WO2021168942A1 - 基于铌酸锂-硅晶圆的高速低电压电光调制器 - Google Patents

基于铌酸锂-硅晶圆的高速低电压电光调制器 Download PDF

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WO2021168942A1
WO2021168942A1 PCT/CN2020/080124 CN2020080124W WO2021168942A1 WO 2021168942 A1 WO2021168942 A1 WO 2021168942A1 CN 2020080124 W CN2020080124 W CN 2020080124W WO 2021168942 A1 WO2021168942 A1 WO 2021168942A1
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lithium niobate
silicon
mode spot
waveguide
electro
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French (fr)
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邹卫文
王静
徐绍夫
王兴军
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Peking University
Shanghai Jiao Tong University
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Shanghai Jiao Tong University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/217—Multimode interference type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/20—LiNbO3, LiTaO3

Definitions

  • the invention belongs to the technical field of photonic heterogeneous integration, in particular to a high-speed low-voltage electro-optical modulator on a lithium niobate-silicon wafer.
  • the electro-optical modulator is an important functional device in optical fiber communication. Its function is to load electrical signals onto optical signals, thereby realizing signal transmission and processing in the optical domain.
  • pure silicon-based modulators prepared on silicon wafers are the most common modulators in optical signal processing systems.
  • pure silicon-based modulators have been unable to meet the requirements of high speed, low voltage, and low loss.
  • replacing pure silicon-based modulators with lithium niobate modulators can further increase the modulation rate of the modulator, reduce the voltage, and reduce the loss of the modulator.
  • the working principle of the thin-film lithium niobate modulator is to utilize the linear electro-optical effect of the lithium niobate waveguide, that is, under the action of an external electric field, the refractive index of the lithium niobate waveguide changes, thereby completing phase modulation or intensity modulation.
  • lithium niobate waveguides There are two types of existing modulation methods using lithium niobate waveguides.
  • One is a pure thin-film lithium niobate modulator that etches a lithium niobate wafer on a lithium niobate wafer to form a ridge-type lithium niobate waveguide (see reference 1: Wang, Cheng, et al. "Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages.” Nature 562.7725 (2016): 101.), this method uses a ridge-type lithium niobate waveguide to confine the transmission of light waves; 2.
  • LiNbO 3thin-film modulators using silicon nitride surface ridge waveguides using silicon waveguides or silicon nitride waveguides to guide the transmission of light waves, while the light waves bound in the lithium niobate waveguide will be subjected to electro-optical modulation.
  • the use of heterogeneous integration technology can take advantage of various materials, allowing silicon to be combined with other materials to achieve multi-functional photonic device integration. Therefore, the second type of modulator will implement high-speed, low-voltage electro-optic modulation in the system-on-chip, thereby improving the performance of the system-on-chip.
  • the present invention proposes an electro-optical modulator based on lithium niobate-silicon wafer at high speed and low voltage.
  • the device changes the energy of light waves in silicon waveguides and lithium niobate waveguides, and exerts the refractive index of silicon waveguides.
  • this method utilizes lithium niobate-silicon wafers and mature silicon optical integration technology.
  • the silicon wafer is located above the lithium niobate wafer, and the silicon wafer is etched to form a lithium niobate-silicon hybrid waveguide to control the transmission of light waves. At the same time, the etching of the lithium niobate wafer is avoided.
  • a lithium niobate-silicon wafer high-speed low-voltage electro-optical modulator which is characterized in that it includes a silicon substrate layer, a silicon dioxide isolation layer, a lithium niobate wafer layer and a silicon waveguide layer from bottom to top.
  • the silicon waveguide layer is etched to form a multimode interferometer, a thermal modulation phase shifting arm, a mode spot converter, an electrical modulation phase shifting arm, a DC bias electrode and a radio frequency electrode.
