CN116841063A - 硅-氧化硅-铌酸锂高带宽电光调制器及集成方法 - Google Patents
硅-氧化硅-铌酸锂高带宽电光调制器及集成方法 Download PDFInfo
- Publication number
- CN116841063A CN116841063A CN202210321287.2A CN202210321287A CN116841063A CN 116841063 A CN116841063 A CN 116841063A CN 202210321287 A CN202210321287 A CN 202210321287A CN 116841063 A CN116841063 A CN 116841063A
- Authority
- CN
- China
- Prior art keywords
- silicon
- silicon oxide
- electro
- lithium niobate
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- ZNTNOUPVDYWPHO-UHFFFAOYSA-N [Li].[Si]=O.[Si] Chemical compound [Li].[Si]=O.[Si] ZNTNOUPVDYWPHO-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 13
- 230000010354 integration Effects 0.000 title abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 90
- 239000010703 silicon Substances 0.000 claims abstract description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 88
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 73
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 19
- 238000005253 cladding Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 abstract description 2
- 238000001465 metallisation Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 32
- 238000005516 engineering process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007736 thin film deposition technique Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- ZVLDJSZFKQJMKD-UHFFFAOYSA-N [Li].[Si] Chemical compound [Li].[Si] ZVLDJSZFKQJMKD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- -1 silicon-silicon oxide-erbium Chemical compound 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12159—Interferometer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/07—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 buffer layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
