WO2021180045A1 - 检测半导体制作工艺缺陷的方法 - Google Patents

检测半导体制作工艺缺陷的方法 Download PDF

Info

Publication number
WO2021180045A1
WO2021180045A1 PCT/CN2021/079600 CN2021079600W WO2021180045A1 WO 2021180045 A1 WO2021180045 A1 WO 2021180045A1 CN 2021079600 W CN2021079600 W CN 2021079600W WO 2021180045 A1 WO2021180045 A1 WO 2021180045A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
manufacturing process
semiconductor manufacturing
phosphor
process according
Prior art date
Application number
PCT/CN2021/079600
Other languages
English (en)
French (fr)
Inventor
蓝元谷
Original Assignee
长鑫存储技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 长鑫存储技术有限公司 filed Critical 长鑫存储技术有限公司
Priority to US17/386,487 priority Critical patent/US11988970B2/en
Publication of WO2021180045A1 publication Critical patent/WO2021180045A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N21/643—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" non-biological material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/91—Investigating the presence of flaws or contamination using penetration of dyes, e.g. fluorescent ink
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6456—Spatial resolved fluorescence measurements; Imaging
    • G01N2021/646—Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the embodiments of the present disclosure relate to the field of semiconductor manufacturing, and in particular, to a method for detecting defects in a semiconductor manufacturing process.
  • the manufacturing process of a semiconductor device often includes multiple steps. A small error in any process step may cause the failure of the semiconductor device. Therefore, during the manufacturing process, it is necessary to ensure that each process step meets the process requirements.
  • the main process steps of semiconductor devices include photolithography, etching, ion implantation, etc., among which photolithography includes the steps of coating photoresist, exposing, and developing.
  • photolithography includes the steps of coating photoresist, exposing, and developing.
  • one side surface of the substrate 110' is coated with a whole layer of photoresist 120', and the photoresist 120' can be patterned by exposure and development, that is, the photolithography of the reserved area R'
  • the glue 120' is retained, while the photoresist 120' in the etched area E'is removed.
  • the present disclosure provides a method for detecting defects in a semiconductor manufacturing process, so as to reduce the difficulty of defect detection on the developed photoresist and improve the accuracy of defect detection.
  • embodiments of the present disclosure provide a method for detecting defects in a semiconductor manufacturing process, including:
  • the fluorescent agent is used to detect defects of the photoresist after development.
  • the type of the fluorescent agent is any one of stilbene type, coumarin type, pyrazoline type, benzoxazole type, and dicarboximide type, or any combination thereof.
  • the concentration of the phosphor in the photoresist is greater than 0% and less than 1%.
  • the pH value of the phosphor-formed photoresist is greater than 0 and less than 6.
  • the wavelength range of the fluorescence emitted by the fluorescer is 420nm-450nm.
  • the step of forming a fluorescent agent in the photoresist includes:
  • the phosphor is injected into the photoresist by ion implantation.
  • the step of injecting the phosphor into the photoresist by means of ion implantation further includes:
  • the phosphor is injected into the developed photoresist.
  • the step of injecting the phosphor into the photoresist by means of ion implantation further includes:
  • the phosphor is injected into the photoresist by ion implantation.
  • the baking temperature ranges from 50° C. to 500° C.; the baking time ranges from 50 s to 500 s.
  • it further includes:
  • the phosphor injection is performed before exposure of the photoresist or after development.
  • it further includes:
  • the phosphor injection is performed before the hinge reaction of the photoresist occurs.
  • the injection energy of the phosphor is less than 10 KeV.
  • the defects include any one or a combination of photoresist residual defects and photoresist deterioration defects.
  • a fluorescent agent is formed in the photoresist, wherein the fluorescent agent in the photoresist can absorb the light emitted by the detection light source and convert it into fluorescent emission, which is easy to be optically emitted.
  • the detector captures that, therefore, the method of injecting a fluorescent agent into the photoresist can increase the emitted light intensity when the photoresist has defects, thereby reducing the difficulty of detecting photoresist defects and improving the sensitivity of photoresist defect detection.
  • FIG. 1 is a schematic diagram of the structure of the photoresist residue after development provided by the related art.
  • FIG. 2 is a flowchart of a method for detecting defects in a semiconductor manufacturing process provided by an embodiment of the present disclosure
  • FIG. 3 is a flowchart of another method for detecting defects in a semiconductor manufacturing process provided by an embodiment of the present disclosure
