dielectric layer, a gate insulating layer, and an interlayer dielectric layer. At least one of the light-transmitting layers such as the capacitor dielectric layer, the gate insulating layer, and the interlayer dielectric layer may be arranged to cover the light-transmitting area TA.
  • FIG. 6 is a schematic cross-sectional view of a display panel according to a fourth embodiment of the present application, wherein FIG. 6 illustrates a cross-section of a partial area of the display panel.
  • Most of the structure of the display panel provided by the fourth embodiment is the same as the display panel provided by the first embodiment.
  • the differences between the fourth embodiment and the first embodiment will be described below, and the similarities will not be described in detail.
  • FIG. 6 exemplarily shows the gate insulating layer 142 and the interlayer dielectric layer 144 included in the device layer group 140, and the interlayer dielectric layer 144 is located on the side of the gate insulating layer 142 away from the substrate 120.
  • the gate insulating layer 142 and the interlayer dielectric layer 144 are configured as light-transmitting layers, which extend to the main display area AA2 and also cover the light-transmitting area TA.
  • the device layer group 140 may also include a wiring layer, a flat layer and other film layers.
  • the device layer group 140 includes a thin film transistor, and the thin film transistor includes an active layer 149.
  • the gate insulating layer 142 is arranged to cover the active layer 149, that is, the gate insulating layer 142 is located on the side of the active layer 149 away from the substrate 120.
  • At least one light modulation layer 110 includes a sixth light modulation layer 116.
  • the sixth light modulation layer 116 includes a first portion 116a located in the light-transmitting area TA and a second portion 116b located in the main display area AA2.
  • the second portion 116 b of the sixth light modulation layer 116 is located on the side of the active layer 149 away from the substrate 120.
  • the first portion 116a of the sixth light modulation layer 116 is sandwiched between the gate insulating layer 142 and the interlayer dielectric layer 144.
  • the first portion 116a of the sixth light modulation layer 116 is configured to increase the transmittance of light of a predetermined wavelength between adjacent light-transmitting layers sandwiching the first portion 116a.
  • the second portion 116b of the sixth light modulation layer 116 is configured to reduce the transmittance of light between adjacent film layers sandwiching the second portion 116b. Therefore, in the light-transmitting area TA, the first portion 116a of the sixth light modulation layer 116 can increase the overall light transmittance of the light-transmitting area TA, and can improve the uniformity of light transmission in each wavelength band, and improve the color fidelity of the transmitted light. .
  • the active layer 149 of the thin film transistor is usually a semiconductor material, which has a photoelectric effect on light.
  • the light transmittance of the second portion 116b of the sixth light modulation layer 116 is reduced, and the light emitting element layer group 150 can be reduced.
  • external light propagates to the active layer 149, thereby reducing the influence of light on the channel of the active layer 149 and improving the stability of the thin film transistor.
  • first portion 116a and the second portion 116b of the sixth light modulation layer 116 can make the two have different light transmittance properties.
  • the first portion 116a and the second portion 116b of the sixth light modulation layer 116 may be configured with different refractive indexes.
  • the thickness of the second portion 116b of the sixth light modulation layer 116 is different from the thickness of the first portion 116a of the sixth light modulation layer 116, so that the first portion 116a is configured to increase the preset wavelength of light between the The transmittance between adjacent light-transmitting layers of the first portion 116a, and the second portion 116b is configured to reduce the transmittance of light between adjacent film layers sandwiching the second portion 116b.
  • the seventh modulation layer may also include a first portion located in the light-transmitting area TA. And the second part located in the main display area AA2.
  • the first part and the second part of the seventh modulation layer are both configured to increase the transmittance of light of a predetermined wavelength between adjacent film layers sandwiching the seventh modulation layer, so that the light-emitting element layer group 150 and the outside After the light passes through the active layer 149, the light reflected back to the active layer 149 is reduced, which improves the stability of the thin film transistor.
  • the light-transmitting area is the secondary display area.
  • Figures 7 and 8 are respectively a schematic top view and a schematic cross-sectional view of a display panel according to a fifth embodiment of the present application.
  • Figure 8 shows a cross-section of a partial area of the display panel, and the CC line in Figure 7 shows the cutting position of the schematic cross-sectional view.
  • the display panel 100 includes a secondary display area AA1 and a main display area AA2.
  • the secondary display area AA1 can also be regarded as a light-transmitting area, and its light transmittance is greater than that of the main display area AA2.
  • the main display area AA2 is arranged around a part of the periphery of the secondary display area AA1.
  • the main display area AA2 may be arranged around the entire periphery of the secondary display area AA1.
  • the secondary display area AA1 has a polygonal shape.
  • the secondary display area AA1 may have other shapes such as a circle, a fan, and the like.
  • the display panel 100 includes a plurality of film layers arranged in a stack, and some of the film layers are configured as light-transmitting layers. It is understood that the remaining part of the film layers may be configured as non-light-transmitting layers.
  • Floor At least a part of the light-transmitting layer covers the sub-display area AA1.
  • the light transmittance of the secondary display area AA1 is greater than or equal to 15%.
  • the light transmittance of each light-transmitting layer of the display panel 100 covering the sub-display area AA1 in this embodiment More than 80%, even at least part of the light transmittance of the light-transmitting layer is greater than 90%.
  • the light transmittance of the secondary display area AA1 is greater than the light transmittance of the main display area AA2, so that the display panel 100 can integrate photosensitive components on the back of the secondary display area AA1 to realize, for example, a photosensitive component of a camera.
  • the secondary display area AA1 can display images, which increases the display area of the display panel 100 and realizes the full-screen design of the display device.
  • the display panel 100 of the embodiment of the present application among the multiple film layers of the display panel 100, at least a part of the light-transmitting layer covers the sub-display area AA1.
  • the film layer stack structure of the sub-display area AA1 usually transmits light of some wavelengths. The rate is higher, and the transmittance to some wavelengths of light is lower.
  • the display panel of the embodiment of the present application includes at least one light modulation layer 110, and each light modulation layer 110 is sandwiched between any adjacent light-transmitting layers covering the sub-display area AA1, and the light modulation layer 110 is configured to be capable of at least partially The transmittance of light with a predetermined wavelength between adjacent light-transmitting layers sandwiching the light modulation layer 110 is improved.
  • the transmittance of some wavelengths of light with lower transmittance can be increased to be close to or equal to the transmittance of wavelengths with higher transmittance, and the uniformity of spectrum transmission can be improved. Improve the color fidelity of transmitted light.
  • the display panel 100 may further include a substrate 120, a device layer group 140, a light emitting element layer group 150, and an encapsulation layer 160.
  • the substrate 120 is configured as a light-transmitting layer.
  • the display panel 100 is a flexible display panel, and the substrate 120 is, for example, flexible and transparent made of materials such as polyimide (PI) and polyethylene terephthalate (PET). Substrate.
  • the substrate 120 may also be a rigid transparent substrate made of materials such as glass.
  • the device layer group 140 is located on the substrate 120.
  • the device layer group 140 includes a plurality of device sublayers, and at least some of the plurality of device sublayers are configured as light-transmitting layers.
  • the light emitting element layer group 150 is located on the side of the device layer group 140 away from the substrate 120.
  • the encapsulation layer 160 is located on a side of the light-emitting element layer group 150 away from the substrate 120, and the encapsulation layer 160 is configured as a light-transmitting layer.
  • the substrate 120, the light-emitting element layer group 150, and the encapsulation layer 160 in the device layer group 140 cover the sub-display area AA1, so that at least a part of the display panel 100 in the sub-display area AA1 is multiple
  • the laminated structure of the light-transmitting layer ensures that the secondary display area AA1 has a high light transmittance.
  • an image acquisition device such as a camera
  • the device layer group 140 includes a buffer layer 130, a gate insulating layer 142, a capacitor dielectric layer 143, and a planarization layer 145.
  • the buffer layer 130 is located on the substrate 120.
  • the gate insulating layer 142 is located on the side of the buffer layer 130 away from the substrate 120.
  • the capacitor dielectric layer 143 is located on the side of the gate insulating layer 142 away from the substrate 120.
  • the interlayer dielectric layer 144 is located on the side of the capacitor dielectric layer 143 away from the substrate 120.
  • the planarization layer 145 is located on the side of the interlayer dielectric layer 144 away from the substrate 120.
  • the buffer layer 130, the gate insulating layer 142, the capacitor dielectric layer 143, the interlayer dielectric layer 144, and the planarization layer 145 are configured as light-transmitting layers, and the buffer layer 130, the gate insulating layer 142, and the capacitor dielectric layer 143 , Or at least one of the interlayer dielectric layer 144 covers the secondary display area AA1.
  • the buffer layer 130, the gate insulating layer 142, the capacitor dielectric layer 143, and the interlayer dielectric layer 144 all extend simultaneously in the secondary display area AA1 and the main display area AA2.
  • FIG. 9 is a partial enlarged schematic diagram of area D in FIG. 7.
  • the display panel 100 further includes a first light-emitting element SP1, a second light-emitting element SP2, a first pixel circuit PC1, and a second pixel circuit PC2.
  • the first light-emitting element SP1 and the second light-emitting element SP2 are located in the light-emitting element layer group 150.
  • the first light-emitting element SP1 is disposed in the sub-display area AA1, and the second light-emitting element SP2 is disposed in the main display area AA2.
  • the first pixel circuit PC1 and the second pixel circuit PC2 are located in the device layer group 140.
  • the first pixel circuit PC1 is electrically connected to the first light-emitting element SP1, and is used to drive the first light-emitting element SP1 to display.
  • the second pixel circuit PC2 is electrically connected to the second light-emitting element SP2 for driving the second light-emitting element SP2 to display.
  • the first pixel circuit PC1 and the second pixel circuit PC2 are both arranged in the main display area AA2. At least part of the structure of the first pixel circuit PC1 and the second pixel circuit PC2 has low light transmittance or opacity. By arranging the first pixel circuit PC1 and the second pixel circuit PC2 in the main display area AA2, the secondary display is reduced.
  • the wiring structure in the area AA1 further increases the light transmittance of the sub-display area AA1.
  • the device layer group 140 further includes a patterned semiconductor structure 146 and a patterned metal structure 147.
  • the patterned semiconductor structure 146 is located between the buffer layer 130 and the gate insulating layer 142.
  • the patterned metal structure 147 is located between the gate insulating layer 142 and the capacitor dielectric layer 143, and/or between the capacitor dielectric layer 143 and the interlayer dielectric layer 144, and/or is located between the interlayer dielectric layer 144 and the planarization layer 145 between.
  • the patterned semiconductor structure 146 and the patterned metal structure 147 can form the first pixel circuit PC1 and the second pixel circuit PC2 with the gate insulating layer 142, the capacitor dielectric layer 143, the interlayer dielectric layer 144 and other film layers.
  • the semiconductor structure 146 and the metal structure 147 are arranged in the main display area AA2 and arranged avoiding the secondary display area AA1, so that the first pixel circuit PC1 and the second pixel circuit PC2 are arranged in the main display area AA2 and arranged avoiding the secondary display area AA1 .
  • the device layer group 140 further includes a light-transmitting wire 148.
  • the light-transmitting wire 148 electrically connects the first pixel circuit PC1 and the first light-emitting element SP1. Wherein, at least part of the light-transmitting wire 148 is located in the secondary display area AA1.
  • the light-transmitting wire 148 may be made of materials such as indium tin oxide (Indium Tin Oxide, ITO) or indium zinc oxide (Indium Zinc Oxide, IZO).
  • the light emitting element layer group 150 includes a first electrode layer 151, a second electrode layer 152, and an emitting layer (EML) 153.
  • the second electrode layer 152 is located on the side of the first electrode layer 151 away from the substrate 120.
  • the light emitting layer 153 is located between the first electrode layer 151 and the second electrode layer 152.
  • One of the first electrode layer 151 and the second electrode layer 152 is an anode, and the other is a cathode.
  • the first electrode layer 151 is an anode and the second electrode layer 152 is a cathode as an example for description.
  • the first electrode layer 151 may be configured as a light-transmitting layer, or may be configured as a non-light-transmitting layer, or the first electrode layer 151 located in the secondary display area AA1 may be configured as a light-transmitting layer, which will be located in the main display area AA2.
  • the first electrode layer 151 is configured as a non-transmissive layer. When the first electrode layer 151 is configured as a light-transmitting layer, it may be made of ITO, IZO, or other materials.
  • the first electrode layer 151 may further include, for example, a first transparent conductive layer, a reflective layer on the first transparent conductive layer, and a second transparent conductive layer on the reflective layer.
  • Transparent conductive layer may be ITO or IZO layers, etc.
  • the reflective layer may be a metal layer, for example, made of silver material.
  • the second electrode layer 152 may be configured as a light-transmitting layer.
  • the second electrode layer 152 may be a magnesium-silver alloy layer.
  • the second electrode layer is the entire surface electrode layer.