Abstract
硅‑氧化硅‑铌酸锂高带宽电光调制器及集成方法,晶圆从下到上分别为硅衬底层、氧化硅隔离层、铌酸锂薄膜层、氧化硅缓冲层与硅薄膜层;电光调制器包括多模干涉仪、模斑转换器、电光移相臂、行波电极和热电极。本发明通过多次刻蚀形成了常规硅波导、薄硅波导与氧化硅波导,通过金属沉积形成了行波电极和热电极。氧化硅层作为缓冲层缓解了硅晶圆与铌酸锂晶圆之间的热失配与晶格失配,提升了在基于硅‑氧化硅‑铌酸锂晶圆的电光调制器的可靠性与良率,并且为电光调制器的设计提供了新的自由度。本发明与CMOS工艺兼容,并且发挥了硅、氧化硅、铌酸锂三种材料的优势,有利于提高集成的紧凑度、可靠性。
Description
技术领域
本发明涉及光电器件集成领域,具体是一种硅-氧化硅-铌酸锂晶圆的高带宽电光调制器电光调制器及集成方法。
技术背景
随着光通信、微波光子、光量子计算与光子智能系统的快速发展,电光调制器作为上述系统中的核心器件之一,一直受到广泛关注与研究。与此同时,随着集成技术的发展,在片上实现集成调制器的手段也越来越丰富。利用硅基集成技术可以实现大规模、低成本的电光调制器。而随着薄膜铌酸锂制备技术的发展,电光调制器可以达到更高的线性度和带宽。与此同时,硅/氮化硅-铌酸锂异质集成电光调制器也展现除了其独特的优势。例如,利用晶圆键合技术将铌酸锂晶片键合至硅基芯片上,形成硅-铌酸锂电波导,避免了铌酸锂的刻蚀,同时也发挥了硅基材料的成熟制备工艺以及高密度集成的优势(参见文献1:PeterO.Weigel,et al.,″Bonded thin film lithium niobate modulator on a siliconphotonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth,″Opt.Express 26.23728-23739(2018))。或者利用薄膜沉积技术,将氮化硅薄膜沉积在铌酸锂晶圆上,形成氮化硅-铌酸锂波导,同样的也避免了铌酸锂的刻蚀(参见文献2:AmirmahdiHonardoost,et al.,″Towards subterahertz bandwidth ultracompact lithiumniobate electrooptic modulators,″Opt.Express 27,6495-6501(2019))。然而,前者由于晶片键合而不适用于大批量的集成产出,后者由于采用了氮化硅波导面临着集成尺寸的挑战。
基于以上的挑战,研究人员提出了一种基于铌酸锂-硅晶圆的高速低电压电光调制器。在前端工艺实现硅晶圆与铌酸锂晶圆的键合,并且通过控制硅晶圆的刻蚀深度来控制光的传输,从而同时实现大批量、高集成度与优异的电光调制(参见文献1:邹卫文,王静,徐绍夫,王兴军,《基于铌酸锂-硅晶圆的高速低电压电光调制器CN111175999A》。然而,由于硅材料与铌酸锂材料之间存在的热失配,会使得硅晶圆与铌酸锂晶圆在键合时的退火温度不能过高,最终导致其键合强度不高。
WO2021258616A1公开一种偏振无关的光开关,虽然,在铌酸锂波导2上生长二氧化硅包层,但其目的是使得二氧化硅包层覆盖偏振无关调制波导2与金属电极7,从而实现偏振无关调制波导6不与空气直接接触的目的。
发明内容
本发明的目的在于克服上述现有技术存在的缺点,提出了一种基于硅-氧化硅-铌酸锂晶圆的高带宽电光调制器及集成方法。发挥硅基材料与铌酸锂材料的优势,同时,硅晶圆层与铌酸锂晶圆层之间存在一层氧化硅作为缓冲层。所述的缓冲层能够避免硅晶圆层与铌酸锂晶圆层之间的较大热失配与晶格失配,最终使得晶圆之间的键合强度更强。除此以外,通过对所述缓冲层的刻蚀,可以形成氧化硅波导,氧化硅波导尺寸为波导设计提供了新的自由度。
本发明的技术解决方案如下:
