WO2021168844A1 - 电子元件的电连接方法及其相关装置 - Google Patents
电子元件的电连接方法及其相关装置 Download PDFInfo
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- WO2021168844A1 WO2021168844A1 PCT/CN2020/077302 CN2020077302W WO2021168844A1 WO 2021168844 A1 WO2021168844 A1 WO 2021168844A1 CN 2020077302 W CN2020077302 W CN 2020077302W WO 2021168844 A1 WO2021168844 A1 WO 2021168844A1
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- electronic components
- contact electrode
- protective film
- electrical connection
- connection method
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/1318—Molybdenum [Mo] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax, thiol
- H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan
Definitions
- the present disclosure relates to the field of display technology, in particular to an electrical connection method of electronic components and related devices.
- Mini-Light Emitting Diode Mini-LED
- the electronic components need to be bound to the drive backplane through a binding material. Because the contact electrodes on the drive backplane are easily oxidized, the contact electrodes and the binding The electrical contact of the specified material is poor. Therefore, the oxide on the surface of the contact electrode needs to be removed before the electronic component is bound to the contact electrode.
- the electrical connection method of electronic components provided by the implementation of the present disclosure includes:
- the driving backplane includes a plurality of contact electrodes
- a plurality of electronic components are transferred to the positions of the corresponding contact electrodes, each of the electronic components is bound to the corresponding contact electrode, and each of the electronic components is connected to the corresponding contact electrode. Before completing the binding, the anti-oxidation protective film at each of the contact electrode positions is removed.
- the forming an anti-oxidation protective film on the contact electrode includes:
- the placing the drive backplane in an anti-oxidation protection solution includes:
- the coating a binding material at a position of the anti-oxidation protective film corresponding to each of the contact electrodes includes:
- the binding each of the electronic components with the corresponding contact electrode includes:
- each of the electronic components is bound to the corresponding contact electrode.
- the binding material is doped with a reactant for removing the anti-oxidation protective film
- the binding each of the electronic components with the corresponding contact electrodes includes:
- the reactant includes: rosin resin or isophthalic acid.
- the oxidation protection film after the oxidation protection film is formed on the contact electrode, before the bonding material is coated at the position of the oxidation protection film corresponding to each of the contact electrodes During the set time, it also includes:
- the driving backplane after forming the anti-oxidation protective film is placed in a reactant for removing the anti-oxidation protective film, and soaked for 60-120 seconds.
- the reactant includes: isophthalic acid, alcohol or dilute acid.
- an embodiment of the present disclosure also provides a backlight module, including a driving backplane, and electronic components on the driving backplane, and the electronic components are connected to the driving backplane using the above-mentioned electrical connection method.
- the contact electrodes in the board are bound and connected;
- the electronic component includes a micro light emitting diode;
- the backlight module also includes an optical film layer on the light emitting side of the micro light emitting diode.
- an embodiment of the present disclosure also provides a display panel, including: a driving backplane, and a plurality of electronic components on the driving backplane, the electronic components adopting the above-mentioned electrical connection method and the driving The contact electrodes in the backplane are bonded and connected; the electronic components include micro light emitting diodes.
- an embodiment of the present disclosure also provides a display device, including: the above-mentioned backlight module and a liquid crystal display panel located on the light-emitting side of the backlight module; or, the above-mentioned display panel.
- FIG. 1 is a flowchart of an electrical connection method of an electronic component provided by an embodiment of the disclosure
- FIG. 2 is a schematic diagram of the structure of the driving backplane in the embodiment of the disclosure.
- FIG. 3 is a schematic diagram of the structure of forming an anti-oxidation protective film in an embodiment of the disclosure
- FIG. 5 is a schematic diagram of the structure of the driving backplane after transferring electronic components in an embodiment of the disclosure
- FIG. 6 is a schematic diagram of the structure of the driving backplane after being bound with the electronic component in the embodiment of the disclosure.
- embodiments of the present invention provide an electrical connection method for electronic components and related devices.
