WO2021179403A1 - 液晶显示面板 - Google Patents
液晶显示面板 Download PDFInfo
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- WO2021179403A1 WO2021179403A1 PCT/CN2020/085931 CN2020085931W WO2021179403A1 WO 2021179403 A1 WO2021179403 A1 WO 2021179403A1 CN 2020085931 W CN2020085931 W CN 2020085931W WO 2021179403 A1 WO2021179403 A1 WO 2021179403A1
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- WIPO (PCT)
- Prior art keywords
- liquid crystal
- display panel
- crystal display
- slit
- dbs
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
Definitions
- This application relates to the field of display technology, and in particular to a liquid crystal display panel.
- a black matrix is usually arranged above the data line to shield light to improve the contrast of the display panel.
- the black matrix often moves left and right, which in turn leads to light leakage in the data line.
- the existing pixel structure uses DBS (Data line BM Less) technology to remove the black matrix above the data line, and set the DBS electrode above the data line, and make the potential of the DBS electrode the same as the common electrode potential on the color film substrate, so that the data The corresponding liquid crystal molecules above the line always remain undeflected, thereby shielding light.
- the DBS electrode and the data line are located on the array substrate, so the alignment accuracy deviation is small, and the light leakage problem caused by the movement of the black matrix can be avoided.
- the embodiment of the present application provides a liquid crystal display panel to solve the problem of the existing liquid crystal display panel.
- the DBS electrode is arranged above the data line to shield the light.
- the DBS electrode always overlaps the data line, which causes the parasitic capacitance of the data line to be relatively large, thereby affecting The technical problem of its application in high-frequency, large-size display panels.
- the embodiment of the present application provides a liquid crystal display panel, including a color filter substrate, an array substrate disposed opposite to the color filter substrate, a liquid crystal layer sandwiched between the color filter substrate and the array substrate, and the array
- the substrate includes a plurality of data lines and a plurality of DBS electrodes arranged above the data lines; wherein the DBS electrode includes at least one slit-shaped opening arranged at intervals; the color filter substrate faces one side of the array substrate A black matrix is provided, and the black matrix covers the corresponding slit-shaped opening; the array substrate is further provided with a pixel electrode, and the DBS electrode and the pixel electrode are provided in the same layer.
- the width of the black matrix is greater than or equal to the width of the data line.
- the orthographic projection of at least one of the slit-shaped openings on the data line is located on the center line of the extending direction of the data line.
- the slit-shaped opening is rectangular.
- the length of the slit-shaped opening ranges from 5 micrometers to 20 micrometers, and the width of the slit-shaped opening ranges from 2.5 micrometers to one third of the width of the data line. .
- the width of the DBS electrode is greater than the width of the data line.
- the adjacent DBS electrodes are connected by a bridge wire, and the DBS electrode and the bridge wire are arranged in the same layer.
- the color filter substrate further includes a common electrode, the common electrode and the DBS electrode have the same potential, and the width of the black matrix is greater than or equal to the width of the data line.
- the orthographic projection of at least one of the slit-shaped openings on the data line is located on the center line of the extending direction of the data line.
- the slit-shaped opening is rectangular.
- the length of the slit-shaped opening ranges from 5 micrometers to 20 micrometers, and the width of the slit-shaped opening ranges from 2.5 micrometers to one third of the width of the data line. .
- the width of the DBS electrode is greater than the width of the data line.
- the adjacent DBS electrodes are connected by a bridge wire, and the DBS electrode and the bridge wire are arranged in the same layer.
- the color filter substrate further includes a common electrode, and the common electrode has the same potential as the DBS electrode.
- An embodiment of the present application also provides a liquid crystal display panel, including a color filter substrate, an array substrate disposed opposite to the color filter substrate, and a liquid crystal layer sandwiched between the color filter substrate and the array substrate;
- the array substrate includes a plurality of data lines and a plurality of DBS electrodes arranged above the data lines; wherein, the DBS electrodes include at least one slit-shaped opening arranged at intervals.
- a black matrix is provided on a side of the color filter substrate facing the array substrate, and the black matrix covers the corresponding slit-shaped opening.
- the width of the black matrix is greater than or equal to the width of the data line.
