WO2021159587A1 - 光阻剥离装置及光阻剥离方法 - Google Patents

光阻剥离装置及光阻剥离方法 Download PDF

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Publication number
WO2021159587A1
WO2021159587A1 PCT/CN2020/080779 CN2020080779W WO2021159587A1 WO 2021159587 A1 WO2021159587 A1 WO 2021159587A1 CN 2020080779 W CN2020080779 W CN 2020080779W WO 2021159587 A1 WO2021159587 A1 WO 2021159587A1
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Prior art keywords
stripping
photoresist
liquid
tank
substrate
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PCT/CN2020/080779
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English (en)
French (fr)
Inventor
张月红
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Tcl华星光电技术有限公司
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Priority to US16/764,887 priority Critical patent/US11189504B2/en
Publication of WO2021159587A1 publication Critical patent/WO2021159587A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Definitions

  • the invention relates to the field of display technology, in particular to a photoresist stripping device and a photoresist stripping method.
  • metals with lower resistivity are needed to make electronic transmission wires.
  • metal copper can meet the requirements of high conductivity and relatively low price; but due to its adhesion to the glass substrate Poor performance, and the copper element is easy to diffuse into the oxygen silicon or nitrogen silicon film, so a very thin buffer layer will be added between it and the glass substrate.
  • the material of the buffer layer is molybdenum or molybdenum alloy.
  • TFT-LCD thin film transistor liquid crystal display
  • OLED organic electro-laser display
  • other micro-circuit patterns goes through the following processes.
  • copper-molybdenum or its alloys are formed on the glass substrate or insulating layer with a certain thickness of film layer, and then the pattern is formed through the photoresist coating exposure and development process, and then the metal outside the pattern is etched away with a copper acid etching solution, and then again The photoresist is removed with the photoresist stripping solution, and then the patterning of the metal film layer is formed to form an electrode circuit.
  • metals have different electrode potentials in different solution systems, and the electrode potentials of metallic copper and molybdenum in the same solution system are also different.
  • the electrode potential of metallic molybdenum is lower than that of metallic copper. Due to the difference in the electrode potential of copper and molybdenum metals, the two metals in contact in the conductive solution will form galvanic corrosion, where molybdenum serves as the anode and copper serves as the cathode, and the etching of molybdenum will be accelerated. As shown in FIG.
  • the molybdenum in the lower layer is also being corroded.
  • the gap 23 is getting larger and larger, the anion and oxygen concentration gradient difference inside and outside the gap becomes smaller, and the driving force of crevice corrosion in the hole becomes smaller.
  • the difference between the anion and oxygen concentration in the deepest part of the crevice is the largest compared to the outside world, where the corrosion activity is the strongest, and the crevice corrosion at a new point is formed and spreads to the depths, and new pores will be formed.
  • the purpose of the present invention is to provide a photoresist stripping device and a photoresist stripping method.
  • MOF material By adding MOF material to the filter element of the filter device, the material can capture oxygen in the solution under visible light, reduce the dissolved oxygen in the solution, and then Reduce the difference in oxygen concentration inside and outside the gap, alleviate the hollowing out of copper caused by the substrate stripping the photoresist; further, when it reaches saturation, it can be heated or ultraviolet light to release the adsorbed oxygen, and then it can be recycled Use filter material.
  • a photoresist peeling device which includes: a conveyor belt for carrying and conveying a substrate to be peeled off a photoresist layer; a liquid storage tank for storing the peeling liquid and having a liquid discharge port; and a filtering device including a A filter element, the filter element has a MOF material, the filter device is connected to the liquid storage tank, the MOF material is used to adsorb the dissolved oxygen in the stripping liquid in a visible light environment; an illumination device is used to illuminate the filter Device; stripping tank, located above the liquid storage tank and the filter device, it has an inlet, an outlet, a first connecting hole and a second connecting hole, the first connecting hole is connected to the filter device, with To receive the stripping liquid from the filtering device and spray the substrate, the second connection hole is connected to the liquid storage tank for recovering the stripping liquid; the stripping tank further includes: a plurality of spray heads arranged in an array At the top of the glass tank, the filter device is connected
  • the filter device further includes a heating device for heating the filter element to release the oxygen adsorbed by the MOF material.
