WO2021135643A1 - 介质滤波器、无线电收发设备及具有其的基站 - Google Patents

介质滤波器、无线电收发设备及具有其的基站 Download PDF

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Publication number
WO2021135643A1
WO2021135643A1 PCT/CN2020/126975 CN2020126975W WO2021135643A1 WO 2021135643 A1 WO2021135643 A1 WO 2021135643A1 CN 2020126975 W CN2020126975 W CN 2020126975W WO 2021135643 A1 WO2021135643 A1 WO 2021135643A1
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Prior art keywords
dielectric
negative coupling
cavity
dielectric resonator
parallel
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PCT/CN2020/126975
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English (en)
French (fr)
Inventor
朱琦
周鑫童
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江苏灿勤科技股份有限公司
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Publication of WO2021135643A1 publication Critical patent/WO2021135643A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2002—Dielectric waveguide filters

Definitions

  • the present invention relates to the field of communication technology, in particular to a dielectric filter, a radio transceiver device and a base station having the same.
  • international patent application WO 2018148905A1 discloses a dielectric filter that realizes capacitive coupling between resonant cavities by arranging through holes and conductive isolation layers on a dielectric block.
  • the Chinese invention patent CN104604022B discloses a dielectric filter that realizes capacitive coupling between the resonators on both sides of the blind hole by punching a blind hole on the body made of solid dielectric material, but the international patent application WO
  • the negative coupling hole in 2018148905A1 is a through hole.
  • the depth of the negative coupling hole in the Chinese invention patent CN104604022B is at least twice the depth of the debugging hole.
  • the ceramic material shrinks or collapses when it is sintered at a high temperature, which greatly changes the shape and accuracy of the negative coupling hole, which affects the electrical performance of the dielectric filter, and the yield rate is low.
  • the purpose of the present invention is to overcome the shortcomings of the prior art and provide a dielectric filter, a radio transceiver and a base station having the same, avoid opening through holes or deep blind holes in the dielectric filter, and avoid high-temperature sintering of ceramic materials Shrinkage or collapse occurs at times, which makes the electrical performance stable and the yield rate is high.
  • the present invention provides a dielectric filter including at least two dielectric resonators, a first dielectric resonator and a second dielectric resonator, each dielectric resonator includes a dielectric resonator made of ceramic material A body and a debugging hole located on the upper surface of the dielectric resonator body and having a certain depth downward, the debugging hole is a blind hole, and the debugging hole is used to adjust the resonance frequency of the dielectric resonator where it is located;
  • Each of the dielectric resonators further includes a conductive layer covering the surface of the dielectric resonator body and the inner wall surface of the debugging hole;
  • One side surface of the first dielectric resonator is provided with a first negative coupling groove, and the groove bottom of the first negative coupling groove is not covered by the conductive layer, so that the groove bottom exposes the first dielectric resonator Ontology
  • One side surface of the second dielectric resonator is provided with a second negative coupling groove, and the groove bottom of the second negative coupling groove is not covered by the conductive layer, so that the groove bottom exposes the second dielectric resonator Ontology
  • the side surface of the first dielectric resonator where the first negative coupling groove is located is attached to the side surface where the second dielectric resonator where the second negative coupling groove is located, so that the first dielectric A resonator and the second dielectric resonator are connected as a whole, and all the dielectric resonators are connected as a whole to form the dielectric filter;
  • the slots of the first negative coupling groove and the second negative coupling groove are connected to each other, so that the first negative coupling groove and the second negative coupling groove are connected to form a negative coupling cavity, and the negative coupling cavity includes Two parallel cavities that are perpendicular to the upper surface of the first dielectric resonator body and are parallel to each other, the upper ends of the two parallel cavities are separated by the conductive layer, and the negative coupling cavity further includes the communication
  • the connecting cavity at the lower end of the two parallel cavities, the negative coupling cavity is used to realize the capacitive coupling between the first dielectric resonator and the second dielectric resonator.
  • the axis of the debugging hole of the first dielectric resonator and the axis of the debugging hole of the second dielectric resonator form a virtual plane, and the two parallel cavities are symmetrically distributed on the plane. On both sides.
  • the depth of the first negative coupling groove is greater than or equal to the thickness of the conductive layer and less than twice the thickness of the conductive layer
  • the depth of the second negative coupling groove is greater than or equal to the thickness of the conductive layer And less than twice the thickness of the conductive layer.
  • the connecting cavity is an arc-shaped cavity.
  • the connecting cavity is a linear cavity.
  • the connecting cavity is parallel to the upper surface of the first dielectric resonator.
  • the shape of the first negative coupling groove and the second negative coupling groove are completely the same.
  • the distance between the two parallel cavities is smaller than the diameter of the debugging hole.
  • the present invention also provides a second dielectric filter, including at least two dielectric resonators, each dielectric resonator includes a dielectric resonator body made of ceramic material, and the upper surface of the dielectric resonator body is opened There is a debugging hole, the debugging hole is a blind hole, and the debugging hole is used to adjust the resonance frequency of the dielectric resonator where it is located;
  • each dielectric resonator body is provided with a negative coupling groove on the side where the splicing is performed, and the two groove ends of the negative coupling groove are Are separated from each other, and each dielectric resonator body is covered with a conductive layer in the area outside the negative coupling groove;
  • the notches of the negative coupling grooves on the sides of the adjacent dielectric resonator bodies are opposed to each other, so that a negative coupling cavity is formed, and the negative coupling cavity is used to realize the capacitance between the two adjacent dielectric resonators. coupling.
  • the depths of the negative coupling grooves on adjacent dielectric resonators spliced to form an integrated structure are all greater than or equal to the thickness of the conductive layer, and the depth of the negative coupling grooves are all less than twice the thickness of the conductive layer.
  • the cavity diameter of the negative coupling cavity is less than a quarter of the depth of the debugging hole.
  • the negative coupling cavity includes two parallel cavities and a connecting cavity, the two parallel cavities are both perpendicular to the upper surface of the dielectric resonator body where it is located, and one end of the connecting cavity is connected to one of the parallel cavities.
  • the lower end is in communication, and the other end is in communication with the lower end of another parallel cavity.
  • the height of the bottom of the connecting cavity is lower than the height of the bottom of the debugging hole of the dielectric resonator where it is located.
  • the negative coupling cavity further includes auxiliary cavities corresponding to the parallel cavities one-to-one, one end of the auxiliary cavity is in communication with the corresponding parallel cavity, and the other end extends in a direction away from the other parallel cavity.