- the orthographic projection of at least one of the slit-shaped openings on the data line is located on the center line of the extending direction of the data line.
- the slit-shaped opening is rectangular.
- the length of the slit-shaped opening ranges from 5 micrometers to 20 micrometers, and the width of the slit-shaped opening ranges from 2.5 micrometers to one third of the width of the data line. .
- the width of the DBS electrode is greater than the width of the data line.
- a pixel electrode is further provided on the array substrate, and the DBS electrode and the pixel electrode are provided in the same layer.
- the adjacent DBS electrodes are connected by a bridge wire, and the DBS electrode and the bridge wire are arranged in the same layer.
- the color filter substrate further includes a common electrode, and the common electrode has the same potential as the DBS electrode.
- FIG. 1 is a schematic structural diagram of a liquid crystal display panel provided by an embodiment of the application.
- FIG. 2 is a schematic diagram of the structure of a DBS electrode and a pixel electrode provided by an embodiment of the application;
- FIG. 3 is a schematic diagram of the structure of a DBS electrode provided by an embodiment of the application.
- FIG. 4 is a schematic diagram of the structure of a DBS electrode provided by other embodiments of the application.
- first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, “multiple” means two or more than two, unless otherwise specifically defined.
- connection should be understood in a broad sense, unless otherwise clearly specified and limited.
- it can be a fixed connection or a detachable connection.
- Connected or integrally connected it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relation.
- an intermediate medium it can be the internal communication of two components or the interaction of two components relation.
- the "on" or “under” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
- the "above”, “above” and “above” of the first feature on the second feature include the first feature directly above and obliquely above the second feature, or it simply means that the first feature is higher in level than the second feature.
- the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
- an embodiment of the present application provides a liquid crystal display panel 100, which includes a color filter substrate 20 and an array substrate 10 disposed oppositely, and a liquid crystal layer sandwiched between the color filter substrate 20 and the array substrate 10. 30.
- the array substrate 10 includes a plurality of data lines 12 and a plurality of DBS electrodes arranged above the data lines 12.
- the width of the DBS electrode 14 is greater than the width of the data line 12, and one DBS electrode 14 is correspondingly provided above each data line 12.
- the adjacent DBS electrodes 14 are connected by bridge wires 16, and the potentials of the DBS electrodes 14 and the common electrodes 23 on the color filter substrate 20 are the same, so that the liquid crystal molecules corresponding to the data lines 12 are always Maintain the undeflected state, thereby playing a role in shading.
- the embodiments of the present application pass The structure of the DBS electrode is changed, and a slit-shaped opening 141 is added to the DBS electrode 14 to solve the above-mentioned defects.
- the DBS electrode 14 includes at least one slit-shaped opening 141 arranged at intervals, and the slit-shaped opening 141 can reduce the overlapping area of the DBS electrode 14 and the data line 12, thereby achieving the effect of reducing the parasitic capacitance of the data line 12.
- a black matrix 22 may be provided on the side of the color filter substrate 20 facing the array substrate 10, and the black matrix 22 covers the corresponding slit-shaped opening 141, so as to make up for the insufficient light shielding due to the existence of the slit-shaped opening 141.
- the black matrix may move left and right, so the width of the black matrix 22 can be set to be greater than or equal to the data The width of line 12.
- the orthographic projection of at least one slit-shaped opening 141 on the data line 12 may be located at the center of the extension direction of the data line 12.
- the light leakage at the slit-shaped opening 141 is at the center of the data line, and this part of the light leakage is covered by the black matrix 22, and even if the alignment of the black matrix 22 is shifted, the black matrix 22 can be covered The slit-shaped opening 141.
- the data line 12 and the DBS electrode 14 are on the same array substrate 10, and the alignment accuracy deviation is small. Therefore, at least one of the slit-shaped openings 141 can be arranged at an interval in the center of the extension direction of the DBS electrode 14 On the line, the slit-shaped opening 141 is formed by digging a hole in the center of the DBS electrode 14.
- the plurality of slit-shaped openings 141 may be arranged at equal intervals, and the distance between two adjacent slit-shaped openings 141 depends on actual design requirements, and there is no limitation here.
