WO2021142981A1 - 一种增大出光角度的led封装器件及显示应用、封装工艺 - Google Patents

一种增大出光角度的led封装器件及显示应用、封装工艺 Download PDF

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WO2021142981A1
WO2021142981A1 PCT/CN2020/088612 CN2020088612W WO2021142981A1 WO 2021142981 A1 WO2021142981 A1 WO 2021142981A1 CN 2020088612 W CN2020088612 W CN 2020088612W WO 2021142981 A1 WO2021142981 A1 WO 2021142981A1
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glue
increased light
layer
led
light output
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PCT/CN2020/088612
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English (en)
French (fr)
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黄勇鑫
牛艳玲
何静静
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盐城东山精密制造有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to the related technical field of display technology, and more precisely, to an LED packaging device with increased light output angle, display application, and packaging process.
  • Light Emitting Diode namely Light Emitting Diode
  • LED Light Emitting Diode
  • LED has the advantages of small size, long service life, energy saving and environmental protection, fast response speed, sturdiness and durability, and is an ideal light source to replace traditional light sources.
  • Light-emitting diodes are now widely used in automotive and indoor lighting, traffic lights, screen displays, and LCD backlighting.
  • the packaging process is a very important process in the LED manufacturing process, which has a very significant impact on the working performance and cost of the LED.
  • the requirements for lightness, clarity, and display size continue to increase, the requirements for the backlight module of the display device are also increasing, and accordingly, the price of the display device is also rising.
  • the light-emitting angle of the existing LED package devices is in the range of 120° to 130°.
  • a 32-inch TV needs to use 26,000 LED lamp beads, which is expensive to manufacture. Reducing the number of LED lamp beads will affect the light mixing effect, resulting in poor visual effects.
  • the distance between the LED lamp beads and the diffuser plate cannot be further reduced, which limits the lightness and thinness of the display device.
  • the art needs to improve the packaging process of the LED to manufacture an LED packaging device with a large light-emitting angle, so as to improve the display effect of the display device, reduce the production cost, and reduce the thickness.
  • the main purpose of the present invention is to provide an LED package device with increased light-emitting angle.
  • the packaging process includes substrate bonding and wire bonding processes, followed by printing or vacuum sputtering or spraying or second lamination. After that, a long baking and cutting process is performed to form the LED package device, and the light-emitting angle reaches 180°.
  • Another object of the present invention is to provide a display application of an LED packaged device with an increased light-emitting angle, which adopts the LED packaged device with an increased light-emitting angle.
  • the present invention provides an LED packaging device with an increased light-emitting angle.
  • the packaging process includes the following steps:
  • the degassing parameters of the degassing machine in the step (B) are 500 revolutions for 30 s/vacuum 30 kPa, 800 revolutions for 1 minute and 50 s/vacuum 1.5 kPa, 600 revolutions for 50 s/vacuum 1.8 kPa.
  • step (D) when the step (D) is in a printed form, it includes the steps:
  • (D1) Use silica gel, silicone resin, epoxy resin to add 1% ⁇ 90% TiO 2 , SiO 2 , Ag, chromium powder and other highly reflective and high light-shielding materials, and mix them evenly;
  • the thickness of the printing layer is 1 ⁇ m ⁇ 200 ⁇ m, and a single time of 10 ⁇ 15 ⁇ m is used for multiple printing or one printing.
  • step (D) adopts the form of vacuum sputtering
  • the following steps are included:
  • the thickness of the sputtering layer is 2 ⁇ m, and the vacuum sputtering time is 40 seconds.
  • step (D) adopts the spraying form
  • spraying is performed on the glue layer to form a spraying layer
  • the steps include:
  • the second glue is used for pressing on the glue layer to form the second glue layer.
  • one of 1%-60% of TiO 2 , SiO 2 , Ag powder, chromium, and aluminum powder is added in the step (D1).
  • the present invention also provides a display application of an LED package device with an increased light-emitting angle, which is characterized in that the LED package device with an increased light-emitting angle is adopted.
  • the advantages of the LED packaging device and display application with an increased light-emitting angle disclosed in the present invention are: through the LED packaging process for increasing the light-emitting angle, the manufactured LED packaging device has a large light-emitting angle and adopts The display application of the LED package device with increased light-emitting angle has good display effect, low production cost, and can be designed to have a thinner thickness.
  • Fig. 1 is a flow chart of the packaging process of an LED packaged device with increased light-emitting angle according to the present invention.
  • Fig. 2 is a schematic cross-sectional view of a form of an LED package device with increased light emitting angle according to the present invention.
