WO2021153243A1 - 光半導体装置用パッケージ及び光半導体装置 - Google Patents

光半導体装置用パッケージ及び光半導体装置 Download PDF

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Publication number
WO2021153243A1
WO2021153243A1 PCT/JP2021/000969 JP2021000969W WO2021153243A1 WO 2021153243 A1 WO2021153243 A1 WO 2021153243A1 JP 2021000969 W JP2021000969 W JP 2021000969W WO 2021153243 A1 WO2021153243 A1 WO 2021153243A1
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WO
WIPO (PCT)
Prior art keywords
metal layer
optical semiconductor
semiconductor device
package
porous
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Application number
PCT/JP2021/000969
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English (en)
French (fr)
Japanese (ja)
Inventor
義秀 大村
友洋 二神
広樹 浅野
佳弘 小林
紘 津田
Original Assignee
パナソニックＩｐマネジメント株式会社
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Application filed by パナソニックＩｐマネジメント株式会社 filed Critical パナソニックＩｐマネジメント株式会社
Priority to JP2021574610A priority Critical patent/JP7476241B2/ja
Priority to CN202180010304.4A priority patent/CN115210889A/zh
Publication of WO2021153243A1 publication Critical patent/WO2021153243A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present disclosure relates to a package for an optical semiconductor device and an optical semiconductor device.
  • the optical semiconductor device includes a semiconductor device package having a lead frame and an optical semiconductor element mounted on the semiconductor device package.
  • the package for an optical semiconductor device is, for example, a package in which an optical semiconductor element electrically connected by a wire or the like and a lead frame are sealed with a sealing resin.
  • a method of mounting an optical semiconductor device having a package for an optical semiconductor device on a mounting substrate a method of joining the lead frame of the semiconductor device package and the mounting substrate by reflow using a solder material such as solder paste is the mainstream. ..
  • an optical semiconductor such as a light emitting element and a light receiving element
  • the package itself for mounting the optical semiconductor element is described as a package for an optical semiconductor device, and the optical semiconductor element is mounted.
  • the entire package for an optical semiconductor device (a combination of an optical semiconductor element and a package for an optical semiconductor device) is referred to as an optical semiconductor device.
  • the optical semiconductor device using the package for the optical semiconductor device includes the optical semiconductor element surrounded by the resin frame of the package for the optical semiconductor device and the seal filled in the resin frame so as to cover the optical semiconductor element. It is equipped with a stop resin.
  • the adhesion between the metal constituting the lead frame and the resin frame there is a problem in the adhesion between the metal constituting the lead frame and the resin frame. Specifically, if the adhesion between the resin frame and the metal deteriorates, a gap may occur at the interface between the resin frame and the metal. As a result, the sealing resin leaks when the sealing resin is filled in the resin frame through the gap at the interface between the resin frame and the metal, or the inside of the package for the optical semiconductor device due to the reflow heat at the time of solder joining. Problems such as the penetration of the solder material into (inside the resin frame) occur.
  • Patent Documents 1 and 2 a method of roughening the surface of the metal plating film of the lead frame (see Patent Documents 1 and 2) and a method of forming a groove in a portion in contact with the resin frame during press working of the lead frame (see Patent Documents 1 and 2). (See Patent Document 3) is known.
  • the contact area between the resin frame and the lead frame can be increased, so that the adhesion between the resin frame and the lead frame can be improved.
  • the sealing resin leaks from the resin frame, and the solder material permeates into the package for optical semiconductor devices at the time of solder bonding. The defect is suppressed.
  • the contact area between the lead frame and the resin frame will be small, and the effect of defects when a gap is created at the interface between the lead frame and the resin frame will be affected. growing. Specifically, leakage of the sealing resin becomes apparent from the gap formed at the interface between the lead frame and the resin frame.
  • the reliability test of the solder material used for solder bonding between the lead frame and the mounting board (test in which reflow is repeated)
  • the solder material permeates into the inside of the resin frame due to the reflow heat, and the reliability test is performed. It is also happening that the requirements cannot be satisfied.
  • gas may enter through a gap at the interface between the lead frame and the resin frame, and airtightness may not be ensured.
  • the present disclosure has been made in order to solve such a problem, and to provide a highly reliable package for an optical semiconductor device, an optical semiconductor device, and the like by suppressing resin leakage of a sealing resin and the like.
  • the purpose is to provide a highly reliable package for an optical semiconductor device, an optical semiconductor device, and the like by suppressing resin leakage of a sealing resin and the like.
  • the package for an optical semiconductor device is a package for an optical semiconductor device in which an optical semiconductor element is arranged and sealed with a sealing resin, and is a lead frame main body.
  • a first metal layer located on the lead frame main body and a resin frame body provided on the first metal layer are provided, and the first metal layer has a porous shape and the resin.
  • a part of the frame is embedded in the porous hole.
  • the optical semiconductor device is located on the above-mentioned optical semiconductor device package and the first metal layer, and is surrounded by the resin frame.
  • a semiconductor element and a sealing resin provided inside the resin frame and sealing the optical semiconductor element are provided.
  • FIG. 1 is a plan view of the optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 2 is a cross-sectional view of the optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 3 is a partial cross-sectional view of the optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 4 is a cross-sectional view of the optical semiconductor device according to the modified example of the present disclosure.