- the distance between two adjacent slit-shaped openings 141 may be zero. At this time, only one slit-shaped opening 141 is opened on the DBS electrode 14.
- the slit-shaped opening 141 penetrates the upper and lower surfaces of the DBS electrode 14.
- the extension direction (length direction) of the slit-shaped opening 141 is the same as the extension direction of the DBS electrode 14.
- the edge of the DBS electrode ensures the light shielding ability of the edge of the DBS electrode 14 to compensate for the light leakage problem caused by the movement of the black matrix 22.
- the slit-shaped opening 141 is rectangular. In other embodiments, as shown in FIG. Shapes, squares and other shapes.
- the width of the slit-shaped opening 141 cannot be too wide to avoid light leakage at the edge of the DBS.
- the specific size of the slit-shaped opening 141 depends on the actual pixel size and the width of the data line.
- the length of the slit-shaped opening 141 ranges from 5 ⁇ m to 20 ⁇ m, and the width of the slit-shaped opening ranges from 2.5 ⁇ m to one third of the width of the data line Specifically, in this embodiment, the length of the slit-shaped opening may be 10 micrometers, and the width may be 3 micrometers.
- the height of the triangle may be the same as the length of the rectangle, and the width may be the same as the width of the rectangle.
- the triangular opening area is not as large as the rectangular opening area, and the degree of reducing the parasitic capacitance is not as obvious as the rectangular opening, the contrast ratio is higher than that of the rectangular opening.
- the array substrate 10 is further provided with a pixel electrode 15, and the DBS electrode 14 can be provided in the same layer as the pixel electrode 15, and the pixel electrode 15 and the DBS electrode 14 can be formed through the same patterning process.
- Adjacent DBS electrodes 14 can be connected by a bridge line 16.
- the bridge line 16 can bridge the two DBS electrodes 14 through a via; when When the DBS electrode and the bridge wire 16 are arranged on the same layer, the bridge wire 16 can directly connect the two DBS electrodes.
- the array substrate 10 includes a first base substrate 11, a data line 12 disposed on the first base substrate 11, a source electrode and a drain electrode disposed on the same layer as the data line 12 (Not shown in the figure), an insulating layer 13 arranged on the data line 12, and a plurality of DBS electrodes 14 and pixel electrodes 15 arranged in the same layer and arranged on the insulating layer.
- the array substrate 10 also includes a gate, a scan line, an active layer, etc., which can be referred to the prior art, which will not be repeated here.
- the pixel electrode 15 may include a main pixel electrode and a sub-pixel electrode separated from each other, and the bridge line 16 is arranged at all Between the main pixel electrode and the sub-pixel electrode.
- the scan line is arranged between the main pixel electrode and the sub-pixel electrode, and both the main pixel electrode and the sub-pixel electrode are connected to the scan line corresponding to the row of sub-pixels.
- the bridge line 16 is routed along the edge of the scan line, thereby reducing signal interference between signal lines.
- the pixel electrode 15, the bridge line 16, and the pixel electrode 15 may all be indium tin oxide materials.
- the color filter substrate 20 includes a second base substrate 21, a black matrix 22 disposed on the side of the second base substrate 21 facing the array substrate 10, and a common electrode disposed on the black matrix 22 twenty three.
- the array substrate 10 may be a COA (Color Filter On Array, color filter integrated on the array substrate) substrate, the array substrate 10 further includes a color filter layer (not shown in the figure), the color filter The layer is arranged above the data line 12.
- COA Color Filter On Array, color filter integrated on the array substrate
- At least one slit-shaped opening 141 is added to the DBS electrode 14 above the data line 12, and the black matrix 22 above the data line 12 is reserved to shield the slit-shaped opening 141, thereby solving the problem of data loss in the existing pixel structure.
- the line and the DBS electrode always keep coincident, which leads to the problem of large parasitic capacitance of the data line.
- the parasitic capacitance of the data line in a single pixel can be reduced by 30% through analog design in this embodiment, which is beneficial to the application of the DBS electrode in a high-frequency, large-size display panel.