  • FIG. 4 is a flowchart of another method for detecting defects in a semiconductor manufacturing process provided by an embodiment of the present disclosure.
  • FIG. 2 is a flowchart of a method for detecting defects in a semiconductor manufacturing process provided by an embodiment of the present disclosure. Referring to Figure 2, the method includes:
  • the material of the substrate may include metals, semiconductors, organic materials, inorganic materials, or other materials known to those skilled in the art, and those skilled in the art can set it according to actual conditions, which is not limited here.
  • a functional film layer can be formed after the substrate is patterned by photolithography.
  • a complete semiconductor device is usually formed by stacking multiple functional film layers.
  • the substrate described in S110 can be used to form any one of semiconductor devices. Layers of functional film substrates.
  • the photoresist includes a positive photoresist or a negative photoresist.
  • the photoresist can be divided into negative photoresist and positive photoresist according to its chemical reaction mechanism and development principle. It is negative photoresist that forms insoluble matter after light; conversely, it is insoluble to some solvents, and what becomes soluble after light is positive photoresist.
  • photoresist can choose photoresist according to the actual situation, which is not limited here.
  • a spin coating method or other methods known to those skilled in the art may be used to form a photoresist with a predetermined thickness and a uniform film thickness on the substrate.
  • fluorescent agent also known as fluorescent whitening agent
  • the fluorescent agent molecules all have a planar conjugated system formed by ⁇ electrons.
  • the wavelength range of the fluorescence emitted by the fluorescer is 420nm-450nm.
  • the type of the fluorescent agent is any one of stilbene type, coumarin type, pyrazoline type, benzoxazole type, and dicarboximide type, or any combination thereof.
  • the defects include any one or a combination of photoresist residual defects and photoresist deterioration defects.
  • the developed photoresist if the developed photoresist has no defects, then after the photoresist is developed, the area where the photoresist should be removed (called the etched area) is exposed to the substrate, and the photoresist should be retained The area (called the reserved area) still has photoresist covering the substrate.
  • the photoresist deteriorates due to excessive storage time, improper storage conditions or other reasons, then the photoresist will not react or fully react under exposure, which will eventually lead to development failure; if the photoresist is not deteriorated However, due to insufficient light in the exposure process or insufficient development and other reasons, the development will eventually fail, such as residual photoresist in the etched area.
  • the defect detection process of the photoresist can be as follows: illuminate the etching area and the reserved area with a detection light source, and then use an optical detector to obtain the fluorescence light intensity of the etching area and the reserved area, and finally according to the fluorescence light intensity or The fluorescence intensity distribution determines whether there are defects in the developed photoresist.
  • the optical detector can determine whether there is photoresist remaining in the etched area according to the fluorescence intensity of the etched area.
  • the optical detector can determine whether there is photoresist remaining in the etched area according to the fluorescence intensity of the etched area.
  • the optical detector can determine whether the photoresist is missing in the reserved area according to the fluorescence intensity of the reserved area.
  • a fluorescent agent is formed in the photoresist, wherein the fluorescent agent in the photoresist can absorb the light emitted by the detection light source and convert it into fluorescent emission and is easily optically emitted.
  • the detector captures, therefore, the way that the phosphor is formed in the photoresist can increase the difference between the fluorescence intensity when the photoresist has defects and the fluorescence intensity when the photoresist does not have defects, thereby reducing photoresist defects It is difficult to detect and improve the accuracy of photoresist defect detection.
  • the phosphor is injected into the photoresist by ion implantation.
  • ion implantation is the ionization, acceleration, and mass analysis of the ion implanter to form a beam of high-energy ion streams composed of required impurity ions into the target, and complete the implantation through point-by-point scanning.
  • the fluorescent agent is a dopant
  • the target is a photoresist.
  • the phosphor is injected into the photoresist by ion implantation, so that the doping concentration and doping depth of the phosphor can be precisely controlled.
  • the concentration of the phosphor in the photoresist is greater than 0% and less than 1%.
  • the concentration of the fluorescent agent in the photoresist described herein is defined as (fluorescent agent mass/photoresist mass) ⁇ 100%.
  • the pH value of the photoresist formed with the phosphor is greater than 0 and less than 6.