  • the filtering device further includes a cooling device for consuming the heat generated by the heating device and maintaining a stable temperature environment of the filtering device.
  • the heating device includes an ultraviolet lamp; and/or the lighting device includes an incandescent lamp; and/or the filter device is connected to the liquid storage tank through a pump.
  • cross section of the bottom of the peeling groove is an isosceles triangle, and the second connecting hole is provided in the center of the bottom.
  • it also includes a vacuum device for evacuating the peeling tank.
  • the stripping tank has a pipe that penetrates the bottom of the stripping groove, and the pipe is connected to the filtering device.
  • the present invention also provides a photoresist stripping method, including: providing a substrate from which the photoresist layer is to be removed and the photoresist stripping device described in any one of the preceding paragraphs; conveying the substrate to the inlet; The stripping liquid is delivered to the filtering device, the lighting device is turned on, the stripping liquid reacts with the filter element, and the dissolved oxygen in the stripping liquid is adsorbed; the filtered stripping liquid is delivered to the nozzle of the stripping tank , Spraying and peeling the photoresist layer; after the peeling is finished, use an air knife to remove the remaining photoresist stripping liquid, and remove the substrate from the outlet.
  • the step of transferring the substrate to the entrance and irradiating the photoresist layer to be removed with an ultraviolet lamp includes: turning on the pump, sucking the stripping liquid into the filter device, and turning on the lighting device ;
  • the filtered stripping liquid is transported to the stripping tank through the pipeline, and returned to the stripping tank through the bottom.
  • the method further includes: turning on the heating device, heating the filter element, and releasing the oxygen adsorbed by the MOF material.
  • the present invention provides a photoresist stripping device and a photoresist stripping method.
  • MOF material By adding MOF material to the filter element of the filter device, the material can capture oxygen in the solution under visible light, reduce the dissolved oxygen in the solution, and reduce the inside and outside of the gap.
  • the oxygen concentration is poor, which alleviates the hollowing out of copper caused by the stripping of the photoresist from the substrate; further, when it reaches saturation, it can be heated or ultraviolet light to release the adsorbed oxygen, and the filter material can be recycled .
  • Fig. 1 is a schematic diagram of the structure of the copper hollowing phenomenon in the prior art
  • FIG. 2 is a schematic diagram of the structure of the photoresist stripping device provided by the present invention.
  • Figure 3 is a schematic diagram of the macroscopic structure of the MOF material provided by the present invention.
  • Figure 4 is an enlarged partial structure diagram of Figure 3;
  • Fig. 5 is a schematic diagram of the microscopic structure of the MOF material provided by the present invention.
  • Fig. 6 is a schematic diagram of the structure of the modified ligand part of Fig. 5;
  • FIG. 7 is a schematic diagram of the structure of the reversible reaction between the MOF material and oxygen provided by the present invention.
  • Photoresist peeling device 100
  • Illumination device 16 peeling tank 11; vacuum device 18;
  • Heating device 151 Cooling device 152; Inlet 111;
  • Outlet 112 first connecting hole 113; second connecting hole 114;
  • Nozzle 116 Nozzle 116; pipe 118; air knife 117;
  • the present invention provides a photoresist peeling device 100, which includes: a conveyor belt 12, a liquid storage tank 14, a filter device 15, a lighting device 16, a peeling tank 11 and a vacuum device 18.
  • the conveyor belt 12 is used to carry and convey a substrate 13 to be stripped of the photoresist layer, and the power of the conveyor belt 12 is driven by a motor.
  • the liquid storage tank 14 stores the stripping liquid and recovers the stripping liquid, and has a liquid discharge port to be discharged from the liquid discharge port.
  • the filter device 15 includes a filter element with MOF material, and the filter device 15 is connected to the liquid storage tank 14.
  • FIG. 3 it is a macroscopic structure diagram of the MOF material of the present invention.
  • FIG. 4 it is a partial enlarged view of FIG. 3. You can see the frame of the MOF material.