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Abstract
一种液晶显示面板(100),包括彩膜基板(20)和阵列基板(10)、以及液晶层(30),阵列基板(10)包括多条数据线(12)和多个设置于数据线(12)上方的DBS电极(14),DBS电极(14)包括至少一个间隔设置的狭缝状开口(141)。能够解决现有的像素结构中由于数据线(12)与DBS电极(14)始终保持重合,导致数据线(12)的寄生电容较大的问题,进而有利于DBS电极(14)在高频率、大尺寸显示面板中的应用。
Description
本申请涉及显示技术领域,尤其涉及一种液晶显示面板。
在传统的像素结构中,通常在数据线上方设置黑矩阵(Black matrix,BM)进行遮光,以提高显示面板的对比度。但在制备过程中,往往由于上下基板对位精度存在偏差,导致黑矩阵发生左右移动,进而导致数据线漏光。现有的像素结构采用DBS(Data line BM Less)技术,去除数据线上方的黑矩阵,在数据线上方设置DBS电极,并使得DBS电极的电位与彩膜基板上的公共电极电位相同,使得数据线上方对应的液晶分子始终保持未偏转状态,进而起到遮光的作用,另外,DBS电极与数据线同位于阵列基板上,对准精度偏差较小,能够避免由于黑矩阵移动导致的漏光问题。
然而,在此种像素结构中,由于DBS电极始终与数据线重合,导致数据线的寄生电容较大,限制其在高频率、大尺寸显示面板中的应用。
本申请实施例提供一种液晶显示面板,以解决现有的液晶显示面板,通过在数据线上方设置DBS电极进行遮光,DBS电极始终与数据线重合,导致数据线的寄生电容较大,进而影响其在高频率、大尺寸显示面板中的应用的技术问题。
为解决上述问题,本申请实施例提供的技术方案如下:
本申请实施例提供一种液晶显示面板,包括彩膜基板、与所述彩膜基板相对设置的阵列基板、夹设于所述彩膜基板与所述阵列基板之间的液晶层,所述阵列基板包括多条数据线和多个设置于所述数据线上方的DBS电极;其中,所述DBS电极包括至少一个间隔设置的狭缝状开口;所述彩膜基板朝向所述阵列基板的一侧设置有黑矩阵,所述黑矩阵覆盖与其对应的所述狭缝状开口;所述阵列基板上还设置有像素电极,所述DBS电极与所述像素电极同层设置。
在本申请的至少一种实施例中,所述黑矩阵的宽度大于或等于所述数据线的宽度。
在本申请的至少一种实施例中,至少一个所述狭缝状开口在所述数据线上的正投影位于所述数据线的延伸方向的中心线上。
在本申请的至少一种实施例中,所述狭缝状开口为矩形。
在本申请的至少一种实施例中,所述狭缝状开口的长度范围为5微米至20微米,所述狭缝状开口的宽度范围为2.5微米至所述数据线宽度的三分之一。
在本申请的至少一种实施例中,所述DBS电极的宽度大于所述数据线的宽度。
在本申请的至少一种实施例中,相邻的所述DBS电极通过桥接线连接,所述DBS电极与所述桥接线同层设置。
在本申请的至少一种实施例中,所述彩膜基板还包括公共电极,所述公共电极与所述DBS电极电位相同,所述黑矩阵的宽度大于或等于所述数据线的宽度。
在本申请的至少一种实施例中,至少一个所述狭缝状开口在所述数据线上的正投影位于所述数据线的延伸方向的中心线上。
在本申请的至少一种实施例中,所述狭缝状开口为矩形。
在本申请的至少一种实施例中,所述狭缝状开口的长度范围为5微米至20微米,所述狭缝状开口的宽度范围为2.5微米至所述数据线宽度的三分之一。
在本申请的至少一种实施例中,所述DBS电极的宽度大于所述数据线的宽度。
在本申请的至少一种实施例中,相邻的所述DBS电极通过桥接线连接,所述DBS电极与所述桥接线同层设置。
在本申请的至少一种实施例中,所述彩膜基板还包括公共电极,所述公共电极与所述DBS电极电位相同。
本申请实施例还提供一种液晶显示面板,包括彩膜基板、与所述彩膜基板相对设置的阵列基板、夹设于所述彩膜基板与所述阵列基板之间的液晶层;所述阵列基板包括多条数据线和多个设置于所述数据线上方的DBS电极;其中,所述DBS电极包括至少一个间隔设置的狭缝状开口。