  • the multimode interferometer and thermal modulation phase shifting arm are located in the high refractive index zone, and the mode spot converter is located in the mode spot In the conversion area, the electrical modulation phase shifting arm is located in the electro-optic modulation area; the multimode interferometer, the thermal modulation phase shifting arm, the mode spot converter, and the electrical modulation phase shifting arm constitute a waveguide structure assembly, and the The DC bias electrode is formed near the thermal modulation phase shifting arm, and the radio frequency electrode is formed near the electrical modulation phase shifting arm.
  • the waveguide structure assembly includes two multimode interferometers, four mode spot converters, two thermal modulation phase shifting arms, two electrical modulation phase shifting arms, a DC bias electrode and a radio frequency electrode.
  • the multimode interferometer is used as a multiplexer and a demultiplexer respectively.
  • the two output ports of the multiplexer are respectively connected to one end of the two thermal modulation phase shifting arms.
  • the other ends are respectively connected to one end of the two mode spot converters, the other ends of the two mode spot converters are respectively connected to one end of the two electrical modulation phase shifting arms, and the other ends of the two electrical modulation phase shifting arms are respectively connected to One end of the other two mode spot converters is connected, and the other end of the two mode spot converters is connected to the multiplexer.
  • the mode spot converter can be realized by a single-layer conical coupler or a double-layer conical coupler.
  • the waveguide structure components are, in order, a multimode interferometer, a thermal modulation phase shifting arm, a mode spot converter, an electrical modulation phase shifting arm and a multimode interferometer.
  • the waveguide structure components are, in order, a multimode interferometer, a mode spot converter, an electrical modulation phase shifting arm and a multimode interferometer.
  • a high-speed and low-voltage electro-optic modulator based on lithium niobate-silicon wafers which is characterized by high refractive index area, mode spot conversion area, electro-optic modulation area, and mode spot conversion from the input end to the output end of the modulator. Zone, high refractive index zone.
  • the energy of the light wave is located in the silicon waveguide; in the mode spot conversion area, the energy of the light wave is transferred from the silicon waveguide to the lithium niobate waveguide; in the electro-optic modulation area, most of the energy of the light wave is located in the lithium niobate In the waveguide, for electro-optical modulation.
  • the structure of the silicon waveguide is changed to make the light waves have different energy distributions in the lithium niobate-silicon hybrid waveguide.
  • the silicon waveguide has more energy distribution, it is suitable for realizing compact wave splitting function, multiplexing function and thermo-optical modulation function; when the lithium niobate waveguide has a higher energy distribution, it is suitable for realizing high speed and low power.
  • Electro-optical modulation function of voltage when the lithium niobate waveguide has a higher energy distribution, it is suitable for realizing high speed and low power.
  • the energy of the light wave is located in the silicon waveguide; in the mode spot conversion area, the energy of the light wave is transferred from the silicon waveguide to the lithium niobate waveguide; in the electro-optic modulation area, most of the energy of the light wave is located in the lithium niobate In the waveguide, for electro-optical modulation.
  • the invention changes the energy of the light wave in the silicon waveguide and the lithium niobate waveguide, takes advantage of the large refractive index of the silicon waveguide and realizes the compactness of the device, and at the same time takes advantage of the lithium niobate waveguide having a large electro-optical coefficient and realizing electro-optical modulation.
  • the invention utilizes lithium niobate-silicon wafer and mature silicon optical integration technology.
  • the silicon wafer is located above the lithium niobate wafer, and the lithium niobate-silicon hybrid waveguide is formed by etching the silicon wafer to control the transmission of light waves. At the same time, the etching of the lithium niobate wafer is avoided.
  • FIG. 1 is a schematic diagram of the structure of a lithium niobate-silicon wafer high-speed low-voltage electro-optical modulator of the present invention, wherein (a) is a top view and (b) is a cross-sectional view.
  • FIG. 2 is a schematic diagram of the structure of the mode spot converter 3 of the present invention, in which (a) is a three-dimensional structure diagram, (b) is a cross-sectional view, and (c) is a top view.