  • a crystalline porous material with a periodic network structure It has the advantages of high porosity, low density, large specific surface area, regular pores, adjustable pore size, diversity of topological structure and tailorability.
  • FIG. 5 it is a microscopic structure diagram of the MOF material of the present invention, which includes an organic framework part 32 and a modified ligand part 31.
  • the molecular structure of the organic framework 32 is:.
  • the structure of the modified ligand portion 31 is shown in FIG. 6.
  • the filtering device 15 further includes a heating device 151 and a cooling device 152.
  • the MOF material is used to absorb the dissolved oxygen in the stripping liquid under a visible light environment, reduce the dissolved oxygen in the stripping, thereby reducing the difference in oxygen concentration inside and outside the gap, and alleviating the hollowing phenomenon of copper.
  • the heating device 151 is used to heat the filter element to release oxygen absorbed by the MOF material, and the heating device 151 may be an ultraviolet lamp or an electric heating device 151.
  • the lighting device 16 is used to illuminate the filter device 15 because the MOF material needs to be in a visible light environment to absorb oxygen.
  • the lighting device 16 includes an incandescent lamp.
  • the filtering device 15 further includes a cooling device 152 for consuming the heat generated by the heating device 151 and maintaining a stable temperature environment of the filtering device 15.
  • the cooling device 152 is a water cooling system.
  • the peeling tank 11 is arranged above the liquid storage tank 14, the filter device 15 and the liquid storage tank 14, and has an inlet 111, an outlet 112, a first connection hole 113, and a second connection hole 114,
  • the first connecting hole 113 is connected to the filter device 15 for receiving the stripping liquid from the filter device 15 and spraying the substrate 13, and the second connecting hole 114 is connected to the liquid storage tank 14 for recycling Said peeling liquid.
  • the conveyor belt 12 penetrates the outlet 112 and the inlet 111.
  • the cross section of the bottom of the peeling groove 11 is an isosceles triangle, and the second connecting hole 114 is provided in the center of the bottom.
  • the stripping liquid may flow toward the center along the bottom of the stripping tank 11 and then flow to the liquid storage tank 14 through the second connecting hole 114.
  • the stripping tank 11 further includes a spray head 116, a pipe 118 and an air knife 117.
  • the spray heads 116 are arranged in an array on the top of the glass tank, and are connected to the filter device 15 through the first connecting hole 113 for spraying the stripping liquid onto the photoresist layer.
  • the air knife 117 is arranged on the side of the outlet 112 for peeling off the photoresist.
  • the pipe 118 penetrates the bottom of the stripping tank 11, and the pipe 118 is connected to the filter device 15. Before the operation of the device, that is, when the substrate 13 has not been transferred to the peeling tank 11.
  • the filtered stripping liquid is transported into the stripping tank 11 through the pipe 118, and returned to the stripping tank 11 through the bottom, mainly for adjusting the temperature and light parameters.
  • the filtering device 15 is connected to the liquid storage tank 14 through a pump 17.
  • the vacuum device 18 is used for evacuating the peeling tank 11.
  • the present invention also provides a photoresist stripping method, including:
  • Step S1) Provide the substrate 13 on which the photoresist layer is to be removed and the photoresist stripping device 100 described above.
  • Step S2) Turn on the pump 17, suck the stripping liquid into the filter device 15, and turn on the lighting device 16.
  • Step S3) The filtered stripping liquid is transported into the stripping tank 11 through the pipe 118, and returned to the stripping tank 11 through the bottom.
  • Step S1) ⁇ Step S2) by transporting the filtered stripping liquid into the stripping tank 11 through the pipe 118, and returning it to the stripping tank 11 through the bottom, mainly for debugging the device, adjusting the temperature and light parameters Adjustment.
  • Step S4) The substrate 13 is transferred to the inlet 111.
  • Step S5) The stripping liquid is pumped by the pump 17 and transported to the filter device 15, the lighting device 16 is turned on, the stripping liquid reacts with the filter element, and the dissolved oxygen in the stripping liquid is adsorbed.