  • the light-emitting element layer group 150 may further include a carrier layer, which is located between the first electrode layer 151 and the light-emitting layer 153, and/or between the light-emitting layer 153 and the second electrode layer 152. between.
  • the carrier layer may be configured as a light-transmitting layer.
  • the light-emitting element layer group 150 may not be provided with a carrier layer.
  • the carrier layer refers to a carrier-related film layer used to realize the functions of injection, transport, and blocking of carriers (holes or electrons).
  • the carrier layer between the first electrode layer 151 and the light emitting layer 153 may include a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer. At least one of layers (Electron Blocking Layer, EBL).
  • the carrier layer between the light-emitting layer 153 and the second electrode layer 152 may include an electron injection layer (Electron Inject Layer, EIL), an electron transport layer (Electron Transport Layer, ETL), and a hole blocking layer. At least one of (Hole Blocking Layer, HBL).
  • the light-emitting element layer group 150 may not be provided with a carrier layer; in some embodiments, the light-emitting element layer group 150 includes a carrier layer, but the carrier layer extends in the main display area AA2 and avoids The order display area AA1 is set. That is, in these embodiments, the secondary display area AA1 of the display panel 100 is not provided with a carrier layer. At this time, the light transmittance of the secondary display area AA1 of the display panel 100 to the blue wavelength band is significantly improved.
  • the light-emitting element layer group 150 further includes a pixel definition layer 155, and the pixel definition layer 155 is provided with a plurality of pixel openings.
  • the first electrode layer 151 may include a plurality of patterned first electrodes
  • the light-emitting layer 153 may include a plurality of patterned light-emitting blocks, wherein the pixel openings are arranged in a one-to-one correspondence with the first electrodes and the light-emitting blocks, and the pixel openings include the first electrodes. At least a part of the light-emitting block is located in the pixel opening.
  • Each first electrode and the light-emitting block on the side of the first electrode away from the substrate 120 and the second electrode layer 152 form a first light-emitting element SP1 or a second light-emitting element SP2.
  • the light-emitting element layer group 150 further includes a light extraction layer (Capping Layer) 156.
  • the light extraction layer 156 is located on the side of the second electrode layer 152 away from the substrate 120.
  • the light extraction layer 156 is configured as a light-transmitting layer, and the light extraction layer 156 covers the sub-display area AA1.
  • the light emitting element layer group 150 may not include the light extraction layer 156.
  • the buffer layer 130 covers the sub-display area AA1.
  • the buffer layer 130 includes a first sub-buffer layer 131 and a second sub-buffer layer 132 stacked, and the second sub-buffer layer 132 is located on a side of the first sub-buffer layer 131 away from the substrate 120.
  • the at least one light modulation layer 110 includes at least any one of the following: an eighth light modulation layer 118, a ninth light modulation layer 119, wherein the eighth light modulation layer 118 is sandwiched between the substrate 120 and the first sub-buffer layer 131 The ninth light modulation layer 119 is sandwiched between the first sub-buffer layer 131 and the second sub-buffer layer 132.
  • At least one light modulation layer 110 includes an eighth light modulation layer 118 and a ninth light modulation layer 119 at the same time.
  • the eighth light modulation layer 118 can increase the transmittance of light of the preset wavelength between the substrate 120 and the first sub-buffer layer 131
  • the ninth light modulation layer 119 can increase the light transmittance of the light of the preset wavelength between the first sub-buffer layer 131 and the first sub-buffer layer 131.
  • the transmittance between the second sub-buffer layers 132 on the one hand increases the overall light transmittance of the sub-display area AA1, and on the other hand, it can increase the transmittance of light of the preset wavelength with a lower light transmittance to
  • the light transmittance of wavelengths with higher light transmittance is close to or equal to, which improves the uniformity of light transmission in each waveband and improves the color fidelity of the transmitted light.
  • the first sub-buffer layer 131 may be a silicon nitride layer
  • the second sub-buffer layer 132 may be a silicon oxide layer.
  • the eighth light modulation layer 118 is a mixed film layer including at least two of silicon oxide, silicon nitride, and silicon.
  • the ninth light modulation layer 119 is a mixed film layer including at least two of silicon oxide, silicon nitride, and silicon.
  • the eighth light modulation layer 118 and the ninth light modulation layer 119 are both silicon oxynitride layers, that is, the eighth light modulation layer 118 and the ninth light modulation layer 119 are both formed of silicon oxide and silicon nitride.
  • the mixed film layer may be other mixed film layers, such as a mixed film layer of silicon oxide and silicon, a doped quartz film layer, and the like.
  • the eighth light modulation layer 118 and the ninth light modulation layer 119 can be formed by chemical vapor deposition (Chemical Vapor Deposition, CVD), magnetron sputtering, coating, etc., respectively, and can also be formed by coating on the incoming substrate 120. Get integrated.
  • the refractive index of the light modulation layer 110 is between the refractive indexes of the adjacent light-transmitting layers sandwiching the light modulation layer 110, so as to ensure that the light modulation layer 110 can improve the adjacent light-transmitting layers sandwiching the light modulation layer 110. Transmittance between light-transmitting layers.
  • the refractive index of the eighth light modulation layer 118 is between the refractive index of the substrate 120 and the refractive index of the first sub-buffer layer 131
  • the refractive index of the ninth light modulation layer 119 is between the refractive index of the substrate 120 and the first sub-buffer layer 131. Between the first sub-buffer layer 131 and the second sub-buffer layer 132.
  • the refractive index of the light modulation layer 110 satisfies the following formula:
  • n A is the refractive index of one of the adjacent light-transmitting layers sandwiching the light modulation layer 110;
  • n B is the refractive index of the other one of the adjacent light-transmitting layers sandwiching the light modulation layer 110;
  • n C is the refractive index of the light modulation layer 110;
  • ⁇ is the effective efficiency, and the effective efficiency ⁇ is greater than or equal to 60%.
  • the effective rate ⁇ is greater than or equal to 60%, which can ensure that the light modulation layer 110 can enhance the transmittance of light with a predetermined wavelength between adjacent light-transmitting layers.
  • the refractive index of the light modulation layer 110 satisfies the following formula:
  • n A is the refractive index of one of the adjacent light-transmitting layers sandwiching the light modulation layer 110;
  • n B is the refractive index of the other one of the adjacent light-transmitting layers sandwiching the light modulation layer 110;
  • n C is the refractive index of the light modulation layer 110.
  • the formula (5) is equivalent to the effective efficiency ⁇ in the formula (4) is configured to be 100%.
  • the refractive index n C of the light modulation layer 110 satisfies the formula (5), the refractive index n C of the light modulation layer 110 is obtained A better value, at this time, the light modulation layer 110 can greatly increase the transmittance of light with a predetermined wavelength between adjacent light-transmitting layers.
  • the effective efficiency ⁇ in the above formula (4) can be understood as the effective degree that the modulation performance of the light modulation layer 110 can achieve better modulation performance (modulation performance corresponding to a better value of refractive index n C).
  • the refractive index of the first sub-buffer layer 131 is substituted into n A in the formula (4), and the refractive index of the second sub-buffer layer 132 is substituted into the formula In (4) n B , the effective efficiency is, for example, 100%, and the better value of the refractive index n C of the ninth light modulation layer 119 is obtained at this time; the effective efficiency is, for example, 96%, and the effective efficiency is 96%.
  • the refractive index n C of the ninth light modulation layer 119 is, for example, 100%, and the better value of the refractive index n C of the ninth light modulation layer 119 is obtained at this time; the effective efficiency is, for example, 96%, and the effective efficiency is 96%.
  • each light modulation layer 110 includes a first portion located in the sub-display area AA1, and the thickness of the first portion satisfies the following formula:
  • the wavelength ⁇ of the light of the preset wavelength is the wavelength of the light to be adjusted, and its dimension is consistent with the dimension of the thickness T C of the first part of the light modulation layer 110, and the dimension is, for example, nanometers.
  • each light modulation layer 110 includes a first portion located in the secondary display area AA1, and at least one light modulation layer 110 includes a second portion located in the main display area AA2.
  • the ninth light modulation layer 119 includes a first portion 119a and a second portion 119b. Display area AA2.
  • the refractive index of the ninth light modulation layer 119 is substituted into the formula (6) n C
  • the wavelength of the light of the preset wavelength is substituted into the formula ( Substituting any natural number for ⁇ in 6) and M in formula (6)
  • the thickness T C of the first portion 119a of the light modulation layer 110 is obtained.
  • the wavelength ⁇ of the light of the preset wavelength is, for example, 500 nanometers.
  • the thickness T C of the first portion 119a of the light modulation layer 110 obtained at this time can increase the wavelength of the first portion 119a of the ninth light modulation layer 119 to 500.
  • the transmittance of nanometer light between the first sub-buffer layer 131 and the second sub-buffer layer 132 will also increase to a certain extent for light within a range of wavelengths close to 500 nanometers (for example, light with a wavelength of 490 nanometers). .
  • the transmittance of light with a wavelength of an integer multiple of 500 nanometers (for example, light with a wavelength of 1000 nanometers) between the first sub-buffer layer 131 and the second sub-buffer layer 132 will also increase.
  • the display panel 100 of the embodiment of the present application by providing the light modulation layer 110, on the one hand, due to its anti-reflection effect, the overall light transmittance of the sub-display area AA1 can be increased; on the other hand, the light modulation layer 110 can transmit the original
  • the transmittance of some wavelengths of light with a lower light rate is increased to be close to or even equal to the transmittance of wavelengths with a higher light transmittance, which improves the uniformity of spectrum transmission and improves the color fidelity of the transmitted light.
  • the at least one light modulation layer 110 includes both the first part located in the secondary display area AA1 and the second part located in the main display area AA2.
  • the film layers adjacent to the two surfaces of the secondary display area AA1 and the first part of the light modulation layer 110 may be the same or the same as the film layers adjacent to the two surfaces of the main display area AA2 and the second part of the light modulation layer 110 At least one layer is different.
  • the thickness of the second part of the light modulation layer 110 may be the same as or different from the thickness of the first part, and it is configured according to the modulation effect requirements of the light modulation layer 110 in the secondary display area AA1 and the main display area AA2.
  • the modulation effect of the second part and the first part are the same.
  • the modulation effect is different.
  • the light modulation layer 110 is provided at the buffer layer 130 as an example for description, so that the light at the buffer layer 130 can be enhanced and the interference of the buffer layer 130 on the chromaticity fidelity of the transmitted light can be reduced.
  • the light modulation layer 110 may also be disposed at other film layers of the display panel 100 to improve the interference of the other film layers on the fidelity of the chromaticity of the transmitted light.
  • FIG. 10 is a schematic cross-sectional view of a display panel according to a sixth embodiment of the present application, wherein FIG. 11 illustrates a cross-section of a partial area of the display panel 100.
  • FIG. 11 illustrates a cross-section of a partial area of the display panel 100.
  • Most of the structure of the display panel 100 provided in the seventh embodiment is the same as that of the display panel 100 provided in the fifth embodiment.
  • the differences between the sixth embodiment and the fifth embodiment will be described below, and the similarities will not be described in detail. Narrated.
  • the interlayer dielectric layer 144 and the planarization layer 145 cover the sub-display area AA1, and are stacked in the sub-display area AA1.
  • the interlayer dielectric layer 144 includes a first sublayer interlayer dielectric layer 1441 and a second sublayer dielectric layer 1442 that are stacked.
  • the second interlayer dielectric layer 144 is located on the side of the first interlayer dielectric layer 144 away from the substrate 120, and at least one light modulation layer 110 includes at least any of the following: the tenth light modulation layer 1110, the eleventh light Modulation layer 1111.
  • the tenth light modulation layer 1110 is sandwiched between the first interlayer dielectric layer 1441 and the second interlayer dielectric layer 1442.
  • the eleventh light modulation layer 1111 is sandwiched between the second interlayer dielectric layer 1442 and the planarization layer 145.
  • At least one light modulation layer 110 includes a tenth light modulation layer 1110 and an eleventh light modulation layer 1111 at the same time.
  • the tenth light modulation layer 1110 can increase the transmittance of light of a predetermined wavelength between the first interlayer dielectric layer 1441 and the second interlayer dielectric layer 1442.
  • the eleventh light modulation layer 1111 can increase the transmittance of light with a preset wavelength between the first interlayer dielectric layer 1441 and the second interlayer dielectric layer 1442, thereby improving the overall light transmittance of the sub-display area AA1 on the one hand
  • it can increase the transmittance of the light of the preset wavelength with the lower transmittance to be close to or equal to the transmittance of the wavelength of the higher transmittance, and improve the uniformity of the light transmission in each band. Improve the color fidelity of the transmitted light.
  • the first interlayer dielectric layer 1441 may be a silicon oxide layer
  • the second interlayer dielectric layer 1442 may be a silicon nitride layer.
  • the tenth light modulation layer 1110 is a mixed film layer including at least two of silicon oxide, silicon nitride, and silicon
  • the eleventh light modulation layer 1111 is a mixed film layer including at least two of silicon oxide, silicon nitride, and silicon .