  • FIG. 5A is an SEM image of the surface of the first metal layer of the package for an optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 5B is an SEM image of a cross section near the boundary between the first metal layer and the resin frame in the package for an optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 5A is an SEM image of the surface of the first metal layer of the package for an optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 5B is an SEM image of a cross section near the boundary between the first metal layer and the resin frame in the package for
  • FIG. 6 is a diagram for explaining a partial plating method (striped plating) in the package for an optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 7 is a diagram for explaining a partial plating method (spot plating) in the package for an optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 8 is a diagram for explaining a criterion for evaluating resin leakage in the package for an optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 9 is a diagram showing an experimental result of resin leakage evaluation in a package for an optical semiconductor device according to an embodiment of the present disclosure.
  • FIG. 1 is a plan view of the optical semiconductor device 1 according to the embodiment of the present disclosure
  • FIG. 2 is a cross-sectional view of the optical semiconductor device 1 in lines II-II of FIG.
  • FIG. 3 is a partial cross-sectional view of the optical semiconductor device 1, and is an enlarged view of a region III surrounded by a broken line in FIG.
  • the porous-shaped holes of the first metal layer 12 are schematically shown, and in FIGS. 2 and 3, the number and shape of the porous-shaped holes of the first metal layer 12 are shown. Does not match.
  • the package 2 for an optical semiconductor device according to the present embodiment is a package suitable for mounting an optical semiconductor device, but the element mounted on the package 2 for an optical semiconductor device is not limited to the optical semiconductor device. , Ordinary semiconductor devices other than optical semiconductor devices may be used. That is, the optical semiconductor device package 2 according to the present embodiment is a package that can also be called a “semiconductor device package”. Further, the package 2 for an optical semiconductor device has a rectangular parallelepiped structure as a whole, but is not limited to this.
  • the optical semiconductor device 1 includes a package 2 for an optical semiconductor device, an optical semiconductor device 30 mounted on the package 2 for an optical semiconductor device, and an optical semiconductor device 30.
  • a sealing resin 40 filled in a concave portion of the package 2 for an optical semiconductor device is provided so as to cover the above.
  • the optical semiconductor device package 2 is a package for mounting the optical semiconductor element 30.
  • the package 2 for an optical semiconductor device is a package for sealing the optical semiconductor element 30 with a sealing resin 40, and includes a lead frame 10 and a resin frame body 20.
  • the resin frame body 20 is provided on the lead frame 10.
  • the outer portion of the lead frame 10 of the resin frame body 20 is an outer lead portion, which is a soldered portion 10a.
  • the soldering portion 10a is a portion to which a solder material is applied when the optical semiconductor device 1 is mounted on a mounting board or the like and is solder-bonded to the wiring of the mounting board.
  • the inner portion of the lead frame 10 of the resin frame body 20 is an inner lead portion, which is an optical semiconductor element mounting portion 10b on which the optical semiconductor element 30 is mounted. That is, the resin frame 20 surrounds the optical semiconductor element mounting portion 10b of the lead frame 10.
  • a lead frame 10 which is a metal base material made of copper, iron, nickel, or an alloy containing at least two of them is desired by a molding technique such as pressing or etching. It is configured by processing into the shape of the above, subjecting it to a predetermined surface treatment and resin molding of the resin frame 20.
  • the lead frame 10 has a lead frame main body 11, a first metal layer 12, and a second metal layer 13.
  • the first metal layer 12 and the second metal layer 13 are formed so as to cover the lead frame main body 11. Specifically, the first metal layer 12 is formed so as to cover the lead frame main body 11, and the second metal layer 13 is formed so as to cover the first metal layer 12.
  • the first metal layer 12 is formed so as to cover the entire surface of the lead frame main body 11. Therefore, as shown in FIG. 2, the first metal layer 12 is formed on each of the upper surface and the lower surface of the lead frame main body 11.
  • the second metal layer 13 is formed so as to cover the entire surface of the first metal layer 12. Therefore, as shown in FIG. 2, the second metal layer 13 is formed on each of the upper surface of the upper first metal layer 12 and the lower surface of the lower first metal layer 12.
  • the lead frame 10 has a structure in which the first metal layer 12 and the second metal layer 13 are laminated in this order in the direction away from the lead frame main body 11. Therefore, the first metal layer 12 is a metal layer on the lead frame main body 11 side.
  • the upper second metal layer 13 is a metal layer on the resin frame 20 side. That is, the upper second metal layer 13 is located between the first metal layer 12 and the resin frame 20.
  • the first metal layer 12 on the lead frame body 11 side has a porous shape. The details of the porous shape of the first metal layer 12 will be described later.
  • the resin frame body 20 is provided on the lead frame 10. Specifically, the resin frame body 20 is provided on the first metal layer 12 of the lead frame 10. As shown in FIG. 1, the resin frame body 20 is a rectangular ring-shaped frame body in a top view. That is, in the top view, the resin frame 20 surrounds the optical semiconductor element 30 in a rectangular shape.
  • the resin frame 20 provides a reflector that reflects the light emitted from the optical semiconductor element 30 toward the outside (upper part of FIG. 2). It is configured.
  • the resin frame 20 is a bowl-shaped wall portion. As shown in FIG. 2, in the resin frame body 20, the inner surface of the resin frame body 20 is an inclined surface, and the opening width of the resin frame body 20 becomes larger toward the upper side. As a result, the light emitted from the optical semiconductor element 30 can be reflected by the inner surface of the resin frame 20 and emitted upward.
