WO2021170119A1 - 介质滤波器和通信设备 - Google Patents

介质滤波器和通信设备 Download PDF

Info

Publication number
WO2021170119A1
WO2021170119A1 PCT/CN2021/078282 CN2021078282W WO2021170119A1 WO 2021170119 A1 WO2021170119 A1 WO 2021170119A1 CN 2021078282 W CN2021078282 W CN 2021078282W WO 2021170119 A1 WO2021170119 A1 WO 2021170119A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal layer
hole
dielectric block
dielectric
wall
Prior art date
Application number
PCT/CN2021/078282
Other languages
English (en)
French (fr)
Inventor
邹孟
石晶
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to EP21761320.7A priority Critical patent/EP4096013B1/en
Publication of WO2021170119A1 publication Critical patent/WO2021170119A1/zh
Priority to US17/895,670 priority patent/US20220416384A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
    • H01P1/2053—Comb or interdigital filters; Cascaded coaxial cavities the coaxial cavity resonators being disposed parall to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2002—Dielectric waveguide filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
    • H01P1/2056—Comb filters or interdigital filters with metallised resonator holes in a dielectric block
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/007—Manufacturing frequency-selective devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor

Definitions

  • the embodiments of the present application relate to the technical field of wireless communication devices, and in particular, to a dielectric filter and a communication device.
  • the current communication system has higher and higher requirements for the filter volume.
  • the transverse electromagnetic mode (TEM) dielectric filter has the advantages of small size, low loss, and low cost, the TEM medium
  • the application of filters in communication systems is becoming more and more widespread.
  • FIG. 1 is a schematic diagram of the structure of a TEM dielectric filter.
  • the TEM dielectric filter includes a dielectric body 01.
  • the dielectric body 01 is provided with a metalized through hole 02, and the surface of the dielectric body 01 is provided with a metalization connected to the through hole 02. pattern.
  • the capacitive coupling structure 03 used in the TEM dielectric filter is as shown in FIG.
  • the power capacity of the TEM dielectric filter using the coupling structure in FIG. 2 is small.
  • the distance between the stub and the metal layer on the surface of the resonator is very small, and it is easy to break down and spark at high power.
  • the TEM dielectric filter is not easy to implement cross-coupling.
  • Using cross-coupling to introduce transmission zeros is a common method for enhancing the out-of-band suppression performance in filter design.
  • the stub-type capacitive coupling structure is very It is difficult to apply to filter cross-coupling design.
  • FIG. 3 is a schematic diagram of another TEM dielectric filter structure.
  • Fig. 4 is a schematic structural diagram of the coupling structure in Fig. 3.
  • the TEM dielectric filter includes a dielectric body 01, a metal housing 04 is provided on the outside of the dielectric body 01, and two metalized blind holes 06 are provided in the dielectric body 01.
  • the metalized blind holes 06 and the surrounding dielectric body 01 form a resonant unit.
  • a coupling hole 05 is provided between the two metalized blind holes 06.
  • the coupling hole 05 is a metalized blind hole, and a capacitance gap effect is formed between the coupling hole 05 and the housing 04, which can greatly reduce the frequency of the resonant through hole.
  • the depth of the coupling hole 05 is greater than the depth of the blind hole 06 in the resonance unit, and the capacitive coupling is realized by the principle of polarity inversion.
  • the TEM dielectric filter with the coupling structure in Figure 4 is prone to introduce low-end harmonics.
  • the coupling structure will produce a resonant frequency lower than the operating frequency, which will lead to deterioration of the low-end out-of-band suppression performance of the filter.
  • the TEM dielectric filter it is difficult for the TEM dielectric filter to achieve weak capacitive coupling.
  • the depth of the blind coupling hole needs to be much greater than the depth of the blind resonator hole. At this time, the distance between the top of the coupling blind hole and the bottom surface of the dielectric will be very small, which will increase processing difficulty and bring reliability risks.
  • the performance of the above-mentioned TEM dielectric filter is poor. Therefore, it is necessary to reduce the size of the dielectric filter while ensuring the RF performance of the filter.
  • the embodiments of the present application provide a dielectric filter and a communication device, which realize the miniaturization of the dielectric filter and improve the radio frequency performance of the dielectric filter.
  • a dielectric filter including: a first dielectric block and a second dielectric block that are stacked, wherein the first dielectric block and the second dielectric block respectively include opposite The first surface and the second surface, the first surface of the first dielectric block and the second surface of the second dielectric block are opposite; the first blind hole with the opening located on the first surface of the first dielectric block, The first through hole, and two or more resonant through holes; the second through hole whose opening is located on the second surface of the second dielectric block; the inner wall of the first blind hole and the inner wall of the first through hole , The inner wall of the second through hole, the first surface of the first dielectric block, and the second surface of the second dielectric block are provided with a metal layer; the metal layer on the first surface of the first dielectric block It is arranged opposite to the metal layer on the second surface of the second dielectric block, and the metal layer on the first surface of the first dielectric block is connected to the metal layer on the second
  • the metal layer on the inner wall of the second through hole is connected with the metal layer on the second surface of the second dielectric block. Therefore, when the dielectric filter is working, the electromagnetic wave of the quasi-TEM mode in the resonant through hole generates an induced current on the first through hole, and the induced current moves from the first blind hole to the second through hole to form a loop. The induced current on the surface of the first blind hole will excite the electromagnetic wave of the quasi-TEM mode in the second resonant through hole, so as to realize the capacitive coupling of electromagnetic energy.
  • the dielectric filter adopts a stacked dielectric block structure and has a smaller volume, which is beneficial to the miniaturization of the dielectric filter.
  • a coupling structure is provided in the dielectric block to realize the capacitive coupling between the resonant vias.
  • the dielectric filter adopting this coupling structure The electromagnetic leakage is small, the power capacity is greatly improved, and it will not cause the deterioration of the low-end out-of-band suppression performance of the filter.
  • the material of the metal layer is silver. As a result, the conductivity of the metal layer is improved, and the radio frequency performance of the filter is improved.
  • the metal layer is formed by electroplating, electroless plating, sputtering or ion plating process. As a result, the connection between the metal layer and the dielectric block is more stable.
  • the metal layer on the first surface of the first dielectric block includes: a first metal layer located around the first blind hole, and a third metal layer located around the resonant via hole.
  • a metal layer, the metal layer on the inner wall of the first through hole and the metal layer on the inner wall of the first blind hole are connected to the first metal layer, and the third metal layer is separated from the first metal layer.
  • the metal layer on the second surface of the second dielectric block includes: a second metal layer located around the second through hole, and a second metal layer opposite to the third metal layer Four metal layers, the second metal layer is connected to the first metal layer, and the metal layer on the inner wall of the second through hole is connected to the second metal layer, and the fourth metal layer is connected to the second metal layer.
  • the metal layer is separated. Therefore, by providing the second metal layer and the fourth metal layer, the area of the metal layer between the first dielectric block and the second dielectric block is increased, so that the connection is more stable and the capacitive coupling effect is better. Separating the fourth metal layer from the second metal layer can avoid short circuits between the resonant via holes or between the resonant via holes and the coupling structure.
  • each resonant through hole forms a resonant unit with the surrounding body, and the position of the first blind hole is connected to the two resonant units. Therefore, the first blind hole is a coupling hole, and the coupling hole is used for coupling between adjacent resonant units, or cross coupling between non-adjacent resonant units.
  • the coupling amount between the resonant vias can be changed by changing the size and position of the coupling hole, so that the coupling amount between two adjacent or non-adjacent resonant vias can be increased without changing the volume of the dielectric filter. .
  • the capacitive coupling between the two resonant units can be enhanced.