  • the photoresist when the exposure light source irradiates the photoresist, the photoresist will produce an acid, which can dissociate the resin component in the photoresist and develop
  • the agent is alkaline, so the developer can dissolve the photoresist irradiated by the exposure light source.
  • the photoresist layer is acidic, it is beneficial to improve the light sensitivity of the photoresist, so that the light intensity required during the exposure process will not be too high.
  • FIG. 3 is a flowchart of another method for detecting defects in a semiconductor manufacturing process provided by an embodiment of the present disclosure. Referring to Figure 3, the method includes:
  • S220 Expose and develop the photoresist.
  • the exposure time and development time of the photoresist can be set by those skilled in the art according to actual conditions.
  • the photoresist is a positive photoresist
  • the photoresist that has been exposed to light is removed, and the photoresist that has not been exposed to light is retained, and the pattern on the mask can be changed Transfer to the photoresist
  • the photoresist is a negative photoresist
  • the photoresist that has been exposed to light is retained, and the photoresist that has not been exposed to light is removed, and the mask on the mask can be removed.
  • the pattern is transferred to the photoresist.
  • the phosphor injection into the photoresist after development can prevent the process of ion implanting the phosphor from damaging the photoresist, and ensure that the photoresist is normally exposed and developed, thereby improving the accurate transfer of the mask pattern to Probability of photoresist.
  • S240 Detect defects of the developed photoresist by using a fluorescent agent.
  • the method for detecting defects in the semiconductor manufacturing process can prevent the phosphor injection process from affecting the development and exposure effect of the photoresist by injecting the fluorescent agent into the developed photoresist, and increase the probability of successful mask pattern transfer And it can also reduce the area of the photoresist that needs to be injected with the fluorescent agent, thereby reducing the amount of the fluorescent agent and reducing the cost.
  • FIG. 4 is a flowchart of another method for detecting defects in a semiconductor manufacturing process provided by an embodiment of the present disclosure. Referring to Figure 4, the method includes:
  • the process of baking the photoresist to the glass transition temperature or higher may be after the glue is applied, or after the exposure, or after the development.
  • the phosphor injection is performed before the exposure of the photoresist or after the development. In this way, it is possible to prevent the phosphor injection process from affecting the exposure or development effect of the photoresist.
  • most photoresists are non-oriented polymers.
  • the temperature is higher than the glass transition temperature, a considerable number of chain pieces in the polymer appear in the form of molecular motion, and therefore exhibit viscous flow.
  • the temperature is lower than the glass transition temperature, the molecular motion of the chain segments stops, and the polymer appears as glass. Since the polymer flows easily when the temperature is higher than the glass transition temperature, heating the photoresist to its glass transition temperature for a period of time for annealing treatment can achieve a more stable energy state.
  • the photoresist is in a viscous flow state, it is beneficial to improve the injection effect of the fluorescent agent.
  • the specific performance is that the fluorescent agent is injected to a relatively deep depth under a relatively small injection energy, and the fluorescent agent is in the photolithography Uniform distribution in the glue.
  • the baking temperature ranges from 50° C. to 500° C.; the baking time ranges from 50 s to 500 s. In this way, it is possible to avoid damage to the photoresist caused by excessively high temperature, and to sufficiently change the photoresist from a glass state to a viscous flow state.
  • S330 Detect defects of the developed photoresist by using a fluorescent agent.
  • the method for detecting defects in the semiconductor manufacturing process is to bake the photoresist to a glass transition temperature or higher, and then use ion implantation to inject the fluorescent agent into the photoresist, so that the fluorescent agent is injected
  • the photoresist is in a viscous flow state, which is beneficial to improve the injection effect of the fluorescent agent.
  • the injection energy of the phosphor is less than 10 KeV. In this way, the problem of damage to the photoresist due to excessive injection energy can be avoided.
  • the phosphor injection is performed before the hinge reaction of the photoresist occurs.
  • the photoresist changes from a viscous flow state to a solid state. Therefore, injecting the phosphor before the photoresist undergoes a hinge reaction means that the photoresist is in viscous flow.
  • the fluorescent agent is injected in the state, the fluorescent agent and the photoresist can be fully mixed, and the injection effect of the fluorescent agent can be improved.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