  • the present invention provides a packaging process for an LED packaging device with increased light-emitting angle, which includes the following steps:
  • the LED device here refers to the LED package device.
  • the degassing parameters of the degassing machine in the step (B) are 500 revolutions for 30 s/vacuum 30 kPa, 800 revolutions for 1 minute and 50 s/vacuum 1.5 kPa, 600 revolutions for 50 s/vacuum 1.8 kPa to ensure uniform mixing.
  • the step (C) is placed for 5 ⁇ 10 minutes after laminating the film to ensure that the surface of the glue layer is basically hardened.
  • the thickness of the glue layer formed in the step (C) is 0.3mm ⁇ 0.6mm.
  • the film pressing time is 125° C./270 seconds for curing and molding, and there is no long baking after film pressing.
  • step (D) adopts a printed form, it includes the steps:
  • (D1) Use silica gel, silicone resin, epoxy resin to add 1% ⁇ 90% TiO 2 , SiO 2 , Ag, chromium powder and other highly reflective and high light-shielding materials, and mix them evenly;
  • the thickness of the printed layer is 1 ⁇ m ⁇ 200 ⁇ m, and a single time of 10 ⁇ 15 ⁇ m is used for multiple printing or one printing.
  • step (D) adopts the vacuum sputtering form, it includes the steps:
  • the thickness of the sputtering layer is 2 ⁇ m, and the vacuum sputtering time is 40 seconds.
  • step (D) is in the form of spraying:
  • the number of spraying is 3 ⁇ 5 times, and the thickness of the spraying layer is about 10 ⁇ m
  • step (D) adopts the second lamination form, it includes the steps:
  • the second glue is used for pressing on the glue layer to form the second glue layer.
  • step (D1) one of 1%-60% TiO 2 , SiO 2 , Ag powder, chromium, and aluminum powder is added;
  • the mixing and stirring time in the step (D1) is 3 min.
  • the degassing parameters of the degassing machine in the step (D1) are 500 revolutions for 30 s/vacuum 30 kPa, 800 revolutions for 1 minute and 50 s/vacuum 1.5 kPa, 600 revolutions for 50 s/vacuum 1.8 kPa to ensure uniform mixing.
  • the thickness of the second adhesive layer formed in the step (D2) is 0.3 mm.
  • the film pressing time is 125° C./270 seconds for curing and forming.
