CN109116590B - 硅和铌酸锂混合集成光调制器及其制备方法 - Google Patents
硅和铌酸锂混合集成光调制器及其制备方法 Download PDFInfo
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- CN109116590B CN109116590B CN201810467755.0A CN201810467755A CN109116590B CN 109116590 B CN109116590 B CN 109116590B CN 201810467755 A CN201810467755 A CN 201810467755A CN 109116590 B CN109116590 B CN 109116590B
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- silicon
- optical
- lithium niobate
- waveguide
- beam splitting
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- 230000003287 optical effect Effects 0.000 title claims abstract description 113
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 239000012212 insulator Substances 0.000 claims abstract description 15
- ZVLDJSZFKQJMKD-UHFFFAOYSA-N [Li].[Si] Chemical compound [Li].[Si] ZVLDJSZFKQJMKD-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 230000005697 Pockels effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (4)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201810467755.0A CN109116590B (zh) | 2018-05-16 | 2018-05-16 | 硅和铌酸锂混合集成光调制器及其制备方法 |
PCT/CN2018/087918 WO2019218385A1 (zh) | 2018-05-16 | 2018-05-22 | 硅和铌酸锂混合集成光调制器及其制备方法 |
Applications Claiming Priority (1)
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CN201810467755.0A CN109116590B (zh) | 2018-05-16 | 2018-05-16 | 硅和铌酸锂混合集成光调制器及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN109116590A CN109116590A (zh) | 2019-01-01 |
CN109116590B true CN109116590B (zh) | 2020-11-03 |
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CN201810467755.0A Active CN109116590B (zh) | 2018-05-16 | 2018-05-16 | 硅和铌酸锂混合集成光调制器及其制备方法 |
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CN (1) | CN109116590B (zh) |
WO (1) | WO2019218385A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110161625B (zh) * | 2019-05-17 | 2021-03-30 | 上海交通大学 | 硅基铌酸锂薄膜电光调制器阵列集成的方法 |
US11204535B2 (en) | 2019-05-17 | 2021-12-21 | Shanghai Jiao Tong University | Silicon-based lithium niobate film electro-optic modulator array and integration method thereof |
CN110187526A (zh) * | 2019-05-17 | 2019-08-30 | 上海交通大学 | 硅基铌酸锂薄膜电光调制器阵列 |
CN110609399A (zh) * | 2019-08-05 | 2019-12-24 | 华南师范大学 | 折叠式硅-铌酸锂混合集成电光调制器及其制备方法 |
CN111061010A (zh) * | 2020-01-09 | 2020-04-24 | 中山大学 | 热调偏置硅铌酸锂混合集成调制器及制备方法 |
CN111175999B (zh) * | 2020-02-24 | 2021-05-04 | 上海交通大学 | 基于铌酸锂-硅晶圆的高速低电压电光调制器 |
CN111487719A (zh) * | 2020-04-22 | 2020-08-04 | 电子科技大学 | 一种基于模式转换的硅基铌酸锂偏振无关光调制器 |
CN111722316B (zh) * | 2020-06-05 | 2021-09-07 | 上海交通大学 | 光电芯片及其混合集成方法 |
CN115903282A (zh) * | 2021-08-18 | 2023-04-04 | 华为技术有限公司 | 光波导器件、光芯片、通信设备 |
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JP2003195239A (ja) * | 2001-12-25 | 2003-07-09 | Nec Corp | 集積型光導波路デバイス |
US20090324163A1 (en) * | 2008-06-30 | 2009-12-31 | Jds Uniphase Corporation | High confinement waveguide on an electro-optic substrate |
CN104460053B (zh) * | 2014-12-23 | 2017-06-23 | 东南大学 | 一种硅基垂直槽式纳米线光调制器 |
CN106092080B (zh) * | 2016-08-26 | 2019-04-09 | 武汉光迅科技股份有限公司 | Plc芯片和铌酸锂调制器混合集成光学器件 |
CN108020938A (zh) * | 2016-10-31 | 2018-05-11 | 天津领芯科技发展有限公司 | 一种可兼容cmos工艺的硅基铌酸锂混合集成电光调制器及其制造方法 |
-
2018
- 2018-05-16 CN CN201810467755.0A patent/CN109116590B/zh active Active
- 2018-05-22 WO PCT/CN2018/087918 patent/WO2019218385A1/zh active Application Filing
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WO2019218385A1 (zh) | 2019-11-21 |
CN109116590A (zh) | 2019-01-01 |
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Effective date of registration: 20201106 Address after: 511436 227, 7th floor, building 3, industrial park, 2 Haijing Road, Xinzao Town, Panyu District, Guangzhou City, Guangdong Province Patentee after: Guangzhou niobium Semiconductor Technology Co.,Ltd. Address before: 510275 Xingang West Road, Guangdong, Guangzhou, No. 135, No. Patentee before: SUN YAT-SEN University |
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Address after: Room 102, No. 6 Jihuo Road, Huangpu District, Guangzhou City, Guangdong Province, 510700 Patentee after: Guangzhou Niobao Optoelectronics Co.,Ltd. Country or region after: China Address before: 511436 227, 7 / F, building 3, Haijing Road, Xinzao Town, Panyu District, Guangzhou City, Guangdong Province Patentee before: Guangzhou niobium Semiconductor Technology Co.,Ltd. Country or region before: China |