一种检测半导体制作工艺缺陷的方法。该方法包括在基板上形成光刻胶；在光刻胶中形成荧光剂；利用荧光剂检测显影后的光刻胶的缺陷。

Description

检测半导体制作工艺缺陷的方法
本公开基于申请号为202010162151.2、申请日为2020年3月10日、发明名称为《一种检测半导体制作工艺缺陷的方法》的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本公开作为参考。
技术领域
本公开实施例涉及半导体制造领域，尤其涉及一种检测半导体制作工艺缺陷的方法。
背景技术
半导体器件的制作工艺往往包含多个步骤，任何工艺步骤的微小错误均有可能导致半导体器件的失效，因此，在制备过程中应当确保每个工艺步骤达到工艺要求。
半导体器件的主要工艺步骤包括光刻、刻蚀、离子注入等，其中，光刻包括涂布光刻胶、曝光、显影等步骤。在实际工艺过程中，由于工艺等原因可能会出现显影之后的光刻胶存在缺陷情况。示例性的，如图1所示，基板110’的一侧表面涂布有整层的光刻胶120’，通过曝光以及显影可图案化光刻胶120’，即保留区R’的光刻胶120’被保留，同时刻蚀区E’的光刻胶120’被去除。由于光照不足、光刻胶变质等原因，可能会出现刻蚀区E’存在光刻胶残留130’的现象。现有技术中，通常采用光学检测仪器获取刻蚀区E’反射光光强，并根据反射光光强判断刻蚀区E’是否残留有光刻胶残留130’。但是，当光刻胶残留130’体积较小时，可能无法检测到该光刻胶残留130’，如此，会导致后续步骤出现错误，进而最终导致半导体器件的失效。
发明内容
本公开提供一种检测半导体制作工艺缺陷的方法，以降低对显影后的光刻胶进行缺陷检测的难度，提高缺陷检测准确度。
第一方面，本公开实施例提供了一种检测半导体制作工艺缺陷的方法，包括：
在基板上形成光刻胶；
在所述光刻胶中形成荧光剂；
利用所述荧光剂检测显影后的所述光刻胶的缺陷。
在一些实施例中，所述荧光剂的结构包括-C＝C-C＝C-C＝C-或-N＝C-C＝N-C＝C-中的任一种或其组合。
在一些实施例中，所述荧光剂的类型为二苯乙烯型、香豆素型、吡唑啉型、苯并恶唑型和二甲酰亚胺型中的任一种或其任意组合。
在一些实施例中，所述荧光剂在所述光刻胶中的浓度大于0％且小于1％。
在一些实施例中，所述形成有荧光剂的光刻胶的PH值大于0且小于6。
在一些实施例中，所述荧光剂出射的荧光波长范围为420nm-450nm。
在一些实施例中，所述在所述光刻胶中形成荧光剂的步骤中，包括：
利用离子注入方式将所述荧光剂注入至所述光刻胶中。
在一些实施例中，所述利用离子注入方式将所述荧光剂注入至所述光刻胶中的步骤中，还包括：
对所述光刻胶进行曝光和显影；
对显影后的所述光刻胶进行所述荧光剂的注入。
在一些实施例中，所述利用离子注入方式将所述荧光剂注入至所述光刻胶中的步骤中，还包括：
烘烤所述光刻胶至玻璃转化温度或高于所述玻璃转化温度后利用离子注入方式将所述荧光剂注入至所述光刻胶中。
在一些实施例中，所述烘烤温度范围为50℃至500℃；所述烘烤时间范围为50s至500s。
在一些实施例中，还包括：
在所述光刻胶进行曝光之前或者显影之后进行所述荧光剂注入。
在一些实施例中，还包括：
在所述光刻胶发生铰链反应之前进行所述荧光剂注入。
在一些实施例中，所述荧光剂的注入能量小于10KeV。
在一些实施例中，所述缺陷包括光刻胶残留缺陷和光刻胶变质缺陷中的任一种或其组合。
本公开实施例提供的检测半导体制作工艺缺陷的方法，在光刻胶中形成荧光剂，其中光刻胶中的荧光剂能吸收检测光源发出的光并将其转化为荧光发射出来，容易被光学检测仪捕捉到，因此，光刻胶中注入荧光剂的方式可以增大光刻胶存在缺陷时的发射光强，进而可以降低光刻胶缺陷的检测难度，提高光刻胶缺陷检测的灵敏度。
附图说明
图1是相关技术提供的一种显影后的光刻胶残留的结构示意图。
图2是本公开实施例提供的一种检测半导体制作工艺缺陷的方法的流程图；
图3是本公开实施例提供的另一种检测半导体制作工艺缺陷的方法的流程图；
图4是本公开实施例提供的又一种检测半导体制作工艺缺陷的方法的流程图。
具体实施方式
下面结合附图和实施例对本公开作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释本公开，而非对本公开的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本公开相关的部分而非全部结构。
有鉴于背景技术中提到问题，本公开实施例提供了一种检测半导体制作工艺缺陷的方法。图2是本公开实施例提供的一种检测半导体制作工艺缺陷的方法的流程图。参见图2，该方法包括：