  • Adding TiO 2 , SiO 2 , Ag powder, chromium, and aluminum powder is to consider that it has better opacity, better whiteness and brightness, and has strong opacity, shielding the front light of the LED, and side divergence, thereby increasing the light-emitting angle , Reaching 180° out of light.
  • the long roasting parameters in the step (E) are: 1 hour at 100°C and 3 hours at 150°C.
  • the LED package device with increased light emitting angle includes a substrate 10, an adhesive layer 21 and a second layer 22, and the substrate 10 is die-bonded and bonded.
  • the thickness of the second layer 22 varies according to the method adopted in the step (D).
  • the thickness of the adhesive layer 21 ranges from 0.3 mm to 0.8 mm, and the thickness of the second layer 22 ranges from 2 ⁇ m to 0.3 mm.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种增大出光角度的LED封装器件及显示应用、封装工艺，所述增大出光角度的LED封装器件的封装工艺包括步骤：(A)在基板上固晶和焊线；(B)使用纯硅胶、硅树脂、环氧树脂按比例混合均匀，使用脱泡机脱泡后形成第一胶；(C)在基板上采用第一胶进行压膜，形成胶层；(D)在胶层表面上进行印刷或真空溅镀或喷涂或第二次压膜；(E)长烤、切割形成LED器件。所述增大发光角度的LED封器件发光角度大，采用所述LED封装器件的显示应用显示效果好，生产成本低，且可以设计厚度更薄。

Description

一种增大出光角度的LED封装器件及显示应用、封装工艺
本申请要求于2020年01月17日提交中国专利局、申请号为2020100540698、发明名称为“一种增大出光角度的LED封装器件及显示应用”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示技术相关技术领域，更准确的说涉及一种增大出光角度的LED封装器件及显示应用、封装工艺。
背景技术
发光二极管(LED，即Light Emitting Diode)具有体积小、使用寿命长、节能环保、响应速度快、坚固耐用等优点，是替代传统光源的理想光源。发光二极管现已广泛应用于汽车和室内照明、交通信号灯、屏幕显示和液晶背光等领域。封装工艺是LED制程中的一个非常重要的工艺，其对于LED的工作性能、成本等有着非常显著的影响。在显示领域，随着轻薄程度、清晰度、显示尺寸的要求不断提高，对显示装置背光模组的要求也不断提高，相应的，显示装置的价格也不断上涨。现有LED封装器件的发光角度在120°至130°的范围内，为了保证较佳的视觉效果，一台32寸的电视机需要使用2.6万LED灯珠，制造成本高昂，如果为了降低成本而减少LED灯珠数量，则会影响混光效果，造成视觉效果较差。此外，由于现有LED封装器件的出光角度较小，LED灯珠和扩散板之间的距离也无法进一步缩减，限制了显示装置的轻薄程度。
综上，本领域需要通过改进LED的封装工艺，制造一种发光角度大的LED封装器件，以提高显示装置的显示效果，降低生产成本，并减少厚度。
发明内容
有鉴于此，本发明的主要目的在于提供一种增大发光角度的LED封装器件，其封装工艺包括基板固晶、焊线工序，之后进行印刷或真空溅镀或 喷涂或第二次压膜，之后进行长烤、切割工艺形成LED封装器件，发光角度达到180°。
本发明的另一个目的在于提供一种增大发光角度的LED封装器件的显示应用，采用所述增大发光角度的LED封装器件。
为了达到上述目的，本发明提供一种增大出光角度的LED封装器件，封装工艺包括步骤：
(A)在基板上固晶和焊线；
(B)使用纯硅胶、硅树脂、环氧树脂按比例混合均匀，使用脱泡机脱泡后形成第一胶；
(C)在基板上采用第一胶进行压膜，形成胶层；
(D)在胶层表面上进行印刷或真空溅镀或喷涂或第二次压膜；
(E)长烤、切割形成LED器件。
优选地，所述步骤(B)中脱泡机的脱泡参数为500转30s/真空30kPa、800转1分50s/真空1.5kPa、600转50s/真空1.8kPa。
优选地，当所述步骤(D)采用印刷形式时包括步骤：
(D1)使用硅胶、硅树脂、环氧树脂添加1％∽90％TiO 2、SiO 2、Ag、铬粉等高反射、高遮光材料，混合均匀；
(D2)印刷于胶层上，形成印刷层。