- the nickel-gold process can remove the oxide on the surface of the contact electrode and add a layer of highly oxidation-resistant alloy material. For example, a 2 to 3 ⁇ m thick nickel-gold layer can be deposited to protect the contact electrode.
- the nickel-gold process has the problem of insufficient process control accuracy, and it is inevitable that there are defects such as the peeling of the nickel-gold layer; and the nickel-gold process is a traditional electrochemical process and has a certain degree of pollution.
- the embodiment of the present disclosure provides an electrical connection method of an electronic component, as shown in FIG. 1, including:
- a driving backplane 20 is provided; the driving backplane 20 includes a plurality of contact electrodes 201;
- an anti-oxidation protective film 21 is formed on the contact electrode 201;
- the above-mentioned electrical connection method for electronic components provided by the embodiments of the present disclosure can prevent the contact electrode from being oxidized for a long time by forming an anti-oxidation protective film on the contact electrode, and ensure a good connection between the contact electrode and the binding material.
- the connection and can omit the nickel-gold process, simplify the process.
- the above-mentioned electronic components provided by the embodiments of the present disclosure may be miniature light-emitting diodes, or electronic components with other electrode pins, which are not limited here.
- the micro light emitting diode may include: a micro light emitting diode (Micro Light Emitting Diode, Micro LED) or a mini light emitting diode (mini Light Emitting Diode, mini-LED), etc.
- a micro light emitting diode Micro Light Emitting Diode, Micro LED
- mini light emitting diode mini Light Emitting Diode, mini-LED
- the contact electrode 201 can be mainly made of copper material, and, in order to increase the adhesion of the contact electrode 201, the contact electrode 201 It may also include an adhesion layer, which may include materials such as molybdenum (Mo), titanium (Ti), molybdenum-titanium alloy (MoTi), or molybdenum-niobium alloy (MoNb), that is, the contact electrode 201 includes an adhesion layer and The laminated structure of the copper layer on the side of the adhesive layer away from the substrate of the drive backplane.
- the driving backplane 20 may further include a driving circuit electrically connected to the contact electrode 201, and the driving circuit may control the electronic components to implement corresponding functions by applying a driving signal to the contact electrode 201.
- the above-mentioned electronic component may generally include an epitaxial structure 231 and positive and negative electrodes 232.
- the electronic component 23 is transferred to the corresponding contact electrode 201, and the positive and negative electrodes 232 and the corresponding contact electrode 201 need to be transferred. Point and touch.
- the above-mentioned step S102 may include:
- the above-mentioned anti-oxidation protection solution can be used to react with the oxide on the surface of the contact electrode, so that the oxide on the surface of the contact electrode can be removed to ensure a good connection between the contact electrode and the binding material.
- An anti-oxidation protective film is formed to protect the contact electrode. As shown in FIG. 3, since the anti-oxidation protective film 21 is obtained by the reaction of an anti-oxidation protective solution and oxide, the anti-oxidation protective film 21 is only formed on the surface of the contact electrode 201 .
- the drive backplane can be placed in a container with an anti-oxidation protection solution, and the equipment and process for making the anti-oxidation protection film are relatively simple, and the production cost is low.
- the drive backplane By immersing the drive backplane in the anti-oxidation protection solution for 30 to 90 seconds, it can be formed The anti-oxidation protective film.
- placing the driving backplane in the anti-oxidation protection solution includes:
- the benzotriazole BTAH material can complex reaction with the oxide on the surface of the contact electrode.
- copper Take copper as an example on the surface of the contact electrode. Since the oxidation of copper is related to factors such as temperature, ambient gas and humidity, the temperature of copper is relatively high. Under the conditions, the surface will be oxidized to form cuprous oxide, and the cuprous oxide will gradually oxidize to cuprous oxide in humid air. In the actual process of making contact electrodes, the temperature is relatively high, so cuprous oxide is formed on the surface of the contact electrodes. In the actual process, the humidity in the environment of the reaction chamber is controlled, and the cuprous oxide is hardly further caused. It is oxidized to copper oxide, so the main component of the surface of the contact electrode is cuprous oxide.