  • the projections of the first through hole and the second through hole on the first surface of the first dielectric block are both located in the first blind hole. Therefore, the coupling amount between the resonance through holes can be changed by changing the distance between the first through hole and the second through hole, so that the two adjacent resonance channels can be increased without changing the volume of the dielectric filter. The amount of coupling between the holes. The capacitive coupling between the two resonant units can be enhanced.
  • the first dielectric block and the second dielectric block are made of ceramic materials. Therefore, the size of the resonant unit is inversely proportional to the square root of the relative dielectric constant of the electromagnetic wave transmission medium.
  • the relative dielectric constant of ceramics is relatively large. Using ceramics as the transmission medium can reduce the size of the resonant unit, which is beneficial to the small size of the dielectric filter. change.
  • the depth of the first through hole is greater than the depth of the second through hole.
  • the depth of the first through hole is equal to the thickness of the first dielectric block
  • the depth of the second through hole is equal to the thickness of the second dielectric block.
  • the outer surfaces of the first dielectric block and the second dielectric block are provided with the metal layer.
  • the metal layer can effectively shield the signal, prevent signal energy leakage and external signal interference, thereby improving the noise floor suppression capability. Therefore, the dielectric filter of the present application can prevent signal leakage and can achieve the purpose of miniaturization of the filter.
  • a communication device including the above-mentioned dielectric filter. Therefore, the communication device adopts the above-mentioned dielectric filter with a smaller size, which is beneficial to integrate more signal channels and improve the spectrum utilization rate, so that the communication device can transmit data services at a higher rate under a limited wireless frequency band.
  • FIG. 1 is a schematic diagram of the structure of a TEM dielectric filter provided by the prior art
  • Fig. 2 is a schematic structural diagram of the coupling structure in Fig. 1;
  • FIG. 3 is a schematic structural diagram of another TEM dielectric filter provided in the prior art
  • Fig. 4 is a schematic structural diagram of the coupling structure in Fig. 3;
  • FIG. 5 is a schematic structural diagram of a dielectric filter provided by an embodiment of the application.
  • FIG. 6 is a schematic diagram of the structure of the first dielectric block in FIG. 5;
  • FIG. 7 is a top view of the first dielectric block in FIG. 6;
  • FIG. 8 is a schematic diagram of the structure of the second dielectric block in FIG. 5;
  • Figure 9 is a bottom view of the second dielectric block in Figure 8.
  • FIG. 10 is a schematic structural diagram of the coupling structure in FIG. 5;
  • Figure 11 is a schematic structural diagram of another dielectric filter
  • FIG. 12 is a top view of the dielectric filter in FIG. 11;
  • Figure 13 is a schematic structural diagram of another dielectric filter
  • FIG. 14 is a top view of the dielectric filter in FIG. 13;
  • Figure 15 is a top view of another dielectric filter
  • FIG. 16 is a simulation curve diagram of a dielectric filter provided by an embodiment of the application.
  • Fig. 17 is a partial enlarged view of the simulation curve in Fig. 16.
  • Transverse Electromagnetic Mode (TEM) mode A waveguide mode without electric and magnetic field components in the transmission direction of electromagnetic waves. This is an ideal state, in fact it is generally a quasi-TEM mode. That is, the electric and magnetic field components in the transmission direction of electromagnetic waves are much smaller than the components in the direction perpendicular to the transmission direction.
  • TEM Transverse Electromagnetic Mode
  • Dielectric filter It is a filter designed and manufactured using the characteristics of low loss, high dielectric constant, frequency temperature coefficient and thermal expansion coefficient of dielectric materials (for example, ceramics), and can withstand high power. It can be made by several long resonators in the longitudinal direction. Multi-stage series or parallel ladder circuit.
  • the existing dielectric filter resonates by forming a resonant through hole by processing a blind hole on the dielectric body.
  • the depth of the blind hole is highly controllable, the frequency fluctuates greatly, and the consistency is poor; in addition, the negative coupling structure of the existing dielectric filter is difficult to achieve, and the negative coupling The structure is single and not suitable for mass production.
  • FIG. 5 is a schematic structural diagram of a dielectric filter provided by an embodiment of the application.
  • FIG. 6 is a schematic diagram of the structure of the first dielectric block in FIG. 5.
  • Fig. 7 is a top view of the first dielectric block in Fig. 6.
  • FIG. 8 is a schematic diagram of the structure of the second dielectric block in FIG. 5.
  • Fig. 9 is a bottom view of the second dielectric block in Fig. 8.
  • FIG. 10 is a schematic structural diagram of the coupling structure in FIG. 5.
  • the dielectric filter includes: a first dielectric block 100 and a second dielectric block 200 that are stacked.
  • first dielectric block 100 and the second dielectric block 200 respectively include a first surface and a second surface opposite to each other.
  • the first surface of the first dielectric block 100 and the second surface of the second dielectric block 200 The two surfaces are opposite.
  • first dielectric block 100 and the second dielectric block 200 are made of ceramic materials, for example.
  • the first dielectric block 100 is provided with resonance through holes 101, and the number of resonance through holes 101 is 2 or more.
  • Each resonance through hole 101 forms a resonance unit with the surrounding body, and the first resonance through hole A first resonance unit is formed with the surrounding body, and the second resonance through hole and the surrounding body form a second resonance unit.
  • the coupling structure includes: a first blind hole 104 and a first through hole 103 arranged in the first dielectric block 100, and a second through hole 201 arranged in the second dielectric block.
  • the opening of the first blind hole 104 and an opening of the first through hole 103 are, for example, located on the first surface of the first dielectric block 100.
  • the second dielectric block 200 is provided with a second through hole 201, and an opening of the second through hole 201 is located on the second surface of the second dielectric block 200. As shown in FIG.
  • the inner wall of the first blind hole 104, the inner wall of the first through hole 103, the inner wall of the second through hole 201, the first surface of the first dielectric block 100, and the inner wall of the second dielectric block 200 The second surface is provided with a metal layer.
  • the metal layer on the inner wall of the first through hole 103 and the metal layer on the inner wall of the first blind hole 104 are connected to the metal layer on the first surface of the first dielectric block 100, and the metal on the inner wall of the second through hole 201 The layer is connected to the metal layer on the second surface of the second dielectric block 200.
  • the metal layer on the first surface of the first dielectric block 100 is connected to the metal layer on the second surface of the second dielectric block 200, and combined to form a closed capacitive coupling structure, the electromagnetic leakage is small and the power is low. High capacity.
  • the quasi-TEM mode electromagnetic wave in the first resonant through hole When the dielectric filter is working, the quasi-TEM mode electromagnetic wave in the first resonant through hole generates an induced current on the first through hole 103, and the induced current moves from the first blind hole 104 to the second through hole 201 to form a loop.
  • the induced current on the surface of the first blind hole 104 will excite the electromagnetic wave of the quasi-TEM mode in the second resonant through hole, so as to realize the capacitive coupling of electromagnetic energy.
  • the dielectric filter provided by the embodiment of the present application adopts a stacked dielectric block structure, and has a smaller volume, which is beneficial to the miniaturization of the dielectric filter.
  • a coupling structure is set in the dielectric block to realize the capacitive coupling between the resonant through holes.
  • the dielectric filter adopting this coupling structure has electromagnetic The leakage is small, the power capacity is greatly improved, and the low-end out-of-band suppression performance of the filter will not deteriorate.
  • the embodiment of the present application does not limit the material of the metal layer.
  • the inner wall of the first blind hole 104, the inner wall of the first through hole 103, the inner wall of the second through hole 201, the first surface of the first dielectric block 100, and the The material of the metal layer on the second surface of the second dielectric block 200 is, for example, silver.
  • the metal layer can be formed on the inner wall of the first blind hole 104 and the first blind hole 104 by electroplating, electroless plating, sputtering or ion plating.
  • the inner wall of the through hole 103, the inner wall of the second through hole 201, the first surface of the first dielectric block 100, and the second surface of the second dielectric block 200 On the inner wall of the through hole 103, the inner wall of the second through hole 201, the first surface of the first dielectric block 100, and the second surface of the second dielectric block 200.