S110、在基板上形成光刻胶。
在一些实施例中，基板的材料可以包括金属、半导体、有机材料、 无机材料或者本领域技术人员可知的其它材料，本领域技术人员可根据实际情况设置即可，此处不作限定。此外，将基板通过光刻的方式图案化之后可形成功能膜层，一个完整的半导体器件通常由多个功能膜层堆叠形成，S110中所述的基板可以是用于形成半导体器件中的任意一层功能膜层的基板。
在一些实施例中，光刻胶包括正性光刻胶或负性光刻胶。在一些实施例中，光刻胶根据其化学反应机理和显影原理，可分负性光刻胶和正性光刻胶两类。光照后形成不可溶物质的是负性光刻胶；反之，对某些溶剂是不可溶的，经光照后变成可溶物质的即为正性光刻胶。本领域技术人员可根据实际情况选用光刻胶，此处不作限定。
在一些实施例中，可采用旋涂法或者本领域技术人员可知的其它方法在基板上形成预设厚度，膜厚均匀的光刻胶。
S120、在光刻胶中形成荧光剂。
其中，荧光剂，又名荧光增白剂，是一种复杂的有机化合物。荧光剂分子都具有π电子形成的平面共轭体系，在一些实施例中，荧光剂的结构包括-C＝C-C＝C-C＝C-或-N＝C-C＝N-C＝C-中的任一种或其组合。具有上述两类结构的化合物吸收紫外线后，电子从基态激发到活泼态，在极短时间内又回到基态，可放出荧光。在一些实施例中，荧光剂出射的荧光波长范围为420nm-450nm。在一些实施例中，荧光剂的类型为二苯乙烯型、香豆素型、吡唑啉型、苯并恶唑型和二甲酰亚胺型中的任一种或其任意组合。
S130、利用荧光剂检测显影后的光刻胶的缺陷。
在一些实施例中，缺陷包括光刻胶残留缺陷和光刻胶变质缺陷中的任一种或其组合。
在一些实施例中，若显影后的光刻胶不存在缺陷，那么光刻胶显影之后，光刻胶应当被去除的区域(称之为刻蚀区)裸露出基板，光刻胶应当被保留的区域(称之为保留区)仍存在光刻胶覆盖基板。然而，若光刻胶由于放置时间过长、存放条件不当或者其它原因导致变质，那么光刻胶在曝光情况下将不发生反应或者不能充分反应，最终将导致显影失败；若光刻胶未变质，但是由于曝光过程光照不足或者显影不充分等 其它原因，最终也将导致显影失败，例如刻蚀区残留光刻胶。
可见，无论显影后的光刻胶存在光刻胶残留缺陷还是光刻胶变质缺陷，掩模板的图案与光刻胶上实际形成的图案都将存在差异，那么，后续将光刻胶的图案转移至基板上后，基板上的图案与掩模板的图案将存在差异，最终可能导致该半导体器件失效，因此，光刻胶缺陷检测尤为必要。
在一些实施例中，光刻胶的缺陷检测过程可以为，采用检测光源照射刻蚀区和保留区，然后采用光学检测仪获取刻蚀区和保留区的荧光光强，最后根据荧光光强或荧光光强分布确定显影后的光刻胶是否存在缺陷。
示例性的，如果刻蚀区残留有光刻胶，那么当检测光源的光照射在刻蚀区时，光刻胶会出射荧光；如果刻蚀区未残留有光刻胶，那么当检测光源的光照射在刻蚀区时，光刻胶不会出射荧光。因此，光学检测仪可根据刻蚀区荧光光强确定刻蚀区是否残留有光刻胶。
示例性的，如果刻蚀区的光刻胶发生变质导致无法发生曝光反应，则刻蚀区有光刻胶，那么当检测光源的光照射在刻蚀区时，光刻胶会出射荧光；如果刻蚀区光刻胶没有变质，则可以正常曝光反应，在后续显影时可以被正常去除，那么当检测光源的光照射在刻蚀区时，光刻胶不会出射荧光。因此，光学检测仪可根据刻蚀区荧光光强确定刻蚀区是否残留有光刻胶。
示例性的，如果保留区光刻胶残缺，那么当检测光源的光照射在保留区时，光刻胶出射的荧光的光强小于保留区光刻胶完整时光刻胶出射的荧光光强。因此，光学检测仪可根据保留区荧光光强确定保留区是否残缺光刻胶。
本公开实施例提供的检测半导体制作工艺缺陷的方法，在光刻胶中形成荧光剂，其中光刻胶中的荧光剂能吸收检测光源发出的光并将其转化为荧光发射出来且容易被光学检测仪捕捉到，因此，光刻胶中形成荧光剂的方式可以增大光刻胶存在缺陷时的荧光光强和光刻胶不存在缺陷时的荧光光强差异，进而可以降低光刻胶缺陷的检测难度，提高光刻胶缺陷检测的准确度。
在上述技术方案的基础上，在一些实施例中，利用离子注入方式将荧光剂注入至光刻胶中。
其中，离子注入是将掺杂剂通过离子注入机的离化、加速度和质量分析，成为一束由所需杂质离子组成的高能离子流而投入靶内部，并通过逐点扫描完成注入。在一些实施例中，此处，荧光剂为掺杂剂，靶为光刻胶。采用离子注入的方式将荧光剂注入光刻胶中，使得可精确控制荧光剂的掺杂浓度以及掺杂深度。
在上述技术方案的基础上，在一些实施例中，荧光剂在光刻胶中的浓度大于0％且小于1％。