  • Step S6 The filtered stripping liquid is delivered to the spray head 116 of the stripping tank 11, and the photoresist layer is sprayed and stripped;
  • Step S7) After the peeling is finished, use an air knife 117 to remove the remaining photoresist peeling liquid, and remove the substrate 13 from the outlet 112.
  • Step S8) Turn on the heating device 151 to heat the filter element to release the oxygen adsorbed by the MOF material, so that the MOF material can be recycled.
  • the present invention provides a photoresist stripping device 100 and a photoresist stripping method.
  • MOF material By adding MOF material to the filter element of the filter device 15, the material can capture oxygen in the solution under visible light, reduce the dissolved oxygen in the solution, and thereby reduce The difference in oxygen concentration inside and outside the gap relieves the hollowing out of copper caused by the stripping of the substrate 13 from the photoresist; further, when it reaches saturation, it can be heated or ultraviolet light to release the adsorbed oxygen, which can then be recycled Use filter material.

Abstract

一种光阻剥离装置(100)以及光阻剥离方法，光阻剥离装置(100)包括：传送带(12)、储液槽(14)、过滤装置(15)、照明装置(16)、剥离槽(11)以及真空装置(18)，通过在过滤装置(15)的滤芯中添加MOF材料，这种材料在可见光下可以捕捉溶液中的氧气，降低溶液中的溶解氧，进而降低缝隙内外的氧浓度差，缓解因基板剥离光阻所产生铜的掏空现象；进一步的，当达到饱和时，可对MOF材料进行加热或者紫外光照，将MOF吸附的氧气释放出去，进而可循环使用滤芯材料。

Description

光阻剥离装置及光阻剥离方法 技术领域
本发明涉及显示技术领域，特别是一种光阻剥离装置及光阻剥离方法。
 背景技术
随着显示器的大型化以及画质高清化，需要电阻率更低的金属来做电子传输导线，目前金属铜可以满足电导率高，价格相对较低的要求；但由于其与玻璃基板的粘附性较差，以及铜元素易于向氧硅或者氮硅膜内进行扩散，所以会在其与玻璃基板之间加一层很薄的缓冲层，一般缓冲层的材料选用钼或者钼合金。
半导体、薄膜晶体管液晶显示器（TFT-LCD）、有机电激光显示（OLED）等微电路图案的形成过程经过以下几个过程。首先铜钼或其合金在玻璃基板或者绝缘层上形成一定厚度的膜层，然后经过光刻胶涂布曝光显影过程形成图案，接下来用铜酸蚀刻液将图案外的金属蚀刻掉，之后再用光阻剥离液将光刻胶去掉，进而形成金属膜层的图案化，构成电极电路。
 技术问题