  • the embodiment of the present application does not limit the range of the metal layer on the first surface of the first dielectric block 100 and the second surface of the second dielectric block 200.
  • the metal layer on the first surface of the first dielectric block 100 includes: a metal layer disposed on the first blind hole 104 on the first surface of the first dielectric block 100 The first metal layer 1041 around the opening.
  • the first metal layer 1041 is arranged around the first blind hole 104, and the metal layer on the inner wall of the first blind hole 104 and the metal layer on the inner wall of the first through hole 103 are connected to the first metal layer 1041.
  • the metal layer on the second surface of the second dielectric block 200 includes a second metal layer 2011 located around the second through hole 201 and opposite to the first metal layer 1041.
  • the second metal layer 2011 is opposite to the first metal layer 1041, and the second metal layer 2011 covers the first blind hole 104 and the first metal layer 1041.
  • the metal layer on the inner wall of the two through holes 201 is connected to the second metal layer 2011.
  • the metal layer on the first surface of the first dielectric block 100 further includes: a third metal layer 1011 disposed around the opening of the resonant via 101 on the first surface of the first dielectric layer.
  • the three metal layers 1011 are separated from the first metal layer 1041.
  • the third metal layer 1011 is arranged around the opening of the resonant via 101 on the first surface of the first dielectric block 100.
  • the inner wall of the resonance through hole 101 is covered with the metal layer, and the metal layer on the inner wall of the resonance through hole 101 is connected to the third metal layer 1011.
  • the position of the first blind hole 104 is connected to the two resonant units, and the third metal layer 1011 is separated from the first metal layer 1041, so as to avoid the resonant via 101 or between the resonant via 101 and the resonant via 101.
  • the coupling structure 300 is short-circuited.
  • the metal layer on the second surface of the second dielectric block 200 further includes a fourth metal layer 202.
  • the fourth metal layer 202 and the third metal layer 1011 are disposed opposite to each other.
  • the shape and size of the third metal layer 1011 are the same, and the third metal layer 1011 and the fourth metal layer 202 are connected.
  • the position of the first blind hole 104 is connected to the two resonant units, and the fourth metal layer 202 is separated from the second metal layer 2011, so as to avoid the resonant vias 101 or between the resonant vias 101 and The coupling structure 300 is short-circuited.
  • the shapes of the first blind hole 104, the first through hole 103, and the second through hole 201 are not limited. As shown in FIG. 5 and FIG. 10, the first blind hole 104, the first through hole 103, and the second through hole 201 in the coupling structure 300 can be arranged in parallel with the resonance through hole 101, thereby facilitating the coupling structure 300 and the resonance through hole. The coupling between 101. And the cross-sectional shapes of the first blind hole 104, the first through hole 103, and the second through hole 201 can have multiple choices.
  • the first blind hole 104, the first through hole 103, and the second through hole 201 can be round holes. , Can also be flat holes, oval holes, etc.
  • the shape and size of the first blind hole 104, the first through hole 103, and the second through hole 201 can be set according to actual needs.
  • the projections of the first through hole 103 and the second through hole 201 on the first surface of the first dielectric block 100 are located in the first blind hole 104, and are connected to the first through hole 104.
  • the inner side of a blind hole 104 is tangent.
  • the metal layer on the inner wall of the first blind hole 104 and the metal layer on the inner wall of the first through hole 103 can be connected to the first metal layer 1041 around the first blind hole 104, and the metal layer on the inner wall of the second through hole 201 can be connected. Connect with the second metal layer 2011.
  • the first through hole 103 is located in the first blind hole 104, the opening of the second through hole 201 on the second surface of the second dielectric block and the first blind hole 104 The openings overlap.
  • the opening of the first blind hole 104 on the first surface of the first dielectric block is a long strip structure, and the first through hole 103 and the second through hole 201 extend along the first blind hole.
  • the length of the hole 104 is arranged, and the projections of the first through hole 103 and the second through hole 201 on the first surface of the first dielectric block are respectively located at both ends of the inside of the first blind hole 104, and the first through hole 104
  • the diameters of a through hole 103 and the second through hole 201 are the same as the width of the first blind hole 104, and the length of the first blind hole 104 is greater than or equal to the first through hole 103 and the second The sum of the diameters of the through holes 201.
  • the distance between the first through hole 103 and the two through holes and the depth of the first blind hole 104 can be changed to achieve different coupling amounts.
  • the distance between the first through hole 103 and the two through holes and the depth of the first blind hole 104 can be set according to the actual coupling amount required. Therefore, the first blind hole is a coupling hole, and the coupling hole is used for coupling between adjacent resonant units, or cross coupling between non-adjacent resonant units.
  • the coupling amount between the resonant vias can be changed by changing the size and position of the coupling hole, so that the coupling between two adjacent or non-adjacent resonant vias can be increased without changing the volume of the dielectric filter.
  • the capacitive coupling between the two resonant units can be enhanced.
  • the amount of coupling between the resonant vias can be changed by changing the distance between the first via and the second via, so that the gap between two adjacent resonant vias can be increased without changing the volume of the dielectric filter.
  • the amount of coupling between the two resonant units can enhance the capacitive coupling between the two resonant units.
  • the thickness of the first dielectric block 100 is greater than the thickness of the second dielectric block 200.
  • the thickness size of the second dielectric block 100 is reduced, which can improve the resonance performance between the resonance through holes 101, and the size of the resonance through holes 101 can be reduced correspondingly, which is beneficial to the miniaturization of the dielectric filter.
  • the outer surfaces of the first dielectric block 100 and the second dielectric block 200 are provided with the metal layer. Therefore, the metal layer can effectively shield the signal, prevent signal energy leakage and external signal interference, thereby improving the noise floor suppression capability. Therefore, the dielectric filter of the present application can prevent signal leakage and can achieve the purpose of miniaturization of the filter.
  • the aforementioned coupling structure 300 may be used in a cross-coupling structure.
  • the coupling structure 300 may be arranged in a cascaded triplet (CT) type cross-coupling structure.
  • CT cascaded triplet
  • the coupling structure 300 may be arranged in a Cascaded Quadruplet (CQ) type or BOX type cross-coupling structure.
  • the coupling structure 300 can also be used in a cross-coupling structure of CT type and Box type combination.
  • the dielectric filter shown in FIG. 15 includes 8 resonance through holes, the 4 resonance through holes on the left are arranged in a CT type, and the 4 resonance through holes on the right are arranged in a Box type.
  • the CT-type array of resonant vias are provided with one coupling structure 300 between the lower left corner and the upper right corner
  • the BOX-type array of resonant vias are provided with one coupling structure between the lower left corner and the lower right corner. 300.
  • the coupling structure 300 can be used to adjust the coupling amount and resonance frequency.
  • the coupling structure 300 is used in a cross-coupling structure of CT type and Box type combination, and two transmission zero points can be realized.
  • line 1 is the graph of reflection coefficient changing with frequency
  • line 2 is the graph of insertion loss changing with frequency.
  • the dielectric filter provided in the embodiment of this application uses cross-coupling to introduce two low-end transmission zero points, which effectively enhances The ability of the dielectric filter to suppress out-of-band signals is improved.
  • the coupling structure 300 can achieve strong capacitive coupling as well as weak capacitive coupling, and is suitable for commonly used cross-coupling structures such as CT and CQ.
  • the present application also provides a communication device, which includes the dielectric filter disclosed in the embodiment of the present invention.
  • the communication device provided in the embodiment of the present application adopts the dielectric filter disclosed in the embodiment of the present invention, so that the overall volume of the communication device can be smaller.
  • the communication device may be a transceiver, a base station, a microwave communication device, a WiFi communication device, etc., and may also be various types of terminal devices.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

