WO2021140155A1 - Procédé de fabrication d'une cellule solaire à contact par la face arrière et cellule solaire à contact par la face arrière - Google Patents

Procédé de fabrication d'une cellule solaire à contact par la face arrière et cellule solaire à contact par la face arrière Download PDF

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Publication number
WO2021140155A1
WO2021140155A1 PCT/EP2021/050192 EP2021050192W WO2021140155A1 WO 2021140155 A1 WO2021140155 A1 WO 2021140155A1 EP 2021050192 W EP2021050192 W EP 2021050192W WO 2021140155 A1 WO2021140155 A1 WO 2021140155A1
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WO
WIPO (PCT)
Prior art keywords
contact fingers
areas
busbars
contact
polarity
Prior art date
Application number
PCT/EP2021/050192
Other languages
German (de)
English (en)
Inventor
Erik Hoffmann
Jürgen Werner
Original Assignee
EnBW Energie Baden-Württemberg AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EnBW Energie Baden-Württemberg AG filed Critical EnBW Energie Baden-Württemberg AG
Publication of WO2021140155A1 publication Critical patent/WO2021140155A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a method for producing a rear-side-contacted solar cell, as well as a rear-side-contacted solar cell.
  • Solar cells are known to serve as photovoltaic elements for converting light into electrical energy.
  • Charge carriers that are generated during the absorption of light in a semiconductor substrate are separated and conducted into areas of different polarity, for example at a pn junction between an emitter area, the one first doping type, for example n-type or p-type, (for generating a first polarity), and a base region, which has an opposite doping type (for generating an opposite polarity).
  • the charge carrier pairs generated and separated in this way can be fed to an external circuit via emitter contacts which contact the emitter region and base contacts which contact the base region.
  • Solar cells are known in which contacts of one polarity are arranged on the front side and contacts of the opposite polarity are arranged on the rear side.
  • rear contact solar cells have been developed in which both types of contact, i.e. the emitter contacts and the base contacts, are arranged on a rear side of the semiconductor substrate.
  • solar cells have been developed with comb-shaped, nested metal contacts (so-called.
  • IBC Infrared solar cells
  • the cells cannot only use a single positive and a single negative contact point or a negative and a positive contact point Contact line can be contacted, but a large number of contact fingers are necessary.
  • contact finger structures are used that intermesh like a comb: the positive or plus contact fingers are connected to one another via the back of a first comb, the negative or negative contact fingers are connected via the back of a second comb.
  • the "comb back” is usually referred to as "busbar” or "busbar”.
  • the contact fingers of the various busbars interlock, but are so far apart that they are electrically isolated from one another. In this way, it is possible to draw electrical energy from the To pull solar cells by contacting the busbars with electrical cables, for example.
  • the width of a PV cell is limited to approximately 2 cm if only two busbars are used if a thin and inexpensive metallization of the contact fingers is to be used.
  • the standard is currently 15.6 cm.
  • the current generated in such cells by solar radiation is then up to 10 A. Since the electrical current must be conducted via the contact fingers to the busbars with the lowest possible electrical resistance losses, the metallically conductive contact fingers must have a thickness in a range of several Micrometers to several tens of micrometers.
  • silver is used as the metal, sometimes aluminum or a layer that consists of several metals.
  • Such a thick metallization has several disadvantages: It is expensive and can lead to the solar cell bending due to temperature changes (e.g. when the cell cools down after the metal layer has been applied) if the applied metallic contact finger layers have a different coefficient of thermal expansion than the semiconductor material (mostly it is silicon). If only two busbars are used (one for the positive contact fingers and one for the negative contact fingers), the width of the cell is therefore limited.
  • the contact fingers should only be in contact with one busbar, which has the "correct" polarity, and must be insulated from the busbar or busbars with the other polarity.
  • an insulation layer can be applied locally to isolate the contact fingers from one another. This has to be done with great precision. If the contact fingers and the insulation layer are not applied exactly at the intended locations on the back of the substrate, then the PV cell is defective.
  • the present invention is concerned with the task of providing a cost-effective solar cell with a high degree of efficiency that can be controlled well in terms of production technology.
  • a semiconductor substrate which has a front side and a rear side.
  • the semiconductor substrate can be a silicon wafer.
  • the rear side of the semiconductor substrate is then divided into areas of negative polarity and areas of positive polarity. This can be done, for example, in that the semiconductor substrate is at least locally doped in the area of the rear side, thereby generating n-type doped areas (to form areas of negative polarity) and p-type doped areas (to form areas of positive polarity) become.
  • the subdivision can, however, also take place in the sense of a mere spatial assignment of areas in a substrate that is only basic doped, for example, with the positive
  • the polarity or the negative polarity then takes place in that, in the subsequent step, polarity-selective contact fingers are applied to the respective areas (see below).
  • the areas mentioned form, for example, emitter areas of the solar cell or a so-called back surface field.
  • the doping can take place, for example, by means of laser doping.
  • the subdivision into the areas takes place in such a way that areas of negative polarity (in particular n-type doped areas) and areas of positive polarity (in particular p-type doped areas) alternate.
  • the respective areas (positive polarity or negative polarity) preferably extend linearly and run next to one another, in particular parallel next to one another, each adjacent areas having opposite polarities.
  • the regions of positive polarity and the regions of negative polarity are preferably arranged and designed in such a way that regions of negative polarity and regions of positive polarity do not touch one another.
  • Metallic contact fingers are then produced, which electrically selectively contact the areas of different polarity.
  • the polarity of the metallic contact fingers alternates. Contact fingers of a "first polarity” change (first Contact finger) and contact finger of the opposite "second polarity” (second contact finger).
  • a plurality of first contact fingers should be electrically connected to a busbar of the first polarity (first busbars).
  • first busbars first busbars
  • second busbars second busbars
  • second contact fingers a large number of second contact fingers should be electrically connected to a second busbar.
  • second contact fingers should be isolated from the first busbars.
  • first and second contact fingers have local mesa elevations which protrude beyond the rear side of the substrate and the contact fingers in the areas without local mesa elevations (z-axis).
  • a mesa elevation is an increase in the surface in the manner of a table mountain structure.
  • the local mesa bumps are arranged on the contact fingers in such a way that they are located at the intersection and contacting points with a busbar of the respective (“correct”) polarity to be contacted.
  • the contact fingers are electrically connected to a busbar of the "correct” polarity via the local mesa bumps.
  • At the intersection of the contact fingers with a busbar of the other, non-contacting polarity (the "wrong” polarity) no local mesa bumps are formed, so that there is "space” for an insulation layer.
  • the insulation layer electrically insulates the contact fingers with the “second” polarity from the “first busbars” and the contact fingers with the “first” polarity from the “second busbars”.
  • the insulation layer is designed and arranged in particular in such a way that it electrically insulates sections of the contact fingers without local mesa elevations from the busbars of the opposite polarity.
  • first and second do not define a number or a sequence, but rather serve to distinguish the polarities of the contact fingers and the busbars.
  • first and second busbars are produced, which are electrically conductively connected to the contact fingers in the area of the local mesa elevations.
  • a busbar only contacts contact fingers of the same polarity. In particular, there is then no contact with the contact fingers of the respective other polarity, for example because the mesa elevations of the “wrong” contact fingers are not touched by the busbar under consideration.
  • the local mesa bumps are arranged on the contact fingers in such a way that they are located at the intersection and contacting points with a busbar of the "correct" polarity.
  • local mesa elevations of every second contact finger lie one behind the other along a (straight or curved) longitudinal extension of a busbar. In the area of the local mesa elevations, these contact fingers are electrically connected to the busbar.
  • busbars To electrically connect busbars to one another and thus collectively feed the charge carrier pairs discharged through the electrodes to an external circuit.
  • the contact fingers are designed in such a way that each contact finger is only connected to one busbar that connects other contact fingers of the same polarity.
  • the busbars preferably extend essentially transversely to the longitudinal direction of the contact fingers, in particular orthogonally to a longitudinal extension of the doped regions.
  • Deposition of the contact fingers (by printing, spraying, cathode atomization (sputtering), vapor deposition, electroless or galvanic deposition, etc.) followed by a second deposition of the local mesa elevations in the form of line pieces or point structures of any shape directly on the first layer of the contact fingers.
  • This sequence can also be reversed by first applying the local mesa elevations in the form of line pieces or point structures of any shape to the substrate and then applying the contact fingers the substrate and the local mesa bumps are applied.
  • contact fingers and local mesa elevations it is also possible to apply contact fingers and local mesa elevations to the substrate in one step.
  • the feed speed of the spray head is reduced in the area of the local mesa elevations and the contact fingers are increased in the remaining sections.
  • the delivery rate can be increased or decreased in such a way that locally higher contact fingers arise, e.g. in the form of local thickenings.
  • the electrically conductive local mesa bumps can be created using the same or a different method as the contact fingers. It is also possible to first apply the local mesa elevations to the substrate and then apply the contact fingers.
  • each contact finger There are different height levels along each contact finger. The height differences do not necessarily have to result from two, but can also result from a single or from more than two deposition steps.
  • the contact fingers can be locally structured by ablation in such a way that the mesa elevations that arise along the contact finger are further worked out. It is also possible that the “peaks” of the local elevations / mesa elevations are not flat in the shape of table mountains, but rather have one or more substantially dome-shaped or pointed “peaks”. The highest points of the local mesa elevations lie above the highest points of the sections of the contact fingers that are not provided with a local elevation / mesa elevation (ie they protrude above the surface).
  • the insulation layer is applied either over the entire surface or locally on the substrate in such a way that it covers the contact fingers and only the local mesa elevations protrude beyond the insulation layer.
  • the insulating layer can be produced, for example, by spraying an insulating varnish, inkjet printing, dipping in a varnish, printing, etc. with subsequent drying. Insulation varnishes that are used in the printed circuit board industry and are available on the market at low cost have proven to be suitable.
  • the thickness of the varnish at the high points of the local mesa elevations is less than in the "valleys" due to its viscosity.
  • An electrical connection between contact fingers and busbars e.g. by welding, soldering or printing
  • the insulation layer does not necessarily have to be designed over the whole area or coherently, but can can also only be applied locally in the form of "islands" of any shape where the busbars later have to be insulated. It is also conceivable, for example, that the insulation layer only applies to every second contact finger of the "wrong polarity" either locally or over its entire length is applied, for example, by printing, spraying, dipping.
  • the neighboring contact fingers of the "correct" polarity are made higher locally or over the entire length by table mountains, so that these contact fingers protrude beyond the insulation layer in order to be able to make electrical contact with the desired busbar in this way.
  • the insulation layer can also be produced by local or full-area deposition (eg printing) of a plastic material.
  • This plastic material can e.g. B. by mechanical pressure or heating into the "valleys" between the local mesa elevations and either exposing the local mesa elevations of the contact fingers or only covering them with a thin layer.
  • This thin layer is the electrical connection between contact fingers and busbars
  • the local mesa elevations do not have to have a straight line-like shape; they can have any shape (they can also be interrupted) as long as they are higher than the insulation layer on the contact fingers or the insulation layer on the contact fingers to be insulated is thicker than on the local mesa bumps.
  • the contact fingers are not designed in the form of continuous, metallic conductive lines, but rather as line pieces or as individual points or a collection of points.
  • the only decisive factor is that different local heights in combination with one or more insulation layers serve to connect the contacts of a certain polarity to the corresponding busbar and to isolate them electrically from the busbar of the other polarity.
  • both the contact fingers and the local mesa elevations are deposited on a previously structured base, which can also be the semiconductor layer itself, or else formed by removal (see also FIG. 6).
  • the busbars are made by deposition of a conductive Layer by printing, galvanic deposition, electroless deposition, sputtering, vapor deposition, etc. on the insulation layer but in an electrically conductive connection to the local mesa elevations of the contact fingers with the "correct" polarity.
  • the creation of the busbars includes, in particular, the application of the busbars and the electrical contacting of the busbars with the "correct" contact fingers.
  • electrical contact can be made in particular by materially connecting a respective busbar to the contact fingers assigned to it, for example by means of soldering and / or welding and / or bonding.
  • the busbars can be designed as conductive (metal) foil or (metal) wires, especially tinned copper wires, which are soldered, glued or welded or otherwise attached to the local mesa elevations of the contact fingers of the "correct" polarity that an electrically conductive connection is created.
  • the busbars are particularly preferably made of a metal foil (e.g. conventional aluminum foil for household use). This film is locally welded onto the "correct" local mesa elevations, for example with the aid of a laser.
  • multilayer metallizations are also possible, for example by placing the Busbars are applied again to local mesa bumps. Then an insulation layer is applied again and another level of contact fingers or busbars. In this way it can be achieved, for example, that a second level of busbars arises, which is rotated by 90 degrees compared to the first, but the second level of busbars only makes local contact with the respective "correct" busbars of the first level but with respect to the each "wrong" busbars is locally isolated.
  • FIG. 1 shows a schematic illustration of a rear-side-contacted solar cell with four pairs of busbars
  • FIG. 2 shows an enlarged detail from FIG. 1;
  • FIG. 3 shows an isometric view of contact fingers according to the invention before an insulation layer is applied;
  • FIG. 4 shows an isometric view of the rear side of the cell after the application of an insulation layer
  • FIG. 5 is an isometric view of the rear of the cell after the busbars have been attached.
  • FIG. 6 shows a further exemplary embodiment of a PV cell according to the invention.
  • a Cartesian coordinate system (x, y, z) is shown in the figures.
  • a plane spanned by the rear side of the semiconductor substrate 12 runs parallel to the x-y plane.
  • a surface normal of the rear side runs parallel to the z-axis.
  • FIG 1 shows a simplified representation of the back of a back-contacted solar cell 10, briefly as Solar cell 10 designated.
  • the solar cell 10 comprises a semiconductor substrate 12.
  • the semiconductor substrate 12 is designed in the form of a silicon wafer.
  • the semiconductor substrate 12 has regions of positive polarity (e.g., p-type doped regions) and regions of negative polarity (e.g., n-type doped regions). For reasons of clarity, these areas are not shown in the figures. In the figures, the various areas each extend linearly with respect to the exemplary coordinate system in the direction of the x-axis. The areas of different polarity alternate in the direction of the Y-axis. Assuming that the semiconductor substrate 12 has an n-type doping and forms the base of the solar cell 10, the regions of positive polarity (eg p-type doped regions) form the emitter regions and the other regions (eg the n-type doped regions) Regions) the back surface field 28. For example, the n-type doped regions are preferably more n-type doped than the semiconductor substrate 12 itself.
  • the PV cell 10 with a total of eight (8) busbars is shown in FIG. 1 in approximately its original size. There are two groups of contact fingers 14, 16 and two
  • the contact fingers 14 are above the areas of negative polarity (not shown) (e.g. n-type doped areas) of the substrate 12 arranged.
  • the contact fingers 16 are arranged above the regions of positive polarity (for example p-type doped regions) of the substrate 12, which are not shown.
  • FIG. 2 shows an enlarged section of the PV cell 10 with busbars.
  • the width of the contact fingers 14, 16 is shown enlarged for the sake of clarity, only a reduced number being shown. In fact, such a rear-side contact solar cell 10 can have several hundred contact fingers of both polarities. The number of eight bus bars (4 positive, 4 negative) can be realistic.
  • the contact fingers 14 and the busbars 20 are shown in a first line type (solid line).
  • the contact fingers 16 and the busbars 22 are shown in a second line type (broken line). This is intended to illustrate their different polarity.
  • the contact fingers 14 are electrically connected to the busbars 20 and are electrically isolated from the busbars 22.
  • the contact fingers 16 are electrically connected to the busbars 22 and are electrically isolated from the busbars 20.
  • FIG. 2 This situation is illustrated in FIG. 2 using the example of the busbar 22:
  • the arrows 30 point to electrically conductive connections between the busbar 22 and the contact fingers 16;
  • the arrows 32 point to the electrical insulation between the busbar 22 and the contact fingers 14.
  • the height of the contact fingers 14, 16 is increased locally at the points where the
  • a total of six contact fingers are shown in an isometric view; three first contact fingers 14 and three second contact fingers 16.
  • the height of the contact fingers 14, 16 extends in the direction of the z-axis.
  • a section from a contact finger 14 with a local mesa elevation 24 is shown.
  • the height ie the extension of the contact finger 14 in the direction of the z-axis
  • the local mesa elevation 24 is located where, in the finished cell 10, there is an electrically conductive connection between the contact finger 14 and the busbar 20 (not shown in FIG. 3).
  • a section from a contact finger 16 with a local mesa elevation 26 is shown.
  • the local mesa elevation 26 is offset in the direction of the x-axis relative to the mesa elevations 24 of the contact fingers 14
  • the finished cell 10 has an electrically conductive connection to the busbar 22 (not shown in FIG. 3).
  • local mesa elevations 24 and 26 are formed on the contact fingers 14, 16 from “III”, “IV”, “V” and “VI”.
  • the number of local mesa elevations 24, 26 on each individual contact finger 14, 16 can depend on the number of busbars. For example, a cell having four (4) positive and four (4) negative bus bars 20, 22 (i.e., four pairs of bus bars 20, 22) may have four (4) local mesa bumps 24 on each contact finger 14. Accordingly, there are four (4) local mesa bumps 26 on each contact finger 16.
  • the offset of the local mesa elevations 26 to the local mesa elevations 24 in the direction of the x-axis preferably corresponds to the distance between the busbars 20 and 22 (see FIGS. 1 and 2).
  • This relief-like structure is used to produce the electrically conductive connections between the contact fingers 14 and the busbars 20. In the same way, this relief-like structure is used to produce the electrically conductive connections between the contact fingers 16 and the busbars 22.
  • the production is largely "self-adjusting". This means that (production-related) deviations in the course of the contact fingers on the rear side of the substrate 12 from the desired course and / or deviations in the locations at which the local mesa elevations 24, 26 are applied do not lead to malfunctions of the PV Cell 10 lead because they are "automatically” compensated within relatively wide tolerance ranges. That simplifies the Production very strong and significantly reduces the scrap rate.
  • the contact fingers 14 and the busbars 22 as well as the contact fingers 16 and the busbars 20 are electrically insulated.
  • the insulation layer is applied to the rear side of the substrate 12. This can be done by spraying or rolling on a liquid lacquer or by dipping the substrate 12 into the lacquer.
  • the viscosity and cohesiveness of the lacquer, which later forms the insulation layer 28, can be adjusted in such a way that it completely or partially fills the “valleys” between the local mesa elevations 24, 26.
  • the lacquer is then dried and the insulation layer 28 shown in FIG. 4 is produced, from which the local mesa elevations 24 protrude.
  • FIG. 4 is an isometric illustration of a section of the rear side of the substrate 12. Therefore, the x and y axes in this illustration are not orthogonal to one another. I. E. the local mesa elevations 24 of the positive contact fingers 14 and the local mesa elevations 26 of the negative contact fingers 16 are only apparently shifted relative to one another in the direction of the x-axis. In fact, the contact fingers 14, 16 and the bus bars 20, 22 can be perpendicular to one another run (see Figures 1 and 2). However, the invention is not restricted to the fact that the busbars and the contact fingers necessarily extend at an angle of 90 °.
  • FIG. 5 shows how a busbar 20 electrically connects the local mesa elevations 24 of the positive contact fingers 14, which are arranged in a column, to one another via a type of "bridge structure". Elevations 26 of the negative contact fingers 16 electrically with one another via a type of "bridge structure".
  • the bridge structures are formed by the respective busbars 20, 22.
  • the actual contact fingers 14, 16 are not visible in FIGS. 4 and 5 because they are covered by the insulation layer 28. In this exemplary embodiment, the contact fingers 14, 16 run in the direction of the x-axis.
  • a busbar 20 electrically connects the local mesa elevations 24 with a plurality of contact fingers 14 of the same polarity (not visible under the insulation layer 28) 14.
  • the busbars 20, 22 can be directly on the The insulation layer 28 rest on or run at a distance from the insulation layer 28 in the direction of the z-axis.
  • the broken lines running in the direction of the X-axis illustrate the electrical connection between contact fingers or their local mesa elevations 24, 26 and the busbars 20, 22, which are produced, for example, by soldering or (laser) welding.
  • the demands on the manufacturing accuracy when positioning the contact fingers 14, 16, the local mesa elevations 24, 26 and the busbars 20, 22 are relatively low.
  • the relatively inexpensive materials such as the insulating varnish, the pastes for the contact fingers 14, 16 and the local mesa elevations 24, 26 and the material of the busbars 20, 22
  • either the substrate 12 itself or a layer on the substrate 12 is structured before or during the manufacture of the PV cell 10.
  • the structuring can take place, for example, by local etching or local laser ablation in such a way that depressions 34, 36, for example in the manner of a trench, are introduced.
  • the contact fingers 14, 16 are introduced into the depressions 34, 36; eg by screen printing, electroless deposition or other suitable processes.
  • the contact fingers 154, 16 essentially fill the depressions 34, 36 again.
  • the local mesa elevations 24, 26 are applied to the contact fingers 14, 16, so that a structure similar to that of a semi-relief in FIG. 3 results.
  • the insulation layer 28 and the busbars 20, 22 are then applied, as explained with reference to FIGS. 4 and 5.
  • the indentations can be made over the entire rear side of the PV cell 10 or only in the vicinity of the later busbars 20, 22 and / or at the later contact points.
  • the contact fingers 14, 16 with one another and the local mesa elevations 24, 26 with one another do not necessarily all have to have the same height (z-axis). It is sufficient that a local mesa elevation of the “correct” polarity to be contacted by a busbar is locally higher than the adjacent “wrong” contact fingers to be bridged. It is also conceivable that the contact fingers of only one polarity also lie in (local) depressions or elevations from the formation of mesa elevations.
  • contact finger lines and mesa elevations lie on more than two different, mutually isolated levels.
  • busbars and contact fingers do not necessarily have to form an angle of 90 °.
  • not all contact fingers or busbars have to be parallel run to each other. It only has to be ensured that busbars and "wrong"
  • Contact fingers are isolated from one another via at least one insulation layer and the busbars are electrically connected to the "correct" contact fingers via the local mesa elevations.

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Abstract

L'invention un procédé de fabrication d'une cellule solaire (10) à contact par la face arrière, deux groupes de doigts de contact (14, 16) se trouvant sur la face arrière d'un substrat semi-conducteur (12). Deux groupes de barres omnibus (20, 22) parallèles qui coupent les doigts de contact (14, 16) se trouvent sur la face arrière (16). Un premier groupe de doigts de contact (14) et un premier groupe de barres omnibus (20) sont interconnectés de manière électroconductrice aux points d'intersection. Un second groupe de doigts de contact (16) et un second groupe de barres omnibus (22) sont interconnectés de manière électroconductrice aux points d'intersection. Une couche isolante se trouve aux points d'intersection du premier groupe de doigts de contact (14) et du second groupe de barres omnibus (22). Il en est de même pour les points d'intersection du second groupe de doigts de contact (16) et du second groupe de barres omnibus (20). L'invention concerne en outre une cellule solaire à contact par la face arrière.
PCT/EP2021/050192 2020-01-09 2021-01-07 Procédé de fabrication d'une cellule solaire à contact par la face arrière et cellule solaire à contact par la face arrière WO2021140155A1 (fr)

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DE102020100354.4 2020-01-09
DE102020100354.4A DE102020100354A1 (de) 2020-01-09 2020-01-09 Verfahren zur Herstellung einer rückseitenkontaktierten Solarzelle und rückseitenkontaktierte Solarzelle

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WO2008080160A1 (fr) * 2006-12-22 2008-07-03 Advent Solar, Inc. Technologies d'interconnexion pour cellules et modules solaires à contact arrière
EP2009701A1 (fr) * 2006-03-01 2008-12-31 Sanyo Electric Co., Ltd. Pile de batteries solaires et module de batterie solaire l'utilisant
EP3279947A1 (fr) * 2015-03-31 2018-02-07 Kaneka Corporation Batterie solaire et module de batterie solaire
EP3503217A1 (fr) * 2016-08-22 2019-06-26 Kaneka Corporation Cellule solaire et module de cellule solaire

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KR102271055B1 (ko) * 2014-06-26 2021-07-01 엘지전자 주식회사 태양 전지 모듈
JP6307131B2 (ja) * 2015-09-08 2018-04-04 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール及びその製造方法

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Publication number Priority date Publication date Assignee Title
EP2009701A1 (fr) * 2006-03-01 2008-12-31 Sanyo Electric Co., Ltd. Pile de batteries solaires et module de batterie solaire l'utilisant
WO2008080160A1 (fr) * 2006-12-22 2008-07-03 Advent Solar, Inc. Technologies d'interconnexion pour cellules et modules solaires à contact arrière
EP3279947A1 (fr) * 2015-03-31 2018-02-07 Kaneka Corporation Batterie solaire et module de batterie solaire
EP3503217A1 (fr) * 2016-08-22 2019-06-26 Kaneka Corporation Cellule solaire et module de cellule solaire

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