- the benzotriazole BTAH material can undergo a complex reaction with Cu 2 O to form a Cu-BTA complex of Cu 2 O, thereby removing the oxide on the surface of the contact electrode, and the formed complex can be Play a protective effect on the contact electrode, the specific reaction formula is as follows:
- H 2 O is generated after the complexation reaction, which can be washed with water and then dried to remove the generated water to prevent the generated water from adversely affecting the contact electrode.
- the overall anti-oxidation protective film is slightly negatively charged, while the contact electrode containing Cu 2 O surface is positively charged, so the two pass static electricity. Adsorption, the anti-oxidation protective film can be adsorbed to the surface of the contact electrode.
- anti-oxidation protective film in addition to benzotriazole BTAH, other materials can also be used to make the anti-oxidation protective film.
- other ink materials can be used.
- the material of the anti-oxidation protective film is not limited here.
- the performance of the anti-oxidation protective film formed on the contact electrode is better, so that the contact electrode will not be oxidized for a long time (generally up to three months). Therefore, in the electronic component Before the bonding with the contact electrode is completed, sufficient operating time can be reserved for the coating process of the bonding material and the bonding process to increase the flexibility of mass production.
- the above-mentioned step S103 may include:
- tin paste is applied to the position of the anti-oxidation protective film.
- the solder paste is used as the bonding material.
- binding each electronic component with the corresponding contact electrode includes:
- each electronic component is bound to the corresponding contact electrode.
- a plurality of electronic components are transferred to the positions of the corresponding contact electrodes, the positive and negative electrodes 232 of the electronic components are brought into contact with the binding materials at the corresponding positions, and then the driving backplane is placed in the equipment of the reflow soldering process, After heating air or nitrogen to a sufficiently high temperature, blow it to the above-mentioned driving backplane, and the temperature reaches 217° or more, and the binding material can melt. After the binding material is cooled, the electronic component and the corresponding position can be realized. Bonding of binding materials. With the reflow soldering process, the temperature is easy to control, and the oxidation of the contact electrode can be avoided during the reflow soldering process, and the production cost is relatively low.
- the drive backplane can also be optically inspected to detect whether the shape of the binding material meets the requirements.
- the binding material is doped with a reactant for removing the anti-oxidation protective film
- Bind each electronic component with the corresponding contact electrode including:
- the binding material is mixed with a reactant for removing the anti-oxidation protective film, after the binding material is coated in the above step S103, the reactant starts to react with the anti-oxidation protective film.
- the anti-oxidation protective film is partially removed.
- the removal process of the anti-oxidation protective film described in the above embodiment is compatible with the bonding process of electronic components, and no additional equipment is required.
- the above-mentioned reactant needs to have active groups to remove the anti-oxidation protective film.
- the above-mentioned reactant may be a material containing carboxylic acid (RCOOH), and the specific reaction formula for removing the anti-oxidation protective film may be:
- the anti-oxidation protective film is thin, and the boiling point and flash point of BTA are low, about 150-200 degrees, and the temperature of the reflow soldering process is about 250 degrees, the anti-oxidation protective film, reactants and reaction products can be completely removed .
- the above-mentioned reactant may include: rosin resin or isophthalic acid. Both rosin resin and isophthalic acid are organic materials, and it is easier to mix with the binding material when organic materials are used as the above-mentioned reactants.
- the bonding material generally includes flux, which can promote the bonding process between the light-emitting diode chip and the contact electrode by the bonding material, so the above-mentioned reactants can be incorporated into the flux; During the reflow soldering process, the flux will also volatilize.
- the flux is a mixture usually made of rosin as the main component. It is an auxiliary material to ensure the smooth progress of the soldering process.
- the main raw material is an organic solvent (commonly used are ethanol, propanol, butanol; acetone, toluene, isobutyl methyl, etc.) Ketones; ethyl acetate, butyl acetate), rosin resin and its derivatives, synthetic resin surfactants, organic acid activators, corrosion inhibitors, cosolvents, film-forming agents, etc., that is to say, the flux is a variety of solids
- the ingredients are dissolved in various liquids to form a uniform and transparent mixed solution.