  • Fig. 3 is a schematic diagram of the energy distribution of light waves at the input and output ports of the mode spot converter according to the present invention, that is, a schematic diagram of the mode field distribution.
  • Figure 4 is a transverse cross-sectional view of the present invention in the electro-optic modulation area.
  • FIG. 1 shows the electro-optic modulator of the Mach-Zehnder interference structure of the present invention. From the top view (a), it can be seen that the electro-optic modulator of the present invention is located on the same lithium niobate-silicon wafer, and its structure includes a multimode interferometer 1 , Phase shifting arm 2, mode spot converter 3, DC bias electrode 4, radio frequency electrode 5 and other components, wherein the phase shifting arm 2 includes a thermal strip phase shifting arm 21 and an electric modulation phase shifting arm 22.
  • the multimode interferometer 1, the thermal modulation phase shifting arm 21 and the DC bias electrode 4 are located in the high refractive index area, the mode spot converter 3 is located in the mode spot conversion area, and the electrical modulation direction shifting arm 22 and the radio frequency electrode 5 are located in the electro-optic modulation area;
  • the electro-optical modulator of the present invention includes a silicon substrate layer 6, a silicon dioxide isolation layer 7, a lithium niobate wafer layer 8, and a silicon waveguide layer 9 from bottom to top.
  • the silicon waveguide layer 10 is etched to form a multimode interferometer 1, a phase shifting arm 2 and a mode spot converter 3.
  • FIG. 2 is a schematic diagram of the structure of the mode spot converter 3 according to the present invention. It can be seen from the three-dimensional structure diagram (a) that the spot converter 3 of the present invention is composed of two-layer conical couplers; the cross-sectional view (b) can see the input and output ends of the spot converter of the present invention They have different waveguide thicknesses; from the top view (c), it can be seen that the input end and the output end of the spot converter 3 of the present invention have different waveguide widths.
  • Figure 3 is a schematic diagram of the energy distribution of light waves at the input and output ports of the lithium niobate-silicon wafer high-speed, low-voltage electro-optic modulator in the template conversion area, that is, the schematic diagram of the mode field distribution, which can be seen from the schematic diagram of the optical field distribution.
  • Spot converter most of the light waves bound in the silicon waveguide are transmitted to the lithium niobate waveguide.
  • FIG. 4 is a longitudinal cross-sectional view of the present invention in the electro-optic modulation area.
  • the electro-optical modulator of the present invention includes a silicon substrate layer 6, a silicon dioxide isolation layer 7, a lithium niobate wafer layer 8, a silicon waveguide layer 9 and a radio frequency electrode 5 from bottom to top.
  • the electrical modulation phase shift arm 4 is located at the radio frequency electrode 5. between.
  • the basic structure of the present invention is a Mach-Zehnder modulator, including two multimode interferometers 1, two mode spot converters 3, two thermal modulation phase shifting arms 21, two electrical modulation phase shifting arms 22, and a DC bias Electrode 4 and radio frequency electrode 5.
  • the multi-mode interferometer is a 1 ⁇ 2 multi-mode interferometer, and the two multi-mode interferometers 1 are used as a multiplexer and a splitter respectively.
  • the two output ports of the multiplexer are respectively connected to two thermal modulation phase shifting arms 21, and the two thermal modulation phase shifting arms 21 are respectively connected to one end of two mode spot converters 3, and the two mode spot converters 3
  • the other end is respectively connected to two electrical modulation phase shifting arms 22, the two electrical modulation phase shifting arms 22 are respectively connected to two mode spot converters, and the two mode spot converters 3 are finally connected to the multiplexer.
  • the DC bias electrode 4 is formed near the thermal modulation phase shifting arm 21, and the radio frequency electrode 5 is formed near the electrical modulation phase shifting arm 22.
  • the biggest feature of the present invention is that there is a silicon wafer on the lithium niobate wafer, and the silicon wafer is etched through a mature complementary metal oxide integration process to form a lithium niobate-silicon hybrid waveguide.