  • the conductive layer is arranged on the outer surface of the dielectric resonator body except the negative coupling groove and on the inner wall surface of the debugging hole.
  • the axis lines of the debugging holes on the two adjacent dielectric resonators that are spliced to form an integral structure form a virtual plane, and the negative coupling cavities are symmetrically distributed on both sides of the plane.
  • the connecting cavity is an arc-shaped cavity.
  • the connecting cavity is a linear cavity or a cavity formed by splicing linear cavities.
  • the connecting cavity is parallel to the upper surface of the first dielectric resonator body.
  • the connecting path of the connecting cavity has a widening structure with respect to the distance between the two parallel cavities.
  • the shape and size of the negative coupling grooves on adjacent dielectric resonators that are spliced to form an integral structure are the same.
  • the distance between the two parallel cavities is smaller than the diameter of the debugging hole on the dielectric resonator where they are located.
  • the technical solution adopted by the present invention further includes a radio transceiver device including the dielectric filter described in any one of the above.
  • the present invention has the following advantages compared with the prior art:
  • the dielectric filter provided by the present invention includes two or more dielectric resonators spliced to form an integrated structure.
  • a negative coupling groove is provided on the bonding surface of two adjacent dielectric resonators, and the body of the dielectric resonator
  • the surface and the inner wall surface of the debugging hole are covered with a conductive layer, and the negative coupling groove is not covered by the conductive layer, and a negative coupling cavity can be formed through two negative coupling grooves.
  • the negative coupling cavity includes two sections perpendicular to the medium.
  • the parallel cavity on the upper surface of the resonator body and parallel to each other and the connecting cavity connecting the lower ends of the two parallel cavities, and the upper ends of the two parallel cavities are disconnected (isolated), and the negative coupling cavity can be passed through Realize the capacitive coupling between two adjacent dielectric resonators, without the need to set through holes or deep blind holes, avoid the shrinkage or collapse of ceramic materials during high-temperature sintering, and make the electrical performance of the dielectric filter more stable.
  • the high rate also reduces the size of the dielectric filter.
  • FIG. 1 is a perspective schematic diagram of a dielectric filter in Embodiment 1 of the present invention.
  • Fig. 2 is a cross-sectional view of the dielectric filter in Fig. 1 in the direction of A-A;
  • Fig. 3 is a cross-sectional view of the dielectric filter in Fig. 1 in the direction B-B;
  • Fig. 4 is a cross-sectional view of the dielectric filter in Fig. 1 in the direction C-C;
  • FIG. 5 is a schematic top view of the dielectric filter in FIG. 1;
  • Fig. 6 is a cross-sectional view of the dielectric filter in Fig. 5 in the direction D-D;
  • Fig. 7 is a cross-sectional view of the dielectric filter in Fig. 5 in the direction E-E;
  • Fig. 8 is a cross-sectional view of the dielectric filter in Fig. 5 in the direction of F-F;
  • Embodiment 9 is a perspective schematic diagram of a dielectric filter in Embodiment 1 of the present invention.
  • Fig. 10 is a schematic front view of the dielectric filter in Fig. 9;
  • FIG. 11 is a perspective schematic diagram of a dielectric filter in Embodiment 3 of the present invention.
  • FIG. 12 is a schematic front view of the dielectric filter in FIG. 11;
  • FIG. 13 is a perspective schematic diagram of a dielectric filter in Embodiment 4 of the present invention.
  • FIG. 14 is a schematic front view of the dielectric filter in FIG. 13;
  • FIG. 15 is a perspective schematic diagram of a dielectric filter in Embodiment 5 of the present invention.
  • Fig. 16 is a schematic front view of the dielectric filter in Fig. 15;
  • FIG. 17 is a perspective schematic diagram of a dielectric filter in Embodiment 6 of the present invention.
  • FIG. 18 is a schematic front view of the dielectric filter in FIG. 17;
  • FIG. 19 is a perspective schematic diagram of a dielectric filter in Embodiment 7 of the present invention.
  • FIG. 20 is a schematic front view of the dielectric filter in FIG. 19;
  • FIG. 21 is a perspective schematic diagram of a dielectric filter in Embodiment 8 of the present invention.
  • FIG. 22 is a schematic front view of the dielectric filter in FIG. 21;
  • FIG. 23 is a perspective schematic diagram of a dielectric filter in Embodiment 9 of the present invention.
  • FIG. 24 is a schematic front view of the dielectric filter in FIG. 23;
  • Fig. 25 is an electrical performance diagram of the dielectric filter in Example 1 of the present invention.
  • the reference signs include: 100-dielectric filter, 200-first dielectric resonator, 201-first dielectric resonator body, 202-first debugging hole, 203-first conductive layer, 204-first negative coupling Slot, 300-second dielectric resonator, 301-second dielectric resonator body, 302-second debugging hole, 303-second conductive layer, 304-second negative coupling groove, 400-negative coupling cavity, 401-parallel Cavity, 402-connection cavity, 403-auxiliary cavity.
  • the dielectric filter 100 provided by the embodiment of the present invention includes two or more dielectric resonators spliced together to form an integrated structure.
  • the following two dielectric resonators are taken as an example, each of which is the first dielectric resonator 6 and 7, it can be seen that the first dielectric resonator 200 and the second dielectric resonator 300 have the same or substantially the same structure:
  • the first dielectric resonator 200 includes a ceramic material
  • the first dielectric resonator body 201 and the aperture are located on the first debugging hole 202 on the upper surface of the first dielectric resonator body 201, the first debugging hole 202 is a blind hole, and the first debugging hole 202 is used for debugging the first dielectric resonator 200
  • the first dielectric resonator 200 also includes a first conductive layer 203 covering the surface of the first dielectric resonator body 201 and the inner wall surface of the first debugging hole 202; the second dielectric
  • the right side of the first dielectric resonator 200 is provided with a first negative coupling groove 204, and the groove bottom and/or groove wall of the first negative coupling groove 204 are not covered by the first conductive layer 203, so that the first negative coupling groove 204
  • the groove bottom and/or groove wall expose the first dielectric resonator body 201;
  • the left side of the second dielectric resonator 300 is provided with a second negative coupling groove 304, and the groove bottom and/or groove wall of the second negative coupling groove 304 It is not covered by the second conductive layer 303 so that the bottom and/or the wall of the second negative coupling groove 304 expose the second dielectric resonator body 301.
  • each dielectric resonator 200/300 except for the groove bottom and/or groove wall of the negative coupling groove 204/304, the surface of the dielectric resonator body 201/301 and the debugging hole 202/302 are Both are covered with a conductive layer 203/303.