  • the resin frame 20 is made of a white resin material in order to reflect light on the surface.
  • the resin frame 20 contains a white pigment.
  • the resin frame 20 contains a mineral filler or glass fiber as a reinforcing material and titanium oxide (TiO 2 ) as a white pigment.
  • TiO 2 titanium oxide
  • the mineral filler a silica-based inorganic material having a filler diameter of 2 ⁇ m to 20 ⁇ m can be used, but is not particularly limited.
  • the glass fiber a silica-based inorganic material having a size of 50 ⁇ m to 100 ⁇ m can be used, but the glass fiber is not particularly limited.
  • various base resins can be used as the base resin constituting the resin frame body 20.
  • the base resin constituting the resin frame 20 include PPA (polyphthalamide), LCP (liquid crystal polymer), PCT (polycyclohexyldimethylene terephthalate), UP (unsaturated polyester), PP (polyester), and the like.
  • the thermoplastic resin of the above may be used, or a thermosetting resin such as an epoxy resin, a silicone resin, a polyimide resin or an acrylic resin may be used.
  • the first metal layer 12 is formed as a part of the lead frame 10. Then, on the resin frame 20 side of the lead frame 10, the resin frame 20 and the first metal layer 12 are in contact with each other, and the portion of the lead frame 10 other than the portion where the resin frame 20 is provided is the second. The metal layer 13 is exposed.
  • the resin frame body 20 has an embedded portion 20a as a part embedded in the porous hole of the first metal layer 12.
  • an opening 13b is formed in the second metal layer 13, and the embedded portion 20a of the resin frame 20 is formed in the first metal layer 12 via the opening 13b of the second metal layer 13. It is embedded in the porous hole of.
  • the resin frame 20 is formed by resin molding directly above the first metal layer 12 via the opening 13b of the second metal layer 13 and directly above the second metal layer 13.
  • the adhesion between the resin frame body 20 and the first metal layer 12 can be improved by the anchor effect. can. That is, it is possible to suppress the formation of a gap between the resin frame body 20 and the first metal layer 12.
  • the second metal layer 13 is laminated on the first metal layer 12, and therefore, in this portion, the second metal layer is laminated.
  • a part of 13 is embedded in the porous hole of the first metal layer 12. That is, the second metal layer 13 has an embedded portion 13a as a part embedded in the porous hole of the first metal layer 12. In this way, a part of the second metal layer 13 enters the porous hole of the first metal layer 12, and the adhesion between the second metal layer 13 and the first metal layer 12 is improved by the anchor effect. be able to.
  • the optical semiconductor element 30 is arranged in the recess formed by the resin frame body 20 and the lead frame 10 in the package 2 for the optical semiconductor device.
  • the optical semiconductor element 30 is located on the first metal layer 12 of the package 2 for an optical semiconductor device and is surrounded by a resin frame 20.
  • the optical semiconductor device 30 is a light emitting device.
  • the optical semiconductor element 30 is an LED (Light Emitting Diode) chip.
  • the LED chip is an example of a semiconductor light emitting element that emits light by a predetermined DC power, and is a bare chip that emits a single color of visible light.
  • the optical semiconductor element 30 is mounted on the lead frame 10 in the resin frame body 20. Specifically, the optical semiconductor element 30 is die-bonded to a predetermined position of the optical semiconductor element mounting portion 10b of the lead frame 10 via the die bonding material 31.
  • the optical semiconductor element 30 is wire-bonded by a wire 32 such as a gold wire.
  • a wire 32 such as a gold wire.
  • the optical semiconductor element 30 is a double-sided electrode type LED chip, one wire 32 is connected to the upper surface electrode of the optical semiconductor element 30. That is, the upper surface electrode of the optical semiconductor element 30 is electrically connected to the second metal layer 13 via the wire 32.
  • the back electrode of the optical semiconductor element 30 is electrically connected to the second metal layer 13 via the conductive die bonding material 31.
  • the second metal layer 13 to which the upper surface electrode of the optical semiconductor element 30 is electrically connected and the second metal layer 13 to which the back electrode of the optical semiconductor element 30 is electrically connected are insulated by the insulating layer 50. It is separated.
  • the insulating layer 50 is embedded in the gap between the separated lead frames 10.
  • the insulating layer 50 is formed at the same time when the resin frame 20 is molded. Therefore, the insulating layer 50 is made of the same material as the resin frame 20.
  • the sealing resin 40 is provided in the resin frame 20 of the package 2 for the optical semiconductor device, and seals the optical semiconductor element 30.
  • the sealing resin 40 is a sealing member for coating and sealing the optical semiconductor element 30.
  • the sealing resin 40 is filled in the resin frame 20 so as to cover the optical semiconductor element 30 mounted inside the resin frame 20.
  • the sealing resin 40 is made of a translucent resin material such as a silicone resin.
  • the sealing resin 40 uses the blue light from the blue LED chip as excitation light in order to emit white light from the optical semiconductor device 1.
  • a yellow phosphor such as YAG (yttrium, aluminum, garnet) that emits fluorescent light may be contained.
  • the sealing resin 40 does not contain a phosphor, and the sealing resin 40 may remain transparent.