  • the tenth light modulation layer 1110 and the eleventh light modulation layer 1111 are both silicon oxynitride layers, that is, the tenth light modulation layer 1110 and the eleventh light modulation layer 1111 are both silicon oxide and silicon nitride.
  • Mixed film layer for film formation In some other embodiments, the tenth light modulation layer 1110 and the eleventh light modulation layer 1111 may be other mixed film layers, such as a mixed film layer of silicon oxide and silicon, a doped quartz film layer, and the like.
  • the tenth light modulation layer 1110 and the eleventh light modulation layer 1111 may be formed by chemical vapor deposition (Chemical Vapor Deposition, CVD), magnetron sputtering, coating, etc., respectively.
  • FIG. 11 is a schematic cross-sectional view of a display panel according to a seventh embodiment of the present application, in which FIG. 11 shows a cross-section of a partial area of the display panel 100.
  • Most of the structure of the display panel 100 provided in the seventh embodiment is the same as that of the display panel 100 provided in the fifth embodiment.
  • the differences between the seventh embodiment and the fifth embodiment will be described below, and the similarities will not be described in detail. Narrated.
  • the difference from the fifth embodiment is that in the seventh embodiment, the light-emitting element layer group 150 and the encapsulation layer 160 are spaced apart, and at least one light modulation layer 110 includes a gap between the encapsulation layer 160 and the light-emitting element layer group 150. Between the twelfth light modulation layer 1112.
  • the light emitting element layer group 150 includes a first electrode layer 151, a second electrode layer 152, a light emitting layer 153, a pixel definition layer 155, and a light extraction layer 156. In some embodiments, the light emitting element layer group 150 may not include the light extraction layer 156.
  • the twelfth light modulation layer 1112 is, for example, a lithium fluoride layer.
  • the twelfth light modulation layer 1112 can increase the transmittance of light with a predetermined wavelength between the encapsulation layer 160 and the light emitting element layer group 150 (light extraction layer 156), thereby increasing the sub-display area AA1 on the one hand.
  • the overall light transmittance on the other hand, can improve the uniformity of light transmission in each band, and improve the color fidelity of the transmitted light.
  • the display panel 100 may be a flexible display panel 100.
  • the encapsulation layer 160 is a thin film encapsulation structure.
  • the encapsulation layer 160 includes at least one layer of inorganic encapsulation layer and at least one layer. Organic encapsulation layer.
  • the display panel 100 is a flexible display panel 100 as an example for description.
  • the concept of the present application may not be limited to being applied to the flexible display panel 100, but can also be applied to the rigid display panel 100.
  • the display panel 100 may be a rigid display panel 100, wherein the encapsulation layer 160 may be an encapsulation cover made of glass or the like, and the light-emitting element layer group 150 and the encapsulation layer 160 are spaced apart, and at least one layer
  • the light modulation layer 110 includes a twelfth light modulation layer 1112 filled between the encapsulation layer 160 and the light-emitting element layer group 150.
  • the twelfth light modulation layer 1112 can be formed by inkjet printing, coating, or the like.
  • FIG. 12 is a schematic cross-sectional view of a display panel 100 according to an eighth embodiment of the present application, in which FIG. 12 illustrates a cross-section of a partial area of the display panel 100.
  • FIG. 12 illustrates a cross-section of a partial area of the display panel 100.
  • Most of the structure of the display panel 100 provided by the eighth embodiment is the same as the display panel 100 provided by the fifth embodiment.
  • the differences between the eighth embodiment and the fifth embodiment will be described below, and the similarities will not be described in detail. Narrated.
  • the display panel 100 is a rigid display panel 100
  • the encapsulation layer 160 is an encapsulation cover made of glass or the like.
  • the display panel 100 further includes a vacuum layer 170, which is located between the light-emitting element layer group 150 and the encapsulation layer 160.
  • the at least one light modulation layer 110 includes at least any of the following: a thirteenth light modulation layer 1113, a fourteenth light modulation layer 1114, wherein the thirteenth light modulation layer 1113 is located between the light-emitting element layer group 150 and the vacuum layer 170 The fourteenth light modulation layer 1114 is located between the encapsulation layer 160 and the vacuum layer 170.
  • at least one light modulation layer 110 includes a thirteenth light modulation layer 1113 and a fourteenth light modulation layer 1114 at the same time.
  • the thirteenth light modulation layer 1113 is a lithium fluoride layer, which can be formed by evaporation, electron beam evaporation, or the like.
  • the fourteenth light modulation layer 1114 is a magnesium fluoride layer, which can be formed by magnetron sputtering, electron beam evaporation, or the like.
  • the thirteenth light modulation layer 1113 and/or the fourteenth light modulation layer 1114 can be obtained by integrating on the encapsulation layer 160 supplied.
  • the thirteenth light modulation layer 1113 may be another material layer whose refractive index is lower than that of the film layer (light extraction layer 156) closest to the vacuum layer 170 in the light emitting element layer group 150;
  • the fourteenth light modulation layer 1114 may be another material layer with a refractive index lower than that of the encapsulation layer 160.
  • the thirteenth light modulation layer 1113 can increase the transmittance of light with a predetermined wavelength between the light-emitting element layer group 150 and the vacuum layer 170, and the fourteenth light modulation layer 1114 can increase the light transmittance of the predetermined wavelength between the encapsulation layer 160 and the vacuum layer. The transmittance between 170.
  • the overall light transmittance of the sub-display area AA1 is increased, and the interference of the encapsulation layer 160 on the chromaticity fidelity of the transmitted light is reduced.
  • the modulation layer 110 may be provided at the buffer layer 130 and the encapsulation layer 160 respectively. Moreover, the foregoing embodiments can be combined with each other if the technical solutions do not conflict.
  • at least one light modulation layer 110 of the display panel 100 includes an eighth light modulation layer 118, a ninth light modulation layer 119, a thirteenth light modulation layer 1113, and a fourteenth light modulation layer 1114.
  • the eighth light modulation layer 118 is sandwiched between the substrate 120 and the first sub-buffer layer 131, the ninth light modulation layer 119 is sandwiched between the first sub-buffer layer 131 and the second sub-buffer layer 132, and the thirteenth
  • the light modulation layer 1113 is located between the light emitting element layer group 150 and the vacuum layer 170, and the fourteenth light modulation layer 1114 is located between the encapsulation layer 160 and the vacuum layer 170.
  • FIG. 13 is a schematic cross-sectional view of a display panel 100 provided according to a ninth embodiment of the present application.
  • FIG. 13 shows a cross section of a partial area of the display panel 100.
  • Most of the structure of the display panel 100 provided in the ninth embodiment is the same as the display panel 100 provided in the fifth embodiment.
  • the differences between the ninth embodiment and the fifth embodiment will be described below, and the similarities will not be described in detail. Narrated.
  • the device layer group 140 includes a buffer layer 130, a gate insulating layer 142, a capacitor dielectric layer 143, and a planarization layer 145.
  • the buffer layer 130 is located on the substrate 120.
  • the gate insulating layer 142 is located on the side of the buffer layer 130 away from the substrate 120.
  • the capacitor dielectric layer 143 is located on the side of the gate insulating layer 142 away from the substrate 120.
  • the interlayer dielectric layer 144 is located on the side of the capacitor dielectric layer 143 away from the substrate 120.
  • the planarization layer 145 is located on the side of the interlayer dielectric layer 144 away from the substrate 120.
  • the buffer layer 130, the gate insulating layer 142, the capacitor dielectric layer 143, the interlayer dielectric layer 144, and the planarization layer 145 are configured as light-transmitting layers. At least one of the buffer layer 130, the gate insulating layer 142, the capacitor dielectric layer 143, or the interlayer dielectric layer 144 covers the sub-display area AA1.
  • the buffer layer 130, the gate insulating layer 142, the capacitor dielectric layer 143, and the interlayer dielectric layer 144 all extend simultaneously in the secondary display area AA1 and the main display area AA2.
  • the device layer group 140 further includes a patterned semiconductor structure 146, and the patterned semiconductor structure 146 is located between the buffer layer 130 and the gate insulating layer 142.
  • the semiconductor structure 146 is arranged in the main display area AA2 and is arranged avoiding the secondary display area AA1.
  • the display panel 100 may include a first pixel circuit PC1 and a second pixel circuit PC2.
  • the first pixel circuit PC1 and the second pixel circuit PC2 respectively include a thin film transistor and a capacitor.
  • at least part of the patterned semiconductor structure 146 can be used to form an active layer of a thin film transistor.
  • At least one light modulation layer 110 includes a fifteenth light modulation layer 1115.
  • the fifteenth light modulation layer 1115 includes a first portion 1115a located in the secondary display area AA1 and a second portion 1115b located in the main display area AA2.
  • the second portion 1115b of the fifteenth light modulation layer 1115 is located on the side of the semiconductor structure 146 away from the substrate 120.
  • the first portion 1115a of the fifteenth light modulation layer 1115 is sandwiched between the gate insulating layer 142 and the capacitor dielectric layer 143.
  • the first portion 1115a of the fifteenth light modulation layer 1115 is configured to increase the transmittance of light of a predetermined wavelength between adjacent light-transmitting layers sandwiching the first portion 1115a
  • the second portion 1115b of the fifteenth light modulation layer 1115 is configured to reduce the light transmittance between adjacent film layers sandwiching the second portion 1115b. Therefore, in the sub-display area AA1, the first portion 1115a of the fifteenth light modulation layer 1115 can increase the overall light transmittance of the sub-display area AA1, and can improve the uniformity of light transmission in each band, and improve the color preservation of the transmitted light. Authenticity.
  • the light transmittance of the second portion 1115b of the fifteenth light modulation layer 1115 is reduced, which can reduce the light emitting element layer group 150 and the external light to the semiconductor structure. 146 propagates, thereby reducing the influence of light on the channel of the active layer 153 and improving the stability of the thin film transistor.
  • first portion 1115a and the second portion 1115b of the fifteenth light modulation layer 1115 are performed on the first portion 1115a and the second portion 1115b of the fifteenth light modulation layer 1115, so that the two have different light transmission properties.
  • the first portion 1115a and the second portion 1115b of the fifteenth light modulation layer 1115 may be configured with different refractive indexes.
  • the thickness of the second portion 1115b of the fifteenth light modulation layer 1115 is different from the thickness of the first portion 1115a of the fifteenth light modulation layer 1115, so that the first portion 1115a is configured to increase the light intensity of the preset wavelength.
  • the transmittance between adjacent light-transmitting layers sandwiching the first portion 1115a, and the second portion 1115b is configured to reduce the light transmittance between the adjacent film layers sandwiching the second portion 1115b.
  • the sixteenth light modulation layer may also include a light modulation layer located in the sub-display area AA1.
  • the first part and the second part of the sixteenth light modulation layer are both configured to increase the transmittance of light of a predetermined wavelength between adjacent film layers sandwiching the seventh modulation layer, so that the light emitting element layer group 150 and After the external light passes through the semiconductor structure 146, the light reflected back to the semiconductor structure 146 is reduced, which improves the stability of the thin film transistor.