本申请实施例公开了一种介质滤波器和通信设备，该介质滤波器包括：层叠设置的第一介质块和第二介质块，其中，该第一介质块的第一表面和该第二介质块的第二表面相对；开口位于该第一介质块的第一表面上的第一盲孔、第一通孔，以及2个或2个以上谐振通孔；开口位于该第二介质块的第二表面上的第二通孔；该第一介质块的第一表面上的金属层与该第二介质块的第二表面上的金属层相连接，该第一通孔内壁的金属层与该第一介质块第一表面上的金属层连接，该第一盲孔内壁的金属层与该第一介质块第一表面上的金属层连接，该第二通孔内壁的金属层与该第二介质块的第二表面上的金属层连接。该介质滤波器，在小型化的同时，保证了滤波器的射频性能。

Description

介质滤波器和通信设备
“本申请要求于2020年02月28日提交国家知识产权局、申请号为202010131057.0、发明名称为“介质滤波器和通信设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中”。
技术领域
本申请实施例涉及无线通信设备技术领域，尤其涉及一种介质滤波器和通信设备。
背景技术
随着无线通信技术的发展，当前通信系统对滤波器体积要求越来越高，由于横电磁模(transverse electromagnetic mode，TEM)介质滤波器具有体积小、低损耗、低成本等优点，因此TEM介质滤波器在通信系统中的应用越来越广泛。
图1为一种TEM介质滤波器的结构示意图，该TEM介质滤波器包括介质本体01，介质本体01中设置有金属化通孔02，介质本体01表面设有与通孔02相连接的金属化图案。TEM介质滤波器中使用的容性耦合结构03如图2所示，通过介质本体01上表面的金属短截线来实现不同谐振单元之间的容性耦合。
其中，采用图2中耦合结构的TEM介质滤波器功率容量小。短截线与谐振器表面金属层之间的间距很小，大功率时容易击穿打火。
并且该TEM介质滤波器不容易实施交叉耦合，利用交叉耦合来引入传输零点是目前滤波器设计中增强带外抑制性能的惯用手段，但由于其结构形状的限制，短截线型电容耦合结构很难应用于滤波器交叉耦合设计当中。
图3为另一种TEM介质滤波器的结构示意图。图4为图3中耦合结构的结构示意图。如图3、图4所示，该TEM介质滤波器包括介质本体01，介质本体01外侧设有金属材质的外壳04，介质本体01中设置有2个金属化盲孔06，该金属化盲孔06和周围介质本体01组成谐振单元。且2个金属化盲孔06之间设有耦合孔05。其中，该耦合孔05为金属化盲孔，该耦合孔05与外壳04间形成电容缝隙效应，能够大幅度减低谐振通孔频率。如图4所示，耦合孔05的深度大于谐振单元中盲孔06的深度，通过极性反转的原理来实现电容性耦合。
然而，图4中耦合结构的TEM介质滤波器容易引入低端谐波。该耦合结构会产生一个低于工作频率的谐振频率，会导致滤波器低端带外抑制性能恶化。
并且该TEM介质滤波器难实现弱电容耦合。如需实现较弱的电容耦合，耦合盲孔的深度需要远大于谐振器盲孔深度，此时耦合盲孔顶部和介质底面的间距会很小，会增加加工难度、带来可靠性风险。
上述TEM介质滤波器的性能较差。因此，有必要在减小介质滤波器的尺寸的同时，保证滤波器的射频性能。
发明内容
本申请实施例提供一种介质滤波器和通信设备，实现介质滤波器小型化的同时提高了介质滤波器的射频性能。
为达到上述目的，本申请实施例采用如下技术方案：
本申请实施例的第一方面，提供一种介质滤波器，包括：层叠设置的第一介质块和第二介质块，其中，所述第一介质块和所述第二介质块分别包括相对的第一表面和第二表面，所述第一介质块的第一表面和所述第二介质块的第二表面相对；开口位于所述第一介质块的第一表面上的第一盲孔、第一通孔，以及2个或2个以上谐振通孔；开口位于所述第二介质块的第二表面上的第二通孔；所述第一盲孔内壁、所述第一通孔内壁、所述第二通孔内壁、所述第一介质块的第一表面、以及所述第二介质块的第二表面设有金属层；所述第一介质块的第一表面上的金属层与所述第二介质块的第二表面上的金属层相对设置，且所述第一介质块的第一表面上的金属层与所述第二介质块的第二表面上的金属层相连接，所述第一通孔内壁的金属层与所述第一介质块第一表面上的金属层连接，所述第一盲孔内壁的金属层与所述第一介质块第一表面上的金属层连接，所述第二通孔内壁的金属层与所述第二介质块的第二表面上的金属层连接。由此，该介质滤波器工作时，谐振通孔中的准TEM模的电磁波在第一通孔上产生感应电流，该感应电流由第一盲孔运动到第二通孔形成回路。第一盲孔表面的感应电流会激励第二谐振通孔中产生准TEM模的电磁波，从而实现电磁能量的容性耦合。该介质滤波器，采用层叠设置的介质块结构，体积更小，有利于介质滤波器的小型化。同时，在介质块中设置耦合结构，实现了谐振通孔之间的电容耦合，采用该耦合结构的介质滤波器与现有技术中准TEM模介质滤波器所使用的短截线方式相比，电磁泄露小，功率容量有较大提升，且不会造成滤波器低端带外抑制性能的恶化。
一种可选的实现方式中，所述金属层的材质为银。由此，提高了金属层的导电性，提高了滤波器的射频性能。
一种可选的实现方式中，所述金属层采用采用电镀、化学镀、溅射或离子镀工艺成型。由此，使得金属层与介质块的连接更稳定。
一种可选的实现方式中，所述第一介质块的第一表面上的金属层包括：位于所述第一盲孔周围的第一金属层，以及位于所述谐振通孔周围的第三金属层，所述第一通孔内壁的金属层、以及所述第一盲孔内壁的金属层与所述第一金属层连接，所述第三金属层与所述第一金属层分离。由此，通过设置第一金属层和第三金属层，增大了第一介质块和第二介质块之间的金属层面积，使得连接更稳定，将第一金属层与所述第三金属层分离设置，可以避免谐振通孔之间或谐振通孔和耦合结构之间短路。
一种可选的实现方式中，所述第二介质块的第二表面上的金属层包括：位于所述第二通孔周围的第二金属层，以及与所述第三金属层相对的第四金属层，所述第二金属层与所述第一金属层连接，且所述第二通孔内壁的金属层与所述第二金属层连接，所述第四金属层与所述第二金属层分离。由此，通过设置第二金属层和第四金属层，增大了第一介质块和第二介质块之间的金属层面积，使得连接更稳定，且电容耦合效果更好。将第四金属层与所述第二金属层分离设置，可以避免谐振通孔之间或谐振通孔和耦合结构之间短路。
一种可选的实现方式中，所述每个谐振通孔与周围本体形成谐振单元，所述第一盲孔所处的位置与两个谐振单元相接。由此，所述第一盲孔为耦合孔，所述耦合孔用于相邻谐振单元之间的耦合，或不相邻的谐振单元之间交叉耦合。可以通过改变耦合孔的尺寸和位置改变谐振通孔之间的耦合量，从而可在不改变介质滤波器体积的前提 下，增大相邻或不相邻两个谐振通孔之间的耦合量。可增强该两个谐振单元之间的容性耦合。
一种可选的实现方式中，所述第一通孔和所述第二通孔在所述第一介质块的第一表面上的投影均位于所述第一盲孔内。由此，可以通过改变第一通孔和第二通孔之间的距离改变谐振通孔之间的耦合量，从而可在不改变介质滤波器体积的前提下，增大相邻两个谐振通孔之间的耦合量。可增强该两个谐振单元之间的容性耦合。