  • the optical semiconductor device 1 configured in this way can be mounted on the mounting board by soldering the soldered portion 10a of the lead frame 10 and the wiring of the mounting board using a solder material such as cream solder. ..
  • the lead frame body 11 is a rigid body having conductivity.
  • the lead frame body 11 is made of, for example, a metal material made of copper, iron, nickel, aluminum or an alloy containing at least two of them.
  • the lead frame main body 11 is made of copper.
  • the thickness of the lead frame main body 11 is, for example, 0.1 mm to 0.3 mm, but is not limited to this.
  • the first metal layer 12 has a porous shape (porous shape). That is, the first metal layer 12 is not a smooth metal layer having a smooth surface, but a porous metal layer having innumerable pores.
  • the first metal layer 12 having a porous shape is a nickel metal layer composed of nickel.
  • the first metal layer 12 is formed by forming nickel metal in a porous shape. That is, the first metal layer 12 and the first metal layer 12 are nickel metal layers in which the entire layer is porous.
  • the first metal layer 12 having a porous shape is preferably a metal plating film formed by a plating method. Therefore, the nickel metal layer (first metal layer 12) having a porous shape is preferably a nickel plating film formed by nickel plating. Specifically, the first metal layer 12 is a nickel-plated film in which the entire layer is porous. The nickel plating film preferably has a nickel purity of 99% or more.
  • the nickel plating film having a porous shape can be formed by an electronickel plating method.
  • a specific example of a method for forming a nickel plating film having a porous shape by an electro-nickel plating method will be described later.
  • the electroless nickel plating method is a method of plating by a chemical reaction by redox, phosphorus, boron and the like are contained as reducing agent components in the plating bath. Therefore, when a nickel plating film is formed by an electroless nickel plating method, precipitation is started by the action of those reducing agent components, and at the time of precipitation, phosphorus and boron are contained in the nickel film in an amount of 1% or more. That is, the chemical reaction does not start unless phosphorus or boron is precipitated. Therefore, in the electroless nickel plating method, phosphorus, boron and the like are preferentially deposited in the nickel metal, and it is difficult to form a nickel plating film having a porous shape.
  • the lead frame 10A further includes a smooth metal layer 14 located between the lead frame main body 11 and the first metal layer 12.
  • the smooth metal layer 14 may be formed below the upper first metal layer 12 on the lead frame main body 11 side.
  • the smooth metal layer 14 is formed on the upper surface of the lead frame main body 11, and the first metal layer 12 is formed on the upper surface of the smooth metal layer 14.
  • a smooth metal layer 14 may also be formed between the lower first metal layer 12 and the lead frame main body 11.
  • the smooth metal layer 14 is a metal layer having a smooth surface that does not have a porous shape.
  • a nickel metal layer made of nickel can be used as the smooth metal layer 14.
  • the smooth metal layer 14 is a smooth nickel film on which a porous shape is not formed.
  • the smooth nickel film can be formed by, for example, an electro-nickel plating method or an electroless nickel plating method, but the method for forming the smooth metal layer 14 is not limited to these methods. Further, the smooth metal layer 14 is not limited to the plating film.
  • the smooth metal layer 14 between the lead frame main body 11 and the first metal layer 12 By interposing the smooth metal layer 14 between the lead frame main body 11 and the first metal layer 12 in this way, it is possible to prevent the metal component of the lead frame main body 11 from being thermally diffused to the first metal layer 12 side. Can be done.
  • the lead frame main body 11 is made of copper or a copper alloy, it is possible to prevent the copper component of the lead frame main body 11 from being thermally diffused to the first metal layer 12 side.
  • the film thickness of the smooth metal layer 14 is, for example, preferably 0.1 ⁇ m or more and 10 ⁇ m or less.
  • the film thickness of the smooth metal layer 14 is preferably 0.2 ⁇ m or more from the viewpoint of preventing the diffusion of the copper component.
  • the film thickness of the smooth metal layer 14 exceeds 10 ⁇ m, the smooth metal layer 14 may be peeled off due to the stress when bending the lead frame 10. Therefore, from the viewpoint of suppressing the peeling of the smooth metal layer 14, the film thickness of the smooth metal layer 14 is preferably 10 ⁇ m or less, more preferably 1.0 ⁇ m or less.
  • the porous shape of the first metal layer 12 is a shape in which a plurality of holes are formed in the metal film constituting the first metal layer 12. As shown in FIG. 5A, the plurality of porous holes of the first metal layer 12 are randomly distributed in two dimensions when viewed from above.
  • FIG. 5A is an SEM image of the surface of the first metal layer 12 of the package 2 for an optical semiconductor device according to the embodiment of the present disclosure.
  • FIG. 5B is an SEM image of a cross section of the package 2 for the optical semiconductor device near the boundary between the first metal layer 12 and the resin frame 20.
  • each porous hole of the first metal layer 12 is a through hole penetrating the metal film. Therefore, the bottom surface of each porous hole of the first metal layer 12 becomes the surface of the base layer of the first metal layer 12.
  • the bottom surface of each porous hole of the first metal layer 12 is the surface of the lead frame main body 11.
  • the bottom surface of each porous hole of the first metal layer 12 is the surface of the smooth metal layer 14.
  • each porous hole in the first metal layer 12 may be a hole having a bottom in the middle of the metal film without penetrating the metal film. In this case, the depth of the first metal layer 12 is smaller than the film thickness of the first metal layer 12.