通常在不同的溶液体系中金属具有不同的电极电位，金属铜和钼在同一溶液体系中的电极电位也有所差异。在酸性溶液中，金属钼的电极电位要低于金属铜。由于铜和钼金属的电极电位有所差异，在导电溶液中接触的此两种金属就会形成电偶腐蚀，其中钼作为阳极，铜作为阴极，钼的蚀刻会加速。如图1所示，由于金属蚀刻这一制程发生在酸性蚀刻液中，蚀刻终点时铜和钼之间会产生钼底切22和铜掏空的现象，进而会形成一间隙23。光阻剥离发生在碱性的光阻剥离液中，其中金属铜和钼的电极电势发生反转，铜做阳极，钼做阴极，铜进一步被腐蚀，形成孔洞21。此孔洞21的形成驱动力由缝隙内外的阴离子、氧气浓度、缝隙内外铜表面的电势差构成。下层的钼也在被腐蚀，间隙23越来越大，缝隙内外的阴离子、氧气浓度梯度差变小，孔洞里的缝隙腐蚀驱动力变小。同时，缝隙的最深处阴离子和氧气浓度差和外界最大，此处的腐蚀活性最强，新的点位的缝隙腐蚀形成并向深处蔓延，便会形成新的孔洞
因此，急需提供一种新的光阻剥离装置及光阻剥离方法，用以缓解铜掏空的现象。
 技术解决方案
本发明的目的是，提供一种光阻剥离装置以及光阻剥离方法，通过在过滤装置的滤芯中添加MOF材料，该材料在可见光下可以捕捉溶液中的氧气，降低溶液中的溶解氧，进而降低缝隙内外的氧浓度差，缓解因基板剥离光阻所产生铜的掏空现象；进一步的，当达到饱和时，可对其进行加热或者紫外光照，将其吸附的氧气释放出去，进而可循环使用滤芯材料。
为达到上述目的，提供一种光阻剥离装置，包括:传送带，用以承载并传送一待剥离光阻层的基板；储液槽，存储剥离液，具有一排液口；过滤装置，包括一滤芯，所述滤芯具有MOF材料，所述过滤装置连接所述储液槽，所述MOF材料在可见光的环境下用以吸附所述剥离液中的溶解氧；照明装置，用以照明所述过滤装置；剥离槽，设于所述储液槽以及所述过滤装置的上方，其具有一入口、出口、第一连接孔以及第二连接孔，所述第一连接孔连接所述过滤装置，用以接收来自过滤装置的剥离液并喷洒所述基板，所述第二连接孔连接所述储液槽，用以回收所述剥离液；所述剥离槽还包括：多个喷头，阵列式地设于所述玻璃槽的顶端，通过所述第一连接孔连接所述过滤装置，用以将所述剥离液喷洒至所述光阻层上；风刀，设于所述出口侧，用以去除所述基板上的剥离液；其中，所述传送带贯穿所述出口以及所述入口。
进一步地，所述过滤装置还包括加热装置，用以加热所述滤芯，将所述MOF材料吸附的氧气释放。
进一步地，所述过滤装置还包括冷却装置，用以消耗所述加热装置产生的热量，维持所述过滤装置稳定的温度环境。
进一步地，所述加热装置包括紫外线灯；和/或所述照明装置包括白炽灯；和/或所述过滤装置通过一泵连接所述储液槽。
进一步地，所述剥离槽的底部的截面为等腰三角形，所述第二连接孔设于所述底部的中心。
进一步地，还包括真空装置，用以使所述剥离槽抽真空。
进一步地，所述剥离槽具有一管道，所述管道贯穿所述剥离槽底部，所述管道连接所述过滤装置。
本发明还提供一种光阻剥离方法，包括：提供待去除光阻层的基板以及前文任一项所述的光阻剥离装置；将所述基板传送至所述入口；通过所述泵抽取所述剥离液输送至所述过滤装置中，打开照明装置，所述剥离液与所述滤芯反应，所述剥离液中的溶解氧被吸附；将过滤好的剥离液输送至所述剥离槽的喷头，并对所述光阻层进行喷洒并进行剥离；剥离结束后，用风刀移除残留的光阻剥离液，将所述基板从所述出口移出。
进一步地，在将所述基板传送至所述入口，采用紫外线灯照射所述待去除的光阻层步骤之前包括：打开泵，吸取所述剥离液送入所述过滤装置中，并打开照明装置；将过滤好的剥离液通过所述管道输送至所述剥离槽内，经底部回流至所述剥离槽中。
进一步地，还包括：打开所述加热装置，加热所述滤芯，将所述MOF材料吸附的氧气释放。
 有益效果
本发明提供一种光阻剥离装置以及光阻剥离方法，通过在过滤装置的滤芯中添加MOF材料，该材料在在可见光下可以捕捉溶液中的氧气，降低溶液中的溶解氧，进而降低缝隙内外的氧浓度差，缓解因基板剥离光阻所产生铜的掏空现象；进一步的，当达到饱和时，可对其进行加热或者紫外光照，将其吸附的氧气释放出去，进而可循环使用滤芯材料。
 附图说明
图1为现有技术的铜掏空现象结构示意图；
图2为本发明提供的光阻剥离装置的结构示意图；
图3为本发明提供的MOF材料宏观的结构示意图；
图4为图3放大后的部分结构图；
图5为本发明提供的MOF材料微观的结构示意图；
图6为图5的修饰配体部分的结构示意图；
图7为本发明提供的MOF材料与氧气的可逆反应的结构示意图。
光阻剥离装置100。
传送带12；储液槽14；过滤装置15；
照明装置16；剥离槽11；真空装置18；
加热装置151；冷却装置152；入口111；
出口112；第一连接孔113；第二连接孔114；