硅-氧化硅-铌酸锂高带宽电光调制器,其特点在于,晶圆结构从上到下依次为硅衬底层、氧化硅隔离层、铌酸锂薄膜层、氧化硅缓冲层与硅薄膜层;
所述电光调制器为推挽式结构,沿光传播方向波导结构依次为第一多模干涉仪、第一模斑转换器、电光移相臂、第二模斑转换器和第二多模干涉仪;
所述第一多模干涉仪以及第二多模干涉仪设置在所述硅薄膜层,并在所述第一多模干涉仪的一臂附近沉积金属薄膜作为热电极;
所述的第一模斑转换器、电光移相臂和第二模斑转换器设置在所述氧化硅缓冲层和硅薄膜层,并在所述电光移相臂附近的硅薄膜层上沉积金属薄膜作为行波电极。
硅薄膜层用于光的传输;铌酸锂薄膜层用于光的调制。光通过多模干涉仪均分为两束光,两束光经过模斑转换器进入电光调制臂,之后经过多模干涉仪耦合出光。其中,热电极在多模干涉仪的一臂附近,作为电光调制器的偏置电极,加载偏置电压,抑制铌酸锂调制器由于电荷弛豫产生的偏置漂移。行波电极在电光移相臂附近,加载高速的微波信号。从上到下,以此为地极-信号极-地极,地极在电光移相臂的两侧,信号极在两个电光移相臂的中间。在所述的多模干涉仪中,光波的能量主要局限在硅波导中;在所述的电光移相臂中,光波的能量主要局限在铌酸锂薄膜层中,小部分能量局限在硅波导和氧化硅层中。所述的模斑转换器实现光从多模干涉仪到电光移相臂之间光传输。
本发明提出一种基于硅-氧化硅-铌酸锂晶圆的高带宽电光调制器的集成方法,主要包括硅波导刻蚀、氧化硅缓冲层刻蚀、氧化硅包层的沉积和金属薄膜的沉积。所述的硅波导刻蚀包括两次刻蚀,最终形成常规硅波导与薄硅波导;所述的氧化硅缓冲层刻蚀形成氧化硅波导。所述的常规的硅波导形成多模干涉仪;所述的常规硅波导、氧化硅波导与薄硅波导形成模斑转换器;所述的薄硅波导与氧化硅波导和铌酸锂薄膜层形成电光移相臂。所述的氧化硅包层通过沉积工艺制备在多模干涉仪上;所述的热电极与行波电极通过金属沉积制备得到。
本发明的优点在于:
1.采用硅-氧化硅-铌酸锂晶圆制备电光调制器,可以同时发挥硅波导高集成度的优势与铌酸锂线性电光调制的优势
2.在硅晶圆和铌酸晶圆之间采用氧化硅晶圆作为缓冲层,能够避免硅晶圆与铌酸锂晶圆之间的热失配,提高晶圆的键合强度。除此以外,通过对缓冲层的刻蚀,可以形成氧化硅波导,氧化硅波导尺寸为波导设计提供了新的自由度。
3.利用薄硅波导与氧化硅波导和铌酸锂层形成电光移相臂,避免铌酸锂的刻蚀污染。
4.利用热电极作为偏置电极,抑制铌酸锂调制器由于电荷弛豫产生的偏置漂移。
5.利用所述的常规硅波导、氧化硅波导和薄硅波导形成模斑转换器,具有较大的传输效率。
6.利用氧化硅包层沉积在电光移相臂附近能够进一步降低金属对光的吸收损耗;利用氧化硅包层沉积在多模干涉仪或者热光移相臂附近,能够隔离常规硅波导与行波电极,使得行波电极与常规硅波导进行交叉,降低金属吸收损耗。
附图说明
图1为本发明硅-氧化硅-铌酸锂高带宽电光调制器的结构图,其中(a)为三维图,(b)为俯视图。
图2为本发明硅-氧化硅-铌酸锂高带宽电光调制器中模斑转换器的结构图,其中(a)为侧面图,(b)为俯视图。
图3为本发明硅-氧化硅-铌酸锂高带宽电光调制器中波导的截面图,其中(a)为热电极以及多模干涉仪一臂的截面图,(b)为行波电极以及电光移相臂的截面图,该移相臂被空气包覆。
图4为本发明另一实施例硅-氧化硅-铌酸锂高带宽电光调制器中波导的截面图为另一实施例的电光移相臂的结构图,其中(a)为模斑转换器的侧面图,(b)为行波电极以及电光移相臂的截面图。该模斑转换器与电光移相臂被氧化硅包层包覆。
具体实施方式
下面结合附图和实施例对本发明作详细说明,给出了详细的实施方式和结构,但本发明的保护范围不限于下述的实施例。