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Abstract

本申请公开了一种显示面板，显示面板包括主显示区和透光区，透光区为非主显示区域，显示面板包括层叠设置的多个膜层，多个膜层中的部分膜层被配置为透光层，至少部分层透光层覆盖透光区，显示面板包括：至少一层光调制层，每层光调制层夹设于覆盖透光区的任意相邻透光层之间，光调制层被配置为至少一部分能够提高预设波长光线在夹设光调制层的相邻透光层之间的透过率。根据本申请实施例的显示面板，能提高透光区的整体透光率，提高透过光线的色彩保真性。

Description

显示面板
相关申请的交叉引用
本申请要求2020年3月20日提交的、申请号为202010202602.0、发明名称为“显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
本申请要求2020年3月20日提交的、申请号为202010202595.4、发明名称为“显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示领域，具体涉及一种显示面板。
背景技术
随着电子设备的快速发展，用户对电子设备的屏占比的要求越来越高，使得电子设备的显示面板受到业界越来越多的关注。
传统的电子设备如手机、平板电脑等，由于需要集成诸如前置摄像头、听筒以及红外感应元件等。现有技术中，可通过在显示面板上设置透光区，外界光线可通过屏幕上的透光区进入位于屏幕下方的感光元件。然而，由于显示面板的透光区仍然具有若干膜层的堆叠，会对透光区的光线透过率有影响，存在对不同波长的光线，光线透过率差异较大的问题。
发明内容
本申请实施例提供一种显示面板，提高透光区对预设波长光线的透过率，从而降低对不同波长光线透过率的差异。
本申请实施例提供一种显示面板，包括主显示区和透光区，主显示区围绕透光区的至少部分外周设置，显示面板包括层叠设置的多个膜层，多 个膜层中的部分膜层被配置为透光层，至少部分层透光层覆盖透光区，显示面板包括：至少一层光调制层，每层光调制层夹设于覆盖透光区的任意相邻透光层之间，光调制层被配置为至少一部分能够提高预设波长光线在夹设光调制层的相邻透光层之间的透过率。
根据本申请实施例的显示面板，包括透光区，显示面板在透光区的背面可以集成感光组件，实现例如摄像头的感光组件的屏下集成，其中主显示区围绕透光区的至少部分外周设置，能够降低主显示区外周的非显示区的宽度，从而提高显示面板的显示面积占比。显示面板的透光区的透光膜层堆叠结构，通常对一些波长光线的透光率较高，对一些波长光线的透光率较低，本申请实施例的显示面板包括至少一层光调制层，光调制层被配置为至少一部分能够提高预设波长光线在夹设光调制层的相邻透光层之间的透过率，从而能将原本透光率较低的一些波长光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高光谱透过的均一性，提高透过光线的色彩保真性。
附图说明
通过阅读以下参照附图对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显，其中，相同或相似的附图标记表示相同或相似的特征，附图并未按照实际的比例绘制。
图1是根据本申请第一实施例提供的显示面板的俯视示意图；
图2是根据本申请第一实施例提供的显示面板的截面示意图；
图3是根据本申请第一实施例提供的显示面板对各波长的光线的透过率的曲线图；
图4是根据本申请第二实施例提供的显示面板的截面示意图；
图5是根据本申请第三实施例提供的显示面板的截面示意图；
图6是根据本申请第四实施例提供的显示面板的截面示意图。
图7是根据本申请第五实施例提供的显示面板的俯视示意图；
图8是根据本申请第五实施例提供的显示面板的截面示意图；
图9是图7中D区域的局部放大示意图；
图10是根据本申请第六实施例提供的显示面板的截面示意图；
图11是根据本申请第七实施例提供的显示面板的截面示意图；
图12是根据本申请第八实施例提供的显示面板的截面示意图；
图13是根据本申请第九实施例提供的显示面板的截面示意图。
具体实施方式
下面将详细描述本申请的各个方面的特征和示例性实施例，为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及具体实施例，对本申请进行进一步详细描述。应理解，此处所描述的具体实施例仅被配置为解释本申请，并不被配置为限定本申请。对于本领域技术人员来说，本申请可以在不需要这些具体细节中的一些细节的情况下实施。下面对实施例的描述仅仅是为了通过示出本申请的示例来提供对本申请更好的理解。
本申请实施例提供一种显示面板，该显示面板可以是有机发光二极管(Organic Light Emitting Diode，OLED)显示面板。该显示面板包括主显示区和透光区，主显示区围绕透光区的至少部分外周设置，显示面板包括层叠设置的多个膜层，多个膜层中的部分膜层被配置为透光层，至少部分层透光层覆盖透光区。显示面板包括至少一层光调制层，每层光调制层夹设于覆盖透光区的任意相邻透光层之间，光调制层被配置为至少一部分能够提高预设波长光线在夹设光调制层的相邻透光层之间的透过率。
根据本申请实施例的显示面板，包括透光区，显示面板在透光区的背面可以集成感光组件，实现例如摄像头的感光组件的屏下集成，其中主显示区围绕透光区的至少部分外周设置，能够降低主显示区外周的非显示区的宽度，从而提高显示面板的显示面积占比。显示面板的透光区的透光膜层堆叠结构，通常对一些波长光线的透光率较高，对一些波长光线的透光率较低，本申请实施例的显示面板包括至少一层光调制层，光调制层被配置为至少一部分能够提高预设波长光线在夹设光调制层的相邻透光层之间的透过率，从而能将原本透光率较低的一些波长光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高光谱透过的均一性，提高透过光线的色彩保真性。
在一些可选的实施例中，透光区为非显示区域。在一些可选的实施例中，透光区为次显示区。
以下将以透光区是非显示区域进行说明。
图1、图2分别是根据本申请第一实施例提供的显示面板的俯视示意图、截面示意图，其中图2绘示了显示面板部分区域的截面，图1中B-B线示出截面示意图的截取位置。显示面板100包括主显示区AA2和透光区TA，透光区TA为非显示区域，即透光区TA不形成发光元件，从而不显示。其中，主显示区AA2围绕透光区TA的至少部分外周设置，例如本实施例中，透光区TA为圆形结构，主显示区AA2围绕透光区TA的全部部分外周设置。
在一些实施例中，显示面板100在透光区TA的整体透光率为80％以上。
显示面板100包括层叠设置的多个膜层，多个膜层中的部分膜层被配置为透光层，另一部分膜层被配置为非透光层。其中非透光层延伸于主显示区AA2且避位透光区TA设置，至少部分层透光层覆盖透光区TA。即，在主显示区AA2，多个非透光层和多个透光层以预设排列方式层叠设置，在透光区TA，多个透光层层叠设置。在主显示区AA2，多个膜层能够形成发光元件，从而实现显示面板100在主显示区AA2的显示功能。
在本申请实施例的显示面板100中，显示面板100在透光区TA的背面可以集成感光组件，实现例如摄像头的感光组件的屏下集成。传统显示面板在集成感光组件时，需要在主显示区AA2的外周预留较宽的非显示区，以对应放置感光组件。本申请实施例的显示面板100中，主显示区AA2围绕透光区TA的至少部分外周设置，感光组件可以集成于透光区TA，能够降低主显示区AA2外周的非显示区的宽度，从而提高显示面板100的显示面积占比。显示面板100的多个膜层中，非透光层延伸于主显示区AA2且避位透光区TA设置，从而避免非透光层对透光区TA光线的遮挡，提高透光区TA的整体透光率。
显示面板100的透光区TA的透光膜层堆叠结构，通常对一些波长光线的透光率较高，对一些波长光线的透光率较低。本申请实施例的显示面 板100包括至少一层光调制层110，每层光调制层110夹设于覆盖透光区TA的任意相邻透光层之间，光调制层110被配置为至少一部分能够提高预设波长光线在夹设光调制层110的相邻透光层之间的透过率。通过设置光调制层110，能将原本透光率较低的一些波长光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高光谱透过的均一性，提高透过光线的色彩保真性。
请参考图2，显示面板100还可以包括衬底120、缓冲层130、器件层组140、发光元件层组150以及封装层160。
衬底120被配置为透光层。本实施例中，显示面板100为柔性显示面板，衬底120例如是聚酰亚胺(Polyimide，PI)、聚对苯二甲酸乙二醇酯(Polyethylene terephthalate，PET)等材料制成的柔性透明衬底。在其它一些实施例中，当显示面板100为硬性显示面板时，衬底120也可以是玻璃等材料制成的硬性透明衬底。
缓冲层130位于衬底120上，缓冲层130被配置为透光层。器件层组140位于缓冲层130背离衬底120的一侧。发光元件层组150位于器件层组140背离衬底120的一侧。封装层160位于发光元件层组150背离衬底120的一侧，封装层160被配置为透光层。
在本申请第一实施例中，衬底120、缓冲层130以及封装层160覆盖透光区TA，使得显示面板100在透光区TA为多个透光层的叠层结构，保证透光区TA具有较高的光线透过率，当在显示面板100的透光区TA一侧设置图像采集装置(例如是摄像头)时，能够满足图像采集装置的成像清晰度要求。
在一些实施例中，发光元件层组150包括第一电极层151、第二电极层152以及发光层(Emitting Layer，EML)153。第二电极层152位于第一电极层151的背离衬底120的一侧。发光层153位于第一电极层151与第二电极层152之间。第一电极层151、第二电极层152中的一者为阳极，另一者为阴极。本实施例中，以第一电极层151是阳极、第二电极层152是阴极为例进行说明。
第一电极层151可以被配置为透光层，也可以被配置为非透光层，本 实施例中，第一电极层151被配置为非透光层。第一电极层151进一步可以包括第一透光导电层、位于第一透光导电层上的反射层以及位于反射层上的第二透光导电层。其中第一透光导电层、第二透光导电层可以是氧化铟锡(Indium Tin Oxide，ITO)层或氧化铟锌(Indium Zinc Oxide，IZO)层等，反射层可以是金属层，例如是银材质制成。
第二电极层152可以被配置为透光层。在一些实施例中，第二电极113可以是镁银合金层。
在本实施例中，发光元件层组150还包括载流子层154，载流子层154位于第一电极层151与发光层153之间，和/或位于发光层153与第二电极层152之间。例如本实施例中，第一电极层151与发光层153之间、发光层153与第二电极层152之间均设有载流子层154。载流子层154被配置为透光层。在其它一些实施例中，发光元件层组150可以不设有载流子层154。
本文中，载流子层指用于实现载流子(空穴或电子)的注入、传输、阻挡等功能的载流子相关膜层。在一些实施例中，第一电极层151与发光层153之间的载流子层154可以包括空穴注入层(Hole Inject Layer，HIL)、空穴传输层(Hole Transport Layer，HTL)、电子阻挡层(Electron Blocking Layer，EBL)中的至少之一。在一些实施例中，发光层153与第二电极层152之间的载流子层154可以包括电子注入层(Electron Inject Layer，EIL)、电子传输层(Electron Transport Layer，ETL)、空穴阻挡层(Hole Blocking Layer，HBL)中的至少之一。
在一些实施例中，第一电极层151、第二电极层152以及发光层153延伸于主显示区AA2且避位透光区TA设置，载流子层154覆盖透光区TA。即，发光元件层组150中既有一部分膜层覆盖透光区TA，也有一部分膜层延伸于主显示区AA2且避位透光区TA设置，其中，尽管第二电极层152可以被配置为透光层，但一些实施例中第二电极层152对光线的吸收、反射程度也较高，因此第二电极层152避位透光区TA设置，可以进一步提高透光区TA的整体透光率。
在一些实施例中，发光元件层组150可以不设有载流子层154；在一些实施例中，发光元件层组150包括载流子层154，然而载流子层154延伸 于主显示区AA2且避位透光区TA设置。即在这些实施例中，显示面板100的透光区TA不设有载流子层154，此时显示面板100的透光区TA对蓝光波段的光线透过率显著提升。
在一些实施例中，发光元件层组150还包括像素定义层155，像素定义层155设有多个像素开口。第一电极层151可以包括图案化的多个第一电极，发光层153可以包括图案化的多个发光块，其中像素开口与第一电极、发光块一一对应设置，像素开口包括第一电极的至少一部分，发光块位于像素开口内。每个第一电极与在第一电极的背离衬底120的一侧依次设置的载流子层154、发光块、载流子层154以及第二电极层152形成发光元件。
在一些实施例中，发光元件层组150还包括光取出层(Capping Layer)156。光取出层156位于第二电极层152的背离衬底120的一侧，光取出层156被配置为透光层，光取出层156覆盖透光区TA。在一些实施例中，发光元件层组150也可以不包括光取出层156。