喷头116；管道118；风刀117；
泵17；基板13。
 本发明的实施方式
本申请提供一种实体键盘输入系统、键盘输入方法及存储介质，为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
如图2所示，本发明提供一种光阻剥离装置100，包括:传送带12、储液槽14、过滤装置15、照明装置16、剥离槽11以及真空装置18。
所述传送带12用以承载并传送一待剥离光阻层的基板13，所述传送带12的动力由电机驱动。
所述储液槽14存储剥离液，以及回收剥离液，具有一排液口，从所述排液口排出。
所述过滤装置15包括一滤芯，所述滤芯具有MOF材料，所述过滤装置15连接所述储液槽14。
如图3所述，为本发明的MOF材料宏观结构图，如图4所示，为图3的部分放大图，可以看到MOF材料的框架，其金属离子与有机配体通过自组装形成的具有周期性网络结构的晶体多孔材料。它具有高孔隙率、低密度、大比表面积、孔道规则、孔径可调以及拓扑结构多样性和可裁剪性等优点。
如图5所示，为本发明MOF材料微观的结构图，其包括有机框架部分32以及修饰配体部分31，所述有机框架32的分子结构式为：。所述修饰配体部分31结构如图6所示。
所述过滤装置15还包括加热装置151以及冷却装置152。
所述MOF材料在可见光的环境下用以吸附所述剥离液中的溶解氧，降低剥离中的溶解氧，进而降低间隙内外的氧浓度差，缓解铜的掏空现象。
所述加热装置151用以加热所述滤芯，用以将所述MOF材料吸附的氧气释放，所述加热装置151可以为紫外线灯或者电加热装置151。
如图7所示，给出了MOF材料吸收氧气以及释放氧气的反应结构图，其是可逆的反应，因而可以循环利用MOF材料，图7中的标记41和42为结构变化处，由于吸附氧气导致。
所述照明装置16用以照射过滤装置15，因为所述MOF材料吸附氧气需要在可见光的环境中。所述照明装置16包括白炽灯。
所述过滤装置15还包括冷却装置152，用以消耗所述加热装置151产生的热量，维持所述过滤装置15稳定的温度环境，所述冷却装置152为水冷系统。
所述剥离槽11设于所述储液槽14以及所述过滤装置15以及所述储液槽14的上方，其具有一入口111、出口112、第一连接孔113以及第二连接孔114，所述第一连接孔113连接所述过滤装置15，用以接收来自过滤装置15的剥离液并喷洒所述基板13，所述第二连接孔114连接所述储液槽14，用以回收所述剥离液。
所述传送带12贯穿所述出口112以及所述入口111。
所述剥离槽11的底部的截面为等腰三角形，所述第二连接孔114设于所述底部的中心。所述剥离液可以随着剥离槽11的底部向中心流动进而通过所述第二连接孔114流向所述储液槽14。
所述剥离槽11还包括：喷头116、管道118以及风刀117。
所述喷头116阵列式地设于所述玻璃槽的顶端，通过所述第一连接孔113连接所述过滤装置15，用以将所述剥离液喷洒至所述光阻层上。
所述风刀117设于所述出口112侧，用以剥离所述光阻。
所述管道118贯穿所述剥离槽11底部，所述管道118连接所述过滤装置15。在装置工作之前，即基板13还未传送至剥离槽11中的时候。将过滤好的剥离液通过所述管道118输送至所述剥离槽11内，经底部回流至所述剥离槽11中，主要为了调试装置，将温度以及光照的参数调整。
所述过滤装置15通过一泵17连接所述储液槽14。所述真空装置18用以使所述剥离槽11抽真空。
本发明还提供一种光阻剥离方法，包括：
步骤S1）提供待去除光阻层的基板13以及所述的光阻剥离装置100。
步骤S2）打开泵17，吸取所述剥离液送入所述过滤装置15中，并打开照明装置16。
步骤S3）将过滤好的剥离液通过所述管道118输送至所述剥离槽11内，经底部回流至所述剥离槽11中。步骤S1）~步骤S2）通过将过滤好的剥离液通过所述管道118输送至所述剥离槽11内，经底部回流至所述剥离槽11中，主要为了调试装置，将温度以及光照的参数调整。
步骤S4）将所述基板13传送至所述入口111。
步骤S5）通过所述泵17抽取所述剥离液输送至所述过滤装置15中，打开照明装置16，所述剥离液与所述滤芯反应，所述剥离液中的溶解氧被吸附。
步骤S6）将过滤好的剥离液输送至所述剥离槽11的喷头116，并对所述光阻层进行喷洒并进行剥离；
步骤S7）剥离结束后，用风刀117移除残留的光阻剥离液，将所述基板13从所述出口112移出。