  • the inner wall surface of the first debugging hole 202 and the inner wall surface of the second debugging hole 302 are also covered with a conductive layer.
  • the area outside the first negative coupling groove 204 on the first dielectric resonator 200 includes the outside surface of the first negative coupling groove 204 on the first dielectric resonator body 201 and the inner wall of the first debugging hole 202
  • the surface; the area outside the second negative coupling groove 304 on the second dielectric resonator 300 includes the outside surface of the first negative coupling groove 204 covering the second dielectric resonator body 301, and the inner wall of the second debugging hole 302 surface.
  • the right side of the first dielectric resonator 200 is attached to the left side of the second dielectric resonator 300, so that the first dielectric resonator 200 and the second dielectric resonator 300 are connected as one body, and all the dielectric resonators are connected as one body.
  • Dielectric filter 100 Dielectric filter 100.
  • the first negative coupling groove 204 and the corresponding second negative coupling groove 304 preferably have the same or substantially the same shape and size (as shown in FIGS. 7 and 8).
  • the negative coupling cavity 400 includes two parallel cavities 401 perpendicular to the upper surface of the first dielectric resonator body 201 and parallel to each other.
  • the distance between the two parallel cavities 401 is smaller than the first debugging hole 202/the second debugging hole 302
  • AA corresponds to the height range of the parallel cavity 401
  • BB in Figure 1 corresponds to the height range of the connecting cavity 402 of the horizontal part that is connected to the lower end of the parallel cavity 401
  • CC corresponds to the horizontal part of the bottom of the connecting cavity 402 Height range; the upper ends of the two parallel cavities 401 are not connected (separated by the first conductive layer 203 and the second conductive layer 303), the negative coupling cavity 400 also includes a connection for connecting the lower ends of the two parallel cavities 401
  • the connecting cavity 402, that is, one end of the connecting cavity 402 is connected to the lower end of one of the parallel cavities 401, and the other end is connected to the lower end of the other parallel cavity 401.
  • the connecting cavity 402 is a linear cavity.
  • the figure formed by the connecting cavity 402 is an unclosed mouth shape, the length of the bottom side of the connecting cavity 402 is greater than the diameter of the first debugging hole 202/the second debugging hole 302, and the negative coupling cavity 400 is used to realize the first The capacitive coupling between the dielectric resonator 200 and the second dielectric resonator 300.
  • the axis of the first debugging hole 202 and the axis of the second debugging hole 302 are parallel and form a virtual plane.
  • the two parallel cavities 401 (or negative coupling cavities 400) are symmetrically distributed on both sides of the plane. .
  • the size and shape of the first negative coupling groove 204 and the second negative coupling groove 304 are exactly the same, that is, the depth of the first negative coupling groove 204 is the same as the depth of the second negative coupling groove 304, and the width of the first negative coupling groove 204 is the same as that of the first negative coupling groove 304.
  • the widths of the two negative coupling grooves 304 are the same.
  • the thickness of the first conductive layer 203 and the thickness of the second conductive layer 303 are both the same.
  • the dielectric filter of the embodiment of the present invention does not need to be provided with a negative coupling cavity of the through hole or deep blind hole type.
  • the depth of the secondary coupling cavity 400 is preferably greater than or equal to the thickness of the conductive layer, and the depth of the negative coupling groove Both are less than twice the thickness of the conductive layer, and the cavity diameter of the negative coupling cavity 400 is less than a quarter of the depth of the debugging hole.
  • the bottom height of the connecting cavity 402 is lower than the bottom height of the debugging hole (first debugging hole 202/second debugging hole 302) of the dielectric resonator where it is located.
  • the shape of the negative coupling cavity 400 (including the parallel cavity 401 and the connecting cavity 402) is determined by the shape of the first negative coupling groove 204 and the second negative coupling groove 304, such as the two grooves of the first negative coupling groove 204 The two ends of the second negative coupling groove 304 are separated from each other. Therefore, the negative coupling cavity 400 is a non-closed cavity.
  • the shape enclosed by the connecting cavity 402 is The differences from Embodiment 1 are explained separately.
  • Embodiment 2 is basically the same as embodiment 1, except that the length of the bottom side of the connecting cavity 402 of the dielectric filter 100 in the embodiment 2 is smaller than the diameter of the first debugging hole 202/the second debugging hole 302 (not shown) And the bottom height of the connecting cavity 402 is lower than the bottom height of the debugging hole (first debugging hole 202/second debugging hole 302) of the dielectric resonator where it is located.
  • the same content as the embodiment 1 is introduced into this embodiment 2 by reference.
  • Embodiment 3 is basically the same as embodiment 1, except that the figure formed by the connecting cavity 402 of the dielectric filter 100 in Embodiment 3 is an arc shape, and the figure formed by the connecting cavity 402 constitutes an ellipse with a gap.
  • the long axis is horizontal, and the length of the long axis is greater than the diameter of the first debugging hole 202/the second debugging hole 302, as shown in FIGS. 11-12, and the bottom height of the connecting cavity 402 is lower than where it is located.
  • the height of the bottom of the debugging hole (first debugging hole 202/second debugging hole 302) of the dielectric resonator The same content as the embodiment 1 is introduced into this embodiment 3 by reference.
  • Embodiment 4 is basically the same as embodiment 3, except that the horizontal width of the pattern formed by the connecting cavity 402 of the dielectric filter 100 in the embodiment 4 is smaller than the diameter of the first debugging hole 202/the second debugging hole 302, for example, As shown in FIGS. 13 and 14, the connecting cavity 402 constitutes a circle with a notch on the upper part. The diameter of the circle (the horizontal width of the figure formed above) is smaller than the diameter of the first debugging hole 202/the second debugging hole 302, and The bottom height of the connecting cavity 402 is lower than the bottom height of the debugging hole (first debugging hole 202/second debugging hole 302) of the dielectric resonator where it is located. The same content as the embodiment 3 is introduced into this embodiment 4 by reference.
  • Embodiment 5 is basically the same as embodiment 1, except that the connecting cavity 402 of the dielectric filter 100 in embodiment 5 forms the waist and bottom of the trapezoid, and the length of the bottom of the connecting cavity 402 is greater than that of the two parallel cavities.
  • the width between 401 is preferably greater than the diameter of the first debugging hole 202/the second debugging hole 302, as shown in FIG. 15 and FIG. 16, and the bottom height of the connecting cavity 402 is lower than the resonance of the medium in which it is located.
  • the height of the bottom of the debugging hole (first debugging hole 202/second debugging hole 302) of the controller The same content as in Example 1 is introduced in Example 5 by reference.