一种可选的实现方式中，所述第一介质块和所述第二介质块采用陶瓷材料制成。由此，谐振单元的尺寸和电磁波传输媒介的相对介电常数的平方根成反比，陶瓷的相对介电常数较大，采用陶瓷作为传输媒介，可以缩小谐振单元的体积，有利于介质滤波器的小型化。
一种可选的实现方式中，所述第一通孔的深度大于所述第二通孔的深度。第一通孔的深度等于第一介质块的厚度，第二通孔的深度等于该第二介质块的厚度。其中，所述第二介质块的厚度越小，谐振通孔之间的谐振效果越好。通过减小第二介质块的厚度，在提升介质滤波器谐振性能的同时，有利于介质滤波器的小型化。
一种可选的实现方式中，所述第一介质块和所述第二介质块的外表面设有所述金属层。由此，金属层可以对信号形成有效地屏蔽，防止信号能量泄露以及外部信号的干扰，从而提高了底噪抑制能力。由此，本申请介质滤波器可以防止信号泄露和能够实现滤波器小型化的目的。
本申请实施例的第二方面，提供一种通信设备，包括如上所述的介质滤波器。由此，该通信设备采用上述介质滤波器，尺寸更小，有利于集成更多信号通道数，提高频谱利用率，使得通信设备能在有限的无线频带下传输更高速率的数据业务。
附图说明
图1为现有技术提供的一种TEM介质滤波器的结构示意图；
图2为图1中耦合结构的结构示意图；
图3为现有技术提供的另一种TEM介质滤波器的结构示意图；
图4为图3中耦合结构的结构示意图；
图5为本申请实施例提供的介质滤波器的结构示意图；
图6为图5中第一介质块的结构示意图；
图7为图6中第一介质块的俯视图；
图8为图5中第二介质块的结构示意图；
图9为图8中第二介质块的仰视图；
图10为图5中耦合结构的结构示意图；
图11为另一种介质滤波器的结构示意图；
图12为图11中介质滤波器的俯视图；
图13为另一种介质滤波器的结构示意图；
图14为图13中介质滤波器的俯视图；
图15为另一种介质滤波器的俯视图；
图16为本申请实施例提供的介质滤波器的仿真曲线图；
图17为图16中仿真曲线图的局部放大图。
具体实施方式
为了使本申请的目的、技术方案和优点更加清楚，下面将结合附图对本申请作进一步地详细描述。
以下，术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。
此外，本申请中，“上”、“下”等方位术语是相对于附图中的部件示意置放的方位来定义的，应当理解到，这些方向性术语是相对的概念，它们用于相对于的描述和澄清，其可以根据附图中部件所放置的方位的变化而相应地发生变化。
名词解释：
横电磁波(Transverse Electromagnetic Mode，TEM)模式：电磁波的传输方向上没有电场和磁场分量的一种波导模式。这是一个理想状态，实际上一般是准TEM模。即，电磁波的传输方向上的电场和磁场分量要远远小于与传输方向垂直的方向上的分量。
介质滤波器：是利用介质(例如，陶瓷)材料的低损耗、高介电常数、频率温度系数和热膨胀系数小、可承受高功率等特点设计制作的滤波器，可由数个长型谐振器纵向多级串联或并联的梯形线路构成。
现有介质滤波器通过在介质体上加工盲孔形成谐振通孔进行谐振，盲孔深度可控性大，频率波动大，一致性差；此外，现有介质滤波器负耦合结构实现困难，负耦合结构单一，不适合大规模量产。
图5为本申请实施例提供的介质滤波器的结构示意图。图6为图5中第一介质块的结构示意图。图7为图6中第一介质块的俯视图。图8为图5中第二介质块的结构示意图。图9为图8中第二介质块的仰视图。图10为图5中耦合结构的结构示意图。如图5、图6、图7、图8、图9所示，该介质滤波器包括：层叠设置的第一介质块100和第二介质块200。
其中，所述第一介质块100和所述第二介质块200分别包括相对的第一表面和第二表面，所述第一介质块100的第一表面和所述第二介质块200的第二表面相对。
本申请实施例对该第一介质块100和第二介质块200的具体结构不做限制。其中，所述第一介质块100和所述第二介质块200例如均采用陶瓷材料制成。
第一介质块100上设有谐振通孔101，谐振通孔101的数量为2个或2个以上。在本申请一种实现方式中，谐振通孔101例如为2个，分别为第一谐振通孔和第二谐振通孔，每个谐振通孔101与周围本体形成谐振单元，第一谐振通孔与周围本体形成第一谐振单元，第二谐振通孔与周围本体形成第二谐振单元。
该耦合结构包括：设置在第一介质块100中的第一盲孔104和第一通孔103，以及设置在第二介质块中的第二通孔201。
其中，第一盲孔104的开口和第一通孔103的一个开口例如位于所述第一介质块100的第一表面上。
所述第二介质块200上设有第二通孔201，第二通孔201的一个开口位于所述第 二介质块200的第二表面上。
其中，所述第一盲孔104内壁、所述第一通孔103内壁、所述第二通孔201内壁、所述第一介质块100的第一表面、以及所述第二介质块200的第二表面设有金属层。
所述第一通孔103内壁的金属层、所述第一盲孔104内壁的金属层与所述第一介质块100第一表面上的金属层连接，所述第二通孔201内壁的金属层与所述第二介质块200的第二表面上的金属层连接。
所述第一介质块100的第一表面上的金属层与所述第二介质块200的第二表面上的金属层连接，组合在一起后形成封闭式容性耦合结构，电磁泄漏小、功率容量高。
该介质滤波器工作时，第一谐振通孔中的准TEM模的电磁波在第一通孔103上产生感应电流，该感应电流由第一盲孔104运动到第二通孔201形成回路。第一盲孔104表面的感应电流会激励第二谐振通孔中产生准TEM模的电磁波，从而实现电磁能量的容性耦合。
本申请实施例提供的介质滤波器，采用层叠设置的介质块结构，体积更小，有利于介质滤波器的小型化。同时，在介质块中设置耦合结构，实现了谐振通孔之间的电容耦合，采用该耦合结构的介质滤波器与图1中准TEM模介质滤波器所使用的短截线方式相比，电磁泄露小，功率容量有较大提升，且不会造成滤波器低端带外抑制性能的恶化。
本申请实施例对金属层的材质不做限制。在本申请一种实现方式中，所述第一盲孔104内壁、所述第一通孔103内壁、所述第二通孔201内壁、所述第一介质块100的第一表面、以及所述第二介质块200的第二表面的金属层的材质例如为银，该金属层可以通过电镀、化学镀、溅射或离子镀工艺成型在所述第一盲孔104内壁、所述第一通孔103内壁、所述第二通孔201内壁、所述第一介质块100的第一表面、以及所述第二介质块200的第二表面上。
本申请实施例对所述第一介质块100的第一表面和所述第二介质块200的第二表面上的金属层的范围不做限制。在本申请一种实现方式中，如图5所示，第一介质块100第一表面上的金属层包括：设置在第一盲孔104在所述第一介质块100的第一表面上的开口周围的第一金属层1041。