步骤S8）打开所述加热装置151，加热所述滤芯，将所述MOF材料吸附的氧气释放，进而可以循环利用所述MOF材料。
本发明提供一种光阻剥离装置100以及光阻剥离方法，通过在过滤装置15的滤芯中添加MOF材料，该材料在在可见光下可以捕捉溶液中的氧气，降低溶液中的溶解氧，进而降低缝隙内外的氧浓度差，缓解因基板13剥离光阻所产生铜的掏空现象；进一步的，当达到饱和时，可对其进行加热或者紫外光照，将其吸附的氧气释放出去，进而可循环使用滤芯材料。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (10)

  1. 一种光阻剥离装置，其中，包括:
    传送带，用以承载并传送一待剥离光阻层的基板；
    储液槽，存储剥离液，具有一排液口；
    过滤装置，包括一滤芯，所述滤芯具有MOF材料，所述过滤装置连接所述储液槽，所述MOF材料在可见光的环境下用以吸附所述剥离液中的溶解氧；
    照明装置，用以照明所述过滤装置；
    剥离槽，设于所述储液槽以及所述过滤装置的上方，其具有一入口、出口、第一连接孔以及第二连接孔，所述第一连接孔连接所述过滤装置，用以接收来自过滤装置的剥离液并喷洒所述基板，所述第二连接孔连接所述储液槽，用以回收所述剥离液；所述剥离槽还包括：多个喷头，阵列式地设于所述玻璃槽的顶端，通过所述第一连接孔连接所述过滤装置，用以将所述剥离液喷洒至所述光阻层上；风刀，设于所述出口侧，用以去除所述基板上的剥离液；
    其中，所述传送带贯穿所述出口以及所述入口。
  2. 根据权利要求1所述的光阻剥离装置，其中，
    所述过滤装置还包括加热装置，用以加热所述滤芯，将所述MOF材料吸附的氧气释放。
  3. 根据权利要求2所述的光阻剥离装置，其中，
    所述过滤装置还包括冷却装置，用以消耗所述加热装置产生的热量，维持所述过滤装置稳定的温度环境。
  4. 根据权利要求2所述的光阻剥离装置，其中，
    所述加热装置包括紫外线灯；和/或
    所述照明装置包括白炽灯；和/或
    所述过滤装置通过一泵连接所述储液槽。
  5. 根据权利要求1所述的光阻剥离装置，其中，
    所述剥离槽的底部的截面为等腰三角形，所述第二连接孔设于所述底部的中心。
  6. 根据权利要求1所述的光阻剥离装置，其中，还包括
    真空装置，用以使所述剥离槽抽真空。
  7. 根据权利要求1所述的光阻剥离装置，其中，
    所述剥离槽具有一管道，所述管道贯穿所述剥离槽底部，所述管道连接所述过滤装置。
  8. 一种光阻剥离方法，其中，包括：
    提供待去除光阻层的基板以及如权利要求1所述的光阻剥离装置；
    将所述基板传送至所述入口；
    通过所述泵抽取所述剥离液输送至所述过滤装置中，打开照明装置，所述剥离液与所述滤芯反应，所述剥离液中的溶解氧被吸附；
    将过滤好的剥离液输送至所述剥离槽的喷头，并对所述光阻层进行喷洒并进行剥离；
    剥离结束后，用风刀移除残留的光阻剥离液，将所述基板从所述出口移出。
  9. 根据权利要求8所述的光阻剥离方法，其中，
    在将所述基板传送至所述入口，采用紫外线灯照射所述待去除的光阻层步骤之前包括：
    打开泵，吸取所述剥离液送入所述过滤装置中，并打开照明装置；
    将过滤好的剥离液通过所述管道输送至所述剥离槽内，经底部回流至所述剥离槽中。
  10.     根据权利要求8所述的光阻剥离方法，其中，还包括：
    打开所述加热装置，加热所述滤芯，将所述MOF材料吸附的氧气释放。
PCT/CN2020/080779 2020-02-11 2020-03-24 光阻剥离装置及光阻剥离方法 WO2021159587A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030075524A1 (en) * 2001-10-15 2003-04-24 Applied Materials, Inc. Method of photoresist removal in the presence of a dielectric layer having a low k-value
US20030125225A1 (en) * 2001-12-31 2003-07-03 Chongying Xu Supercritical fluid cleaning of semiconductor substrates