  • Each porous hole of the first metal layer 12 is wider at the bottom than at the top. That is, the porous hole has a shape in which the entrance is narrow and the space becomes wider toward the back. Specifically, when the first metal layer 12 is viewed in a plan view, the area of the porous pores increases downward from the planar surface of the first metal layer 12.
  • the lower portion is a portion on the lead frame main body 11 side
  • the upper portion is a portion on the opposite side to the lead frame main body 11 side.
  • the width of the upper part of the hole is a and the width of the bottom of the hole is b. , 1.3 ⁇ b / a ⁇ 4.0. If the ratio of b / a exceeds 4.0, the strength of the side wall of the porous shape decreases from the viewpoint of the strength of the first metal layer 12, and the porous shape may not be maintained. On the other hand, when the ratio of b / a is less than 1.3, the anchor effect due to a part of the resin frame 20 entering the porous hole cannot be sufficiently obtained, and the first metal layer 12 and the resin frame cannot be sufficiently obtained.
  • the adhesion to the body 20 may decrease. Further, in each of the porous holes of the first metal layer 12, when the first metal layer 12 is viewed in a plan view, the area of the bottom of the hole is 1.3 or more and 4.0 or less with respect to the area of the upper part of the hole. good.
  • the porous diameter (a in FIG. 3), which is the width of the upper part of the porous hole, is 0.05 ⁇ m or more. It is desirable that it is 2.0 ⁇ m or less.
  • the mineral filler contained in the resin frame 20 a filler having a filler diameter of 2 ⁇ m or more and 20 ⁇ m or less is usually used. Therefore, when the porous diameter exceeds 2.0 ⁇ m, the mineral filler easily enters the porous pores. Therefore, the adhesion between the first metal layer 12 and the resin frame 20 is hindered.
  • the porous diameter is less than 0.05 ⁇ m
  • the base resin does not easily enter the porous holes due to the fluidity of the base resin of the resin frame 20 during molding, and a sufficient anchoring effect cannot be obtained.
  • the adhesion between the first metal layer 12 and the resin frame 20 may decrease.
  • the porous depth d which is the depth of each porous hole of the first metal layer 12 (the film thickness of the first metal layer 12 in the present embodiment), is 0.2 ⁇ m or more and 2 ⁇ m or less. Is desirable.
  • the porous depth d is less than 0.2 ⁇ m, the base resin does not enter the porous holes of the resin frame 20 less, and a sufficient anchoring effect cannot be obtained, so that the first metal layer 12 and the resin frame 20 do not enter. Adhesion with and may decrease.
  • the porous depth d exceeds 2 ⁇ m
  • the stress becomes large in the nickel plating film, making it difficult to form the porous shape, or nickel precipitation.
  • the porous diameter cannot be maintained on the way, and the above ratio (b / a) may fall below 1.3. As a result, it may not be possible to form a porous shape for ensuring the anchor effect.
  • the number of porous holes (porous holes) of the first metal layer 12 is preferably 5 or more in a rectangular region of 10 ⁇ m ⁇ 10 ⁇ m arbitrarily designated when the first metal layer 12 is viewed in a plan view. If the number of porous holes in the rectangular region of 10 ⁇ m ⁇ 10 ⁇ m is less than 5, a sufficient anchoring effect may not be obtained, and the adhesion between the first metal layer 12 and the resin frame 20 may decrease.
  • the upper limit of the number of porous holes is not particularly limited as long as the above ratio (b / a) is 4.0 or less, but the number of porous holes is, for example, the first metal layer.
  • 50 or less are arbitrarily specified in a rectangular region of 10 ⁇ m ⁇ 10 ⁇ m.
  • the distance c between two adjacent holes is preferably 1.2 ⁇ m or more and 3.0 ⁇ m. If the distance c between two adjacent holes (distance between the centers of the two holes) exceeds 3.0 ⁇ m, the number of porous holes decreases, and there is a risk that the number will fall below 5 in the rectangular region of 10 ⁇ m ⁇ 10 ⁇ m. The anchor effect may not be sufficiently obtained, and the adhesion between the first metal layer 12 and the resin frame 20 may not be obtained.
  • the distance c between the two adjacent holes is less than 1.2 ⁇ m, the two adjacent holes are connected and the porous diameter cannot be maintained, and the above ratio (b / a) is 1.3. It may be less than that, a sufficient anchoring effect may not be obtained, and the adhesion between the first metal layer 12 and the resin frame 20 may be lowered.
  • the surface area (porous surface area) of the first metal layer 12 having a porous shape is a smooth first metal layer 12 (that is, a smooth plated metal) when it does not have a porous shape. It is desirable that it is 1.1 times or more. If the porous surface area is less than 1.1 times, the anchor effect may not be sufficiently obtained, and the adhesion between the first metal layer 12 and the resin frame 20 may decrease.
  • the upper limit of the porous surface area is not particularly limited as long as the above ratio (b / a) is 4.0 or less.
  • the second metal layer 13 may be a single layer composed of a single metal film, or may be a metal layer group composed of a plurality of metal films.
  • each of the metal films constituting the second metal layer 13 may be composed of nickel, palladium, gold, silver, or an alloy containing them. In this case, it is preferable that each of the metal films constituting the second metal layer 13 is composed of a plating film.