在一些实施例中，这里所述的荧光剂在光刻胶中的浓度的定义是，(荧光剂质量/光刻胶质量)×100％。通过设置荧光剂的浓度大于0％且小于1％，可避免光刻胶中掺杂过多的荧光剂，进而保证掺杂的荧光剂不会对光刻胶的光灵敏度以及光刻胶显影之后的粗糙度造成影响。
在上述技术方案的基础上，在一些实施例中，形成有荧光剂的光刻胶的PH值大于0且小于6。
可以理解的是，通常情况下，对化学放大光刻胶而言，曝光光源照射在光刻胶上时，光刻胶会产生一种酸，该酸能够解离光刻胶中的树脂成分，而显影剂是呈碱性的，因此，显影剂可溶解被曝光光源照射过的光刻胶。当光刻胶层呈酸性时，有利于提高光刻胶的光灵敏度，如此，可使曝光过程中所需要的光强不会太高。
图3是本公开实施例提供的另一种检测半导体制作工艺缺陷的方法的流程图。参见图3，该方法包括：
S210、在基板上形成光刻胶。
S220、对光刻胶进行曝光和显影。
在一些实施例中，对光刻胶的曝光时间以及显影时间本领域技术人员可根据实际情况设置。
在一些实施例中，若光刻胶为正性光刻胶，在曝光显影之后，经过光照的光刻胶被去除掉，未经过光照的光刻胶被保留，即可将掩模板上的图案转移至光刻胶上；若光刻胶为负性光刻胶，在曝光显影之后，经过光照的光刻胶被保留，未经过光照的光刻胶被去除掉，即可将掩模板 上的图案转移至光刻胶上。
S230、对显影后的光刻胶进行荧光剂的注入。
可以理解的是，在显影之后对光刻胶进行荧光剂注入可防止离子注入荧光剂的过程对光刻胶造成破坏，保证光刻胶正常进行曝光和显影，进而提高将掩模板图案准确转移至光刻胶的概率。
还可以理解的是，通过对显影后的光刻胶进行荧光剂的注入，可减少需要进行荧光剂注入的光刻胶的面积，从而节省荧光剂的用量，降低光刻胶缺陷检测的成本
S240、利用荧光剂检测显影后的光刻胶的缺陷。
本公开实施例提供的检测半导体制作工艺缺陷的方法，通过对显影后的光刻胶进行荧光剂的注入，可避免荧光剂注入过程影响光刻胶显影曝光的效果，提高掩模板图案转移成功概率，并且还可减少需要进行荧光剂注入的光刻胶的面积，进而减小荧光剂用量，降低成本。
图4是本公开实施例提供的又一种检测半导体制作工艺缺陷的方法的流程图。参见图4，该方法包括：
S310、在基板上形成光刻胶。
S320、烘烤光刻胶至玻璃转化温度或高于玻璃转化温度后利用离子注入方式将荧光剂注入至光刻胶中。
在一些实施例中，烘烤光刻胶至玻璃转化温度或高于玻璃转化温度的过程可以在涂胶之后，或者在曝光之后，或者显影之后，此处不作限定，本领域技术人员可根据实际情况设置。优选地，在光刻胶进行曝光之前或者显影之后进行荧光剂注入。如此，可避免荧光剂注入过程影响光刻胶的曝光或者显影效果。
在一些实施例中，大多数光刻胶是无定向的聚合体。当温度高于玻璃化转换温度，聚合体中相当多的链条片以分子运动形式出现，因此呈粘性流动。当温度低于玻璃化转换温度，链条片段的分子运动停止，聚合体表现为玻璃。由于温度高于玻璃转化温度时，聚合体流动容易，于是加热光刻胶至它的玻璃转化温度一段时间进行退火处理，可达到更稳定的能量状态。此外，当光刻胶呈粘性流动状态时，有利于提高荧光剂的注入效果，具体表现为，在相对较小的注入能量下将荧光剂注入一个 相对较深的深度，以及荧光剂在光刻胶中的均匀分布。
在一些实施例中，烘烤温度范围为50℃至500℃；烘烤时间范围为50s至500s。如此，既可以避免温度过高对光刻胶造成破坏，还可使光刻胶充分地由玻璃态变为粘性流动状态。
S330、利用荧光剂检测显影后的光刻胶的缺陷。
本公开实施例提供的检测半导体制作工艺缺陷的方法，通过烘烤光刻胶至玻璃转化温度或高于玻璃转化温度后再利用离子注入方式将荧光剂注入至光刻胶中，使得注入荧光剂时光刻胶呈粘性流动状态，有利于提高荧光剂的注入效果。
在上述技术方案的基础上，在一些实施例中，荧光剂的注入能量小于10KeV。如此，可避免由于注入能量过大造成光刻胶遭到破坏的问题。
在上述技术方案的基础上，在一些实施例中，在光刻胶发生铰链反应之前进行荧光剂注入。在一些实施例中，当光刻胶发生铰链反应之后，光刻胶会由粘性流动状态变为固态，因此，在光刻胶发生铰链反应之前注入荧光剂也即是在光刻胶处于粘性流动状态时注入荧光剂，可使荧光剂和光刻胶充分混合，提高荧光剂的注入效果。
注意，上述仅为本公开的较佳实施例及所运用技术原理。本领域技术人员会理解，本公开不限于这里所述的特定实施例，对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本公开的保护范围。因此，虽然通过以上实施例对本公开进行了较为详细的说明，但是本公开不仅仅限于以上实施例，在不脱离本公开构思的情况下，还可以包括更多其他等效实施例，而本公开的范围由所附的权利要求范围决定。