其中，第一金属层1041环绕第一盲孔104设置，所述第一盲孔104内壁的金属层、所述第一通孔103内壁的金属层与所述第一金属层1041连接。
接着参考图5，第二介质块200的第二表面上的金属层包括：位于所述第二通孔201周围，且与所述第一金属层1041相对设置的第二金属层2011。
在本申请一种实现方式中，所述第二金属层2011与所述第一金属层1041相对，且第二金属层2011覆盖所述第一盲孔104和第一金属层1041，所述第二通孔201内壁的金属层与所述第二金属层2011连接。
此外，接着参考图5，第一介质块100第一表面上的金属层还包括：设置在谐振通孔101在第一介质层第一表面上的开口周围的第三金属层1011，所述第三金属层1011与所述第一金属层1041分离设置。
其中，第三金属层1011环绕谐振通孔101在第一介质块100第一表面上的开口设置。所述谐振通孔101的内壁覆盖有所述金属层，所述谐振通孔101内壁的金属层与 第三金属层1011连接。
其中，所述第一盲孔104所处的位置与所述两个谐振单元相接，所述第三金属层1011和第一金属层1041分离，避免谐振通孔101之间或谐振通孔101和耦合结构300短路。
第二介质块200的第二表面上的金属层还包括：第四金属层202，所述第四金属层202与所述第三金属层1011相对设置，且所述第四金属层202与所述第三金属层1011的形状和尺寸相同，所述第三金属层1011和第四金属层202连接。
其中，所述第一盲孔104所处的位置与所述两个谐振单元相接，所述第四金属层202和第二金属层2011分离，避免谐振通孔101之间或谐振通孔101和耦合结构300短路。
本申请实施例对第一盲孔104、第一通孔103和第二通孔201的形状不做限制。如图5、图10所示，耦合结构300中的第一盲孔104、第一通孔103和第二通孔201可以与谐振通孔101平行设置，从而有利于耦合结构300与谐振通孔101之间的耦合。且第一盲孔104、第一通孔103和第二通孔201的截面形状可以有多种选择，例如，第一盲孔104、第一通孔103和第二通孔201可以为圆孔，还可以为扁孔，椭圆孔等。可根据实际需要来设定第一盲孔104、第一通孔103和第二通孔201的形状、尺寸。
在本申请一种实现方式中，如图5所示，第一通孔103和第二通孔201在第一介质块100的第一表面上的投影位于第一盲孔104内，且与第一盲孔104的内侧边相切。由此，可使得第一盲孔104内壁的金属层、第一通孔103内壁的金属层与第一盲孔104周围的第一金属层1041连接，并使得第二通孔201内壁的金属层与第二金属层2011连接。
接着参考图5，所述第一通孔103位于所述第一盲孔104中，所述第二通孔201的在第二介质块第二表面上的开口和所述第一盲孔104的开口部分重合。如图5所示，第一盲孔104在第一介质块的第一表面上的开口为长条形结构，所述第一通孔103和所述第二通孔201沿所述第一盲孔104的长度方向设置，且所述第一通孔103和所述第二通孔201在第一介质块第一表面上的投影分别位于第一盲孔104内部的两端，且所述第一通孔103和所述第二通孔201的直径与所述第一盲孔104的宽度相同，所述第一盲孔104的长度大于或等于所述第一通孔103和所述第二通孔201直径之和。
本申请实施例中，可以通过改变第一通孔103和二通孔之间的间距和第一盲孔104的深度，可以实现不同的耦合量大小。示例性的，第一通孔103和第二通孔201之间的间距越大，耦合量越大，第一盲孔104的深度越深，耦合量越大。可根据实际需要的耦合量来设定第一通孔103和二通孔之间的间距和第一盲孔104的深度。由此，所述第一盲孔为耦合孔，所述耦合孔用于相邻谐振单元之间的耦合，或不相邻的谐振单元之间交叉耦合。可以通过改变耦合孔的尺寸和位置改变谐振通孔之间的耦合量，从而可在不改变介质滤波器体积的前提下，提高相邻或不相邻两个谐振通孔之间的耦合量，可增强该两个谐振单元之间的容性耦合。同时，可以通过改变第一通孔和第二通孔之间的距离改变谐振通孔之间的耦合量，从而可在不改变介质滤波器体积的前提下，提高相邻两个谐振通孔之间的耦合量，可增强该两个谐振单元之间的容性耦合。
其中，所述第一介质块100的厚度大于所述第二介质块200的厚度。其中，第二 介质块100的厚度尺寸减小，可以提高谐振通孔101之间的谐振性能，可以相应减小谐振通孔101的尺寸，有利于介质滤波器的小型化。
在本申请另一种实现方式中，所述第一介质块100和所述第二介质块200的外表面设有所述金属层。因此，金属层可以对信号形成有效地屏蔽，防止信号能量泄露以及外部信号的干扰，从而提高了底噪抑制能力。由此，本申请介质滤波器可以防止信号泄露和能够实现滤波器小型化的目的。
上述耦合结构300可以用于交叉耦合结构中。在本申请一种实现方式中，如图11、图12所示，该耦合结构300可以设置在三腔耦合(cascaded triplet，CT)型的交叉耦合结构中。
在本申请另一种实现方式中，如图13、图14所示，该耦合结构300可以设置在四腔耦合(Cascaded Quadruplet，CQ)型、BOX型的交叉耦合结构中。
在本申请其他实现方式中，如图15所示，该耦合结构300还可以用于CT型以及Box型组合的交叉耦合结构中。
图15所示的介质滤波器包括8个谐振通孔，左侧的4个谐振通孔呈CT型排列，右侧4个谐振通孔呈Box型排列。其中，CT型排列的谐振通孔的左下角和右上角之间设有1个所述耦合结构300，BOX型排列的谐振通孔的左下角和右下角之间设有1个所述耦合结构300。该耦合结构300可以用于调节耦合量和谐振频率。
对图15所示的介质滤波器进行带外抑制的实验，以下结合实验数据对本申请实施例介质滤波器的滤波效果进行说明。
如图16、图17所示，该耦合结构300用于CT型以及Box型组合的交叉耦合结构中，可以实现两个传输零点。其中，线1为反射系数随频率变化的曲线图，线2为插入损耗随频率变化的曲线图，本申请实施例提供的介质滤波器，利用交叉耦合引入了2个低端传输零点，有效增强了介质滤波器抑制带外信号的能力。
由此，该耦合结构300能够实现强容性耦合也能够实现弱容性耦合，适用于CT，CQ等常用交叉耦合结构。
另一方面，本申请还提供了一种通信设备，该通信设备包括本发明实施例公开的介质滤波器。
本申请实施例提供的通信设备，由于采用了本发明实施例公开的介质滤波器，因此能够实现滤波器小型化的目的，使得通信设备的整体体积可以更小。
需要说明的是，本申请实施例提供的通信设备可以是收发器、基站、微波通信设备、WiFi通信设备等，也可以是各种类型的终端设备。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何在本申请揭露的技术范围内的变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (11)