  • Embodiment 6 is basically the same as embodiment 1, but the difference is that the upper ends of the two parallel cavities 401 of the dielectric filter 100 in embodiment 6 are also connected with auxiliary cavities 403 respectively.
  • the auxiliary cavities 403 extend outward (away from the other The parallel cavity) extends in the direction (preferably perpendicular to the direction of the parallel cavity 401), as shown in Figures 17 and 18, the distance between the outer ends of the two auxiliary cavities 403 is preferably greater than the first debugging hole 202/second
  • the diameter of the debugging hole 302 is smaller than the length of the bottom side of the connecting cavity 402, and the bottom height of the connecting cavity 402 is lower than the debugging hole (first debugging hole 202/second debugging hole) of the dielectric resonator where it is located. 302) The height of the bottom.
  • the same content as the embodiment 1 is introduced into this embodiment 6 by reference.
  • Embodiment 7 is basically the same as embodiment 4, the difference is that the upper end of the two parallel cavities 401 of the dielectric filter 100 in embodiment 7 is also connected with an auxiliary cavity 403, and the auxiliary cavity 403 extends outward (away from the other parallel cavity).
  • the cavity) extends in the direction (preferably perpendicular to the direction parallel to the cavity 401), as shown in Figs. 19 and 20, the distance between the outer ends of the two auxiliary cavities 403 is preferably greater than the first debugging hole 202/second debugging The diameter of the hole 302, and the bottom height of the connecting cavity 402 is lower than the bottom height of the debugging hole (first debugging hole 202/second debugging hole 302) of the dielectric resonator where it is located.
  • the same content as in Example 4 is introduced in Example 7 by reference.
  • Embodiment 8 is basically the same as Embodiment 1, except that the connecting cavity 402 of the dielectric filter 100 in Embodiment 8 is a linear cavity, and the connecting cavity 402 is parallel to the upper surface of the first dielectric resonator body 201. So that the entire negative coupling cavity 400 is in a right-angled U shape, as shown in FIGS.
  • the inner distance between the two parallel cavities 401 is preferably smaller than the diameter of the first debugging hole 202/the second debugging hole 302, and the outer distance is equal to
  • the length of the connecting cavity 402 is preferably greater than the diameter of the first debugging hole 202/the second debugging hole 302, and the bottom height of the connecting cavity 402 is lower than the debugging hole (first debugging hole) of the dielectric resonator where it is located. 202/The height of the bottom of the second debugging hole 302).
  • the same content as in Example 1 is introduced in Example 8 by reference.
  • Embodiment 9 is basically the same as embodiment 8, but the difference is that the upper ends of the two parallel cavities 401 of the dielectric filter 100 in the embodiment 9 are also connected with auxiliary cavities 403, and the auxiliary cavities 403 extend outward (away from the other The parallel cavity) extends in the direction (preferably perpendicular to the direction of the parallel cavity 401), as shown in Figs.
  • the inner spacing of the two parallel cavities 401 is preferably smaller than that of the first debugging hole 202/second debugging hole 302
  • the diameter, the outer distance and the length of the connecting cavity 402 are preferably larger than the diameter of the first debugging hole 202/the second debugging hole 302, and the bottom height of the connecting cavity 402 is lower than the debugging of the dielectric resonator where it is located.
  • the dielectric filter 100 in which three or more dielectric resonators are spliced to form an integrated structure is a simple modification or structure superposition, which also falls within the protection scope of the present invention.
  • embodiment 5 can be combined with the auxiliary cavity 403 in other embodiments to obtain a new embodiment, and so on. Examples of other combinations will not be repeated.
  • the dielectric filter 100 of all the above embodiments of the present invention generates a transmission zero point A at the low end of the filter passband B through a negative coupling cavity 400; by adjusting the enclosing area of the connecting cavity 402 and the two parallel cavities
  • the distance between 401 and the length of the two parallel cavities 401 are used to adjust the strength of transmission zero point A; the larger the area enclosed by the connection cavity 402, the stronger the transmission zero point A; the smaller the groove width at the bottom of the connection cavity 402, the greater the transmission zero point A Weak; the longer the length of the two parallel cavities 401, the stronger the transmission zero point A.
  • the dielectric filter provided by the embodiment of the present invention includes two or more dielectric resonators spliced to form an integrated structure.
  • a negative coupling groove is provided on the bonding surface of two adjacent dielectric resonators, and the dielectric resonator
  • the surface of the body and the inner wall surface of the debugging hole are covered with a conductive layer, and the negative coupling groove is not covered by the conductive layer, and the negative coupling cavity can be formed through the two negative coupling grooves.
  • the negative coupling cavity includes two vertical sections.
  • the parallel cavities parallel to each other on the upper surface of the dielectric resonator body and the connecting cavity connecting the lower ends of the two parallel cavities, and the upper ends of the two parallel cavities are not connected (separated by the conductive layer), and can pass
  • the negative coupling cavity realizes the capacitive coupling between two adjacent dielectric resonators, without the need to set through holes or deep blind holes, avoids the shrinkage or collapse of ceramic materials during high-temperature sintering, and improves the electrical performance of the dielectric filter. It is more stable, has a high yield, and reduces the size of the dielectric filter.
  • An embodiment of the present invention also provides a radio transceiver device.
  • the radio transceiver device includes any one of the dielectric filters in the foregoing embodiments, and the dielectric filter in the radio transceiver device can be used to filter radio frequency signals.
  • the embodiment of the present invention also provides a base station, including the radio transceiver equipment in the above-mentioned embodiment.

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Abstract

本发明公开了介质滤波器、无线电收发设备及具有其的基站，介质滤波器由相邻介质谐振器拼接形成一体结构，通过在相邻介质谐振器的贴合面上开设负耦合槽，并在介质谐振器的本体表面和调试孔内壁表面覆盖导电层，并使负耦合槽不被所述导电层覆盖，且两个负耦合槽槽口相对接形成负耦合腔，通过使负耦合腔包括两段垂直于介质谐振器本体的上表面并且相互平行的平行腔和连通所述两段平行腔下端部的连接腔，并使这两段平行腔上端部之间被导电层隔断，能够通过该负耦合腔实现两个相邻的介质谐振器之间的电容耦合，无需设置通孔或深盲孔，避免了陶瓷材料在高温烧结时发生的收缩或坍塌现象，使介质滤波器的电气性能更加稳定，还降低了介质滤波器的尺寸。

Description

介质滤波器、无线电收发设备及具有其的基站
优先权声明
本申请要求于2019年12月31日提交中国专利局、申请号为201911404589.0的中国专利申请的优先权，以及要求于2020年03月02日提交中国专利局、申请号为202010134458.1、发明名称为“介质滤波器、无线电收发设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及通信技术领域，具体涉及介质滤波器、无线电收发设备及具有其的基站。
背景技术
随着5G通信“大爆炸”时代的来临，电子通信设备逐渐在世界范围内进行普及，而滤波器正是电子通信设备中重要的一环，决定着电子基站的辐射范围和信号强度等关键因素。
传统滤波器存在着体积大，损耗高，介电常数低等缺陷，无法满足5G通信的需求。由此，介质波导滤波器应运而生，它在相同的谐振频率下，介质材料的介电常数更高，体积更小。随着基站性能的不断提高，对滤波器的性能要求也越来越高，传统的介质波导滤波器多采用电感耦合的方式，难以满足对滤波器频段近端的抑制等特定电气性能要求，为解决这一问题，市场上出现了采用电容耦合的介质滤波器，如国际专利申请WO 2018148905A1就公开了一种通过在介质块上设置通孔和导电隔断层实现谐振腔之间电容耦合的介质滤波器，如中国发明专利CN104604022B就公开了一种通过在由固态介电材料制成的本体上打盲孔的方式实现盲孔两侧谐振器之间电容耦合的介质滤波器，但国际专利申请WO 2018148905A1中的负耦合孔是通孔，中国发明专利CN104604022B中的负耦合孔的孔深至少是调试孔孔深的两倍，由于上述两种技术方案中的负耦合孔的深度均较大，在陶瓷材料高温烧结的时候会产生收缩或坍塌，使得负 耦合孔的形状和精度发生较大改变，影响介质滤波器的电气性能，良品率低。
发明内容
本发明的目的是为了克服现有技术的缺点，提供一种介质滤波器、无线电收发设备及具有其的基站，避免在介质滤波器上开设通孔或深盲孔，进而避免在陶瓷材料高温烧结时发生收缩或坍塌，使得电气性能稳定，良品率高。
为达到上述目的，本发明采用的技术方案如下：
一方面，本发明提供了一种介质滤波器，包括至少两个介质谐振器，分别为第一介质谐振器和第二介质谐振器，每个介质谐振器包括由陶瓷材料制成的介质谐振器本体和位于所述介质谐振器本体上表面并向下具有一定深度的调试孔，所述调试孔为盲孔，所述调试孔用于调试其所在的介质谐振器谐振频率；
每个所述介质谐振器还包括覆盖在所述介质谐振器本体表面和所述调试孔内壁表面的导电层；
所述第一介质谐振器的一侧表面设有第一负耦合槽，所述第一负耦合槽的槽底未被所述导电层覆盖，使得该槽底暴露出所述第一介质谐振器本体；
所述第二介质谐振器的一侧表面设有第二负耦合槽，所述第二负耦合槽的槽底未被所述导电层覆盖，使得该槽底暴露出所述第二介质谐振器本体；
所述第一负耦合槽所在的所述第一介质谐振器的侧表面与所述第二负耦合槽所在的所述第二介质谐振器所在的侧表面相贴合，使所述第一介质谐振器和所述第二介质谐振器连接为一体，所有所述介质谐振器连接为一体构成所述介质滤波器；
所述第一负耦合槽和所述第二负耦合槽的槽口相对接，使得所述第一负耦合槽和所述第二负耦合槽相连通形成负耦合腔，所述负耦合腔包括两段分别垂直于所述第一介质谐振器本体的上表面并且相互平行的平行腔，所述两段平行腔上端部之间被所述导电层隔断，所述负耦合腔还包括连通所述两段平行腔下端部的连接腔，所述负耦合腔用于实现所述第一介质谐振器和所述第二介质谐振器之间的电容耦合。
优选地，所述第一介质谐振器的调试孔的轴心线和所述第二介质谐振器的调试孔的轴心线形成一个虚拟的平面，所述两段平行腔对称分布于该平面的两 侧。
优选地，所述第一负耦合槽的深度大于或等于所述导电层的厚度且小于所述导电层厚度的两倍，所述第二负耦合槽的深度大于或等于所述导电层的厚度且小于所述导电层厚度的两倍。
优选地，所述连接腔为圆弧形的腔体。
优选地，所述连接腔为直线形的腔体。
进一步优选地，所述连接腔平行于所述第一介质谐振器的上表面。
优选地，所述第一负耦合槽和所述第二负耦合槽形状完全相同。
优选地，所述两段平行腔之间的距离小于所述调试孔的直径。
另一方面，本发明还提供了第二种介质滤波器，包括至少两个介质谐振器，每个介质谐振器包括由陶瓷材料制成的介质谐振器本体，所述介质谐振器本体上表面开设有调试孔，所述调试孔为盲孔，所述调试孔用于调试其所在的介质谐振器谐振频率；
所述至少两个介质谐振器通过介质谐振器本体的侧面拼接形成一体结构，每个介质谐振器本体在进行拼接的侧面上均设有负耦合槽，所述负耦合槽的两个槽端之间被隔断，每个介质谐振器本体在所述负耦合槽以外的区域覆设有导电层；
相邻的介质谐振器本体在进行拼接的侧面上的负耦合槽的槽口相对接，使得形成负耦合腔，所述负耦合腔用于实现所述相邻两个介质谐振器之间的电容耦合。
进一步地，拼接形成一体结构的相邻介质谐振器上的负耦合槽的深度均大于或等于所述导电层的厚度，且所述负耦合槽的深度均小于所述导电层厚度的两倍。
进一步地，所述负耦合腔的腔径小于所述调试孔深度的四分之一。
进一步地，所述负耦合腔包括两个平行腔和一个连接腔，所述两个平行腔均垂直于其所在的介质谐振器本体的上表面，所述连接腔的一端与其中一个平行腔的下端连通，另一端与另一个平行腔的下端连通。
进一步地，所述连接腔的底部高度低于其所在的介质谐振器的调试孔的底部高度。
可选地，所述负耦合腔还包括与所述平行腔一一对应的辅助腔，所述辅助腔的一端与对应的平行腔连通，另一端向远离另一个平行腔的方向延伸。
进一步地，所述导电层设置在所述介质谐振器本体上除所述负耦合槽以外的外表面上及所述调试孔的内壁表面上。
进一步地，拼接形成一体结构的相邻两个介质谐振器上的调试孔的轴心线形成一个虚拟的平面，所述负耦合腔对称分布于该平面的两侧。
可选地，所述连接腔为圆弧形的腔体。
可选地，所述连接腔为直线形的腔体或直线形腔体拼接的腔体。
可选地，所述连接腔平行于所述第一介质谐振器本体的上表面。
优选地，所述连接腔的连接路径相对于两个平行腔之间的间距呈变宽结构。
进一步地，拼接形成一体结构的相邻介质谐振器上的负耦合槽形状和尺寸相同。
进一步地，所述两个平行腔之间的距离小于其所在的介质谐振器上的调试孔的直径。
为达到上述目的，本发明采用的技术方案还包括，一种无线电收发设备，包括上述任意一项所述的介质滤波器。
由于上述技术方案的运用，本发明与现有技术相比具有下列优点：
本发明提供的介质滤波器包括拼接形成一体结构的两个或三个以上的介质谐振器，通过在两个相邻介质谐振器的贴合面上开设负耦合槽，并在介质谐振器的本体表面和调试孔内壁表面覆盖导电层，并使负耦合槽不被所述导电层覆盖，能够通过两个负耦合槽槽口相对接形成负耦合腔，通过使负耦合腔包括两段垂直于介质谐振器本体的上表面并且相互平行的平行腔和连通所述两段平行腔下端部的连接腔，并使这两段平行腔上端部之间不连通(被隔断)，能够通过该负耦合腔实现两个相邻的介质谐振器之间的电容耦合，无需设置通孔或深盲孔，避免了陶瓷材料在高温烧结时发生的收缩或坍塌现象，使介质滤波器的电气性能更加稳定，良品率高，还降低了介质滤波器的尺寸。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施 例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例1中介质滤波器的立体透视示意图；
图2为图1中介质滤波器在A-A方向的剖视图；
图3为图1中介质滤波器在B-B方向的剖视图；
图4为图1中介质滤波器在C-C方向的剖视图；
图5为图1中介质滤波器的俯视示意图；
图6为图5中介质滤波器在D-D方向的剖视图；
图7为图5中介质滤波器在E-E方向的剖视图；
图8为图5中介质滤波器在F-F方向的剖视图；
图9为本发明实施例1中介质滤波器的立体透视示意图；
图10为图9中介质滤波器的主视示意图；
图11为本发明实施例3中介质滤波器的立体透视示意图；
图12为图11中介质滤波器的主视示意图；
图13为本发明实施例4中介质滤波器的立体透视示意图；
图14为图13中介质滤波器的主视示意图；
图15为本发明实施例5中介质滤波器的立体透视示意图；
图16为图15中介质滤波器的主视示意图；
图17为本发明实施例6中介质滤波器的立体透视示意图；
图18为图17中介质滤波器的主视示意图；
图19为本发明实施例7中介质滤波器的立体透视示意图；
图20为图19中介质滤波器的主视示意图；
图21为本发明实施例8中介质滤波器的立体透视示意图；
图22为图21中介质滤波器的主视示意图；
图23为本发明实施例9中介质滤波器的立体透视示意图；
图24为图23中介质滤波器的主视示意图；
图25为本发明实施例1中介质滤波器的电气性能图。
其中，附图标记包括：100-介质滤波器，200-第一介质谐振器，201-第一介 质谐振器本体，202-第一调试孔，203-第一导电层，204-第一负耦合槽，300-第二介质谐振器，301-第二介质谐振器本体，302-第二调试孔，303-第二导电层，304-第二负耦合槽，400-负耦合腔，401-平行腔，402-连接腔，403-辅助腔。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行详细的描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要说明的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图1所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
实施例1
如图1-10所示，本发明实施例提供的介质滤波器100，包括两个或三个以上介质谐振器拼接形成一体结构，下面以两个介质谐振器为例，分别为第一介质谐振器200和第二介质谐振器300，参见图6和图7可知，第一介质谐振器200和第二介质谐振器300结构相同或大致相同：第一介质谐振器200包括由陶瓷材料制成的第一介质谐振器本体201和孔口位于第一介质谐振器本体201上表面的第一调试孔202，第一调试孔202为盲孔，第一调试孔202用于调试第一介质谐振器200的谐振频率，第一介质谐振器200还包括覆盖在第一介质谐振器本体201表面和第一调试孔202内壁表面的第一导电层203；第二介质谐振器 300包括由陶瓷材料制成的第二介质谐振器本体301和孔口位于第二介质谐振器本体301上表面的第二调试孔302，第二调试孔302为盲孔，第二调试孔302用于调试第二介质谐振器300的谐振频率，第二介质谐振器300还包括覆盖在第二介质谐振器本体301表面和第二调试孔302内壁表面的第二导电层303。
第一介质谐振器200的右侧面设有第一负耦合槽204，第一负耦合槽204的槽底和/或槽壁未被第一导电层203覆盖，使得第一负耦合槽204的槽底和/或槽壁暴露出第一介质谐振器本体201；第二介质谐振器300的左侧面设有第二负耦合槽304，第二负耦合槽304的槽底和/或槽壁未被第二导电层303覆盖，使得第二负耦合槽304的槽底和/或槽壁暴露出第二介质谐振器本体301。
本实施例中，每个介质谐振器200/300中，除了负耦合槽204/304的槽底和/或槽壁之外，其中的介质谐振器本体201/301和调试孔202/302的表面都覆盖有导电层203/303。
所述第一调试孔202的内壁表面和第二调试孔302的内壁表面也覆设有导电层。具体地，所述第一介质谐振器200上第一负耦合槽204的以外区域，包括第一介质谐振器本体201上第一负耦合槽204的以外的表面，以及第一调试孔202的内壁表面；第二介质谐振器300上第二负耦合槽304的以外的区域包括覆盖在第二介质谐振器本体301上的第一负耦合槽204的以外的表面，以及第二调试孔302的内壁表面。
第一介质谐振器200的右侧面与第二介质谐振器300的左侧面相贴合，使第一介质谐振器200和第二介质谐振器300连接为一体，所有介质谐振器连接为一体构成介质滤波器100。
在第一介质谐振器200的右侧面与第二介质谐振器300的左侧面相贴合时，第一负耦合槽204和第二负耦合槽304的槽口相对接，使得第一负耦合槽204和第二负耦合槽304相连通形成负耦合腔400。所述第一负耦合槽204与对应的第二负耦合槽304优选形状和尺寸均相同或大致相同(如图7和图8所示)。负耦合腔400包括两段分别垂直于第一介质谐振器本体201的上表面并且相互平行的平行腔401，这两段平行腔401之间的距离小于第一调试孔202/第二调试孔302的直径，如图2所示，A-A对应平行腔401高度范围，图1中B-B对应与平行腔401下端相接的水平状部分的连接腔402高度范围，C-C对应连接腔 402底部水平状部分的高度范围；这两段平行腔401的上端部之间不连通(被第一导电层203和第二导电层303隔断)，负耦合腔400还包括用于连通这两段平行腔401下端部的连接腔402，即所述连接腔402的一端与其中一个平行腔401的下端连通，另一端与另一个平行腔401的下端连通，在本实施例中，所述连接腔402为直线形腔体拼接的腔体，连接腔402形成的图形呈不封闭的口字型，连接腔402的底边长度大于第一调试孔202/第二调试孔302的直径，负耦合腔400用于实现第一介质谐振器200和第二介质谐振器300之间的电容耦合。
第一调试孔202的轴心线和第二调试孔302的轴心线相平行，并形成一个虚拟的平面，上述两段平行腔401(或负耦合腔400)对称分布于该平面的两侧。
第一负耦合槽204和第二负耦合槽304的大小和形状完全相同，即第一负耦合槽204的深度与第二负耦合槽304的深度相同，第一负耦合槽204的宽度与第二负耦合槽304的宽度相同，另外，本实施例中，所述第一导电层203的厚度与第二导电层303的厚度均相等。本发明实施例的介质滤波器无需设置通孔或深盲孔型的负耦合腔，所述副耦合腔400的深度优选为大于或等于所述导电层的厚度，且所述负耦合槽的深度均小于所述导电层厚度的两倍，所述负耦合腔400的腔径小于所述调试孔深度的四分之一。如图8所示，所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302)的底部高度。
显而易见地，负耦合腔400(包括平行腔401和连接腔402)的形状是由第一负耦合槽204和第二负耦合槽304的形状决定的，比如第一负耦合槽204的两个槽端之间被隔断，所述第二负耦合槽304的两个槽端之间被隔断，因此，负耦合腔400为非闭合的腔体，在下面各个实施例中针对连接腔402包围的形状与本实施例1之间的差异分别作出说明。
实施例2
实施例2与实施例1基本相同，不同之处在于，实施例2中介质滤波器100的连接腔402的底边长度小于第一调试孔202/第二调试孔302的直径(未图示)，且所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302)的底部高度。与实施例1相同的内容通过引用引入本实施例2。
实施例3
实施例3与实施例1基本相同，不同之处在于，实施例3中介质滤波器100的连接腔402构成的图形为圆弧形，连接腔402构成的图形构成一具有缺口的椭圆，椭圆的长轴为水平状态，且该长轴的长度大于第一调试孔202/第二调试孔302的直径，如图11-图12所示，且所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302)的底部高度。与实施例1相同的内容通过引用引入本实施例3。
实施例4
实施例4与实施例3基本相同，不同之处在于，实施例4中介质滤波器100的连接腔402构成的图形的水平宽度小于第一调试孔202/第二调试孔302的直径，比如如图13和图14所示，所述连接腔402构成上部具有缺口的圆，该圆的直径(上述构成的图形的水平宽度)小于第一调试孔202/第二调试孔302的直径，且所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302)的底部高度。与实施例3相同的内容通过引用引入本实施例4。
实施例5
实施例5与实施例1基本相同，不同之处在于，实施例5中介质滤波器100的连接腔402构成梯形的腰边和底边，所述连接腔402的底边长度大于两个平行腔401之间的宽度，优选还大于所述第一调试孔202/第二调试孔302的直径，如图15和图16所示，且所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302)的底部高度。与实施例1相同的内容通过引用引入本实施例5。
实施例6
实施例6与实施例1基本相同，不同之处在于，实施例6中介质滤波器100的两段平行腔401的上端部还分别连接有辅助腔403，辅助腔403沿向外(远离另一个平行腔)的方向(优选垂直于平行腔401的方向)延伸，如图17和图18所示，两个辅助腔403的外端之间的距离优选大于所述第一调试孔202/第二调试孔302的直径，且小于所述连接腔402的底边的长度，且所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302) 的底部高度。与实施例1相同的内容通过引用引入本实施例6。
实施例7
实施例7与实施例4基本相同，不同之处在于，实施例7中介质滤波器100的两段平行腔401的上端部还连接有辅助腔403，辅助腔403沿向外(远离另一个平行腔)的方向(优选垂直于平行腔401的方向)延伸，如图19和图20所示，两个辅助腔403的外端之间的距离优选大于所述第一调试孔202/第二调试孔302的直径，且所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302)的底部高度。与实施例4相同的内容通过引用引入本实施例7。
实施例8
实施例8与实施例1基本相同，不同之处在于，实施例8中介质滤波器100的连接腔402为直线形的腔体，连接腔402平行于第一介质谐振器本体201的上表面，使得整个负耦合腔400呈直角U字形，如图21和图22所示，两段平行腔401的内侧间距优选小于所述第一调试孔202/第二调试孔302的直径，其外侧距离及所述连接腔402的长度优选大于所述第一调试孔202/第二调试孔302的直径，且所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302)的底部高度。与实施例1相同的内容通过引用引入本实施例8。
实施例9
实施例9与实施例8基本相同，不同之处在于，实施例9中介质滤波器100的两段平行腔401的上端部还分别连接有辅助腔403，辅助腔403沿向外(远离另一个平行腔)的方向(优选垂直于平行腔401的方向)延伸，如图23和图24所示，两段平行腔401的内侧间距优选小于所述第一调试孔202/第二调试孔302的直径，其外侧距离及所述连接腔402的长度优选大于所述第一调试孔202/第二调试孔302的直径，且所述连接腔402的底部高度低于其所在的介质谐振器的调试孔(第一调试孔202/第二调试孔302)的底部高度。与实施例8相同的内容通过引用引入本实施例9。
根据上述实施例，三个以上介质谐振器拼接形成一体结构的介质滤波器100为简单变型或结构叠加，同样落入本发明要求的保护范围。
以上实施例的部分技术方案可以结合得到新的实施例，比如实施例5结合其他实施例中的辅助腔403，就可以得到新的实施例，等等，其他结合方式的举例不再赘述。
如图25所示，本发明以上全部实施例的介质滤波器100通过负耦合腔400产生在滤波器通带B的低端产生传输零点A；通过调整连接腔402的包围面积和两段平行腔401之间的距离及两段平行腔401的长度来调节传输零点A的强度；连接腔402包围的面积越大，传输零点A越强；连接腔402底部的槽宽越小，传输零点A越弱；两段平行腔401的长度越长，传输零点A越强。
本发明实施例提供的介质滤波器包括拼接形成一体结构的两个或三个以上的介质谐振器，通过在两个相邻介质谐振器的贴合面上开设负耦合槽，并在介质谐振器的本体表面和调试孔内壁表面覆盖导电层，并使负耦合槽不被所述导电层覆盖，能够通过两个负耦合槽槽口相对接形成负耦合腔，通过使负耦合腔包括两段垂直于介质谐振器本体的上表面并且相互平行的平行腔和连通所述两段平行腔下端部的连接腔，并使这两段平行腔上端部之间不连通(被导电层隔断)，能够通过该负耦合腔实现两个相邻的介质谐振器之间的电容耦合，无需设置通孔或深盲孔，避免了陶瓷材料在高温烧结时发生的收缩或坍塌现象，使介质滤波器的电气性能更加稳定，良品率高，还降低了介质滤波器的尺寸。
本发明实施例还提供一种无线电收发设备，该无线电收发设备包括上述实施例中任意一种介质滤波器，该无线电收发设备中的介质滤波器可以用于对射频信号进行滤波。
本发明实施例还提供了一种基站，包括上述实施例中的无线电收发设备。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (17)

  1. 介质滤波器，其特征在于，包括至少两个介质谐振器，分别为第一介质谐振器和第二介质谐振器，每个介质谐振器包括由陶瓷材料制成的介质谐振器本体和孔口位于所述介质谐振器本体上表面的调试孔，所述调试孔为盲孔，所述调试孔用于调试其所在的介质谐振器谐振频率；
    每个所述介质谐振器还包括覆盖在所述介质谐振器本体表面和所述调试孔内壁表面的导电层；
    所述第一介质谐振器的一侧表面设有第一负耦合槽，所述第一负耦合槽的槽底未被所述导电层覆盖，使得该槽底暴露出所述第一介质谐振器本体；
    所述第二介质谐振器的一侧表面设有第二负耦合槽，所述第二负耦合槽的槽底未被所述导电层覆盖，使得该槽底暴露出所述第二介质谐振器本体；
    所述第一负耦合槽所在的所述第一介质谐振器的侧表面与所述第二负耦合槽所在的所述第二介质谐振器所在的侧表面相贴合，使所述第一介质谐振器和所述第二介质谐振器拼接形成一体结构，所有所述介质谐振器连接为一体构成所述介质滤波器；
    所述第一负耦合槽和所述第二负耦合槽的槽口相对接，使得所述第一负耦合槽和所述第二负耦合槽相连通形成负耦合腔，所述负耦合腔包括两段分别垂直于所述第一介质谐振器本体的上表面并且相互平行的平行腔，所述两段平行腔上端部之间被所述导电层隔断，所述负耦合腔还包括连通所述两段平行腔下端部的连接腔，所述负耦合腔用于实现所述第一介质谐振器和所述第二介质谐振器之间的电容耦合。
  2. 一种介质滤波器，其特征在于，包括至少两个介质谐振器，每个介质谐振器包括由陶瓷材料制成的介质谐振器本体和孔口位于所述介质谐振器本体上表面的调试孔，所述调试孔为盲孔，所述调试孔用于调试其所在的介质谐振器谐振频率；
    所述至少两个介质谐振器通过介质谐振器本体的侧面拼接形成一体结构，每个介质谐振器本体在进行拼接的侧面上均设有负耦合槽，所述负耦合槽的两个槽 端之间被隔断，每个介质谐振器本体在所述负耦合槽以外的区域覆设有导电层；
    相邻的介质谐振器本体在进行拼接的侧面上的负耦合槽的槽口相对接，使得形成负耦合腔(400)，所述负耦合腔(400)用于实现所述相邻两个介质谐振器之间的电容耦合。
  3. 根据权利要求1或2所述的介质滤波器，其特征在于，拼接形成一体结构的相邻介质谐振器上的负耦合槽的深度均大于或等于所述导电层的厚度，且所述负耦合槽的深度均小于所述导电层厚度的两倍。
  4. 根据权利要求2所述的介质滤波器，其特征在于，所述负耦合腔(400)的腔径小于所述调试孔深度的四分之一。
  5. 根据权利要求2所述的介质滤波器，其特征在于，所述负耦合腔(400)包括两个平行腔(401)和一个连接腔(402)，所述两个平行腔(401)均垂直于其所在的介质谐振器本体的上表面，所述连接腔(402)的一端与其中一个平行腔(401)的下端连通，另一端与另一个平行腔(401)的下端连通。
  6. 根据权利要求5所述的介质滤波器，其特征在于，所述连接腔(402)的底部高度低于其所在的介质谐振器的调试孔的底部高度。
  7. 根据权利要求5所述的介质滤波器，其特征在于，所述负耦合腔(400)还包括与所述平行腔(401)一一对应的辅助腔(403)，所述辅助腔(403)的一端与对应的平行腔(401)连通，另一端向远离另一个平行腔(401)的方向延伸。
  8. 根据权利要求2所述的介质滤波器，其特征在于，所述导电层设置在所述介质谐振器本体上除所述负耦合槽以外的外表面上及所述调试孔的内壁表面上。
  9. 根据权利要求1或2所述的介质滤波器，其特征在于，拼接形成一体结构的相邻两个介质谐振器上的调试孔的轴心线形成一个虚拟的平面，所述负耦合腔 (400)对称分布于该平面的两侧。
  10. 根据权利要求1或5所述的介质滤波器，其特征在于，所述连接腔(402)为圆弧形的腔体。
  11. 根据权利要求1或5所述的介质滤波器，其特征在于，所述连接腔(402)为直线形的腔体或直线形腔体拼接的腔体。
  12. 根据权利要求1或5所述的介质滤波器，其特征在于，所述连接腔(402)平行于所述第一介质谐振器本体的上表面。
  13. 根据权利要求1或5所述的介质滤波器，其特征在于，所述连接腔(402)的连接路径相对于两个平行腔(401)之间的间距呈变宽结构。
  14. 根据权利要求1或2所述的介质滤波器，其特征在于，拼接形成一体结构的相邻介质谐振器上的负耦合槽形状和尺寸相同。
  15. 根据权利要求1或5所述的介质滤波器，其特征在于，所述两个平行腔(401)之间的距离小于其所在的介质谐振器上的调试孔的直径。
  16. 无线电收发设备，其特征在于，包括如权利要求1至15中任意一项所述的介质滤波器。
  17. 一种基站，其特征在于，包括如权利要求16所述的无线电收发设备。
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