Claims (14)

  1. 一种检测半导体制作工艺缺陷的方法，其中，包括：
    在基板上形成光刻胶；
    在所述光刻胶中形成荧光剂；
    利用所述荧光剂检测显影后的所述光刻胶的缺陷。
  2. 根据权利要求1所述的检测半导体制作工艺缺陷的方法，其中，所述荧光剂的结构包括-C＝C-C＝C-C＝C-或-N＝C-C＝N-C＝C-中的任一种或其组合。
  3. 根据权利要求1所述的检测半导体制作工艺缺陷的方法，其中，所述荧光剂的类型为二苯乙烯型、香豆素型、吡唑啉型、苯并恶唑型和二甲酰亚胺型中的任一种或其任意组合。
  4. 根据权利要求1所述的检测半导体制作工艺缺陷的方法，其中，所述荧光剂在所述光刻胶中的浓度大于0％且小于1％。
  5. 根据权利要求1所述的检测半导体制作工艺缺陷的方法，其中，所述形成有荧光剂的光刻胶的PH值大于0且小于6。
  6. 根据权利要求1所述的检测半导体制作工艺缺陷的方法，其中，所述荧光剂出射的荧光波长范围为420nm-450nm。
  7. 根据权利要求1所述的检测半导体制作工艺缺陷的方法，其中，所述在所述光刻胶中形成荧光剂的步骤中，包括：
    利用离子注入方式将所述荧光剂注入至所述光刻胶中。
  8. 根据权利要求7所述的检测半导体制作工艺缺陷的方法，其中，所述利用离子注入方式将所述荧光剂注入至所述光刻胶中的步骤中，还包括：
    对所述光刻胶进行曝光和显影；
    对显影后的所述光刻胶进行所述荧光剂的注入。
  9. 根据权利要求7所述的检测半导体制作工艺缺陷的方法，其中，所述利用离子注入方式将所述荧光剂注入至所述光刻胶中的步骤中，还包括：
    烘烤所述光刻胶至玻璃转化温度或高于所述玻璃转化温度后利用离子注入方式将所述荧光剂注入至所述光刻胶中。
  10. 根据权利要求9所述的检测半导体制作工艺缺陷的方法，其中，所述烘烤温度范围为50℃至500℃；所述烘烤时间范围为50s至500s。
  11. 根据权利要求9所述的检测半导体制作工艺缺陷的方法，其中，还包括：
    在所述光刻胶进行曝光之前或者显影之后进行所述荧光剂注入。
  12. 根据权利要求7所述的检测半导体制作工艺缺陷的方法，其中，还包括：
    在所述光刻胶发生铰链反应之前进行所述荧光剂注入。
  13. 根据权利要求7中任一所述的检测半导体制作工艺缺陷的方法，其中：
    所述荧光剂的注入能量小于10KeV。
  14. 根据权利要求1所述的检测半导体制作工艺缺陷的方法，其中，所述缺陷包括光刻胶残留缺陷和光刻胶变质缺陷中的任一种或其组合。
PCT/CN2021/079600 2020-03-10 2021-03-08 检测半导体制作工艺缺陷的方法 WO2021180045A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/386,487 US11988970B2 (en) 2020-03-10 2021-07-27 Method for detecting defect in semiconductor fabrication process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010162151.2A CN113376968B (zh) 2020-03-10 2020-03-10 一种检测半导体制作工艺缺陷的方法
CN202010162151.2 2020-03-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/386,487 Continuation US11988970B2 (en) 2020-03-10 2021-07-27 Method for detecting defect in semiconductor fabrication process

Publications (1)

Publication Number Publication Date
WO2021180045A1 true WO2021180045A1 (zh) 2021-09-16

Family

ID=77568773

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/079600 WO2021180045A1 (zh) 2020-03-10 2021-03-08 检测半导体制作工艺缺陷的方法

Country Status (3)