如图2，在本申请第一实施例中，至少一层光调制层110包括夹设于衬底120与缓冲层130之间的第一光调制层111。第一光调制层111能够提高预设波长光线在衬底120与缓冲层130之间的透过率，从而提高透光区TA的整体透光率，并将原本透光率较低的预设波长的光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高光谱透过的均一性，提高透过光线的色彩保真性。
可选地，在本申请第一实施例中，缓冲层130包括叠设的第一子缓冲层131和第二子缓冲层132。至少一层光调制层110包括夹设于第一子缓冲层131与第二子缓冲层132之间的第二光调制层112，第二光调制层112能够提高预设波长光线在第一子缓冲层131与第二子缓冲层132之间的透过率，从而一方面提高透光区TA的整体透光率，另一方面能够提高各波段光线透过的均一性，提高透过光线的色彩保真性。
第一子缓冲层131可以为氮化硅层，第二子缓冲层132可以为氧化硅层。第一光调制层111为包括氧化硅、氮化硅、硅中至少两种的混合膜层。第二光调制层112为包括氧化硅、氮化硅、硅中至少两种的混合膜层。通 过分别调节第一光调制层111、第二光调制层112的组成配比和厚度，能使第一光调制层111、第二光调制层112分别具有显著的增透作用。
在一个示例中，第一光调制层111、第二光调制层112均为氮氧化硅层，即第一光调制层111、第二光调制层112均为氧化硅与氮化硅共同成膜的混合膜层。在其它一些实施例中，第一光调制层111、第二光调制层112分别可以是其它混合膜层，例如是氧化硅和硅的混合膜层、可掺杂型石英膜层等。第一光调制层111、第二光调制层112分别可以通过化学气相沉积(Chemical Vapor Deposition，CVD)、磁控溅射、涂布等方式镀膜形成，也可以通过在来料的衬底120上集成得到。
在一些实施例中，光调制层110的折射率介于夹设光调制层110的相邻透光层的折射率之间，以保证光调制层110能提高夹设光调制层110的相邻透光层之间的透光率。例如，在上述第一实施例中，第一光调制层111的折射率介于衬底120的折射率与第一子缓冲层131(缓冲层130)的折射率之间，第二光调制层112的折射率介于第一子缓冲层131与第二子缓冲层132之间。
在一些实施例中，光调制层110的折射率满足以下式子：
Figure PCTCN2021070157-appb-000001
其中，n A为夹设光调制层110的相邻透光层中的一者的折射率；n B为夹设光调制层110的相邻透光层中的另一者的折射率；n C为光调制层110的折射率；α为有效率，有效率α大于等于60％。其中，有效率α的值越高，光调制层110的折射率n C越接近相邻透光层的折射率(n A、n B)的几何平均数
Figure PCTCN2021070157-appb-000002
有效率α大于等于60％，可以保证光调制层110能够将预设波长光线在相邻透光层之间的透过率增强。
在一些实施例中，光调制层110的折射率满足以下式子：
Figure PCTCN2021070157-appb-000003
其中，n A为夹设光调制层110的相邻透光层中的一者的折射率；n B为夹设光调制层110的相邻透光层中的另一者的折射率；n C为光调制层110的折射率。式(2)相当于将式(1)中的有效率α配置为100％得到，当光调制层110的折射率n C满足式(2)时，得到光调制层110的折射率n C的较 优值，此时光调制层110能够大幅提升预设波长光线在相邻透光层之间的透过率。上述式(1)中的有效率α可以理解为光调制层110的调制性能能够达到较优调制性能(折射率n C的较优值对应的调制性能)的有效程度。
以第二光调制层112的折射率的配置方式为例说明，其中将第一子缓冲层131的折射率代入式(1)中的n A、将第二子缓冲层132的折射率代入式(1)中的n B，有效率例如是100％，此时得到第二光调制层112的折射率n C的较优值；有效率例如是96％，此时得到有效率是96％时第二光调制层112的折射率n C。
在一些实施例中，每层光调制层110包括位于透光区TA的第一部分，该第一部分的厚度满足以下式子：
T C×n C＝(2M+1)×λ/4           (3)
其中，T C为光调制层110的第一部分的厚度；n C为光调制层110的折射率；λ为预设波长光线的波长；M为任意自然数。其中，预设波长光线的波长λ即所需调节波长光线的波长，其量纲与光调制层110的第一部分的厚度T C的量纲一致，量纲例如是纳米。
在一些实施例中，每层光调制层110包括位于透光区TA的第一部分，并且至少一层光调制层110包括位于主显示区AA2的第二部分。如图2，例如在本实施例中，第二光调制层112包括第一部分112a和第二部分112b，其中第二光调制层112的第一部分112a位于透光区TA，第二部分112b位于主显示区AA2。
以第二光调制层112的第一部分112a的厚度的配置方式为例说明，其中将第二光调制层112的折射率代入式(3)中n C、将预设波长光线的波长代入式(3)中的λ、将任意自然数代入式(3)中的M，得到光调制层110的第一部分112a的厚度T C。在一个示例中，预设波长光线的波长λ例如是500纳米，此时得到的光调制层110的第一部分112a的厚度T C，能使第二光调制层112的第一部分112a提高波长为500纳米的光线在第一子缓冲层131与第二子缓冲层132之间的透过率。根据光谱自身属性，波长邻近500纳米的一些范围内的光线(例如波长490纳米的光线)在第一子缓冲层131与第二子缓冲层132之间的透过率也会有一定程度的提升。并且，根据光 谱自身属性，波长为500纳米整数倍的光线(例如波长1000纳米的光线)在第一子缓冲层131与第二子缓冲层132之间的透过率也会提升。
根据本申请实施例的显示面板100，通过设置光调制层110，一方面由于其具有增透效果，能够提高透光区TA的整体透光率；另一方面，光调制层110能将原本透光率较低的一些波长光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高光谱透过的均一性，提高透过光线的色彩保真性。
图3是根据本申请第一实施例提供的显示面板对各波长的光线的透过率的曲线图。其中作为对比，还在图3中示出了一个对比例的显示面板对各波长的光线的透过率的曲线。其中，对比例除了不设有光调制层110外，剩余结构与本申请第一实施例的结构相同。通过椭偏仪，能够测得第一实施例的显示面板和对比例的显示面板对各波长的光线的透过率，并根据波长和透过率的对应关系得到图3所示的曲线图。图3中，曲线L1为第一实施例的显示面板对各波长的光线的透过率曲线，曲线L2为对比例的显示面板对各波长的光线的透过率曲线。
根据第一实施例的显示面板与对比例的显示面板之间的对比，对比例的显示面板的透光区对光线的整体透过率为76.12％，本申请第一实施例的显示面板的透光区对光线的整体透过率为87.28％，可见通过设置光调制层110，能够显著提高显示面板的透光区的整体透光率。测试第一实施例的显示面板、对比例的显示面板的透过光谱的均一性，其中，对比例的显示面板对410纳米(nm)至780nm波长光线的透过率的标准差为0.08，第一实施例的显示面板对410nm至780nm波长光线的透过率的标准差为0.01，可见通过设置光调制层110，能够显著提高显示面板的透过光谱的均一性。
如前所述，至少一层光调制层110既包括位于透光区TA的第一部分，也包括位于主显示区AA2的第二部分。在透光区TA与光调制层110第一部分的两个表面紧邻的膜层，与在主显示区AA2与光调制层110第二部分的两个表面紧邻的膜层可能是相同的，也可能至少一层不同。光调制层110的第二部分的厚度与第一部分的厚度可以相同，也可以不同，根据光调制层110在透光区TA和主显示区AA2的调制效果需求进行配置。当第 一部分的两个表面紧邻的膜层和第二部分的两个表面紧邻的膜层相同，且第二部分的厚度与第一部分的厚度相同时，第二部分与第一部分的调制效果相同。当第一部分的两个表面紧邻的膜层与第二部分的两个表面紧邻的膜层至少一层不同，和/或第二部分的厚度与第一部分的厚度不同时，第二部分与第一部分的调制效果不同。
在上述实施例中，以光调制层110设置于衬底120及缓冲层130处为例进行了说明，从而能够降低衬底120及缓冲层130处对透过光线色度保真性的干扰。光调制层110还可以设置于显示面板的其它膜层处，用于改善其它膜层处对透过光线色度保真性的干扰。
图4是根据本申请第二实施例提供的显示面板的截面示意图，其中图4绘示了显示面板部分区域的截面。第二实施例提供的显示面板的大部分结构与第一实施例提供的显示面板相同，以下将对第二实施例与第一实施例的不同之处进行说明，相同之处不再详述。
与第一实施例不同的是，在第二实施例中，发光元件层组150与封装层160之间间隔设置，至少一层光调制层110包括填充于封装层160与发光元件层组150之间的第三光调制层113。
在本实施例中，发光元件层组150包括第一电极层151、第二电极层152、发光层153、载流子层154、像素定义层155以及光取出层156。第一电极层151、第二电极层152以及发光层153延伸于主显示区AA2且避位透光区TA设置，载流子层154、光取出层156覆盖透光区TA。在一些实施例中，发光元件层组150也可以不包括光取出层156。
第三光调制层113例如是氟化锂层。在本实施例中，第三光调制层113能够提高预设波长光线在封装层160与发光元件层组150(光取出层156)之间的透过率，从而一方面提高透光区TA的整体透光率，另一方面能够提高各波段光线透过的均一性，提高透过光线的色彩保真性。
本实施例中，显示面板100可以是柔性显示面板。相应地，封装层160为薄膜封装结构，在一些实施例中，封装层160包括叠层设置的至少一层无机封装层和至少一层有机封装层。
在上述实施例中，以显示面板100是柔性显示面板为例进行说明，然 而本申请构思可以不限于应用于柔性显示面板，也可应用于硬性显示面板。例如在上述第二实施例中，显示面板100可以是硬性显示面板，其中封装层160可以是玻璃等材质的封装盖板，发光元件层组150与封装层160之间间隔设置，至少一层光调制层110包括填充于封装层160与发光元件层组150之间的第三光调制层113。第三光调制层113可以通过喷墨打印、涂布等方式形成。
图5是根据本申请第三实施例提供的显示面板的截面示意图，其中图5绘示了显示面板部分区域的截面。第三实施例提供的显示面板的大部分结构与第一实施例提供的显示面板相同，以下将对第三实施例与第一实施例的不同之处进行说明，相同之处不再详述。
与第一实施例不同的是，在第三实施例中，显示面板100为硬性显示面板，封装层160是玻璃等材质的封装盖板。
此外，显示面板100还包括真空层170，真空层170位于发光元件层组150与封装层160之间。
至少一层光调制层110包括以下中的至少任一：第四光调制层114、第五光调制层115，其中第四光调制层114位于发光元件层组150与真空层170之间；第五光调制层115位于封装层160与真空层170之间。例如本实施例中，至少一层光调制层110同时包括第四光调制层114和第五光调制层115。
在一些实施例中，第四光调制层114为氟化锂层，可以通过蒸镀、电子束蒸发等方式成膜。在一些实施例中，第五光调制层115为氟化镁层，可以通过磁控溅射、电子束蒸发等方式成膜。在一些实施例中，第四光调制层114和/或第五光调制层115可以通过在来料的封装层160上集成得到。
在其它一些实施例中，第四光调制层114可以是其它折射率低于发光元件层组150中最靠近真空层170的一层膜层(光取出层156)的折射率的材料层；第五光调制层115可以是其它折射率低于封装层160的折射率的材料层。
第四光调制层114能够提高预设波长光线在发光元件层组150与真空层170之间的透过率，第五光调制层115能够提高预设波长光线在封装层 160与真空层170之间的透过率。通过设置第四光调制层114和/或第五光调制层115，提高透光区TA的整体透光率，并且降低封装层160处对透过光线色度保真性的干扰。
在上述实施例中，分别说明了在衬底120及缓冲层130处、封装层160处分别可以设置调制层110，并且，上述实施例在技术方案不冲突的情况下可以相互组合。例如在一个实施例中，显示面板100的至少一层光调制层110包括第一光调制层111、第四光调制层114以及第五光调制层115，第一光调制层111夹设于衬底120与缓冲层130之间，第四光调制层114位于发光元件层组150与真空层170之间，第五光调制层115位于封装层160与真空层170之间。
此外，器件层组140的多个膜层中，可以包括用于布线的多个布线层，其中布线层可以是金属制成，被配置为非透光层，器件层组140的多个膜层还可以包括电容介质层、栅绝缘层、层间介质层等透光层。电容介质层、栅绝缘层、层间介质层等透光层中的至少一层可以覆盖透光区TA设置。
图6是根据本申请第四实施例提供的显示面板的截面示意图，其中图6绘示了显示面板部分区域的截面。第四实施例提供的显示面板的大部分结构与第一实施例提供的显示面板相同，以下将对第四实施例与第一实施例的不同之处进行说明，相同之处不再详述。
图6中示例性绘示了器件层组140包括的栅绝缘层142以及层间介质层144，层间介质层144位于栅绝缘层142的背离衬底120的一侧。其中栅绝缘层142、层间介质层144被配置为透光层，并且即延伸与主显示区AA2，也覆盖透光区TA设置。可以理解的是，尽管图中未示出，器件层组140还可以包括布线层、平坦层等其他膜层。