  • the silicon wafer is etched through a mature complementary metal oxide integration process to form a lithium niobate-silicon hybrid waveguide.
  • the thermally adjustable phase shifting arm 21 is located in the high refractive index region, and is used for the bias point control of the high-speed, low-voltage modulator. Therefore, from one port of the modulator to the other, the waveguide structure components are the multimode interferometer 1, the thermal modulation phase shifting arm 21, the mode spot converter 3, the electrical modulation phase shifting arm 22, and the multimode interferometer 1, respectively.
  • the thermally modulated phase shifter 21 is located in the low refractive index area and is used for bias point control of the high-speed, low-voltage modulator. Therefore, from one port of the modulator to the other, the waveguide structure components are the multimode interferometer 1, the mode spot converter 3, the thermal modulation phase shifting arm 21, the electrical modulation phase shifting arm 22, and the multimode interferometer 1 respectively.
  • the electronic modulation phase-shifting arm is used to control the bias point of the high-speed, low-voltage modulator. Therefore, from one port of the modulator to another port, the waveguide structure components are the multimode interferometer 1, the mode spot converter 3, the electrical modulation phase shifting arm 22, and the multimode interferometer 1 respectively.
  • the silicon waveguide since the silicon waveguide has different etching widths and heights in the high refractive index region and the electro-optic modulation region, a two-layer tapered coupler is used as the mode spot converter 3 Carry out the transfer and transmission of light waves.