优选地，印刷层的厚度为1μm∽200μm，单次10∽15μm进行多次印刷或一次印刷。
优选地，当所述步骤(D)采用真空溅镀形式时包括步骤：
(D1)使用无尘布清洁胶层表面；
(D2)喷环氧树脂油漆，厚度为15μm～28μm；
(D3)UV固化(烘烤)；
(D4)真空溅镀铝/银/铬，形成溅镀层；
(D5)喷环氧树脂油漆；
(D6)UV固化(烘烤)。
优选地，所述溅镀层厚度为2μm，真空溅镀时间40秒。
优选地，当所述步骤(D)采用喷涂形式时为：在胶层上进行喷涂，形成喷涂层，喷涂材料中硅胶/硅树脂/环氧树脂：甲苯＝1:10，把胶水稀释。
优选地，当所述步骤(D)采用第二次压膜形式时包括步骤：
(D1)在硅胶、硅树脂或环氧树脂内添加TiO 2、SiO 2，并将硅胶、硅树脂和环氧树脂按比例混合均匀，使用脱泡机脱泡后形成第二胶；
(D2)在胶层上采用第二胶进行压膜，形成第二胶层。
优选地，所述步骤(D1)中添加1％～60％TiO 2、SiO 2、Ag粉、铬、铝粉中的一种。
本发明还提供一种增大发光角度的LED封装器件的显示应用，其特征在于，采用所述增大发光角度的LED封装器件。
与现有技术相比，本发明公开的一种增大出光角度的LED封装器件及显示应用的优点在于：通过所述增大发光角度的LED封装工艺，制造的LED封装器件发光角度大，采用所述增大发光角度的LED封装器件的显示应用的显示效果好，生产成本低，且可以设计厚度更薄。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
如图1所示为本发明一种增大发光角度的LED封装器件的封装工艺的流程图。
如图2所示为本发明一种增大发光角度的LED封装器件的一种形式的截面示意图。
具体实施方式
如图1所示，本发明提供一种增大发光角度的LED封装器件的封装工艺，包括如下步骤：
(A)在基板上固晶和焊线；
(B)使用纯硅胶、硅树脂、环氧树脂按比例混合均匀，使用脱泡机 脱泡后形成第一胶；
(C)在基板上采用第一胶进行压膜，形成胶层；
(D)在胶层表面上进行印刷或真空溅镀或喷涂或第二次压膜；
(E)长烤、切割形成LED器件。这里的LED器件即是指LED封装器件。
其中，所述步骤(B)中脱泡机的脱泡参数为500转30s/真空30kPa、800转1分50s/真空1.5kPa、600转50s/真空1.8kPa，保证混合均匀。
所述步骤(C)压膜后放置5∽10min，保证胶层表面基本硬化。
所述步骤(C)中形成的胶层的厚度为0.3mm∽0.6mm。
所述步骤(C)压膜时间125℃/270秒固化成型，压膜后不长烤。
当所述步骤(D)采用印刷形式时包括步骤：
(D1)使用硅胶、硅树脂、环氧树脂添加1％∽90％TiO 2、SiO 2、Ag、铬粉等高反射、高遮光材料，混合均匀；
(D2)印刷于胶层上，形成印刷层。
其中，印刷层的厚度为1μm∽200μm，单次10∽15μm进行多次印刷或一次印刷。
当所述步骤(D)采用真空溅镀形式时包括步骤：
(D1)使用无尘布清洁胶层表面；
(D2)喷环氧树脂油漆，厚度为15μm～28μm；
(D3)UV固化(烘烤)；
(D4)真空溅镀铝/银/铬，形成溅镀层；
(D5)喷环氧树脂油漆；
(D6)UV固化(烘烤)。
其中，在喷环氧树脂油漆时会有杂点存在，规格一般在0.1-0.15μm。
其中，所述溅镀层厚度为2μm，真空溅镀时间40秒。
当所述步骤(D)采用喷涂形式时为：
在胶层上进行喷涂，形成喷涂层，喷涂材料中硅胶/硅树脂/环氧树脂：甲苯＝1:10，把胶水稀释。
其中，喷涂次数3∽5次，喷涂层厚度10μm左右
当所述步骤(D)采用第二次压膜形式时包括步骤：
(D1)在硅胶、硅树脂或环氧树脂内添加TiO 2、SiO 2，并将硅胶、硅树脂和环氧树脂按比例混合均匀，使用脱泡机脱泡后形成第二胶；
(D2)在胶层上采用第二胶进行压膜，形成第二胶层。
所述步骤(D1)中添加1％～60％TiO 2、SiO 2、Ag粉、铬、铝粉中的一种；
所述步骤(D1)中混合搅拌时间为3min。
所述步骤(D1)中脱泡机的脱泡参数为500转30s/真空30kPa、800转1分50s/真空1.5kPa、600转50s/真空1.8kPa，保证混合均匀。
所述步骤(D2)中形成的第二胶层的厚度为0.3mm。
所述步骤(D2)中压膜时间125℃/270秒固化成型。
添加TiO 2、SiO 2、Ag粉、铬、铝粉，是考虑其具有较佳的不透明性、较佳白度和光亮度，且遮盖性强，遮蔽LED正面出光，侧面发散，从而增大发光角度，达到180°出光。
所述步骤(E)中长烤参数为：100℃下1小时，并在150℃下3小时。
所述增大发光角度的LED封装器件如图2所示，包括基板10、胶层21和第二层22，所述基板10上固晶和焊线。所述第二层22的厚度根据所述步骤(D)所采取的方式不同而不同。胶层21厚度范围为0.3mm～0.8mm，第二层22厚度范围为2μm～0.3mm。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (19)

  1. 一种增大出光角度的LED封装器件，其特征在于，封装工艺包括步骤：
    (A)在基板上固晶和焊线；
    (B)使用纯硅胶、硅树脂、环氧树脂按比例混合均匀，使用脱泡机脱泡后形成第一胶；