  1. 一种介质滤波器，其特征在于，包括：
    层叠设置的第一介质块和第二介质块，其中，所述第一介质块和所述第二介质块分别包括相对的第一表面和第二表面，所述第一介质块的第一表面和所述第二介质块的第二表面相对；
    开口位于所述第一介质块的第一表面上的第一盲孔、第一通孔，以及2个或2个以上谐振通孔；
    开口位于所述第二介质块的第二表面上的第二通孔；
    所述第一盲孔内壁、所述第一通孔内壁、所述谐振通孔内壁、所述第二通孔内壁、所述第一介质块的第一表面、以及所述第二介质块的第二表面设有金属层；
    所述第一介质块的第一表面上的金属层与所述第二介质块的第二表面上的金属层相对设置，且所述第一介质块的第一表面上的金属层与所述第二介质块的第二表面上的金属层相连接，所述第一通孔内壁的金属层与所述第一介质块第一表面上的金属层连接，所述第一盲孔内壁的金属层与所述第一介质块第一表面上的金属层连接，所述第二通孔内壁的金属层与所述第二介质块的第二表面上的金属层连接。
  2. 根据权利要求1所述的介质滤波器，其特征在于，所述金属层的材质为银。
  3. 根据权利要求1或2所述的介质滤波器，其特征在于，所述金属层采用采用电镀、化学镀、溅射或离子镀工艺成型。
  4. 根据权利要求1-3任一项所述的介质滤波器，其特征在于，所述第一介质块的第一表面上的金属层包括：位于所述第一盲孔周围的第一金属层，以及位于所述谐振通孔周围的第三金属层，所述第一通孔内壁的金属层、以及所述第一盲孔内壁的金属层与所述第一金属层连接，所述谐振通孔内壁的金属层与所述第三金属层连接，且所述第三金属层与所述第一金属层分离。
  5. 根据权利要求4所述的介质滤波器，其特征在于，所述第二介质块的第二表面上的金属层包括：位于所述第二通孔周围的第二金属层，以及与所述第三金属层相对的第四金属层，所述第二金属层与所述第一金属层连接，且所述第二通孔内壁的金属层与所述第二金属层连接，所述第四金属层与所述第二金属层分离。
  6. 根据权利要求1-5任一项所述的介质滤波器，其特征在于，所述第一通孔和所述第二通孔在所述第一介质块的第一表面上的投影均位于所述第一盲孔内。
  7. 根据权利要求1-6任一项所述的介质滤波器，其特征在于，每个所述谐振通孔与周围本体形成谐振单元，所述第一盲孔所处的位置与两个谐振单元相接。
  8. 根据权利要求1-7任一项所述的介质滤波器，其特征在于，所述第一介质块和所述第二介质块采用陶瓷材料制成。
  9. 根据权利要求1-8任一项所述的介质滤波器，其特征在于，所述第一通孔的深度大于所述第二通孔的深度。
  10. 根据权利要求1-9任一项所述的介质滤波器，其特征在于，所述第一介质块和所述第二介质块的外表面设有所述金属层。
  11. 一种通信设备，其特征在于，包括根据权利要求1-10任一项所述的介质滤波器。
PCT/CN2021/078282 2020-02-28 2021-02-26 介质滤波器和通信设备 WO2021170119A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP21761320.7A EP4096013B1 (en) 2020-02-28 2021-02-26 Dielectric filter and communication device
US17/895,670 US20220416384A1 (en) 2020-02-28 2022-08-25 Dielectric filter and communication device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010131057.0A CN113328219B (zh) 2020-02-28 2020-02-28 介质滤波器和通信设备
CN202010131057.0 2020-02-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/895,670 Continuation US20220416384A1 (en) 2020-02-28 2022-08-25 Dielectric filter and communication device