  • an example of the type and film thickness of the metal in the case of a single layer or a plurality of layers constituting the second metal layer 13 is shown in Table 1 below together with the type and film thickness of the metal constituting the first metal layer 12. ..
  • the second metal layer 13 is composed of a plurality of layers, the first layer, the second layer, and the third layer are used in the order of separation from the lead frame main body 11.
  • the second metal layer 13 configured in this way can be formed by a partial plating method.
  • the opening 13b can be formed in the second metal layer 13.
  • the partial plating method will be described below.
  • the partial plating method is a method of forming a precipitation area where plating is deposited and a non-precipitation area where plating is not deposited by partially masking the lead frame main body 11.
  • a photoresist material is generally used, but the masking method is not particularly limited.
  • a nickel plating film having a porous shape as the first metal layer 12 is formed on the entire lead frame main body 11 by the electrolytic nickel plating method. do.
  • the portion directly below the resin frame body 20 in the lead frame main body 11 on which the first metal layer 12 is formed is masked, and the second metal layer 13 is partially formed on the surface of the first metal layer 12 by a partial plating method. ..
  • the second metal layer 13 is not formed but becomes the opening 13b, and the nickel plating film having a porous shape becomes the first metal layer 12. Is exposed.
  • the second metal layer 13 is formed on the surface of the first metal layer 12, and the metal plating film is exposed as the second metal layer 13.
  • a striped stripe plating is formed on the surface of the first metal layer 12 as a second metal layer 13 by masking in a striped shape, or a quadrangular shape is formed.
  • FIG. 7 there is a method of forming a square-shaped spot plating as the second metal layer 13 on the surface of the first metal layer 12 by masking.
  • the spot plating it may be formed in a ring shape instead of a square shape.
  • the soldered portion 10a and the optical semiconductor device mounting portion 10b of the lead frame 10 are soldered as the package 2 for the optical semiconductor device.
  • the effect of improving performance such as soldering performance, wire bonding performance, die bonding performance and reflectance performance is also imparted.
  • the surface of the lead frame 10 that comes into contact with the resin frame 20 is the surface of the first metal layer 12.
  • the uneven surface forming the porous pores of the nickel-plated film having a porous shape formed as the first metal layer 12 may be in contact with a part of the resin frame body 20.
  • the nickel plating film which is the first metal layer 12 having a porous shape, is present on the entire contact surface of the resin frame 20 with the lead frame 10, but masking of the partial plating method of the second metal layer 13 Considering the accuracy, in order to improve the adhesion between the first metal layer 12 and the resin frame body 20, the contact area of the resin frame body 20 with the first metal layer 12 is set to the lead frame 10 in the resin frame body 20. It is desirable that it is 50% or more of the contact area. When the contact area of the resin frame 20 with the first metal layer 12 is less than 50%, a part of the resin frame 20 is embedded in the porous holes of the first metal layer 12 to sufficiently obtain an anchor effect. There is a risk that the adhesion will be reduced.
  • a groove may or may not be formed by press working. That is, the formation of the groove portion of the lead frame 10 is not particularly limited.
  • the lead frame main body 11 for example, a base material made of copper or a copper alloy is prepared. After that, the first metal layer 12 having a porous shape is formed on the entire surface of the lead frame main body 11. Specifically, as the first metal layer 12, a nickel metal film in which the entire layer is porous is formed.
  • a smooth metal layer 14 may be formed under the first metal layer 12 in order to prevent the copper or the copper alloy, which is a component of the lead frame main body 11, from being thermally diffused. .. That is, the smooth metal layer 14 may be formed on the lead frame main body 11 before the first metal layer 12 is formed, and the first metal layer 12 having a porous shape may be formed on the entire surface of the smooth metal layer 14.
  • the first metal layer 12 having a porous shape is a nickel-plated film, which is formed by an electro-nickel plating method.
  • an additive is blended in the electronickel solution used in the electronickel plating method.
  • This additive is an organic additive and may be blended in an electric nickel solution at a ratio of 0.1% to 2%.
  • the nickel-plated portion where the additive is not adsorbed becomes a portion where the nickel plating precipitation reaction is not inhibited, and a normal precipitation reaction occurs.
  • the nickel plating precipitation reaction is repeatedly performed at the portion where the precipitation reaction is inhibited and the portion where the precipitation reaction is not inhibited, so that a porous nickel plating film is formed.
  • the additive adsorbed in the nickel plating film is vaporized to form hollow pores, resulting in a porous nickel plating film.
  • the second metal layer 13 is formed so as to partially cover the first metal layer 12. Specifically, the second metal layer 13 is formed so that the first metal layer 12 is exposed at least in the portion where the resin frame 20 is formed. That is, the second metal layer 13 is formed so that the second metal layer 13 does not exist in the portion where the resin frame 20 is formed (shaped so that the opening 13b exists).
  • the second metal layer 13 may be formed by either stripe plating as shown in FIG. 6 or spot plating as shown in FIG. 7.
  • the materials of the first metal layer 12 and the second metal layer 13 may have any specifications of No. 1 to No. 6 shown in Table 1.
  • the lead frame 10 By partially forming the second metal layer 13 on the first metal layer 12 formed on the lead frame main body 11, the lead frame 10 having the lead frame main body 11, the first metal layer 12, and the second metal layer 13 can be formed. Complete. After that, if necessary, the lead frame 10 may be pressed to form a groove or the like.