    (C)在基板上采用第一胶进行压膜，形成胶层；
    (D)在胶层表面上进行印刷或真空溅镀或喷涂或第二次压膜；
    (E)长烤、切割形成LED器件。
  2. 如权利要求1所述的增大出光角度的LED封装器件，其特征在于，所述步骤(B)中脱泡机的脱泡参数为500转30s/真空30kPa、800转1分50s/真空1.5kPa、600转50s/真空1.8kPa。
  3. 如权利要求1所述的增大出光角度的LED封装器件，其特征在于，当所述步骤(D)采用印刷形式时包括步骤：
    (D1)使用硅胶、硅树脂、环氧树脂添加1％∽90％TiO 2、SiO 2、Ag、铝、铬粉，混合均匀；
    (D2)印刷于胶层上，形成印刷层。
  4. 如权利要求3所述的增大出光角度的LED封装器件，其特征在于，印刷层的厚度为1μm∽200μm，单次10∽15μm进行多次印刷或一次印刷。
  5. 如权利要求1所述的增大出光角度的LED封装器件，其特征在于，当所述步骤(D)采用真空溅镀形式时包括步骤：
    (D1)使用无尘布清洁胶层表面；
    (D2)喷环氧树脂油漆，厚度为15μm～28μm；
    (D3)UV固化(烘烤)；
    (D4)真空溅镀铝/银/铬，形成溅镀层；
    (D5)喷环氧树脂油漆；
    (D6)UV固化(烘烤)。
  6. 如权利要求5所述的增大出光角度的LED封装器件，其特征在于，所述溅镀层厚度为2μm，真空溅镀时间40秒。
  7. 如权利要求1所述的增大出光角度的LED封装器件，其特征在于，当所述步骤(D)采用喷涂形式时为：在胶层上进行喷涂，形成喷涂层，喷涂材料中硅胶/硅树脂/环氧树脂：甲苯＝1:10，把胶水稀释。
  8. 如权利要求1所述的增大出光角度的LED封装器件，其特征在于，当所述步骤(D)采用第二次压膜形式时包括步骤：
    (D1)在硅胶、硅树脂或环氧树脂内添加TiO 2、SiO 2，并将硅胶、硅树脂和环氧树脂按比例混合均匀，使用脱泡机脱泡后形成第二胶；
    (D2)在胶层上采用第二胶进行压膜，形成第二胶层。
  9. 如权利要求8所述的增大出光角度的LED封装器件，其特征在于，所述步骤(D1)中添加1％～60％TiO 2、SiO 2、Ag粉、铬、铝粉中的一种。
  10. 一种增大发光角度的LED封装器件的显示应用，其特征在于，采用如权利要求1所述的增大发光角度的LED封装器件。
  11. 一种增大出光角度的LED封装器件的封装工艺，其特征在于，封装工艺包括步骤：
    (A)在基板上固晶和焊线；
    (B)使用纯硅胶、硅树脂、环氧树脂按比例混合均匀，使用脱泡机脱泡后形成第一胶；
    (C)在基板上采用第一胶进行压膜，形成胶层；
    (D)在胶层表面上进行印刷或真空溅镀或喷涂或第二次压膜；
    (E)长烤、切割形成LED器件。
  12. 如权利要求11所述的增大出光角度的LED封装器件的封装工艺，其特征在于，所述步骤(B)中脱泡机的脱泡参数为500转30s/真空30kPa、800转1分50s/真空1.5kPa、600转50s/真空1.8kPa。
  13. 如权利要求11所述的增大出光角度的LED封装器件的封装工艺，其特征在于，当所述步骤(D)采用印刷形式时包括步骤：
    (D1)使用硅胶、硅树脂、环氧树脂添加1％∽90％TiO2、SiO2、Ag、铝、铬粉等高反射、高遮光材料，混合均匀；
    (D2)印刷于胶层上，形成印刷层。
  14. 如权利要求13所述的增大出光角度的LED封装器件的封装工艺，其特征在于，印刷层的厚度为1μm∽200μm，单次10∽15μm进行多次印 刷或一次印刷。
  15. 如权利要求11所述的增大出光角度的LED封装器件的封装工艺，其特征在于，当所述步骤(D)采用真空溅镀形式时包括步骤：
    (D1)使用无尘布清洁胶层表面；
    (D2)喷环氧树脂油漆，厚度为15μm～28μm；
    (D3)UV固化(烘烤)；
    (D4)真空溅镀铝/银/铬，形成溅镀层；
    (D5)喷环氧树脂油漆；
    (D6)UV固化(烘烤)。
  16. 如权利要求15所述的增大出光角度的LED封装器件的封装工艺，其特征在于，所述溅镀层厚度为2μm，真空溅镀时间40秒。
  17. 如权利要求11所述的增大出光角度的LED封装器件的封装工艺，其特征在于，当所述步骤(D)采用喷涂形式时为：在胶层上进行喷涂，形成喷涂层，喷涂材料中硅胶/硅树脂/环氧树脂：甲苯＝1:10，把胶水稀释。
  18. 如权利要求11所述的增大出光角度的LED封装器件的封装工艺，其特征在于，当所述步骤(D)采用第二次压膜形式时包括步骤：
    (D1)在硅胶、硅树脂或环氧树脂内添加TiO 2、SiO 2，并将硅胶、硅树脂和环氧树脂按比例混合均匀，使用脱泡机脱泡后形成第二胶；
    (D2)在胶层上采用第二胶进行压膜，形成第二胶层。
  19. 如权利要求18所述的增大出光角度的LED封装器件的封装工艺，其特征在于，所述步骤(D1)中添加1％～60％TiO 2、SiO 2、Ag粉、铬、铝粉中的一种。
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