在一些实施例中，器件层组140包括薄膜晶体管，薄膜晶体管包括有源层149。本实施例中，栅绝缘层142覆盖有源层149设置，即栅绝缘层142位于有源层149的背离衬底120的一侧。至少一层光调制层110包括第六光调制层116。第六光调制层116包括位于透光区TA的第一部分116a以及位于主显示区AA2的第二部分116b。第六光调制层116的第二部分116b位于有源层149的背离衬底120的一侧。本实施例中，在透光区TA， 第六光调制层116的第一部分116a夹设于栅绝缘层142与层间介质层144之间。
在本实施例中，在透光区TA，第六光调制层116的第一部分116a被配置为能够提高预设波长光线在夹设第一部分116a的相邻透光层之间的透过率。在主显示区AA2，第六光调制层116的第二部分116b被配置为能够降低光线在夹设第二部分116b的相邻膜层之间的透过率。因此，在透光区TA，第六光调制层116的第一部分116a能提高透光区TA的整体透光率，且能够提高各波段光线透过的均一性，提高透过光线的色彩保真性。在主显示区AA2，薄膜晶体管的有源层149通常为半导体材料，存在对光的光电效应，通过第六光调制层116的第二部分116b对透光率降低，能够降低发光元件层组150以及外界的光线向有源层149传播，从而降低光线对有源层149沟道的影响，提高薄膜晶体管的稳定性。
对第六光调制层116的第一部分116a、第二部分116b分别进行不同的配置，可以使得两者具有不同的透光性能。在一些实施例中，可以对第六光调制层116的第一部分116a、第二部分116b分别配置不同的折射率。在一些实施例中，第六光调制层116的第二部分116b的厚度与第六光调制层116的第一部分116a的厚度不同，使得第一部分116a被配置为能够提高预设波长光线在夹设第一部分116a的相邻透光层之间的透过率，第二部分116b被配置为能够降低光线在夹设第二部分116b的相邻膜层之间的透过率。
在一些实施例中，当至少一层光调制层110包括位于有源层149的朝向衬底120一侧的第七调制层时，第七调制层也以可以包括位于透光区TA的第一部分以及位于主显示区AA2的第二部分。其中第七调制层的第一部分和第二部分均被配置为能够提高预设波长光线在夹设第七调制层的相邻膜层之间的透过率，使得发光元件层组150以及外界的光线穿过有源层149后，再次反射回有源层149的光线减少，提高薄膜晶体管的稳定性。
以下将以透光区是次显示区进行说明。
图7、图8分别是根据本申请第五实施例提供的显示面板的俯视示意图、截面示意图，其中图8绘示了显示面板部分区域的截面，图7中C-C 线示出截面示意图的截取位置。显示面板100包括次显示区AA1和主显示区AA2。次显示区AA1亦可视为透光区，其透光率大于主显示区AA2的透光率。本实施例中，主显示区AA2围绕次显示区AA1的部分外周设置，在其它一些实施例中，主显示区AA2可以围绕次显示区AA1的全部外周设置。本实施例中，次显示区AA1呈多边形，在其它一些实施例中，次显示区AA1可以呈圆形、扇形等其它形状。
显示面板100包括层叠设置的多个膜层，多个膜层中的部分膜层被配置为透光层，可以理解的是，多个膜层中的剩余一部分膜层可以被配置为非透光层。至少部分层透光层覆盖次显示区AA1。
本文中，次显示区AA1的透光率大于等于15％。为确保次显示区AA1的透光率大于15％，甚至大于40％，甚至具有更高的透光率，本实施例中显示面板100的覆盖次显示区AA1的各透光层的透光率大于80％，甚至至少部分透光层的透光率均大于90％。
根据本申请实施例的显示面板100，次显示区AA1的透光率大于主显示区AA2的透光率，使得显示面板100在次显示区AA1的背面可以集成感光组件，实现例如摄像头的感光组件的屏下集成，同时次显示区AA1能够显示画面，提高显示面板100的显示面积，实现显示装置的全面屏设计。
根据本申请实施例的显示面板100，显示面板100的多个膜层中，至少部分层透光层覆盖次显示区AA1，次显示区AA1的膜层堆叠结构，通常对一些波长光线的透光率较高，对一些波长光线的透光率较低。本申请实施例的显示面板包括至少一层光调制层110，每层光调制层110夹设于覆盖次显示区AA1的任意相邻透光层之间，光调制层110被配置为至少一部分能够提高预设波长光线在夹设光调制层110的相邻透光层之间的透过率。通过设置光调制层110，能将原本透光率较低的一些波长光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高光谱透过的均一性，提高透过光线的色彩保真性。
请参考图8，显示面板100还可以包括衬底120、器件层组140、发光元件层组150以及封装层160。
衬底120被配置为透光层。本实施例中，显示面板100为柔性显示面 板，衬底120例如是聚酰亚胺(Polyimide，PI)、聚对苯二甲酸乙二醇酯(Polyethylene terephthalate，PET)等材料制成的柔性透明衬底。在其它一些实施例中，当显示面板100为硬性显示面板时，衬底120也可以是玻璃等材料制成的硬性透明衬底。
器件层组140位于衬底120上，器件层组140包括多个器件子层，多个器件子层中的至少部分层被配置为透光层。发光元件层组150位于器件层组140背离衬底120的一侧。封装层160位于发光元件层组150背离衬底120的一侧，封装层160被配置为透光层。其中，器件层组140中至少部分层透光层、衬底120、发光元件层组150以及封装层160覆盖次显示区AA1，使得显示面板100在次显示区AA1内的至少部分区域为多个透光层的叠层结构，保证次显示区AA1具有较高的光线透过率，当在显示面板100的次显示区AA1一侧设置图像采集装置(例如是摄像头)时，能够满足图像采集装置的成像清晰度要求。
在本实施例中，器件层组140包括缓冲层130、栅绝缘层142、电容介质层143以及平坦化层145。缓冲层130位于衬底120上。栅绝缘层142位于缓冲层130背离衬底120的一侧。电容介质层143位于栅绝缘层142背离衬底120的一侧。层间介质层144位于电容介质层143背离衬底120的一侧。平坦化层145位于层间介质层144背离衬底120的一侧。
在一些实施例中，缓冲层130、栅绝缘层142、电容介质层143、层间介质层144以及平坦化层145被配置为透光层，缓冲层130、栅绝缘层142、电容介质层143、或层间介质层144中的至少一者覆盖次显示区AA1。例如本实施例中，缓冲层130、栅绝缘层142、电容介质层143、层间介质层144均同时延伸于次显示区AA1和主显示区AA2。
图9是图7中D区域的局部放大示意图，在一些实施例中，显示面板100还包括第一发光元件SP1、第二发光元件SP2、第一像素电路PC1和第二像素电路PC2。第一发光元件SP1和第二发光元件SP2位于发光元件层组150。第一发光元件SP1设置于次显示区AA1，第二发光元件SP2设置于主显示区AA2。第一像素电路PC1和第二像素电路PC2位于器件层组140。第一像素电路PC1与第一发光元件SP1电连接，用于驱动第一发光 元件SP1显示。第二像素电路PC2与第二发光元件SP2电连接，用于驱动第二发光元件SP2显示。其中，第一像素电路PC1、第二像素电路PC2均设置于主显示区AA2。第一像素电路PC1、第二像素电路PC2的至少部分结构透光率较低或不透光，通过将第一像素电路PC1、第二像素电路PC2均设置于主显示区AA2，从而减少次显示区AA1内的布线结构，进而提高次显示区AA1的透光率。
如图8，在一些实施例中，器件层组140还包括图案化的半导体结构146以及图案化的金属结构147。图案化的半导体结构146位于缓冲层130与栅绝缘层142之间。图案化的金属结构147位于栅绝缘层142与电容介质层143之间、和/或位于电容介质层143与层间介质层144之间、和/或位于层间介质层144与平坦化层145之间。图案化的半导体结构146以及图案化的金属结构147能够和栅绝缘层142、电容介质层143、层间介质层144等膜层形成第一像素电路PC1、第二像素电路PC2。其中，半导体结构146、金属结构147设置于主显示区AA2并避位次显示区AA1设置，使得第一像素电路PC1、第二像素电路PC2设置于主显示区AA2并避位次显示区AA1设置。
如图8和图9，在一些实施例中，器件层组140还包括透光导线148。透光导线148将第一像素电路PC1与第一发光元件SP1电连接。其中，透光导线148的至少部分位于次显示区AA1。透光导线148可以是氧化铟锡(Indium Tin Oxide，ITO)或氧化铟锌(Indium Zinc Oxide，IZO)等材料制成。通过将连接第一像素电路PC1与第一发光元件SP1的导线设置为透光导线148，能够进一步提升次显示区AA1的透光率。
在一些实施例中，发光元件层组150包括第一电极层151、第二电极层152以及发光层(Emitting Layer，EML)153。第二电极层152位于第一电极层151的背离衬底120的一侧。发光层153位于第一电极层151与第二电极层152之间。第一电极层151、第二电极层152中的一者为阳极，另一者为阴极。本实施例中，以第一电极层151是阳极、第二电极层152是阴极为例进行说明。
第一电极层151可以被配置为透光层，也可以被配置为非透光层，还 可以是将位于次显示区AA1的第一电极层151配置为透光层、将位于主显示区AA2的第一电极层151配置为非透光层。当第一电极层151被配置为透光层时，其可以是ITO、IZO等材料制成。当第一电极层151被配置为非透光层时，第一电极层151例如可以进一步包括第一透光导电层、位于第一透光导电层上的反射层以及位于反射层上的第二透光导电层。其中第一透光导电层、第二透光导电层可以是ITO或IZO层等，反射层可以是金属层，例如是银材质制成。
第二电极层152可以被配置为透光层。在一些实施例中，第二电极层152可以是镁银合金层。在一些实施例中，第二电极层为整个面电极层。
在一些实施例中，发光元件层组150还可以包括载流子层，载流子层位于第一电极层151与发光层153之间，和/或位于发光层153与第二电极层152之间。载流子层可以被配置为透光层。在其它一些实施例中，发光元件层组150可以不设有载流子层。
本文中，载流子层指用于实现载流子(空穴或电子)的注入、传输、阻挡等功能的载流子相关膜层。在一些实施例中，第一电极层151与发光层153之间的载流子层可以包括空穴注入层(Hole Inject Layer，HIL)、空穴传输层(Hole Transport Layer，HTL)、电子阻挡层(Electron Blocking Layer，EBL)中的至少之一。在一些实施例中，发光层153与第二电极层152之间的载流子层可以包括电子注入层(Electron Inject Layer，EIL)、电子传输层(Electron Transport Layer，ETL)、空穴阻挡层(Hole Blocking Layer，HBL)中的至少之一。
在一些实施例中，发光元件层组150可以不设有载流子层；在一些实施例中，发光元件层组150包括载流子层，然而载流子层延伸于主显示区AA2且避位次显示区AA1设置。即在这些实施例中，显示面板100的次显示区AA1不设有载流子层，此时显示面板100的次显示区AA1对蓝光波段的光线透过率显著提升。
在一些实施例中，发光元件层组150还包括像素定义层155，像素定义层155设有多个像素开口。第一电极层151可以包括图案化的多个第一电极，发光层153可以包括图案化的多个发光块，其中像素开口与第一电 极、发光块一一对应设置，像素开口包括第一电极的至少一部分，发光块位于像素开口内。每个第一电极与在第一电极的背离衬底120的一侧的发光块以及第二电极层152形成第一发光元件SP1或第二发光元件SP2。
在一些实施例中，发光元件层组150还包括光取出层(Capping Layer)156。光取出层156位于第二电极层152的背离衬底120的一侧，光取出层156被配置为透光层，光取出层156覆盖次显示区AA1。在一些实施例中，发光元件层组150也可以不包括光取出层156。
在本申请第五实施例中，缓冲层130覆盖次显示区AA1。缓冲层130包括叠设的第一子缓冲层131和第二子缓冲层132，第二子缓冲层132位于第一子缓冲层131的背离衬底120的一侧。至少一层光调制层110包括以下中的至少任一：第八光调制层118、第九光调制层119，其中第八光调制层118夹设于衬底120与第一子缓冲层131之间；第九光调制层119夹设于第一子缓冲层131与第二子缓冲层132之间。例如本实施例中，至少一层光调制层110同时包括第八光调制层118、第九光调制层119。第八光调制层118能够提高预设波长光线在衬底120与第一子缓冲层131之间的透过率，第九光调制层119能够提高预设波长光线在第一子缓冲层131与第二子缓冲层132之间的透过率，从而一方面提高次显示区AA1的整体透光率，另一方面能够将原本透光率较低的预设波长的光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高各波段光线透过的均一性，提高透过光线的色彩保真性。
第一子缓冲层131可以为氮化硅层，第二子缓冲层132可以为氧化硅层。第八光调制层118为包括氧化硅、氮化硅、硅中至少两种的混合膜层。第九光调制层119为包括氧化硅、氮化硅、硅中至少两种的混合膜层。通过分别调节第八光调制层118、第九光调制层119的组成配比和厚度，能使第八光调制层118、第九光调制层119分别具有显著的增透作用。
在一个示例中，第八光调制层118、第九光调制层119均为氮氧化硅层，即第八光调制层118、第九光调制层119均为氧化硅与氮化硅共同成膜的混合膜层。在其它一些实施例中，第八光调制层118、第九光调制层119分别可以是其它混合膜层，例如是氧化硅和硅的混合膜层、可掺杂型 石英膜层等。第八光调制层118、第九光调制层119分别可以通过化学气相沉积(Chemical Vapor Deposition，CVD)、磁控溅射、涂布等方式镀膜形成，也可以通过在来料的衬底120上集成得到。