在本申请的至少一种实施例中,所述彩膜基板朝向所述阵列基板的一侧设置有黑矩阵,所述黑矩阵覆盖与其对应的所述狭缝状开口。
在本申请的至少一种实施例中,所述黑矩阵的宽度大于或等于所述数据线的宽度。
在本申请的至少一种实施例中,至少一个所述狭缝状开口在所述数据线上的正投影位于所述数据线的延伸方向的中心线上。
在本申请的至少一种实施例中,所述狭缝状开口为矩形。
在本申请的至少一种实施例中,所述狭缝状开口的长度范围为5微米至20微米,所述狭缝状开口的宽度范围为2.5微米至所述数据线宽度的三分之一。
在本申请的至少一种实施例中,所述DBS电极的宽度大于所述数据线的宽度。
在本申请的至少一种实施例中,所述阵列基板上还设置有像素电极,所述DBS电极与所述像素电极同层设置。
在本申请的至少一种实施例中,相邻的所述DBS电极通过桥接线连接,所述DBS电极与所述桥接线同层设置。
在本申请的至少一种实施例中,所述彩膜基板还包括公共电极,所述公共电极与所述DBS电极电位相同。
通过在数据线上方的DBS电极上增设多个狭缝状开口,且保留数据线上方的黑矩阵以对狭缝状开口进行遮光,从而解决现有的像素结构中由于数据线与DBS电极始终保持重合,导致数据线的寄生电容较大的问题,进而有利于DBS电极在高频率、大尺寸显示面板中的应用。
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的液晶显示面板的结构示意图;
图2为本申请实施例提供的DBS电极与像素电极的结构示意图;
图3为本申请实施例提供的DBS电极的结构示意图;
图4为本申请其他实施例提供的DBS电极的结构示意图。
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接或可以相互通讯;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开,下文中对特定例子的部件和设置进行描述。当然,它们仅仅为示例,并且目的不在于限制本申请。此外,本申请可以在不同例子中重复参考数字和/或参考字母,这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施方式和/或设置之间的关系。此外,本申请提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
如图1所示,本申请实施例提供一种液晶显示面板100,包括相对设置的彩膜基板20和阵列基板10、以及夹设于所述彩膜基板20和阵列基板10之间的液晶层30。其中,所述阵列基板10包括多条数据线12和多个设置于所述数据线12上方的DBS电极。
所述DBS电极14的宽度大于所述数据线12的宽度,每一数据线12的上方对应设有一个所述DBS电极14。
如图2所示,相邻的所述DBS电极14通过桥接线16连接,所述DBS电极14与彩膜基板20上的公共电极23的电位相同,从而使得数据线12对应处的液晶分子始终保持未偏转状态,从而起到遮光作用。
但是由于现有结构中,在厚度方向上,DBS电极完全与数据线重合,导致数据线的寄生电容较大,限制了DBS电极在高频率、大尺寸面板中的应用,因此本申请实施例通过改变DBS电极的结构,在DBS电极14上增设狭缝状开口141以解决上述缺陷。
所述DBS电极14包括至少一个间隔设置的狭缝状开口141,所述狭缝状开口141能够减少DBS电极14与数据线12的重合面积,从而达到降低数据线12的寄生电容的效果。
由于所述DBS电极14上开设有所述狭缝状开口141,为了进一步增强遮光效果,可在所述彩膜基板20朝向所述阵列基板10的一侧设置黑矩阵22,且所述黑矩阵22覆盖与其对应的所述狭缝状开口141,从而弥补由于所述狭缝状开口141的存在导致的遮光不足。
所述彩膜基板20与所述阵列基板10对位时,由于对位精度存在偏差,所述黑矩阵可能发生左右移动,因此可将所述黑矩阵22的宽度设置为大于或等于所述数据线12的宽度。