  • the resin frame 20 After forming the second metal layer 13, the resin frame 20 is formed.
  • the resin frame body 20 can be formed by resin molding so as to surround the optical semiconductor element mounting portion 10b of the lead frame 10. At this time, the resin frame 20 is formed so that the second metal layer 13 is not formed and the first metal layer 12 is in contact with the exposed portion. As a result, a part of the resin frame body 20 enters the porous hole of the first metal layer 12, so that the adhesion between the resin frame body 20 and the first metal layer 12 can be improved by the anchor effect.
  • the function of insulating the optical semiconductor element mounting portion 10b of the lead frame 10 and the wire bonding portion of the optical semiconductor element 30 is exhibited, and the optical semiconductor element 30 which is a light emitting element can be used. It also functions as a reflector that reflects the emitted light.
  • the package 2 for an optical semiconductor device in which the resin frame body 20 is formed on the lead frame 10 is completed.
  • the optical semiconductor element 30 is die-bonded to the optical semiconductor element mounting portion 10b of the optical semiconductor device package 2 via a die bonding material 31, and the optical semiconductor element 30 and the second metal layer 13 are wire-bonded with a wire 32. After that, the internal space of the package 2 for the optical semiconductor device (that is, the internal space of the resin frame 20) is filled with the sealing resin 40, and the sealing resin 40 is cured to complete the optical semiconductor device 1.
  • a part of the resin frame 20 is formed in the porous holes of the first metal layer 12 in the lead frame 10. Since it is embedded, it is possible to suppress the formation of a gap at the interface between the resin frame body 20 and the first metal layer 12, and a part of the resin frame body 20 is a porous hole of the first metal layer 12.
  • the adhesion between the resin frame body 20 and the lead frame 10 can be improved by the anchor effect of being embedded in the resin frame body 20.
  • the sealing resin 40 can be effectively suppressed from leaking out, and the solder can be effectively suppressed from penetrating into the package 2 for an optical semiconductor device.
  • a nickel plating film having a thickness of 0.2 ⁇ m is formed as a smooth metal layer 14 on the entire surface of the lead frame main body 11 made of a copper alloy by a plating method, and the first metal layer 12 is formed on the entire surface of the nickel plating film.
  • a porous nickel plating film was formed by an electroplating method. At this time, an additive having a concentration of 0.5% was added to the nickel plating solution for forming the first metal layer 12.
  • a metal layer group was formed as the second metal layer 13 on the surface of the first metal layer 12.
  • the first layer is a nickel metal layer (thickness 0.5 ⁇ m)
  • the second layer is a palladium metal layer (thickness 0.04 ⁇ m)
  • the third layer is gold-plated.
  • a metal layer group of a metal layer was formed by an electroplating method.
  • the second metal layer 13 composed of the metal layer group was formed by a stripe plating method.
  • the resin frame 20 was molded using the thermoplastic resin to prepare the package 2 for the optical semiconductor device.
  • the porous depths (film thicknesses) of the porous nickel plating film formed as the first metal layer 12 are 0.1 ⁇ m, 0.2 ⁇ m, 0.5 ⁇ m, and 1 ⁇ m, respectively.
  • Samples (Examples 1 to 7) under a total of 7 levels of 2 ⁇ m, 3 ⁇ m, and 4 ⁇ m were prepared.
  • a lead frame body having grooves formed by press processing is prepared, and a smooth nickel plating film having a film thickness of 0.8 ⁇ m is formed on the entire surface of the lead frame body by an electroplating method, and the surface of the nickel plating film is formed.
  • a metal layer group in which the first layer was a palladium metal layer (thickness 0.04 ⁇ m) and the second layer was a gold-plated metal layer (thickness 0.01 ⁇ m) was formed by an electroplating method.
  • a resin frame was molded using a thermoplastic resin to prepare a package for an optical semiconductor device.
  • 24 experiments (n 24) were carried out for each of the eight samples.
  • the determination regarding the leakage of the sealing resin was made based on whether or not the solder fillet was appropriately formed in the soldered portion 10a of the lead frame 10 and the solder joint of the lead frame could be practically performed.
  • the case where the sealing resin does not leak is set as the level of [0], and the semicircular portion formed in the soldered portion 10a of the lead frame 10 is used as a reference to make a semicircle from the resin frame.
  • the level of [1] is when the amount of leakage of the sealing resin to the shape part is small
  • the level of [2] is the case of the amount of leakage of the sealing resin is slightly large
  • the leakage of the sealing resin is higher than that of the semicircular part.
  • the case where the amount of output was large was set as the level of [3].
  • the levels of [0], [1], and [2] are judged as non-defective because the solder fillet is appropriately formed in the soldered portion 10a of the lead frame 10, and the level of [3] is determined from the resin frame. Since the solder fillet was not properly formed in the soldered portion 10a of the lead frame 10 due to the leaked sealing resin, it was judged as defective.
  • FIG. 9 is a graph showing the total number of leak levels of the sealing resin for each of the samples of Examples 1 to 7 and the samples of the conventional example. That is, FIG. 9 shows the relationship between the porous depth (film thickness) of the porous nickel plating film and the number of leakage amounts of the sealing resin.
  • the non-defective product judgment will be explained.