在一些实施例中，光调制层110的折射率介于夹设光调制层110的相邻透光层的折射率之间，以保证光调制层110能提高夹设光调制层110的相邻透光层之间的透光率。例如，在上述第五实施例中，第八光调制层118的折射率介于衬底120的折射率与第一子缓冲层131的折射率之间，第九光调制层119的折射率介于第一子缓冲层131与第二子缓冲层132之间。
在一些实施例中，光调制层110的折射率满足以下式子：
Figure PCTCN2021070157-appb-000004
其中，n A为夹设光调制层110的相邻透光层中的一者的折射率；n B为夹设光调制层110的相邻透光层中的另一者的折射率；n C为光调制层110的折射率；α为有效率，有效率α大于等于60％。其中，有效率α的值越高，光调制层110的折射率n C越接近相邻透光层的折射率(n A、n B)的几何平均数
Figure PCTCN2021070157-appb-000005
有效率α大于等于60％，可以保证光调制层110能够将预设波长光线在相邻透光层之间的透过率增强。
在一些实施例中，光调制层110的折射率满足以下式子：
Figure PCTCN2021070157-appb-000006
其中，n A为夹设光调制层110的相邻透光层中的一者的折射率；n B为夹设光调制层110的相邻透光层中的另一者的折射率；n C为光调制层110的折射率。式(5)相当于将式(4)中的有效率α配置为100％得到，当光调制层110的折射率n C满足式(5)时，得到光调制层110的折射率n C的较优值，此时光调制层110能够大幅提升预设波长光线在相邻透光层之间的透过率。上述式(4)中的有效率α可以理解为光调制层110的调制性能能够达到较优调制性能(折射率n C的较优值对应的调制性能)的有效程度。
以第九光调制层119的折射率的配置方式为例说明，其中将第一子缓冲层131的折射率代入式(4)中的n A、将第二子缓冲层132的折射率代入式(4)中的n B，有效率例如是100％，此时得到第九光调制层119的折射率n C的较优值；有效率例如是96％，此时得到有效率是96％时第九光调制 层119的折射率n C。
在一些实施例中，每层光调制层110包括位于次显示区AA1的第一部分，该第一部分的厚度满足以下式子：
T C×n C＝(2M+1)×λ/4          (6)
其中，T C为光调制层110的第一部分的厚度；n C为光调制层110的折射率；λ为预设波长光线的波长；M为任意自然数。其中，预设波长光线的波长λ即所需调节波长光线的波长，其量纲与光调制层110的第一部分的厚度T C的量纲一致，量纲例如是纳米。
在一些实施例中，每层光调制层110包括位于次显示区AA1的第一部分，并且至少一层光调制层110包括位于主显示区AA2的第二部分。如图8，例如在本实施例中，第九光调制层119包括第一部分119a和第二部分119b，其中第九光调制层119的第一部分119a位于次显示区AA1，第二部分119b位于主显示区AA2。
以第九光调制层119的第一部分119a的厚度的配置方式为例说明，其中将第九光调制层119的折射率代入式(6)中n C、将预设波长光线的波长代入式(6)中的λ、将任意自然数代入式(6)中的M，得到光调制层110的第一部分119a的厚度T C。在一个示例中，预设波长光线的波长λ例如是500纳米，此时得到的光调制层110的第一部分119a的厚度T C，能使第九光调制层119的第一部分119a提高波长为500纳米的光线在第一子缓冲层131与第二子缓冲层132之间的透过率。根据光谱自身属性，波长邻近500纳米的一些范围内的光线(例如波长490纳米的光线)在第一子缓冲层131与第二子缓冲层132之间的透过率也会有一定程度的提升。并且，根据光谱自身属性，波长为500纳米整数倍的光线(例如波长1000纳米的光线)在第一子缓冲层131与第二子缓冲层132之间的透过率也会提升。
根据本申请实施例的显示面板100，通过设置光调制层110，一方面由于其具有增透效果，能够提高次显示区AA1的整体透光率；另一方面，光调制层110能将原本透光率较低的一些波长光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高光谱透过的均一性，提高透过光线的色彩保真性。
如前所述，至少一层光调制层110既包括位于次显示区AA1的第一部分，也包括位于主显示区AA2的第二部分。在次显示区AA1与光调制层110第一部分的两个表面紧邻的膜层，与在主显示区AA2与光调制层110第二部分的两个表面紧邻的膜层可能是相同的，也可能至少一层不同。光调制层110的第二部分的厚度与第一部分的厚度可以相同，也可以不同，根据光调制层110在次显示区AA1和主显示区AA2的调制效果需求进行配置。当第一部分的两个表面紧邻的膜层和第二部分的两个表面紧邻的膜层相同，且第二部分的厚度与第一部分的厚度相同时，第二部分与第一部分的调制效果相同。当第一部分的两个表面紧邻的膜层与第二部分的两个表面紧邻的膜层至少一层不同，和/或第二部分的厚度与第一部分的厚度不同时，第二部分与第一部分的调制效果不同。
在上述实施例中，以光调制层110设置于缓冲层130处为例进行了说明，从而能够对缓冲层130处进行光线增透并降低缓冲层130处对透过光线色度保真性的干扰。光调制层110还可以设置于显示面板100的其它膜层处，用于改善其它膜层处对透过光线色度保真性的干扰。
图10是根据本申请第六实施例提供的显示面板的截面示意图，其中图11绘示了显示面板100部分区域的截面。第七实施例提供的显示面板100的大部分结构与第五实施例提供的显示面板100相同，以下将对第六实施例与第五实施例的不同之处进行说明，相同之处不再详述。
在第六实施例中，层间介质层144以及平坦化层145覆盖次显示区AA1，并在次显示区AA1层叠设置。层间介质层144包括叠设的第一子层间介质层1441和第二子层间介质层1442。第二层间介质层144位于第一层间介质层144的背离衬底120的一侧，至少一层光调制层110包括以下中的至少任一：第十光调制层1110、第十一光调制层1111。第十光调制层1110夹设于第一子层间介质层1441与第二子层间介质层1442之间。第十一光调制层1111，夹设于第二子层间介质层1442与平坦化层145之间。
例如本实施例中，至少一层光调制层110同时包括第十光调制层1110、第十一光调制层1111。第十光调制层1110能够提高预设波长光线在第一子层间介质层1441与第二子层间介质层1442之间的透过率。第十一光调 制层1111能够提高预设波长光线在第一子层间介质层1441与第二子层间介质层1442之间的透过率，从而一方面提高次显示区AA1的整体透光率，另一方面能够将原本透光率较低的预设波长的光线的透过率提升至与透光率较高的波长光线的透光率接近甚至相等，提高各波段光线透过的均一性，提高透过光线的色彩保真性。
第一子层间介质层1441可以为氧化硅层，第二子层间介质层1442可以为氮化硅层。第十光调制层1110为包括氧化硅、氮化硅、硅中至少两种的混合膜层；第十一光调制层1111为包括氧化硅、氮化硅、硅中至少两种的混合膜层。通过分别调节第十光调制层1110、第十一光调制层1111的组成配比和厚度，能使第十光调制层1110、第十一光调制层1111分别具有显著的增透作用。
在一个示例中，第十光调制层1110、第十一光调制层1111均为氮氧化硅层，即第十光调制层1110、第十一光调制层1111均为氧化硅与氮化硅共通成膜的混合膜层。在其它一些实施例中，第十光调制层1110、第十一光调制层1111分别可以是其它混合膜层，例如是氧化硅和硅的混合膜层、可掺杂型石英膜层等。第十光调制层1110、第十一光调制层1111分别可以通过化学气相沉积(Chemical Vapor Deposition，CVD)、磁控溅射、涂布等方式镀膜形成。
图11是根据本申请第七实施例提供的显示面板的截面示意图，其中图11绘示了显示面板100部分区域的截面。第七实施例提供的显示面板100的大部分结构与第五实施例提供的显示面板100相同，以下将对第七实施例与第五实施例的不同之处进行说明，相同之处不再详述。
与第五实施例不同的是，在第七实施例中，发光元件层组150与封装层160之间间隔设置，至少一层光调制层110包括填充于封装层160与发光元件层组150之间的第十二光调制层1112。
在本实施例中，发光元件层组150包括第一电极层151、第二电极层152、发光层153、像素定义层155以及光取出层156。在一些实施例中，发光元件层组150也可以不包括光取出层156。
第十二光调制层1112例如是氟化锂层。在本实施例中，第十二光调制 层1112能够提高预设波长光线在封装层160与发光元件层组150(光取出层156)之间的透过率，从而一方面提高次显示区AA1的整体透光率，另一方面能够提高各波段光线透过的均一性，提高透过光线的色彩保真性。
本实施例中，显示面板100可以是柔性显示面板100，相应地，封装层160为薄膜封装结构，在一些实施例中，封装层160包括叠层设置的至少一层无机封装层和至少一层有机封装层。
在上述实施例中，以显示面板100是柔性显示面板100为例进行说明，然而本申请构思可以不限于应用于柔性显示面板100，也可应用于硬性显示面板100。例如在上述第七实施例中，显示面板100可以是硬性显示面板100，其中封装层160可以是玻璃等材质的封装盖板，发光元件层组150与封装层160之间间隔设置，至少一层光调制层110包括填充于封装层160与发光元件层组150之间的第十二光调制层1112。第十二光调制层1112可以通过喷墨打印、涂布等方式形成。
图12是根据本申请第八实施例提供的显示面板100的截面示意图，其中图12绘示了显示面板100部分区域的截面。第八实施例提供的显示面板100的大部分结构与第五实施例提供的显示面板100相同，以下将对第八实施例与第五实施例的不同之处进行说明，相同之处不再详述。
与第五实施例不同的是，在第八实施例中，显示面板100为硬性显示面板100，封装层160是玻璃等材质的封装盖板。
此外，显示面板100还包括真空层170，真空层170位于发光元件层组150与封装层160之间。
至少一层光调制层110包括以下中的至少任一：第十三光调制层1113、第十四光调制层1114，其中第十三光调制层1113位于发光元件层组150与真空层170之间；第十四光调制层1114位于封装层160与真空层170之间。例如本实施例中，至少一层光调制层110同时包括第十三光调制层1113和第十四光调制层1114。
在一些实施例中，第十三光调制层1113为氟化锂层，可以通过蒸镀、电子束蒸发等方式成膜。在一些实施例中，第十四光调制层1114为氟化镁层，可以通过磁控溅射、电子束蒸发等方式成膜。在一些实施例中，第十 三光调制层1113和/或第十四光调制层1114可以通过在来料的封装层160上集成得到。
在其它一些实施例中，第十三光调制层1113可以是其它折射率低于发光元件层组150中最靠近真空层170的一层膜层(光取出层156)的折射率的材料层；第十四光调制层1114可以是其它折射率低于封装层160的折射率的材料层。
第十三光调制层1113能够提高预设波长光线在发光元件层组150与真空层170之间的透过率，第十四光调制层1114能够提高预设波长光线在封装层160与真空层170之间的透过率。通过设置第十三光调制层1113和/或第十四光调制层1114，提高次显示区AA1的整体透光率，并且降低封装层160处对透过光线色度保真性的干扰。
在上述实施例中，分别说明了在缓冲层130处、封装层160处分别可以设置调制层110。并且，上述实施例在技术方案不冲突的情况下可以相互组合。例如在一个实施例中，显示面板100的至少一层光调制层110包括第八光调制层118、第九光调制层119、第十三光调制层1113以及第十四光调制层1114。第八光调制层118夹设于衬底120与第一子缓冲层131之间，第九光调制层119夹设于第一子缓冲层131与第二子缓冲层132之间，第十三光调制层1113位于发光元件层组150与真空层170之间，第十四光调制层1114位于封装层160与真空层170之间。
图13是根据本申请第九实施例提供的显示面板100的截面示意图。其中图13绘示了显示面板100部分区域的截面。第九实施例提供的显示面板100的大部分结构与第五实施例提供的显示面板100相同，以下将对第九实施例与第五实施例的不同之处进行说明，相同之处不再详述。
在本实施例中，器件层组140包括缓冲层130、栅绝缘层142、电容介质层143以及平坦化层145。缓冲层130位于衬底120上。栅绝缘层142位于缓冲层130背离衬底120的一侧。电容介质层143位于栅绝缘层142背离衬底120的一侧。层间介质层144位于电容介质层143背离衬底120的一侧。平坦化层145位于层间介质层144背离衬底120的一侧。缓冲层130、栅绝缘层142、电容介质层143、层间介质层144以及平坦化层145被配置 为透光层。缓冲层130、栅绝缘层142、电容介质层143、或层间介质层144中的至少一者覆盖次显示区AA1。例如本实施例中，缓冲层130、栅绝缘层142、电容介质层143、层间介质层144均同时延伸于次显示区AA1和主显示区AA2。
器件层组140还包括图案化的半导体结构146，图案化的半导体结构146位于缓冲层130与栅绝缘层142之间。其中，半导体结构146设置于主显示区AA2并避位次显示区AA1设置。如前所述，显示面板100可以包括第一像素电路PC1和第二像素电路PC2，第一像素电路PC1、第二像素电路PC2分别包括薄膜晶体管以及电容。其中，图案化的半导体结构146的至少部分能够用于形成薄膜晶体管的有源层。