- step S102 after step S102 and within a set time before step S103, it may further include:
- the driving backplane after forming the anti-oxidation protective film is placed in a reactant for removing the anti-oxidation protective film, and soaked for 60 to 120 seconds.
- the anti-oxidation protective film can protect the contact electrode and prevent the contact electrode from being oxidized. Remove the anti-oxidation protective film within the set time before coating the binding material. Because the contact electrode is exposed for a short time, the oxide film formed on the surface of the contact electrode is thinner. Coat the binding material on the contact electrode as soon as possible. It has little effect on the connection performance between the binding material and the contact electrode. In specific implementation, within 24 hours of removing the anti-oxidation protective film, coating the binding material on the contact electrode will not affect the connection performance between the binding material and the contact electrode.
- the driving backplane after forming the anti-oxidation protective film is placed in the reactant and soaked for 60-120s to remove the anti-oxidation protective film.
- the process equipment is simple and the cost is low.
- the anti-oxidation protective film is soaked in the reactant for 60 to 120 seconds to ensure that the anti-oxidation protective film can be completely removed.
- the above-mentioned reactant may include: isophthalic acid, alcohol, or dilute acid.
- the anti-oxidation protective film can be easily removed by immersing the anti-oxidation protective film in an organic solvent (for example, isophthalic acid) or a dilute acid solution, and the process is simple and the cost is low.
- the specific reaction formula for removing the anti-oxidation protective film can be:
- an embodiment of the present invention also provides a backlight module, including: a driving backplane, a plurality of electronic components located on the driving backplane, the electronic components are in contact with the driving backplane using the above-mentioned electrical connection method Electrode binding connection;
- the above-mentioned electronic components include miniature light-emitting diodes
- the above-mentioned backlight module also includes an optical film layer on the light-emitting side of the miniature light-emitting diode.
- the miniature light-emitting diode is bound and connected with the contact electrode in the driving backplane by the above-mentioned electrical connection method, so the connection performance of the miniature light-emitting diode and the contact electrode is better.
- optical film layers such as diffuser sheets, prism sheets, etc. can also be provided. Therefore, the backlight module can provide the liquid crystal display panel with light with better uniformity.
- an embodiment of the present invention also provides a display panel, including: a driving backplane, and a plurality of electronic components on the driving backplane. Electrode binding connection;
- the above-mentioned electronic components include miniature light-emitting diodes.
- the miniature light-emitting diode is bound and connected with the contact electrode in the driving backplane by the above-mentioned electrical connection method, so the connection performance of the miniature light-emitting diode and the contact electrode is better.
- the addressing control and individual driving of each pixel can be realized, thereby realizing screen display.
- the above-mentioned micro light emitting diode may be a mini LED, and the above-mentioned display panel may be applied to a large-size display screen or a display screen with a lower resolution requirement.
- an embodiment of the present invention also provides a display device including the above-mentioned backlight module and a liquid crystal display panel located on the light-emitting side of the backlight module, that is, the display device may be a liquid crystal display device; or, the above-mentioned display device Including the above-mentioned display panel, that is, the display device may also be an LED display device.
- the display device can be applied to any products or components with display functions such as mobile phones, tablet computers, televisions, monitors, notebook computers, digital photo frames, and navigators.
- the implementation of the display device can refer to the implementation of the above-mentioned backlight module (or display panel), and the repetition will not be repeated.
- the contact electrode by forming an anti-oxidation protective film on the contact electrode, the contact electrode can be prevented from being oxidized for a long time, ensuring that the contact electrode is bound to
- the materials can be well connected, and the nickel-gold process can be omitted, and the process can be simplified.