  • the porous depth of the porous nickel plating film is in the range of 0.2 ⁇ m to 3 ⁇ m, the amount of leakage of the sealing resin is judged as a good product (levels [0], [1], [2]]. ), And it was confirmed that it has the effect of suppressing leakage of the sealing resin.
  • the level was only the non-defective product level [0].
  • the samples containing at least one of the level [3] that was judged as a defective product were the sample of the conventional example and the sample having a porous depth of 0.1 ⁇ m and 4 ⁇ m.
  • the groove was formed during the press working, but it was confirmed that it is not effective as a countermeasure against the leakage of the sealing resin by itself.
  • a level [3] for determining a defective product occurs, which is the width a of the upper part of the porous hole in FIG.
  • the package for the optical semiconductor device of each sample is filled with a sealing resin, cured, soldered to the soldered portion 10a of the lead frame 10 and the mounting substrate with cream solder, and reflow is repeated.
  • the state of solder penetration into the package for optical semiconductor devices was confirmed. The evaluation of the solder penetration was determined based on whether or not the solder had penetrated into the package for the optical semiconductor device every number of times the reflow was repeated. It was visually confirmed whether or not the solder had penetrated into the package for the optical semiconductor device.
  • the number of repetitions of reflow is 4 or more and the penetration of solder into the package for the optical semiconductor device is confirmed, it is regarded as a good product, and the number of repetitions of reflow is up to 3 times for the optical semiconductor device. If solder penetration was confirmed in the package, it was judged to be defective.
  • Table 2 shows the experimental results of the above solder penetration evaluation. Table 2 summarizes the porous depth of the porous nickel plating film and the number of repeated reflows in which solder penetration was confirmed.
  • optical semiconductor device 1 and the package for the optical semiconductor device according to the present disclosure have been described above based on the embodiments and examples, but the present disclosure is not limited to the above embodiments and examples.
  • the first metal layer 12 is composed of nickel, but the present invention is not limited to this.
  • the first metal layer 12 may be made of a metal material other than nickel as long as it has a porous shape.
  • the first metal layer 12 is a plating film formed by a plating method, but the present invention is not limited to this.
  • the first metal layer 12 may be formed by a method other than the plating method as long as it has a porous shape.
  • the LED chip is mounted as the optical semiconductor element 30 in the package 2 for the optical semiconductor device, but the present invention is not limited to this.
  • the optical semiconductor element 30 mounted on the package 2 for an optical semiconductor device may be, for example, a light receiving element or both a light emitting element and a light receiving element. That is, the light emitting element and the light receiving element may coexist in the package 2 for the optical semiconductor device.
  • the optical semiconductor element 30 is a double-sided electrode type LED chip, but the present invention is not limited to this.
  • the optical semiconductor element 30 may be a single-sided electrode type LED chip.
  • the technology of the present disclosure is useful as a package for arranging a semiconductor element and a semiconductor device including the package for arranging the semiconductor element, including a package for an optical semiconductor device for arranging an optical semiconductor element and an optical semiconductor device.

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PCT/JP2021/000969 2020-01-31 2021-01-14 光半導体装置用パッケージ及び光半導体装置 WO2021153243A1 (ja)

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JP2011222680A (ja) * 2010-04-08 2011-11-04 Panasonic Corp 光半導体装置用リードフレームおよび光半導体装置用リードフレームの製造方法
JP2013182978A (ja) * 2012-03-01 2013-09-12 Renesas Electronics Corp 半導体装置及びその製造方法
JP2016062906A (ja) * 2014-09-12 2016-04-25 株式会社東芝 発光装置およびその製造方法
JP2017118059A (ja) * 2015-12-25 2017-06-29 株式会社三井ハイテック Ｌｅｄ用リードフレーム及びその製造方法
JP2018080360A (ja) * 2016-11-15 2018-05-24 株式会社デンソー 金属部材および金属部材と樹脂部材との複合体並びにそれらの製造方法
JP2019536286A (ja) * 2016-11-17 2019-12-12 日本テキサス・インスツルメンツ合同会社 ランダムに構成されるボイドを有するナノ粒子層により高められた接着

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JP2010199166A (ja) 2009-02-24 2010-09-09 Panasonic Corp 光半導体装置用リードフレームおよび光半導体装置用リードフレームの製造方法

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JP2007258587A (ja) * 2006-03-24 2007-10-04 Rohm Co Ltd リードフレームおよびその製造方法並びにリードフレームを備えた半導体装置
JP2011222680A (ja) * 2010-04-08 2011-11-04 Panasonic Corp 光半導体装置用リードフレームおよび光半導体装置用リードフレームの製造方法
JP2013182978A (ja) * 2012-03-01 2013-09-12 Renesas Electronics Corp 半導体装置及びその製造方法
JP2016062906A (ja) * 2014-09-12 2016-04-25 株式会社東芝 発光装置およびその製造方法
JP2017118059A (ja) * 2015-12-25 2017-06-29 株式会社三井ハイテック Ｌｅｄ用リードフレーム及びその製造方法
JP2018080360A (ja) * 2016-11-15 2018-05-24 株式会社デンソー 金属部材および金属部材と樹脂部材との複合体並びにそれらの製造方法
JP2019536286A (ja) * 2016-11-17 2019-12-12 日本テキサス・インスツルメンツ合同会社 ランダムに構成されるボイドを有するナノ粒子層により高められた接着

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