Publications (1)

Publication Number Publication Date
WO2021170119A1 true WO2021170119A1 (zh) 2021-09-02

Family

ID=77412913

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/078282 WO2021170119A1 (zh) 2020-02-28 2021-02-26 介质滤波器和通信设备

Country Status (4)

Country Link
US (1) US20220416384A1 (zh)
EP (1) EP4096013B1 (zh)
CN (1) CN113328219B (zh)
WO (1) WO2021170119A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114204235A (zh) * 2021-12-15 2022-03-18 四川天邑康和通信股份有限公司 一种monoblock滤波器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185905A (ja) * 1999-12-27 2001-07-06 Toko Inc 誘電体フィルタ
CN109560355A (zh) * 2018-12-28 2019-04-02 重庆思睿创瓷电科技有限公司 用于5g通信的介质体、介质波导滤波器、射频模块及基站
CN110534851A (zh) * 2019-09-28 2019-12-03 江西一创新材料有限公司 一种用于实现对称传输零点的介质滤波器耦合结构
CN209948008U (zh) * 2019-07-30 2020-01-14 苏州市协诚五金制品有限公司 一种用于增加负耦合的陶瓷波导器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157365A (en) * 1991-02-13 1992-10-20 Motorola, Inc. Combined block-substrate filter
US6975181B2 (en) * 2001-05-31 2005-12-13 Sei-Joo Jang Dielectric resonator loaded metal cavity filter
JP3955212B2 (ja) * 2002-01-21 2007-08-08 日本碍子株式会社 積層型誘電体フィルタ
CN106450603B (zh) * 2016-08-24 2019-02-19 张家港保税区灿勤科技有限公司 一种用于基站发射部分的滤波器
CN206148589U (zh) * 2016-08-24 2017-05-03 张家港保税区灿勤科技有限公司 小体积介质波导滤波器
CN209843914U (zh) * 2019-07-16 2019-12-24 深圳市国人射频通信有限公司 一种介质波导滤波器
CN110265755B (zh) * 2019-07-19 2024-01-23 深圳国人科技股份有限公司 一种介质波导滤波器
CN110444849A (zh) * 2019-09-09 2019-11-12 江苏亨鑫科技有限公司 一种介质谐振器负耦合结构及应用其的介质波导滤波器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185905A (ja) * 1999-12-27 2001-07-06 Toko Inc 誘電体フィルタ
CN109560355A (zh) * 2018-12-28 2019-04-02 重庆思睿创瓷电科技有限公司 用于5g通信的介质体、介质波导滤波器、射频模块及基站
CN209948008U (zh) * 2019-07-30 2020-01-14 苏州市协诚五金制品有限公司 一种用于增加负耦合的陶瓷波导器
CN110534851A (zh) * 2019-09-28 2019-12-03 江西一创新材料有限公司 一种用于实现对称传输零点的介质滤波器耦合结构

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4096013A4

Also Published As

Publication number Publication date
EP4096013B1 (en) 2024-05-22
US20220416384A1 (en) 2022-12-29
EP4096013A4 (en) 2023-07-05
CN113328219A (zh) 2021-08-31
CN113328219B (zh) 2022-01-11
EP4096013A1 (en) 2022-11-30

Similar Documents

Publication Publication Date Title
CN110828947B (zh) 一种交叉耦合介质波导滤波器
US11139548B2 (en) Dual-mode monoblock dielectric filter and control elements
CN108400411B (zh) 基于三角形互补开口谐振环的集成基片波导带通滤波器
CN110797613B (zh) 一种十阶六陷波的介质波导滤波器
CN109830789B (zh) 一种基于折叠基片集成波导和互补开口谐振环的宽带带通滤波器
WO2020173243A1 (zh) 一种传输零点可控的基片集成波导滤波器
CN108448211A (zh) 平板介质波导太赫兹滤波器
CN110797614A (zh) 一种具有高次模抑制的小型化基片集成波导滤波器
CN111816962A (zh) 一种介质滤波器电磁混合耦合结构及通信设备
WO2021170119A1 (zh) 介质滤波器和通信设备
CN113300065B (zh) 基于三角形基片集成波导的混合模式带通滤波器
WO2024046276A1 (zh) 三模介质谐振器及介质滤波器
CN110752425A (zh) 一种带通滤波器及通信装置
CN110676542B (zh) 端口耦合结构、滤波器及射频组件
CN2901597Y (zh) 一种陶瓷介质滤波器
CN111883886A (zh) 一种介质滤波器
TWI744042B (zh) 介電質導波管共振器及介電質導波管濾波器
CN105720340A (zh) 一种含有低频传输零点的紧凑型带通滤波器
CN213782227U (zh) 一种介质波导滤波器
CN111900518B (zh) 一种具有180度移相器的介质滤波器
CN112366432B (zh) 具有共模抑制且结构紧凑的三模hmsiw平衡带通滤波器
CN110911789B (zh) 一种基片集成波导带通滤波器
CN212434802U (zh) 一种介质滤波器电磁混合耦合结构及通信设备
CN111478000B (zh) 一种采用双层圆形贴片的多零点带通平衡滤波器
WO2021077379A1 (zh) 带阻滤波器及电子设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21761320

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021761320

Country of ref document: EP

Effective date: 20220825

NENP Non-entry into the national phase

Ref country code: DE