在一些实施例中，至少一层光调制层110包括第十五光调制层1115。第十五光调制层1115包括位于次显示区AA1的第一部分1115a以及位于主显示区AA2的第二部分1115b。第十五光调制层1115的第二部分1115b位于半导体结构146的背离衬底120的一侧。本实施例中，在次显示区AA1，第十五光调制层1115的第一部分1115a夹设于栅绝缘层142与电容介质层143之间。
在本实施例中，在次显示区AA1，第十五光调制层1115的第一部分1115a被配置为能够提高预设波长光线在夹设第一部分1115a的相邻透光层之间的透过率，在主显示区AA2，第十五光调制层1115的第二部分1115b被配置为能够降低光线在夹设第二部分1115b的相邻膜层之间的透过率。因此，在次显示区AA1，第十五光调制层1115的第一部分1115a能提高次显示区AA1的整体透光率，且能够提高各波段光线透过的均一性，提高透过光线的色彩保真性。在主显示区AA2，由于半导体结构146存在对光的光电效应，通过第十五光调制层1115的第二部分1115b对透光率降低，能够降低发光元件层组150以及外界的光线向半导体结构146传播，从而降低光线对有源层153沟道的影响，提高薄膜晶体管的稳定性。
对第十五光调制层1115的第一部分1115a、第二部分1115b分别进行不同的配置，可以使得两者具有不同的透光性能。在一些实施例中，可以对第十五光调制层1115的第一部分1115a、第二部分1115b分别配置不同 的折射率。在一些实施例中，第十五光调制层1115的第二部分1115b的厚度与第十五光调制层1115的第一部分1115a的厚度不同，使得第一部分1115a被配置为能够提高预设波长光线在夹设第一部分1115a的相邻透光层之间的透过率，第二部分1115b被配置为能够降低光线在夹设第二部分1115b的相邻膜层之间的透过率。
在一些实施例中，当至少一层光调制层110包括位于半导体结构146的朝向衬底120一侧的第十六光调制层时，第十六光调制层也以可以包括位于次显示区AA1的第一部分以及位于主显示区AA2的第二部分。其中第十六光调制层的第一部分和第二部分均被配置为能够提高预设波长光线在夹设第七调制层的相邻膜层之间的透过率，使得发光元件层组150以及外界的光线穿过半导体结构146后，再次反射回半导体结构146的光线减少，提高薄膜晶体管的稳定性。
依照本申请如上文所述的实施例，这些实施例并没有详尽叙述所有的细节，也不限制该申请仅为所述的具体实施例。显然，根据以上描述，可作很多的修改和变化。本说明书选取并具体描述这些实施例，是为了更好地解释本申请的原理和实际应用，从而使所属技术领域技术人员能很好地利用本申请以及在本申请基础上的修改使用。本申请仅受权利要求书及其全部范围和等效物的限制。

Claims (22)

  1. 一种显示面板，包括主显示区和透光区，所述主显示区围绕所述透光区的至少部分外周设置，所述显示面板包括层叠设置的多个膜层，所述多个膜层中的部分所述膜层被配置为透光层，至少部分层所述透光层覆盖所述透光区，所述显示面板包括：
    至少一层光调制层，每层所述光调制层夹设于覆盖所述透光区的任意相邻所述透光层之间，所述光调制层被配置为至少一部分能够提高预设波长光线在夹设所述光调制层的相邻所述透光层之间的透过率。
  2. 根据权利要求1所述的显示面板，其中，所述光调制层的折射率介于夹设所述光调制层的相邻所述透光层的折射率之间。
  3. 根据权利要求2所述的显示面板，其中，所述光调制层的折射率满足以下式子：
    Figure PCTCN2021070157-appb-100001
    其中，n A为夹设所述光调制层的相邻所述透光层中的一者的折射率；
    n B为夹设所述光调制层的相邻所述透光层中的另一者的折射率；
    n C为所述光调制层的折射率；
    α为有效率，所述有效率大于等于60％。
  4. 根据权利要求3所述的显示面板，其中，所述光调制层的折射率满足以下式子：
    Figure PCTCN2021070157-appb-100002
    其中，n A为夹设所述光调制层的相邻所述透光层中的一者的折射率；
    n B为夹设所述光调制层的相邻所述透光层中的另一者的折射率；
    n C为所述光调制层的折射率。
  5. 根据权利要求1所述的显示面板，其中，每层所述光调制层包括位于所述透光区的第一部分，所述第一部分的厚度满足以下式子：
    T C×n C＝(2M+1)×λ/4；
    其中，T C为所述光调制层的所述第一部分的厚度；
    n C为所述光调制层的折射率；
    λ为所述预设波长光线的波长；
    M为任意自然数。
  6. 根据权利要求5所述的显示面板，其中，至少一层所述光调制层包括位于所述主显示区的第二部分，所述光调制层的所述第二部分的厚度与所述第一部分的厚度不同。
  7. 根据权利要求1所述的显示面板，其中，所述透光区为非显示区域，所述多个膜层中的部分所述膜层被配置为所述透光层，另一部分所述膜层被配置为非透光层，其中所述非透光层延伸于所述主显示区且避位所述透光区设置。
  8. 根据权利要求7所述的显示面板，所述显示面板还包括：
    衬底，被配置为所述透光层；
    缓冲层，位于所述衬底上，所述缓冲层被配置为所述透光层；
    器件层组，位于所述缓冲层背离所述衬底的一侧；
    发光元件层组，位于所述器件层组背离所述衬底的一侧；以及
    封装层，位于所述发光元件层组背离所述衬底的一侧，所述封装层被配置为所述透光层，
    其中，所述衬底、所述缓冲层以及所述封装层覆盖所述透光区。
  9. 根据权利要求8所述的显示面板，其中，所述至少一层光调制层包括夹设于所述衬底与所述缓冲层之间的第一光调制层。
  10. 根据权利要求9所述的显示面板，其中，所述缓冲层包括叠设的第一子缓冲层和第二子缓冲层，所述至少一层光调制层包括夹设于所述第一子缓冲层与所述第二子缓冲层之间的第二光调制层；
    所述第一子缓冲层为氮化硅层，所述第二子缓冲层为氧化硅层，所述第一光调制层为包括氧化硅、氮化硅、硅中至少两种的混合膜层；所述第二光调制层为包括氧化硅、氮化硅、硅中至少两种的混合膜层。
  11. 根据权利要求8所述的显示面板，其中，所述发光元件层组与所述封装层之间间隔设置，所述至少一层光调制层包括填充于所述封装层与所述发光元件层组之间的第三光调制层。
  12. 根据权利要求8所述的显示面板，所述显示面板还包括：
    真空层，位于所述发光元件层组与所述封装层之间，
    所述至少一层光调制层包括以下中的至少任一：
    第四光调制层，位于所述发光元件层组与所述真空层之间；
    第五光调制层，位于所述封装层与所述真空层之间；
    所述第四光调制层为氟化锂层；所述第五光调制层为氟化镁层。
  13. 根据权利要求8所述的显示面板，其中，所述发光元件层组包括：
    第一电极层；
    第二电极层，位于所述第一电极层的背离所述衬底的一侧；
    发光层，位于所述第一电极层与所述第二电极层之间，其中，所述第一电极层、所述第二电极层以及所述发光层延伸于所述主显示区且避位所述透光区设置；
    载流子层，位于所述第一电极层与所述发光层之间，和/或位于所述发光层与所述第二电极层之间，所述载流子层覆盖所述透光区，或者所述载流子层延伸于所述主显示区且避位所述透光区设置；
    光取出层，位于所述第二电极层的背离所述衬底的一侧，所述光取出层被配置为所述透光层，所述光取出层覆盖所述透光区。
  14. 根据权利要求8所述的显示面板，其中，所述器件层组包括薄膜晶体管，所述薄膜晶体管包括有源层，所述至少一层光调制层包括第六光调制层，所述第六光调制层包括位于所述透光区的第一部分以及位于所述主显示区的第二部分，所述第六光调制层的所述第二部分位于所述有源层的背离所述衬底的一侧，
    其中，在所述透光区，所述第一部分被配置为能够提高所述预设波长光线在夹设所述第一部分的相邻所述透光层之间的透过率，在所述主显示区，所述第二部分被配置为能够降低光线在夹设所述第二部分的相邻所述膜层之间的透过率。
  15. 根据权利要求8所述的显示面板，其中，所述透光区为次显示区，所述次显示区的透光率大于所述主显示区的透光率，
    至少部分层所述透光层覆盖所述次显示区，每层所述光调制层夹设于覆盖所述次显示区的任意相邻所述透光层之间。
  16. 根据权利要求15所述的显示面板，所述显示面板还包括：
    衬底，被配置为所述透光层；
    器件层组，位于所述衬底上，所述器件层组包括多个器件子层，所述多个器件子层中的至少部分层被配置为所述透光层；
    发光元件层组，位于所述器件层组背离所述衬底的一侧；以及
    封装层，位于所述发光元件层组背离所述衬底的一侧，所述封装层被配置为所述透光层，
    其中，所述器件层组中至少部分层所述透光层、所述衬底、所述发光元件层组以及所述封装层覆盖所述次显示区；
    其中，所述器件层组包括：
    缓冲层，位于所述衬底上；
    栅绝缘层，位于所述缓冲层背离所述衬底的一侧；
    电容介质层，位于所述栅绝缘层背离所述衬底的一侧；
    层间介质层，位于所述电容介质层背离所述衬底的一侧；
    平坦化层，位于所述层间介质层背离所述衬底的一侧，
    其中，所述缓冲层、所述栅绝缘层、所述电容介质层、所述层间介质层以及所述平坦化层被配置为所述透光层，所述缓冲层、所述栅绝缘层、所述电容介质层、或所述层间介质层中的至少一者覆盖所述次显示区。
  17. 根据权利要求16所述的显示面板，所述显示面板还包括：
    第一发光元件和第二发光元件，位于所述发光元件层组，所述第一发光元件设置于所述次显示区，所述第二发光元件设置于所述主显示区；
    第一像素电路和第二像素电路，位于所述器件层组，所述第一像素电路与所述第一发光元件电连接，用于驱动所述第一发光元件显示，所述第二像素电路与所述第二发光元件电连接，用于驱动所述第二发光元件显示，其中，所述第一像素电路、所述第二像素电路均设置于所述主显示区；
    所述器件层组还包括：
    图案化的半导体结构，位于所述缓冲层与所述栅绝缘层之间；
    图案化的金属结构，位于所述栅绝缘层与所述电容介质层之间、和/或位于所述电容介质层与所述层间介质层之间、和/或位于所述层间介质层与 所述平坦化层之间，其中，所述半导体结构、所述金属结构设置于所述主显示区并避位所述次显示区设置；
    透光导线，将所述第一像素电路与所述第一发光元件电连接，其中，所述透光导线的至少部分位于所述次显示区。
  18. 根据权利要求16所述的显示面板，其中，所述缓冲层覆盖所述次显示区，所述缓冲层包括叠设的第一子缓冲层和第二子缓冲层，所述第二子缓冲层位于所述第一子缓冲层的背离所述衬底的一侧，所述至少一层光调制层包括以下中的至少任一：
    第八光调制层，夹设于所述衬底与所述第一子缓冲层之间；
    第九光调制层，夹设于所述第一子缓冲层与所述第二子缓冲层之间；
    所述第一子缓冲层为氮化硅层，所述第二子缓冲层为氧化硅层，所述第八光调制层为包括氧化硅、氮化硅、硅中至少两种的混合膜层；所述第九光调制层为包括氧化硅、氮化硅、硅中至少两种的混合膜层。
  19. 根据权利要求16所述的显示面板，其中，所述层间介质层以及所述平坦化层覆盖所述次显示区，并在所述次显示区层叠设置，所述层间介质层包括叠设的第一子层间介质层和第二子层间介质层，所述第二层间介质层位于所述第一层间介质层的背离所述衬底的一侧，所述至少一层光调制层包括以下中的至少任一：
    第十光调制层，夹设于所述第一子层间介质层与所述第二子层间介质层之间；
    第十一光调制层，夹设于所述第二子层间介质层与所述平坦化层之间；
    所述第一子层间介质层为氧化硅层，所述第二子层间介质层为氮化硅层，所述第十光调制层为包括氧化硅、氮化硅、硅中至少两种的混合膜层；所述第十一光调制层为包括氧化硅、氮化硅、硅中至少两种的混合膜层。
  20. 根据权利要求16所述的显示面板，其中，所述发光元件层组与所述封装层之间间隔设置，所述至少一层光调制层包括填充于所述封装层与所述发光元件层组之间的第十二光调制层。
  21. 根据权利要求16所述的显示面板，所述显示面板还包括：
    真空层，位于所述发光元件层组与所述封装层之间，
    所述至少一层光调制层包括以下中的至少任一：
    第十三光调制层，位于所述发光元件层组与所述真空层之间；
    第十四光调制层，位于所述封装层与所述真空层之间；
    所述第十三光调制层为氟化锂层；所述第十四光调制层为氟化镁层。
  22. 根据权利要求17所述的显示面板，其中，所述至少一层光调制层包括第十五光调制层，所述第十五光调制层包括位于所述次显示区的第一部分以及位于所述主显示区的第二部分，所述第十五光调制层的所述第二部分位于所述半导体结构的背离所述衬底的一侧，
    其中，在所述次显示区，所述第一部分被配置为能够提高所述预设波长光线在夹设所述第一部分的相邻所述透光层之间的透过率，在所述主显示区，所述第二部分被配置为能够降低光线在夹设所述第二部分的相邻所述膜层之间的透过率。
PCT/CN2021/070157 2020-03-20 2021-01-04 显示面板 Ceased WO2021184930A1 (zh)

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