图1所示为本发明硅-氧化硅-铌酸锂电光调制器的结构。其中(a)为电光调制器的三维图,电光调制器从下到上依次为硅衬底层1、氧化硅隔离层2、铌酸锂薄膜层3、氧化硅缓冲层4、硅薄膜层5、氧化硅包层6、行波电极7以及热电极8。其中(b)为电光调制器的平面图,所述器件从左到右的波导结构依次为第一多模干涉仪5.1、第一模斑转换器5.2、电光移相臂5.3、第二模斑转换器5.4、第二多模干涉仪5.5。所述的电光移相臂附近的是行波电极7;所述的热电极8在第一多模干涉仪5.1的一臂附近。光通过第一多模干涉仪5.1后,上臂的光相位受到热电极8的控制。其后,两臂的光通过第一模斑转换器5.2,进入到电光移相臂5.3,其相位受到行波电极7的控制。最后,通过第二模斑转换器5.4,光波传输至第二多模干涉仪5.5,最后合束输出。热电极8为一个直线结构;所行波电极7由两端的弯曲部和中间的直线部构成,使得微波的方向有九十度的改变,以避免光纤端口与射频端口在同一方向上。行波电极7的弯曲部分别与多模干涉仪5.1、5.5产生交叉,为了降低行波电极7对光的吸收损耗,在多模干涉仪5.1、5.5上方设置了氧化硅包层6。
图2所示为本发明硅-氧化硅-铌酸锂的高带宽电光调制器中模斑转换器的结构图。其中(a)为模斑转换器的侧面图,本发明模斑转换器从下到上,薄膜结构为硅衬底层1、氧化硅隔离层2、铌酸锂薄膜层3、氧化硅波导4.1、常规的硅波导5.2.1和薄硅波导5.2.2。(b)为模斑转换器的俯视图,本实施例中,模斑转换器由氧化硅波导4.1、常规硅波导5.2.1以及薄硅波导5.2.2组成,常规硅波导5.2.1通过硅薄膜层5全部刻蚀形成,薄硅波导5.2.2通过常规硅波导5.2.1部分刻蚀形成,氧化硅波导4.1通过一次氧化硅缓冲层刻蚀形成。所述的常规的硅波导5.2.1的宽度从左到右逐渐减少;薄硅波导5.2.2与宽度可以逐渐减少也可以保持不变;氧化硅波导的宽度保持不变。
图3为本发明硅-氧化硅-铌酸锂高带宽电光调制器中波导的截面图,其中(a)为热电极以及第一多模干涉仪一臂的截面图,从下到上为硅衬底层1、氧化硅隔离层2、铌酸锂薄膜层3、氧化硅缓冲层4、常规硅波导5.1.1、氧化硅包层6以及热电极8。第一多模干涉仪5.1和第二多模干涉仪5.5,由常规硅波导5.1.1组成,常规硅波导5.1.1通过硅薄膜层5全部刻蚀形成。(b)为行波电极以及电光移相臂的截面图,从下到上为硅衬底层1、氧化硅隔离层2、铌酸锂薄膜层3、氧化硅缓冲层4以及氧化硅波导4.1、薄硅波导5.3.1以及行波电极7。所述电光移相臂5.3由氧化硅波导4.1以及薄硅波导5.3.1组成,氧化硅波导4.1通过一次氧化硅缓冲层刻蚀形成,薄硅波导5.3.1通过硅薄膜层5刻蚀形成。行波电极7下有氧化硅缓冲层4,其厚度为0nm~500nm。薄硅波导5.3.1下有氧化硅波导4.1,其厚度为0nm~500nm。
图4所示为本发明硅-氧化硅-掺铒铌酸锂电光调制器另一实施例的波导的结构图。其中(a)为模斑转换器的侧面图,本实施例模斑转换器从下到上,薄膜结构为硅衬底层1、氧化硅隔离层2、铌酸锂薄膜层3、氧化硅波导4.1、常规硅波导5.2.1和薄硅波导5.2.2。第一模斑转换器5.2被氧化硅包层6覆盖。(b)为电光移相臂的截面图,本实施例中电光移相臂从下到上为硅衬底层1、氧化硅隔离层2、铌酸锂薄膜层3、氧化硅缓冲层4、氧化硅波导4.1、行波电极6、薄硅波导5.3.1。行波电极7下有氧化硅缓冲层4,其厚度为0nm~500nm。薄硅波导5.3.1下有氧化硅波导4.1,其厚度为0nm~500nm。所述的薄硅波导5.3.1上被氧化硅包层6覆盖。
在器件制备方面可以采用以下步骤进行:
步骤一:选取硅-氧化硅-铌酸锂晶片(晶片为晶圆在切割后,从晶圆上取下的方片)。从下到上薄膜结构为硅衬底、氧化硅隔离层、铌酸锂层、氧化硅缓冲层、硅层;利用光刻技术与干法刻蚀技术对晶片进行套刻。分别对硅层进行全部刻蚀与部分刻蚀,得到多模干涉仪5.1和多模干涉仪5.5;
步骤二:利用光刻技术与干法刻蚀技术对步骤二所述晶片进行刻蚀。对氧化硅缓冲层进行刻蚀,得到模斑转换器5.2、模斑转换器5.4和电光移相臂5.3。
步骤三:利用薄膜沉积技术在步骤三所述晶片上进行氧化硅包层的沉积,沉积区域为多模干涉仪5.1和多模干涉仪5.5区域。而根据另一实施例,沉积区域为多模干涉仪5.1和5.5区域、模斑转换器5.2和5.4区域和电光移相臂5.3区域。
步骤四:利用薄膜沉积技术在步骤四所述晶片上沉积金属作为热电极8。