如图3所示,进一步地,由于黑矩阵22的对位精度有限,至少一个所述狭缝状开口141在所述数据线12上的正投影可位于所述数据线12的延伸方向的中心线121上,使得所述狭缝状开口141处的漏光处于数据线的中心处,该部分的漏光由黑矩阵22遮盖,且即使黑矩阵22对位发生偏移,也能使得黑矩阵22覆盖所述狭缝状开口141。
所述数据线12与所述DBS电极14同处于阵列基板10上,对位精度偏差较小,因此,至少一个所述狭缝状开口141可间隔设置于所述DBS电极14的延伸方向的中心线上,通过在所述DBS电极14的中心处挖孔形成所述狭缝状开口141。
多个所述狭缝状开口141可等间距设置,相邻的两个所述狭缝状开口141之间的距离视实际的设计需要而定,这里不做限制。
相邻的两个所述狭缝状开口141之间的距离可为零,此时,所述DBS电极14上仅开设一个狭长的所述狭缝状开口141。
所述狭缝状开口141贯穿所述DBS电极14上下表面。
所述狭缝状开口141的延伸方向(长度方向)与所述DBS电极14的延伸方向相同,所述狭缝状开口141为封闭形状的开口,避免所述狭缝状开口141设置于所述DBS电极的边缘,从而保证所述DBS电极14边缘的遮光能力,以补偿所述黑矩阵22移动造成的漏光问题。
在本申请实施例中,所述狭缝状开口141为矩形,在其他实施例中,如图4所示,所述狭缝状开口141为椭圆形,还可为其他形状,如三角形、圆形、正方形等形状。
所述狭缝状开口141的宽度不能过宽,避免所述DBS边缘漏光,所述狭缝状开口141的具体尺寸视实际像素大小和所述数据线的宽度而定。
当所述狭缝状开口141为矩形时,所述狭缝状开口141的长度范围为5微米至20微米,所述狭缝状开口的宽度范围为2.5微米至数据线宽度的三分之一,具体地,在本实施例中,所述狭缝状开口长度可为10微米,宽度可为3微米。
当所述狭缝状开口141为三角形时,所述三角形的高度可与所述矩形的长度相同,宽度可与所述矩形的宽度相同。虽然三角形状的开口面积没有矩形的开口面积大,减小寄生电容的程度没有矩形明显,但对比度相对于矩形开口的对比度更高。
所述阵列基板10上还设置有像素电极15,所述DBS电极14可与所述像素电极15同层设置,可经过同一构图工艺形成所述像素电极15和所述DBS电极14。
相邻的所述DBS电极14可通过桥接线16连接,当所述DBS电极14与所述桥接线16异层设置时,所述桥接线16可通过过孔桥接两所述DBS电极14;当所述DBS电极与所述桥接线16同层设置时,所述桥接线16可直接连接两所述DBS电极。
在本实施例中,所述阵列基板10包括第一衬底基板11、设置于所述第一衬底基板11上的数据线12、与所述数据线12同层设置的源极和漏极(图中未示出)、设置于所述数据线12上的绝缘层13、以及同层设置且设置于所述绝缘层上的多个DBS电极14和像素电极15。所述阵列基板10还包括栅极、扫描线、有源层等,可参考现有技术,这里不再赘述。
当所述DBS电极14、所述桥接线16、以及所述像素电极15同层设置时,所述像素电极15可包括隔开的主像素电极和次像素电极,所述桥接线16设置于所述主像素电极和次像素电极之间。
所述扫描线设置于所述主像素电极和所述次像素电极之间,且所述主像素电极和所述次像素电极均与该行子像素对应的扫描线连接。
所述桥接线16沿着扫描线的边缘进行走线,从而降低信号线之间的信号干扰。
所述像素电极15、所述桥接线16、以及所述像素电极15可均为氧化铟锡材料。
所述彩膜基板20包括第二衬底基板21、设置于所述第二衬底基板21朝向所述阵列基板10一侧的黑矩阵22、以及设置于所述黑矩阵22之上的公共电极23。
所述阵列基板10可为COA(Color Filter On Array,彩色滤光片整合于阵列基板上)基板,所述阵列基板10还包括彩色虑光层(图中未示出),所述彩色虑光层设置于所述数据线12的上方。
通过在数据线12上方的DBS电极14上增设至少一个狭缝状开口141,且保留数据线12上方的黑矩阵22以对狭缝状开口141进行遮光,从而解决现有的像素结构中由于数据线与DBS电极始终保持重合,导致数据线的寄生电容较大的问题。本实施例通过模拟设计,相对于现有技术,在单个像素中数据线的寄生电容能够降低30%,有利于DBS电极在高频率、大尺寸显示面板中的应用。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种液晶显示面板进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。