CN1886334A (zh) * 2003-11-24 2006-12-27 巴斯福股份公司 使用电化学制备的结晶多孔有机金属骨架可控地存储和释放气体的方法
CN101732947A (zh) * 2010-01-13 2010-06-16 北京科技大学 一种低浓度瓦斯安全吸附富集的方法
CN106462088A (zh) * 2014-11-18 2017-02-22 株式会社Lg化学 光刻胶去除设备及使用所述设备的光刻胶去除方法
CN110204364A (zh) * 2019-06-04 2019-09-06 常州大学 一种用于厨余垃圾堆肥的装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327888A (zh) * 2000-06-09 2001-12-26 株式会社平间理化研究所 基板表面处理装置
CN1991594A (zh) * 2005-12-27 2007-07-04 奇美实业股份有限公司 显影溶液回收处理方法以及显影溶液回收处理装置
EP2423751B1 (en) * 2009-04-24 2013-12-11 Asahi Kasei E-materials Corporation Developing apparatus, process for treating developing solution, process for producing printing plate, and filter apparatus
CN103012494B (zh) * 2012-12-14 2015-04-01 中国科学院青岛生物能源与过程研究所 一种膦酸盐类金属有机框架化合物及制法和应用
CN103995441B (zh) * 2014-06-11 2019-05-31 深圳市华星光电技术有限公司 光阻剥离方法及光阻剥离装置
CN208709432U (zh) * 2017-12-29 2019-04-09 浙江绍兴苏泊尔生活电器有限公司 烹饪器具
CN207937221U (zh) * 2017-12-31 2018-10-02 天津晟亨德科技发展有限公司 可过滤氢气杂质的气体取样器
CN108227411B (zh) * 2018-01-18 2020-10-30 武汉华星光电技术有限公司 光阻预烘烤冷却系统
CN109254506B (zh) * 2018-08-15 2021-10-15 上海华力集成电路制造有限公司 光刻胶剥离设备及其剥离方法
CN110047735A (zh) * 2019-04-02 2019-07-23 深圳市华星光电技术有限公司 金属结构湿制程处理方法、tft制备方法、tft及显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030075524A1 (en) * 2001-10-15 2003-04-24 Applied Materials, Inc. Method of photoresist removal in the presence of a dielectric layer having a low k-value
US20030125225A1 (en) * 2001-12-31 2003-07-03 Chongying Xu Supercritical fluid cleaning of semiconductor substrates
CN1886334A (zh) * 2003-11-24 2006-12-27 巴斯福股份公司 使用电化学制备的结晶多孔有机金属骨架可控地存储和释放气体的方法
CN101732947A (zh) * 2010-01-13 2010-06-16 北京科技大学 一种低浓度瓦斯安全吸附富集的方法
CN106462088A (zh) * 2014-11-18 2017-02-22 株式会社Lg化学 光刻胶去除设备及使用所述设备的光刻胶去除方法
CN110204364A (zh) * 2019-06-04 2019-09-06 常州大学 一种用于厨余垃圾堆肥的装置

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