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Abstract
Description
Claims (12)
- 一种电子元件的电连接方法,其中,包括:提供一驱动背板;所述驱动背板包括多个接触电极;在所述接触电极之上形成防氧化保护膜;在所述防氧化保护膜对应于各所述接触电极的位置处涂覆绑定材料;将多个电子元件转移到对应的所述接触电极的位置处,将各所述电子元件与对应的所述接触电极进行绑定,并且,在将各所述电子元件与对应的所述接触电极完成绑定之前,去除各所述接触电极位置处的所述防氧化保护膜。
- 如权利要求1所述的电连接方法,其中,所述在所述接触电极之上形成防氧化保护膜,包括:将所述驱动背板置于防氧化保护溶液中,并浸泡30~90s。
- 如权利要求2所述的电连接方法,其中,所述将所述驱动背板置于防氧化保护溶液中,包括:将所述驱动背板置于苯并三氮唑的溶液中。
- 如权利要求1所述的电连接方法,其中,所述在所述防氧化保护膜对应于各所述接触电极的位置处涂覆绑定材料,包括:在所述防氧化保护膜的位置处涂覆锡膏。
- 如权利要求4所述的电连接方法,其中,所述将各所述电子元件与对应的所述接触电极进行绑定,包括:采用回流焊工艺,将各所述电子元件与对应的所述接触电极进行绑定。
- 如权利要求1所述的电连接方法,其中,所述绑定材料中掺有用于去除所述防氧化保护膜的反应剂;所述将各所述电子元件与对应的所述接触电极进行绑定,包括:在将各所述电子元件与对应的所述接触电极进行绑定的过程中,将所述反应剂与所述防氧化保护膜的产物及多余的所述反应剂挥发。
- 如权利要求6所述的电连接方法,其中,所述反应剂,包括:松香树 脂或间苯二甲酸。
- 如权利要求1所述的电连接方法,其中,所述在所述接触电极之上形成防氧化保护膜之后,在所述防氧化保护膜对应于各所述接触电极的位置处涂覆绑定材料之前的设定时间内,还包括:将形成所述防氧化保护膜之后的所述驱动背板置于用于去除所述防氧化保护膜的反应剂中,并浸泡60~120s。
- 如权利要求8所述的电连接方法,其中,所述反应剂,包括:间苯二甲酸、酒精或稀酸。
- 一种背光模组,其中,包括:驱动背板,位于所述驱动背板之上的多个电子元件,所述电子元件采用如权利要求1~9任一项所述的电连接方法与所述驱动背板中的接触电极绑定连接;所述电子元件包括微型发光二极管;所述背光模组还包括位于所述微型发光二极管出光侧的光学膜层。
- 一种显示面板,其中,包括:驱动背板,以及位于所述驱动背板之上的多个电子元件,所述电子元件采用如权利要求1~9任一项所述的电连接方法与所述驱动背板中的接触电极绑定连接;所述电子元件包括微型发光二极管。
- 一种显示装置,其中,包括:如权利要求10所述的背光模组以及位于所述背光模组的出光侧的液晶显示面板;或,如权利要求11所述的显示面板。
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CN202080000204.9A CN113711377A (zh) | 2020-02-28 | 2020-02-28 | 电子元件的电连接方法及其相关装置 |
PCT/CN2020/077302 WO2021168844A1 (zh) | 2020-02-28 | 2020-02-28 | 电子元件的电连接方法及其相关装置 |
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JP2010067654A (ja) * | 2008-09-09 | 2010-03-25 | Sony Corp | 半導体装置の製造方法 |
CN103582285A (zh) * | 2012-07-31 | 2014-02-12 | 厦门中天启航电子科技有限公司 | 一种ito导电膜汇流电极及其制作方法 |
CN106684234A (zh) * | 2017-01-20 | 2017-05-17 | 深圳市润芯科技有限公司 | Led晶片封装基板、其制备方法及led光源 |
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US20120067619A1 (en) * | 2009-06-01 | 2012-03-22 | Masamichi Yamamoto | Connection method, connection structure, and electronic device |
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JP2010067654A (ja) * | 2008-09-09 | 2010-03-25 | Sony Corp | 半導体装置の製造方法 |
CN103582285A (zh) * | 2012-07-31 | 2014-02-12 | 厦门中天启航电子科技有限公司 | 一种ito导电膜汇流电极及其制作方法 |
CN106684234A (zh) * | 2017-01-20 | 2017-05-17 | 深圳市润芯科技有限公司 | Led晶片封装基板、其制备方法及led光源 |
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