Country Link
US (1) US11988970B2 (zh)
CN (1) CN113376968B (zh)
WO (1) WO2021180045A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0643110A (ja) * 1992-07-24 1994-02-18 Miyagi Oki Denki Kk レジストパターン欠陥の検出方法
US20170103924A1 (en) * 2015-10-08 2017-04-13 Samsung Electronics Co., Ltd. Method for inspecting photoresist pattern
CN107065436A (zh) * 2017-04-27 2017-08-18 苏州大学 具有荧光效应的碳纳米点光刻胶及其成像方法
CN111863601A (zh) * 2019-04-30 2020-10-30 台湾积体电路制造股份有限公司 制造半导体装置的方法以及光刻胶

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4800282A (en) 1985-02-07 1989-01-24 Sharp Kabushiki Kaisha Apparatus and method for detecting residual organic compounds
JPS6281634A (ja) * 1985-10-07 1987-04-15 Canon Inc リソグラフイ用レジスト
JPH08286390A (ja) * 1995-04-13 1996-11-01 Adomon Sci Kk フォトレジスト基板の検査方法及びフォトレ ジスト基板の製造方法
US6770407B2 (en) * 2001-03-26 2004-08-03 Shipley Company, L.L.C. Methods for monitoring photoresists
US7291564B1 (en) * 2006-04-28 2007-11-06 Hewlett-Packard Development Company, L.P. Method and structure for facilitating etching
US20130020507A1 (en) * 2010-06-17 2013-01-24 Life Technologies Corporation Methods for Detecting Defects in Inorganic-Coated Polymer Surfaces
CN102207676B (zh) * 2010-03-30 2013-04-03 Asml控股股份有限公司 使用光刻术制造半导体器件的方法和系统
KR102445340B1 (ko) * 2017-12-20 2022-09-21 삼성전자주식회사 포토레지스트 검출 물질 및 이를 이용한 반도체 소자의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0643110A (ja) * 1992-07-24 1994-02-18 Miyagi Oki Denki Kk レジストパターン欠陥の検出方法
US20170103924A1 (en) * 2015-10-08 2017-04-13 Samsung Electronics Co., Ltd. Method for inspecting photoresist pattern
CN107065436A (zh) * 2017-04-27 2017-08-18 苏州大学 具有荧光效应的碳纳米点光刻胶及其成像方法
CN111863601A (zh) * 2019-04-30 2020-10-30 台湾积体电路制造股份有限公司 制造半导体装置的方法以及光刻胶

Also Published As

Publication number Publication date
CN113376968A (zh) 2021-09-10
US11988970B2 (en) 2024-05-21
US20210356870A1 (en) 2021-11-18
CN113376968B (zh) 2023-04-07

Similar Documents

Publication Publication Date Title
JP3768819B2 (ja) 半導体装置の製造方法
TW393699B (en) Semiconductor device and its manufacturing method
US7767385B2 (en) Method for lithography for optimizing process conditions
ITMI980673A1 (it) Materiale per formare una configurazione fine e procedimento per fabbricare un dispositivo semiconduttore impiegante il medesimo
JP4513965B2 (ja) 感放射線性樹脂組成物
US6713236B2 (en) Lithography method for preventing lithographic exposure of peripheral region of semiconductor wafer
JP6816083B2 (ja) 半導体装置の製造方法
US20140273513A1 (en) Resist composition and manufacturing method of semiconductor device
US20080138746A1 (en) Pattern formation method using fine pattern formation material for use in semiconductor fabrication step
US5212028A (en) Fabrication of fine patterns by selective surface reaction and inspection method therefor
WO2021180045A1 (zh) 检测半导体制作工艺缺陷的方法
US9891524B2 (en) Semiconductor device and method of manufacturing the same
WO2002067056A1 (fr) Composition de reserve et procede de formation d'un motif de reserve
US6576405B1 (en) High aspect ratio photolithographic method for high energy implantation
US20060147839A1 (en) Photosensitive coating material for a substrate
US6800407B2 (en) Method for experimentally verifying imaging errors in photomasks
JP2011034930A (ja) パターン形成方法
KR20040002491A (ko) 레지스트 패턴의 제조 방법
KR101148454B1 (ko) 감방사선성 수지 조성물
US7294440B2 (en) Method to selectively correct critical dimension errors in the semiconductor industry
TW200807500A (en) Forming method of resist pattern and writing method using electric charge corpuscular ray
JP2005284208A (ja) 感光性樹脂組成物及びパターン形成方法
US20230152705A1 (en) UV Treatment of EUV Resists
JP2001230175A (ja) パターン形成方法及び電子線露光装置
US7160670B2 (en) Resist for forming a structure for aligning an electron or ion beam and technique for forming the structure

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21768448

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21768448

Country of ref document: EP

Kind code of ref document: A1