步骤五:利用薄膜沉积技术在步骤五所述晶片上沉积金属作为行波电极7。
Claims (9)
1.硅-氧化硅-铌酸锂高带宽电光调制器,其特征在于,晶圆结构从上到下依次为硅衬底层(1)、氧化硅隔离层(2)、铌酸锂薄膜层(3)、氧化硅缓冲层(4)与硅薄膜层(5);
所述电光调制器为推挽式结构,沿光传播方向波导结构依次为第一多模干涉仪(5.1)、第一模斑转换器(5.2)、电光移相臂(5.3)、第二模斑转换器(5.4)和第二多模干涉仪(5.5);
所述第一多模干涉仪(5.1)以及第二多模干涉仪(5.5)设置在所述硅薄膜层(5),并在所述第一多模干涉仪(5.1)的一臂附近沉积金属薄膜作为热电极(8);
所述的第一模斑转换器(5.2)、电光移相臂(5.3)和第二模斑转换器(5.4)设置在所述氧化硅缓冲层(4)和硅薄膜层(5),并在所述电光移相臂(5.3)附近沉积金属薄膜作为行波电极(7)。
2.根据权利要求1所述的硅-氧化硅-铌酸锂高带宽电光调制器,其特征在于,所述行波电极(7)由两端的弯曲部和中间的直线部构成,所述行波电极(7)的弯曲部分别与所述第一多模干涉仪(5.1)和第二多模干涉仪(5.5)交叉。
3.根据权利要求1或2所述的硅-氧化硅-铌酸锂高带宽电光调制器,其特征在于,在所述第一多模干涉仪(5.1)和第二多模干涉仪(5.5)上沉积氧化硅包层(6)。
4.根据权利要求1或2所述的硅-氧化硅-铌酸锂高带宽电光调制器,其特征在于,在所述第一模斑转换器(5.2)和第二模斑转换器(5.4)区域上沉积氧化硅包层(6),在所述电光移相臂(5.3)区域上沉积氧化硅包层(6)。
5.根据权利要求1-4任一所述的硅-氧化硅-铌酸锂晶圆的高带宽电光调制器,其特征在于,所述的氧化硅晶圆作为缓冲层,避免硅晶圆与铌酸锂晶圆之间的热失配,提高键合强度。
6.一种硅-氧化硅-铌酸锂高带宽电光调制器的集成方法,其特征在于,包括如下步骤:
步骤1.在硅-氧化硅-铌酸锂晶片上,对硅薄膜层进行全部或部分刻蚀,得到第一多模干涉仪(5.1)和第二多模干涉仪(5.5);
步骤2.对晶片上氧化硅缓冲层进行刻蚀,得到第一模斑转换器(5.2)、第二模斑转换器(5.4)和电光移相臂(5.3);
步骤3.在所述第一多模干涉仪(5.1)和第二多模干涉仪(5.5)区域沉积氧化硅包层;
步骤4.在所述第一多模干涉仪(5.1)的一臂附近沉积金属薄膜作为热电极(8):
步骤5.在所述电光移相臂(5.3)的附近区域沉积金属薄膜作为行波电极(7)。
7.根据权利要求6所述的硅-氧化硅-铌酸锂高带宽电光调制器的集成方法,其特征在于,所述第一多模干涉仪(5.1)和第二多模干涉仪(5.4),由通过硅薄膜层(5)全部刻蚀形成的常规硅波导组成。
8.根据权利要求6所述的硅-氧化硅-铌酸锂高带宽电光调制器的集成方法,其特征在于,所述第一模斑转换器(5.2)和第二模斑转换器(5.4)包括对氧化硅缓冲层(4)一次刻蚀形成的氧化硅波导(4.1)、对硅薄膜层(5)全部刻蚀形成的常规硅波导,以及对该常规硅波导部分刻蚀形成的薄硅波导。
9.根据权利要求6所述的硅-氧化硅-铌酸锂高带宽电光调制器的集成方法,其特征在于,所述电光移相臂(5.3)包括对氧化硅缓冲层(4)一次刻蚀形成的氧化硅波导(4.1),以及对硅薄膜层(5)刻蚀形成的薄硅波导。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210321287.2A CN116841063A (zh) | 2022-03-24 | 2022-03-24 | 硅-氧化硅-铌酸锂高带宽电光调制器及集成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210321287.2A CN116841063A (zh) | 2022-03-24 | 2022-03-24 | 硅-氧化硅-铌酸锂高带宽电光调制器及集成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116841063A true CN116841063A (zh) | 2023-10-03 |