  • the silicon waveguide in the high refractive index area and the electro-optic modulation area have the same etching width, so a layer of tapered coupler can be used as the mode spot converter 3 for light wave transfer and transmission.

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Abstract

一种基于铌酸锂-硅晶圆的高速低压电光调制器，硅晶圆位于铌酸锂晶圆（8）上方，通过刻蚀硅波导层（9），形成铌酸锂-硅混合波导，通过改变硅波导的结构使得光波在铌酸锂-硅混合波导中具有不同的能量分布。当硅波导中具有更多的能量分布时，适用于实现紧凑的分波功能、合波功能与热光调制功能；当铌酸锂波导中具有更高的能量分布时，适用于实现高速、低电压的电光调制功能。分别发挥铌酸锂和硅材料平台的优势，获得适用于高速低电压的电光调制器。

Description

基于铌酸锂-硅晶圆的高速低电压电光调制器 技术领域
本发明属于光子异质集成技术领域，特别是一种铌酸锂-硅晶圆上的高速低电压电光调制器。
技术背景
电光调制器是光纤通信中重要的功能器件，其作用是将电信号加载至光信号上，从而在光域上实现信号传输、处理等。利用互补金属氧化物半导体集成技术，在硅晶圆上制备的纯硅基调制器是光信号处理系统中最为常见的调制器。然而随着光纤通信技术的发展，纯硅基调制器已经难以满足高速、低电压、低损耗等需求。近年来得益于铌酸锂薄膜制备技术的发展，将铌酸锂调制器代替纯硅基调制器可以进一步提高调制器的调制速率、降低电压、降低调制器损耗。薄膜铌酸锂调制器的工作原理是利用了铌酸锂波导的线性电光效应，即在外部电场的作用下，铌酸锂波导的折射率发生改变，进而完成相位调制或者强度调制。
现有的利用铌酸锂波导进行调制的方式包括两类，一是在铌酸锂晶圆上刻蚀铌酸锂晶圆形成脊型铌酸锂波导的纯薄膜铌酸锂调制器(参见文献1：Wang,Cheng,et al."Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages."Nature 562.7725(2018):101.)，该方式利用脊型铌酸锂波导束缚光波的传输；二是硅-铌酸锂波导调制器(参见文献2：Weigel,Peter O.,et al."Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100GHz 3-dB electrical modulation bandwidth."Optics express 26.18(2018):23728-23739.)或者氮化硅-铌酸锂波导调制器(参见文献3：Jin,Shilei,et al."LiNbO 3thin-film modulators using silicon nitride surface ridge waveguides."IEEE Photonics Technology Letters 28.7(2015):736-739.)，利用硅波导或者氮化硅波导引导光波的传输，同时束缚在铌酸锂波导中的光波将会受到电光调制的作用。而随着片上系统的出现，利用异质集成技术能够发挥各种材料的优势，使得硅与其它材料结合实现多功能的光子器件集成。因而第二种类型的调制器将在片上系 统中实现高速、低压的电光调制功能，从而提升片上系统的性能。
发明内容
本发明在于针对现有技术的不足，提出一种基于铌酸锂-硅晶圆高速低电压的电光调制器，该器件改变光波在硅波导和铌酸锂波导中的能量，发挥硅波导折射率大，实现器件紧凑的优势，同时发挥铌酸锂波导具有较大电光系数，实现电光调制的优势。此外该方法利用了铌酸锂-硅晶圆和成熟的硅光集成技术，硅晶圆位于铌酸锂晶圆上方，通过刻蚀硅晶圆形成铌酸锂-硅混合波导从而控制光波的传输，与此同时避免了铌酸锂晶圆的刻蚀。
本发明的技术解决方案如下：
一种铌酸锂-硅晶圆高速低电压电光调制器，其特点在于：由下到上包括硅衬底层、二氧化硅隔离层、铌酸锂晶圆层和硅波导层，在所述的硅波导层刻蚀形成多模干涉仪、热调移相臂、模斑转换器、电调移相臂、直流偏置电极和射频电极，从输入端到输出端依次是高折射率区、模斑转换区、电光调制区、模斑转换区、高折射率区，所述的多模干涉仪、热调移相臂位于高折射率区域，所述的模斑转换器位于所述的模斑转换区，所述的电调移相臂位于所述的电光调制区；所述的多模干涉仪、热调移相臂、模斑转换器、电调移相臂构成波导结构组件，所述的直流偏置电极形成在所述的热调移相臂附近，所述的射频电极形成在所述的电调移相臂附近。
所述的波导结构组件包括两个多模干涉仪、四个模斑转换器、两个热调移相臂、两个电调移相臂、直流偏置电极和射频电极，所述的两个多模干涉仪分别作为合波器与分波器，所述的合波器的两个输出端口分别与所述的两个热调移相臂的一端相连，该两个热调移相臂的另一端分别与两个模斑转换器的一端相连，该两个模斑转换器的另一端分别与两个电调移相臂的一端相连，该两个电调移相臂的另一端分别与另两个模斑转换器的一端相连，该两个模斑转换器另一端与所述的合波器相连。
所述的模斑转换器可以通单层锥形耦合器或者双层锥形耦合器实现。
所述的波导结构组件依次是多模干涉仪、热调移相臂、模斑转换器、电调移相臂和多模干涉仪。
所述的波导结构组件依次是多模干涉仪、模斑转换器、电调移相臂和多模干涉仪。
一种基于铌酸锂-硅晶圆的高速低电压的电光调制器，其特点在于从调制器的输入端到输出端分别是高折射率区、模斑转换区、电光调制区、模斑转换区、高折射率区。
在高折射率区，大部分光波的能量位于硅波导中；在模斑转换区，光波的能量从硅波导转移至铌酸锂波导中；在电光调制区，大部分光波的能量位于铌酸锂波导中，以进行电光调制。
本发明的技术效果如下：
本发明通过改变硅波导的结构使得光波在铌酸锂-硅混合波导中具有不同的能量分布。当硅波导中具有更多的能量分布时，适用于实现紧凑的分波功能、合波功能与热光调制功能；当铌酸锂波导中具有更高的能量分布时，适用于实现高速、低电压的电光调制功能。
在高折射率区，大部分光波的能量位于硅波导中；在模斑转换区，光波的能量从硅波导转移至铌酸锂波导中；在电光调制区，大部分光波的能量位于铌酸锂波导中，以进行电光调制。
本发明改变光波在硅波导和铌酸锂波导中的能量，发挥硅波导折射率大，实现器件紧凑的优势，同时发挥铌酸锂波导具有较大电光系数，实现电光调制的优势。
本发明利用铌酸锂-硅晶圆和成熟的硅光集成技术，硅晶圆位于铌酸锂晶圆上方，通过刻蚀硅晶圆形成铌酸锂-硅混合波导从而控制光波的传输，与此同时避免了铌酸锂晶圆的刻蚀。
附图说明
图1为本发明铌酸锂-硅晶圆高速低电压电光调制器结构示意图，其中(a)为俯视图，(b)为剖视图。
图2为本发明模斑转换器3的结构示意图，其中(a)为三维结构图，(b)为剖视图，(c)为俯视图。
图3为本发明在模斑转换器输入输出端口的光波的能量分布示意图即模场 分布示意图，其中(a)为大部分光波能量在硅波导中的模场分布图，(b)为大部分光波能量分布在铌酸锂波导中的模场分布图。
图4为本发明在电光调制区的横向剖图视图。
具体实施方式
下面结合附图和实施例对本发明作详细说明，给出了详细的实施方式和结构，但本发明的保护范围不限于下述的实施例。
图1所示为本发明马赫-曾德干涉结构的电光调制器，由俯视图(a)可以看到本发明电光调制器位于同一铌酸锂-硅晶圆上，其结构包含多模干涉仪1、移相臂2、模斑转换器3、直流偏置电极4与射频电极5等组件，其中移相臂2包括热条移相臂21和电调移相臂22。多模干涉仪1、热调移相臂21和直流偏置电极4位于高折射率区，模斑转换器3位于模斑转换区，电调移向臂22和射频电极5位于电光调制区；由剖视图(b)可以看到，本发明电光调制器由下到上包括硅衬底层6、二氧化硅隔离层7、铌酸锂晶圆层8、硅波导层9。对所述硅波导层10进行刻蚀形成多模干涉仪1、移相臂2与模斑转换器3。
图2所示为本发明所述的模斑转换器3的结构示意图。由三维结构图(a)可以看到，本发明所述的模斑转化器3由两层锥形耦合器组成；由剖视图(b)可以看到本发明模斑转换器的输入端与输出端具有不同的波导厚度；由俯视图(c)可以看到本发明模斑转换器3的输入端与输出端具有不同的波导宽度。
图3所示为本发明铌酸锂-硅晶圆高速、低电压电光调制器在模板转换区输入输出端口的光波的能量分布示意图即模场分布示意图由光场分布示意图可以看到，通过模斑转换器，束缚在硅波导中的大部分光波传输至铌酸锂波导中。
图4所示为本发明在电光调制区的纵向截面图。本发明电光调制器由下到上包括硅衬底层6、二氧化硅隔离层7、铌酸锂晶圆层8、硅波导层9与射频电极5，其中电调移相臂4位于射频电极5之间。
实施例1
本发明基本结构是马赫-曾德调制器，包括两个多模干涉仪1，两个模斑转换器3，两个热调移相臂21、两个电调移相臂22、直流偏置电极4与射频电极5。其中多模干涉仪为1×2多模干涉仪，两个多模干涉仪1分别作为合波器与分波 器。合波器的两个输出端口分别与两个热调移相臂21相连，两个热调移相臂21分别与两个模斑转换器3的一端相连，该两个模斑转换器3的另一端分别与两个电调移相臂22相连，两个电调移相臂22分别与两个模斑转换器相连，两个模斑转换器3最终与合波器相连。所述的直流偏置电极4形成在热调移相臂21附近，而所述的射频电极5形成在电调移相臂22附近。本发明最大的特征在于铌酸锂晶圆上存在硅晶圆，通过成熟的互补金属氧化物集成工艺刻蚀硅晶圆，形成铌酸锂-硅混合波导。通过控制硅波导的刻蚀宽度与刻蚀深度，使得光波能在硅波导和铌酸锂波导中传输。
实施例2
针对高速、低电压调制器的偏置点控制方法，在本发明的实施例中，热调移相臂21位于高折射率区域，用于高速、低电压调制器的偏置点控制。因此从调制器的一端口到另一端口，波导结构组件分别是多模干涉仪1、热调移相臂21、模斑转换器3、电调移相臂22、多模干涉仪1。
实施例3
在本发明的另一实施例中，热调移相器21位于低折射率区域，用于高速、低电压调制器的偏置点控制。因此从调制器的一端口到另一端口，波导结构组件分别是多模干涉仪1、模斑转换器3、热调移相臂21、电调移相臂22、多模干涉仪1。
实施例4
在本发明的其它实施例中，利用电调移相臂进行高速、低电压调制器的偏置点控制。因此从调制器的一端口到另一端口，波导结构组件分别是多模干涉仪1、模斑转换器3、电调移相臂22、多模干涉仪1。
针对模斑转换方式，在本发明的实施例中，由于在高折射率区与电光调制区，硅波导具有不同的刻蚀宽度和高度，因而使用两层锥形耦合器作为模斑转换器3进行光波的转移与传输。在本发明的其它实施例中，在高折射率区与电光调制区硅波导具有同样的刻蚀宽度，因而可以使用一层锥形耦合器作为模斑转换器3进行光波的转移与传输。

Claims (5)

  1. 一种铌酸锂-硅晶圆高速低电压电光调制器，其特征在于：由下到上包括硅衬底层(6)、二氧化硅隔离层(7)、铌酸锂晶圆层(8)和硅波导层(9)，在所述的硅波导层(9)刻蚀形成多模干涉仪(1)、移相臂(2)、模斑转换器(3)、直流偏置电极(4)和射频电极(5)，从输入端到输出端依次是高折射率区、模斑转换区、电光调制区、模斑转换区和高折射率区，所述移相臂(2)包括热调移相臂(21)和电调移相臂(22)，所述的多模干涉仪(1)、热调移相臂(21)位于高折射率区域，所述的模斑转换器(3)位于所述的模斑转换区，所述的电调移相臂(22)位于所述的电光调制区；所述的多模干涉仪(1)、移相臂(2)、模斑转换器(3)构成波导结构组件，所述的直流偏置电极(4)形成在所述的热调移相臂(21)附近，所述的射频电极(5)形成在所述的电调移相臂(22)附近。
  2. 根据权利要求1所述的铌酸锂-硅晶圆高速低电压电光调制器，其特征在于：所述的波导结构组件包括两个多模干涉仪(1)、四个模斑转换器(3)、两个热调移相臂(21)、两个电调移相臂(22)、直流偏置电极(4)和射频电极(5)，所述的两个多模干涉仪(1)分别作为合波器与分波器，所述的合波器的两个输出端口分别与所述的两个热调移相臂(21)的一端相连，该两个热调移相臂(21)的另一端分别与两个模斑转换器(3)的一端相连，该两个模斑转换器(3)的另一端分别与两个电调移相臂(22)的一端相连，该两个电调移相臂(22)的另一端分别与另两个模斑转换器(3)的一端相连，该两个模斑转换器(3)另一端与所述的合波器相连。
  3. 根据权利要求1所述的铌酸锂-硅晶圆高速低电压电光调制器，其特征在于：所述的模斑转换器(3)可以通过单层锥形耦合器或者双层锥形耦合器实现。
  4. 根据权利要求1所述的铌酸锂-硅晶圆高速低电压电光调制器，其特征在于：所述的波导结构组件依次是多模干涉仪(1)、热调移相臂(21)、模斑转换器(3)、电调移相臂(22)和多模干涉仪(1)。
  5. 根据权利要求1所述的铌酸锂-硅晶圆高速低电压电光调制器，其特征在于：所述的波导结构组件依次是多模干涉仪(1)、模斑转换器(3)、电调移相臂(22)和多模干涉仪(1)。
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