Claims (18)
- 一种液晶显示面板,其包括:彩膜基板;阵列基板,与所述彩膜基板相对设置,所述阵列基板包括多条数据线和多个设置于所述数据线上方的DBS电极;液晶层,夹设于所述彩膜基板与所述阵列基板之间;其中,所述DBS电极包括至少一个间隔设置的狭缝状开口;所述彩膜基板朝向所述阵列基板的一侧设置有黑矩阵,所述黑矩阵覆盖与其对应的所述狭缝状开口;所述阵列基板上还设置有像素电极,所述DBS电极与所述像素电极同层设置。
- 根据权利要求1所述的液晶显示面板,其中,所述黑矩阵的宽度大于或等于所述数据线的宽度。
- 根据权利要求1所述的液晶显示面板,其中,至少一个所述狭缝状开口在所述数据线上的正投影位于所述数据线的延伸方向的中心线上。
- 根据权利要求1所述的液晶显示面板,其中,所述狭缝状开口为矩形。
- 根据权利要求4所述的液晶显示面板,其中,所述狭缝状开口的长度范围为5微米至20微米,所述狭缝状开口的宽度范围为2.5微米至所述数据线宽度的三分之一。
- 根据权利要求1所述的液晶显示面板,其中,所述DBS电极的宽度大于所述数据线的宽度。
- 根据权利要求1所述的液晶显示面板,其中,相邻的所述DBS电极通过桥接线连接,所述DBS电极与所述桥接线同层设置。
- 根据权利要求7所述的液晶显示面板,其中,所述彩膜基板还包括公共电极,所述公共电极与所述DBS电极电位相同。
- 一种液晶显示面板,其包括:彩膜基板;阵列基板,与所述彩膜基板相对设置,所述阵列基板包括多条数据线和多个设置于所述数据线上方的DBS电极;液晶层,夹设于所述彩膜基板与所述阵列基板之间;其中,所述DBS电极包括至少一个间隔设置的狭缝状开口。
- 根据权利要求9所述的液晶显示面板,其中,所述彩膜基板朝向所述阵列基板的一侧设置有黑矩阵,所述黑矩阵覆盖与其对应的所述狭缝状开口。
- 根据权利要求10所述的液晶显示面板,其中,所述黑矩阵的宽度大于或等于所述数据线的宽度。
- 根据权利要求10所述的液晶显示面板,其中,至少一个所述狭缝状开口在所述数据线上的正投影位于所述数据线的延伸方向的中心线上。
- 根据权利要求9所述的液晶显示面板,其中,所述狭缝状开口为矩形。
- 根据权利要求13所述的液晶显示面板,其中,所述狭缝状开口的长度范围为5微米至20微米,所述狭缝状开口的宽度范围为2.5微米至所述数据线宽度的三分之一。
- 根据权利要求9所述的液晶显示面板,其中,所述DBS电极的宽度大于所述数据线的宽度。
- 根据权利要求9所述的液晶显示面板,其中,所述阵列基板上还设置有像素电极,所述DBS电极与所述像素电极同层设置。
- 根据权利要求9所述的液晶显示面板,其中,相邻的所述DBS电极通过桥接线连接,所述DBS电极与所述桥接线同层设置。
- 根据权利要求17所述的液晶显示面板,其中,所述彩膜基板还包括公共电极,所述公共电极与所述DBS电极电位相同。
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- 2020-03-09 CN CN202010157805.2A patent/CN111308801A/zh active Pending
- 2020-04-21 WO PCT/CN2020/085931 patent/WO2021179403A1/zh active Application Filing
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CN111308801A (zh) | 2020-06-19 |
US11852936B2 (en) | 2023-12-26 |
US20230161206A1 (en) | 2023-05-25 |
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