Family
ID=88173098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210321287.2A Pending CN116841063A (zh) | 2022-03-24 | 2022-03-24 | 硅-氧化硅-铌酸锂高带宽电光调制器及集成方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116841063A (zh) |
-
2022
- 2022-03-24 CN CN202210321287.2A patent/CN116841063A/zh active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101620296B (zh) | 一种光电衬底上的高约束波导 | |
CN110161625B (zh) | 硅基铌酸锂薄膜电光调制器阵列集成的方法 | |
US11940707B2 (en) | High-speed and low-voltage electro-optical modulator based on lithium niobate-silicon wafer | |
US20200363693A1 (en) | Silicon-based lithium niobate film electro-optic modulator array and integration method thereof | |
CN109387956B (zh) | 基于狭缝波导的石墨烯电光调制器 | |
CN105954892B (zh) | 一种基于SOI的Si-PLZT异质结结构的混合型电光环形调制器 | |
CN114019703A (zh) | 一种薄膜铌酸锂双平行电光调制器集成芯片 | |
CN105974614A (zh) | 一种采用脊形波导的马赫曾德光调制器晶片结构及其制备工艺 | |
CN111897146A (zh) | 基于铌酸锂薄膜的光子晶体微环调制器芯片 | |
WO2022100096A1 (zh) | 光波导器件及其制备方法、电光调制器 | |
CN112764246B (zh) | 一种薄膜铌酸锂电光调制器及其制备方法 | |
CN113848609A (zh) | 光子集成耦合结构、光子集成器件 | |
CN114583420A (zh) | 一种移相器及其制造方法、半导体器件、光通信系统 | |
CN115857091A (zh) | 一种铌酸锂薄膜mmi起偏分束器 | |
CN115598767A (zh) | 一种cwdm光发送芯片 | |
CN115718381A (zh) | 铌酸锂光收发器及其形成方法 | |
CN115857201A (zh) | 一种基于薄膜铌酸锂密集双波导的偏振无关的电光调制器 | |
CN114460684B (zh) | T结构电极背面光纤连接的硅基薄膜铌酸锂调制器及方法 | |
CN112363331B (zh) | 一种硅基铌酸锂混合电光调制器 | |
CN117031851A (zh) | 基于拓扑慢光波导的薄膜铌酸锂电光调制器 | |
JPH06222229A (ja) | 光導波路素子とその製造方法 | |
CN116841063A (zh) | 硅-氧化硅-铌酸锂高带宽电光调制器及集成方法 | |
CN116520493A (zh) | 一种基于薄膜铌酸锂的te模和tm模分离的偏振分束器芯片 | |
JPH06289346A (ja) | 誘電体光導波路素子およびその製造方法 | |
CN115755279A (zh) | 片上光放大耦合器及其形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |